Radio frequency module

Abstract

The application provides a radio frequency module, which comprises a power amplifier chip, a high-frequency switch circuit, a medium-frequency switch circuit, a low-frequency switch circuit, a control unit, a substrate, a high-frequency signal input end, a medium-frequency signal input end, a low-frequency signal input end, a power supply voltage end, a high-frequency signal receiving end, a high-frequency signal output end, a medium-frequency signal output end and a low-frequency signal output end; the power amplifier chip, the high-frequency switch circuit, the medium-frequency switch circuit, the low-frequency switch circuit and the control unit are fixedly installed on the substrate; the power amplifier chip is integrated with a high-frequency power amplifier, a medium-frequency power amplifier, a low-frequency power amplifier and a bias circuit. The radio frequency module can reduce the area occupied by the chip on the substrate, so that the utilization rate of the substrate is higher, and the interference between different signal lines is reduced, the signal transmission quality is improved, and no additional loss is caused.

Description

Technical Field

[0001] This invention relates to the field of wireless communication technology, and more particularly to a radio frequency module. Background Technology

[0002] With the continuous iteration of radio frequency technology, radio frequency circuits are gradually becoming modular and highly integrated. Radio frequency modules adopt the form of system-in-package, which means interconnecting and packaging chips with different semiconductor processes on a single substrate.

[0003] Due to pin definition limitations, existing RF modules of the same type all include a high-frequency power amplifier chip, an intermediate-frequency power amplifier chip, a low-frequency power amplifier chip, a high-frequency switch chip, an intermediate-frequency switch chip, a low-frequency switch chip, and a control chip integrated on a substrate.

[0004] Due to the limited area of ​​the substrate, the trace area is limited when seven chips are laid out, which will cause some interference between signals and cause additional losses. Summary of the Invention

[0005] To address the shortcomings of the existing technologies, this invention proposes a radio frequency (RF) module that solves the problems of limited trace area, signal interference, and additional losses in the layout of seven chips in existing RF modules.

[0006] To address the aforementioned technical problems, this invention provides an RF module comprising a power amplifier chip, a high-frequency switching circuit, an intermediate-frequency switching circuit, a low-frequency switching circuit, a control unit, a substrate, a high-frequency signal input terminal, an intermediate-frequency signal input terminal, a low-frequency signal input terminal, a power supply voltage terminal, a high-frequency signal receiving terminal, a high-frequency signal output terminal, an intermediate-frequency signal output terminal, and a low-frequency signal output terminal; the power amplifier chip, the high-frequency switching circuit, the intermediate-frequency switching circuit, the low-frequency switching circuit, and the control unit are all fixedly mounted on the substrate.

[0007] The first input terminal of the power amplifier chip is used to connect to the operating voltage. The second input terminal of the power amplifier chip is connected to the high-frequency signal input terminal. The third input terminal of the power amplifier chip is connected to the intermediate-frequency signal input terminal. The fourth input terminal of the power amplifier chip is connected to the low-frequency signal input terminal. The fifth input terminal of the power amplifier chip is connected to the power supply voltage terminal. The power amplifier chip integrates a high-frequency power amplifier, an intermediate-frequency power amplifier, a low-frequency power amplifier, and a bias circuit. The bias circuit is used to provide bias signals to the high-frequency power amplifier, the intermediate-frequency power amplifier, and the low-frequency power amplifier, respectively.

[0008] The first input terminal of the high-frequency switching circuit is connected to the first output terminal of the power amplifier chip, the second input terminal of the high-frequency switching circuit is connected to the high-frequency signal receiving terminal, and the output terminal of the high-frequency switching circuit is connected to the high-frequency signal output terminal.

[0009] The input terminal of the intermediate frequency switching circuit is connected to the second output terminal of the power amplifier chip, and the output terminal of the intermediate frequency switching circuit is connected to the intermediate frequency signal output terminal.

[0010] The input terminal of the low-frequency switching circuit is connected to the third output terminal of the power amplifier chip, and the output terminal of the low-frequency switching circuit is connected to the low-frequency signal output terminal respectively.

