High-precision vacuum reaction chamber temperature compensation device of semiconductor wafer

Abstract

The invention relates to a high-precision vacuum reaction chamber temperature compensation device of a semiconductor wafer, which is applied to the field of semiconductor devices and comprises a vacuum reaction chamber and a temperature compensation system carried in a control box of the vacuum reaction chamber. According to the method, double acquisition of preposed preheating temperature data and temperature data after subsequent process gas flows through a vacuum reaction chamber for heat exchange is realized, then a cooperative compensation effect on the preposed preheating temperature and the temperature in the chamber is realized according to a result of the double temperature data, and a difference value between the process gas temperature and the chamber temperature is dynamically maintained to be stable; abnormal temperature difference fluctuation caused by temperature fluctuation of the cavity is effectively restrained, the risk of shock cooling when process gas enters is eradicated, meanwhile, dynamic temperature difference disturbance in the gas injection process is successfully eliminated, and accurate compensation and fine regulation and control of the reaction temperature are achieved.

Description

Technical Field

[0001] The present invention relates to a vacuum reaction chamber for a semiconductor wafer, and in particular to a high-precision vacuum reaction chamber temperature compensation device for a semiconductor wafer applied in the field of semiconductor devices. Background Art

[0002] Semiconductor wafer deposition involves forming various functional thin films on the surface of a semiconductor wafer within a vacuum reaction chamber. Temperature is a key parameter influencing deposition quality, device performance, and yield. However, existing vacuum reaction chambers often suffer from temperature leakage, resulting in insufficient thermal insulation and becoming a significant bottleneck restricting process stability.

[0003] To address this problem, Chinese invention patent CN115547896B discloses a water-free low-temperature processing device for semiconductor wafers. By setting a mirror reflector between the vacuum chamber and the reaction chamber, the mirror reflector can reflect heat to prevent temperature leakage. The temperature of the outer wall of the reaction box is low, thereby achieving thermal insulation for the reaction chamber. However, new challenges have been discovered in actual applications: the problem of uneven heating of semiconductor wafers has gradually become prominent. To this end, Chinese invention patent application CN118335647A discloses a semiconductor process chamber that supports the edge area of ​​the wafer by supporting protrusions to avoid direct contact between the upper surface of the support ring and the lower surface of the wafer. The contact area between the support ring and the wafer is reduced, and the influence of the support ring on the temperature of the edge area of ​​the wafer is reduced, thereby improving the heating uniformity of the wafer.

[0004] It is worth noting that the current mainstream technology also integrates a dual temperature control mechanism of zone heating and pre-process gas preheating, which aims to suppress the sudden cooling effect by precisely controlling the thermal field distribution in different areas and preheating the injected gas. Despite this, due to the inevitable temperature fluctuations inside the vacuum reaction chamber, the dynamic temperature difference between the pre-preheating and the actual temperature inside the chamber will still trigger transient cooling during gas injection. This secondary thermal disturbance caused by temperature fluctuations not only destroys the original steady-state temperature control system, but also causes significant temperature fluctuations in the chamber, which ultimately directly affects the stability and yield of the semiconductor wafer preparation process. Summary of the Invention

[0005] In response to the above-mentioned existing technologies, the technical problem to be solved by the present invention is how to further optimize the temperature control system of the vacuum reaction chamber, achieve more precise temperature uniformity control while ensuring efficient heat preservation, and effectively eliminate the dynamic temperature difference fluctuations caused by gas injection, thereby improving the process stability and product quality consistency of semiconductor wafer deposition processing.

[0006] To solve the above problems, the present invention provides a high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers, comprising a vacuum reaction chamber and a temperature compensation system mounted in a vacuum reaction chamber control box. An air inlet channel is provided at the left end of the vacuum reaction chamber and connected thereto, and a preheating sensing component is provided in the air inlet channel. An air outlet channel is provided at the right end of the vacuum reaction chamber and connected thereto, and a heat exchange sensing component is provided in the air outlet channel. The temperature compensation system includes a temperature compensation processing unit, the input end of the temperature compensation processing unit is connected to the preheating state acquisition unit and the heat exchange state acquisition unit, and the output end of the temperature compensation processing unit is connected to the temperature compensation unit; The input end of the preheating state acquisition unit is connected to the preheating sensing component signal, the input end of the heat exchange state acquisition unit is connected to the heat exchange sensing component signal, and the output end of the temperature compensation unit is respectively connected to the temperature control system arranged on the vacuum reaction chamber and the pre-preheating structure signal arranged in the process gas control system.

[0007] In the above-mentioned high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers, dual collection of preheating temperature data and temperature data of subsequent process gas after heat exchange in the vacuum reaction chamber is achieved, and then based on the results of the dual temperature data, a coordinated compensation effect of the preheating temperature and the temperature in the chamber is achieved.

[0008] As a further improvement of the present application, a preheating sensing groove is opened on the left side of the inner wall of the air intake channel, and the preheating sensing assembly includes a preheating lower limit touch ring fixedly arranged at the left end of the preheating sensing groove and a preheating upper limit touch ring fixedly arranged at the right end of the preheating sensing groove. A preheating display ring is slidingly connected in the preheating sensing groove and is arranged between the preheating lower limit touch ring and the preheating upper limit touch ring. The input end of the preheating status acquisition unit is respectively connected to the preheating lower limit touch ring and the preheating upper limit touch ring signals.

