Multi-zone temperature controlled electrostatic chuck and plasma processing apparatus

Abstract

The application provides a multi-zone temperature control electrostatic chuck and a plasma processing device, the multi-zone temperature control electrostatic chuck comprising at least one of a grid temperature control module and a radial partition temperature control module; the grid temperature control module comprising a plurality of first independent temperature control units arranged in an array; the radial partition temperature control module comprising a plurality of annular second independent temperature control units; the first independent temperature control unit and the second independent temperature control unit each comprising a partition variable heating structure; the partition variable heating structure comprising a partition control member, a first partition deformation member, and at least two first partition heating members; the first partition deformation member comprising a first center and at least two first connecting claws; the partition control member being electrically connected with the first partition deformation member and the first partition heating members; and the first partition heating members being connected with the ends of the first connecting claws away from the first center. The multi-zone temperature control electrostatic chuck is used for balancing local overheating areas or local overcooling areas caused by uneven plasma distribution.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to a multi-zone temperature control electrostatic chuck and a plasma processing device. BACKGROUND

[0002] The electrostatic chuck plays an important role in semiconductor manufacturing equipment, such as etching equipment, deposition equipment, and adhesive removal equipment. The surface of the electrostatic chuck directly carries a wafer, and the temperature of the wafer is adjusted in real time to provide a suitable process temperature for different process treatments of the wafer.

[0003] At present, the temperature control scheme of the electrostatic chuck generally embeds heating wires at some fixed position areas on the electrostatic chuck, so that the temperature of these fixed position areas can be controlled. That is, the position partition of the temperature control of the electrostatic chuck is fixed, and the temperature of any position of the electrostatic chuck cannot be adjusted in real time to the process required temperature according to the process requirements. It is difficult to solve the problem of local overheating or local undercooling caused by uneven distribution of plasma. SUMMARY

[0004] The purpose of the present application is to provide a multi-zone temperature control electrostatic chuck and a plasma processing device, which is used to balance the local overheating area or the local undercooling area caused by uneven distribution of plasma.

[0005] According to a first aspect of an embodiment of the present application, a multi-zone temperature control electrostatic chuck is provided, which is applied to a plasma processing device, and the multi-zone temperature control electrostatic chuck comprises at least one of a grid temperature control module and a radial partition temperature control module.

[0006] The grid temperature control module comprises a plurality of first independent temperature control units arranged in an array;

[0007] The radial partition temperature control module comprises a plurality of annular second independent temperature control units, and the plurality of annular second independent temperature control units are arranged with the same center.

[0008] The first independent temperature control unit and the second independent temperature control unit each comprise a partition variable heating structure; the partition variable heating structure comprises a partition control member, at least two first partition heating members, and a first partition deformation member, the first partition deformation member comprises a first center, and at least two first connecting claws extending away from the first center in a direction away from the first center;

[0009] The partition control member is electrically connected with the first partition deformation member and the first partition heating member, and is used to control the current flowing through the first partition heating member and the current flowing through the first partition deformation member, respectively;

[0010] The first partition heating member is connected with the end of the first connecting claw away from the first center; the first partition deformation member realizes temperature rise or fall with the change of the current flowing through, and elongation deformation or shortening deformation occurs when the first partition deformation member temperature rises or falls, so that the first connecting claw drives the first partition heating member to move away from or close to the first center due to elongation deformation or shortening deformation, so as to increase or decrease the distance between the first partition heating member and the first center.

[0011] Optionally, the multi-zone temperature control electrostatic chuck further comprises a top plate, a bottom plate and a side plate.

[0012] The top plate is used to carry a wafer, the top plate and the bottom plate are connected through the side plate, and the top plate, the bottom plate and the side plate form an accommodating cavity for accommodating the grid temperature control module and the radial partition temperature control module.

[0013] The first partition heating member is arranged in abutment with the bottom of the top plate, and the cavity wall of the accommodating cavity has a gap for the movement of the first partition heating member between the grid temperature control module and the radial partition temperature control module in the radial direction.

[0014] Optionally, the first partition deformation member is a memory wire.

[0015] Optionally, the grid temperature control module is integrated in a first plane; the radial partition temperature control module is integrated in a second plane; the first plane and the second plane are the same plane or two different planes parallel to each other.

[0016] Optionally, the partition variable heating structure further comprises a first heat insulation member, which is arranged between and connected with the first partition heating member and the first partition deformation member, and is used to cut off the heat conduction bridge between the first partition heating member and the first partition deformation member.

[0017] Optionally, the partition variable heating structure further comprises a temperature compensation component, the temperature compensation component comprising a second partition deformation component and a second partition heating component; the second partition deformation component is connected to the side of the first partition heating component away from the first partition deformation component, the second partition deformation component comprising a second center and at least two second connecting claws extending from the second center in a direction away from the second center, the end of the second connecting claw away from the second center being provided with a second partition heating component, the second partition deformation component and the second partition heating component being electrically connected to the partition control component, the second partition deformation component realizing temperature increase or decrease with the change of the current flowing therethrough, and the second partition deformation component realizing elongation deformation or shortening deformation when the temperature of the second partition deformation component increases or decreases, so that the second connecting claw drives the second partition heating component to move in a direction away from or close to the second center due to the elongation deformation or shortening deformation, so as to increase or decrease the distance between the second partition heating component and the second center.

[0018] Optionally, the second partition deformation component is a memory wire.

[0019] Optionally, the partition variable heating structure further comprises a second heat insulation component, the second heat insulation component being arranged between and connected to the second partition deformation component and the first partition heating component, the second heat insulation component being used to cut off the heat conduction thermal bridge between the first partition heating component and the second partition deformation component.

[0020] Optionally, the partition variable heating structure further comprises a third heat insulation component, the third heat insulation component being arranged between and connected to the second partition deformation component and the second partition heating component, the third heat insulation component being used to cut off the heat conduction thermal bridge between the second partition deformation component and the second partition heating component.

[0021] Optionally, the number of the temperature compensation components is set to be several, the several temperature compensation components being divided into at least two groups, each group of the temperature compensation components being arranged on the side of the first partition heating component away from the first partition deformation component, and the plurality of temperature compensation components in each group being sequentially arranged in a direction away from the first partition deformation component.

[0022] Optionally, the partition variable heating structure further comprises an adsorption electrode for applying an electrostatic field to the wafer to adsorb and fix the wafer, the adsorption electrode being fixedly connected or integrally arranged with the first partition heating component, the adsorption electrode being electrically connected to the partition control component.

