Light-emitting device and image display device

Abstract

A light-emitting device according to one embodiment of the present disclosure is provided with: a light-emitting unit in which a plurality of light-emitting elements are arranged in an array; a light control unit that has an inorganic layer that is provided on the light emission surface side of the plurality of light-emitting elements and that has a first opening above each of the plurality of light-emitting elements, and an organic layer that is provided in the first opening, and that controls at least one of the wavelength, scattering, and emission direction of light emitted from the plurality of light-emitting elements; and a cover section that is provided on a surface of the light control section on the opposite side from the light-emitting section, protects the light control section, contains an inorganic material, and is in contact with the inorganic layer.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device and an image display device including the light-emitting device. Background Art

[0002] For example, Patent Document 1 discloses a display device in which a blue reflective layer is directly stacked on a red conversion section and a green conversion section.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2021-96362. Summary of the Invention

[0006] Furthermore, image display devices using minute light-emitting diodes (LEDs) as light sources for display pixels are required to have improved reliability.

[0007] It is desirable to provide a light-emitting device and an image display device that can improve reliability.

[0008] A light-emitting device in one embodiment of the present disclosure comprises: a light-emitting portion, wherein a plurality of light-emitting elements are arranged in an array; a light-control portion, wherein the light-control portion comprises an inorganic layer provided on the light-emitting surface side of the plurality of light-emitting elements and having a first opening above each of the plurality of light-emitting elements, and an organic layer provided in the first opening, wherein the light-control portion controls at least one of the wavelength, scattering, and emission direction of light emitted from the plurality of light-emitting elements; and a covering portion, wherein the covering portion is provided on a surface of the light-control portion opposite to the light-emitting portion, protects the light-control portion, comprises an inorganic material, and is in contact with the inorganic layer.

[0009] An image display device according to one embodiment of the present disclosure includes a light-emitting device including the light-emitting device according to one embodiment of the present disclosure as the light-emitting device.

[0010] In a light-emitting device and an image display device according to one embodiment of the present disclosure, an inorganic layer formed between adjacent light-emitting elements in a light-control unit disposed on the light-emitting surface side of the plurality of light-emitting elements is in contact with a covering portion comprising an inorganic material and protecting the light-control unit. This improves the adhesion between the light-control unit and the covering portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 1 is a schematic cross-sectional view illustrating an example of the structure of a light-emitting device according to an embodiment of the present disclosure.

[0012] Figure 2 It shows Figure 1Schematic diagram of an example of the overall planar structure of the light emitting device shown.

[0013] Figure 3 It will Figure 2 The diagram is a partially enlarged schematic diagram of a top view of the light emitting device.

[0014] Figure 4 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to one embodiment of the present disclosure.

[0015] Figure 5A It is an explanation Figure 1 Schematic cross-sectional view of an example of a manufacturing process of a light-emitting device shown.

[0016] Figure 5B It shows Figure 5A Schematic cross-sectional view of the subsequent steps.

[0017] Figure 5C It shows Figure 5B Schematic cross-sectional view of the subsequent steps.

[0018] Figure 5D It shows Figure 5C Schematic cross-sectional view of the subsequent steps.

[0019] Figure 5E It shows Figure 5D Schematic cross-sectional view of the subsequent steps.

[0020] Figure 5F It shows Figure 5E Schematic cross-sectional view of the subsequent steps.

[0021] Figure 6 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 1 of the present disclosure.

[0022] Figure 7 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 1 of the present disclosure.

[0023] Figure 8 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 2 of the present disclosure.

[0024] Figure 9 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 2 of the present disclosure.

[0025] Figure 10A It is an explanation Figure 8 Schematic cross-sectional view of an example of a manufacturing process of a light-emitting device shown.

[0026] Figure 10B It shows Figure 10A Schematic cross-sectional view of the subsequent steps.

[0027] Figure 11 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 3 of the present disclosure.

[0028] Figure 12 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 3 of the present disclosure.

[0029] Figure 13A It is an explanation Figure 11 Schematic cross-sectional view of an example of a manufacturing process of a light-emitting device shown.

[0030] Figure 13B It shows Figure 13A Schematic cross-sectional view of the subsequent steps.

[0031] Figure 13C It shows Figure 13B Schematic cross-sectional view of the subsequent steps.

[0032] Figure 13D It shows Figure 13C Schematic cross-sectional view of the subsequent steps.

[0033] Figure 14 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 4 of the present disclosure.

[0034] Figure 15 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 5 of the present disclosure.

[0035] Figure 16 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 5 of the present disclosure.

[0036] Figure 17 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 5 of the present disclosure.

[0037] Figure 18 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 6 of the present disclosure.

[0038] Figure 19 It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 7 of the present disclosure.

[0039] Figure 20 It is a schematic cross-sectional view showing another example of the structure of the light emitting device according to Modification 7 of the present disclosure.

[0040] Figure 21It is a schematic cross-sectional view showing an example of the structure of a light emitting device according to Modification 8 of the present disclosure.

[0041] Figure 22 It is a perspective view showing an example of the structure of an image display device according to an application example of the present disclosure.

[0042] Figure 23 It is a perspective view showing another example of the structure of the image display device according to the application example of the present disclosure. DETAILED DESCRIPTION

[0043] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following embodiments. In addition, in the present disclosure, the configuration, size, and dimensional ratio of each component shown in the various figures are not limited to these. It should be noted that the order of description is as follows.

[0044] 1. Embodiment (Example in which a protective layer is provided between the wavelength conversion region and the dielectric multilayer film, and partition walls made of an inorganic material and the protective layer are directly laminated)

[0045] 1-1. Structure of Light-Emitting Device

[0046] 1-2. Method for manufacturing a light-emitting device

[0047] 1-3. Actions and Effects

[0048] 2. Modification

[0049] 2-1. Modification 1 (Another Example of Light-Emitting Device)

[0050] 2-2. Modification 2 (Another Example of Light-Emitting Device)

[0051] 2-3. Modification 3 (Another Example of Light-Emitting Device)

[0052] 2-4. Modification 4 (Another Example of Light-Emitting Device)

[0053] 2-5. Modification 5 (Another Example of Light-Emitting Device)

[0054] 2-6. Modification 6 (Another Example of Light-Emitting Device)

[0055] 2-7. Modification 7 (Another Example of Light-Emitting Device)

[0056] 2-8. Modification 8 (Another Example of Light-Emitting Device)

[0057] 3. Application Examples

[0058] 1. Implementation Method

[0059] Figure 1 This is a diagram schematically showing an example of a cross-sectional structure of a light-emitting device according to an embodiment of the present disclosure (light-emitting device 1 ). Figure 2 It is schematically shown Figure 1 FIG. 1 is a diagram showing an example of a planar structure of the entire light emitting device 1. The light emitting device 1 can be suitably applied to an image display device called a so-called head-mounted display (e.g., head-mounted display 100, see FIG. 1 ). Figure 22 ).

