Diamond wafer hardness testing method and device

Abstract

The invention discloses a diamond wafer hardness testing method and device, and relates to the technical field of diamond test.The diamond wafer hardness testing method comprises the following specific steps that a diamond wafer is fixed to a base, and an impact medium material is adopted to conduct jet impact on the fixed diamond wafer; the diamond wafer is subjected to jet impact by adopting the impact medium material, so that the mass loss, the surface impact pit depth and the displacement length after impact of the diamond wafer can be obtained, and the hardness of the diamond wafer can be quantitatively tested and evaluated by adopting the hardness testing method of the diamond wafer; moreover, the testing method is not a destructive testing method, the subsequent processing and use of the diamond wafer are not influenced, the hardness testing cost is reduced, and the hardness testing method of the diamond wafer can test and evaluate the hardness of the diamond wafer at low cost; the technical problem that an existing diamond wafer hardness testing method cannot quantitatively test and evaluate the hardness of the diamond wafer at low cost is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of diamond testing, and in particular to a method and device for testing the hardness of a diamond wafer. Background Art

[0002] A material's hardness refers to its ability to resist local deformation, particularly plastic deformation, indentation, or scratches. It reflects the strength of the interatomic bonding within the material and is a key indicator of its mechanical properties. Hardness is often closely correlated with other properties, such as its strength and wear resistance. Generally speaking, materials with higher hardness also exhibit higher strength and better wear resistance, but may also exhibit lower toughness. In engineering applications, selecting materials with the appropriate hardness based on specific requirements is crucial.

[0003] There are many methods for testing material hardness, and different methods are suitable for different types of materials and different application scenarios. For brittle superhard materials, which are prone to breakage and plastic deformation, the hardness value is usually determined by measuring the size or depth of the indentation on the material. Common test methods include Brinell hardness, Rockwell hardness, and Vickers hardness. Different hardness test methods use different indenters and loads, as follows: (1) Rockwell hardness test method: The hardness value is determined by measuring the depth of the indenter into the surface of the material under specified load and time.

[0004] (2) Vickers hardness test method: Use a certain load to press a diamond square pyramid indenter with a vertex angle of 136° into the surface of the material to be tested. After maintaining the load for a specified time, remove the load and measure the diagonal length of the indentation. Based on this, the surface area of ​​the indentation is calculated and the hardness value is obtained.

[0005] (3) Knoop hardness test method: Use a diamond rhombus indenter to press the indenter into the surface of the material under test under specified load and time, measure the diagonal length of the indentation, and calculate the hardness value.

[0006] (4) Mohs hardness test method: A diamond indenter forms an indentation under load, and the length of the long diagonal line is measured to calculate the hardness value.

[0007] (5) Microhardness test method: Similar to the Vickers hardness test method, but the load used is smaller, usually between 1gf and 1kgf, and the indenter is also a diamond regular square pyramid.

[0008] Diamond is a typically brittle material with an extremely high hardness. When testing the hardness of a material, it is often used as an indenter to test the hardness of other materials, while there are relatively few methods for testing the hardness of diamond itself. Currently, the Mohs hardness scale and microhardness are commonly used to characterize the hardness of diamond.

[0009] The Mohs hardness test measures a material's hardness by comparing its ability to resist scratching. A standard Mohs hardness tester consists of a diamond cone at one end and a mineral standard of varying hardness at the other. The standard mineral is used to scratch the surface of the material, and the depth and width of the scratch determine the material's Mohs hardness. This method is simple, intuitive, and widely applicable, but it is a qualitative test that cannot provide a specific hardness value. It can be difficult to distinguish between materials of similar hardness, and test results can be influenced by the operator's subjective factors.

[0010] For the microhardness test method, since the indenter is a regular tetrahedral diamond indenter, the hardness is tested by pressing the diamond indenter into a diamond wafer. Since both the indenter and the sample are made of brittle materials with extremely high hardness, even a slight deformation can easily cause one or both sides to break, resulting in test failure and damage to the indenter or sample. The test cost is high and is easily affected by the surface condition of the sample (surface roughness, flatness, etc.), resulting in a low success rate.

