Vacuum chuck, gluing and developing equipment and control method of gluing and developing equipment

Abstract

The embodiment of the invention discloses a vacuum chuck, gluing and developing equipment and a control method of the gluing and developing equipment, relates to the technical field of semiconductor equipment, and solves the problem that a developing solution damages the edge of a crystal back in an existing subsequent process. The vacuum chuck is provided with a first chuck surface. A vacuum channel and an air injection channel are formed in the vacuum suction cup, and the vacuum channel is used for being communicated with vacuumizing equipment. And an inlet of the vacuum channel is positioned on the first chuck surface of the vacuum chuck. The air injection channel is used for communicating with air supply equipment. The outlet direction of the air injection channel faces the radial outer side of the vacuum chuck and is used for injecting air towards the radial outer side of the first chuck face. Radial airflow sprayed out of the air spraying channel can form an air curtain on the radial outer side of the first disc face, and the developing solution is prevented from flowing to the wafer back. Therefore, the developing solution can be effectively prevented from flowing to the edge of the back surface of the wafer to cause damage. Moreover, according to the gluing developing equipment, a blade-shaped circular ring does not need to be replaced regularly to prevent dirt accumulation, so that the consumable cost is reduced, and a developing solution can be prevented from being in contact with a crystal back.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to a vacuum suction cup, a glue coating and developing device, and a control method thereof. Background Art

[0002] During the wafer front-end of line (FEOL) process, a multi-pass furnace-based thin film deposition process is performed. During this process, an oxide film is simultaneously deposited on both the front and back sides of the wafer. The oxide film deposited on the backside (abbreviated as "wafer backside") serves as a protective layer to prevent damage during subsequent processing.

[0003] For example, when wafers enter the photolithography process for metal trace and via layers in the backend of line loop (BEOL) process, they undergo a backside clean to remove contaminants from the wafer's backside. During the backside clean (BSC) process, hydrofluoric acid (HF) or nitric acid (HNO3) reacts with the oxide film on the wafer's backside. After multiple backside cleans, the oxide film is removed. The wafers undergo photolithography after multiple backside cleans. The wafers are then developed, and during this process, the developer (tetramethylammonium hydroxide (TMAH)) can easily overflow from the wafer's front side onto the backside. When the exposed edge of the wafer backside (e.g., the bottom surface of the silicon substrate) comes into contact with the developer, a chemical reaction occurs between the silicon substrate and the developer, causing damage to the wafer's backside edge. Furthermore, as the number of backside cleans and photolithography increases, the damage to the wafer's backside edge becomes more severe, impacting subsequent processes and wafer shipments. Summary of the Invention

[0004] The present application provides a vacuum suction cup, a glue coating and developing device and a control method thereof, which solves the problem of damage to the back edge of the wafer caused by the developer in the existing back-end process.

[0005] To achieve the above objectives, this application adopts the following technical solutions:

[0006] In the first aspect, an embodiment of the present application provides a vacuum suction cup. The outer surface of the vacuum suction cup includes a first disk surface and a second disk surface relative to each other, and a side wall located between the first disk surface and the second disk surface. A vacuum channel and a jet channel are formed in the vacuum suction cup. The inlet of the vacuum channel is located on the first disk surface of the vacuum suction cup. In addition, the vacuum channel is used to communicate with a vacuum pumping device. Therefore, when the vacuum pumping device is turned on, the workpiece can be adsorbed on the first disk surface of the vacuum suction cup through the vacuum channel. The outlet direction of the above-mentioned jet channel is toward the radial outside of the vacuum suction cup, and is used to spray toward the radial outside of the first disk surface. In addition, the jet channel is used to communicate with an air supply device. Therefore, when the air supply device is turned on, the jet channel can spray toward the radial outside of the first disk surface on the vacuum suction cup.

[0007] The vacuum suction cup of the present application can be applied to a coating and developing device (the above-mentioned workpiece is a wafer). When the wafer undergoes a developing process, the vacuum pumping device and the gas supply device can both be turned on. The vacuum pumping device can tightly adsorb the wafer on the first disk surface through a vacuum channel. Since the area of ​​the wafer is usually larger than the area of ​​the vacuum suction cup, the central area of ​​the wafer back can contact the first disk surface, while the edge area of ​​the wafer back is located radially outward of the first disk surface. The gas supplied by the gas supply device is sprayed toward the radial outward of the first disk surface on the vacuum suction cup through the jet channel. The ejected gas can block the developer that overflows from the front of the wafer and flows to the edge area of ​​the wafer back. In addition, by controlling the parameters of the ejected gas (such as the jet flow rate, outlet shape or spacing of the jet channel, etc.), an air curtain (air knife) can be formed radially outward of the first disk surface, thereby effectively preventing the developer from causing damage at the edge of the back of the wafer. Furthermore, compared to installing a knife-edge ring radially outwardly of the vacuum chuck, the coating and developing equipment used in this application does not require regular replacement of the knife-edge ring to prevent dirt accumulation, thus reducing consumables costs. Furthermore, contact between the developer and the wafer back can be completely avoided.

