High-temperature-resistant BOPP capacitor film and preparation method and application thereof

Abstract

The invention discloses a high-temperature-resistant BOPP capacitor film and a preparation method and application thereof.The high-temperature-resistant BOPP capacitor film is prepared from polypropylene and organic semiconductor master batch, and the organic semiconductor master batch comprises a conjugated organic semiconductor polymer and a cyclic olefin polymer; the conjugated organic semiconductor polymer and the cyclic olefin polymer are added into the polypropylene to prepare the high-temperature-resistant BOPP capacitor film, the high-temperature-resistant BOPP capacitor film is used for preparing a thin-film capacitor, and the high-temperature-resistant performance of the thin-film capacitor can be remarkably improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of high-temperature-resistant BOPP capacitor films, and particularly relates to a high-temperature-resistant BOPP capacitor film and a preparation method and application thereof. BACKGROUND

[0002] A thin film capacitor is an important basic electronic component and is widely used in the electronic, home appliance, communication, power and other industries.

[0003] At present, the most commonly used thin film dielectric in the thin film capacitor is BOPP, but the biaxially oriented polypropylene film has poor high-temperature resistance, and the existing polypropylene film capacitor has an upper limit of about 105 DEG C in use temperature. When the operating temperature of the capacitor exceeds 85 DEG C, most of the performance of the film decreases, such as the breakdown strength decreases sharply, the dielectric loss increases sharply, and the capacitor is prone to operating failure, which affects the safe and stable operation of the entire device system. In recent years, the development of new energy fields such as photovoltaic power generation, wind power generation, especially new energy vehicles, has put forward higher requirements for the thin film capacitor, such as miniaturization, high-temperature resistance, large capacity and the like.

[0004] In the prior art, the heat resistance of the polypropylene film capacitor is improved by adding a cyclic olefin copolymer or inorganic particles and the like to the polypropylene. However, after the inorganic particles are added to the polypropylene to form a film, the dielectric constant of the inorganic particles and the polypropylene is quite different, which can increase the local electric field and reduce the electrical strength of the film, greatly increase the dielectric loss, and seriously affect the dielectric properties of the capacitor film. In addition, the inorganic particles have poor dispersibility in the polypropylene system and are unevenly distributed, which further reduces the dielectric properties of the polypropylene film and affects the use of the polypropylene film.

[0005] After the cyclic olefin copolymer is added to the polypropylene to form a film, although the polymer capacitor film does not have physical defects, the addition of a small amount of cyclic olefin copolymer can only slightly improve the temperature resistance of the capacitor film, and the temperature resistance of the polypropylene film is limited. If the temperature resistance of the thin film capacitor needs to be greatly improved, the amount of the cyclic olefin copolymer needs to be more than 20%, and the addition of a large amount of the cyclic olefin copolymer can greatly reduce the film-forming properties of the material. This is because the cyclic olefin copolymer has poor compatibility with the polypropylene, the fiber stretching affects the subsequent biaxial stretching, and the phase separation gradually occurs during long-term use, which reduces the heat resistance of the material and affects the product quality. Therefore, it is an urgent problem to effectively reduce the amount of the cyclic olefin copolymer and effectively improve the thin film capacitor. SUMMARY

[0006] In view of the above deficiencies in the prior art, the present application provides a high-temperature-resistant BOPP capacitor film, which is prepared by adding conjugated organic semiconductor polymer and cyclic olefin polymer into polypropylene, and is used for preparing a thin-film capacitor, thereby significantly improving the high-temperature resistance of the thin-film capacitor.

[0007] The present application aims to provide a high-temperature-resistant BOPP capacitor film, and the material for preparing the high-temperature-resistant BOPP capacitor film comprises polypropylene and an organic semiconductor masterbatch, wherein the organic semiconductor masterbatch comprises conjugated organic semiconductor polymer and cyclic olefin polymer.

[0008] In some embodiments of the present application, the amount of the organic semiconductor masterbatch is 5-15% of the high-temperature-resistant BOPP capacitor film in terms of mass percentage.

[0009] In some embodiments of the present application, the amount of the conjugated organic semiconductor polymer is 0.1-1% of the organic semiconductor masterbatch in terms of mass percentage.

[0010] In some embodiments of the present application, the cyclic olefin polymer is selected from at least one of COC, COP and CBC.

[0011] In some embodiments of the present application, the conjugated organic semiconductor polymer is selected from poly(3-hexylthiophene) or a thiophene copolymer.

[0012] In some embodiments of the present application, the thiophene copolymer is selected from a copolymer having any one of the following structures:

[0013] 、 、

[0014] wherein the number average molecular weight is 4.7-17.3 KDa.

[0015] In some embodiments of the present application, the molar percentage of hexylthiophene segment of the thiophene copolymer in the polythiophene segment is 80-97.1%.

[0016] In some embodiments of the present application, the isotacticity of the thiophene copolymer is ≥80%.

[0017] The present application further aims to provide a preparation method of the high-temperature-resistant BOPP capacitor film, which comprises the following steps:

[0018] S1. crushing the cyclic olefin polymer into powder, mixing the cyclic olefin polymer powder and a solvent, heating and dissolving to obtain a cyclic olefin polymer solution;

[0019] S2. mixing the conjugated organic semiconductor polymer and the solvent, heating to dissolve, to obtain a conjugated organic semiconductor polymer solution;

[0020] S3. mixing the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, adding a poor solvent, precipitating, to obtain an organic semiconductor masterbatch;

[0021] S4. blending the organic semiconductor masterbatch with polypropylene powder, melt extruding, to obtain a polypropylene composite material;

[0022] S5. processing the polypropylene composite material into a plastic melt, extrusion casting, biaxial stretching, to obtain a high-temperature-resistant BOPP capacitor film.

