Composite cleaning process and system

Abstract

The invention relates to a combined cleaning process and a combined cleaning system. The combined cleaning system is used for carrying out the combined cleaning process. The combined type cleaning system comprises a carrying platform, a laser cleaning device and a gas or liquid cleaning device, the carrying platform is used for carrying at least one object, and the object is provided with at least one object to be cleaned on a to-be-cleaned area of the object. The composite cleaning step of the composite cleaning process comprises a step of carrying out laser reactive cleaning on a to-be-cleaned area of an object by using a laser cleaning device and a step of carrying out gas or liquid reactive cleaning on the to-be-cleaned area of the object by using a gas or liquid cleaning device, therefore, one of the laser reactive cleaning step and the gas or liquid reactive cleaning step is assisted by the other one to improve the cleaning effect on the to-be-cleaned target.

Description

TECHNICAL FIELD

[0001] The present application relates to a cleaning process and system, in particular, to a combined cleaning process and system. BACKGROUND

[0002] There are five major contaminants in semiconductor wafer processing: particles, metallic impurities (e.g. metal ions), organic contaminants, native oxide, and micro-roughness on the wafer surface. The semiconductor wafer processing is quite complicated, and each step included in the front-end-of-line (FEOL) or back-end-of-line (BEOL) processing, such as etching, oxidation, deposition, resist stripping, chemical mechanical polishing, packaging, and dicing, is a source of wafer surface contamination. These contaminants have a significant impact on the processing quality and yield, so the wafer processing must be subjected to repeated cleaning processes. Furthermore, with the development of very large scale integration (VLSI) and ultra large scale integration (ULSI), the wafer cleanliness requirement is becoming more stringent. Currently, the RCA standard cleaning method is commonly used by the industry to clean wafers. The RCA standard cleaning method was developed by RCA Corporation in the 1960s, and has been used for quite a long time. The reason is that there is no new cleaning technology that can effectively replace it (SC-1, also known as APM; SC-2, also known as HPM). For example, the substrate is cleaned using SPM / SC-1 cleaning formulation, SC-2 / SPM / DHF cleaning formulation, and SC-1 cleaning formulation as reactive cleaning components for one or more cleaning steps. For example, the FEOL object is cleaned using SPM / SC-1 cleaning formulation, SC-2 / SPM / DHF cleaning formulation, and SPM cleaning formulation as reactive cleaning components for one or more cleaning steps. For example, the BEOL object is cleaned using EKC, NMP, IPA, ACE solvent or solution as cleaning formulation for one or more cleaning steps, wherein NMP is N-methylpyrrolidon, EKC solution is a mixed solution containing NMP (N-methylpyrrolidon) solvent and amine with alkaline, IPA is isopropyl alcohol, and ACE is acetone. For example, the packaging object is cleaned using EKC, NMP, IPA, ACE solvent or solution as cleaning formulation for one or more cleaning steps. However, the conventional cleaning process consumes a large amount of water and generates a lot of harmful waste emissions.

[0003] Furthermore, nanometerization and "green production" are the common trends in the development of high-tech industries in the present and future, including deep submicron semiconductor, TFT-LCD, III-V communication components, ultra-precision machining, nanometer material manufacturing and nanometer electronic components, etc. All of these technologies are actively developed towards ultra-fine and ultra-clean directions. In the nanometerization process environment, even a small amount of pollutants, such as microparticles, metal impurities, organic matter or polymers, etc. in any link can cause great damage to the process yield. However, such increasingly stringent process cleanliness requirements cannot be provided by the traditional RCA cleaning technology of electronic processes, and the aforementioned processes with high water resource consumption and high-pollution water discharge will seriously affect the development of high-tech electronic industries.

[0004] Currently, there are technologies that use ozone for cleaning. However, due to the low solubility of ozone in aqueous solution and the fact that ozone is quite sensitive to environmental factors, it is very easy to be affected by the concentration of gas-phase ozone, solution temperature and pH, etc., resulting in unstable cleaning efficiency. In addition, the current technology simply tries to change the physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range of the cleaning system, to increase the ozone water concentration and reaction rate. However, the improvement is limited, causing the ozone water technology to be unable to be widely applied in the process so far.

[0005] By controlling the physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range control of the cleaning system, the ozone water concentration and reaction rate are maximized. However, the efficiency in actual application is still not ideal. The reason is that simply changing the physical conditions to approach the thermodynamic ozone saturation concentration has limited improvement in increasing the ozone water concentration, causing the ozone water technology to be unable to be widely applied in the process so far. SUMMARY

[0006] Therefore, one or more objects of the present application are to provide a composite cleaning process and system that can solve the increasingly stringent process cleanliness requirements.

[0007] To achieve the foregoing objects, the present application provides a composite cleaning process, comprising the following steps: providing at least one object having at least one target to be cleaned located on a cleaning area; and using a composite cleaning system to perform a composite cleaning step on the cleaning area of the object, wherein the composite cleaning step comprises performing a laser reactive cleaning step on the cleaning area of the object by a laser cleaning device and performing a gas or liquid reactive cleaning step on the cleaning area of the object by a gas or liquid cleaning device, so that one of the laser reactive cleaning step and the gas or liquid reactive cleaning step is assisted by the other to improve a cleaning effect on the target to be cleaned on the cleaning area.

[0008] The laser reactive cleaning step and the gas or liquid reactive cleaning step are performed simultaneously, sequentially or reversely on the target area of the object.

[0009] The laser reactive cleaning step and the gas or liquid reactive cleaning step are selected from a group consisting of dry cleaning method and wet cleaning method.

[0010] The laser reactive cleaning step and the gas or liquid reactive cleaning step are performed on a part or all of the target area of the object.

[0011] In the combined cleaning step, the laser cleaning device only performs the laser reactive cleaning step on the target area of the object.

[0012] The gas or liquid reactive cleaning step is selected from a group consisting of ozone cleaning method, hydrofluoric acid cleaning method and RCA cleaning agent cleaning method.

[0013] The ozone cleaning method uses ozone water, ozone and / or hydrofluoric acid to clean the target area of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the target area of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the target area of the object.

[0014] The gas or liquid cleaning device of the combined cleaning system further comprises a vibration assembly for vibrating the target area of the object simultaneously when performing the gas or liquid reactive cleaning step on the target area of the object.

[0015] The gas or liquid cleaning device of the combined cleaning system comprises a temperature control and adjustment assembly for controlling and adjusting the temperature when performing the gas or liquid reactive cleaning step on the target area of the object.

[0016] The combined cleaning system comprises a rotating workbench for performing the gas or liquid reactive cleaning step on the target area of the object in a rotating state.

[0017] The combined cleaning step of the combined cleaning system further comprises a polishing step performed before, between or after the laser reactive cleaning step and the gas or liquid reactive cleaning step on the target area of the object.

[0018] wherein the combined cleaning process further comprises providing a plasma to the area to be cleaned of the object by a plasma device before or after the polishing step.

[0019] wherein the combined cleaning process performs the polishing step on the area to be cleaned of the object in an environment containing ozone or ozone water.

[0020] wherein the combined cleaning process further comprises providing a plasma to the area to be cleaned of the object by a plasma device.

[0021] wherein the plasma device is a remote plasma device and the plasma is a remote plasma.

[0022] wherein the laser reactive cleaning process uses a laser beam scanning to provide a pulsed energy to the area to be cleaned of the object.

[0023] wherein the laser reactive cleaning process causes the target to be cleaned on the area to be cleaned of the object to absorb the pulsed energy and to be detached from the area to be cleaned of the object.

