Combination structure of E suction cup and aluminum base structure

Abstract

The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to an embodiment, a bonding layer is formed between a dielectric body including an electrostatic chuck and a temperature control base. A flow orifice extends through the dielectric body and is aligned with a flow orifice in the temperature control base. The bonding layer is also configured with openings aligned with the holes in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow orifice to protect the bonding layer. In another aspect, a seal is disposed within the flow orifice to seal the bonding layer from the gas in the flow orifice.

Description

[0001] This application is a divisional application of the invention patent application with the application date of September 28, 2018, application number "201811139451.8", and invention name "Combination structure of E suction cup and aluminum base structure". Technical Field

[0002] Embodiments of the present disclosure generally relate to bonding layers for electrostatic chucks. Background Art

[0003] Electrostatic chucks are used in various manufacturing and processing operations. In semiconductor manufacturing, electrostatic chucks are often used to support substrates within a process chamber. Semiconductor manufacturing exposes the substrate support, which includes the electrostatic chuck, to the process chamber environment and to a temperature range between the ambient temperature and the substrate processing temperature. To maintain the substrate temperature at a desired set point, the electrostatic chuck, formed of ceramic, is coupled to a temperature-controlled base. A conductive bonding material between the ceramic chuck portion and the temperature-controlled base connects the two bodies.

[0004] The substrate support, including the bonding material exposed at the interface between the electrostatic chuck and the cooling base and at any backside gas passages extending therethrough, is exposed to process gases and process reaction byproducts of the manufacturing process. Some of these gases and byproducts can degrade the bonding material when they come into contact with it. This can also cause inconsistencies in the bonding material during its manufacture and formation. These variations in adhesion strength and material properties can cause the bonding material to delaminate with the electrostatic chuck and temperature control base or locally alter heat transfer through the bonding material, resulting in temperature variations across the holding surface of the electrostatic chuck. Additionally, the electrostatic chuck and temperature control base can have different coefficients of thermal expansion. When the temperature of the substrate support increases (such as during process operation), or when the dielectric body and temperature control base have different temperatures, stresses in the bonding material increase due to the different thermal expansion of the electrostatic chuck and temperature control base. This increase in stress can cause localized delamination of the bonding material when the localized stress exceeds the bonding strength of the bonding material. Summary of the Invention

[0005] The present disclosure generally relates to a bonding layer for securing a ceramic body to a metal body. A flow hole extends through the body. A plug and a seal are optionally disposed within the flow hole to protect the bonding layer. In certain embodiments, the bonding layer may include two layers to form a stepped bonding profile. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order that the manner in which the above-described features of the present disclosure are understood in detail, a more particular description of the present disclosure, briefly summarized above, may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. It will be noted, however, that the accompanying drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope of the present disclosure, as the disclosure may admit to other equally effective embodiments.

[0007] Figure 1 is a schematic cross-sectional view of an exemplary substrate support.

[0008] Figures 2A-2B is a schematic cross-sectional view of a bonding structure that secures an electrostatic chuck and a temperature control member together according to one embodiment.

[0009] Figure 3 is a schematic cross-sectional view of a bonding structure that secures an electrostatic chuck and a temperature control member together according to one embodiment.

[0010] Figure 4 is a schematic cross-sectional view of a bonding structure that secures an electrostatic chuck and a temperature control member together according to one embodiment.

[0011] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without recitation with respect to those other embodiments. DETAILED DESCRIPTION

[0012] The present disclosure is a method for bonding an electrostatic chuck to a temperature control base. According to an embodiment, a bonding layer is formed between a dielectric body including the electrostatic chuck and the temperature control base. A flow hole extends through the dielectric body and is aligned with the flow hole in the temperature control base. The bonding layer is configured with an opening that is aligned with the hole in the dielectric body and the temperature control base. In one aspect, a porous plug can be positioned within the flow hole to protect the bonding layer from gas present in the flow hole. In another aspect, a seal is positioned within the flow hole to seal the bonding layer from gas present in the flow hole.