[0023] In some embodiments of the present application, in S1, the solvent is selected from toluene.

[0024] In some embodiments of the present application, in S1, the heating temperature is 120-160℃.

[0025] In some embodiments of the present application, in S2, the solvent is selected from toluene.

[0026] In some embodiments of the present application, in S2, the heating temperature is 120-160℃.

[0027] In some embodiments of the present application, in S3, the poor solvent is selected from at least one of methanol and ethanol.

[0028] In some embodiments of the present application, in S3, the volume ratio of the homogeneous solution to the poor solvent is 1:100-500.

[0029] In some embodiments of the present application, in S4, the melt extrusion temperature is 180-230℃.

[0030] In some embodiments of the present application, in S5,

[0031] A further object of the present application is to provide a thin film capacitor, wherein the base film is made of the high-temperature-resistant BOPP capacitor film or the high-temperature-resistant BOPP capacitor film prepared by the preparation method.

[0032] Compared with the prior art, the present application has the following beneficial effects:

[0033] (1) The high-temperature-resistant BOPP capacitor film is prepared by adding the organic semiconductor master batch into the polypropylene, the organic semiconductor master batch contains the conjugated organic semiconductor polymer and the cyclic olefin polymer, the conjugated organic semiconductor polymer is added to effectively improve the compatibility of the polypropylene and the cyclic olefin polymer, and the high-temperature-resistant BOPP capacitor film can be prepared, and the high-temperature-resistant BOPP capacitor film is used for preparing a film capacitor, and the high-temperature-resistant performance of the film capacitor can be significantly improved.

[0034] (2) The addition amount of the cyclic olefin polymer in the high-temperature-resistant BOPP capacitor film is low, and the high-temperature-resistant performance of the film capacitor is significantly improved due to the addition of the conjugated organic semiconductor polymer. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 The surface morphology diagram of the high-temperature-resistant BOPP capacitor film of Example 1. DETAILED DESCRIPTION

[0036] In order for those skilled in the art to better understand the technical solutions in the present application, the technical solutions of the present application will be described clearly and completely in combination with the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should belong to the scope of protection of the present application.

[0037] The raw materials used in the present application are all conventional commercial products.

[0038] Example 1

[0039] The present embodiment provides a kind of high-temperature-resistant BOPP capacitor film, specific preparation steps are as follows:

[0040] S1.COC 4.95g is crushed into powder, COC powder and toluene 50mL are mixed, heated to dissolve at 120~160 DEG C, and the cyclic olefin polymer solution is obtained;

[0041] S2.Congjugated organic semiconductor polymer 0.05g and toluene 0.5mL are mixed, heated to dissolve at 120~160 DEG C, and the conjugated organic semiconductor polymer solution is obtained;

[0042] S3.Cyclic olefin polymer solution and conjugated organic semiconductor polymer solution are mixed into homogeneous solution, add ethanol 25L, precipitate, take the precipitate, and the organic semiconductor master batch is obtained;

[0043] S4.Organic semiconductor master batch and polypropylene 95g powder are blended, melt extruded at 180-230 DEG C, and the polypropylene composite material is obtained;

[0044] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching. The longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0045] The structure of the conjugated organic semiconductor polymer is as shown below:

[0046] ;

[0047] The number average molecular weight Mn is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0048] Example 2

[0049] This example provides a high-temperature-resistant BOPP capacitor film. The specific preparation steps are as follows:

[0050] S1. COC 14.985 g is pulverized into powder. COC powder and toluene 750 mL are mixed, and heated to dissolve at 120-160°C, to obtain a cyclic olefin polymer solution.

[0051] S2. Conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL are mixed, and heated to dissolve at 120-160°C, to obtain a conjugated organic semiconductor polymer solution.

[0052] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution. Ethanol 75 L is added, and precipitated, to obtain an organic semiconductor master batch.

[0053] S4. The organic semiconductor master batch is blended with polypropylene 85 g powder, and melt-extruded at 180-230°C, to obtain a polypropylene composite material.

[0054] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching. The longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0055] The structure of the conjugated organic semiconductor polymer is as shown below:

[0056] ;

[0057] Among them, the number average molecular weight Mn is 7423Da, the PDI is 1.45, and the HT value is 80%.

[0058] Example 3

[0059] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0060] S1. Grind 4.95 g of COP into powder, mix the COP powder with 50 mL of toluene, and heat at 120-160°C to dissolve the mixture to obtain a cyclic olefin polymer solution.

[0061] S2. 0.05 g of the conjugated organic semiconductor polymer and 0.5 mL of toluene were mixed and dissolved by heating at 120-160° C. to obtain a conjugated organic semiconductor polymer solution;

[0062] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution were mixed into a homogeneous solution, ethanol 25L was added, precipitated, and the precipitate was taken to obtain an organic semiconductor masterbatch;

[0063] S4. The organic semiconductor masterbatch was blended with 95g of polypropylene powder and melt-extruded at 180-230°C to obtain a polypropylene composite material;

[0064] S5. The polypropylene composite material was added to a twin-screw extruder with an aspect ratio of 40:1 and plasticized into a uniform melt. The melt was extruded through a die to produce a film cast. The die temperature was 230°C. The film cast was biaxially stretched: preheating to 143°C for longitudinal stretching, stretching at 138°C, and setting at 143°C; and preheating to 165°C for transverse stretching, stretching at 159°C, and setting at 167°C. The film was then corona-treated to a strength of 43 mN / m and wound to obtain a high-temperature resistant BOPP capacitor film with a thickness of 5.5 μm.