[0011] The first input terminal of the control unit is used to connect to the power supply voltage, the second input terminal of the control unit is used to connect to the voltage signal, the third input terminal of the control unit is used to connect to the clock signal, the fourth input terminal of the control unit is used to connect to the digital signal, and the output terminal of the control unit is connected to the bias circuit.

[0012] The control unit is used to provide a bias signal for the bias circuit, to control the output terminal of the high-frequency switching circuit to be connected to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip, to control the input terminal of the intermediate frequency switching circuit to be connected to any one of the output terminals of the intermediate frequency switching circuit, and to control the input terminal of the low-frequency switching circuit to be connected to any one of the output terminals of the low-frequency switching circuit.

[0013] Preferably, the control unit includes a signal control circuit and a switch control circuit;

[0014] The first input terminal of the signal control circuit serves as the first input terminal of the control unit, the second input terminal of the signal control circuit serves as the second input terminal of the control unit, the third input terminal of the signal control circuit serves as the third input terminal of the control unit, the fourth input terminal of the signal control circuit serves as the fourth input terminal of the control unit, and the first output terminal of the signal control circuit serves as the first output terminal of the control unit; the signal control circuit is used to provide a bias signal for the bias circuit, to control the output terminal of the high-frequency switching circuit to connect to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip, and to issue a command signal;

[0015] The input terminal of the switch control circuit is connected to the second output terminal of the signal control circuit. The output terminal of the switch control circuit serves as the second output terminal of the control unit. It is used to control the input terminal of the intermediate frequency switch circuit to connect to any one of the output terminals of the intermediate frequency switch circuit according to the command signal issued by the signal control circuit, and to control the input terminal of the low frequency switch circuit to connect to any one of the output terminals of the low frequency switch circuit.

[0016] The high-frequency switching circuit and the signal control circuit are integrated into a first control chip using SOI technology; the intermediate-frequency switching circuit, the low-frequency switching circuit, and the switching control circuit are integrated into a second control chip.

[0017] Preferably, the signal control circuit is closer to the bias circuit than the high-frequency switching circuit; the switch control circuit is closer to the signal control circuit than the intermediate-frequency switching circuit and the low-frequency switching circuit.

[0018] Preferably, the mounting area of ​​the signal control circuit is shielded from the mounting area of ​​the high-frequency switching circuit by a grounded first metal component; the switching control circuit is shielded from the mounting areas of the intermediate-frequency switching circuit and the low-frequency switching circuit by a grounded second metal component.

[0019] Preferably, the high-frequency signal input terminal, the intermediate-frequency signal input terminal, the low-frequency signal input terminal, and the power supply voltage terminal are respectively disposed on one side edge of the substrate and spaced apart from each other; the power amplifier chip is disposed on the substrate in a region closer to the high-frequency signal input terminal, relative to the high-frequency switching circuit, the intermediate-frequency switching circuit, the low-frequency switching circuit, and the control unit.

[0020] Preferably, the high-frequency signal receiving end and the high-frequency signal output end are respectively disposed on the edge of the other side of the substrate and are spaced apart from each other; the high-frequency switching circuit is disposed on the substrate in a region closer to the high-frequency signal receiving end, relative to the power amplifier chip, the intermediate frequency switching circuit, the low-frequency switching circuit and the control unit.

[0021] Preferably, the intermediate frequency signal output terminal and the low frequency signal output terminal are respectively disposed on the edges of adjacent sides of the substrate; the intermediate frequency switching circuit is disposed on the substrate in a region closer to the intermediate frequency signal output terminal relative to the power amplifier chip, the high frequency switching circuit, the low frequency switching circuit, and the control unit, and the low frequency switching circuit is disposed on the substrate in a region closer to the low frequency signal output terminal relative to the power amplifier chip, the high frequency switching circuit, the intermediate frequency switching circuit, and the control unit.

[0022] Preferably, the high-frequency switching circuit, the intermediate-frequency switching circuit, the low-frequency switching circuit, and the control unit are integrated into a third control chip using SOI technology.

[0023] Preferably, the control unit is located in the central region of the third control chip and is closer to the bias circuit than the high-frequency switching circuit, the intermediate-frequency switching circuit, and the low-frequency switching circuit.

