Miniaturized high-reliability high-power transceiving assembly

Abstract

The invention particularly relates to a miniaturized high-reliability high-power transceiving assembly, which comprises a phase shifter W1, a low-power switch S1, a power slide glass and a high-power switch S2 which are connected in sequence, the power slide comprises a driving amplifier A1, a low-power bridge W2, a final amplifier, a high-power bridge W3 and a high-power load R2 which are connected in sequence; wherein the high-power bridge W3 is connected in series with the amplitude limiter N1 and the low-noise amplifier A4 through the high-power switch S2 and then is connected with the low-power switch S1. Through the combination design of the high-power switch and the balanced amplification high-power slide glass, the high-standing-wave-resistant and high-reliability assembly is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of transceiver assembly, in particular to a miniaturized high-reliability high-power transceiver assembly. BACKGROUND

[0002] In the related art, the core component of the phased array radar is the transceiver assembly, and the reliability of the transceiver assembly directly affects the performance of the radar, so the reliability design of the transceiver assembly is one of the key technologies of the phased array radar design. One of the determinants of the power of the phased array radar is the transmit output power of the transceiver assembly, and the high-power transceiver assembly not only needs to provide large power output, but also must ensure reliability and stability. With the change of the functional requirements of the phased array radar, miniaturized high-power high-reliability radar will be the development direction of future phased array radar, therefore, miniaturized high-reliability high-power assembly will be the development direction of future transceiver assembly. The use environment of the phased array radar is diversified, and the appearance of the near-distance large reflector leads to the strong standing wave reflection phenomenon of the full reflection of the output port of the transceiver assembly, and the strong standing wave resistance of the transceiver assembly is one of the key indicators for testing the reliability of the transceiver assembly. The miniaturization, high power, high reliability and other requirements of the phased array radar promote the development of the transceiver assembly to miniaturized high-reliability high-power.

[0003] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present application, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0004] The present application provides a miniaturized high-reliability high-power transceiver assembly, which realizes miniaturized design and improves product reliability, thereby overcoming the defects in the prior art to some extent.

[0005] Other characteristics and advantages of the present application will become apparent from the following detailed description, or will be learned by practice of the present application.

[0006] According to a first aspect of the present application, a miniaturized high-reliability high-power transceiver assembly is provided, comprising, in sequence: a phase shifter W1, a low-power switch S1, a power carrier sheet, a high-power switch S2; The power carrier sheet comprises, in sequence: a drive amplifier A1, a low-power bridge W2, a final stage amplifier, a high-power bridge W3, and a high-power load R2; The high-power bridge W3 is connected with the low-power switch S1 through the high-power switch S2 and the limiter N1 and the low-noise amplifier A4 connected in series.

[0007] In some example embodiments, the final stage amplifier comprises a first final stage amplifier A2 and a second final stage amplifier A3 connected in parallel. The first output end of the low-power bridge W2 is connected with the input end of the first final amplifier A2, and the second output end of the low-power bridge W2 is connected with the input end of the second final amplifier A3. The output end of the first final amplifier A2 is connected with the first input end of the high-power bridge W3, and the output end of the second final amplifier A3 is connected with the second input end of the high-power bridge W3.

[0008] In some example embodiments, the first input end of the low-power bridge W2 is connected with the output end of the driving amplifier A1, and the second input end of the low-power bridge W2 is connected with the ground end through the low-power load R1.

[0009] In some example embodiments, the first output end of the high-power bridge W3 is connected with the first end of the high-power switch S2. The second output end of the high-power bridge W3 is connected with the ground end through the high-power load R2.

[0010] In some example embodiments, the first end of the low-power switch S1 is connected with the phase shifter W1, the second end of the low-power switch S1 is connected with the driving amplifier A1, and the third end of the low-power switch S1 is connected with the low-noise amplifier A4.

[0011] In some example embodiments, the first end of the high-power switch S2 is connected with the first output end of the high-power bridge W3, the second end of the high-power switch S2 is connected with the ground end through the second coaxial connector XS02, and the third end of the high-power switch S2 is connected with the limiter N1.

[0012] In some example embodiments, the phase shifter W1 is connected with the signal input end through the first coaxial connector XS01.

[0013] In some example embodiments, the transceiving assembly further comprises: The power supply and control circuit is connected with the transceiving assembly through the micro-distance type connector XS03, and is used for transmitting power supply signals and control signals.

[0014] In some example embodiments, the transceiving assembly further comprises a housing, and the circuit corresponding to the transceiving assembly and the power supply and control circuit are arranged in the housing.

[0015] In some example embodiments, the assembly is realized by adopting the multi-chip carrier wafer packaging mode for a plurality of devices.

