Sensor chips and electronic devices containing them

Abstract

This application provides a sensor chip and an electronic device having the same. The sensor chip includes a sensor module, a bandgap reference module, and a quantization module. The bandgap reference module is a circuit module inherent in the sensor chip itself. Obtaining a compensation signal through the bandgap reference module helps reduce additional circuit overhead. Furthermore, the quantization module quantizes the detection signal output by the sensor module to obtain detection parameters and the compensation signal output by the bandgap reference module to obtain compensation parameters. That is, the bandgap reference module can output a compensation signal in the second detection stage, thus not affecting the sensor module's output detection signal in the first detection stage, and therefore not affecting the normal operation of the sensor. Therefore, it is advantageous to perform temperature compensation on the sensor chip without increasing additional circuit overhead or affecting the normal operation of the sensor.

Description

[0001] This application claims priority to Chinese Patent Application No. 202510919746.0, filed on July 3, 2025, entitled "Sensor Chip and Electronic Device Having the Same", the entirety of which is incorporated herein by reference. Technical Field

[0002] The disclosed embodiments of this application relate to the field of sensor technology, and more specifically, to a sensor chip and an electronic device having the same. Background Technology

[0003] Sensor chips can detect changes in the physical environment (magnetic fields, light, sound, pressure, etc.), but when the temperature of the sensor chip changes, its readout accuracy may be greatly affected, which in turn affects the system's feedback and operating status. Therefore, a temperature detection module is needed to compensate for the sensor chip.

[0004] Some sensor chips incorporate additional temperature detection modules to compensate for the sensor chip's performance, but this adds extra circuit overhead.

[0005] Therefore, how to achieve temperature compensation for the sensor chip without increasing additional circuit overhead or affecting the normal operation of the sensor has become an urgent problem to be solved. Summary of the Invention

[0006] According to embodiments of this application, this application proposes a sensor chip and an electronic device having the same, to perform temperature compensation on the sensor chip without increasing additional circuit overhead or affecting the normal operation of the sensor.

[0007] According to one aspect of this application, a sensor chip is disclosed, comprising: a sensor module, a bandgap reference module, and a quantization module. The sensor module is used to output a detection signal; the bandgap reference module is used to output a compensation signal; the quantization module is coupled to the sensor module and the bandgap reference module, and the quantization module is configured to quantize the detection signal to obtain detection parameters, and to quantize the compensation signal to obtain compensation parameters, so as to subsequently compensate the detection parameters based on the compensation parameters; wherein, in a first detection stage, the quantization module receives the detection signal output by the sensor module and quantizes the detection signal to obtain the detection parameters; in a second detection stage, the quantization module receives the compensation signal output by the bandgap reference module and quantizes the compensation signal to obtain the compensation parameters.

[0008] According to a second aspect of this application, an electronic device is provided, which includes the sensor chip described above.

[0009] In the above scheme, the bandgap reference module is a circuit module inherent to the sensor chip itself. Obtaining the compensation signal through the bandgap reference module helps reduce additional circuit overhead. Furthermore, the quantization module quantizes the detection parameters based on the detection signal output by the sensor module and the compensation parameters based on the compensation signal output by the bandgap reference module. This means the bandgap reference module can output the compensation signal in the second detection stage without affecting the sensor module's output signal in the first detection stage, thus ensuring normal sensor operation. Therefore, this scheme facilitates temperature compensation of the sensor chip without increasing additional circuit overhead or affecting normal sensor operation. Attached Figure Description

[0010] The present application will be further described below with reference to the accompanying drawings and embodiments. In the drawings:

[0011] Figure 1 This is a schematic diagram of the sensor chip frame in one embodiment of this application;

[0012] Figure 2 This is a schematic diagram of the circuit structure of the bandgap reference module and the quantization module in one embodiment of this application;

[0013] Figure 3 This is a schematic diagram of the circuit structure of the bandgap reference module and the quantization module in another embodiment of this application;