[0013] Figure 1FIG1 is a schematic cross-sectional view of an exemplary substrate support for use in a processing chamber. The substrate support 100 includes a dielectric body 102 and a temperature control base 104, with the dielectric body 102 forming an electrostatic chuck. The dielectric body comprises a ceramic material, such as alumina or aluminum nitride. The temperature control base 104 comprises a metal, such as aluminum. The temperature control base 104 is secured to a cylindrical support (not shown) that extends through a wall of the processing chamber to support the substrate support 100 thereon. Alternatively, the temperature control base may be secured to a base within the chamber. The substrate support 100 may generally have a circular shape, but other shapes capable of supporting a substrate, such as a rectangular or oval shape, may also be utilized. A bonding layer 106 is disposed between a lower surface of the dielectric body 102 facing the temperature control base 104 and an upper surface of the temperature control base 104 facing the dielectric body 102, opposite the cylindrical support. A substrate W is removably disposed on the upper surface of the dielectric body 102 opposite the bonding layer 106. The bonding layer 106 secures and thermally couples the dielectric body 102 to the temperature control base 104 .

[0014] An electrode 108 is disposed within the dielectric body 102. The electrode 108 is connected to a power source (not shown) that applies a voltage to the electrode to form an electromagnetic field at the interface between the upper surface of the dielectric body 102 and the substrate W. The electromagnetic field interacts with the substrate W to chuck the substrate W to the surface of the dielectric body 102. The electrode can be biased to provide a monopolar or bipolar chuck.

[0015] Channels 110 provided within the temperature control base 104 circulate fluid through the temperature control base 104. Fluid (typically a liquid such as a A fluid (e.g., a liquid) flows through the channel 110 and returns to the temperature control unit. In some processes, the fluid is used to cool the temperature control base 104 to reduce the temperature of the dielectric body 102 and the substrate W placed thereon. Conversely, the fluid can be used to increase the temperature of the temperature control base 104 to heat the dielectric body 102 and the substrate W thereon. In other embodiments, a resistive heater (not shown) can be disposed within the temperature control base. In some cases, heat from the resistive heater, combined with heat transfer from the temperature control base 104 to the fluid, is used to maintain the dielectric body 102 or substrate W at a set point temperature.

[0016] The flow hole 112 is provided in the substrate support 100. Figure 1As shown, flow holes 112 are formed to extend through the dielectric body 102, the bonding layer 106, and the temperature control base 104. In this configuration, the gas introduced through the flow holes 112 is present in the area between the side of the substrate W facing the dielectric body 102 and the facing surface of the dielectric body 102. The gas is maintained at a pressure sufficient to allow the gas to serve as a heat conduction path between the substrate W and the dielectric body 102. A gas source (not shown) is coupled to the flow holes 112. During processing, a gas, such as helium, flows from the gas source and is delivered to the lower surface of the substrate W (the surface not exposed to the processing area of ​​the chamber) through the flow holes 112. Some gases are known to degrade the bonding layer 106 exposed to the gas at the flow holes 112.

[0017] Figure 2A and Figure 2B FIG is a schematic cross-sectional view of the dielectric body 102, the temperature control base 104 and the intermediate bonding layer 106. Figures 2A-2B In the embodiment, the substrate support 100 includes Figure 1 The dielectric body 102 and the temperature control base 104 are similar to those of FIG. Here, the bonding layer 106 comprises two partial layers 106a, 106b. Figures 2A-2B In some embodiments, the bonding layers 106a, 106b comprise sheets of bonding material. The bonding layers 106a, 106b comprise organic materials such as silicone, acrylic, perfluoropolymer, or combinations thereof, although other materials are contemplated. In certain embodiments, the bonding layer 306 additionally comprises an inorganic material (e.g., aluminum oxide, aluminum nitride, or silicon carbide) to improve specific properties of the bonding layer 306, such as thermal conductivity. The bonding layer 106a is disposed on the surface 208 of the dielectric body 102. The bonding layer 106b is disposed on the facing surface 210 of the temperature control base 104. The bonding layers 106a, 106b are disposed on the facing surface 210 of the temperature control base 104. The bonding layers 106a, 106b are disposed on the facing surface 210 of the temperature control base 104 to form the complete bonding layer 106 ( Figure 2B ) are respectively adhered to the dielectric body 102 and the temperature control base 104 ( Figure 2A ), which improves the bonding properties of the bonding material and increases the uniformity of the thickness of the bonding material. The final bonding layer 106 is formed by the curing process. The bonding layer 106 can have a thickness in the range of about 100 microns to 800 microns, but can be thicker or thinner when necessary to achieve the desired material properties, bonding strength and heat transfer properties between the dielectric body 102 and the temperature control base 104. Although Figures 2A-2B A sheet of bonding material is used in the embodiment of the present invention, but it will be understood that any method capable of forming a bonding layer may be used, such as casting, applying a paste, spraying, or molding the bonding material onto the surfaces of the respective dielectric body 102 and the temperature control base 104. In addition, a different number of layers may be used to form the bonding layer 106.

