A semiconductor laser element having a layer of topological phononic states

By setting multiple topological phonon state layers in semiconductor laser elements and controlling their electron drift rate and phonon energy distribution, the thermal loss problem of nitride semiconductor lasers is solved, and the heat dissipation performance and beam quality of the lasers are improved.

CN120728359BActive Publication Date: 2026-05-08GEN SEMICONDUCTOR (ANHUI) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GEN SEMICONDUCTOR (ANHUI) CO LTD
Filing Date
2025-07-02
Publication Date
2026-05-08

AI Technical Summary

Technical Problem

Nitride semiconductor lasers suffer from high heat loss and poor heat dissipation, which leads to problems such as redshift of lasing wavelength, decreased quantum efficiency, reduced power, increased threshold current, shorter lifetime and decreased reliability.

Method used

A multilayer topological phonon state layer is set between the lower waveguide layer and the lower confinement layer of a semiconductor laser element. Its saturated electron drift rate, electron affinity and polarization optical phonon energy distribution characteristics are designed to control the topological quantum state and phonon spectrum, reduce the Stokes frequency shift loss of the energy difference between pump light and oscillating light photons, and suppress thermal stress and temperature quenching.

Benefits of technology

By controlling the topological quantum state and phonon spectrum, heat loss can be reduced, the heat dissipation capacity of the laser can be improved, the quantum efficiency can be increased, the threshold current can be reduced, the beam quality can be improved, and laser beam depolarization and distortion can be suppressed.

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Abstract

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.
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Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a semiconductor laser element having a topological phonon state layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers and nitride semiconductor light-emitting diodes (LEDs) differ significantly:

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are spontaneously emitted, and the output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to quantum wells or pn junctions under the action of external voltage, generating radiative recombination. Lasers, on the other hand, require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) Non-radiative recombination loss and free carrier absorption in the active region of the laser chip generate a large amount of heat. At the same time, the resistance of the epitaxial and chip materials will generate Joule heat loss and carrier absorption loss under current injection. In addition, the low thermal conductivity of the chip material and poor heat dissipation performance lead to an increase in the temperature of the active layer, resulting in problems such as redshift of lasing wavelength, decrease in quantum efficiency, decrease in power, increase in threshold current, shortened lifetime and deterioration of reliability.

[0010] 2) Heat loss: The Stokes shift loss caused by the photon energy difference between the pump light and the oscillating light is converted into heat, and the energy loss due to the non-uniform coupling ratio from the pump level to the upper laser level is also converted into heat. Both of these generate a large amount of waste heat, causing uneven temperature distribution in the laser, resulting in uneven thermal expansion and thermal stress distribution, leading to temperature quenching, laser breakage, thermal lensing effect, and stress birefringence effect. Thermal lensing produces a lens-like phenomenon in space, while stress birefringence effect changes the polarization state of the incident light, causing depolarization and distortion of the laser beam. Summary of the Invention

[0011] To address one of the aforementioned technical problems, the present invention provides a semiconductor laser element having a topological phonon state layer.

[0012] This invention provides a semiconductor laser device with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A topological phonon state layer is disposed between the lower waveguide layer and the lower confinement layer. The topological phonon state layer includes, from bottom to top, a first topological phonon state layer, a second topological phonon state layer, and a third topological phonon state layer. The first, second, and third topological phonon state layers all possess saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarized optical phonon energy distribution characteristics.

[0013] The saturated electron drift velocity of the first topological phonon state layer has a curve distribution of function y1=A+B*lnx1+1 / x1-1;

[0014] The saturated electron drift velocity of the second topological phonon state layer has a linear function distribution;

[0015] The saturated electron drift velocity of the third topological phonon state layer has a second-fourth quadrant curve distribution of the function y2=C+D*cosx3 / x3;

[0016] The electron affinity of the first topological phonon state layer has the function y3 = E + F * lnx1 / e x1 Curve distribution;

[0017] The electron affinity of the second topological phonon state layer has a linear function distribution;

[0018] The electron affinity of the third topological phonon state layer has the function y4 = G + H*sinx3 / x3 2 Third quadrant curve distribution;

[0019] The polarized optical phonon energy of the first topological phonon state layer has a curve distribution of function y5=I+J*lnx1 / x1;

[0020] The polarized optical phonon energy of the second topological phonon state layer has a linear function distribution;

[0021] The polarized optical phonon energy of the third topological phonon state layer has the function y6=K+L*x3e x3 Curve distribution;

[0022] Where x1 is the depth from the first topological phonon state layer to the second topological phonon state layer, and x3 is the depth from the third topological phonon state layer to the lower waveguide layer.