[0065] The structure of the conjugated organic semiconductor polymer is shown below:

[0066] ;

[0067] Among them, the number average molecular weight Mn is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0068] Example 4

[0069] This embodiment provides a high-temperature resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0070] S1. Crush COP 14.985 g into powder, take COP powder and toluene 750 mL, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0071] S2. Mix conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL, heat and dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0072] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 75 L, precipitate, take the precipitate, and obtain an organic semiconductor master batch;

[0073] S4. Blend the organic semiconductor master batch with polypropylene 85 g powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0074] S5. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, extrude and cast the melt through a die to prepare a film cast piece, the temperature of the die is 230°C, bidirectionally stretch the film cast piece, longitudinal stretching: preheat 143°C, stretch 138°C, set 143°C; transverse stretching: preheat 165°C, stretch 159°C, set 167°C, corona surface treatment with a strength of 43 mN / m, and wind up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0075] The structure of the conjugated organic semiconductor polymer is as shown below:

[0076] ;

[0077] Wherein, the number average molecular weight Mn is 7423 Da, the PDI is 1.45, and the HT value is 80%.

[0078] Example 5

[0079] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0080] S1. Crush CBC 4.95 g into powder, take CBC powder and toluene 50 mL, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0081] S2. Mix conjugated organic semiconductor polymer 0.05 g and toluene 0.5 mL, heat and dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0082] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 25 L, precipitate, take the precipitate, and obtain an organic semiconductor master batch;

[0083] S4. Blend the organic semiconductor masterbatch with 95 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0084] S5. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1 to process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film casting piece, the temperature of the die being 230°C. The film casting piece is subjected to bidirectional stretching, the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and is wound up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0085] The structure of the conjugated organic semiconductor polymer is as shown below:

[0086] ;

[0087] The number average molecular weight Mn is 16397 Da, the PDI is 1.71, and the HT value is 91%.

[0088] Example 6

[0089] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0090] S1. Crush CBC 14.985 g into powder, mix the CBC powder with 750 mL of toluene, and heat to dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0091] S2. Mix the conjugated organic semiconductor polymer 0.015 g with 0.2 mL of toluene, and heat to dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0092] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 75 L of ethanol for precipitation, and take the precipitate to obtain an organic semiconductor masterbatch;

[0093] S4. Blend the organic semiconductor masterbatch with 85 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0094] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film cast piece. The temperature of the die is 230°C. The film cast piece is subjected to biaxial stretching, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0095] The structure of the conjugated organic semiconductor polymer is as shown below:

[0096]

[0097] The number average molecular weight Mn is 7423 Da, the PDI is 1.45, and the HT value is 80%.

[0098] Example 7

[0099] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0100] S1. The COC 4.95 g is crushed into powder. The COC powder and toluene 50 mL are mixed, and heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution.

[0101] S2. The conjugated organic semiconductor polymer 0.05 g and toluene 0.5 mL are mixed, and heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution.

[0102] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution, and 25 L of ethanol is added for precipitation. The precipitate is taken to obtain an organic semiconductor master batch.

[0103] S4. The organic semiconductor master batch is blended with polypropylene 95 g powder, and melt-extruded at 180-230°C to obtain a polypropylene composite material.

[0104] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film cast piece. The temperature of the die is 230°C. The film cast piece is subjected to biaxial stretching, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0105] The structure of the conjugated organic semiconductor polymer is as shown below:

[0106] The structure of the conjugated organic semiconductor polymer is as shown below: ;

[0107] wherein the number average molecular weight Mn is 9.7 KDa, the PDI is 3.51, the HT value is 80%, x = 5 mmol%, y = 95 mmol%.

[0108] Example 8

[0109] The embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0110] S1. Crush COC 14.985 g into powder, mix COC powder and toluene 750 mL, heat and dissolve at 120-160 DEG C to obtain a cyclic olefin polymer solution;

[0111] S2. Mix conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL, heat and dissolve at 120-160 DEG C to obtain a conjugated organic semiconductor polymer solution;

[0112] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 75 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0113] S4. Blend the organic semiconductor master batch with polypropylene 85 g powder, melt extrude at 180-230 DEG C to obtain a polypropylene composite material;

[0114] S5. Add the polypropylene composite material into a twin-screw extruder, the length-diameter ratio of the extruder is 40:1, process into a plasticized homogeneous melt, extrude and cast the melt through a die to prepare a film casting piece, the temperature of the die is 230 DEG C, bidirectionally stretch the film casting piece, longitudinal stretching: preheating 143 DEG C, stretching 138 DEG C, setting 143 DEG C; transverse stretching: preheating 165 DEG C, stretching 159 DEG C, setting 167 DEG C, perform corona surface treatment with a strength of 43 mN / m, and wind up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0115] The structure of the conjugated organic semiconductor polymer is as shown below:

[0116] ;

[0117] wherein the number average molecular weight Mn is 17.3 KDa, the PDI is 3.82, the HT value is 84.5%, x = 11.8 mmol%, y = 88.2 mmol%.