[0018] The flow hole 112 extends through the substrate support 100. For ease of description, Figures 2A-2B , but it will be understood that multiple holes may be utilized. The flow hole 112 is formed through the dielectric body 102, the bonding layer 106, and the temperature control base 104. The portion of the flow hole 112 disposed within the temperature control base 104 includes two portions. A first portion extends inwardly from a surface 210 facing the dielectric body 102 toward the center of the body of the temperature control base 104. Extending partially through the first portion of the temperature control base 104 is a counterbore forming a cylindrical recess 212. A second portion extends from the recess 212 through the remainder of the temperature control base 104 and has a circular cross-section. The first portion and the second portion each have a diameter, wherein the diameter of the second portion is smaller than the diameter of the first portion, as shown. Figures 2A-2B As shown. The bonding layer 106 is disposed adjacent to the surface 210 of the temperature control base 104. An opening is formed through each of the bonding layers 106a, 106b, and the opening is aligned with the center of the groove 212, thereby forming a hole through each bonding layer 106a, 106b. The opening 214 of the bonding layer 106b has a diameter that is equal to or greater than the diameter of the groove 212. The opening 216 of the bonding layer 106a has a diameter that is smaller than the opening 214. In some embodiments, the opening 216 can have a diameter that is substantially equal to the diameter of the groove 212. When the bonding layers 106a, 106b are as shown Figure 2B When combined as shown, the openings 214, 216 through the bonding layer 106 create a "stepped bond."

[0019] Holes 218 are formed within the dielectric body 102 , and they are configured to align with the grooves 212 and the openings 214 , 216 to partially define the flow bore 112 . Figures 2A-2B 102 , two vanes are shown, which define three passages in conjunction with adjacent dielectric body 102 sidewalls, but embodiments herein may be practiced with any suitable number of vanes. A plug 220 is optionally disposed within dielectric body 102, aligned with flow aperture 112. Plug 220 is formed from a porous material, such as a ceramic, which may be alumina or zirconia. Plug 220 has a porosity, such as a porosity range between 10% and 80%, that allows gas from recess 212 to pass through openings 214, 216 to the passages between vanes 218 and into fluid communication with the region between substrate W and dielectric body 102 when supported on dielectric body 102. Plug 220 further prevents particles, ionized particles, or ionized gas from the processing region from passing through the passages between vanes 218 and into the gas volume defined by openings 214, 216 when substrate W is not supported on dielectric body 102.

[0020] Figures 2A-2BThe stepped bonding shown in FIG advantageously improves the uniformity of the bond layer by forming two partial layers and then a complete bond layer. By improving the uniformity of the bond material, the bond material's resistance to degradation due to exposure to process gases is increased. Additionally, adhesion is consistent across the bond layer between the dielectric body and the temperature control base, which prevents localized delamination caused by stresses resulting from thermal expansion of one or both of the temperature control base and the dielectric body.

