Perovskite thin film annealing method and annealing device, and solar cell

Abstract

The invention discloses a perovskite thin film annealing method, an annealing device and a solar cell, and relates to the technical field of perovskite solar cells. The perovskite thin film annealing device comprises a light source; the light source is used for emitting a specific light beam for heating a silicon substrate of the annealing sample, the annealing sample further comprises a perovskite precursor liquid film formed on the silicon substrate, the temperature of the silicon substrate is raised under the radiation of the specific light beam, and the perovskite precursor liquid film is heated, so that the perovskite precursor liquid film is crystallized from one side close to the silicon substrate to one side far away from the silicon substrate. According to the perovskite thin film annealing device, the silicon substrate is used as a heating source to heat and anneal the perovskite precursor liquid film, so that the crystallization quality of the perovskite precursor liquid film can be improved, and the efficiency and the stability of a battery are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular to a perovskite thin film annealing method and annealing device, and a solar cell. Background Art

[0002] Perovskite solar cells, also known as new-concept solar cells, are third-generation solar cells that utilize perovskite-type organic metal halide semiconductors as light-absorbing materials. As an emerging field in solar cell technology, perovskite solar cells, characterized by high efficiency, low cost, and a wide range of applications, have become a research focus in the global photovoltaic field.

[0003] Among them, perovskite films need to undergo a thermal annealing process after preparation, which can promote better crystallization of the grains and improve the optoelectronic properties of the film. At present, there are three common annealing processes: the first is hot plate heating annealing, but the equipment cost of this annealing method is high, making it difficult to achieve low-cost and high-speed mass production; the second is oven heating annealing. Although this method can anneal a large number of samples simultaneously, its heating efficiency is low and the crystallization quality is not high, resulting in low battery efficiency and poor stability; the third is quartz tube mid-infrared heating annealing. This method has high heating efficiency and fast heating, but it also has the problem of low battery efficiency and poor stability. Therefore, how to provide a new perovskite film annealing method to improve battery efficiency and stability is a technical problem that needs to be solved urgently. Summary of the Invention

[0004] The object of the present invention is to provide a perovskite thin film annealing method and annealing device, which can use a silicon substrate as a heat source to heat and anneal a perovskite precursor liquid film, so that the perovskite precursor liquid film crystallizes from the side close to the silicon substrate to the side away from the silicon substrate, thereby improving the crystallization quality of the perovskite precursor liquid film and improving the battery efficiency and stability.

[0005] The embodiment of the present invention is achieved as follows:

[0006] In one aspect, the present invention provides a perovskite thin film annealing device, comprising a light source configured to emit a specific light beam for heating a silicon substrate of an annealed sample. The annealed sample also includes a perovskite precursor liquid film formed on the silicon substrate. The silicon substrate heats up under the radiation of the specific light beam, heating the perovskite precursor liquid film so that the perovskite precursor liquid film crystallizes from a side proximal to a side distal to the silicon substrate. The perovskite thin film annealing device utilizes the silicon substrate as a heat source to heat and anneal the perovskite precursor liquid film, enabling the perovskite precursor liquid film to crystallize from bottom to top, thereby improving the crystallization quality of the perovskite precursor liquid film and enhancing the efficiency and stability of the battery.

[0007] Optionally, the light source is located on the side of the silicon substrate coated with the perovskite precursor liquid film, and the wavelength of the specific light beam is between 850nm and 900nm; and / or, the light source is located on the side of the silicon substrate not coated with the perovskite precursor liquid film, and the wavelength of the specific light beam is between 400nm and 900nm.

[0008] Optionally, the perovskite thin film annealing device further includes a fly-eye lens disposed between the light source and the silicon substrate, and the fly-eye lens is used to homogenize and constrain the light beam emitted by the light source.

[0009] Optionally, the perovskite thin film annealing device also includes a temperature sensor and a controller; the probe of the temperature sensor is arranged on the side of the silicon substrate away from the light source, for detecting the temperature of the silicon substrate and sending it to the controller; the controller is used to control the output power of the light source according to the temperature of the silicon substrate.

[0010] Optionally, the perovskite thin film annealing device also includes: a chamber for accommodating the above-mentioned annealing sample, and a first pipe connected to the chamber; the first pipe is used to fill the chamber with a gas containing at least one perovskite solvent in the initial stage of annealing, so that the surface of the perovskite precursor liquid film remains wet in the initial stage; optionally, the cavity wall of the chamber is also provided with a plurality of air outlet holes in the area facing the annealing sample, and the plurality of air outlet holes are connected to the first pipe.

[0011] Optionally, a cooling pipe is provided in the chamber wall for cooling the chamber before annealing.

[0012] Optionally, the first pipeline is further provided with a first switch for controlling whether the first pipeline is turned on. The first switch is used to turn on the first pipeline in the initial stage of annealing and turn off the first pipeline in the subsequent annealing stage after the initial stage under the control of the controller.

[0013] Optionally, the perovskite thin film annealing device further includes: a second pipe having one end connected to the chamber, and a second switch arranged on the second pipe; the second pipe is used to fill nitrogen or dry air into the chamber in a subsequent annealing stage after the initial stage.

[0014] In other embodiments, the first pipeline may also be connected to a nitrogen or dry air source for filling nitrogen or dry air into the chamber in a subsequent annealing stage after the initial stage, and the first switch is a two-input and one-output switch valve.

[0015] Optionally, the perovskite thin film annealing device further includes: a third pipe having one end connected to the chamber and a first solenoid valve connected to the third pipe; the third pipe is used to discharge the gas in the chamber.

[0016] Optionally, the perovskite thin film annealing device further comprises a fourth pipeline, a vacuum pump and a second electromagnetic valve; one end of the fourth pipeline is in communication with the chamber, and the other end is in communication with the vacuum pump; the second electromagnetic valve is connected to the fourth pipeline; the vacuum pump is used to vacuum the chamber through the fourth pipeline.

[0017] Optionally, the perovskite thin film annealing device further comprises: a first chamber for initial annealing of the annealing sample, and a second chamber for subsequent annealing of the annealing sample; the first chamber is provided with a first pipeline in communication with the first chamber, and the first pipeline is used to fill a gas containing at least one perovskite solvent into the chamber in the initial stage of annealing, so as to keep the perovskite precursor liquid film surface wet; a cooling pipeline is arranged in the chamber wall of the first chamber, and is used to cool the first chamber before annealing; the second chamber is provided with a second pipeline having one end in communication with the second chamber; the second pipeline is used to fill a gas not containing perovskite solvent into the second chamber in the subsequent annealing stage after the initial stage; the second chamber is further provided with a fourth pipeline, one end of the fourth pipeline is in communication with the second chamber, and the other end is in communication with a vacuum pump; the vacuum pump is used to vacuum the second chamber through the fourth pipeline.

