Gas insulated equipment partial discharge optical signal simulation method and system based on nano quantum photosensitive material

Abstract

This invention relates to a method and system for simulating the optical signals of partial discharge in gas-insulated equipment based on nano-quantum photosensitive materials. The method includes: acquiring partial discharge optical signals and extracting spectral features; constructing a multi-wavelength ultraviolet LED array (280nm, 310nm, 355nm, 395nm) and using nanosecond-level pulse drive to simulate transient characteristics; optimizing the configuration of a ZnCdS, CdSe, and CdTe nano-quantum photosensitive composite solution and preparing a 50-200nm nano-quantum photosensitive film via spin coating; and integrating the LED array and the nano-quantum photosensitive film to form a simulation system. This invention innovatively combines the optical properties of nano-quantum photosensitive materials with a multi-wavelength LED array to achieve high-precision simulation of the full-band spectrum of partial discharge, solving the problems of high risk and high cost in traditional high-voltage discharge experiments. This system can safely simulate the discharge spectra of various insulation defects under normal pressure, providing a reliable platform for the research and calibration of partial discharge optical detection equipment.

Description

Technical Field

[0001] This invention belongs to the field of high-voltage power equipment condition monitoring technology, specifically relating to a method for simulating partial discharge optical signals in gas-insulated switchgear (GIS) based on nano-quantum photosensitive materials. This method combines the optical properties of nano-quantum photosensitive materials with a multi-wavelength ultraviolet LED array to simulate the ultraviolet to near-infrared optical signals generated by partial discharge in GIS equipment, providing a safe and stable experimental environment for the calibration of partial discharge detection equipment, the development of optical signal analysis methods, and the verification of system performance. Background Technology

[0002] Gas-insulated switchgear (GIS) is widely used in high-voltage power transmission and transformation projects due to its excellent insulation and compact design. GIS is typically filled with SF6 gas as both insulation and arc-quenching gas. However, during long-term operation, manufacturing defects, aging, or mechanical stress can lead to internal insulation deterioration, causing partial discharge. Partial discharge not only accelerates the damage to insulation materials but can also ultimately cause equipment failure, threatening the safe and stable operation of the power grid.

[0003] Currently, the mainstream methods for detecting partial discharge in GIS mainly involve capturing electrical, magnetic, and acoustic signals. Corresponding detection methods include pulsed current methods, ultrasonic detection methods, and ultra-high frequency detection methods, but these methods have certain limitations. In contrast, photometric methods based on the ionization and luminescence mechanism during partial discharge have the advantages of being non-contact, highly sensitive, and highly resistant to interference, making them a research hotspot in recent years. During partial discharge, SF6 gas and impurity molecules undergo excitation and ionization reactions under the accelerated electron bombardment in a strong electric field, releasing radiation signals including ultraviolet, visible, and even near-infrared bands, with a particularly noticeable characteristic peak in the ultraviolet region.

[0004] However, directly applying high voltage inside GIS equipment to generate a real partial discharge process poses extremely high safety hazards and operational risks.

[0005] Therefore, there is a need for an optical signal simulation technology that can accurately reconstruct the typical spectral characteristics of partial discharge under normal pressure and low-risk conditions, in order to replace the actual discharge process and be used for performance evaluation of detection equipment, algorithm verification, and system calibration. Summary of the Invention

[0006] This invention addresses the problems of high experimental risk and insufficient spectral simulation accuracy in existing optical detection technologies for partial discharge in gas-insulated switchgear (GIS). It proposes a method and system for simulating optical signals of partial discharge in GIS based on nano-quantum photosensitive technology. This method can simulate the optical signals generated by partial discharge in both the time and frequency domains, providing a safe and stable experimental environment for partial discharge optical experiments.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] A method for simulating the optical signal of partial discharge in a gas-insulated device based on nano-quantum photosensitive materials, characterized by the following steps:

[0009] S1. Acquire raw optical signals I generated by different types of partial discharge in GIS equipment. raw (t), perform a fast Fourier transform to obtain the spectrum F(ω), and then normalize it to obtain the target simulated spectrum I. norm (λ);

[0010] S2. Based on the target simulated spectrum obtained in step S1, construct a multi-wavelength ultraviolet LED array. The array includes three types of LEDs: 280nm, 310nm, and 355nm, used to simulate native ultraviolet radiation, and a 395nm LED used to excite nano-quantum photosensitive light. The 395nm LED constitutes an independent excitation region, and the LEDs of the other wavelength bands are distributed in an alternating and mixed manner to improve spectral continuity.

