Processing method of storage device and storage device

Abstract

The invention discloses a processing method of a storage device and the storage device. The processing method comprises the steps of determining the type of a target storage block in response to read operation performed on the target storage block of the storage device; obtaining a first read count of the target storage block in response to the fact that the target storage block is the first type block; wherein the first type block represents that the corresponding storage block is not fully written with data and is allowed to be written with data; in response to the fact that the first read count is larger than a first preset threshold value, first preset operation is carried out on the target storage block, so that the target storage block is converted into a second type block from the first type block; or, performing a second preset operation on the target storage block, so that the target storage block is converted into a third type block from the first type block. Through the above mode, the processing method provided by the invention can reduce the risk of read interference in the first type block, and can reduce the overhead of the storage device under the condition of ensuring the data reliability.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of memory, in particular to a processing method of a storage device and the storage device. BACKGROUND

[0002] With the development of science and technology, the application of memory is also more and more widely, and read disturb is one of the reasons for reducing the reliability of the stored data of the memory in the application product of the memory. In the memory, the memory includes a plurality of storage blocks (Block), and the general read disturb test is based on Close Block, which refers to a storage block completely filled with data, that is, it is assumed that the data of the storage block is completely written after the read disturb occurs. Corresponding to the Close Block is the Open Block which is not completely filled. In the actual scene, the Open Block has a probability of experiencing a certain number of read disturbances, and such read disturbances often have an additional risk than the read disturbance of the Close Block. In the prior art, it is generally necessary to solve the above-mentioned problem by erase page check, that is, by actually reading the result of the unprogrammed word line (WL) to judge whether data can be written into it, but this scheme may introduce additional read operations, affecting the quality of service (QoS) of the storage service. For high QoS requirement products, there is an urgent need for a processing method of a storage device for Open Block. SUMMARY

[0003] In order to solve the above problems, the present application provides a processing method of a storage device and a storage device, which aims to solve the above-mentioned problems.

[0004] To solve the above technical problems, one technical solution adopted by the present application is to provide a processing method of a storage device, which comprises: in response to a read operation on a target storage block of the storage device, determining the type of the target storage block; in response to the target storage block being a first type block, obtaining a first read count of the target storage block; wherein the first type block indicates that the corresponding storage block is not full of data and allows to be written with data; in response to the first read count being greater than a first preset threshold, performing a first preset operation on the target storage block to convert the target storage block from the first type block to a second type block; or, performing a second preset operation on the target storage block to convert the target storage block from the first type block to a third type block; wherein the second type block indicates that the corresponding storage block is full of data or the storage block is not full of data but is prohibited to be written with data, and the third type block indicates that the corresponding storage block is an idle block.

[0005] The first preset operation on the target storage block includes: directly setting a write-prohibited mark for the target storage block; or, filling the target storage block with invalid data and setting a write-prohibited mark for the target storage block; the write-prohibited mark is used to prohibit the target storage block from writing data before performing an erase operation; the second preset operation on the target storage block includes: performing a data refresh operation or a garbage collection operation on the target storage block.

[0006] The processing method further includes: in response to the first read count being less than or equal to a first preset threshold and the target storage block satisfying a first preset condition, obtaining an error bit count or an original bit error rate of the target storage block; and in response to the error bit count or the original bit error rate being greater than a second preset threshold, performing a second preset operation on the target storage block to convert the target storage block from the first type block to a third type block.

[0007] The processing method further includes: in response to the target storage block being converted from the first type block to the second type block, obtaining a preset amplification coefficient, calculating a third read count based on the first read count and the preset amplification coefficient, and taking the third read count as an initial read count when the target storage block is converted to the second type block; or, in response to the target storage block being filled with data when it is the first type block, obtaining a preset amplification coefficient, calculating a third read count based on the first read count and the preset amplification coefficient, converting the target storage block from the first type block to the second type block, and taking the third read count as an initial read count corresponding to the second type block.

[0008] The preset amplification coefficient is obtained in the following manner: obtaining a first mapping relationship between read counts and characteristic quantities in the second type block; obtaining a second mapping relationship between read counts and characteristic quantities in the first type block; and obtaining the preset amplification coefficient based on the first mapping relationship and the second mapping relationship; wherein the characteristic quantities include an error bit count, an original bit error rate, or a width of a valley overlap region of threshold distributions of an erase state and a program state in the storage block.