[0018] Another aspect of the present application also provides a perovskite thin film annealing method, which comprises: radiating and heating the annealing sample by using a specific light beam, so that the silicon substrate of the annealing sample is warmed up earlier than the perovskite precursor liquid film, and the perovskite precursor liquid film is crystallized from the side close to the silicon substrate to the side away from the silicon substrate, wherein the perovskite precursor liquid film is formed on the silicon substrate.

[0019] Optionally, when the specific light beam irradiates the annealing sample from the side of the silicon substrate coated with the perovskite precursor liquid film, the wavelength of the specific light beam is between 850 nm and 900 nm; and / or, when the specific light beam irradiates the annealing sample from the side of the silicon substrate not coated with the perovskite precursor liquid film, the wavelength of the specific light beam is between 400 nm and 900 nm.

[0020] Optionally, in the initial stage of annealing, the specific light beam is used to radiate and heat the annealing sample while keeping the perovskite precursor liquid film surface wet.

[0021] Optionally, in the initial stage of annealing, the chamber of the annealing device is filled with a gas containing at least one perovskite solvent, so as to keep the perovskite precursor liquid film surface wet; in the subsequent annealing stage after the initial stage, no gas is filled into the chamber of the annealing device, or a gas not containing perovskite solvent is filled into the chamber of the annealing device.

[0022] Optionally, the perovskite thin film annealing method further comprises: cooling the chamber by using a cooling pipeline arranged in the chamber wall of the annealing device chamber before annealing and in the initial stage of annealing, so as to keep the perovskite precursor liquid film surface wet in the initial stage of annealing.

[0023] Optionally, in the initial stage, the annealing temperature is between 60° C. and 200° C., and the annealing time is between 20 and 60 seconds; in the subsequent annealing stage, the annealing temperature is between 60° C. and 200° C., and the annealing time is between 8 and 20 minutes.

[0024] The beneficial effects of the present invention include at least:

[0025] The perovskite thin film annealing device and annealing method provided in the present application utilize a silicon substrate to absorb a specific light beam to heat and anneal a sample. The silicon substrate first heats up under the radiation of the specific light beam, and then transfers the heat to the perovskite precursor liquid film thereon. That is, the perovskite thin film annealing device of the present application can utilize the silicon substrate as a heat source to heat and anneal the perovskite precursor liquid film, thereby allowing the perovskite to crystallize from the side close to the silicon substrate to the side away from the silicon substrate, thereby improving the crystallization quality of the perovskite precursor liquid film and improving the battery efficiency and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 This is a schematic diagram of the structure of a perovskite thin film annealing device according to an embodiment of the present invention;

[0028] Figure 2 This is the second structural diagram of the perovskite thin film annealing device according to an embodiment of the present invention;

[0029] Figure 3 One of the scanning electron microscope (SEM) cross-sectional images of the perovskite film obtained by hot stage annealing;

[0030] Figure 4 The second scanning electron microscope (SEM) cross-sectional image of the perovskite film obtained by hot stage annealing;

[0031] Figure 5 One of the scanning electron microscope (SEM) cross-sectional images of a perovskite film obtained by annealing using the annealing method or annealing device of the present application;

[0032] Figure 6 The second scanning electron microscope (SEM) cross-sectional view of a perovskite film obtained by annealing using the annealing method or annealing device of the present application;

[0033] Figure 7The third scanning electron microscope (SEM) cross-sectional view of a perovskite film obtained by annealing using the annealing method or annealing device of the present application;

[0034] Figure 8 One of the flow diagrams of the perovskite film annealing method provided;

[0035] Figure 9 The second flow chart of the perovskite film annealing method provided.

[0036] Icons: 10-light source; 20-silicon substrate; 30-fly-eye lens; 40-temperature sensor; 60-chamber; 62-cooling pipe; 71-first pipe; 711-first switch; 72-second pipe; 721-second switch; 73-third pipe; 731-first solenoid valve; 74-fourth pipe; 741-second solenoid valve; 80-vacuum pump; 90-carrier. DETAILED DESCRIPTION

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0038] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0039] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0040] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the inventive product is typically placed when in use. These terms are intended solely to facilitate and simplify the description of the present invention and are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third," etc., are used solely for distinction and should not be construed as indicating or implying relative importance.

[0041] It should also be noted that, in the description of the present invention, unless otherwise expressly specified or limited, the terms "disposed" and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections, indirect connections through an intermediate medium, or internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0042] First embodiment

[0043] Please refer to Figure 1 and Figure 2 This embodiment provides a perovskite thin film annealing device, comprising a light source 10 configured to emit a specific light beam for heating a silicon substrate 20 serving as an annealing sample. The annealing sample also includes a perovskite precursor liquid film formed on the silicon substrate 20. The specific light beam heats the silicon substrate 20, thereby heating the perovskite precursor liquid film, causing the perovskite precursor liquid film to crystallize from a side proximal to the silicon substrate 20 toward a side distal to the silicon substrate 20. The perovskite thin film annealing device utilizes the silicon substrate 20 as a heat source to heat and anneal the perovskite precursor liquid film, promoting bottom-up crystallization of the perovskite precursor liquid film, thereby improving the crystallization quality of the perovskite precursor liquid film and enhancing battery efficiency and stability.

[0044] The perovskite thin film annealing apparatus provided herein includes a light source 10, which is used to emit a specific light beam, the wavelength of which is designed specifically for the silicon substrate 20, to heat the silicon substrate 20 of the annealed sample. The silicon substrate 20 absorbs the specific light beam and heats up. The annealed sample may, for example, include a semi-finished crystalline silicon perovskite tandem cell, and the silicon substrate 20 may, for example, be a crystalline silicon subcell.

[0045] The specific light beam emitted by light source 10 irradiates silicon substrate 20, which absorbs the specific light beam and heats up. Simultaneously, the perovskite precursor liquid film heats up due to heat conduction from silicon substrate 20, causing heat to transfer from the lower surface to the upper surface of the perovskite precursor liquid film, leading to nucleation and crystallization of the perovskite precursor liquid film.

[0046] It should be noted that the upper surface of the perovskite precursor liquid film is away from the silicon substrate 20, while the lower surface is close to the silicon substrate 20. The lower surface of the perovskite precursor liquid film has a higher temperature and nucleates first. In other words, the bottom-up crystallization of the perovskite precursor liquid film in this application refers to promoting nucleation and crystallization on the side of the perovskite precursor liquid film close to the silicon substrate 20 (buried bottom interface) first, and then growing crystals from the bottom up.