[0118] Example 9

[0119] The embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0120] S1. COP 4.95g was crushed into powder, COP powder and toluene 50 mL were mixed, heated to dissolve at 120~160℃, to obtain a cyclic olefin polymer solution;

[0121] S2. Conjugated organic semiconductor polymer 0.05g and toluene 0.5 mL were mixed, heated to dissolve at 120~160℃, to obtain a conjugated organic semiconductor polymer solution;

[0122] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution were mixed into a homogeneous solution, 25L of ethanol was added, precipitated, and the precipitate was taken, to obtain an organic semiconductor master batch;

[0123] S4. The organic semiconductor master batch was blended with polypropylene 95g powder, melt extruded at 180-230℃, to obtain a polypropylene composite material;

[0124] S5. The polypropylene composite material was added to a twin-screw extruder, the length-diameter ratio of the extruder was 40:1, and the material was processed into a plasticized homogeneous melt, the melt was extruded and cast through a die to prepare a film cast piece, the temperature of the die was 230℃, the film cast piece was bidirectionally stretched, the longitudinal stretching: preheating 143℃, stretching 138℃, setting 143℃; the transverse stretching: preheating 165℃, stretching 159℃, setting 167℃, the strength was 43mN / m, the surface was treated by corona discharge, and the film was wound, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5μm;

[0125] The structure of the conjugated organic semiconductor polymer is as shown below:

[0126] ;

[0127] The number average molecular weight Mn is 9.7KDa, the PDI is 3.51, the HT value is 80%, x=5mmol%, and y=95mmol%.

[0128] Example 10

[0129] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0130] S1. COP 14.985g was crushed into powder, COP powder and toluene 750 mL were mixed, heated to dissolve at 120~160℃, to obtain a cyclic olefin polymer solution;

[0131] S2. Conjugated organic semiconductor polymer 0.015g and toluene 0.2 mL were mixed, heated to dissolve at 120~160℃, to obtain a conjugated organic semiconductor polymer solution;

[0132] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 75 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0133] S4. Blend the organic semiconductor master batch with 85 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0134] S5. Add the polypropylene composite material to a twin-screw extruder with a length-diameter ratio of 40:1 to process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film casting piece, with the temperature of the die being 230°C. The film casting piece is subjected to bidirectional stretching, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and is wound up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0135] The structure of the conjugated organic semiconductor polymer is as shown below:

[0136] ;

[0137] The number average molecular weight Mn is 17.3 KDa, the PDI is 3.82, the HT value is 84.5%, x = 11.8 mmol%, and y = 88.2 mmol%.

[0138] Example 11

[0139] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0140] S1. Crush CBC 4.95 g into powder, mix the CBC powder and 50 mL of toluene, and heat to dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0141] S2. Mix the conjugated organic semiconductor polymer 0.05 g and 0.5 mL of toluene, and heat to dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0142] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0143] S4. Blend the organic semiconductor master batch with 95 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0144] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching, longitudinal stretching: preheating at 143°C, stretching at 138°C, and setting at 143°C; transverse stretching: preheating at 165°C, stretching at 159°C, and setting at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0145] The structure of the conjugated organic semiconductor polymer is as shown below:

[0146] ;

[0147] The number average molecular weight Mn is 9.7 KDa, the PDI is 3.51, the HT value is 80%, x = 5 mmol%, and y = 95 mmol%.

[0148] Example 12

[0149] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0150] S1. The CBC 14.985 g is crushed into powder. The CBC powder and toluene 750 mL are mixed, and heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0151] S2. The conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL are mixed, and heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0152] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution. Ethanol 75 L is added for precipitation. The precipitate is taken to obtain an organic semiconductor master batch;

[0153] S4. The organic semiconductor master batch is blended with polypropylene 85 g powder, and melt-extruded at 180-230°C to obtain a polypropylene composite material;

[0154] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching, longitudinal stretching: preheating at 143°C, stretching at 138°C, and setting at 143°C; transverse stretching: preheating at 165°C, stretching at 159°C, and setting at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0155] The structure of the conjugated organic semiconductor polymer is as shown below:

[0156] ;

[0157] wherein the number average molecular weight Mn is 17.3 KDa, the PDI is 3.82, the HT value is 84.5%, x = 11.8 mmol%, and y = 88.2 mmol%.

[0158] Example 13

[0159] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0160] S1. Crush COC 4.95 g into powder, mix COC powder and toluene 50 mL, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0161] S2. Mix conjugated organic semiconductor polymer 0.05 g and toluene 0.5 mL, heat and dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0162] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 25 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0163] S4. Blend the organic semiconductor master batch with polypropylene 95 g powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0164] S5. Add the polypropylene composite material to a twin-screw extruder, and the length-diameter ratio of the extruder is 40:1, process into a plasticized homogeneous melt, and the melt is extruded and cast through a die to prepare a film casting piece, the temperature of the die is 230°C, the film casting piece is bidirectionally stretched, the longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C; the transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C, the strength is 43 mN / m, the surface is treated by corona, and the film casting piece is wound to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0165] The structure of the conjugated organic semiconductor polymer is as shown below:

[0166] ;

[0167] wherein the number average molecular weight Mn is 17.3 KDa, the PDI is 3.82, the HT value is 84.5%, x = 11.8 mmol%, and y = 88.2 mmol%.