[0024] wherein the laser reactive cleaning process causes a liquid to absorb the pulsed energy to generate an explosive pressure wave, thereby generating the cleaning effect on the target to be cleaned on the area to be cleaned of the object with the assistance of the liquid.

[0025] wherein the laser reactive cleaning process provides the pulsed energy focused on a focal point position adjacent to the target to be cleaned, thereby generating the cleaning effect on the target to be cleaned with a plasma shock wave formed at the focal point position.

[0026] wherein the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object by the laser beam during the laser reactive cleaning process.

[0027] wherein the target to be cleaned is selected from the group consisting of organic matter, polymer, metal impurities, particles, micro-rough structure, and native oxide layer.

[0028] wherein the object is a wafer before polishing, a wafer after polishing, a wafer before dicing, or a wafer after dicing.

[0029] wherein the object is a substrate, a finished front-end-of-line (FEOL) object, a finished back-end-of-line (BEOL) object, or a packaging object.

[0030] wherein the object is a semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, gallium nitride, and silicon carbide.

[0031] wherein the object is a low bandgap semiconductor (<1.5 eV) or a high bandgap semiconductor (>3.0 eV).

[0032] To achieve the foregoing, yet another aspect of the present application provides a combined cleaning system for performing a combined cleaning process on a to-be-cleaned region of at least one object, comprising: a carrier for carrying the object, the object having at least one to-be-cleaned target located at the to-be-cleaned region of the object; a laser cleaning device for performing a laser reactive cleaning process on the to-be-cleaned region of the object; and a gas or liquid cleaning device for performing a gas or liquid reactive cleaning process on the to-be-cleaned region of the object, so as to allow one of the laser cleaning device and the gas or liquid cleaning device to improve a cleaning effect on the to-be-cleaned target at the to-be-cleaned region by the other.

[0033] wherein the laser cleaning device and the gas or liquid cleaning device simultaneously, sequentially or reversely perform the laser reactive cleaning process and the gas or liquid reactive cleaning process on the to-be-cleaned region of the object in the combined cleaning process.

[0034] wherein the gas or liquid cleaning device is used to perform a cleaning process selected from a group consisting of an ozone cleaning process, a hydrofluoric acid cleaning process and an RCA cleaning agent cleaning process on the to-be-cleaned region of the object.

[0035] wherein the ozone cleaning process uses ozone water, ozone and / or hydrofluoric acid to clean the to-be-cleaned region of the object, the hydrofluoric acid cleaning process uses hydrofluoric acid to clean the to-be-cleaned region of the object, and the RCA cleaning agent cleaning process uses RCA cleaning agent to clean the to-be-cleaned region of the object.

[0036] wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is placed in the tank to perform the gas or liquid reactive cleaning process.

[0037] wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is placed in the tank to perform the gas or liquid reactive cleaning process.

[0038] wherein the gas or liquid cleaning device of the combined cleaning system further comprises a shaking assembly for simultaneously shaking the to-be-cleaned region of the object when performing the combined cleaning process on the to-be-cleaned region of the object.

[0039] wherein the gas or liquid cleaning device of the combined cleaning system comprises a temperature control and adjustment assembly for controlling and adjusting a temperature of the combined cleaning process when performing the combined cleaning process on the to-be-cleaned region of the object.

[0040] The workpiece is rotated by the rotating worktable, so that the gas or liquid cleaning device performs the gas or liquid reactive cleaning step on the area to be cleaned on the workpiece in the rotating state.

[0041] The gas or liquid cleaning device includes a gas or liquid supply source, and the gas or liquid supply source is selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device, and an RCA cleaning agent supply device.

[0042] The composite cleaning system further includes a polishing step performed on the area to be cleaned on the workpiece before, between, or after the laser cleaning device performs the laser reactive cleaning step and the gas or liquid cleaning device performs the gas or liquid reactive cleaning step.

[0043] The composite cleaning system further includes a plasma device, wherein the plasma device provides a plasma to the area to be cleaned on the workpiece before or after the polishing step.

[0044] The composite cleaning step of the composite cleaning system performs the polishing step on the area to be cleaned on the workpiece in an environment containing ozone or ozone water.

[0045] The composite cleaning step of the composite cleaning system further includes providing a plasma to the area to be cleaned on the workpiece by a plasma device.

[0046] The plasma device is a remote plasma device, and the plasma is a remote plasma.

[0047] The laser cleaning device scans and provides a pulsed energy to the area to be cleaned on the workpiece by generating a laser beam.

[0048] The laser cleaning device causes the target to be cleaned on the area to be cleaned on the workpiece to absorb the pulsed energy and separate from the area to be cleaned on the workpiece in the laser reactive cleaning step.

[0049] The laser cleaning device causes a liquid to absorb the pulsed energy and generate an explosive pressure wave in the laser reactive cleaning step, thereby generating the cleaning effect on the target to be cleaned on the area to be cleaned on the workpiece through the assistance of the liquid.

[0050] The laser cleaning device provides the pulsed energy focused on a focal point position at a distance from the target to be cleaned in the laser reactive cleaning step, thereby generating the cleaning effect on the target to be cleaned on the area to be cleaned through the plasma shock wave formed at the focal point position.

[0051] wherein the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam during the laser reactive cleaning step.

[0052] wherein the laser beam is a pulsed nanosecond laser with a wavelength of 1,064 nm.

[0053] As mentioned above, the composite cleaning process and system of the present application has one or more advantages or technical effects:

[0054] (1) By performing the laser reactive cleaning step and the gas or liquid reactive cleaning step to replace the conventional RCA cleaning method for cleaning the object, the increasingly stringent process cleanliness requirements can be met.

[0055] (2) The use of pulsed energy in combination with the gas or liquid reactive cleaning step can significantly reduce the process steps, reduce water consumption, reduce the amount and emissions of chemical products, and shorten the process time to improve productivity.

[0056] (3) The use of pulsed energy in combination with the gas or liquid reactive cleaning step has good cleaning effect on various cleaning targets (such as organic matter, polymer, metal deposit, particle and native oxide layer), and the surface roughness is better than that of the conventional standard cleaning procedure.

[0057] (4) The use of pulsed energy in combination with the gas or liquid reactive cleaning step, and the provision of plasma by the plasma device, can further reduce the roughness of the area to be cleaned, remove small defects (crystal level), high-temperature annealing and micro-growth epitaxy.

[0058] (5) The use of ozone (UV-ozone) or ozone water (DI-ozone) in the gas or liquid reactive cleaning step can combine or replace the harmful chemicals of the conventional cleaning process, reduce water consumption, reduce the amount and emissions of chemical products, and shorten the process time to improve productivity, and the cleaning effect and surface roughness are better than those of the conventional standard cleaning procedure.

[0059] (6) The use of pulsed energy to clean the area to be cleaned can cause the cleaning target thereon to ionize and leave after absorbing the high-energy light of the laser short pulse.

[0060] (7) By using pulsed energy, the reactive cleaning components of the gas or liquid reactive cleaning step can be selected from ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution), or RCA cleaning agent, which can meet the process cleanliness requirements.

[0061] In order to make the skilled understand the technical features and the technical effects of the present application more clearly, the preferred embodiments and detailed descriptions are given as follows. BRIEF DESCRIPTION OF DRAWINGS

[0062] Figure 1 Flowchart of the combined cleaning process of the first embodiment of the present application.

[0063] Figure 2 Systematic diagram of the combined cleaning system of the first embodiment of the present application, in which the laser cleaning device and the gas or liquid cleaning device are independent different devices, Figure 2 (A) shows the step of performing laser reactive cleaning, Figure 2 (B) shows the step of performing gas or liquid reactive cleaning.

[0064] Figure 3 Systematic diagram of the combined cleaning system of the first embodiment of the present application, in which the laser cleaning device and the gas or liquid cleaning device are integrated into the same device.

