Method for manufacturing semiconductor device, and semiconductor device

Abstract

A method of manufacturing a semiconductor device according to an embodiment includes a first bonding step, a grinding step, a singulation step, and a support substrate detachment step. The first bonding step is a step for bonding the device surface on which the circuit pattern is formed of a base material comprising a semiconductor material to a support substrate. The grinding step is a step for grinding a surface on the opposite side of the device surface while being supported by the support substrate. The singulation step is a step for cutting the base material while being supported by the support substrate and singulating the base material. The support substrate detachment step is a step for detaching the support substrate from the base material.

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device and a semiconductor device.

[0002] This application claims priority based on Japanese Patent Application No. 2023-125146 filed in Japan on July 31, 2023, the contents of which are incorporated herein by reference. Background Art

[0003] Semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are used for applications such as power conversion. These semiconductor devices are manufactured by forming a circuit pattern on a substrate and then singulating the individual chips. During the singulation process, if the substrate support is unstable, damage may remain in the semiconductor device.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-096265 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] An object of the present invention is to provide a semiconductor device with improved quality.

[0009] Means for solving problems

[0010] The semiconductor device manufacturing method of the embodiment includes a first bonding step, a grinding step, a singulation step, and a support substrate detachment step. The first bonding step is a step of bonding the device surface of a substrate made of semiconductor material, on which a circuit pattern is formed, to a support substrate. The grinding step is a step of grinding the surface opposite the device surface while supported by the support substrate. The singulation step is a step of cutting the substrate while supported by the support substrate to separate the substrate. The support substrate detachment step is a step of detaching the support substrate from the substrate.

[0011] A semiconductor device according to an embodiment includes a semiconductor chip. The semiconductor chip is formed of a semiconductor material. The semiconductor chip is plate-shaped. The semiconductor chip has a device surface, a back surface, and four side surfaces. A circuit pattern is formed on the device surface. The back surface is located opposite the device surface. The four side surfaces connect the device surface and the back surface. Of the four side surfaces, at least one pair of side surfaces facing opposite sides tilts toward each other as it moves from the device surface toward the back surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing a semiconductor device according to an embodiment.

[0013] Figure 2 This is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment.

[0014] Figure 3 It is a schematic diagram showing the device surface forming process according to the embodiment.

[0015] Figure 4 It is a schematic diagram showing the mark forming step of the embodiment.

[0016] Figure 5 It is a schematic diagram of a device surface showing a mark forming step according to an embodiment.

[0017] Figure 6 It is a schematic diagram showing the first pasting step of the embodiment.

[0018] Figure 7 It is a schematic diagram showing the grinding process of the embodiment.

[0019] Figure 8 It is a schematic diagram showing the film forming process of the embodiment.

[0020] Figure 9 This is an example of an enlarged view of the film portion near the groove portion according to the embodiment.

[0021] Figure 10 This is an example of an enlarged view of the film portion near the groove portion according to the embodiment.

[0022] Figure 11 This is an example of an enlarged view of the film portion near the groove portion according to the embodiment.

[0023] Figure 12 It is a schematic diagram showing the singulation process of the embodiment.

[0024] Figure 13 It is a schematic diagram showing the outer side surface etching step according to the embodiment.

[0025] Figure 14 It is a schematic diagram showing the second pasting step in the embodiment.

[0026] Figure 15 It is a schematic diagram showing the support substrate separating step according to the embodiment.

[0027] Figure 16 It is a schematic diagram showing the picking-up process of the embodiment. DETAILED DESCRIPTION

[0028] Hereinafter, a method for manufacturing a semiconductor device and a semiconductor device according to an embodiment will be described with reference to the drawings.

[0029] In this specification, the upper direction in the drawings is described as "upper," and the lower direction in the drawings is described as "lower" to indicate the positional relationship of components, etc. In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0030] Figure 1 This is a schematic diagram of a semiconductor device 1 according to this embodiment. The semiconductor device 1 according to this embodiment is, for example, a MOSFET or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 1 according to this embodiment includes a rectangular semiconductor chip 10T and an electrode 20T provided on one surface of the semiconductor chip 10T.

[0031] The semiconductor chip 10T is made of a semiconductor material. In this specification, the semiconductor material is, for example, silicon (Si), silicon carbide (SiC), GaAs (gallium arsenide), or GaN (gallium nitride), but is not limited thereto.