[0014] Figure 4 This is a schematic diagram of the circuit structure of the bandgap reference module and the quantization module in another embodiment of this application;

[0015] Figure 5 This is a schematic diagram of the sensor chip frame in another embodiment of this application;

[0016] Figure 6 This is a schematic diagram of the sensor chip frame in another embodiment of this application;

[0017] Figure 7 This is a schematic diagram of the sensor chip frame in another embodiment of this application;

[0018] Figure 8 This is a schematic diagram of the sensor chip frame in yet another embodiment of this application;

[0019] Figure 9 This is a schematic diagram of the quantization module in one embodiment of this application;

[0020] Figure 10 This is a schematic diagram of the quantization module in another embodiment of this application;

[0021] Figure 11 This is a schematic diagram of the sensor chip frame in yet another embodiment of this application;

[0022] Figure 12 This is a schematic diagram of the sensor chip frame in yet another embodiment of this application;

[0023] Figure 13 The diagram below is a circuit structure schematic of an embodiment of the reference signal conditioning module of this application;

[0024] Figure 14 The diagram shows the changes in gain error and compensation parameters with temperature.

[0025] Figure 15 This is a schematic diagram of the framework of an electronic device according to an embodiment of this application. Detailed Implementation

[0026] To enable those skilled in the art to better understand the technical solutions of this application, the technical solutions of this application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0027] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the application. The singular forms “a,” “said,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms, unless otherwise clearly indicated above. “Multiple” generally includes at least two, but does not exclude the inclusion of at least one.

[0028] It should be understood that the term "and / or" used herein is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Furthermore, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship. The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0029] It should be understood that the terms "comprising," "including," or any other variations used herein are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0030] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in every place in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0031] Sensor chip 100 can detect changes in the physical environment (magnetic field, light, sound, pressure, etc.), but when the temperature of sensor chip 100 changes, its readout accuracy may be greatly affected, which in turn affects the system's feedback and working status. Therefore, a temperature detection module is needed to compensate for sensor chip 100.

[0032] Existing high-precision temperature detection solutions often employ a separate temperature detection circuit, including a temperature-sensing transistor, an amplifier, and a digital-to-analog converter (ADC). The temperature signal output from the temperature-sensing transistor is amplified by the amplifier and then sent to the ADC for quantization and readout. This approach, due to the separate temperature detection circuit, increases additional circuit overhead.

[0033] Please refer to Figure 1 One embodiment of this application provides a sensor chip 100, including: a sensor module 110, a bandgap reference module 120, and a quantization module 130. The sensor module 110 is used to output a detection signal; the bandgap reference module 120 is used to output a compensation signal; the quantization module 130 is coupled to the sensor module 110 and the bandgap reference module 120. The quantization module 130 is configured to quantize the detection signal to obtain detection parameters, and to quantize the compensation signal to obtain compensation parameters, so as to subsequently compensate the detection parameters based on the compensation parameters; wherein, in a first detection stage, the quantization module 130 receives the detection signal output by the sensor module 110 and quantizes the detection signal to obtain the detection parameters; in a second detection stage, the quantization module 130 receives the compensation signal output by the bandgap reference module 120 and quantizes the compensation signal to obtain the compensation parameters.

[0034] In the above scheme, the bandgap reference module 120 is a circuit module inherent in the sensor chip 100 itself. Obtaining the compensation signal through the bandgap reference module 120 helps reduce additional circuit overhead. Furthermore, the quantization module 130 quantizes the detection parameters based on the detection signal output by the sensor module 110 and the compensation parameters based on the compensation signal output by the bandgap reference module 120. That is, the bandgap reference module 120 can output the compensation signal in the second detection stage, thus not affecting the output of the detection signal by the sensor module 110 in the first detection stage, and therefore not affecting the normal operation of the sensor. The second detection stage can be set between multiple first detection stages, or the second detection stage can be set before or after the first detection stages; for example, one or more second detection stages are set by default in the preparation process before the first detection stage or the reset process after the first detection stage. Therefore, it is beneficial to perform temperature compensation on the sensor chip 100 without increasing additional circuit overhead or affecting the normal operation of the sensor.