[0060] (1-1. Structure of Light-Emitting Device)

[0061] The light-emitting device 1 includes a display region 100A in which a plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array, and a frame region 100B surrounding the display region 100A. For example, the light-emitting device 1 is formed by sequentially stacking a light-emitting portion 10 comprising a plurality of light-emitting elements 11 arranged in an array, a wavelength conversion portion 20 for controlling at least one of the wavelength, scattering, and emission direction of light emitted from the plurality of light-emitting elements 11, and a protective layer 31 on the surface 40S1 side of a circuit substrate 40 having opposing front surfaces (surface 40S1) and back surfaces (surface 40S2). The wavelength conversion portion 20 includes a partition wall layer 21 having openings 21H above each of the plurality of light-emitting elements 11, and a wavelength conversion layer 22 disposed within the openings 21H. In this embodiment, the partition wall layer 21 and the protective layer 31 are each formed of an inorganic material and are directly in contact with each other. A dielectric multilayer film 32 is also stacked on the protective layer 31.

[0062] The light-emitting section 10 is a specific example of a "light-emitting section" in the embodiments of the present disclosure. The wavelength conversion section 20 is a specific example of a "light control section" in the embodiments of the present disclosure. The partition wall layer 21 is a specific example of an "inorganic layer" in the embodiments of the present disclosure, and the wavelength conversion layer 22 is a specific example of an "organic layer" in the embodiments of the present disclosure. The protective layer 31 is a specific example of a "covering section" in the embodiments of the present disclosure.

[0063] As described above, the light emitting unit 10 includes a plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) arranged in a two-dimensional array in the display area 100A. Specifically, the plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array. Figure 3As shown, the display area 100A has a generally regular hexagonal top view shape, for example, arranged in a honeycomb pattern. Multiple pixels (for example, red pixel Pr, green pixel Pg, and blue pixel Pb) each include a light-emitting element 11. In other words, in the display area 100A, the multiple light-emitting elements 11, for example, having a generally regular hexagonal top view shape, are arranged in a two-dimensional array. The light-emitting portion 10 further includes: a buried layer 12 for burying the multiple light-emitting elements 11; an electrode layer 13, provided on the light-emitting surface (surface 11S1) as a common electrode for the multiple light-emitting elements 11; and an electrode layer 14, provided independently for each of the multiple light-emitting elements 11 on surface 11S2 opposite surface 11S1. For example, in the frame area 100B, the electrode layer 13 is electrically connected to wiring 15 of the circuit substrate 40, for example, formed on surface 40S1, via through-holes 16. The electrode layer 14 is electrically connected to the circuit substrate 40, for example, via through-holes 17. The light emitting section 10 further includes a planarizing layer 18 provided over the display region 100A and the frame region 100B so as to planarize the surface facing the wavelength conversion section 20 .

[0064] The light-emitting element 11 is equivalent to a specific example of a "light-emitting element" in the embodiment of the present disclosure. The light-emitting element 11 is a solid light-emitting element that emits light of a predetermined wavelength band from the surface 11S1, for example, an LED (Light Emitting Diode) chip. An LED chip refers to a chip in a state of being cut out from a wafer used for crystal growth, and is not a packaged chip covered with a molded resin or the like. The LED chip has a size of, for example, 2 μm or more and 100 μm or less, and is called a so-called micro-LED. In addition, the light-emitting element 11 may also be a LASER (Light Amplification by Stimulated Emission of Radiation).

[0065] Light-emitting element 11 is composed of a first conductivity type layer 111 and a second conductivity type layer 112 stacked in this order. A light-emitting region is formed at and near the interface between first conductivity type layer 111 and second conductivity type layer 112. Light in the blue band, for example, between 430 nm and 500 nm, is extracted from the light-emitting region. Alternatively, light with a wavelength corresponding to the ultraviolet region (ultraviolet light) may be extracted from the light-emitting region.

[0066] The light-emitting element 11 is formed, for example, from a Group III-V compound semiconductor. Specifically, the first conductivity type layer 111 is formed, for example, from a p-type GaN-based semiconductor material. The second conductivity type layer 112 is formed, for example, from an n-type GaN-based semiconductor material. In the light-emitting element 11, the upper surface of the second conductivity type layer 112 serves as the light-emitting surface (surface 11S1).

[0067] The buried layer 12 buries the plurality of light-emitting elements 11 and forms a flat top surface and a flat back surface of the light-emitting portion 10 together with the emission surfaces (surfaces 11S1) of the plurality of light-emitting elements 11. The buried layer 12 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0068] The electrode layer 13 serves as a common electrode for the multiple light-emitting elements 11. It is formed continuously on the surfaces 11S1 of each of the multiple light-emitting elements 11, extending from the display area 100A to a portion of the frame area 100B. The electrode layer 13 forms an ohmic contact with the second conductive layer 112 and is formed from a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0069] The electrode layer 14 is in ohmic contact with the first conductive type layer 111 and is formed using, for example, a multilayer film (Ni / Au) of nickel (Ni) and gold (Au), ITO, or other transparent conductive material.

[0070] The wiring 15 is provided in the frame region 100B of the circuit substrate 40, for example, so as to surround the display region 100A, and is connected to an external terminal, for example. The through-hole 16 applies a voltage to the second conductive layer 112 of each of the plurality of light-emitting elements 11 via the electrode layer 13. The through-hole 17 applies a voltage to the first conductive layer 111 of each of the plurality of light-emitting elements 11 via the electrode layer 14. The wiring 15, through-hole 16, and through-hole 17 are formed, for example, of copper (Cu), aluminum (Al), tungsten (W), gold (Au), silver (Ag), titanium (Ti), or alloys thereof. Furthermore, the wiring 15, through-hole 16, and through-hole 17 can be formed as a single-layer film or a stacked film using the above-mentioned materials. For example, by forming a Ti film or a TiN film on the surface and back surface of the wiring 15, through-hole 16, and through-hole 17, reliability such as adhesion can be improved.

[0071] The planarization layer 18 is used to planarize the surface (surface 10S1 ) of the light emitting unit 10 corresponding to the wavelength conversion unit 20. The planarization layer 18 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0072] It should be noted that the side surface of the light emitting element 11 is preferably Figure 1The inclined surface shown. Furthermore, although not shown, a laminated film of an insulating film and a light-reflecting film is preferably provided on the side surfaces of the light-emitting element 11. This reduces leakage of light emitted from the light-emitting region, for example, in an oblique direction, into adjacent pixels, and improves the efficiency of light extraction from the surface 11S1. The light-reflecting film, like the light-shielding film 34 described later, can be formed using a metal material having a high reflectivity in the visible light region, such as silver (Ag), aluminum (Al), copper (Cu), gold (Au), platinum (Pt), titanium (Ti), or alloys thereof. The insulating film can be formed using, for example, silicon oxide (SiO), silicon nitride (SiN), or the like.