[0008] Based on the above structure, in some embodiments of the present application, the above-mentioned jet channel includes a jet hole, which is opened on the side wall of the vacuum suction cup. In addition, the outlet direction of the jet hole can be perpendicular to the side wall of the vacuum suction cup. At this time, the gas ejected from the jet hole cannot be too fast, otherwise less gas will reach the edge of the back of the crystal. The gas ejected from the jet hole cannot be too slow, otherwise the gas reaching the edge of the back of the crystal cannot block the developer flowing to the edge area of ​​the back of the crystal. Therefore, a flow control valve can be set between the jet channel and the gas supply equipment, and the flow control valve can be used to adjust the gas ejected from the jet hole to be within a suitable flow rate range.

[0009] Alternatively, the outlet direction of the air jet hole can be tilted toward the first disk surface. Furthermore, the opening angle of the air jet hole must match the diameter of the wafer to ensure that the gas ejected from the air jet hole can provide reliable protection at the very edge of the wafer backside. Of course, the gas flow rate of the air jet hole must also be appropriate to ensure effective blocking of the developer solution.

[0010] Furthermore, the air jet channel may include one or more of the aforementioned air jet holes, which is not a limitation of this application. In some embodiments of the present application, the air jet channel includes multiple air jet holes, which are spaced apart around the sidewall of the vacuum chuck. The multiple air jet holes can all emit air radially outward around the vacuum chuck, forming an air curtain around the entire periphery of the wafer, effectively protecting the wafer backside.

[0011] In addition, in order to ensure that the jet channel can form an air curtain, in some embodiments of the present application, the jet flow rate of the jet channel is 1-200 L / min.

[0012] In addition to the above-mentioned jet holes, a connecting channel connected to the air supply device is also provided in the jet channel. There can be multiple arrangements for the connection channel in the vacuum suction cup. In some embodiments of the present application, the above-mentioned jet channel includes an annular jet channel and a jet connection channel, and the annular jet channel is arranged in an area near the edge of the vacuum suction cup and is connected to the jet hole. The jet connection channel is arranged in the vacuum suction cup. In addition, the jet connection channel is used to connect the annular jet channel with the air supply device. The arrangement of the annular jet channel in an area near the edge of the vacuum suction cup will not affect the arrangement of the vacuum channel, and the internal space utilization rate of the vacuum suction cup is relatively high.

[0013] The vacuum channel can be arranged in various ways. In some embodiments of the present application, the vacuum channel includes multiple annular vacuum grooves, each of which is formed on the first surface of the vacuum chuck. Furthermore, the multiple annular vacuum grooves are arranged sequentially from the inside out and spaced apart. This creates a large suction area on the entire first surface of the vacuum chuck, providing stable and reliable suction to the wafer.

[0014] Furthermore, the vacuum channel also includes a vacuum connection channel, which is disposed within the vacuum cup and communicates with the plurality of annular vacuum grooves. The vacuum connection channel is used to communicate with vacuum equipment. The vacuum channel can be independent of the air jet channel and does not affect each other.

[0015] In a second aspect, the embodiments of the present application also include a coating and developing device, which comprises a rack and the vacuum chuck described above. The vacuum chuck is arranged in the rack. The vacuum chuck can adsorb a workpiece, for example, a wafer. The gas injection channel in the vacuum chuck can inject gas to prevent the developing solution from flowing to the back of the workpiece. Since the vacuum chuck in the coating and developing device of the embodiments of the present application has the same structure as the vacuum chuck described above, both can solve the same technical problem and obtain the same technical effect, and thus will not be described here again.

[0016] In addition, the coating and developing device described above further comprises a driving device, which can be in transmission connection with the vacuum chuck. The driving device is used to drive the rotation of the vacuum chuck. Thus, the workpiece such as a wafer on the vacuum chuck can rotate with the vacuum chuck to perform corresponding developing processes, such as a pre-wetting stage, a back rinse stage, a developing solution dispensing stage, and a deionized water rinsing stage.