[0009] The preset amplification coefficient is obtained in the following manner: obtaining read counts and corresponding weights of the first type block when read interference occurs in different word line intervals; and calculating the preset amplification coefficient based on the read counts and the corresponding weights.

[0010] The processing method further includes: in response to the target storage block being the second type block, obtaining a second read count of the target storage block; in response to the second read count being greater than a third preset threshold, performing a second preset operation on the target storage block to convert the target storage block from the second type block to the third type block; wherein the third preset threshold is greater than the first preset threshold.

[0011] The processing method further includes: in response to the second read count being less than or equal to a third preset threshold and the target storage block satisfying a second preset condition, obtaining an error bit count or an original bit error rate of the target storage block; and in response to the error bit count or the original bit error rate being greater than a second preset threshold, performing a second preset operation on the target storage block, so that the target storage block is converted from the second type block to a third type block.

[0012] The processing method further includes: in response to the error bit count or the original bit error rate being less than or equal to a second preset threshold, waiting for a next read operation on the target storage block.

[0013] To solve the above technical problems, another technical solution adopted by the present application is to provide a storage device, which includes a plurality of storage blocks and a control unit, and the storage block includes a plurality of storage unit pages; the control unit is connected with the plurality of storage blocks and is used to execute the processing method of the storage device according to any one of the above.

[0014] Different from the prior art, the processing method of the storage device includes: in response to a read operation on a target storage block of the storage device, determining a type of the target storage block; in response to the target storage block being a first type block, obtaining a first read count of the target storage block; wherein the first type block indicates that the corresponding storage block is not full of data and is allowed to be written with data; in response to the first read count being greater than a first preset threshold, performing a first preset operation on the target storage block, so that the target storage block is converted from the first type block to a second type block; or performing a second preset operation on the target storage block, so that the target storage block is converted from the first type block to a third type block. In this way, the processing method can reduce the risk of read interference of the first type block, and reduce the overhead of the storage device while ensuring data reliability. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. Among them:

[0016] Figure 1 is a structure diagram of an embodiment of the Open Block and Close Block provided by the present application;

[0017] Figure 2 is a threshold value distribution diagram of a storage unit of the Close Block after experiencing read interference provided by the present application;

[0018] Figure 3Fig. 1 is a schematic diagram of threshold distribution of a storage unit after the Open Block experiences read interference according to the present application;

[0019] Figure 4 Fig. 2 is a schematic diagram of a flow of a first embodiment of the processing method of the storage device according to the present application;

[0020] Figure 5 Fig. 3 is a schematic diagram of a flow of a second embodiment of the processing method of the storage device according to the present application;

[0021] Figure 6 Fig. 4 is a schematic diagram of a flow of a third embodiment of the processing method of the storage device according to the present application;

[0022] Figure 7 Fig. 5 is a schematic diagram of a flow of a first embodiment of obtaining a preset amplification coefficient according to the present application;

[0023] Figure 8 Fig. 6 is a schematic diagram of a curve of a first type block and a second type block according to an embodiment of the present application;

[0024] Figure 9 Fig. 7 is a schematic diagram of a curve of a width of a valley overlapping area in a first type block and a second type block according to an embodiment of the present application;

[0025] Figure 10 Fig. 8 is a schematic diagram of a flow of a second embodiment of obtaining a preset amplification coefficient according to the present application;

[0026] Figure 11 Fig. 9 is a schematic diagram of a flow of a fourth embodiment of the processing method of the storage device according to the present application;

[0027] Figure 12 Fig. 10 is a schematic diagram of a flow of a fifth embodiment of the processing method of the storage device according to the present application;

[0028] Figure 13 Fig. 11 is a schematic diagram of a structure of an embodiment of the storage device according to the present application. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. It can be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application. In addition, it should be noted that, for the convenience of description, only the parts related to the present application are shown in the drawings, but not all the structures. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0030] Reference to“an embodiment” herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase“in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily all referring to a common set of embodiments, although they can. The use of the term“in one embodiment” in various places in the specification in connection with a feature or structure can mean that a particular feature, structure, or characteristic is included in at least one embodiment of the application. It will be explicitly understood that the embodiments described herein can be combined with each other in their entirety or with each other in part, without new combinations being explicitly listed.