[0073] The wavelength converter 20 controls at least one of the wavelength, scattering, and emission direction of light emitted from the plurality of light-emitting elements 11, and is disposed on the surface 10S1 side of the light-emitting section 10. As described above, the wavelength converter 20 includes, for example, a partition wall layer 21 having openings 21H above each of the plurality of light-emitting elements 11, and a wavelength conversion layer 22 disposed within the openings 21H. The wavelength converter 20 has a pair of opposing surfaces (surfaces 20S1 and 20S2), with the surface 20S1 opposite the light-emitting section 10 being formed as a flat surface. In other words, the surface 21S1 of the partition wall layer 21, which forms the surface 20S1 of the wavelength converter 20, and the surface 22S2 of the wavelength conversion layer 22 are formed as continuous flat surfaces.

[0074] The partition wall layer 21 is used to suppress the occurrence of color mixing caused by light leakage between adjacent RGB color pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) when the light emitting device 1 is applied to the head mounted display 100. The partition wall layer 21 has a honeycomb structure, for example. Specifically, the partition wall layer 21 is as follows: Figure 3 As shown, the wavelength converter 20 includes an opening 21H, for example, having a substantially regular hexagonal shape, for each of the plurality of light-emitting elements 11 arranged in an array. In a cross-sectional view, the opening 21H is inclined at an angle of less than 90° relative to a surface 20S2 opposite to the surface 20S1 of the wavelength converter 20. In other words, the partition wall layer 21 has a forward tapered shape between adjacent color pixels Pr, Pg, and Pb in a cross-sectional view.

[0075] The partition wall layer 21 is formed, for example, using an inorganic material containing silicon and at least one of nitrogen, oxygen, and carbon. Specifically, the partition wall layer 21 is formed, for example, from silicon nitride (SiN), silicon oxide (SiO), or silicon carbide (SiC). It should be noted that the partition wall layer 21 only needs to have an inorganic material on its surface (surface 21S1); portions other than the surface may also be formed using a material with high thermal and electrical conductivity. Specifically, portions other than the surface of the partition wall layer 21 can be formed using a light-shielding and light-reflective metal material such as copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), or platinum (Pt).

[0076] The wavelength conversion layer 22 is used to convert the light emitted from the multiple light-emitting elements 11 into desired wavelengths (e.g., red (R), green (G), or blue (B)) and emit the light. It is formed within an opening 21H provided above each light-emitting element 11. Specifically, a red wavelength conversion layer 22R is provided in each red pixel Pr to convert light emitted from the light-emitting element 11 into light in the red band (red light). A green wavelength conversion layer 22G is provided in each green pixel Pg to convert light emitted from the light-emitting element 11 into light in the green band (green light). A blue wavelength conversion layer 22B is provided in each blue pixel Pb to convert light emitted from the light-emitting element 11 into light in the blue band (blue light).

[0077] Each color wavelength conversion layer 22R, 22G, and 22B can be formed using quantum dots corresponding to each color. Specifically, to obtain red light, the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. To obtain green light, the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. To obtain blue light, the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS. Furthermore, each color wavelength conversion layer 22R, 22G, and 22B can be formed using inorganic and organic phosphors, or nanoparticles such as quantum rods.

[0078] A protective layer 31 and a dielectric multilayer film 32 are stacked in this order on the surface of the wavelength conversion unit 20 .

[0079] The protective layer 31 protects the surface of the wavelength conversion unit 20. Specifically, the protective layer 31 is not intended for optical alignment adjustment; for example, it is desirable to have moisture and oxygen resistance. Like the partition wall layer 21, the protective layer 31 is formed using, for example, an inorganic material containing silicon and at least one of nitrogen, oxygen, and carbon. Specifically, the protective layer 31 is formed from, for example, silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), aluminum oxide (AlO), or silicon carbide (SiC).

[0080] The dielectric multilayer film 32 is a laminate of two or more dielectric films with different refractive indices, forming a distributed Bragg reflector (DBR) that transmits only light of a specific wavelength. Specifically, the DBR selectively reflects light emitted from the plurality of light-emitting elements 11 that has not undergone wavelength conversion by the respective color wavelength conversion layers 22R, 22G, and 22B but has exited the surface 22S1 of the wavelength conversion layer 22 (e.g., ultraviolet light) and is then converted in wavelength by the respective color wavelength conversion layers 22R, 22G, and 22B.

[0081] The dielectric multilayer film 32 is formed, for example, by alternately stacking a plurality of silicon oxide (SiO) and niobium oxide (NbO). Alternatively, the dielectric multilayer film 32 may be formed by alternately stacking a plurality of silicon oxide (SiO) and titanium oxide (TiO2), or by alternately stacking a plurality of silicon oxide (SiO) and silicon nitride (SiN). Furthermore, the dielectric multilayer film 32 may be formed by stacking a plurality of semiconductor films having different refractive indices. For example, the semiconductor multilayer film is formed by stacking a plurality of semiconductor films having different refractive indices. x Ga y In 1-x-y As (0≤x, y≤1) and In x Ga 1-x As 1-y P y The semiconductor is formed of at least two or more refractive indices selected from (0≤x, y≤1).

[0082] Figure 4This figure schematically illustrates an example of a cross-sectional structure of a light-emitting device according to one embodiment of the present disclosure (light-emitting device 1A). A microlens layer 33 for controlling the optical path of light emitted from a plurality of pixels (e.g., red pixel Pr, green pixel Pg, and blue pixel Pb) can be formed on the dielectric multilayer film 32. The microlens layer 33 is a specific example of a "light path control unit" in the embodiments of the present disclosure. The microlens layer 33 is provided, for example, to cover the entire surface of the display area 100A and the frame area 100B, and includes, for example, a microlens 33L for each pixel. The microlens layer 33 is formed from a light-transmitting material. Specifically, the microlens layer 33 is formed, for example, from a single layer composed of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or a stacked layer composed of two or more of these materials. Furthermore, the microlens layer 33 can be formed using a resin material.

[0083] The circuit substrate 40 is provided with a drive circuit and other components that control the driving of the plurality of light-emitting elements 11 arranged in the display area 100A. A heat sink may be provided on the surface (surface 40S2) of the circuit substrate 40 opposite the surface 40S1 facing the light-emitting unit 10. The heat sink may be, for example, a metal plate with high thermal conductivity, such as Cu. Multiple heat sinks may also be provided on the metal plate.

[0084] (1-2. Method for Manufacturing Light-Emitting Device)

[0085] The light emitting device 1 of this embodiment can be manufactured as follows, for example. Figures 5A to 5F An example of a manufacturing process of the light emitting device 1 is shown.

[0086] First, if Figure 5A As shown, a partition wall layer 21 made of, for example, SiO is provided on the surface 10S1 of the light-emitting portion 10, and openings 21H are formed above each light-emitting element 11, for example, by photolithography and etching. The shape of each opening 21H can be formed into a forward tapered shape by, for example, isotropic dry etching.

