Ka-band amplitude-phase control solid-state power amplifier circuit and assembly

Abstract

The invention discloses a Ka-band amplitude-phase control solid-state power amplifier circuit and assembly in the technical field of radar. The Ka-band amplitude-phase control solid-state power amplifier circuit comprises a push-stage power amplifier chip, a power divider and an amplitude-phase module which are connected in sequence, wherein the number of the amplitude-phase modules is multiple, and the multiple detachable amplitude-phase modules are connected with a distribution port of the power divider; the amplitude-phase module comprises a numerical control phase shifter, a switch, a low-noise amplifier and a numerical control attenuator which are connected in sequence, and further comprises a serial-parallel chip, and the numerical control phase shifter and the numerical control attenuator are controlled by the serial-parallel chip. The amplitude and phase module has the amplitude and phase modulation function, the amplitude and phase module is detachable, the amplitude and phase module can be conveniently adjusted according to project requirements, the amplitude and phase module is not adjusted in principle except the amplitude and phase module, the research and development period is shortened, and the research and development cost is reduced.

Description

Technical Field

[0001] The present invention relates to a Ka-band amplitude-phase controlled solid-state power amplifier circuit and component, belonging to the technical field of radar. Background Art

[0002] Solid-state power amplifier components play a vital role in radar phased arrays, electronic countermeasures, and other fields. However, as system frequencies increase and wavelengths decrease, compact dimensions increase, making phase consistency increasingly difficult for Ka-band solid-state power amplifier components. Ka-band chips are relatively expensive, making it crucial to tailor chip selection to the specific frequency band. However, replaceable amplitude and phase modules are difficult to implement, and conventional multilayer boards exhibit significant losses in the Ka-band. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a Ka-band amplitude-phase controlled solid-state power amplifier circuit and component.

[0004] In order to solve the above technical problems, the present invention is implemented by adopting the following technical solutions.

[0005] In a first aspect, the present invention discloses a Ka-band amplitude-phase controlled solid-state power amplifier circuit, comprising: a driver-stage power amplifier chip, a power divider, and an amplitude-phase module connected in sequence; There are multiple amplitude and phase modules, and multiple detachable amplitude and phase modules are connected to the distribution port of the power distributor; The amplitude-phase module includes a digitally controlled phase shifter, a switch, a low-noise amplifier, and a digitally controlled attenuator connected in sequence, and also includes a serial-parallel chip. The digitally controlled phase shifter and the digitally controlled attenuator are controlled by the serial-parallel chip.

[0006] Based on the above technical solution, the amplitude and phase module has amplitude modulation and phase modulation functions, and the amplitude and phase module is detachable to facilitate adjustment of the amplitude and phase module according to project requirements. In principle, no adjustment is required except for the amplitude and phase module, thereby saving R&D cycle and reducing R&D costs.

[0007] Furthermore, the amplitude and phase module includes an upper circuit board and a lower circuit board, wherein the upper circuit board is used to transmit radio frequency signals and the lower circuit board is used to transmit digital signals. Based on the above technical solution, the amplitude and phase module is easy to reduce in size and reduce the interference of digital signals in the radio frequency area.

[0008] Furthermore, the RF input interface and RF output interface of the upper circuit board are both edge-wrapped. Based on the above technical solution, the inherent ground discontinuity problem of the multilayer board is improved, thereby reducing link loss.

[0009] Furthermore, copper is laid around the outer contour lines of the RF input and RF output ends of the upper circuit board, microstrip lines are arranged inside the outer contour lines, and grounding columns are provided on both sides of the microstrip lines of the RF input and RF output ends; the digitally controlled phase shifter, switch, low-noise amplifier, and digitally controlled attenuator are connected in sequence through gold wire bonds of the microstrip lines; based on the above technical solution, the ground discontinuity problem is further improved, and the impedance mismatch caused by gold wire bonding is also improved.

[0010] Furthermore, the upper circuit board also includes a serial-parallel chip, which receives control signals from the outside and transmits them to the digitally controlled phase shifter and the digitally controlled attenuator through signal transmission lines. Based on the above technical solution, the amplitude and phase module control is facilitated.

[0011] Furthermore, two first attenuators are included, and the first attenuators, the driver-stage power amplifier chip, the first attenuator, and the power divider are connected in sequence. Based on the above technical solution, the first attenuators play a role in protecting the driver-stage power amplifier chip and improving impedance matching.

[0012] Furthermore, the amplitude-phase module also includes two second attenuators. The second attenuators, digitally controlled phase shifter, switch, low-noise amplifier, second attenuator, and digitally controlled attenuator are sequentially connected via microstrip wire bonds. Based on the above technical solution, the second attenuators in the amplitude-phase module improve impedance matching and flatness of the amplitude-phase module.

