A semiconductor structure, fabrication method and electronic device

Abstract

This application relates to the field of semiconductor technology and discloses a semiconductor structure, fabrication method, and electronic device. The semiconductor structure includes: a substrate, a functional layer, a first electrode, a second electrode, and a first thermoelectric element. The first electrode and the second electrode are disposed on the side of the functional layer away from the substrate. The first thermoelectric element is disposed in the substrate and includes a first P-type body and a first N-type body arranged along a first direction. The extension directions of the first P-type body and the first N-type body intersect the substrate surface. Both the first P-type body and the first N-type body include: a first connecting portion, a second connecting portion, and an intermediate connecting portion. The length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, while the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. The heat flux density of the first thermoelectric element increases, the temperature gradient increases, and the heat dissipation or heating effect of the first thermoelectric element is better, thereby improving the thermal management efficiency of the semiconductor structure.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and provides a semiconductor structure, fabrication method, and electronic device. Background Technology

[0002] To support the efficient utilization and sustainable development of new energy sources, efficient power management has become a crucial technology in power electronics. Wide-bandgap and ultra-wide-bandgap power devices, with their higher operating voltage, faster switching speed, higher power density, and higher efficiency, have become widely used in improving the generation, transmission, conversion, and application of new energy sources.

[0003] However, the heat accumulation problem of small-sized chips under high-power conditions has become a key bottleneck restricting their application and development. Therefore, how to improve the thermal management efficiency of semiconductor devices has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0004] This application provides a semiconductor structure, fabrication method, and electronic device to improve the thermal management efficiency of the semiconductor structure.

[0005] The specific technical solution provided in this application is as follows:

[0006] In a first aspect, embodiments of this application provide a semiconductor structure, including: a substrate and a functional layer disposed on the substrate, the functional layer including transistors;

[0007] The semiconductor structure also includes a thermoelectric structure, which includes a first electrode, a second electrode, and a first thermoelectric element. The first electrode and the second electrode are respectively disposed on the side of the functional layer away from the substrate, and the first thermoelectric element is disposed in the substrate.

[0008] The first thermoelectric element includes a first P-type body and a first N-type body arranged along a first direction parallel to the substrate surface; the extending directions of the first P-type body and the first N-type body intersect the substrate surface; the first P-type body and the first N-type body are connected, the first P-type body is also connected to a first electrode, and the first N-type body is also connected to a second electrode; each of the first P-type body and the first N-type body includes: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, and the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction.

[0009] Secondly, embodiments of this application also provide a method for fabricating a semiconductor structure, comprising:

[0010] A functional layer is formed on a first substrate, the functional layer including transistors;

[0011] A first P-type body and a first N-type body are formed on a second substrate. Each of the first P-type body and the first N-type body includes: a first connecting portion, a second connecting portion, and an intermediate connecting portion. The length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction. The length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. The first P-type body and the first N-type body are arranged along a first direction, which is parallel to the surface of the second substrate. The extending directions of the first P-type body and the first N-type body intersect the surface of the second substrate. The first P-type body and the first N-type body are connected.

[0012] The first P-type body and the first N-type body are bonded to one side surface of the first substrate that is away from the functional layer, and the first substrate and the second substrate constitute a substrate.

[0013] A first electrode and a second electrode are formed on the functional layer. The first electrode is connected to a first P-type body, and the second electrode is connected to a first N-type body.

[0014] Thirdly, embodiments of this application also provide a method for fabricating a semiconductor structure, comprising:

[0015] A functional layer is formed on a first substrate, the functional layer including transistors;

[0016] A first P-type body and a first N-type body are formed on the side of the first substrate away from the functional layer. Each of the first P-type body and the first N-type body includes: a first connecting portion, a second connecting portion, and an intermediate connecting portion. The length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction. The length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. The first P-type body and the first N-type body are arranged along a first direction, which is parallel to the surface of the first substrate. The extending directions of the first P-type body and the first N-type body intersect the surface of the first substrate. The first P-type body and the first N-type body are connected.

[0017] A second substrate is formed on one side surface of the first substrate in which the first P-type body and the first N-type body are formed, and the first substrate and the second substrate constitute a substrate;

[0018] A first electrode and a second electrode are formed on the side of the functional layer away from the substrate. The first electrode is connected to a first P-type body, and the second electrode is connected to a first N-type body.

[0019] Fourthly, embodiments of this application provide an electronic device, including: a semiconductor structure as described in the first aspect above.

[0020] The beneficial effects of this application are as follows:

[0021] This application provides a semiconductor structure, fabrication method, and electronic device. The semiconductor structure includes a substrate and a functional layer disposed on the substrate. The functional layer includes transistors. The semiconductor structure also includes a thermoelectric structure, which includes a first electrode, a second electrode, and a first thermoelectric element. The first electrode and the second electrode are respectively disposed on the side of the functional layer facing away from the substrate. The first thermoelectric element is disposed in the substrate and includes a first P-type body and a first N-type body arranged along a first direction parallel to the substrate surface. The extending directions of the first P-type body and the first N-type body intersect the substrate surface. The first P-type body is also connected to the first electrode, and the first N-type body is also connected to the second electrode. Both the first P-type body and the first N-type body include: a first connecting part, a second connecting part, and an intermediate connecting part. The length of the first connecting part along the first direction is not equal to the length of the intermediate connecting part along the first direction, and the length of the second connecting part along the first direction is equal to the length of the first connecting part along the first direction. In this way, the cross-sectional area of ​​the intermediate connecting part of the first thermoelectric body becomes smaller, the heat flux density becomes larger, and the temperature difference between the two ends of the first thermoelectric body becomes larger, thereby optimizing the heat dissipation or heating effect of the first thermoelectric body and improving the thermal management efficiency of the semiconductor structure. Attached Figure Description

[0022] Figure 1 This is a schematic diagram illustrating the connection between a semiconductor device and a heat treatment device in related technologies.

