Chip substrate performance detection device and method thereof

Abstract

The application provides a chip substrate performance detection device and method, and belongs to the technical field of chip detection. The device comprises a detection shell, a partition plate, a detection isolation cover, a heating isolation cover, an impedance tester, an AC / DC electrical parameter tester, a control module, and a display terminal. The partition plate is arranged in the detection shell to form a placement cavity and an equipment cavity. The top of the partition plate is provided with the detection isolation cover to form a detection cavity. The bottom of the partition plate is provided with the heating isolation cover to form a heating cavity. The impedance tester is electrically connected with four groups of test chip probes installed on a chip clamp to obtain an impedance spectrum sequence. The AC / DC electrical parameter tester is electrically connected with a probe matrix arranged on the top of the detection isolation cover to obtain a pad electrical performance matrix sequence. A plurality of displacement sensors are arranged on the probe matrix to obtain vertical displacement feedback data. The control module is used to obtain a substrate performance comprehensive evaluation report and transmit the report to the display terminal. The chip substrate does not need to be transferred between different devices. The performance detection can be realized by synchronously simulating a high-temperature and corrosion compound environment, and the interference of environmental changes or mechanical contact on the detection data in the transfer process can be avoided.

Description

Technical Field

[0001] This invention belongs to the field of chip testing technology, and more specifically, relates to a chip substrate performance testing device and method. Background Technology

[0002] Chip substrates are a core component of electronic devices, undertaking key functions such as supporting chips, connecting circuits, and conducting signals. With the rapid development of electronic technology, chip integration is constantly increasing and operating frequency is continuously rising. Chip substrates need to maintain stable performance under complex working conditions such as high temperature, humidity, vibration, and corrosive environments. Therefore, it is necessary to conduct thermal stability and corrosion resistance tests on them.

[0003] Existing chip substrate performance testing devices are mostly single-function devices. Their thermal stability and corrosion resistance need to be tested separately. They cannot achieve dynamic coupling between heating and corrosion environments. They can only simulate single environmental stresses step by step. The substrate needs to be transferred multiple times during the testing process, which not only increases the number of operation steps, but may also cause the test data to be distorted due to environmental changes or mechanical contact during the transfer process. Furthermore, it is difficult to track the dynamic changes in the substrate performance as the testing process progresses. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a chip substrate performance testing device and method, which solves the technical problems in the prior art where traditional chip substrate performance testing devices mostly perform a single function, require multiple substrate transfers during the testing process, may cause data distortion due to environmental changes or mechanical contact during the transfer process, and are difficult to track the dynamic changes in substrate performance as the testing process progresses.

[0005] The purpose and effectiveness of the chip substrate performance testing device and method of the present invention are achieved by the following specific technical means:

[0006] A chip substrate performance testing device, comprising:

[0007] The detection housing has a partition plate forming a placement cavity and an equipment cavity. The top of the partition plate is equipped with a detection isolation cover that forms the detection cavity, and the bottom of the partition plate is equipped with a heating isolation cover that forms the heating cavity. The detection cavity and the heating cavity are connected.

[0008] Chip clamp, the chip clamp is installed in the detection cavity and is used to fix the chip substrate to be tested;

[0009] The impedance tester is electrically connected to four sets of test chip probes mounted on the chip fixture. The four sets of test chip probes are connected to electrodes on the chip substrate. The impedance tester is used to obtain the impedance spectrum sequence.

[0010] The AC / DC electrical parameter tester is electrically connected to the probe matrix installed on the top of the detection isolation cover. The bottom end of the probe matrix contacts the pads on the chip substrate. The AC / DC electrical parameter tester is used to acquire the electrical performance matrix sequence of the pads. The probe matrix is ​​equipped with multiple sets of displacement sensors for acquiring vertical displacement feedback data. The detection ends of the multiple sets of displacement sensors are respectively facing the multiple sets of detection probes in the probe matrix.

[0011] The control module is installed on one side of the detection housing and is used to obtain a comprehensive evaluation report of the substrate performance and transmit it to the display terminal.

[0012] According to a preferred embodiment, the chip fixture includes a fixture mounting block mounted on the top of a partition plate, the detection isolation cover includes a detection partition plate, the fixture mounting block is provided with a detection partition plate around its periphery, a detection housing is provided on one side of the detection partition plate, and a pull housing for opening and closing the detection isolation cover is provided on the side of the detection housing away from the detection partition plate. A detection cavity is formed between the detection partition plate, the detection housing, and the pull housing. The bottom of the heating isolation cover is provided with a lifting frame for moving four sets of bearing closed columns to the bearing position in the detection cavity or the ventilation position in the heating cavity. Four sets of vent holes are provided on the partition plate, and four sets of through holes are provided at the bottom of the heating isolation cover. A first sealing sleeve is provided in each of the four sets of vent holes and through holes.

[0013] When the lifting frame is in the bearing position, the tops of the four sets of bearing closed columns pass through the four sets of through holes and vent holes respectively and contact the bottom of the chip substrate. The detection chamber and the heating chamber are not connected.

[0014] When the lifting frame is in the ventilation position, the four sets of load-bearing closed columns are respectively installed in the four sets of through holes, and the detection chamber and the heating chamber are connected through the four sets of air outlet holes.

[0015] According to a preferred embodiment, sliding blocks are provided on both sides of the pull housing, and sliding grooves are provided on both sets of sliding blocks. Limiting posts on both sides of the detection housing are respectively inserted into the two sets of sliding grooves. Limiting strips are also provided on both sides of the detection housing, and the two sets of limiting strips are slidably connected to the top of the two sets of sliding blocks respectively.

[0016] Two sets of through slots are provided on the partition plate. A rotating seat is provided on one side of each set of through slots. A linkage gear is provided on the rotating seat. A drive rack is provided at the bottom of the sliding block. The two sides of the lifting frame are connected to the two sets of lifting racks through two sets of connecting frames respectively. One side of the linkage gear meshes with the lifting rack, and the top meshes with the drive rack.

[0017] When the housing is pulled to the open position to open the detection isolation cover, the lifting frame moves to the bearing position;

[0018] When the housing is pulled to the closed position to close the detection isolation cover, the lifting frame moves to the ventilation position.

[0019] According to a preferred embodiment, the equipment cavity is provided with an ultrasonic humidifier for outputting corrosive gas, a connector communicating with the heating cavity is provided on one side of the heating isolation cover, the outlet of the ultrasonic humidifier is connected to the connector through a pipeline, a heating module for heating the corrosive gas in the heating cavity is provided around the heating isolation cover, a gas sensor for detecting the concentration of corrosive gas is provided in the detection cavity, and a temperature sensor is also provided in the detection cavity.

[0020] The detection chamber is equipped with a pressure sensor. The top of the partition plate has two sets of reflux holes corresponding to the detection chamber. Each set of reflux holes has a horn-shaped gas gathering hood at the top and a filter screen inside. Each set of reflux holes has an electromagnetic regulating valve at the bottom. The two sets of electromagnetic regulating valves are connected to one end of the reflux pipe through a three-way pipe. The ultrasonic humidifier has a reflux check valve at the reflux end. The other end of the reflux pipe is connected to the reflux check valve. A diaphragm vacuum pump is installed on the reflux pipe, and a heat insulation layer is installed around the reflux pipe.

[0021] According to a preferred embodiment, the fixture mounting block has two sets of sliding channels on one side, and two sets of symmetrical sliding racks are provided in the two sets of sliding channels. A limiting plate is also provided on one side of the fixture mounting block corresponding to the two sets of sliding channels. A clamping block for clamping the chip substrate is provided on one side of the two sets of sliding racks. A transmission hole is provided between the two sets of sliding channels. A clamping gear is provided at one end of the transmission hole. The top and bottom of the clamping gear mesh with the two sets of sliding racks respectively. One end of the transmission shaft is connected to the clamping gear, and the other end is connected to the output shaft of the clamping servo motor. A second sealing sleeve is provided at the other end of the transmission hole. The second sealing sleeve is fitted around the transmission shaft. A mounting bracket is provided on the side of the fixture mounting block away from the detection cavity. The clamping servo motor is mounted on one side of the mounting bracket. Two sets of bearings are provided on the mounting bracket, and the transmission shaft passes through the two sets of bearings.