[0011] Currently, the superhard materials industry lacks a standardized test method and evaluation method for diamond wafer hardness, making it difficult to effectively characterize the mechanical properties of diamond wafer materials and, to a certain extent, limiting the widespread application of diamond materials. Therefore, faced with the extremely hard, brittle, and easily fractured diamond material, how to cost-effectively quantify and evaluate its hardness is a key common challenge facing the superhard materials industry. Summary of the Invention

[0012] In view of the deficiencies in the above-mentioned background technology, the present invention proposes a diamond wafer hardness testing method and device, which solves the technical problem that the existing diamond wafer hardness testing method cannot quantitatively test and evaluate its hardness at low cost.

[0013] The technical scheme of the present application is implemented as follows: a diamond wafer hardness testing method, and the specific steps are as follows: step one: fixing the diamond wafer on a seat body, and spraying and impacting the fixed diamond wafer with an impact medium material; step two: observing the surface state of the diamond wafer before and after being impacted and measuring the impact pit depth; step three: measuring the mass of the diamond wafer before and after being impacted, and calculating the mass loss; and step four: measuring the displacement of the diamond wafer before and after being impacted. The present application sprays and impacts the diamond wafer with the impact medium material, and the mass loss, surface impact pit depth, and displacement length of the diamond wafer after being impacted can be obtained, so as to quantify the hardness of the diamond, and then accurate hardness measurement results can be provided, so that the hardness testing method of the diamond wafer can quantitatively test and evaluate the hardness, and the testing method of the present application is a non-destructive testing method, does not affect the subsequent processing and use of the diamond wafer, reduces the cost of hardness testing, so that the hardness testing method of the diamond wafer can test and evaluate the hardness at low cost, and the technical problem that the existing hardness testing method of the diamond wafer cannot quantitatively test and evaluate the hardness at low cost is solved.

[0014] Preferably, in step one, the diamond wafer can be tested at different positions, and the overall hardness of the diamond wafer can be evaluated by testing multiple positions. By changing the rotation angle of the diamond wafer, different positions are tested, and the overall hardness of the diamond wafer is evaluated by testing multiple positions, effectively ensuring the accuracy of the hardness test results of the diamond wafer. The diamond wafer is fixed on the seat body, the spray head is started, and impact is performed according to the set parameters. After rotating the diamond wafer, three repeated tests are performed, and the repeatability of the results is verified.

[0015] Preferably, in step one, the impact medium is diamond powder. The impact medium uses a diamond powder standard sample, the particle size of the diamond powder is in the range of 40-45 μm, and the spraying pressure of the diamond powder is in the range of 0.1-0.2 MPa. The use of diamond powder as the impact medium improves the service life and the testing efficiency.

[0016] Preferably, in step one, the seat body is made of ceramic material; and the impact medium is obliquely sprayed onto the diamond wafer. The seat body is made of ceramic material, which has high hardness, good wear resistance, and high heat resistance, effectively improving the accuracy of the hardness test. The ceramic material has the advantage of high hardness, which can effectively reduce the error during displacement of the diamond wafer. The spraying direction is obliquely incident into the diamond wafer. This can effectively avoid damage to the spray head caused by the rebound and falling of the sprayed diamond powder, prolonging the service life.

[0017] Preferably, in step 2, a microscope, a scanning electron microscope (SEM) or a high-speed camera is used to observe the surface state of the diamond wafer before and after the impact and measure the impact crater depth. The value obtained by using a microscope, a scanning electron microscope (SEM) or a high-speed camera to observe the surface state of the diamond wafer before and after the impact and measure the impact crater depth is more accurate. The impact crater depth is measured as follows: 5 evenly distributed points (center and four corners) are selected in the same test area, the maximum depth di of each point is recorded, and the impact crater depth d=di / 5 is calculated. The surface state of the diamond wafer before and after the impact and the impact crater depth are measured as the basis for evaluating the hardness.

[0018] Preferably, in step 3, an electronic balance is used to measure the mass of the diamond wafer before and after the impact. The electronic balance is used to measure the mass of the sample before and after the impact as m0 and m1, respectively, and the mass loss Δm = m0-m1 is calculated. The mass loss of the diamond wafer before and after the impact is used as the basis for evaluating the hardness.

[0019] Preferably, in step 4, a laser displacement sensor is used to measure the displacement of the diamond wafer before and after the impact. The laser displacement sensor is used to measure the displacement L before and after the impact, and the displacement of the diamond wafer before and after the impact is used as the basis for evaluating the hardness.