[0009] As a further improvement of the present application, a preheating memory deformation strip is fixedly connected between the preheating lower limit touch ring and the preheating display ring, a balancing spring is fixedly connected between the preheating display ring and the preheating upper limit touch ring, and the preheating memory deformation strip and the balancing spring are slidably sleeved on the outside of the triggering ends of the preheating lower limit touch ring, the preheating display ring and the preheating upper limit touch ring; When the preheating memory deformation strip does not produce thermal elongation deformation, the spring coefficient of the balancing spring is greater than the spring coefficient of the preheating memory deformation strip, causing the balancing spring to be in an extended state and the preheating memory deformation strip to be in a contracted state. At this time, the preheating display ring moves to the left and contacts the preheating lower limit touch ring.

[0010] As a further improvement of the present application, a heat exchange sensing groove is opened on the right side of the inner wall of the air outlet channel, and the heat exchange sensing component includes a heat exchange lower limit touch ring fixedly arranged at the left end of the heat exchange sensing groove and a heat exchange upper limit touch ring fixedly arranged at the right end of the heat exchange sensing groove. A heat exchange display ring is slidingly connected in the heat exchange sensing groove between the heat exchange lower limit touch ring and the heat exchange upper limit touch ring, and the input end of the heat exchange status acquisition unit is respectively connected to the heat exchange lower limit touch ring and the heat exchange upper limit touch ring signals.

[0011] As a further improvement of the present application, a heat exchange memory deformation strip is fixedly connected between the heat exchange lower limit contact ring and the heat exchange display ring, and an auxiliary spring is fixedly connected between the heat exchange display ring and the heat exchange upper limit contact ring, and the heat exchange memory deformation strip and the auxiliary spring are both slidably sleeved on the outside of the trigger ends of the heat exchange lower limit contact ring, the heat exchange display ring and the heat exchange upper limit contact ring; When the heat exchange memory deformation strip does not produce thermal elongation deformation, the stiffness coefficient of the auxiliary spring is greater than the stiffness coefficient of the heat exchange memory deformation strip, causing the auxiliary spring to be in an extended state and the heat exchange memory deformation strip to be in a contracted state. At this time, the heat exchange display ring moves to the left and contacts the heat exchange lower limit contact ring.

[0012] As a further improvement of the present application, the output end of the temperature compensation processing unit is connected to the temperature difference prediction unit, and the output end of the temperature difference prediction unit is respectively connected to the temperature compensation processing unit and the temperature compensation unit signal.

[0013] As a further improvement of the present application, a delivery pipe connected to the left end of the air inlet channel is fixedly installed, and an output pipe connected to the right end of the air outlet channel is fixedly connected, and both the delivery pipe and the output pipe are coordinated with the process gas control system.

[0014] As a further improvement of the present application, the input end of the temperature compensation processing unit is also connected to a parameter setting unit and an in-chamber temperature acquisition unit. The input end of the parameter setting unit is connected to a data port signal provided on the control box, and the input end of the in-chamber temperature acquisition unit is connected to a temperature sensing probe signal provided in the vacuum reaction chamber.

[0015] As a further improvement of the present application, the output end of the temperature compensation processing unit is also connected to a temperature difference status display unit and a compensation abnormality unit. The output end of the temperature difference status display unit is connected to a display signal set on the control box, and the output end of the compensation abnormality unit is connected to an alarm signal set on the control box.

[0016] As another improvement of the present application, the input end of the temperature compensation processing unit is also connected to the operation status acquisition unit, the input end of the operation status acquisition unit is connected to the process gas control system signal, and an electric control valve located on the right side of the preheating induction tank is also installed on the air inlet channel. The output end of the temperature compensation processing unit is also connected to the intermittent release insulation unit, and the output end of the intermittent release insulation unit is connected to the electric control valve signal.

[0017] In summary, through the coordinated cooperation of the preheating sensing component, the heat exchange sensing component and the temperature compensation system, dual collection of the preheating temperature data and the temperature data of the subsequent process gas after heat exchange in the vacuum reaction chamber is achieved. Then, based on the results of the dual temperature data, the preheating temperature and the temperature in the chamber are coordinated and compensated, and the difference between the process gas temperature and the chamber temperature is dynamically maintained stable, effectively suppressing the abnormal temperature difference fluctuation caused by the fluctuation of the chamber temperature, eliminating the risk of sudden cooling when the process gas enters, and successfully eliminating the dynamic temperature difference disturbance during the gas injection process, achieving accurate compensation and fine control of the reaction temperature. The setting of this device significantly improves the performance of the temperature control system of the vacuum reaction chamber, so that it can achieve better temperature uniformity control effect while maintaining efficient and high-temperature operation, and ultimately provides excellent stability guarantee for the semiconductor wafer deposition process and ensures high consistency of product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is an axonometric diagram of the vacuum reaction chamber temperature compensation device according to the first and second embodiments of the present application; Figure 2 This is a control logic diagram of the temperature compensation system of the first and second embodiments of the present application; Figure 3 This is an axonometric cross-sectional view of the vacuum reaction chamber when the temperature difference is normal according to the first and second embodiments of the present application; Figure 4 This is an axonometric cross-sectional view of the vacuum reaction chamber when the temperature difference in the first and second embodiments of the present application is at the maximum abnormal value; Figure 5 This is an axonometric cross-sectional view of the vacuum reaction chamber when the pre-preheating is at a low temperature in the first and second embodiments of the present application; Figure 6 This is an axonometric cross-sectional view of the vacuum reaction chamber when the preheating is at a high temperature in the first and second embodiments of the present application; Figure 7 1 is an axonometric cross-sectional view of the vacuum reaction chamber when the temperature inside the vacuum reaction chamber is low according to the first and second embodiments of the present application; Figure 8 Exploded views of the vacuum reaction chamber temperature compensation device according to the first and second embodiments of the present application; Figure 91. It is a front cross-sectional view of the vacuum reaction chamber temperature compensation device according to the first and second embodiments of the present application; Figure 10 For the first and second embodiments of this application Figure 9 A partial enlarged view of the middle part; Figure 11 For the first and second embodiments of this application Figure 9 A partial enlarged view of point B in the middle.