[0022] According to a preferred embodiment, each of the two sets of clamping blocks has two sets of sliding holes. One end of each of the four sets of test chip probes passes through one of the four sets of sliding holes. A protective shell is provided at one end of the sliding hole, and the other end of the test chip probe passes through the protective shell. Both sides of the detection shell are provided with take-up reels, and anti-corrosion connecting wires are wound on the take-up reels. One end of the anti-corrosion connecting wire passes through a through hole on one side of the protective shell and connects to the test chip probe. A connecting socket is provided on one side of the take-up reel, and the anti-corrosion connecting wire is electrically connected to the connecting socket. A third sealing sleeve is provided in the through hole. A first spring is provided in the protective shell, and one end of the first spring contacts the test chip probe. The winding force of the take-up reel is greater than the minimum elastic force of the first spring. An impedance tester is provided in the placement cavity, and the impedance tester is connected to the two sets of connecting sockets through wires.

[0023] According to a preferred embodiment, the probe matrix includes multiple sets of probes, and multiple sets of mounting cylinders are provided inside the detection isolation cover. The bottom ends of the multiple sets of detection probes are respectively inserted into the multiple sets of mounting cylinders. A mounting bracket is installed on the top of the detection isolation cover. Multiple sets of grooves are opened at the bottom of the mounting bracket corresponding to the multiple sets of detection probes. Multiple sets of second springs are respectively provided between the multiple sets of grooves and the multiple sets of detection probes. The multiple sets of second springs respectively contact the top ends of the multiple sets of detection probes.

[0024] The top of the mounting bracket has multiple sets of mounting holes, each containing a displacement sensor. Each set of detection probes has a sensing protrusion on one side, with the displacement sensors facing the protrusions. The top of the mounting bracket has a data connector, with pinhole sockets on both sides. The displacement sensors and probe matrix are connected to the two sets of pinhole sockets via wires and two sets of pinhole plugs. The data connector is electrically connected to an AC / DC power parameter tester installed in the placement cavity.

[0025] A method for testing the performance of a chip substrate, using the aforementioned chip substrate performance testing device, includes:

[0026] Impedance spectrum sequence is obtained based on test chip probe, pad electrical performance matrix sequence is obtained based on AC / DC electrical parameter tester, and topography point cloud sequence is obtained based on displacement sensor.

[0027] The environmental chamber is dynamically controlled based on a preset corrosive gas concentration and temperature curve to obtain logs of environmental parameters.

[0028] Degradation feature vector set is obtained based on impedance spectrum sequence, pad electrical performance matrix sequence, topographic point cloud sequence and detection environment parameter log. A comprehensive evaluation report of substrate performance is obtained based on the degradation feature vector set and transmitted to the display terminal.

[0029] According to a preferred embodiment, the method involves acquiring an impedance spectrum sequence based on a test chip probe, acquiring a pad electrical performance matrix sequence based on an AC / DC electrical parameter tester, and acquiring a topographic point cloud sequence based on a displacement sensor, including:

[0030] The impedance tester injects AC test signals into the electrodes at both ends of the chip substrate through two sets of test chip probes, and simultaneously measures the phase difference and amplitude response of voltage and current to obtain the impedance spectrum sequence.

[0031] Each probe in the probe matrix corresponds to a pad on the substrate. The AC / DC power parameter tester sends a row selection signal to the probe matrix to select all probes in the first row of the probe matrix. The probes in the current row are activated sequentially according to the column order to apply micro-current to the pads on the chip substrate. The conduction resistance between the pads and the leakage current to ground are measured. After the first row scan is completed, the system jumps to the second row to repeat the column scan until all rows are scanned to obtain the pad electrical performance matrix sequence.

[0032] The Z-axis displacement of each probe in the probe matrix is ​​obtained in real time based on the displacement sensor. A substrate mesh is generated based on the top surface of the chip substrate. Multiple substrate mesh nodes are obtained by mapping the X and Y coordinates of each probe to the substrate mesh. A height value is assigned to each substrate mesh node based on the initial Z-axis coordinate and Z-axis displacement value of the probe. Each substrate mesh node is stored as a topographic point cloud sequence in (X,Y,Z) format.

[0033] According to a preferred embodiment, a degradation feature vector set is obtained based on an impedance spectrum sequence, a pad electrical performance matrix sequence, a topographic point cloud sequence, and a detection environment parameter log. A comprehensive evaluation report of the substrate performance is then obtained based on the degradation feature vector set and transmitted to a display terminal, including:

[0034] The amplitude attenuation rate of characteristic frequency points was extracted from the impedance spectrum sequence as a material degradation index; the weld failure ratio and average resistance change rate were extracted from the electrical performance matrix sequence as electrical degradation index; and the surface curvature change was fitted from the topography point cloud sequence as a mechanical deformation index.

[0035] Based on the detection environment parameter logs, the highest temperature value and the exposure time of corrosive gases are extracted. The material degradation index, electrical degradation index, and mechanical deformation index are correlated with the highest temperature value and the exposure time of corrosive gases to obtain the correlated stress data. Based on the material degradation index, electrical degradation index, mechanical deformation index and the correlated stress data, a degradation feature vector set is constructed.

[0036] The degradation feature vector set is input into the pre-trained random forest classification model. The random forest classification model outputs the corrosion resistance level classification result and confidence score according to the preset grading rules. The thermal deformation index in the range of [0, 100] is obtained based on the mechanical deformation index, and the position coordinates of the failed pads on the chip substrate are marked.

[0037] A comprehensive evaluation report on substrate performance is generated based on corrosion resistance level, thermal deformation index, and the location coordinates of failed solder pads, and then transmitted to the display terminal.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] 1. By connecting the detection chamber and the heating chamber, and combining an impedance tester, an AC / DC electrical parameter tester, and a displacement sensor, the impedance spectrum sequence, pad electrical performance matrix sequence, and topographic point cloud sequence of the chip substrate can be acquired simultaneously. At the same time, the high temperature and corrosion environment can be dynamically simulated to ensure that the test data can truly reflect the performance status of the chip substrate under actual working conditions. This solves the problem of traditional chip substrate performance testing devices requiring multiple transfers during the testing process, eliminating the need to transfer the chip substrate between different testing devices and avoiding interference from environmental changes or mechanical contact during the transfer process.

[0040] 2. During the testing process, gas sensors, temperature sensors, and pressure sensors collect environmental parameters in real time. Displacement sensors continuously acquire probe Z-axis displacement data to update the topography point cloud sequence. Impedance testers and AC / DC parameter testers synchronously record changes in electrical parameters to obtain pad electrical performance matrix sequences and topography point cloud sequences. All data are integrated according to timestamps to obtain a degradation feature vector set, which captures the performance degradation trajectory of the chip substrate under different temperature and corrosion concentration conditions. This solves the problem that traditional testing methods cannot track dynamic performance changes and can track the dynamic changes in chip substrate performance as the testing process progresses in real time.

[0041] 3. The chip fixture, through a transmission structure of sliding rack and pinion and clamping gear, can clamp substrates of different sizes without frequent fixture changes; the test chip probe, with the cooperation of the first spring and the take-up reel, ensures stable contact with the substrate electrodes, avoiding poor contact or damage to the substrate; the probe matrix, guided by the second spring and the mounting cylinder, allows the bottom of the probe to fit against the pads on the chip substrate, while the displacement sensor's sensing protrusion on the probe side monitors the probe status in real time, improving the reliability of the testing device.

[0042] 4. By pulling the housing and the lifting frame, a linkage structure involving a rack, pinion, and lifting rack is established, synchronous linkage between the opening and closing of the detection isolation cover and the switching of the bearing sealing column position is achieved. This eliminates the need for an additional independent drive component to adjust the lifting frame, improving the ease of operation and the continuity of the testing process. When the operator pushes the housing from the open position to the closed position to close the detection isolation cover, the rack at the bottom of the sliding block synchronously drives the linkage gear on the rotating seat to rotate. The linkage gear further drives the lifting racks on both sides of the lifting frame to move, switching the lifting frame from the bearing position to the ventilation position, allowing the detection... The detection chamber and the heating chamber are connected through an air vent, allowing corrosive gases from the heating chamber to enter the detection chamber. When the housing is pulled from the closed position to the open position to open the detection isolation cover, the rack is driven in the opposite direction through the linkage gear to lift the rack, causing the lifting frame to return to the bearing position. This allows the bearing sealing column to pass through the air vent and contact the bottom of the chip substrate, achieving stable support for the substrate and blocking the connection between the detection chamber and the heating chamber. This linkage structure reduces the preparation steps before detection and avoids problems such as gas leakage and unstable substrate support caused by asynchronous movement of the detection isolation cover and the lifting frame, thus improving the safety of the detection process. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the assembled structure of the present invention;

[0044] Figure 2 This is a schematic diagram of the structure of the present invention after it has been unfolded;

[0045] Figure 3This is a schematic diagram of the AC / DC electrical parameter tester and impedance tester in this invention;

