Focused ion beam micro-nano machining system with integrated beam gate and centering unit

Abstract

The invention relates to a beam gate and centering unit integrated focused ion beam micro-nano machining system and an ion beam control method. The focused ion beam micro-nano machining system integrating the beam brake and the centering units comprises a first centering unit (3), a second centering unit (4), a Faraday cup (5) and a control unit, and the control unit is electrically connected with the first centering unit (3) and the second centering unit (4). The control unit is used for controlling the first centering unit (3) and the second centering unit (4) to form a deflection electric field. According to the focused ion beam micro-nano machining system integrating the beam gate and the centering units, the centering unit located on the lower portion is used as the beam gate by means of the superposing performance of electric signals, and integration of the beam gate and the centering units is achieved; rapid closing of the ion beam under high-voltage driving and high-precision centering and axis closing of the ion beam under low-voltage driving can be realized in the same unit, and the complexity of an ion optical system and circuit control is reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of focused ion beam technology and its microfabrication application, and particularly relates to a focused ion beam micro-nano fabrication system. BACKGROUND

[0002] Focused ion beam (FIB) is a microfabrication technology that uses electrostatic lens to focus ion beam to a very small size, and is widely used in the fields of semiconductor, material and biomedicine.

[0003] The FIB system mainly includes an ion source, a focusing system, a deflection system, a centering unit and a beam shutter unit, etc. In the FIB system, in order to obtain a nanoscale ion beam spot, a two-stage focusing lens is usually used. The errors in processing and assembling of the two-stage focusing lens result in that the two-stage lens cannot be coaxial, and the lens axes cannot be completely coincident. Therefore, the centering unit is arranged to adjust the ion beam to be coaxial.

[0004] In addition, in the process of using the ion beam for processing, it is sometimes necessary to interrupt the ion beam. Therefore, the beam shutter unit is arranged. By applying a deflection electric field to the beam shutter unit, the ion beam is deflected away from the diaphragm installed near the cross spot, so as to achieve the purpose of cutting off the ion beam.

[0005] In the prior art, the beam shutter unit and the centering unit are usually arranged as independent components. Usually, two pairs of centering units are arranged between the condenser and the objective lens to realize centering in the X direction and the Y direction. In addition, the beam shutter unit is usually installed between the condenser and the objective lens and below the centering unit, and a Faraday cup aperture is used as a beam shutter diaphragm to cooperate with the beam shutter to realize rapid on-off of the ion beam.

[0006] Such a design of arranging the centering unit and the beam shutter unit separately has many defects: the beam shutter and the centering unit need to be installed independently, which increases the system complexity and the difficulty of centering adjustment; the cumulative error of the separate design and assembly is increased, which not only reduces the overall structural stability, but also increases the system aberration due to the lengthening of the optical path, and finally affects the processing performance; and the complexity of the power supply and control is increased.

[0007] Therefore, how to improve the centering unit and the beam shutter unit to make the system structure more compact and the system aberration further reduced so as to improve the processing performance is a problem to be solved in the field. SUMMARY

[0008] The present inventors have found that the beam shutter and centering unit integrated focused ion beam micro-nano processing system proposed by the present application can make the structure of the focused ion beam micro-nano processing system more compact, and the assembly more convenient, significantly shorten the length of the focused ion beam lens barrel, reduce the complexity of the ion optical system and circuit control, and obtain the dual-mode efficient synergistic effect of "high-voltage fast cutting + micro-voltage fine centering".

[0009] The technical solutions adopted by the present application are as follows:

[0010] [1]. A beam shutter and centering unit integrated focused ion beam micro-nano processing system, comprising a first centering unit, a second centering unit, a Faraday cup and a control unit,

[0011] The control unit is electrically connected with the first centering unit and the second centering unit, respectively, for controlling the first centering unit and the second centering unit to form a deflection electric field;

[0012] The first centering unit and the second centering unit are arranged in a direction perpendicular to the central axis of the focused ion beam micro-nano processing system, and are arranged in a radial orthogonal manner,

[0013] The second centering unit is arranged below the first centering unit, and the Faraday cup is arranged below the second centering unit,

[0014] The first centering unit is controlled to apply or cancel the application of a first action force for generating a micron-level displacement in the corresponding radial direction to the ion beam;

[0015] The second centering unit is controlled to apply a second action force for generating a micron-level displacement in the corresponding radial direction, a third action force for making the ion beam deviate from the small hole of the Faraday cup to block the propagation of the ion beam, or cancel the application of the action force to the ion beam.

