Measurement method and device, electronic equipment, measurement equipment and storage medium

Abstract

The invention provides a measurement method and apparatus, an electronic device, a measurement device and a storage medium. The method comprises the steps of obtaining a to-be-measured target parameter selected by a user; controlling a measuring device corresponding to the target parameter to measure a target parameter value of the initial point location on the sample based on the target parameter; controlling the X-ray fluorescence analysis equipment to detect the initial point location; calculating the theoretical fluorescence intensity of the initial point location based on the target parameter value and the calculation relation, determining the actual fluorescence intensity of the initial point location based on the first measurement spectrum, and establishing a mapping relation between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point location and the theoretical fluorescence intensity of the initial point location; calculating the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relation; the target parameter value of the measurement point is calculated based on the theoretical fluorescence intensity of the measurement point and the calculation relation, the method can be suitable for measurement of different types of target parameters, and the measurement efficiency can be improved.

Description

Technical Field

[0001] The present application belongs to the field of measurement technology, and in particular relates to a measurement method, device, electronic device, measurement equipment and storage medium. Background Art

[0002] In semiconductor manufacturing, accurate measurement of sample thickness and component concentrations, such as wafers, is crucial for ensuring product quality and performance. Currently, X-ray fluorescence (XRF), X-ray reflectivity (XRR), and X-ray diffraction (XRD) techniques are widely used for sample measurement. However, while standardless XRF analysis requires no standard sample, its results suffer from poor accuracy and repeatability, failing to meet the stringent standards of the semiconductor industry. While standard-based XRF analysis offers stable and accurate results, obtaining the standard requires separate equipment, which is cumbersome, costly, and inefficient. Furthermore, XRR technology can accurately and stably measure thickness but cannot be used for composition measurement. While XRD technology facilitates crystal type composition measurement, it has limitations for thickness measurement and is inefficient, making it difficult for a single technology to meet these requirements. Summary of the Invention

[0003] In view of this, the embodiments of the present application provide a measurement method, apparatus, electronic device, measurement equipment and storage medium, which can be applied to different types of target parameter measurements, can improve measurement efficiency, and meet the measurement needs of the semiconductor industry.

[0004] In a first aspect, an embodiment of the present application provides a measurement method, including: Get the target parameters to be tested selected by the user; Based on the target parameter, controlling a measuring device corresponding to the target parameter to measure a target parameter value at an initial point on a sample; controlling the X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; Calculating the theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determining the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity; Establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; When a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device is obtained, determining an actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculating a theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; The target parameter value of the measurement point is calculated based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0005] In some embodiments, when the target parameter includes thickness, controlling the measuring device corresponding to the target parameter to measure the target parameter value at an initial point on the sample based on the target parameter includes: Based on the thickness, an X-ray reflection device is controlled to measure a thickness value of an initial point on the sample.

[0006] In some embodiments, when the target parameter includes component concentration, controlling the measurement device corresponding to the target parameter to measure the target parameter value at the initial point on the sample based on the target parameter includes: Based on the component concentration, an X-ray diffraction device is controlled to measure the component concentration value at an initial point on the sample.

[0007] In some embodiments, when the target parameter includes thickness and component concentration, controlling the measurement device corresponding to the target parameter to measure the target parameter value at the initial point on the sample based on the target parameter includes: Calculating a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship; Based on the component concentration, an X-ray diffraction device is controlled to measure the component concentration value at an initial point on the sample.

[0008] In some embodiments, when there are multiple initial points, establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial points and the theoretical fluorescence intensity of the initial points includes: Fitting is performed based on the actual fluorescence intensity and theoretical fluorescence intensity of each initial point to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity.

[0009] In some embodiments, the method further comprises: Obtaining the light source angle of the incident light source of the measuring device corresponding to the target parameter; The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the light source angle.