[0011] S3. Based on the target spectrum obtained in step S1, determine the ratio of ZnCdS, CdSe and CdTe using a weighted integral model to prepare a nano-quantum photosensitive solution;

[0012] S4. The nano-quantum photosensitive solution is spin-coated onto a quartz glass substrate using a spin-coating process to form a nano-quantum photosensitive thin film layer;

[0013] S5. Integrate and assemble the nano-quantum photosensitive thin film layer with the LED array constructed in step S2 to ensure that the 395nm excitation light uniformly irradiates the nano-quantum photosensitive thin film layer, forming a spectral simulation system;

[0014] S6. Measure the output spectrum I of the spectral simulation system using a spectrometer. sim (λ), calculate its relationship with the target spectrum I obtained in step S1. ref The normalized correlation coefficient S of (λ) is maximized by adjusting the LED driving parameters and thin film characteristics.

[0015] Furthermore, the LED array described in step (2) is driven by a nanosecond-level high-voltage pulse driver, and the pulse current waveform satisfies:

[0016] ;

[0017] in, This is the equivalent load resistance of the LED. The rise time constant of the circuit is Peak voltage, This represents the pulse width.

[0018] Furthermore, the weighted integral model described in step (3) is as follows:

[0019] ;

[0020] in, Describes the normalized emission spectrum of the j-th type of nano-quantum photosensitive light, satisfying ; This indicates the number of types of nano-quantum photosensitive materials selected. These are the weighting coefficients.

[0021] Furthermore, the film thickness in step (4) To maximize the luminous intensity, the following formula must be satisfied:

[0022] ;

[0023] In the formula, The total luminous intensity, The internal quantum efficiency of nano-quantum photosensors; The absorption coefficient of the nano-quantum photosensitive light at the excitation wavelength is related to the concentration and optical path length. The self-absorption coefficient represents the loss of fluorescence as it propagates through the film and is reabsorbed by itself. The scattering loss coefficient is affected by the size and aggregation degree of the nano-quantum photosensitive element; The thickness of the nano-quantum photosensitive film layer; The intensity of the incident excitation light.

[0024] Furthermore, the total output spectrum of the system in step (5) satisfies: ;

[0025] In the formula, For quartz glass at wavelength Transmittance at that location; The fluorescence spectrum emitted by the nano-quantum photosensitive element after excitation; Background light that passes directly through the LED array; The residual transmittance of background light in the nano-quantum photosensitive film satisfies Beer-Lambert's law: , As the absorption attenuation factor, This is the scattering attenuation factor.

[0026] The ratio of ZnCdS, CdSe and CdTe is 1:1.5:1.3.

[0027] The similarity evaluation of the spectra uses a normalized correlation coefficient S, defined as:

[0028] ;

[0029] In the formula, To simulate the output spectral values ​​of the system, The target spectrum was measured in a real partial discharge experiment; This represents the mean of the corresponding spectrum.

[0030] On the other hand, the present invention also provides a partial discharge optical signal simulation system for gas-insulated devices based on nano-quantum photosensitive materials, for implementing the above method, characterized in that it includes:

[0031] The system comprises: a spectral acquisition module for acquiring target spectral characteristics; an LED array module containing multi-wavelength ultraviolet LEDs arranged in different regions; a nano-quantum photosensitive film module made of a composite nano-quantum photosensitive solution with optimized formulation; a spectral detection module for outputting spectral measurements; and an intelligent control module for automatically adjusting system parameters based on spectral similarity.