[0019] Description of the numbers in the figure: 1. Vacuum reaction chamber; 11. Air inlet channel; 111. Preheating induction tank; 12. Air outlet channel; 121. Heat exchange induction tank; 21. Delivery pipe; 22. Output pipe; 3. Preheating induction assembly; 31. Preheating lower limit touch ring; 32. Preheating display ring; 33. Preheating upper limit touch ring; 34. Preheating memory deformation strip; 35. Balancing spring; 4. Heat exchange induction assembly; 41. Heat exchange lower limit touch ring; 42. Heat exchange display ring; 43. Heat exchange upper limit touch ring; 44. Heat exchange memory deformation strip; 45. Auxiliary spring. DETAILED DESCRIPTION

[0020] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.

[0021] The first implementation method: Figure 1 - Figure 11 FIG. 1 shows a high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers, comprising a vacuum reaction chamber 1 and a temperature compensation system mounted in a control box of the vacuum reaction chamber 1. An air inlet channel 11 is provided at the left end of the vacuum reaction chamber 1 and connected thereto. A preheating sensing component 3 is disposed within the air inlet channel 11. An air outlet channel 12 is provided at the right end of the vacuum reaction chamber 1 and connected thereto. A heat exchange sensing component 4 is disposed within the air outlet channel 12. The temperature compensation system includes a temperature compensation processing unit, the input end of the temperature compensation processing unit is connected to the preheating state acquisition unit and the heat exchange state acquisition unit, and the output end of the temperature compensation processing unit is connected to the temperature compensation unit; The input end of the preheating state acquisition unit is connected to the preheating sensing component 3 signal, the input end of the heat exchange state acquisition unit is connected to the heat exchange sensing component 4 signal, and the output end of the temperature compensation unit is respectively connected to the temperature control system arranged on the vacuum reaction chamber 1 and the pre-preheating structure signal arranged in the process gas control system. Through the coordinated cooperation of the preheating sensing component 3, the heat exchange sensing component 4 and the temperature compensation system, the pre-preheating temperature data and the subsequent temperature data of the process gas after heat exchange in the vacuum reaction chamber 1 are dually collected, and then the pre-preheating temperature and the temperature in the chamber are adjusted according to the results of the dual temperature data. The synergistic compensation effect dynamically maintains the difference between the process gas temperature and the chamber temperature stable, effectively suppresses abnormal temperature difference fluctuations caused by chamber temperature fluctuations, eliminates the risk of sudden cooling when the process gas enters, and successfully eliminates the dynamic temperature difference disturbance during the gas injection process, achieving precise compensation and fine regulation of the reaction temperature. The setting of this device significantly improves the performance of the temperature control system of the vacuum reaction chamber 1, so that it can achieve better temperature uniformity control effect while maintaining efficient and high-temperature operation, ultimately providing excellent stability guarantee for the semiconductor wafer deposition process and ensuring high consistency of product quality.

[0022] It should be noted that the temperature control system, process gas control system and pre-preheating structure are all existing structures. No changes have been made to them here. They are directly quoted. Those skilled in the art can select them according to actual needs, so they will not be described in detail.

[0023] Figure 3 - Figure 11As shown, a preheating sensing groove 111 is provided on the left side of the inner wall of the air intake channel 11, and the preheating sensing component 3 includes a preheating lower limit touch ring 31 fixedly arranged at the left end of the preheating sensing groove 111 and a preheating upper limit touch ring 33 fixedly arranged at the right end of the preheating sensing groove 111, and a preheating display ring 32 arranged between the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 is slidably connected in the preheating sensing groove 111, and the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 can be detachably arranged in the preheating sensing groove 111 by means of threaded connection, thereby facilitating their disassembly, maintenance and replacement, and the input end of the preheating state acquisition unit is respectively connected to the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 signal, and the preheating state acquisition unit, the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 are respectively connected to the preheating state acquisition unit, the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 signal, and the preheating state acquisition unit, the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 are respectively connected to the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33 signal. The setting of the touch ring 31, the preheating display ring 32 and the preheating upper limit touch ring 33 can effectively sense and transmit the preheating state of the process gas. The left and right movement of the preheating display ring 32 can display the preheating state of the process gas in real time, effectively ensure the effectiveness of the preheating, and realize the verification and judgment of the preheating. In addition, the preheating data can be temperature compensated according to the temperature state of the process gas. In this way, while ensuring the effectiveness of the preheating, the difference between the process gas temperature and the chamber temperature can be dynamically maintained stable, effectively suppressing abnormal temperature difference fluctuations caused by chamber temperature fluctuations, eliminating the risk of sudden cooling when the process gas enters, and realizing accurate compensation and fine control of the reaction temperature.