[0024] Preferably, the mounting area of ​​the control unit is shielded from the mounting areas of the high-frequency switching circuit, the intermediate-frequency switching circuit, and the low-frequency switching circuit by a grounded third metal component.

[0025] Compared with the prior art, the radio frequency module in this invention integrates a high-frequency power amplifier, an intermediate-frequency power amplifier, and a low-frequency power amplifier into a single chip, thereby compressing the original seven chips into five chips. This reduces the area occupied by the chips on the substrate, resulting in higher substrate utilization, reduced interference between different signal lines, improved signal transmission quality, and no additional losses. Attached Figure Description

[0026] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0027] Figure 1 This is a circuit diagram of the radio frequency module provided in Embodiment 1 of the present invention;

[0028] Figure 2 The circuit diagram of the radio frequency module provided in Embodiment 2 of the present invention. Detailed Implementation

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0030] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] Example 1

[0033] This invention provides a radio frequency module 100, combined with... Figure 1 As shown, it includes a power amplifier chip 1, a high-frequency switching circuit 2, an intermediate-frequency switching circuit 3, a low-frequency switching circuit 4, a control unit 5, a substrate 6, a high-frequency signal input terminal RFIN_H, an intermediate-frequency signal input terminal RFIN_M, a low-frequency signal input terminal RFIN_L, a power supply voltage terminal VBATT, a high-frequency signal receiving terminal, a high-frequency signal output terminal, an intermediate-frequency signal output terminal, and a low-frequency signal output terminal.

[0034] Among them, the power amplifier chip 1, the high-frequency switching circuit 2, the intermediate frequency switching circuit 3, the low-frequency switching circuit 4, and the control unit 5 are all fixedly mounted on the substrate 6; the high-frequency signal input terminal RFIN_H, the intermediate frequency signal input terminal RFIN_M, the low-frequency signal input terminal RFIN_L, the power supply voltage terminal VBATT, the high-frequency signal receiving terminal, the high-frequency signal output terminal, the intermediate frequency signal output terminal, and the low-frequency signal output terminal are all located in the edge area of ​​the substrate 6 and are spaced apart from each other.

[0035] The first input terminal of power amplifier chip 1 is used to connect to the operating voltage. The second input terminal of power amplifier chip 1 is connected to the high-frequency signal input terminal RFIN_H. The third input terminal of power amplifier chip 1 is connected to the intermediate frequency signal input terminal RFIN_M. The fourth input terminal of power amplifier chip 1 is connected to the low-frequency signal input terminal RFIN_L. The fifth input terminal of power amplifier chip 1 is connected to the power supply voltage terminal VBATT. Power amplifier chip 1 integrates a high-frequency power amplifier 11, an intermediate frequency power amplifier 12, a low-frequency power amplifier 13, and a bias circuit 14. The bias circuit 14 is used to provide bias signals to the high-frequency power amplifier 11, the intermediate frequency power amplifier 12, and the low-frequency power amplifier 13, respectively. Figure 1As shown, the first input terminal of the power amplifier chip 1 is connected to two operating voltages, namely VCC1 and VCC2.

[0036] The bias circuit 14 is a shared bias circuit for the high-frequency power amplifier 11, the intermediate-frequency power amplifier 12, and the low-frequency power amplifier 13, and provides a bias signal of bias voltage or bias current. In the prior art, the circuits used to provide bias voltage or current are respectively integrated into the high-frequency power amplifier chip 1, the intermediate-frequency power amplifier chip 1, and the low-frequency power amplifier chip 1.

[0037] The power supply voltage terminal VBATT provides voltage to the high-frequency power amplifier 11, the intermediate-frequency power amplifier 12, and the low-frequency power amplifier 13 respectively. This is equivalent to the voltage traces of the high-frequency power amplifier 11, the intermediate-frequency power amplifier 12, and the low-frequency power amplifier 13 being combined into one path and connected to the power supply voltage terminal VBATT.