[0010] In a second aspect, an embodiment of the present application provides a measuring device, comprising: The acquisition module is used to obtain the target parameters to be measured selected by the user; A first measurement module is configured to control a measurement device corresponding to the target parameter to measure a target parameter value at an initial point on a sample based on the target parameter; a second measurement module, configured to control the X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; a first determination module, configured to calculate a theoretical fluorescence intensity at the initial point based on the target parameter value and a calculation relationship, and determine an actual fluorescence intensity at the initial point based on the first measured spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity; An establishing module, configured to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; a second determination module configured to, upon obtaining a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device, determine an actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculate a theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; A calculation module is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0011] In a third aspect, an embodiment of the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements any of the above-described methods when executing the computer program.

[0012] In a fourth aspect, an embodiment of the present application provides a measuring device, comprising the electronic device, X-ray reflection device, X-ray diffraction device and X-ray fluorescence analysis device described in the third aspect, wherein the electronic device is communicatively connected to the X-ray reflection device, X-ray diffraction device and X-ray fluorescence analysis device.

[0013] In a fifth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, it implements any of the methods described above.

[0014] In a sixth aspect, an embodiment of the present application provides a computer program product, which, when executed on a terminal device, enables the electronic device to execute any of the methods described above.

[0015] Compared with the prior art, the embodiments of the present application have the following beneficial effects: A measurement method provided in an embodiment of the present application obtains a target parameter to be measured selected by a user; controls a measuring device corresponding to the target parameter to measure the target parameter value of an initial point on a sample based on the target parameter; controls an X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; calculates a theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determines an actual fluorescence intensity of the initial point based on the first measurement spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity; establishes a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial point based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; when a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device is obtained, determines the actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculates the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; calculates the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship. The method is applicable to different types of target parameter measurements, can improve measurement efficiency, and meet the measurement needs of the semiconductor industry. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 A schematic diagram of the structure of a measurement system provided in an embodiment of the present application; Figure 2 A schematic diagram of the implementation flow of a measurement method provided for the implementation of this application; Figure 3 A schematic diagram of a process for determining target parameters of an initial point provided in an embodiment of the present application; Figure 4 A schematic diagram of another process for determining target parameters of an initial point provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of a measuring device provided in an embodiment of the present application; Figure 6 A flow chart of a measurement method provided in an embodiment of the present application; Figure 7 A schematic structural diagram of a measuring device provided in an embodiment of the present application; Figure 8 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0018] In the following description, specific details such as specific system structures and techniques are provided for purposes of illustration rather than limitation to facilitate a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid obscuring the description of the present application with unnecessary detail.

[0019] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or collections thereof.

[0020] It will also be understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0021] As used in this specification and the appended claims, the term "if" can be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if it is detected" can be interpreted as meaning "upon determining" or "in response to determining" or "upon detecting" or "in response to detecting," depending on the context.

[0022] In addition, in the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0023] References to "one embodiment" or "some embodiments" in this specification mean that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, phrases such as "in one embodiment," "in some embodiments," "in other embodiments," and "in yet other embodiments" appearing in various places in this specification do not necessarily refer to the same embodiment, but rather mean "one or more but not all embodiments," unless otherwise specifically emphasized.

[0024] Based on the problems in the related art, the embodiments of the present application provide a measurement method that can be applied to electronic devices. The electronic devices may include: mobile phones, tablet computers, wearable devices, augmented reality (AR) / virtual reality (VR) devices, laptops, ultra-mobile personal computers (UMPCs), netbooks, and personal digital assistants (PDAs). The embodiments of the present application do not impose any restrictions on the specific types of electronic devices. Figure 1 A schematic diagram of the structure of a measurement system provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the measurement system includes: an electronic device, an X-ray reflection device, an X-ray diffraction device and an X-ray fluorescence analysis device, and the electronic device is communicatively connected with the X-ray reflection device, the X-ray diffraction device and the X-ray fluorescence analysis device. Figure 2 A flow chart of a measurement method provided for the implementation of this application is shown in FIG. Figure 2 As shown, the measurement methods include: Step S101: obtaining the target parameter to be measured selected by the user.

