Wafer cleaning fluid blending system

Abstract

The invention belongs to the technical field of wafer cleaning, and particularly relates to a wafer cleaning liquid blending system which comprises a cabinet body, a containing cavity is formed in the cabinet body, a blending box is arranged in the containing cavity, a mixing cavity is formed in the blending box and used for blending and mixing all raw materials, and the blending box internally comprises a raw material pipe, a water inlet pipe and a water outlet pipe. The plurality of raw material pipes are inserted into the mixing cavity and are used for conveying different raw materials; the multiple high-pressure sprayers are movably connected to the lower portion of the raw material pipe, and when the flow speed of the raw materials is increased, the high-pressure sprayers incline upwards, and the distance between the high-pressure sprayers and the inner wall of the mixing cavity is increased; the curved surface is arranged at the end corner of one side, close to the high-pressure spray head, of the mixing cavity; according to the wafer cleaning fluid blending system, all the structures are matched with one another to jointly achieve the mixing and blending effect on the wafer cleaning fluid, the blending efficiency is high, the mixing effect is good, the actual production blending requirement is met, and the follow-up cleaning fluid quality and the wafer cleaning effect are guaranteed.

Description

Technical Field

[0001] The invention belongs to the technical field of wafer cleaning, and in particular relates to a wafer cleaning liquid mixing system. Background Art

[0002] With the rapid development of the semiconductor industry, the requirements for the cleaning process in wafer manufacturing are becoming increasingly stringent. During the wafer manufacturing process, the cleaning process runs through the entire process, aiming to remove impurities on the wafer surface, ensure the smooth progress of subsequent processes and high-quality output of wafers, and the wafer cleaning fluid requires a variety of raw materials to be mixed according to the required proportions.

[0003] Chinese invention patent application CN116598231A provides an independent wafer cleaning liquid supply device, which at least includes: a liquid supply module, configured to provide cleaning liquid; a liquid filtration module, configured to filter the cleaning liquid provided by the liquid supply module; the wafer cleaning liquid mixing system has low mixing efficiency and poor mixing effect.

[0004] Chinese invention patent application CN115020269A discloses a wafer cleaning device and a cleaning liquid supply device thereof, comprising: a mixing tank, wherein the mixing tank is divided into M overflow tank areas and supply tank areas adjacent to each other in sequence, and the tank opening heights of the M overflow tank areas and the supply tank areas decrease successively in the direction approaching the supply tank area; the wafer cleaning liquid supply device is difficult to operate and has low operating accuracy.

[0005] In the above-mentioned wafer cleaning liquid mixing system, the liquid level value of the cleaning liquid is often monitored in real time with the help of a liquid level sensor. However, if the raw materials continue to flow vertically downward inside the mixing box and prepare the cleaning liquid, the collision between the raw materials and the liquid surface of the cleaning liquid will cause the liquid level of the cleaning liquid to fluctuate. At the same time, the raw materials are prone to generate bubbles during the flow impact. The liquid level fluctuation and bubbles will not only reduce the quality of the cleaning liquid, but will also affect the liquid level detection accuracy of the liquid level sensor.

[0006] In addition, when the high-pressure nozzle impacts the side wall of the mixing box for a long time, it is easy to cause damage to the side wall structure of the mixing box and the structure of the raw material itself, thereby making it impossible to guarantee the subsequent mixing effect of the cleaning liquid. If the flow rate of the raw material inside the high-pressure nozzle changes, the impact force between the high-pressure nozzle and the inner wall of the mixing box will change accordingly. The bubbles generated when the raw material is blocked and the downward flow will change the fluctuation force of the cleaning liquid, and thus the stability of the liquid surface above the cleaning liquid and the bubble reduction effect cannot be achieved, which ultimately affects the accuracy of the liquid level sensor in detecting the cleaning liquid level.

[0007] At the same time, if the amount of raw materials sprayed out by the high-pressure nozzle changes, the flow rate and flow volume of the raw materials in the cleaning liquid will change accordingly, which may easily cause some raw materials to flow arbitrarily in the cleaning liquid and cannot be fully mixed and modulated, ultimately reducing the quality of subsequent cleaning liquid.

[0008] When the density of the raw materials changes, the raw materials accumulate and settle in different positions inside the cleaning liquid, which makes it impossible for the raw materials to be fully mixed and affects the mixing effect of the cleaning liquid. After the mixing is completed, the impurities in the raw materials are easily accumulated inside the mixing box and will affect the subsequent mixing and preparation of the raw materials. Summary of the Invention

[0009] In response to the above problems, the present invention provides a wafer cleaning liquid mixing system.

[0010] To achieve the above-mentioned object, the present invention provides the following technical solution: a wafer cleaning liquid preparation system, comprising a cabinet, a placement cavity is provided inside the cabinet, a preparation box is provided inside the placement cavity, a mixing cavity is provided inside the preparation box for preparing and mixing various raw materials, and the preparation box includes: Raw material pipes, multiple of which are inserted into the mixing chamber and transport different raw materials; High-pressure nozzles, multiple high-pressure nozzles are movably connected to the bottom of the raw material pipe. When the raw material flow rate increases, the high-pressure nozzles tilt upward and the distance between them and the inner wall of the mixing chamber increases; A curved surface is provided at an end corner of the mixing chamber near the high-pressure nozzle, and the raw material flows downward along the side wall of the mixing chamber and enters the interior of the mixing chamber under the guidance of the curved surface; Elastic guide pieces, multiple elastic guide pieces are movably connected to the inner wall of the mixing chamber away from the curved surface. When the high-pressure nozzle is tilted upward, the distance between the elastic guide piece and the curved surface is reduced and the guidance range of the raw material to both sides is increased.

[0011] The various structures in the wafer cleaning liquid mixing system cooperate with each other to achieve the mixing and mixing of the wafer cleaning liquid. The mixing efficiency is high and the mixing effect is good, which meets the actual production mixing needs, ensures the quality of the subsequent cleaning liquid and the cleaning effect on the wafer, and can also adjust the inclination angle of the high-pressure nozzle according to the flow value of the raw material inside the raw material pipe detected by the flow meter, so as to ensure that the impact force of the high-pressure nozzle on the side wall of the mixing chamber remains stable. At the same time, the raw materials continue to flow downward along the curved surface and mix inside the mixing chamber. The larger the inclination angle of the high-pressure nozzle, the smaller the distance between the elastic guide sheet and the curved surface, and the various raw materials are dispersed, guided and mixed inside the mixing chamber, further improving the raw material mixing and mixing effect.