[0031] With the development of science and technology, the application of memory is also more and more extensive. In the application products of the memory, read disturb is one of the reasons for reducing the reliability of the stored data of the memory. In the memory, the memory includes a plurality of storage blocks (Blocks). Generally, the read disturb test is based on Close Block. Close Block refers to a storage block that is completely filled with data, that is, it is assumed that the data of the storage block is completely written after the read disturb occurs. Corresponding to Close Block is Open Block, which refers to a block that is not completely filled. In actual scenarios, Open Block has a probability of experiencing a certain number of read disturbances, and such read disturbances often have an additional risk than Close Block. In the prior art, it is generally necessary to solve the above problem through Erase Page Check, that is, by actually reading the result of the unprogrammed word line (WL) to determine whether data can be written into it, but this scheme may introduce additional read operations, affecting the quality of service (QoS) of the storage service. For products with high QoS requirements, there is an urgent need for a processing method for Open Block storage devices.

[0032] Please refer to Figure 1 , Figure 1 is a structural schematic diagram of an embodiment of Open Block and Close Block provided by the application. As shown in Figure 1 (a) of FIG. 1, Figure 1 (a) of FIG. 1, the storage block is Close Block, that is, Figure 1 (a) of FIG. 1, all word lines of the storage block have completed programming, that is, all storage units are random data (Random Pattern). As shown in Figure 1 (b) of FIG. 1, Figure 1 (b) of FIG. 1, the storage block is Open Block, that is, Figure 1 (b) of FIG. 1, part of the word lines of the storage block have completed programming, the word line WL0 to the word line WLn have completed programming, and the word line WLn to the word line WLmax have not been programmed and are in an erase state.

[0033] Please refer to Figure 2 andFigure 3 , Figure 2 is a threshold distribution diagram of a storage unit in a Close Block after experiencing read disturbance according to the present application; Figure 3 is a threshold distribution diagram of a storage unit in an Open Block after experiencing read disturbance according to the present application. As shown in Figure 2 , when a read operation is performed on a word line WLn in a Close Block as shown in (a) of Figure 1 , all word lines WL in the Close Block have completed programming, i.e. all storage units are in Random Pattern. Taking WLn+1 as an example, for low state storage units, such as L0 state (Erase state) and L1 state (programmed state), which are susceptible to read disturbance, and which have all completed programming verification (Verify). When read disturbance occurs, both L0 state and L1 state will be affected by read disturbance and cause the threshold voltage to increase, but the rising speed of the threshold voltage of the storage unit in L0 state will be faster than that of the storage unit in L1 state, so the width of the valley of the L0 state and L1 state threshold distribution (Valley) will narrow to a certain extent.

[0034] As shown in Figure 3 , when a read operation is performed on a word line WLn in an Open Block as shown in (b) of Figure 1 , the word line WLn+1 in the Open Block has not completed programming and is in Erase state, and experiences read disturbance in the Erase state. Taking the word line WLn+1 as an example, if WLn+1 is programmed again at this time, the Erase state becomes a number of programmed states, L1 state, and the threshold voltage of the storage unit in L1 state does not rise after programming verification (Verify) because it has already experienced read disturbance before the programming of the word line WLn+1 is completed, but the threshold voltage of the storage unit in L0 state still increases due to the influence of read disturbance.

[0035] In the case of Open Block and Close Block experiencing the same number of read operations, only because the order of experiencing read disturbance and completing programming is different, the width of the valley of the L0 state and L1 state threshold distribution of the word line WLn+1 in the Close Block (Valley1) is greater than the width of the valley of the L0 state and L1 state threshold distribution of the word line WLn+1 in the Open Block (Valley2), so the maximum read failure bit count (Best Read FBC) in the Close Block will be less than the maximum read failure bit count (Best Read FBC) in the Open Block, and it can be seen that the risk of read disturbance in the Open Block is higher.

[0036] To solve the above problems, the present application provides a processing method of a storage device, please refer to Figure 4 , Figure 4 is a flowchart of the first embodiment of the processing method of the storage device of the present application.

[0037] As shown in Figure 4 , the processing method of the storage device of the present embodiment comprises steps S101 to S103:

[0038] Step S101: in response to a read operation on a target storage block of the storage device, determine the type of the target storage block.