[0016] The miniaturized high-reliability high-power transceiving assembly provided by the embodiment of the application realizes balanced high-power carrier by arranging a small-power bridge W2 and a high-power bridge W3 in the power carrier, and in combination with a high-power switch S2, the high-power transceiving assembly can be protected from damage when high-reflection power is encountered (high standing wave ratio phenomenon), thereby realizing miniaturization and high reliability of the transceiving assembly.

[0017] It should be understood that the foregoing general description and the following detailed description are only exemplary and explanatory and are not restrictive of the application. BRIEF DESCRIPTION OF DRAWINGS

[0018] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and serve to explain the principles of the application. It is readily apparent to one of ordinary skill in the art that the accompanying drawings are merely illustrative of some embodiments of the application and that additional embodiments of the application can be obtained from these drawings, without paying creative labor.

[0019] Figure 1 The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and serve to explain the principles of the application. It is readily apparent to one of ordinary skill in the art that the accompanying drawings are merely illustrative of some embodiments of the application and that additional embodiments of the application can be obtained from these drawings, without paying creative labor. DETAILED DESCRIPTION

[0020] In order to make the objects, technical solutions and advantages of the application clearer, the specific embodiments of the application are further described in detail below with reference to the drawings. It should be understood that the specific embodiments described herein are merely used to explain the application, but not to limit the application. In addition, it should be noted that, for the purpose of description, only the parts related to the application are shown in the drawings, but not all the parts. In the description of the embodiments of the application, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood in a broad sense, for example, it can be fixedly connected, or detachably connected, or integrated; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances. In addition, the drawings are schematic illustrations of the application.

[0021] In view of the shortcomings and deficiencies of the prior art, the miniaturized high-reliability high-power transceiving assembly provided in the example embodiment is applied to a phased array radar.

[0022] REFERENCE Figure 1As shown, the miniaturized high-reliability high-power transceiver assembly comprises a phase shifter W1, a low-power bridge W2, a high-power bridge W3, a low-power load R1, a high-power load R2, a low-power switch S1, a high-power switch S2, a driver amplifier A1, a final amplifier A2, A3, a limiter N1, a low-noise amplifier A4, a power supply and control circuit, coaxial connectors XS01, XS02, a micro-distance connector XS03 and a housing. Among them, the power carrier sheet comprises a driver amplifier A1, a low-power bridge W2, a final amplifier, a high-power bridge W3 and a high-power load R2 connected in sequence.

[0023] Specifically, one end of the phase shifter W1 is connected with the signal input end through the first coaxial connector XS01; the other end of the phase shifter W1 is connected with the first end of the low-power switch S1, the second end of the low-power switch S1 is connected with the driver amplifier A1; the third end of the low-power switch S1 is connected with the low-noise amplifier A4.

[0024] The first input end of the low-power bridge W2 is connected with the output end of the driver amplifier A1, and the second input end of the low-power bridge W2 is connected with the ground end through the low-power load R1. The first output end of the low-power bridge W2 is connected with the input end of the first final amplifier A2, and the second output end of the low-power bridge W2 is connected with the input end of the second final amplifier A3.

[0025] The output end of the first final amplifier A2 is connected with the first input end of the high-power bridge W3; the output end of the second final amplifier A3 is connected with the second input end of the high-power bridge W3. The first output end of the high-power bridge W3 is connected with the first end of the high-power switch S2; the second output end of the high-power bridge W3 is connected with the ground end through the high-power load R2.

[0026] The second end of the high-power switch S2 is connected with the ground end through the second coaxial connector XS02; the third end of the high-power switch S2 is connected with the limiter N1. The high-power bridge W3 is connected with the limiter N1 and the low-noise amplifier A4 in series through the high-power switch S2, and is connected with the low-power switch S1.

[0027] The power supply and control circuit are connected with the transceiver assembly through the micro-distance connector XS03 for transmitting power signals and control signals. The corresponding circuit of the transceiver assembly, the power supply and control circuit are arranged in the housing.

[0028] For example, the assembly is realized by packaging multiple devices in a multi-chip carrier sheet.

[0029] Specifically, in the transmitting state, the transceiving assembly is in the state of strong reflection and high standing wave at the output port, the output power of the final amplifiers A2 and A3 is absorbed by the high-power load R2 through the high-power bridge W3, and the reflected power is fed back to the final amplifiers A2 and A3 through the high-power switch S2 and the high-power bridge W3, a small part of which is absorbed by the two amplifiers, and most of which is absorbed by the high-power load R2.

[0030] In the receiving state, a small part of the transmitted power is absorbed by the two final amplifiers, and most of the power is absorbed by the high-power load R2 through the high-power bridge W3, thereby achieving the protection of the assembly in the state of strong reflection and high standing wave, and improving the reliability of the assembly.