[0032] The semiconductor chip 10T has a device surface 10a, a back surface 10b located opposite the device surface 10a, and four side surfaces 10c connecting the device surface 10a and the back surface 10b. The area of ​​each side surface 10c is sufficiently smaller than the area of ​​the device surface 10a and the back surface 10b. A circuit pattern is formed on the device surface 10a. For example, a MOSFET device or an IGBT device is formed on the device surface 10a. In the following description, the distance between the device surface 10a and the back surface 10b is referred to as the thickness H of the semiconductor chip 10T.

[0033] The electrode 20T is provided on the back surface 10b of the semiconductor chip 10T. The electrode 20T is in contact with the back surface 10b of the semiconductor chip 10T. For example, if the semiconductor chip 10T is a MOSFET chip, the electrode 20T serves as the drain electrode of the MOSFET. The electrode 20T is made of a conductive material. Examples of the conductive material include, but are not limited to, Cu (copper), Al (aluminum), Ni (nickel), Ag (silver), or Au (gold).

[0034] In the semiconductor chip 10T of the present embodiment, the area of ​​the device surface 10a is larger than the area of ​​the back surface 10b. In addition, all side surfaces 10c of the semiconductor chip 10T are inclined relative to the normal line of the device surface 10a. All side surfaces 10c are inclined in a direction approaching the side surface 10c located on the opposite side of the side surface 10c as they move from the device surface 10a side toward the back surface 10b side. In addition, it is sufficient that at least one group of side surfaces 10c facing opposite sides of the four side surfaces 10c are inclined in a direction approaching each other as they move from the device surface 10a side toward the back surface 10b side.

[0035] Figure 2 This is a flowchart illustrating a method for manufacturing a semiconductor device 1 according to this embodiment. The method for manufacturing a semiconductor device 1 according to this embodiment includes a device surface forming step S10, a mark forming step S20, a first pasting step S30, a grinding step S40, a film forming step S50, a singulation step S60, an outer side surface etching step S70, a second pasting step S80, a support substrate detaching step S90, and a pickup step S100.

[0036] Figure 3 Schematic diagram of the device surface forming process S10 of the present embodiment. The device surface forming process S10 is a process of forming a circuit pattern of a device such as a MOSFET or an IGBT on one face of a disc-shaped substrate 10 (semiconductor wafer) made of a semiconductor material, and using this face as a device face 10a. In addition, in the following description, the face on the opposite side of the device face 10a before the grinding process S40 described later is referred to as the initial back side 10f. Although not shown, the device surface forming process S10 and the mark forming process S20 performed thereafter are performed under the state of the initial back side 10f supporting the substrate 10.

[0037] Figure 4 Schematic diagram showing the mark forming step S20 of this embodiment. The mark forming step S20 of this embodiment is a step of processing the device surface 10a of the substrate 10 to form a groove 11 (mark) with a depth D on the device surface 10a. The groove 11 functions as a mark in the subsequent singulation step S60. In addition, the depth D of the groove 11 is greater than the thickness H (refer to Figure 1 ) is large. Furthermore, the mark formed in the mark forming step S20 can be any recessed portion formed by cutting from the device surface 10a in the depth direction, and is not limited to a groove shape. For example, the mark forming step S20 may be a step of forming a plurality of holes of a depth D instead of the groove 11.

[0038] In the mark forming step S20 of this embodiment, the grooves 11 are formed by a cutting device M used for the singulation process (see the subsequent singulation step S60). The grooves 11 are formed by a rotating disk-shaped blade 9 provided in the cutting device M. Alternatively, a laser may be used to form the grooves 11.

[0039] Figure 5 Schematic diagram showing the device surface 10a after the mark forming step S20. Figure 5 In FIG, the groove portion 11 is shown in bold. Figure 5As shown, multiple alignment lines L11 and L12 are pre-formed on the device surface 10a. These alignment lines L11 and L12 serve as reference positions for forming the circuit pattern during the device surface forming step S10. These alignment lines L11 and L12 include multiple first alignment lines L11 and multiple second alignment lines L12. The first and second alignment lines L11 and L12 extend in mutually orthogonal directions. The alignment lines L11 and L12 divide the device surface 10a into multiple sections, vertically and horizontally.

