Sensor device and sensor system for determining orientation of magnet

Abstract

The invention provides a sensor device and a sensor system for determining an orientation of a magnet. A sensor device for determining the orientation (alpha, beta, phi, psi) of a magnet pivotable about a reference point (Pref), the sensor device comprising: a semiconductor substrate (703) comprising first and second magnetic sensors (S1, S2) spaced apart in a first direction (X), each magnetic sensor being configured for measuring a first magnetic field component (Bx1, Bx2) oriented in the first direction (X); a second magnetic field component (Bx2) oriented in a second direction (Y) and a second magnetic field component (By1, By2) oriented in a second direction (Y); wherein the sensor device further comprises processing circuitry configured to: i) determine a first magnetic field gradient (dBx / dx); ii) determining a second magnetic field gradient (dBy / dx); iii) determining a first angle (alpha, psi) based on the first magnetic field gradient (dBx / dx); iv) determining a second angle (beta, phi) based on the second magnetic field gradient (dBy / dx). A sensor system includes the sensor device and the magnet.

Description

TECHNICAL FIELD

[0001] The present invention relates generally to the field of magnetic position sensor systems, devices and methods, and more specifically to a magnetic position sensor device for measuring the position of a magnet pivotable about a fixed reference point. The invention also relates to a sensor system comprising said sensor device and said magnet, for example a sensor system in which said magnet is connected to a joystick. BACKGROUND

[0002] Magnetic position sensor systems, in particular linear position or angular position sensor systems, are known in the art. There are many variants of position sensor systems to address one or more of the following requirements: use of simple or cheap magnetic structures; use of simple or cheap sensor devices; ability to measure over a relatively large range; ability to measure with high accuracy; need for only simple arithmetic; ability to measure at high speed; high robustness to positioning errors; high robustness to external interference fields; provision of redundancy; ability to detect errors, ability to detect and correct errors; good signal-to-noise ratio (SNR); only one degree of freedom (translation or rotation); two degrees of freedom (e.g. one translation and one rotation, or two rotations), etc.

[0003] In many known systems, the system has only one degree of freedom of movement, e.g. rotation about a single axis or translation along a single axis.

[0004] Magnetic position sensor systems in which the magnet has at least two degrees of freedom are also known in the art, e.g. from EP 3875 915 (A1), which discloses a magnet movable along an axis and pivotable about said axis; or from US 2021 / 0110239 (A1), which discloses a circuit comprising at least one trained neural network for determining information about a position, pose or orientation of a magnet. These examples show that position sensor systems in which the magnet has at least 2 degrees of freedom are much more complex than systems with only 1 degree of freedom.

[0005] EP 4105 768 (A1) discloses a sensor system comprising: a semiconductor substrate having four magnetic sensors; and a magnet pivotable about a reference point and magnetized in a direction perpendicular to the semiconductor substrate when the magnet is in its neutral position.

[0006] EP 4357 800 (A1), to be published on 24 April 2024, discloses a device and method for determining an orientation of a magnet using magnetic field gradients and correction values.

[0007] There is always room for improvement or alternatives. SUMMARY

[0008] It is an object of embodiments of the invention to provide a sensor device and a sensor system for determining an orientation (ψ, α,β) (e.g. a unique position or a unique orientation) of a two-pole magnet pivotable about a fixed reference point. The fixed reference point can be seated at a predefined height above or below the semiconductor substrate (“above” means on the same side of the substrate as the magnet, “below” means on the opposite side of the substrate as the magnet).

[0009] In preferred embodiments, the orientation of the magnet is determined in a highly accurate manner; and / or has a reduced sensitivity to one or more or all of: temperature variations, mounting tolerances, demagnetization of the magnet, external interference fields (also referred to as “stray fields”); and / or requires a simpler sensor arrangement; and / or requires fewer sensor points; and / or provides an alternative solution.

[0010] These and other objects are achieved by embodiments of the invention.

[0011] According to a first aspect, the invention provides a sensor device for determining an orientation (e.g. α,β, ψ) of a two-pole magnet, the sensor device comprising: a semiconductor substrate comprising or being connected to at least a first magnetic sensor and a second magnetic sensor (e.g. S1, S2) spaced apart in a first direction (e.g. X) by a predefined distance (e.g. dx); wherein each of the first and second magnetic sensors (e.g. S1, S2) is configured to measure a first magnetic field component (e.g. Bx1, Bx2) oriented in said first direction (e.g. X), and wherein

[0012] In a first alternative, each of the first and second magnetic sensors (e.g. S1, S2) is further configured to measure a second magnetic field component (e.g. By1, By2) oriented in a second direction (e.g. Y) parallel to the semiconductor substrate and perpendicular to the first direction (X);

[0013] or in a second alternative, the semiconductor substrate further comprises a third magnetic sensor and a fourth magnetic sensor (e.g. S3, S4) spaced apart in a second direction (e.g. Y) by a second predefined distance (e.g. dy), the second direction (e.g. Y) being parallel to the semiconductor substrate and perpendicular to the first direction (e.g. X), the four magnetic sensors (e.g. S1, S2, S3, S4) being seated on a virtual ellipse; each of the third and fourth magnetic sensors (S3, S4) is configured to measure a first magnetic field component (e.g. Bx3, Bx4) oriented in said first direction (e.g. X);

[0014] or in a third alternative, the semiconductor substrate further comprises: a third magnetic sensor and a fourth magnetic sensor (e.g., S5, S6), the third magnetic sensor and the fourth magnetic sensor (e.g., S5, S6) being spaced apart in a second direction (e.g., Y) parallel to the semiconductor substrate and perpendicular to the first direction (e.g., X), the third magnetic sensor and the fourth magnetic sensor (e.g., S5, S6) being located on a virtual line YY offset (e.g., dxx) from a perpendicular bisector (e.g., Y) defined by the first magnetic sensor and the second magnetic sensor (e.g., S1, S2), each of the third magnetic sensor and the fourth magnetic sensor (e.g., S5, S6) being capable of measuring a magnetic field component (e.g., Bz5, Bz6) oriented in a third direction perpendicular to the substrate;

[0015] and wherein the magnet is movable relative to the sensor device such that a center (e.g., P) of the magnet is pivotable about a reference point (e.g., Pref) having a predefined position relative to the semiconductor substrate; wherein the sensor device further comprises a processing circuitry configured to: i) determine a first magnetic field gradient (e.g., dBx / dx) of the first magnetic field component (e.g., Bx1, Bx2) along the first direction (e.g., X); ii) determine, in the first alternative, a second magnetic field gradient (e.g., dBy / dx) of the second magnetic field component (e.g., By1, By2) along the first direction (e.g., X), and, in the second alternative, a second magnetic field gradient (e.g., dBx / dy) along the second direction (e.g., Y) based on signals obtained from the third sensor and the fourth sensor (e.g., S3, S4), and, in the third alternative, a second magnetic field gradient (e.g., dBz / dy) of the magnetic field component (e.g., Bz5, Bz6) obtained from the third sensor and the fourth sensor (e.g., S5, S6) along the second direction (e.g., Y); and iii) determine, based on the first magnetic field gradient (e.g., dBx / dx), a first angle (e.g., a, y); and iv) determine, based on the second magnetic field gradient (e.g., dBy / dx; dBx / dy; dBz / dy), a second angle (e.g., b, )..

[0016] In embodiments, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when a virtual line passing through the center (e.g., P) of the magnet and passing through the reference point (e.g., Pref) is oriented substantially perpendicular to the semiconductor substrate; or wherein an orthogonal projection of the center (e.g., P) of the magnet onto the semiconductor substrate substantially coincides with a point (e.g., C) located midway between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2); or wherein the magnet is magnetized in a direction substantially perpendicular to a virtual line passing through the center (e.g., P) of the magnet and passing through the reference point (e.g., Pref).

[0017] In embodiments, each of the first and second magnetic sensors (e.g., S1, S2) is further configured for measuring a magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the semiconductor substrate; and wherein the processing circuitry is further configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the magnetic field component (e.g., Bz1, Bz2) oriented in the third direction (e.g., Z) along the first direction (e.g., X); iii) determine the first angle (e.g., a, y) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx); and iv) determine the second angle (e.g., b, ) based on the second magnetic field gradient (e.g., dBy / dx; dBx / dy; dBz / dy) and the third magnetic field gradient (e.g., dBz / dx).

[0018] In embodiments, the sensor device further comprises a temperature sensor for measuring a temperature; and the processing circuitry is configured to i) determine a correction factor D1 as a predefined function of the measured temperature; and iii) determine the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1; iv) determine the second angle (e.g., b, ) based on the second magnetic field gradient (e.g., dBy / dx; dBx / dy; dBz / dy) and the correction factor D1.

[0019] In embodiments, the semiconductor substrate further comprises an additional magnetic sensor (e.g., S3; Sc; Sc) located intermediate (e.g., C) between the first and second magnetic sensors (e.g., S1, S2) configured for determining two or more of: a magnetic field component (e.g., Bxc) oriented in a first direction (e.g., X), a magnetic field component (e.g., Byc) oriented in a second direction (e.g., Y), and a magnetic field component (e.g., Bzc) oriented in a third direction (e.g., Z); and wherein the processing circuitry is configured: i) for determining a correction factor D2 as a square sum of two or more of the magnetic field components (e.g., Bxc, Byc, Bzc) measured by the additional magnetic sensor (e.g., S3; Sc; Sc); and ii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; iii) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx; dBx / dy; dBz / dy) and the correction factor D2. ).

[0020] In embodiments, the magnetic sensors are configured as specified in the first or second alternative; and the processing circuitry is configured: i) for determining a correction factor D3a as a square sum of the first magnetic field gradient (e.g., dBx / dx) and the second magnetic field gradient (e.g., dBy / dx; dBx / dy); and ii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3a; iii) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx; dBx / dy) and the correction factor D3a. ).

[0021] In embodiments, the magnetic sensor is configured as specified in the first alternative; and each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the semiconductor substrate; and wherein the processing circuitry is configured: i) to determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X); and ii) to determine a correction factor D3b as a square sum of two or three of the first, second, and third magnetic field gradients (e.g., dBx / dx, dBy / dx, dBz / dx); and iii) to determine the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3b; iv) to determine the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D3b; and v) to determine the third angle (e.g., g, y) based on the third magnetic field gradient (e.g., dBz / dx) and the correction factor D3b. ).

[0022] In embodiments, the magnetic sensor is configured as specified in the first alternative; and the semiconductor substrate further comprises a third sensor (e.g., S3) located intermediate (e.g., C) between the first and second sensors (e.g., S1, S2) and configured to determine a magnetic field component (e.g., Bxc) oriented in the first direction (e.g., X) and a magnetic field component (e.g., Byc) oriented in the second direction (e.g., Y); and wherein the processing circuitry is configured: i) to determine a second order gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X) and a second order gradient (e.g., d2By / dx2) of the second magnetic field component (e.g., By) along the first direction (e.g., X); and ii) to determine a correction factor D4a as a square sum of these second order gradients; and iii) to determine the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4a; iv) to determine the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4a; and v) to determine the third angle (e.g., g, y) based on the third magnetic field gradient (e.g., dBzc / dx) and the correction factor D4a. ).

[0023] In embodiments, the magnetic sensor is configured as specified in the first alternative; and each of the first and second magnetic sensors (e.g., S1, S2) is further configured for measuring a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate; and the semiconductor substrate further comprises a third magnetic sensor (e.g., S3) located at an intermediate (e.g., C) between the first and second magnetic sensors (e.g., S1, S2) configured for determining a magnetic field component Bxc oriented in the first direction (e.g., X), a magnetic field component Byc oriented in the second direction (e.g., Y), a magnetic field component Bzc oriented in the third direction (e.g., Z); and wherein the processing circuitry is configured for determining one or more of: a second order gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X), a second order gradient (e.g., d2By / dx2) of the second magnetic field component (e.g., By) along the first direction (e.g., X), a second order gradient (e.g., d2Bz / dx2) of the third magnetic field component (e.g., Bz) along the first direction (e.g., X); and for determining a correction factor D4b as a square sum of two or three of said second order gradients; and iii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4b; iv) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4b; v) for determining the third angle (e.g., g, y) based on the third magnetic field gradient (e.g., dBz / dx) and the correction factor D4b.

[0024] In embodiments, the sensor device is configured for storing a first relationship between the first magnetic field gradient and the first angle and / or a second relationship between the second magnetic field gradient and the second angle; and the processing circuitry is configured for determining the first angle based on the first magnetic field gradient and based on said first relationship; and / or determining the second angle based on the second magnetic field gradient and based on said second relationship; and preferably wherein the first relationship and / or the second relationship comprises a mathematical formula or a look-up table.

[0025] ​According to a second aspect, the present application also provides a sensor system comprising: a magnetic sensor device according to the first aspect; a two-pole magnet, wherein when a virtual line through the center (e.g., P) of the magnet and through a reference point (e.g., Pref) is oriented substantially perpendicular to the semiconductor substrate, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate; or wherein the orthogonal projection of the center (e.g., P) of the magnet onto the semiconductor substrate substantially coincides with a point (e.g., C) located halfway between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2); or wherein the magnet is magnetized in a direction substantially perpendicular to a virtual line through the center (e.g., P) of the magnet and through a reference point (e.g., Pref).

[0026] According to a third aspect, the present application provides a sensor device for determining an orientation (e.g., a, b, y) of a two-pole magnet; the sensor device comprising a semiconductor substrate comprising or being connected to at least a first magnetic sensor and a second magnetic sensor (S1, S2) spaced apart in a first direction (X) by a predefined distance (dx); wherein each of the first and second magnetic sensors (S1, S2) is configured for measuring a first magnetic field component (e.g., Bx1, Bx2) oriented in said first direction (X) and a second magnetic field component (e.g., By1, By2) oriented in a second direction (e.g., Y) parallel to the semiconductor substrate and perpendicular to the first direction (e.g., X); wherein the magnet is movable relative to the sensor device such that a center (e.g., P) of the magnet is pivotable about a reference point (Pref) having a predefined position (e.g., in the plane of the semiconductor substrate, above the semiconductor substrate, or below the semiconductor substrate) relative to the semiconductor substrate; wherein the sensor device further comprises a processing circuitry configured to: i) determine a first magnetic field gradient (e.g., dBx / dx) of the first magnetic field components (e.g., Bx1, Bx2) along said first direction (X); and ii) determine a second magnetic field gradient (e.g., dBy / dx) of the second magnetic field components (e.g., By1, By2) along said first direction (X); and iii) determine a first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx); and iv) determine a second angle (e.g., b, ) based on the second magnetic field gradient (e.g., dBy / dx).

[0027] Consider a virtual line segment [CP] formed between a point C midway between the first sensor and the second sensor and a point P at the center of the magnet. A first angle (α, ψ) may be formed between a first orthogonal projection of the virtual line segment [CP] on a first virtual plane (XZ) parallel to the first direction (X) and a third direction (Z) perpendicular to the semiconductor substrate, and the first direction (X) or the third direction (Z).

[0028] The second angle (β, ) can be formed between a second orthogonal projection of the virtual line segment [CP] on a second virtual plane (YZ) parallel to the second direction (Y) and the third direction (Z) and the second direction (Y) or the third direction (Z).