[0047] In this embodiment, the wavelength range of the specific light beam emitted by the above-mentioned light source 10 needs to be determined according to the position of the light source 10 relative to the perovskite precursor liquid film, so it is not specifically limited. For example, when the light source 10 is located on the side of the silicon substrate 20 coated with the perovskite precursor liquid film, that is, the light source 10 is located above the perovskite precursor liquid film (at this time, the perovskite precursor liquid film is located between the light source 10 and the silicon substrate 20), the specific light beam emitted by the light source 10 needs to pass through the perovskite precursor liquid film to reach the silicon substrate 20. The light source 10 can use a specific light beam that is absorbed by the silicon substrate 20 but is not absorbed or absorbs very little by the perovskite precursor liquid, such as a near-infrared light beam. In a more specific embodiment, the wavelength of the specific light beam can be between 850nm and 900nm, without specific limitation. When the light source 10 is located on the side of the silicon substrate 20 that is not coated with the perovskite precursor liquid film, that is, the light source 10 and the perovskite precursor liquid film are respectively located on both sides of the silicon substrate 20, and the light source 10 irradiates from the back of the silicon substrate 20, the light source 10 can use visible light or infrared light. At this time, there is no need to consider the absorption of the specific light beam by the perovskite precursor liquid. The wavelength of the specific light beam can be between 400nm and 900nm.

[0048] For example, in some embodiments, the light source 10 is located on the side of the silicon substrate 20 coated with the perovskite precursor liquid film, that is, the perovskite precursor liquid film and the light source 10 are located on the same side of the silicon substrate 20, such as Figure 1 As shown. Optionally, the light source 10 may be an LED or a laser diode. The specific light beam emitted by the light source 10 is near-infrared light, and the wavelength of the specific light beam may be between 850nm and 900nm. For example, the light beam emitted by the light source 10 may be 850nm, 870nm, or 900nm.

[0049] In this case (i.e., the light source 10 radiatively heats the silicon substrate 20 from above the perovskite precursor liquid film), the present application uses a specific light beam with a wavelength between 850nm and 900nm to radiatively heat the silicon substrate 20. The perovskite precursor liquid film does not absorb these specific light beams, but the silicon substrate 20 can absorb them. Therefore, when the light source 10 irradiates, the perovskite precursor liquid film does not absorb or absorbs very little of the specific light beam, but the silicon substrate 20 will heat up due to absorbing the energy of the specific light beam, thereby achieving the heating of the perovskite precursor liquid film from the bottom up through the heat conduction effect of the silicon substrate 20. In this way, the perovskite precursor liquid film has good nucleation and crystallization effects and better stability during the annealing process, thereby improving the efficiency of the battery.

[0050] At this time, the wavelength of the specific light beam emitted by the light source 10 of the present application is preferably between 850nm and 900nm. In this way, it can be ensured that the specific light beam is absorbed by the silicon substrate 20 and will not be absorbed by the perovskite precursor liquid film. Light beams less than 850nm may be absorbed by the perovskite precursor liquid film, and light beams greater than 900nm may partially penetrate the silicon substrate 20, which will reduce the absorption efficiency of the silicon substrate 20. The specific light beam of 850nm to 900nm of the present application can radiate and heat the silicon substrate 20 but not the perovskite precursor liquid film, which can ensure that the upper surface of the perovskite precursor liquid film will not dry out first due to heating.

[0051] In addition, the annealing device of the present application sets the light source 10 above the annealing sample, and the specific light beam passes through the perovskite precursor liquid film to heat the silicon substrate 20, rather than directly heating the perovskite precursor liquid film. In addition to controlling the crystallization of perovskite, the reason is also to better connect with the previous coating process. The perovskite precursor liquid film is formed by coating by the coating equipment. In the coating process, the surface of the cell to be coated faces up, and is lifted from the bottom of the silicon substrate 20 by a tray (or other transmission equipment such as a manipulator, etc.) and sent to the operating position of the coating equipment. After the coating head (or liquid outlet) of the coating equipment forms the perovskite precursor liquid film on the cell, it can be lifted from the bottom of the silicon substrate 20 again by the tray and sent to the annealing equipment. Therefore, by setting the light source above (the side of the silicon substrate coated with the perovskite precursor liquid film), space can be left below the cell (silicon substrate) for the operation of the tray or other transmission equipment, which facilitates the operation connection between the coating process and the annealing process.

[0052] For example, in some embodiments, the light source 10 is located on the side of the silicon substrate 20 that is not coated with the perovskite precursor liquid film, that is, the perovskite precursor liquid film and the light source 10 are located on both sides of the silicon substrate 20, such as Figure 2 As shown. Optionally, the light source 10 may be a monochromatic LED, a laser diode, or a composite white light source 10; the specific light beam emitted by the light source 10 is visible light or infrared light. The wavelength of the specific light beam may be between 400 nm and 900 nm. For example, the central wavelength of the light beam emitted by the light source 10 may be 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, or 900 nm.

[0053] In this case (i.e., the light source 10 radiates heat to the silicon substrate 20 from the back of the cell), the present application can use a specific light beam with a wavelength between 430nm and 900nm to radiate heat to the silicon substrate 20. In this way, the light beam is selected so as not to penetrate the silicon substrate 20, and this wavelength range will not damage the heterogeneous crystalline silicon cell. The radiation heats the silicon substrate 20 but does not heat the perovskite precursor liquid film. In this way, it can also be ensured that the upper surface of the perovskite precursor liquid film does not dry out first due to heating, resulting in top-down crystallization. The present application achieves bottom-up heating of the perovskite precursor liquid film through the heat conduction effect of the silicon substrate 20. In this way, the perovskite precursor liquid film has a good nucleation and crystallization effect and better stability during the annealing process, thereby improving the efficiency of the cell.

[0054] At this time, the present application prefers that the wavelength of the light beam emitted by the light source 10 is between 430nm and 900nm. In this way, it can be ensured that the light beam is absorbed by the silicon substrate 20 but does not pass through the silicon substrate 20. In this way, the light beam will not be absorbed by the perovskite precursor liquid film (a light beam greater than 900nm will partially pass through the silicon substrate 20, thereby making the absorption efficiency of the silicon substrate 20 low; and a light beam below 430nm will damage the passivation film layer of the silicon substrate 20). Radiative heating of the silicon substrate 20 but not the perovskite precursor liquid film can ensure that the upper surface of the perovskite precursor liquid film will not dry out first due to heating, resulting in top-down crystallization.

[0055] Illustratively, in other embodiments, the light source 10 may also include two groups, wherein one group of light sources 10 is located on the side of the silicon substrate 20 coated with the perovskite precursor liquid film, and the wavelength of the specific light beam emitted by this group of light sources is between 850nm and 900nm; the other group of light sources 10 is located on the side of the silicon substrate 20 not coated with the perovskite precursor liquid film, and the wavelength of the specific light beam emitted by this group of light sources is between 430nm and 900nm.