[0012] Preferably, the mixing box further includes: Flow meters, multiple of which are arranged inside the raw material pipe and above the mixing box, and are used to detect the raw material flow value inside the raw material pipe; Feed solenoid valves, wherein a plurality of the feed solenoid valves are arranged inside the raw material pipe and above the flow meter, and the feed solenoid valves adjust the raw material flow value inside the raw material pipe; Liquid level sensors, multiple of which are fixedly connected to the top of the mixing chamber and detect the liquid level value inside the mixing chamber.

[0013] Preferably, the mixing box further includes: a first telescopic portion, one end of which is movably connected to the side wall of the raw material pipe, and the other end of which is movably connected to the upper portion of the high-pressure nozzle; an output end of the first telescopic portion is shortened and drives the high-pressure nozzle to increase its upward tilt angle; A rotating shaft, wherein the rotating shaft is movably connected to the lower portion of the raw material pipe, and the other end of the rotating shaft is fixedly connected to the end of the high-pressure nozzle; A drainage tube, one end of which passes through the raw material tube and is connected to the interior thereof, and the other end of which passes through the high-pressure nozzle and is connected to the interior thereof. The drainage tube is flexible, and the raw material inside the raw material tube enters the high-pressure nozzle along the drainage tube and is discharged toward the side wall of the mixing chamber.

[0014] Preferably, the mixing box further includes: A second telescopic portion, wherein a plurality of the second telescopic portions are fixedly connected to the inner wall of the mixing chamber, and two second telescopic portions are provided in the same vertical direction; A tapered rod, the side wall of which is movably connected to the output end of the second telescopic part, the end of the tapered rod close to the curved surface is a tapered structure, the end of the tapered rod is in squeeze contact with the inner wall of the elastic guide piece, when the output end of the second telescopic part is extended and the elastic guide piece is elastically deformed toward the end close to the curved surface through the tapered rod Preferably, the curved surface is smooth and is connected to the side wall and inner bottom of the mixing chamber in an arc shape. The curved surface guides the raw materials flowing vertically downward from the inner wall of the mixing chamber to flow horizontally along the inner bottom of the mixing chamber. The elastic guide sheet is elastic and the lower part matches the inner bottom of the mixing chamber, and the upper part of the elastic guide sheet corresponds to the upper part of the curved surface. The second telescopic part and the tapered rod are both located inside the elastic guide sheet, and the end of the elastic guide sheet is fixedly connected to the side wall of the mixing chamber away from the curved surface.

[0015] Preferably, the horizontal distances between the multiple raw material pipes and the side wall of the mixing chamber are equal, and the end of the high-pressure nozzle corresponds to the side wall of the mixing chamber. The side wall of the mixing chamber is provided with an impact-resistant layer and matches the rotation angle of the high-pressure nozzle. The positions of the multiple high-pressure nozzles correspond to the position of the conical rod, and the range of movement of the high-pressure nozzle is to rotate obliquely upward in the horizontal direction.

[0016] Preferably, it also includes: A protection box, wherein the mixing box is located inside the protection box, and a heating portion is provided inside the protection box and on the outer surface of the mixing box to heat the raw materials inside the mixing chamber; A fixing platform, one side of which is fixedly connected to the inner wall of the placement cavity, and the bottom of the protection box is fixedly connected to the top of the fixing platform; The pump body is fixedly connected to the bottom of the placement cavity, the input end of the pump body is provided with a bottom pipe, the bottom of the mixing cavity is provided with a splicing hole, and the other end of the bottom pipe passes through the fixing platform and the protection box and is connected to the bottom of the splicing hole.

[0017] Preferably, it further comprises: a mounting frame, the mounting frame being fixedly connected to the inner wall of the placement cavity, an electric control box being provided on the top of the mounting frame, and the electric control box supplying power to each electrical component; A numerical control screen is fixedly mounted on one side of the cabinet and is electrically connected to various electrical components; An emergency button is fixedly connected to one side of the cabinet, and the emergency button electrically controls the system switch.

[0018] Preferably, it also includes: A filter, the filter being fixedly connected to the bottom of the fixing platform, the input end of the filter being connected to the output end of the pump body through a connecting pipe, and the output end of the filter being connected to the input end of the wafer cleaning equipment through a liquid outlet pipe; A collecting box is fixedly connected to the bottom of the placement chamber, the top of the collecting box is connected to a return pipe, the bottom of the mixing chamber is provided with a discharge hole, and the other end of the return pipe passes through the fixing platform and the protection box and is connected to the bottom of the discharge hole; A discharge solenoid valve is installed on the inner wall of the bottom pipe and the return pipe and adjusts the internal liquid flow value.

[0019] Compared with the prior art, the present invention has the following beneficial effects: 1. In the present invention, the inclination angle of the high-pressure nozzle is adjusted according to the flow rate of the raw material inside the raw material pipe to ensure that the impact force of the raw material sprayed from the high-pressure nozzle meets the requirements when it reaches the side wall of the mixing chamber, thereby avoiding high impact of the raw material on the side wall of the mixing chamber and causing damage to the side wall of the mixing chamber and the raw material structure itself.

[0020] 2. In the present invention, as the amount of raw materials increases, the area of ​​the raw materials flowing vertically downward along the side wall of the mixing chamber becomes larger, thereby ensuring that the raw materials can reach the curved surface end evenly and stably and be guided to flow horizontally, thereby preventing a large amount of raw materials from entering the cleaning liquid and causing fluctuations in the upper liquid surface. In addition, the impact force between the raw materials and the cleaning liquid is reduced, and the generation of a large number of bubbles is avoided, thereby improving the detection accuracy of the liquid level sensor for the liquid level.

[0021] 3. In the present invention, the distance between the elastic guide sheet and the curved surface decreases accordingly as the amount of raw materials increases, thereby ensuring that the raw materials flow in the horizontal left-right direction to the horizontal front-back direction under the guidance of the elastic guide sheet, further improving the mixing and blending effect of each raw material, and avoiding the long-term accumulation and precipitation of raw materials and affecting the mixing and blending effect.