[0040] The partitions arranged between the alignment lines L11 and L12 are divided into effective partitions S1 on the rectangle serving as the semiconductor device 1 and removed partitions S2 arranged along the outer edge of the device surface 10a. A circuit pattern for one semiconductor device 1 is formed in each effective partition S1. On the other hand, no circuit pattern is formed in the removed partitions S2. The removed partitions S2 are arranged so as to surround the central area where the effective partitions S1 are concentrated. The grooves 11 of this embodiment are formed on the alignment lines L11 and L12 that divide adjacent removed partitions S2.

[0041] Figure 6 This is a schematic diagram illustrating the first attaching step S30 of this embodiment. During the transition from the marking forming step S20 to the first attaching step S30, the substrate 10 is turned upside down. The first attaching step S30 is a step in which the downward-facing device surface 10a is attached to the support substrate 40 using adhesive 30. After the first attaching step S30, the substrate 10 is secured to the support substrate 40.

[0042] In the first laminating step S30, uncured adhesive 30 is first applied to the device surface 10a. Next, the device surface 10a is bonded to the support surface of the support substrate 40 so that they face each other. The adhesive 30 is then cured. For example, an acrylic adhesive, an epoxy adhesive, or a silicone adhesive can be preferably used as the adhesive 30. The support substrate 40 is a plate-shaped member made of, for example, glass or silicon (Si).

[0043] In addition, Figure 6 In FIG. 1 , the groove 11 is shown to be completely filled with the adhesive 30. However, the filling state of the adhesive 30 is not limited to Figure 6 That is, the adhesive 30 may be filled halfway into the groove 11, with a gap provided near the bottom of the groove 11. In addition, the adhesive 30 may not be filled into the groove 11.

[0044] Figure 7: is a schematic diagram showing the grinding process S40 of the present embodiment. The grinding process S40 is a process of grinding the initial back surface 10f to form the back surface 10b (grinded surface). The grinding process S40 of the present embodiment is performed in a state where the substrate 10 is supported by the supporting substrate 40. Through the grinding process S40, the substrate 10 is set to a thickness H. As a result, the groove portion 11 formed from the device surface 10a side is connected to the back surface 10b side, and the groove portion 11 passes through the substrate 10. As described above, the interior of the groove portion 11 in the present embodiment is filled with the adhesive 30. Therefore, the adhesive 30 is exposed from the back surface 10b by passing through the groove portion 11 through the substrate 10.

[0045] Figure 8 : is a schematic diagram showing the film forming process S50 of the present embodiment. The film forming process S50 is a process of forming the film portion 20 on the back side 10b of the substrate 10. The film forming process S50 of the present embodiment is performed in a state where the substrate 10 is supported by the supporting substrate 40. The film portion 20 of the present embodiment is a metal film made of a metal material. However, the material of the film portion 20 is not limited. The film forming process S50 of the present embodiment is performed, for example, by CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), electrolytic plating, electroless plating, etc. The thickness h of the film portion 20 of the present embodiment is, for example, about 1 μm. However, the thickness h of the film portion 20 is not limited to the present embodiment.

[0046] As described above, the adhesive 30 in the groove 11 is exposed on the back surface 10 b . Therefore, a portion of the film 20 is formed on the adhesive 30 . Figure 9 This is an enlarged view of the film portion 20 near the groove portion 11. The film portion 20 is thin enough, about 1 μm, so when the material of the surface to be film-formed is different, the film portion 20 in this portion becomes a state different from that of other portions. For example, the area 20b of the film portion 20 formed on the adhesive 30 has a rougher surface roughness or a smaller or larger film thickness than the area 20a formed on the substrate 10, which can be observed. Therefore, even after the film portion 20 is formed on the back surface 10b, the position of the groove portion 11 can be grasped by observing the film portion 20. In addition, Figure 9 , the groove portion 11 is shown to be completely filled with the adhesive 30. However, the adhesive 30 in the groove portion 11 may be Figure 10 As shown, instead of filling the groove 11, it is also possible to Figure 11 As shown, only a portion of the groove 11 is filled. In these cases, since the concave shape 20 c is formed on the surface of the film 20 , the position of the groove 11 can be easily grasped by observing the film 20 .

[0047] Figure 12Schematic diagram showing the singulation step S60 of this embodiment. The singulation step S60 is a step of separating the substrate 10 and the film portion 20 to separate the substrate 10 and remove the semiconductor chips 10T from the substrate 10. The singulation step S60 of this embodiment is performed while the substrate 10 is supported by the support substrate 40.