[0025] In the embodiments of this application, the user refers to the operator using the measurement method to perform sample testing, and may be a scientific researcher, a production quality inspector, or the like. The target parameter to be measured is a characteristic indicator of the sample determined based on specific measurement requirements. For example, in semiconductor wafer measurement, the target parameter may be the wafer thickness, the composition concentration of each element in the wafer, etc.

[0026] In an embodiment of the present application, a list of target parameters to choose from can be presented to the user via a human-computer interaction interface (e.g., an operating interface on a computer screen). The user can select or enter the target parameter to be measured from the list based on the actual measurement task. For example, a measurement software interface may list options such as "thickness" and "component concentration." The user can click on the corresponding option to complete the selection, thereby obtaining the target parameter to be measured selected by the user.

[0027] Step S102 : Based on the target parameter, controlling a measuring device corresponding to the target parameter to measure a target parameter value at an initial point on a sample.

[0028] In the embodiments of the present application, different target parameters require the use of different measuring devices to obtain accurate data. For example, thickness may be measured using an X-ray reflection device; elemental component concentration may be measured using an X-ray diffraction device, etc. The initial point is a measurement position pre-set on the sample surface. The initial point can be one point or multiple points. When the initial point is one point, it can be the center position of the sample. When the initial point is multiple points, the selection of these points usually needs to consider factors such as the uniformity and representativeness of the sample. For example, for a square thin film sample, an initial point can be set at each of its four corners and the center. In some embodiments, the initial point can also be a randomly selected point.

[0029] In embodiments of the present application, the corresponding measuring device can be automatically identified and activated based on the target parameter selected by the user. After the sample is placed on the sample stage, the measuring device can be controlled to measure the initial point. For example, if the target parameter is thickness and an X-ray reflectometer is selected, the X-ray source and detector of the X-ray reflectometer are controlled to align with the initial point, X-rays are emitted, and reflected signals are received. The thickness is calculated by analyzing information such as the intensity and angle of the reflected signals.

[0030] Step S103: controlling the X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point.

[0031] In the embodiments of this application, an X-ray fluorescence analyzer uses X-rays to excite atoms in a sample, knocking out inner-shell electrons and creating holes. When outer-shell electrons jump to fill the holes, they emit characteristic X-ray fluorescence. The energy and intensity of this fluorescence can be detected by measuring the spectrum. The first measured spectrum is a curve showing the fluorescence intensity versus energy distribution obtained by the X-ray fluorescence analyzer at the initial point.

[0032] In this embodiment of the present application, a control command can be sent to the X-ray fluorescence analysis device, causing its X-ray source to emit X-rays at an initial point. Atoms in the sample are excited and emit X-ray fluorescence. The detector receives this fluorescence signal and converts it into an electrical signal. After signal processing and amplification, the electrical signal is converted into a digital signal, ultimately generating a first measurement spectrum.

[0033] Step S104 , calculating the theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determining the actual fluorescence intensity of the initial point based on the first measurement spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity.

[0034] In the embodiments of the present application, the theoretical fluorescence intensity is a fluorescence intensity value derived based on the known target parameter value and a certain physical model and calculation formula. It reflects the fluorescence intensity that the sample should produce under ideal conditions when the target parameter is given. The actual fluorescence intensity is a fluorescence intensity value directly read from the first measurement spectrum or obtained through a certain data processing method. It reflects the true fluorescence intensity produced by the sample in the actual measurement. The calculation relationship is a formula or model that describes the mathematical relationship between the target parameter and the theoretical fluorescence intensity. For example, for certain elements, their theoretical fluorescence intensity may have a specific functional relationship with factors such as the element concentration and film thickness.

[0035] In the embodiment of the present application, the target parameter value obtained by measurement can be substituted into the formula for calculation according to the pre-established calculation relationship. For example, if the calculation relationship is I 理论 = k × C × d (in, I 理论 is the theoretical fluorescence intensity, k is a constant, C is the element concentration, d is the thickness), the measured C and d The theoretical fluorescence intensity can be calculated by substituting the value into the formula.