[0022] 4. In the present invention, the inclination angle of the elastic guide piece is adjusted accordingly with the change of raw material density, and the inclination angle of the high-pressure nozzle is constantly changing, which effectively improves the uniformity of the distribution of the raw materials in the cleaning liquid and the mixing and deployment effect. At the same time, it can also flush and scrape the inside of the mixing chamber to avoid affecting the subsequent mixing and deployment of raw materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the front view of the three-dimensional structure of the mixing system of the present invention; Figure 2 This is a schematic diagram of the front three-dimensional structure of the mixing box of the present invention; Figure 3 This is a schematic diagram of the three-dimensional structure of the mixing box of the present invention from another perspective; Figure 4 For the present invention Figure 3 A schematic diagram of the internal three-dimensional structure of the middle dispatch box from the rear; Figure 5 For the present invention Figure 3 A schematic diagram of the internal three-dimensional structure of the middle distribution box from the right side; Figure 6 for Figure 5 A in the middle is an enlarged schematic diagram; Figure 7 for Figure 5 The enlarged schematic diagram of point B in the middle; Figure 8 For the present invention Figure 3 a schematic cross-sectional view of the middle mixing box from the right; Figure 9 This is a schematic diagram of the explosion of the high-pressure nozzle position of the present invention; Figure 10 This is an exploded schematic diagram of the position of the elastic guide piece of the present invention.

[0024] In the figure: 1. Cabinet; 2. Placement cavity; 3. Mounting frame; 4. CNC screen; 5. Emergency button; 6. Electric control box; 7. Pump body; 8. Filter; 9. Protection box; 10. Collection box; 11. Bottom pipe; 12. Return pipe; 13. Connecting pipe; 14. Liquid outlet pipe; 15. Blending box; 16. Mixing chamber; 17. Curved surface; 18. Raw material pipe; 19. Flow meter; 20. Feed solenoid valve; 21. Rotating shaft; 22. First telescopic part; 23. High-pressure nozzle; 24. Drainage pipe; 25. Second telescopic part; 26. Conical rod; 27. Elastic guide plate; 28. Liquid level sensor; 29. ​​Splicing hole; 30. Feeding hole; 31. Discharge solenoid valve; 32. Fixing table. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0026] like Figure 1 - Figure 10 As shown, a wafer cleaning liquid preparation system includes a cabinet 1, a placement cavity 2 is opened inside the cabinet 1, and various components of the wafer cleaning liquid preparation system are placed inside the placement cavity 2. A preparation box 15 is provided inside the placement cavity 2, and a mixing cavity 16 is opened inside the preparation box 15 to prepare and mix various raw materials. Different liquid raw materials are prepared inside the mixing cavity 16.

[0027] The mixing box 15 includes: raw material pipes 18, multiple raw material pipes 18 are inserted into the mixing chamber 16 and transport different raw materials; and the end of the raw material pipe 18 away from the mixing chamber 16 is connected to each raw material box through a high-pressure pump. Specifically, the wafer cleaning liquid is mainly SC-1, in which the main raw materials are liquid deionized water, ammonia water and hydrogen peroxide, etc., and the raw materials are used to represent the various liquid components in the following. The high-pressure pump is started and the raw materials in each raw material box are passed into the raw material pipe 18.

[0028] It also includes: a protection box 9, a mixing box 15 located inside the protection box 9, a heating part is provided inside the protection box 9 and on the outer surface of the mixing box 15 to heat the raw materials inside the mixing chamber 16; the protection box 9 not only realizes the wrapping protection of the internal mixing box 15, but the heating part can also adjust the temperature of the raw materials inside the mixing box 15, thereby improving the mixing efficiency and mixing quality of the cleaning liquid, a fixed table 32, one side of the fixed table 32 is fixedly connected to the inner wall of the placement chamber 2, and the bottom of the protection box 9 is fixedly connected to the top of the fixed table 32; the fixed table 32 supports and fixes the protection box 9, a mounting frame 3, the mounting frame 3 is fixedly connected to the inner wall of the placement chamber 2, and an electric control box 6 is provided on the top of the mounting frame 3, which supplies power to each electrical component.

[0029] The cabinet 1 also includes: a numerical control screen 4, which is fixedly installed on one side of the cabinet 1 and is electrically connected to various electrical components; the setting of the numerical control screen 4 facilitates full automatic or manual operation to ensure adjustment accuracy, an emergency button 5, which is fixedly connected to one side of the cabinet 1 and electrically controls the system emergency switch. When an emergency stop is required, pressing the emergency button 5 can stop each electrical component to prevent subsequent work from causing harm. At the same time, one side of the cabinet 1 also includes other numerical control buttons, which are all existing technologies and will not be elaborated here.

[0030] The placement chamber 2 also includes: a pump body 7, which is fixedly connected to the bottom of the placement chamber 2. The pump body 7 has a suction function and can suck and discharge the cleaning liquid inside the mixing chamber 16. The input end of the pump body 7 is provided with a bottom pipe 11, and a splicing hole 29 is opened at the bottom of the mixing chamber 16. The other end of the bottom pipe 11 passes through the fixed platform 32 and the protective box 9 and is connected to the bottom of the splicing hole 29; when the cleaning liquid inside the mixing chamber 16 is prepared, the pump body 7 starts and applies suction force to the bottom pipe 11, and the cleaning liquid inside the mixing chamber 16 enters the bottom pipe 11 along the splicing hole 29, and finally flows into the pump body 7 along the bottom pipe 11.

[0031] Filter 8, filter 8 is fixedly connected to the bottom of the fixed platform 32. Filter 8 mainly performs the final filtration of the cleaning liquid to avoid the presence of impurities in the cleaning liquid that reduce the subsequent cleaning effect on the wafer. The input end of the filter 8 is connected to the output end of the pump body 7 through the connecting pipe 13, and the output end of the filter 8 is connected to the input end of the wafer cleaning equipment through the liquid outlet pipe 14; the pump body 7 works continuously and sends the cleaning liquid along the connecting pipe 13 into the inside of the filter 8. At the same time, under the filtering action of the filter 8, the impurities in the cleaning liquid are filtered, and finally the cleaning liquid reaches the end of the wafer cleaning equipment along the liquid outlet pipe 14 and rinses the wafer.