[0168] Example 14

[0169] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0170] S1. 4.985 g of COC was pulverized into powder, and 750 mL of toluene was mixed with the COC powder, and then heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0171] S2. 0.015 g of a conjugated organic semiconductor polymer and 0.2 mL of toluene were mixed, and then heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0172] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution were mixed into a homogeneous solution, 75 L of ethanol was added, and then precipitated, and the precipitate was obtained to obtain an organic semiconductor master batch;

[0173] S4. The organic semiconductor master batch was blended with 85 g of polypropylene powder, and then melt-extruded at 180-230°C to obtain a polypropylene composite material;

[0174] S5. The polypropylene composite material was added to a twin-screw extruder, the length-diameter ratio of the extruder was 40:1, and the material was processed into a homogeneous melt, and then the melt was extruded and cast through a die to prepare a film cast piece, the temperature of the die was 230°C, the film cast piece was bidirectionally stretched, the longitudinal stretching was preheated at 143°C, stretched at 138°C, and set at 143°C; the transverse stretching was preheated at 165°C, stretched at 159°C, and set at 167°C, the surface was treated by corona discharge with a strength of 43 mN / m, and then wound up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0175] The structure of the conjugated organic semiconductor polymer is as follows:

[0176] ;

[0177] The number average molecular weight Mn is 4.7 KDa, the PDI is 1.3, the HT value is 83%, x=20 mmol%, and y=80 mmol%.

[0178] Example 15

[0179] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0180] S1. 4.95 g of COP was pulverized into powder, and 50 mL of toluene was mixed with the COP powder, and then heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0181] S2. 0.05 g of a conjugated organic semiconductor polymer and 0.5 mL of toluene were mixed, and then heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0182] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0183] S4. Blend the organic semiconductor master batch with 95 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0184] S5. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1 to process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film casting piece, with the temperature of the die being 230°C. The film casting piece is subjected to bidirectional stretching, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and is wound up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0185] The structure of the conjugated organic semiconductor polymer is as shown below:

[0186] ;

[0187] The number average molecular weight Mn is 13.8 KDa, the PDI is 2.2, the HT value is 85%, x = 4.3 mmol%, and y = 95.7 mmol%.

[0188] Example 16

[0189] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0190] S1. Crush 14.985 g of COP into powder, mix the COP powder and 750 mL of toluene, and heat to dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0191] S2. Mix 0.015 g of conjugated organic semiconductor polymer and 0.2 mL of toluene, and heat to dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0192] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 75 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0193] S4. Blend the organic semiconductor master batch with 85 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0194] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching. The longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0195] The structure of the conjugated organic semiconductor polymer is as shown below:

[0196] ;

[0197] The number average molecular weight Mn is 4.7 KDa, the PDI is 1.3, the HT value is 83%, x = 20 mmol%, and y = 80 mmol%.

[0198] Example 17

[0199] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0200] S1. The CBC 4.95 g is crushed into powder. The CBC powder and toluene 50 mL are mixed, and heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0201] S2. The conjugated organic semiconductor polymer 0.05 g and toluene 0.5 mL are mixed, and heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0202] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution. Ethanol 25 L is added for precipitation. The precipitate is taken to obtain an organic semiconductor master batch;

[0203] S4. The organic semiconductor master batch is blended with polypropylene 95 g powder, and melt-extruded at 180-230°C to obtain a polypropylene composite material;

[0204] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting. The temperature of the die is 230°C. The film casting is subjected to biaxial stretching. The longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0205] The structure of the conjugated organic semiconductor polymer is as shown below:

[0206] ;

[0207] wherein the number average molecular weight Mn is 13.8 KDa, the PDI is 2.2, the HT value is 85%, x = 4.3 mmol%, and y = 95.7 mmol%.

[0208] Example 18

[0209] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0210] S1. Crush CBC 14.985 g into powder, mix CBC powder and toluene 750 mL, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0211] S2. Mix conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL, heat and dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0212] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 75 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0213] S4. Blend the organic semiconductor master batch with polypropylene 85 g powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0214] S5. Add the polypropylene composite material to a twin-screw extruder, and the length-diameter ratio of the extruder is 40:1, process into a plasticized homogeneous melt, and the melt is extruded and cast through a die to prepare a film casting piece, the temperature of the die is 230°C, the film casting piece is bidirectionally stretched, the longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C; the transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C, the strength is 43 mN / m, the surface is treated by corona, and the thickness is 5.5 μm, to obtain a high-temperature-resistant BOPP capacitor film;

[0215] The structure of the conjugated organic semiconductor polymer is as shown below:

[0216] ;

[0217] wherein the number average molecular weight Mn is 4.7 KDa, the PDI is 1.3, the HT value is 83%, x = 20 mmol%, and y = 80 mmol%.

[0218] Example 19

[0219] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0220] S1. COC 4.95g was pulverized into powder, COC powder and toluene 50 mL were mixed, heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0221] S2. Conjugated organic semiconductor polymer 0.05g and toluene 0.5 mL were mixed, heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0222] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution were mixed into a homogeneous solution, 25 L of ethanol was added, precipitated, and the precipitate was obtained to obtain an organic semiconductor master batch;

[0223] S4. The organic semiconductor master batch was blended with polypropylene 95g powder, and melt extruded at 180-230°C to obtain a polypropylene composite material;

[0224] S5. The polypropylene composite material was added to a twin-screw extruder with a length-diameter ratio of 40:1, and processed into a plasticized homogeneous melt. The melt was extruded and cast through a die to prepare a film cast piece, with the die temperature being 230°C. The film cast piece was bidirectionally stretched, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The strength was 43 mN / m, and the surface was treated by corona discharge. The high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm was obtained after rolling;

[0225] The structure of the conjugated organic semiconductor polymer is as follows:

[0226] ;

[0227] Wherein, the number average molecular weight Mn is 13.5 KKDa, the PDI is 2.5, the HT value is 87%, x = 2.5 mmol%, and y = 97.5 mmol%.