[0039] In the present embodiment, when the data of the target storage block in the storage device needs to be read, i.e. a read operation is performed on the target storage block, the type of the target storage block needs to be determined first in the present embodiment when the read operation is performed.

[0040] Step S102: in response to the target storage block being a first type block, obtain a first read count of the target storage block.

[0041] In the present embodiment, the types of the storage blocks include first type blocks, second type blocks and third type blocks; the first type blocks are the Open Blocks described above, indicating that the corresponding storage blocks are not full of data and are allowed to be written with data.

[0042] If the target storage block is a first type block, the first read count in the read counter corresponding to the target storage block can be obtained directly after the read operation is completed, and it is determined whether the first read count is greater than a first preset threshold.

[0043] The first preset threshold can be set based on the actual situation of the storage device.

[0044] Step S103: in response to the first read count being greater than the first preset threshold, performing a first preset operation on the target storage block to convert the target storage block from the first type block to the second type block; or, performing a second preset operation on the target storage block to convert the target storage block from the first type block to the third type block.

[0045] When the first read count in the read counter corresponding to the target storage block is greater than the first preset threshold, it is considered that the target storage block is subject to read interference, and the data subsequently written into the target storage block will be changed due to the influence of the read interference, thus leading to a decrease in the data reliability of the target storage block and an increase in the risk, and therefore the first preset operation needs to be performed on the target storage block to convert the target storage block from the first type block to the second type block.

[0046] The second type block indicates that the corresponding storage block is full of data or the storage block is not full of data but is prohibited from being written with data. In this embodiment, the second type block includes the Close Block described above, and also includes a storage block that is not full of data but is prohibited from being written with data. When the first preset operation is performed on the target storage block, invalid data can be written into the target storage block until the target storage block is full of data. In addition, after the target storage block is full of data, the target storage block is also required to be prohibited from being written with data before the target storage block is subjected to the erasing operation, so that the target storage block is converted from the first type block to the Close Block in the second type block. In other embodiments, the target storage block can be directly prohibited from being written with data, so that the target storage block is converted from the first type block to a storage block that is not full of data but is prohibited from being written with data in the second type block.

[0047] In addition, when the first read count in the read counter corresponding to the target storage block is greater than the first preset threshold, the second preset operation can also be performed on the target storage block, so that the target storage block is converted from the first type block to the third type block. In this embodiment, the third type block is an idle block, which indicates that the storage block can continue to be used after being erased. The second preset operation performed on the target storage block is a garbage collection operation or a data refresh operation.

[0048] Different from the prior art, the processing method of the storage device includes: in response to a read operation performed on a target storage block of the storage device, determining the type of the target storage block; in response to the target storage block being a first type block, obtaining a first read count of the target storage block; the first type block indicates that the corresponding storage block is not full of data and is allowed to be written with data; in response to the first read count being greater than a first preset threshold, performing a first preset operation on the target storage block, so that the target storage block is converted from the first type block to a second type block; or, performing a second preset operation on the target storage block, so that the target storage block is converted from the first type block to a third type block. In this way, the processing method can reduce the risk of read interference in the first type block, and can reduce the overhead of the storage device while ensuring data reliability.

[0049] Optionally, based on the embodiment of Figure 4 In this embodiment, the first preset operation performed on the target storage block specifically includes: directly setting a write-prohibited flag for the target storage block; or, filling the target storage block with invalid data and setting the write-prohibited flag for the target storage block.

[0050] The write-prohibited flag is used to prohibit the target storage block from being written with data before the target storage block is subjected to the erasing operation.

[0051] As mentioned above, in order to reduce the risk of read interference in the first type block, when the first read count corresponding to the first type block is greater than the first preset threshold, the data subsequently written to the target storage block will be affected by the read interference, and the data reliability will be reduced. Therefore, when the first read count corresponding to the first type block is greater than the first preset threshold, the first type block needs to be type converted. When converting the first type block to the second type block, invalid data can be first filled into the target storage block, and a write-prohibited mark can be set for the target storage block, or a write-prohibited mark can be directly set for the target storage block.

[0052] Performing the second preset operation on the target storage block specifically includes: performing a data refresh operation or a garbage collection operation on the target storage block.