[0024] Figure 3 - Figure 11 As shown, a preheating memory deformation strip 34 is fixedly connected between the preheating lower limit touch ring 31 and the preheating display ring 32. The preheating memory deformation strip 34 is made of a multi-segment memory alloy. Its thermal deformation temperature can be selected according to the preheating range, so that it can produce corresponding thermal elongation deformation and recovery deformation at different temperatures. For example, when the preheating temperature is 200-400°C, at least two temperature deformation points, 200°C and 400°C, are selected so that the preheating memory deformation strip 34 can produce corresponding elongation deformation at these two temperatures, thereby achieving the purpose of triggering the preheating temperature. A balancing spring 35 is fixedly connected between the preheating display ring 32 and the preheating upper limit touch ring 33, and the preheating memory deformation strip 34 and the balancing spring 35 are slidably sleeved on the outside of the triggering end of the preheating lower limit touch ring 31, the preheating display ring 32 and the preheating upper limit touch ring 33; When the preheating memory deformation strip 34 does not produce thermal elongation deformation, the spring coefficient of the balancing spring 35 is greater than the spring coefficient of the preheating memory deformation strip 34, causing the balancing spring 35 to be in an extended state and the preheating memory deformation strip 34 to be in a contracted state. At this time, the preheating display ring 32 moves to the left and abuts against the preheating lower limit contact ring 31. The temperature-sensitive deformation of the preheating memory deformation strip 34 and the elastic support of the balancing spring 35 can achieve real-time regulation of the preheating display ring 32, thereby effectively assisting in judging the display of the process gas preheating status, reducing the difficulty of data processing and judgment, and ensuring the effectiveness of subsequent temperature compensation.

[0025] Figure 3 - Figure 11 As shown, a heat exchange sensing groove 121 is opened on the right side of the inner wall of the air outlet channel 12, and the heat exchange sensing component 4 includes a heat exchange lower limit touch ring 41 fixedly arranged at the left end of the heat exchange sensing groove 121 and a heat exchange upper limit touch ring 43 fixedly arranged at the right end of the heat exchange sensing groove 121. A heat exchange display ring 42 arranged between the heat exchange lower limit touch ring 41 and the heat exchange upper limit touch ring 43 is slidably connected in the heat exchange sensing groove 121. The heat exchange lower limit touch ring 41 and the heat exchange upper limit touch ring 43 can be detachably arranged in the heat exchange sensing groove 121 by means of threaded connection, thereby facilitating their disassembly, maintenance and replacement. The input end of the heat exchange state acquisition unit is respectively connected to the heat exchange lower limit touch ring 41 and the heat exchange upper limit touch ring 43 for signal connection. The heat exchange state acquisition unit, The cooperation of the heat exchange lower limit touch ring 41, the heat exchange display ring 42 and the heat exchange upper limit touch ring 43 can effectively realize the sensing and triggering of the heat exchange data after the process gas flows through the vacuum reaction chamber 1, and can respond to the actual temperature state in the chamber, promote the subsequent temperature compensation control accuracy in the chamber, and ensure the quality of semiconductor wafers. At the same time, it can also effectively realize the dynamic display of the actual temperature difference between the preheating and the temperature in the chamber, and then can dynamically control the preheating temperature according to the actual temperature fluctuation in the chamber, maintain the stability of the difference between the process gas temperature and the chamber temperature, reduce the volatility of the temperature difference, effectively ensure the stability of the reaction temperature in the vacuum reaction chamber 1, and effectively promote the deposition quality of semiconductor wafers.

[0026] Figure 3 - Figure 11As shown, a heat exchange memory deformation strip 44 is fixedly connected between the heat exchange lower limit contact ring 41 and the heat exchange display ring 42. The heat exchange memory deformation strip 44 is also made of a multi-segment memory alloy. Its thermal deformation temperature can be selected according to the reaction temperature range in the chamber, so that it can produce corresponding thermal elongation deformation and recovery deformation at different temperatures. For example, when the temperature in the chamber is 200-600°C, at least two temperature deformation points, 200°C and 600°C, are selected so that the heat exchange memory deformation strip 44 can produce corresponding elongation deformation at these two temperatures, thereby achieving the purpose of triggering the heat exchange state of the process gas. An auxiliary spring 45 is fixedly connected between the heat exchange display ring 42 and the heat exchange upper limit contact ring 43, and the heat exchange memory deformation strip 44 and the auxiliary spring 45 are both slidably sleeved on the outside of the triggering end of the heat exchange lower limit contact ring 41, the heat exchange display ring 42 and the heat exchange upper limit contact ring 43; When the heat exchange memory deformation strip 44 does not produce thermal elongation deformation, the stiffness coefficient of the auxiliary spring 45 is greater than the stiffness coefficient of the heat exchange memory deformation strip 44, causing the auxiliary spring 45 to be in an elongated state and the heat exchange memory deformation strip 44 to be in a contracted state. At this time, the heat exchange display ring 42 moves to the left and abuts against the heat exchange lower limit contact ring 41. The balancing effect of the heat exchange memory deformation strip 44 and the auxiliary spring 45 can effectively ensure the effectiveness of the drive triggering of the heat exchange display ring 42, and can realize dual monitoring and control of the preheating temperature and the temperature in the chamber, realize the coordinated compensation of the preheating temperature and the temperature in the chamber, and dynamically maintain the difference between the process gas temperature and the chamber temperature stable, thereby realizing accurate compensation and fine control of the reaction temperature, and improving the performance of the temperature control system of the vacuum reaction chamber 1.