[0035] Those skilled in the art will understand that the bandgap reference module 120 and the quantization module 130 are common circuit modules in the sensor chip 100. Therefore, in the sensor chip 100 provided in this embodiment, the temperature detection function is implemented using the original bandgap reference module 120 in the sensor chip 100. Then, based on the compensation signal generated by the bandgap reference module 120, compensation parameters are obtained in the quantization module 130 to compensate the detection parameters. Since the bandgap reference module 120 and the quantization module 130 that are already present in the sensor chip 100 are used, there is no need to set up an additional bandgap reference module 120 for temperature detection, which helps to avoid increasing additional circuit overhead.

[0036] In sensor chip 100, bandgap reference module 120 is used to provide reference voltage or reference current for other modules in sensor chip 100. For example, when sensor chip 100 is performing acquisition tasks (such as acquisition of magnetic field signals, acquisition of voltage signals, etc., the specific acquisition task depends on the type of sensor chip 100), bandgap reference module 120 and vectorization module 130 provide reference voltage.

[0037] The quantization module 130 can receive / read 20,000 times per second. Please refer to [reference needed]. Figure 1During the intervals between receiving / reading the detection signals from the sensor module 110, the quantization module 130 can receive the compensation signal from the bandgap reference module 120. For example, temperature detection can be set to occur only once every 20k clock cycles, meaning the quantization module 130 receives / reads the compensation signal from the bandgap reference module 120 only once every 20k clock cycles. It is possible to select the 5001st, 10001st, or 15001st clock cycle as the time to receive / read the compensation signal from the bandgap reference module 120; alternatively, it is possible to select the 1st or 20000th clock cycle as the time to receive / read the compensation signal from the bandgap reference module 120. Alternatively, within 20k clock cycles, 10 temperature detections can be set, for example, in the 1st-10th cycles or the 20000th-20010th cycles, the quantization module 130 receives / reads the compensation signal from the bandgap reference module 120; this helps prevent the bandgap reference module 120 from affecting the normal operation of the sensor chip 100.

[0038] In other words, in this application, since the sensor chip 100 does not have an additional bandgap reference module 120 and quantization module 130, the original bandgap reference module 120 in the sensor chip 100 needs to provide a reference voltage (or reference current) to other modules when the sensor chip 100 performs a data acquisition task. To avoid affecting the normal operation of the sensor chip 100, the bandgap reference module 120 can output the compensation signal and the reference signal in a time-division manner, and the quantization module 130 can receive / read the reference signal and the compensation signal of the bandgap reference module 120 in a time-division manner, and the quantization module 130 quantizes the compensation signal to obtain the compensation parameters; or, the bandgap reference module 120 can output the reference signal while outputting the compensation signal. Therefore, it is beneficial to perform temperature compensation on the sensor chip 100 without increasing additional circuit overhead or affecting the normal operation of the sensor.

[0039] In some embodiments, the quantization module 130 can perform 20K signal reception / reading per second, and the quantization module 130 can select 10 times from the 20K reception / reading to receive / read 10 compensation signals from the bandgap reference module 120.

[0040] In some embodiments, sensor module 110 may include a Hall sensor to output a detection signal related to a magnetic field; sensor module 110 may also include a light sensor, a voltage sensor, etc., and this application does not limit the type of sensor module 110.

[0041] In some embodiments, the quantization module 130 includes an analog-to-digital converter (not shown) coupled to the sensor module 110 and the bandgap reference module 120. The analog-to-digital converter quantizes the detection signal to obtain detection parameters and quantizes the compensation signal to obtain compensation parameters, so as to subsequently compensate the detection parameters based on the compensation parameters. Specifically, in a first detection stage, the analog-to-digital converter receives the detection signal from the sensor module 110 and quantizes the detection signal to obtain the detection parameters; in a second detection stage, the analog-to-digital converter receives the compensation signal output from the compensation signal output terminal 120a of the bandgap reference module 120 and quantizes the compensation signal to obtain the compensation parameters.