[0023] Figure 2 A cross-sectional view of a first semiconductor structure provided in an embodiment of this application;

[0024] Figure 3 A cross-sectional view of the first thermoelectric element provided in an embodiment of this application;

[0025] Figure 4 A cross-sectional view of the second thermoelectric element provided in an embodiment of this application;

[0026] Figure 5 A cross-sectional view of a second semiconductor structure provided in an embodiment of this application;

[0027] Figure 6 A cross-sectional view of a third semiconductor structure provided in an embodiment of this application;

[0028] Figure 7 A cross-sectional view of the fourth semiconductor structure provided in the embodiments of this application;

[0029] Figure 8 A cross-sectional view of the fifth semiconductor structure provided in the embodiments of this application;

[0030] Figure 9 This is a schematic diagram showing the connection between the temperature sensor and the temperature processor provided in an embodiment of this application;

[0031] Figure 10 A cross-sectional view of the sixth semiconductor structure provided in the embodiments of this application;

[0032] Figure 11 A schematic flowchart illustrating a method for fabricating a first semiconductor structure according to an embodiment of this application;

[0033] Figure 12 A schematic diagram illustrating the process of fabricating a first semiconductor device structure provided in an embodiment of this application;

[0034] Figure 13 A schematic flowchart illustrating a method for fabricating a second semiconductor structure provided in an embodiment of this application;

[0035] Figure 14 A schematic diagram illustrating the process of fabricating a second semiconductor device structure provided in this application embodiment;

[0036] Figure 15 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0037] The following detailed description, with reference to the accompanying drawings, illustrates a semiconductor structure, its fabrication method, and an electronic device provided by embodiments of the present invention. It should be noted that the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0038] To dissipate heat and heat from semiconductor devices, related technologies incorporate additional heat treatment devices after the semiconductor device is manufactured. This means that additional heat treatment devices are added during the semiconductor device packaging process. (See [reference needed]). Figure 1 As shown, in the specific packaging process, a heat sink is placed on the bottom or top of the fabricated semiconductor device. This allows the heat from the semiconductor device to be transferred to the heat sink for processing, thereby achieving heat dissipation and heating. However, placing the heat sink on the periphery of the semiconductor device results in a larger package size. Furthermore, the additional thermal management structure increases the heat transfer path of the device, reducing thermal management efficiency.

[0039] In this embodiment, a thermoelectric structure is incorporated inside the semiconductor device. Specifically, during the semiconductor device fabrication process, the thermoelectric structure is embedded into the substrate, so that the finished semiconductor device itself includes the thermoelectric structure. Furthermore, because the thermoelectric structure embedded in the substrate is closer to the semiconductor device itself, the heat transfer path is shortened, resulting in better heat dissipation or heating. This eliminates the need for a thermal processor on the periphery of the semiconductor device during packaging, thereby reducing the package size of the semiconductor device.

[0040] The following section, with reference to the accompanying diagram, describes the structural composition of a semiconductor structure.

[0041] This application provides a semiconductor structure, see embodiments thereof. Figure 2 As shown, it includes: a substrate 100 and a functional layer 20 disposed on the substrate 100, the functional layer 20 including transistors.

[0042] The substrate 100 and the functional layer 20 can be made of P-type or N-type materials, and the semiconductor structure can be either a P-type transistor or an N-type transistor. No specific limitation is made here.

[0043] The aforementioned functional layer 20 may include a buffer layer 200, a channel layer 300, a barrier layer 400, and a passivation layer 500. The buffer layer 200, the channel layer 300, the barrier layer 400, and the passivation layer 500 may be implemented on the substrate 100 through multiple epitaxial layers, which is not specifically limited here.

[0044] The semiconductor structure also includes a thermoelectric structure 001, which includes a first electrode T1, a second electrode T2 and a first thermoelectric element 900. The first electrode T1 and the second electrode T2 are respectively disposed on the side of the functional layer 20 away from the substrate 100, and the first thermoelectric element 900 is disposed in the substrate 100.

[0045] To achieve heat dissipation and heating of the device, the semiconductor structure in the embodiments of this application further includes a thermoelectric structure 001, see reference. Figure 2 As shown, the first electrode T1 and the second electrode T2 in the thermoelectric structure 001 are respectively disposed on the side of the functional layer 20 away from the substrate 100. When heat dissipation or heating of the device is required, current is applied to the first electrode T1 and the second electrode T2. For example, a positive current is applied to the first electrode T1 and the second electrode T2 is grounded; or, the first electrode T1 is grounded and a positive current is applied to the second electrode T2.

[0046] It should be noted that whether the first electrode T1 (or the second electrode T2) is connected to positive current or grounded needs to be specifically set in conjunction with whether the first electrode T1 (or the second electrode T2) is connected to the first P-type body 901 or the first N-type body 902.

[0047] See Figure 2 As shown, the first thermoelectric element 900 includes a first P-type body 901 and a first N-type body 902 arranged along a first direction F1, the first direction F1 being parallel to the surface of the substrate 100. The aforementioned first direction F1 is... Figure 2 The direction indicated by F1, the extension directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the substrate 100. The first P-type body 901 and the first N-type body 902 are connected. The first P-type body 901 is also connected to the first electrode T1, and the first N-type body 902 is also connected to the second electrode T2. (See reference...) Figure 2 and Figure 3 As shown, the cross-sectional shapes of the first P-type body 901 and the first N-type body 902, parallel to the second direction F2, are both dumbbell-shaped. (See reference...) Figure 3 As shown, in this embodiment, both the first P-type body 901 and the first N-type body 902 include three parts: a first connecting part, an intermediate connecting part, and a second connecting part. For example, see [reference needed]. Figure 3 As shown, the first P-shaped body 901 includes a first connecting portion 9011, an intermediate connecting portion 9012, and a second connecting portion 9013; the first N-shaped body 902 includes a first connecting portion 9021, an intermediate connecting portion 9022, and a second connecting portion 9023. Taking the first P-shaped body 901 as an example, the length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1, and the length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. Typically, the first connecting portion 9011 and the second connecting portion 9013 are arranged parallel to each other, and the intermediate connecting portion 9012 connects the first connecting portion 9011 and the second connecting portion 9013 and is centrally located, thereby forming the dumbbell shape described above.

