Silicon carbide MOSFET aging state junction temperature online monitoring method based on device turn-off delay

CN120801972APending Publication Date: 2025-10-17SOUTHEAST UNIV
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Patent Information

Application Number
CN202510929328.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-07
Publication Date
2025-10-17

AI Technical Summary

Technical Problem

Existing technologies make it difficult to accurately monitor the junction temperature of silicon carbide MOSFETs online, especially when the device is in an aging state, where monitoring errors may occur. Traditional methods may also affect the normal operation of the system or be difficult to integrate.

Method used

By constructing a mapping curve between turn-off delay and junction temperature, combined with the turn-off delay data under aging conditions, a simple junction temperature monitoring circuit is used to implement junction temperature monitoring within a switching cycle, taking into account the impact of device aging on turn-off delay and eliminating errors.

Benefits of technology

Accurate online monitoring of the junction temperature of silicon carbide MOSFETs in the aging state is achieved, reducing the impact on normal system operation, improving the accuracy and practicality of monitoring, and is suitable for a wider switching frequency range.

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Abstract

The invention discloses a silicon carbide MOSFET aging state junction temperature on-line monitoring method based on device turn-off delay, comprising the following steps: step 1, constructing a mapping relation curve of turn-off delay and junction temperature of a target SiC MOSFET in a healthy state, the current flowing through the target SiC MOSFET being a set value; step 2, collecting turn-off data of a target SiC MOSFET in an aging state, and obtaining the turn-off delay and junction temperature mapping relation curve of the SiC MOSFET in the aging state in combination with the slope of the turn-off delay and junction temperature mapping relation curve of the target SiC MOSFET in the healthy state, the current flowing through the target SiC MOSFET being a set value; and step 3, obtaining the turn-off delay when the current flowing through the SiC MOSFET to be measured in the converter circuit is a set value, and obtaining the junction temperature of the SiC MOSFET to be measured through the mapping relation curve of the turn-off delay and the junction temperature of the SiC MOSFET in the aging state. The influence of the aging state of the power device on turn-off delay is considered, junction temperature monitoring errors caused by aging are eliminated, and the accuracy of junction temperature measurement is ensured.
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