[0065] Figure 4 Flowchart of the combined cleaning process of the second embodiment of the present application.

[0066] Figure 5 Systematic diagram of the combined cleaning system of the second embodiment of the present application, Figure 5 (A) shows the step of performing polishing, Figure 5 (B) shows the step of performing laser reactive cleaning, Figure 5 (C) shows the step of performing gas or liquid reactive cleaning.

[0067] Figure 6 Flowchart of the combined cleaning process of the third embodiment of the present application, Figure 6 (A) is the first process mode, Figure 6 (B) is the second process mode.

[0068] Figure 7 Systematic diagram of the combined cleaning system of the third embodiment of the present application, Figure 7 (A) shows the step of performing plasma providing, Figure 7 (B) shows the step of performing polishing, Figure 7 (C) shows the step of performing laser reactive cleaning, Figure 7 (D) shows the step of performing gas or liquid reactive cleaning.

[0069] Figure 8 Structure diagram of the laser beam of the laser cleaning device of the present application irradiating the cleaning target at an inclined angle.

[0070] BRIEF DESCRIPTION OF DRAWINGS

[0071] 10: laser cleaning device

[0072] 12: laser beam generator

[0073] 14: lens group

[0074] 16: laser beam

[0075] 19: interface

[0076] 20: gas or liquid cleaning device 22: gas or liquid supply source

[0077] 24: tank

[0078] 25: liquid

[0079] 26: oscillation assembly

[0080] 28: temperature control and adjustment assembly 50: polishing device

[0081] 52: rotating platform

[0082] 54: polishing pad

[0083] 56: polishing slurry supply source

[0084] 57: polishing slurry

[0085] 60: remote plasma device

[0086] 62: plasma source

[0087] 63: remote plasma

[0088] 64: cavity

[0089] 100: object

[0090] 110: area to be cleaned

[0091] 120: target to be cleaned

[0092] 200: stage

[0093] S10, S20, S210, S220, S230, S240: steps

[0094] θ: tilt angle DETAILED DESCRIPTION

[0095] In order to understand the technical features, contents and advantages of the present application and the effects thereof, the present application is described in detail below in the form of embodiments with reference to the drawings, whose purpose is merely to illustrate and assist the description, and not necessarily to be the true proportion and accurate arrangement after the implementation of the present application, so the appended drawings should not be interpreted, limited the scope of the right of the actual implementation of the present application. In addition, in order to facilitate understanding, the same elements in the following embodiments are denoted by the same symbols.

[0096] In addition, the words used in the specification and claims, unless otherwise specifically noted, generally have their ordinary meaning in the field, in the context of the disclosure, and in the context of the special context. Some of the words used to describe the present application will be discussed below or elsewhere in the specification to provide additional guidance to those skilled in the art in describing the present application.

[0097] As used herein, the use of "first", "second", "third", "fourth" and the like does not particularly mean the order or sequence, nor is it used to limit the present application, but merely to distinguish components or operations described by the same technical terms.

[0098] Secondly, as used herein, the words "include", "include", "have", "contain" and the like are all open terms, that is, they mean including but not limited to.

[0099] The composite cleaning process and system of the present application can be used to remove various contaminants in semiconductor device manufacturing, such as particles, metal impurities, organic contaminants, native oxide, and micro-roughness structure on the surface of the device, and can also be used to replace the plasma ashing technology used in the conventional photoresist stripping process. The term "cleaning" used in the present application refers to washing, cleaning, and / or removing the target to be cleaned on the area to be cleaned of the device, and even includes weakening or overcoming the van der Waals force or electrostatic force between the target to be cleaned and other substances (such as the device to which the target to be cleaned is attached or which is composed of the target to be cleaned). The device to be cleaned, such as various substrates, front-end-of-line (FEOL) devices, back end of line (BEOL) devices, or packaging devices, and the structures formed thereon are not limited. The device can be, for example, a crystal ingot, a wafer before polishing, or a polished wafer. For example, the device to which the present application is applied can be a semiconductor, such as a first-type semiconductor, a second-type semiconductor, or a third-type semiconductor, for example, but not limited to, a semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, gallium nitride, and silicon carbide, and can be a low-energy-gap semiconductor (<1.5 eV) or a high-energy-gap semiconductor (>3.0 eV). Therefore, the target to be cleaned to which the present application is applied can be one or more substances or substance layers corresponding to the type of the device to be cleaned and the processing procedures experienced by the device before cleaning, for example, but not limited to, selected from the group consisting of organic matter (such as photoresist residue), polymer (such as photoresist polymer), metal impurity (such as metal ion), particle, micro-roughness structure, and native oxide, and the target to be cleaned is, for example, attached to the device or is part of the structure of the device. It should be noted that although the device and the target to be cleaned are described as above, the scope of the present application is not limited thereto, and any device and target to be cleaned that can achieve the cleaning effect by the composite cleaning process or the composite cleaning system of the present application falls within the scope of the present application.

[0100] Figure 1 Flowchart of the composite cleaning process of the first embodiment of the present application, Figure 2Figure 1 shows a system schematic diagram of a composite cleaning system according to a first embodiment of the present application, in which the laser cleaning device and the gas or liquid cleaning device are two separate different devices, Figure 2 (A) shows a laser reactive cleaning step, Figure 2 (B) shows a gas or liquid reactive cleaning step, Figure 3 Figure 2 shows a system schematic diagram of a composite cleaning system according to a first embodiment of the present application, in which the laser cleaning device and the gas or liquid cleaning device are integrated into the same device. Please refer to Figure 1 , Figure 2 and Figure 3 The composite cleaning process of the present application at least comprises the following steps: a step (S10) of providing an object 100, in which the object 100 has at least one cleaning target 120 located on a cleaning area 110; and a step (S20) of performing a composite cleaning step on the cleaning area 110 of the object 100 by using a composite cleaning system. The composite cleaning step (S20) comprises a laser reactive cleaning step (S210) of performing a laser reactive cleaning step on the cleaning area 110 of the object 100 by using a laser cleaning device 10; and a gas or liquid reactive cleaning step (S220) of performing a gas or liquid reactive cleaning step on the cleaning area 110 of the object 100 by using a gas or liquid cleaning device 20. One feature of the present application is that one of the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) can be assisted by the other to improve the cleaning effect on the cleaning target 120 on the cleaning area 110.

[0101] Please refer to Figure 1 , Figure 2 and Figure 3The present application provides a hybrid cleaning system, which comprises a laser cleaning device 10 for providing pulsed energy (e.g., one or more laser beams 16) and a gas or liquid cleaning device 20 for providing reactive cleaning components (e.g., one or more reactive gases and / or liquids), wherein the hybrid cleaning system optionally comprises a carrier 200 for carrying at least one object 100 to be cleaned, which can be one or more objects 100, wherein the object 100 has at least one target 120 to be cleaned located on a cleaning area 110. The laser cleaning device 10 comprises, for example, a laser beam generator 12 and a lens set 14, wherein the laser beam generator 12 generates one or more laser beams 16 and irradiates the object 100 to be cleaned via the lens set 14, so as to perform a laser reactive cleaning step (S210), wherein the lens set 14 can be optionally omitted or integrated into the laser beam generator 12. The gas or liquid cleaning device 20 comprises, for example, a gas or liquid supply source 22 for supplying the reactive cleaning components (e.g., reactive gases and / or liquids) onto the object 100 to be cleaned, and optionally further comprises a tank 24, which is, for example, a hollow container, so that the above-mentioned one or more objects 100 to be cleaned can be simultaneously placed in the tank 24, and the reactive cleaning components (e.g., liquid 25) are supplied into the tank 24, so as to perform a gas or liquid reactive cleaning step (S220). The gas or liquid supply source 22 of the gas or liquid cleaning device 20 can be optionally selected from conventional commercial products, such as, but not limited to, ozone water generating devices, ozone generating devices, hydrofluoric acid supplying devices, and RCA cleaning agent supplying devices, so as to supply one or more reactive gases and / or liquids. The ozone water generating device is used to supply conventional ozone water for cleaning, the ozone generating device is used to supply conventional ozone gas for cleaning, the hydrofluoric acid supplying device is used to supply conventional gaseous or liquid hydrofluoric acid for cleaning, and the RCA cleaning agent supplying device is used to supply conventional RCA cleaning agent for cleaning, such as, but not limited to, SC-1 cleaning formula and SC-2 cleaning formula, etc.