[0046] Figure 4 This is a schematic diagram of the structure of the clamping block and sliding rack assembled in this invention;

[0047] Figure 5 This is a schematic diagram of the structure of the clamping block and sliding rack after separation in this invention;

[0048] Figure 6 This is a schematic diagram of the structure after the mounting bracket and detection probe are assembled in this invention;

[0049] Figure 7 yes Figure 6 A schematic diagram of the disassembled structure;

[0050] Figure 8 This is a schematic diagram of the structure of the protective shell and clamping block after assembly in this invention;

[0051] Figure 9 This is a schematic diagram of the structure of the test chip probe and the protective shell after separation in this invention;

[0052] Figure 10 This is a schematic diagram of the structure after the load-bearing closed column and the heating isolation cover are separated in this invention;

[0053] Figure 11 This is a schematic diagram of the structure of the ultrasonic humidifier and the diaphragm vacuum pump assembled in this invention;

[0054] Figure 12 yes Figure 11 A schematic diagram of the disassembled structure;

[0055] Figure 13 This is a flowchart of the detection method of a chip substrate performance testing device according to the present invention;

[0056] Figure 14 This is a flowchart of the steps for obtaining a comprehensive evaluation report of substrate performance in the detection method of a chip substrate performance testing device of the present invention.

[0057] In the diagram, the correspondence between component names and drawing numbers is as follows:

[0058] 101. Detection housing; 102. Partition plate; 103. Placement cavity; 105. Detection cavity; 107. Heating cavity; 108. Heating isolation cover; 109. Chip substrate; 115. Control module; 116. Display terminal; 117. Detection partition plate; 118. Detection outer shell; 119. Pull housing; 120. Supporting sealing column; 121. Lifting frame; 122. Vent; 123. Through hole; 124. First sealing sleeve; 125. Sliding block; 126. 127. Sliding channel; 128. Limiting post; 129. Limiting strip; 130. Rotating seat; 131. Linkage gear; 132. Driving rack; 133. Connecting frame; 134. Lifting rack; 135. Gas sensor; 136. Temperature sensor; 137. Pressure sensor; 201. Fixture mounting block; 202. Sliding groove; 203. Sliding rack; 204. Limiting plate; 205. Clamping block; 206. Transmission hole; 207. Clamping gear; 208. Transmission shaft 209. Clamping servo motor; 210. Second sealing sleeve; 211. Mounting bracket; 212. Bearing; 301. Ultrasonic humidifier; 302. Connector; 303. Heating module; 305. Return hole; 306. Horn-shaped gas-gathering hood; 307. Filter screen; 308. Electromagnetic regulating valve; 309. T-connector; 310. Return pipe; 311. Return check valve; 312. Diaphragm vacuum pump; 313. Insulation layer; 401. Sliding hole; 402. Test chip probe 403. Head; 404. Impedance tester; 405. Protective housing; 406. Take-up reel; 407. Corrosion-resistant connecting wire; 408. Connecting socket; 409. First spring; 5001. Detection probe; 501. AC / DC parameter tester; 502. Displacement sensor; 503. Mounting cylinder; 504. Mounting bracket; 505. Second spring; 506. Mounting hole; 507. Sensing protrusion; 508. Data connector; 510. Pinhole socket; 511. Pinhole plug. Detailed Implementation

[0059] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate the technical solutions of the present invention, but should not be used to limit the scope of protection of the present invention.

[0060] Example: As attached Figures 1 to 12 As shown:

[0061] This invention provides a chip substrate performance testing device, comprising:

[0062] The detection housing 101 has a placement cavity 103 and an equipment cavity formed by a partition plate 102. The top of the partition plate 102 is provided with a detection isolation cover forming a detection cavity 105, and the bottom of the partition plate 102 is provided with a heating isolation cover 108 forming a heating cavity 107. The detection cavity 105 and the heating cavity 107 are in communication.

[0063] The chip fixture is installed inside the detection cavity 105. The chip fixture is used to fix the chip substrate 109 to be tested. When in use, the chip substrate 109 is placed in the clamping area of ​​the chip fixture. The chip fixture keeps the chip substrate 109 stable and avoids substrate displacement during the detection process, which would affect data acquisition.

[0064] Impedance tester 403 is electrically connected to four sets of test chip probes 402 mounted on the chip fixture. The four sets of test chip probes 402 are connected to electrodes on the chip substrate 109. Impedance tester 403 is used to acquire impedance spectrum sequence. During testing, impedance tester 403 outputs AC test signal to the four sets of test chip probes 402. The signal is transmitted to the electrodes of chip substrate 109 through the test chip probes 402. Impedance tester 403 synchronously acquires the voltage and current response at both ends of the electrodes and generates impedance spectrum sequence based on the phase difference and amplitude change of voltage and current.

[0065] AC / DC electrical parameter tester 502 is electrically connected to a probe matrix installed on top of the detection isolation cover. The bottom end of the probe matrix contacts the pads on the chip substrate 109. AC / DC electrical parameter tester 502 is used to acquire the pad electrical performance matrix sequence. In use, AC / DC electrical parameter tester 502 sends a row selection signal to the probe matrix to activate the detection probes 501 in the probe matrix row by row. The activated detection probes 501 apply a micro current to the corresponding pads. AC / DC electrical parameter tester 502 measures the conduction resistance and leakage current to ground between the pads in real time and organizes the test data of all pads into a pad electrical performance matrix sequence by rows and columns.

[0066] The probe matrix is ​​equipped with multiple sets of displacement sensors 503 for acquiring vertical displacement feedback data. The detection ends of the multiple sets of displacement sensors 503 are respectively facing the multiple sets of detection probes 501 in the probe matrix. During the detection process, the displacement sensors 503 continuously monitor the Z-axis displacement of the corresponding detection probe 501 and judge the morphological changes on the surface of the chip substrate 109 based on the displacement changes.

[0067] The control module 115 is installed on one side of the testing housing 101. It is used to acquire a comprehensive evaluation report of the substrate performance and transmit it to the display terminal 116. The control module 115 receives all the data transmitted by the impedance tester 403, the AC / DC parameter tester 502 and the displacement sensor 503, analyzes them in conjunction with the environmental parameters during the testing process, and generates a comprehensive evaluation report that includes the heat resistance, corrosion resistance and electrical stability of the chip substrate 109. The report is then transmitted to the display terminal 116, and the operator can view the test results through the display terminal 116.

[0068] Specifically, through the connection between the detection chamber 105 and the heating chamber 107, the heating module 303 on the periphery of the heating isolation cover 108 heats the corrosive gas in the heating chamber 107 during detection. The heated corrosive gas enters the detection chamber 105 through the vent 122 on the partition plate 102, realizing the dynamic simulation of the high temperature and corrosion complex environment of the chip substrate 109. Combined with the impedance tester 403, AC / DC parameter tester 502 and displacement sensor 503, the impedance spectrum sequence, pad electrical performance matrix sequence and topography point cloud sequence of the chip substrate 109 can be acquired simultaneously. The topographic point cloud sequence is synchronously transmitted to the control module 115 to ensure that the test data can truly reflect the performance status of the chip substrate 109 under actual working conditions. This solves the problem that traditional chip substrate performance testing devices need to first complete the high-temperature treatment of the substrate in the heating equipment before transferring it to the electrical testing equipment for parameter testing. During the transfer process, the substrate temperature drops and the surface may be contaminated with impurities. However, this device, through the connection between the detection chamber 105 and the heating chamber 107 and the integration of multiple detection modules, ensures that the chip substrate 109 is always in the same detection environment to complete multi-dimensional testing, avoiding interference from environmental changes or mechanical contact during the transfer process.

[0069] Please see as follows Figure 10 As shown, the chip fixture includes a fixture mounting block 201 mounted on top of the partition plate 102. The detection isolation cover includes a detection partition plate 117. The fixture mounting block 201 is provided with the detection partition plate 117 around its periphery. A detection housing 118 is provided on one side of the detection partition plate 117. A pull housing 119 for opening and closing the detection isolation cover is provided on the side of the detection housing 118 away from the detection partition plate 117. The operator can open and close the detection isolation cover by pulling or pushing the pull housing 119. When open, it is used to place or remove the chip substrate 109. When closed, a closed detection chamber 105 is formed between the detection partition 117, the detection housing 118, and the pull housing 119, providing a closed environment for the detection of the chip substrate 109 and preventing external environmental factors from interfering with the detection process. Both the detection isolation cover and the heating isolation cover 108 are provided with sealing gaskets between themselves and the partition plate 102, and sealing layers are provided at the gaps between the detection partition 117, the detection housing 118, and the pull housing 119. This prevents corrosive gases in the detection chamber 105 or the heating chamber 107 from leaking through the gaps.