[0017] In a third aspect, the embodiments of the present application include a control method of the coating and developing device described above. The control method of the coating and developing device comprises the following steps: controlling the opening and closing of the gas injection channel according to the rotation speed of the driving device. The rotation speed of the driving device corresponds to the rotation speed of the vacuum chuck, that is, the opening and closing of the gas injection channel is controlled according to the rotation speed of the vacuum chuck. For example, if the rotation speed of the driving device is lower than a preset speed threshold, the gas injection channel is controlled to be in communication with the gas supply device. If the rotation speed of the driving device exceeds the preset speed threshold, the gas injection channel is controlled to be disconnected from the gas supply device. Thus, in the stage with a low rotation speed in the developing process (for example, the pre-wetting stage, the standing stage, and part of the low-speed period in the developing solution dispensing stage and the deionized water rinsing stage), the gas injection channel is opened to prevent the developing solution from damaging the wafer back. Thus, the influence on the exhaust system of the coating and developing device can be reduced, and the energy consumption is also low.

[0018] In some embodiments of the present application, before the control of the opening and closing of the gas injection channel according to the rotation speed of the driving device described above, the control method of the coating and developing device further comprises: obtaining a signal indicating that the developing solution starts to be dispensed. When the developing solution is not dispensed, even if the rotation speed of the driving device is low, the possibility of damage to the wafer back is low. Therefore, the control method of the embodiments of the present application controls the gas injection channel to be in communication with the gas supply device only when the developing solution has been dispensed and the rotation speed of the driving device is low. Thus, the influence on the exhaust system of the coating and developing device is further reduced, and the energy consumption is further reduced.

[0019] In some embodiments of the present application, before controlling the opening and closing of the jet channel based on the rotational speed of the drive device, the control method for the aforementioned coating and developing equipment further includes: obtaining a signal to initiate deionized water spraying. When the developer and deionized water are not being sprayed, the likelihood of damage to the wafer back is low, even at a low rotational speed of the drive device. Therefore, the control method of an embodiment of the present application controls the jet channel to communicate with the air supply device when deionized water is being sprayed and the rotational speed of the drive device is low. This further reduces the impact on the exhaust system of the coating and developing equipment, further reducing energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be described below.

[0021] Figure 1 This is a schematic structural diagram of the glue coating and developing equipment according to an embodiment of the present application;

[0022] Figure 2 (a), (b), (c), and (d) are schematic diagrams of the change of wafer from front-end process to back-end process;

[0023] Figure 3 It is a structural schematic diagram of a gluing and developing device in the related art;

[0024] Figure 4 (a), (b), and (c) are schematic diagrams showing the changes in the scraping of developer on the wafer by the blade-shaped ring;

[0025] Figure 5a This is a schematic longitudinal cross-sectional view of a vacuum suction cup according to an embodiment of the present application;

[0026] Figure 5b Schematic diagram of gas flow in a longitudinal cross section of a vacuum chuck according to an embodiment of the present application;

[0027] Figure 6 This is a schematic diagram of the three-dimensional structure of the vacuum suction cup according to an embodiment of the present application;

[0028] Figure 7 This is a schematic transverse cross-sectional view of a vacuum suction cup according to an embodiment of the present application;

[0029] Figure 8 This is a flow chart of a control method for a coating and developing device according to an embodiment of the present application;

[0030] Figure 9 This is a second flow chart of a control method for a coating and developing device according to an embodiment of the present application;

[0031] Figure 10 This is the third flow chart of the control method of the coating and developing equipment in the embodiment of the present application.

[0032] Reference Signs:

[0033] 1000 - Coating and developing apparatus; 1 - Frame; 2 - Driving device; 3 - Vacuum chuck; 3a - First disc surface; 3b - Second disc surface; 3c - Side wall; 31 - Vacuum passage; 310 - Inlet; 311 - Annular vacuum groove; 312 - Vacuum connection passage; 32 - Air jet passage; 320 - Outlet; 321 - Annular air jet passage; 322 - Air jet connection passage; 3221 - First air jet connection passage; 3222 - Second air jet connection passage; 323 - Air jet hole; 4 - Radiating flange; 5 - Backside rinsing nozzle; 6 - Drain pipe; 7 - Exhaust pipe; 08 - Knife-shaped ring; 2000 - Wafer; 2000a - Front surface; 2000b - Back surface; 2001 - Substrate; 2002 - Dielectric layer; 2003 - Active layer; 3000 - Oxide film; 4000 - Developing solution. DETAILED DESCRIPTION

[0034] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings.

[0035] Hereinafter, the terms "first", "second", and the like are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0036] In addition, in the present application, the orientation terms such as "upper", "lower", "left", "right", "horizontal", and "vertical" are defined with respect to the orientation of the components shown in the drawings, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and can be changed accordingly according to the change of the orientation of the components placed in the drawings.