[0036] In the embodiments of the present application, the first measured spectrum is analyzed to determine the actual fluorescence intensity by finding the fluorescence peak intensity at a specific energy position. For example, for the characteristic X-ray fluorescence of silicon, the peak at the corresponding energy position is found in the spectrum, and the intensity of the peak is read as the actual fluorescence intensity of silicon at the initial position.

[0037] Step S105 : establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point.

[0038] In the embodiments of the present application, the mapping relationship is a mathematical model that establishes a corresponding relationship between the actual fluorescence intensity value and the theoretical fluorescence intensity value. It can be a simple linear relationship or a complex nonlinear relationship to describe the intrinsic connection between the two.

[0039] In the embodiments of the present application, if a linear relationship exists between the actual fluorescence intensity and the theoretical fluorescence intensity, a least squares method can be used for linear fitting. Data pairs (xi, yi) of the actual fluorescence intensity and the theoretical fluorescence intensity at multiple initial locations (where xi is the actual fluorescence intensity and yi is the theoretical fluorescence intensity) can be collected, and fitting can be performed based on the actual fluorescence intensity and the theoretical fluorescence intensity at each initial location to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity. During the fitting, the coefficients a and b in the linear equation y = ax + b can be solved by minimizing the sum of squared errors, thereby establishing a mapping relationship.

[0040] For nonlinear relationships, methods such as polynomial fitting and neural networks can be used to establish mapping relationships. For example, when using a neural network, the actual fluorescence intensity is used as input and the theoretical fluorescence intensity is used as output. Through training with a large amount of data, the neural network can learn the complex mapping relationship between the two.

[0041] In some embodiments, if the initial point is a single point, a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity can also be established. In many cases, there may be an approximate linear relationship between the actual fluorescence intensity and the theoretical fluorescence intensity. Even if there is only one data point at a preset point, it can be assumed that this linear relationship holds. y = ax + b (in y represents the theoretical fluorescence intensity, x represents the actual fluorescence intensity, a and b is a coefficient to be determined). The actual fluorescence intensity measured at this preset point is x 0 and theoretical fluorescence intensity y 0 is substituted into the assumed linear equation. Since there is only one equation, it is not possible to directly determine a and b For example, if it is known that under certain standard conditions, when the actual fluorescence intensity is 0, the theoretical fluorescence intensity is also close to 0 (i.e. b =0), then the equation can be simplified to y = ax , and then calculate the coefficient a , thus establishing a simple linear correspondence.

[0042] Step S106: When a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis equipment is obtained, the actual fluorescence intensity of the measurement point is determined based on the second measurement spectrum, and the theoretical fluorescence intensity of the measurement point is calculated based on the actual fluorescence intensity of the measurement point and the mapping relationship.

[0043] In the present embodiment, measurement points are locations on the sample surface that require measurement, in addition to the initial point. Measuring these points further provides insights into the overall distribution of sample characteristics. The second measurement spectrum is a fluorescence spectrum obtained by X-ray fluorescence analysis equipment at the measurement point. Similar to the first measurement spectrum, it reflects the distribution of fluorescence intensity versus energy at the measurement point.

[0044] In this embodiment of the present application, a control command can be sent to the X-ray fluorescence analysis device, causing its X-ray source to emit X-rays at the measurement point. Atoms in the sample are excited and emit X-ray fluorescence. The detector receives this fluorescence signal and converts it into an electrical signal. After signal processing and amplification, the electrical signal is converted into a digital signal, ultimately generating a second measurement spectrum.

[0045] In the embodiment of the present application, the second measurement spectrum can be analyzed, and the fluorescence peak intensity at a specific energy position can be read as the actual fluorescence intensity at the measurement point.

[0046] In the embodiment of the present application, the actual fluorescence intensity of the measurement point can be substituted into the established mapping relationship for calculation. For example, if the mapping relationship is y = ax + b , the actual fluorescence intensity x Substitute the formula to calculate the theoretical fluorescence intensity y .