[0027] Figure 1 and Figure 2As shown, the output end of the temperature compensation processing unit is connected to the temperature difference prediction unit, and the output end of the temperature difference prediction unit is respectively connected to the temperature compensation processing unit and the temperature compensation unit signal. The temperature difference prediction unit can receive the trigger data of the preheating sensing component 3 and the heat exchange sensing component 4, as well as the temperature data in the vacuum reaction chamber 1, and then judge the change trend of the difference between the pre-preheating temperature and the temperature in the chamber based on the previous data, and then feed back the predicted trend data to the temperature compensation processing unit, and when the predicted trend develops in the direction of exceeding the limit, send corresponding compensation data to the temperature compensation unit, so that the temperature compensation unit can control the temperature control system or The preheating structure performs temperature compensation control to suppress the occurrence of temperature difference anomalies, maintain the stability of dynamic temperature difference regulation, reduce temperature difference fluctuations, and maintain the uniformity and stability of the temperature in the vacuum reaction chamber 1. The setting of the temperature difference prediction unit can predict the difference between the preheating temperature and the temperature in the chamber according to the trigger data of the preheating sensing component 3 and the heat exchange sensing component 4. It can timely coordinate and compensate the preheating temperature and the temperature in the chamber before the abnormality occurs, so as to eliminate the abnormality in advance, further ensure the stability of the difference and the stability of the temperature in the vacuum reaction chamber 1, and further ensure the deposition quality and accuracy of the semiconductor wafer.

[0028] Figure 1 and Figure 2As shown, the input end of the temperature compensation processing unit is also connected to a parameter setting unit and a chamber temperature acquisition unit. The input end of the parameter setting unit is signal-connected to a data port provided on the control box, and the input end of the chamber temperature acquisition unit is signal-connected to a temperature sensing probe provided in the vacuum reaction chamber 1. A technician can input relevant parameters related to the reaction of the semiconductor wafer in the vacuum reaction chamber 1 into the parameter setting unit through the data port. These parameters include but are not limited to the chamber temperature range, the preheating temperature range, the process gas injection method, the relevant parameters of the preheating structure, and the relevant parameter data of the temperature control system. The parameter setting unit then transmits these data to the temperature compensation processing unit to facilitate the subsequent judgment and compensation control function of the temperature compensation processing unit. The chamber temperature acquisition unit can perform point-type acquisition of the temperature of the vacuum reaction chamber 1 through the temperature sensing probe. The temperature compensation processing unit can control the reaction temperature in the vacuum reaction chamber 1 based on the temperature data, and perform corresponding temperature compensation for the temperature in the vacuum reaction chamber 1 and the preheating temperature based on the actual temperature data and the dynamic temperature difference data of the preheating sensing component 3 and the heat exchange sensing component 4. The output end of the temperature compensation processing unit is also connected to a temperature difference status display unit and a compensation abnormality unit. The output end of the temperature difference status display unit is connected to a display signal provided on the control box, and the output end of the compensation abnormality unit is connected to an alarm signal provided on the control box. The setting of the temperature acquisition unit in the chamber can effectively realize the monitoring function of the temperature in the vacuum reaction chamber 1. In combination with the functions of the preheating sensing component 3 and the heat exchange sensing component 4, it can effectively compensate for the point temperature data acquisition of the temperature sensing probe, realize the accurate judgment of temperature fluctuations, thereby promoting the accuracy and effectiveness of temperature compensation.

[0029] Figure 1 - Figure 11 As shown, during the operation of the vacuum reaction chamber 1, the preheating mechanism preheats the process gas in the process gas control system that needs to be injected into the vacuum reaction chamber 1 through the delivery pipe 21 and the gas outlet channel 12. As the preheated process gas gradually enters the gas outlet channel 12, the heat of the process gas is transferred to the preheating memory deformation strip 34. When the preheating temperature of the process gas does not reach the initial thermal deformation temperature of the preheating memory deformation strip 34, the preheating memory deformation strip 34 maintains its contraction effect, so that the elongation deformation effect of the balancing spring 35 can continuously drive the preheating display ring 32 to abut against the preheating lower limit contact ring 31. The preheating state acquisition unit can receive the lower limit trigger signal and transmit the signal to the temperature compensation processing unit, so that the temperature compensation processing unit controls the preheating structure according to the data of the lower limit trigger through the temperature compensation unit, compensates for the preheating temperature of the process gas, improves the preheating temperature and the preheating effect, thereby reducing the preheating temperature and the temperature inside the vacuum reaction chamber 1.

[0030] When the preheating memory deformation strip 34 senses the corresponding thermal deformation temperature and generates the corresponding elongation deformation, it drives the preheating display ring 32 to move to the right and compresses the balancing spring 35. At this time, the preheating display ring 32 and the preheating lower limit contact ring 31 are disconnected and triggered, and the preheating status acquisition unit can receive the disconnection data; When the preheating memory deformation strip 34 has not yet produced a complete thermal deformation and elongation effect, the preheating display ring 32 is located between the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33, and is neither in contact with the preheating lower limit touch ring 31 nor with the preheating upper limit touch ring 33. After receiving the double disconnection data of the preheating lower limit touch ring 31 and the preheating upper limit touch ring 33, the preheating state acquisition unit inputs the data into the temperature compensation processing unit. The temperature compensation processing unit determines, based on the feedback data, that the preheating effect of the preheating mechanism on the process gas is effective at this time. As the preheating temperature continues to rise, the preheating memory deformation strip 34 produces a complete thermal deformation and elongation effect. Driven by the preheating memory deformation strip 34, the preheating display ring 32 contacts the preheating upper limit touch ring 33. The preheating status acquisition unit receives the trigger data of the preheating upper limit and transmits it to the temperature compensation processing unit. The temperature compensation processing unit determines that the preheating effect of the pre-preheating structure on the process gas has reached the upper limit value at this time.