[0038] The high-frequency signal input terminal RFIN_H, the intermediate-frequency signal input terminal RFIN_M, the low-frequency signal input terminal RFIN_L, and the power supply voltage terminal VBATT are respectively disposed on the periphery of one side of the substrate 6 and are spaced apart from each other; the power amplifier chip 1 is disposed on the substrate 6 in a region closer to the high-frequency signal input terminal RFIN_H, relative to the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, the low-frequency switching circuit 4, and the control unit 5.

[0039] The design of the power amplifier chip 1 can simplify the wiring of the substrate 6, reduce the interference between radio frequency signals and DC signals, and reduce the area occupied by the power amplifier chip 1 on the substrate 6.

[0040] The first input terminal of the high-frequency switching circuit 2 is connected to the first output terminal of the power amplifier chip 1, the second input terminal of the high-frequency switching circuit 2 is connected to the high-frequency signal receiving terminal, and the output terminal of the high-frequency switching circuit 2 is connected to the high-frequency signal output terminal.

[0041] The input terminal of the intermediate frequency switching circuit 3 is connected to the second output terminal of the power amplifier chip 1, and the output terminal of the intermediate frequency switching circuit 3 is connected to the intermediate frequency signal output terminal.

[0042] The input terminal of the low-frequency switching circuit 4 is connected to the third output terminal of the power amplifier chip 1, and the output terminal of the low-frequency switching circuit 4 is connected to the low-frequency signal output terminal.

[0043] The first input terminal of the control unit 5 is used to connect the power supply voltage VBATT1, the second input terminal of the control unit 5 is used to connect the voltage signal VIO, the third input terminal of the control unit is used to connect the clock signal SCLK, the fourth input terminal of the control unit is used to connect the digital signal SDATA, and the output terminal of the control unit is connected to the bias circuit 14.

[0044] The control unit 5 is used to provide a bias signal to the bias circuit 14, to control the output terminal of the high-frequency switching circuit 2 to be connected to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip 1, to control the input terminal of the intermediate frequency switching circuit 3 to be connected to any one of the output terminals of the intermediate frequency switching circuit 3, and to control the input terminal of the low-frequency switching circuit 4 to be connected to any one of the output terminals of the low-frequency switching circuit 4.

[0045] In this embodiment, the control unit 5 includes a signal control circuit 51 and a switch control circuit 52.

[0046] The first input terminal of the signal control circuit 51 serves as the first input terminal of the control unit 5, the second input terminal of the signal control circuit 51 serves as the second input terminal of the control unit 5, the third input terminal of the signal control circuit 51 serves as the third input terminal of the control unit 5, the fourth input terminal of the signal control circuit 51 serves as the fourth input terminal of the control unit 5, and the first output terminal of the signal control circuit 51 serves as the first output terminal of the control unit 5.

[0047] The signal control circuit 51 is used to provide a bias signal to the bias circuit 14, to control the output terminal of the high-frequency switching circuit 2 to be connected to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip 1, and to issue a command signal.

[0048] The input terminal of the switch control circuit 52 is connected to the second output terminal of the signal control circuit 51. The output terminal of the switch control circuit 52 serves as the second output terminal of the control unit 5. It is used to control the input terminal of the intermediate frequency switch circuit 3 to connect to any one of the output terminals of the intermediate frequency switch circuit 3, and to control the input terminal of the low frequency switch circuit 4 to connect to any one of the output terminals of the low frequency switch circuit 4, according to the command signal issued by the signal control circuit 51.

[0049] The high-frequency switching circuit 2 and the signal control circuit 51 are integrated with a first control chip 20 using SOI technology. The signal control circuit 51 is a control chip in the prior art, which generally uses CMOS technology, while the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, and the low-frequency switching circuit 4 use SOI technology. In this embodiment, SOI technology is used for both the high-frequency switching circuit 2 and the signal control circuit 51. The intermediate-frequency switching circuit 3, the low-frequency switching circuit 4, and the switch control circuit 52 are integrated into a second control chip 30.