[0029] The orientation thus determined is found to have improved accuracy and reduced sensitivity to one or more or all of the following: temperature variations, mounting tolerances, external interfering fields, demagnetization of the magnet, and the like.

[0030] The semiconductor substrate may be a silicon substrate. Note that "the semiconductor substrate includes or is connected to a plurality of magnetic sensors" does not necessarily mean that the sensors are embedded in the semiconductor substrate, although they may be embedded in the semiconductor substrate, and does not necessarily mean that the sensors must be made of silicon. In fact, the magnetic sensors may be formed on top of or next to the semiconductor substrate and may include materials other than silicon, such as ferromagnetic materials (xMR) or semiconductor compounds (e.g., III-V compounds).

[0031] The processing circuitry may be embedded in the semiconductor substrate which also comprises the magnetic sensor, but this is not absolutely necessary.In an embodiment, the sensor device comprises two silicon substrates, a first silicon substrate comprising the magnetic sensor and a second silicon substrate comprising the processing circuitry.

[0032] The processing circuitry is preferably implemented in a CMOS substrate (ie, a semiconductor substrate produced using a CMOS-compatible process).

[0033] In an embodiment, the magnet may be tilted about said reference point (Pref) by a first angle ψ in the range from -30° to +30° and / or by a second angle in the range from -30° to +30°.

[0034] Preferably, the semiconductor substrate has a thickness less than 9.0 mm 2 , or less than 7.0mm 2 , or less than 5.0mm 2 , or less than 4.0mm 2 area.

[0035] The magnet is a two-pole magnet, for example, a cylindrical two-pole magnet, or a two-pole bar magnet, or a two-pole spherical magnet.

[0036] In embodiments, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when a virtual line through the center (P) of the magnet and through the reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0037] In embodiments, the orthogonal projection of the center (P) of the magnet onto the semiconductor substrate substantially coincides with a point (C) located halfway between the first magnetic sensor (SI) and the second magnetic sensor (S2).

[0038] In embodiments, the magnet is magnetized in a direction substantially perpendicular to a virtual line through the center (P) of the magnet and through the reference point (Pref).

[0039] Or, in short: when the magnet is in its "neutral position" (e.g. as illustrated in Figure 1 , Figure 6A , Figure 7A , Figure 8A , Figure 9A , Figure 15 , Figure 23A i.e. when ψ = 0° and , the magnet is magnetized in a direction parallel to the semiconductor substrate. Where "orthogonal projection" means: "projection in a direction perpendicular to the substrate (Z)". Where "substantially coincides" means e.g.: the projection of the center P lies at most 1.0 mm or at most 0.7 mm or at most 0.5 mm or at most 0.3 mm away from the point C.

[0040] In embodiments, the magnet has a cylindrical shape. The cylindrical shape can have a height in the range from 2.0 mm to 15.0 mm and can have a diameter in the range from 2.0 mm to 15.0 mm. In embodiments, the cylindrical shape can have a height in the range from 3.0 mm to 8.0 mm and a diameter in the range from 3.0 mm to 8.0 mm.

[0041] In embodiments, the magnet is of a substantially cylindrical shape having a height and a diameter, wherein the ratio H / D of the height H to the diameter D has a value in the range from 50% to 200%, or in the range from 75% to 150%, or in the range from 80% to 130%, or in the range from 90% to 115%, or in the range from 50% to 100%, or in the range from 50% to 100%, or in the range from 51% to 99%, or in the range from 101% to 200%.

[0042] In embodiments, the magnet has a substantially elliptical shape.

[0043] In embodiments, the magnet has a substantially spherical shape. The spherical shape can have a diameter in a range from 2.0 to 15.0 mm, or in a range from 3.0 mm to 8.0 mm.

[0044] In embodiments, the magnet has a substantially beam shape.

[0045] In embodiments, each of the first and second magnetic sensors (S1, S2) is further configured for measuring a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate; and the processing circuitry is configured: v) for determining a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X); iii) for determining the first angle (e.g., a, y) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx); and iv) for determining the second angle (e.g., b, y) based on the second and third magnetic field gradients (e.g., dBy / dx, dBz / dx). ).

[0046] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx), e.g., as an arctan or atan2 function of the ratio.

[0047] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the third magnetic field gradient (dBz / dx), e.g., as an arctan or atan2 function of the ratio.

[0048] The third magnetic field gradient is related to (e.g., indicative of) the magnetic field strength of the magnet, and for small angular displacements of the magnet, the third magnetic field gradient is substantially independent of the orientation of the magnet.

[0049] Such a sensor device has the advantage that the angular position is highly accurate and has reduced sensitivity to temperature variations, demagnetization of the magnet, mounting tolerances, and external disturbance fields.

[0050] In embodiments, the sensor device further comprises a temperature sensor for measuring a temperature (e.g., a temperature of the magnet or a temperature of the semiconductor substrate); and the processing circuitry is configured: for determining a correction factor D1 as a predefined function of the measured temperature; and iii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1 ; iv) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D1. ).

[0051] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the correction factor D1.

[0052] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the correction factor D1.

[0053] The temperature can be a temperature obtained from an internal temperature sensor comprised in the sensor device (e.g. embedded in the silicon substrate) or can be a temperature obtained from an external temperature sensor (e.g. mounted to or mounted in the vicinity of the magnet) which is electrically connected to the sensor device.

[0054] The predefined function can be stored in a non-volatile memory of the sensor device, e.g. in the form of a look-up table or in the form of a set of coefficients of a polynomial expression or in any suitable form.

[0055] An advantage of such a sensor device is that the angular position is highly accurate and has a reduced sensitivity to temperature variations and to external disturbing fields.

[0056] In embodiments, the semiconductor substrate further comprises a third magnetic sensor (S3) located at a middle (C) between the first and second magnetic sensors (S1, S2) configured to determine two or more of: a magnetic field component (e.g. Bxc) oriented in a first direction (e.g. X), a magnetic field component (e.g. Byc) oriented in a second direction (e.g. Y), a magnetic field component (e.g. Bzc) oriented in a third direction (e.g. Z); and wherein the processing circuitry is configured: i) to determine a correction factor D2 as a sum of squares of two or more of the magnetic field components (e.g. Bxc, Byc, Bzc) measured by the third magnetic sensor (e.g. S3); and ii) to determine the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D2; iii) to determine the second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBy / dx) and the correction factor D2. ).

[0057] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D2.

[0058] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the square root of the correction factor D2.

[0059] In embodiments, the processing circuitry is configured: i) to determine a correction factor D3a as a sum of squares of the first magnetic field gradient and the second magnetic field gradient (e.g. dBx / dx, dBy / dx); and iii) to determine the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D3a; iv) to determine the second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBy / dx) and the correction factor D3a, ).

[0060] In this embodiment, the correction factor D3a is calculated as (dBx / dx) 2 + (dBy / dx) 2 In this case, the sensors S1, S2 need to be able to measure Bx and By, but not necessarily Bz.

[0061] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) to the square root of the correction factor D3a.

[0062] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) to the square root of the correction factor D3a.

[0063] In embodiments, the first and second magnetic sensors (S1, S2) are further configured to measure a third magnetic field component (e.g. Bz1, Bz2) oriented in a third direction (e.g. Z) perpendicular to the substrate; and the processing circuitry is configured: i) to determine a third magnetic field gradient (e.g. dBz / dx) of the third magnetic field component (e.g. Bz1, Bz2) along said first direction (e.g. X); and ii) to determine a correction factor D3b as a sum of squares of two or three of said first, second and third magnetic field gradients (e.g. dBx / dx, dBy / dx, dBz / dx); and iii) to determine the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D3b; iv) to determine the second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBy / dx) and the correction factor D3b, ).

[0064] The correction factor D3b can be calculated as (dBx / dx) 2 + (dBz / dx) 2 .

[0065] The correction factor D3b can be calculated as (dBy / dx) 2 + (dBz / dx) 2 .

[0066] The correction factor D3b can be calculated as (dBx / dx)2 + (dBy / dx) 2 + (dBz / dx) 2 .

[0067] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (e.g. dBx / dx) to the square root of the correction factor D3b.

[0068] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (e.g. dBy / dx) to the square root of the correction factor D3b.

[0069] In an embodiment, the semiconductor substrate further comprises a third sensor (S3) located at an intermediate (e.g. C) between the first and second sensors (S1, S2) and configured for determining a magnetic field component (e.g. Bxc) oriented in the first direction (e.g. X) and a magnetic field component (e.g. Byc) oriented in the second direction (e.g. Y); and wherein the processing circuitry is configured: i) for determining a second order gradient of the first magnetic field component (e.g. Bx) along the first direction (e.g. d2Bx / dx2) and a second order gradient of the second magnetic field component (By) along the first direction (e.g. d2By / dx2); and ii) for determining a correction factor D4a as the sum of the squares of these second order gradients; and iii) for determining a first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D4a; iv) for determining a second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBy / dx) and the correction factor D4a. ).

[0070] In this embodiment, the three sensors S1, S2, S3 need to be able to measure Bx and By, but not necessarily Bz.

[0071] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (e.g. dBx / dx) to the square root of the correction factor D4a.

[0072] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (e.g. dBy / dx) to the square root of the correction factor D4a.

[0073] In embodiments, each of the first and second magnetic sensors (S1, S2) is further configured for measuring a third magnetic field component (e.g. Bz1, Bz2) oriented in a third direction (e.g. Z) perpendicular to the substrate; and wherein the semiconductor substrate further comprises a third magnetic sensor (e.g. S3) located at a middle (C) between the first and second magnetic sensors (S1, S2) configured for determining a magnetic field component (e.g. Bxc) oriented in the first direction (e.g. X), a magnetic field component (e.g. Byc) oriented in the second direction (e.g. Y), a magnetic field component (e.g. Bzc) oriented in the third direction (e.g. Z); and wherein the processing circuitry is configured for determining one or more of: a second order gradient (e.g. d2Bx / dx2) of the first magnetic field component (e.g. Bx) along the first direction (e.g. X), a second order gradient (e.g. d2By / dx2) of the second magnetic field component (e.g. By) along the first direction (e.g. X), a second order gradient (e.g. d2Bz / dx2) of the third magnetic field component (e.g. Bz) along the first direction (e.g. X); and for determining a correction factor D4b as a square sum of two or three of said second order gradients; and iii) for determining the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D4b; iv) for determining the second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBy / dx) and the correction factor D4b; v) for determining the third angle (e.g. g, y) based on the third magnetic field gradient (e.g. d2Bz / dx2) and the correction factor D4b.

[0074] The correction factor D4b can be calculated as (d2Bx / dx2) 2 +(d2Bz / dx2) 2 .

[0075] The correction factor D4b can be calculated as (d2By / dx2) 2 +(d2Bz / dx2) 2 .

[0076] The correction factor D4b can be calculated as (d2Bx / dx2) 2 +(d2By / dx2) 2 +(d2Bz / dx2) 2 .

[0077] The first angle can be calculated as a function of a ratio of the first magnetic field gradient (e.g. dBx / dx) to a square root of the correction factor D4b.

[0078] The second angle can be calculated as a function of a ratio of the second magnetic field gradient (e.g. dBy / dx) to a square root of the correction factor D4b. ​

[0079] In embodiments, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2, which are located on a virtual line X, and each of the first and second magnetic sensors comprises an integrated magnetic flux concentrator (IMC) and four horizontal Hall elements, which are arranged near the outer periphery of the IMC, angularly spaced by multiples of 90°, e.g., as illustrated in Figure 10A to Figure 10D .

[0080] In embodiments, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2, which are located on a virtual line X, and each of the first and second magnetic sensors comprises a horizontal Hall element, one or two vertical Hall elements arranged for measuring Bx, and one or two vertical Hall elements arranged for measuring By, e.g., as illustrated in Figure 11 .

[0081] In embodiments, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2, which are located on a virtual line X, and each of the first and second magnetic sensors comprises one or two vertical Hall elements arranged for measuring Bx, and one or two vertical Hall elements arranged for measuring By, e.g., as illustrated in Figure 12 .

[0082] In embodiments, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2, which are located on a virtual line X, and each of the first and second magnetic sensors comprises one or more magnetoresistive (MR) elements arranged for measuring Bx, and one or more vertical magnetoresistive (MR) elements arranged for measuring By.

[0083] In embodiments, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3, which are located on a virtual line X, and each of the magnetic sensors comprises an integrated magnetic flux concentrator (IMC) and four horizontal Hall elements, which are arranged near the outer periphery of the IMC, angularly spaced by multiples of 90°.

[0084] In embodiments, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3, which are located on a virtual line X, and each of the magnetic sensors comprises one or two vertical Hall elements arranged for measuring Bx, and one or two vertical Hall elements arranged for measuring By, but no horizontal Hall elements.

[0085] In embodiments, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3, which are located on a virtual line X, and each of these magnetic sensors comprises one or more magnetoresistive (MR) elements arranged for measuring Bx and one or more perpendicular magnetoresistive (MR) elements arranged for measuring By.

[0086] In embodiments, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3, which are located on a virtual line X, and each of these magnetic sensors comprises one or two perpendicular Hall elements arranged for measuring Bx and one or two perpendicular Hall elements arranged for measuring By, the magnetic pixel S3, which is located only between S1 and S2, further comprising a horizontal Hall element, e.g. as illustrated in Figure 13

[0087] The present invention also provides a sensor system comprising: a magnetic sensor device according to the third aspect; and said dipole magnet.

[0088] When the line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g. within a tolerance margin of ±10° or ±5°), the dipole magnet is preferably magnetized in a direction parallel to the semiconductor substrate.

[0089] The sensor system can be a joystick assembly.

[0090] The sensor system can further comprise a joystick connected to or comprising said magnet.

[0091] In embodiments, the magnet has a cylindrical shape with a diameter D and is mounted such that when the center (P) of the magnet is located “directly above” a point (C) located halfway between the first sensor (S1 ) and the second sensor (S2), i.e. when the magnet is in its “neutral position”, the distance “g” between the point P and the point C is at least 2.0 mm + (D / 2) and at most 10.0 mm + (D / 2).

[0092] According to a fourth aspect, the present invention provides a method for determining the orientation (e.g. a, b, ​a sensor device of claim 1 ; the sensor device comprising a semiconductor substrate comprising or being connected to at least four magnetic sensors (e.g., S1, S2, S3, S4) positioned on a virtual ellipse, comprising a first magnetic sensor and a second magnetic sensor (e.g., S1, S2) spaced apart in a first direction (e.g., X) by a first predefined distance (e.g., dx), and comprising a third magnetic sensor and a fourth magnetic sensor (e.g., S3, S4) spaced apart in a second direction parallel to the semiconductor substrate and perpendicular to the first direction (e.g., X) by a second predefined distance (e.g., dy, which is equal to dx, greater than dx, or smaller than dx); wherein each magnetic sensor (e.g., S1, S2, S3, S4) is configured to measure a first magnetic field component (e.g., Bx1, Bx2, Bx3, Bx4) oriented in said first direction (e.g., X); wherein the magnet is movable relative to the sensor device such that a center (P) of the magnet is pivotable about a reference point (Pref) having a predefined position (e.g., in the plane of the semiconductor substrate, above the semiconductor substrate, or below the semiconductor substrate) relative to the semiconductor substrate; wherein the sensor device further comprises a processing circuitry configured to: i) determine a first magnetic field gradient (e.g., dBx / dx) along said first direction (e.g., X) based on signals obtained from the first and second sensors (S1, S2); ii) determine a second magnetic field gradient (e.g., dBx / dy) along said second direction (e.g., Y) based on signals obtained from the third and fourth sensors (e.g., S3, S4); and iii) determine a first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx); and iv) determine a second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBx / dy).