[0056] In short, the annealing equipment in this embodiment is the above Figure 1 Shown above is radiant heating and Figure 2 As shown in the figure, the light source 10 is located on the side of the silicon substrate 20 coated with the perovskite precursor liquid film. Figure 1 The same situation is shown, the light source 10 is located on the side of the silicon substrate 20 that is not coated with the perovskite precursor liquid film. Figure 2 The situations shown are the same, and this application will not go into details. For the same places, please refer to the above description.

[0057] In this embodiment, it should be noted that the lower surface of the perovskite precursor liquid film mentioned in this article refers to the side that is in contact with the silicon substrate 20, also known as the buried bottom interface, and the upper surface refers to the side of the perovskite precursor liquid film away from the silicon substrate 20, opposite to the buried bottom interface.

[0058] Alternatively, the thickness of the silicon substrate 20 provided herein can be between 90 μm and 150 μm. Since the silicon substrate 20 is very thin, the energy required for heating is relatively small. According to calculations, a 5 kW infrared LED can heat a silicon wafer (210 x 210 mm) to 120°C in 2 seconds. Therefore, the perovskite thin film annealing device of the present invention has a high heating efficiency, which can improve annealing efficiency.

[0059] In summary, the perovskite thin film annealing device provided in this application uses light radiation heating, which has better uniformity and higher efficiency than other annealing methods. In addition, the perovskite thin film annealing device provided in this application uses a specific light beam radiation heating annealing sample on the silicon substrate, and then anneals the perovskite precursor liquid film. This can promote the perovskite precursor liquid film to first reach nucleation conditions at the buried interface, promoting the perovskite precursor liquid film to achieve bottom-up crystallization.

[0060] This case innovatively utilizes the silicon substrate 20 as a heat source to heat and anneal the perovskite precursor liquid film, thereby improving the perovskite crystal quality and improving the battery efficiency and stability.

[0061] like Figure 3-Figure 7 The following is a comparison of top-down and bottom-up perovskite crystallization. In SEM images, if the lower portion of the SEM cross-section shows neat crystals, while the upper portion has small fragments, it is generally considered by those skilled in the art to be bottom-up crystallization. Figure 3 and Figure 4 This is an SEM cross-sectional image of top-down crystallized perovskite obtained by hot stage annealing. Figure 5 、 Figure 6 and Figure 7 This is a bottom-up crystallization SEM cross-sectional image obtained by using the annealing method or annealing device described in this application.

[0062] Figure 3 Shown is crystallization from top to bottom, with broken crystals on the lower surface.

[0063] Figure 4 The figure shows crystallization from top to bottom, and the perovskite solvent is not completely evaporated, with a large number of gaps underneath.

[0064] Figure 5 It shows crystallization from bottom to top, but the aging time is insufficient and there are broken crystals on the upper surface.

[0065] Figure 6 It shows crystallization from bottom to top, but the aging time is insufficient and there are broken crystals on the upper surface.

[0066] Figure 7 The crystallization is from bottom to top, with good crystallization control, no broken crystals, and the grain boundaries running through from top to bottom.

[0067] The aging time mentioned above refers to the stage during the heating and annealing process when the solvent is evaporating but not completely. During this stage, small grains will aggregate into large grains.

[0068] In addition, it should be noted that the light source 10 may be one or more. When there are multiple light sources 10, the multiple light sources 10 may be evenly distributed on one side of the silicon substrate 20. In this way, the uniformity of the radiation heating of the silicon substrate 20 by the light beam can be improved.

[0069] Optionally, in order to further improve the uniformity of the light beam when it is irradiated on the silicon substrate 20, in this embodiment, the perovskite thin film annealing device also includes a fly-eye lens 30 arranged between the light source 10 and the silicon substrate 20. The fly-eye lens 30 is used to homogenize and constrain the light beam emitted by the light source 10 so as to achieve a uniform light spot within a specific area.

[0070] It should be noted that the main function of the fly-eye lens 30 is to achieve light beam homogenization and confinement, so that the light beam emitted by the light source 10 can be emitted evenly after passing through the fly-eye lens 30, and the emitted light beam can illuminate the silicon substrate 20 within a specific area.

[0071] It is worth noting that if the silicon substrate 20 is fixed in the perovskite thin film annealing device during the annealing process, then the above-mentioned specific area can be roughly the same as the area of ​​the annealing sample, ensuring that the perovskite precursor liquid film of the annealing sample is uniformly irradiated by the specific light beam; if the silicon substrate 20 is movable relative to the light source of the perovskite thin film annealing device, then the above-mentioned specific area can be smaller than the area of ​​the annealing sample. Through the relative movement of the annealing sample and the light source, it can be ensured that the specific light beam uniformly emitted by the light source through the fly-eye lens 30 can scan the entire perovskite precursor liquid film.

[0072] The perovskite thin film annealing device may also include a temperature sensor 40 and a controller; the probe of the temperature sensor 40 is arranged on the side of the silicon substrate 20 away from the light source 10, for detecting the temperature of the silicon substrate 20 and sending it to the controller; the controller is used to control the output power of the light source 10 according to the temperature of the silicon substrate 20.

[0073] In this embodiment, the temperature sensor 40 may be a non-contact infrared temperature sensor 40 , so that temperature measurement can be achieved without contact.

[0074] The annealing device of the present application is provided with a temperature sensor 40 and a controller, so that the temperature sensor 40 can detect the temperature of the silicon substrate 20 in real time and feed back to the controller, and the controller can adjust the output power of the light source 10 according to the feedback information of the temperature sensor 40, so that the temperature of the silicon substrate 20 is kept constant at the ideal annealing temperature. Exemplarily, the ideal annealing temperature is between 60°C and 200°C, and further preferably, the annealing temperature is between 100°C and 180°C.

[0075] In another embodiment of the present application, referring to FIGS. 1 and 2, Figure 1 and Figure 2 The perovskite film annealing device includes a chamber 60 for accommodating the above-mentioned annealing sample and a first pipeline 71 communicating with the chamber 60; the chamber is further provided with the above-mentioned light source 10 and temperature sensor 40, and the controller can be arranged outside the chamber 60. The first pipeline 71 is used to fill the chamber 60 with a gas containing at least one perovskite solvent in the initial stage of annealing, so as to keep the perovskite precursor liquid film surface wet.

[0076] The above-mentioned keeping the perovskite precursor liquid film surface wet means that the side (upper surface) of the perovskite precursor liquid film away from the silicon substrate 20 keeps liquid state and does not crystallize. The wet state can be achieved by spraying a wetting gas containing a perovskite solvent, or by other means such as covering a wetting object containing a perovskite solvent, or by arranging a wetting object very close to the liquid film, and the present application does not make specific limitation on how to keep the perovskite precursor liquid film surface wet. The wetting gas (or wetting object) herein refers to a gas (or object) containing at least one perovskite solvent, which can hinder the evaporation of the solvent in the perovskite precursor liquid film, so that the perovskite precursor liquid film does not dry quickly. Exemplarily, the chamber of the annealing device can be filled with a wetting gas containing a perovskite solvent, such as saturated steam DMF.