[0031] Specifically, the phase shifter W1 can realize the function of adjusting the phase of the transmitting and receiving signals in time. The driver amplifier A1 can realize the function of amplifying the transmitting signal. The final amplifiers A2 and A3 can realize the function of amplifying the transmitting power signal. The low-power bridge W2 can realize the function of power distribution of the transmitting signal of the driver amplifier A1. The low-power load R1 can realize the function of absorbing the mismatched power in the case of mismatch of the two power distribution paths of the low-power bridge W2. The high-power bridge W3 can realize the function of power combination of the transmitting signals of the two final amplifiers A2 and A3. The high-power load R2 can realize the function of absorbing the mismatched power in the case of port mismatch of the high-power bridge W3. The low-power switch S1 and the high-power switch S2 can realize the function of switching the transmitting and receiving signals. The limiter N1 can realize the function of reflecting high-power limiting. The low-noise amplifier A4 can realize the function of low-noise amplification of the receiving signal. The power supply and control circuit can realize the functions of power modulation, control and protection. The coaxial connectors XS01 and XS02 can be used for transmission of radio frequency signals, and the micro-distance connector XS03 can be used for transmission of power and control signals. By assembling the assembly in the shell, the functions of shielding, isolation and heat dissipation can be realized.

[0032] The state of strong reflection and high standing wave mainly refers to the mismatch state of the output port of the transceiving assembly. In the transmitting state, the output port of the high-power switch is mismatched. In the receiving state, the limiter N1 is fully reflected.

[0033] Exemplarily, in order to realize miniaturization and high power, the transceiving assembly is multi-stage power division, amplification and power synthesis on a power carrier, realizing miniaturization and high power carrier. The transmitting signal input is amplified by the driver amplifier A1 and output, and is power divided by the low-power bridge W2 into two paths, and is amplified by the final stage amplifiers A2 and A3 and output, and is input to the high-power bridge W3 for synthesis and output by the high-power switch S2. The receiving signal is input to the limiter N1 by the high-power switch S2, and is output by the low-noise amplifier A4, the low-power switch S1 and the phase shifter W1. The phase shifter W1, the driver amplifier A1, the low-power bridge W2, the final stage amplifiers A2 and A3, the high-power bridge W3, the high-power switch S2, the limiter N1 and the low-noise amplifier A4 are all MMIC (Monolithic Microwave Integrated Circuit, i.e. chip), and are integrated on the limited carrier by micro assembly technology (soldering, assembling and bonding).

[0034] In order to realize miniaturization and high reliability, mainly aiming at high standing wave phenomenon, the high-power switch S2 and the balanced high-power carrier are combined in the design to ensure self-protection when the transceiving assembly encounters high reflected power (high standing wave ratio phenomenon) and is not damaged.

[0035] The following analyzes various states of the transceiving assembly by three examples.

[0036] Example 1: When the transceiving assembly output does not encounter high reflected power, the impedance of each device port is approximately 50 ohms, the transmitting signal is output by the driver amplifier A1 as , and is output by the low-power bridge W2 as and , and is output by the final stage amplifiers A2 and A3, respectively. Assuming that the gain and phase delay of the final stage amplifiers A2 and A3 are consistent, the output signal of the final stage amplifier A2 is , the output signal of the final stage amplifier A3 is , N is the voltage amplification multiple of the final stage amplifiers A2 and A3, at this time, the high-power bridge W3 is in a matching state (ideal complete matching state), the synthesized port signal of the high-power bridge W3 is , the synthesized port signal of the bridge is also , the two signals are synthesized and output as , and finally output by the high-power switch S2. (The influence of inconsistency of devices and device insertion loss is not considered here) Example two, when the transceiver component is in the transmitting state and encounters high reflected power, the high power reflected signal passes through the high power switch S2 to the high power bridge W3 synthesis port, at this time the high power bridge W3 synthesis port is in a mismatched state (ideal complete mismatched state), the port is in a full transmitting state, and the high power reflected signal is fully reflected at the high power bridge W3 synthesis port. The transmitting signal is output by the driver amplifier A1 as , and passes through the low power bridge W2 to output signals as and , respectively. Assuming that the gain and phase delay of the final amplifiers A2 and A3 are consistent, the output signal passing through the final amplifier A2 is , and the output signal passing through the final amplifier A3 is . The two signals reaching the high power bridge W3 synthesis port are , and the signals are equal in amplitude and in phase. At this time, the high power bridge W3 synthesis port is in a mismatched state, and the output signal is partially synthesized by the high power bridge W3 synthesis port, wherein a part of the signal is reflected back to the output ports of the final amplifiers A2 and A3, and the signals are and (the amplitude of the reflected signal is smaller than that of the output signal, and the amplitude here is N1). At this time, the output ports of the final amplifiers A2 and A3 are also in a mismatched state, and a part of the signal is reversely transmitted to the isolation ports of the low power bridge W2 through the final amplifiers A2 and A3 and is absorbed by the load R2. Another part of the signal is reflected at the output ports of the final amplifiers A2 and A3 and is transmitted to the isolation ports of the high power bridge W3 and is absorbed by the load R3.