[0048] In the singulation step S60 of the present embodiment, the substrate 10 and the film portion 20 are cut by a dicing device M using a blade 9. Alternatively, the substrate 10 and the film portion 20 may be cut using a laser cutting device.

[0049] The singulation step S60 of this embodiment is performed from the back surface 10b side of the substrate 10. Therefore, in the singulation step S60, it is difficult to observe the alignment lines L11 and L12 (see FIG. 1 ) provided on the device surface 10a from the processing side. Figure 5 ). In this embodiment, the groove portion 11 provided on the device surface 10a extends through to the back surface 10b side. Therefore, in the singulation step S60, the position of the groove portion 11 can be grasped from the back surface 10b side via the film portion 20. The cutting device M includes a camera C for observing the film portion 20 from the upper side. The cutting device M grasps the position of the groove portion 11 by observing the film portion 20 using the camera C, and cuts the substrate 10 based on the groove portion 11. That is, the singulation step S60 of this embodiment is performed based on the groove portion 11 extending to the back surface 10b side.

[0050] like Figure 5 As shown, all alignment lines L11 and L12 of this embodiment are arranged on the extension line of the groove portion 11. Therefore, the cutting device M cuts the substrate 10 and the film portion 20 linearly along the groove portion 11 captured by the imaging device C, thereby separating the substrate 10 and the film portion 20 into individual pieces. By cutting the substrate 10 and the film portion 20, a semiconductor device 1 is formed in which the electrodes 20T are provided on the back surface 10b side of the semiconductor chip 10T.

[0051] like Figure 12 As shown, in the singulation process S60, a cutting groove 10G is formed in the substrate 10 using a blade 9. Even when the blade 9 has a certain thickness, the width of the cutting groove 10G gradually increases from the bottom portion toward the opening side. This is because the cut surface is ground by the side surface of the blade 9 on the opening side of the cutting groove 10G. Therefore, the cut surfaces of the substrate 10 that are opposite to each other across the cutting groove 10G gradually separate from each other as they move toward the opening side. Therefore, the pair of side surfaces 10c of the semiconductor chip 10T formed between the cut surfaces are inclined in a direction that gradually approaches each other as they move from the device surface 10a side toward the back surface 10b side.

[0052] Figure 13: is a schematic diagram showing the outer side etching process S70 of the present embodiment. The outer side etching process S70 is a process of etching at least a portion of the outer side surface of the substrate 10. In the outer side etching process S70 of the present embodiment, for example, the cut surface of the substrate 10 cut in the singulation process S60 is etched. By etching the cut surface, the damage of the substrate 10 remaining on the cut surface can be removed, and the damage to the substrate 10 can be suppressed. The outer side etching process S70 of the present embodiment is performed after the singulation process S60 in a state supported by the supporting substrate 40. That is, the substrate 10 is in a state supported by the supporting substrate 40 although it is singulated. Therefore, the etching process can be performed without reinstalling it on a separately prepared support table, which can simplify the manufacturing process.

[0053] Figure 14 Schematic diagram illustrating the second pasting step S80 of this embodiment. During the transition from the singulation step S60 to the second pasting step S80, the substrate 10 is turned upside down. The second pasting step S80 is performed while supported by the support substrate 40. The second pasting step S80 is a step of pasting the substrate 10 to the dicing tape 50 on the side opposite the support substrate 40. In this embodiment, the film portion 20 is provided on the back surface 10b of the substrate 10, so that the substrate 10 is pasted to the dicing tape 50 via the film portion 20.

[0054] Figure 15 This is a schematic diagram illustrating the support substrate detachment step S90 of this embodiment. The support substrate detachment step S90 is a step for detaching the support substrate 40 from the base material 10. In the support substrate detachment step S90 of this embodiment, the adhesive 30 may be dissolved by a solvent, or the adhesive strength may be weakened by irradiating the adhesive 30 through the light-transmitting support substrate 40. Furthermore, the support substrate detachment step S90 may also be a step for detaching the support substrate 40 from the base material 10 by mechanically peeling the adhesive 30 by inserting a sharp tool between the base material 10 and the support substrate 40.