[0037] In the present application, unless otherwise explicitly specified and limited, the term "connection" should be understood broadly, for example, "connection" can mean mechanical connection, physical connection. It can be fixed connection, or detachable connection, or integral; it can be directly connected, or indirectly connected through intermediate media. It can also be understood as physical contact and electrical conduction of components, or as a form of connection between different components in the circuit structure through the physical entity of the PCB copper foil or wire that can transmit electrical signals.

[0038] This application provides a coating and developing device. In the photolithography process, this coating and developing device is a crucial piece of equipment that works in conjunction with a photolithography machine. The coating and developing device first coats photoresist onto a wafer. Then, the photolithography machine exposes the photoresist on the wafer. After exposure, the coating and developing device then develops the pattern on the wafer.

[0039] Figure 1 A specific embodiment of the coating and developing device of the present application is shown. Figure 1 The coating and developing device 1000 includes a frame 1, a drive device 2, and a vacuum chuck 3. The drive device 2 and the vacuum chuck 3 are both mounted within the frame 1. The drive device 2 can be a spin motor. The vacuum chuck 3 is in transmission connection with the drive device 2. The drive device 2 can drive the vacuum chuck 3 to rotate. The vacuum chuck 3 can secure a workpiece, such as a wafer 2000, by suction.

[0040] In addition to the above-mentioned components, the coating and developing device 1000 of the embodiment of the present application may also include a heat dissipation flange 4, a backside rinse nozzle 5, a drain pipe 6, and an exhaust pipe 7. The heat dissipation flange 4 and the backside rinse nozzle 5 are both arranged in the frame 1. The heat dissipation flange 4 is arranged between the vacuum suction cup 3 and the drive device 2. The heat dissipation flange 4 can dissipate heat for the drive device 2. The backside rinse nozzle 5 is used to spray solvent. Under the action of centrifugal force, the solvent sprayed by the backside rinse nozzle 5 can clean the back side of the wafer 2000. One end of the drain pipe 6 is opened in the frame 1, and the other end of the drain pipe 6 is opened to the outside. The drain pipe 6 can discharge liquids such as developer and deionized water used in the development process to the outside. One end of the exhaust pipe 7 is opened in the frame 1, and the other end of the exhaust pipe 7 is opened to the outside. The exhaust pipe 7 can discharge exhaust gas during the development process to the outside.

[0041] It can be understood that the coating and developing device 1000 of the embodiment of the present application may also include other components such as a developer injection pipe, a deionized water injection pipe, and various valves, and the present application does not limit this.

[0042] Take the coating and developing device 1000 for processing wafer 2000 as an example. Figure 2 During the thin film deposition process in the front-end process, the oxide film 3000 is deposited not only on the front side 2000a of the wafer 2000 but also on the back side (referred to as the "wafer back") 2000b of the wafer 2000. The oxide film 3000 on the wafer back 2000b serves as a protective layer to prevent damage to the wafer back 2000b during subsequent processes. Figure 2The wafer 2000 shown in (a) includes a substrate 2001 and a dielectric layer 2002 that are stacked.

[0043] However, when preparing the optical forming process of the metal wiring layer and the through-hole layer in the back-end process, a back cleaning process is required to remove the dirt on the back of the wafer 2000b. The hydrofluoric acid HF or nitric acid HNO3 used in the back cleaning process will react with the oxide layer 3000 on the back of the wafer 2000b. Figure 2 As shown in (b) to (c), after multiple backwash processes, the oxide film 3000 on the backside 2000b is removed. Figure 2 The wafer 2000 in (b) and (c) includes a substrate 2001 and an active layer 2003 that are stacked, and the active layer 2003 includes a dielectric material and a metal material.

[0044] Afterwards, when the back-washed wafer 2000 enters the developing process of the photolithography process, the developer 4000 easily overflows from the front side 2000a of the wafer 2000 to the back side 2000b of the wafer 2000. When the exposed substrate 2001 contacts the developer 4000, a chemical reaction will occur, causing damage S on the edge of the wafer back side 2000b, such as Figure 2 As shown in (d), as the number of back cleaning and photoforming increases, the damage S at the edge of the wafer back 2000b becomes more serious, which in turn affects subsequent processes and wafer shipments.