[0031] After the process gas is injected into the vacuum reaction chamber 1, it is discharged and recycled through the outlet channel 12 and the output pipe 22 after heat exchange with the temperature inside the vacuum reaction chamber 1. The temperature of the discharged process gas is transferred to the heat exchange memory deformation strip 44. When the heat exchange memory deformation strip 44 does not reach its initial thermal deformation temperature after absorbing heat, the heat exchange memory deformation strip 44 maintains its contracted deformation, and the elongated deformation of the auxiliary spring 45 drives the heat exchange display ring 42 to maintain continuous abutment with the heat exchange lower limit contact ring 41. The heat exchange state acquisition unit can receive the heat exchange lower limit data and transmit it to the temperature compensation processing unit. The temperature compensation processing unit judges the cause of the abnormal triggering of the heat exchange lower limit at this time based on the preheating state data transmitted by the preheating state acquisition unit and the temperature data of the vacuum reaction chamber 1 transmitted by the chamber temperature acquisition unit. When the preheating state data is displayed in the non-lower limit triggering state, it is judged that the temperature in the vacuum reaction chamber 1 is low at this time. The temperature compensation unit performs temperature compensation control on the temperature control system to promote the temperature effectiveness in the vacuum reaction chamber 1 and based on the temperature compensation unit. Based on the data fed back by the temperature acquisition unit in the chamber, the uniformity of the temperature in the vacuum reaction chamber 1 is judged, and then the temperature compensation unit acts on the temperature control system to perform high-precision regulation and compensation on the temperature in the vacuum reaction chamber 1; when the preheating state data shows a lower limit trigger state and the temperature acquisition unit in the chamber transmits that the temperature in the vacuum reaction chamber 1 is low, the temperature compensation unit synchronously controls the pre-preheating structure and the temperature control system to achieve the coordinated regulation and compensation of the pre-preheating temperature and the temperature in the chamber; when the preheating state data shows a lower limit trigger state and the temperature acquisition unit in the chamber transmits that the temperature in the vacuum reaction chamber 1 is within the standard range, the temperature compensation unit performs temperature compensation control on the pre-preheating structure to increase the pre-preheating temperature and avoid transient cooling caused by process gas injection.

[0032] When the heat exchange memory deformation strip 44 senses the corresponding thermal deformation temperature and generates a corresponding elongation deformation, the heat exchange memory deformation strip 44 can drive the heat exchange display ring 42 to move rightward and compress the auxiliary spring 45. At this time, the heat exchange display ring 42 and the heat exchange lower limit contact ring 41 are disconnected and triggered, and the heat exchange status acquisition unit can receive the disconnection data; When the heat exchange memory deformation strip 44 does not produce complete thermal deformation and elongation, the heat exchange display ring 42 is located between the heat exchange lower limit touch ring 41 and the heat exchange upper limit touch ring 43, and is neither in contact with the heat exchange lower limit touch ring 41 nor in contact with the heat exchange upper limit touch ring 43. After receiving the double disconnection data of the heat exchange lower limit touch ring 41 and the heat exchange upper limit touch ring 43, the heat exchange state acquisition unit inputs it into the temperature compensation processing unit. The temperature compensation processing unit judges the balance state of the difference between the preheating temperature and the temperature in the chamber at this time based on the data it receives. When the preheating state data shows that it is in the lower limit trigger state, it means that the preheating temperature is low and the temperature in the vacuum reaction chamber 1 is high. Then, the temperature compensation unit simultaneously performs temperature compensation control on the preheating structure and the temperature control system to increase the preheating temperature and reduce the chamber temperature. The internal temperature can reduce the difference between the preheating temperature and the temperature in the chamber, and at the same time reduce the energy loss during the operation of the vacuum reaction chamber 1; when the preheating status data shows that it is in the double disconnection state, it means that the preheating temperature and the temperature in the chamber are both within the effective range, and the difference reaches a balanced and effective state, and no subsequent regulation effect is produced; when the preheating status data shows that it is in the upper limit trigger state, it means that the preheating temperature is too high and the temperature in the chamber is low, then the temperature compensation unit is used to simultaneously perform temperature compensation control on the preheating structure and the temperature control system, reduce the preheating temperature, increase the temperature in the chamber, and realize the coordinated compensation effect of the preheating temperature and the temperature in the chamber, dynamically maintain the difference between the process gas temperature and the chamber temperature stable, and effectively suppress the abnormal temperature difference fluctuation caused by the fluctuation of the chamber temperature.