[0087] Then, if Figure 5B As shown, in the plurality of openings 21H, for example, in the openings 21H of the blue pixel Pb, for example, a blue wavelength conversion layer 22B is formed using a photolithography technique and a coating method such as an inkjet method. Figure 5C As shown, in the plurality of openings 21H, for example, in the opening 21H of the green pixel Pg, a green wavelength conversion layer 22G is formed using, for example, photolithography and a coating method such as an inkjet method. Figure 5DAs shown, in the plurality of openings 21H, for example, in the openings 21H of the red pixel Pr, a red wavelength conversion layer 22R is formed using, for example, photolithography technology and a coating method such as an inkjet method.

[0088] Next, if Figure 5E As shown, for example, the wavelength conversion layers 22R, 22G, and 22B formed on the partition wall layer 21 are removed by chemical mechanical polishing (CMP) to expose the partition wall layer 21. The wavelength conversion layers 22R, 22G, and 22B and the partition wall layer 21 are then ground to form a flat surface 20S1. Specifically, for example, free abrasive particles such as aluminum oxide and silicon dioxide are combined with a polishing cloth such as urethane to perform polishing.

[0089] Then, if Figure 5F As shown, a protective layer 31 made of, for example, SiO is formed on the surface 20S1 by, for example, chemical vapor deposition (CVD). Then, a dielectric multilayer film 32 and a microlens layer 33 are sequentially formed on the protective layer 31. Thus, the Figure 1 The light emitting device 1 shown (or Figure 4 The light emitting device 1A shown).

[0090] (1-3. Actions and Effects)

[0091] In the light-emitting device 1 of this embodiment, a wavelength conversion unit 20 is provided on the surface 10S1, which serves as the light-emitting surface of the light-emitting unit 10, which is formed by arranging a plurality of light-emitting elements 11 in an array. The wavelength conversion unit 20 includes a partition wall layer 21 having openings 21H above each of the plurality of light-emitting elements 11, and a wavelength conversion layer 22 disposed within the openings 21H. Furthermore, a protective layer 31 is formed on the surface 20S1 of the wavelength conversion unit 20 opposite the light-emitting unit 10. The partition wall layer 21 and the protective layer 31 are each formed of an inorganic material and are in direct contact with each other. This improves the adhesion between the wavelength conversion unit 20 and the protective layer 31. This is described below.

[0092] In image display devices that combine a microscopic light-emitting element and a wavelength conversion layer, the wavelength conversion layer is covered with an inorganic protective film such as a silicon oxide film (SiO), and a dielectric multilayer film is further formed after the inorganic protective film is planarized.

[0093] However, in a general manufacturing process, if CMP is performed directly after forming the wavelength conversion layer and the inorganic protective film, there is a problem that film peeling is easily caused due to poor adhesion between the wavelength conversion layer and the protective layer.

[0094] In contrast, in this embodiment, the partition wall layer 21 and the protective layer 31 that constitute the wavelength conversion unit 20, which are provided between adjacent pixels and separate adjacent wavelength conversion layers 22, are directly connected. Both the partition wall layer 21 and the protective layer 31 are formed using inorganic materials. The inorganic-inorganic connection between the partition wall layer 21 and the protective layer 31 improves the adhesion between the wavelength conversion unit 20 and the protective layer 31. This can prevent the protective layer 31 from peeling off during a planarization process such as CMP, and can suppress degradation of the wavelength conversion layer 22.

[0095] Therefore, by applying the light-emitting device 1 of this embodiment to an image display device, reliability can be improved.

[0096] Furthermore, in the light-emitting device 1 of this embodiment, the improved adhesion between the wavelength converter 20 and the protective layer 31 allows for planarization of the protective layer 31. This allows the dielectric multilayer film 32 to be formed on the flat protective layer 31, thereby improving reflectivity. Consequently, it is possible to provide an image display device (e.g., the head-mounted display 100) with high brightness and excellent image quality.

[0097] Next, Modifications 1 to 8 and application examples of the present disclosure will be described. Components corresponding to those of the light emitting device 1 of the above embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0098] <2. Modifications>

[0099] (2-1. Modification 1)

[0100] Figure 6 This figure schematically illustrates an example of a cross-sectional structure of a light-emitting device according to Modification 1 of the present disclosure (light-emitting device 2). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 2 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0101] In the light-emitting device 1 of the above embodiment, an example is shown in which a blue wavelength conversion layer 22B is provided in the blue pixel Pb, but the present invention is not limited to this. For example, when light in the blue band of 430 nm to 500 nm is to be extracted from the light-emitting region of the light-emitting element 11, a transparent resin layer 22W having light transmissive properties may be formed as the wavelength conversion layer 22. In this case, the dielectric multilayer film 32 may also have an opening 32H formed in the region corresponding to the blue pixel Pb, so that the blue light extracted from the light-emitting region is directly used as blue light.

[0102] Figure 7This diagram schematically illustrates another example (light-emitting device 2A) of the cross-sectional structure of a light-emitting device according to Modification 1 of the present disclosure. Similar to the light-emitting device 1A of the aforementioned embodiment, a microlens layer 33 may be formed on the dielectric multilayer film 32 to control the optical paths of light emitted from a plurality of pixels (e.g., red pixel Pr, green pixel Pg, and blue pixel Pb). In this case, a protective layer 31 may be further formed on the dielectric multilayer film 32 to fill the opening 32H.

[0103] Thus, in this variation, a light-transmitting, transparent resin layer 22W is formed in the blue pixel Pb as the wavelength conversion layer 22. Furthermore, the dielectric multilayer film 32 has openings 32H formed in the region corresponding to the blue pixel Pb, allowing the blue-band light extracted from the light-emitting region to be directly used as blue light. In such light-emitting devices 2 and 2A, the same effects as those of the aforementioned embodiment can be achieved.

[0104] (2-2. Modification 2)

[0105] Figure 8 This figure schematically illustrates an example cross-sectional structure of a light-emitting device according to Modification 2 of the present disclosure (light-emitting device 3). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 3 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0106] On the surface 20S1 of the wavelength conversion portion 20, as shown in FIG. Figure 8 As shown, the light shielding film 34 may be formed to have an opening 34H for each pixel (for example, a red pixel Pr, a green pixel Pg, and a blue pixel Pb).

[0107] The light-shielding film 34 is used to control the emission direction of light extracted from the wavelength conversion layer 22. For example, the light-shielding film 34 is formed across the display area 100A. As described above, for each pixel (e.g., the red pixel Pr, the green pixel Pg, and the blue pixel Pb), the light-shielding film 34 has an opening 34H that is smaller than the opening 21H of the partition wall layer 21 forming the respective color wavelength conversion layers 22R, 22G, and 22B. Each opening 34H is, for example, positioned on the optical axis of each light-emitting element 11. The shape of each opening 24H can be any of circular, elliptical, and polygonal.