[0048] It should also be noted that the working principle of the aforementioned thermoelectric structure 001 is the Peltier effect. The Peltier effect is a thermoelectric conversion phenomenon, that is, when two different conductors (or semiconductors) form a circuit and current flows through them, heat absorption and heat release will occur at the two junctions respectively. In this embodiment, in order to better dissipate heat and heat the semiconductor structure, a plurality of first thermoelectric bodies 900 are provided in the aforementioned substrate 100. The aforementioned first thermoelectric bodies 900 include a plurality of first P-type bodies 901 and a plurality of first N-type bodies 902. Here, the first P-type bodies 901 and the first N-type bodies 902 are devices that utilize the Peltier effect.

[0049] See Figure 2As shown, the plurality of first P-type bodies 901 and the plurality of first N-type bodies 902 are all disposed inside the substrate 100. The plurality of first P-type bodies 901 and the plurality of first N-type bodies 902 are arranged along a first direction F1 parallel to the surface of the substrate 100 until the first P-type bodies 901 and the first N-type bodies 902 are respectively connected to the electrode (the first electrode T1 or the second electrode T2). See reference. Figure 2 As shown, the first P-type body 901 and the first N-type body 902 are vertically arranged inside the substrate 100, that is, the extension direction of the first P-type body 901 and the first N-type body 902 intersects the surface of the substrate 100. Preferably, the extension direction of the first P-type body 901 and the first N-type body 902 is perpendicular to the first direction F1. Of course, in some cases, the extension direction of the second P-type body 1001 and the second N-type body 1002 may not be perpendicular to the first direction F1.

[0050] To ensure the normal operation of the first thermoelectric element 900, the aforementioned plurality of first P-type bodies 901 and plurality of first N-type bodies 902 are arranged alternately along the aforementioned first direction F1 and form a pair, that is, the first P-type body 901 and the first N-type body 902 are connected. In the implementation process, the simplest first thermoelectric element 900 consists of only one first P-type body 901 and one first N-type body 902 connected together.

[0051] Meanwhile, to ensure that the aforementioned plurality of first P-type bodies 901 and plurality of first N-type bodies 902 can dissipate heat or heat under the Peltier effect, the aforementioned first P-type bodies 901 are also connected to the first electrode T1, and the first N-type bodies 902 are also connected to the second electrode T2, see reference. Figure 2As shown, with the first P-type body 901 connected to the first electrode T1 and the first N-type body 902 connected to the second electrode T2, when a positive current is applied to the first electrode T1 and the second electrode T2 is grounded, the current flowing into the first electrode T1 first passes through the first P-type body 901, then through the first N-type body 902, and is then supplied to the first P-type body 901 of the next first thermoelectric body 900, until the first N-type body 902 of the last first thermoelectric body 900 is connected to the grounded second electrode T2. At this time, the ends of the thermoelectric body closer to the chip functional layer, 9011 and 9021, become hot ends, and the ends of the thermoelectric body farther from the functional layer, 9013 and 9023, become cold ends. In this way, the thermoelectric body can pass through the current under the action of the above-mentioned current. The Peltier effect conducts heat to the chip's functional layer, achieving heating. When the first electrode T1 is grounded and a positive current is applied to the second electrode T2, the current flowing into the second electrode T2 first passes through the first N-type body 902, and then is supplied to the first P-type body 901 of the next first thermoelectric body 900, until the first P-type body 901 of the last first thermoelectric body 900 is connected to the grounded first electrode T1. At this time, the ends of the thermoelectric body closer to the chip's functional layer, 9011 and 9021, become cold ends, while the ends of the thermoelectric body farther from the functional layer, 9013 and 9023, become hot ends. In this way, the thermoelectric body can rapidly cool the chip's functional layer through the Peltier effect under the action of the aforementioned current, achieving heat dissipation.

[0052] To improve heat dissipation or heating performance, the first connecting part 9011, the intermediate connecting part 9012, and the second connecting part 9013 are typically integrally formed. (See reference...) Figure 3 As shown, the cross-sectional widths of the first connecting portion 9011 and the second connecting portion 9013 are both greater than the cross-sectional width of the intermediate connecting portion 9012. This cross-section is a plane parallel to the second direction F2. On one hand, the wider first connecting portion 9011 and the wider second connecting portion 9013 increase the contact area at the connection between the first P-type body 901 and the first N-type body 902, reducing contact resistance and thermal stress concentration, thus improving device reliability. On the other hand, the narrower intermediate connecting portion 9012, together with the wider first connecting portion 9011 and the wider second connecting portion 9013, forms the first thermoelectric element 900. That is, the first thermoelectric element 900 adopts a design that is thicker at both ends and thinner in the middle. For the intermediate connecting portion 9012, which has a smaller cross-sectional area, the heat flux density (q=Q / A) is significantly increased. According to Fourier's law of heat conduction (q=... k The increase in heat flux density directly leads to a local temperature gradient (T), The T) is enhanced, thereby creating a higher temperature difference in the area where the intermediate connecting part 9012 is located. Compared with the intermediate connecting part 9012, the cross-sectional area of ​​the first connecting part 9011 and the second connecting part 9013 at both ends is larger and the contact thermal resistance is smaller. This allows the hot end to absorb heat more efficiently and the cold end to dissipate heat more efficiently, so that the first P-type body 901 (or the first N-type body 902) maintains a larger temperature difference as a whole, thereby making the heat dissipation or heating effect of the first P-type body 901 (or the first N-type body 902) better.

[0053] During the fabrication of the thermoelectric structure, to improve the heat dissipation or heating effect of the first thermoelectric element 900, as many first thermoelectric elements 900 as possible should be arranged in the substrate, which, within the limits of process feasibility, is more conducive to the accumulation of the Peltier effect. Specifically, during fabrication, the lengths of the first connecting portion 9011 and the second connecting portion 9013 along the first direction F1 generally do not exceed 50 μm. This ensures a better temperature gradient between the first connecting portions 9011 and 9013 at both ends and the middle connecting portion 9012, while preventing the cross-sectional area of ​​9012 from being too small to avoid excessive Joule heating.

