Chemical vapor deposition equipment for metal organic compounds

Abstract

The invention discloses metal organic compound chemical vapor deposition equipment, and relates to the technical field of semiconductor manufacturing equipment. The metal organic compound chemical vapor deposition equipment comprises a multi-stage barrier system at least composed of a first barrier part, a second barrier part and a third barrier part, and a multi-stage gas supply system at least composed of a main gas supply port, a first auxiliary gas supply port and a second auxiliary gas supply port, through multi-stage cooperation of the multi-stage blocking system and the multi-stage gas supply system on the whole flow path in the reaction chamber, the airflow control capability in the reaction chamber environment is effectively improved, and meanwhile, the thermal field stability of the reaction environment is also improved, so that the quality and efficiency of the reaction process are greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a metal organic compound chemical vapor deposition device. Background Art

[0002] Metal-organic chemical vapor deposition (MOCVD) is a technique for depositing semiconductor thin films on substrate surfaces through a gas-phase chemical reaction. This technique introduces precursor gases such as metal-organic compounds (such as TMGa, TMAl) and hydrides (such as NH3) into a reaction chamber, where chemical reactions occur on the heated substrate surface to produce the desired compound semiconductor material (such as GaN, AlGaAs, etc.). During the reaction, the substrate is typically rotated to ensure film uniformity, and reaction byproducts and unreacted gases are exhausted through an exhaust system. Due to its excellent film quality and controllability, MOCVD technology has become a core process for the preparation of semiconductor products such as optoelectronic devices and power devices.

[0003] However, traditional MOCVD equipment has deficiencies in reaction gas control and airflow management, resulting in unstable airflow in the reaction chamber, reduced deposition rate in the substrate edge area, poor film uniformity, easy accumulation of by-products, and the need for frequent maintenance, which seriously affect device performance and production efficiency.

[0004] It should be noted that this part of the present invention only provides background technology related to the present invention and does not necessarily constitute prior art or public known technology. Summary of the Invention

[0005] The purpose of the present invention is to overcome the problems of insufficient gas control and airflow management in the prior art, and to provide a metal organic compound chemical vapor deposition equipment with a multi-stage barrier system and a multi-stage gas supply system. Through the multi-stage coordination of the two systems on the entire flow path in the reaction chamber, the airflow control capability in the reaction chamber environment is effectively improved, and the thermal field stability of the reaction environment is also improved, thereby improving the quality and efficiency of the reaction process.

[0006] In order to achieve the above object, the present invention provides a metal organic compound chemical vapor deposition device, comprising:

[0007] A reaction chamber, a gas supply system, a carrying system, an exhaust system and a heating system, wherein the reaction chamber has an axial direction and a radial direction;

[0008] The device further comprises a barrier system, the barrier system comprising a first barrier member extending generally from bottom to top in the axial direction, the first barrier member surrounding at least a portion of the carrying system and the heating system; the barrier system further comprising a second barrier member extending generally from top to bottom in the axial direction, the second barrier member surrounding at least a portion of the first barrier member; the barrier system further comprising a third barrier member extending generally from bottom to top in the axial direction, the third barrier member surrounding at least a portion of the first barrier member, and a top end of the third barrier member being disposed further outward than a bottom end of the second barrier member in a radial direction, forming a gap between the third barrier member and the inner wall of the reaction chamber;

[0009] The gas supply system includes a main gas supply port and a secondary gas supply port, the main gas supply port supplies at least reaction gas, and the secondary gas supply port supplies at least control gas; wherein, the secondary gas supply port includes a first secondary gas supply port and a second secondary gas supply port, the top end of the second blocking component is arranged between the first secondary gas supply port and the second secondary gas supply port, and the first secondary gas supply port is radially further outward than the second secondary gas supply port.

[0010] Optionally, the carrying system includes a supporting component, the heating system includes a heating component, and the top end of the first blocking component is higher than the top end of the heating component but does not exceed the top end of the supporting component.

[0011] Optionally, the inner wall of the reaction chamber has a first opening, and the top of the first blocking member and / or the third blocking member has a lower height in a portion adjacent to the first opening.

[0012] Optionally, the inner wall of the reaction chamber has a first opening, the top of the first blocking member has a height H61 and an outer diameter R61 at a portion away from the first opening, and the top surface of the supporting member included in the carrying system has a height H31 and an outer diameter R31, satisfying:

[0013] R61≤R31, and H6l<H31;或者,R6l> R31, H61≤H31, and (H31-H61) / (R61-R31)=2-1.

[0014] Optionally, an overlapping component is provided on the outer wall of the first blocking component, and the height of the overlapping component is 15%-25% of the maximum height of the first blocking component.

[0015] Optionally, the exhaust system includes an exhaust component disposed between the first blocking component and the third blocking component, and the overlapping component is overlapped on a top wall of the exhaust component and installed in place.

[0016] Optionally, the bearing system includes a supporting component; in a radial direction, a distance between the second blocking component and the first blocking component is 10%-15% of a diameter of the supporting component.

[0017] Optionally, the inner wall of the reaction chamber has a first opening, and in a radial direction, a distance between the second blocking component and the first blocking component adjacent to the first opening is greater than a distance between the second blocking component and the first blocking component away from the first opening.

[0018] Optionally, the second blocking component and the first blocking component have a maximum distance at a position closest to the first opening and a minimum distance at a position farthest from the first opening, and the distance between the second blocking component and the first blocking component at other positions smoothly transitions between the maximum distance and the minimum distance.

[0019] Optionally, the inner wall of the reaction chamber has a first opening, and the second blocking component is movable between a first position at least partially blocking the first opening and a second position at least partially exposing the first opening.

[0020] Optionally, the second blocking component has a lifting driving component arranged adjacent thereto in the axial direction, and the first secondary gas port is arranged at the top of the reaction chamber;

[0021] Alternatively, the second blocking component has a lifting driving component arranged adjacent to the second blocking component in a radial direction, and the first secondary gas port is arranged at a side of the reaction chamber.

[0022] Optionally, the exhaust system includes an exhaust component, wherein the exhaust component is disposed between the first blocking component and the third blocking component, and the first blocking component and the third blocking component have a larger distance therebetween at positions adjacent to the exhaust component.

[0023] Optionally, the top end height of the third blocking component is higher than the bottom end height of the second blocking component, but does not exceed the top end height of the first blocking component.

[0024] Optionally, the third blocking component is detachably connected to the side wall of the reaction chamber.

[0025] Optionally, in the radial direction, a distribution width of the first secondary gas supply ports is smaller than that of the second secondary gas supply ports.

[0026] Optionally, the gas supply flow rate of the first secondary gas supply port is lower than that of the second secondary gas supply port.