[0033] When the heat exchange memory deformation strip 44 produces a complete thermal deformation and elongation effect, the heat exchange display ring 42 can be driven to maintain contact with the heat exchange upper limit contact ring 43. The heat exchange state acquisition unit receives the trigger data of the heat exchange upper limit and transmits it to the temperature compensation processing unit. The temperature compensation processing unit judges the balance state of the difference between the preheating temperature and the temperature in the chamber at this time based on the data it receives. When the preheating state data shows that it is in the lower limit trigger state, it means that the preheating temperature at this time is low and the temperature in the vacuum reaction chamber 1 is extremely high. Then, the temperature compensation unit simultaneously performs temperature compensation control on the preheating structure and the temperature control system to increase the preheating temperature and reduce the temperature in the chamber. In addition, the alarm is activated by the compensation abnormality unit to issue an alarm reminder to the technician, and the semiconductor wafer is marked as a key mark for subsequent quality control. The amount of judgment is made to avoid the influence of sudden cooling caused by a large temperature difference on its quality; when the preheating status data shows that it is in a double-disconnected state, it means that the temperature in the vacuum reaction chamber 1 is relatively high at this time, and then the temperature control system is temperature compensated by the temperature compensation unit, and the temperature in the vacuum reaction chamber 1 is appropriately reduced to reduce the fluctuation of the temperature therein, while ensuring the deposition quality of the semiconductor wafer, reducing energy loss, and promoting the economy and environmental protection of the deposition process for the semiconductor wafer; when the preheating status data shows that it is in an upper limit state, it means that the pre-preheating temperature and the temperature in the vacuum reaction chamber 1 are both relatively high at this time, and then the pre-preheating structure and the temperature control system are temperature compensated at the same time to reduce the preheating temperature and the temperature in the chamber, so as to avoid the influence of excessive temperature on the quality of the semiconductor wafer and further reduce energy loss.

[0034] In addition, while the temperature compensation processing unit uses the temperature compensation unit to dynamically balance and regulate the pre-preheating temperature and the temperature in the chamber according to the data it receives, the temperature compensation processing unit also controls the display to display the change data of the preheating temperature and the temperature in the chamber in real time through the temperature difference status display unit. While being able to display the status in the vacuum reaction chamber 1 and facilitate technical personnel to monitor the status, it can also prompt technical personnel to optimize subsequent operating parameters according to temperature change data, continuously improve temperature control accuracy, provide excellent stability protection for the semiconductor wafer deposition process, and ensure high consistency of product quality.

[0035] Second implementation method: Figure 1 - Figure 11FIG1 shows a high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers. A delivery pipe 21 connected to the left end of the air inlet channel 11 is fixedly installed, and an output pipe 22 connected to the right end of the air outlet channel 12 is fixedly connected, and both the delivery pipe 21 and the output pipe 22 are coordinated with the process gas control system. Through the coordination of the delivery pipe 21, the output pipe 22 and the process gas control system, automatic control of the entry and exhaust of the process gas can be achieved, thereby meeting the requirements of semiconductor wafer deposition processing and promoting deposition quality.

[0036] Figure 1 and Figure 2 As shown, the input end of the temperature compensation processing unit is also connected to the operation status acquisition unit, and the input end of the operation status acquisition unit is connected to the process gas control system signal. The inlet channel 11 is also installed with an electrically controlled valve located on the right side of the preheating sensing tank 111. The output end of the temperature compensation processing unit is also connected to the intermittent release and heat preservation unit, and the output end of the intermittent release and heat preservation unit is connected to the electrically controlled valve signal. The configuration of the operation status acquisition unit can achieve the regulation of the accuracy and effectiveness of the pre-preheating effect according to different process gas injection methods. During continuous injection, real-time dynamic compensation is performed based on the continuous sensing data of the preheating sensing component 3 and the heat exchange sensing component 4. During intermittent injection, before the next injection, direct temperature compensation is performed on the pre-preheating based on the sensing data feedback of the heat exchange sensing component 4. Then, the effectiveness of the pre-preheating is judged based on the verification feedback of the preheating sensing component 3. Finally, according to the intermittent injection instruction, the intermittent release and heat preservation unit controls the electrically controlled valve to open and inject process gas into the vacuum reaction chamber 1, thereby ensuring the preheating temperature of the injected process gas and avoiding transient cooling.

[0037] Figure 1 - Figure 11 It is shown that during the operation of the vacuum reaction chamber 1, the operation status acquisition unit can collect data on the operation status of the process gas control system. Combined with the parameter data transmitted by the parameter setting unit, it can collect the injection method and injection cycle of the process gas, and then transmit it to the temperature compensation processing unit, so that the temperature compensation processing unit can coordinately regulate the pre-preheating temperature and the temperature in the chamber according to the operation mode of the process gas injection, thereby promoting the dynamic balance of the temperature difference. Combined with the cooperation of the intermittent release insulation unit and the electric control valve, it can achieve high-precision and low-energy compensation control of the balanced temperature difference, successfully eliminate the dynamic temperature difference disturbance in the gas injection process, and achieve accurate compensation and fine regulation of the reaction temperature. In addition, the setting of this device significantly improves the temperature control system performance of the vacuum reaction chamber 1.