[0054] In this embodiment, the ratio between the length of the first connecting portion 9011 (or the second connecting portion 9013) along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 is typically between 2:1 and 4:1. In actual manufacturing, considering the constraints of the manufacturing process, if the ratio is less than 2:1, the cross-sectional area change of the intermediate connecting portion 9012 may not be ideal due to process errors, meaning the dumbbell-shaped structure is not obvious enough. Consequently, the overall temperature gradient increase of the first thermoelectric element 900 is not significant. Therefore, the ratio between the length of the first connecting portion 9011 along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 is typically greater than 2:1.

[0055] Furthermore, a ratio exceeding 4:1 can lead to thermal stress concentration at the connection between the first connecting portion 9011 (or the second connecting portion 9013) and the intermediate connecting portion 9012, thereby increasing the risk of cracking or even failure at the connection under reliability requirements such as thermal cycling, resulting in a sharp decrease in the reliability of the first thermoelectric element 900. Therefore, the ratio between the length of the first connecting portion 9011 (or the second connecting portion 9013) along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 in the first thermoelectric element 900 is typically between 2:1 and 4:1.

[0056] For example, with 2mm Taking a 1mm-sized gallium nitride power transistor chip as an example, the length of the thermoelectric structure along the second direction F2 is 80μm, where the second direction F2 is perpendicular to the first direction F1. The length of the first connecting part 9011 and the second connecting part 9013 along the first direction F1 is 9μm, and the length of the intermediate connecting part 9012 along the first direction F1 is 3μm. That is, the ratio between the above lengths is 3:1. In this way, about 3000 sets of first thermoelectric elements 900 can be arranged in the substrate of the gallium nitride power transistor chip to form a thermoelectric structure 001, thereby achieving efficient thermal management of the device.

[0057] In addition, since the thermoelectric structure 001 is disposed in the substrate, and considering that a heat dissipation structure 1200 is also disposed on the side of the semiconductor structure substrate 100 away from the functional layer 20, the length of the first thermoelectric body 900 along the second direction F2 is generally no more than 200 μm.

[0058] In addition, see Figure 4 As shown, the above-mentioned thermoelectric structure 001 further includes a second thermoelectric body 1000, which is disposed in the substrate 100.

[0059] See Figure 5 As shown in the embodiment of this application, the thermoelectric structure 002 includes a first thermoelectric body 900 composed of a first P-type body 901 and a first N-type body 902, and also includes a second thermoelectric body 1000. Firstly, the second thermoelectric body 1000 differs from the first thermoelectric body 900. The cross-sectional shape of the second thermoelectric body 1000 parallel to the second direction F2 is a cuboid. The second direction F2 is perpendicular to the surface of the substrate 100. For example, the cross-sectional dimensions of the cuboid are the same as those of the first connecting portion 9011 (or the second connecting portion 9013). That is, the second thermoelectric body 1000 does not design the dimensions of the intermediate structure to be narrower. Therefore, the heat flux density of the second thermoelectric body 1000 is smaller than that of the first thermoelectric body 900, and the temperature gradient generated by the second thermoelectric body 1000 is smaller. Compared to the first thermoelectric body 900, the heat dissipation or heating effect of the second thermoelectric body 1000 is poorer.

[0060] The second thermoelectric element 1000 includes a second P-type body 1001 and a second N-type body 1002 arranged along the first direction F1. The extending directions of the second P-type body 1001 and the second N-type body 1002 intersect the surface of the substrate 100. The second P-type body 1001 and the second N-type body 1002 are connected. The second P-type body 1001 is also connected to the first electrode T1, and the second N-type body 1002 is also connected to the second electrode T2. The cross-sectional shape of the second P-type body 1001 and the second N-type body 1002 parallel to the second direction F2 is a cuboid.

[0061] See Figure 5As shown, the second thermoelectric body 1000 includes a plurality of second P-type bodies 1001 and a plurality of second N-type bodies 1002. (See reference...) Figure 5 As shown, the plurality of second P-type bodies 1001 and the plurality of second N-type bodies 1002 are all disposed inside the substrate 100, and the plurality of second P-type bodies 1001 and the plurality of second N-type bodies 1002 are arranged along a first direction F1 parallel to the surface of the substrate 100. (See reference...) Figure 5 As shown, the second P-type body 1001 and the second N-type body 1002 are vertically arranged inside the substrate 100, that is, the extension direction of the second P-type body 1001 and the second N-type body 1002 intersects the surface of the substrate 100. Preferably, the extension direction of the second P-type body 1001 and the second N-type body 1002 is perpendicular to the first direction F1. Of course, in some cases, the extension direction of the second P-type body 1001 and the second N-type body 1002 may not be perpendicular to the first direction F1.

[0062] To ensure the normal operation of the second thermoelectric element 1000, the aforementioned plurality of second P-type bodies 1001 and plurality of second N-type bodies 1002 are alternately arranged along the aforementioned first direction F1 and form a pair, that is, the second P-type bodies 1001 and the second N-type bodies 1002 are connected. In practice, the simplest second thermoelectric element 1000 consists of only one second P-type body 1001 and one second N-type body 1002 connected together.

[0063] See Figure 6 As shown, the first thermoelectric element 900 and the second thermoelectric element 1000 are arranged along the first direction F1, the first thermoelectric element 900 is located in the central region of the substrate 100, and the second thermoelectric element 1000 is located in the edge region of the substrate 100.

[0064] In this application, to make the thermal management of the thermoelectric structure 001 more efficient, the first thermoelectric element 900 and the second thermoelectric element 1000, arranged along the first direction F1, are respectively disposed in different regions of the substrate 100. Considering that the edge region of the device does not contain the active region of the chip, the heat conduction effect is better, while the active region in the middle of the power device has concentrated heat generation and is relatively difficult to dissipate. In one embodiment, see [reference]. Figure 6 As shown, the dumbbell-shaped first thermoelectric element 900 is located in the central region of the substrate 100 to improve the thermal management efficiency of the active region, and the cuboid-shaped second thermoelectric element 1000 is located in the edge region of the substrate 100 to reduce the thermoelectric element process steps in the edge region, thereby achieving a more efficient device thermal management effect.