[0047] Step S107 : calculating a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0048] In the embodiment of the present application, the process of calculating the target parameter value is opposite to that of calculating the theoretical fluorescence intensity of the initial point. According to the pre-established calculation relationship, the calculated theoretical fluorescence intensity of the measurement point is substituted into the formula to solve the target parameter value. For example, for the formula I 理论 = k × C × d , if known I 理论 、 k and d , the element concentration can be calculated by C .

[0049] The method provided in the embodiments of the present application does not rely solely on direct measurement results from X-ray fluorescence (XRF) equipment, but instead incorporates theoretical fluorescence intensities calculated based on target parameter values. By comparing and mapping actual fluorescence intensities with theoretical fluorescence intensities, the method comprehensively considers the impact of multiple factors on fluorescence intensity, reduces the potential errors associated with a single measurement method, and significantly improves the accuracy of target parameter values ​​at the measurement points. Data from pre-set points provides a reliable foundation for constructing a mapping relationship, enabling this mapping relationship to more accurately reflect the inherent relationship between actual and theoretical fluorescence intensities, thereby ensuring the accuracy of subsequent target parameter calculations at measurement points. Traditional methods may require multiple measurements using different equipment to meet different measurement requirements, or require cumbersome operations to obtain accurate standard sample information. The method provided in the embodiments of the present application, however, establishes a mapping relationship by controlling the measurement equipment corresponding to the target parameter to measure the target parameter value at the initial point, and then using the XRF equipment to detect the pre-set points. Subsequent XRF detection of the measurement points is then performed and the target parameter value is calculated using the established mapping relationship, significantly reducing the number of repeated measurements and improving overall measurement efficiency. After obtaining the second measurement spectrum of the measurement point, the actual fluorescence intensity can be quickly determined based on the spectrum, and the target parameter value of the measurement point can be quickly calculated using the pre-established mapping relationship and calculation relationship. The entire calculation process is relatively concise and efficient, without the need for complex algorithms and long waits, which helps to obtain measurement results in a timely manner during production or research. The traditional XRF analysis method with standard samples requires the preparation of a large number of standard samples, while the method provided in the embodiment of the present application reduces the dependence on standard samples by establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity, and reduces the manpower, material resources and time costs required in the preparation of standard samples. The method provided in the embodiment of the present application can be applied to different types of target parameter measurements, whether it is film thickness, component concentration or other parameters related to fluorescence intensity, it is only necessary to control the corresponding measuring equipment according to the corresponding target parameter for measurement, and establish the corresponding calculation relationship and mapping relationship. It has strong versatility and flexibility, and can meet the needs of different fields and different measurement scenarios.

[0050] In some embodiments, when the target parameter includes thickness, Figure 3 A flow chart of determining target parameters of an initial point provided in an embodiment of the present application is shown as follows: Figure 3 As shown, step S102 can be implemented by the following steps: Step S1021 : controlling an X-ray reflection device to measure a thickness value of an initial point on a sample based on the thickness.

[0051] In the embodiment of the present application, the X-ray reflection device is an instrument that uses the reflection phenomenon generated by the interaction between X-rays and matter to measure sample-related parameters. X-rays have high energy and short wavelengths. When they irradiate the sample surface, they will be reflected on the sample surface. The intensity and angle of reflection are closely related to the surface structure, thickness and other parameters of the sample. In the embodiment of the present application, it is based on the total reflection and interference effect of X-rays on the sample surface. When X-rays are incident on the sample surface at an angle less than the critical angle, total reflection will occur; and sample layers of different thicknesses will cause interference between the reflected X-rays. By analyzing the intensity distribution of the reflected X-rays, the thickness information of the sample can be obtained.

[0052] In the embodiment of the present application, a suitable range of incident angles can be set according to the expected thickness of the sample and the characteristics of the X-rays. The choice of incident angle will affect the intensity and interference effect of the reflected X-rays. Generally speaking, for thinner samples, a smaller range of incident angles needs to be selected to obtain a more obvious interference signal; for thicker samples, the range of incident angles can be appropriately increased. The range of incident angles can be determined by theoretical calculations or by reference to measurement experience of similar samples. For example, for thin film samples with a thickness of tens of nanometers, the range of incident angles can be set between 0.1° and 2°.