[0023] According to a second aspect of the embodiments of the present application, there is provided a plasma processing device for performing plasma processing on a wafer, comprising: at least one multi-zone temperature control electrostatic chuck as described in any one of the first aspect.

[0024] Compared with the prior art, the present application has the beneficial effects that: the current flowing through the first partition deformation member is controlled by the partition control member, so that the first partition deformation member is elongated or shortened to adjust the spacing between the first partition heating members, thereby dynamically and finely adjusting the size and shape of the temperature control partition; the current flowing through the first partition heating member is controlled by the partition control member to adjust the heating power of the first partition heating member, thereby dynamically and finely adjusting the heating power and heating density of the variable heating structure of each partition in the grid temperature control module and / or the radial partition temperature control module, which is beneficial to balancing the local overheating area or local overcooling area caused by uneven plasma distribution.

[0025] In addition, the multi-zone temperature control electrostatic chuck of the present application has intelligent self-adaptive control function and can automatically optimize the temperature control strategy according to the real-time monitoring data of plasma distribution. In the plasma etching process, compared with the traditional electrostatic chuck, the present application can improve the wafer surface temperature uniformity by 30%-50% and reduce the etching defect rate by 40%-60%. At the same time, it can be well applied in various plasma processing processes of different sizes of wafers (such as 8 inches and 12 inches). For example, in the thin film deposition process of a 12-inch wafer, the present application can improve the film thickness uniformity from 75%-80% of the traditional method to 90%-95%, significantly improving the process yield and quality stability. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a structural schematic diagram of an electrostatic chuck in the embodiments of the present application.

[0027] Figure 2 is a structural schematic diagram of a variable heating structure in the embodiments of the present application.

[0028] Figure 3 is a structural schematic diagram of an array arrangement of a plurality of first independent temperature control units in the embodiments of the present application.

[0029] Figure 4 is a structural schematic diagram of a concentric circle arrangement of a plurality of annular second independent temperature control units in the embodiments of the present application.

[0030] Figure 5 is a matlab simulation schematic diagram of a temperature field when only the radial partition temperature control module is enabled in the embodiments of the present application.

[0031] Figure 6 is a matlab simulation schematic diagram of a temperature field when the grid temperature control module and the radial partition temperature control module are simultaneously enabled in the embodiments of the present application. Figure 1.

[0032] Figure 7 is a matlab simulation schematic of the temperature field when the grid temperature control module and the radial partition temperature control module are both enabled in an embodiment of the present application Figure 2 .

[0033] Figure 8 is a structural schematic of the first partition heat element and the first partition deformation element in an embodiment of the present application.

[0034] Figure 9 is a structural schematic of the first partition heat element and the adsorption electrode in an embodiment of the present application.

[0035] Figure 10 is a structural schematic of the first partition heat element and the temperature compensation component in an embodiment of the present application.

[0036] Figure 11 is a matlab simulation schematic of the voltage when the adsorption electrode is powered in an embodiment of the present application.

[0037] Figure 12 is a matlab simulation schematic of the temperature field of the electrostatic chuck in an embodiment of the present application.

[0038] Figure 13 is a plan view of the matlab simulation of the temperature field of the electrostatic chuck shown in Figure 12 .

[0039] Explanation of reference numerals in the drawings:

[0040] 1, first independent temperature control unit; 2, second independent temperature control unit; 3, top plate; 4, bottom plate; 5, side plate; 6, first plane; 7, second plane; 10, partition control element; 20, first partition heat element; 30, first partition deformation element; 40, containing cavity; 50, first heat insulation element; 60, second partition deformation element; 70, second partition heat element; 80, second heat insulation element; 90, third heat insulation element; 100, adsorption electrode. DETAILED DESCRIPTION

[0041] Unless otherwise defined, technical or scientific terms used in this specification shall have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. In the following description, specific embodiments of the application are described in connection with the appended drawings, in which it is noted that the drawings provide merely examples of the application and therefore should not be considered as limiting its scope. It will be apparent to those skilled in the art that numerous modifications and variations can be made without departing from the spirit and scope of the application.

[0042] To solve the problems in the prior art, embodiments of the present application provide a multi-zone temperature control electrostatic chuck, as shown in Figure 1 applied to a plasma processing device, the multi-zone temperature control electrostatic chuck comprises at least one of a grid temperature control module and a radial partition temperature control module. It can be understood that, in actual use, in one embodiment, the electrostatic chuck only includes the grid temperature control module; in another embodiment, the electrostatic chuck only includes the radial partition temperature control module; and in still another embodiment, the electrostatic chuck simultaneously includes the grid temperature control module and the radial partition temperature control module.

[0043] The arrangement of this embodiment breaks through the problems in the prior art that the temperature can only be adjusted in fixed zones and cannot be finely adjusted. Specifically, by selecting or combining the grid temperature control module and the radial partition temperature control module, the grid temperature control module can be used to realize high-resolution and local temperature compensation at any position on the wafer surface, the radial partition temperature control module can be used to continuously adjust the temperature in a large range from the edge region to the center region of the wafer, and the shape and size of the temperature control region can be dynamically reconstructed as needed by the cooperation of the two, which significantly improves the plasma processing uniformity and process window on the basis of reducing the amount of heating wire deployment, thereby effectively overcoming the limitations of the existing fixed partition structure in local overheating or overcooling compensation.

[0044] It is worth noting that in the field of semiconductors, the etching equipment, deposition equipment and debonding equipment contained in the plasma processing device are usually equipped with electrostatic chucks, which play a crucial role in the device. They not only serve to firmly adsorb and fix the wafer during processing, ensuring the stability of the wafer in high-precision processing, but also optimize the processing process through precise temperature control, improving production efficiency and product quality. For example, in etching equipment, the electrostatic chuck can accurately control the temperature of the wafer surface, ensuring the uniformity and consistency of the etching process; in deposition equipment, the temperature control of the electrostatic chuck helps to form a uniform film; and in debonding equipment, the electrostatic chuck can prevent thermal damage to the wafer during high-temperature processing. Therefore, the performance of the electrostatic chuck directly affects the yield and efficiency of semiconductor manufacturing, and is an indispensable key component in the plasma processing device.