[0053] If it is necessary to convert the first type block into the third type block, a data refresh operation or a garbage collection operation can be directly performed on the target storage block.

[0054] Optionally, based on Figure 4 For an example, see Figure 5 , Figure 5 This is a flow chart of the second embodiment of the processing method of the storage device of the present application. Figure 5 As shown, the processing method of the storage device in this embodiment further includes steps S201 to S202:

[0055] Step S201: in response to a first read count being less than or equal to a first preset threshold and a target storage block meeting a first preset condition, obtaining an error bit count or a raw bit error rate of the target storage block.

[0056] As mentioned above, if the target storage block is a first type block, after the read operation on the target storage block is completed, the first read count in the read counter corresponding to the target storage block can be directly obtained. At this time, if the first read count is less than or equal to the first preset threshold, it means that the storage block is currently less affected by the read interference, but at this time it is still necessary to determine whether the first read count of the target storage block meets the first preset condition. If the first read count of the target storage block meets the first preset condition, a read scan operation is performed on the target storage block to obtain the error bit count (Fail Bit Count, FBC) or raw bit error rate (Raw Bit Error Rate, RBER) of the target storage block. Among them, the error bit count and the raw bit error rate are both used to reflect the most original reliability status of the storage block. The higher the error bit count and the raw bit error rate, the worse the reliability of the storage block.

[0057] If the first read count of the target storage block does not meet the first preset condition, then wait for the next read operation on the target storage block and continue to execute the above method.

[0058] In this embodiment, the first preset condition can be set based on actual conditions, which is not limited here.

[0059] Step S202: In response to the error bit count or the raw bit error rate being greater than the second preset threshold, performing a second preset operation on the target storage block to convert the target storage block from the first type block to the third type block.

[0060] When the target storage block error bit count (FBC) or raw bit error rate (RBER) is greater than the corresponding second preset threshold, it indicates that the data stored in the target storage block has too low reliability and decreased value for use, and thus a second preset operation needs to be performed on the target storage block to convert the target storage block from the first type block to the third type block. That is, as described above, a data refresh or garbage collection operation is performed on the target storage block to convert the target storage block to the third type block (i.e., an idle block).

[0061] Optionally, based on the above embodiments, please refer to Figure 6 , Figure 6 is a flowchart of a third embodiment of the processing method of the storage device of the present application. As shown in Figure 6 , the processing method of the storage device of the present embodiment further includes steps S301 to S302:

[0062] Step S301: In response to the target storage block being converted from the first type block to the second type block or the target storage block being full of data when it is the first type block, a preset amplification coefficient is obtained.

[0063] As described above, when the first read count corresponding to the first type block is greater than the first preset threshold, the first type block is then subjected to the first preset operation, and no data is written to the first type block. However, when the target storage block is the first type block, we cannot determine the sequence of read disturbance and programming of the target storage block, and as described above, the risk of the storage block being subjected to read disturbance first and then programming is higher. Therefore, when the target storage block is converted from the first type block to the second type block, the first read count corresponding to the target storage block needs to be amplified. Similarly, when the target storage block is the first type block and is converted to the second type block after being full of data, the first read count corresponding to the target storage block also needs to be amplified.

[0064] At this time, when the first read count corresponding to the target storage block is amplified, a preset amplification coefficient stored in advance can be obtained.

[0065] Step S302: calculating a third read count based on the first read count and the preset amplification coefficient, taking the third read count as an initial read count when the target storage block is converted into a second-type block.

[0066] After the preset amplification coefficient is acquired, the third read count can be calculated based on the first read count and the preset amplification coefficient, and the third read count is taken as the initial read count when the target storage block is converted into a second-type block.

[0067] Optionally, the preset amplification coefficient is acquired in the manner as shown in Figure 7 Please refer to Figure 7 , Figure 7 is a flowchart of the first embodiment of the present application for acquiring the preset amplification coefficient. As shown in Figure 7 , the acquisition of the preset amplification coefficient in the present embodiment includes steps S401 to S403:

[0068] Step S401: acquiring a first mapping relationship between read counts and characteristic quantities in a second-type block.

[0069] In the present embodiment, the preset amplification coefficient stored in advance can be acquired by means of offline measurement. In the present embodiment, the present embodiment can first acquire the first mapping relationship between read counts and characteristic quantities in a second-type block by means of offline measurement.