[0093] The same remarks made for claim 1 (regarding e.g., the segment [CP], the first angle a or y, the second angle b or The semiconductor substrate(s), and the CMOS substrate, are also applicable here.

[0094] In embodiments, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when a virtual line passing through the center (P) of the magnet and passing through the reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0095] In embodiments, the orthogonal projection of the center (P) of the magnet on the semiconductor substrate substantially coincides with a point (C) located midway between the first magnetic sensor (S1 ) and the second magnetic sensor (S2). ​

[0096] The same comments as made for claim 2 (regarding eg the "neutral position" and possible shapes of the magnets) apply here as well.

[0097] In an embodiment, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center (P) of the magnet and through a reference point (Pref).

[0098] In an embodiment, each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate; and wherein the processing circuit is configured to: v) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient and the third magnetic field gradient (e.g., dBx / dx, dBz / dx); and iv) determine a second angle (e.g., β, ψ) based on the second magnetic field gradient and the third magnetic field gradient (e.g., dBy / dx, dBz / dx). ).

[0099] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) to the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of the ratio.

[0100] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) to the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of the ratio.

[0101] An advantage of such a sensor device is that the angular position is highly accurate and has reduced sensitivity to temperature changes, magnet demagnetization, mounting tolerances and external interfering fields.

[0102] In embodiments, each magnetic sensor (e.g., S1, S2, S3, S4) is further configured for measuring a third magnetic field component (e.g., Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g., Z) perpendicular to the substrate; and wherein the processing circuitry is configured: v) for determining a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field components (e.g., Bz1, Bz2) obtained from the first and second magnetic sensors (e.g., S1, S2) along the first direction (e.g., X); and vi) for determining a fourth magnetic field gradient (e.g., dBz / dy) of the third magnetic field components (e.g., Bz3, Bz4) obtained from the third and fourth magnetic sensors (e.g., S3, S4) along the second direction (e.g., Y); and iii) for determining the first angle (e.g., a, y) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx); and iv) for determining the second angle (e.g., b, y) based on the second and fourth magnetic field gradients (e.g., dBx / dy, dBz / dy); and v) for determining the position (e.g., x, y) based on the first and second angles (e.g., a, b, y, y).

[0103] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx), e.g., as an arctan or atan2 function of said ratio.

[0104] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the fourth magnetic field gradient (dBz / dy), e.g., as an arctan or atan2 function of said ratio.

[0105] In embodiments, the sensor device further comprises a temperature sensor for measuring a temperature (e.g., a temperature of the magnet or a temperature of the semiconductor substrate); and wherein the processing circuitry is configured: for determining a correction factor D1 as a predefined function of the measured temperature; and iii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1 ; iv) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D1 ; and v) for determining the position (e.g., x, y) based on the first and second angles (e.g., a, b, y, y).

[0106] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the correction factor D1.

[0107] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the correction factor D1.

[0108] ​​In embodiments, the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located at a middle (C) between the first and second magnetic sensors (S1, S2) configured to determine two or more of: a magnetic field component oriented in the first direction (X) (e.g., Bxc), a magnetic field component oriented in the second direction (Y) (e.g., Byc), a magnetic field component oriented in the third direction (Z) (e.g., Bzc); and wherein the processing circuitry is configured: i) to determine a correction factor D2 as a square sum of two or more of the magnetic field components (e.g., Bxc, Byc, Bzc) measured by the fifth magnetic sensor (Sc); and iii) to determine the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; iv) to determine the second angle (e.g., b, b) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D2. ).

[0109] The first angle can be calculated as a function of a ratio of the first magnetic field gradient (e.g., dBx / dx) to a square root of the correction factor D2.

[0110] The second angle can be calculated as a function of a ratio of the second magnetic field gradient (e.g., dBx / dy) to a square root of the correction factor D2.

[0111] In embodiments, the processing circuitry is configured: i) to determine a correction factor D3a as a square sum of the first and second magnetic field gradients (e.g., dBx / dx, dBx / dy); and iii) to determine the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3a; iv) to determine the second angle (e.g., b, b) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D3a. ).

[0112] In this embodiment, the correction factor D3a is calculated as (dBx / dx) 2 + (dBx / dy) 2 In this case, the sensors S1, S2, S3, S4 need to be able to measure Bx, but do not necessarily have to measure By and Bz.

[0113] The first angle can be calculated as a function of a ratio of the first magnetic field gradient (e.g., dBx / dx) to a square root of the correction factor D3a.

[0114] The second angle can be calculated as a function of a ratio of the second magnetic field gradient (e.g., dBx / dy) to a square root of the correction factor D3a.

[0115] In embodiments, at least two of the magnetic sensors (e.g. S1, S2, S3, S4) are further configured for measuring a third magnetic field component (e.g. Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g. Z) perpendicular to the substrate; and wherein the processing circuitry is configured: v) for determining a third magnetic field gradient (e.g. dBz / dx) of the third magnetic field component (e.g. Bz1, Bz2) along the first direction (X) from the first and second magnetic sensors (S1, S2); and vi) for determining a fourth magnetic field gradient (e.g. dBz / dy) of the third magnetic field component (e.g. Bz3, Bz4) along the second direction (e.g. Y) from the third and fourth magnetic sensors (e.g. S3, S4); and wherein the processing circuitry is configured: for determining the correction factor D3b as a weighted sum of squares of at least two or at least three of the first, second, third and fourth magnetic field gradients (e.g. dBx / dx, dBx / dy, dBz / dx, dBz / dy); and iii) for determining the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D3b; iv) for determining the second angle (e.g. b, 9) based on the second magnetic field gradient (e.g. dBx / dy) and the correction factor D3b; v) for determining the third angle (e.g. a, y) based on the third magnetic field gradient (e.g. dBz / dx) and the correction factor D3b; and vi) for determining the fourth angle (e.g. b, 9) based on the fourth magnetic field gradient (e.g. dBz / dy) and the correction factor D3b.

[0116] In embodiments, the correction factor D3b is calculated as w1*(dBx / dx) 2 +w2*(dBx / dy) 2 +w3*(dBz / dx) 2 where each of w1, w2, w3 is different from 0.0. In this case, the gradient dBz / dy does not need to be determined, so step vi) can be omitted, S1 and S2 need to be able to measure Bx and Bz, and S3 and S4 need to be able to measure Bx, but not Bz.

[0117] In embodiments, the correction factor D3b is calculated as w1*(dBx / dx) 2 +w2*(dBx / dy) 2 +w3*(dBz / dy) 2 where each of w1, w2, w3 is different from 0.0. In this case, the gradient dBz / dx does not need to be determined, so step v) can be omitted, S1 and S2 need to be able to measure Bx, but not Bz, and S3 and S4 need to be able to measure Bx and Bz.

[0118] In embodiments, the correction factor D3b is calculated as w1*(dBx / dx) 2 +w2*(dBx / dy) 2 ​+ w3 * (dBz / dx) 2 + w4 * (dBz / dy) 2 where each of wl, w2, w3, w4 is different from 0.0. In this case each of S1 to S4 needs to be able to measure Bx and Bz.

[0119] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D3b.

[0120] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the square root of the correction factor D3b.

[0121] In an embodiment, the semiconductor substrate further comprises a fifth sensor (e.g. Sc) located at an intermediate (e.g. C) between the first and second sensors (e.g. S1, S2) and configured for determining a magnetic field component Bxc oriented in a first direction (e.g. X); and wherein the processing circuitry is configured: v) for determining a second order gradient (e.g. d2Bx / dx2) of the first magnetic field component (e.g. Bx) along the first direction (e.g. X); and vi) for determining a second order gradient (e.g. d2Bx / dy2) of the first magnetic field component (e.g. Bx) along a second direction (e.g. Y); and for determining a correction factor D4a as the sum of the squares of these second order gradients (e.g. d2Bx / dx2, d2Bx / dy2); and iii) for determining a first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D4a; iv) for determining a second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBx / dy) and the correction factor D4a. ).

[0122] In this embodiment, D4a = (d2Bx / dx2) 2 + (d2Bx / dy2) 2 and the five sensors S1, S2, S3, S4, Sc need to be able to measure Bx, but not necessarily By or Bz.

[0123] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D4a.

[0124] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the square root of the correction factor D4a.

[0125] In embodiments, at least two of the four magnetic sensors (e.g., S1, S2, S3, S4) are further configured for measuring a third magnetic field component (e.g., Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g., Z) perpendicular to the substrate; and wherein the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located at an intermediate (e.g., C) between the first and second magnetic sensors (e.g., S1, S2) configured for determining a magnetic field component (e.g., Bxc) oriented in the first direction (e.g., X) and a magnetic field component (e.g., Bzc) oriented in the third direction (e.g., Z); and wherein the processing circuitry is configured: for determining two or more of: a second order gradient of the first magnetic field component (e.g., Bx) along the first direction (e.g., d2Bx / dx2), a second order gradient of the first magnetic field component (e.g., By) along the second direction (e.g., d2Bx / dy2), a second order gradient of the third magnetic field component (e.g., Bz) along the first direction (e.g., d2Bz / dx2), a second order gradient of the third magnetic field component (e.g., Bz) along the second direction (e.g., d2Bz / dy2); and for determining the correction factor D4b as a weighted sum of the squares of at least two or at least three or four of these second order magnetic field gradients (e.g., d2Bx / dx2, d2Bx / dy2, d2Bz / dx2, d2Bz / dy2); and iii) for determining the first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4b; iv) for determining the second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4b; v) for determining the third angle (e.g., g, y) based on the third magnetic field gradient (e.g., dBz / dx) and the correction factor D4b; and vi) for determining the fourth angle (e.g., h, y) based on the fourth magnetic field gradient (e.g., dBz / dy) and the correction factor D4b.

[0126] In embodiments, the correction factor D4b is calculated as w1*(d2Bx / dx2) 2 +w2*(dB2x / dy2) 2 +w3*(d2Bz / dx2) 2 where each of w1, w2, w3 is different from 0.0. In this case, the second order gradient d2Bz / dy2 does not need to be determined, S1, S2, Sc need to be able to measure Bx and Bz, and S3, S4 need to be able to measure Bx but do not necessarily need to measure Bz.

[0127] In embodiments, the correction factor D4b is calculated as w1*(d2Bx / dx2) 2 +w2*(dB2x / dy2) 2 +w3*(d2Bz / dy2) 2 ​where each of w1, w2, w3 is different from 0.0. In this case, the second order gradient d2Bz / dx2 does not need to be determined, S3, S4, Sc need to be able to measure Bx and Bz, and S1, S2 need to be able to measure Bx but do not necessarily have to measure Bz.

[0128] In an embodiment, the correction factor D4b is calculated as w1*(d2Bz / dx2) 2 + w2*(d2Bz / dy2) 2 + w3*(d2Bx / dx2) 2 + w4*(d2Bz / dy2) 2 where each of w1, w2, w3, w4 is different from 0.0. In this case, each of S1, S2, S3, S4, Sc needs to be able to measure Bx and Bz.

[0129] In an embodiment, the correction factor D4b is calculated as w1*(d2Bz / dx2) 2 + w2*(d2Bz / dy2) 2 where each of w1, w2 is different from 0.0. In this case, the second order gradients d2Bx / dx2 and d2Bx / dy2 do not need to be determined, and each of S1, S2, S3, S4, Sc needs to be able to measure Bx and Bz.

[0130] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (e.g. dBx / dx) and the square root of the correction factor D4b.

[0131] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (e.g. dBx / dy) and the square root of the correction factor D4b.

[0132] In an embodiment, the semiconductor substrate comprises or is connected to four magnetic sensors S1, S2, S3, S4, which are positioned on a virtual ellipse, comprising two magnetic pixels S1, S2 positioned on a virtual line X and spaced apart by a first distance (dx), and comprising two magnetic pixels S3, S4 positioned on a virtual line Y and spaced apart by a second distance (dy).

[0133] In an embodiment, each of the four magnetic sensors is or comprises a vertical Hall element arranged for measuring the Bx component, e.g. as illustrated in Figure 17 , Figure 20 , Figure 21 In an embodiment, the semiconductor substrate further comprises a temperature sensor, e.g. as illustrated in Figure 20as illustrated in Figure 21 The 3D magnetic pixel can comprise, for example, a horizontal Hall element and at least two vertical Hall elements, or can comprise an IMC and four horizontal Hall elements.

[0134] In embodiments, each of the sensors S1, S2 comprises an integrated magnetic concentrator (IMC) and at least two horizontal Hall elements arranged for measuring Bx and Bz components; and each of the sensors S3, S4 is or comprises a vertical Hall element arranged for measuring Bx components, for example as illustrated in Figure 16

[0135] In embodiments, each of the sensors S1, S2 comprises a horizontal Hall element for measuring Bz components and a vertical Hall element for measuring Bx components; and each of the sensors S3, S4 is or comprises a vertical Hall element arranged for measuring Bx components, for example as illustrated in Figure 17

[0136] In embodiments, each of the sensors S1, S2, S3, S4 comprises an integrated magnetic concentrator (IMC) and at least two horizontal Hall elements arranged for measuring Bx and Bz components, for example as illustrated in Figure 18 Optionally, the semiconductor substrate can further comprise a fifth sensor S5 arranged at the center of the virtual ellipse and also comprising an IMC and at least two horizontal Hall elements, for example as illustrated in Figure 19

[0137] In all of the above-mentioned embodiments, magnetoresistive (MR) elements can be used instead of vertical Hall elements.

[0138] The application also provides a sensor system comprising a magnetic sensor device according to the fourth aspect; and the dipole magnet.

[0139] When the line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g. within a tolerance margin of ±10° or ±5°), the dipole magnet is preferably magnetized in a direction parallel to the semiconductor substrate.

[0140] According to a fifth aspect, the application provides a method for determining an orientation (e.g. a, b, ​​​sensor device of the first angle (e.g., a or y) and of the second angle (e.g., b or y) based on the first magnetic field gradient (e.g., dBx / dx) and on the second magnetic field gradient (e.g., dBz / dy), respectively; and iv) for determining the position (e.g., x, y) of the center (P) of the magnet based on the first angle (e.g., a or y) and on the second angle (e.g., b or y), respectively.

[0141] The same remarks made for claim 1 (regarding e.g. the line segment [CP], the first angle a or y, the second angle b or y, the semiconductor substrate(s), and the CMOS substrate) are also applicable here.

[0142] In embodiments, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when a virtual line through the center (P) of the magnet and through the reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0143] ​​In embodiments, the orthogonal projection of the center (P) of the magnet onto the semiconductor substrate substantially coincides with a point (C) located halfway between the first magnetic sensor (S1) and the second magnetic sensor (S2).

[0144] In embodiments, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center (P) of the magnet and through the reference point (Pref).