[0023] Preferably, the saturated electron drift velocity of the first topological phonon state layer is a, the saturated electron drift velocity of the second topological phonon state layer is b, and the saturated electron drift velocity of the third topological phonon state layer is c, wherein: 1E6≤a≤b≤c≤5E8 (cm / s).

[0024] Preferably, the electron affinity of the first topological phonon state layer is d, the electron affinity of the second topological phonon state layer is e, and the electron affinity of the third topological phonon state layer is f, wherein: 0.1≤e≤d≤f≤10(eV).

[0025] Preferably, the polarized optical phonon energy of the first topological phonon state layer is g, the polarized optical phonon energy of the second topological phonon state layer is h, and the polarized optical phonon energy of the third topological phonon state layer is i, where: 5≤i≤h≤g≤500(meV).

[0026] Preferably, the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer also have refractive index coefficient distribution characteristics;

[0027] The refractive index coefficient of the first topological phonon state layer has the function y7=M+N*sin / x1 2 Curve distribution in the first quadrant;

[0028] The refractive index coefficient of the second topological phonon state layer has a linear function distribution;

[0029] The refractive index coefficient of the third topological phonon state layer has the function y8=O+P*sinx3 / x3 2 Third quadrant curve distribution;

[0030] The refractive index coefficient of the first topological phonon state layer is j, the refractive index coefficient of the second topological phonon state layer is k, and the refractive index coefficient of the third topological phonon state layer is l, where: 1≤j≤k≤l≤5.

[0031] Preferably, the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer also have transverse phonon velocity distribution characteristics;

[0032] The transverse phonon velocity of the first topological phonon state layer has the function y9=Q+R*x1 / e x1 Curve distribution;

[0033] The transverse phonon velocity of the second topological phonon state layer has a linear function distribution;

[0034] The transverse phonon velocity of the third topological phonon state layer has a function y 10 =S+T*x3 2 e x3 Third quadrant curve distribution;

[0035] The transverse phonon velocity of the first topological phonon state layer is m, the transverse phonon velocity of the second topological phonon state layer is n, and the transverse phonon velocity of the third topological phonon state layer is p, where: 5E4≤m≤n≤p≤5E7 (cm / s).

[0036] Preferably, the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer also have longitudinal phonon velocity distribution characteristics;

[0037] The longitudinal phonon velocity of the first topological phonon state layer has a function y 11 =U+V*x1 / e x1 Curve distribution;

[0038] The longitudinal phonon velocity of the second topological phonon state layer has a linear function distribution;

[0039] The longitudinal phonon velocity of the third topological phonon state layer has the function y = W + Z * x³ 2 e x3 Third quadrant curve distribution;

[0040] The longitudinal phonon velocity of the first topological phonon state layer is r, the longitudinal phonon velocity of the second topological phonon state layer is s, and the longitudinal phonon velocity of the third topological phonon state layer is t, where: 5E4≤r≤s≤t≤5E7 (cm / s).

[0041] Preferably, the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (lead formimide iodide), CsPbI3, and Bi2O2Se.

[0042] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥z≥1;

[0043] The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 angstroms to 100 angstroms.

[0044] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0045] Preferably, the lower confinement layer, lower waveguide layer, upper waveguide layer, and upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0046] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0047] The beneficial effects of this invention are as follows: This invention provides a multi-layered topological phonon state layer between the lower waveguide layer and the lower confinement layer of a semiconductor laser element, and designs the saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarization optical phonon energy distribution characteristics of each topological phonon state layer. This enables tunable topological phase transitions of the topological quantum states and phonon spectrum, changes in quantum states and lattice vibration modes, reduces Stokes frequency shift loss due to the energy difference between pump light and oscillating light photons, and suppresses thermal stress and temperature quenching problems in the laser. Attached Figure Description

[0048] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0049] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with a topological phonon state layer according to an embodiment of the present invention;

[0050] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser element with a topological phonon state layer as described in an embodiment of the present invention.

[0051] Figure label:

[0052] 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Upper confinement layer; 106. Topological phonon state layer.