[0070] Step S402: acquiring a second mapping relationship between read counts and characteristic quantities in a first-type block.

[0071] Then the second mapping relationship between read counts and characteristic quantities in a first-type block is acquired by means of offline measurement.

[0072] Step S403: acquiring the preset amplification coefficient based on the first mapping relationship and the second mapping relationship.

[0073] After the first mapping relationship and the second mapping relationship are acquired, the preset amplification coefficient can be acquired based on the first mapping relationship and the second mapping relationship.

[0074] The characteristic quantities include error bit counts, original bit error rates, or widths of trough overlapping regions of threshold distributions in storage blocks.

[0075] In an application scenario, please refer to Figure 8 , Figure 8 is a curve diagram of an embodiment of the original bit error rate in the first-type block and the second-type block of the present application. As shown in Figure 8As shown, the raw bit error rate in the first type block and the second type block gradually increases as the read count increases, but the raw bit error rate in the second type block increases at a slower rate than that in the first type block. Therefore, in this embodiment, the preset amplification factor can be obtained based on the first mapping relationship between the read count and the raw bit error in the second type block and the second mapping relationship between the read count and the raw bit error in the first type block. For example, if the raw bit error rate in the first type block with a read count of 10,000 is the same as the raw bit error rate in the second type block with a read count of 20,000, then when the read count of the target storage block is 10,000 and the target storage block is converted from the first type block to the second type block, the preset amplification factor can be set to 2.

[0076] See also Figure 9 , Figure 9 : is a curve diagram of an embodiment of the width of the valley overlap area in the first type block and the second type block of the present application. Figure 9 As shown, the width of the valley overlap region of the erased state and programmed state threshold distributions in the first-type blocks and the second-type blocks gradually decreases as the read count increases, but the decreasing rate of the valley overlap region width in the first-type blocks is faster than the decreasing rate of the valley overlap region width in the second-type blocks. Therefore, in this embodiment, the preset amplification factor can also be obtained based on the first mapping relationship between the read count and the valley overlap region width in the second-type blocks and the second mapping relationship between the read count and the valley overlap region width in the first-type blocks.

[0077] Optionally, the method for obtaining the preset magnification factor is as follows: Figure 10 See Figure 10 , Figure 10 This is a flow chart of the second embodiment of obtaining the preset amplification factor of this application. Figure 10 As shown, obtaining the preset magnification factor in this embodiment includes steps S501 to S502:

[0078] Step S501: Obtain read counts and corresponding weights of a first type block when read disturbance occurs in different word line intervals.

[0079] Please refer to Table 1, which is a schematic diagram of an embodiment of read counts and corresponding weights of a first type block when read disturbance occurs in different word line intervals.

[0080]

[0081] In this embodiment, the read counts and corresponding weights of the first type block when read disturbance occurs in different word line intervals can be obtained as shown in Table 1.

[0082] Step S502: calculating a preset amplification coefficient based on the read count and the corresponding weight.

[0083] After obtaining the read count and the corresponding weight of the first type block when read disturbance occurs in different word line intervals, the preset amplification coefficient can be calculated based on the following formula:

[0084]

[0085] Wherein, A represents the preset amplification coefficient, RDC(i) represents the read count of the i-th group of word line intervals, and F(i) represents the weight corresponding to the i-th group of word line intervals.

[0086] Optionally, based on the embodiment of Figure 6 , please refer to Figure 11 , Figure 11 is the flowchart of the fourth embodiment of the processing method of the storage device. As shown in Figure 11 , the processing method of the storage device further includes steps S601 to S602:

[0087] Step S601: in response to the target storage block being a second type block, obtaining a second read count of the target storage block.

[0088] As described above, when the data of the target storage block in the storage device needs to be read, that is, when the read operation is performed on the target storage block, in this embodiment, the type of the target storage block needs to be determined first when the read operation is performed; if the target storage block is a second type block, the second read count of the read counter corresponding to the target storage block is obtained.

[0089] In this embodiment, the initial read count of the read counter corresponding to the target storage block when it is converted into a second type block is obtained by amplifying the first read count described above, that is, the second read count is the initial read count of the read counter of the second type block plus the total number of times of read operation on the second type block subsequently.