[0042] In some embodiments, the quantization module 130 further includes an amplification circuit (not shown in the figure), which is coupled between the sensor module 110 and the analog-to-digital conversion circuit, and coupled between the bandgap reference module 120 and the analog-to-digital conversion circuit, to amplify the detection signal or the compensation signal and output it to the analog-to-digital conversion circuit.

[0043] In some embodiments, please refer to Figures 2-4 The amplifier circuit may include a programmable gain amplifier (PGA), and the analog-to-digital conversion circuit may include an analog-to-digital converter (ADC).

[0044] In other embodiments, the amplifier circuit may include an integrator.

[0045] Please refer to Figure 2 In some embodiments, the bandgap reference module 120 includes a current mirror with MOSFETs M1, M2, and M3. The current mirror is coupled to a dynamic element matching (DEM) circuit and an operational amplifier U1. The current mirror is also coupled through the DEM to three branches with transistors Q1, Q2, and Q3. The DEM is used to eliminate mismatch between the transistors and the operational amplifier. The compensation signals output by the bandgap reference module 120 include voltages VBG and VBE. The quantization module 130 includes a chopper, a PGA, and an ADC. The voltages VBG and VBE output by the bandgap reference module 120 are amplified by the PGA and then sent to the ADC for detection. The gain of the PGA can be selected based on the ADC's reference voltage (VREF) for quantization, thus optimizing performance. Timing offset is eliminated by adding a chopper through the PGA.

[0046] exist Figure 2 In the circuit shown, the temperature T detected by the bandgap reference module 120 can be expressed as: Where VBG is the bandgap reference voltage, α is the bandgap reference zero-temperature drift proportionality coefficient, k is the Boltzmann constant, and N is the ratio of transistor current or area. Therefore, the temperature T mentioned above can be expressed as In the expression for temperature T, The output value of the ADC. Since the absolute temperature is constant, the absolute temperature can be obtained from the output of the ADC.

[0047] Those skilled in the art will know that Figure 2 The diagram shown is only one of the circuit structures of the bandgap reference module 120 and the quantization module 130. The bandgap reference module 120 can also be other voltage-mode or current-mode structures, or NPN transistors can be used if DNW technology is available.

[0048] like Figure 2 As shown, the output voltage VBG of the bandgap reference module 120 is coupled to the reference voltage terminal of the ADC (not shown in the figure). That is, the output voltage VBG of the bandgap reference module 120 can be used as the reference voltage VREF of the ADC. In other embodiments, the reference voltage of the ADC is not limited to VBG, but can also be a voltage divider of VBG, depending on the quantization range of the ADC of the sensor itself.

[0049] Please refer to Figure 3 In scenarios where some sensor chips 100 are not very sensitive to temperature but still require a certain degree of temperature compensation, the DEM and chopper can be omitted in the bandgap reference module 120 to achieve a lower-precision temperature detection function.

[0050] Please refer to Figure 4 Alternatively, the quantization module 130 can omit the PGA, and the voltages VBG and VBE output by the bandgap reference module 120 can be directly sent to the ADC for quantization. This approach, compared to other embodiments, further reduces circuit area and power consumption. In this embodiment, due to the absence of a PGA, the ADC's input signal driving capability is weaker, requiring a longer sampling time, which can be selected based on the actual operating conditions of the sensor chip 100. Simultaneously, the bandgap reference module 120 can be configured with a DEM to achieve high-precision temperature sampling (e.g., ...). Figure 4 (As shown). In other embodiments, the bandgap reference module 120 may also omit the DEM to achieve lower-precision temperature sampling.