[0102] The gas or liquid cleaning device 20 can further optionally comprise a shockwave assembly 26, such as an ultrasonic shockwave assembly, to enhance the cleaning effect of the gas or liquid reactive cleaning step (S220) by generating ultrasonic shockwaves. In addition, the gas or liquid cleaning device 20 can further optionally comprise a temperature control and adjustment assembly 28, which can be a conventional commercial temperature controller, to control and adjust the temperature during the gas or liquid reactive cleaning step (S220) of the object 100. For example, the temperature of the gas or liquid reactive cleaning step (S220) can be adjusted in real time according to the temperature required for the reactive cleaning composition provided by the gas or liquid reactive cleaning step (S220) to perform a cleaning reaction with the target 120 to be cleaned. The object 100 to be cleaned can be optionally carried on the carrier 200 and placed in the tank 24 by moving the carrier 200. The laser cleaning device 10 and the gas or liquid cleaning device 20 can be independent of each other (as shown in FIG. 1) or integrated with each other (as shown in FIG. 2), so that the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) described above can be optionally performed in different devices or in the same device. Figure 2 Figure 3

[0103] In the combined cleaning process of the present application, the laser cleaning device 10 and the gas or liquid cleaning device 20 can be, for example, selected from the group consisting of dry cleaning methods and wet cleaning methods. The laser cleaning device 10 of the present application generates one or more laser beams 16 to scan directly or indirectly to provide pulsed energy (e.g., pulsed reactive energy) to the cleaning area 110 of the object 100, so as to perform a laser reactive cleaning step (S210) on the cleaning area 110 of the object 100, wherein the laser reactive cleaning step (S210) is, for example, selected from the group consisting of dry cleaning methods and wet cleaning methods, so as to achieve the effect of dry or wet cleaning of the cleaning area 110.

[0104] ​​In detail, the laser cleaning device 10 generates a laser beam 16 via a laser beam generator 12 to selectively provide fixed or tunable pulsed energy. For example, the laser cleaning device 10 can provide tunable pulsed energy, such as by selectively adjusting a scan speed, a pulse width, a pulse output period, a wavelength, a repetition frequency, an incident angle, a penetration depth, and / or a heat diffusion length of the laser beam 16. Generally, the shorter the wavelength of the laser beam 16, the higher the energy absorbed by the target 120 to be cleaned and the faster the heating rate. In addition, the present application can also provide selective cleaning by the laser beam 16, such as by removing only the target 120 to be cleaned on the area 110 to be cleaned while leaving the rest of the structure or material on the area 110 to be cleaned. The laser beam provided by the laser cleaning device 10 is, for example, but not limited to, a pulsed nanosecond laser. If the pulse width of the laser beam 16 is greater than the nanosecond (ns) level, the material selectivity is weaker although the aggressiveness is stronger. If the pulse width of the laser beam 16 is less than the nanosecond (ns) level, it is cold ablation and has lower material specificity. The pulse width of the laser beam 16 used in the present application is preferably in the nanosecond (ns) level, whereby it has a higher heating and cooling frequency than other levels of pulse width and has better material specificity. For example, the laser beam generator 12 of the laser cleaning device 10 can selectively use a known commercial product, such as, but not limited to, a Nd:YAG pulsed laser source, a Nd:YVO4 pulsed laser source, or a KrF pulsed laser source. For example, the Nd:YAG pulsed laser source has a wavelength of about 1,064 nm, a frequency of about 20 kHz, and a pulse width of about 150 ns, but is not limited thereto. The wavelength generated by the laser beam generator 12 can also be, for example, 266 nm or 532 nm. For example, the laser beam 16 has a moving speed ranging from about 10 mm / sec to about 1,000 mm / sec, the wavelength of the laser beam 16 preferably ranges from about 266 nm to about 1,600 nm, the pulse width is less than about 1,000 ns, the repetition frequency ranges from about 30 Hz to about 10 MHz, the pulse energy (E) ranges from, for example, about 0.1 μJ to about 10,000 μJ, and the spot diameter ranges from, for example, about 0.5 μm to about 100 mm.

[0105] The reactive cleaning composition provided by the gas or liquid cleaning apparatus 20 of the present application can be, for example, a reactive gas and / or liquid, such as ozone gas (UV-Ozone) and / or ozone water (DI-Ozone), and even optionally including hydrofluoric acid, thereby enhancing the cleaning effect, or reducing the amount of or replacing the harmful chemicals used in conventional cleaning processes, or reducing the adverse effects that can be caused to the object. The reactive cleaning composition is, for example, ozone gas (O3) in gaseous form, which is used directly or in combination with other gases (e.g., hydrofluoric acid) or liquids (e.g., hydrofluoric acid solution or RCA cleaning agent) to perform the cleaning step on the cleaning area 110. The ozone can be formed or generated in various ways, including by using a known commercial ozone generator, which generates ozone by passing oxygen through an energy field (e.g., ultraviolet light, plasma or ion field). In addition, the reactive cleaning composition of the present application can also be an aqueous solution containing ozone (commonly known as ozone water, DI-Ozone), which is used directly or in combination with other gases (e.g., hydrofluoric acid) or liquids (e.g., hydrofluoric acid solution or RCA cleaning agent) to perform the cleaning step on the cleaning area 110, wherein the concentration of ozone in the DI water solution is from about 1 ppm to about 300 ppm. For example, the gas or liquid reactive cleaning step (S220) of the present application can be performed, for example, using ozone water with a concentration of about 30 ppm and a flow rate of about 2 lpm (liters per minute) to clean the target object 120 for about 1 hour. In addition, the DI water solution can also contain ozone cleaning aids, such as carbonate and bicarbonate anions, and organic acids, such as formic acid, oxalic acid, acetic acid and glycolic acid, etc. For example, in a conventional process using plasma etching in combination with SPM cleaning solution to remove photoresist, after removing most (about 99%) of the photoresist by plasma, the remaining 1% of photoresist residue is removed by RCA cleaning agent cleaning method. However, the combined cleaning step (S20) of the present application can perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) to replace the RCA cleaning agent cleaning method of the prior art, or to replace part of the cleaning formulation in the RCA cleaning agent cleaning method, for example, the present application can use ozone water (DI-Ozone) to replace H2O2 in the SC-1 cleaning formulation of the RCA cleaning agent cleaning method of the prior art, or for example, dilute hydrofluoric acid (DHF) in combination with ozone water (e.g., room temperature) to replace the SPM cleaning solution (H2SO4 / H2O2 / H2O, i.e., Piranha cleaning solution) which requires high temperature (about 100°C to about 130°C), thereby removing the remaining 1% of photoresist residue. Even, the present application can also replace the above-mentioned plasma etching by, for example, the laser reactive cleaning step (S210), thereby removing most (about 99%) of the photoresist. The volume ratio of hydrofluoric acid to ozone water ranges, for example, from about 1:1 to about 10:1.