[0016] [2]. The beam shutter and centering unit integrated focused ion beam micro-nano processing system according to [1], characterized in that,

[0017] The control unit is used to control the first centering unit to form a first deflection electric field, and the first deflection electric field is used to apply the first action force to the ion beam,

[0018] The control unit is used to control the second centering unit to form a second deflection electric field, and the second deflection electric field is used to apply the second action force to the ion beam,

[0019] The control unit is used to control the second centering unit to form a third deflection electric field, and the third deflection electric field is used to apply the third force to the ion beam.

[0020] [3] The focused ion beam micro-nano processing system with integrated beam gate and centering unit according to [1], wherein the first centering unit and the second centering unit have the same structure, both comprising a housing, two fan-shaped electrode sheets, an insulating ceramic ring, an insulating ceramic sheet, and a fixing sheet.

[0021] The electrode sheet is assembled on the insulating ceramic ring by clearance fit and is axially positioned by terminal pins;

[0022] The insulating ceramic ring is installed in the housing through clearance fit and is positioned by terminal pins;

[0023] The fixing plate is fixed to the upper and lower ends of the first centering unit or the second centering unit by interference fit, and its end face is flush with the end face of the shell, and is used to limit the axial freedom of the electrode plate, the insulating ceramic ring (103) and the insulating ceramic plate.

[0024] [4] A focused ion beam micro-nano processing system with an integrated beam gate and centering unit according to [1], comprising a condenser (1), a movable aperture (2), the first centering unit (3), the second centering unit (4), a Faraday cup (5) and an objective lens (6) arranged in sequence from top to bottom.

[0025] [5] A method for controlling an ion beam, which uses a focused ion beam micro-nano processing system having an integrated beam gate and a centering unit as described in any one of [1] to [4], and

[0026] Using a control unit, the first centering unit generates a first deflection electric field to apply the first force to the ion beam, causing the ion beam to generate a micron-level displacement in a corresponding radial direction; and

[0027] The control unit is used to enable the second centering unit to form a second deflection electric field, and to apply the second force to the ion beam, so that the ion beam generates a micron-level displacement in the corresponding radial direction.

[0028] [6] A method for controlling an ion beam, which uses a focused ion beam micro-nano processing system integrating a beam gate and a centering unit as described in any one of [1] to [4], and

[0029] The control unit is used to change the electric field formed by the second centering unit from the second deflection electric field to the third deflection electric field, thereby changing the force applied to the ion beam from the second force to the third force, causing the ion beam to deviate from the central axis to block the propagation of the ion beam.

[0030] [7] The control method of the beam shutter and centering unit integrated focused ion beam micro-nano processing system according to [6], wherein,

[0031] The first centering unit is controlled by the control unit to form a first deflection electric field, and the ion beam is subjected to the first force.

[0032] [8] A control method of an ion beam, which uses the beam shutter and centering unit integrated focused ion beam micro-nano processing system according to any one of [1] to [4], and,

[0033] The control unit changes the electric field formed by the second centering unit from a third deflection electric field to a second deflection electric field, thereby changing the force applied to the ion beam from the third force to the second force, and changing the ion beam from a state of deviating from the central axis to a state of generating a micron-level displacement in the corresponding axis direction, so that the ion beam propagates along the central axis.

[0034] [9] The control method of the beam shutter and centering unit integrated focused ion beam micro-nano processing system according to [8], wherein the first centering unit is controlled by the control unit to form a first deflection electric field, and the ion beam is subjected to the first force.

[0035] The beam shutter and centering unit integrated focused ion beam micro-nano processing system of the present application uses the superposition of electric signals, uses the lower centering unit as the function of the beam shutter, realizes the integration of the beam shutter and the centering unit, and can realize the rapid closing of the ion beam under high voltage driving and the high-precision centering of the ion beam under low voltage driving in the same unit, thereby reducing the complexity of the ion optical system and the circuit control. Therefore, the structure of the focused ion beam micro-nano processing system of the present application is more compact and convenient to assemble.

[0036] The ion beam control method of the present application can rapidly realize the rapid closing and starting of the ion beam, and can improve the quality of processing by using the ion beam. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0038] Figure 1 It is a structural schematic diagram of the beam shutter and centering unit integrated focused ion beam micro-nano processing system of an embodiment.

[0039] Figure 2It is an explosion view of a first centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system.

[0040] Figure 3 It is a structural schematic view of a first centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system.

[0041] Figure 4 It is a sectional view of a first centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system.