[0228] Example 20

[0229] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0230] S1. COC 14.985g was pulverized into powder, COC powder and toluene 750 mL were mixed, heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0231] S2. Conjugated organic semiconductor polymer 0.015g and toluene 0.2 mL were mixed, heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0232] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 75 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0233] S4. Blend the organic semiconductor master batch with 85 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0234] S5. Add the polypropylene composite material to a twin-screw extruder with a length-diameter ratio of 40:1 to process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film casting piece, with the temperature of the die being 230°C. The film casting piece is subjected to bidirectional stretching, with the longitudinal stretching being preheated at 143°C, stretched at 138°C, and set at 143°C; and the transverse stretching being preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and is wound up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0235] The structure of the conjugated organic semiconductor polymer is as shown below:

[0236] ;

[0237] The number average molecular weight Mn is 7.5 KKDa, the PDI is 2.1, the HT value is 89%, x = 13.9 mmol%, and y = 86.1 mmol%.

[0238] Example 21

[0239] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0240] S1. Crush 4.95 g of COP into powder, mix the COP powder with 50 mL of toluene, and heat to dissolve at 120-160°C to obtain a cyclic olefin polymer solution;

[0241] S2. Mix 0.05 g of conjugated organic semiconductor polymer with 0.5 mL of toluene, and heat to dissolve at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0242] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0243] S4. Blend the organic semiconductor master batch with 95 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0244] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting, and the temperature of the die is 230°C. The film casting is subjected to biaxial stretching, and the longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, and a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm is obtained.

[0245] The structure of the conjugated organic semiconductor polymer is as shown below:

[0246] ;

[0247] The number average molecular weight Mn is 13.5 KKDa, the PDI is 2.5, the HT value is 87%, x = 2.5 mmol%, and y = 97.5 mmol%.

[0248] Example 22

[0249] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0250] S1. COP 14.985 g is crushed into powder, and the COP powder and toluene 750 mL are mixed. The mixture is heated and dissolved at 120-160°C to obtain a cyclic olefin polymer solution;

[0251] S2. The conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL are mixed, and the mixture is heated and dissolved at 120-160°C to obtain a conjugated organic semiconductor polymer solution;

[0252] S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution, and ethanol 75 L is added for precipitation. The precipitate is taken to obtain an organic semiconductor master batch;

[0253] S4. The organic semiconductor master batch is blended with polypropylene 85 g powder, and melt extruded at 180-230°C to obtain a polypropylene composite material;

[0254] S5. The polypropylene composite material is added into a twin-screw extruder with a length-diameter ratio of 40:1, and plasticized into a uniform melt. The melt is extruded through a die to prepare a film casting, and the temperature of the die is 230°C. The film casting is subjected to biaxial stretching, and the longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. The film is subjected to corona surface treatment with a strength of 43 mN / m and winding, and a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm is obtained.

[0255] The structure of the conjugated organic semiconductor polymer is as shown below:

[0256] ;

[0257] The number average molecular weight Mn is 7.5 KKDa, the PDI is 2.1, the HT value is 89%, x = 13.9 mmol%, and y = 86.1 mmol%.

[0258] Example 23

[0259] The present embodiment provides a high-temperature-resistant BOPP capacitor film, and the specific preparation steps are as follows:

[0260] S1. Crush CBC 4.95 g into powder, mix CBC powder and toluene 50 mL, heat to dissolve at 120-160°C, and obtain a cyclic olefin polymer solution;

[0261] S2. Mix the conjugated organic semiconductor polymer 0.05 g and toluene 0.5 mL, heat to dissolve at 120-160°C, and obtain a conjugated organic semiconductor polymer solution;

[0262] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 25 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0263] S4. Blend the organic semiconductor master batch with polypropylene 95 g powder, melt extrude at 180-230°C, and obtain a polypropylene composite material;

[0264] S5. Add the polypropylene composite material to a twin-screw extruder, and the length-diameter ratio of the extruder is 40:1. Process into a plasticized homogeneous melt, extrude and cast the melt through a die to prepare a film casting piece. The temperature of the die is 230°C. Bidirectionally stretch the film casting piece, the longitudinal stretching is preheated at 143°C, stretched at 138°C, and set at 143°C. The transverse stretching is preheated at 165°C, stretched at 159°C, and set at 167°C. Perform corona surface treatment at a strength of 43 mN / m, and wind up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0265] The structure of the conjugated organic semiconductor polymer is as shown below:

[0266] ;

[0267] The number average molecular weight Mn is 7.5 KKDa, the PDI is 2.1, the HT value is 89%, x = 13.9 mmol%, and y = 86.1 mmol%.