[0045] In one embodiment, as shown in Figure 3 the grid temperature control module includes a plurality of first independent temperature control units 1 arranged in an array. In Figure 3In an embodiment, the array includes 4 rows and 4 columns, a total of 16 first independent temperature control units 1. Of course, in other embodiments, the array is not limited to 4 rows and 4 columns, which will not be repeated here. The matrix arrangement in the embodiment can realize fine partition control of the surface temperature of the electrostatic chuck, so that each independent temperature control unit can accurately adjust the temperature according to the process requirements of different regions of the wafer, thereby effectively balancing the local temperature difference caused by uneven plasma distribution, improving the uniformity of wafer processing and process quality.

[0046] In an embodiment, as shown in Figure 4 , the radial partition temperature control module includes a plurality of annular second independent temperature control units 2, and the plurality of annular second independent temperature control units 2 are arranged with the same center; in Figure 4 an embodiment, there are 4 annular second independent temperature control units 2, of course, in other embodiments, it is not limited to 4 annular second independent temperature control units 2, which will not be repeated here. The annular structure in this embodiment can perform partition temperature control according to the radial position difference of the wafer, better adapt to the radial temperature gradient change in the plasma processing process, thereby realizing the uniformization regulation of the overall temperature of the wafer, especially suitable for processing large-area wafers, ensuring the temperature consistency of the center region and the edge region of the wafer, and improving the stability of the process and the product quality.

[0047] In an embodiment, as shown in Figure 2 , the first independent temperature control unit 1 and the second independent temperature control unit 2 each include a partition variable heating structure; the partition variable heating structure includes a partition control member 10, at least two first partition heating members 20, and a first partition deformation member 30; the partition control member 10 is electrically connected with the first partition deformation member 30 and the first partition heating member 20, for respectively controlling the current flowing through the first partition heating member 20 and the current flowing through the first partition deformation member 30.

[0048] This embodiment can realize dynamic adjustment and fine management of the partition temperature of the electrostatic chuck by the partition control member 10 independently controlling the current of the first partition deformation member 30 and the first partition heating member 20. The telescopic function of the first partition deformation member 30 can change the distance between the heating parts in real time according to the process requirements, thereby flexibly adjusting the size and shape of the temperature control partition, and the current control of the first partition heating member 20 by the partition control member 10 can accurately adjust the heating power and heating density of each partition. This design not only can effectively balance the local temperature difference caused by uneven plasma distribution, but also can be self-adaptively optimized according to different process requirements and wafer states, significantly improving the temperature uniformity of wafer processing and process yield, especially suitable for semiconductor manufacturing processes with extremely high temperature control precision.

[0049] In an embodiment, the partition control 10 can be an integrated intelligent controller, which has multiple independent control channels, each of which is connected to a different first partition heating element 20 and a first partition deformation element 30. Through the built-in algorithm and sensor feedback mechanism, the controller can monitor the temperature and deformation state of each partition of the wafer in real time, and automatically adjust the current flowing through each first partition heating element and first partition deformation element 30 according to the preset process parameters and target temperature distribution. This intelligent controller not only can realize accurate temperature control, but also can adaptively adjust according to the dynamic changes in the plasma processing process, so as to optimize the temperature distribution of the entire electrostatic chuck and improve the quality and efficiency of wafer processing.

[0050] In an embodiment, the first partition deformation element 30 is a memory wire. However, it is not limited to a memory wire. When it is a memory wire, the resistance of the memory wire changes with the current to generate heat, and the crystal structure undergoes reversible phase change, so that the whole can realize elongation or shortening. Specifically, under the drive of temperature or stress, the internal crystal of the memory alloy repeatedly and reversibly transforms between high-temperature austenite phase and low-temperature martensite phase; when powered on and heated, the memory wire changes from martensite phase to austenite phase, the lattice symmetry is improved, and the macroscopic performance is elongation of the wire; after power off and cooling, the austenite phase returns to the martensite phase, the lattice symmetry is reduced, and the macroscopic performance is shortening of the wire. The whole process only makes cooperative displacement of atoms, without diffusion or composition change, so that the elongation and shortening transformation can be completed within milliseconds, and can be repeated according to the operation of power on or power off, to realize accurate deformation control.

[0051] In an embodiment, the memory wire can be a nickel-titanium alloy (NiTi), but it is not limited to a nickel-titanium alloy (NiTi). As long as the material has shape memory effect and good thermal stability, corrosion resistance and sufficient mechanical strength, can keep its performance stable in multiple phase change processes, and can reliably realize the elongation and shortening deformation function in the temperature range involved in the semiconductor manufacturing process, it can be applied to the multi-zone temperature control electrostatic chuck of the present application as the material of the first partition deformation element 30.

[0052] In an embodiment, the first partition deformation element 30 includes a first center and at least two first connecting claws extending from the first center to the periphery, and the number of the first partition heating elements 20 matches the number of the first connecting claws.

[0053] In an embodiment, the two first connecting claws and the first center are arranged in the same plane, for example, in Figure 1 In an embodiment, they are all arranged in the same horizontal plane.

[0054] In one embodiment, the first partition deformation member 30 has two first connecting claws, which are aligned with the first center. Alternatively, there may be an included angle between the two first connecting claws.

[0055] In one embodiment, such as Figure 2 As shown, the first partition heating element 20 is connected to the end of the first connecting claw away from the first center. The temperature of the first partition deformation element 30 increases or decreases with the change in the magnitude of the current flowing through it. When the temperature of the first partition deformation element 30 increases or decreases, the first connecting claw undergoes elongation or shortening deformation. This elongation or shortening deformation causes the first connecting claw to move the first partition heating element 20 in a direction away from or towards the first center, thereby increasing or decreasing the distance between the first partition heating element 20 and the first center. Specifically, when the first connecting claw elongates, the distance between the first partition heating element 20 and the first center increases along the extension direction of the first connecting claw as it elongates. When the first connecting claw shortens, the distance between the first partition heating element 20 and the first center decreases along the extension direction of the first connecting claw as it shortens.

[0056] In the specific process, when energized, the current passing through the first partition deformation element 30 generates Joule heat, causing the temperature of the first partition deformation element 30 to rise. As the temperature rises, the material (shape memory metal) of the first partition deformation element 30 undergoes a phase transformation, changing from martensite to austenite. This phase transformation causes a change in the crystal structure of the material, macroscopically manifested as the elongation of the first connecting claw. At this time, the distance between the first center and the first partition heating element 20 is extended. Conversely, when de-energized, the first partition deformation element 30 gradually cools down, and the temperature decreases. As the temperature decreases, the material (shape memory metal) of the first partition deformation element 30 reverts from the austenite phase to the martensite phase, and the crystal structure changes again, macroscopically manifested as the shortening of the first connecting claw, thereby shortening the distance between the first center and the first partition heating element 20. In this embodiment, the first partition deformation element 30 can dynamically adjust the distance between the first partition heating elements 20 according to the operation of energizing or de-energizing (by adjusting the current magnitude), realizing flexible control of the temperature partitioning of the electrostatic chuck.