[0070] The bottom of the heating isolation cover 108 is provided with a lifting frame 121 for moving the four sets of bearing sealing columns 120 to the bearing position in the detection chamber 105 or the ventilation position in the heating chamber 107. The four sets of bearing sealing columns 120 correspond to the four sets of positioning grooves at the bottom of the chip substrate 109. The partition plate 102 is provided with four sets of air outlets 122. The air outlets 122 are used to realize the gas flow between the detection chamber 105 and the heating chamber 107. The bottom of the heating isolation cover 108 is provided with four sets of through holes 123. The four sets of air outlets 122 and through holes 123 are each provided with a first sealing sleeve 124 to prevent corrosive gas from leaking from the gap between the hole wall and the bearing sealing column 120.

[0071] Furthermore, when the lifting frame 121 is in the bearing position, the lifting frame 121 drives the four sets of bearing sealing columns 120 to move upward, so that the tops of the four sets of bearing sealing columns 120 pass through the four sets of through holes 123 and vent holes 122 respectively and contact the bottom of the chip substrate 109. At this time, the bearing sealing columns 120 can support the chip substrate 109, and at the same time, the bearing sealing columns 120 block the vent holes 122, so that the detection chamber 105 and the heating chamber 107 are not connected. When the lifting frame 121 is in the ventilation position, the lifting frame 121 drives the four sets of bearing sealing columns 120 to move downward, so that the four sets of bearing sealing columns 120 pass through the four sets of through holes 123 respectively. At this time, the vent holes 122 are no longer blocked, and the detection chamber 105 and the heating chamber 107 are connected through the four sets of vent holes 122. The corrosive gas heated by the heating module 303 in the heating chamber 107 can enter the detection chamber 105 through the vent holes 122, simulating a high-temperature corrosion environment for the chip substrate 109.

[0072] Specifically, when performing high-temperature corrosion performance testing on the chip substrate 109, the operator first pulls the pull housing 119 to open the testing isolation cover, places the positioning groove at the bottom of the chip substrate 109 on the four sets of supporting sealing pillars 120, starts the chip clamp to hold the chip substrate 109, and then pushes the pull housing 119 to close the testing isolation cover. The lifting frame 121 moves to the ventilation position, the supporting sealing pillars 120 move down into the through hole 123, the vent 122 is opened, and the heating module 303 on the periphery of the heating isolation cover 108 heats the corrosive gas in the heating chamber 107. The heated corrosive gas enters the testing chamber 105 through the vent 122, so that a high-temperature corrosion environment is formed in the testing chamber 105.

[0073] Please see as follows Figure 10As shown, sliding blocks 125 are provided on both sides of the pull housing 119, and sliding grooves 126 are provided on both sets of sliding blocks 125. Limiting posts 127 on both sides of the detection housing 118 are respectively inserted into the two sets of sliding grooves 126. Limiting strips 128 are also provided on both sides of the detection housing 118. The two sets of limiting strips 128 are slidably connected to the top of the two sets of sliding blocks 125, providing guidance for pulling or pushing the pull housing 119 and limiting the vertical displacement of the sliding blocks 125 to ensure the stability of the movement of the pull housing 119. Two sets of through slots are provided on the partition plate 102, and a rotating seat 129 is provided on one side of each set of through slots. A linkage is provided on the rotating seat 129. Gear 130, the linkage gear 130 can rotate on one side of the rotating seat 129. The bottom of the sliding block 125 is provided with a driving rack 131. The two sides of the lifting frame 121 are connected to two sets of lifting racks 133 through two sets of connecting frames 132 respectively. The connecting frames 132 fix the lifting frame 121 and the lifting racks 133 into one piece, so that the movement of the lifting racks 133 can directly drive the lifting frame 121 to move synchronously. One side of the linkage gear 130 meshes with the lifting rack 133, and the top meshes with the driving rack 131. When the driving rack 131 moves with the sliding block 125, it will drive the linkage gear 130 to rotate, thereby driving the lifting rack 133 to move up and down.

[0074] Specifically, when the housing 119 is pulled to the open position to open the detection isolation cover, the operator can place the chip substrate 109 on the fixture mounting block 201 or remove it from it. At this time, the lifting frame 121 moves to the bearing position, and the tops of the four sets of bearing sealing columns 120 pass through the vent holes 122 and contact the bottom of the chip substrate 109, forming a stable support for the chip substrate 109. When the housing 119 is pulled to the closed position to close the detection isolation cover, the detection chamber 105 forms a closed space. At this time, the lifting frame 121 moves to the ventilation position, and the bearing sealing columns 120 retract into the through hole 123. The detection chamber 105 and the heating chamber 107 are connected through the vent holes 122.

[0075] Furthermore, by pulling the housing 119 and the lifting frame 121 through the linkage structure of the rack 131, the linkage gear 130, and the lifting rack 133, the opening and closing of the detection isolation cover and the position switching of the bearing sealing column 120 are synchronously linked, eliminating the need for an additional independent drive component to adjust the lifting frame 121, thus improving the ease of operation and the continuity of the detection process. When the operator pushes the housing 119 to move it from the open position to the closed position to close the detection isolation cover, the sliding block 125 slides along the limiting column 127 and the limiting strip 128. The driving rack 131 at the bottom of the sliding block 125 synchronously drives the linkage gear 130 on the rotating seat 129 to rotate. The linkage gear 130 further drives the lifting racks 133 on both sides of the lifting frame 121 to move downwards, which is then driven by the connecting frame 132. The lifting frame 121 switches from the bearing position to the ventilation position, allowing the detection chamber 105 and the heating chamber 107 to be connected through the vent 122. This allows the heated corrosive gas in the heating chamber 107 to smoothly enter the detection chamber 105, providing a high-temperature corrosion detection environment for the chip substrate 109. When the housing 119 is pulled from the closed position to the open position to open the detection isolation cover, the sliding block 125 moves in the opposite direction, causing the rack 131 to drive the lifting rack 133 to move upward through the linkage gear 130. This resets the lifting frame 121 to the bearing position, allowing the bearing sealing column 120 to pass through the vent 122 and contact the bottom of the chip substrate 109. This provides stable support for the chip substrate and blocks the connection between the detection chamber 105 and the heating chamber 107, preventing gas leakage from the heating chamber 107 when the detection isolation cover is opened.

[0076] Please see as follows Figure 8 , Figure 11 and Figure 12 As shown, the device cavity is equipped with an ultrasonic humidifier 301 for outputting corrosive gas. In use, a pre-concentrated corrosive liquid is added to the container at the top of the ultrasonic humidifier 301. After the ultrasonic humidifier 301 is turned on, it atomizes the corrosive liquid into corrosive gas through ultrasonic vibration. A connector 302 communicating with the heating cavity 107 is provided on one side of the heating isolation cover 108. The outlet of the ultrasonic humidifier 301 is connected to the connector 302 through a pipeline. The atomized corrosive gas can enter the heating cavity 107 through the pipeline and the connector 302. A heating module 303 for heating the corrosive gas in the heating cavity 107 is provided around the heating isolation cover 108. The heating module 303 heats the corrosive gas entering the heating cavity 107 to make the corrosive gas reach the temperature required for detection, thus meeting the detection requirements of the chip substrate 109 in a high-temperature corrosive environment. A gas sensor 134 for detecting the concentration of corrosive gas is provided in the detection cavity 105. A temperature sensor 135 is also provided in the detection cavity 105.

[0077] A pressure sensor 136 is installed inside the detection chamber 105. Two sets of reflux holes 305 are opened at the top of the partition plate 102 corresponding to the detection chamber 105. These two sets of reflux holes 305 are used to allow the corrosive gas inside the detection chamber 105 to reflux. Each set of reflux holes 305 has a horn-shaped gas-gathering hood 306 at its top, and a filter screen 307 is installed inside the horn-shaped gas-gathering hood 306. The filter screen 307 can filter impurities that may be carried in the corrosive gas, preventing impurities from entering the ultrasonic humidifier 301 with the reflux gas and causing blockage or contamination. Each set of reflux holes 305 has an electromagnetic regulating valve 308 at its bottom. The electromagnetic regulating valve 308 is controlled by the control module 115 to adjust the opening and closing degree, thereby regulating the flow rate of the reflux gas. The two sets of electromagnetic regulating valves 308 are connected to one end of the reflux pipe 310 through a three-way pipe 309, and the gas is filtered by the filter screen 307. The corrosive gas can enter the electromagnetic regulating valve 308 through the reflux hole 305, and then be collected into the reflux pipe 310 through the three-way pipe 309. The reflux end of the ultrasonic humidifier 301 is equipped with a reflux check valve 311, which can prevent the corrosive liquid or the corrosive gas that has been returned from the ultrasonic humidifier 301 from flowing back into the reflux pipe 310, ensuring one-way gas reflux. The other end of the reflux pipe 310 is connected to the reflux check valve 311. A diaphragm vacuum pump 312 is provided on the reflux pipe 310 to provide reflux power for the corrosive gas in the detection chamber 105, realizing the recycling of the corrosive gas. A heat insulation layer 313 is provided around the reflux pipe 310, which can reduce the heat loss of the corrosive gas in the reflux pipe 310 and prevent the gas from condensing into liquid due to the temperature drop during the reflux process.