[0020] A diamond wafer hardness testing device comprises the aforementioned base, with a nozzle positioned below the base for spraying an impact medium toward the diamond wafer. The test device is designed to be vertical, with the nozzle positioned at a fixed angle at its base. The spray medium is diamond powder. The diamond wafer sample is secured below the base, and a fixed shaft is installed at the top of the test device to secure the entire device. Diamond wafer hardness is evaluated based on material loss from the diamond wafer, impact crater depth, and displacement length after impact.

[0021] Preferably, the base is arranged in a vertical direction, and the nozzle is arranged at an angle below the base; the nozzle is made of diamond. The nozzle is tilted at a fixed angle of 90° to 150° with respect to the diamond wafer, and the impact length is limited to 2mm to 8mm by a mask, that is, the mask limits the impact range to an area of ​​2mm to 8mm by 2mm to 8mm. The preferred tilt angle between the nozzle and the diamond wafer is 135°, and the mask limits the impact range to an area of ​​5mm by 5mm. This is because during the hardness test of diamond wafers, it was found that the hardness test results were more stable when the nozzle 7 was tilted at 135° with respect to the diamond wafer.

[0022] Preferably, the base includes a base, the bottom of the base is provided with a guide shaft and a fixed sleeve, the fixed sleeve is provided with a coil that can heat the diamond wafer, the top surface of the guide shaft is connected to the base, the fixed sleeve is coaxially arranged with the guide shaft, the bottom surface of the guide shaft is connected to the fixed sleeve, the bottom surface of the fixed sleeve is connected to a ceramic base, the bottom surface of the ceramic base is connected to a ceramic suction cup for adsorbing diamond wafers, and the nozzle is arranged obliquely below the ceramic suction cup. The ceramic base and ceramic suction cup combination of the present application forms a negative pressure to fix the diamond wafer. The present application heats the diamond wafer by the repulsive force generated by the coil and the heat supplied after the coil is energized, and the hardness of the diamond wafer at different temperatures can be detected by the coil heat.

[0023] Among them, the coil includes two sets of upper and lower coils arranged in the vertical direction. The repulsive force generated between the two sets of coils plays a buffering role when the diamond wafer is impacted by the impact medium. At the same time, it can record the displacement length of the diamond wafer after being impacted by diamond micropowder.

[0024] The beneficial effects of the present invention are as follows: the present application adopts an impact medium material to perform jet impact on a diamond wafer, and can obtain the mass loss of the diamond wafer, the depth of the surface impact pit, and the displacement length after the impact, thereby quantifying the hardness of the diamond, and then being able to provide accurate hardness measurement results, thereby enabling the hardness testing method of the diamond wafer to quantitatively test and evaluate its hardness, and the testing method of the present application is not a destructive testing method, does not affect the subsequent processing and use of the diamond wafer, reduces the cost of the hardness test, and thereby enables the hardness testing method of the diamond wafer to test and evaluate its hardness at a low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 It is a perspective view of the present invention.

[0027] Figure 2 The first angle explosion of the present invention Figure 1 .

[0028] Figure 3 The second angle explosion of the present invention Figure 2 .

[0029] In the figure: 1- base; 2- guide shaft; 3- fixed sleeve; 4- ceramic base; 5- ceramic suction cup; 6- diamond wafer; 7- nozzle; 8- coil. DETAILED DESCRIPTION

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without creative work are within the scope of protection of the present invention.

[0031] Example 1, a method for testing the hardness of a diamond wafer, such as Figure 1 As shown, the specific steps are as follows: Step 1: Fix the diamond wafer 6 on the base, and use the impact medium material to spray and impact the fixed diamond wafer 6; Step 2: Observe the surface state of the diamond wafer 6 before and after the impact and measure the depth of the impact crater; Step 3: Measure the mass of the diamond wafer 6 before and after the impact and calculate the mass loss; Step 4: Measure the displacement of the diamond wafer 6 before and after the impact. The present application uses an impact medium material to perform a jet impact on the diamond wafer 6, which can obtain the mass loss of the diamond wafer 6, the depth of the surface impact pit and the displacement length after the impact, thereby quantifying the hardness of the diamond, and then providing accurate hardness measurement results, so that the hardness testing method of the diamond wafer can quantitatively test and evaluate its hardness. In addition, the testing method of the present application is not a destructive testing method. After the hardness test of the diamond wafer 6 is performed, the diamond wafer 6 can be subsequently processed and used, which does not affect the subsequent processing and use of the diamond wafer 6, reducing the cost of the hardness test, and thus enabling the hardness testing method of the diamond wafer to test and evaluate its hardness at low cost, solving the technical problem that the existing hardness testing method of the diamond wafer cannot quantitatively test and evaluate its hardness at low cost.