[0053] 106a, First topological phonon state layer; 106b, Second topological phonon state layer; 106c, Third topological phonon state layer. Detailed Implementation

[0054] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0055] like Figure 1 and Figure 2 As shown, this embodiment proposes a semiconductor laser device with a topological phonon state layer, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 arranged sequentially from bottom to top. A topological phonon state layer 106 is also provided in this semiconductor laser device with a topological phonon state layer.

[0056] Specifically, in this embodiment, the semiconductor laser element having a topological phonon state layer is provided with, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A topological phonon state layer 106 is disposed between the lower waveguide layer 102 and the lower confinement layer 101. This topological phonon state layer 106 has a multilayer structure, specifically including a first topological phonon state layer 106a, a second topological phonon state layer 106b, and a third topological phonon state layer 106c, which are arranged sequentially from bottom to top.

[0057] In this embodiment, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c all possess certain specific physical property distributions, including but not limited to saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarized optical phonon energy distribution characteristics. Specifically, the saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarized optical phonon energy distribution characteristics in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c are as follows:

[0058] Saturated electron drift velocity distribution:

[0059] The saturated electron drift velocity of the first topological phonon state layer 106a has a curve distribution of function y1=A+B*lnx1+1 / x1-1;

[0060] The saturated electron drift velocity of the second topological phonon state layer 106b has a linear function distribution.

[0061] The saturated electron drift velocity of the third topological phonon state layer 106c has a second-fourth quadrant curve distribution of the function y2=C+D*cosx3 / x3;

[0062] Electron affinity distribution:

[0063] The electron affinity of the first topological phonon state layer 106a has the function y3 = E + F * lnx1 / e x1 Curve distribution;

[0064] The electron affinity of the second topological phonon state layer 106b has a linear function distribution.

[0065] The electron affinity of the third topological phonon state layer 106c has the function y⁴ = G + H*sinx³ / x³ 2 Third quadrant curve distribution;

[0066] Polarized optical phonon energy distribution:

[0067] The polarized optical phonon energy of the first topological phonon state layer 106a has a function y5=I+J*lnx1 / x1 curve distribution;

[0068] The polarized optical phonon energy of the second topological phonon state layer 106b has a linear function distribution.

[0069] The polarized optical phonon energy of the third topological phonon state layer 106c has the function y6=K+L*x3e x3 Curve distribution;

[0070] Where x1 is the depth from the first topological phonon state layer 106a to the second topological phonon state layer 106b, and x3 is the depth from the third topological phonon state layer 106c to the lower waveguide layer 102.

[0071] In this embodiment, a multi-layered topological phonon state layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101 of the semiconductor laser element. The saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarized optical phonon energy distribution characteristics of each topological phonon state layer are designed to tunable topological quantum states and phonon spectrum topological phase transitions, change quantum states and lattice vibration modes, reduce Stokes frequency shift loss due to the energy difference between pump light and oscillating light photons, and suppress thermal stress and temperature quenching problems of the laser.

[0072] In some optional embodiments, the saturated electron drift velocity, electron affinity, and polarization optical phonon energy in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c also have a certain magnitude relationship, specifically:

[0073] Saturated electron drift rate:

[0074] The saturated electron drift velocity of the first topological phonon state layer 106a is a;

[0075] The saturated electron drift velocity of the second topological phonon state layer 106b is b;

[0076] The saturated electron drift velocity of the third topological phonon state layer 106c is c;

[0077] The relationship between the saturated electron drift velocities in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c is: 1E6≤a≤b≤c≤5E8 (cm / s).

[0078] Electron affinity:

[0079] The electron affinity of the first topological phonon state layer 106a is d;

[0080] The electron affinity of the second topological phonon state layer 106b is e;

[0081] The electron affinity of the third topological phonon state layer 106c is f;

[0082] The electron affinity relationships in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c are: 0.1≤e≤d≤f≤10(eV).

[0083] Polarized optical phonon energy:

[0084] The polarized optical phonon energy of the first topological phonon state layer 106a is g;

[0085] The polarized optical phonon energy of the second topological phonon state layer 106b is h;

[0086] The polarized optical phonon energy of the third topological phonon state layer 106c is i;

[0087] The polarization optical phonon energy relationships in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c are: 5≤i≤h≤g≤500(meV).