[0032] Furthermore, the LED array module includes: an independently driven 395nm excitation light source region; a mixed distribution region of 280nm, 310nm, and 355nm; and a nanosecond-level pulse driving circuit capable of generating fast pulses with adjustable pulse width.

[0033] Furthermore, the nano-quantum photosensitive thin film module includes: a quartz glass substrate; a nano-quantum photosensitive functional layer with optimized thickness; and a protective coating to improve the stability of the thin film.

[0034] Furthermore, the intelligent control module includes: a spectral analysis unit for real-time calculation of spectral similarity S; a parameter optimization unit for automatically adjusting LED driving parameters and thin film characteristics based on the S value; and a feedback control unit for realizing closed-loop regulation of the system.

[0035] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0036] 1) By combining multi-wavelength LED arrays and composite nano-quantum photosensitive sensors, the spectral characteristics of partial discharge, including the main peak position, energy distribution and transient characteristics, are accurately reproduced, covering the ultraviolet to near-infrared band.

[0037] 2) Simulate the optical signal of high-voltage partial discharge under normal pressure conditions to avoid the high risk and high cost of real discharge experiments, and provide reliable data for the calibration of detection equipment and the development of algorithms.

[0038] 3) The thickness and ratio of the nano-quantum photosensitive film can be dynamically adjusted to meet the spectral simulation requirements under different operating conditions. Based on the nano-quantum photosensitive excitation-luminescence theoretical model, the film thickness and excitation conditions are optimized to maximize luminescence efficiency, suppress background noise, and improve the signal-to-noise ratio. Attached Figure Description

[0039] Figure 1 This is a flowchart of the present invention.

[0040] Figure 2 This is a distribution diagram of surface light sources. Detailed Implementation

[0041] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and embodiments, but this should not be construed as limiting the scope of protection of the present invention.

[0042] A method for simulating the optical signal of partial discharge in gas-insulated equipment based on nano-quantum photosensitivity technology includes the following steps:

[0043] S1. Collect the raw optical signals I_raw(t) generated by different types of partial discharge in the GIS equipment, perform Fast Fourier Transform to obtain the spectrum F(ω), and normalize the signals to obtain the target simulated spectrum I_norm(λ). The specific method is as follows:

[0044] In an experimental environment, a high-voltage discharge platform was used to simulate typical defects inside GIS (such as tip discharge, floating discharge, and flashover of insulating surfaces). Transient optical signals during the discharge process were acquired using a photomultiplier tube (PMT), a spectrometer, or a high-speed camera. After recording the original light intensity signals in the time domain, a Fast Fourier Transform (FFT) was used to analyze its spectral components and obtain the energy distribution of characteristic spectral bands.

[0045] For each type of partial discharge, let the acquired optical signal be... Its spectrum is:

[0046] (1);

[0047] To facilitate the comparison and control of the spectra of analog devices, the acquired signals need to be normalized. Let the objective function after normalization be:

[0048] ;

[0049] It is a wavelength of The spectral intensity at time t.

[0050] Ultimately, a "standard template" for the target simulated spectrum is formed, which serves as a benchmark for subsequent system luminescence design and evaluation.

[0051] Step S2. Based on the target simulated spectrum obtained in Step S1, construct a multi-wavelength ultraviolet LED array. This array includes three types of LEDs (280nm, 310nm, and 355nm) for simulating native ultraviolet radiation and a 395nm LED for exciting nano-quantum photosensors. The 395nm LED constitutes an independent excitation region, while the other wavelength LEDs are staggered and mixed to improve spectral continuity. The specific method is as follows:

[0052] Based on the main radiation components in the ultraviolet region of the partial discharge spectrum extracted in the first step, LEDs with center wavelengths of 280 nm, 310 nm, 355 nm, and 395 nm were selected as simulated excitation sources. Among them, 280–355 nm was used to simulate the native ultraviolet radiation signal in partial discharge, while the 395 nm band was used as the main excitation source for exciting nano-quantum photosensitive materials.