[0032] The collecting box 10 is fixedly connected to the bottom of the placement chamber 2. The collecting box 10 recycles the excess raw materials or cleaning liquid to avoid affecting the quality of the cleaning liquid. The top of the collecting box 10 is connected to the return pipe 12, and the bottom of the mixing chamber 16 is provided with a discharge hole 30. The other end of the return pipe 12 passes through the fixed platform 32 and the protective box 9 and is connected to the bottom of the discharge hole 30; then the excess cleaning liquid in the mixing chamber 16 can enter the collecting box 10 along the return pipe 12 for recovery. At the same time, one end of each raw material pipe 18 is connected to the collecting box 10 through a pipe, and the excess raw material in the raw material pipe 18 can also enter the collecting box 10 through the pipe for recovery. This part is the existing technology and will not be elaborated here. The discharge solenoid valve 31 is installed on the inner wall of the bottom pipe 11 and the return pipe 12 and adjusts the internal liquid flow value. The discharge solenoid valve 31 adjusts the opening and closing of the bottom pipe 11 and the return pipe 12 accordingly, thereby realizing precise adjustment of the flow rate of the cleaning liquid.

[0033] The mixing box 15 also includes: a high-pressure nozzle 23, and multiple high-pressure nozzles 23 are movably connected to the bottom of the raw material pipe 18. When the raw material flow rate increases, the high-pressure nozzle 23 tilts upward and the distance between the high-pressure nozzle 23 and the inner wall of the mixing chamber 16 increases. The raw material inside the raw material pipe 18 enters the high-pressure nozzle 23 downward and flows directly along the high-pressure nozzle 23 to the inner wall of the mixing chamber 16. The raw material then flows vertically downward along the inner wall of the mixing chamber 16 to the inside of the mixing chamber 16, thereby not only realizing the flow, stirring and mixing of multiple raw materials, but also ensuring that the raw materials will not cause impact fluctuations on the liquid level of the cleaning liquid inside the mixing chamber 16, affecting the detection accuracy. , and it can also avoid the direct impact contact between the raw material and the cleaning liquid inside the mixing chamber 16 and the generation of excessive bubbles affecting the quality of the cleaning liquid. The flow meter 19, multiple flow meters 19 are arranged inside the raw material pipe 18 and are located above the mixing box 15. The flow meter 19 is used to detect the raw material flow value inside the raw material pipe 18; by using the flow meter 19 to detect the raw material flow inside the raw material pipe 18, the inclination angle of the high-pressure nozzle 23 is adjusted accordingly to further ensure that the flow rate of the raw material sprayed by the high-pressure nozzle 23 meets the requirements, and avoid the raw material directly entering the mixing chamber 16 and causing fluctuations in the liquid level and the generation of excessive bubbles.

[0034] A feed solenoid valve 20, multiple feed solenoid valves 20 are all arranged inside the raw material pipe 18 and above the flow meter 19, and the feed solenoid valve 20 adjusts the raw material flow value inside the raw material pipe 18; the feed solenoid valve 20 is used to adjust the raw material flow inside the raw material pipe 18, thereby improving the mixing accuracy and preparation quality of the cleaning liquid inside the mixing chamber 16; a liquid level sensor 28, multiple liquid level sensors 28 are fixedly connected to the top of the mixing chamber 16 and detect the liquid level value inside the mixing chamber 16, and the height value of the cleaning liquid inside the mixing chamber 16 is detected in real time with the help of the liquid level sensor 28, and the wafer is flushed and cleaned with the cleaning liquid accordingly.

[0035] The curved surface 17 is provided at the end corner of the mixing chamber 16 close to the high-pressure nozzle 23. The raw material flows downward along the side wall of the mixing chamber 16 and enters the interior of the mixing chamber 16 under the guidance of the curved surface 17. The setting of the curved surface 17 facilitates the sliding of the raw material into the cleaning liquid inside the mixing chamber 16, effectively avoiding the cleaning liquid from directly impacting the end corner of the mixing chamber 16 and diverging to form bubbles, thereby improving the cleaning quality and the mixing effect.

[0036] The mixing box 15 also includes: a first telescopic part 22, one end of the first telescopic part 22 is movably connected to the side wall of the raw material pipe 18, and the other end of the first telescopic part 22 is movably connected to the top of the high-pressure nozzle 23. Therefore, when the output end of the first telescopic part 22 is extended and drives the high-pressure nozzle 23 to increase its downward tilt angle; the first telescopic part 22 is used to adjust the tilt angle of the high-pressure nozzle 23, and the distance between the end of the high-pressure nozzle 23 and the side wall of the mixing chamber 16 is adjusted accordingly, thereby ensuring the mixing effect of the raw materials sprayed by the high-pressure nozzle 23 inside the mixing chamber 16.

[0037] The rotating shaft 21 is movably connected to the bottom of the raw material pipe 18, and the other end of the rotating shaft 21 is fixedly connected to the end of the high-pressure nozzle 23; the high-pressure nozzle 23 can drive the rotating shaft 21 to rotate under the raw material pipe 18, thereby realizing the change of the inclination angle of the high-pressure nozzle 23, the drainage pipe 24, the drainage pipe 24 is flexible, so when the high-pressure nozzle 23 rotates, it will not hinder the normal drainage of the raw materials inside the drainage pipe 24. One end of the drainage pipe 24 passes through the raw material pipe 18 and is connected to the interior thereof, and the other end of the drainage pipe 24 passes through the high-pressure nozzle 23 and is connected to the interior thereof. The raw materials inside the raw material pipe 18 enter the interior of the high-pressure nozzle 23 along the drainage pipe 24 and are discharged to the side wall of the mixing chamber 16, thereby realizing the normal flow of raw materials inside the raw material pipe 18 and the high-pressure nozzle 23.

[0038] Elastic guide pieces 27, multiple elastic guide pieces 27 are movably connected to the inner wall of the mixing chamber 16 away from the curved surface 17, and the elastic guide pieces 27 are elastic and the bottom is matched with the bottom of the mixing chamber 16. Therefore, the elastic guide pieces 27 can elastically block the raw materials entering the mixing chamber 16, so that they flow to both sides, further improving the mixing and blending effect of raw materials at different positions. When the high-pressure nozzle 23 tilts upward, it means that the amount of raw materials at that position increases, the distance between the elastic guide piece 27 and the curved surface 17 decreases and the guidance range of the raw materials to both sides is increased, so that the raw materials can be fully blended with other raw materials inside the mixing chamber 16, thereby improving the blending quality.