[0013] In a second aspect, the present invention further discloses a Ka-band amplitude-phase-controlled solid-state power amplifier component, comprising a shell and the Ka-band amplitude-phase-controlled solid-state power amplifier circuit arranged in the shell.

[0014] Furthermore, the housing is aluminum, and the sealing cover is aluminum and laser-sealed. Based on the above technical solution, laser sealing can provide electromagnetic shielding, isolating the amplitude and phase modules or driver-stage amplifier chips installed therein, thereby preventing interference from external signals. Laser sealing also meets high airtightness requirements, preventing moisture, dust, and other intrusions, thereby improving reliability and extending component life.

[0015] Furthermore, the end of the shell is provided with an RF input connector and several RF output connectors; each of the RF output connectors is connected to an amplitude and phase module; an RF board is provided in the shell, and the driver-stage power amplifier chip, power distributor, and amplitude and phase module are connected via the RF board; a front circuit board is provided on the front of the shell, and a back circuit board is provided on the back of the shell; the back circuit board leads the power supply control inside the shell to the outside of the shell through a feed insulator and interconnects with the front circuit board. Based on the above technical solution, the front circuit board serves the functions of power supply, external communication and control, and the back circuit board realizes power supply and control of the internal chip under the premise of meeting the airtightness requirements.

[0016] The beneficial effects achieved by the present invention are as follows: the present invention innovatively adopts multiple detachable amplitude and phase modules to connect the power distributor to realize multi-channel amplitude modulation and phase modulation functions, and the amplitude and phase modules can be flexibly adjusted according to project requirements, and in principle, no adjustment is required except for the amplitude and phase modules, thereby saving R&D cycle and reducing R&D costs. Technically, the amplitude and phase modules are designed as multi-layer boards, which reduces the size of the amplitude and phase modules and reduces the interference of digital signals in the RF area; the use of edge treatment and external molding lines improves the inherent ground discontinuity problem of the multi-layer board, reduces link loss, and improves the impedance mismatch caused by gold wire bonding; the introduction of serial-parallel chips reduces the number of control code bits, which is convenient for amplitude and phase module control; the attenuator plays a role in protecting the driving stage power amplifier chip and improving impedance matching. In terms of process, the feed insulator power supply control method and laser sealing technology are used to prevent the chip from being interfered with by external signals while ensuring the airtightness requirements, improving overall reliability and extending the life of the component. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A circuit diagram of the present invention; Figure 2 This is the circuit diagram of the amplitude and phase module of the present invention; Figure 3 This is a top view of the amplitude and phase module of the present invention; Figure 4 A top view of the present invention; Figure 5 It is a back view of the present invention.

[0018] In the figure: 1- driver-stage amplifier chip; 2- power divider; 3- amplitude-phase module; 4- front circuit board; 5- first circuit board on the back; 6- second circuit board on the back; 7- digitally controlled phase shifter; 8- switch; 9- low-noise amplifier; 10- digitally controlled attenuator; 11- serial-parallel chip; 12- outer molding line; 13- microstrip line; 14- grounding column; 15- first attenuator; 16- attenuator in the amplitude-phase module; 17- connection hole. DETAILED DESCRIPTION

[0019] The present invention will be further described below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention.

[0020] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0021] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0022] Example 1, as Figure 1-Figure 3 As shown, this embodiment introduces a Ka-band amplitude-phase controlled solid-state power amplifier circuit, comprising: a driver-stage power amplifier chip 1, a power divider 2, and an amplitude-phase module 3 connected in sequence; There are four amplitude and phase modules 3, and the four detachable amplitude and phase modules 3 are respectively connected to the four distribution ports of the power distributor 2. Specifically, the installation and removal are achieved by using the connection holes 17 on the two diagonal corners of the amplitude and phase modules with screws; The amplitude-phase module 3 includes a digitally controlled phase shifter 7 , a switch 8 , a low noise amplifier 9 , and a digitally controlled attenuator 10 connected in sequence, and also includes a serial-parallel chip 11 . The digitally controlled phase shifter 7 and the digitally controlled attenuator 10 are controlled by the serial-parallel chip 11 .

[0023] like Figure 3 As shown, the amplitude and phase module 3 includes an upper circuit board and a lower circuit board. The upper circuit board is used to transmit radio frequency signals, and the lower circuit board is used to transmit digital signals. The lower circuit board is only provided with signal lines.