[0027] Optionally, the second secondary gas supply port has a plurality of gas supply sub-areas in the radial direction, each gas supply sub-area can independently control the gas supply flow rate, and during the reaction process, the gas supply flow rate of the inner gas supply sub-area is greater than that of the outer gas supply sub-area;

[0028] Alternatively, the second auxiliary gas supply port has a plurality of gas supply sub-regions in the radial direction, and the gas supply opening size of each gas supply sub-region gradually increases from the inside to the outside.

[0029] Optionally, the innermost edge of the gas opening of the second secondary gas port is aligned with the outer edge of the support component of the carrying system in the radial direction, or is arranged further outward than the outer edge of the support component.

[0030] Optionally, the carrying system includes a rotation driving component, and an outer wall of the rotation driving component has an air outlet.

[0031] Optionally, the gas outlet is arranged at a certain height adjacent to the bottom wall of the reaction chamber, and a portion of the first blocking component below the height of the gas outlet has a smaller diameter.

[0032] Optionally, the air supply pipe of the air outlet is surrounded by at least two shells, and the air supply pipe has an inverted U-shaped cross-section.

[0033] Optionally, the first blocking component, the second blocking component and the third blocking component are all made of pure molybdenum.

[0034] Optionally, the first barrier component, the second barrier component and the third barrier component all contain molybdenum material, and the content of the molybdenum material decreases in sequence.

[0035] Optionally, the first barrier component is made of pure molybdenum or has a molybdenum content greater than 98%, the second barrier component has a molybdenum content of 90%-95%, and the third barrier component has a molybdenum content of 70%-85%.

[0036] Optionally, the second barrier component is a TZM alloy or contains lanthanum oxide, and the third barrier component contains zirconium carbide.

[0037] Beneficial effects: The present invention achieves a coordinated and organic coordination of the entire flow path in the reaction chamber by setting up multi-stage barriers and multi-stage gas supply, thereby improving the airflow control capability in the reaction chamber environment, while also improving the thermal field stability of the reaction environment, and improving the process quality and efficiency. First, in the upstream area of ​​the reaction chamber, the first auxiliary gas flow, the second auxiliary gas flow and the second barrier component together form a coordinated control combination of "two gases and one wall", so that the initial airflow route of the reaction gas can be accurately controlled, the effective reaction efficiency is increased, and improper overflow is reduced. At the same time, the reaction quality of the edge substrate material area is effectively reinforced, the generation of unfavorable vortices is reduced, and the exhaust efficiency of excess gas can be greatly improved, thereby ensuring the airflow stability of the entire reaction process and the quality and efficiency of the reaction deposition; secondly, in the middle and downstream areas of the reaction chamber, the inner branch of the first auxiliary gas flow and the second auxiliary gas flow , and the first and third barrier components together form a coordinated control combination of "two gases and two walls", which can effectively increase the gas exhaust speed, reduce gas overflow, avoid reactions and deposition in non-target deposition areas and disrupt the airflow environment in the entire reaction chamber, while also enhancing the protection effect of internal components and the thermal field stability; in addition, in the downstream area of ​​the reaction chamber, a gas control environment of "three gases and one wall" is formed locally by the inner and outer branches of the first auxiliary gas flow, the second auxiliary gas flow and the third barrier component, and a quasi-static airflow space is formed on the periphery, which stabilizes the air pressure and airflow in the remaining internal space.

[0038] Furthermore, the specific structure, coordination, installation, drive mode, and material settings of the barrier components at each level, as well as the related designs of the auxiliary gas supply port and positive-pressure vent, can optimize the reaction control capability, airflow conduction capability, and component protection capability within the reaction chamber from multiple perspectives, thereby further improving the reaction quality and efficiency and extending the service life of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0040] Figure 1 A schematic diagram of the overall structure of a metal organic chemical vapor deposition device provided in an embodiment of the present invention;

[0041] Figure 2 A schematic structural diagram of a first blocking component provided in an embodiment of the present invention;

[0042] Figure 3A schematic diagram of the structure and positional relationship of the first blocking component and the third blocking component provided in an embodiment of the present invention;

[0043] Figure 4a A schematic diagram of the structural relationship between the auxiliary gas supply port and the lifting drive component provided in an embodiment of the present invention;

[0044] Figure 4b A schematic diagram of the structural relationship between another auxiliary gas supply port and a lifting drive component provided by an embodiment of the present invention;

[0045] Figure 5 A schematic structural diagram of a positive pressure air outlet provided in an embodiment of the present invention.

[0046] Description of reference numerals:

[0047] 1-metal organic compound chemical vapor deposition equipment; 10-reaction chamber; 11-outer wall; 12-first opening; 13-bottom wall; 20-gas supply system; 21-main gas supply port; 22-auxiliary gas supply port; 221-first auxiliary gas supply port; 222-second auxiliary gas supply port; 2210-first auxiliary gas flow; 2220-second auxiliary gas flow; 30-carrying system; 31-support component; 32-rotational drive component; 33-positive pressure gas outlet; 40-exhaust system; 41-exhaust port; 50-heating system; 51-heating component; 60-barrier system; 61-first barrier component; 611-first part of the first barrier component; 612-second part of the first barrier component; 613-overlapping component; 62-second barrier component; 621-first part of the second barrier component - the radial distance between the innermost edge of the gas opening of the second secondary gas port and the outer edge of the supporting part; D6162 - the radial distance between the first barrier part and the second barrier part; D6311 - the radial distance between the third barrier part and the side wall; H31 - the top diameter of the supporting part; H33 - the height of the positive pressure outlet; H61 - the top height of the first barrier part; H613 - the height of the overlapping part; H62 - the bottom height of the second barrier part; H63 - the top height of the third barrier part; OD31 - the diameter of the supporting part; OD61 - the diameter of the first barrier part. DETAILED DESCRIPTION

[0048] In the present invention, unless otherwise specified, directional words such as "up, down, left, right" are generally understood in conjunction with the directions shown in the drawings and actual applications.

[0049] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0050] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0051] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of each range, the endpoint values ​​of each range and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein. Among them, the terms "optional" and "optional" all mean that they may be included or not (or may be present or not).

[0052] like Figure 1 As shown, the present invention provides a metal organic compound chemical vapor deposition device 1, specifically as Figure 1 As shown, the device comprises at least a reaction chamber 10, a gas supply system 20, a carrying system 30, an exhaust system 40, a heating system 50 and a barrier system 60. Note that, Figure 1 This is a schematic diagram of the overall structure of the device 1, shown in cross-section. The schematic diagram only schematically shows the components of the device 1 that are most closely related to the present invention, without the need for a complete display of all components. In addition, the gas ports are only schematically shown for their approximate positions and relationships, and do not represent specific port physical components. For the actual opening method of the ports, please refer to the specific graphic descriptions in the relevant parts below.