[0039] The mixing box 15 further includes: a second telescopic portion 25, a plurality of second telescopic portions 25 are fixedly connected to the inner wall of the mixing chamber 16, and two second telescopic portions 25 are provided in the same vertical direction; the two second telescopic portions 25 can not only be extended to the same length, but also to different lengths, thereby not only adjusting the distance of the elastic guide piece 27, but also adjusting the upward flow rate of the raw material according to the density of the raw material, ensuring that the raw materials are fully and effectively mixed and mixed, a tapered rod 26, and a side wall of the tapered rod 26 is movably connected to the output end of the second telescopic portion 25, so that when the output end of the second telescopic portion 25 is extended, the tapered rod 26 is synchronously driven. Move toward one end close to the curved surface 17, the end of the tapered rod 26 close to the curved surface 17 is a tapered structure, and the end of the tapered rod 26 is squeezed and contacted with the inner wall of the elastic guide piece 27. With the help of the tapered structure of the tapered rod 26 and the elastic guide piece 27, the raw materials are diverted to both sides, thereby improving the mixing and blending effect between multiple raw materials. When the output end of the second telescopic part 25 is extended and the elastic guide piece 27 is driven by the tapered rod 26 to elastically deform toward the end close to the curved surface 17, the distance between the elastic guide piece 27 and the curved surface 17 is reduced, and the raw material flows and contacts the elastic guide piece 27, then flows to both sides and mixes with other raw materials with improved efficiency.

[0040] The curved surface 17 has a smooth surface and is connected to the side wall and inner bottom of the mixing chamber 16 in an arc shape. The setting of the curved surface 17 further improves the guiding and steering effect of the raw material at the end corner of the mixing chamber 16. The curved surface 17 guides the raw material flowing vertically downward from the inner wall of the mixing chamber 16 to flow horizontally along the inner bottom of the mixing chamber 16. This not only reduces the impact and bubbling between the raw material and the cleaning liquid inside the mixing chamber 16, but also ensures the stability of the liquid level of the cleaning liquid inside the mixing chamber 16. The upper part of the elastic guide sheet 27 corresponds to the upper part of the curved surface 17, so that the raw material can be guided and diverted by the elastic guide sheet 27 after passing through the curved surface 17. The second telescopic part 25 and the tapered rod 26 are both located inside the elastic guide sheet 27. The second telescopic part 25 will not contact the cleaning liquid inside the mixing chamber 16, and the end of the elastic guide sheet 27 is fixedly connected to the side wall of the mixing chamber 16 away from the curved surface 17. Therefore, when the elastic guide sheet 27 undergoes elastic deformation, the interior is still in a sealed state.

[0041] The horizontal distances between the multiple raw material pipes 18 and the side walls of the mixing chamber 16 are all equal, so the rotation processes of the multiple raw material pipes 18 are all the same, and the end of the high-pressure nozzle 23 corresponds to the side wall of the mixing chamber 16. The raw material sprayed by the high-pressure nozzle 23 directly acts on the inner wall of the mixing chamber 16 and blocks the raw material, preventing the raw material from directly vertically downwardly entering the cleaning liquid inside the mixing chamber 16 and generating bubbles, etc. The side wall of the mixing chamber 16 is provided with an impact-resistant layer and matches the rotation angle of the high-pressure nozzle 23. The impact-resistant layer prevents the raw material sprayed by the high-pressure nozzle 23 from acting on the inner wall of the mixing chamber 16 for a long time and reducing its own strength. The positions of the multiple high-pressure nozzles 23 all correspond to the position of the tapered rod 26. The raw material sprayed by the high-pressure nozzle 23 is guided along the side wall of the mixing chamber 16 and the curved surface 17 to reach the elastic guide sheet 27 and undergo subsequent guidance. Diversion, the range of movement of the high-pressure nozzle 23 is to rotate obliquely upward in the horizontal direction. Therefore, when the flow rate of raw materials sprayed by the high-pressure nozzle 23 increases, the high-pressure nozzle 23 rotates upward, so the distance between the high-pressure nozzle 23 and the side wall of the mixing chamber 16 increases, and the flow rate of the raw materials when reaching the side wall of the mixing chamber 16 decreases, thereby effectively reducing the impact of the high-pressure nozzle 23 on the side wall of the mixing chamber 16 and affecting the structural strength of the raw materials and the side wall of the mixing chamber 16. In addition, since the height of the raw materials reaching the side wall of the mixing chamber 16 increases, the distance of the raw materials flowing downward along the side wall of the mixing chamber 16 increases under the action of their own gravity, thereby ensuring that the flow rate and flow rate of the raw materials when entering the cleaning liquid meet the requirements, effectively avoiding the impact of the raw materials on the cleaning liquid and causing the liquid level fluctuation above the cleaning liquid to affect the liquid level detection accuracy of the cleaning liquid in the mixing chamber 16 by the liquid level sensor 28.

[0042] At the same time, in actual use, a stirring part can be set inside the mixing chamber 16, and the stirring part is staggered with the raw material pipe 18, the high-pressure nozzle 23 and the elastic guide plate 27. Therefore, when the stirring part rotates, the cleaning liquid inside the mixing chamber 16 can be stirred and mixed, further improving the mixing effect of the raw materials. In actual use, two mixing boxes 15 can be set, and the two mixing boxes 15 are connected to the pump body 7 through the bottom pipe 11. In this way, when the pump body 7 is working and the cleaning liquid inside one mixing box 15 is sucked and discharged, the required raw materials are mixed inside the other mixing box 15, thereby realizing uninterrupted wafer cleaning. This part is still the existing technology and can be installed according to actual needs. I will not go into details here.

[0043] Therefore, in the above-mentioned wafer cleaning liquid mixing system, the liquid level value of the cleaning liquid in the mixing chamber 16 is monitored in real time with the help of the liquid level sensor 28. However, if the raw materials are continuously impacted vertically downward into the mixing chamber 16 and the cleaning liquid is prepared, the liquid surface of the cleaning liquid will fluctuate accordingly and affect the detection accuracy of the cleaning liquid level value by the liquid level sensor 28. At the same time, bubbles are easily generated when the raw materials impact and flow, and the bubbles not only reduce the quality of the cleaning liquid, but also affect the liquid level detection accuracy of the liquid level sensor 28; and when the high-pressure nozzle 23 impacts the inner wall of the mixing chamber 16 for a long time, it is easy to cause damage to the inner wall structure of the mixing chamber 16 and the structure of the raw materials themselves, thereby failing to guarantee the mixing effect of the cleaning liquid; and if the raw materials inside the high-pressure nozzle 23 If the flow rate changes, the impact force between the high-pressure nozzle 23 and the side wall of the mixing chamber 16 will change accordingly. The bubbles generated when the raw materials are blocked and the fluctuation force of the downward flow on the cleaning liquid will change, and the stability of the liquid surface above the cleaning liquid and the bubble-free effect cannot be achieved; similarly, if the amount of raw materials sprayed by the high-pressure nozzle 23 changes, the flow rate and flow volume of the raw materials in the cleaning liquid will change accordingly, which will easily cause some raw materials to be unable to be fully mixed and modulated, thereby reducing the quality of subsequent cleaning liquid; and when the density of the raw materials changes, the raw materials will accumulate and precipitate at different positions in the cleaning liquid, causing the various raw materials to be unable to mix and affecting the mixing effect of the cleaning liquid. After the mixing is completed, the impurities in the raw materials will accumulate on the inner wall of the mixing chamber 16 and will affect the subsequent mixing and preparation of the raw materials.