[0021] Figure 3 Shows something like Figure 1 and Figures 2A-2B Schematic cross section of such a substrate support 100 . Figure 3 The substrate support 100 contains Figure 1-2B Identical components share the same reference numerals and will not be discussed again for the sake of brevity. A bonding layer 306 is provided between the dielectric body 102 and the temperature control base 104 to secure the dielectric body 102 and the temperature control base 104 together. Figure 3 In some embodiments, a single sheet of bonding material is used. However, it should be understood that there are other methods of applying the bonding material, such as casting, applying a paste, spraying or molding, or using multiple layers of sheets. The bonding layer 306 includes an organic material, such as silicone, acrylic, perfluoropolymer, or a combination thereof, but other materials capable of forming a bond have also been conceived. In certain embodiments, the bonding layer 306 additionally includes an inorganic material (e.g., aluminum oxide, aluminum nitride, or silicon carbide) to improve specific properties of the bonding layer 306, such as thermal conductivity. An annular opening 302 is formed through the bonding layer 306 and is configured to align with the cylindrical groove 212 and the vane 218, which, in conjunction with the annular opening 302, partially define the flow hole 112. Similarly, Figure 3 A single flow hole 112 is shown in FIG, but any suitable number of holes may be utilized. The diameter of the opening 302 is smaller than the diameter of the cylindrical recess 212 so that a shoulder is formed by applying the edge of the bonding layer 306 to the recess 212. The shoulder and opening 302 act as a choke for the airflow to the vane 218 or plug 220 optionally disposed therein. The opening 302 also has a diameter smaller than the diameter of the plug 220 so that the bonding layer 306 extends below the plug 220, as shown in FIG. Figure 3 Here, the plug 220 also serves to prevent particles, ionized particles of material, or ionized gases from the process environment from reaching the bonding material when the substrate W is not present on the dielectric body 102. By extending the bonding layer 306 over the groove 212, the surface area of ​​the temperature control base 104 exposed to the corrosive process gas is reduced, which significantly reduces corrosion of the metal temperature control base 104.

[0022] Figure 4 Shows something like Figure 1-3 1 and 2. The substrate support 100 is similar to that of FIG. 1 , and like parts share like reference numerals. For the sake of brevity, descriptions of like parts will again be omitted here. A bonding layer 406 is disposed between the dielectric body 102 and the temperature control base 104 and secures them together. A single flow hole 112 is shown as being disposed in the substrate support 100, but any applicable number may be utilized. An annular opening 414 is formed through the bonding layer 406 to partially define the flow hole 112. The opening 414 has a diameter that is substantially larger than the cylindrical recess 212. A seal 404 (such as an O-ring) is optionally disposed in the enlarged diameter of the opening 414. The seal 404 is used to seal the bonding layer 406 to isolate it from the gas flowing in the flow hole 112. The seal 404 comprises a material that can withstand degradation due to gas chemicals. In some embodiments, the seal 404 comprises a polymer, such as a perfluoropolymer (e.g., or XPE), polytetrafluoroethylene (PTFE), or silicone. Other materials are also contemplated, such as other petroleum-based polymers. Any material suitable for contacting the process gas flowing in the flow holes 112 may be utilized.

[0023] A plug 420, similar to plug 220 of Figures 2-3, is optionally disposed in dielectric body 102 adjacent to vane 218. Plug 420 and vane 218 may be provided as a single piece. Plug 420 comprises a porous material, such as ceramic, wherein the porosity may range, such as 10% to 80%, to allow gas flow through plug 420 to the passage defined by vane 218 and the adjacent sidewall of dielectric body 102. Like plug 220, plug 420 also serves to prevent ionized particles of material or ionized gas from the process environment from reaching the bonded material when substrate W is not present on dielectric body 102. Plug 420 is configured to receive ring 408. Ring 408 is disposed adjacent to seal 404 and in contact with both seal 404 and plug 420. Ring 408 may comprise a metal or ceramic material. Ring 408 provides an improved sealing surface for seal 404. Seal 404 contacts ring 408 to create a first seal point. Opposite ring 408, seal 404 contacts temperature control base 104 to create a second seal point. The first and second seal points prevent gas from bypassing seal 404 and isolate bond layer 406 from gas within flow hole 112. The embodiments herein provide an improved seal to protect bond layer 406 from process gases, thereby increasing the lifespan and durability of the bond material.

[0024] In certain embodiments, the bonding material of bonding layer 406 may be selected to improve one or more desired properties, such as heat transfer or high temperature adhesion. Some materials having desired properties may in turn have less resistance to degradation due to exposure to process gases within flow holes 112. By utilizing e.g. Figure 4 The seal 404 and ring 408 shown may be selected from a less resistant material for the bonding material because the seal 404 isolates the bonding layer 406 from the process gas. A second seal (not shown) may be provided at the outer periphery of the bonding layer 406, thereby encapsulating the bonding layer 406 in conjunction with the seal 404, the dielectric body 102, and the temperature control base 104. Thus, the substrate support 100 may have a bonding layer with desired properties without compromising the lifespan and durability of the bonding layer.