[0088] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c also have refractive index coefficient distribution characteristics, specifically manifested as follows:

[0089] The refractive index coefficient of the first topological phonon state layer 106a has the function y7=M+N*sin / x1 2 Curve distribution in the first quadrant;

[0090] The refractive index coefficient of the second topological phonon state layer 106b has a linear function distribution;

[0091] The refractive index coefficient of the third topological phonon state layer 106c has the function y8=O+P*sinx3 / x3 2 The distribution of curves in the third quadrant.

[0092] More specifically, the refractive index coefficient of the first topological phonon state layer 106a is j, the refractive index coefficient of the second topological phonon state layer 106b is k, and the refractive index coefficient of the third topological phonon state layer 106c is l. The relationship between the refractive index coefficients of the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c is: 1≤j≤k≤l≤5.

[0093] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c also have transverse phonon velocity distribution characteristics, specifically manifested as follows:

[0094] The transverse phonon velocity of the first topological phonon state layer 106a has the function y9=Q+R*x1 / e x1 Curve distribution;

[0095] The transverse phonon velocity of the second topological phonon state layer 106b has a linear function distribution.

[0096] The transverse phonon velocity of the third topological phonon state layer 106c has a function y 10 =S+T*x3 2 e x3 The distribution of curves in the third quadrant.

[0097] More specifically, the transverse phonon velocity of the first topological phonon state layer 106a is m, the transverse phonon velocity of the second topological phonon state layer 106b is n, and the transverse phonon velocity of the third topological phonon state layer 106c is p. The relationship between the transverse phonon velocities of the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c is: 5E4≤m≤n≤p≤5E7 (cm / s).

[0098] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c also have longitudinal phonon velocity distribution characteristics, specifically manifested as follows:

[0099] The longitudinal phonon velocity of the first topological phonon state layer 106a has a function y 11 =U+V*x1 / e x1 Curve distribution;

[0100] The longitudinal phonon velocity of the second topological phonon state layer 106b has a linear function distribution.

[0101] The longitudinal phonon velocity of the third topological phonon state layer 106c has the function y = W + Z*x³. 2 e x3 The distribution of curves in the third quadrant.

[0102] More specifically, the longitudinal phonon velocity of the first topological phonon state layer 106a is r, the longitudinal phonon velocity of the second topological phonon state layer 106b is s, and the longitudinal phonon velocity of the third topological phonon state layer 106c is t. The relationship between the longitudinal phonon velocities of the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c is: 5E4≤r≤s≤t≤5E7 (cm / s).

[0103] This embodiment, by designing specific refractive index coefficient distribution characteristics, transverse phonon velocity distribution characteristics, and longitudinal phonon velocity distribution characteristics in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c, can reduce the energy of polar covalent bonds and resonant bonds, reduce phonon anharmonicity, improve thermal conductivity, reduce laser heat loss, improve laser heat dissipation capacity, reduce heat accumulation in the active layer, and lower the temperature of the active layer. This can improve the quantum efficiency of the laser, reduce the threshold current, improve the beam output, improve the laser beam quality factor, and suppress laser beam depolarization and distortion problems.

[0104] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (lead formimide iodide), CsPbI3, and Bi2O2Se.

[0105] In some alternative embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ z ≥ 1.

[0106] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 angstroms to 100 angstroms.

[0107] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0108] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0109] In some alternative embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0110] The table below compares the parameters of a conventional semiconductor laser element and the semiconductor laser element with a topological phonon state layer proposed in this embodiment, including beam quality factor, threshold current density, optical power, and temperature quenching ratio, showing the differences between the conventional semiconductor laser element and the semiconductor laser element with a topological phonon state layer proposed in this embodiment:

[0111]

[0112] As can be seen, the semiconductor laser element with topological phonon state layer proposed in this embodiment improves the beam quality factor and optical power, and reduces the threshold current density and temperature quenching ratio compared with traditional semiconductor laser elements, showing significant advantages over traditional semiconductor laser elements.