[0145] The same remarks made for claim 2 (regarding e.g. the "neutral position" of the magnet and possible shapes) are also applicable here.

[0146] In embodiments, each of the first and second magnetic sensors (e.g. S1, S2) is further configured for measuring a magnetic field component (e.g. Bz1, Bz2) oriented in a third direction (e.g. Z) perpendicular to the substrate; and wherein the processing circuitry is further configured: v) for determining a third magnetic field gradient (e.g. dBz / dx) of the magnetic field component (e.g. Bz1, Bz2) oriented in the third direction (e.g. Z) along the first direction (e.g. X); and iii) for determining the first angle (e.g. a, y) based on the first magnetic field gradient and the third magnetic field gradient (e.g. dBx / dx, dBz / dx); and iv) for determining the second angle (e.g. b, y) based on the second magnetic field gradient and the third magnetic field gradient (e.g. dBz / dy, dBz / dx), )..

[0147] The first angle can be computed as a function of the ratio of the first magnetic field gradient (e.g. dBx / dx) to the third magnetic field gradient (e.g. dBz / dx), e.g. as an arctan or atan2 function of said ratio.

[0148] The second angle can be computed as a function of the ratio of the second magnetic field gradient (e.g. dBz / dy) to the third magnetic field gradient (e.g. dBz / dx), e.g. as an arctan or atan2 function of said ratio.

[0149] In embodiments, the sensor device further comprises a temperature sensor for measuring a temperature (e.g. the temperature of the magnet or the temperature of the semiconductor substrate); and wherein the processing circuitry is configured: for determining a correction factor D1 as a predefined function of the measured temperature; and iii) for determining the first angle (e.g. a, y) based on the first magnetic field gradient (e.g. dBx / dx) and the correction factor D1; iv) for determining the second angle (e.g. b, y) based on the second magnetic field gradient (e.g. dBz / dy) and the correction factor D1, )..

[0150] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (e.g., dBx / dx) to the square root of the correction factor D2.

[0151] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (e.g., dBz / dy) to the square root of the correction factor D2.

[0152] In embodiments, the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located at an intermediate (e.g., C) between the first and second magnetic sensors (e.g., S1, S2) configured to determine two or more of: a magnetic field component (e.g., Bxc) oriented in a first direction (e.g., X), a magnetic field component (e.g., Byc) oriented in a second direction (e.g., Y), a magnetic field component (e.g., Bzc) oriented in a third direction (e.g., Z); and wherein the processing circuitry is configured: i) to determine a correction factor D2 as a sum of squares of two or more of the magnetic field components (Bxc, Byc, Bzc) measured by the fifth magnetic sensor (Sc); and ii) to determine a first angle (e.g., a, y) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; iii) to determine a second angle (e.g., b, y) based on the second magnetic field gradient (e.g., dBz / dy) and the correction factor D2. ).

[0153] The first angle can be calculated as a function of the ratio of the first magnetic field gradient (e.g., dBx / dx) to the square root of the correction factor D2.

[0154] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (e.g., dBz / dy) to the square root of the correction factor D2.

[0155] In embodiments, each of the first and second magnetic sensors comprises an integrated magnetic flux concentrator (IMC) and two horizontal Hall elements angularly spaced by 180°, and the third and fourth magnetic sensors (S5, S6) are horizontal Hall elements without an IMC. Optionally, the semiconductor substrate further comprises a fifth and a sixth magnetic sensor, e.g., as illustrated in Figure 25 .

[0156] In embodiments, each of the first and second magnetic sensors (S1, S2) is or comprises a vertical Hall element arranged for measuring the Bx component, and each of the third and fourth magnetic sensors (S5, S6) is a horizontal Hall element, e.g., as illustrated in Figure 25Each of the first and second sensors (S1, S2) further comprises a horizontal Hall element, as illustrated in the middle. Optionally, each of the first and second sensors (S1, S2) further comprises a vertical Hall element, as illustrated in the right.

[0157] The application also provides a sensor system comprising: a magnetic sensor device according to the fifth aspect; and the two-pole magnet.

[0158] When the line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g. within a tolerance margin of ±10° or ±5°), the two-pole magnet is preferably magnetized in a direction parallel to the semiconductor substrate.

[0159] In embodiments, the sensor system comprises a sensor device and a two-pole magnet, the sensor device comprising a semiconductor substrate comprising or being connected to a plurality of magnetic sensors (e.g. S1, S2; S1, S2, S3, S4; S1, S2, S5, S6) spaced apart from each other; the sensor device further comprising a processing circuitry (e.g. implemented on the same semiconductor substrate, or on a second semiconductor substrate) configured to determine at least a first magnetic field gradient and a second magnetic field gradient, and to determine a first angle (e.g. a, y) based on the first magnetic field gradient, and to determine a second angle (e.g. b, y) based on the second magnetic field gradient; ); the two-pole magnet being movable relative to the sensor device such that a center (e.g. P) of the magnet is pivotable around a reference point (e.g. Pref) having a predefined position (e.g. in the plane of the semiconductor substrate, above the semiconductor substrate, below the semiconductor substrate) relative to the semiconductor substrate; wherein the magnet is magnetized in a direction parallel to the semiconductor when a virtual line passing through the center (e.g. P) of the magnet and through the reference point (e.g. Pref) is oriented perpendicular to the semiconductor substrate; or wherein an orthogonal projection of the center (e.g. P) of the magnet on the semiconductor substrate substantially coincides with a point (e.g. C) located midway between a first sensor (e.g. S1 ) and a second sensor (e.g. S2); or wherein the magnet is magnetized in a direction substantially perpendicular to a virtual line passing through the center (e.g. P) of the magnet and through the reference point (e.g. Pref).

[0160] In embodiments, the plurality of magnetic sensors comprises two sensors (e.g. S1, S2) spaced apart along a first direction (e.g. X), each of which is capable of measuring at least two magnetic field components.

[0161] In embodiments, the plurality of magnetic sensors comprises four magnetic sensors (e.g. S1, S2, S3, S4; S1, S2, S5, S6), which comprises a first sensor and a second sensor (e.g. S1, S2) spaced apart along a first direction (e.g. X), and comprises a third sensor and a fourth sensor (e.g. S3, S4; S5, S6) spaced apart in a second direction (e.g. Y), wherein each of the four sensors is capable of measuring at least one magnetic field component.

[0162] In embodiments, the plurality of magnetic sensors comprises magnetic sensor elements selected from the group consisting of horizontal Hall elements or vertical Hall elements.

[0163] In embodiments, the plurality of magnetic sensors comprises magnetic sensor elements that are horizontal Hall elements.

[0164] In embodiments, the plurality of magnetic sensors comprises magnetic sensor elements that are vertical Hall elements.

[0165] In embodiments according to any of the first, second, third, fourth or fifth aspect, the sensor device comprises at least one CMOS substrate. (i.e. a semiconductor substrate produced with CMOS-compatible processes).

[0166] Particular and preferred aspects of the present application are set out in the appended independent claims and dependent claims. The features of the dependent claims may, of course, be combined with the features of the independent claims and other dependent claims in any appropriate manner not merely the manner explicitly set out in the claims.

[0167] These and other aspects of the present application will be apparent from the following description, along with the accompanying figures and claims, and will be supported by the following embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0168] Figure 1 is a schematic representation of a magnetic position sensor system comprising a magnet pivotable relative to a sensor device having two degrees of freedom.

[0169] Figure 2 shows the free orientation of a line segment [CP] which can be represented by two angles (e.g. ψ and or a and β).

[0170] Figure 3Ais a schematic block diagram of a sensor structure that can be used in embodiments of the present application. The sensor structure comprises two magnetic sensors spaced apart along the X-axis by a predefined distance Δx, each magnetic sensor comprising an integrated magnetic concentrator (IMC) and two horizontal Hall elements located on the X-axis.

[0171] Figure 3B shows a variant of the sensor structure of Figure 3A and can be used in embodiments of the present application.

[0172] Figure 4A is a schematic block diagram of a sensor structure that can be used in embodiments of the present application. The sensor structure comprises a disc-shaped integrated magnetic concentrator (IMC) and four horizontal Hall elements spaced apart at angles that are multiples of 90° at the outer periphery of the disc. Such a sensor structure is capable of measuring 3 orthogonal magnetic field components, also referred to as "3D magnetic pixel".

[0173] Figure 4B shows a variant of the sensor structure of Figure 4A and can be used in embodiments of the present application.

[0174] Figure 5 is a schematic block diagram of another sensor structure that can be used in embodiments of the present application. Such a sensor structure comprises a horizontal Hall element and four vertical Hall elements arranged near the outer periphery of the horizontal Hall element. Such a sensor structure is also capable of measuring 3 orthogonal magnetic field components and is therefore also referred to as "3D magnetic pixel".

[0175] Figure 6A is a schematic representation of a cylindrical magnet whose axis is substantially parallel to the semiconductor substrate when the magnet is in its "rest position" or "neutral position" (at which position ψ = 0° and ). Figure 6A and Figure 6B also give an impression of the magnetic field lines passing at the first sensor position S1 and the second sensor position S2 for ψ = 0° Figure 6A and for ψ = 30° Figure 6B .

[0176] Figure 7A shows an enlarged 3D perspective view of a sensor system like the one shown in Figure 6A without magnetic field lines. Figure 7B shows simulation results illustrating how the magnetic field gradient dBx / dx changes as a function of ψ for different values of dx. Figure 7C shows simulation results illustrating how the magnetic field difference ΔBz or the magnetic field gradient dBz / dx changes as a function of ψ for different values of dx.

[0177] Figure 8A (top) shows a side view in X-direction of the sensor system as shown in Figure 6A (bottom) shows a top view on the semiconductor substrate when the magnet is in its "neutral position". The impression of the magnetic field vectors at several locations in the substrate is shown (not necessarily all are sensed by the magnetic sensors). Figure 8A Figure 6A (bottom) shows a top view on the semiconductor substrate when the magnet is tilted by

[0178] Figure 8B (top) shows a side view in X-direction of the sensor system as shown in Figure 6B (bottom) shows a top view on the semiconductor substrate when the magnet is in its "neutral position". The impression of the magnetic field vectors at several locations in the substrate is shown (not necessarily all are sensed by the magnetic sensors). Figure 8B (bottom) shows a top view on the semiconductor substrate when the magnet is tilted by Figure 6B (bottom) shows a top view on the semiconductor substrate when the magnet is tilted by

[0179] Figure 9A shows a zoomed 3D perspective view of a sensor system like the one shown in Figure 8A shows simulation results illustrating how the magnetic field gradient dBz / dx changes as a function of Figure 9B for different dx values. shows simulation results illustrating how the magnetic field gradient dBz / dx changes as a function of Figure 9C for different dx values.

[0180] Figure 10A is a schematic representation of a sensor arrangement (referred to as "dual disk") that can be used in embodiments of the invention, e.g. in the sensor device of Figure 1 , and a set of formulas for determining the orientation of the magnet from ΔBx12 (or dBx / dx) for determining the first angle ψ and from ΔBy12 (or dBy / dx) for determining the second angle .

[0181] Figure 10B to Figure 10D shows several variants of the sensor system as shown in Figure 10A to illustrate that the two disks do not necessarily have to be located near the corners of the semiconductor substrate, and to show that the orientation of the Hall plates can be rotated with respect to the semiconductor substrate.

[0182] Figure 11 is a schematic representation of another sensor arrangement that can be used in embodiments of the invention, comprising two 3D magnetic pixels, each having a horizontal Hall element and four vertical Hall elements.

[0183] Figure 12 shows a sensor system as shown in Figure 11 ​​​A variant of , comprising two 2D magnetic pixels and further comprising a temperature sensor.

[0184] Figure 13 Shows the examples that can be used in embodiments of the present invention. Figure 11 Another variation of comprises two 2D magnetic pixels and a 3D magnetic pixel between them.

[0185] Figure 14A Show Figure 8A A variant of , with a qualitative impression of the magnetic field vector at five different positions.

[0186] Figure 14B Show Figure 8B A variant of , with a qualitative impression of the magnetic field vector at five different positions.

[0187] Figure 15 Show Figure 9A A magnified 3D perspective view of the .

[0188] Figure 16 It is possible in embodiments of the present invention (e.g. Figure 1 Schematic representation of the sensor arrangement used in the sensor device of FIG. 1 and a schematic ... ) to determine the orientation of the magnet. This sensor arrangement includes two 2D magnetic pixels on the X axis and two 1D magnetic pixels on the Y axis.

[0189] Figure 17 Shows the examples that can be used in embodiments of the present invention. Figure 16 A variant of , also including two 2D magnetic pixels on the X-axis and two 1D magnetic pixels on the Y-axis.

[0190] Figure 18 Shows the examples that can be used in embodiments of the present invention. Figure 16 A variant of this, comprising four 2D magnetic pixels.

[0191] Figure 19 Shows the examples that can be used in embodiments of the present invention. Figure 16 A variant of , comprising four 1D magnetic pixels and optionally a temperature sensor.

[0192] Figure 20 Shows the examples that can be used in embodiments of the present invention. Figure 16 Another variation of comprises four 1D magnetic pixels and a 3D magnetic pixel between them.

[0193] Figure 21 Shows the examples that can be used in embodiments of the present invention. Figure 16a variant of FIG. 1, including five 2D magnetic pixels.

[0194] Figure 22A shows the same information as Figure 8A .

[0195] Figure 22B is Figure 8B a variant of FIG. 1, and gives an impression of the magnetic field vectors at sensor positions S5, S6 located on a line YY parallel to Y but offset from Y by a distance dxx>0.

[0196] Figure 23A is Figure 15 a variant of FIG. 1, and a 3D perspective view of the special case where dxx= (dx / 2), so that line YY passes through S2. Figure 22B

[0197] Figure 23B shows simulation results illustrating how the magnetic field gradient dBz / dx varies as a function of .

[0198] Figure 23C shows simulation results illustrating how the magnetic field difference measured at sensor positions S5, S6 (or the gradient dBz / dy at the position offset from C) varies as a function of .

[0199] Figure 24A is a schematic representation of a sensor arrangement that can be used in embodiments of the invention, using the four sensor positions S1, S2, S5, S6 shown in Figure 23A , and shows a set of equations for determining the orientation of the magnet from ΔBx12 (or dBx / dx) for determining the first angle ψ and from ΔBx56 (or dBz / dy at the position offset from C) for determining the second angle .

[0200] Figure 24B to Figure 24D shows several variants of Figure 24A to illustrate that the two IMC disks do not have to be located near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plates can be rotated with respect to the semiconductor substrate.

[0201] Figure 25 shows a variant of Figure 24A that can be used in embodiments of the invention, including two 2D magnetic pixels on the X axis and four horizontal Hall elements located on a virtual square.

[0202] Figure 26 shows a variant of Figure 24A ​Another variant of the sensor device of Figure 1 comprises two vertical Hall elements on the X axis and four horizontal Hall elements on the virtual square. Such a sensor device further comprises a temperature sensor.

[0203] Figure 27 An electrical diagram showing a circuit that can be used in embodiments of the application is shown in Figure 6. Figure 24A Another variant of the sensor device of Figure 1 comprises two vertical Hall elements on the X axis and four horizontal Hall elements on the virtual square. Such a sensor device further comprises a temperature sensor.