[0057] In an embodiment, the first partition deforming member 30 is connected with two first partition heating members 20, i.e. two first partition heating members 20 are respectively connected to two ends of the first connection claw away from the first center. In this embodiment, the first partition deforming member 30 can be understood as a straight rod or a V-shaped rod. Of course, the first partition deforming member 30 is not limited to connecting only two first partition heating members 20, but can also connect an even number of first partition heating members 20 greater than 2, for example, 4, 6, 8, but not limited to 4, 6, 8. For example, the first partition deforming member 30 can be connected with six first partition heating members 20 at the same time, i.e. the first partition deforming member 30 has six first connection claws, and the first center of the six first connection claws is arranged in an equidistant ring shape, and two by two opposite arrangement. In another embodiment, when the number of first partition heating members 20 connected to the first partition deforming member 30 is 4, the first partition deforming member 30 has a cross-shaped structure, i.e. the first partition deforming member 30 has four first connection claws.

[0058] In an embodiment, the partition variable heating structure further comprises a monitoring part (not shown) for real-time monitoring the temperature of the first partition heating member 20. The monitoring part can use high-precision thermocouples, thermistors or infrared temperature sensors, etc. These sensors can quickly respond and accurately measure the real-time temperature of the first partition heating member 20. By feeding back the monitored temperature data to the partition control member 10, the control system can automatically adjust the current flowing through the first partition heating member 20 according to the deviation between the preset temperature target value and the actual measured value, so as to realize accurate temperature control. This real-time monitoring and feedback mechanism not only improves the accuracy and stability of temperature control, but also can timely find and correct temperature abnormalities, ensure the uniformity and consistency of wafer surface temperature in the plasma processing process, and further improve the quality and reliability of semiconductor manufacturing process.

[0059] In an embodiment, the temperature field when only the radial partition temperature control module is enabled is as shown in Figure 5 the embodiment. The temperature field when the grid temperature control module and the radial partition temperature control module are enabled at the same time is as shown in Figure 6 the embodiment.

[0060] In Figure 6In the embodiment, the distance between the first and second independent temperature control units 1 and 2 and the wafer is 10 mm. The 10 mm distance can avoid the introduction of radio frequency edge effects and particle contamination when the distance is too close, and can avoid the reduction of timeliness, efficiency and uniformity of the temperature control process when the distance is too far. The precise value of 10 mm can ensure the effective heating of the wafer, and can avoid the influence of the dispersion of the electric field and the disturbance of the process gas flow field on the temperature control process, thereby achieving rapid and uniform temperature control effect.

[0061] In an embodiment, the three-dimensional model of the temperature field when the grid temperature control module and the radial partition temperature control module are simultaneously enabled is as shown in Figure 7 As shown in the figure, the temperature T at each position in the two-dimensional coordinate system satisfies:

[0062] T(x, y) = T0+ Asin(k1x+k2y+ϕ);

[0063] where T0 is the reference temperature, A is the fluctuation amplitude, k1 is the wave number in the X-axis direction, k2 is the wave number in the Y-axis direction, ϕ is the phase offset, x is the X-axis coordinate, and y is the Y-axis coordinate.

[0064] It is worth noting that the spacing d1 between each first independent temperature control unit 1 is a non-negative value, and the spacing d2 between each second independent temperature control unit 2 is a non-negative value, so as to avoid the mutual stacking of the same type of temperature control units to cause overheating in the local area.

[0065] In an embodiment, the spacing d1 between each first independent temperature control unit 1 is less than a first preset value, and the spacing d2 between each second independent temperature control unit 2 is less than a second preset value, so as to avoid the spacing between each first independent temperature control unit 1 being too large to cause local overcooling. The first preset value and the second preset value are both positive values, and the value range of the first preset value is between 2 mm and 6 mm, and the value range of the second preset value is between 3 mm and 8 mm. The first preset value is set to be between 2 mm and 6 mm, and the second preset value is set to be between 3 mm and 8 mm, so that the thermal influence of adjacent units can be contacted or at least partially overlapped, so that any point on the wafer surface is covered by thermal radiation, and the local area that is not covered by thermal radiation due to the spacing between adjacent first independent temperature control units 1 or the spacing between adjacent second independent temperature control units 2 is prevented, thereby preventing local overcooling.

[0066] In an embodiment, as shown in Figure 1As shown, the multi-zone temperature control electrostatic chuck further comprises a top plate 3, a bottom plate 4 and a side plate 5; the top plate 3 is used to carry a wafer, the top plate 3 and the bottom plate 4 are connected through the side plate 5, and the top plate 3, the bottom plate 4 and the side plate 5 are arranged to form an accommodating cavity 40 for accommodating the grid temperature control module and the radial partition temperature control module; wherein the first partition heating element 20 is arranged in abutment with the bottom of the top plate 3, and the cavity wall of the accommodating cavity 40 has a gap in the radial direction between the grid temperature control module and the radial partition temperature control module for movement of the first partition heating element 20.

[0067] The embodiment provides a stable physical space for the grid temperature control module and the radial partition temperature control module through the accommodating cavity 40 formed by the top plate 3, the bottom plate 4 and the side plate 5, so as to ensure that these temperature control modules can operate safely and stably inside the electrostatic chuck. At the same time, the first partition heating element 20 is in abutment with the bottom of the top plate 3, so as to directly heat the wafer carried on the top plate 3 and improve the efficiency of heat transfer. In addition, the gap between the side wall of the accommodating cavity 40 and the temperature control module provides necessary space for movement of the first partition heating element 20, so that when the first partition deformation element 30 is elongated or shortened, the first partition heating element 20 can move along with it without interference with the side wall of the accommodating cavity 40, thereby realizing dynamic adjustment of the temperature control partition. This structural design not only improves the temperature control precision and flexibility of the electrostatic chuck, but also enhances the stability and reliability of the equipment, so as to effectively compensate for temperature differences in a complex plasma processing process and improve the quality and consistency of wafer processing.