[0053] The metal organic compound chemical vapor deposition equipment 1 is mainly used to deposit high-quality compound semiconductor thin films on substrates, and can be used in optoelectronic devices (such as light-emitting diodes, laser diodes, solar cells, etc.), microelectronic devices (such as high-frequency devices, power electronic components, etc.) and other functional materials and other fields. The reaction and deposition process is mainly completed in the reaction chamber 10. The carrying system 30 includes a support component 31 arranged inside the reaction chamber 10, which is used to carry the substrate material to be deposited. The heating system 50 includes a heating component 51, which is usually arranged below the support plate to provide a temperature environment for the reaction process; the gas supply system 20 has a main gas supply port 21, which is used to supply one or more gases to the internal space of the reaction chamber 10, wherein the reaction gas can participate in the chemical reaction and deposit the product on the surface of the substrate carried by the support component 31. The exhaust system 40 includes an exhaust port 41, which is used to discharge the excess gas and by-products in the reaction chamber 10. The metal organic compound chemical vapor deposition equipment 1 of the present invention also includes a barrier system 60, which includes a multi-stage barrier component, and the gas supply system 20 also includes a multi-stage auxiliary gas supply port. The multi-stage barrier component and the multi-stage auxiliary gas supply port cooperate with each other to form multi-stage isolation, multi-stage guidance and multi-stage control at two levels of mechanical isolation and airflow interaction, thereby forming precise control of the reaction process and environment and effectively improving the reaction quality. The specific details will be elaborated in detail later.

[0054] like Figure 1 As shown, the reaction chamber 10 includes at least a sidewall 11, which generally encloses a cylindrical interior space and defines a generally vertical axial direction X and a generally horizontal radial direction Y. The sidewall 11 may also have at least a first opening 12 for operating materials such as wafers.

[0055] The gas supply system 20 is arranged above the reaction chamber and is used to supply one or more gases to the reaction chamber 10 simultaneously or in a time-sharing manner. After being supplied to the reaction chamber, the various gases usually have their own flow paths; the gas supply system 20 includes a main gas supply port 21 and an auxiliary gas supply port 22. Among them, the gas supplied by the main gas supply port includes at least a reaction gas, which is used to react and deposit on the substrate to form a compound. Taking the formation of group III-V semiconductor compounds as an example, the reaction gas generally includes a gas source containing group III elements and a gas source containing group V elements, such as volatile halides of group III metals (such as GaCl2) and hydrides of group V elements (such as ammonia). The gas supplied by the auxiliary gas supply port 22 includes at least a non-reactive gas, which is used to accurately control the reaction process and chamber environment of the reaction chamber. The non-reactive gas can be, for example, nitrogen or argon, which is highly inert.

[0056] In a metal organic compound chemical vapor deposition device 1 provided by the present invention, the auxiliary gas supply port 22 is further divided into a multi-stage supply port, including at least a first auxiliary gas supply port 221 and a second auxiliary gas supply port 222, wherein, in the radial direction R, the first auxiliary gas supply port 221 is arranged closer to the periphery than the second auxiliary gas supply port 222. Based on this setting, the parameters such as the type of gas supplied by the two-stage auxiliary gas supply port and the size of the airflow can be precisely designed based on the control requirements of the reaction process and the chamber environment, thereby optimizing the reaction quality and efficiency. After entering the reaction chamber 10, the first auxiliary gas flow 2210 supplied by the first auxiliary gas supply port 221 and the second auxiliary gas flow 2220 supplied by the second auxiliary gas supply port 222 are separated by the second blocking component 62, thereby achieving differentiated control effects of the two airflows. The two airflows will also cooperate with other components on their routes, and the details will be elaborated in detail later.

[0057] like Figure 1 As shown, the barrier system 60 includes three levels of barrier components, specifically a first barrier component 61, a second barrier component 62, and a third barrier component 63. The first barrier component 61 surrounds at least a portion of the support system 30 and the heating system 50, providing excellent thermal insulation performance. This effectively reduces internal temperature loss and improves the stability of the temperature field within the reaction chamber, particularly on the surface of the support component 31. Specifically, the first barrier component 61 is generally cylindrical in shape, extending from the bottom of the reaction chamber 10 toward the top of the reaction chamber 10 to at least partially surround the area where the support component 31 and the heating component 51 are located. The first barrier component 61 can be completely parallel to the axial direction X, or it can be partially or entirely angled with respect to the axial direction X. In a preferred embodiment, the first blocking member 61 has a height H61 measured from the bottom of the reaction chamber 10 along the axial direction X, which is higher than the top edge of the heating member 51, that is, it completely surrounds the heating member 51. However, the height H61 of the first blocking member 61 does not exceed the top height H31 of the support member 31 to avoid adverse interference with the reaction process at the edge of the support member.

[0058] The second blocking member 62 extends from the top of the reaction chamber 10 toward the bottom of the reaction chamber 10, surrounding at least a portion of the first blocking member 61 in the axial direction X. Furthermore, at least in the surrounding area, the second blocking member 62 is located further outward of the first blocking member 61 in the radial direction R. The second blocking member 62 is generally annular in shape. In a preferred embodiment, the second blocking member can cover the area where the first opening 12 is located.

[0059] The third blocking member 63 extends from or near the bottom of the reaction chamber 10 toward the top of the reaction chamber 10, surrounding at least a portion of the first blocking member 61 in the axial direction X. In the radial direction R, at least the top edge of the third blocking member 63 is positioned further outward than the bottom edge of the second blocking member. In a preferred embodiment, the entire third blocking member 63 is positioned further outward than the second blocking member 62. The third blocking member 63 is positioned adjacent to the sidewall 11 of the reaction chamber 10, with a radial spacing D6311 formed therebetween.

[0060] As previously described, after entering the reaction chamber 10, the first auxiliary gas flow 2210 supplied by the first auxiliary gas supply port 221 and the second auxiliary gas flow 2220 supplied by the second auxiliary gas supply port 222 are separated by the barrier member 62. As shown in the figure, the top of the second barrier member 62 separates the first auxiliary gas supply port 221 and the second auxiliary gas supply port 222, thereby achieving separate supply of the two gas flows. In addition, the exhaust port 41 of the exhaust system 40 is disposed between the first barrier member 61 and the third barrier member 63.