[0032] Example 2, based on Example 1, a diamond wafer hardness testing method, such as Figure 1 As shown, in step 1, the diamond wafer 6 can be tested at different positions, and the overall hardness of the diamond wafer 6 can be evaluated by testing multiple positions. By changing the rotation angle of the diamond wafer, different positions can be tested, and the overall hardness of the diamond wafer 6 can be evaluated by testing multiple positions, effectively ensuring the accuracy of the hardness test results of the diamond wafer 6. The diamond wafer 6 is fixed on the base, the nozzle 7 is started, and the impact is performed according to the set parameters. After rotating the diamond wafer 6, the test is repeated three times to verify the repeatability of the results.

[0033] Example 3, based on Example 1 or 2, a diamond wafer hardness testing method, such as Figure 1As shown, in step 1, the impact medium is diamond micropowder. The impact medium uses a standard diamond micropowder sample with a particle size range of 40-45 μm and a spray pressure range of 0.1–0.2 MPa. Using diamond micropowder as the impact medium increases both service life and testing efficiency.

[0034] Example 4, based on Example 3, a diamond wafer hardness testing method, such as Figure 1 As shown, in step 1, the base is made of ceramic material; the impact medium is sprayed obliquely onto the diamond wafer 6. The ceramic base has high hardness, good wear resistance, and high heat resistance, effectively improving the accuracy of hardness testing. At the same time, the high hardness of ceramic material can effectively reduce the error during the displacement of the diamond wafer 6. The impact medium is sprayed obliquely onto the diamond wafer 6, which can effectively prevent the rebound and drop of the diamond powder after spraying and damage to the nozzle 7, thereby extending the service life of the nozzle 7.

[0035] Example 5, based on Example 4, a diamond wafer hardness testing method, such as Figure 1 As shown, in step 2, a microscope, scanning electron microscope (SEM), or high-speed camera is used to observe the surface condition of the diamond wafer 6 before and after the impact and measure the impact crater depth. Using a microscope, scanning electron microscope (SEM), or high-speed camera to observe the surface condition of the diamond wafer 6 before and after the impact and measure the impact crater depth provides a more accurate value. The impact crater depth is measured by selecting five evenly distributed points (center and four corners) within the same test area, recording the maximum depth di at each point, and calculating the impact crater depth d = di / 5. The surface condition of the diamond wafer 6 before and after the impact and the measured impact crater depth are used as the basis for evaluating the hardness.

[0036] Example 6, based on Example 5, a diamond wafer hardness testing method, such as Figure 1 As shown, in step 3, an electronic balance is used to measure the mass of the diamond wafer 6 before and after the impact. The electronic balance measures the sample mass before and after the impact as m0 and m1, respectively, and calculates the mass loss Δm = m0 - m1. The mass loss of the diamond wafer 6 before and after the impact is used as the basis for evaluating the hardness.

[0037] Example 7, based on Example 6, a diamond wafer hardness testing method, such as Figure 1 As shown, in step 4, a laser displacement sensor is used to measure the displacement of the diamond wafer 6 before and after the impact. The laser displacement sensor is used to measure the displacement L before and after the impact, and the displacement of the diamond wafer 6 before and after the impact is used as the basis for evaluating the hardness.

[0038] When Example 7 is implemented, diamond micropowder is used to perform jet impact on the diamond wafer 6, and the mass loss of the diamond wafer 6, the depth of the surface impact crater, and the displacement length after the impact can be obtained, thereby quantifying the hardness of the diamond wafer 6.