[0055] Figure 16 Schematic diagram of the picking-up process S100 of the present embodiment. The picking-up process S100 is a process for removing the singulated semiconductor devices 1 on the dicing tape 50 individually from the dicing tape 50. In the picking-up process S100, first, a process for weakening the adhesive force of the adhesive layer on the surface of the dicing tape 50 is performed. As a process for weakening the adhesive force of the adhesive layer of the dicing tape 50, for example, a process of irradiating the adhesive layer with ultraviolet light or heating the adhesive layer is performed. In addition, in the picking-up process S100, a semiconductor device 1 is pushed upward from the lower side of the dicing tape 50 using a pin, and negative pressure is applied to the device surface 10a of the semiconductor device 1 for adsorption, thereby picking up the semiconductor device 1. By going through the above processes, the semiconductor device 1 can be manufactured.

[0056] Next, the effects of this embodiment will be described.

[0057] Conventionally, in semiconductor device manufacturing methods, the process of cutting and singulating a substrate into individual pieces to form semiconductor devices 1 is performed while the substrate is mounted on a dicing tape. Since the dicing tape 50 is elastic, cutting the substrate on the dicing tape can lead to problems such as difficulty stabilizing the substrate during cutting and easily damaging the cut surfaces.

[0058] like Figure 2 As shown, the method for manufacturing the semiconductor device 1 of this embodiment includes a first pasting step S30, a grinding step S40, a singulation step S60, and a support substrate separating step S90. Figure 6 As shown in FIG. 1 , the first pasting step S30 is a step of pasting the device surface 10a of the substrate 10 made of semiconductor material, on which the circuit pattern is formed, onto the support substrate 40. Figure 7 As shown, the grinding step S40 is a step of grinding the surface opposite to the device surface 10a (initial back surface 10f) while being supported by the support substrate 40. The singulation step S60 is a step of cutting the substrate 10 while being supported by the support substrate 40 to separate the substrate 10. The support substrate detachment step S90 is a step of detaching the support substrate 40 from the substrate 10.

[0059] According to the above configuration, the substrate 10 is singulated while being supported by the support substrate 40. Therefore, compared to the case where the substrate 10 is singulated on the dicing tape 50, the substrate 10 can be cut while being stably supported. As a result, damage is less likely to remain on the cut surfaces after the singulation step S60, and a semiconductor device 1 with improved quality can be provided.

[0060] Furthermore, according to the above-described configuration, the singulation step S60 is performed while the device surface 10a is adhered to the support substrate 40. Typically, during the singulation step S60, particles are easily generated during cutting, and these particles sometimes scatter into the processing space and contaminate the device surface 10a. In particular, when the singulation step S60 is performed on a dicing tape 50, a portion of the dicing tape 50 is cut off by the blade 9 performing the singulation step S60, and may adhere to the device surface 10a and be difficult to remove. According to the above-described configuration, the device surface 10a is covered by the support substrate 40 via the adhesive 30, thereby suppressing the adhesion of particles generated during the singulation step S60 to the device surface 10a, and thus providing a semiconductor device 1 with improved quality.

[0061] In addition, according to the above-mentioned configuration, after the singulation step S60 is completed, the singulated substrate 10 (semiconductor chip 10T) is placed on the support substrate 40. Therefore, when the semiconductor chip 10T is processed after the singulation step S60 (for example, the outer side etching step S70), the plurality of semiconductor chips 10T on the support substrate 40 can be processed together. In contrast, when the singulation step S60 is performed on the dicing tape 50 as in the past, etching or other processing cannot be performed on the dicing tape 50 in consideration of damage to the dicing tape 50. Therefore, in the conventional manufacturing method, it is necessary to move the singulated semiconductor chip 10T from the dicing tape 50 to the support table before processing. According to the above-mentioned configuration, when the singulated semiconductor chip 10T is subjected to etching or other processing, the process of re-mounting the semiconductor chip 10T on the support table can be omitted, and the manufacturing process can be simplified.

[0062] The method for manufacturing the semiconductor device 1 of this embodiment includes a film forming step S50 after the grinding step S40. The film forming step S50 forms the film portion 20 on the surface opposite to the device surface 10a. The singulation step S60 is a step of cutting the film portion 20 together with the substrate 10.