[0061] Thus, based on the three-stage barrier components of the barrier system 60 and the two-stage auxiliary gas supply ports of the gas supply system 20, the metal organic chemical vapor deposition apparatus 1 of the present invention has a multi-stage isolation and multi-stage gas supply coordinated design with a mutually coordinated relationship, and simultaneously achieves precise control of the reaction process and reaction environment at the two levels of mechanical isolation and gas flow interaction. The specific principles are as follows:

[0062] During the reaction process, the reaction gas is supplied to the interior of the reaction chamber 10 from the main gas supply port 21. The main gas supply port 21 is located relatively centrally in the radial direction, so the reaction gas is mainly distributed in the central area of ​​the reaction chamber 10, roughly corresponding to the upper surface area of ​​the support member 31 of the carrier system 30, thereby reacting and depositing on the surface of the substrate material supported by the support member 31. However, the inventors have found that, on the one hand, the reaction gas may spontaneously escape to the peripheral space during the process of moving to the surface of the substrate material, reducing the effective reaction and deposition of the reaction gas in the substrate material area; on the other hand, the support member 31 rotates with the substrate material during the reaction process. After the reaction gas contacts the substrate material and the support member 31, it will also flow toward the periphery due to the rotation of the support member 31 and the substrate material. The closer to the peripheral area, the faster the flow. This will cause the reaction and deposition rate of the substrate material surface located at the periphery of the support member 31, especially the edge area, to slow down, ultimately leading to poor processing results in these areas; in addition, when the excess reaction gas leaves the edge of the support member 31, it is easy to form vortices, which will also affect the overall flow stability of the reaction gas flow and reduce the quality of the reaction and deposition.

[0063] To effectively solve this problem, the present invention introduces a multi-stage auxiliary gas supply and a multi-stage barrier component. First, the second auxiliary gas flow 2220 introduced from the second auxiliary gas port 222 forms an internal gas wall inside the second barrier component. From the moment the reaction gas enters the reaction chamber 10, its distribution area is suppressed and positioned, so that the reaction gas can be more accurately focused on the area where the substrate material is located, avoiding ineffective overflow. The presence of the second barrier component 62 provides physical support for the second auxiliary gas flow 2220, increases the strength of the gas wall, and makes it more effective in suppressing the reaction gas. At the same time, it also adds another layer of physical barrier to further reduce the probability of reaction gas overflow. Finally, the first auxiliary gas flow 2210 provided by the first auxiliary gas port 221 provides a second gas wall outside the second barrier component 62. From the perspective of fluid mechanics, it suppresses and supports the second auxiliary gas flow 2220, increases its inherent strength and control over the reaction gas flow, and the second gas wall itself provides a final airtight defense against the overflow of the reaction gas.

[0064] At the same time, the second secondary gas flow 2220 supplied by the second secondary gas port 222 presses the reaction gas flowing toward the periphery due to the rotation of the support member 31 toward the surface of the support sheet 31 at the edge of the support member 31, reducing its outflow velocity, increasing the opportunities for reaction and deposition, and achieving more uniform reaction and deposition of the substrate material at the edge of the support member 31. The presence of the second blocking member 62 and the first secondary gas flow 2210 supplied by the first secondary gas port 221 respectively provide strength support and stability for the edge pressing force of the second secondary gas flow 2220.

[0065] Finally, after the excess reactant gas, mixed with a certain amount of reaction products, leaves the support plate surface, it is rapidly guided and carried away from the support plate area by the presence of the second secondary gas flow 2220, traveling further downstream until it exits the reaction chamber 10 through the exhaust port 41 of the exhaust system 40. This effectively suppresses the formation of vortices in the reaction area and ensures a stable and efficient reaction. The presence of the second blocking member 62 further provides mechanical guidance for the diversion of the gas flow. The first secondary gas flow 2210 provided by the first secondary gas port 221 and the second secondary gas flow 2220 flow in substantially the same direction, and the two merge below the second blocking member 62, guiding the discharge of the second secondary gas flow 2220 and further enhancing the diversion efficiency of the second secondary gas flow 2220.

[0066] Based on this, the present invention forms a "two-gas and one-wall" control combination by the first auxiliary gas port 221, the second auxiliary gas port 222 and the second blocking component 62, so that the initial airflow route of the reaction gas can be precisely controlled, the effective reaction efficiency is increased, and improper overflow is reduced. At the same time, the reaction quality of the edge substrate material area is effectively enhanced, and the generation of adverse vortices can be reduced. At the same time, the exhaust efficiency of excess gas can be greatly improved, thereby ensuring the airflow stability of the entire reaction process and the quality and efficiency of reaction deposition.

[0067] In some preferred embodiments, the innermost edge of the gas opening of the second secondary gas port 222 is sufficiently close to the outer edge of the support member 31 in the radial direction R, and the radial spacing D22231 between the two is small or zero. When D22231 is 0, that is, the innermost edge of the gas opening of the second secondary gas port 222 is aligned with the outer edge of the support member 31 in the radial direction R, to ensure maximum control effect. However, the innermost edge of the gas opening of the second secondary gas port 222 does not overlap with the outer edge of the support member 31 in the radial direction R, that is, D22231 cannot be negative, so as to avoid the second secondary gas flow 2220 from excessively impacting the normal reaction and deposition of the reactant gas, thereby reducing the efficiency and quality of the reaction and deposition.

[0068] The synergistic effect of the multi-stage isolation and multi-stage gas supply of the present invention is more than that. As shown in the figure, the third barrier component 63 extends from the bottom to the top of the reaction chamber 10, and at least its top edge is located at a more outer position (i.e., closer to the side wall 11 of the reaction chamber 10) than the lower end edge of the second barrier component 62 in the radial R direction. Based on this, when the first auxiliary gas flow 2210 and the second auxiliary gas flow 2220 move downward from the top of the reaction chamber 10, after passing through the lower end of the second barrier component 62, the second auxiliary gas flow 2220 will merge with at least a part of the first auxiliary gas flow 2210, and the mixed gas flow will continue to move downward in the space formed between the third barrier component 63 and the first barrier component 61, and finally be discharged from the reaction chamber 10 through the exhaust port 41 of the exhaust system 40. Therefore, the first auxiliary gas flow 2210 generated by the first auxiliary gas supply port 221 performs a more effective gas guiding and exhaust function within the space between the third blocking member 63 and the first blocking member 61. Furthermore, after breaking free from the obstruction of the second blocking member 62, the first auxiliary gas flow 2210 guides the second auxiliary gas flow 2220 more directly and effectively, effectively increasing the gas exhaust rate, reducing gas overflow, and avoiding reactions and deposition in non-target deposition areas, thereby further disrupting the gas flow environment within the entire reaction chamber 10. Simultaneously, within the space between the third blocking member 63 and the first blocking member 61, a secondary flow of gas is formed, where the first and second auxiliary gas flows 2210 and 2220 suppress the internal mixed gas flow (composed of excess reactant gas and reaction product gas). Combined with the presence of the first and third blocking members 61 and 63, a "two-gas, two-wall" synergistic guiding and suppressing effect is achieved, further enhancing the stability control of the gas environment within the reaction chamber 10 and facilitating the high-precision processing. While participating in the gas guidance and control, the first blocking component 61 also realizes the protection of the internal components it surrounds and the stabilization of the thermal field. These internal components typically include the heating component 51 in the heating system 50 and the rotating drive component 32 in the supporting system 30.