[0113] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor laser device having a topological phonon state layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, characterized in that, A topological phonon state layer is disposed between the lower waveguide layer and the lower confinement layer. The topological phonon state layer includes a first topological phonon state layer, a second topological phonon state layer, and a third topological phonon state layer disposed sequentially from bottom to top. The first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer all have saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarized optical phonon energy distribution characteristics. The saturated electron drift velocity of the first topological phonon state layer has a curve distribution of function y1=A+B*lnx1+1 / x1-1; The saturated electron drift velocity of the second topological phonon state layer has a linear function distribution; The saturated electron drift velocity of the third topological phonon state layer has a second four-quadrant curve distribution of the function y2=C+D*cosx3 / x3. The electron affinity of the first topological phonon state layer has the function y3=E+F*lnx1 / e x1 Curve distribution; The electron affinity of the second topological phonon state layer has a linear function distribution; The electron affinity of the third topological phonon state layer has the function y4=G+H*sinx3 / x3 2 Third quadrant curve distribution; The polarized optical phonon energy of the first topological phonon state layer has a curve distribution of function y5=I+J*lnx1 / x1; The polarized optical phonon energy of the second topological phonon state layer has a linear function distribution; The polarized optical phonon energy of the third topological phonon state layer has the function y6=K+L*x3e x3 Curve distribution; Where x1 is the depth from the first topological phonon state layer to the second topological phonon state layer, and x3 is the depth from the third topological phonon state layer to the lower waveguide layer.

2. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The saturated electron drift velocity of the first topological phonon state layer is a, the saturated electron drift velocity of the second topological phonon state layer is b, and the saturated electron drift velocity of the third topological phonon state layer is c, wherein: 1E6cm / s≤a≤b≤c≤5E8cm / s.

3. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The electron affinity of the first topological phonon state layer is d, the electron affinity of the second topological phonon state layer is e, and the electron affinity of the third topological phonon state layer is f, where: 0.1eV≤e≤d≤f≤10eV.

4. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The polarized optical phonon energy of the first topological phonon state layer is g, the polarized optical phonon energy of the second topological phonon state layer is h, and the polarized optical phonon energy of the third topological phonon state layer is i, where: 5meV≤i≤h≤g≤500meV.

5. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The first, second, and third topological phonon state layers also exhibit refractive index coefficient distribution characteristics. The refractive index coefficient of the first topological phonon state layer has the function y7=M+N*sin / x1 2 Curve distribution in the first quadrant; The refractive index coefficient of the second topological phonon state layer has a linear function distribution; The refractive index coefficient of the third topological phonon state layer has the function y8=O+P*sinx3 / x3 2 Third quadrant curve distribution; The refractive index coefficient of the first topological phonon state layer is j, the refractive index coefficient of the second topological phonon state layer is k, and the refractive index coefficient of the third topological phonon state layer is l, where: 1≤j≤k≤l≤5.

6. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The first, second, and third topological phonon state layers also exhibit transverse phonon velocity distribution characteristics. The transverse phonon velocity of the first topological phonon state layer has the function y9=Q+R*x1 / e x1 Curve distribution; The transverse phonon velocity of the second topological phonon state layer has a linear function distribution; The transverse phonon velocity of the third topological phonon state layer has a function y 10 =S+T*x3 2 e x3 Third quadrant curve distribution; The transverse phonon velocity of the first topological phonon state layer is m, the transverse phonon velocity of the second topological phonon state layer is n, and the transverse phonon velocity of the third topological phonon state layer is p, where: 5E4cm / s≤m≤n≤p≤5E7cm / s.

7. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The first, second, and third topological phonon state layers also exhibit longitudinal phonon velocity distribution characteristics. The longitudinal phonon velocity of the first topological phonon state layer has a function y 11 =U+V*x1 / e x1 Curve distribution; The longitudinal phonon velocity of the second topological phonon state layer has a linear function distribution; The longitudinal phonon velocity of the third topological phonon state layer has the function y=W+Z*x3 2 e x3 Third quadrant curve distribution; The longitudinal phonon velocity of the first topological phonon state layer is r, the longitudinal phonon velocity of the second topological phonon state layer is s, and the longitudinal phonon velocity of the third topological phonon state layer is t, wherein: 5E4cm / s≤r≤s≤t≤5E7cm / s.

8. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (lead formimide iodide), CsPbI3, and Bi2O2Se.

9. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥z≥1; The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 angstroms to 100 angstroms. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

10. The semiconductor laser element with a topological phonon state layer according to claim 1, characterized in that, The lower confinement layer, lower waveguide layer, upper waveguide layer, and upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The substrates include sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrates, Mo, TiW, CuW, Cu, sapphire / AlN composite substrates, diamond, and sapphire / SiN. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

Citation Information

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