[0025] It will be understood that the embodiments disclosed herein are not limited to electrostatic chucks. The embodiments may be practiced with any structure in which a bonding layer is utilized. It will be further understood that the exemplary geometries disclosed herein do not limit the scope of the embodiments. Other geometries of the orifice and body are contemplated.

[0026] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow. Component Symbol List 100 substrate support 102 Dielectric Body 104 Temperature Control Base 106 bonding layer 106a Bonding layer 106b bonding layer 108 electrodes 110 channels 112 flow hole 208 Surface 210 Surface 212 grooves 212 grooves 214 Opening 216 Opening 218 blades 220 plug 302 Opening 306 bonding layer 404 seals 406 bonding layer 408 Ring 414 Opening 420 plug

Claims

1. A bonding layer structure comprising: a first body having a flow hole therethrough; a second body having a flow hole therethrough; and a bonding layer, disposed between the first body and the second body, the bonding layer comprising: a first bonding layer having a first opening extending through the first bonding layer; and A second bonding layer has a second opening extending therethrough, wherein the second opening has a diameter greater than a diameter of the first opening. 2 . The bonding layer structure of claim 1 , wherein the first bonding layer and the second bonding layer comprise bonding material sheets. The bonding layer structure of claim 1 , wherein the bonding layer comprises an organic material. The bonding layer structure according to claim 3 , wherein the organic material comprises silicone, acrylic or perfluoropolymer. 5 . The bonding layer structure of claim 1 , further comprising a porous plug disposed adjacent to the bonding layer.

6. The bonding layer structure of claim 1 , wherein the centers of the flow hole through the first body, the flow hole through the second body, the first opening through the first bonding layer, and the second opening through the second bonding layer are aligned along an axis extending therethrough.

7. A bonding layer structure comprising: an electrostatic chuck having a first hole formed therethrough; a temperature control base having a second hole formed therethrough; a bonding layer disposed between the electrostatic chuck and the temperature control base, the bonding layer having a total thickness between about 100 μm and about 800 μm, the bonding layer comprising: a first bonding layer having a first opening extending therethrough; and a second bonding layer having a second opening extending therethrough, wherein the second opening has a diameter greater than a diameter of the first opening; and A porous plug is disposed adjacent to the bonding layer. The bonding layer structure of claim 7 , wherein the bonding layer comprises an organic material. 9 . The bonding layer structure of claim 8 , wherein the organic material comprises silicone, acrylic, or perfluoropolymer.

10. The bonding layer structure of claim 7, wherein the second hole comprises a counterbore forming a cylindrical groove. 11 . The bonding layer structure according to claim 10 , wherein the diameter of the second opening is equal to or larger than the diameter of the cylindrical groove. 12 . The bonding layer structure of claim 10 , wherein a center of the first hole, a center of the second hole, a center of the first opening, and a center of the second opening are aligned along an axis extending therethrough.

13. The bonded layer structure of claim 7, further comprising a series of vanes formed in the electrostatic chuck and partially defining the first aperture.

14. A bonding layer structure comprising: an electrostatic chuck having a first hole formed therethrough; a temperature control base having a second aperture formed therethrough, wherein the second aperture comprises a first diameter and a second diameter different than the first diameter; a bonding layer, the bonding layer being disposed between the electrostatic chuck and the temperature control base, the bonding layer comprising: a first bonding layer adhered to the electrostatic chuck and having a first opening extending through the first bonding layer; and a second bonding layer adhered to the temperature control base and having a second opening extending through the second bonding layer, wherein the second opening has a diameter greater than a diameter of the first opening; and A porous plug is disposed adjacent to the bonding layer. 15 . The bonding layer structure of claim 14 , wherein the second diameter of the temperature control base is smaller than the first diameter of the temperature control base. 16 . The bonding layer structure of claim 14 , wherein a diameter of the second opening of the second bonding layer is substantially equal to or larger than the first diameter of the temperature control base. 17 . The bonding layer structure of claim 14 , wherein a diameter of the first opening of the first bonding layer is substantially equal to the first diameter of the temperature control base.

18. The bonding layer structure of claim 14, wherein the bonding layer comprises an organic material.

19. The bonding layer structure of claim 14, wherein the bonding layer comprises an inorganic material.

20. The bonding layer structure of claim 14, wherein a center of the first hole, a center of the second hole, a center of the first opening, and a center of the second opening are aligned along an axis extending therethrough.

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