[0051] Please refer to Figure 5In some embodiments, the sensor chip 100 may further include a first register module 210, a second register module 220, and a compensation calculation module 230; the first register module 210 is coupled to the quantization module 130 to store the detection parameters; the second register module 220 is coupled to the quantization module 130 to store the compensation parameters; the compensation calculation module 230 is coupled to the first register module 210 and the second register module 220, and performs calculations based on the compensation parameters and the detection parameters to obtain the compensated detection parameters.

[0052] By setting the first register module 210 and the second register module 220, the compensation calculation module 230 can compensate the detection parameters to obtain compensated detection parameters, thereby reducing the influence of temperature on the detection parameters. For example, if the sensor module 110 is a Hall sensor module, the corresponding detection parameters can be used to characterize the magnetic field strength of the environment; therefore, it is assumed that the detection parameters are field strength parameters. As mentioned above, the second detection stage can be interspersed between the first detection stages, and within the same time period, the number of first detection stages can be greater than the number of second detection stages. For instance, in 20 first detection stages, there is no second detection stage between the 1st to 10th first detection stages, and there is also no second detection stage between the 11th to 20th first detection stages, while one second detection stage is interspersed between the 10th and 11th first detection stages. In the second detection stage, the compensation parameters generated by the quantization module 130 after the compensation signal generated by the bandgap reference module 120 are used to update the old compensation parameters stored in the second register module 220 to obtain new compensation parameters. In the subsequent 11th to 20th first detection stages, the detection parameters generated by the quantization module 130 after the detection signal generated by the sensor module 110 are stored in the first register module 210. The compensation calculation module 230 calculates the compensation parameters in the first register module 210 based on the compensation parameters in the second register module 220 to obtain the compensated detection parameters. In other embodiments, given the high acquisition frequency of the sensor, compensating for each acquired detection parameter consumes a large amount of power. Therefore, the average of multiple detection parameters stored in the first register module 210 can be calculated before compensation, or outliers can be removed before averaging and compensation, etc. Those skilled in the art will understand that the above compensation process is merely an exemplary description of this embodiment, and the compensation process in actual application scenarios may differ from the above description; this application does not impose limitations.

[0053] In some embodiments, after the temperature is collected in the second detection stage, the detection parameters can be compensated, such as the compensated detection parameter D. correct =D out +αT, where α is the compensation factor, D outFor detection parameters, D correct The compensated detection parameter is T, which is the compensation parameter (e.g., temperature). In different sensors, α may be a fixed coefficient, or it may need to be determined using a lookup table, i.e., it varies with temperature.

[0054] In some embodiments, the compensation calculation module 230 can multiply the detection parameters from the first register module 210 by the compensation parameter to obtain the compensated detection parameters; or, the compensation calculation module 230 can add / subtract the compensation parameter to the detection parameters from the first register module 210 to obtain the compensated detection parameters.

[0055] Please refer to Figure 6 The bandgap reference module 120 includes a compensation signal output terminal 120a for outputting the compensation signal; the sensor chip 100 also includes a switching module 610, coupled between the sensor module 110 and the quantization module 130, and coupled between the compensation signal output terminal 120a and the quantization module 130, so as to selectively enable the quantization module 130 to receive the detection signal or the compensation signal.

[0056] By coupling the compensation signal output terminal 120a of the bandgap reference module 120 to the quantization module 130 through the switching module 610, and by also coupling the sensor module 110 to the quantization module 130 through the switching module 610, the switching module 610 can selectively cause the quantization module 130 to receive either the detection signal or the compensation signal. For example, at the start of the first detection phase, the switching module 610 connects the sensor module 110 to the quantization module 130, while disconnecting the connection between the compensation signal output terminal 120a of the bandgap reference module 120 and the quantization module 130, thereby allowing the quantization module 130 to receive the detection signal during the first detection phase. At the start of the second detection phase, the switching module 610 disconnects the connection between the sensor module 110 and the quantization module 130, while connecting the compensation signal output terminal 120a of the bandgap reference module 120 to the quantization module 130, thereby allowing the quantization module 130 to receive the compensation signal during the second detection phase.