[0106] In the first embodiment, the present application, for example, performs the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the to-be-cleaned region 110 of the object 100 simultaneously, sequentially or in reverse order, so as to achieve the effect of assisting in cleaning the to-be-cleaned target 120. As mentioned above, the laser cleaning device 10 and the gas or liquid cleaning device 20 of the present application can be different devices independent of each other or integrated into the same device, so that the present application can selectively perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) in different devices or in the same device.

[0107] In the first embodiment, the present application, for example, performs the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the to-be-cleaned region 110 of the object 100 simultaneously, sequentially or in reverse order, so as to achieve the effect of assisting in cleaning the to-be-cleaned target 120. As mentioned above, the laser cleaning device 10 and the gas or liquid cleaning device 20 of the present application can be different devices independent of each other or integrated into the same device, so that the present application can selectively perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) in different devices or in the same device.

[0108] In the first embodiment, the present application, for example, performs the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the to-be-cleaned region 110 of the object 100 simultaneously, sequentially or in reverse order, so as to achieve the effect of assisting in cleaning the to-be-cleaned target 120. As mentioned above, the laser cleaning device 10 and the gas or liquid cleaning device 20 of the present application can be different devices independent of each other or integrated into the same device, so that the present application can selectively perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) in different devices or in the same device.

[0109] In the third aspect of the first embodiment, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) are performed simultaneously on the target area 110 of the object 100 by the laser cleaning device 10 and the gas or liquid cleaning device 20. Since the laser cleaning device 10 and the gas or liquid cleaning device 20 perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the target area 110 of the object 100 simultaneously, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) can assist each other to improve the cleaning effect on the target 120 of the target area 110.

[0110] In the combined cleaning process of the present application, the object 100 is carried on a carrier 200 of a combined cleaning system. The carrier 200 can be various fixed or movable worktables, and can be various fixed or rotating worktables. The configuration or type of the carrier 200 is not limited, and can be determined according to the type of the object 100 to be cleaned and the configuration or type of the laser cleaning device 10 and the gas or liquid cleaning device 20. For example, the carrier 200 can be selected from the group consisting of horizontal, vertical and inclined worktables, such as a rotating platform used in a conventional commercial polishing process (e.g., mechanical polishing or chemical-mechanical polishing (CMP)). Alternatively, the gas or liquid cleaning device 20 can be a conventional commercial resist stripping machine (e.g., a spray solvent tool (SST)), and the carrier 200 can be a rotating carrier of the SST machine, so that the target area 110 of the object 100 in a rotating state can be cleaned by the gas or liquid reactive cleaning step simultaneously.

[0111] Furthermore, the combined cleaning process of the present invention can selectively perform the aforementioned laser reactive cleaning step (S210) on a portion or all of the area to be cleaned 120 on the object 100's area to be cleaned 110, and selectively perform the gas or liquid reactive cleaning step (S220) on the aforementioned portion or all of the area to be cleaned 110. In other words, in the present invention, while the cleaning areas cleaned by the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) preferably overlap, they are not limited to being identical. As long as both can provide an auxiliary cleaning effect, they fall within the scope of the present invention. For example, in the combined cleaning steps of the present invention, the laser cleaning device 10 may also perform the aforementioned laser reactive cleaning step (S210) only on the target 120 to be cleaned in the area 110 to be cleaned, while the gas or liquid reactive cleaning step (S220) is performed on the area 110 to be cleaned including the target 120 to be cleaned.

[0112] The laser cleaning device 10 of the present invention can perform the laser reactive cleaning step ( S210 ) by, for example, etching cleaning, liquid-assisted laser cleaning, and / or laser shock wave cleaning. Taking the etching cleaning method as an example, during the laser reactive cleaning step (S210) of the combined cleaning process, the object 100 to which the present invention is applicable is not limited to being located in an air environment. Regardless of whether the object 100 to be cleaned is located in a liquid environment or a gas environment, the present invention can directly irradiate (e.g., focus) the laser beam 16 generated by the laser cleaning device 10 onto the target 120 to be cleaned within the object 100, causing the target 120 to directly absorb the pulsed energy of the laser beam 16 (e.g., a short pulse) and become ionized, leaving the region 110 to be cleaned. This can also weaken the bond (Van der Waals bond) between the target 120 and the object 100, or cause defects or instability, thereby improving the overall cleaning effect of the combined cleaning step (S20) on the region 110 to be cleaned. The liquid or gas can be the same as or different from the reactive cleaning component used in the aforementioned gas or liquid reactive cleaning step (S220). In addition, in the etching cleaning method, the laser beam 16 can be selectively irradiated directly on the intersection 19 (shadow interface) (such as the shadow interface) of the target 120 to be cleaned (such as metal impurities or particles) and the object 100. Figure 8As shown in FIG. 1 , due to the different material properties (e.g., thermal expansion coefficient) between the target 120 to be cleaned and the object 100, stress is generated at the junction 19, which helps to separate the target 120 to be cleaned from the object 100. Although the laser beam 16 provided by the present invention can be directly irradiated directly above the target 120 to be cleaned, that is, the irradiation direction of the laser beam 16 is perpendicular to the object 100, it is not limited thereto. For example, Figure 8 As shown, in order to allow the junction 19 between the target 120 to be cleaned and the object 100 to effectively absorb the pulsed energy of the laser beam 16 (e.g., short pulse), the laser beam 16 may selectively irradiate the junction 19 between the target 120 to be cleaned (e.g., metal impurities or particles) and the object 100 at an inclined angle θ, thereby preventing the top of the target 120 from blocking the laser beam 16 from directly irradiating the junction 19. Alternatively, in the etching cleaning method, the laser beam 16 may irradiate the target 120 to be cleaned, for example, from the back (reverse side), that is, the laser beam 16 preferably irradiates and penetrates the object 100 (e.g., a non-optically absorbing substrate) and then irradiates the bottom of the target 120 to be cleaned, such as the junction 19 between the target 120 to be cleaned and the object 100. The irradiation direction of the laser beam 16 may be, for example, different from the extension direction of the target 120 to be cleaned, for example, non-perpendicular to the object 100. In other words, the above-mentioned inclination angle ranges from about 89 degrees to about 179 degrees.

[0113] Take the liquid-assisted laser cleaning method as an example (please also refer to Figure 2 ), if the object 100 to be cleaned is located in a liquid 25, the present invention can, for example, allow the liquid 25 to absorb the pulsed (e.g., short pulse) reactive energy of the laser beam 16, thereby producing a cleaning effect on the target 120 to be cleaned on the area 110 to be cleaned of the object 100 with the assistance of the liquid 25. For example, the laser beam 16 provided by the present invention can be, for example, directly focused to irradiate the liquid 25 (e.g., water or alcohol (e.g., isopropyl alcohol)) adjacent to (or near or around) the target 120 to be cleaned. The explosive pressure wave generated by the explosive evaporation of the liquid 25 due to the increase in temperature (overheating) can reduce or eliminate the bonding force between the target 120 to be cleaned and the object 100, thereby achieving a cleaning effect. Moreover, the present invention can also reduce the generation of thermal stress by heating the liquid 25. The above-mentioned liquid 25 can be the same as or different from the reactive cleaning component used in the above-mentioned gas or liquid reactive cleaning step (S220). Taking the liquid-assisted laser cleaning method to remove gold and tungsten particles (particle size of about μm level) from the surface of a silicon substrate as an example, the laser beam generator 12 can be a KrF pulse laser source, the pulse width of the laser beam 16 is about 30ns, the repetition frequency range is about 100Hz, and the pulse energy is about 0.3J / cm 2, with a wavelength of approximately 248 nm. Taking the liquid-assisted laser cleaning method for removing aluminum oxide particles (Al2O3, with a particle size of approximately 60 nm) from the surface of a silicon substrate as an example, the laser beam generator 12 can be a Nd:YAG pulsed laser source. The pulse width of the laser beam 16 is approximately 7 ns, the repetition frequency range is approximately 8 Hz, and the pulse energy is approximately 0.17 J / cm 2 , with a wavelength of about 532nm.