[0038] In view of current actual needs, the protection scope of the above-mentioned implementation mode adopted in this application is not limited to this. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers, characterized by: The invention comprises a vacuum reaction chamber (1) and a temperature compensation system mounted in a control box of the vacuum reaction chamber (1), wherein the left end of the vacuum reaction chamber (1) is provided with an air inlet channel (11) connected thereto, and a preheating induction component (3) is provided in the air inlet channel (11), and the right end of the vacuum reaction chamber (1) is provided with an air outlet channel (12) connected thereto, and a heat exchange induction component (4) is provided in the air outlet channel (12); The temperature compensation system includes a temperature compensation processing unit, the input end of the temperature compensation processing unit is connected to the preheating state acquisition unit and the heat exchange state acquisition unit, and the output end of the temperature compensation processing unit is connected to the temperature compensation unit; The input end of the preheating state acquisition unit is connected to the preheating sensing component (3) for signal transmission, the input end of the heat exchange state acquisition unit is connected to the heat exchange sensing component (4) for signal transmission, and the output end of the temperature compensation unit is respectively connected to the temperature control system provided on the vacuum reaction chamber (1) and the preheating structure provided in the process gas control system for signal transmission; A preheating sensing groove (111) is provided on the left side of the inner wall of the air inlet channel (11). The preheating sensing assembly (3) includes a preheating lower limit touch ring (31) fixedly arranged at the left end of the preheating sensing groove (111) and a preheating upper limit touch ring (33) fixedly arranged at the right end of the preheating sensing groove (111). A preheating display ring (32) is slidably connected in the preheating sensing groove (111) and is arranged between the preheating lower limit touch ring (31) and the preheating upper limit touch ring (33). The input end of the preheating state acquisition unit is respectively connected to the preheating lower limit touch ring (31) and the preheating upper limit touch ring (33) for signals.

2. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: A preheating memory deformation strip (34) is fixedly connected between the preheating lower limit touch ring (31) and the preheating display ring (32), and a balancing spring (35) is fixedly connected between the preheating display ring (32) and the preheating upper limit touch ring (33), and the preheating memory deformation strip (34) and the balancing spring (35) are slidably sleeved on the outside of the trigger ends of the preheating lower limit touch ring (31), the preheating display ring (32) and the preheating upper limit touch ring (33); When the preheating memory deformation strip (34) does not generate thermal elongation deformation, the spring coefficient of the balancing spring (35) is greater than the spring coefficient of the preheating memory deformation strip (34), causing the balancing spring (35) to be in an elongated state and the preheating memory deformation strip (34) to be in a contracted state. At this time, the preheating display ring (32) moves to the left and contacts the preheating lower limit contact ring (31).

3. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: A heat exchange sensing groove (121) is provided on the right side of the inner wall of the air outlet channel (12). The heat exchange sensing assembly (4) includes a heat exchange lower limit touch ring (41) fixedly arranged at the left end of the heat exchange sensing groove (121) and a heat exchange upper limit touch ring (43) fixedly arranged at the right end of the heat exchange sensing groove (121). A heat exchange display ring (42) is slidably connected in the heat exchange sensing groove (121) and is arranged between the heat exchange lower limit touch ring (41) and the heat exchange upper limit touch ring (43). The input end of the heat exchange state acquisition unit is respectively connected to the heat exchange lower limit touch ring (41) and the heat exchange upper limit touch ring (43) for signals.

4. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 3, characterized in that: A heat exchange memory deformation strip (44) is fixedly connected between the heat exchange lower limit contact ring (41) and the heat exchange display ring (42), and an auxiliary spring (45) is fixedly connected between the heat exchange display ring (42) and the heat exchange upper limit contact ring (43), and the heat exchange memory deformation strip (44) and the auxiliary spring (45) are both slidably sleeved on the outside of the trigger ends of the heat exchange lower limit contact ring (41), the heat exchange display ring (42) and the heat exchange upper limit contact ring (43); When the heat exchange memory deformation strip (44) does not generate thermal elongation deformation, the stiffness coefficient of the auxiliary spring (45) is greater than the stiffness coefficient of the heat exchange memory deformation strip (44), causing the auxiliary spring (45) to be in an elongated state and the heat exchange memory deformation strip (44) to be in a contracted state. At this time, the heat exchange display ring (42) moves to the left and contacts the heat exchange lower limit contact ring (41).

5. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: The output end of the temperature compensation processing unit is connected to the temperature difference prediction unit, and the output end of the temperature difference prediction unit is respectively connected to the temperature compensation processing unit and the temperature compensation unit signal.

6. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: The left end of the air inlet channel (11) is fixedly mounted with a delivery pipe (21) connected thereto, and the right end of the air outlet channel (12) is fixedly connected with an output pipe (22) connected thereto, and both the delivery pipe (21) and the output pipe (22) are coordinated with a process gas control system.

7. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: The input end of the temperature compensation processing unit is also connected to an operation status acquisition unit, and the input end of the operation status acquisition unit is connected to the process gas control system signal. The air inlet channel (11) is also installed with an electric control valve located on the right side of the preheating induction tank (111). The output end of the temperature compensation processing unit is also connected to an intermittent release and heat preservation unit, and the output end of the intermittent release and heat preservation unit is connected to the electric control valve signal.

8. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: The input end of the temperature compensation processing unit is also connected to a parameter setting unit and a chamber temperature acquisition unit. The input end of the parameter setting unit is connected to a data port signal provided on a control box, and the input end of the chamber temperature acquisition unit is connected to a temperature sensing probe signal provided in a vacuum reaction chamber (1).

9. The high-precision vacuum reaction chamber temperature compensation device for semiconductor wafers according to claim 1, characterized in that: The output end of the temperature compensation processing unit is also connected to a temperature difference status display unit and a compensation abnormality unit. The output end of the temperature difference status display unit is connected to a display signal provided on a control box, and the output end of the compensation abnormality unit is connected to an alarm signal provided on the control box.

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