[0090] Step S602: in response to the second read count being greater than a third preset threshold, performing a second preset operation on the target storage block to convert the target storage block from a second type block to a third type block; wherein the third preset threshold is greater than the first preset threshold.

[0091] If the second read count corresponding to the second type block is greater than the third preset threshold, it is considered that the second type block is subject to read interference, and subsequent read operations on the target storage block will cause the data reliability of the target storage block to decrease and the risk to increase. Therefore, at this time, the second preset operation needs to be performed on the target storage block to convert the target storage block from the second type block to the third type block. That is, as described above, the data refresh or garbage collection operation is performed on the target storage block to convert the target storage block to the third type block (i.e., the idle block). In this embodiment, the third preset threshold is set to be greater than the first preset threshold.

[0092] Optionally, based on the embodiment of Figure 11 , please refer to Figure 12 , Figure 12 is a flowchart of a fifth embodiment of the processing method of the storage device of the present application. As shown in Figure 12 , the processing method of the storage device of the present embodiment further includes steps S701 to S702:

[0093] Step S701: In response to the second read count being less than or equal to the third preset threshold and the target storage block satisfying the second preset condition, the error bit count or the raw bit error rate of the target storage block is obtained.

[0094] As described above, if the target storage block is a second type block, after the read operation on the target storage block is completed, the second read count corresponding to the target storage block can be directly obtained. At this time, if the second read count is less than or equal to the third preset threshold, it means that the target storage block can still be read at present, but it is still necessary to determine whether the second read count of the target storage block satisfies the second preset condition. If the second read count of the target storage block satisfies the second preset condition, the read scan operation is performed on the target storage block to obtain the error bit count (FBC) or the raw bit error rate (RBER) of the target storage block. If the second read count of the target storage block does not satisfy the second preset condition, the next read operation on the target storage block is waited, and the above method is continuously executed.

[0095] Step S702: In response to the error bit count or the raw bit error rate being greater than the second preset threshold, the second preset operation is performed on the target storage block to convert the target storage block from the second type block to the third type block.

[0096] When the Fail Bit Count (FBC) or Raw Bit Error Rate (RBER) of the target storage block is greater than the corresponding second preset threshold, it indicates that the data reliability of the target storage block is too low and the use value is reduced, and thus the second preset operation needs to be performed on the target storage block to convert the target storage block from the second type block to the third type block.

[0097] That is, as described above, the data refresh or garbage collection operation is performed on the target storage block to convert the target storage block to the third type block (i.e., the idle block).

[0098] Optionally, based on the above embodiments, the processing method of the storage device of the present embodiment further includes the following method:

[0099] In response to the Fail Bit Count or the Raw Bit Error Rate being less than or equal to the second preset threshold, waiting for the next read operation on the target storage block.

[0100] As described above, when the first read count of the first type block meets the first preset condition or the read count of the second type block meets the second preset condition, the read scan needs to be performed on the target storage block to obtain the Fail Bit Count or the Raw Bit Error Rate of the target storage block. The Fail Bit Count and the Raw Bit Error Rate are both used to reflect the most original reliability state of the storage block. The higher the Fail Bit Count and the Raw Bit Error Rate, the worse the reliability of the storage block.

[0101] In the present embodiment, if the Fail Bit Count and the Raw Bit Error Rate of the target storage block are less than or equal to the second preset threshold, it indicates that the reliability of the target storage block is good, and thus the data refresh or garbage collection operation is not needed, and the next read operation can be performed on the target storage block.

[0102] Optionally, the present application further proposes a storage device, please refer to Figure 13 , Figure 13 is a structural schematic diagram of an embodiment of the storage device of the present application. As Figure 13 shown, the storage device 100 of the present embodiment includes a plurality of storage blocks 110 and a control unit 120, the storage block 110 includes a plurality of storage unit pages 111; the control unit 120 is connected with the plurality of storage blocks 110 and is used to execute the processing method of the storage device of any one of the above embodiments.

[0103] As Figure 13As shown, in the embodiment, the storage device 100 can be a flash memory device. The storage device 100 of the embodiment includes a plurality of storage blocks 110, each of which is connected with a bit line. The GSL and SSI correspond to two switch tubes, and the selection of the storage cell page 111 in the middle part, i.e., the storage cell page 111 corresponding to WL0, WL1, …, WLN, is realized by controlling the two switch tubes, wherein WL0, WL1, …, WLN can be referred to as data word lines (data WL), and after the selection, the read, write or erase operation can be performed.