[0077] The gas filled into the chamber 60 through the first pipeline 71 in the initial stage of annealing can contain one or more perovskite solvents, and the content of perovskite solvent in the filled gas and the gas pressure in the chamber 60 are adjusted to hinder the evaporation of the perovskite solvent, so that the perovskite precursor liquid film surface keeps wet and does not crystallize. Exemplarily, under the control of the controller, nitrogen containing DMF (N,N-dimethylformamide) is filled into the chamber 60 through the first pipeline 71 in the initial stage of annealing. Optionally, the gas pressure in the chamber 60 is 1-3 Pa. The content of organic solvent (such as DMF) in the nitrogen is 100 ppm.

[0078] Optionally, a plurality of gas outlets may be provided in the area of ​​the chamber wall facing the annealed sample, and the plurality of gas outlets may be connected to the first pipe. This facilitates the uniform sinking of the gas containing the perovskite solvent onto the surface of the perovskite precursor liquid film, maintaining the surface wetness of the perovskite precursor liquid film and preventing the upper surface of the liquid film from reaching crystallization conditions first due to evaporation of the perovskite solvent, thereby preventing crystallization from proceeding from top to bottom.

[0079] It should be noted that the perovskite precursor liquid film only maintains surface moisture during the initial stage to prevent the upper surface of the perovskite precursor liquid film (the side facing away from the silicon substrate 20) from drying out. The perovskite solvent in the gas may be in a vaporized state or in a tiny droplet state, which is not specifically limited in this application. During this initial stage, the silicon substrate is also heated to promote the formation of tiny crystal nuclei at the interface (buried interface) between the liquid film and the silicon substrate.

[0080] In this embodiment, the light source 10 and the silicon substrate 20 are respectively arranged in a chamber 60. Optionally, a cooling pipe 62 is provided in the wall of the chamber 60 for cooling the chamber 60 before annealing. The chamber 60 provides a closed space for annealing, which is convenient for controlling the content of the perovskite solvent in the closed space. In the context of continuous production, the chamber temperature may be very high (such as 60°C to 200°C). After the perovskite precursor liquid film enters the chamber, it will quickly become a dry film due to solvent volatilization. In this process, the solvent crystallizes from top to bottom, and the crystallization quality is not ideal. The chamber is cooled in advance by the cooling pipe in the cavity wall to ensure that the chamber temperature is basically at room temperature or lower at the beginning of annealing. Then, the silicon substrate is used to absorb the heat of the specific light beam, and then the heat is transferred to the titanium precursor liquid film attached to the silicon substrate, so that the silicon substrate interface first reaches the crystallization conditions and generates tiny crystal nuclei, thereby achieving bottom-up crystallization and improving the crystal quality. In other embodiments, the silicon substrate may further be formed with an inducing film layer that induces crystallization of the perovskite precursor liquid. For example, the surface structure of the inducing film layer may reduce the energy required for nucleation.

[0081] The cooling pipes 62 are arranged on the wall of the chamber 60. This way, the cooling pipes 62 will not affect the components inside the chamber 60 and can make the entire chamber 60 more tidy. The layout of the cooling pipes 62 is not limited in this application, and the user can set it according to the structure of the chamber 60. It is preferred that the cooling pipes 62 are evenly distributed on the wall of the chamber 60 to maintain temperature consistency throughout the chamber 60.

[0082] Optionally, the first pipe 71 is further provided with a first switch 711 for controlling whether the first pipe 71 is open or not. The first switch 711 is used to open the first pipe 71 in the initial stage of annealing and close the first pipe 71 in the subsequent annealing stage after the initial stage. The first switch 711 can be an electromagnetic valve or other suitable valve for gas pipes.

[0083] The first pipe 71 is used to fill the chamber 60 with gas containing at least one perovskite solvent. The first pipe 71 is connected to the chamber 60, and the first switch 711 is provided on the first pipe 71. In this way, in the initial stage, gas containing at least one perovskite solvent is introduced into the chamber 60 from the first pipe 71 to keep the surface of the perovskite precursor liquid film wet in the initial stage of annealing, and the liquid film is heated from the bottom while keeping the surface of the liquid film wet, which promotes the nucleation and crystallization of the bottom of the liquid film (the side close to the silicon substrate) first, and then in the subsequent annealing stage, the first pipe is closed, and gas containing perovskite solvent is no longer introduced into the chamber 60 to speed up the evaporation of the perovskite solvent, and the perovskite precursor liquid film is converted into perovskite crystals (perovskite dry film) from bottom to top.

[0084] Optionally, the perovskite thin film annealing device further comprises a second pipe 72 connected to the chamber 60 at one end and a second switch 721 connected to the second pipe 72; the second pipe 72 is used to fill the chamber 60 with nitrogen or dry air in the subsequent annealing stage after the initial stage. Perovskite is sensitive to water vapor and oxygen in the air, and annealing in a nitrogen or dry air atmosphere can improve the quality of the crystals.

[0085] It is worth noting that the chamber 60 can also be kept in a vacuum state during annealing, and dry air can be introduced into the chamber 60 through the second pipe 72 to relieve the vacuum when the perovskite thin film obtained after annealing needs to be removed. When the chamber 60 needs to be kept in an inert gas atmosphere during annealing, nitrogen can be introduced into the chamber 60 through the second pipe 72.

[0086] It is worth noting that the first switch 711 and the second switch 721 described above can be a gas flow meter or a mass flow controller. The mass flow controller (MFC) not only has the function of a mass flow meter, but more importantly, it can automatically control the flow of gas. That is, the user can set the flow as needed, and the MFC can automatically keep the flow constant at the set value, even if the system pressure fluctuates or the environmental temperature changes, it will not deviate from the set value. In short, the mass flow controller is a flow stabilizing device, which can be manually set or automatically controlled by a computer.

[0087] In order to facilitate the discharge of gas in the chamber 60 , optionally, the perovskite thin film annealing device may further include a third pipe 73 having one end connected to the chamber 60 and a first solenoid valve 731 connected to the third pipe 73 ; the third pipe 73 is used to discharge the gas in the chamber 60 .

[0088] To maintain a vacuum state in the perovskite thin film annealing apparatus, the perovskite thin film annealing apparatus optionally further includes a fourth pipe 74, a vacuum pump 80, and a second solenoid valve 741. One end of the fourth pipe 74 is connected to the chamber 60, and the other end is connected to the vacuum pump 80. The second solenoid valve 741 is connected to the fourth pipe 74. The vacuum pump 80 is used to evacuate the chamber 60 through the fourth pipe 74. In this way, by connecting one end of the fourth pipe 74 to the chamber 60 and the other end to the vacuum pump 80, the chamber 60 can be evacuated, thereby maintaining a vacuum state.