[0108] The light-shielding film 34 is formed using a material with light-shielding properties. Specifically, the light-shielding film 34 can be formed using a metal material with high reflectivity in the visible light region, such as silver (Ag), aluminum (Al), copper (Cu), gold (Au), platinum (Pt), titanium (Ti), or alloys thereof. Alternatively, the light-shielding film 34 can be formed using a metal material, an inorganic material, or a resin material with a reflectivity lower than that of aluminum (Al), with a light-reflecting film having a high reflectivity, such as aluminum (Al), formed on its surface. In this modified example, light that passes through the wavelength conversion layer 22 and is blocked by the light-shielding film 34 is reflected or diffused, then reflected from the side surfaces of the opening 21H in the partition wall layer 21 and emitted from the opening 34H. While the light emitted from the surface 22S1 of the wavelength conversion layer 22 may include some light that has not undergone wavelength conversion, as described above, by extending the optical path length within the wavelength conversion layer 22, the color conversion efficiency within the wavelength conversion layer 22 is improved.

[0109] Alternatively, the light shielding film 34 may be formed using a resin material containing black ink.

[0110] Figure 9 This figure schematically illustrates another example (light-emitting device 3A) of the cross-sectional structure of a light-emitting device according to Modification 2 of the present disclosure. In the blue pixel Pb, as in the light-emitting devices 2 and 2A of Modification 1 described above, a light-transmitting transparent resin layer 22W is formed as the wavelength conversion layer 22. Furthermore, the dielectric multilayer film 32 may have openings 32H formed in the region corresponding to the blue pixel Pb, allowing light in the blue band extracted from the light-emitting region to be directly used as blue light.

[0111] The light emitting device 3 of this modification can be manufactured as follows, for example. Figure 10A 、 Figure 10B An example of a manufacturing process of the light emitting device 3 is shown.

[0112] First, similarly to the above embodiment, the wavelength conversion layers 22R, 22G, and 22B formed on the partition wall layer 21 are removed by, for example, CMP to expose the partition wall layer 21, and the wavelength conversion layers 22R, 22G, and 22B and the partition wall layer 21 are ground to form a flat surface 20S1 ( Figure 5E ).

[0113] Then, if Figure 10A As shown, after forming a metal film made of, for example, Al by sputtering, the metal film is patterned using, for example, photolithography and etching to form the light shielding film 34 having the opening 34H at a predetermined position.

[0114] Next, if Figure 10BAs shown in FIG. 2 , a protective layer 31 made of, for example, SiO is formed on the surface 20S1 by, for example, CVD. Then, similarly to the above embodiment, a dielectric multilayer film 32 and a microlens layer 33 are sequentially formed on the protective layer 31. Thus, the Figure 8 The light emitting device 3 shown (or Figure 9 The light emitting device 3A shown).

[0115] Thus, in this modified example, a light-shielding film 34 having openings 34H smaller than the openings 21H of the partition wall layer 21 forming the respective color wavelength conversion layers 22R, 22G, and 22B is formed on the surface 20S1 of the wavelength converter 20. This provides, in addition to the effects of the aforementioned embodiment, further control over the emission direction of light from the wavelength conversion layer 22, thereby achieving increased brightness in the emission direction.

[0116] Furthermore, in this modification, the light shielding film 34 is formed of a light-reflective material, thereby improving the color conversion efficiency in the wavelength conversion layer 22. Therefore, an image display device with high color purity can be provided.

[0117] (2-3. Modification 3)

[0118] Figure 11 This figure schematically illustrates an example cross-sectional structure of a light-emitting device according to Modification 3 of the present disclosure (light-emitting device 4). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 4 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0119] Surface 20S1 of the wavelength conversion section 20 may also have a concave-convex structure. The concave-convex structure of surface 20S1 is composed of surface 21S1 of the partition wall layer 21 and surface 22H of the wavelength conversion layer 22 protruding from surface 21S1. That is, the partition wall layer 21 forms a concave portion, and the wavelength conversion layer 22 forms a convex portion. In addition, the light-emitting device 4 of this variation has a light-shielding film 34 on the surface 20S1 side of the wavelength conversion section 20, similar to the above-mentioned variation 2. A protective layer 31 is formed between the wavelength conversion layer 22 and the light-shielding film 34 extending above the wavelength conversion layer 22.

[0120] Figure 12 This diagram schematically illustrates another example (light-emitting device 4A) of the cross-sectional structure of a light-emitting device according to Modification 3 of the present disclosure. In the blue pixel Pb, as in the light-emitting devices 2 and 2A of Modification 1 described above, a light-transmitting transparent resin layer 22W is formed as the wavelength conversion layer 22. Furthermore, the dielectric multilayer film 32 may have openings 32H formed in the region corresponding to the blue pixel Pb, allowing light in the blue band extracted from the light-emitting region to be directly used as blue light.

[0121] The light emitting device 4 of this modification can be manufactured as follows, for example. Figures 13A to 13D An example of a manufacturing process of the light emitting device 4 is shown.

[0122] First, similarly to the above embodiment, the wavelength conversion layers 22R, 22G, and 22B of each color are formed in the opening 21H of the partition wall layer 21 using, for example, photolithography and a coating method such as an inkjet method. Figure 5D ).

[0123] Then, if Figure 13A As shown, for example, a protective layer 31 made of SiO is formed on the surface 20S1 by a CVD method.

[0124] Next, if Figure 13B As shown, for example, the protective layer 31 and the wavelength conversion layers 22R, 22G, and 22B of each color on the partition wall layer 21 are removed by photolithography and etching to expose the surface 21S1 of the partition wall layer 21 .

[0125] Then, if Figure 13C As shown, for example, after a metal film, for example, made of Al, is formed on the partition wall layer 21 and on the sides of each color wavelength conversion layer 22R, 22G, 22B and the protective layer 31 and on the upper surface of the protective layer 31 by sputtering, the metal film is patterned, for example, using photolithography technology and etching to form a shading film 34 having an opening 34H at a predetermined position.

[0126] Next, if Figure 13D As shown in FIG. 2 , a protective layer 31 made of, for example, SiO is further formed on the surface 20S1 by, for example, a CVD method. Then, similarly to the above embodiment, a dielectric multilayer film 32 and a microlens layer 33 are sequentially formed on the protective layer 31. Thus, the Figure 11 The light emitting device 4 shown (or Figure 12 The light emitting device 4A shown).

[0127] Thus, in this modification, a concavo-convex structure composed of concave portions formed by the partition wall layer 21 and convex portions formed by the wavelength conversion layer 22 is formed on the surface 20S1 of the wavelength conversion portion 20. In such light-emitting devices 4 and 4A, the same effects as those of the above-described embodiment can also be obtained.

[0128] Furthermore, in this modification, since the light-shielding film 34 is formed on the wavelength conversion layer 22 forming the convex portion via the protective layer 31, degradation of the wavelength conversion layer 22 can be reduced compared to the light-emitting devices 3 and 3A of the above-described modification 2. Consequently, reliability can be further improved.

[0129] It should be noted that in this modification, the wavelength conversion layer 22 is shown as protruding from the partition wall layer 21, but this is not limiting. The partition wall layer 21 and the wavelength conversion layer 22 may form a flat surface, or the partition wall layer 21 may form a convex portion and the wavelength conversion layer 22 may form a concave portion.