[0204] Figure 28 An electrical diagram showing a circuit that can be used in embodiments of the application is shown in Figure 6.

[0205] The drawings are merely schematic and are non-limiting. In the drawings, the size of some of the elements can be exaggerated and not drawn on scale for illustrative purposes. Any reference signs in the claims should not be construed as limiting the scope. The same reference signs in different drawings denote the same or similar elements. DETAILED DESCRIPTION

[0206] The application will be described with respect to particular embodiments and with reference to certain drawings but the application is not limited thereto but only by the claims.

[0207] The terms first, second, etc. in the description and in the claims are used for distinguishing between similar elements and not necessarily for describing a temporal or spatial order. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the application described herein are capable of operating in other sequences than described or illustrated herein.

[0208] The terms top, under and the like in the description and in the claims are used for descriptive purposes and not necessarily for describing relative positions. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the application described herein are capable of operating in other orientations than described or illustrated herein.

[0209] It is to be noticed that the term "comprising", used in the claims, should not be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. It is thus to be interpreted that the term "comprising" means "consisting at least of the stated features, integers, steps or components" as referred to in the claims. Therefore, the scope of the expression "a device comprising means A and B" should not be limited to devices consisting only of components A and B. It means that with respect to the present application, the only relevant components of the device are A and B.

[0210] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment, however. Furthermore, the particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0211] Similarly, it is to be appreciated that, wherever the description herein refers to a process, several embodiments of this application can be practiced by using one or more aspects of the described process, and that every process period incarnation of such an embodiment is contemplated, even if such an incarnation is not one that is explicitly described. Still further, where a process is described herein in terms of the performing of several operations by, with, or between various things, such a process could be practiced by using one or more aspects of the described process and that every process incarnation carrying out production of the produce is contemplated, even if such an incarnation is not one that is explicitly described.

[0212] Moreover, although some embodiments described herein include some features included in other embodiments but not others, combinations of features of different embodiments are intended to fall within the scope of the application, and form different embodiments, as would be understood by those skilled in the art. For example, in the appended claims, any of the claimed embodiments can be used in any combination.

[0213] In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application can be practiced without these specific details. In other instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.

[0214] In this document, the term "magnetic sensor device" or "sensor device" refers to a device comprising at least one "magnetic sensor" or at least one magnetic "sensor element", preferably integrated in a semiconductor substrate. The sensor device can be comprised in a package, also referred to as "chip", but this is not absolutely necessary.

[0215] In this document, the terms "sensor element" or "magnetic sensor element" or "magnetic sensor" can refer to an assembly or a set of assemblies or sub-circuits or structures capable of measuring a magnetic quantity, such as, for example, a magnetoresistive (MR) element, a GMR element, an XMR element, a horizontal Hall plate, a vertical Hall plate, a Wheatstone bridge comprising at least one, but preferably four, magnetoresistive elements, etc. or a combination thereof.

[0216] In embodiments of the invention, the terms "magnetic sensor" or "magnetic sensor structure" can refer to an arrangement comprising one or more integrated magnetic concentrators (IMC) (also referred to as integrated magnetic flux concentrators) and one or more horizontal Hall elements arranged near the outer periphery of the IMC, for example a disc-shaped IMC with four horizontal Hall elements angularly spaced by a multiple of 90°.

[0217] In this document, the expressions "2D magnetic sensor" or "2D magnetic pixel" have the same meaning.

[0218] In this document, the expressions "3D magnetic sensor" or "3D magnetic pixel" have the same meaning.

[0219] In this document, the expressions "in-plane component of the magnetic field vector" and "projection of the magnetic field vector in the sensor plane" have the same meaning. If the sensor device is or comprises a semiconductor substrate, this also means "magnetic field component parallel to the semiconductor plane". These components can be labeled Bx, By.

[0220] In this document, the expressions "out-of-plane component of the magnetic field vector" and "Z component of the vector" and "projection of the vector on an axis normal to the sensor plane" have the same meaning. This component can be labeled Bz.

[0221] Embodiments of the invention typically use an orthogonal coordinate system fixed to the sensor device and having three axes X, Y, Z, with the X and Y axes parallel to the substrate and the Z axis normal to the substrate.

[0222] In this document, the expressions "spatial derivative" or "derivative" or "spatial gradient" or "gradient" are used as synonyms. If the order of the derivative is not explicitly mentioned, this means a first order gradient, unless it is clear from the context that this is not the case. In the context of the invention, a gradient is typically determined as the difference between two values measured at two locations spaced apart along a certain direction. In theory, the gradient is usually calculated as the difference between two values divided by the distance between the sensor locations (e.g. dx), but in practice, the division by the distance is usually omitted, as the measured signal needs to be scaled anyway. Therefore, in the context of the invention, the expressions "magnetic field difference" and "magnetic field gradient" can be used interchangeably.

[0223] In this application, horizontal Hall plates are typically referred to by H1, H2, etc., signals from horizontal Hall plates are typically referred to by h1, h2, etc., vertical Hall plates are typically referred to by V1, V2, etc., and signals from vertical Hall plates are typically referred to by v1, v2, etc.

[0224] In the context of the present invention, the formulas arctan(x / y), atan2(x,y), arccot(y / x) are considered equivalent.

[0225] The function atan2() is the two-argument arctangent function. The function sqr() is the square function. The function sqrt(.) is the square root function.

[0226] The function atan2 is the two-argument arctangent function, which is known in the art.

[0227] Unless it is clear from the context otherwise, Δx and dx have the same meaning in this document.

[0228] In this document, S1 can mean the first sensor position or the first magnetic sensor, depending on the context. The same is true for S2, S3, S4, S5, S6. In the context of the present invention, S1 and S2 are located on the X-axis; S3 and S4 are located on the Y-axis, which is perpendicular to the X-axis and passes through the point C which is between S1 and S2; and S5 and S6 are located on the YY-axis, which is perpendicular to the X-axis but is offset from the Y-axis by a distance dx>0. The distance dx can be greater than (dx / 2), equal to (dx / 2) or less than (dx / 2). The distance between S3 and S4 and the distance between S5 and S6 can be indicated by “dy”. The value of dy can be greater than dx, equal to dx or less than dx.

[0229] The present invention relates to a magnetic position sensor device and system for measuring the orientation of a magnet pivotable around a fixed reference point “Pref (Preference)”. This fixed reference point can be located on a semiconductor substrate, or can be located at a predefined distance above or below a semiconductor substrate. In the figures of the present invention, the fixed reference point Pref is typically shown as being located in the semiconductor substrate (and coinciding with the point C which is between the first sensor position S1 and the second sensor position S2) for illustrative purposes, but it is explicitly pointed out that the present invention is not limited thereto.

[0230] It is further noted that mechanical assemblies configured to allow such a magnet to move are known in the art and do not need to be described in detail here.

[0231] In preferred embodiments, the system has one or more or all of the following characteristics: good or improved accuracy, low or reduced sensitivity to temperature variations, low or reduced sensitivity to installation tolerances, low or reduced sensitivity to magnet demagnetization, low or reduced sensitivity to external interfering fields, and preferably all of these characteristics.

[0232] Refer to the attached drawings.

[0233] Figure 1 is a schematic representation of a magnetic position sensor system 100 comprising a two-pole magnet 101 and a sensor device 102 .

[0234] The sensor device 102 includes a semiconductor substrate ( Figure 1 ). A coordinate system having three orthogonal axes X, Y, Z is associated to the semiconductor substrate such that axes X and Y are parallel to the semiconductor substrate and axis Z is orthogonal to the semiconductor substrate.

[0235] The magnet is movable relative to the sensor device 102 such that the center (P) of the magnet is pivotable about a reference point (Pref) having a predefined position relative to the semiconductor substrate. The sensor device 102 includes a semiconductor substrate, such as a silicon substrate produced via a CMOS-compatible process. The reference point Pref can be located in the plane of the semiconductor substrate, above the semiconductor substrate, or below the semiconductor substrate, but to avoid complicating the drawing, the reference point is shown as being located in the semiconductor substrate and coinciding with point "C."

[0236] Figure 1 The magnet 101 shown in FIG. 1 is a two-pole magnet having a cylindrical shape, but other shapes may be used, for example, the magnet may be a two-pole bar magnet or a two-pole spherical magnet. When the magnet 101 is in its "neutral position" (i.e., when the center of the magnet P is directly above point C), the magnet is magnetized along an axis oriented parallel to the semiconductor substrate. The distance between the magnet 101 and the reference point "Pref" is constant, and the system has two degrees of freedom. The task of the sensor device 102 is to determine the orientation of the magnet 101.

[0237] For example, two angles can be used and ψ to uniquely define the orientation, where is a negative or positive angle relative to the Z axis of the orthogonal projection of the line segment [CP] in the YZ plane, and ψ is a negative or positive angle relative to the Z axis of the orthogonal projection of the line segment [CP] in the XZ plane. When the magnet is in the "neutral position", and ψ=0°. The magnet is preferably at least from a range of -30° to +30° and ψ from a range of -30° to +30°, but of course also smaller or larger ranges are envisaged. By means of and ψ to specify the orientation is not the only possible way.

[0238] Figure 2 Another way of defining the orientation of a constant length vector [CP] having its start in the reference point "C" and its end in a point "P" on the imaginary sphere is shown. The vector [CP] is not shown, but a first orthogonal projection [CA] of the vector [CP] onto the plane XZ, and a second orthogonal projection [CB] of the vector [CP] onto the plane YZ are shown. The position of the magnet can also be defined by a first angle a between the positive X-axis and the vector [CA], and by a second angle β between the positive Y-axis and the vector [CB]. As an example, if the magnet axis is oriented perpendicular to the plane XY, i.e. perpendicular to the semiconductor substrate, also referred to as "neutral position", then a = 90° and β = 90°. This corresponds to the orientation described above with and ψ = 0°.

[0239] The following equations apply:

[0240] Bx = B*cos(a)*sin(β) [1]

[0241] By = B*cos(β)*sin(a) [2]

[0242] Bz = B*sin(β)*sin(a) [3]

[0243] Division of [3] and [1] gives:

[0244] (Bz / Bx) = tan(a) [4]

[0245] (Bz / By) = tan(β) [5]

[0246] where Bx is the magnetic field component oriented in the X-direction, By is the magnetic field component oriented in the Y-direction, Bz is the magnetic field component oriented in the Z-direction, and B is the magnitude of the magnetic field vector. From this, by measuring Bx, By, Bz at a reference point Pref, the angles a and β can be calculated, but such a solution is very sensitive to external influences and / or aging effects, e.g. to temperature variations, mounting tolerances, demagnetization of the magnet, external interference fields, etc.

[0247] In a preferred embodiment, the angles a and β are values in the range of 90° ± 30°, or in the range of 90° ± 40°, or in the range of 90° ± 50°, or in the range of 90° ± 60°.

[0248] Figure 3A is a schematic block diagram of a sensor structure that can be used in embodiments of the present invention. The sensor structure includes two magnetic sensors S1 and S2, which are spaced apart by a predefined distance Δx along the X-axis. Each magnetic sensor includes an integrated magnetic concentrator (IMC) and two horizontal Hall elements located on the X-axis.

[0249] Formulas are provided to calculate the two orthogonal magnetic field components Bx1, Bz1, Bx2, Bz2 from the sensor signals h1, h2, h3, h4 provided by the horizontal Hall elements H1, H2, H3, H4, respectively. Note that in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner, but the scaling factors are omitted here to maintain simplicity of explanation.

[0250] From the component values ​​Bx1 and Bx2, the magnetic field difference ΔBx12 = (Bx2 - Bx1) or the magnetic field gradient dBx / dx can be derived. From the component values ​​Bz1 and Bz2, the magnetic field difference ΔBz12 = (Bz2 - Bz1) or the magnetic field gradient dBz / dx can be derived. The gradient is highly insensitive to external magnetic interference fields. Note that the division by the distance dx is typically omitted because the signal needs to be scaled anyway. However, the symbol dBz / dx is convenient to use because it makes it clear that the component Bz (oriented in the Z direction) is measured at two positions separated by the distance dx in the X direction. Therefore, the gradient dBz / dx is called the "magnetic field gradient of the Bz component along the X direction."

[0251] In an embodiment of the present invention, the value of dx may be a value in the range of 1.0 mm to 3.0 mm or 1.5 mm to 2.5 mm. The IMC may have a disk shape with a diameter in the range of 150 μm to 250 μm (e.g., in the range of 170 μm to 230 μm, for example, equal to about 200 μm). The horizontal Hall element may have a substantially square shape with a length and width in the range of about 15 μm to about 25 μm.

[0252] Figure 3B Shows the examples that can be used in the embodiments of the present invention. Figure 3A A variation of the sensor structure in which the Hall element is located relative to Figure 3A The Hall elements are rotated 45°. The same formula applies.

[0253] Figure 4Ais a schematic block diagram of a sensor structure 300 that can be used in embodiments of the present invention. The sensor structure comprises a disc-shaped integrated magnetic concentrator IMC, and four horizontal Hall elements H1 to H4 that are angularly spaced at multiples of 90° at the outer periphery of the disc. Such a sensor structure is capable of measuring 3 orthogonal magnetic field components at the center of the IMC disc, also referred to as a "3D magnetic pixel". Formulas are provided to compute the three orthogonal magnetic field components Bx, By, Bz from sensor signals h1, h2, h3, h4 provided by horizontal Hall elements H1, H2, H3, H4, respectively. Note that in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner, but the scaling factors are omitted here to keep the explanation simple.

[0254] Figure 4B shows a variant of the sensor structure of Figure 4A , wherein the Hall elements are rotated by 45° with respect to those of Figure 4A . The same formulas apply.

[0255] Figure 5 is a schematic block diagram of another sensor structure that can be used in embodiments of the present invention. Such a sensor structure comprises a horizontal Hall element H1, and four vertical Hall elements V1 to V4 that are arranged near the outer periphery of the horizontal Hall element. Such a sensor structure is also capable of measuring 3 orthogonal magnetic field components Bx, By, Bz at the center of H1, hence also referred to as a "3D magnetic pixel". Formulas are provided to compute the three orthogonal magnetic field components Bx, By, Bz from sensor signals h1 provided by horizontal Hall element H1, and sensor signals v1, v2, v3, v4 provided by vertical Hall elements V1, V2, V3, V4, respectively. Note that in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner, but the scaling factors are omitted here to keep the explanation simple.

[0256] Note that the use of four vertical Hall elements in order to measure Bx and By is not absolutely necessary, but a more accurate result can be obtained by summing or averaging the signals (v1 and v3) to compute Bx, and by summing or averaging the signals (v2 and v4) to compute By.

[0257] Figure 6A is a schematic representation of a cylindrical magnet 601, which has an axis oriented substantially parallel to a semiconductor substrate 603 when the magnet is in its "rest position" or "neutral position" (at which position ψ = 0° and ).

[0258] Figure 6AAn impression of the magnetic field lines at the first sensor position S1 and at the second sensor position S2 is also given, these sensor positions being indicated schematically by black dots. A point C is also indicated, which is in the middle between the two sensor positions S1, S2. In some embodiments of the invention, there is also a magnetic sensor located at the point C, but this is not absolutely necessary. When the magnet 601 is at its neutral position (as illustrated in Figure 6A , the line segment [CP] is oriented perpendicular to the substrate, whereby the orthogonal projection of the center P of the magnet onto the substrate 603 coincides with the point C.