[0057] In some embodiments, the switching module 610 may include a metal-oxide-semiconductor field-effect transistor (MOSFET), a bipolar junction transistor (BJT), or an integrated circuit with switching functionality, etc. Please refer to... Figure 7The switching module 610 may have a first switching path 710 and a second switching path 720. Taking a MOSFET as an example, the first switching path 710 and the second switching path 720 each have a MOSFET. By sending a drive signal to the MOSFET in the first switching path 710 or the second switching path 720 at the beginning of the first detection stage or the second detection stage to turn it on or off, the quantization module 130 can receive the detection signal or the compensation signal.

[0058] In some embodiments, please refer to Figure 8 The quantization module 130 further includes a gain adjustment unit 810 and a gain amplification unit 820. The gain amplification unit 820 is coupled to the sensor module 110 and the bandgap reference module 120 to amplify the detection signal and the compensation signal. The gain adjustment unit 810 is coupled to the gain amplification unit 820 and is used to adjust the gain of the gain amplification unit 820 when the sensor chip 100 switches between the first detection stage and the second detection stage.

[0059] The gain adjustment unit 810 may include, for example, a programmable gain amplifier (PGA), and the quantization module 130 may include an ADC. For details, please refer to the foregoing embodiments, which will not be repeated here.

[0060] The amplitudes of the detection signal generated by the sensor module 110 in the first detection stage and the compensation signal generated by the bandgap reference module 120 in the second detection stage may be different. Therefore, when switching between the first detection stage and the second detection stage, the gain of the gain amplification unit 820 can be adjusted by the gain adjustment unit 810, thereby improving the resolution of temperature detection in the second detection stage.

[0061] In some embodiments, the gain adjustment unit 810 includes at least one of the following: an adjustable resistor, a switched capacitor, and an adjustable capacitor.

[0062] Please refer to Figure 9 The gain adjustment unit 810 includes an adjustable resistor R1 and an adjustable resistor R2. The adjustable resistor R1 is coupled between the non-inverting input terminal and the inverting output terminal of the PGA, and the adjustable resistor R2 is coupled between the inverting input terminal and the non-inverting output terminal of the PGA. Therefore, the gain can be adjusted by adjusting the resistance value across the PGA.

[0063] Please continue to refer to Figure 9 The quantization module 130 also includes a chopper. For example, it may include two choppers, respectively coupled to the input and output of the PGA. The quantization module 130 may also include an input resistor RIN, which is coupled to the bandgap reference module 120.

[0064] Please refer to Figure 10 The gain adjustment unit 810 includes switched capacitors C1 and C2, and an input capacitor CIN. Switched capacitor C1 is coupled between the non-inverting input and inverting output of the PGA, switched capacitor C2 is coupled between the inverting input and non-inverting output of the PGA, and input capacitor CIN is coupled between the input of the PGA and the bandgap reference module 120. Those skilled in the art will understand that although... Figure 10 The switches in the circuit are represented by ordinary switch symbols. However, the switches in switched capacitors C1 and C2 can be controllable semiconductor switches, such as MOSFETs, BJTs, IGBTs, or any combination thereof. This application does not impose any restrictions on this. The gain of the gain adjustment unit 810 can be calculated from the ratio of the input capacitor to the switched capacitor. Therefore, the gain can be adjusted by adjusting the ratio of the input capacitor to the switched capacitor. In practical applications, the input capacitor CIN and the switched capacitors C1 / C2 can be selected with the same unit of capacitance for better matching. For example, the input capacitor CIN can be selected as eight 10um*10um MIM capacitors, and the switched capacitors C1 and C2 can each be selected as one 10um*10um MIM capacitor, resulting in a gain of 8.