[0068] In this embodiment, the cavity wall of the accommodating cavity 40 has a gap in the radial direction between the grid temperature control module and the radial partition temperature control module for movement of the first partition heating element 20. This embodiment can be understood as follows: Figure 1 In the embodiment, the elongation or shortening movement of the first partition heating element 20 occurs in the horizontal direction, i.e. the radial direction of the electrostatic chuck, and is matched with the horizontally arranged top plate 3. The gap can be understood as the space between the side of the first partition heating element 20 away from the first partition deformation element 30 and the side wall of the accommodating cavity 40. The space is arranged so that the first partition heating element 20 only contacts the bottom of the top plate 3 during movement and does not contact the side plate 5. It should be understood that the bottom of the top plate 3 refers to the side of the top plate 3 close to the accommodating cavity 40, and the side of the first partition heating element 20 away from the first partition deformation element 30 is the side of the first partition heating element 20 away from the first partition deformation element 30. Figure 1 In the embodiment, the bottom of the top plate 3 is the lower end surface of the top plate 3.

[0069] In an embodiment, the first partition deforming member 30 is fixed in the accommodating cavity 40, preferably the middle part (understood as the first center) of the first partition deforming member 30 is fixed in the accommodating cavity 40. In this embodiment, the first center is in a fixed state, and other parts have the ability to move in the accommodating cavity 40. The middle part of the first partition deforming member 30 is understood as Figure 2 In an example, the middle axis of the first partition deforming member 30 is at

[0070] In an embodiment, the first partition heating member 20 is suspended in the accommodating cavity 40 by the first partition deforming member 30, connected only with the first partition deforming member 30, and abuts with the bottom of the top plate 3, and can slide along the radial direction of the electrostatic chuck.

[0071] In an embodiment, the accommodating cavity 40 can be of any structure and is adapted to the structure of the electrostatic chuck.

[0072] In an embodiment, the accommodating cavity 40 is a closed space.

[0073] In an embodiment, the first partition heating member 20 can be a heating wire made of high resistivity material, such as nichrome or constantan, etc. Nichrome or constantan has good electrothermal performance and high temperature stability, can quickly generate heat when powered on, and can maintain its performance unchanged in a long time high temperature environment. Of course, in other embodiments, it is not limited to the heating wire.

[0074] In an embodiment, the first partition heating member 20 can also be designed to have different geometric shapes, such as straight line, spiral or wave shape, etc., to adapt to different temperature distribution requirements and space layout. In addition, in order to improve the heating efficiency and uniformity, the first partition heating member 20 can be packaged in a layer of insulating material with good thermal conductivity, such as ceramic or quartz glass, which can not only ensure the effective transfer of heat, but also prevent the occurrence of electric breakdown and short circuit phenomenon, thereby ensuring the safety and reliability of the electrostatic chuck in the plasma processing process.

[0075] In an embodiment, as shown in Figure 1 The grid temperature control module is integrated in the first plane 6; the radial partition temperature control module is integrated in the second plane 7; the first plane 6 and the second plane 7 are the same plane or two different planes parallel to each other.

[0076] This embodiment forms the grid temperature control module and the radial partition temperature control module in the spatial configuration in the vertical direction (as shown in Figure 1The spatial configuration of the electrostatic chuck allows for more precise and flexible temperature control in two dimensions. Specifically, the grid temperature control module, through its array of first independent temperature control units 1, can perform high-precision temperature regulation in local areas, suitable for processing small temperature differences on the wafer surface. The radial partition temperature control module, through its ring-shaped second independent temperature control units 2, can effectively compensate for the temperature gradient of the wafer in the radial direction, ensuring the temperature consistency of the wafer center area and the edge area. When the grid temperature control module and the radial partition temperature control module are integrated on the same plane or parallel planes, they can work together to achieve full- range, multi-level regulation of the wafer surface temperature, better adapting to various complex temperature distribution situations that may occur during plasma processing.

[0077] It should be noted that when the grid temperature control module and the radial partition temperature control module are arranged on the same plane, the array of first independent temperature control units 1 included in the grid temperature control module and the ring-shaped second independent temperature control units 2 included in the radial partition temperature control module are arranged in a cross manner without affecting each other's movement space during operation.

[0078] The arrangement of this embodiment can maximize the use of limited space and achieve more efficient and complex temperature control. By cross-arranging, fine temperature regulation in local areas (handled by the grid temperature control module) and radial temperature gradient compensation (handled by the radial partition temperature control module) can be achieved simultaneously on the same plane, thereby improving the accuracy and flexibility of the electrostatic chuck in regulating the temperature of the wafer surface. At the same time, this layout also ensures that the temperature control units do not interfere with each other during operation, maintaining their respective movement spaces, allowing the first connecting claws to freely extend and retract, and the first partition heating element 20 to adjust its position as needed, thereby achieving dynamic temperature partition control and better adapting to complex temperature requirements during plasma processing, improving the quality and efficiency of wafer processing.

[0079] In one embodiment, as shown in Figure 8 The partition variable heating structure further includes a first heat insulation member 50 arranged between the first partition heating element 20 and the first partition deformation element 30 and connected to the first partition heating element 20 and the first partition deformation element 30, respectively. The first heat insulation member 50 is used to block the heat conduction bridge between the first partition heating element 20 and the first partition deformation element 30.

[0080] In this embodiment, the first heat insulation element 50 prevents the heat generated by the first partition heating element 20 from being directly conducted to the first partition deformation element 30, thereby avoiding the first partition deformation element 30 from losing its shape memory function or undergoing unnecessary deformation due to excessive temperature. Through the isolation effect of the first heat insulation element 50, it can be ensured that the temperature change of the first partition deformation element 30 is controlled only by its own current, without interference from the adjacent first partition heating element 20, thus achieving independent and precise control of the first partition deformation element 30 and the first partition heating element 20. This design improves the temperature control accuracy and reliability of the entire partitioned variable heating structure, helps to achieve more refined temperature partition management, and further improves the uniformity of wafer surface temperature and process quality during plasma processing.