[0130] (2-4. Modification 4)

[0131] Figure 14 This figure schematically illustrates an example cross-sectional structure of a light-emitting device according to Modification 4 of the present disclosure (light-emitting device 5). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 5 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0132] The protective layer 31 protecting the surface of the wavelength converter 20 may also be a laminated film of multiple layers made of different materials. The light-emitting device 5 of this modification is a light-emitting device in which protective layers 31A and 31B made of different materials are sequentially laminated on the surface 20S1 of the wavelength converter 20.

[0133] The protective layer 31A can be formed using, for example, aluminum oxide (AlO), and the protective layer 31B can be formed using, for example, silicon oxide (SiO).

[0134] Thus, in this variation, protective layers 31A and 31B composed of different materials are sequentially formed on surface 20S1 of wavelength conversion section 20. AlO films have higher functionality as protective layers than SiO films. However, AlO films are generally formed using atomic layer deposition (ALD), but ALD has a slower film formation rate than CVD. In this variation, by forming a stacked film of protective layer 31A composed of an AlO film formed using ALD and protective layer 31B composed of, for example, an SiO film formed using CVD, the functionality of protective layer 31 can be enhanced while ensuring a sufficient film thickness.

[0135] (2-5. Modification 5)

[0136] Figure 15 This is a diagram schematically showing an example of a cross-sectional structure of a light-emitting device according to Modification 5 of the present disclosure (light-emitting device 6A). Figure 16 This is a diagram schematically showing another example (light-emitting device 6B) of the cross-sectional structure of the light-emitting device according to Modification 5 of the present disclosure. Figure 17This figure schematically illustrates another example of a cross-sectional structure of a light-emitting device according to Modification 5 of the present disclosure (light-emitting device 6C). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting devices 6A, 6B, and 6C can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0137] like Figure 15 As shown, a light-reflecting film 23 can be formed on the surface 21S1 of the side surface of the opening 21H of the partition wall layer 21. The light-reflecting film 23 is used to efficiently extract the various colors of light emitted from the light-emitting element 11 and converted in the respective wavelength conversion layers 22R, 22G, and 22B from the light extraction surface (surface 22S1) of the wavelength conversion layer 22. Furthermore, the light-reflecting film 23 is used to prevent light from leaking into adjacent pixels. The light-reflecting film 23 is formed using a light-reflective metal material. For example, the light-reflecting film 23 can be formed using a metal material having high reflectivity in the visible light region, such as silver (Ag), aluminum (Al), copper (Cu), gold (Au), platinum (Pt), titanium (Ti), or alloys thereof.

[0138] like Figure 16 As shown, a low-refractive-index film 24 can be formed on the surface 21S1 that includes the side surface of the opening 21H of the partition wall layer 21. Similar to the light-reflecting film 23, the low-refractive-index film 24 is used to efficiently extract the respective colors of light converted in the respective wavelength conversion layers 22R, 22G, and 22B from the light extraction surface (surface 22S1) of the wavelength conversion layer 22. Furthermore, the low-refractive-index film 24 is used to prevent light from leaking into adjacent pixels. The low-refractive-index film 24 can be formed using, for example, a fluororesin, magnesium fluoride (MgF), or calcium fluoride (CaF).

[0139] like Figure 17 As shown, a high absorption film 25 may be formed on the surface 21S1 including the side surface of the opening 21H of the partition wall layer 21. The high absorption film 25 is used to prevent light from leaking into adjacent pixels. The high absorption film 25 can be formed using, for example, resin or a black substance such as carbon black.

[0140] When the light reflecting film 23 , the low refractive index film 24 , and the high absorption film 25 are formed on the surface 21S1 including the side surface of the opening 21H of the partition wall layer 21 , the partition wall layer 21 may not have light shielding properties or light reflective properties.

[0141] Thus, in this variation, the light-reflecting film 23 (light-emitting device 6A), the low-refractive-index film 24 (light-emitting device 6B), or the high-absorption film 25 (light-emitting device 6C) is formed on the surface 21S1 including the side surface of the opening 21H of the partition wall layer 21. This provides, in addition to the effects of the above-described embodiment, greater freedom in selecting the material for forming the partition wall layer 21.

[0142] (2-6. Modification 6)

[0143] Figure 18 This figure schematically illustrates an example of a cross-sectional structure of a light-emitting device according to Modification 6 of the present disclosure (light-emitting device 7). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 7 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0144] On the surface 21S1 of the partition wall layer 21, a difficult-to-remove film 26 with a slow processing speed may also be formed. Figure 5E As shown, "processing" refers to the process of polishing and planarizing the wavelength conversion layers 22R, 22G, and 22B, as well as the partition wall layer 21. The difficult-to-remove film 26 can be formed using, for example, copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), silver (Ag), gold (Au), or nickel (Ni).

[0145] In this modified example, since the difficult-to-remove film 26 is formed on the surface 21S1 of the partition wall layer 21, it is possible to maintain a selectivity ratio between the processing speeds of the partition wall layer 21 and the wavelength conversion layer 22. This allows, for example, the thickness of the wavelength conversion layer 22 to be adjusted based on the thickness of the partition wall layer 21. In other words, the thickness of the wavelength conversion layer 22 can be easily controlled.

[0146] (2-7. Modification 7)

[0147] Figure 19 This figure schematically illustrates an example of a cross-sectional structure of a light-emitting device according to Modification 7 of the present disclosure (light-emitting device 8). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 8 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0148] like Figure 19 As shown, a color filter 35 may be formed on the protective layer 31 instead of the microlens layer 33. Specifically, color filters 35R, 35G, and 35B corresponding to the respective RGB color pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) are formed.

[0149] It should be noted that, as in this modification, when color filters 35R, 35G, and 35B corresponding to the respective color pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) are formed on the protective layer 31, Figure 20 As in the illustrated light-emitting device 8A, a transparent resin layer 22W having light transmissive properties may be formed as the wavelength conversion layer 22 provided on each color pixel (red pixel Pr, green pixel Pg, and blue pixel Pb).

[0150] Thus, in this variation, color filters 35R, 35G, and 35B corresponding to the respective color pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) are formed on the protective layer 31. This provides, in addition to the effects of the aforementioned embodiment, an image display device with high color purity.

[0151] (2-8. Modification 8)

[0152] Figure 21 This figure schematically illustrates an example cross-sectional structure of a light-emitting device according to Modification 8 of the present disclosure (light-emitting device 9). Similar to light-emitting device 1 according to the aforementioned embodiment, light-emitting device 9 can be suitably applied to, for example, an image display device known as a so-called head-mounted display (head-mounted display 100).

[0153] like Figure 21 As shown, a nanophotonics layer 36 may be formed on the protective layer 31 instead of the microlens layer 33. This improves the extraction efficiency and directivity of light emitted from the surface 20S1 of the wavelength converter 20. Therefore, in addition to the effects of the above-mentioned embodiment, higher brightness in the emission direction can be achieved.