[0114] Taking laser shock wave cleaning as an example, the present invention can focus the pulsed energy provided by the laser beam 16 at a focal position at a distance (e.g., adjacent to, near, or around) the target 120 to be cleaned. The object 100 can be located in an air environment or a gaseous environment, so that the gas molecules at the focal position are ionized to form a rapidly expanding plasma, thereby generating a plasma shock wave, which can be used to remove the target 120 to be cleaned. The gas in the gaseous environment can be the same as or different from the reactive cleaning component used in the aforementioned gas or liquid reactive cleaning step (S220). In short, the present invention can facilitate the cleaning effect of the composite cleaning step (S20) on the target 120 to be cleaned by performing a laser reactive cleaning step (S210) on the target 120 to be cleaned, either by directly contacting (focusing) the laser beam 16 with the target 120 to be cleaned, or by performing a laser reactive cleaning step (S210) on the target 120 to be cleaned, regardless of whether the laser beam 16 is in a liquid environment or a gaseous environment. For example, in the case of removing silicon dioxide particles (e.g., fused silica particles with a particle size of approximately 5 μm) from the surface of a silicon substrate by etching cleaning or laser shock wave cleaning, a KrF pulse laser source can be used as the laser beam generator 12. The pulse width of the laser beam 16 is approximately 15 ns, the repetition frequency range is approximately 30 Hz, and the pulse energy is approximately 60 mJ / cm 2 , with a wavelength of approximately 248 nm. Taking the etching cleaning method or laser shock wave cleaning method to remove copper particles (particle size of approximately 1 μm) from the surface of a silicon substrate as an example, the laser beam generator 12 can be a Nd:YAG pulse laser source. The pulse width of the laser beam 16 is approximately 10 ns, the repetition frequency range is approximately 10 kHz, and the pulse energy is approximately 0.18 / 0.46 mJ / cm 2 , with a wavelength of approximately 266 / 352 nm. Taking the etching cleaning method or laser shock wave cleaning method to remove the gold layer (thickness of approximately 48 nm) deposited on the surface of the silicon substrate as an example, the laser beam generator 12 can be a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is approximately 100 ns, the repetition frequency range is approximately 2 kHz, and the pulse energy is approximately 10 mJ / cm 2at a wavelength of about 1,064 nm. For example, to remove polystyrene latex nanoparticles (having a diameter of about 300 nm) from the surface of a silicon substrate using an etch clean or a laser shock cleaning process, the laser beam generator 12 can use a pulsed Nd:YAG laser source, and the laser beam 16 can have a pulse width of about 6 ns and a pulse energy of about 100-600 mJ / cm 2 at a wavelength of about 1,064 nm.

[0115] The gas or liquid reactive cleaning step (S220) of the present application provides a reactive cleaning component (e.g., a reactive gas and / or liquid) to perform a cleaning process selected from the group consisting of dry cleaning and wet cleaning, for example, the gas or liquid reactive cleaning step (S220) is a cleaning process selected from the group consisting of ozone cleaning, hydrofluoric acid cleaning, and RCA cleaning for the region 110 to be cleaned of the object 100. For example, the ozone cleaning can be a dry cleaning process using ozone gas (UV-Ozone) and / or a wet cleaning process using ozone water (DI-Ozone), the ozone concentration in the DI water is in the range of about 1 ppm to about 300 ppm, and the cleaning temperature is in the range of about 0°C to about 60°C. The hydrofluoric acid cleaning can be a dry cleaning process using hydrofluoric acid (HF) gas and / or a wet cleaning process using hydrofluoric acid liquid (e.g., diluted hydrofluoric acid liquid), the volume ratio of HF:H2O is in the range of about 1:2 to about 1:10, and the cleaning temperature is in the range of about 20°C to about 25°C. The hydrofluoric acid has the property of dissolving silicon dioxide, so that the oxide layer (e.g., native oxide layer) formed on the surface of the silicon substrate can be removed, and the particles and metal impurities adsorbed on the oxide layer can be removed, and the silicon-hydrogen bond can be formed on the surface of the silicon substrate to make the silicon surface hydrophobic. The RCA cleaning can be a cleaning process using SC-1 and SC-2 cleaning formulations, and even can selectively include a cleaning process using SPM cleaning liquid (e.g., SC-3 cleaning formulation), wherein the SC-1 cleaning formulation is, for example, NH4OH / H2O2 / H2O, the volume ratio is in the range of about 1:1:5 to about 1:2:7, the cleaning time is in the range of about 10 minutes to about 20 minutes, and the cleaning temperature is in the range of about 65°C to about 80°C. The SC-1 cleaning formulation is preferably used for basic oxidation to remove particles on the silicon substrate, and can oxidize and remove a small amount of organic matter (e.g., residual photoresist) and metal contaminants (e.g., Au, Ag, Cu, Ni, Cd, Zn, Ca, Cr, etc.) on the surface. Controlling the cleaning temperature below 80°C helps to reduce the loss caused by the volatilization of ammonia and hydrogen peroxide. The SC-2 cleaning formulation is, for example, HCl / H2O2 / H2O, the volume ratio is in the range of about 1:1:5 to about 1:2:8, the cleaning time is in the range of about 10 minutes to about 20 minutes, and the cleaning temperature is in the range of about 75°C to about 85°C. The SC-3 cleaning formulation is, for example, H2SO4 / H2O2 / H2O, the volume ratio is about 5:1:1, and the cleaning temperature is in the range of about 120°C to about 280°C. The SC-3 cleaning formulation has a very high oxidation ability, which can oxidize the metal and dissolve it in the cleaning liquid, and can oxidize the organic matter to generate CO2 and H2O. The SC-3 cleaning formulation can clean the organic matter contamination and part of the metal impurities on the surface of the silicon substrate, but when the organic matter contamination is particularly serious, the carbonization of the organic matter makes it difficult to remove.

[0116] In the present application, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) are used to replace the conventional RCA cleaning agent cleaning method to clean the target 120. In the present application, the gas or liquid reactive cleaning step (S220) of the combined cleaning process (S20) can be selectively used in any one or more of the following methods: ozone cleaning method, hydrofluoric acid cleaning method, and RCA cleaning agent cleaning method.

[0117] Figure 4 The flowchart of the combined cleaning process of the second embodiment of the present application. Figure 5 The system diagram of the combined cleaning system of the second embodiment of the present application, Figure 5 (A) shows the polishing step, Figure 5 (B) shows the laser reactive cleaning step, Figure 5 (C) shows the gas or liquid reactive cleaning step. As Figure 4 and Figure 5 In the second embodiment of the present application, in addition to the device shown in the first embodiment, the combined cleaning system of the present application further comprises a polishing device 50. The combined cleaning process (S20) of the present application selectively further comprises a polishing step (S230) performed on the target cleaning area 110 of the object 100 by the polishing device 50 (such as a mechanical polishing device or a chemical mechanical polishing device), and then simultaneously, sequentially or reversely, performing the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the target cleaning area 110 of the object 100. For example, when the polishing device 50 is a chemical mechanical polishing device, the structure of the polishing device 50 comprises a rotating platform 52, a polishing pad 54, and a polishing slurry supply source 56. The rotating platform 52 is used to drive the polishing pad 54 to rotate relative to the object 100 on the stage 200, and the polishing slurry supply source 56 is used to supply the polishing slurry 57 between the polishing pad 54 and the object 100, thereby performing the polishing step (S230) on the object 100. However, the present application is not limited thereto, and the polishing step (S230) can be selectively performed on the target cleaning area 110 of the object 100 before, between, or after the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220).