[0039] Example 8, based on any one of Examples 1 to 7, a diamond wafer hardness testing device includes the above-mentioned base, such as Figure 1 、 Figure 2 and Figure 3 As shown, a nozzle 7 is installed below the base to spray an impact medium toward the diamond wafer 6. The test apparatus is designed to be vertical, with the nozzle 7 positioned at a fixed angle at the bottom. The spray medium is diamond powder. The diamond wafer 6 sample is fixed below the base, and a fixed shaft is installed at the top of the test apparatus to secure the entire apparatus. The hardness of the diamond wafer 6 is evaluated based on the material loss of the diamond wafer 6, the depth of the impact crater, and the displacement length after the impact.

[0040] Example 9, based on Example 8, a diamond wafer hardness testing device, such as Figure 1 and Figure 2 As shown, the base is arranged vertically, and the nozzle 7 is arranged obliquely below the base; the nozzle 7 is made of diamond. The nozzle 7 is tilted at a fixed angle of 90° to 150° relative to the diamond wafer 6, and the impact length is limited to 2 mm to 8 mm by a mask, that is, the mask limits the impact range to an area of ​​2 mm to 8 mm by 2 mm to 8 mm. A preferred tilt angle between the nozzle 7 and the diamond wafer 6 is 135°, and the mask limits the impact range to an area of ​​5 mm by 5 mm. This is because during the hardness test of the diamond wafer 6, it was found that the hardness test results were more stable when the nozzle 7 was tilted at 135° relative to the diamond wafer 6. Furthermore, the 135° tilt angle can effectively prevent the diamond powder from rebounding and falling after injection and causing damage to the nozzle 7, thereby extending the service life of the nozzle 7.

[0041] Example 10, based on Example 9, a diamond wafer hardness testing device, such as Figure 1 、 Figure 2 and Figure 3As shown, the base comprises a base 1, with a guide shaft 2 and a fixing sleeve 3 positioned at its bottom. The top surface of the guide shaft 2 is connected to the base 1, and the fixing sleeve 3 is coaxial with the guide shaft 2. The bottom surface of the guide shaft 2 is connected to the fixing sleeve 3. The bottom surface of the fixing sleeve 3 is connected to a ceramic base 4, which is connected to a ceramic suction cup 5 for holding a diamond wafer 6. The showerhead 7 is arranged obliquely below the ceramic suction cup 5. The diamond wafer hardness testing device consists of three parts: the first part consists of the base 1, the guide shaft 2, and the upper and lower fixing sleeves 3. The guide shaft 2 is placed at the center of the upper portion of the fixing sleeve 3, which is then fastened to the base 1. The upper and lower parts of the fixing sleeve 3 are fixed together according to the difference in inner and outer diameters. A coil 8 is connected to each of the upper and lower fixing sleeves 3. This part primarily provides device stability and generates a magnetic field and temperature when the coil 8 is energized. The second part consists of a porous ceramic base 4 and a ceramic suction cup 5. This part is treated with negative pressure to allow the base 4 to be tightly adsorbed with the fixing sleeve 3 and the diamond wafer 6. This part mainly provides negative pressure to adsorb and fix the diamond wafer 6 sample. The third part is the nozzle 7. The nozzle 7 is arranged obliquely below the ceramic suction cup 5. The nozzle's spray angle can be adjusted as needed, with the spray angle range of 90° to 150°. Once the spray angle is selected, the spray angle remains fixed within the same test group.

[0042] The ceramic suction cup 5 of the present application forms a negative pressure to fix the diamond wafer. The working principle of the adsorption of the ceramic suction cup 5 is mainly based on negative pressure adsorption and material properties. The ceramic suction cup 5 is also called a porous ceramic suction cup, which contains many gaps. The air in the gaps on the ceramic suction cup 5 is discharged by an external vacuum pump or manual squeezing, so that a vacuum (or near vacuum) can be formed inside the ceramic suction cup 5. When the diamond wafer 6 is tightly pressed against the surface of the ceramic suction cup 5, the adsorption force generated by the pressure difference can realize the adsorption and fixation of the diamond wafer 6 on the ceramic suction cup 5.

[0043] Among them, the present application heats the diamond wafer 6 by the repulsive force generated by the coil 8 and the heat provided by the coil 8 after being energized. The heat provided by the coil 8 can realize the hardness detection of the diamond wafer 6 at different temperatures. The coil 8 includes two sets of upper and lower coils arranged in the vertical direction. The repulsive force generated between the two sets of coils plays a buffering role when the diamond wafer 6 is impacted by the impact medium, and can also record the displacement length of the diamond wafer 6 after being impacted by the diamond micropowder. The upper and lower sets of coils 8 arranged in the vertical direction are respectively arranged on the upper and lower sets of fixed sleeves 3 arranged in the vertical direction, and the upper and lower sets of coils 8 are respectively arranged at the bottom of the upper fixed sleeve 3 and the top of the lower fixed sleeve 3.