[0259] Figure 6B An impression of the magnetic field lines at the first sensor position S1 and at the second sensor position S2 is given when the magnet is rotated in the XZ plane such that the line segment [CP] forms an angle of about 30° with the X axis. By comparing Figure 6A and Figure 6B it can be appreciated that the magnetic flux lines at S1 and S2 vary as a function of ψ (or a), but it is impossible for an average person to predict what this function looks like.

[0260] Figure 7A A zoomed 3D perspective view of a sensor system like the one illustrated in Figure 6A is shown, but without the magnetic field lines.

[0261] For a cylindrical magnet 701 having a diameter of 4.0 mm and a height of 4.0 mm, located at such a distance "g" between the substrate and the magnet that g = 3.0 mm, computer simulations were performed for various distances dx between the two sensor positions S1, S2 (i.e. for dx = 1.1 mm, dx = 1.6 mm, and dx = 2.2 mm), to determine how the magnetic field difference ΔΒχ12 = (Βχ2 - Βχ1) (also referred to as dBx / dx) varies as a function of ψ. The results are illustrated in Figure 7B .

[0262] Thus, by storing such a relation for a particular dx value in the sensor device, and by measuring the values of Bx1 and Bx2, the angle ψ can be determined. Such a relation can be stored in a non-volatile memory in any suitable manner, e.g. by means of a mathematical formula or a look-up table. Such a solution, in which ψ is determined based on dBx / dx only, works well in environments where the temperature is relatively constant. Thus, for certain applications, such a solution is sufficiently accurate.

[0263] In applications where a higher accuracy is required, for example in industrial or robot or automotive applications, some kind of correction can be needed to make the result less dependent on temperature variations, and / or less dependent on mounting tolerances (e.g. larger or smaller "g" values), and / or less dependent on aging effects such as demagnetization. Several solutions will be described, for example using a second gradient dBz / dx, or using a correction value D1 depending on temperature, or using a correction value D2 indicative of the norm of the magnetic field, or using a correction value D3 indicative of the norm of the gradient field, or using a correction value D4 based on one or more second order gradients.

[0264] Figure 7C Analog results are shown which illustrate how the magnetic field difference ΔBz12 = Bz2 - Bz1 or the magnetic field gradient dBz / dx varies as a function of ψ for different dx values. Solutions based on both dBx / dx and dBz / dx will be described in further detail (see for example Figure 10A ), but other solutions are provided as well (see for example Figure 11 to Figure 13 ).

[0265] So, the first angle ψ can be determined based on dBx / dx, but the inventors also needed to find a solution for determining .

[0266] To the inventors' knowledge, Figure 8A and Figure 8B are not known in the art, but are based on the inventors' conceiving.

[0267] Figure 8A (top) shows a side view (in X direction) of Figure 6A , and

[0268] Figure 8A (bottom) shows a top view on the semiconductor substrate of when the magnet 801 is in its "neutral position" (i.e. ψ = 0° and Figure 6A . A quantitative impression of the magnetic field vectors measured at several positions S1, S2, C on the substrate is also shown (if suitable sensors are present at these positions).

[0269] Figure 8B (top) shows a side view (in X direction) of Figure 6B , and

[0270] Figure 8B (bottom) shows a top view on the semiconductor substrate of when the magnet is tilted Figure 6B in the YZ plane. A quantitative impression of the magnetic field vectors measured at said positions S1, S2, C is also shown.

[0271] The inventors surprisingly found that the magnetic field vectors at S1 and S2 also follow The inventors were particularly surprised that it was possible to measure the angle using only two sensors located on line X. It is possible. It is highly counterintuitive.

[0272] where the angle is derived from By1 and By2 (or more specifically, from (By2-By1) or dBy / dx) The solution will be in Figure 9A to Figure 13 Further described in .

[0273] Figure 9A Shown Figure 8A , without showing the magnetic field lines. The semiconductor substrate 903 comprises two 3D magnetic pixels, each of which is capable of measuring three orthogonal magnetic field components.

[0274] For a cylindrical magnet 901 having a diameter of 4.0 mm and a height of 4.0 mm, situated such that the distance "g" between the substrate and the magnet is 3.0 mm, computer simulations were performed to determine how the magnetic field gradient ΔBy12 = (By2 - By1) (also referred to as dBy / dx) would change according to the values ​​of the magnetic field gradient ΔBy12 = (By2 - By1) and ... and the magnetic field gradient ΔBy12 = (By2 - By1) and the magnetic field gradient ΔBy12 = (By2 - By1 The result is Figure 9B Shown in.

[0275] Thus, by storing this relationship for a particular dx value in the sensor device, and by measuring the values ​​of By1 and By2, the angle can be determined. This relationship can be stored in non-volatile memory in any suitable manner, such as by means of a mathematical formula or a lookup table. Based solely on dBy / dx determinations) works well in environments where the temperature is relatively constant. Therefore, for some applications, such solutions are sufficiently accurate.

[0276] In applications where higher accuracy is required, for example in industrial or robotic or automotive applications, Some kind of correction may also be needed. Again, several solutions will be described, such as using a second gradient dBz / dx (which depends on ψ), or using a correction value D1 that is temperature-dependent, or using a correction value D2 that indicates the norm of the magnetic field, or using a correction value D3 that indicates the norm of the gradient field, or using a correction value D4 that is based on one or more second-order gradients.

[0277] Figure 9C is Figure 7C a copy. Solutions based on both dBy / dx and dBz / dx will be described in further detail (see e.g. Figure 10A ), but other solutions are provided as well (see e.g. Figure 11 to Figure 13 ).

[0278] Hereby, a first angle ψ can be determined based on dBx / dx, and a second angle may be determined based on dBy / dx. Embodiments of the invention based on this principle will be described in Figure 10A to Figure 13 .

[0279] Figure 10A is a schematic representation of a sensor arrangement (also referred to as "double disc") that can be used in embodiments of the invention, e.g. in the sensor device of Figure 1 , and shows a set of formulas for determining the orientation of the magnet from ΔBx12 (or dBx / dx) for determining the first angle ψ and from ΔBy12 (or dBy / dx) for determining the second angle .

[0280] Figure 10B , Figure 10C and Figure 10D show several variants of Figure 10A to illustrate that the semiconductor substrate does not need to have a square shape, and that the two IMC discs do not have to be located near the corners of the semiconductor substrate, and to illustrate that the orientation of the Hall plates can be rotated with respect to the semiconductor substrate. The same formulas mentioned in Figure 10A can be applied.

[0281] Figure 11 schematic representation of a sensor arrangement 1103 that can be considered as a variant of the sensor arrangement of Figure 10A .

[0282] The sensor arrangement 1103 comprises two 3D magnetic pixels, each having a horizontal Hall element and four vertical Hall elements. Formulas for determining the first angle ψ and the second angle are provided.

[0283] In a variant (not shown) of Figure 11 , some of the vertical Hall elements are omitted. For example, V2 and V4 can be omitted from S1, and V5 and V8 can be omitted from S2, and the following formulas can be used: Bx1 = v1; By1 = v3; Bx2 = v6; By2 = v7.

[0284] with Figure 10A to Figure 10DThe same remarks described above in relation with the position and orientation of the sensors with respect to the semiconductor substrate, and the size and shape of the substrate, apply mutatis mutandis.

[0285] Figure 12 Another variant of the sensor arrangement of Figure 11 includes two 2D magnetic pixels, and optionally further includes a temperature sensor. In this embodiment, sensors S1 and S2 are not able to measure Bz1 and Bz2, so the sensor device is not able to determine dBz / dx.

[0286] The temperature of the magnet can be measured using a temperature sensor (e.g. a thermocouple, a thermistor or a temperature dependent resistance) mounted to the magnet and electrically connected to the sensor device, or the temperature of the magnet can be estimated using a temperature sensor “T” comprised in the sensor device (e.g. embedded in the semiconductor substrate).

[0287] If no temperature sensor is present, the first angle ψ can be determined based on dBx / dx, and the second angle can be determined based on dBy / dx, using such a sensor arrangement.

[0288] If a temperature sensor is present, the temperature can be measured, e.g. the temperature of the magnet or the temperature of the semiconductor substrate; and a correction value D1 can be determined as a predefined function of the measured temperature; and the first angle ψ can be calculated based on dBx / dx and based on the value D1, e.g. according to the ratio of dBx / dx and D1, e.g. the first angle ψ is calculated as the arcsine function of said ratio; and the second angle can be calculated based on dBy / dx and based on the value D1, e.g. according to the ratio of dBy / dx and D1, e.g. the second angle is calculated as the arcsine function of said ratio.

[0289] Figure 13 Another semiconductor substrate 1303 is shown, which has a sensor arrangement which can be considered as another variant of Figure 11 or as a variant of Figure 12 .

[0290] Figure 13 The sensor arrangement of includes two 2D magnetic pixels spaced apart by a distance dx along the X direction, and a 3D magnetic pixel in between. The 2D magnetic pixels are each configured for measuring Bx and By components. The 3D sensor is configured for measuring three orthogonal magnetic field components Bxc, Byc, Bzc.

[0291] The norm of the magnetic field at point C can be determined using the magnetic field components measured by the 3D sensor, and this norm can be used to correct the first gradient dBx / dx and the second gradient dBy / dx. A correction value D2 can be computed as the sum of the squares of two or three of these magnetic field components, for example as D2 = Bxc 2 + Byc 2 + Bzc 2 .

[0292] The first angle ψ can be determined from dBx / dx with or without the correction value D2, for example from dBx / dx and √D2, for example from the ratio of dBx / dx and √D2, for example as the arcsine of said ratio.

[0293] The second angle may be determined from dBy / dx with or without the correction value D2, for example from dBy / dx and √D2, for example from the ratio of dBy / dx and √D2, for example as the arcsine of said ratio.

[0294] In a certain variant, D2 is computed as Bxc 2 + Byc 2 and the vertical Hall elements V11 and V12 can be omitted. In another variant, the 3D magnetic pixel Sc has an IMC and two horizontal Hall elements for measuring Bxc and Bzc.

[0295] In a certain variant, the sensor Sc has an IMC and four horizontal Hall elements.

[0296] In a certain variant, the sensors S1 and S2 each have an IMC and two or four horizontal Hall elements, and the sensor Sc has an IMC and two or four horizontal Hall elements.

[0297] In a variant of any of Figure 7A to Figure 13 , another correction factor D3 is determined based on the norm of one or more first order gradients selected from dBx / dx, dBy / dx and dBz / dx. Depending on which gradient is used, the sensors S1, S2 can be 2D sensors or 3D sensors, and no magnetic sensor is required at point C. More specifically, in an example, D3 is computed as (dBx / dx) 2 + (dBy / dx) 2 + (dBz / dx) 2 , or as (dBy / dx) 2 + (dBz / dx) 2 , or as (dBx / dx) 2 + (dBz / dx)2 and pixels S1 and S2 are 3D magnetic pixels. In another example, D3 is computed as (dBx / dx) 2 +(dBy / dx) 2 and pixels S1 and S2 can be 2D pixels (e.g., as in Figure 12 ) or 3D pixels. In all these cases, the first angle ψ can be determined from dBx / dx and the correction value D3, e.g., from dBx / dx and VD3, e.g., from the ratio of dBx / dx and VD3; and the second angle can be determined from dBy / dx and the correction value D3, e.g., from dBy / dx and VD3, e.g., from the ratio of dBy / dx and VD3.

[0298] In a variant of Figure 7A to Figure 13 , there is also a magnetic sensor at point C, and another correction factor D4 is determined based on the norm of one or more second order gradients selected from d2Bx / dx2, d2By / dx2, and d2Bz / dx2. Depending on which second order gradient is used, sensors S1, S2, Sc can be 2D sensors or 3D sensors. More specifically, in an example, D4 is computed as (d2Bx / dx2) 2 +(d2By / dx2) 2 +(d2Bz / dx2) 2 , or as (d2By / dx2) 2 +(d2Bz / dx2) 2 , or as (d2Bx / dx2) 2 +(d2Bz / dx2) 2 and pixels S1, S2, Sc are 3D magnetic pixels. In another example, D3 is computed as (d2Bx / dx2) 2 +(d2By / dx2) 2 and pixels S1, S2, Sc can be 2D pixels or 3D pixels. In all these cases, d2Bx / dx2may be computed as (Bx2- Bxc) - (Bxc- Bx1), and d2By / dy2may be computed as (By2- Byc) - (Byc- By1), and d2Bz / dx2may be computed as (Bz2- Bzc) - (Bzc- Bz1), and the first angle ψ can be determined from dBx / dx and the correction value D4, e.g., from dBx / dx and VD4, e.g., from the ratio of dBx / dx and VD4; and the second angle can be determined from dBy / dx and the correction value D4, e.g., from dBy / dx and VD4, e.g., from the ratio of dBy / dx and VD4.

[0299] Return Reference Figure 8A and Figure 8B , the inventors also contemplate measuring the magnetic field at two other locations (referred to herein as S3 and S4) located on the Y axis, which is perpendicular to the X axis, and passing through a point C midway between S1 and S2. Sensors S3 and S4 are separated by a distance dy, which may be less than, equal to, or greater than the distance dx between S1 and S2. To the best of the inventors' knowledge, Figure 14A and Figure 14B It is not known in the art but is based on the inventor's conception.

[0300] Figure 14A Show Figure 8A and the bottom picture shows the magnet 1401 in its neutral position (ψ = 0°, ) gives a qualitative impression of the magnetic field vectors at five different positions C, S1, S2, S3, and S4.

[0301] Figure 14B Show Figure 8B The bottom picture shows the angle of the magnet 1401 when the point P is tilted relative to the Z axis in the YZ plane. It can be seen that the component Bx at S3 and S4 depends on ΔBy34 and The relationship between Figure 9B The relationship shown in is similar.

[0302] Figure 15 Show Figure 14A A magnified 3D perspective view of the .

[0303] Figure 16 to Figure 21 The embodiments and variants thereof are based on the same method as explained above (see for example Figure 7A to Figure 1 4) The idea of ​​determining the first angle ψ in the same way, that is, based only on ΔBx12, or based on ΔBx12 and ΔBz12, or based on ΔBx12 and a correction factor, such as D1 (related to temperature), D2 (related to the norm of the field component at point C), D3 (related to the norm of the first-order gradient at point C), and D4 (related to the norm of the second-order gradient at point C).

[0304] Figure 16 It is possible in embodiments of the present invention (e.g. Figure 1 Schematic representation of a sensor arrangement used in a sensor device of the invention and showing a first angle ψ determined by means of at least ΔBx12 (or dBx / dx) and a second angle determined by means of at least ΔBx34 (or dBx / dy) a set of equations to determine the orientation of the magnet.

[0305] Figure 16 The sensor arrangement 1603 comprises two 2D magnetic pixels S1, S2 on the X-axis (each capable of measuring Bx and Bz) and two 1 D magnetic pixels S3, S4 on the Y-axis (these are capable of measuring Bx).