[0154] (Other variations)

[0155] In the above embodiments and other examples, a light-emitting device (e.g., light-emitting device 1) is shown having RGB color pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) as a plurality of pixels, and emitting light of three colors: red, green, and blue. However, the present invention is not limited to this. The light-emitting device 1 may also be configured to emit a single color of light, such as red light. Alternatively, the light-emitting device 1 may be configured to emit light of two colors, such as red and green light. In this case, a wavelength conversion layer 22 corresponding to each color (e.g., a red wavelength conversion layer 22R, a green wavelength conversion layer 22G, a blue wavelength conversion layer 22B, or a resin layer 22W) is formed in the opening 21H of the partition wall layer 21.

[0156] In addition, while the above embodiments and other examples illustrate examples in which the partition wall layer 21 includes a substantially hexagonal opening 21H corresponding to each color pixel Pr, Pg, and Pb, the top-view shape of the opening 21H is not limited to this. For example, a rectangular opening 21H may also be provided. In this case, the multiple light-emitting elements 11 and the opening 21H may be arranged in a two-dimensional matrix, for example. Furthermore, the size of the opening 21H does not necessarily have to be uniform. For example, the size of the opening 21H (wavelength conversion layer 22 (22R, 22G, 22B)) may vary for each color pixel Pr, Pg, and Pb.

[0157] <3. Application Examples>

[0158] (Application Example 1)

[0159] Figure 22 This is a perspective diagram showing an example of the appearance of an image display device (head-mounted display 100) that uses the light-emitting device of the present disclosure (e.g., light-emitting device 1). Head-mounted display 100 includes, for example, a spectacled display portion 121 and ear hooks 122 on either side of the spectacled display portion 121 for wearing on the user's head. The light-emitting device of the present disclosure (e.g., light-emitting device 1) can be used in display portion 121.

[0160] (Application Example 2)

[0161] Figure 23 This is a perspective diagram showing another example of the appearance of an image display device (head-mounted display 200) that uses the light-emitting device of the present disclosure (e.g., light-emitting device 1). Head-mounted display 200 is a so-called see-through head-mounted display and includes a main body 221, an arm 222, and a lens barrel 223. Head-mounted display 200 is mounted on, for example, a pair of glasses 224. The main body 221 includes a control board for controlling the operation of the head-mounted display 200 and a display unit. The display unit emits image light to display an image and can use the light-emitting device of the present disclosure (e.g., light-emitting device 1). The arm 222 connects the main body 221 and the lens barrel 223 and supports the lens barrel 223. The lens barrel 223 projects image light, supplied from the main body 221 via the arm 222, toward the user's eyes through lenses 225 of the glasses 224.

[0162] While the present technology has been described above using the embodiments, Modifications 1 to 8, and application examples, the present technology is not limited to the aforementioned embodiments and is capable of various modifications. For example, while the aforementioned embodiments illustrate examples in which the light emitted from the light-emitting element 11 is blue light or ultraviolet light, the present invention is not limited to these examples. For example, the light-emitting device 1 may also use light-emitting elements that emit two or more types of light, such as blue and green light, or ultraviolet and green light.

[0163] Furthermore, in the above-described embodiment, each component constituting the light emitting device 1 and the like is specifically listed and described, but not all components need to be included, and other components may be further included.

[0164] Furthermore, the above-mentioned modifications 1 to 8 can be combined with each other.

[0165] It should be noted that the effects described in this specification are merely examples, and the present invention is not limited to the description, and other effects may also be present.

[0166] This technology can also adopt the following configuration. According to this technology, by directly stacking the inorganic layer formed between adjacent light-emitting elements and the covering portion comprising an inorganic material that protects the light-control portion, the light-control portion and the covering portion are directly stacked on the light-emitting surface side of the light-control portion. This improves the adhesion between the light-control portion and the covering portion. This prevents degradation of the light-control portion and peeling of the covering portion, thereby improving reliability.

[0167] (1) A light-emitting device comprising:

[0168] a light-emitting portion, wherein the light-emitting portion has a plurality of light-emitting elements arranged in an array;

[0169] a light control unit, the light control unit comprising an inorganic layer provided on a light emitting surface side of the plurality of light emitting elements and having a first opening above each of the plurality of light emitting elements, and an organic layer provided within the first opening, the light control unit controlling at least one of a wavelength, scattering, and emission direction of light emitted from the plurality of light emitting elements; and

[0170] The covering portion is provided on a surface of the light control portion opposite to the light emitting portion to protect the light control portion and includes an inorganic material. The covering portion is in contact with the inorganic layer.

[0171] (2) In the light emitting device according to (1), a surface of the cover portion opposite to the light emitting portion is formed as a flat surface.

[0172] (3) The light-emitting device according to (1) or (2), wherein the cover has a concavo-convex structure on a surface opposite to the light-emitting portion, the inorganic layer forms concave portions of the concavo-convex structure, and the organic layer forms convex portions of the concavo-convex structure.

[0173] (4) The light-emitting device according to any one of (1) to (3), further comprising a light-shielding film provided on a surface of the cover portion opposite to the light-emitting portion, the light-shielding film having a second opening smaller than the first opening above each of the plurality of light-emitting elements.

[0174] (5) In the light-emitting device according to (4), the light-shielding film has light reflectivity.

[0175] (6) In the light-emitting device according to any one of (1) to (5), the cover is a multilayer film composed of multiple layers of different materials.

[0176] (7) The light emitting device according to any one of (1) to (6), further comprising a dielectric multilayer film formed by laminating two or more dielectric films having mutually different refractive indices on a surface of the cover portion opposite to the light emitting portion.

[0177] (8) The light emitting device according to any one of (1) to (7), further comprising a light path control portion for controlling a light path of the light on a surface of the cover portion opposite to the light emitting portion.

[0178] (9) The light-emitting device according to any one of (1) to (8), further comprising a color filter on a surface of the cover portion opposite to the light-emitting portion.

[0179] (10) In the light-emitting device according to any one of (1) to (9), the inorganic layer and the cover portion each contain silicon and at least one of nitrogen, oxygen, and carbon.

[0180] (11) The light-emitting device according to any one of (1) to (10), wherein the inorganic layer has a light-shielding property.

[0181] (12) The light-emitting device according to any one of (1) to (11), wherein the inorganic layer includes a light-reflecting film on a side surface of the first opening.

[0182] (13) In the light-emitting device according to (12), the light-reflecting film is formed using a metal material.

[0183] (14) In the light-emitting device according to any one of (1) to (13), the inorganic layer includes a low-refractive-index film having a lower refractive index than that of the cover portion on a side surface of the first opening.

[0184] (15) In the light-emitting device according to any one of (1) to (13), the inorganic layer includes a high-absorption film having a higher light absorptivity than the cover portion on a side surface of the first opening.

[0185] (16) The light-emitting device according to any one of (1) to (13), wherein the inorganic layer has a difficult-to-remove film on a surface in contact with the covering portion, the film being processed at a slower speed than the covering portion.

[0186] (17) The light emitting device according to any one of (1) to (16), wherein each of the light emitting devices has

[0187] A first light emitting element and a second light emitting element emitting first light serve as the light emitting elements,

[0188] A first organic layer disposed above the first light-emitting element and a second organic layer disposed above the second light-emitting element serve as the organic layer.