[0044] In order to solve the above problems, when the wafer cleaning liquid preparation system is actually used, if the cleaning liquid needs to be prepared, the CNC screen 4 turns on the automatic mode, and the electrical control box 6 supplies power to each component. Then, the raw materials inside the multiple raw material boxes, such as deionized water, ammonia water and hydrogen peroxide, enter the raw material pipe 18 under the suction action of the high-pressure pump. At the same time, the feed solenoid valve 20 is opened, and the flow meter 19 detects the flow value of the raw materials inside the raw material pipe 18, and adjusts the opening degree of each feed solenoid valve 20 according to the formula of the SC-1 cleaning liquid, so that the flow value of the raw material pipe 18 along the drainage pipe 24 to the high-pressure nozzle 23 meets the preparation requirements, thereby improving the subsequent preparation quality.

[0045] After that, the high-pressure nozzle 23 is located in the horizontal direction and sprays the raw material horizontally toward the side wall of the mixing chamber 16. The raw material collides with the side wall of the mixing chamber 16 and reduces its own flow rate. Then, under the action of the raw material's own gravity, it flows downward along the side wall of the mixing chamber 16. When the raw material reaches the position of the curved surface 17, with the help of the smoothness and guidance of the curved surface 17 itself, the raw material is transformed from a vertical downward direction along the side wall of the mixing chamber 16 to a horizontal left-right flow, and gradually flows into the mixing chamber 16 to be mixed with other raw materials. Figure 8The dotted line direction shown is the flow direction of the raw material. With the help of the flow of the raw material itself and the guidance of the curved surface 17, and with the flow of the raw material on the side wall of the mixing chamber 16, the raw material is prevented from falling directly onto the inner wall of the mixing chamber 16 to generate bubbles or large liquid level fluctuations, thereby reducing the accuracy of the liquid level value detected by the subsequent liquid level sensor 28.

[0046] And when the raw materials flow horizontally in the left and right directions under the guidance of the curved surface 17 and reach the end of the elastic guide piece 27, the raw materials and the end of the elastic guide piece 27 collide with each other, and the conical structure of the conical rod 26 makes the raw materials flow in the mixing chamber 16 instead of the left and right directions to the front and back directions, and multiple raw materials contact and mix with each other in the front and back directions, effectively improving the mixing quality and efficiency of the raw materials, and avoiding the raw materials from being stationary for a long time in their respective areas and reducing the mixing and preparation effect.

[0047] As multiple raw materials continue to flow vertically downward along the side wall of the mixing chamber 16, the raw materials enter the position below the cleaning liquid along the curved surface 17 under the action of gravity and move horizontally. The raw materials have little effect on the fluctuation of the liquid level above the cleaning liquid. The liquid level sensor 28 detects that the lower liquid level value is in a stable state, and the stable flow of the raw materials and the impact of the cleaning liquid produce few bubbles, and the position of the bubbles is far away from the detection position of the liquid level sensor 28, further avoiding the flow of bubbles and large fluctuations in the liquid level from affecting the liquid level value above the cleaning liquid detected by the liquid level sensor 28. This not only effectively improves the mixing efficiency and mixing effect of the cleaning liquid, but also ensures the accuracy of the cleaning liquid level detection by the liquid level sensor 28, thereby improving the subsequent wafer cleaning effect.

[0048] At the same time, due to the different flow rates of the raw materials inside the multiple raw material pipes 18, the corresponding raw material flow rates sprayed out of the high-pressure nozzle 23 are different. That is, when the flow value detected by the flow meter 19 increases, it means that the flow rate of the raw material inside the raw material pipe 18 increases, and the flow rate of the raw material sprayed out along the high-pressure nozzle 23 increases. In order to avoid the large raw material flow rate from having an excessive impact on the side wall of the mixing chamber 16 and causing structural damage, the numerical control screen 4 controls the first telescopic part 22 to start and shorten the output end. The first telescopic part 22 drives the high-pressure nozzle 23 to tilt upward in the horizontal direction, and the tilt angle gradually increases. According to the hypotenuse principle, The distance between the end of the high-pressure nozzle 23 and the inner wall of the mixing chamber 16 is constantly increasing. When the raw material sprayed by the high-pressure nozzle 23 reaches the side wall of the mixing chamber 16, the flow rate decreases due to the increase in distance, thereby ensuring that the flow rate of the raw material sprayed by the high-pressure nozzle 23 meets the requirements when it reaches the side wall of the mixing chamber 16, and the impact force between the raw material and the side wall of the mixing chamber 16 meets the requirements, avoiding excessive impact force when the raw material flow rate is too high and collides with the side wall of the mixing chamber 16, thereby damaging the side wall structure of the mixing chamber 16 and the raw material itself, effectively improving the quality of subsequent raw material preparation cleaning fluid, and meeting the cleaning needs of the cleaning fluid.

[0049] Moreover, when the high-pressure nozzle 23 rotates upward, the amount of raw material sprayed by the high-pressure nozzle 23 increases, and the height of the raw material increases when it reaches the side wall of the mixing chamber 16. Therefore, the distance the raw material flows downward along the side wall of the mixing chamber 16 under the action of its own gravity increases, further ensuring that the raw material enters the cleaning liquid evenly and stably along the side wall of the mixing chamber 16 under the action of its own gravity, that is, the amount of raw material entering the cleaning liquid remains stable, avoiding more raw materials from entering the cleaning liquid and causing shaking inside the cleaning liquid under the guidance of the curved surface 17, effectively ensuring the stability of the liquid surface above the cleaning liquid and improving the detection accuracy of the liquid level sensor 28 for the liquid surface above the cleaning liquid.