[0104] The above description is merely an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation according to the content of the specification and the drawings, or direct or indirect application in other related technical fields, is also included in the patent protection scope of the present application.

Claims

1. A processing method of a storage device, characterized by, The method comprises: in response to a read operation on a target storage block of a storage device, determining a type of the target storage block; in response to the target storage block being a first type block, obtaining a first read count of the target storage block; wherein the first type block indicates that the corresponding storage block is not full of data and is allowed to be written with data; in response to the first read count being greater than a first preset threshold, performing a first preset operation on the target storage block to convert the target storage block from the first type block to a second type block, or performing a second preset operation on the target storage block to convert the target storage block from the first type block to a third type block; wherein the second type block indicates that the corresponding storage block is full of data or the storage block is not full of data but is prohibited from being written with data, and the third type block indicates that the corresponding storage block is an idle block.

2. The treatment method according to claim 1, characterized in that, The first preset operation on the target storage block comprises: directly setting a write-prohibited flag for the target storage block; or filling the target storage block with invalid data and setting the write-prohibited flag for the target storage block; the write-prohibited flag is used to prohibit the target storage block from being written with data before an erasing operation is performed. The second preset operation on the target storage block comprises: performing a data refresh operation or a garbage collection operation on the target storage block.

3. The treatment method of claim 1, wherein The processing method further comprises: in response to the first read count being less than or equal to the first preset threshold and the target storage block satisfying a first preset condition, obtaining an error bit count or an original bit error rate of the target storage block; in response to the error bit count or the original bit error rate being greater than a second preset threshold, performing the second preset operation on the target storage block to convert the target storage block from the first type block to the third type block.

4. The treatment method of claim 1, wherein The processing method further comprises: in response to the target storage block being converted from the first type block to the second type block, obtaining a preset amplification coefficient, calculating a third read count based on the first read count and the preset amplification coefficient, and taking the third read count as an initial read count when the target storage block is converted to the second type block; or, in response to the target storage block being full of data when it is the first type block, obtaining a preset amplification coefficient, calculating a third read count based on the first read count and the preset amplification coefficient, converting the target storage block from the first type block to the second type block, and taking the third read count as an initial read count corresponding to the second type block.

5. The treatment method according to claim 4, characterized in that, The preset amplification coefficient is obtained in the following manner: obtaining a first mapping relationship between a read count and a feature quantity in the second type block; obtaining a second mapping relationship between a read count and a feature quantity in the first type block; obtaining the preset amplification coefficient based on the first mapping relationship and the second mapping relationship; wherein the feature quantity comprises an error bit count, an original bit error rate, or a width of an overlap region of a valley of an erasing state threshold distribution and a programming state threshold distribution in a storage block.

6. The treatment method of claim 4, wherein The preset amplification coefficient is obtained in the following manner: obtaining a read count and a corresponding weight of the first type of block when read disturbance occurs in different word line intervals; calculating the preset amplification coefficient based on the read count and the corresponding weight.

7. The treatment method of claim 4, wherein The processing method further comprises: obtaining a second read count of the target storage block in response to the target storage block being the second type of block; performing the second preset operation on the target storage block to convert the target storage block from the second type of block to a third type of block in response to the second read count being greater than a third preset threshold; wherein the third preset threshold is greater than the first preset threshold.

8. The treatment method according to claim 7, characterized in that, The processing method further comprises: obtaining an error bit count or an original bit error rate of the target storage block in response to the second read count being less than or equal to the third preset threshold and the target storage block satisfying a second preset condition; performing the second preset operation on the target storage block to convert the target storage block from the second type of block to a third type of block in response to the error bit count or the original bit error rate being greater than the second preset threshold.

9. The treatment method according to claim 3 or 8, characterized in that, The processing method further comprises: waiting for a next read operation on the target storage block in response to the error bit count or the original bit error rate being less than or equal to the second preset threshold.

10. A storage device, comprising: comprises: a plurality of storage blocks, the storage blocks comprising a plurality of storage unit pages; a control unit connected with the plurality of storage blocks, configured to execute the processing method of the storage device according to any one of claims 1-9.

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