[0024] The RF input interface and the RF output interface of the upper circuit board are both provided with an outer contour line 12, copper is laid around the outer contour line 12, a microstrip line 13 is provided inside the outer contour line 12, and grounding posts 14 are provided on both sides of the microstrip line 13 at the input interface and the output interface; The RF input interface, CNC phase shifter 7, switch 8, low noise amplifier 9, CNC attenuator 10 are connected by microstrip lines, and the RF output interface is connected in sequence through gold wire bonds of microstrip lines 12; the RF input interface and RF output interface of the upper circuit board are both edge-wrapped.

[0025] The upper circuit board further includes a serial-parallel chip 11 , which receives a control signal and transmits it to the digitally controlled phase shifter 7 and the digitally controlled attenuator 10 through a signal transmission line.

[0026] It also includes two first attenuators 15. The first attenuators 15, the driver-stage power amplifier chip 1, the first attenuator 15, and the power distributor 2 are connected in sequence. In this embodiment, the first attenuator 15 is a fixed attenuator.

[0027] The amplitude and phase module 3 further includes two attenuators 16. The attenuator 16, the digitally controlled phase shifter (7), the switch 8, the low noise amplifier 9, the second attenuator 16, and the digitally controlled attenuator 10 are sequentially connected via microstrip line gold wire bonds. In this embodiment, the second attenuator 16 is a fixed attenuator.

[0028] Example 2, based on the same inventive concept as Example 1, introduces a Ka-band amplitude-phase controlled solid-state power amplifier circuit, comprising a driver-stage power amplifier chip 1, a power divider 2, and an amplitude-phase module 3, connected in sequence. The amplitude-phase module is located at the four-centimeter output end and is replaceable.

[0029] Figure 1 The circuit in FIG1 outputs four signals, so the power divider 2 is a four-way power divider, and the four output terminals are connected to four amplitude and phase modules respectively. The driver-stage power amplifier chip 1 uses a GaAs type chip to ensure good linearity.

[0030] Figure 1 The amplitude and phase module circuit in Figure 2 As shown, the circuit includes a digitally controlled phase shifter 7, a single-pole, single-throw switch 8, a low-noise amplifier 9, and a digitally controlled attenuator 10, connected in sequence. The digitally controlled phase shifter and digitally controlled attenuator 11 are controlled by a serial-parallel chip. The single-pole, single-throw switch increases the channel off-ratio, while the low-noise amplifier compensates for the losses introduced by the digitally controlled phase shifter and digitally controlled attenuator.

[0031] The amplitude and phase module is a multi-layer board, the upper layer transmits RF signals, and the lower layer transmits digital signals. Figure 2The two ends of the amplitude and phase module shown are wrapped, copper is laid around the outer shape line, the microstrip line avoids the copper area, and there are ground posts on both sides of the microstrip line.

[0032] The housing is equipped with an RF input connector and several output connectors. Each RF output connector is connected to an amplitude and phase module, using SSMP connectors for easy expansion. The RF input connector uses a 2.92mm connector for easy connection. The driver-stage amplifier chip 1 and the amplitude and phase module 3 are connected to the circuit board at the bottom via feed insulators for power supply and control.

[0033] Example 3 is based on the same inventive concept as Example 1. Figure 4 and Figure 5 As shown, this embodiment introduces a Ka-band amplitude-phase controlled solid-state power amplifier component, including a shell and a Ka-band amplitude-phase controlled solid-state power amplifier circuit arranged in the shell: wherein the driver-stage power amplifier chip 1 and the amplitude-phase module 3 are directly arranged on the shell, and integrated with the power divider 2 on a radio frequency board. A front circuit board 4 is installed on the front for control, and a back second circuit board 6 is installed on the back to lead the power supply of the driver-stage power amplifier chip 1 to the outside of the shell through a feeding insulator and interconnect with the front circuit board 4. A back first circuit board 5 is installed on the back to lead the power supply control of the amplitude-phase module 3 to the outside of the shell through a feeding insulator. The back first circuit board 5 and the back second circuit board 6 can be integrated into one circuit board.

[0034] The output power of the present invention is less than 10dBm, and the final power amplifier module can be connected subsequently according to demand. The radio frequency can be connected through an SSMP type connector, and the power supply and control can be connected through the second circuit board 6 on the back.

[0035] When assembling the chip, sintering and pasting are used according to the heat level. The specific assembly process is as follows: 1) Solder the RF board to the housing using 240°C solder paste.

[0036] 2) The RF input connector and several output connectors are soldered to the housing with 217°C solder rings.