[0045] The above problems can be solved by Figure 3 The coating and developing device 1000 shown is improved. Figure 3 The dashed arrow in the middle indicates the flow direction of liquid or gas. Figure 3 The frame 1 of the coating and developing device 1000 is provided with a blade-shaped ring 08. The blade-shaped ring 08 is installed radially outside the vacuum chuck 3. Taking the wafer 2000 with a thickness of 775 μm as an example, Figure 4 As shown, the lateral distance S1 between the blade-shaped ring 08 and the edge of the wafer 2000 can be 5-10 mm, and the longitudinal distance S2 between the blade-shaped ring 08 and the wafer 2000 can be 1 mm. When the wafer 2000 is adsorbed on the vacuum chuck 3, the longitudinal distance between the wafer 2000 and the blade-shaped ring 08 is very small, and the lateral distance S2 between the blade-shaped ring 08 and the wafer 2000 is also small. Figure 4 As shown in (a) to (b), when the photoforming process reaches the static stage of the developer 4000, the developer 4000 will flow along the edge of the front side 2000a of the wafer 2000 toward the back side 2000b. The blade-shaped ring 08 can limit the developer 4000 from flowing toward the inside of the back side 2000b. Figure 4After the development process is completed, the driving device 2 drives the vacuum chuck 3 to rotate. The developer 4000 on the front side 2000a and the back side 2000b of the wafer 2000 is thrown away by the centrifugal force.

[0046] The blade-shaped ring 08 can significantly reduce the amount of developer 4000 flowing toward the wafer back 2000b, thereby reducing the burden of subsequent cleaning. However, the blade-shaped ring 08 must be replaced regularly to prevent accumulation of dirt. Furthermore, it is impossible to completely prevent the developer 4000 from contacting the wafer back 2000b within a few micrometers of the edge.

[0047] Therefore, the embodiment of the present application proposes a structural improvement scheme of the glue coating and developing device 1000, which can solve all the above problems at the same time. This structural improvement is a structural improvement of the vacuum suction cup 3. Figure 5a 、 Figure 5b and Figure 6 The outer surface of the vacuum suction cup 3 of the embodiment of the present application includes a first disk surface 3a, a second disk surface 3b and a side wall 3c. The first disk surface 3a is opposite to the second disk surface 3b. The side wall 3c is located between the first disk surface 3a and the second disk surface 3b. A vacuum channel 31 is formed in the vacuum suction cup 3, and the inlet 310 of the vacuum channel 31 is located on the first disk surface 3a of the vacuum suction cup 3. In addition, the vacuum channel 31 is used to communicate with the vacuum pumping equipment. Since the area of ​​the wafer 2000 is usually larger than the area of ​​the vacuum suction cup 3, when the vacuum pumping equipment is turned on, the wafer 2000 can be adsorbed on the first disk surface 3a of the vacuum suction cup 3 through the vacuum channel 31. The central area of ​​the wafer back 2000b can be in contact with the first disk surface 3a. The edge area of ​​the wafer back 2000b is located radially outside the first disk surface 3a.

[0048] Furthermore, in the embodiment of the present application, an air jet channel 32 is additionally provided within the vacuum suction cup 3. The outlet 320 of the air jet channel 32 is oriented radially outward of the vacuum suction cup 3 (radial direction is the X-axis direction in the figure, and axial direction is the Z-axis direction in the figure) and is capable of ejecting air radially outward of the first disk surface 3a. Furthermore, the air jet channel 32 is configured to communicate with an air supply device. Therefore, when the air supply device is turned on, the air jet channel 32 can eject air radially outward of the first disk surface 3a on the vacuum suction cup 3. Figure 5b The two dotted arrows represent the flow directions of the gases in the vacuum channel 31 and the jet channel 32 respectively.

[0049] When the wafer 2000 is undergoing a development process, both the vacuum pumping equipment and the gas supply equipment can be turned on. Figure 5bAs shown, the vacuum pumping equipment can tightly attach the wafer 2000 to the first plate 2000a via the vacuum channel 31. The central region of the wafer back 2000b can contact the first plate 2000a, while the edge region of the wafer back 2000b is located radially outward of the first plate 2000a. Gas supplied by the gas supply equipment is ejected radially outward of the first plate 3a on the vacuum chuck 3 via the jet channel 32. The ejected gas can block the developer 4000 from overflowing from the front side 2000a of the wafer 2000 and flowing toward the edge region of the wafer back 2000b. Furthermore, by controlling the parameters of the ejected gas (such as the jet flow rate, outlet shape, or outlet spacing of the jet channel 3), an air curtain can be formed, thereby effectively preventing the developer 4000 from damaging the edge of the back side 2000b of the wafer 2000. Furthermore, compared to installing a blade-shaped ring 08 radially outward of the vacuum chuck 3, the coating and developing device 1000 used in this application does not require regular replacement of the blade-shaped ring 08 to prevent accumulation of dirt, thereby reducing consumables costs. Furthermore, contact between the developer 4000 and the wafer back 2000b can be completely avoided.