[0069] Another synergistic effect lies in the small radial gap D6311 between the third barrier member 63 and the sidewall 11 of the reaction chamber 10. The space formed within this gap can be referred to as a quasi-static airflow space, where the airflow is primarily formed by the first secondary gas flow 2210 being diverted after passing through the top of the third barrier member 63. In a preferred embodiment, the exhaust port 41 is located inside the third barrier member 63, while no exhaust device is provided outside the third barrier member 63. Therefore, after a portion of the first secondary gas flow 2210 enters the space between the third barrier member 63 and the sidewall 11 of the reaction chamber 10, it gradually becomes stationary and stable, generating only a small amount of airflow exchange with the first secondary gas flow 2210 inside the third barrier member 63. This creates a quasi-static airflow environment. The quasi-static airflow annulus formed here can remain relatively stable in place, stabilizing the air pressure and airflow in the remaining internal space. With the coordinated cooperation of the third blocking component 63, the first auxiliary gas flow 2210 in its inner part, and the second auxiliary gas flow 2220, the quasi-static airflow area is more stable, and a "three-gas and one-wall" gas control environment is formed locally, which further enhances the stability and controllability of the entire reaction chamber space and can further prevent the undesirable deposition of reaction products in non-target areas.

[0070] Regarding the specific configuration of the first blocking member 61, in a preferred embodiment, different parts of the first blocking member 61 may have different shapes. Figure 2 As shown, it is divided into a first portion 611 close to the first opening 12 and a second portion 612 further away from the first opening. In the axial X direction, the top height of the first portion 611 is lower than that of the second portion 612. That is, in the axial X direction, the first portion 611 surrounds the support system 30 less than the second portion 612. This design addresses the problem that the presence of the first opening 12 can easily generate gas vortices and heat leaks near the first opening 12 during the reaction process, disrupting the reaction environment and affecting deposition uniformity. Although the second blocking member 62 can shield and cover the first opening 12 during the reaction, the lack of an airtight design between the two does not alleviate this problem. The present invention reduces the top height of the first part 611 of the first blocking component 61 near the first opening 12, thereby generating an asymmetric flow field structure and reducing the pressure difference between the main airflow and the airflow at the first opening 12, so that the airflow has less resistance here and can pass and be discharged more smoothly, avoiding gas stagnation and vortex generation due to the formation of airflow dead corners; at the same time, a smoother gas flow path can also take away excess heat faster, reduce heat leakage at the first opening 12, make the thermal field environment in the reaction chamber more stable, and increase the processing accuracy of the deposition process.

[0071] In the preferred embodiment, the top end of the first barrier component 61 has a height H61 from the bottom surface of the reaction cavity 10 and an outer diameter OD61, of course, this is for the case that the top end of the first barrier component 61 has a uniform height, and when different parts of the first barrier component 61 have different heights as mentioned above, H61 refers to the height of the top end of the second part 612 away from the first opening 12, in summary, it can also be said that the top end of the first barrier component 61 has a height H61 from the bottom surface of the reaction cavity 10 and an outer diameter OD61 at the part away from the first opening 12. The top surface of the support component 31 has a height H31 from the bottom surface of the reaction cavity 10 and an outer diameter OD31, then the selection of H61 and OD61 can have the following preferred schemes, in the first scheme, OD61≤OD31, that is, in the radial direction R, the surrounding space of the first barrier component 61 does not exceed the coverage of the support component 31, at this time, the first barrier component 63 has a converging effect on the surrounding of the bearing system 30, which can maximize the barrier of excess gas into its surrounding space and avoid adverse effects on the internal components, accordingly, in order to meet the rotation function of the support component 31, H61 should be less than H31. In the second scheme, in order to further take into account the stability and guidance of the edge gas flow of the support component 31, OD61>OD31 can be set, at this time, the top end part of the first barrier component 61 can better participate in the guiding intervention of the edge gas flow, in order not to produce the adverse effect of excessive intervention, H61≤H31 should be set, in the preferred embodiment, it can be further set as follows: ΔH=H31-H61, ΔOD=OD61-OD31, where ΔH / ΔOD=2~1, so that the internal element protection function and the edge gas guiding function of the first barrier component 61 are optimally balanced.

[0072] Regarding the assembly method of the first blocking component 61, it can be directly abutted against the bottom wall 13 of the reaction chamber 10, and a slot matching the shape of the lower end of the first blocking component 61 can be provided on the bottom wall 13, thereby increasing the assembly stability of the first blocking component 61. In a preferred embodiment, one or more overlapping components 613 are added to the outer wall of the first blocking component 61. The overlapping components 613 are at a certain height H613 from the bottom surface of the reaction chamber 10. The assembly of the first blocking component 61 is completed by abutting the overlapping components 613 against the top surface of the adjacent components. For example, the overlapping components 613 can abut against the top wall of the exhaust port 41. Such a design adds more support points, which can reduce the radial warping of the first isolation component 61 caused by thermal expansion and contraction in a high-temperature environment, avoid the first isolation component 61 from generating additional gaps due to deformation, and thus increase the airflow disturbance in the reaction chamber 10. At the same time, it can also relieve the alternating stress at the bottom end of the first isolation component 61 and increase its service life. In a preferred embodiment, the height of the overlapping part 613 is 15%-25% of the maximum height H61 of the first blocking part 61 to achieve an optimal balance between stiffness and thermal deformation. The thickness of the overlapping part 613 needs to be greater than or equal to 5 mm to prevent high-temperature creep that may occur under the special airflow control environment of this scheme.

[0073] Regarding the specific structure of the second blocking member 62, as shown in FIG. Figure 3 As shown, there is a radial spacing D6162 between the second blocking member 62 and the first blocking member 61. When D6162 is too small, although the second blocking member 62 is closer to the main gas supply port 21 and can enhance the control ability of the reaction gas, it is not conducive to the guided discharge of the gas, easily generates back pressure, and increases the risk of by-product accumulation in the gap; when D6162 is too large, although the guided discharge of the gas is smoother, the control effect of the reaction gas is greatly reduced. In a preferred embodiment, the size of D6162D is limited to 10%-15% of the diameter of the top surface of the support member 31 to achieve the best balance between gas suppression and degassing control. For example, if the diameter of the top surface of the support member 31 is 200mm, the size of the spacing D6162 is set to 20-30mm.