[0063] According to the above-mentioned structure, the singulation process S60 cuts off the film portion 20 and the substrate 10 from the film portion 20 side in the state of the device surface 10a of the supporting substrate 10. In the conventional manufacturing method, the substrate on which the film portion is formed is singulated from the opposite side of the film portion, but in this case, there is a problem that burrs are easily generated when the film portion is cut. In particular, when the film portion is a metal film, due to the ductility of the metal, burrs are generated from the cut portion toward the supporting portion (cutting tape). Furthermore, when singulation is performed on a cutting tape, burrs sometimes sink into the cutting tape, making it difficult to pick up the semiconductor device formed by singulation. In contrast, according to the above-mentioned structure, the singulation process S60 cuts off from the film portion 20 side in the order of the film portion 20 and the substrate 10, so it is difficult to generate burrs from the film portion 20, and there is no need to process the generated burrs. As a result, the semiconductor device 1 can be manufactured stably.

[0064] The method for manufacturing the semiconductor device 1 includes an outer side surface etching step S70 after the singulation step S60 . The outer side surface etching step S70 is a step of etching at least a portion of the outer side surface of the base material 10 while being supported by the support substrate 40 .

[0065] According to the above configuration, the outer side etching step S70 can be used to etch the cut surfaces of the substrate 10 cut in the singulation step S60, for example, to remove any damage to the substrate 10 remaining on the cut surfaces. Furthermore, the outer side etching step S70 is performed after the singulation step S60 while the substrate 10 is supported by the support substrate 40. That is, the substrate 10 remains supported by the support substrate 40 even after being singulated. Therefore, the etching process can be performed without re-mounting on a separately prepared support table, simplifying the manufacturing process.

[0066] The method for manufacturing the semiconductor device 1 includes a second pasting step S80 before the support substrate detaching step S90 . In the second pasting step S80 , the base material 10 is pasted to the dicing tape on the side opposite to the support substrate 40 while being supported by the support substrate 40 .

[0067] According to the above configuration, the support substrate detaching step S90 can be stably performed on the dicing tape 50. Furthermore, the semiconductor device 1 can be picked up from the dicing tape 50, and the semiconductor device 1 can be easily picked up.

[0068] like Figure 1 As shown, the semiconductor device 1 of this embodiment includes a plate-shaped semiconductor chip 10T made of a semiconductor material. The semiconductor chip 10T has a device surface 10a, a back surface 10b, and four side surfaces 10c. A circuit pattern is formed on the device surface 10a. The back surface 10b is located opposite the device surface 10a. The four side surfaces 10c connect the device surface 10a and the back surface 10b. At least one pair of the four side surfaces 10c facing opposite sides tilts toward each other as it moves from the device surface 10a toward the back surface 10b.

[0069] By performing the singulation step S60 from the back surface 10b side of the substrate 10 using the blade 9, the side surfaces 10c are each inclined toward each other as they move from the device surface 10a side toward the back surface 10b side. That is, by having such side surfaces 10c, the above-described manufacturing method can be employed, and a semiconductor device 1 having improved quality can be provided.

[0070] Modifications that can be adopted in this embodiment will be described.

[0071] In this embodiment, the film-forming step S50 is used to form the film-exit portion 20 on the back surface 10b of the substrate 10, and the semiconductor device 1 includes the electrode 20T. However, the semiconductor device 1 may not include the electrode 20T. In this case, the film-forming step S50 is omitted in the method for manufacturing the semiconductor device 1. Furthermore, in this case, the imaging device C directly captures the groove portion 11 exposed on the back surface 10b in the singulation step S60.

[0072] In this embodiment, the groove 11 is used as the reference for alignment in the singulation step S60. However, the reference for alignment in the singulation step S60 may be a reference other than the groove 11. In this case, the mark forming step S20 can be omitted. For example, in the singulation step S60, the imaging device C may be positioned below the support substrate 40 to capture the device surface 10a of the substrate 10 through the transparent support substrate 40. In this case, the cutting device M inverts the image captured by the imaging device C and performs singulation alignment based on the alignment lines L11 and L12 in the image.

[0073] Furthermore, in this embodiment, Figure 5 As shown, groove 11 is located only between removed subareas S2 and not between active subareas S1. Therefore, in this embodiment, the cut surface of groove 11, which serves as a marker, does not appear as side surface 10c of the final product, semiconductor device 1. However, groove 11 may also be located on alignment lines L11 and L12 that demarcate active subareas S1.

[0074] In the method for manufacturing the semiconductor device 1 of the present embodiment, the outer side surface etching step S70 is performed after the singulation step S60 . However, the outer side surface etching step may be omitted.