[0042] Figure 5 It is a sectional view of a structure formed by a first centering unit and a second centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system.

[0043] Figure 6 It is a principle illustration of a first centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system playing a centering function.

[0044] Figure 7 It is a principle illustration of a second centering unit of a beam gate and centering unit integrated focused ion beam micro-nano processing system playing a beam gate function. DETAILED DESCRIPTION

[0045] In order to enable persons skilled in the art to better understand the scheme of the present application, the technical scheme in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by persons skilled in the art without making creative efforts should belong to the protection scope of the present application.

[0046] The following will be further described in detail in combination with the drawings and embodiments.

[0047] A beam gate and centering unit integrated focused ion beam micro-nano processing system of an embodiment comprises a first centering unit, a second centering unit and a control unit,

[0048] The control unit is electrically connected with the first centering unit and the second centering unit respectively, and is used for controlling the first centering unit and the second centering unit to form a deflection electric field.

[0049] The first centering unit and the second centering unit are arranged in a direction perpendicular to a central axis of the focused ion beam micro-nano processing system, and are configured radially orthogonally, and the second centering unit is arranged below the first centering unit,

[0050] The first centering unit is controlled to apply a first force to the ion beam for generating a micrometer-level displacement in a corresponding radial direction or to cancel the application of the first force;

[0051] The second centering unit is controlled to apply a second force to the ion beam for generating a micrometer-level displacement in a corresponding radial direction, a third force to deflect the ion beam to block ion beam propagation, or cancel the application of the force.

[0052] like Figure 1 As shown, a focused ion beam micro-nanomachining system with an integrated beam gate and centering unit according to one embodiment includes, arranged from top to bottom, a condenser 1, a movable aperture 2, a first centering unit 3, a second centering unit 4, a Faraday cup 5, and an objective lens 6. The first centering unit 3 and the second centering unit 4 are arranged radially orthogonally. That is, if the axial direction from top to bottom is set as the Z direction, the first centering unit 3 is located in the Y direction, which is perpendicular to the Z direction, and the second centering unit 4 is located in the X direction, which is perpendicular to the Z direction, and the Y direction and the X direction are also 90 degrees relative to each other.

[0053] There is no particular limitation on the condenser 1 , the movable aperture 2 , the Faraday cup 5 and the objective lens 6 , and any structure commonly used in the art may be employed.

[0054] The focused ion beam micro-nano processing system integrating the beam gate and the centering unit further includes a control unit (not shown), which is electrically connected to the first centering unit 3 and the second centering unit 4 respectively, and is used to control the first centering unit and the second centering unit to form a deflection electric field.

[0055] In a focused ion beam micro-nano processing system with an integrated beam gate and a centering unit in one embodiment, a control unit is used to control the aforementioned first centering unit 3 to form a first deflection electric field, and the aforementioned first deflection electric field is used to apply the first force to the ion beam. The control unit is also used to control the aforementioned second centering unit 4 to form a second deflection electric field, and the aforementioned second deflection electric field is used to apply the second force to the ion beam. The control unit is also used to control the aforementioned second centering unit 4 to form a third deflection electric field, and the aforementioned third deflection electric field is used to apply the third force to the ion beam.

[0056] In a focused ion beam micro-nano processing system integrating a beam gate and a centering unit according to an embodiment of the present invention, Figure 2 As shown, the first centering unit 3 includes a housing 101, a pair of electrode sheets 102, an insulating ceramic ring 103, two insulating ceramic sheets 104, two terminal pins 105, two fixing sheets 106, and two terminal pin washers 107. Alternatively, the first centering unit 3 and the second centering unit 4 can be assembled into a single unit.

[0057] In the beamlet and centering unit integrated focused ion beam micro-nano processing system of one embodiment, the electrode sheet 102 can be a fan shape, precisely assembled on the insulating ceramic ring 103 by gap fitting, and axially positioned with each other by the wire nail 105. The insulating ceramic ring 103 is installed in the housing 101 by gap fitting, and the two insulating ceramic rings 103 are also positioned by the wire nail 105 to ensure concentricity. In addition, the insulating ceramic sheets 104 are installed at the upper and lower ends of the centering unit, and are assembled with the housing 101 by gap fitting. The two fixed sheets 106 are respectively placed at the upper and lower port positions of the centering unit, and are connected with the housing 101 by interference fitting to provide firm constraint and accurate center positioning. The end surface of the fixed sheet 106 is flush with the end surface of the housing 101, thereby effectively limiting the freedom of the electrode sheet 102, the insulating ceramic ring 103, and the insulating ceramic sheet 104 in the axial direction, and ensuring the rigidity and stability of the overall structure. Figure 4 A cross-sectional view of a first centering unit used in the beamlet and centering unit integrated focused ion beam micro-nano processing system of one embodiment is shown.