[0037] During the process, the reflected signal energy is basically absorbed by the loads R2 and R3, the amplifiers bear less energy, the final amplifiers A2 and A3 are protected from being damaged, and the reliability of the transceiver component is improved.

[0038] Example three, when the transceiver component is in the receiving state and encounters high reflected power, the high power reflected signal passes through the high power switch S2 to the limiter N1, the limiter N1 is a reflected limiter, and the transmitting signal is output through the high power switch S2.

[0039] Through the above examples, it is shown that the reliability of the miniaturized high power transceiver component is guaranteed in different states.

[0040] The present application aims at the reliability problem of the miniaturized high power transceiver component, proposes a combination of the high power switch and the balanced high power carrier sheet, improves the anti-stationary wave capability of the component, effectively guarantees the product reliability, and at the same time, performs miniaturized design, and realizes the miniaturized high reliability high power transceiver component.

[0041] The transceiving assembly provided by the application realizes high-power assembly by adopting multi-chip synthesis. Multi-chip carrier wafer packaging is adopted inside the assembly, and the high-power switch also adopts chip form. Compared with the size of the conventional circulator, the size of the high-power switch S2 is reduced by at least 9 / 10 under the condition that the transceiving isolation degree and the bearing power meet the requirements, so that a small-sized assembly is realized. In addition, the combination design of the high-power switch and the balanced amplification high-power carrier wafer is adopted inside the assembly, so that a high-reliability assembly capable of resisting high standing wave is realized.

[0042] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the application being indicated by the following claims.

[0043] It should be understood that the application is not limited to the precise construction that has been described above and shown in the accompanying drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application is indicated only by the appended claims.

Claims

1. A miniaturized, high-reliability, high-power transceiver component, characterized in that: It includes the following connected in sequence: phase shifter W1, low power switch S1, power carrier, high power switch S2; The power carrier includes a driving amplifier A1, a low-power bridge W2, a final amplifier, a high-power bridge W3, and a high-power load R2 connected in sequence; The high-power bridge W3 is connected in series with the limiter N1 and the low-noise amplifier A4 through the high-power switch S2 and then connected to the low-power switch S1.

2. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: The final amplifier includes a first final amplifier A2 and a second final amplifier A3 connected in parallel; The first output end of the low-power bridge W2 is connected to the input end of the first final-stage amplifier A2, and the second output end of the low-power bridge W2 is connected to the input end of the second final-stage amplifier A3; The output end of the first final stage amplifier A2 is connected to the first input end of the high power bridge W3 ; the output end of the second final stage amplifier A3 is connected to the second input end of the high power bridge W3 .

3. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: A first input end of the low-power bridge W2 is connected to the output end of the driving amplifier A1 , and a second input end of the low-power bridge W2 is connected to the ground end through the low-power load R1 .

4. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: The first output terminal of the high-power bridge W3 is connected to the first terminal of the high-power switch S2; The second output terminal of the high-power bridge W3 is connected to the ground terminal through the high-power load R2.

5. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: A first terminal of the low-power switch S1 is connected to the phase shifter W1 , a second terminal of the low-power switch S1 is connected to the driving amplifier A1 , and a third terminal of the low-power switch S1 is connected to the low-noise amplifier A4 .

6. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: A first end of the high power switch S2 is connected to the first output end of the high power bridge W3 ; a second end of the high power switch S2 is connected to the ground end via a second coaxial connector XS02 ; and a third end of the high power switch S2 is connected to the limiter N1 .

7. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: The phase shifter W1 is connected to the signal input terminal through a first coaxial connector XS01.

8. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: The transceiver components also include: The power supply and control circuit is connected to the transceiver component through the macro connector XS03 for transmitting power signals and control signals.

9. The miniaturized, high-reliability, high-power transceiver assembly according to claim 8, characterized in that: The transceiver assembly further includes: a housing; wherein the circuit, power supply and control circuit corresponding to the transceiver assembly are arranged in the housing.

10. The miniaturized, high-reliability, high-power transceiver assembly according to claim 1, characterized in that: The assembly is realized by packaging multiple devices in a multi-chip carrier package.

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