[0050] The high-frequency signal receiving end and the high-frequency signal output end are respectively located on one edge of the substrate 6 and are spaced apart from each other; the high-frequency switching circuit 2 is located in the area of ​​the substrate 6 closer to the high-frequency signal receiving end, relative to the power amplifier chip 1, the intermediate frequency switching circuit 3, the low-frequency switching circuit 4, and the control unit 5. This design can save on wiring.

[0051] The high-frequency signal receiving end includes two, denoted as HBRX1 and HBRX2 respectively; the high-frequency signal output end includes four, denoted as HB1, HB2, HB3 and HB4 respectively, which are selected to be connected to the high-frequency signal receiving end or the first output end of the power amplifier chip 1 by a single-pole double-throw switch.

[0052] The intermediate frequency (IF) signal output terminal and the low-frequency (LFM) signal output terminal are respectively located on the adjacent edges of the substrate 6. The IF switching circuit 3 is located in the area of ​​the substrate 6 closer to the IF signal output terminal than the power amplifier chip 1, the high-frequency switching circuit 2, the LFM switching circuit 4, and the control unit 5. The LFM switching circuit 4 is located in the area of ​​the substrate 6 closer to the LFM signal output terminal than the power amplifier chip 1, the high-frequency switching circuit 2, the IF switching circuit 3, and the control unit 5. This design saves on wiring and avoids signal interference.

[0053] The intermediate frequency (IF) signal output terminals include five, denoted by MB1, MB2, MB3, MB4, and MB5 respectively. The input terminal of the IF switching circuit 3 is connected to any one of the output terminals of the IF switching circuit 3 via a single-pole five-throw switch, i.e., connected to any one of the IF signal output terminals. The low-frequency (LFM) signal output terminals include five, denoted by LB1, LB2, LB3, LB4, and LB5 respectively. The input terminal of the low-frequency switching circuit 4 is connected to any one of the output terminals of the low-frequency switching circuit 4 via a single-pole five-throw switch, i.e., connected to any one of the LFM signal output terminals.

[0054] The signal control circuit 51 is located closer to the bias circuit 14 than the high-frequency switching circuit 2. This design saves on wiring.

[0055] The first output terminal of the signal control circuit 51 includes three terminals, which are used to provide a bias signal Bias_H for the high-frequency power amplifier 11, a bias signal Bias_M for the intermediate-frequency power amplifier 12, and a bias signal Bias_L for the low-frequency power amplifier 13, respectively.

[0056] In terms of layout, since the signal control circuit 51 is mainly composed of analog and digital circuits, it needs to be distinguished from the high-frequency switching circuit 2, that is, it needs to be distinguished from other circuits or modules besides the signal control circuit 51. Therefore, in this embodiment, the mounting area of ​​the signal control circuit 51 is shielded from the mounting area of ​​the high-frequency switching circuit 2 by a grounded first metal piece 511.

[0057] The switch control circuit 52 is located closer to the signal control circuit 51 than the intermediate frequency switch circuit 3 and the low frequency switch circuit 4. This design saves on wiring.

[0058] Since the intermediate frequency switching circuit 3 and the low frequency switching circuit 4 require a portion of the circuitry to control the switching on and off, a switch control circuit 52 needs to be designed. The switch control circuit 52 mainly consists of analog and digital circuits; therefore, it needs to be distinguished from the intermediate frequency switching circuit 3 and the low frequency switching circuit 4, and also from other circuits or modules besides the switch control circuit 52. Therefore, in this embodiment, the switch control circuit 52 is shielded from the mounting areas of the intermediate frequency switching circuit 3 and the low frequency switching circuit 4 respectively by a grounded second metal component 521.

[0059] Compared with the prior art, the RF module 100 in this embodiment integrates the high-frequency power amplifier 11, the intermediate-frequency power amplifier 12, and the low-frequency power amplifier 13 into one chip, the high-frequency switching circuit 2 and the signal control circuit 51 into one chip, and the intermediate-frequency switching circuit 3, the low-frequency switching circuit 4, and the switch control circuit 52 into one chip. This reduces the original seven chips to three chips, thereby reducing the area occupied by the chips on the substrate 6, making the substrate 6 more efficient, reducing interference between different signal lines, improving signal transmission quality, and without causing additional losses.