[0306] The same provisos as described in Figure 10A to Figure 10D apply mutatis mutandis (e.g. with respect to the position and orientation of the sensors relative to the semiconductor substrate, and the size and shape of the substrate).

[0307] In the example of Figure 16 , dx is equal to dy, but this is not absolutely necessary and the application will work also in case dx is smaller or larger than dy.

[0308] Figure 17 A sensor arrangement 1703 is shown, which is a variant of Figure 16 , wherein the first and second sensors S1, S2 each comprise a horizontal Hall element for measuring the Bz component and at least one vertical Hall element arranged for measuring the Bx component.

[0309] Figure 18 A sensor arrangement 1803 is shown, which is another variant of Figure 16 , comprising four 2D magnetic pixels, each capable of measuring the Bx component and the By component.

[0310] The first angle ψ can be determined from ΔΒχ12, or from ΔΒχ12and ΔΒζ12(e.g. from the ratio of ΔΒχ12and ΔΒζ12), or from ΔΒχ12and ΔΒζ34(e.g. from the ratio of ΔΒχ12and ΔΒζ34); and the second angle may be determined from ΔΒχ34and ΔΒζ12(e.g. from the ratio of ΔΒχ34and ΔΒζ12), or from ΔΒχ34and ΔΒζ34(e.g. from the ratio of ΔΒχ34and ΔΒζ34).

[0311] Figure 19 A sensor arrangement 1903 is shown, which is another variant of Figure 16 , which can be used in embodiments of the application. Such a sensor arrangement comprises four 1 D magnetic pixels and optionally a temperature sensor.

[0312] If no temperature sensor is present, such a sensor arrangement can be used to determine the first angle ψ based on dBx / dx and the second angle based on dBx / dy Without compensation.

[0313] If a temperature sensor is present, the temperature can be measured, for example the temperature of the magnet or the temperature of the semiconductor substrate; and a correction value D1 can be determined as a predefined function of the measured temperature; and the first angle ψ can be calculated based on dBx / dx and based on the value D1, for example according to the ratio of dBx / dx and D1, for example as the arcsine function of said ratio; and the second angle for example according to the ratio of dBx / dy and D1, for example as the arcsine function of said ratio. for example as the arcsine function of said ratio. calculated as the arcsine function of said ratio.

[0314] Figure 20 A sensor arrangement 2003 is shown, which is another variant of Figure 16 Another variant of the sensor arrangement 2001, which can be used in embodiments of the application, comprises four 1 D magnetic pixels and a 3D magnetic pixel in between. The sensors S1 to S4 are capable of measuring the Bx component. The sensor Sc is capable of measuring Bxc, Byc, Bzc at point C. The sensor Sc can comprise a horizontal Hall element H3 and four vertical Hall elements V9 to V12 (not shown), or can comprise a horizontal Hall element and only two vertical Hall elements (e.g. V9 and V11).

[0315] The norm of the magnetic field at point C can be determined using the magnetic field components measured by the 3D sensor, and this norm can be used to correct the first gradient dBx / dx and the second gradient dBy / dx. A correction value D2 can be calculated as the sum of the squares of two or three of these magnetic field components, for example as D2 = Bxc 2 + Byc 2 + Bzc 2 .

[0316] The first angle ψ can be determined from dBx / dx with or without the correction value D2, for example from dBx / dx and √D2, for example according to the ratio of dBx / dx and √D2, for example as the arcsine function of said ratio.

[0317] The second angle may be determined from dBx / dy, with or without the use of a correction value D2, for example from dBx / dy and √D2, for example from the ratio of dBx / dy and √D2, for example as the inverse sine function of said ratio.

[0318] In a certain variant, D2 is calculated as the sum of two of the three components measured at point C, for example as Bxc 2 + Bzc 2 In this case V11 and V12 can be omitted; or as Bxc 2 + Byc 2 In this case H3 can be omitted; or as Byc 2 + Bzc 2 In this case V9 and V10 can be omitted.

[0319] In a certain variant, the 3D magnetic pixel Sc has an IMC and two horizontal Hall elements for measuring Bxc and Bzc, or an IMC and two horizontal Hall elements for measuring Byc and Bzc, or an IMC and four horizontal Hall elements.

[0320] In a certain variant, the sensors S1 and S2 each have an IMC and two or four horizontal Hall elements, and the sensor Sc has an IMC and two or four horizontal Hall elements.

[0321] Figure 21 A sensor arrangement 2103 is shown, which is a further variant of Figure 16 which can be used in embodiments of the application, comprising five 2D magnetic pixels. Figure 19 may also be seen as Figure 18 a further variant of

[0322] In this embodiment, the correction factor D4 is determined based on the norm of one or more second order gradients selected from d2Bx / dx2, d2Bx / dy2, d2Bz / dx2 and d2Bz / dy2, where d2Bx / dx2 = (Bx2 - 2*Bxc + Bx1), d2Bz / dx2 = (Bz2 - 2*Bzc + Bz1), d2Bx / dy2 = (Bx4 - 2*Bxc + Bx3), d2Bz / dy2 = (Bz4 - 2*Bzc + Bz3).

[0323] In an example, D4 is calculated as (d2Bx / dx2) 2 + (d2Bx / dy2) 2 + (d2Bz / dx2) 2+ (d2Bz / dy2) 2 and the first angle ψ can be determined from dBx / dx and a correction value D4, e.g. from dBx / dx and VD4, e.g. from the ratio of dBx / dx and VD4; and the second angle may be determined from dBx / dy and a correction value D4, e.g. from dBx / dy and VD4, e.g. from the ratio of dBx / dy and VD4.

[0324] In a certain variant, D4 is computed as the square sum of only two or only three of these terms.

[0325] Referring back to Figure 8A and Figure 8B , the inventors have also thought of measuring the magnetic field at two other locations (referred to herein as S5 and S6) which are located on an axis YY perpendicular to the X axis but offset from a point C which is at the middle between S1 and S2 by a distance dxx>0. The offset dxxmay be smaller than, equal to, or larger than (dx / 2). The sensors S5 and S6 are spaced apart by a distance dy which can be smaller than, equal to, or larger than the distance dx between S1 and S2. To the inventors' knowledge, Figure 22A and Figure 22B are not known in the art, but are based on the inventors' conceiving.

[0326] Figure 22A shows a variant of Figure 8A and the picture at the bottom gives a qualitative impression of the magnetic field vectors at the five different locations C, S1, S2, S5, S6 when the magnet 2201 is at its neutral position (ψ = 0°, ).

[0327] Figure 22B shows a variant of Figure 8B and the picture at the bottom gives a qualitative impression of the magnetic field vectors at these five locations when the point P of the magnet 2201 is tilted by an angle with respect to the Z axis in the YZ plane. It can be seen that the components By and Bz at S5 and S6 seem to depend on but it is impossible for the average person to predict how the relation between ΔBz56 and .

[0328] Figure 23A shows a zoomed-in 3D perspective view of Figure 22A without showing the magnetic field lines. The semiconductor substrate 2303 comprises four magnetic sensors at S1, S2, S5, S6, and optionally a fifth magnetic sensor at point C.

[0329] For a cylindrical magnet 2301 having a diameter of 4.0 mm and a height of 4.0 mm, seated at a distance "g" of 3.0 mm between the substrate and the magnet, computer simulations are performed for dx = 2.2 mm between the two sensor positions S1, S2 to determine how the magnetic field gradient ABz56 = (Bz5 - Bz6) (also referred to as dBz / dy) will vary as a function of .

[0330] The results are shown in Figure 23C .

[0331] In some embodiments of the application, the gradient ABz56 is corrected using the gradient ABz12 = (Bz1 - Bz2) shown in Figure 23B .

[0332] By storing these relationships in the sensor device, and by measuring the values of Bz5 and Bz6, the angle This relationship can be stored in the non-volatile memory in any suitable manner, for example by means of a mathematical formula or a look-up table. Such solutions (where the angle is determined based on Bz5, Bz6 only) work well in environments where the temperature is relatively constant. Thus, for certain applications, such solutions are sufficiently accurate.

[0333] In applications where a higher accuracy is required, for example in industrial or robotic or automotive applications, for some correction can be needed. Again, several solutions will be described, for example using the gradient ABz12 = (Bz1 - Bz2) available from S1 and S2, or using a correction value D1 as a function of temperature, or using a correction value D2 indicative of the norm of the magnetic field measured at position C, etc.

[0334] In the embodiments shown in Figure 24A to Figure 27 , the first angle ψ can be determined based on at least ABx12 = (Bx1 - Bx2), optionally corrected using ABz12 = (Bz1 - Bz2) or using a correction value D1 as a function of temperature or using a correction value D2 indicative of the norm of the magnetic field measured at point C; and the second angle can be determined based on at least ABz56 = (Bz5 - Bz6), optionally corrected using ABz12 or said correction value D1 or said correction value D2.

[0335] Figure 24A is that the angle ψ can be determined based on at least ABx12 = (Bx1 - Bx2), optionally corrected using ABz12 = (Bz1 - Bz2) or using a correction value D1 as a function of temperature or using a correction value D2 indicative of the norm of the magnetic field measured at point C; and the angle Figure 1Schematic representation of a sensor arrangement used in a sensor device of FIG. 1 and illustrating a method for determining a first angle ψ by means of at least a first angle ψ determined on the basis of ΔBx12 and a second angle ψ determined by means of at least a second angle ψ determined on the basis of ΔBz56 A set of formulas to determine the orientation of a magnet.

[0336] Figure 24A The sensor arrangement 2403 comprises two magnetic pixels S1, S2 located on the X axis (each magnetic pixel being capable of measuring at least Bx and preferably also Bz) and two 1D magnetic pixels S5, S6 located on an axis YY perpendicular to the X axis but offset from a point C located midway between S1 and S2.

[0337] exist Figure 24A In the example shown in FIG, the value of dx is equal to dy; and the value of dxx is equal to (dx / 2), but this is not necessary for the invention to work, and the value of dy may be chosen to be different from the value of dx, and the value of dxx may be chosen to be different from the value of (dx / 2) or (dy / 2), which is also shown in FIG. Figure 24B to Figure 24D Middle picture.

[0338] and Figure 10A to Figure 10D The same remarks described in (eg, regarding the position and orientation of the sensor relative to the semiconductor substrate, and the size and shape of the substrate) apply mutatis mutandis here.

[0339] Figure 24B 、 Figure 24C and Figure 24D Show Figure 24A to illustrate that the two IMC disks do not have to be located near the corners of the semiconductor substrate and to show that the orientation of the Hall plates can be rotated relative to the semiconductor substrate.

[0340] exist Figure 24A to Figure 24D In a variation of the present invention, each of the sensors S1, S2 includes a horizontal Hall element for measuring Bz and one or two vertical Hall elements arranged to measure Bx (e.g., as in Figure 11 or Figure 17 (pictured in the figure).

[0341] Notice, Figure 24A The drawings are not to scale, and in practice, all horizontal Hall elements H1 to H6 may have the same size.

[0342] Figure 25 A sensor arrangement 2503 is shown, which is Figure 24AA variant of the above, further comprising two horizontal Hall elements H7 and H8 located on a virtual line YYY, which is perpendicular to the X-axis and which is spaced from the point C by a distance dxxx larger than 0. The distance dxxx can be smaller than, equal to or larger than (dx / 2). Preferably, the values of dxxx and dxx are equal to (dx / 2), and preferably the value of dy is equal to dx, in which case, as shown, the four horizontal Hall elements H5, H6, H7, H8 are virtually square, with the point C at the center of the square and the sensors S1 and S2 on the side edges of the square.

[0343] The signal ABz12 = (Bz1 - Bz2) depends mainly on the first angle ψ.

[0344] The signal ABz56 = (Bz5 - Bz6) depends both on ψ and on and the signal ABz78 = (Bz7 - Bz8) depends both on ψ and on But the sum of the signals (ABz56 + ABz78) = (Bz5 - Bz6 + Bz7 - Bz8) depends less on ψ. In embodiments, this sum of signals can be used as a correction value.

[0345] It is also possible to use a weighted sum of the signals ABz56 and ABz78, e.g. according to the formula: ABz5-8 = (w1*ABz56) + (w2*ABz78), with w1, w2 being weight factors. These weight factors can be predefined values, or can be a predefined function of the value of ψ.

[0346] Figure 26 A sensor arrangement 2603 is shown, which is Figure 24A Another variant of the above, can be used in embodiments of the application. This sensor arrangement is very simple, in that it only comprises two vertical Hall elements V1, V2 located on the X-axis and two horizontal Hall elements H5, H6 located on the YY-axis. In the shown example, the sensor V2 is also located on the YY-axis, but as explained above, this is not absolutely necessary.

[0347] Optionally, the sensor arrangement 2603 further comprises a temperature sensor. In this case, the correction value D1 can be calculated from the measured temperature; and the first angle ψ can be determined based on ABx12 and the correction value D1, e.g. as the ratio of ABx12 and D1, e.g. as the inverse sine function of this ratio; and the second angle may be determined based on ABz56 and the correction value D1, or based on ABz56 and D1 and ψ.

[0348] In Figure 26In a variant (not shown) of the sensor arrangement 2603, the sensor arrangement 2603 can further comprise a 3D magnetic pixel at point C capable of measuring (Bxc, Byc, Bzc), or a 2D magnetic pixel at point C capable of measuring (Bxc, Bzc). The correction value D2 can be computed as the sum of the squares of these three values Bxc, Byc, Bzc, or as the sum of the squares of the two values Bxc, Bzc; and the first angle ψ can be computed from ΔBx12 and D2, for example from (ΔBx12 / V D2); and the second angle may be computed from ΔBz56 and D2, for example from (ΔBz56 / V D2).

[0349] Figure 27 A sensor arrangement 2703 is shown, which is another variant of the sensor arrangement 2603, but can be seen as a variant of the sensor arrangement 2603 in which S1 and S2 are replaced by 1D magnetic sensors. Figure 24A A sensor arrangement 2703 is shown, which is another variant of the sensor arrangement 2603, but can be seen as a variant of the sensor arrangement 2603 in which S1 and S2 are replaced by 1D magnetic sensors. Figure 25 A sensor arrangement 2703 is shown, which is another variant of the sensor arrangement 2603, but can be seen as a variant of the sensor arrangement 2603 in which S1 and S2 are replaced by 1D magnetic sensors. Figure 26 Such a sensor arrangement can optionally comprise a temperature sensor.

[0350] If the sensor arrangement 2703 comprises a temperature sensor, the correction value D1 can be computed from the measured temperature; and the first angle ψ can be determined based on ΔBx12 and the correction value D1, for example from the ratio of ΔBx12 and D1, for example determined as the arcsine of this ratio; and the second angle may be determined based on ΔBz56 and the correction value D1, or based on ΔBz56 and ΔBz78 and D1, or based on ΔBz56 and ΔBz78 and D1 and ψ, for example based on D1 and based on the sum or average or weighted average of ΔBz56 and ΔBz78.

[0351] In all of the above shown embodiments, the first angle ψ is determined alone, and the second angle may be determined independently of the first angle or depending on the first angle. In certain embodiments, it is possible to consider the value thus computed as a first estimate of the orientation and to perform a correction as a post-processing step (for example using a two-dimensional look-up table, preferably with interpolation). The values of this look-up table can be determined during a calibration process and can be stored in a non-volatile memory of the sensor device.