[0268] Example 24

[0269] The embodiment provides a high-temperature-resistant BOPP capacitor film, and specific preparation steps are as follows:

[0270] S1. Crush CBC 14.985 g into powder, mix the CBC powder and toluene 750 mL, heat and dissolve at 120-160 DEG C to obtain a cyclic olefin polymer solution;

[0271] S2. Mix the conjugated organic semiconductor polymer 0.015 g and toluene 0.2 mL, heat and dissolve at 120-160 DEG C to obtain a conjugated organic semiconductor polymer solution;

[0272] S3. Mix the cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution into a homogeneous solution, add ethanol 75 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0273] S4. Blend the organic semiconductor master batch with polypropylene 85 g powder, melt extrude at 180-230 DEG C to obtain a polypropylene composite material;

[0274] S5. Add the polypropylene composite material into a twin-screw extruder, the length-diameter ratio of the extruder is 40:1, process into plasticized melt, extrude and cast the melt through a die to prepare a film casting piece, the temperature of the die is 230 DEG C, bidirectionally stretch the film casting piece, longitudinal stretching: preheating 143 DEG C, stretching 138 DEG C, setting 143 DEG C; transverse stretching: preheating 165 DEG C, stretching 159 DEG C, setting 167 DEG C, perform corona surface treatment with a strength of 43 mN / m, and wind up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm;

[0275] The structure of the conjugated organic semiconductor polymer is as follows:

[0276] ;

[0277] Wherein, the number average molecular weight Mn is 7.5 KKDa, the PDI is 2.1, the HT value is 89%, x=13.9 mmol%, and y=86.1 mmol%.

[0278] Comparative Example 1

[0279] The comparative example provides a high-temperature-resistant BOPP capacitor film, and the difference from the embodiment 1 is only that no conjugated organic semiconductor polymer is added, and specific preparation steps are as follows:

[0280] S1. Crush COC 5 g into powder, mix the COC powder and toluene 50 mL, heat and dissolve at 120-160 DEG C to obtain a cyclic olefin polymer solution, add ethanol 25 L, precipitate, and take the precipitate to obtain an organic semiconductor master batch;

[0281] S2. Blend the organic semiconductor masterbatch with 95 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0282] S3. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film cast piece, the temperature of the die is 230°C, bidirectionally stretch the film cast piece, longitudinal stretching: preheat at 143°C, stretch at 138°C, and set at 143°C; transverse stretching: preheat at 165°C, stretch at 159°C, and set at 167°C, perform corona surface treatment with a strength of 43 mN / m, and roll up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0283] Comparative Example 2

[0284] This comparative example provides a high-temperature-resistant BOPP capacitor film, which is different from Example 1 only in that no conjugated organic semiconductor polymer is added, and the specific preparation steps are as follows:

[0285] S1. Crush 10 g of COC into powder, mix the COC powder with 50 mL of toluene, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch;

[0286] S2. Blend the organic semiconductor masterbatch with 90 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0287] S3. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film cast piece, the temperature of the die is 230°C, bidirectionally stretch the film cast piece, longitudinal stretching: preheat at 143°C, stretch at 138°C, and set at 143°C; transverse stretching: preheat at 165°C, stretch at 159°C, and set at 167°C, perform corona surface treatment with a strength of 43 mN / m, and roll up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0288] Comparative Example 3

[0289] This comparative example provides a high-temperature-resistant BOPP capacitor film, which is different from Example 1 only in that no conjugated organic semiconductor polymer is added, and the specific preparation steps are as follows:

[0290] S1. Crush 20 g of COC into powder, mix the COC powder with 50 mL of toluene, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch;

[0291] S2. Blend the organic semiconductor masterbatch with 80 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0292] S3. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film cast piece, the temperature of the die is 230°C, bidirectionally stretch the film cast piece, longitudinal stretching: preheat at 143°C, stretch at 138°C, and set at 143°C; transverse stretching: preheat at 165°C, stretch at 159°C, and set at 167°C, perform corona surface treatment with a strength of 43 mN / m, and roll up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0293] Comparative Example 4

[0294] This comparative example provides a high-temperature-resistant BOPP capacitor film, which is different from Example 3 only in that no conjugated organic semiconductor polymer is added, and the specific preparation steps are as follows:

[0295] S1. Crush 20 g of COP into powder, mix the COP powder with 50 mL of toluene, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch;

[0296] S2. Blend the organic semiconductor masterbatch with 80 g of polypropylene powder, melt extrude at 180-230°C to obtain a polypropylene composite material;

[0297] S3. Add the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film cast piece, the temperature of the die is 230°C, bidirectionally stretch the film cast piece, longitudinal stretching: preheat at 143°C, stretch at 138°C, and set at 143°C; transverse stretching: preheat at 165°C, stretch at 159°C, and set at 167°C, perform corona surface treatment with a strength of 43 mN / m, and roll up to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0298] Comparative Example 5

[0299] This comparative example provides a high-temperature-resistant BOPP capacitor film, which is different from Example 5 only in that no conjugated organic semiconductor polymer is added, and the specific preparation steps are as follows:

[0300] S1. Crush 20 g of CBC into powder, mix the CBC powder with 50 mL of toluene, heat and dissolve at 120-160°C to obtain a cyclic olefin polymer solution, add 25 L of ethanol, precipitate, and take the precipitate to obtain an organic semiconductor masterbatch;

[0301] S2. Blend the organic semiconductor masterbatch with polypropylene 80 g powder, melt extrude at 180-230 °C to obtain polypropylene composite material;

[0302] S3. Put the polypropylene composite material into a twin-screw extruder with a length-diameter ratio of 40:1, process into a plasticized homogeneous melt, and extrude the melt through a die to prepare a film casting piece, the temperature of the die is 230 °C, and the film casting piece is subjected to biaxial stretching, longitudinal stretching: preheating at 143 °C, stretching at 138 °C, and setting at 143 °C; transverse stretching: preheating at 165 °C, stretching at 159 °C, and setting at 167 °C, corona surface treatment with a strength of 43 mN / m, and winding, to obtain a high-temperature-resistant BOPP capacitor film with a thickness of 5.5 μm.