[0053] In some embodiments, when the target parameter includes component concentration, step S102 can be implemented by the following steps: Step S1022 : controlling the X-ray diffraction device to measure the component concentration value at the initial point on the sample based on the component concentration.

[0054] In the embodiments of this application, an X-ray diffraction device is an instrument that uses the diffraction phenomenon produced by the interaction of X-rays with matter to analyze the crystal structure and composition of a sample. X-rays exhibit wave-particle duality. When they strike a crystal sample, the atoms or molecules within the crystal scatter the X-rays. These scattered waves interfere with each other, forming a specific diffraction pattern. By analyzing the diffraction pattern, information about the sample's crystal structure can be obtained, and the concentrations of its components can be inferred.

[0055] In some embodiments, when the target parameters include thickness and component concentration, Figure 4 Another flow chart of determining target parameters provided in the embodiment of the present application is as follows: Figure 4 As shown, step S102 can be implemented by the following steps: Step S1023, calculating a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship; Step S1024 : controlling the X-ray diffraction device to measure the component concentration value at the initial point on the sample based on the component concentration.

[0056] In the embodiment of the present application, the implementation method of step S1023 can refer to step S1021, and the implementation method of step S1024 can refer to step S1024.

[0057] In some embodiments, during the process of controlling the measuring device to perform measurement, the method further includes: Get the light source angle of the incident light source of the measurement device corresponding to the target parameter.

[0058] In the embodiment of the present application, the light source angle of the incident light source can be measured by a goniometer.

[0059] The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the light source angle.

[0060] The angle of the incident light source of the measuring device corresponding to the target parameter can be adjusted according to the detected light source angle.

[0061] Based on the aforementioned measurement method, an embodiment of the present application provides a measurement device, Figure 5 A schematic diagram of the structure of a measuring device provided in an embodiment of the present application is shown in FIG. Figure 5 As shown, the measurement equipment includes an X-ray reflectometry instrument, an X-ray diffraction instrument, and an X-ray fluorescence analysis instrument. The X-ray reflectometry instrument includes an XRR light source and an XRR area detector, the X-ray diffraction instrument includes an XRD light source and an XRD area detector, and the X-ray fluorescence analysis instrument includes an XRF light source and an XRF detector. The XRF light source is fixed, while the XRR / XRD light source can vary the incident light angle. Two light sources are located on two parallel vertical surfaces. The XRF light source remains fixed, while the XRR / XRD light source can vary the incident light angle within the vertical surface. This variation is achieved using a goniometer. The XRF detector is fixed, while the XRR / XRD area detector can vary its angle. When a sample is placed on the sample stage, the XRR / XRD light source can be adjusted to vary the incident light angle, causing the sample to reflect / diffract. This allows the XRR / XRD area detector to detect the reflection / diffraction spectrum and calculate the target parameter value. The XRF light source can also cause the sample to generate fluorescence, which the XRF detector detects to obtain the measurement spectrum. This measurement equipment utilizes a three-in-one XRF, XRD, and XRR instrument, combining these three technologies to address issues with obtaining XRF standards, addressing the limitations of XRR and XRD techniques, and addressing XRD measurement efficiency. By combining XRR and XRD technologies to provide standard information for XRF measurement, the system achieves the accuracy, stability, and efficiency required for thin film thickness and composition measurements.

[0062] Figure 6 A flow chart of a measurement method provided in an embodiment of the present application is shown as follows: Figure 6Shown, including: Step S401: XRR measures the initial point.

[0063] In the embodiment of the present application, XRR measurement can be used on the initial point and analyzed to obtain the thickness information of the point.

[0064] Step S402: XRD measurement of the initial point.

[0065] In the embodiment of the present application, XRD is used to measure and analyze the initial point to obtain the concentration information of each component at the point.

[0066] Step S403: Use XRF to measure the initial point to obtain an XRF measurement spectrum.