[0058] The structure of the second centering unit 4 is the same as that of the first centering unit 3, and therefore, the above-described Figures 2-4 structure can also be adopted.

[0059] In addition, as described above, the first centering unit 3 and the second centering unit 4 are configured in radial orthogonality in the focused ion beam micro-nano processing system, Figure 5 A cross-sectional view of the first centering unit 3 and the second centering unit 4 thus configured is shown.

[0060] [Control method of ion beam]

[0061] In the control method of the ion beam of some embodiments, the above-described beamlet and centering unit integrated focused ion beam micro-nano processing system is used,

[0062] the control unit is used to make the first centering unit 3 form a first deflection electric field, to apply the first force to the ion beam, and to make the ion beam produce a micron-level displacement in the corresponding radial direction; and

[0063] the control unit is used to make the second centering unit 4 form a second deflection electric field, to apply the second force to the ion beam, and to make the ion beam produce a micron-level displacement in the corresponding radial direction.

[0064] In the case of processing by using the above-described focused ion beam micro-nano processing system, the ion beam is transmitted along the axial direction from top to bottom, first passes through the condenser lens 1 and the movable diaphragm 2, then passes through the first centering unit 3, the second centering unit 4, the Faraday cup 5, and the objective lens 6, and finally reaches the sample surface placed on the sample stage, to process the sample.

[0065] In the above-described processing, the following control method can be used. That is, the first deflection electric field is applied to the first pair of centering units 3 by the control unit, and the first deflection electric field applies a first force to the ion beam so that the ion beam after passing through the first pair of centering units 3 is displaced by a micron order in the Y direction with respect to the passing front so as to be closer to the central axis, and the second deflection electric field is applied to the second pair of centering units 4 by the control unit, and the second deflection electric field applies a second force to the ion beam so that the ion beam after passing through the second pair of centering units 4 is displaced by a micron order in the X direction with respect to the passing front so as to be closer to the central axis. In this case, the first pair of centering units 3 and the second pair of centering units 4 are both centering units that make the ion beam closer to the central axis in the Y direction and the X direction, respectively.

[0066] Figure 6 is a schematic diagram of the principle of the first pair of centering units functioning as a centering function. As shown in Figure 6 , a is the distance between the two electrode plates of the centering unit, b is the length of the electrode plates in the axial direction, and c1 represents the distance from the lower end surface of the first pair of centering units to the upper end surface of the beam shutter. When the first deflection electric field or the second deflection electric field is formed between the two electrode plates of the centering unit, the first deflection electric field or the second deflection electric field has the effect of making the ion beam closer to the central axis, and thus the electric field strength is relatively weak. The ion beam is deflected under the action of the first deflection electric field or the second deflection electric field, and is displaced by d1 in the radial direction, and by applying the first deflection electric field or the second deflection electric field, the ion beam that was originally offset from the central axis is brought closer to the central axis.

[0067] The size of the Y direction displacement and the X direction displacement d1 can be set as needed.

[0068] The size of the first force can be adjusted by the control unit to adjust the size of the displacement of the ion beam in the Y direction. The displacement is micron order, for example, in the range of 1 to 50 microns.

[0069] The size of the second force can be adjusted by the control unit to adjust the size of the displacement of the ion beam in the X direction. The displacement is micron order, for example, in the range of 1 to 50 microns.

[0070] During the aforementioned processing, it may sometimes be necessary to shut down the ion beam. The following control method can be used. Specifically, a control unit is used to change the electric field formed by the second centering unit 4 from the second deflection field to the third deflection field, thereby changing the force applied to the ion beam from the second force to the third force, causing the ion beam to deviate from the central axis and thereby interrupt ion beam propagation. The second force acts to cause the ion beam to shift micrometers in the X direction, bringing it closer to the central axis, while the third force acts to deviate the ion beam from the central axis. Therefore, the third force is greater than the second force. By applying a voltage higher than the voltage required to generate the second force to the second centering unit 4, the control unit can change the electric field formed by the second centering unit 4 from the second deflection field to the third deflection field, thereby changing the force applied to the ion beam from the second force to the third force. Through this control method, the second centering unit 4 is transformed from a centering unit to a beam gate.