[0074] In a preferred embodiment, the second blocking member 62 has a first portion 621 proximate to the first opening 12 and a second portion 622 distal to the first opening 12. To compensate for the adverse disturbance of the internal gas environment caused by the first opening 12, the second blocking member 62 and the first blocking member 61 have different spacings at different circumferential positions, with the maximum spacing being closest to the first opening 12 and the minimum spacing being furthest from the first opening 12. Thus, the larger spacing between the two blocking members near the first opening 12 can slightly reduce airflow resistance, helping to mitigate airflow disturbances such as vortices caused by the first opening 12. A smaller spacing is used distal to the first opening to ensure stronger airflow control capabilities. In a preferred embodiment, the spacing at other positions between the maximum and minimum spacings is smoothly and gradually transitioned to ensure a smooth transition in the flow field and avoid sudden turbulence.

[0075] In a preferred embodiment, the second blocking member 62 can also be driven to move to an operating position that at least partially exposes the first opening 12, preferably completely exposes the first opening 12. Regarding the specific arrangement of the lifting drive member 623 of the second blocking member 62 and the auxiliary gas supply port 22, the following specific embodiments are provided as examples: In a preferred embodiment, as Figure 4a As shown, the lifting drive component 623 will occupy more radial space, preferably occupying the space more peripheral to the second barrier component 62. For example, the lifting drive component 623 may include a lifting frame, a connector and other components to drive the second barrier component 62 to achieve lifting operations. This type of lifting drive component is the simplest to implement and can effectively reduce equipment cost and complexity. Accordingly, the second auxiliary gas port 222 can be set in the area on the top surface of the reaction chamber 10 near the inner side of the second barrier component 62 to supply the second auxiliary gas flow 2220 longitudinally; and because the area on the top surface of the reaction chamber 10 near the outer side of the second barrier component 62 will be affected by the lifting drive component 623, the first auxiliary gas port 221 can be set in the upper part of the side wall 11 of the reaction chamber 10 to supply the first auxiliary gas flow 2210 radially.

[0076] In another preferred embodiment, Figure 4b As shown, the lifting drive component 623 is located above the second blocking component 62, occupying only a small radial space. For example, a thinner connecting component such as a connecting rod or a connecting line can be used. At this time, the first auxiliary gas port 221 and the second auxiliary gas port 222 are both arranged on the top wall of the reaction chamber 10, distributed on both sides of the second blocking component 62, and both supply gas longitudinally, so that the airflow has better directionality and controllability.

[0077] Regarding the specific configuration of the third blocking component 63, in some preferred embodiments, different portions of the third blocking component 63 can have different shapes. For example, it is divided into a first portion close to the first opening 12 and a second portion away from the first opening 12, and in the axial X direction, the height of the first portion is lower than that of the second portion. The design aims to solve the problem of gas vortex and heat leakage caused by the first opening 12, which is basically the same as the problem faced by the first blocking component 61, which will not be described in detail here. In preferred embodiments, the third blocking component 63 and the first blocking component 61 also have different spacings at different heights, preferably the lower spacing is greater than the upper spacing, thereby providing more smooth gas export capability and avoiding pressure loss near the exhaust component 41.

[0078] In a preferred embodiment, the first blocking component 61 has a single outer diameter size, while the lower region of the third blocking component 63 has a larger outer diameter than the upper region, that is, the lower region protrudes outward in the radial R direction compared to the upper region, thereby the first blocking component 61 and the third blocking component 63 have a larger spacing at the more downstream gas flow, thereby providing more smooth gas export capability and avoiding pressure loss near the exhaust port 41, while the upper and lower quasi-static gas flow spaces are formed between the third blocking component 63 and the outer wall of the reaction cavity 10, which can further improve the stability of the lower quasi-static gas flow, thereby optimizing the overall stability of the quasi-static gas flow.

[0079] In a preferred embodiment, the third blocking component 63 has a single outer diameter size, while the lower region of the first blocking component 61 has a smaller outer diameter than the upper region, that is, the lower region is recessed inward in the radial R direction compared to the upper region, thereby the first blocking component 61 and the third blocking component 63 have a larger spacing at the more downstream gas flow, thereby providing more smooth gas export capability and avoiding pressure loss near the exhaust port 41; at the same time, the internal space surrounded by the first blocking component 61 forms an upper large and lower small configuration, which can cooperate with the positive pressure gas flow emitted from the bottom of the internal space to improve the internal positive pressure stability, which will be further described below.

[0080] In a preferred embodiment, the top of the third blocking member 63 has a height H63 from the bottom of the reaction chamber 10. This applies when the top of the third blocking member 63 has a uniform height. When different portions of the third blocking member 63 have different heights as described above, H63 refers to the height of the top of the second portion distal from the first opening 12. In summary, the top of the third blocking member 63, distal from the first opening 12, has a height H63 from the bottom of the reaction chamber 10. At least at the second portion of the third blocking member 63, the top height H63 of the third blocking member 63 is higher than the bottom height H62 of the second blocking member 62. Unless otherwise specified, all heights mentioned in this specification refer to heights measured from the bottom of the reaction chamber 10 in the axial direction X. Based on this design, the third blocking member 63 and the second blocking member 62 overlap in the axial direction X at least at their first portions. Based on this design, the third blocking member 63 is able to receive the inner portion of the first secondary gas flow 2210 earlier and more completely surround the second secondary gas flow 2220 and other mixed gases passing through the bottom of the second blocking member 62, thereby achieving better airflow control and enhancing the guiding capability and airflow suppression and positioning capabilities. At the same time, the larger third blocking member height H63 also means a larger quasi-static airflow space, which will further enhance the stability of the quasi-static airflow, thereby optimizing the stability and controllability of the entire reaction chamber space and further preventing the undesirable deposition of reaction products in non-target areas. However, it should be noted that when the height of the third blocking member 63 is further increased to above the first blocking member 61, the control effect on the reaction chamber space is not significantly improved. An excessively high third blocking member will also increase the complexity of the system and may cause adverse interference during operation. Therefore, in a preferred embodiment, the height H63 of the third blocking member 63 is higher than the bottom height of the second blocking member 62, but not higher than the height of the first blocking member 61.

[0081] Regarding the installation method of the third blocking member 63, it can be installed on the bottom wall and / or side wall of the reaction chamber. In a preferred embodiment, the third blocking member 63 is connected to the side wall 11 of the reaction chamber 10 via a connecting member. Based on this, a thermal stress compensation space can be provided at the bottom of the third blocking member 63 to avoid adverse displacement interference with the chamber bottom when thermal expansion and contraction deformation occurs, thereby enhancing the control accuracy of the device. At the same time, it can also reduce the rapid transmission of driving elements through the chamber bottom wall to the blocking member during the reaction operation of the device, enhance the anti-vibration and anti-deformation capabilities of the blocking member, and thus extend the overall service life of the blocking member and the device.