[0053] The LED surface light source adopts a zoned arrangement structure: the 395nm band LED forms an independent excitation region, ensuring that the nano-quantum photosensitive coating receives a stable and pure excitation signal. The other three bands (280 / 310 / 355nm) are mixed and distributed. Through the staggered arrangement of multiple frequency bands, the continuity and spatial uniformity of the ultraviolet simulated spectrum are improved, while avoiding local heat accumulation. Figure 2 This is a distribution diagram of surface light sources.

[0054] To reproduce the rapid emission characteristics during the partial discharge transient process, a nanosecond-level pulsed power supply is used for driving. The pulse driver is designed to output a peak voltage. Pulse width repetition frequency .

[0055] Typical pulse current waveform of the drive output It can be represented as:

[0056] ;

[0057] in, The equivalent load resistance of the LED; This is the circuit rise time constant.

[0058] In practical applications, each type of wavelength LED is controlled through an independent driving channel, using GaN or MOSFET high-speed power devices as switching elements, and setting the frequency, pulse width and duty cycle through a function signal generator to ensure that LEDs of different wavelengths are excited synchronously or asynchronously in the time domain.

[0059] Total output spectral power of LED array It can be approximated by the luminous flux of each band unit. and spectral response function constitute:

[0060] ;

[0061] in, This represents the center wavelength of the i-th LED. This represents the luminous flux of the LED per unit time; This represents the normalized spectral shape function, reflecting the distribution of emission intensity with wavelength; This indicates the number of LED types selected (4 in this case).

[0062] S3. Based on the target spectrum obtained in step S1, determine the ratio of ZnCdS, CdSe, and CdTe nano-quantum photosensors using a weighted integral model to prepare a composite nano-quantum photosensor solution; the specific method is as follows:

[0063] Based on the spectral characteristics of partial discharge in the visible light band determined in the first two steps, a composite solution was constructed using group II–VI semiconductor nano-quantum photosensitive materials with tunable emission peak positions and high quantum efficiency. Specific material selection is as follows:

[0064] 1. ZnCdS nano-quantum photosensitive material: The main emission center wavelength is 420 nm, corresponding to simulated partial discharge blue light emission;

[0065] 2. CdSe nano-quantum photosensitive material: Multiple emission peaks of 452 nm, 491 nm, 551 nm and 628 nm can be achieved by controlling the size, simulating the green to orange-red region;

[0066] 3. CdTe nano-quantum photosensitive material: emission peaks are located at 684 nm and 735 nm, corresponding to simulated deep red and near-infrared emission characteristics.

[0067] Three types of nano-quantum photosensitive materials are dispersed in non-polar organic solvents (such as n-hexane and cyclohexane) and formulated by mass ratio according to the target spectrum to form a composite fluorescent solution. The ratio is controlled according to the following weighted integral model:

[0068] ;

[0069] This represents the normalized target spectrum in the visible light range of partial discharge; Represents the normalized emission spectrum of the j-th type of nano-quantum photosensitive element (satisfying...) ); This indicates the number of types of nano-quantum photosensitive materials selected (7 in this case).

[0070] The transmission of background light through the nano-quantum photosensitive film can be described by the Beer-Lamber law, and its light intensity attenuation expression is as follows:

[0071] ;

[0072] in, The intensity of the incident background light. The absorption attenuation coefficient of the background light. The thickness of the nano-quantum photosensitive film is given. The attenuation of background light is mainly determined by absorption and scattering effects, with the absorption coefficient being... The extinction coefficient of nano-quantum photosensitive materials Determined by concentration c, i.e. .

[0073] Furthermore, the scattering loss of background light in the film can be determined by the scattering coefficient. Characterized by its attenuation form:

[0074] ;

[0075] in Dependence on the particle size of nano-quantum photosensitive materials And the microstructure within the film. When the particle size of the nano-quantum photosensitive material is small (e.g., < 5 nm), Rayleigh scattering dominates, and the scattering loss is low; when the particle size is large or when the nano-quantum photosensitive material is aggregated within the film, Mie scattering is enhanced, making... Increase.