[0060] Example 2

[0061] The difference between the RF module 200 in this embodiment and that in embodiment one is that it combines... Figure 2 As shown, the high-frequency switching circuit 2, the medium-frequency switching circuit 3, the low-frequency switching circuit 4, and the control unit 5 are integrated into a third control chip 210 using SOI technology; at the same time, the control unit 5 is a control chip with a control circuit.

[0062] The control unit 5 is located in the middle region of the third control chip 210 and is closer to the bias circuit 14 than the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, and the low-frequency switching circuit 4. This design saves wiring and facilitates the control unit 5 in controlling the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, and the low-frequency switching circuit 4.

[0063] In terms of layout, since the control unit mainly consists of analog and digital circuits, it needs to be separated from the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, and the low-frequency switching circuit 4, respectively. In other words, it needs to be separated from circuits or modules other than the control unit 5. Therefore, in this embodiment, the mounting area of ​​the control unit 5 is shielded from the mounting areas of the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, and the low-frequency switching circuit 4 by a grounded third metal component 501.

[0064] This embodiment integrates the high-frequency switching circuit 2, the intermediate-frequency switching circuit 3, the low-frequency switching circuit 4, and the control unit 5 into a single chip, thereby further reducing the area occupied by the chip on the substrate 6 by compressing the three chips in the first embodiment into two chips. This results in a higher utilization rate of the substrate 6, thereby reducing interference between different signal lines, improving signal transmission quality, and avoiding additional losses.

[0065] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that any modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A radio frequency module, characterized in that, The radio frequency module includes a power amplifier chip, a high-frequency switching circuit, an intermediate-frequency switching circuit, a low-frequency switching circuit, a control unit, a substrate, a high-frequency signal input terminal, an intermediate-frequency signal input terminal, a low-frequency signal input terminal, a power supply voltage terminal, a high-frequency signal receiving terminal, a high-frequency signal output terminal, an intermediate-frequency signal output terminal, and a low-frequency signal output terminal; the power amplifier chip, the high-frequency switching circuit, the intermediate-frequency switching circuit, the low-frequency switching circuit, and the control unit are all fixedly mounted on the substrate; The first input terminal of the power amplifier chip is used to connect to the operating voltage. The second input terminal of the power amplifier chip is connected to the high-frequency signal input terminal. The third input terminal of the power amplifier chip is connected to the intermediate-frequency signal input terminal. The fourth input terminal of the power amplifier chip is connected to the low-frequency signal input terminal. The fifth input terminal of the power amplifier chip is connected to the power supply voltage terminal. The power amplifier chip integrates a high-frequency power amplifier, an intermediate-frequency power amplifier, a low-frequency power amplifier, and a bias circuit. The bias circuit is used to provide bias signals to the high-frequency power amplifier, the intermediate-frequency power amplifier, and the low-frequency power amplifier, respectively. The first input terminal of the high-frequency switching circuit is connected to the first output terminal of the power amplifier chip, the second input terminal of the high-frequency switching circuit is connected to the high-frequency signal receiving terminal, and the output terminal of the high-frequency switching circuit is connected to the high-frequency signal output terminal. The input terminal of the intermediate frequency switching circuit is connected to the second output terminal of the power amplifier chip, and the output terminal of the intermediate frequency switching circuit is connected to the intermediate frequency signal output terminal. The input terminal of the low-frequency switching circuit is connected to the third output terminal of the power amplifier chip, and the output terminal of the low-frequency switching circuit is connected to the low-frequency signal output terminal respectively. The first input terminal of the control unit is used to connect to the power supply voltage, the second input terminal of the control unit is used to connect to the voltage signal, the third input terminal of the control unit is used to connect to the clock signal, the fourth input terminal of the control unit is used to connect to the digital signal, and the output terminal of the control unit is connected to the bias circuit. The control unit is used to provide a bias signal for the bias circuit, to control the output terminal of the high-frequency switching circuit to be connected to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip, to control the input terminal of the intermediate frequency switching circuit to be connected to any one of the output terminals of the intermediate frequency switching circuit, and to control the input terminal of the low-frequency switching circuit to be connected to any one of the output terminals of the low-frequency switching circuit.