[0044] When the embodiment 10 is implemented, the seat body is sequentially installed, then the seat body is vertically arranged and fixed on the spraying table, the diamond micro powder standard sample (particle size range is 40-45 μm) is used as the impact medium material, the spraying pressure range is 0.1-0.2 MPa, the angle between the nozzle 7 and the fixed diamond wafer 6 sample is selected as 135°, the impact range is limited to a square area with a size of 5mm*5mm through a mask, then the spray head 7 is started, the diamond micro powder sprayed by the spray head 7 under the set parameters impacts the diamond wafer 6, after rotating the diamond wafer 6, three repeated tests are carried out, the verification result is repeated, then the test data collection is carried out, the test data collection includes: ① mass loss: the sample mass before and after impact is respectively m0 and m1, the mass loss amount Δm=m0-m1 is calculated; ② impact pit depth: five uniformly distributed points (center and four corners) are selected in the same test area, the maximum depth d i of each point is recorded, the impact pit depth d=d i / 5 is calculated; ③ displacement length: the displacement amount L before and after impact is measured by using a laser displacement sensor.

[0045] The above only describes the preferred embodiments of the present application and is not used to limit the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A diamond wafer hardness testing method, characterized by: The specific steps are as follows: Step 1: fix the diamond wafer (6) on the base, and use the impact medium material to spray and impact the fixed diamond wafer (6); Step 2: Observe the surface state of the diamond wafer (6) before and after impact and measure the depth of the impact crater; Step 3: measuring the mass of the diamond wafer (6) before and after the impact, and calculating the mass loss; Step 4: Measure the displacement of the diamond wafer (6) before and after the impact.

2. The diamond wafer hardness testing method according to claim 1, wherein: In step one, the diamond wafer (6) is tested at different positions, and the overall hardness of the diamond wafer (6) is evaluated by testing multiple positions.

3. The diamond wafer hardness testing method according to claim 1 or 2, characterized in that: In step 1, the impact medium is diamond powder.

4. The diamond wafer hardness testing method according to claim 3, wherein: In step one, the seat is made of a ceramic material; and the impact medium is sprayed obliquely onto the diamond wafer (6).

5. The diamond wafer hardness testing method according to claim 4, wherein: In step 2, a microscope, a scanning electron microscope (SEM) or a high-speed camera is used to observe the surface state of the diamond wafer (6) before and after the impact and to measure the depth of the impact crater.

6. The diamond wafer hardness testing method according to claim 5, wherein: In step three, an electronic balance is used to measure the mass of the diamond wafer (6) before and after being impacted.

7. The diamond wafer hardness testing method according to claim 6, wherein: In step 4, a laser displacement sensor is used to measure the displacement of the diamond wafer (6) before and after the impact.

8. A diamond wafer hardness testing device, comprising the base according to any one of claims 1 to 7, characterized in that: A nozzle (7) for spraying impact medium toward the diamond wafer (6) is provided below the base.

9. The diamond wafer hardness testing device according to claim 8, characterized in that: The seat body is arranged in a vertical direction, and the nozzle (7) is arranged obliquely below the seat body; the nozzle (7) is made of diamond material.

10. The diamond wafer hardness testing device according to claim 9, characterized in that: The base body comprises a base (1), the bottom of the base (1) is provided with a guide shaft (2) and a fixed sleeve (3), the fixed sleeve (3) is provided with a coil (8) capable of heating the diamond wafer (6), the top surface of the guide shaft (2) is connected to the base (1), the fixed sleeve (3) and the guide shaft (2) are coaxially arranged, the bottom surface of the guide shaft (2) is connected to the fixed sleeve (3), the bottom surface of the fixed sleeve (3) is connected to a ceramic base (4), the bottom surface of the ceramic base (4) is connected to a ceramic suction cup (5) for adsorbing the diamond wafer (6), and the nozzle (7) is arranged obliquely below the ceramic suction cup (5).

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