[0050] It should be noted that the jet channel 32 can be connected to the gas supply device via an external pipeline. The gas ejected from the jet channel 32 can be clean air, nitrogen, argon, or any other suitable gas, and this application does not impose any restrictions on this. Therefore, the gas supply device can be an air compressor or a gas storage device.

[0051] Furthermore, the velocity of the gas ejected from the jet channel 32 cannot be too low, otherwise an air curtain cannot be formed. Therefore, in some embodiments of the present application, the jet flow rate of the jet channel 32 is 1-200 L / min to ensure that the jet channel 32 can form an air curtain. For example, a flow control valve is installed on the pipeline between the jet channel 32 and the air supply device. The flow control valve can adjust the jet flow rate of the jet channel 3.

[0052] There are many ways to arrange the jet channel 32 in the vacuum cup 3. Figure 5a and Figure 7The jet channel 32 includes an annular jet channel 321, a jet connection channel 322, and a jet hole 323. The annular jet channel 321 is arranged in an area near the edge of the vacuum suction cup 3. The jet connection channel 322 is arranged in the vacuum suction cup 3. In addition, the jet connection channel 322 can connect the annular jet channel 321 with the air supply device. The jet hole 323 has a first opening and a second opening relative to each other. The first opening of the jet hole 323 is connected to the annular jet channel 321, and the second opening of the jet hole 323 faces the radial outside of the vacuum suction cup 3 and is used to spray toward the radial outside of the first disk surface 2000a. That is, the second opening of the jet hole 323 is the outlet 320 of the jet channel 32. The annular jet channel 321 is arranged in an area near the edge of the vacuum suction cup 3 without affecting the vacuum channel 31 arranged in the central area of ​​the vacuum suction cup 3, and the internal space utilization rate of the vacuum suction cup 3 is high.

[0053] in, Figure 5a The illustrated jet connection channel 322 includes a first jet connection channel 3221 and a second jet connection channel 3222. The first jet connection channel 3221 extends radially of the vacuum chuck 3 and has a circular transverse cross-section (parallel to the XY plane). The second jet connection channel 3222 extends axially of the vacuum chuck 3. The upper end of the second jet connection channel 3222 communicates with the first jet connection channel 3221, and the lower end of the second jet connection channel 3222 is located on the second disc surface 3b.

[0054] Furthermore, in some embodiments of the present application, reference is made to Figure 5a The jet hole 323 can be opened on the side wall 3c of the vacuum chuck 3. In addition, the outlet direction of the jet hole 323 can be as follows: Figure 5a As shown, the nozzle 323 is perpendicular to the sidewall 3c of the vacuum chuck 3. At this time, the gas ejected from the nozzle 323 cannot be too fast, otherwise less gas will reach the edge of the wafer back 2000b. The gas ejected from the nozzle 323 cannot be too slow, otherwise the gas reaching the edge of the wafer back 2000b will not block the developer 4000 flowing to the edge of the wafer back 2000b. Therefore, a flow control valve between the nozzle channel 32 and the gas supply device is required to adjust the gas ejected from the nozzle 323 to an appropriate flow rate range.

[0055] It is understood that the air injection hole 323 can be located on the side wall 3c of the vacuum chuck 3 near the first plate surface 3a. Therefore, the outlet 320 of the air injection hole 323 is closer to the wafer back 2000b, and a smaller gas flow rate can be used to block the liquid from flowing toward the wafer back 2000b.

[0056] Alternatively, the outlet direction of the air jet hole 323 can be tilted toward the first disk surface 3a. Furthermore, the outlet angle of the air jet hole 323 must match the diameter of the wafer 200a to ensure that the gas ejected from the air jet hole 323 can reliably protect the outermost edge of the wafer back 2000b. Of course, the gas ejected from the air jet hole 323 must also have an appropriate flow rate to ensure a good barrier effect on the developer 4000.

[0057] In addition, the jet hole 323 of the jet channel 32 may be one or more, and the present application does not limit this. In some embodiments of the present application, for example Figure 6 As shown, the jet channel 32 further includes a plurality of jet holes 323 that are in communication with the annular jet channel 321. The plurality of jet holes 323 are spaced apart around the side wall 3c of the vacuum chuck 3. Thus, an air curtain is formed around the entire radial circumference of the vacuum chuck 3.

[0058] Furthermore, the multiple air jet holes 323 can be located at the same height on the sidewall 3c of the vacuum chuck 3, forming an annular ring. Alternatively, the multiple air jet holes 323 can be located at different heights on the sidewall 3c of the vacuum chuck 3, forming multiple annular rings. In the latter case, the width of the annular air jet channel 321 can be slightly smaller than the thickness of the vacuum chuck 3, to facilitate communication with the multiple air jet holes 323 at different heights.