[0082] The specific structure and control method of the first and second auxiliary gas supply ports 221, 222 are described as follows. The first auxiliary gas supply port 221 has a distribution width D221 in the radial direction R, and the second auxiliary gas supply port 222 has a distribution width D222 in the radial direction R. Here, since the lower outer side of the second auxiliary gas supply port 222 is the second blocking member 62, and there is no mechanical obstruction on the lower inner side, the distribution width D222 is defined as the distance between the innermost edge of the gas outlet opening of the second auxiliary gas supply port 222 and the inner wall of the second blocking member 62 in the radial direction R. After the first auxiliary gas supply port 221 supplies gas to the reaction chamber 10, the gas is limited by the inner wall of the sidewall 11 of the reaction chamber 10 and the outer wall of the second blocking member 62 on both sides. Therefore, D221 is directly defined as the distance between the inner wall of the sidewall 11 of the reaction chamber 10 and the outer wall of the second blocking member 62 in the radial direction R. In a preferred embodiment, D222>D221, so that in a limited space, the second auxiliary gas flow 2220 close to the reaction gas has a larger distribution width, thereby utilizing a more sufficient gas supply to control the reaction gas and make the reaction gas more focused on the area where the substrate material to be deposited is located.

[0083] In a preferred embodiment, the first auxiliary gas supply port 221 and the second auxiliary gas supply port 222 each have independent supply pipelines and control components. During the reaction, the device 1 of the present invention can have the following control method: the airflow supply flow rate of the first auxiliary gas supply port 221 is set to V1, and the airflow supply flow rate of the second auxiliary gas supply port 222 is set to V2, and V2>V1 should be satisfied, so as to form a stronger gas control capability in the area near the reaction gas, while avoiding unnecessary disturbances in the relatively narrow space outside.

[0084] In a preferred embodiment, the second auxiliary gas supply port 222 is further divided into multiple groups of gas supply sub-areas in the radial direction. During the reaction process, the closer the gas supply sub-area is to the periphery in the radial R direction, the lower the gas flow rate is. In a preferred embodiment, multiple groups of gas supply sub-areas respectively have independent gas supply sub-pipelines and control units, and the flow rate is controlled by human regulation. In another preferred embodiment, multiple groups of gas supply sub-areas share a set of gas supply pipelines and control units, and the inner gas supply sub-area has a smaller gas supply aperture than the outer one, thereby realizing a gas supply method in which the gas supply airflow intensity is from high to low from the inside to the outside. Based on this, the second auxiliary gas supply port 222 can provide a controlled airflow with an intensity gradient, which is high inside and low outside. The internal high-intensity airflow can well position and control the reaction gas, and the external airflow intensity gradually decreases, which helps to stabilize the airflow environment inside the entire reaction chamber and effectively avoid adverse airflow disturbances at the second blocking component 62 due to the high airflow intensity.

[0085] In a preferred embodiment, Figure 5 As shown, the support system 30 includes a support member 31 and a rotary drive member 32 for rotationally driving the support member 31. A positive pressure gas outlet 33 is provided on the side wall of the rotary drive member 32, which can continuously supply gas as needed to the space enclosed by the support member 31 and the first barrier member 61 to ensure that at least a portion of the space has a positive pressure. In a preferred embodiment, the rotary drive member 32 is a rotating shaft, and the positive pressure gas outlet 33 is located on the side wall of the rotating shaft near the bottom wall of the reaction chamber. This maintains a positive pressure in at least the bottom area of ​​the space enclosed by the support member 31 and the first barrier member 61, effectively preventing excess external gas and reaction products from entering the bottom space and contaminating or damaging the moving components of the rotary drive member 32.

[0086] In a preferred embodiment, the height of the positive pressure outlet 33 from the bottom of the reaction chamber 10 is H33, and the portion of the first barrier component 61 below the height of H33 has a smaller diameter and forms an inward boss at the height of H33. Based on this, on the one hand, space contraction can be formed in the area below the internal space H33, and a smaller airflow can be used to achieve positive pressure protection to avoid unnecessary disturbance to the external chamber space; on the other hand, the area below the height of H33 between the third barrier component 63 and the first barrier component 61 can have a larger interval, which is conducive to the discharge of gas and avoids pressure loss; in addition, the step formed by the first barrier component 61 at the height of H33 is conducive to collecting solid particles that accidentally enter the enclosed space, which is convenient for centralized cleaning and maintenance in the later stage.

[0087] In some preferred embodiments, the air supply pipe of the positive pressure air outlet 33 is surrounded by at least two groups of upper and lower shells, and is centrally symmetrical around the rotation axis. Its pipeline space forms an inverted U shape in the cross-sectional view in the manner of first upward, then outward, and finally downward, and the pipeline space gradually narrows. Based on this, when the external positive pressure airflow is supplied from the positive pressure air outlet 33, an acceleration is formed in the pipeline space, which can form a greater positive pressure intensity with a smaller airflow, avoiding adverse disturbances caused by the supply of a larger airflow; at the same time, the inverted U-shaped air supply pipeline forms a maze direction, and the end opening is downward, which can effectively protect the adjacent driving components inside the pipeline. Even when there is no ventilation, it is difficult for excess gas and solid particles to flow back into the pipeline.

[0088] Regarding the material selection of the multi-stage barrier components in the present invention, since the reaction chamber has high temperature characteristics during the reaction process, the gases and reaction products introduced may be corrosive, and the gas conduction requirements are relatively high. The inventors have found that molybdenum material is the most compatible with the technical solution of the present invention. It has high-temperature stability and can work stably for a long time at the typical process temperature of metal organic compound chemical vapor deposition. It has moderate thermal conductivity, which can effectively conduct heat to avoid local overheating and will not dissipate excessive heat. It also has a low thermal expansion coefficient and high corrosion resistance. Its excellent surface chemical inertness has almost no catalytic activity for common precursors (such as TMGa, NH3, TMAl, etc.), and can effectively reduce surface parasitic reactions. In a preferred embodiment, the three-stage barrier components of the present invention all contain molybdenum material. In a preferred embodiment, the three-stage barrier components of the present invention are all made of pure molybdenum.

[0089] In a preferred embodiment, the first barrier component 61 is made of pure molybdenum, or its molybdenum content should be greater than 98% (by mass fraction) to better cope with the high temperature environment generated by the heating component 51 and fully utilize its thermal insulation properties to reduce peripheral heat escape. At the same time, the first barrier component is exposed to excess reaction gases or related products after the reaction, and also requires high-purity molybdenum to provide optimal corrosion and deposition resistance. The second barrier component 62 is slightly farther away from the heating component 51 and is responsible for guiding gases that have just entered the reaction chamber and have not yet fully reacted. Therefore, its molybdenum content can be lower than that of the first barrier component 61, preferably 90%-95%. The remaining components are preferably lanthanum oxide La2O3, or directly use TZM alloy to provide better resistance to airflow impact. The third blocking component 63 is farthest from the heating component 51, and the impact of the airflow is relatively soft. Its molybdenum content can be lower than that of the second blocking component 62, preferably 70%-85%. However, it is necessary to consider that the peripheral area has a large vibration amplitude. Therefore, the remaining components are preferably zirconium carbide ZrC to enhance mechanical strength, improve anti-vibration and anti-deformation capabilities, and increase performance and service life.