[0076] Taking into account both absorption and scattering factors, the final expression for background light transmission is:

[0077] ;

[0078] Among them, film thickness The impact on background light transmission can be divided into the following three cases:

[0079] 1 film condition ( ): Background light attenuation is small, and transmitted light intensity decreases approximately linearly.

[0080] 2. Medium film thickness ( Background light transmission decreases exponentially, while nano-quantum photosensitive absorption is significant.

[0081] 3. Thick film conditions ( ): The background light is almost completely absorbed, with only a small amount of scattered light transmitted.

[0082] 2. Nanoscale quantum photosensitive luminescence intensity characteristics:

[0083] Total luminescence intensity of nano-quantum photosensors Determined by excitation light absorption, self-absorption, and optical loss, its expression is as follows:

[0084] ;

[0085] in: The internal quantum efficiency of nano-quantum photosensitive; The absorption coefficient of the nano-quantum photosensitive ... The self-absorption coefficient determines the loss of fluorescence signal within the film; This is the optical scattering loss coefficient.

[0086] Film thickness The effect on luminous intensity is manifested as follows:

[0087] 1. Film conditions ( ): Nano-quantum photosensitive devices absorb less excitation light and have lower luminescence intensity.

[0088] 2. Medium film thickness ( The luminescence intensity reaches its peak, and the absorption of nano-quantum photosensitive material tends to saturate.

[0089] 3. Thick film conditions ( ): Due to increased self-absorption and scattering losses, the luminescence intensity decreases.

[0090] 3. Relative intensity relationship between excitation light and background light:

[0091] Define the ratio of the luminous intensity to the background light transmission intensity of a nano-quantum photosensitive element. As an indicator of relative light intensity:

[0092] ;

[0093] Film thickness relative light intensity The effects are as follows:

[0094] 1. Film conditions ( Background light transmission is high, resulting in a weaker emission signal. Lower.

[0095] 2. Medium film thickness ( Background light transmission decreases rapidly, while nano-quantum photoluminescence is enhanced. Rapid rise.

[0096] 3. Thick film conditions ( The background light is almost completely absorbed, but self-absorption and scattering are enhanced. It may decline.

[0097] To optimize the luminescence intensity and background suppression ratio of the film, the above excitation-luminescence intensity theoretical model was introduced during the fabrication stage to predict and control the relationship between film thickness h and excitation efficiency. The expression for the total luminescence intensity is:

[0098] ;

[0099] The internal quantum efficiency of nano-quantum photosensors; The absorption coefficient of the nano-quantum photosensitive light at the excitation wavelength is related to the concentration and optical path length. The self-absorption coefficient represents the loss of fluorescence as it propagates through the film and is reabsorbed by itself. The scattering loss coefficient is affected by the size and aggregation degree of the nano-quantum photosensitive element; The thickness of the nano-quantum photosensitive film layer; The intensity of the incident excitation light.

[0100] S4. A nano-quantum photosensitive thin film was prepared on a quartz glass substrate using a spin-coating process, with the film thickness h controlled within the optimal range. The specific method is as follows:

[0101] The composite nano-quantum photosensitive fluorescent solution prepared in step three is uniformly deposited to form a stable luminescent film. This invention uses spin coating to prepare nano-quantum photosensitive films on the surface of a quartz glass sheet. The specific process is as follows: A high-transparency quartz glass sheet with a thickness of 0.5–1 mm is selected as the spin coating substrate, and a two-step spin coating process is employed. The first stage involves rotating at 500 rpm for 5 seconds to pre-spread the solution; the second stage increases the speed to 2000 rpm for 30 seconds to promote uniform spreading of the solution and the formation of a film of a fixed thickness. The relationship between the film thickness h and the spin coating parameters can be estimated using an empirical model.