[0065] Additionally, see Figure 6As shown, when the thermoelectric structure 001 includes both a first thermoelectric element 900 and a second thermoelectric element 1000, in order to be used together with the first thermoelectric element 900, the second P-type body 1001 located in the edge region is also connected to the first electrode T1, and the second N-type body 1002 located in the edge region is also connected to the second electrode T2.

[0066] See Figure 7 As shown, in another embodiment, multiple first thermoelectric bodies 900 and second thermoelectric bodies 1000 are provided in the thermoelectric structure 001. Each first thermoelectric body 900 and each second thermoelectric body 1000 are arranged alternately along the first direction F1. The first P-type body 901, the first N-type body 902, the second P-type body 1001 and the second N-type body 1002 are connected end to end between the first electrode T1 and the second electrode T2.

[0067] It should be noted that the arrangement of the first thermoelectric element 900 and the second thermoelectric element 1000 is not limited to the ones shown in the figure, and can also be other arrangements as needed.

[0068] In this embodiment, the thermoelectric element further includes: a first conductive connection portion 1101, a second conductive connection portion 1102, a third conductive connection portion 1103, and a fourth conductive connection portion 1104. The first conductive connection portion 1101 is connected to the first end of the first P-type body 901 and the first end of the first N-type body 902; the second conductive connection portion 1102 is connected to the second end of the first P-type body 901 and the second end of the second N-type body 902; the third conductive connection portion 1103 is connected to the first end of the second P-type body 901 and the first end of the second N-type body 902; and the fourth conductive connection portion 1104 is connected to the second end of the first N-type body 902 and the second end of the second P-type body 1001.

[0069] In order to better connect the first P-type body 901, the first N-type body 902, the second P-type body 1001 and the second N-type body 1002 end to end between the first electrode T1 and the second electrode T2, the thermoelectric body also includes a first conductive connection part 1101, a second conductive connection part 1102, a third conductive connection part 1103 and a fourth conductive connection part 1104 that serve as connections.

[0070] For example, see Figure 8As shown, the first end of the first P-type body 901 adjacent to the functional layer 20, i.e., the first end, is connected to the first end of the first N-type body 902 adjacent to the functional layer 20 through the first conductive connection portion 1101; the second end of the first P-type body 901 away from the functional layer 20, i.e., the second end, is connected to the second end of the second N-type body 1002 away from the functional layer 20 through the second conductive connection portion 1102; the first end of the second P-type body 1001 adjacent to the functional layer 20 and the first end of the second N-type body 1002 adjacent to the functional layer 20 are connected together through the third conductive connection portion 1103; the second end of the second P-type body 1001 away from the functional layer 20 and the second end of the first N-type body 902 away from the functional layer 20 are connected together through the fourth conductive connection portion 1104.

[0071] The first conductive connection portion 1101 and the third conductive connection portion 1103 are located in the same film layer, the second conductive connection portion 1102 and the fourth conductive connection portion 1104 are located in the same film layer, and the first conductive connection portion 1101 and the second conductive connection portion 1102 are located in different film layers.

[0072] It should be noted that, in order to make the arrangement of the first thermoelectric element 900 and the second thermoelectric element 1000 in the thermoelectric structure 001 more orderly, the first conductive connection portion 1101 and the third conductive connection portion 1103 are located in the same film layer. For example, see [reference needed]. Figure 8 As shown, the first conductive connection 1101 and the third conductive connection 1103 are located in a film layer on the side of the substrate 100 adjacent to the functional layer 20, while the second conductive connection 1102 and the fourth conductive connection 1104 are located in another different film layer. For example, see [reference needed]. Figure 8 As shown, the second conductive connection portion 1102 and the fourth conductive connection portion 1104 are located in the film layer on the side of the substrate 100 away from the functional layer 20.

[0073] It should also be noted that in some embodiments, the first P-type body 901, the first N-type body 902, the second P-type body 1001, and the second N-type body 1002 can also be in direct contact with each other, that is, the first end of the first P-type body 901, the first end of the first N-type body 902, the first end of the second P-type body 1001, and the first end of the second N-type body 1002 can be in direct contact; or, the second end of the first P-type body 901, the second end of the first N-type body 902, the second end of the second P-type body 1001, and the second end of the second N-type body 1002 can be in direct contact. In this way, the first thermoelectric body 900 and the second thermoelectric body 1000 can be formed without setting the first conductive connection part 1101, the second conductive connection part 1102, the third conductive connection part 1103, and the fourth conductive connection part 1104.

[0074] In addition, at least one of the aforementioned first P-type body 901 and second P-type body 1001 is a P-type Bi.2-x Sb x Te3 or MoS2.

[0075] In this embodiment of the application, in the first case, the material of the first P-type body 901 can be P-type Bi. 2-x Sb x Te3 or MoS2; in the second case, the material of the second p-type body 1001 can be p-type Bi. 2-x Sb x Te3 or MoS2; in the third case, the materials of the first p-type body 901 and the second p-type body 1001 can both be p-type Bi. 2-x Sb x Te3 or MoS2.

[0076] At least one of the first N-type body 902 and the second N-type body 1002 is N-type Bi2Te. 3-x Se x .

[0077] In this embodiment of the application, in the first case, the material of the first N-type body 902 can be N-type Bi2Te. 3-x Se x In the second case, the material of the second N-type body 1002 can be N-type Bi2Te. 3-x Se x In the third case, the materials of both the first N-type body 902 and the second N-type body 1002 can be N-type Bi2Te. 3-x Se x .

[0078] See Figure 9 As shown, the above semiconductor structure also includes a temperature sensor and a temperature processor.

[0079] See Figure 8 As shown, a temperature sensor is attached to the surface of the functional layer 20. A temperature processor is connected to the temperature sensor, the first electrode T1, and the second electrode T2. The temperature sensor is used to collect the temperature of the functional layer 20, and the temperature processor is used to adjust the voltage of the first electrode T1 and the second electrode T2 according to the temperature collected by the temperature sensor.