[0089] Second embodiment

[0090] In this embodiment, the perovskite thin film annealing apparatus includes: a first chamber for performing initial annealing on the annealing sample, and a second chamber for performing subsequent annealing on the annealing sample.

[0091] The first chamber is provided with a first pipe 71 in communication with the first chamber. The first pipe 71 is used to fill the first chamber with a gas containing at least one perovskite solvent at the initial stage of annealing to keep the surface of the perovskite precursor liquid film wet. A cooling pipe 62 is provided in the wall of the first chamber for cooling the first chamber before annealing.

[0092] The second chamber is provided with a second pipe 72 having one end connected to the second chamber; the second pipe 72 is used to fill the second chamber with gas that does not contain perovskite solvent in the subsequent annealing stage after the initial stage; the second chamber is also provided with a fourth pipe 74, one end of the fourth pipe 74 is connected to the second chamber, and the other end is connected to the vacuum pump 80, and the vacuum pump 80 is used to vacuum the second chamber through the fourth pipe 74.

[0093] It should be noted that this embodiment differs from the first embodiment in that the annealing apparatus of the first embodiment includes only one chamber, in which the entire annealing process is completed, while the annealing apparatus of this embodiment includes two chambers. The initial annealing phase is performed in the first chamber, and the subsequent annealing phase is performed in the second chamber. For this reason, the first conduit 71 is connected to the first chamber, and the second conduit 72 is connected to the second chamber.

[0094] Among them, the first pipeline, the second pipeline and the fourth pipeline all have the same principles as those in the first embodiment, and will not be repeated in this application.

[0095] In addition, it should be noted that the features in the first embodiment can be applied to the second embodiment as long as they do not conflict with the solutions of the second embodiment in this application. To avoid repetition, this application will not repeat the same parts as the first embodiment.

[0096] The annealing device provided in the second embodiment of the present application can always maintain a gas atmosphere of at least one perovskite solvent in the first chamber, and always maintain nitrogen or dry air, or a vacuum state in the second chamber, avoiding the switching of two gas atmospheres in one chamber, and is more suitable for large-scale mass production.

[0097] Third embodiment

[0098] Another aspect of the present invention, as Figure 8 , also provides a perovskite film annealing method, the perovskite film annealing method comprising:

[0099] S100, using a specific light beam to radiantly heat the annealed sample so that the silicon substrate 20 of the annealed sample is heated before the perovskite precursor liquid film, so that the perovskite precursor liquid film crystallizes from the side close to the silicon substrate 20 toward the side away from the silicon substrate 20, wherein the perovskite precursor liquid film is formed on the silicon substrate 20.

[0100] Among them, the silicon substrate 20 of the annealed sample is radiantly heated using a specific light beam, so that the perovskite precursor liquid film is heated and heated under the heat conduction effect of the silicon substrate 20, thereby causing the perovskite precursor liquid film to crystallize from the side close to the silicon substrate 20 toward the side away from the silicon substrate 20 (i.e., crystallization from bottom to top).

[0101] Optionally, the specific light beam may irradiate the annealed sample from the side of the silicon substrate 20 coated with the perovskite precursor liquid film, and in this case, the wavelength of the specific light beam is between 850 nm and 900 nm.

[0102] Optionally, the specific light beam may irradiate the annealed sample from the side of the silicon substrate not coated with the perovskite precursor liquid film, and the wavelength of the specific light beam is between 400 nm and 900 nm.

[0103] In other embodiments, light sources may be provided on both sides of the silicon substrate, and the wavelength of the specific light beam irradiating the annealed sample from the side of the silicon substrate 20 coated with the perovskite precursor liquid film may be between 850 nm and 900 nm; the wavelength of the specific light beam irradiating the annealed sample from the side of the silicon substrate not coated with the perovskite precursor liquid film may be between 400 nm and 900 nm.

[0104] In summary, the specific light beam can irradiate the annealing sample from the side of the silicon substrate 20 coated with the perovskite precursor liquid film, or from the side of the silicon substrate 20 not coated with the perovskite precursor liquid film, or from both sides of the silicon substrate 20.

[0105] In the annealing method provided in this embodiment, in the initial stage of annealing, the specific light beam is used to radiate and heat the annealing sample, and the side (i.e., the upper surface) of the perovskite precursor liquid film away from the silicon substrate 20 is kept in a wet state. In this way, the surface drying of the perovskite precursor liquid film in the initial stage of annealing can be avoided, and the top-down crystallization of the perovskite precursor liquid film can be avoided.

[0106] In the above, keeping the surface of the perovskite precursor liquid film wet means that the side (the upper surface) of the perovskite precursor liquid film away from the silicon substrate 20 is kept in a liquid state and does not crystallize. The wet state can be achieved by spraying a wetting gas containing a perovskite solvent, or by other means such as covering a wetting object containing a perovskite solvent, or by placing a wetting object very close to the liquid film. The specific way of keeping the surface of the perovskite precursor liquid film wet is not limited in the present application. The wetting gas (or wetting object) contains at least one perovskite solvent, which can hinder the evaporation of the solvent in the perovskite precursor liquid film, so that the perovskite precursor liquid film does not dry out quickly. For example, the chamber of the annealing device can be filled with a wetting gas containing a perovskite solvent, such as saturated DMF vapor.

[0107] For example, in the initial stage of annealing, the chamber 60 of the annealing device is filled with a gas containing at least one perovskite solvent to keep the side of the perovskite precursor liquid film away from the silicon substrate 20 in a wet state. It should be noted that the perovskite solvent in the gas can be in a gaseous state or in the form of small droplets.

[0108] In the subsequent annealing stage after the initial stage in this embodiment, no gas can be filled into the chamber 60 of the annealing device, or a gas not containing a perovskite solvent can be filled, such as nitrogen or dry air. The specific water content of the dry air is preferably suitable for not affecting the quality of the perovskite thin film.

[0109] For example, the step of filling the gas containing at least one perovskite solvent can be opening the first switch 711 on the first pipe 71 of the annealing device to 200 sccm, and maintaining a vacuum of 1 Pa, so that the chamber 60 is filled with a gas containing at least one perovskite solvent.

[0110] For example, the gas not containing a perovskite solvent can be dry air or nitrogen. For example, the second switch 721 on the second pipe 72 of the annealing device can be opened.

[0111] In addition, in the present embodiment, the perovskite thin film annealing method further comprises: before the annealing and at the beginning of the annealing, cooling the chamber 60 by using the cooling pipe 62 arranged in the chamber wall of the annealing device chamber 60, so as to avoid the perovskite precursor liquid film from drying quickly after being sent into the chamber. For example, the chamber 60 can be cooled to below room temperature, such as 18°C or 23°C (only for example).