[0067] Step S404: generating a mapping relationship based on the XRF measurement spectrum, thickness information, and component concentration.

[0068] Step S405: XRF measures other points and processes the data.

[0069] In the embodiment of the present application, the thickness or component concentration of multiple points on the wafer can be measured.

[0070] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0071] According to the aforementioned embodiments, the embodiments of the present application provide a measuring device, wherein the modules included in the device and the units included in each module can be implemented by a processor in a computer device; of course, they can also be implemented by a specific logic circuit; during implementation, the processor can be a central processing unit (CPU), a microprocessor (MPU), a digital signal processor (DSP), or a field programmable gate array (FPGA), etc.

[0072] The embodiment of the present application provides a measuring device, Figure 7 A schematic diagram of the structure of a measuring device provided in an embodiment of the present application is shown in FIG. Figure 7 As shown, the measuring device 500 includes: An acquisition module 501 is used to acquire the target parameter to be measured selected by the user; A first measurement module 502 is configured to control a measurement device corresponding to the target parameter to measure a target parameter value at an initial point on a sample based on the target parameter; A second measurement module 503 is configured to control the X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; a first determining module 504 configured to calculate a theoretical fluorescence intensity at the initial point based on the target parameter value and a calculation relationship between the target parameter and the theoretical fluorescence intensity, and to determine an actual fluorescence intensity at the initial point based on the first measured spectrum; An establishing module 505 is configured to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; a second determining module 506 for determining, upon obtaining a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device, an actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculating a theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; The calculation module 507 is configured to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0073] In some embodiments, when the target parameter includes thickness, the first measurement module 502 includes: The first control unit is configured to control the X-ray reflection device to measure the thickness value of an initial point on the sample based on the thickness.

[0074] In some embodiments, when the target parameter includes component concentration, the first measurement module 502 includes: The second control unit is used to control the X-ray diffraction device to measure the component concentration value of the initial point on the sample based on the component concentration.

[0075] In some embodiments, when the target parameters include thickness and component concentration, the first measurement module 502 includes: a first control unit, configured to calculate a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship; The second control unit is used to control the X-ray diffraction device to measure the component concentration value of the initial point on the sample based on the component concentration.

[0076] In some embodiments, when there are multiple initial points, establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial points and the theoretical fluorescence intensity of the initial points includes: Fitting is performed based on the actual fluorescence intensity and theoretical fluorescence intensity of each initial point to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity.

[0077] In some embodiments, the measuring device 500 further includes: An angle acquisition module, used to obtain the light source angle of the incident light source of the measuring device corresponding to the target parameter; The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the light source angle.

[0078] It should be noted that the information interaction, execution process, etc. between the above-mentioned devices / units are based on the same concept as the method embodiment of the present application. Their specific functions and technical effects can be found in the method embodiment section and will not be repeated here.

[0079] In addition, the measuring device shown above may be a software unit, a hardware unit, or a combination of software and hardware. It may also be integrated into an electronic device as an independent pendant, or exist as an independent terminal device.

[0080] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0081] Figure 8 This is a schematic diagram of the structure of the electronic device provided in the embodiment of the present application. Figure 8 As shown, the electronic device 3 of this embodiment may include: at least one processor 30 ( Figure 8 Only one processor 30 is shown in the figure), a memory 31, and a computer program 32 stored in the memory 31 and executable on at least one processor 30. When the processor 30 executes the computer program 32, the steps in any of the above-mentioned method embodiments are implemented, or when the processor 30 executes the computer program 32, the functions of the modules / units in the above-mentioned apparatus or system embodiments are implemented.

[0082] Exemplarily, the computer program 32 may be divided into one or more modules / units, one or more of which are stored in the memory 31 and executed by the processor 30 to implement the present application. The one or more modules / units may be a series of computer program 32 instruction segments capable of performing specific functions, and the instruction segments are used to describe the execution process of the computer program 32 in the electronic device 3.

[0083] The embodiment of the present application further provides a computer-readable storage medium, which stores a computer program 32. When the computer program 32 is executed by the processor 30, the steps in the above-mentioned method embodiments can be implemented.