[0303] Examples 25-48

[0304] The present embodiment provides a film capacitor, and the specific preparation steps are as follows:

[0305] The high-temperature-resistant BOPP capacitor films of Examples 1-24 are respectively plated, wound, statically pressed, heat set, sprayed with gold, and packaged to obtain the film capacitors of Examples 25-48, respectively.

[0306] Comparative Examples 6-10

[0307] The present comparative example provides a film capacitor, and the specific preparation steps are as follows:

[0308] The high-temperature-resistant BOPP capacitor films of Comparative Examples 1-5 are respectively plated, wound, statically pressed, heat set, sprayed with gold, and packaged to obtain the film capacitors of Comparative Examples 6-10, respectively.

[0309] Performance test:

[0310] The film capacitors of Examples 25-48 and Comparative Examples 6-10 are subjected to performance testing, and the results are shown in Table 1.

[0311] Capacitance change rate test: The initial capacitance value is tested by connecting the two electrodes of the film capacitors of Examples 25-48 and Comparative Examples 6-10 to a power source, respectively. Then the film capacitors of Examples 25-48 and Comparative Examples 6-10 are placed in a 125 °C constant temperature oven, a direct current voltage of 900 V is applied, the capacitance value is measured after running for different hours in the oven, and the last capacitance value is measured at 1000 h. All experiments are divided into three groups, and the capacitance change rate is calculated after taking the average, wherein the capacitance change exceeds -5.0%, indicating that the capacitor has failed. The results are shown in Table 1.

[0312] Table 1. Capacitance change rate test results of film capacitor film.

[0313]

[0314] As shown in Table 1, the thin film capacitor of the present application has a small capacitance change rate and high high-temperature durability.

[0315] It should be noted that the above examples are only used to illustrate the technical solutions of the present application but not to limit it. Although the present application has been described in detail with reference to the above examples, those skilled in the art should understand that the specific embodiments of the present application can be modified or replaced by equivalents after reading the specification, but these modifications or replacements are still within the scope of the present application.

Claims

1. A high temperature resistant BOPP capacitor film, characterized in that: The materials for preparing the high-temperature resistant BOPP capacitor film include polypropylene and an organic semiconductor masterbatch, and the organic semiconductor masterbatch includes a conjugated organic semiconductor polymer and a cyclic olefin polymer.

2. The high temperature resistant BOPP capacitor film according to claim 1, characterized in that: Calculated by mass percentage, the amount of the organic semiconductor masterbatch is 5-15% of the high temperature resistant BOPP capacitor film.

3. The high temperature resistant BOPP capacitor film according to claim 1, characterized in that: Calculated by mass percentage, the amount of the conjugated organic semiconductor polymer is 0.1% to 1% of the organic semiconductor masterbatch.

4. The high temperature resistant BOPP capacitor film according to claim 1, characterized in that: The cyclic olefin polymer is selected from at least one of COC, COP, and CBC.

5. The high temperature resistant BOPP capacitor film according to claim 1, characterized in that: The conjugated organic semiconductor polymer is selected from poly (3-hexylthiophene) or a thiophene copolymer.

6. The high temperature resistant BOPP capacitor film according to claim 5, characterized in that: The thiophene copolymer is selected from a copolymer selected from any of the following structures: 、 、 Among them, the number average molecular weight is 4.7~17.3KDa.

7. The high temperature resistant BOPP capacitor film according to claim 5, characterized in that: The mole percentage of the hexylthiophene segment of the thiophene copolymer to the polythiophene segment is 80% to 97.1%.

8. The high temperature resistant BOPP capacitor film according to claim 5, characterized in that: The isotacticity of the thiophene copolymer is ≥80%.

9. The method for preparing a high temperature resistant BOPP capacitor film according to any one of claims 1 to 8, characterized in that: The steps include: S1. The cyclic olefin polymer is crushed into a powder, the cyclic olefin polymer powder is mixed with a solvent, and heated to dissolve to obtain a cyclic olefin polymer solution; S2. The conjugated organic semiconductor polymer and the solvent are mixed and heated to dissolve to obtain a conjugated organic semiconductor polymer solution; S3. The cyclic olefin polymer solution and the conjugated organic semiconductor polymer solution are mixed into a homogeneous solution, a poor solvent is added, and precipitated to obtain an organic semiconductor masterbatch; S4. The organic semiconductor masterbatch is blended with polypropylene powder and melt-extruded to obtain a polypropylene composite material; S5. Processing the polypropylene composite material into a melt, extruding and casting, and biaxially stretching to obtain a high-temperature resistant BOPP capacitor film.

10. A film capacitor, characterized in that: The base film of the film capacitor is made of the high-temperature resistant BOPP capacitor film according to any one of claims 1 to 8 or the high-temperature resistant BOPP capacitor film prepared by the preparation method of the high-temperature resistant BOPP capacitor film according to claim 9.

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