[0112] After the chamber 60 is cooled by using the cooling pipe 62 arranged in the chamber wall of the annealing device chamber 60, specifically, the carrier disc 90 for carrying the silicon substrate 20 and the silicon substrate 20 coated with the perovskite precursor liquid film can be first placed in the chamber 60 of the annealing device. Then, a vacuumizing process is performed, for example, the pressure in the chamber 60 can be maintained at about 0.1 Pa.

[0113] Optionally, in the present embodiment, at the beginning of the annealing, the annealing temperature is between 60°C and 200°C, and the annealing time is generally at least enough to complete the first stage of crystallization (nucleation), so as to generate tiny crystal nuclei at or near the interface between the silicon substrate and the perovskite precursor liquid, and the specific time is not limited. Generally, it is related to many factors affecting the crystallization nucleation, such as the solvent, concentration, solution temperature, impurity type, interface orientation and morphology of the actually used perovskite precursor liquid. In specific implementation, it can be determined according to experience or multiple experiments, which is generally less than or equal to 30 seconds, or can be greater than 30 seconds. In the subsequent annealing stage, the annealing temperature is between 60°C and 200°C to accelerate the evaporation of the solvent, and the annealing time needs to be at least enough to make the entire perovskite precursor liquid film crystallize into a perovskite solid film, which generally needs 8-20 minutes.

[0114] That is, in the present embodiment, the annealing can be performed in stages. The first stage is to perform radiation heating on the silicon substrate 20 by using the specific light beam emitted by the light source 10 for 20-60 seconds, so as to maintain the temperature of the silicon substrate 20 between 60°C and 200°C (for example, 150°C), which is the beginning stage of the annealing (such as S110 in Figure 9 The main purpose is to nucleate at the buried interface of the liquid film close to the silicon substrate, and tiny crystal nuclei appear. The second stage is to perform radiation heating on the silicon substrate 20 by using the specific light beam emitted by the light source 10 for 8-20 minutes, so as to maintain the temperature of the silicon substrate 20 between 60°C and 200°C (for example, 150°C), which is the subsequent annealing stage of the annealing (such as S120 in Figure 9 The main purpose is to accelerate the evaporation of the solvent in the liquid film, and the tiny crystal nuclei continue to grow, which is overall a bottom-up crystallization, and a perovskite thin film is generated.

[0115] In this embodiment, after the first stage of heating annealing is completed, the flow of the gas containing at least one perovskite solvent into the chamber 60 may be stopped (ie, the first switch 711 on the first pipe 71 is closed).

[0116] Wherein, the above-mentioned second preset time is greater than the second preset time. Exemplarily, the first preset time may be 30 seconds, and the second preset time may be 10 minutes.

[0117] After the subsequent annealing stage is completed, the light source 10 and the vacuum valve (i.e., the second solenoid valve 741 mentioned above) are turned off, and then the second switch 721 on the second pipe 72 is opened to allow dry air to flow into the chamber 60. In this way, the pressure in the chamber 60 gradually returns to atmospheric pressure, and the silicon substrate 20 and the carrier 90 are taken out after the vacuum is released.

[0118] In other embodiments, the perovskite film annealing method provided in the present application includes:

[0119] First, the chamber 60 is cooled through the cooling pipe 62 of the perovskite thin film annealing device; illustratively, the chamber 60 can be cooled to 18° C. (only for example).

[0120] Then, the silicon substrate 20 and the carrier plate 90 are placed in the chamber 60 , and the chamber 60 is evacuated to 0.1 Pa by the vacuum pump 80 .

[0121] Then, the first switch 711 on the first pipe 71 is opened, so that the chamber 60 is filled with a gas containing at least one perovskite solvent. In a specific implementation, the first switch 711 can be a gas mass flow controller (MFC). The carrier gas can be, for example, nitrogen, and the perovskite solvent can be DMF. Nitrogen is passed into the DMF solution bottle, and then the overflowed gas is collected above the liquid level of the DMF solution bottle to obtain a gas containing DMF, which is then filled into the chamber through the first pipe 71. In this step, the gas flow rate can be adjusted to 200 sccm by the gas mass flow controller, and the chamber vacuum is maintained at 1 Pa.

[0122] Then, light source 10 is turned on to radiate heat onto silicon substrate 20 using a specific light beam. For example, the temperature of silicon substrate 20 is controlled at approximately 150°C and maintained for approximately 30 seconds to complete the initial stage of annealing. Annealing for 30 seconds while maintaining the perovskite precursor film in a liquid state (i.e., the upper surface is wet) promotes perovskite crystallization from the bottom nucleation.

[0123] Then close the first switch 711 and maintain the temperature of the silicon substrate 20 at 150° C. for 10 minutes to complete the subsequent annealing stage. In this step, annealing is performed without introducing any gas or by introducing dry nitrogen or air to accelerate the evaporation of the solvent in the liquid film.

[0124] Finally, the light source 10 is turned off, the vacuum pump 80 is turned off, the second switch 721 on the second pipe 72 is turned on, the chamber 60 is restored to the atmosphere, and the silicon substrate 20 and the carrier 90 are taken out.

[0125] Of course, the above process steps are merely examples. In other embodiments, the step of introducing a gas containing at least one perovskite solvent and the initial annealing step can be omitted. In this case, the perovskite thin film annealing method can be implemented as follows: The chamber 60 can be cooled by cooling pipe 62 passing through the perovskite thin film annealing device. For example, the chamber 60 can be cooled to 23°C (for example only) to prevent the solvent from evaporating quickly before the liquid film is exposed to light, thereby drying out the film. The silicon substrate 20 and the carrier plate 90 are then placed in the chamber 60. The second switch 721 on the second pipe 72 is then opened to introduce nitrogen (or other inert gas or dry air) into the chamber 60. The first solenoid valve 731 is then opened to purge the chamber 60 (the purge time is approximately 30 seconds) until a nitrogen atmosphere is maintained in the chamber 60 (maintaining an inert atmosphere is primarily to prevent the perovskite precursor liquid film from being affected by water and oxygen in the air in the original chamber). The light source 10 is then turned on, and the silicon substrate 20 is heated to 120°C and maintained for 10 minutes. Finally, the light source 10 is turned off, and the silicon substrate 20 and the carrier plate 90 are removed. Since the present application transfers heat from the silicon substrate 20 to the perovskite precursor liquid film from the bottom up, bottom-up crystallization can still be achieved.

[0126] The present application also provides a solar cell comprising a perovskite film layer, wherein the perovskite film layer is made using the perovskite annealing device or perovskite annealing process provided in any of the above embodiments. The solar cell can be a single-junction or multi-junction cell, and the multi-junction cell can be a two-terminal, three-terminal, or four-terminal cell. Exemplarily, the solar cell is a perovskite single-junction cell, or a full perovskite tandem cell, or a crystalline silicon perovskite tandem cell, or a tandem cell of perovskite and other cells.