[0075] According to at least one embodiment described above, by having a singulation step S60 of cutting the substrate 10 while being supported by the supporting substrate 40 to singulate the substrate 10, a semiconductor device 1 can be provided that can stably hold the substrate 10 during cutting and suppress damage to the substrate 10 during cutting, thereby improving quality.

[0076] The semiconductor device manufacturing method and the semiconductor device according to the embodiment include the following additional aspects.

[0077] (Note 1)

[0078] A method for manufacturing a semiconductor device, comprising:

[0079] A first pasting step is to paste the device surface of the substrate made of semiconductor material, on which the circuit pattern is formed, onto the supporting substrate;

[0080] a grinding step of grinding the surface opposite to the device surface while being supported by the support substrate;

[0081] a singulation step of cutting the base material while being supported by the support substrate to separate the base material into pieces; and

[0082] The support substrate detaching step is to detach the support substrate from the base material.

[0083] (Note 2)

[0084] The method for manufacturing a semiconductor device according to claim 1,

[0085] After the grinding step, a film forming step of forming a film portion on the surface opposite to the device surface is performed.

[0086] The singulation step is a step of cutting the film portion together with the substrate.

[0087] (Note 3)

[0088] The method for manufacturing a semiconductor device according to claim 1 or 2,

[0089] After the singulation step, an outer side surface etching step is performed. In the outer side surface etching step, at least a portion of the outer side surface of the base material is etched while the base material is supported by the support substrate.

[0090] (Note 4)

[0091] The method for manufacturing a semiconductor device according to any one of claims 1 to 3,

[0092] Before the support substrate detaching step, a second attaching step is performed of attaching the base material to a dicing tape on the opposite side of the support substrate while the base material is supported by the support substrate.

[0093] (Note 5)

[0094] A semiconductor device,

[0095] A plate-shaped semiconductor chip made of semiconductor material is provided.

[0096] The semiconductor chip has:

[0097] A device surface having a circuit pattern formed thereon;

[0098] a back surface, located on the opposite side of the device surface; and

[0099] 4 side surfaces, connecting the device surface and the back surface,

[0100] At least one pair of side surfaces facing opposite sides among the four side surfaces are inclined in directions approaching each other as they move from the device surface side toward the back surface side.

[0101] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the gist of the invention. These embodiments and their variations are intended to be included within the scope and gist of the invention, and are also intended to be included within the invention set forth in the claims and their equivalents.

[0102] Description of reference numerals:

[0103] 1…semiconductor device; 10…substrate; 10a…device surface; 10b…back surface; 10c…side surface; 10T…semiconductor chip; 20…film portion; 40…support substrate; 50…dicing tape; S30…first pasting step; S40…grinding step; S50…film forming step; S60…singularization step; S70…outer side etching step; S80…second pasting step; S90…support substrate separation step.

Claims

1. A method for manufacturing a semiconductor device, comprising: A first pasting step is to paste the device surface of the substrate made of semiconductor material, on which the circuit pattern is formed, onto the supporting substrate; a grinding step of grinding the surface opposite to the device surface while being supported by the support substrate; a singulation step of cutting the base material while being supported by the support substrate to separate the base material into pieces; as well as The support substrate detaching step is to detach the support substrate from the base material.

2. The method for manufacturing a semiconductor device according to claim 1, After the grinding step, a film forming step of forming a film portion on the surface opposite to the device surface is performed. The singulation step is a step of cutting the film portion together with the substrate.

3. The method for manufacturing a semiconductor device according to claim 1, After the singulation step, an outer side surface etching step is performed. In the outer side surface etching step, at least a portion of the outer side surface of the base material is etched while the base material is supported by the support substrate.

4. The method for manufacturing a semiconductor device according to claim 1, Before the support substrate detaching step, a second attaching step is performed of attaching the base material to a dicing tape on the opposite side of the support substrate while the base material is supported by the support substrate.

5. A semiconductor device, A plate-shaped semiconductor chip made of semiconductor material is provided. The semiconductor chip has: A device surface having a circuit pattern formed thereon; a back surface, located on the opposite side of the device surface; and 4 side surfaces, connecting the device surface and the back surface, At least one pair of side surfaces facing opposite sides among the four side surfaces are inclined in directions approaching each other as they move from the device surface side toward the back surface side.

Images