[0080] Since the temperature sensor is attached to the surface of the functional layer 20 away from the substrate 100, during implementation, the temperature sensor can collect the temperature of the functional layer 20 and convert the collected temperature of the functional layer 20 into a corresponding electrical signal. The electrical signal is then transmitted to the temperature processor, which can adjust the voltage supplied to the first electrode T1 and the second electrode T2 according to the electrical signal corresponding to the temperature, thereby changing the current flowing through the first electrode T1 and the second electrode T2, and thus adjusting the efficiency of heat dissipation or heating of the semiconductor structure.

[0081] See Figure 10 As shown, a heat dissipation structure 1200 is provided on the side of the substrate 100 of the above semiconductor structure away from the functional layer 20.

[0082] To better dissipate heat or heat the semiconductor structure, in this embodiment, in addition to providing a thermoelectric structure 001 in the substrate 100, a heat dissipation structure 1200 can also be provided in the substrate 100, that is, the heat dissipation structure 1200 is bonded to the side of the substrate 100 away from the functional layer 20. Exemplarily, the heat dissipation structure 1200 can be a strip-shaped microchannel structure, and a portion of the heat generated by the semiconductor structure can be dissipated through... Figure 10 The strip-shaped microchannel structure shown dissipates heat into the environment, further optimizing heat dissipation performance. Furthermore, the aforementioned heat dissipation structure can also be a U-shaped microchannel structure; the heat dissipation process is similar to that of the strip-shaped microchannel structure, and will not be elaborated further here.

[0083] Based on the same inventive concept, the present invention also provides a first method for fabricating a semiconductor structure. The implementation principle of this method is similar to that of the aforementioned semiconductor structure. The specific implementation of this method can be found in the aforementioned embodiments of the semiconductor structure, and repeated details will not be repeated.

[0084] The specific method for fabricating the first semiconductor structure provided in this embodiment of the invention includes the following steps, see below. Figure 11 As shown:

[0085] S201: A functional layer 20 is formed on the first substrate, the functional layer 20 including transistors.

[0086] The implementation process may include: using chemical vapor deposition (CVD) process, and the functional layer 20 may be obtained by other methods known to those skilled in the art, which are not limited thereto.

[0087] In this embodiment, a buffer layer 200, a channel layer 300, a barrier layer 400, and a passivation layer 500 are sequentially formed on a first substrate through multiple epitaxial layers. Thus, the functional layer 20 is composed of the buffer layer 200, the channel layer 300, the barrier layer 400, and the passivation layer 500. Furthermore, a transistor is disposed in the aforementioned functional layer 20. Here, we will describe an example where the functional layer 20 includes one transistor. (See reference...) Figure 12 As shown.

[0088] It should be noted that the first substrate is made of the same material as the substrate 100. That is, in the process of manufacturing the semiconductor structure, a portion of the substrate 100, i.e. the first substrate, is first manufactured, and the structure manufactured on the first substrate is a main structure with transistors as the main component.

[0089] S202: A first P-type body 901 and a first N-type body 902 are formed on the second substrate. Taking the first P-type body 901 as an example (the first N-type body 902 is similar), it includes: a first connecting portion 9011, a second connecting portion 9013, and an intermediate connecting portion 9012. The length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1. The length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. The first P-type body 901 and the first N-type body 902 are arranged along the first direction F1, which is parallel to the surface of the second substrate. The extending directions of the first P-type body 901 and the first N-type body 902 intersect the surface of the second substrate. The first P-type body 901 and the first N-type body 902 are connected.

[0090] The specific process may include: first forming a first P-type body 901 and a first N-type body 902 on a second substrate made of the same material as the substrate 100 described above. For example, see [reference needed]. Figure 12 As shown in Figure (a), a second conductive connection portion 1102 (or a fourth conductive connection portion 1104) is first formed on the second substrate; see also Figure 12 As shown in Figure (b), an intermediate connecting portion 9012, a second connecting portion 9013, an intermediate connecting portion 9022, and a second connecting portion 9023 are respectively provided on the side of the second conductive connecting portion 1102 (or the fourth conductive connecting portion 1104) away from the second substrate; see also Figure 12 As shown in Figure (c), the intermediate connecting portion 9012, the second connecting portion 9013, the intermediate connecting portion 9022, and the second connecting portion 9023 are filled and covered with the same material as the first substrate; see also... Figure 12As shown in Figure (d), a first connecting portion 9011 and a first connecting portion 9021 are provided on the side of the intermediate connecting portion 9012 away from the passivation layer 500, thereby forming a dumbbell-shaped first P-type body 901 and a first N-type body 902. The gap between the first P-type body 901 and the first N-type body 902 is filled with the same material as the second substrate until both the first P-type body 901 and the first N-type body 902 are disposed inside the second substrate; see also Figure 12 As shown in Figure (e), a first conductive connection portion 1101 is formed on the side of the first P-type body 901 and the first N-type body 902 away from the second conductive connection portion 1102 (or the fourth conductive connection portion 1104); see Figure (e). Figure 12 As shown in Figure (f), the gaps between each of the first conductive connection portions 1101 are filled with the same material as the second substrate until each of the first conductive connection portions 1101 is completely covered. The first P-type body 901 and the first N-type body 902 are connected by the first conductive connection portion 1101 and the second conductive connection portion 1102 (or the fourth conductive connection portion 1104).

[0091] Thus, a first P-type body 901 and a first N-type body 902 arranged along a first direction are formed on the second substrate, where the first direction is parallel to the surface of the second substrate. Furthermore, the extending directions of the first P-type body 901 and the first N-type body 902 intersect the surface of the second substrate.

[0092] S203: The surface of the second substrate on which the first P-type body 901 and the first N-type body 902 are formed is bonded to the surface of the first substrate on which the functional layer 20 is away from, and the first substrate and the second substrate constitute the substrate 100.