[0037] 3) The driver-stage power amplifier chip 1 is eutectic-welded to a molybdenum-copper (Mo70Cu30) carrier on a hot plate using 280°C solder (Au80Sn20). After the carrier is sintered, the driver-stage power amplifier chip 1 is friction-welded to the housing using 179°C solder paste on a hot plate.

[0038] 4) The amplitude-phase module 3 can be assembled together with the housing or separately. The process is to glue the CNC phase shifter, single-pole single-throw switch, low-noise amplifier, CNC attenuator, serial-parallel chip, and fixed attenuator chip to the amplitude-phase module with conductive adhesive, and cure in an oven at 150°C for 1 hour.

[0039] 5) Use conductive glue to glue the amplitude and phase module 3 into the housing (screws are required for fixation), and cure it in an oven at 150°C for 1 hour.

[0040] 6) Gold wire bonding.

[0041] The shell is made of aluminum 6061, the inner cover is made of aluminum 6061, and the sealing cover is made of aluminum 4047, which is laser sealed.

[0042] The main heat dissipation chip in the power amplifier component is the driver-level power amplifier chip, and the heat dissipation of other chips is small and can be ignored. According to the thermal parameters of the driver-level power amplifier chip, heat dissipation only requires air cooling.

[0043] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A Ka-band amplitude-phase controlled solid-state power amplifier circuit, characterized in that: include: A driver-stage power amplifier chip (1), a power distributor (2), and an amplitude-phase module (3) connected in sequence; There are multiple amplitude and phase modules (3), and the multiple detachable amplitude and phase modules (3) are connected to the distribution ports of the power distributor (2); The amplitude-phase module (3) comprises a digitally controlled phase shifter (7), a switch (8), a low-noise amplifier (9), and a digitally controlled attenuator (10) connected in sequence, and also comprises a serial-parallel chip (11), wherein the digitally controlled phase shifter (7) and the digitally controlled attenuator (10) are controlled by the serial-parallel chip (11).

2. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 1, characterized in that: The amplitude and phase module (3) comprises an upper circuit board and a lower circuit board, the upper circuit board is used to transmit radio frequency signals, and the lower circuit board is used to transmit digital signals.

3. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 2, characterized in that: Copper is laid around the outer contour lines (12) of the radio frequency input and radio frequency output of the upper circuit board, a microstrip line (13) is arranged inside the outer contour line (12), and grounding posts (14) are provided on both sides of the microstrip line (13) of the radio frequency input and radio frequency output; The digital controlled phase shifter (7), the switch (8), the low noise amplifier (9), and the digital controlled attenuator (10) are sequentially connected via gold wire bonds of a microstrip line (12).

4. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 3, characterized in that: The radio frequency input end and the radio frequency output end of the upper circuit board are both edge-wrapped.

5. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 3, characterized in that: The upper circuit board further comprises a serial-parallel chip (11), which receives a control signal from the outside and transmits the control signal to the digitally controlled phase shifter (7) and the digitally controlled attenuator (10) via a signal transmission line.

6. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 1, characterized in that: It also includes two first attenuators (15), wherein the first attenuator (15), the driver-stage power amplifier chip (1), the first attenuator (15), and the power distributor (2) are connected in sequence.

7. The Ka-band amplitude-phase controlled solid-state power amplifier circuit according to claim 1, characterized in that: The amplitude-phase module (3) further includes two second attenuators (16), and the second attenuators (16), the digitally controlled phase shifter (7), the switch (8), the low-noise amplifier (9), the second attenuator (16), and the digitally controlled attenuator (10) are sequentially connected via microstrip line gold wire bonds.

8. A Ka-band amplitude-phase controlled solid-state power amplifier assembly, characterized in that: The invention comprises a shell and a Ka-band amplitude-phase controlled solid-state power amplifier circuit as claimed in any one of claims 1 to 7, which is arranged in the shell.

9. The Ka-band amplitude-phase controlled solid-state power amplifier assembly according to claim 8, characterized in that: The shell is an aluminum shell, and the sealing cover is made of aluminum and is laser sealed.

10. The Ka-band amplitude-phase controlled solid-state power amplifier assembly according to claim 8, characterized in that: The end of the shell is provided with a radio frequency input connector and a plurality of radio frequency output connectors; Each of the RF output connectors is connected to an amplitude and phase module; A radio frequency board is provided in the housing, and the driver-stage power amplifier chip (1), the power distributor (2), and the amplitude and phase module (3) are connected via the radio frequency board; A front circuit board is provided on the front of the housing, and a back circuit board is provided on the back of the housing; The back circuit board leads the power supply control in the shell to the outside of the shell through the feeding insulator and is interconnected with the front circuit board.

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