[0189] The first organic layer converts the first light into second light having a wavelength different from that of the first light.

[0190] The second organic layer converts the first light into third light having a wavelength different from the first light and the second light.

[0191] (18) The light-emitting device according to any one of (1) to (17) has

[0192] A first light emitting element, a second light emitting element, and a third light emitting element that emit the first light serve as the light emitting elements,

[0193] The organic layers include a first organic layer disposed above the first light-emitting element, a second organic layer disposed above the second light-emitting element, and a third organic layer disposed above the third light-emitting element.

[0194] The first organic layer converts the first light into second light having a wavelength different from that of the first light.

[0195] The second organic layer converts the first light into a third light having a wavelength different from the first light and the second light.

[0196] The third organic layer transmits the first light without converting the wavelength of the first light, or converts the first light into fourth light having a wavelength different from that of the first light, the second light, and the third light.

[0197] (19) The light emitting device according to (18),

[0198] The cover portion further comprises a dielectric multilayer film formed by laminating two or more dielectric films having mutually different refractive indices on a surface opposite to the light emitting portion.

[0199] The dielectric multilayer film has a third opening above the third organic layer that transmits the first light without converting its wavelength.

[0200] (20) An image display device,

[0201] having a light-emitting device,

[0202] The light emitting device comprises:

[0203] a light-emitting portion, wherein the light-emitting portion has a plurality of light-emitting elements arranged in an array;

[0204] a light control unit, the light control unit comprising an inorganic layer provided on a light emitting surface side of the plurality of light emitting elements and having a first opening above each of the plurality of light emitting elements, and an organic layer provided within the first opening, the light control unit controlling at least one of a wavelength, scattering, and emission direction of light emitted from the plurality of light emitting elements; and

[0205] The covering portion is provided on a surface of the light control portion opposite to the light emitting portion to protect the light control portion and includes an inorganic material. The covering portion is in contact with the inorganic layer.

[0206] This application claims priority based on Japanese Patent Application No. 2023-048660 filed with the Japan Patent Office on March 24, 2023, the entire contents of which are incorporated herein by reference.

[0207] Anyone skilled in the art can conceive of various modifications, combinations, sub-combinations and changes based on design requirements and other factors, but it is understood that these are all included in the scope of the appended claims and their equivalents.

Claims

1. A light-emitting device comprising: a light-emitting portion, wherein the light-emitting portion has a plurality of light-emitting elements arranged in an array; a light control unit, the light control unit comprising an inorganic layer provided on a light emitting surface side of the plurality of light emitting elements and having a first opening above each of the plurality of light emitting elements, and an organic layer provided within the first opening, the light control unit controlling at least one of a wavelength, scattering, and emission direction of light emitted from the plurality of light emitting elements; as well as The covering portion is provided on a surface of the light control portion opposite to the light emitting portion to protect the light control portion and includes an inorganic material. The covering portion is in contact with the inorganic layer.

2. The light emitting device according to claim 1, wherein A surface of the cover portion opposite to the light emitting portion is formed as a flat surface.

3. The light emitting device according to claim 1, wherein The cover portion has a concavo-convex structure on a surface opposite to the light-emitting portion. The inorganic layer forms concave portions of the concavo-convex structure, and the organic layer forms convex portions of the concavo-convex structure. The light emitting device according to claim 1 , wherein: A light-shielding film is further provided on a surface of the cover portion opposite to the light-emitting portion, the light-shielding film having a second opening smaller than the first opening above each of the plurality of light-emitting elements.

5. The light emitting device according to claim 4, wherein The light-shielding film has light reflectivity. The light emitting device according to claim 1 , wherein: The covering portion is a multi-layer laminated film composed of multiple layers of different materials.

7. The light emitting device according to claim 1, wherein The cover portion further includes a dielectric multilayer film formed by laminating two or more dielectric films having mutually different refractive indices on a surface opposite to the light emitting portion.

8. The light emitting device according to claim 1, wherein The cover portion further includes a light path control portion on a surface opposite to the light emitting portion for controlling the light path.

9. The light emitting device according to claim 1, wherein The cover portion further includes a color filter on a surface opposite to the light emitting portion.

10. The light emitting device according to claim 1, wherein The inorganic layer and the cover portion each contain silicon and at least one of nitrogen, oxygen, and carbon.

11. The light emitting device according to claim 1, wherein The inorganic layer has light-shielding properties.

12. The light emitting device according to claim 1, wherein The inorganic layer has a light reflecting film on a side surface of the first opening.

13. The light emitting device according to claim 12, wherein: The light reflecting film is formed using a metal material.

14. The light emitting device according to claim 1, wherein The inorganic layer includes a low-refractive-index film having a lower refractive index than that of the cover portion on a side surface of the first opening.

15. The light emitting device according to claim 1, wherein The inorganic layer includes a high absorption film having a higher light absorption rate than the cover portion on a side surface of the first opening.

16. The light emitting device according to claim 1, wherein The inorganic layer has a difficult-to-remove film on a surface in contact with the covering portion, the surface of the inorganic layer having a processing speed lower than that of the covering portion.

17. The light emitting device according to claim 1, wherein Have A first light-emitting element emitting first light and a second light-emitting element serving as the light-emitting element; and A first organic layer disposed above the first light-emitting element and a second organic layer disposed above the second light-emitting element serve as the organic layer. The first organic layer converts the first light into second light having a wavelength different from that of the first light. The second organic layer converts the first light into third light having a wavelength different from the first light and the second light.

18. The light emitting device according to claim 1, wherein Have A first light-emitting element, a second light-emitting element, and a third light-emitting element that emit first light serve as the light-emitting elements; and The organic layers include a first organic layer disposed above the first light-emitting element, a second organic layer disposed above the second light-emitting element, and a third organic layer disposed above the third light-emitting element. The first organic layer converts the first light into second light having a wavelength different from that of the first light. The second organic layer converts the first light into a third light having a wavelength different from the first light and the second light. The third organic layer transmits the first light without converting the wavelength of the first light, or converts the first light into fourth light having a wavelength different from that of the first light, the second light, and the third light.

19. The light emitting device according to claim 18, wherein The cover portion further comprises a dielectric multilayer film formed by laminating two or more dielectric films having mutually different refractive indices on a surface opposite to the light emitting portion. The dielectric multilayer film has a third opening above the third organic layer that transmits the first light without converting its wavelength.

20. An image display device, having a light-emitting device, The light emitting device comprises: a light-emitting portion, wherein the light-emitting portion has a plurality of light-emitting elements arranged in an array; a light control unit, the light control unit comprising an inorganic layer provided on a light emitting surface side of the plurality of light emitting elements and having a first opening above each of the plurality of light emitting elements, and an organic layer provided within the first opening, the light control unit controlling at least one of a wavelength, scattering, and emission direction of light emitted from the plurality of light emitting elements; as well as The covering portion is provided on a surface of the light control portion opposite to the light emitting portion to protect the light control portion and includes an inorganic material. The covering portion is in contact with the inorganic layer.

Images