2. The radio frequency module as described in claim 1, characterized in that, The control unit includes a signal control circuit and a switch control circuit; The first input terminal of the signal control circuit serves as the first input terminal of the control unit, the second input terminal of the signal control circuit serves as the second input terminal of the control unit, the third input terminal of the signal control circuit serves as the third input terminal of the control unit, the fourth input terminal of the signal control circuit serves as the fourth input terminal of the control unit, and the first output terminal of the signal control circuit serves as the first output terminal of the control unit; the signal control circuit is used to provide a bias signal for the bias circuit, to control the output terminal of the high-frequency switching circuit to connect to the high-frequency signal receiving terminal or the first output terminal of the power amplifier chip, and to issue a command signal; The input terminal of the switch control circuit is connected to the second output terminal of the signal control circuit. The output terminal of the switch control circuit serves as the second output terminal of the control unit. It is used to control the input terminal of the intermediate frequency switch circuit to connect to any one of the output terminals of the intermediate frequency switch circuit according to the command signal issued by the signal control circuit, and to control the input terminal of the low frequency switch circuit to connect to any one of the output terminals of the low frequency switch circuit. The high-frequency switching circuit and the signal control circuit are integrated into a first control chip using SOI technology; the intermediate-frequency switching circuit, the low-frequency switching circuit, and the switching control circuit are integrated into a second control chip.

3. The radio frequency module as described in claim 2, characterized in that, The signal control circuit is closer to the bias circuit than the high-frequency switching circuit; the switch control circuit is closer to the signal control circuit than the intermediate-frequency switching circuit and the low-frequency switching circuit.

4. The radio frequency module as described in claim 2, characterized in that, The mounting area of ​​the signal control circuit is shielded from the mounting area of ​​the high-frequency switching circuit by a grounded first metal component; the switching control circuit is shielded from the mounting areas of the intermediate-frequency switching circuit and the low-frequency switching circuit by a grounded second metal component.

5. The radio frequency module as described in claim 1, characterized in that, The high-frequency signal input terminal, the intermediate-frequency signal input terminal, the low-frequency signal input terminal, and the power supply voltage terminal are respectively disposed on one side edge of the substrate and spaced apart from each other; the power amplifier chip is disposed on the substrate in a region closer to the high-frequency signal input terminal, relative to the high-frequency switching circuit, the intermediate-frequency switching circuit, the low-frequency switching circuit, and the control unit.

6. The radio frequency module as described in claim 5, characterized in that, The high-frequency signal receiving end and the high-frequency signal output end are respectively disposed on the other edge of the substrate and are spaced apart from each other; the high-frequency switching circuit is disposed on the substrate closer to the high-frequency signal receiving end, relative to the power amplifier chip, the intermediate frequency switching circuit, the low-frequency switching circuit and the control unit.

7. The radio frequency module as described in claim 1, characterized in that, The intermediate frequency signal output terminal and the low frequency signal output terminal are respectively disposed on the edges of adjacent sides of the substrate; the intermediate frequency switching circuit is disposed on the substrate closer to the intermediate frequency signal output terminal relative to the power amplifier chip, the high frequency switching circuit, the low frequency switching circuit and the control unit, and the low frequency switching circuit is disposed on the substrate closer to the low frequency signal output terminal relative to the power amplifier chip, the high frequency switching circuit, the intermediate frequency switching circuit and the control unit.

8. The radio frequency module as described in claim 1, characterized in that, The high-frequency switching circuit, the medium-frequency switching circuit, the low-frequency switching circuit, and the control unit are integrated into a third control chip using SOI technology.

9. The radio frequency module as described in claim 8, characterized in that, The control unit is located in the central region of the third control chip and is closer to the bias circuit than the high-frequency switching circuit, the intermediate-frequency switching circuit, and the low-frequency switching circuit.

10. The radio frequency module as described in claim 8, characterized in that, The mounting area of ​​the control unit is shielded from the mounting areas of the high-frequency switching circuit, the intermediate-frequency switching circuit, and the low-frequency switching circuit by a grounded third metal component.

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