[0118] Figure 6 The flowchart of the combined cleaning process of the third embodiment of the present application, Figure 6 (A) is the first process state, Figure 6 (B) is the second process state. Figure 7 The system diagram of the combined cleaning system of the third embodiment of the present application,Figure 7 (A) shows a providing plasma step, Figure 7 (B) shows a polishing step, Figure 7 (C) shows a laser reactive cleaning step, Figure 7 (D) shows a gas or liquid reactive cleaning step. As Figure 6 and Figure 7 shown, in the third embodiment of the present application, in addition to the apparatus shown in the second embodiment, the composite cleaning system of the present application further comprises a plasma device 60, such as comprising a plasma source 62 and a chamber 64, wherein the chamber 64 is used to place the object 100, and the plasma source 62 is used to provide a plasma 63 to the cleaning area 110 of the object 100 in the composite cleaning step S20. Wherein, the plasma device 60 is, for example, a remote plasma device, and the plasma 63 is, for example, a remote plasma, but not limited thereto. As Figure 6 (A), Figure 7 (B), Figure 7 (C) and Figure 7 (D) shown, before or after the laser reactive cleaning step S210 or the gas or liquid reactive cleaning step (S220) is performed, the plasma device 60 of the present application may, for example, perform a providing plasma step (S240) on the cleaning area 110 of the object 100. In addition, as Figure 6 (B) and Figure 7 (A) to Figure 7(D) as shown, the combined cleaning step (S20) of the present application is optionally further comprised before or after the polishing step (S230), for example, after the polishing step (S230), a plasma providing step (S240) is performed by the plasma device 60 to provide a plasma 63 to the area 110 to be cleaned of the object 100, so that the area 110 to be cleaned of the object 100 has the effects of, for example, roughness reduction, small defect removal (crystal level), high temperature annealing, and micro-growth epitaxy, and simultaneously, sequentially, or reversely, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) are performed on the area 110 to be cleaned of the object 100. In the present application, the order of use (e.g., the direction indicated by the arrow in the figure) and the combination of the laser cleaning device 10, the gas or liquid cleaning device 20, the polishing device 50, and the plasma device 60 can be adjusted according to the actual application, for example, the state of the object to be cleaned (i.e., the process undergone before the combined cleaning process of the present application is performed). For example, the present application can use a known commercial polishing slurry (e.g., adding alumina, silica, spinel, ceria, and zirconia) to perform the polishing step (S230), or the present application can perform the polishing step (S230) on the area 110 to be cleaned of the object 100 in an environment containing ozone or ozone water, for example, by dissolving ozone or ozone water in the above-mentioned known commercial polishing slurry, thereby simultaneously performing the gas or liquid reactive cleaning step (S220) and the polishing step (S230) (e.g., mechanical polishing or chemical mechanical polishing, CMP), wherein the concentration of ozone in the DI water solution is from about 1 ppm to about 300 ppm, depending on the cleaning target 120 to be cleaned. In addition, the DI water solution can also contain ozone cleaning aids, such as carbonate and bicarbonate anions, and organic acids, such as formic acid, oxalic acid, acetic acid, and glycolic acid.

[0119] In the present application, when the different cleaning steps (e.g., laser reactive cleaning step (S210), gas or liquid reactive cleaning step (S220), polishing step (S230), and plasma providing step (S240)) are performed by the composite cleaning system, the same or different carrier 200 can be used to carry the object 100. If the same carrier 200 is used, the carrier 200 and the object 100 carried thereby can be moved from one cleaning device to the next cleaning device by a conveying system (not shown) such as a conveyor belt or a robot arm, so as to perform one cleaning step. If different carriers 200 are used, the object 100 can be moved onto different carriers 200 by the conveying system (not shown), so as to perform one cleaning step. In other words, when the different cleaning steps are performed by the composite cleaning system, if the plurality of cleaning devices are selectively integrated together, the use of the conveying system can be omitted, and the process cost, process time, and production capacity can be reduced.

[0120] In summary, the composite cleaning process and system of the present application has the following advantages:

[0121] (1) By performing the laser reactive cleaning step and the gas or liquid reactive cleaning step instead of the conventional RCA cleaning method using RCA cleaning agent, the increasingly stringent process cleanliness requirement can be met.

[0122] (2) The use of pulsed energy in combination with the gas or liquid reactive cleaning step can significantly reduce the process steps, reduce water consumption, reduce the use and emission of chemical products, and shorten the process time to increase production capacity.

[0123] (3) The use of pulsed energy in combination with the gas or liquid reactive cleaning step has good cleaning effect on various cleaning targets (e.g., organic matter, polymer, metal deposit, particle, and native oxide layer), and the surface roughness is better than that of the conventional standard cleaning procedure.

[0124] (4) The use of pulsed energy in combination with the gas or liquid reactive cleaning step, and the provision of plasma by the plasma device, can further reduce the roughness of the cleaning area, remove small defects (crystal level), perform high-temperature annealing, and promote micro-growth of the epitaxial layer.

[0125] (5) The use of ozone (UV-Ozone) or ozone water (DI-Ozone) in the gas or liquid reactive cleaning step can combine or replace the harmful chemicals in the conventional cleaning process, reduce water consumption, reduce the use and emission of chemical products, shorten the process time to increase production capacity, and the cleaning effect and surface roughness are better than those of the conventional standard cleaning procedure.

[0126] (6) Using pulsed energy to clean the area to be cleaned, so that the target to be cleaned on it can be ionized and removed after absorbing the high-energy light of the laser short pulse.

[0127] (7) By using pulsed energy, the reactive cleaning components of the gas or liquid reactive cleaning step can be selected from ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution), or RCA cleaning agent, which can meet the process cleanliness requirements.

[0128] The above is only exemplary and not limiting. Any equivalent modification or change made without departing from the spirit and scope of the present application shall be included in the appended claims.

Claims

1. A composite cleaning process, characterized by, The method comprises the following steps: providing at least one object having at least one target to be cleaned on a region to be cleaned; and performing a combined cleaning step on the region to be cleaned of the object by using a combined cleaning system, wherein the combined cleaning step comprises performing a laser reactive cleaning step on the region to be cleaned of the object by using a laser cleaning device and performing a gas or liquid reactive cleaning step on the region to be cleaned of the object by using a gas or liquid cleaning device, so that one of the laser reactive cleaning step and the gas or liquid reactive cleaning step is assisted by the other to improve a cleaning effect on the target to be cleaned on the region to be cleaned.

2. The combined cleaning process of claim 1, wherein The laser reactive cleaning step and the gas or liquid reactive cleaning step are performed on the region to be cleaned of the object simultaneously, sequentially or reversely by the combined cleaning step.

3. The combined cleaning process of claim 1, wherein the cleaning process is performed in a single chamber. 3 The laser reactive cleaning step and the gas or liquid reactive cleaning step are selected from a group consisting of dry cleaning method and wet cleaning method.

4. The combined cleaning process of claim 1, wherein, The laser reactive cleaning step is performed on a partial region or a whole region of the target to be cleaned on the region to be cleaned of the object by the combined cleaning step, and the gas or liquid reactive cleaning step is performed on the partial region or the whole region of the region to be cleaned of the object.

5. The combined cleaning process of claim 1, wherein, In the combined cleaning step, the laser cleaning device only performs the laser reactive cleaning step on the target to be cleaned on the region to be cleaned of the object.