[0050] When the raw material changes from flowing in the vertical downward direction to flowing in the horizontal left and right direction under the guidance of the curved surface 17, due to the increase in the amount of raw material at this position, the numerical control screen 4 correspondingly controls the second telescopic part 25 of this position to start and the output end to extend, and the second telescopic part 25 drives the tapered rod 26 to move toward the end close to the curved surface 17, and the tapered rod 26 drives the elastic guide piece 27 to elastically deform toward the end close to the curved surface 17, and the blocking area of ​​the elastic guide piece 27 for the raw material increases. Then, under the tapered guidance of the raw material and the elastic guide piece 27, the flow amount from the horizontal left and right direction to the forward and backward direction increases, thereby ensuring that the larger amount of raw material can be fully and effectively mixed with the remaining raw materials, improving the mixing effect between the raw materials, meeting the actual mixing needs, and correspondingly avoiding the collision of the raw material with the side wall of the mixing chamber 16 away from the curved surface 17 end when the amount of raw material increases and continuing to flow upward to cause fluctuations in the liquid level of the cleaning liquid, effectively improving the liquid level stability of the cleaning liquid and the accuracy of the liquid level detection by the liquid level sensor 28.

[0051] Furthermore, the inclination direction and inclination angle of the conical rod 26 can be adjusted according to the density of the raw materials themselves, and the raw materials can be fully and effectively mixed and deployed under the guidance of the curved surface 17. Specifically, since the amount of deionized water is the largest and fills the mixing chamber 16 as the base liquid, and when the density of the remaining raw materials is greater than that of deionized water, for example, the density of hydrogen peroxide is slightly greater than that of deionized water, the raw materials will enter the cleaning liquid under the guidance of the curved surface 17 and will be precipitated under the cleaning liquid due to their own density, which will affect the mixing effect of the various raw materials. At this time, the numerical control screen 4 controls the second telescopic part 25 at the lower end of the conical rod 26 at the corresponding position to start and extend the output end, while the extension length of the second telescopic part 25 at the upper end remains unchanged. The movable connection between the two telescopic parts 25 and the tapered rod 26 drives the tapered rod 26 to tilt, and the tilting direction of the tapered rod 26 is that the distance between the bottom and the curved surface 17 is smaller than the distance between the top and the curved surface 17. The tapered rod 26 correspondingly drives the elastic guide piece 27 to tilt, and when the raw material flows in the horizontal left and right directions under the guidance of the curved surface 17, it collides with the elastic guide piece 27 and is diverted. Therefore, the raw material can not only flow in the horizontal left and right directions and be guided to flow in the horizontal front and back directions, but also can be guided upward under the tilted setting of the elastic guide piece 27, further increasing the mixing and adjustment area of ​​the raw material. After the raw material leaves the elastic guide piece 27, it continues to settle downward under the action of its own density, ensuring the mixing and modulation effect of the raw material with other raw materials.

[0052] At the same time, according to the above process, the flow rates of different raw materials inside the raw material pipe 18 are different, and the flow rate of the same raw material inside the raw material pipe 18 will also change at different times. The flow value detected by the flow meter 19 changes, and then the inclination angle of the high-pressure nozzle 23 is adjusted accordingly according to the above process. The impact position of the high-pressure nozzle 23 on the side wall of the mixing chamber 16 changes accordingly, which effectively avoids the high-pressure nozzle 23 impacting the same position of the side wall of the mixing chamber 16 for a long time and causing damage to the inner wall structure of the mixing chamber 16, thereby improving the stability and durability of the mixing chamber 16.

[0053] When the liquid level sensor 28 detects that the liquid level above the cleaning liquid inside the mixing chamber 16 reaches the required height, it means that the amount of cleaning liquid inside the mixing chamber 16 meets the requirement. At this time, the feed solenoid valve 20 is closed, and no more raw materials are introduced into the raw material pipe 18. The flow value detected by the flowmeter 19 is zero. When cleaning liquid is needed to clean the wafer, the pump body 7 starts and applies suction force to the inside of the mixing chamber 16 through the bottom pipe 11. The cleaning liquid inside the mixing chamber 16 enters the pump body 7 along the bottom pipe 11, and enters the filter 8 along the connecting pipe 13 from the pump body 7. After the filter 8 performs the required filtering on the cleaning liquid, it finally flows along the liquid outlet pipe 14 to the wafer cleaning device and performs the required cleaning on the wafer.

[0054] When the cleaning liquid inside the mixing chamber 16 is discharged, the above process is repeated to mix and prepare the various raw materials. When the cleaning is completed and the mixing chamber 16 needs to be flushed, deionized water is introduced into the raw material pipe 18, and the deionized water is sprayed along the high-pressure nozzle 23 to flush and clean the inner wall of the mixing chamber 16. At the same time, the high-pressure nozzle 23 is continuously tilted and rotated to increase the cleaning area of ​​the side wall of the mixing chamber 16. During the flushing process, the inner wall of the mixing chamber 16 is cleaned in all directions under the changing guidance of the elastic guide sheet 27. The elastic guide sheet 27 moves at the bottom of the mixing chamber 16 and scrapes and cleans it accordingly to avoid the raw materials sticking to the inner wall of the mixing chamber 16 and affecting the subsequent preparation. At the same time, the discharge solenoid valve 31 is opened, and the deionized water inside the mixing chamber 16 enters the collection box 10 along the reflux pipe 12 for recovery. After the cleaning is completed, the discharge solenoid valve 31 is closed, and the above process is repeated to mix and prepare the subsequent raw materials.

[0055] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0056] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A wafer cleaning liquid preparation system, comprising a cabinet (1), a placement cavity (2) provided inside the cabinet (1), a preparation box (15) provided inside the placement cavity (2), a mixing cavity (16) provided inside the preparation box (15) for preparing and mixing various raw materials, characterized in that: The mixing box (15) includes: Raw material pipes (18), a plurality of raw material pipes (18) are inserted into the mixing chamber (16) and transport different raw materials; High-pressure nozzles (23), wherein a plurality of the high-pressure nozzles (23) are movably connected to the bottom of the raw material pipe (18), and when the raw material flow rate increases, the high-pressure nozzles (23) tilt upward and the distance between the high-pressure nozzles (23) and the inner wall of the mixing chamber (16) increases; A curved surface (17), wherein the curved surface (17) is provided at an end corner of the mixing chamber (16) close to the high-pressure nozzle (23), and the raw material flows downward along the side wall of the mixing chamber (16) and enters the interior of the mixing chamber (16) under the guidance of the curved surface (17); Elastic guide pieces (27), a plurality of said elastic guide pieces (27) are movably connected to the inner wall of the mixing chamber (16) on the side away from the curved surface (17); when the high-pressure nozzle (23) is tilted upward, the distance between the elastic guide pieces (27) and the curved surface (17) is reduced and the range of guiding the raw materials to both sides is increased.