[0081] In one embodiment, the first heat insulation element 50 can be a heat insulation layer made of a material with high thermal resistance and low thermal conductivity, such as ceramic fiber, aerogel, or polyimide. These materials have excellent heat insulation properties, effectively blocking heat conduction in high-temperature environments while maintaining good mechanical stability and chemical inertness. The first heat insulation element 50 can be designed as a sheet or a coating, tightly attached between the first partition heating element 20 and the first partition deformation element 30, ensuring that heat conduction between the two is effectively blocked. Furthermore, to further improve the heat insulation effect, the first heat insulation element 50 can also adopt a multi-layer structure, using a combination of different materials to enhance heat insulation performance while reducing heat transfer at the interface. This design not only effectively protects the first partition deformation element 30 from the direct influence of the heat from the first partition heating element 20, but also ensures the temperature control accuracy and reliability of the entire partitioned variable heating structure, thereby achieving more refined temperature partition management during plasma processing and improving the quality and efficiency of wafer processing.

[0082] In one embodiment, such as Figure 10 As shown, the partitioned variable heating structure also includes a temperature compensation component, which comprises a second partition deformable element 60 and a second partition heating element 70. This embodiment significantly increases the heating area of ​​the entire partitioned variable heating structure by adding the second partition deformable element 60 and the second partition heating element 70. Specifically, the design of the second partition deformable element 60 allows the second partition heating element 70 to extend spatially beyond the outer side of the first partition heating element 20, thereby forming a wider heating area on the wafer surface. This extended heating area helps to distribute heat more evenly, especially in the edge regions of the wafer, which are typically more prone to temperature inhomogeneity during plasma processing. The additional heating capacity of the temperature compensation component better compensates for temperature differences in these regions, ensuring overall wafer temperature uniformity, thereby improving the process quality and yield of plasma processing.

[0083] In an embodiment, the second partition deformation member 60 comprises a second center and at least two second connecting claws extending from the second center to the periphery. The structure of the second partition deformation member 60 can be consistent with that of the first partition deformation member 30, which will not be described here. Of course, in other embodiments, the structure of the second partition deformation member 60 can also be inconsistent with that of the first partition deformation member 30. For example, the second partition deformation member 60 can have an arc-shaped structure, as shown in Figure 10 .

[0084] In an embodiment, as shown in Figure 10 , the second partition deformation member 60 is connected to the side of the first partition heating member 20 away from the first partition deformation member 30. In the case where the second partition deformation member 60 has an arc-shaped structure, the second partition deformation member 60 is curved away from the first partition heating member 20. In Figure 10 embodiments, it can be seen that the two ends of the second partition deformation member 60 are curved towards the first partition deformation member 30.

[0085] The curved shape of the second partition deformation member 60 in this embodiment allows the second partition heating member 70 to be more flexibly distributed in space, especially in the edge region of the wafer, which is usually more prone to temperature non-uniformity during plasma processing. By curving the second partition deformation member 60 towards the first partition deformation member 30, the second partition heating member 70 can be made closer to the edge region of the wafer, thereby more effectively compensating for the temperature difference in the edge region and ensuring the overall temperature uniformity of the wafer. This design not only improves the process quality of plasma processing, but also enhances the adaptability of the electrostatic chuck to wafers of different sizes and shapes, and improves the versatility and flexibility of the equipment.

[0086] In an embodiment, the second partition deformation member 60 is a memory wire. The second partition deformation member 60 can also have different geometric structures as long as it can achieve similar functions, i.e. deformation according to changes in temperature or current to meet the requirements for temperature control accuracy and flexibility under different process conditions, and can be applied to the multi-zone temperature control electrostatic chuck of the present application.

[0087] For example, the second partition deformation element 60 can also be a polygonal, spiral, wavy, or other complex three-dimensional structure. These different shapes and structures can be optimized according to specific process requirements and wafer temperature distribution characteristics to achieve more precise temperature compensation and control. For example, a spiral or wavy second partition deformation element 60 can further increase the heating area and improve the uniformity of temperature distribution. In addition, the shape and structure of the second partition deformation element 60 can be customized according to the size and shape of the wafer to ensure optimal temperature control across the entire wafer surface. This flexibility allows the electrostatic chuck to better adapt to different plasma processing processes and wafer types, improving the versatility and adaptability of the equipment.

[0088] In one embodiment, such as Figure 10 As shown, a second partition heating element 70 is provided at the end of the second connecting claw away from the second center. Both the second partition deformation element 60 and the second partition heating element 70 are electrically connected to the partition control element 10. The temperature of the second partition deformation element 60 increases or decreases with the change in the magnitude of the current flowing through it. When the temperature of the second partition deformation element 60 increases or decreases, it undergoes elongation or shortening deformation, causing the second connecting claw to move the second partition heating element 70 in a direction away from or towards the second center, thereby increasing or decreasing the distance between the second partition heating element 70 and the second center. This embodiment provides more flexible and precise temperature control. The partition control element 10 can achieve precise temperature adjustment of different regions (edge ​​region and center region) of the wafer by independently controlling the current of the second partition deformation element 60 and the second partition heating element 70. This design not only improves the accuracy of the electrostatic chuck in controlling the wafer surface temperature but also enhances the adaptability of the equipment to different process requirements. For example, in plasma etching or thin film deposition processes, temperature control of the edge region is crucial for ensuring process quality and improving yield. This design can significantly reduce process defects caused by uneven temperature, thereby improving the overall quality and efficiency of semiconductor manufacturing.

[0089] In one embodiment, the second partition heating element 70 is not limited to being disposed only at the end of the second connecting claw away from the second center; for example, it may also be disposed on the middle part of the claw body of the second connecting claw, which will not be elaborated here.

[0090] In one embodiment, such as Figure 10As shown, the partitioned variable heating structure further includes a second heat insulation member 80. The second heat insulation member 80 is disposed between the second partitioned deformation member 60 and the first partitioned heating member 20 and is connected to the second partitioned deformation member 60 and the first partitioned heating member 20 respectively. The second heat insulation member 80 is used to isolate the heat conduction bridge between the first partitioned heating member 20 and the second partitioned deformation member 60.

[0091] In this embodiment, the second heat insulation element 80 prevents the heat generated by the first zone heating element 20 from being directly conducted to the second zone deformation element 60, thereby avoiding the second zone deformation element 60 from losing its shape memory function or undergoing unnecessary deformation due to excessive temperature. Through the isolation effect of the second heat insulation element 80, it can be ensured that the temperature change of the second zone deformation element 60 is controlled only by its own current, without interference from the adjacent first zone heating element 20, thus achieving independent and precise control of the second zone deformation element 60 and the first zone heating element 20. This independent control capability improves the temperature control accuracy and reliability of the entire zoned variable heating structure, helps to achieve more refined temperature zone management, and further improves the uniformity of wafer surface temperature and process quality during plasma processing.