[0090] The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited thereto. Within the technical concept of the present invention, various simple variations of the technical solution of the present invention may be made, including combining the various technical features in any other appropriate manner. These simple variations and combinations should also be regarded as disclosed in the present invention and fall within the scope of protection of the present invention.

Claims

1. A metal organic compound chemical vapor deposition device, comprising a reaction chamber, a gas supply system, a carrying system, an exhaust system and a heating system, wherein: The reaction chamber has an axial direction and a radial direction, and is characterized in that: The device further comprises a barrier system, the barrier system comprising a first barrier member extending generally from bottom to top in the axial direction, the first barrier member surrounding at least a portion of the carrying system and the heating system; the barrier system further comprising a second barrier member extending generally from top to bottom in the axial direction, the second barrier member surrounding at least a portion of the first barrier member; the barrier system further comprising a third barrier member extending generally from bottom to top in the axial direction, the third barrier member surrounding at least a portion of the first barrier member, and a top end of the third barrier member being disposed further outward than a bottom end of the second barrier member in a radial direction, forming a gap between the third barrier member and the inner wall of the reaction chamber; The gas supply system includes a main gas supply port and a secondary gas supply port, the main gas supply port supplies at least reaction gas, and the secondary gas supply port supplies at least control gas; wherein, the secondary gas supply port includes a first secondary gas supply port and a second secondary gas supply port, the top end of the second blocking component is arranged between the first secondary gas supply port and the second secondary gas supply port, and the first secondary gas supply port is radially further outward than the second secondary gas supply port.

2. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The carrying system includes a supporting component, the heating system includes a heating component, and the top end of the first blocking component is higher than the top end of the heating component but does not exceed the top end of the supporting component.

3. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The inner wall of the reaction chamber has a first opening, and the top of the first blocking member and / or the third blocking member has a lower height at a portion adjacent to the first opening.

4. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The inner wall of the reaction chamber has a first opening, the top of the first blocking member has a height H61 and an outer diameter R61 at a portion away from the first opening, and the top surface of the supporting member included in the carrying system has a height H31 and an outer diameter R31, satisfying: R61≤R31, and H61<H31; or, R61>R31, H61≤H31, and (H31-H61) / (R61-R31)=2~1.

5. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: An overlapping component is provided on the outer wall of the first blocking component, and the height of the overlapping component is 15%-25% of the maximum height of the first blocking component.

6. The metal organic chemical vapor deposition apparatus according to claim 5, wherein: The exhaust system includes an exhaust component disposed between the first blocking component and the third blocking component, and the overlapping component is overlapped on a top wall of the exhaust component and installed in place.

7. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The bearing system includes a supporting component; in a radial direction, the distance between the second blocking component and the first blocking component is 10%-15% of the diameter of the supporting component.

8. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The inner wall of the reaction chamber has a first opening. In a radial direction, a distance between the second blocking component and the first blocking component adjacent to the first opening is greater than a distance between the second blocking component and the first blocking component away from the first opening.

9. The metal organic chemical vapor deposition apparatus according to claim 8, wherein: The second blocking component and the first blocking component have a maximum distance at a position closest to the first opening and a minimum distance at a position farthest from the first opening, and the distance between the second blocking component and the first blocking component at other positions smoothly transitions between the maximum distance and the minimum distance.

10. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The inner wall of the reaction chamber has a first opening, and the second blocking component is movable between a first position at least partially blocking the first opening and a second position at least partially exposing the first opening.

11. The metal organic chemical vapor deposition apparatus according to claim 10, wherein: The second blocking component has a lifting driving component arranged adjacent to it in the axial direction, and the first secondary gas port is arranged at the top of the reaction chamber; Alternatively, the second blocking component has a lifting driving component arranged adjacent to the second blocking component in a radial direction, and the first secondary gas port is arranged at a side of the reaction chamber.

12. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The exhaust system includes an exhaust component disposed between the first blocking component and the third blocking component. The first blocking component and the third blocking component have a larger distance therebetween at positions adjacent to the exhaust component.

13. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The top end height of the third blocking component is higher than the bottom end height of the second blocking component, but is lower than the top end height of the first blocking component.

14. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The third blocking component is detachably connected to the side wall of the reaction chamber.

15. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: In the radial direction, the distribution width of the first secondary gas supply ports is smaller than that of the second secondary gas supply ports.

16. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The gas supply flow rate of the first sub-gas supply port is lower than that of the second sub-gas supply port.

17. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The second secondary gas supply port has a plurality of gas supply sub-areas in the radial direction, each gas supply sub-area can independently control the gas supply flow rate, and during the reaction process, the gas supply flow rate of the inner gas supply sub-area is greater than that of the outer gas supply sub-area; Alternatively, the second auxiliary gas supply port has a plurality of gas supply sub-regions in the radial direction, and the gas supply opening size of each gas supply sub-region gradually increases from the inside to the outside.

18. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The innermost edge of the gas opening of the second secondary gas port is aligned with the outer edge of the support component of the carrying system in the radial direction, or is arranged further outward than the outer edge of the support component.

19. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The carrying system comprises a rotation driving component, and an outer wall of the rotation driving component is provided with an air outlet.

20. The metal organic chemical vapor deposition apparatus according to claim 19, wherein: The gas outlet is arranged at a certain height adjacent to the bottom wall of the reaction chamber, and the first blocking component has a smaller diameter at a portion below the height of the gas outlet.

21. The metal organic chemical vapor deposition apparatus according to claim 19, wherein: The air supply pipe of the air outlet is surrounded by at least two shells, and the air supply pipe has an inverted U-shaped cross-section.

22. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The first blocking component, the second blocking component and the third blocking component are all made of pure molybdenum.

23. The metal organic chemical vapor deposition apparatus according to claim 1, wherein: The first barrier component, the second barrier component and the third barrier component all contain molybdenum material, and the content of the molybdenum material decreases in sequence.

24. The metal organic chemical vapor deposition apparatus according to claim 23, wherein: The first barrier component is made of pure molybdenum or has a molybdenum content greater than 98%, the second barrier component has a molybdenum content of 90%-95%, and the third barrier component has a molybdenum content of 70%-85%.

25. The metal organic chemical vapor deposition apparatus according to claim 23, wherein: The second barrier component is made of TZM alloy or contains lanthanum oxide, and the third barrier component contains zirconium carbide.

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