[0059] In addition to the aforementioned method of forming an annular air curtain with multiple air jet holes 323, the air jet channel 32 may also include only one annular narrow slit-shaped air jet hole 323. The air jet hole 323 diffracts 360° in the radial direction of the vacuum chuck 3 to also form an annular air curtain.

[0060] The above is mainly an explanation of the jet channel 32. There are also many ways to set up the vacuum channel 31 in the vacuum suction cup 3. In some embodiments of the present application, refer to Figure 5a and Figure 7 , the above-mentioned vacuum channel 31 includes a plurality of annular vacuum grooves 311 and a vacuum connection channel 312. The plurality of annular vacuum grooves 311 are all opened on the first disk surface 3a of the vacuum suction cup 3. Moreover, the plurality of annular vacuum grooves 311 are arranged in sequence from the inside to the outside. There is a gap between two adjacent annular vacuum grooves 311. The vacuum connection channel 312 is arranged in the vacuum suction cup 3 and is connected to the plurality of annular vacuum grooves 311. The vacuum connection channel 312 is used to connect with the vacuum equipment. Thus, a large adsorption area is formed on the first disk surface 3a of the entire vacuum suction cup 3, and the suction force on the wafer 2000 is stable and reliable. Moreover, the vacuum channel 31 can be independent of the jet channel 32 and do not affect each other.

[0061] Figure 5aThe illustrated vacuum connection channel 312 includes a first vacuum connection channel 3121 and a second vacuum connection channel 3122. The first vacuum connection channel 3121 extends radially along the vacuum suction cup 3. The transverse cross-section of the first vacuum connection channel 3121 (the transverse cross-section is parallel to the XY plane) can be circular, so that the first vacuum connection channel 3121 is connected to the multiple annular vacuum grooves 311. The second vacuum connection channel 3122 extends axially along the vacuum suction cup 3. The upper end of the second vacuum connection channel 3122 is connected to the first vacuum connection channel 3121. The lower end of the second vacuum connection channel 3122 is located on the second disk surface 3b.

[0062] Furthermore, the coating and developing device 1000 of the embodiment of the present application may have multiple stages as shown in Table 1 during the development process.

[0063] Table 1 Comparison of various stages in the development process and the rotation speed of the driving device 2

[0064] Development process Rotation speed / rmp Pre-wetting stage ＜100 Developer spraying stage 100-2000 Static stage 0 Deionized water stage 100-3000 Back cleaning stage 1000-2000

[0065] Since the rotation speed of the driving device 2 that drives the vacuum suction cup 3 is different in the above-mentioned multiple stages. When the rotation speed of the driving device 2 is high, the centrifugal force can directly throw out the liquid flowing toward the wafer back 2000b without flowing onto the wafer back 2000b. Therefore, it is only necessary to control the jet channel 3 of the vacuum suction cup 3 to be connected to the air supply device when the rotation speed of the driving device 2 is low, and the jet channel 3 ejects gas to form an air curtain to blow out the liquid flowing toward the wafer back 2000b. Therefore, the embodiment of the present application also includes a control method for the above-mentioned glue coating and developing device 1000. The control method comprises the following steps:

[0066] S200: According to the rotation speed of the driving device 2, the jet passage 3 (and the air supply device) is controlled to be on and off.

[0067] For example, Figure 8 As shown, if the speed V of the drive device 2 i If the speed V of the driving device 2 is lower than (including lower than and equal to) the preset speed threshold V0, the jet channel 3 is controlled to be connected to the air supply device. i When the speed exceeds (is greater than) the preset speed threshold V0, the jet channel 3 is controlled to be disconnected from the air supply device.

[0068] Therefore, during the low-speed stages of the development process (such as the pre-wetting stage, the rest stage, and some low-speed periods during the developer spraying and deionized water rinsing stages), the air jet channel 3 is opened to form an air curtain to prevent the developer 4000 from damaging the wafer back 2000b. This can reduce the impact on the exhaust system of the coating and developing equipment 1000 and reduce energy consumption.

[0069] Controlling the connection between the jet channel 3 and the air supply device can specifically be achieved by opening or closing a flow control valve on the pipeline between the jet channel 3 and the air supply device. Furthermore, the control method can also adjust the opening of the flow control valve to adjust the jet flow rate based on the speed range of the drive device 2. Thus, the centrifugal force and the air curtain act together to prevent the developer 4000 from damaging the wafer back 2000b.

[0070] Furthermore, for the portion of the development process where the developer 4000 is not injected, there is no liquid in the coating and developing device 1000 that may damage the wafer back 2000b. Therefore, there is no need to open the air curtain. Figure 9 Before the above S200, the control method further includes:

[0071] S101: Obtaining a signal for starting the spraying of the developer 4000.