[0102] ;

[0103] The viscosity of the solution; Angular velocity of spin coating (rad / s); These are empirical fitting parameters, which depend on the specific material system and solution concentration (usually...). Between 0.5 and 1.0).

[0104] S5. Integrate the nano-quantum photosensitive film prepared in step S4 with the LED array constructed in step S2, ensuring that the 395nm excitation light uniformly irradiates the nano-quantum photosensitive film layer to form a spectral simulation system. The specific method is as follows:

[0105] After drying, the nano-quantum photosensitive film is installed directly above the UV LED array panel designed in the second step. A replaceable slot or fixing bracket is used for positioning to ensure the film is parallel and tightly fitted to the LED array without air gaps. The 395 nm LED excitation area must be directly aligned with the nano-quantum photosensitive film to ensure uniform and directional excitation.

[0106] The total emission spectrum output by the entire system can be expressed as:

[0107] ;

[0108] For quartz glass at wavelength Transmittance at that location; The fluorescence spectrum emitted by the nano-quantum photosensitive element after excitation; Background light that passes directly through the LED array; The residual transmittance of background light in the nano-quantum photosensitive film satisfies Beer-Lambert's law:

[0109] ;

[0110] As the absorption attenuation factor, This is the scattering attenuation factor.

[0111] S6. Measure the spectral simulation system, using a spectrometer to measure the output spectrum I_sim(λ), calculate its normalized correlation coefficient S with the target spectrum I_ref(λ) obtained in step S1, and maximize the value of S by adjusting the LED driving parameters and thin film characteristics. The specific method is as follows:

[0112] The completed partial discharge spectral simulation system needs to undergo performance evaluation and spectral calibration under various defect scenarios to ensure that its output spectrum has good consistency with the real discharge process in terms of main peak position, energy distribution, and light intensity ratio. The testing process includes three stages: spectral measurement, similarity evaluation, and system parameter adjustment.

[0113] The simulation system was placed in a dark box environment, and the output spectrum was measured using a spectrometer with an integrating sphere (such as Ocean Optics QEPro). Its spectral band coverage ranges from 200 to 800 nm, with a resolution better than 1 nm.

[0114] Construction of similarity evaluation index: to quantify the relationship between simulated spectrum and target real spectrum The degree of fit is determined by using the normalized correlation coefficient S as the spectral similarity index, defined as:

[0115] ;

[0116] To output spectral values ​​for the simulation system; The target spectrum was measured in a real partial discharge experiment; S represents the mean of the corresponding spectrum. The value of S ranges from [-1, 1], with the closer to 1 indicating a higher similarity.

Claims

1. A method for simulating the optical signal of partial discharge in a gas-insulated device based on nano-quantum photosensitive materials, characterized in that, Includes the following steps: S1. Acquire raw optical signals I generated by different types of partial discharge in GIS equipment. raw (t), perform a fast Fourier transform to obtain the spectrum F(ω), and then normalize it to obtain the target simulated spectrum I. norm (λ); S2. Based on the target simulated spectrum obtained in step S1, construct a multi-wavelength ultraviolet LED array. The array includes three types of LEDs: 280nm, 310nm, and 355nm, used to simulate native ultraviolet radiation, and a 395nm LED used to excite nano-quantum photosensitive light. The 395nm LED constitutes an independent excitation region, and the LEDs of the other wavelength bands are distributed in an alternating and mixed manner to improve spectral continuity. S3. Based on the target spectrum obtained in step S1, determine the ratio of ZnCdS, CdSe and CdTe using a weighted integral model to prepare a nano-quantum photosensitive solution; S4. The nano-quantum photosensitive solution is spin-coated onto a quartz glass substrate using a spin-coating process to form a nano-quantum photosensitive thin film layer; S5. Integrate and assemble the nano-quantum photosensitive thin film layer with the LED array constructed in step S2 to ensure that the 395nm excitation light uniformly irradiates the nano-quantum photosensitive thin film layer, forming a spectral simulation system; S6. Measure the output spectrum I of the spectral simulation system using a spectrometer. sim (λ), calculate its relationship with the target spectrum I obtained in step S1. ref The normalized correlation coefficient S of (λ) is maximized by adjusting the LED driving parameters and thin film characteristics.