2. The wafer cleaning liquid preparation system according to claim 1, characterized in that: The mixing box (15) further includes: A flow meter (19), wherein a plurality of the flow meters (19) are arranged inside the raw material pipe (18) and located above the mixing box (15), and the flow meter (19) is used to detect the raw material flow value inside the raw material pipe (18); A feed solenoid valve (20), wherein a plurality of the feed solenoid valves (20) are arranged inside the raw material pipe (18) and above the flow meter (19), and the feed solenoid valves (20) adjust the flow value of the raw material inside the raw material pipe (18); Liquid level sensors (28), wherein a plurality of the liquid level sensors (28) are fixedly connected to the top of the mixing chamber (16) and detect the liquid level value inside the mixing chamber (16).

3. The wafer cleaning liquid preparation system according to claim 1, characterized in that: The mixing box (15) further includes: a first telescopic portion (22), one end of the first telescopic portion (22) being movably connected to the side wall of the raw material pipe (18), the other end of the first telescopic portion (22) being movably connected to the upper portion of the high-pressure nozzle (23), the output end of the first telescopic portion (22) being shortened and driving the high-pressure nozzle (23) to increase its upward tilt angle; A rotating shaft (21), wherein the rotating shaft (21) is movably connected to the bottom of the raw material pipe (18), and the other end of the rotating shaft (21) is fixedly connected to the end of the high-pressure nozzle (23); A drainage tube (24), one end of which passes through the raw material tube (18) and is connected to the interior thereof, and the other end of which passes through the high-pressure nozzle (23) and is connected to the interior thereof. The drainage tube (24) is flexible, and the raw material inside the raw material tube (18) enters the interior of the high-pressure nozzle (23) along the drainage tube (24) and is discharged toward the side wall of the mixing chamber (16).

4. The wafer cleaning liquid preparation system according to claim 1, characterized in that: The mixing box (15) further includes: A second telescopic portion (25), wherein a plurality of the second telescopic portions (25) are fixedly connected to the inner wall of the mixing chamber (16), and two second telescopic portions (25) are provided in the same vertical direction; A conical rod (26), wherein the side wall of the conical rod (26) is movably connected to the output end of the second telescopic portion (25), and the end of the conical rod (26) close to the curved surface (17) is a conical structure, and the end of the conical rod (26) is in extrusion contact with the inner wall of the elastic guide piece (27). When the output end of the second telescopic portion (25) is extended, the elastic guide piece (27) is driven by the conical rod (26) to elastically deform toward the end close to the curved surface (17).

5. The wafer cleaning liquid preparation system according to claim 4, characterized in that: The curved surface (17) is smooth and is connected to the side wall and inner bottom of the mixing chamber (16) in an arc shape. The curved surface (17) guides the raw material flowing vertically downward from the inner wall of the mixing chamber (16) to flow horizontally along the inner bottom of the mixing chamber (16). The elastic guide piece (27) is elastic and its lower part matches the inner bottom of the mixing chamber (16). The upper part of the elastic guide piece (27) corresponds to the upper part of the curved surface (17). The second telescopic portion (25) and the tapered rod (26) are both located inside the elastic guide piece (27), and the end of the elastic guide piece (27) is fixedly connected to the side wall of the mixing chamber (16) away from the curved surface (17).

6. The wafer cleaning liquid preparation system according to claim 1, characterized in that: The horizontal distances between the plurality of raw material pipes (18) and the side wall of the mixing chamber (16) are all equal, and the end of the high-pressure nozzle (23) corresponds to the side wall of the mixing chamber (16), the side wall of the mixing chamber (16) is provided with an impact-resistant layer and matches the rotation angle of the high-pressure nozzle (23), the positions of the plurality of high-pressure nozzles (23) all correspond to the position of the tapered rod (26), and the range of movement of the high-pressure nozzle (23) is to rotate obliquely upward in the horizontal direction.

7. The wafer cleaning liquid preparation system according to claim 1, characterized in that: Also includes: A protection box (9), the mixing box (15) is located inside the protection box (9), and a heating portion is provided inside the protection box (9) and on the outer surface of the mixing box (15) to heat the raw materials inside the mixing chamber (16); A fixing platform (32), one side of the fixing platform (32) is fixedly connected to the inner wall of the placement cavity (2), and the bottom of the protection box (9) is fixedly connected to the top of the fixing platform (32); A pump body (7) is fixedly connected to the bottom of the placement chamber (2); a bottom pipe (11) is provided at the input end of the pump body (7); a splicing hole (29) is provided at the bottom of the mixing chamber (16); the other end of the bottom pipe (11) passes through the fixing platform (32) and the protection box (9) and is connected to the bottom of the splicing hole (29).

8. The wafer cleaning liquid preparation system according to claim 1, characterized in that: Also includes: A mounting frame (3), the mounting frame (3) being fixedly connected to the inner wall of the placement cavity (2), an electric control box (6) being provided on the top of the mounting frame (3), and the electric control box (6) supplying power to various electrical components; A numerical control screen (4), the numerical control screen (4) is fixedly mounted on one side of the cabinet (1), and the numerical control screen (4) is electrically connected to various electrical components; An emergency button (5) is fixedly connected to one side of the cabinet (1), and the emergency button (5) electrically controls the system switch.

9. The wafer cleaning liquid preparation system according to claim 7, characterized in that: Also includes: A filter (8), wherein the filter (8) is fixedly connected to the bottom of the fixing platform (32), the input end of the filter (8) is connected to the output end of the pump body (7) through a connecting pipe (13), and the output end of the filter (8) is connected to the input end of the wafer cleaning equipment through a liquid outlet pipe (14); A collecting box (10), the collecting box (10) is fixedly connected to the bottom of the placement chamber (2), the top of the collecting box (10) is connected to a return pipe (12), the bottom of the mixing chamber (16) is provided with a discharge hole (30), and the other end of the return pipe (12) passes through the fixing platform (32), the protection box (9) and is connected to the bottom of the discharge hole (30); A discharge solenoid valve (31) is installed on the inner wall of the bottom pipe (11) and the return pipe (12) and adjusts the internal liquid flow value.

Images