[0078] Specifically, environmental parameters during the detection process are recorded by gas sensor 134, temperature sensor 135, and pressure sensor 136. Gas sensor 134 collects the concentration data of corrosive gas in detection chamber 105 every minute, temperature sensor 135 collects the temperature data in detection chamber 105 every 30 seconds, and pressure sensor 136 collects the pressure data in the chamber every 2 minutes. These data are transmitted to control module 115 in real time according to timestamps. Control module 115 integrates the data into a detection environment parameter log and stores it.

[0079] Please see as follows Figure 4 and Figure 5As shown, the clamp mounting block 201 has two sets of sliding channels 202 on one side, and two sets of symmetrical sliding racks 203 are respectively provided in the two sets of sliding channels 202. The two sets of sliding channels 202 provide a moving track for the two sets of sliding racks 203. In use, the two sets of sliding racks 203 can slide along the extension direction of the sliding channels 202. The clamp mounting block 201 also has a limiting plate 204 on one side corresponding to the two sets of sliding channels 202, which can limit the sliding racks 203 within the sliding channels 202 and prevent them from falling out. The two sets of sliding racks 203 have a clamping block 205 on one side for clamping the chip substrate 109. The inner side of the clamping block 205 is provided with a buffer layer that contacts the two side edges of the chip substrate 109. The relative movement of the clamping block 205 achieves clamping or loosening of the chip substrate 109. A transmission hole 206 is provided between the two sets of sliding channels 202. A clamping gear 207 is provided at one end of the transmission hole 206. The top and bottom of the clamping gear 207 mesh with two sets of sliding racks 203 respectively. When the clamping gear 207 rotates, it can drive the two sets of sliding racks 203 to move relative to each other through tooth transmission. One end of the transmission shaft 208 is connected to the clamping gear 207, and the other end is connected to the clamping servo motor 209. The output shaft is connected to the clamping servo motor 209. After the clamping servo motor 209 is powered on, the rotational power of its output shaft can be directly transmitted to the clamping gear 207 through the transmission shaft 208, causing the clamping gear 207 to rotate synchronously with the transmission shaft 208. The clamping servo motor 209 is a servo motor and can obtain rotational torque through force feedback. The other end of the transmission hole 206 is provided with a second sealing sleeve 210. The second sealing sleeve 210 is fitted around the transmission shaft 208 and can fill the gap between the transmission shaft 208 and the hole wall of the transmission hole 206, preventing corrosive gas in the detection cavity 105 from leaking from the transmission hole 206 to the clamping gear. The mounting block 201 has an outer side to prevent corrosive gases from contacting and damaging the clamping servo motor 209 or other external components. A mounting bracket 211 is provided on the side of the clamping mounting block 201 away from the detection cavity 105. The mounting bracket 211 provides support for the clamping servo motor 209. The clamping servo motor 209 is mounted on one side of the mounting bracket 211. Two sets of bearings 212 are provided on the mounting bracket 211. The drive shaft 208 passes through the two sets of bearings 212 to reduce the resistance when the drive shaft 208 rotates, making the rotation of the drive shaft 208 smoother, and at the same time reducing the error in the rotational torque obtained by the clamping servo motor 209.

[0080] Specifically, the clamping servo motor 209 is started to drive the transmission shaft 208 and the clamping gear 207 to rotate. The rotation of the clamping gear 207 causes the two sets of sliding racks 203 to move relative to each other, thereby adjusting the distance between the two sets of clamping blocks 205 to clamp the chip substrate 109.

[0081] Please see as follows Figure 8 and Figure 9As shown, each of the two sets of clamping blocks 205 has two sets of sliding holes 401. One end of each of the four sets of test chip probes 402 passes through one of the four sets of sliding holes 401. The sliding holes 401 provide axial movement space for the test chip probes 402, allowing them to extend and retract along the axial direction of the sliding holes 401, ensuring that one end can flexibly contact or detach from the electrodes on the chip substrate 109. One end of the sliding hole 401 is provided with a protective shell 404, and a first spring 408 is provided inside the protective shell 404. One end of the first spring 408 contacts the test chip probe 402. When the test chip probe 402 contacts the chip substrate 109... When the electrodes come into contact, the first spring 408 is compressed and generates a reverse elastic force, keeping the probe in contact with the electrodes. The protective shell 404 encloses the other end of the test chip probe 402 and the first spring 408, preventing corrosive gases in the detection chamber 105 from directly contacting the first spring 408 and the rear end of the test chip probe 402. The other end of the test chip probe 402 passes through the protective shell 404, allowing it to move stably under the guidance of the protective shell 404 and the sliding hole 401. Both sides of the detection shell 118 are provided with take-up reels 405, which can use their own coiling spring structure to prevent corrosion. The wire 406 is wound or released. A corrosion-resistant connecting wire 406 is wound on the take-up reel 405. The corrosion-resistant connecting wire 406 is made of acid and alkali resistant material, maintaining stable conductivity in corrosive environments. One end of the corrosion-resistant connecting wire 406 passes through a through-hole on one side of the protective housing 404 and connects to the test chip probe 402, enabling electrical connection between the test chip probe 402 and external devices. The winding force of the take-up reel 405 is greater than the minimum elastic force of the first spring 408. This ensures that when the test chip probe 402 expands or contracts due to changes in substrate thickness or movement of the clamps, the corrosion-resistant connecting wire 406 can be protected by the take-up reel 405 and... The winding mechanism prevents the connecting wires from becoming loose and tangled. A connecting socket 407 is provided on one side of the winding reel 405. The corrosion-resistant connecting wire 406 is electrically connected to the connecting socket 407. The connecting socket 407 serves as an intermediate interface, facilitating the connection of the corrosion-resistant connecting wire 406 to the wires of the impedance tester 403. A third sealing sleeve is provided inside the through hole to prevent corrosive gases in the detection chamber 105 from leaking out of the through hole. The impedance tester 403 is installed inside the placement chamber 103. The impedance tester 403 is connected to two sets of connecting sockets 407 via wires, enabling the impedance tester 403 to obtain the impedance spectrum sequence of the chip substrate 109 through the test chip probe 402.

[0082] Specifically, when the clamping block 205 clamps the chip substrate 109, the end of the test chip probe 402 facing the substrate will contact the electrode on the chip substrate 109. The test chip probe 402 will retract into the protective shell 404 along the sliding hole 401. The compression of the first spring 408 increases, and the elastic force increases accordingly, which can still ensure that the test chip probe 402 is in contact with the electrode. Its elastic force pushes the test chip probe 402 to maintain contact with the electrode, ensuring stable electrical signal transmission. At the same time, the anti-corrosion connecting wire 406 is pulled out due to the probe retraction. The winding reel 405 will generate winding force under the action of its own winding spring, so that the connecting wire remains taut and not loose.