[0071] Figure 7 This is a diagram explaining the principle of the second centering unit performing the beam brake function. Figure 7 As shown, a is the spacing between the two electrodes of the second centering unit, b is the axial length of the electrode, and c2 represents the distance from the lower end surface of the electrode plate of the second centering unit to the upper end surface of the beam gate aperture. When a third deflection electric field is formed between the two electrodes of the second centering unit, the third deflection electric field causes the ion beam to deviate from the central axis by a radial displacement of d2. By applying the third deflection electric field, the ion beam originally located at the central axis deviates by a radial displacement of d2, thereby deviating from the aperture of the Faraday cup 5.

[0072] In the aforementioned case of shutting off the ion beam, the first centering unit 3 is controlled by the control unit to form a first deflection electric field, thereby applying a first force to the ion beam.

[0073] At the end of the aforementioned state of turning off the ion beam, the system needs to turn on the ion beam to the state of processing. In this case, the following control method can be used: the control unit changes the electric field formed by the second centering unit 4 from the third deflection electric field to the second deflection electric field, so that the force applied to the ion beam changes from the third force to the second force, and the ion beam changes from the state of deviating from the central axis to the state of generating micron-level displacement in the X direction so that the ion beam propagates along the central axis. Since the aforementioned third force is greater than the aforementioned second force, the second centering unit 4 can be changed from the third deflection electric field to the second deflection electric field by applying a lower voltage to the second centering unit 4 than the voltage required to generate the third force, so that the force applied to the ion beam changes from the third force to the second force. By the aforementioned control method, the second centering unit 4 is changed from a beam shutter to a centering unit.

[0074] In the aforementioned control method of turning on the ion beam to the state of processing, the first centering unit 3 is controlled by the control unit to form the first deflection electric field, so that the ion beam is applied with the first force.

[0075] In order to evaluate the centering accuracy and ion beam closing response time of the aforementioned focused ion beam micro-nano processing system, and confirm whether the system performance meets the design index, the optimal case under different voltages is calculated, and the parameters of the first centering unit and the second centering unit are recorded respectively, and the results are shown in Tables 1-3. The response time does not consider the real-time performance of the control system, the characteristics of the ion beam, and the signal transmission path, etc., but only calculates the response time of the driving circuit.

[0076] Wherein, the beam deflection amount can be calculated according to the following formula:

[0077] d = U·b(b / 2+c) / U a / a (1)

[0078] Wherein a is the distance between the plates, b is the length of the plate, c represents the distance from the lower end of the plate to the upper end of the beam shutter diaphragm, and d is the beam deflection amount.

[0079] Table 1 Relationship between beam deflection amount in Y direction and voltage when the first centering unit is used as a centering unit

[0080] Plate voltage / V Beam deflection / mm Response time / ns 10 0.180 0.2 20 0.359 0.4 30 0.539 0.6 40 0.718 0.8 50 0.898 1.0

[0081] Table 2 Relationship between beam deflection amount in X direction and voltage when the second centering unit is used as a centering unit

[0082] Plate voltage / V Beam deflection / mm Response time / ns 10 0.158 0.2 20 0.316 0.4 30 0.473 0.6 40 0.631 0.8 50 0.789 1.0

[0083] Table 3 Beam deflection amount and voltage when the second centering unit is used as a beam shutter

[0084] Plate voltage / V Beam deflection / mm Response time / ns 50 0.789 1.0 75 1.020 1.5 100 1.578 2.0 125 1.701 2.5 150 2.041 3.0 175 2.381 3.5 200 2.721 4.0

[0085] According to Tables 1-3, the ion beam deflection amount and the plate driving voltage are in a non-linear positive correlation, a double-mode synergistic mechanism of "high-voltage fast cutoff + micro-voltage fine centering" is achieved, and the second centering unit functions as a beam shutter. When the electrode sheet of the second centering unit is applied with a high voltage of about 200 V, the ion beam can be quickly cut off. When the first centering unit and the second centering unit function to center, a high sensitivity regulation characteristic of 0.0158 mm / V is exhibited when a voltage below 50 V is applied, and accurate axis alignment can be achieved.

[0086] The present disclosure is not limited to the above-described embodiments, and for those skilled in the art, several improvements and refinements can be made without departing from the principles of the present disclosure, and these improvements and refinements are also considered to be within the protection scope of the present disclosure. The contents not described in detail in the specification belong to the prior art known to those skilled in the art.