[0092] In one embodiment, the second heat insulation member 80 has the same function and structure as the first heat insulation member 50. Of course, in other embodiments, the structures of the second heat insulation member 80 and the first heat insulation member 50 may also be different, which will not be described in detail here.

[0093] In one embodiment, such as Figure 10 As shown, the partitioned variable heating structure further includes a third heat insulation member 90, which is disposed between the second partitioned deformation member 60 and the second partitioned heating member 70 and is connected to the second partitioned deformation member 60 and the second partitioned heating member 70 respectively. The third heat insulation member 90 is used to break the heat conduction bridge between the second partitioned deformation member 60 and the second partitioned heating member 70.

[0094] In one embodiment, the second partition heating element 70 is disposed in contact with the lower end surface of the top plate 3. This arrangement allows the second partition heating element 70 to generate heat, which is then applied directly to the wafer through the top plate 3.

[0095] In this embodiment, the third thermal insulation member 90 can effectively prevent the heat generated by the second sub-zone heating member 70 from being directly conducted to the second sub-zone deformation member 60, thereby avoiding the second sub-zone deformation member 60 from losing its shape memory function or causing unnecessary deformation due to excessively high temperature. Through the isolation effect of the third thermal insulation member 90, the temperature change of the second sub-zone deformation member 60 can be ensured to be controlled only by its own current, without being disturbed by the adjacent second sub-zone heating member 70, thereby realizing independent and precise control of the second sub-zone deformation member 60 and the second sub-zone heating member 70. This independent control capability improves the temperature control precision and reliability of the entire sub-zone variable heating structure, helps to realize more precise temperature sub-zone management, and further improves the uniformity of wafer surface temperature and process quality in the plasma processing process.

[0096] In one embodiment, the third thermal insulation member 90 has the same function and structure as the first thermal insulation member 50 and the second thermal insulation member 80. Of course, in other embodiments, the third thermal insulation member 90 can also have different structures from the first thermal insulation member 50 and the second thermal insulation member 80, which will not be described here.

[0097] In one embodiment, the temperature compensation member can move within the accommodation cavity 40 along with the movement of the first sub-zone heating member 20.

[0098] In one embodiment, a plurality of temperature compensation members are provided, and the plurality of temperature compensation members are divided into at least two groups. Each group of temperature compensation members is arranged on the side of the first sub-zone heating member 20 away from the first sub-zone deformation member 30, and the plurality of temperature compensation members in each group are sequentially arranged in a direction away from the first sub-zone deformation member. In this embodiment, by arranging multiple groups of temperature compensation members on the outer side of the first sub-zone heating member 20, multi-point and multi-level compensation of wafer surface temperature can be realized, thereby more effectively solving the problem of local temperature difference caused by uneven plasma distribution. This layout can ensure accurate temperature control in different areas of the wafer, especially the edge area, thereby improving the uniformity of wafer surface temperature. In addition, the design of multiple groups of temperature compensation members also enhances the redundancy and reliability of the system. Even if some temperature compensation members fail, other temperature compensation members can still work, ensuring that the temperature control function of the entire electrostatic chuck is not affected, thereby improving the overall stability and process quality of the plasma processing device.

[0099] Specifically, in the first sub-zone heating member 20, Figure 10In this embodiment, two temperature compensation components are provided, and the two temperature compensation components are respectively located on the left and right sides of the two first zone heating elements 20. In other embodiments, the number of temperature compensation components can also be set to several. For example, the number of temperature compensation components can be set to three, with two temperature compensation components located on the left side of the first zone heating element 20 and one temperature compensation component located on the right side of the first zone heating element 20; or the number of temperature compensation components can also be set to four, with two temperature compensation components located on the left side of the first zone heating element 20 and two temperature compensation components located on the right side of the first zone heating element 20. Of course, in this embodiment, the number of temperature compensation components is not limited to three or four, and will not be elaborated further here.

[0100] In one embodiment, such as Figure 9 As shown, the partitioned variable heating structure also includes an adsorption electrode 100 for applying an electrostatic field to the wafer to adsorb and fix it. The adsorption electrode 100 is fixedly connected to or integrally formed with the first partitioned heating element 20, and is electrically connected to the partitioned control element 10. This embodiment, by integrating the adsorption electrode 100 with the first partitioned heating element 20 and electrically connecting it to the partitioned control element 10, enables coordinated operation of wafer adsorption and temperature control. On one hand, the adsorption electrode 100 ensures that the wafer is firmly fixed on the electrostatic chuck during plasma processing, preventing displacement due to mechanical vibration or airflow during the process, thereby ensuring process stability and repeatability. On the other hand, due to the integrated design of the adsorption electrode 100 and the first partitioned heating element 20, the partitioned control element 10 can simultaneously control heating and adsorption functions, achieving more efficient energy management and more precise process control. This integrated design not only simplifies the structure of the electrostatic chuck and reduces manufacturing costs, but also improves equipment reliability and ease of operation, contributing to improved overall plasma processing efficiency and wafer processing quality.

[0101] In one embodiment, the adsorption electrode 100 can be a multilayer composite structure, including a conductive layer, an insulating layer, and a protective layer. The conductive layer uses a highly conductive material, such as copper or aluminum, to ensure effective application of an electrostatic field and adsorption of the wafer. The insulating layer uses a highly insulating material, such as polyimide or ceramic, to prevent current leakage and protect the wafer from electrical breakdown. The protective layer uses a wear-resistant and corrosion-resistant material, such as a hard oxide coating, to extend the service life of the adsorption electrode 100 and ensure its stability in harsh plasma environments. This multilayer composite structure of the adsorption electrode 100 not only provides stable electrostatic adsorption force but also maintains good performance in high-temperature and plasma environments, thereby ensuring the safety and stability of the wafer during plasma processing.

[0102] In one embodiment, as shown in Figure 11 The adsorption electrode 100 applies an electrostatic field to the wafer, the voltage applied along the X-axis direction is a constant value, and the voltage applied along the Y-axis direction increases linearly. The X-axis direction can be understood as the direction consistent with the central axis of the top plate.