[0083] Please see as follows Figure 6 and Figure 7 As shown, the probe matrix includes multiple sets of detection probes 501. Multiple sets of mounting cylinders 504 are provided inside the detection isolation cover. The bottom ends of the multiple sets of detection probes 501 are respectively inserted into the multiple sets of mounting cylinders 504, which provide vertical movement guidance for the detection probes 501. A mounting bracket 505 is installed on the top of the detection isolation cover. Multiple sets of grooves are formed on the bottom of the mounting bracket 505 corresponding to the multiple sets of detection probes 501. Multiple sets of second springs 506 are respectively provided between the multiple sets of grooves and the multiple sets of detection probes 501. The multiple sets of second springs 506 contact the top ends of the multiple sets of detection probes 501. When the bottom end of the detection probe 501 contacts the pad on the chip substrate 109, the second springs 506 are compressed and generate a downward elastic force, ensuring that the detection probe 501 always maintains close contact with the pad, ensuring stable electrical signal transmission. Multiple sets of mounting holes 507 are formed on the top of the mounting bracket 505, providing mounting positions for displacement sensors 503. Displacement sensors 503 are installed in each of the multiple sets of mounting holes 507. 03. Displacement sensor 503 is used to detect the vertical displacement of detection probe 501. Multiple sets of detection probes 501 are provided with sensing protrusions 508 on one side. The sensing protrusions 508 move synchronously with the detection probes 501. Multiple sets of displacement sensors 503 are respectively facing multiple sets of sensing protrusions 508. When the detection probes 501 move up and down, the position of the sensing protrusions 508 changes accordingly. The displacement sensor 503 monitors the position change of the sensing protrusions 508. The top of the mounting bracket 505 is provided with a data connector 509. The data connector 509 is used to collect the signals of detection probes 501 and displacement sensors 503. Pinhole sockets 510 are provided on both sides of the data connector 509. Multiple sets of displacement sensors 503 and probe matrix are connected to two sets of pinhole plugs 511 and two sets of pinhole sockets 510 respectively through wires. The data connector 509 is electrically connected to the AC / DC power parameter tester 502 installed in the placement cavity 103, so that the AC / DC power parameter tester 502 can obtain the pad electrical performance matrix sequence through the detection probes 501.

[0084] Specifically, after the detection isolation cover is closed, the bottom ends of multiple sets of detection probes 501 make contact with multiple pads on the chip substrate 109 one by one under the elastic force of the second spring 506. During the detection process, the AC / DC parameter tester 502 sends row selection signals to the detection probes 501 to activate the probes row by row. The activated detection probes 501 apply microcurrents to the corresponding pads and then transmit the detected on-resistance, leakage current and other signals back to the AC / DC parameter tester 502 to form a pad electrical performance matrix sequence. At the same time, if the chip substrate 109 deforms during the detection process, the detection probes 501 at the corresponding positions will move accordingly. The displacement sensor 503 monitors the position of the sensing protrusion 508 in real time. Due to the deformation of the chip substrate 109, the detection probes 501 will undergo vertical displacement, and the sensing protrusion 508 will move accordingly. After the displacement sensor 503 captures this displacement, it transmits the data to the data connector 509 through wires, pinhole plugs 511 and pinhole sockets 510, and then feeds it back to the control module 115 to generate a topographic point cloud sequence.

[0085] Please see as follows Figure 13 and Figure 14 As shown, the present invention also provides a detection method for a chip substrate performance testing device, applied to the aforementioned chip substrate performance testing device, comprising:

[0086] S10: Obtain impedance spectrum sequence based on test chip probe, obtain pad electrical performance matrix sequence based on AC / DC electrical parameter tester, and obtain topographic point cloud sequence based on displacement sensor.

[0087] Specifically, the impedance tester 403 injects AC test signals into the electrodes at both ends of the chip substrate 109 through two sets of test chip probes 402. These AC test signals cover multiple frequency points from 1kHz to 1MHz. During the injection process, the test chip probes 402 simultaneously receive the electrical signals fed back from the electrodes of the chip substrate 109. The impedance tester 403 synchronously measures the phase difference and amplitude response of the voltage and current at each frequency point and arranges these data in frequency order to form an impedance spectrum sequence.

[0088] Each detection probe 501 in the probe matrix corresponds to a pad on the chip substrate 109. The AC / DC power parameter tester 502 sends a row strobe signal to the probe matrix. The row strobe signal activates all detection probes 501 in the first row of the probe matrix, putting them in a ready-to-work state. Then, activation signals are sent to the detection probes 501 in the current row in column order. The activated detection probes 501 apply current to the corresponding pads. At the same time, the AC / DC power parameter tester 502 measures the on-resistance value between adjacent pads and the leakage current value relative to the ground terminal of the pad through other detection probes 501. After completing the scanning of all columns in the first row, the row strobe signal switches to the second row and repeats the above column scanning process until all detection probes 501 in all rows have completed the scanning. The on-resistance value and leakage current value of all pads are recorded according to the row and column positions to form a pad electrical performance matrix sequence.

[0089] The displacement sensor 503 acquires the Z-axis displacement of each detection probe 501 in the probe matrix in real time. At the same time, a uniformly divided substrate grid is generated according to the actual size of the chip substrate 109. The X and Y coordinates of each detection probe 501 in the probe matrix are mapped to the substrate grid and correspond to specific substrate grid nodes. The Z-axis coordinate when the detection probe 501 is not in contact with the chip substrate 109 is used as the initial Z-axis coordinate. The real-time Z-axis displacement value is subtracted from the initial Z-axis coordinate to obtain the height value of each substrate grid node. The X coordinate, Y coordinate and height value of each substrate grid node are stored in the (X,Y,Z) format to form a topographic point cloud sequence.

[0090] For example, when the chip substrate 109 undergoes internal circuit oxidation in a high-temperature corrosive environment, the amplitude response in a specific frequency range will decrease significantly. This change can be captured by impedance spectrum sequence. Furthermore, if the on-resistance value at a certain position in the probe matrix is ​​much higher than the surrounding values, it indicates that the pad at that position may have a poor solder joint or oxidation problem. Also, when the chip substrate 109 experiences local warping at high temperature, the Z value of the substrate mesh node in the corresponding area will increase or decrease. The warped area and the degree of deformation can be located by topographic point cloud sequence.

[0091] S11: Perform dynamic control operation of the environmental chamber based on the preset corrosive gas concentration and temperature curves, and obtain the detection environment parameter log. The preset corrosive gas concentration and temperature curves need to be set according to the actual application scenario of the chip substrate 109.

[0092] Specifically, when corrosive gas is injected into the detection chamber 105 based on a preset corrosive gas concentration curve, the control module 115 will adjust the concentration according to the current stage of the corrosion gas concentration curve. If the current stage of the curve requires a higher concentration, the ultrasonic humidifier 301 will increase the atomization volume to generate more corrosive gas. The gas enters the heating chamber 107 through the pipe and connector 302, and then enters the detection chamber 105 through the connected air outlet 122. During this process, the gas sensor 134 in the detection chamber 105 continuously monitors the concentration of corrosive gas in the chamber, collecting real-time corrosion gas concentration data every minute and transmitting the data to the control module 115. If the real-time concentration is lower than the preset value of the curve, the control module 115 will further increase the atomization volume of the ultrasonic humidifier 301. If the real-time concentration is higher than the preset value, the atomization volume will be reduced or atomization will be paused to ensure that the concentration of corrosive gas in the detection chamber 105 always matches the preset curve. When the heating module 303 is activated to heat the corrosive gas in the heating chamber 107 based on the preset temperature curve, the control module 115 will adjust the temperature according to the temperature curve. Based on the current temperature requirements of the temperature curve, the output power of the heating module 303 is adjusted. If the temperature curve requires a temperature increase, the heating module 303 increases its power to quickly heat the corrosive gas entering the heating chamber 107. The heated gas, carrying heat, enters the detection chamber 105 through the air outlet 122, causing the temperature inside the detection chamber 105 to gradually rise. The temperature sensor 135 inside the detection chamber 105 captures the ambient temperature in real time and feeds back the real-time temperature data to the control module 115 every 30 seconds. If the real-time temperature does not reach the preset value of the curve, the control module 115 increases the power of the heating module 303; if the temperature exceeds the preset value, it decreases the power to ensure that the temperature inside the detection chamber 105 stably follows the preset curve. When integrating the real-time corrosive gas concentration data and the real-time ambient temperature into a detection environment parameter log, the control module 115 adds a corresponding timestamp to each set of collected real-time concentration and temperature data, and records the operation nodes and adjustment ranges for each adjustment of the atomization amount of the ultrasonic humidifier 301 and the power of the heating module 303.

[0093] For example, at a certain moment, the gas sensor 134 collects a concentration of 48 ppm, and the control module 115 instructs the ultrasonic humidifier 301 to increase the atomization amount by 10%. The time, real-time concentration, and adjustment instructions during this process will be completely recorded. If the detection continues for 100 hours, the log will store all real-time concentrations, real-time temperatures, and equipment adjustment information within 100 hours in chronological order, forming a complete detection environment parameter log. When analyzing the performance changes of the chip substrate 109 later, the environmental conditions of the substrate during a certain period can be traced through this log.

[0094] S12: Obtain a degradation feature vector set based on impedance spectrum sequence, pad electrical performance matrix sequence, topography point cloud sequence and detection environment parameter log, obtain a comprehensive evaluation report of substrate performance based on the degradation feature vector set and transmit it to the display terminal.