[0084] An embodiment of the present application provides a computer program product. When the computer program product is run on an electronic device, the electronic device can implement the steps in the above-mentioned method embodiments when executing the computer program product.

[0085] If the integrated unit is implemented as a software functional unit and sold or used as a standalone product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the process steps in the above-mentioned method embodiments can be implemented by computer program 32 instructing the relevant hardware. Computer program 32 can be stored in a computer-readable storage medium. When executed by processor 30, computer program 32 can implement the steps of each of the above-mentioned method embodiments. Computer program 32 includes computer program code, which can be in source code form, object code form, executable file, or some intermediate form. Computer-readable media can include at least: any entity or device capable of carrying computer program code to a terminal, recording media, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signals, telecommunication signals, and software distribution media. Examples include USB flash drives, removable hard drives, magnetic disks, or optical disks. In some jurisdictions, based on legislation and patent practice, computer-readable media cannot be electric carrier signals or telecommunication signals.

[0086] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant description of other embodiments.

[0087] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0088] In the embodiments provided in this application, it should be understood that the disclosed devices / network equipment and methods can be implemented in other ways. For example, the device / network equipment embodiments described above are merely illustrative. For example, the division of the modules or units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0089] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0090] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. A measurement method, characterized in that: include: Get the target parameters to be tested selected by the user; Based on the target parameter, controlling a measuring device corresponding to the target parameter to measure a target parameter value at an initial point on a sample; controlling an X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; Calculating the theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determining the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity; Establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; When a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device is obtained, determining an actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculating a theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; The target parameter value of the measurement point is calculated based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

2. The method according to claim 1, characterized in that In the case where the target parameter includes thickness, controlling the measuring device corresponding to the target parameter to measure the target parameter value at the initial point on the sample based on the target parameter includes: Based on the thickness, an X-ray reflection device is controlled to measure a thickness value of an initial point on the sample.

3. The method according to claim 1, characterized in that In the case where the target parameter includes component concentration, controlling the measuring device corresponding to the target parameter to measure the target parameter value at the initial point on the sample based on the target parameter includes: Based on the component concentration, an X-ray diffraction device is controlled to measure the component concentration value at an initial point on the sample.

4. The method according to claim 1, wherein In the case where the target parameter includes thickness and component concentration, controlling the measuring device corresponding to the target parameter to measure the target parameter value at the initial point on the sample based on the target parameter includes: Calculating a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship; Based on the component concentration, an X-ray diffraction device is controlled to measure the component concentration value at an initial point on the sample.

5. The method according to claim 1, wherein In the case where there are multiple initial points, establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial points and the theoretical fluorescence intensity of the initial points includes: Fitting is performed based on the actual fluorescence intensity and theoretical fluorescence intensity of each initial point to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity.

6. The method according to claim 1, characterized in that The method further comprises: Obtaining the light source angle of the incident light source of the measuring device corresponding to the target parameter; The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the light source angle.

7. A measuring device, characterized in that: include: The acquisition module is used to obtain the target parameters to be measured selected by the user; A first measurement module is configured to control a measurement device corresponding to the target parameter to measure a target parameter value at an initial point on a sample based on the target parameter; a second measurement module, configured to control an X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; a first determination module, configured to calculate a theoretical fluorescence intensity at the initial point based on the target parameter value and a calculation relationship, and determine an actual fluorescence intensity at the initial point based on the first measured spectrum, wherein the calculation relationship is a calculation relationship between the target parameter and the theoretical fluorescence intensity; An establishing module, configured to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; a second determination module configured to, upon obtaining a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device, determine an actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculate a theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; A calculation module is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the method according to any one of claims 1 to 6 is implemented.

9. A measuring device, characterized in that The device comprises the electronic device according to claim 8, an X-ray reflection device, an X-ray diffraction device and an X-ray fluorescence analysis device, wherein the electronic device is communicatively connected with the X-ray reflection device, the X-ray diffraction device and the X-ray fluorescence analysis device.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

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