[0352] In the above shown embodiments, only horizontal and vertical Hall elements are shown, but it is of course possible to use other magnetic sensor structures capable of measuring the same magnetic field components, for example using magnetoresistive (MR) sensors.

[0353] The simulations were performed for a cylindrical two-pole magnet having a diameter D of 4.0 mm and a height H of 4.0 mm, located at a distance “g” of 3.0 mm from a semiconductor substrate (which includes at least two sensor positions S1 and S2 spaced apart by a distance dx of 1.1 mm, 1.6 mm, or 2.2 mm), but the invention is of course not limited thereto and works equally well for two-pole magnets having other dimensions and / or located at another distance “g” from the semiconductor substrate, and for semiconductor substrates in which the distance dx between S1 and S2 is less than 1.1 mm or greater than 2.2 mm (e.g., a value in the range from 1.0 mm to 3.0 mm).

[0354] In the sensor system according to the invention, the magnet is pivotable about a reference point "Pref" which has a predefined position relative to the semiconductor substrate. This point is preferably located on the Z axis which is perpendicular to the substrate and passes through point "C". As already mentioned above, the reference point "Pref" can be located on the positive Z axis, which means that the magnet and the reference point "Pref" are located on the same side of the substrate; or it can be located in the semiconductor substrate (e.g. Figure 1 ); or it may be located on the negative Z axis, i.e. on the opposite side of the substrate from the magnets. However, the invention is not limited thereto and will also work if a (real or imaginary) reference point "Pref" (about which the axis of the magnets can pivot) is located within or above the space defined by the magnets. The above-described methods for calculating ψ and The same formula of can also be used in these cases. Optionally, the sensor device can be further adapted to apply post-processing to these angles in a manner known in the art, such as by applying a first piecewise linear correction for the angle ψ using a first set of predefined coefficients and applying a piecewise linear correction for the angle ψ using a second set of predefined coefficients. These coefficients may be determined during a calibration step and may be stored in a non-volatile memory of the sensor device. In another embodiment, the post-processing step may utilize two-dimensional interpolation based on a two-dimensional lookup table.

[0355] Figure 28 Shows that it can be Figure 1 An electrical block diagram of a sensor device 2802 used in the position sensor system 100 is shown.

[0356] The sensor device 2802 includes a semiconductor substrate having: a plurality of magnetic sensor elements M1 to M4 (e.g., horizontal Hall elements, vertical Hall elements, magnetoresistive (MR) elements, etc.), providing signals m1, m2, m3, m4, etc.; and a processing unit 2830 (e.g., including analog components and / or digital components); and a non-volatile memory 2831 (e.g., EEPROM or flash memory).

[0357] The plurality of magnetic sensor elements M1, M2, etc. can be part of a sensor arrangement as described above, e.g. as illustrated in Figure 10A to Figure 13 or a variant thereof, or as illustrated in Figure 16 to Figure 21 or a variant thereof, or as illustrated in Figure 24A to Figure 27 or a variant thereof.

[0358] The sensor device 2802 can further comprise a temperature sensor, which can be incorporated in the semiconductor substrate containing the magnetic sensor elements.

[0359] The sensor device 2802 further comprises bias and readout circuitry (not shown). Biasing and readout of Hall sensors or of circuits comprising MR elements are well known in the art, whereby no further detailed explanation is required here.

[0360] The sensor device 2802 also comprises a processing circuit 2830, which can be implemented on the same semiconductor substrate as the semiconductor substrate containing the magnetic sensor, or on a second semiconductor substrate which is communicatively connected to the first semiconductor substrate. The processing circuit is configured to determine the first angle ψ or a and the second angle or β, e.g. by using the mathematical formulas described above and / or illustrated in the drawings and / or by using one or more look-up tables (optionally with interpolation). Optionally, a post-correction step is applied as well.

[0361] The addition or subtraction of signals for determining the magnetic field components (e.g. h2-h1 in Figure 3A and / or for determining the magnetic field gradient (e.g. Bx2-Bx1 in Figure 3A ) can be performed in the analog domain before or after amplification, or in the digital domain.

[0362] The processing unit 2830 can comprise a digital processor, which can optionally comprise or be connected to a non-volatile memory 2831 (e.g. NVRAM or EEPROM or flash memory). The memory can comprise one or more constants, look-up tables, coefficients of polynomials, etc. The digital processor 2830 can be e.g. an 8-bit processor or a 16-bit processor.

[0363] Although not explicitly shown, the sensor device 2802 can further comprise one or more components or sub-circuits selected from the group consisting of: an amplifier, a differential amplifier, an analog-to-digital converter (ADC), a multiplexer, etc. The ADC can have a resolution of at least 8 bits or at least 10 bits or at least 12 bits or at least 14 bits or at least 16 bits.

[0364] Reference Signs:

[0365] Pref reference point

[0366] C point in the middle between sensors S1 and S2

[0367] P point in the center of the magnet

[0368] ψ first angle (between the Z-axis and the projection of the vector CP in the plane XZ)

[0369] α (alternative) first angle (between the X-axis and the projection of the vector CP in the plane XZ)

[0370] second angle (between the Z-axis and the projection of the vector CP in the plane YZ)

[0371] β (alternative) second angle (between the Y-axis and the projection of the vector CP in the plane YZ)

[0372] S1, S2,... first, second sensor

[0373] H1, H2,... first, second horizontal Hall element

[0374] h1, h2,... signals obtained from H1, H2

[0375] V1, V2,... first, second vertical Hall element

[0376] v1, v2,... signals obtained from V1, V2

[0377] g distance between the substrate and the magnet (sometimes also referred to as "air gap")

[0378] Bx magnetic field component oriented in the X direction

[0379] By magnetic field component oriented in the Y direction

[0380] Bz magnetic field component oriented in the Z direction

[0381] dBy / dx magnetic field gradient of the By component along the X axis

[0382] S1 (Bx1, By1) first magnetic sensor (pixel) capable of measuring Bx and By components

[0383] Modulus of the reference signs 100:

[0384] -00 position sensor system, e.g. joystick assembly -01 magnet

[0385] -02 sensor device -03 semiconductor substrate with sensor arrangement -30 processing circuitry -31 non-volatile memory.

Claims

1. A sensor device (102) for determining an orientation of a two-pole magnet (101); 1. A sensor device (102) for determining an orientation of a two-pole magnet (101); The sensor device comprises a semiconductor substrate (903; 1003; 1103; 1203; 1303) comprising or being connected to a first magnetic sensor (SI) and a second magnetic sensor (S2), the first and second magnetic sensors (SI, S2) being spaced apart in a first direction (X) by a predefined distance (dx); wherein each of the first and second magnetic sensors (SI, S2) is configured to measure a first magnetic field component (Bxl, Bx2) oriented in the first direction (X), and wherein In a first alternative, each of the first and second magnetic sensors (SI, S2) is further configured to measure a second magnetic field component (Byl, By2) oriented in a second direction (Y) which is parallel to the semiconductor substrate and perpendicular to the first direction (X); or in a second alternative, the semiconductor substrate further comprises a third magnetic sensor (S3) and a fourth magnetic sensor (S4) spaced apart in a second direction (Y) by a second predefined distance (dy), the second direction (Y) being parallel to the semiconductor substrate and perpendicular to the first direction (X), the four magnetic sensors (SI, S2, S3, S4) lying on a virtual ellipse; each of the third and fourth magnetic sensors (S3, S4) is configured to measure a first magnetic field component (Bx3, Bx4) oriented in the first direction (X); or in a third alternative, the semiconductor substrate further comprises a third magnetic sensor (S5) and a fourth magnetic sensor (S6) spaced apart in a second direction (Y) which is parallel to the semiconductor substrate and perpendicular to the first direction (X), the third and fourth magnetic sensors (S5, S6) lying on a virtual line YY which is offset (dxx) from a perpendicular bisector (Y) defined by the first and second magnetic sensors (SI, S2), each of the third and fourth magnetic sensors (S5, S6) being capable of measuring a magnetic field component (Bz5, Bz6) oriented in a third direction which is perpendicular to the substrate; wherein the magnet (101) is movable relative to the sensor device such that a center (P) of the magnet is pivotable about a reference point (Pref) having a predefined position relative to the semiconductor substrate; wherein the sensor device further comprises a processing circuitry (2830) configured to: i) determine a first magnetic field gradient (dBx / dx) of the first magnetic field components (Bxl, Bx2) along the first direction (X); and ii) determine a position (P) of the center (P) of the magnet (101) relative to the reference point (Pref) based on the first magnetic field gradient (dBx / dx); and iii) determine a position (P) of the center (P) of the magnet (101) relative to the reference point (Pref) based on the first and second magnetic field components (Bxl, Bx2, Byl, By2). in said first alternative, determining a second magnetic field gradient (dBy / dx) of the second magnetic field components (By1, By2) along the first direction (X), or in said second alternative, determining a second magnetic field gradient (dBx / dy) along the second direction (Y) based on signals obtained from the third sensor (S3) and the fourth sensor (S4), or in said third alternative, determining a second magnetic field gradient (dBz / dy) of the magnetic field components (Bz5, Bz6) along the second direction (Y) from the third sensor (S5) and the fourth sensor (S6); and iii) for determining a first angle (a, y) based on the first magnetic field gradient (dBx / dx); and iv) for determining a second angle based on the second magnetic field gradient (dBy / dx; dBx / dy; dBz / dy) 2. The sensor device of claim 1, wherein when a virtual line passing through the center (P) of the magnet (101) and through the reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate; or wherein an orthogonal projection of the center (P) of the magnet onto the semiconductor substrate substantially coincides with a point (C) located substantially midway between the first magnetic sensor (S1) and the second magnetic sensor (S2); or wherein the magnet is magnetized in a direction substantially perpendicular to a virtual line passing through the center (P) of the magnet and through the reference point (Pref).

3. The sensor device of claim 1, wherein each of the first magnetic sensor (S1) and the second magnetic sensor (S2) is further configured for measuring a magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the semiconductor substrate; and wherein the processing circuitry is further configured: v) for determining a third magnetic field gradient (dBz / dx) of the magnetic field component (Bz1, Bz2) oriented in the third direction (Z) along the first direction (X); iii) for determining the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx); and iv) for determining the second angle based on the second magnetic field gradient (dBy / dx; dBx / dy; dBz / dy) and the third magnetic field gradient (dBz / dx) 4. The sensor device of claim 1, further comprising a temperature sensor for measuring a temperature; And wherein, the processing circuitry is configured: for determining a correction factor D1 as a predefined function of the measured temperature; and iii) for determining the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D1; iv) for determining the second angle a2 based on the second magnetic field gradient (dBy / dx; dBx / dy; dBz / dy) and the correction factor D1 5. The sensor device of claim 1, wherein, the semiconductor substrate further comprises an additional magnetic sensor (S3; Sc; Sc) located at a middle (C) between the first magnetic sensor (SI) and the second magnetic sensor (S2), the additional magnetic sensor (S3; Sc; Sc) being configured for determining two or more of: a magnetic field component (Bxc) oriented in the first direction (X), a magnetic field component (Byc) oriented in the second direction (Y), a magnetic field component (Bzc) oriented in the third direction (Z); and wherein the processing circuitry is configured to: determine a correction factor D2 as a sum of squares of two or more of the magnetic field components (Bxc, Byc, Bzc) measured by the additional magnetic sensor (S3; Sc; Sc); and iii) determine the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D2; iv) for determining the second angle a2 based on the second magnetic field gradient (dBy / dx; dBx / dy; dBz / dy) and the correction factor D2 6. The sensor device of claim 1, wherein the magnetic sensors are configured as specified in the first alternative or the second alternative; and wherein the processing circuitry is configured to: determine a correction factor D3a as a sum of squares of the first magnetic field gradient (dBx / dx) and the second magnetic field gradient (dBy / dx; dBx / dy); and iii) determine the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D3a; iv) for determining the second angle a2 based on the second magnetic field gradient (dBy / dx; dBx / dy) and the correction factor D3a 7. The sensor device of claim 1, wherein the magnetic sensors are configured as specified in the first alternative; and wherein each of the first magnetic sensor (SI) and the second magnetic sensor (S2) is further configured for measuring a third magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the semiconductor substrate; and wherein the processing circuitry is configured to: determine a third magnetic field gradient (dBz / dx) of the third magnetic field component (Bz1, Bz2) along the first direction (X); and determine a correction factor D3b as a sum of squares of two or more of the first magnetic field gradient (dBx / dx), the second magnetic field gradient (dBy / dx), and the third magnetic field gradient (dBz / dx); and iii) determine the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D3b; iv) for determining the second angle based on the second magnetic field gradient (dBy / dx) and the correction factor D3b 8. The sensor device of claim 1, wherein, the magnetic sensors are configured as specified in the first alternative; and wherein the semiconductor substrate further comprises a third magnetic sensor (S3) located at a middle (C) between the first magnetic sensor (SI) and the second magnetic sensor (S2), and configured for determining a magnetic field component (Bxc) oriented in the first direction (X) and a magnetic field component (Byc) oriented in the second direction (Y); and wherein the processing circuitry is configured to: for determining a second-order gradient (d2By / dx2) of the second magnetic field component (By) along the first direction (X); and for determining a correction factor D4a as a square sum of these second-order gradients; and iii) for determining the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D4a; iv) for determining the second angle based on the second magnetic field gradient (dBy / dx) and the correction factor D4a 9. The sensor device of claim 1, wherein, the magnetic sensor being configured as specified in the first alternative; and wherein each of the first magnetic sensor (S1) and the second magnetic sensor (S2) is further configured for measuring a third magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the substrate; and wherein the semiconductor substrate further comprises a third magnetic sensor (S3) located at a middle (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2), configured for determining a magnetic field component Bxc oriented in the first direction (X), a magnetic field component Byc oriented in the second direction (Y), and a magnetic field component Bzc oriented in the third direction (Z); and wherein the processing circuitry is configured: for determining one or more of a second-order gradient (d2Bx / dx2) of the first magnetic field component (Bx) along the first direction (X), a second-order gradient (d2By / dx2) of the second magnetic field component (By) along the first direction (X), a second-order gradient (d2Bz / dx2) of the third magnetic field component (Bz) along the first direction (X); and for determining a correction factor D4b as a square sum of two or three of the second-order gradients; and iii) for determining the first angle (a, y) based on the first magnetic field gradient (dBx / dx) and the correction factor D4b; iv) for determining the second angle based on the second magnetic field gradient (dBy / dx) and the correction factor D4b 10. The sensor device of claim 1, wherein the sensor device being configured for storing a first relationship between the first magnetic field gradient and the first angle and / or a second relationship between the second magnetic field gradient and the second angle; and wherein the processing circuitry is configured for: determining the first angle based on the first magnetic field gradient and based on the first relationship; and / or determining the second angle based on the second magnetic field gradient and based on the second relationship; preferably wherein the first relationship and / or the second relationship comprises a mathematical formula or a look-up table.

11. A sensor system (100), comprising: a magnetic sensor device (102) according to claim 1; a dipole magnet (101) magnetized or oriented as specified in claim 2.

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