[0095] Obtaining a comprehensive evaluation report of substrate performance includes:

[0096] S20: Extract the amplitude attenuation rate of characteristic frequency points from the impedance spectrum sequence as a material degradation index; extract the weld failure ratio and average resistance change rate from the electrical performance matrix sequence as an electrical degradation index; and fit the surface curvature change from the topography point cloud sequence as a mechanical deformation index.

[0097] Specifically, when extracting the amplitude attenuation rate of characteristic frequency points from the impedance spectrum sequence as a material degradation index, the key frequency points commonly used in actual operation of the chip substrate 109 are obtained from the database. The initial amplitude and post-detection amplitude of these characteristic frequency points at the initial stage and the end of the detection are extracted again. The amplitude attenuation rate is obtained based on the initial amplitude and post-detection amplitude. For example, if the initial amplitude of a 1MHz frequency point is 12V, and the amplitude of the same frequency point after detection is 9.6V, the amplitude attenuation rate is 20% after calculation by "(initial amplitude - post-detection amplitude) / initial amplitude × 100%", which reflects the degree of degradation of the conductive material inside the chip substrate 109 under the detection environment. The higher the attenuation rate, the more obvious the decrease in the conductivity of the material.

[0098] When extracting the solder joint failure rate and average resistance change rate as electrical degradation indicators from the solder pad electrical performance matrix sequence, the preset solder joint failure judgment criteria are first obtained from the database, and the failure rate of the number of failed solder pads in the matrix is ​​counted to account for the total number of solder pads. At the same time, the difference in conduction resistance before and after the detection of all solder pads is calculated, and the average value of the difference is divided by the average value of the initial conduction resistance to obtain the average resistance change rate. The failure rate and the average resistance change rate reflect the overall reliability of the solder pad connection and the overall trend of electrical performance change, respectively.

[0099] When fitting the surface curvature change from the topographic point cloud sequence as a mechanical deformation index, the least squares method is used to fit the surface of the substrate grid node (X,Y,Z) data on the top surface of the chip substrate 109 to obtain the surface curvature values ​​at the initial detection stage and after detection. The difference between the two is the surface curvature change. The surface curvature change can quantify the degree of mechanical deformation of the chip substrate 109 under the detection environment. The larger the change, the more obvious the substrate warping or depression.

[0100] S21: Extract the highest temperature value and corrosive gas exposure time from the detection environment parameter log, correlate the material degradation index, electrical degradation index, and mechanical deformation index with the highest temperature value and corrosive gas exposure time to obtain the associated stress data, and construct a degradation feature vector set based on the material degradation index, electrical degradation index, mechanical deformation index and associated stress data.

[0101] Specifically, when extracting the highest temperature value and corrosive gas exposure time from the test environment parameter log, the highest temperature throughout the test is selected from the timestamp data of the log. The total time from the start of contact with corrosive gas to the end of the test for the chip substrate 109 is calculated. The material degradation index, electrical degradation index, and mechanical deformation index are correlated with the highest temperature value and corrosive gas exposure time to form correlated stress data.

[0102] For example, under corrosion exposure conditions of 85℃ and 100 hours, the characteristic frequency amplitude attenuation rate is 20%, the weld failure rate is 10%, the average resistance change rate is 20%, and the surface curvature change is 0.002 / mm. Based on these material degradation indicators, electrical degradation indicators, mechanical deformation indicators, and associated stress data, a degradation feature vector set [20%, 10%, 20%, 0.002 / mm, 85℃, 100h] is formed according to a fixed format. The degradation feature vector set is then input into a pre-trained random forest classification model.

[0103] S22: Input the set of degraded feature vectors into the pre-trained random forest classification model. The random forest classification model outputs the corrosion resistance level classification result and confidence score according to the preset grading rules. Based on the mechanical deformation index, the thermal deformation index in the range of [0, 100] is obtained, and the position coordinates of the failed pads on the chip substrate are marked.

[0104] Specifically, the random forest classification model needs to be trained in advance with a large amount of chip substrate detection data under different environmental stresses. It has the ability to judge corrosion resistance based on degradation indicators and preset grading rules, such as dividing corrosion resistance into 1-5 levels, where level 1 is the best and level 5 is the worst.

[0105] Among them, a corrosion resistance level of ≤5% for characteristic frequency amplitude attenuation is represented as Level 1; 5%-15% for characteristic frequency amplitude attenuation is represented as Level 2; 15%-25% for characteristic frequency amplitude attenuation is represented as Level 3; 25%-35% for characteristic frequency amplitude attenuation is represented as Level 4; and >35% for characteristic frequency amplitude attenuation is represented as Level 5.

[0106] After receiving the aforementioned degraded feature vector set, the random forest classification model outputs the corrosion resistance level classification result according to the built-in rules. When obtaining the thermal deformation resistance index in the range [0, 100] based on the mechanical deformation index, the preset conversion rules are as follows: when the surface curvature change is 0, the thermal deformation resistance index is 100; when the surface curvature change reaches 0.004 / mm, the thermal deformation resistance index is 0. The conversion is performed linearly in between. The aforementioned surface curvature change of 0.002 / mm corresponds to the thermal deformation resistance index of 50. This index directly reflects the ability of the chip substrate 109 to resist thermal deformation. When marking the position coordinates of the failed pads on the chip substrate 109, the row and column numbers of the failed pads in the matrix are determined from the pad electrical performance matrix sequence. Combined with the substrate grid division rules, the row and column numbers are converted into the actual X and Y coordinates of the substrate.

[0107] For example, if the pad in the 8th row and 12th column of the matrix fails, the corresponding coordinates on the chip substrate 109 are (12mm, 8mm). Based on the corrosion resistance level 3, the thermal deformation index 50, and the location coordinates of the failed pad (12mm, 8mm) and (15mm, 20mm), a comprehensive evaluation report of the substrate performance is generated. The report should also include trend graphs of various degradation indicators and a table of related stress data.

[0108] S23: Generate a comprehensive evaluation report of substrate performance based on corrosion resistance level, thermal deformation index and the location coordinates of failed solder pads, and transmit it to the display terminal.

[0109] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A chip substrate performance testing device, characterized in that, include: The detection housing has a partition plate forming a placement cavity and an equipment cavity. The top of the partition plate is equipped with a detection isolation cover that forms the detection cavity, and the bottom of the partition plate is equipped with a heating isolation cover that forms the heating cavity. The detection cavity and the heating cavity are connected. Chip clamp, the chip clamp is installed in the detection cavity and is used to fix the chip substrate to be tested; The impedance tester is electrically connected to four sets of test chip probes mounted on the chip fixture. The four sets of test chip probes are connected to electrodes on the chip substrate. The impedance tester is used to obtain the impedance spectrum sequence. The AC / DC electrical parameter tester is electrically connected to the probe matrix installed on the top of the detection isolation cover. The bottom end of the probe matrix contacts the pads on the chip substrate. The AC / DC electrical parameter tester is used to acquire the electrical performance matrix sequence of the pads. The probe matrix is ​​equipped with multiple sets of displacement sensors for acquiring vertical displacement feedback data. The detection ends of the multiple sets of displacement sensors are respectively facing the multiple sets of detection probes in the probe matrix. The control module is installed on one side of the detection housing and is used to obtain a comprehensive evaluation report of the substrate performance and transmit it to the display terminal. The equipment cavity is equipped with an ultrasonic humidifier for outputting corrosive gas. A connector connected to the heating cavity is provided on one side of the heating isolation cover. The air outlet of the ultrasonic humidifier is connected to the connector through a pipeline. A heating module for heating the corrosive gas in the heating cavity is provided around the heating isolation cover. A gas sensor for detecting the concentration of corrosive gas is provided in the detection cavity. A temperature sensor is also provided in the detection cavity. The detection chamber is equipped with a pressure sensor. The top of the partition plate has two sets of reflux holes corresponding to the detection chamber. Each set of reflux holes has a horn-shaped gas gathering hood at the top and a filter screen inside. Each set of reflux holes has an electromagnetic regulating valve at the bottom. The two sets of electromagnetic regulating valves are connected to one end of the reflux pipe through a three-way pipe. The ultrasonic humidifier has a reflux check valve at the reflux end. The other end of the reflux pipe is connected to the reflux check valve. A diaphragm vacuum pump is installed on the reflux pipe, and a heat insulation layer is installed around the reflux pipe.