[0087] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A focused ion beam micro-nano processing system with an integrated beam gate and centering unit, characterized in that: The focused ion beam micro-nano processing system comprises a first centering unit (3), a second centering unit (4), a Faraday cup (5) and a control unit. The control unit is electrically connected to the first centering unit (3) and the second centering unit (4) respectively, and is used to control the first centering unit (3) and the second centering unit (4) to form a deflection electric field; The first centering unit (3) and the second centering unit (4) are both arranged in a direction perpendicular to the central axis of the focused ion beam micro-nano processing system and are arranged radially orthogonally. The second centering unit (4) is arranged below the first centering unit (3), and the Faraday cup (5) is arranged below the second centering unit (4). The first centering unit (3) is controlled to apply a first force to the ion beam for generating a micrometer-level displacement in a corresponding radial direction or to cancel the applied first force; The second centering unit (4) is controlled to apply a second force to the ion beam for generating micrometer-level displacement in a corresponding radial direction, a third force for causing the ion beam to deviate from the aperture of the Faraday cup (5) to block ion beam propagation, or cancel the applied force.

2. The focused ion beam micro-nano processing system with integrated beam gate and centering unit according to claim 1, characterized in that: The control unit is used to control the first centering unit (3) to form a first deflection electric field, and the first deflection electric field is used to apply the first force to the ion beam. The control unit is used to control the second centering unit (4) to form a second deflection electric field, and the second deflection electric field is used to apply the second force to the ion beam. The control unit is used to control the second centering unit (4) to form a third deflection electric field, and the third deflection electric field is used to apply the third force to the ion beam.

3. The focused ion beam micro-nano processing system with integrated beam gate and centering unit according to claim 1, characterized in that: The first centering unit (3) and the second centering unit (4) have the same structure, both comprising a housing (101), two sector-shaped electrode sheets (102), an insulating ceramic ring (103), an insulating ceramic sheet (104), and a fixing sheet (106). The electrode sheet (102) is assembled on the insulating ceramic ring (103) through clearance fit and is axially positioned by a terminal pin (105); The insulating ceramic ring (103) is installed in the housing (101) through clearance fit and is positioned by a terminal pin (105); The fixing plate (106) is fixed to the upper and lower ends of the first centering unit (3) or the second centering unit (4) by interference fit, and its end face is flush with the end face of the housing (101), and is used to limit the axial freedom of the electrode plate (102), the insulating ceramic ring (103) and the insulating ceramic plate (104).

4. The focused ion beam micro-nano processing system with integrated beam gate and centering unit according to claim 1, characterized in that: It comprises a condenser (1), a movable diaphragm (2), the first centering unit (3), the second centering unit (4), a Faraday cup (5), and an objective lens (6), which are arranged in sequence from top to bottom.

5. A method for controlling an ion beam, characterized in that: A focused ion beam micro-nano processing system using the integrated beam gate and centering unit according to any one of claims 1 to 4, and Using a control unit, the first centering unit generates a first deflection electric field, and applies the first force to the ion beam, so that the ion beam generates a micron-level displacement in a corresponding radial direction; as well as, The control unit is used to enable the second centering unit to form a second deflection electric field, and to apply the second force to the ion beam, so that the ion beam generates a micron-level displacement in the corresponding radial direction.

6. A method for controlling an ion beam, characterized in that: A focused ion beam micro-nano processing system using the integrated beam gate and centering unit according to any one of claims 1 to 4, and The control unit is used to change the electric field formed by the second centering unit from the second deflection electric field to the third deflection electric field, thereby changing the force applied to the ion beam from the second force to the third force, causing the ion beam to deviate from the central axis to block the propagation of the ion beam.

7. The control method of the focused ion beam micro-nano processing system with integrated beam gate and centering unit according to claim 6, characterized in that: The first centering unit is controlled by the control unit to form a first deflection electric field, and the first force is applied to the ion beam.

8. A method for controlling an ion beam, characterized in that: A focused ion beam micro-nano processing system using the integrated beam gate and centering unit according to any one of claims 1 to 4, and The control unit is used to change the electric field formed by the second centering unit from the third deflection electric field to the second deflection electric field, thereby changing the force applied to the ion beam from the third force to the second force, so that the ion beam changes from a state of deviating from the central axis to a state of producing a micron-level displacement in the corresponding axial direction, thereby causing the ion beam to propagate along the central axis.

9. The control method of the focused ion beam micro-nano processing system with integrated beam gate and centering unit according to claim 8, characterized in that: The first centering unit is controlled by the control unit to form a first deflection electric field, and the first force is applied to the ion beam.

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