2. The partial discharge optical signal simulation method according to claim 1, characterized in that, The LED array described in step S2 is driven by a nanosecond-level high-voltage pulse driver, and the pulse current waveform satisfies: in, This is the equivalent load resistance of the LED. The rise time constant of the circuit is Peak voltage, This represents the pulse width.

3. The partial discharge optical signal simulation method according to claim 1, characterized in that, The weighted integral model mentioned in step S3 is: in, Describes the normalized emission spectrum of the j-th type of nano-quantum photosensitive light, satisfying ; This indicates the number of selected nano-quantum photosensitive types. These are the weighting coefficients.

4. The partial discharge optical signal simulation method according to claim 1 or 3, characterized in that, The ratio of ZnCdS, CdSe and CdTe is 1:1.5:1.

3.

5. The method for simulating partial discharge optical signals according to claim 1, characterized in that, The thickness of the nano-quantum photosensitive thin film layer in step S4 To maximize the luminous intensity, the following formula must be satisfied: In the formula, The total luminous intensity, The internal quantum efficiency of nano-quantum photosensors; The absorption coefficient of the nano-quantum photosensitive light at the excitation wavelength is related to the concentration and optical path length. The self-absorption coefficient represents the loss of fluorescence as it propagates through the film and is reabsorbed by itself. The scattering loss coefficient is affected by the size and aggregation degree of the nano-quantum photosensitive element; The thickness of the nano-quantum photosensitive film layer; The intensity of the incident excitation light.

6. The partial discharge optical signal simulation method according to claim 1, characterized in that, The total output spectrum of the spectral simulation system in step S5 satisfies: In the formula, For quartz glass at wavelength Transmittance at that location; The fluorescence spectrum emitted by the nano-quantum photosensitive element after excitation; Background light that passes directly through the LED array; The residual transmittance of background light in the nano-quantum photosensitive film satisfies Beer-Lambert's law: , As the absorption attenuation factor, This is the scattering attenuation factor.

7. The partial discharge optical signal simulation method according to claim 6, characterized in that, The similarity evaluation of the spectra uses a normalized correlation coefficient S, defined as: In the formula, To simulate the output spectral values ​​of the system, The target spectrum was measured in a real partial discharge experiment; This represents the mean of the corresponding spectrum.

8. A partial discharge optical signal simulation system for gas-insulated devices based on nano-quantum photosensitive materials, used to implement the method described in any one of claims 1-7, characterized in that... include: The spectral acquisition module is used to acquire the spectral characteristics of the target. A multi-wavelength ultraviolet LED array module is used to output simulated ultraviolet light signals for partial discharge; The nano-quantum photosensitive film module is made of a composite nano-quantum photosensitive solution with optimized formulation, covering the blue light to near-infrared band, and generates fluorescence when excited by LED; the spectral detection module is used to output spectral measurements; and the intelligent control module is used to automatically adjust system parameters based on spectral similarity.

9. The partial discharge optical signal simulation system for gas-insulated equipment based on nano-quantum photosensitive materials according to claim 8, characterized in that... The multi-wavelength ultraviolet LED array module includes: an independently driven 395nm excitation source region; a mixed distribution region of 280nm, 310nm, and 355nm; and a nanosecond-level pulse driving circuit capable of generating fast pulses with adjustable pulse width.

10. The system according to claim 8, characterized in that... The nano-quantum photosensitive thin film module includes: a quartz glass substrate; a nano-quantum photosensitive functional layer with optimized thickness; and a protective coating to improve the stability of the thin film.

11. The system according to claim 8, characterized in that... The intelligent control module includes: a spectral analysis unit for real-time calculation of spectral similarity S; a parameter optimization unit for automatically adjusting LED driving parameters and thin film characteristics based on the S value; and a feedback control unit for achieving closed-loop regulation of the system.

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