[0127] In addition, it should be noted that the perovskite thin film annealing method and the related processes mentioned in the above device embodiment can be referred to each other, and will not be explained again here.

[0128] The foregoing description is merely an optional embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

[0129] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. A perovskite thin film annealing device, characterized in that: The method comprises a light source for emitting a specific light beam for heating a silicon substrate of an annealed sample. The annealed sample also comprises a perovskite precursor liquid film formed on the silicon substrate. The silicon substrate is heated under the radiation of the specific light beam and the perovskite precursor liquid film is heated so that the perovskite precursor liquid film crystallizes from a side close to the silicon substrate to a side away from the silicon substrate.

2. The perovskite thin film annealing device according to claim 1, characterized in that: The light source is located on the side of the silicon substrate coated with the perovskite precursor liquid film, and the wavelength of the specific light beam is between 850nm and 900nm; and / or, The light source is located on a side of the silicon substrate that is not coated with the perovskite precursor liquid film, and the wavelength of the specific light beam is between 400 nm and 900 nm.

3. The perovskite thin film annealing device according to claim 1, characterized in that: The perovskite thin film annealing device further includes a fly-eye lens disposed between the light source and the silicon substrate, and the fly-eye lens is used to homogenize and constrain the light beam emitted by the light source.

4. The perovskite thin film annealing device according to claim 1, characterized in that: The perovskite thin film annealing device also includes a temperature sensor and a controller; the probe of the temperature sensor is arranged on the side of the silicon substrate away from the light source, and is used to detect the temperature of the silicon substrate and send it to the controller; the controller is used to control the output power of the light source according to the temperature of the silicon substrate.

5. The perovskite thin film annealing device according to any one of claims 1 to 4, characterized in that: Also includes: a chamber for accommodating the annealed sample, and a first pipe communicating with the chamber; The first pipe is used to fill the chamber with a gas containing at least one perovskite solvent at the initial stage of annealing, so as to keep the surface of the perovskite precursor liquid film wet; Optionally, a plurality of air outlet holes are further provided in an area of ​​the chamber wall facing the annealing sample, and the plurality of air outlet holes are connected to the first pipeline.

6. The perovskite thin film annealing device according to claim 5, characterized in that: A cooling pipe is provided in the cavity wall of the cavity for cooling the cavity before annealing.

7. The perovskite thin film annealing device according to claim 5, characterized in that: The first pipe is also provided with a first switch for controlling whether the first pipe is turned on. The first switch is used to turn on the first pipe at the initial stage of annealing under the control of the controller, and to turn off the first pipe in the subsequent annealing stage after the initial stage.

8. The perovskite thin film annealing device according to claim 5, characterized in that: Also includes: A second pipe having one end connected to the chamber, and a second switch arranged on the second pipe; the second pipe is used to fill nitrogen or dry air into the chamber in the subsequent annealing stage after the initial stage.

9. The perovskite thin film annealing device according to claim 5, characterized in that: The perovskite thin film annealing device further includes: a third pipe having one end connected to the chamber and a first solenoid valve connected to the third pipe; the third pipe is used to discharge the gas in the chamber.

10. The perovskite thin film annealing device according to claim 5, characterized in that: The perovskite thin film annealing device also includes a fourth pipe, a vacuum pump and a second solenoid valve; one end of the fourth pipe is connected to the chamber and the other end is connected to the vacuum pump, and the second solenoid valve is connected to the fourth pipe; the vacuum pump is used to vacuum the chamber through the fourth pipe.

11. The perovskite thin film annealing device according to any one of claims 1 to 4, characterized in that: Also includes: a first chamber for performing initial annealing on the annealed sample, and a second chamber for performing subsequent annealing on the annealed sample; The first chamber is provided with a first pipe in communication with the first chamber, and the first pipe is used to fill the first chamber with a gas containing at least one perovskite solvent at the initial stage of annealing to keep the surface of the perovskite precursor liquid film wet; a cooling pipe is provided in the wall of the first chamber for cooling the first chamber before the annealing; The second chamber is provided with a second pipe having one end connected to the second chamber; the second pipe is used to fill the second chamber with gas that does not contain perovskite solvent in a subsequent annealing stage after the initial stage; the second chamber is also provided with a fourth pipe, one end of the fourth pipe is connected to the second chamber, and the other end is connected to a vacuum pump, and the vacuum pump is used to evacuate the second chamber through the fourth pipe.

12. A method for annealing a perovskite film, characterized in that: include: A specific light beam is used to perform radiation heating on the annealed sample so that the silicon substrate of the annealed sample is heated before the perovskite precursor liquid film, so that the perovskite precursor liquid film crystallizes from a side close to the silicon substrate to a side away from the silicon substrate, wherein the perovskite precursor liquid film is formed on the silicon substrate.

13. The perovskite thin film annealing method according to claim 12, characterized in that: When the specific light beam irradiates the annealed sample from the side of the silicon substrate coated with the perovskite precursor liquid film, the wavelength of the specific light beam is between 850 nm and 900 nm; and / or, When the specific light beam irradiates the annealed sample from the side of the silicon substrate not coated with the perovskite precursor liquid film, the wavelength of the specific light beam is between 400 nm and 900 nm.

14. The perovskite thin film annealing method according to claim 12, characterized in that: At the initial stage of annealing, a specific light beam is used to perform radiation heating on the annealed sample while keeping the surface of the perovskite precursor liquid film wet.

15. The perovskite thin film annealing method according to claim 12, characterized in that: At the initial stage of annealing, a gas containing at least one perovskite solvent is filled into the chamber of the annealing device to keep the surface of the perovskite precursor liquid film wet; In the subsequent annealing stage after the initial stage, the filling of gas into the chamber is stopped, or the chamber is filled with gas that does not contain a perovskite solvent.

16. The perovskite thin film annealing method according to claim 15, characterized in that: Also includes: Before annealing and at the initial stage of annealing, the chamber is cooled by a cooling pipe arranged in the chamber wall of the annealing device, so as to keep the surface of the perovskite precursor liquid film wet at the initial stage of annealing.

17. The perovskite thin film annealing method according to claim 15, characterized in that: In the initial stage, the annealing temperature is between 60° C. and 200° C., and the annealing time is between 20 and 60 seconds; In the subsequent annealing stage, the annealing temperature is between 60° C. and 200° C., and the annealing time is between 8 and 20 minutes.

18. A solar cell comprising a perovskite film layer, characterized in that: The perovskite film layer is manufactured using the perovskite annealing device described in any one of claims 1 to 11, or using the perovskite annealing process described in any one of claims 12 to 17.

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