6. The combined cleaning process of claim 1, wherein, The gas or liquid reactive cleaning step is a cleaning step selected from a group consisting of ozone cleaning method, hydrofluoric acid cleaning method and RCA cleaning agent cleaning method.

7. The combined cleaning process according to claim 6, wherein the cleaning process is performed in a single chamber. The ozone cleaning method uses ozone water, ozone and / or hydrofluoric acid to clean the region to be cleaned of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the region to be cleaned of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the region to be cleaned of the object.

8. The combined cleaning process of claim 1, wherein, The gas or liquid cleaning device of the combined cleaning system further comprises a shaking component for simultaneously shaking the region to be cleaned of the object when the gas or liquid reactive cleaning step is performed on the region to be cleaned of the object.

9. The combined cleaning process of claim 1, wherein, The gas or liquid cleaning device of the combined cleaning system comprises a temperature control and adjustment component for controlling and adjusting temperature when the gas or liquid reactive cleaning step is performed on the region to be cleaned of the object.

10. The combined cleaning process of claim 1, wherein, The combined cleaning system comprises a rotating workbench for performing the gas or liquid reactive cleaning step on the region to be cleaned of the object in a rotating state.

11. The combined cleaning process of claim 1, wherein, The combined cleaning step of the combined cleaning system further comprises performing a polishing step on the region to be cleaned of the object before, between or after the laser reactive cleaning step and the gas or liquid reactive cleaning step.

12. The combined cleaning process of claim 11, wherein, The combined cleaning step further comprises providing a plasma to the region to be cleaned of the object by using a plasma device before or after the polishing step.

13. The combined cleaning process of claim 11, wherein the cleaning process is performed in a single chamber. 13 The complex cleaning step is performed on the to-be-cleaned region of the object in an environment containing ozone or ozone water.

14. The combined cleaning process of claim 1, wherein, The complex cleaning step further comprises providing a plasma to the to-be-cleaned region of the object by a plasma device.

15. The combined cleaning process according to claim 12 or 14, wherein the cleaning process is a cleaning process for a semiconductor manufacturing process. The plasma device is a remote plasma device, and the plasma is a remote plasma.

16. The combined cleaning process of claim 1, wherein, The laser reactive cleaning step uses a laser beam scanning to provide a pulsed energy to the to-be-cleaned region of the object.

17. The combined cleaning process of claim 16, wherein, The laser reactive cleaning step causes the to-be-cleaned target on the to-be-cleaned region of the object to absorb the pulsed energy and to be detached from the to-be-cleaned region of the object.

18. The combined cleaning process of claim 16, wherein, The laser reactive cleaning step causes a liquid to absorb the pulsed energy and to generate an explosive pressure wave, thereby generating the cleaning effect on the to-be-cleaned target on the to-be-cleaned region of the object with the assistance of the liquid.

19. The combined cleaning process of claim 16, wherein, The laser reactive cleaning step provides the pulsed energy focused on a focal point position adjacent to the to-be-cleaned target, thereby generating the cleaning effect on the to-be-cleaned target with the assistance of a plasma shock wave formed at the focal point position.

20. The combined cleaning process of claim 16, wherein, The laser cleaning device provides adjustable pulsed energy to the to-be-cleaned region of the object via the laser beam in the laser reactive cleaning step.

21. The combined cleaning process of claim 1, wherein, The to-be-cleaned target is selected from the group consisting of organic matter, polymer, metal impurity, particle, micro-rough structure, and native oxide layer.

22. The combined cleaning process of claim 1, wherein, The object is a wafer before cutting, a wafer before polishing, or a wafer after polishing.

23. The combined cleaning process of claim 1, wherein, The object is a substrate, a finished front-end-of-line (FEOL) object, a finished back-end-of-line (BEOL) object, or a packaging object.

24. The combined cleaning process of claim 1, wherein, The object is a semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, gallium nitride, and silicon carbide.

25. The combined cleaning process of claim 1, wherein, The object is a low-energy-gap semiconductor (<1.5 eV) or a high-energy-gap semiconductor (>3.0 eV).

26. A composite cleaning system for performing a composite cleaning step on a to-be-cleaned area of ​​at least one object, characterized in that: The complex cleaning step comprises: a carrier for carrying the object, the object having at least one to-be-cleaned target on a to-be-cleaned region of the object; a laser cleaning device for performing a laser reactive cleaning step on the to-be-cleaned region of the object; and a gas or liquid cleaning device for performing a gas or liquid reactive cleaning step on the to-be-cleaned region of the object, thereby assisting one of the laser cleaning device and the gas or liquid cleaning device to improve a cleaning effect on the to-be-cleaned target on the to-be-cleaned region. The laser cleaning device and the gas or liquid cleaning device perform the laser reactive cleaning step and the gas or liquid reactive cleaning step on the to-be-cleaned region of the object simultaneously, sequentially, or reversely in the complex cleaning step.

27. The combined cleaning system of claim 26, wherein, The gas or liquid cleaning device performs a cleaning step selected from the group consisting of ozone cleaning, hydrofluoric acid cleaning, and RCA cleaning on the to-be-cleaned region of the object.

28. The combined cleaning system of claim 26, wherein, ​ 29. The composite cleaning system according to claim 28, wherein: wherein the ozone cleaning process uses ozone water, ozone and / or hydrofluoric acid to clean the to-be-cleaned region of the object, the hydrofluoric acid cleaning process uses hydrofluoric acid to clean the to-be-cleaned region of the object, and the RCA cleaning agent cleaning process uses RCA cleaning agent to clean the to-be-cleaned region of the object.

30. The combined cleaning system of claim 26, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

31. The composite cleaning system according to claim 28, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

32. The combined cleaning system of claim 26, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

33. The composite cleaning system according to claim 26, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

34. The combined cleaning system of claim 26, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

35. The combined cleaning system of claim 26, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

36. The combined cleaning system of claim 26, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

37. The composite cleaning system according to claim 36, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

38. The combined cleaning system of claim 36, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

39. The composite cleaning system according to claim 36, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

40. The combined cleaning system of claim 37 or 39, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

41. The composite cleaning system according to claim 26, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

42. The combined cleaning system of claim 41, wherein, wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank.

43. The composite cleaning system according to claim 41, wherein: wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a tank, and the to-be-cleaned region of the object is subjected to the gas or liquid reactive cleaning step in the tank. wherein the gas or liquid cleaning device further comprises a 44. The composite cleaning system according to claim 41, wherein: In the laser reactive cleaning step, the laser cleaning device provides the pulsed energy focused at a focal point position at a distance from the target to be cleaned, so as to generate the cleaning effect on the target to be cleaned on the area to be cleaned by the plasma shock wave formed at the focal point position.

45. The combination cleaning system of claim 41, wherein the cleaning system is a combination of a vacuum cleaner and a steam cleaner. 45 In the laser reactive cleaning step, the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam.

46. The combination cleaning system of claim 41, wherein the cleaning system is a combination of a vacuum cleaner and a steam cleaner. In the laser reactive cleaning step, the laser cleaning device provides the pulsed energy focused at a focal point position at a distance from the target to be cleaned, so as to generate the cleaning effect on the target to be cleaned on the area to be cleaned by the plasma shock wave formed at the focal point position. In the laser reactive cleaning step, the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam. In the laser reactive cleaning step, the laser cleaning device provides the pulsed energy focused at a focal point position at a distance from the target to be cleaned, so as to generate the cleaning effect on the target to be cleaned on the area to be cleaned by the plasma shock wave formed at the focal point position. In the laser reactive cleaning step, the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam.

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