[0072] Therefore, after receiving the signal for the developer 4000 to start spraying (such as the control valve on the developer 4000 injection pipe is opened), if the speed V of the driving device 2 is i If the speed V of the driving device 2 is lower than the preset speed threshold V0, the jet channel 3 is controlled to be connected to the air supply device. i When the speed exceeds the preset threshold V0, the jet channel 3 is disconnected from the air supply device. The control method of the embodiment of the present application opens the jet channel 32 in stages after the developer 4000 begins to spray, which can further reduce the impact on the exhaust system of the coating and developing device 1000 and has lower energy consumption.

[0073] It should be noted that, since the developer 4000 is not sprayed, the possibility of the wafer back 2000b being damaged is low even if the rotation speed of the driving device 2 is low. Therefore, before the developer 4000 is sprayed, the jet channel 3 is disconnected from the air supply device.

[0074] In addition, the deionized water used in the development process may also damage the wafer back 2000b. Therefore, in some embodiments of the present application, reference is made to Figure 10 , the above control method further includes:

[0075] S102: Obtain a signal for starting to spray deionized water.

[0076] Therefore, after obtaining the signal for starting to spray deionized water (such as the control valve on the deionized water injection pipe is opened), if the speed V of the driving device 2 is i If the speed V of the driving device 2 is lower than the preset speed threshold V0, the jet channel 3 is controlled to be connected to the air supply device. iWhen the speed exceeds the preset threshold V0, the jet channel 3 is disconnected from the air supply device. The control method of the embodiment of the present application opens the jet channel 32 in stages after the deionized water starts to spray, which can also further reduce the impact on the exhaust system of the coating and developing device 1000 and has lower energy consumption.

[0077] It should be noted that, since the possibility of the wafer back 2000b being damaged is low even if the rotation speed of the driving device 2 is low when deionized water and developer 4000 are not sprayed, the jet channel 3 and the air supply device are also kept closed before deionized water is sprayed.

[0078] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A vacuum suction cup, characterized in that: The vacuum suction cup has a first surface; the vacuum suction cup is formed with: A vacuum channel, the vacuum channel being connected to a vacuum pumping device, and the inlet of the vacuum channel being located on the first disk surface of the vacuum suction cup; The jet channel is used to communicate with the air supply device; the outlet direction of the jet channel is toward the radial outside of the vacuum suction cup, and is used to spray air toward the radial outside of the first disk surface.

2. The vacuum suction cup according to claim 1, wherein: The jet channel comprises: The air jet hole is opened on the side wall of the vacuum suction cup, and the outlet direction of the air jet hole is perpendicular to the side wall of the vacuum suction cup or inclined toward the direction close to the first disk surface.

3. The vacuum suction cup according to claim 2, wherein: The jet channel includes a plurality of jet holes, and the plurality of jet holes are spaced apart and arranged around a side wall of the vacuum suction cup.

4. The vacuum suction cup according to claim 2 or 3, characterized in that: The jet channel also includes: An annular jet channel, wherein the annular jet channel section is arranged in an area near the edge of the vacuum suction cup and is connected to the jet hole.

5. The vacuum suction cup according to any one of claims 1 to 4, characterized in that: The vacuum channel comprises: A plurality of annular vacuum grooves are provided on the first disk surface of the vacuum suction cup and are sequentially arranged from the inside to the outside with intervals therebetween.

6. The vacuum suction cup according to any one of claims 1 to 5, characterized in that: The jet flow rate of the jet channel is 1-200 L / min.

7. A coating and developing device, characterized in that: include: frame; The vacuum suction cup according to any one of claims 1 to 6; The vacuum suction cup is arranged in the frame and is used for adsorbing the workpiece.

8. The gum coating and developing device according to claim 7, characterized in that: The glue coating and developing device also includes: A driving device is connected to the vacuum suction cup in a transmission manner and is used to drive the vacuum suction cup to rotate.

9. A method for controlling the coating and developing device according to claim 8, comprising the following steps: According to the rotation speed of the driving device, the jet channel is controlled to be on and off.

10. The control method of the gum coating and developing device according to claim 9, characterized in that: Before controlling the on-off of the jetting channel according to the rotation speed of the driving device, the control method of the coating and developing device further includes: Get the signal to start spraying the developer.

11. The control method of the gum coating and developing device according to claim 9 or 10, characterized in that: Before controlling the on-off of the jetting channel according to the rotation speed of the driving device, the control method of the coating and developing device further includes: Get the signal to start spraying deionized water.

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