[0103] In some embodiments, the plasma processing device is used in a thin film deposition process, and under the same temperature conditions, the deposition rate at the edge of the wafer is different from the deposition rate at the center of the wafer. As shown in Figure 12 and Figure 13 As shown in the drawings, the multi-zone temperature control electrostatic chuck adjusts the temperature distribution so that the edge of the wafer is hotter, which can help to improve the deposition rate of the edge area, and thus improve the uniformity of the film thickness. In actual application of the semiconductor manufacturing line, the multi-zone temperature control electrostatic chuck of the present application can also be used with a photolithography device, which can reduce the photoresist pattern transfer error from 10% - 15% in the traditional process to 5% - 8%, effectively improving the photolithography precision. When used with an etching device, the etching selectivity can be increased by 20% - 30%, and the sidewall profile roughness can be reduced by 35% - 45%. Moreover, it can shorten the process time by 15% - 20% and reduce the energy consumption by 25% - 35% on average in the entire semiconductor manufacturing process, greatly improving the overall production efficiency and economic benefits.

[0104] Of course, in other embodiments, the plasma processing device is used in etching and photoresist stripping processes, which are consistent with the role of the electrostatic chuck in the thin film deposition process, and will not be described here.

[0105] In view of the problems existing in the prior art, the embodiments of the present application also provide a plasma processing device for plasma processing of a wafer, comprising at least one multi-zone temperature control electrostatic chuck.

[0106] In the present application, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance. The term "a plurality of" means two or more, unless otherwise explicitly limited.

[0107] The above description of the embodiments is to facilitate those of ordinary skill in the art to understand and apply the present application. Those skilled in the art can easily make various modifications to these embodiments, and apply the general principles described herein to other embodiments without having to exert creative labor. Therefore, the present application is not limited to the embodiments herein, and the improvements and modifications made by those skilled in the art based on the disclosure of the present application without departing from the scope and spirit of the present application are within the scope of the present application.

Claims

1. A multi-zone temperature-controlled electrostatic chuck, applied in a plasma processing device, characterized in that, The multi-zone temperature-controlled electrostatic chuck includes at least one of a grid temperature control module and a radial zone temperature control module. The grid temperature control module includes multiple first independent temperature control units arranged in an array; The radial partition temperature control module includes multiple ring-shaped second independent temperature control units, and the multiple ring-shaped second independent temperature control units are arranged with the same center. The first independent temperature control unit and the second independent temperature control unit both include a zoned variable heating structure; the zoned variable heating structure includes a zone control component, at least two first zone heating components, and a first zone deformation component, wherein the first zone deformation component includes a first center and at least two first connecting claws extending away from the first center from the first center. The partition control component is electrically connected to the first partition deformation component and the first partition heating component, and is used to control the current flowing through the first partition heating component and the current flowing through the first partition deformation component, respectively. The first partition heating element is connected to the end of the first connecting claw away from the first center; the temperature of the first partition deformation element increases or decreases with the change of the current flowing through it, and elongation or shortening deformation occurs when the temperature of the first partition deformation element increases or decreases, so that the first connecting claw causes the first partition heating element to move in a direction away from or closer to the first center due to elongation or shortening deformation, thereby increasing or decreasing the distance between the first partition heating element and the first center.

2. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, The multi-zone temperature-controlled electrostatic chuck also includes a top plate, a bottom plate, and side plates; The top plate is used to support the wafer, the top plate and the bottom plate are connected by the side plate, and the top plate, bottom plate and side plate surround to form a receiving cavity for accommodating the grid temperature control module and the radial partition temperature control module; The first partition heating element is abutted against the bottom of the top plate, and the cavity wall of the receiving cavity has a radial gap between the grid temperature control module and the radial partition temperature control module to allow the first partition heating element to move.

3. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, The first partition deformation element is a shape memory metal wire.

4. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, The grid temperature control module is integrated on the first plane; the radial partition temperature control module is integrated on the second plane; the first plane and the second plane are either the same plane or two different planes that are parallel to each other.

5. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, The partitioned variable heating structure further includes a first heat insulation component, which is disposed between the first partitioned heating component and the first partitioned deformation component and is connected to the first partitioned heating component and the first partitioned deformation component respectively. The first heat insulation component is used to break the heat conduction thermal bridge between the first partitioned heating component and the first partitioned deformation component.

6. The multi-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, The partitioned variable heating structure further includes a temperature compensation component, which includes a second partitioned deformation component and a second partitioned heating component. The second partitioned deformation component is connected to the side of the first partitioned heating component away from the first partitioned deformation component. The second partitioned deformation component includes a second center and at least two second connecting claws extending away from the second center. The end of the second connecting claw away from the second center is provided with the second partitioned heating component. Both the second partitioned deformation component and the second partitioned heating component are electrically connected to the partitioned control component. The temperature of the second partitioned deformation component increases or decreases with the change in the magnitude of the current flowing through it. When the temperature of the second partitioned deformation component increases or decreases, it undergoes elongation or shortening deformation, causing the second connecting claw to move the second partitioned heating component away from or closer to the second center due to the elongation or shortening deformation, thereby increasing or decreasing the distance between the second partitioned heating component and the second center.

7. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The second partition deformation element is a shape memory metal wire.

8. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The partitioned variable heating structure further includes a second heat insulation component, which is disposed between the second partitioned deformation component and the first partitioned heating component and is connected to the second partitioned deformation component and the first partitioned heating component respectively. The second heat insulation component is used to break the heat conduction bridge between the first partitioned heating component and the second partitioned deformation component.

9. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The partitioned variable heating structure further includes a third heat insulation component, which is disposed between the second partitioned deformation component and the second partitioned heating component and is connected to the second partitioned deformation component and the second partitioned heating component respectively. The third heat insulation component is used to break the heat conduction thermal bridge between the second partitioned deformation component and the second partitioned heating component.

10. The multi-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The number of temperature compensation components is set to a certain number, and the temperature compensation components are divided into at least two groups. Each group of temperature compensation components is located on the side of the first partition heating element away from the first partition deformation element, and the multiple temperature compensation components in each group are arranged sequentially in the direction away from the first partition deformation element.

11. The multi-zone temperature-controlled electrostatic chuck according to claim 2, characterized in that, The partitioned variable heating structure further includes an adsorption electrode for applying an electrostatic field to the wafer to adsorb and fix the wafer. The adsorption electrode is fixedly connected to or integrally formed with the first partitioned heating element, and the adsorption electrode is electrically connected to the partitioned control element.

12. A plasma processing apparatus for performing plasma processing on wafers, characterized in that, It includes at least one multi-zone temperature-controlled electrostatic chuck as described in any one of claims 1 to 11.

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