[0065] In some embodiments, when the amplitude of the detected signal is less than the amplitude of the compensation signal, for example, the detected signal generated by the sensor module 110 is between 1 and 10 mV, while the compensation signal generated by the bandgap reference module 120 is between 10 and 100 mV, the gain of the gain amplification unit 820 needs to be reduced in the second detection stage. Therefore, the resistance can be reduced or the capacitance increased. When the amplitude of the detected signal is greater than the amplitude of the compensation signal, for example, the detected signal generated by the sensor module 110 is between 10 and 100 mV, while the compensation signal generated by the bandgap reference module 120 is between 1 and 10 mV, the gain of the gain amplification unit 820 needs to be increased in the second detection stage. Therefore, the resistance can be increased or the capacitance decreased.

[0066] In some embodiments, please refer to Figure 11 The bandgap reference module 120 includes a reference signal output terminal 120b, coupled to the quantization module 130, to provide a reference signal to the quantization module 130. The reference signal can be a reference voltage or a reference current. (Please refer to the reference...) Figures 2-4 The bandgap reference module 120 outputs voltages including voltage VBG and voltage VBE. Voltage VBG is also output to the reference voltage terminal of the ADC, thus providing a reference voltage for the ADC. In other words, the bandgap reference module 120 may have a reference signal output terminal 120b for outputting voltage VBG.

[0067] In some embodiments, the reference voltage of the ADC is not directly the voltage VBG (e.g., 1.2V) output by the bandgap reference module 120. To improve the signal-to-noise ratio, VBG may be appropriately amplified or reduced before being used as the ADC reference voltage. Therefore, please refer to... Figure 12 The sensor chip 100 also includes a reference signal adjustment module 1210, which is coupled to the reference signal output terminal 120b and the quantization module 130 to adjust the reference signal and output the adjusted reference signal to the quantization module 130.

[0068] Please refer to Figure 13 , Figure 13 The circuit structure of a reference signal conditioning module 1210 according to one embodiment is shown. In some embodiments, the reference signal conditioning module 1210 includes an operational amplifier U13, a field-effect transistor M13, and an adjustable resistor R13; the non-inverting input terminal of the operational amplifier U13 is coupled to the reference signal output terminal 120b, the output terminal of the operational amplifier U13 is coupled to the gate of the field-effect transistor M13, the source of the field-effect transistor M13 is connected to the power supply voltage, the drain is coupled to the first terminal of the adjustable resistor R13, the second terminal of the adjustable resistor R13 is grounded, the adjustment terminal of the adjustable resistor R13 is coupled to the quantization module 130, and the first terminal of the adjustable resistor R13 is also coupled to the inverting input terminal of the operational amplifier U13. With the above structure of the reference signal conditioning module 1210, the amplitude of the reference signal generated by the bandgap reference module 120 can be adjusted. Those skilled in the art will understand that the circuit structure of the reference signal conditioning module 1210 is not limited to... Figure 13 The structure shown.

[0069] Please refer to Figure 14 The dashed line represents the curve of the compensation parameter change, and the solid line represents the curve of the gain error of the detection parameter change with temperature. Taking sensor module 110 as a Hall sensor as an example, for Hall sensors, the gain of converting different magnetic fields into voltage output varies slightly at different temperatures. Therefore, in some applications, it is necessary to compensate for its gain at different temperatures. (Reference) Figure 14 The gain error of the detection parameter increases with increasing temperature. In order to compensate for the gain error of the detection parameter, the compensation parameter is complementary to the gain error of the detection parameter and follows the change of the gain error of the detection parameter.

[0070] Please refer to Figure 15 In a second aspect, this application provides an electronic device 1500, including the sensor chip 100 of any of the above embodiments.

[0071] Electronic device 1500 can be an electronic device 1500 with sensing function, including consumer electronics such as smartwatches, mobile phones, tablets and other devices.