[0093] The specific process may include: forming a main structure, primarily composed of transistors, on a first substrate; and forming a thermoelectric structure 001, consisting of a first P-type body 901 and a first N-type body 902, on a second substrate, as described in [reference needed]. Figure 12 As shown in Figure (g), the surface on one side of the second substrate in which the first P-type body 901 and the first N-type body 902 are formed is further bonded to the surface on one side of the first substrate that is away from the functional layer 20. That is, the first substrate and the second substrate, which are made of the same material, are combined into one to form the substrate 100.

[0094] S204: A first electrode T1 and a second electrode T2 are formed on the functional layer 20. The first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902.

[0095] The specific process may include: (See reference) Figure 12As shown in Figure (h), two vias are first formed in the substrate 100 and functional layer 20 using TSV microvia technology. Then, metal is deposited in the two vias until it extends to the surface of the device. The first electrode T1 and the second electrode T2 of the thermoelectric structure 001 are led out from the surface of the device through the two vias. That is, the first electrode T1 and the second electrode T2 are formed on the surface of the functional layer 20 away from the substrate 100. In order to enable the thermoelectric structure 001 to have heat dissipation or heating functions, the first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902. Then, the source 600, gate 700 and drain 800 of the transistor are formed by metal deposition. In this way, the fabrication of the entire semiconductor structure is completed.

[0096] Based on the same inventive concept, the embodiments of the present invention also provide a second method for fabricating a semiconductor structure. The implementation principle of this method is similar to that of the aforementioned semiconductor structure. The specific implementation of this method can be found in the embodiments of the aforementioned semiconductor structure, and the repeated parts will not be described again.

[0097] The specific method for fabricating the second semiconductor structure provided in this embodiment of the invention includes the following steps, see below. Figure 13 As shown:

[0098] S301: A functional layer 20 is formed on the first substrate, the functional layer 20 including transistors.

[0099] The implementation process may include: using chemical vapor deposition (CVD) process, and the functional layer 20 may be obtained by other methods known to those skilled in the art, which are not limited thereto.

[0100] In this application embodiment, by way of example, see the references. Figure 14 As shown in Figure (A), a buffer layer 200, a channel layer 300, a barrier layer 400, and a passivation layer 500 are sequentially formed on a first substrate through multiple epitaxial layers. Thus, the functional layer 20 is composed of the buffer layer 200, the channel layer 300, the barrier layer 400, and the passivation layer 500. Furthermore, a transistor is disposed in the aforementioned functional layer 20. Here, we will illustrate this using an example where the functional layer 20 includes one transistor. (See Figure [link to relevant documentation]). Figure 14 As shown.

[0101] It should be noted that the first substrate is made of the same material as the substrate 100. That is, in the process of manufacturing the semiconductor structure, a portion of the substrate 100, i.e. the first substrate, is first manufactured, and the structure manufactured on the first substrate is a main structure with transistors as the main component.

[0102] S302: A first P-type body 901 and a first N-type body 902 are formed on the side of the first substrate away from the functional layer 20. Taking the first P-type body 901 as an example (the first N-type body 902 is similar), it includes: a first connecting portion 9011, a second connecting portion 9013, and an intermediate connecting portion 9012. The length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1. The length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. The first P-type body 901 and the first N-type body 902 are arranged along the first direction F1, which is parallel to the surface of the first substrate. The extending directions of the first P-type body 901 and the first N-type body 902 intersect the surface of the first substrate. The first P-type body 901 and the first N-type body 902 are connected.

[0103] The specific process may include: first forming a first P-type body 901 and a first N-type body 902 on the side of a first substrate made of the same material as the substrate 100 away from the functional layer 20, for example, see [reference]. Figure 14 As shown in Figure (B), a second conductive connection portion 1102 (or a fourth conductive connection portion 1104) is first formed on the first substrate; see also... Figure 14 As shown in Figure (C), an intermediate connecting portion 9012, a second connecting portion 9013, an intermediate connecting portion 9022, and a second connecting portion 9023 are respectively provided on the side of the second conductive connecting portion 1102 (or the fourth conductive connecting portion 1104) away from the first substrate; see also Figure 14 As shown in Figure (D), the intermediate connecting portion 9012, the second connecting portion 9013, the intermediate connecting portion 9022, and the second connecting portion 9023 are filled and covered with the same material as the first substrate; see also... Figure 14 As shown in Figure (E), a first connecting portion 9011 and a first connecting portion 9021 are provided on the side of the intermediate connecting portion 9012 away from the passivation layer 500, thereby forming a dumbbell-shaped first P-type body 901 and a first N-type body 902. The gap between the first P-type body 901 and the first N-type body 902 is filled with the same material as the first substrate until both the first P-type body 901 and the first N-type body 902 are disposed inside the first substrate; see also Figure 14 As shown in Figure (F), a first conductive connection 1101 is formed on the side of the first P-type body 901 and the first N-type body 902 away from the second conductive connection 1102 (or the fourth conductive connection 1104). The first P-type body 901 and the first N-type body 902 are connected by the first conductive connection 1101 and the second conductive connection 1102 (or the fourth conductive connection 1104).

[0104] Thus, a first P-type body 901 and a first N-type body 902 arranged along a first direction are formed on the first substrate, where the first direction is parallel to the surface of the first substrate. Furthermore, the extending directions of the first P-type body 901 and the first N-type body 902 intersect the surface of the first substrate.

[0105] S303: A second substrate is formed on one side surface of the first substrate in which the first P-type body 901 and the first N-type body 902 are formed, and the first substrate and the second substrate constitute the substrate 100.

[0106] Specific processes may include, for example, see [reference] Figure 14 As shown in Figure (G), each of the first conductive connection portions 1101 is covered with a second substrate made of the same material as the first substrate. That is, the second substrate is formed on one side surface of the first substrate where the first P-type body 901 and the first N-type body 902 are formed. Since the first substrate and the second substrate are made of the same material, the first substrate and the second substrate constitute the substrate 100.

[0107] S304: A first electrode T1 and a second electrode T2 are formed on the side of the functional layer 20 away from the substrate 100. The first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902.