2. The chip substrate performance testing device according to claim 1, characterized in that: The chip fixture includes a fixture mounting block mounted on top of the partition plate. The detection isolation cover includes a detection partition plate. The fixture mounting block is provided with a detection partition plate around its periphery. A detection housing is provided on one side of the detection partition plate. A pull housing for opening and closing the detection isolation cover is provided on the side of the detection housing away from the detection partition plate. A detection cavity is formed between the detection partition plate, the detection housing, and the pull housing. The bottom of the heating isolation cover is provided with a lifting frame for moving four sets of bearing closed columns to the bearing position in the detection cavity or the ventilation position in the heating cavity. Four sets of vent holes are opened on the partition plate. Four sets of through holes are opened at the bottom of the heating isolation cover. A first sealing sleeve is provided in each of the four sets of vent holes and through holes. When the lifting frame is in the bearing position, the tops of the four sets of bearing closed columns pass through the four sets of through holes and vent holes respectively and contact the bottom of the chip substrate. The detection chamber and the heating chamber are not connected. When the lifting frame is in the ventilation position, the four sets of load-bearing closed columns are respectively installed in the four sets of through holes, and the detection chamber and the heating chamber are connected through the four sets of air outlet holes.

3. The chip substrate performance testing device according to claim 2, characterized in that: Both sides of the pull housing are provided with sliding blocks, and each set of sliding blocks is provided with a sliding groove. The limiting posts on both sides of the detection housing are respectively inserted into the two sets of sliding grooves. Both sides of the detection housing are also provided with limiting strips, and the two sets of limiting strips are slidably connected to the top of the two sets of sliding blocks respectively. Two sets of through slots are provided on the partition plate. A rotating seat is provided on one side of each set of through slots. A linkage gear is provided on the rotating seat. A drive rack is provided at the bottom of the sliding block. The two sides of the lifting frame are connected to the two sets of lifting racks through two sets of connecting frames respectively. One side of the linkage gear meshes with the lifting rack, and the top meshes with the drive rack. When the housing is pulled to the open position to open the detection isolation cover, the lifting frame moves to the bearing position; When the housing is pulled to the closed position to close the detection isolation cover, the lifting frame moves to the ventilation position.

4. The chip substrate performance testing device according to claim 2, characterized in that: Two sets of sliding channels are provided on one side of the fixture mounting block. Two sets of symmetrical sliding racks are provided in the two sets of sliding channels. A limiting plate is also provided on one side of the fixture mounting block corresponding to the two sets of sliding channels. A clamping block for clamping the chip substrate is provided on one side of the two sets of sliding racks. A transmission hole is provided between the two sets of sliding channels. A clamping gear is provided at one end of the transmission hole. The top and bottom of the clamping gear mesh with the two sets of sliding racks respectively. One end of the transmission shaft is connected to the clamping gear, and the other end is connected to the output shaft of the clamping servo motor. A second sealing sleeve is provided at the other end of the transmission hole. The second sealing sleeve is fitted around the transmission shaft. A mounting bracket is provided on the side of the fixture mounting block away from the detection cavity. The clamping servo motor is mounted on one side of the mounting bracket. Two sets of bearings are provided on the mounting bracket, and the transmission shaft passes through the two sets of bearings.

5. The chip substrate performance testing device according to claim 4, characterized in that: Two sets of sliding holes are provided on each of the two sets of clamping blocks. One end of each of the four sets of test chip probes passes through one of the four sets of sliding holes. A protective shell is provided at one end of the sliding hole, and the other end of the test chip probe passes through the protective shell. There are take-up reels on both sides of the test shell. Corrosion-resistant connecting wires are wound on the take-up reels. One end of the corrosion-resistant connecting wire passes through a through hole on one side of the protective shell and connects to the test chip probe. A connecting socket is provided on one side of the take-up reel. The corrosion-resistant connecting wire is electrically connected to the connecting socket. A third sealing sleeve is provided in the through hole. A first spring is provided in the protective shell. One end of the first spring contacts the test chip probe. The winding force of the take-up reel is greater than the minimum elastic force of the first spring. An impedance tester is provided in the placement cavity. The impedance tester is connected to the two sets of connecting sockets through wires.

6. The chip substrate performance testing device according to claim 2, characterized in that: The probe matrix includes multiple sets of probes. Multiple sets of mounting cylinders are provided inside the detection isolation cover. The bottom ends of the multiple sets of detection probes are respectively inserted into the multiple sets of mounting cylinders. A mounting bracket is installed on the top of the detection isolation cover. Multiple sets of grooves are opened at the bottom of the mounting brackets corresponding to the multiple sets of detection probes. Multiple sets of second springs are respectively provided between the multiple sets of grooves and the multiple sets of detection probes. The multiple sets of second springs contact the top ends of the multiple sets of detection probes respectively. The top of the mounting bracket has multiple sets of mounting holes, each containing a displacement sensor. Each set of detection probes has a sensing protrusion on one side, with the displacement sensors facing the protrusions. The top of the mounting bracket has a data connector, with pinhole sockets on both sides. The displacement sensors and probe matrix are connected to the two sets of pinhole sockets via wires and two sets of pinhole plugs. The data connector is electrically connected to an AC / DC power parameter tester installed in the placement cavity.

7. A testing method for a chip substrate performance testing apparatus, applied to the chip substrate performance testing apparatus according to any one of claims 1 to 6, characterized in that, include: Impedance spectrum sequence is obtained based on test chip probe, pad electrical performance matrix sequence is obtained based on AC / DC electrical parameter tester, and topography point cloud sequence is obtained based on displacement sensor. The environmental chamber is dynamically controlled based on a preset corrosive gas concentration and temperature curve to obtain logs of environmental parameters. Degradation feature vector set is obtained based on impedance spectrum sequence, pad electrical performance matrix sequence, topography point cloud sequence and detection environment parameter log. A comprehensive evaluation report of substrate performance is obtained based on the degradation feature vector set and transmitted to the display terminal.

8. The detection method of the chip substrate performance testing device according to claim 7, characterized in that, Impedance spectrum sequences were obtained based on a test chip probe; pad electrical performance matrix sequences were obtained based on an AC / DC electrical parameter tester; and topographic point cloud sequences were obtained based on a displacement sensor, including: The impedance tester injects AC test signals into the electrodes at both ends of the chip substrate through two sets of test chip probes, and simultaneously measures the phase difference and amplitude response of voltage and current to obtain the impedance spectrum sequence. Each probe in the probe matrix corresponds to a pad on the substrate. The AC / DC power parameter tester sends a row selection signal to the probe matrix to select all probes in the first row of the probe matrix. The probes in the current row are activated sequentially according to the column order to apply micro-current to the pads on the chip substrate. The conduction resistance between the pads and the leakage current to ground are measured. After the first row scan is completed, the system jumps to the second row to repeat the column scan until all rows are scanned to obtain the pad electrical performance matrix sequence. The Z-axis displacement of each probe in the probe matrix is ​​obtained in real time based on the displacement sensor. A substrate mesh is generated based on the top surface of the chip substrate. Multiple substrate mesh nodes are obtained by mapping the X and Y coordinates of each probe to the substrate mesh. A height value is assigned to each substrate mesh node based on the initial Z-axis coordinate and Z-axis displacement value of the probe. Each substrate mesh node is stored as a topographic point cloud sequence in (X,Y,Z) format.

9. The detection method of the chip substrate performance testing device according to claim 7, characterized in that, A degradation feature vector set is obtained based on impedance spectrum sequences, pad electrical performance matrix sequences, topographic point cloud sequences, and detection environment parameter logs. A comprehensive substrate performance evaluation report is then generated based on this degradation feature vector set and transmitted to the display terminal, including: The amplitude attenuation rate of characteristic frequency points is extracted from the impedance spectrum sequence as a material degradation index; the weld failure ratio and average resistance change rate are extracted from the electrical performance matrix sequence as electrical degradation index; and the surface curvature change is fitted from the topography point cloud sequence as a mechanical deformation index. Based on the detection environment parameter logs, the highest temperature value and the exposure time of corrosive gases are extracted. The material degradation index, electrical degradation index, and mechanical deformation index are correlated with the highest temperature value and the exposure time of corrosive gases to obtain the correlated stress data. Based on the material degradation index, electrical degradation index, mechanical deformation index and the correlated stress data, a degradation feature vector set is constructed. The degradation feature vector set is input into the pre-trained random forest classification model. The random forest classification model outputs the corrosion resistance level classification result and confidence score according to the preset grading rules. The thermal deformation index in the range of [0, 100] is obtained based on the mechanical deformation index, and the position coordinates of the failed pads on the chip substrate are marked. A comprehensive evaluation report on substrate performance is generated based on corrosion resistance level, thermal deformation index, and the location coordinates of failed solder pads, and then transmitted to the display terminal.

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