[0072] In the above scheme, the bandgap reference module 120 is a circuit module inherent in the sensor chip 100 itself. Obtaining the compensation signal through the bandgap reference module 120 helps reduce additional circuit overhead. Furthermore, at different stages, the quantization module 130 quantizes the detection parameters based on the detection signal output by the sensor module 110 and the compensation parameters based on the compensation signal output by the bandgap reference module 120, respectively. That is, the bandgap reference module 120 only outputs the compensation signal in the second detection stage, thus not affecting the output of the detection signal by the sensor module 110 in the first detection stage, and therefore not affecting the normal operation of the sensor. Therefore, it is beneficial to perform temperature compensation on the sensor chip 100 without increasing additional circuit overhead or affecting the normal operation of the sensor.

[0073] Those skilled in the art will readily recognize that numerous modifications and variations can be made to the apparatus and method while maintaining the teachings of this application. Therefore, the above disclosure should be considered limited only by the scope of the appended claims.

Claims

1. A sensor chip, characterized in that, include: The sensor module is used to output detection signals; The bandgap reference module is used to output compensation signals; A quantization module, coupled to the sensor module and the bandgap reference module, is configured to quantize the detection signal to obtain detection parameters, and to quantize the compensation signal to obtain compensation parameters, so as to subsequently compensate the detection parameters based on the compensation parameters; In the first detection stage, the quantization module receives the detection signal output by the sensor module and quantizes the detection signal to obtain the detection parameters. In the second detection stage, the quantization module receives the compensation signal output by the bandgap reference module and quantizes the compensation signal to obtain the compensation parameters; The bandgap reference module includes a compensation signal output terminal for outputting the compensation signal; The sensor chip also includes a switching module coupled between the sensor module and the quantization module, and coupled between the compensation signal output terminal and the quantization module, so as to selectively enable the quantization module to receive the detection signal or the compensation signal.

2. The sensor chip according to claim 1, characterized in that, Also includes: A first register module is coupled to the quantization module to store the detection parameters; The second register module is coupled to the quantization module to store the compensation parameters; The compensation calculation module is coupled to the first register module and the second register module, and performs calculations based on the compensation parameters and the detection parameters to obtain the compensated detection parameters.

3. The sensor chip according to claim 1, characterized in that, The quantization module includes: A gain amplification unit, coupled to the sensor module and the bandgap reference module, amplifies the detection signal and the compensation signal; A gain adjustment unit, coupled to the gain amplification unit, is used to adjust the gain of the gain amplification unit when the sensor chip switches between the first detection stage and the second detection stage.

4. The sensor chip according to claim 3, characterized in that, The gain adjustment unit includes at least one of the following: an adjustable resistor, a switched capacitor, and an adjustable capacitor.

5. The sensor chip according to claim 1 or 2, characterized in that, The bandgap reference module includes a reference signal output terminal, which is coupled to the quantization module to provide a reference signal for the quantization module.

6. The sensor chip according to claim 5, characterized in that, Also includes: A reference signal adjustment module is coupled to the reference signal output terminal and the quantization module to adjust the reference signal and output the adjusted reference signal to the quantization module.

7. The sensor chip according to claim 1, characterized in that, The quantization module includes: An analog-to-digital conversion circuit, coupled to the sensor module and the bandgap reference module, quantizes the detection signal to obtain the detection parameters, and quantizes the compensation signal to obtain the compensation parameters, so as to subsequently compensate the detection parameters based on the compensation parameters; In the first detection stage, the analog-to-digital converter receives the detection signal from the sensor module and quantizes the detection signal to obtain the detection parameters; in the second detection stage, the analog-to-digital converter receives the compensation signal output from the compensation signal output terminal of the bandgap reference module and quantizes the compensation signal to obtain the compensation parameters.

8. The sensor chip according to claim 7, characterized in that, The quantization module also includes: An amplification circuit is coupled between the sensor module and the analog-to-digital conversion circuit, and coupled between the bandgap reference module and the analog-to-digital conversion circuit, to amplify the detection signal or the compensation signal and output it to the analog-to-digital conversion circuit.

9. An electronic device, characterized in that, Includes the sensor chip according to any one of claims 1-8.

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