[0108] The specific process may include: (See reference) Figure 14 As shown in Figure (H), the first substrate is inverted, and two vias are formed in the substrate 100 and functional layer 20 using TSV microvia technology. Then, metal is deposited in the two vias until it extends to the surface of the device. The first electrode T1 and the second electrode T2 of the thermoelectric structure 001 are then led out from the surface of the device through the two vias. Specifically, the first electrode T1 and the second electrode T2 are formed on the surface of the functional layer 20 away from the substrate 100. To enable the thermoelectric structure 001 to have heat dissipation or heating functions, the first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902. The source 600, gate 700, and drain 800 of the transistor are then formed by metal deposition, thus completing the fabrication of the entire semiconductor structure.

[0109] Based on the same inventive concept, see [reference] Figure 15 As shown in the figure, this application provides an electronic device, including a semiconductor structure as described above.

[0110] The specific application scenarios of the aforementioned electronic devices include, but are not limited to: automotive chips, high-voltage inverters, charging piles, and high-voltage photovoltaics.

[0111] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor structure, characterized in that, include: A substrate and a functional layer disposed on the substrate, the functional layer including transistors; The semiconductor structure further includes a thermoelectric structure, which includes a first electrode, a second electrode, and a first thermoelectric element. The first electrode and the second electrode are respectively disposed on the side of the functional layer away from the substrate, and the first thermoelectric element is disposed in the substrate. The first thermoelectric element includes a first P-type body and a first N-type body arranged along a first direction, the first direction being parallel to the substrate surface; the extending directions of the first P-type body and the first N-type body intersect the substrate surface; the first P-type body and the first N-type body are connected, the first P-type body is also connected to the first electrode, and the first N-type body is also connected to the second electrode; each of the first P-type body and the first N-type body includes: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, and the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction; The thermoelectric structure further includes a second thermoelectric element disposed in the substrate. The second thermoelectric element includes a second P-type body and a second N-type body arranged along the first direction. The extending directions of the second P-type body and the second N-type body intersect the surface of the substrate. The second P-type body and the second N-type body are connected. The second P-type body is also connected to the first electrode, and the second N-type body is also connected to the second electrode. The cross-sectional shape of the second P-type body and the second N-type body parallel to the second direction is a cuboid. The second direction is perpendicular to the surface of the substrate. The first thermoelectric element and the second thermoelectric element are arranged along the first direction. The first thermoelectric element is located in the central region of the substrate, and the second thermoelectric element is located in the edge region of the substrate. Alternatively, multiple first thermoelectric elements and multiple second thermoelectric elements are provided. Each first thermoelectric element and each second thermoelectric element are arranged alternately along the first direction. The first P-type body, the first N-type body, the second P-type body, and the second N-type body are connected end to end between the first electrode and the second electrode.

2. The semiconductor structure as described in claim 1, characterized in that, The ratio between the length of the first connecting portion along the first direction and the length of the intermediate connecting portion along the first direction is between 2:1 and 4:

1.

3. The semiconductor structure as described in claim 1, characterized in that, The thermoelectric element further includes: a first conductive connection portion, a second conductive connection portion, a third conductive connection portion, and a fourth conductive connection portion; The first conductive connection portion is connected to the first end of the first P-type body and the first end of the first N-type body; the second conductive connection portion is connected to the second end of the first P-type body and the second end of the second N-type body; the third conductive connection portion is connected to the first end of the second P-type body and the first end of the second N-type body; the fourth conductive connection portion is connected to the second end of the first N-type body and the second end of the second P-type body. The first conductive connection and the third conductive connection are located in the same film layer, the second conductive connection and the fourth conductive connection are located in the same film layer, and the first conductive connection and the second conductive connection are located in different film layers.

4. The semiconductor structure as described in claim 1, characterized in that, At least one of the first P-type body and the second P-type body is a P-type Bi. 2-x Sb x Te3 or MoS2; At least one of the first N-type body and the second N-type body is N-type Bi2Te 3-x Se x .

5. The semiconductor structure as described in claim 1, characterized in that, Also includes: Temperature sensors and temperature processors; The temperature sensor is attached to the surface of the functional layer away from the substrate, and the temperature processor is connected to the temperature sensor, the first electrode, and the second electrode respectively. The temperature sensor is used to collect the temperature of the functional layer; The temperature processor is used to adjust the voltage of the first electrode and the second electrode according to the temperature collected by the temperature sensor.

6. A method for fabricating a semiconductor structure as described in any one of claims 1 to 5, characterized in that, include: A functional layer is formed on a first substrate, the functional layer including transistors; A first P-type body and a first N-type body are formed on a second substrate. Each of the first P-type body and the first N-type body includes a first connecting portion, a second connecting portion, and an intermediate connecting portion. The length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction. The length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. The first P-type body and the first N-type body are arranged along a first direction parallel to the surface of the second substrate. The extending directions of the first P-type body and the first N-type body intersect the surface of the second substrate. The first P-type body and the first N-type body are connected. The first P-type body and the first N-type body are formed on one side surface of the second substrate and bonded to the side surface of the first substrate that is away from the functional layer, and the first substrate and the second substrate constitute a substrate; A first electrode and a second electrode are formed on the functional layer, wherein the first electrode is connected to the first P-type body and the second electrode is connected to the first N-type body.

7. A method for fabricating a semiconductor structure as described in any one of claims 1 to 5, characterized in that, include: A functional layer is formed on a first substrate, the functional layer including transistors; A first P-type body and a first N-type body are formed on the side of the first substrate away from the functional layer. Each of the first P-type body and the first N-type body includes a first connecting portion, a second connecting portion, and an intermediate connecting portion. The length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction. The length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. The first P-type body and the first N-type body are arranged along a first direction parallel to the surface of the first substrate. The extending directions of the first P-type body and the first N-type body intersect the surface of the first substrate. The first P-type body and the first N-type body are connected. A second substrate is formed on one side surface of the first substrate in which the first P-type body and the first N-type body are formed, and the first substrate and the second substrate constitute a substrate; A first electrode and a second electrode are formed on the side of the functional layer away from the substrate. The first electrode is connected to the first P-type body, and the second electrode is connected to the first N-type body.

8. An electronic device, characterized in that, include: The semiconductor structure as described in any one of claims 1 to 5.

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