Radio frequency front-end module and electronic equipment

Abstract

The embodiment of the invention provides a radio frequency front-end module and electronic equipment, a connecting port of the radio frequency front-end module is used for being connected with a signal port through a first inductor, the radio frequency front-end module comprises a substrate, a low-noise amplifier and a microstrip line, the substrate is provided with the connecting port, the low-noise amplifier is arranged on the substrate, and the microstrip line is arranged on the substrate. The low-noise amplifier comprises an input port, the microstrip line is arranged on the substrate, the first end of the microstrip line is connected with the connecting port, and the second end of the microstrip line is connected with the input port of the low-noise amplifier; and the characteristic impedance of the microstrip line is greater than 50 ohms. The microstrip line with the characteristic impedance larger than 50 ohms is connected between the input port of the low-noise amplifier and the connecting port of the radio frequency front-end module in series, the real part impedance of the input end impedance of the input port can be increased, the matching performance can be improved, and then the gain of the low-noise amplifier can be increased.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and an electronic device. BACKGROUND

[0002] With the rapid development of new generation information technology, the technologies in various subfields are constantly updated and improved, and higher requirements are also faced for various performance indicators of a radio frequency front-end module. The radio frequency front-end module includes a low noise amplifier (LNA), and an input port of the low noise amplifier is connected with a connection port on a substrate of the radio frequency front-end module. In the radio frequency front-end module of the related art, the input impedance at the input port of the low noise amplifier is low, which causes the gain of the low noise amplifier to be unable to meet actual requirements. SUMMARY

[0003] The present application provides a radio frequency front-end module and an electronic device, which can improve the gain of a low noise amplifier.

[0004] In a first aspect, an embodiment of the present application provides a radio frequency front-end module, a connection port of the radio frequency front-end module is used to be connected with a signal port through a first inductor, and the radio frequency front-end module includes: a substrate, the substrate is provided with the connection port; a low noise amplifier, the low noise amplifier is arranged on the substrate, and the low noise amplifier includes an input port; a microstrip line, the microstrip line is arranged on the substrate, a first end of the microstrip line is connected with the connection port, and a second end of the microstrip line is connected with the input port of the low noise amplifier; The microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms.

[0005] In a second aspect, an embodiment of the present application provides a radio frequency front-end module, and the radio frequency front-end module includes: a substrate, the substrate is provided with a connection port; a low noise amplifier, the low noise amplifier is arranged on the substrate, and the low noise amplifier includes an input port; a microstrip line, the microstrip line is arranged on the substrate, a first end of the microstrip line is connected with the connection port, and a second end of the microstrip line is connected with the input port of the low noise amplifier; The ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.5.

[0006] In a third aspect, an embodiment of the present application provides a radio frequency front-end module, and the radio frequency front-end module includes: a substrate, the substrate is provided with a connection port; a low noise amplifier disposed on the substrate, the low noise amplifier comprising an input port; an adjustment unit comprising a microstrip line and a second inductor connected in series between the connection port and the input port of the low noise amplifier; the microstrip line is disposed on the substrate.

[0007] In a fourth aspect, the embodiments of the present application provide a radio frequency front-end module, which comprises: a substrate, the substrate being provided with a connection port; a low noise amplifier disposed on the substrate, the low noise amplifier comprising an input port; an adjustment unit comprising a microstrip line and a third inductor and / or a fourth inductor, wherein the third inductor grounds a first end of the microstrip line, and the fourth inductor grounds a second end of the microstrip line; the microstrip line is disposed on the substrate.

[0008] In a fifth aspect, the embodiments of the present application provide an electronic device, which comprises the radio frequency front-end module as described above.

[0009] The radio frequency front-end module and the electronic device provided by the embodiments of the present application, the connection port of the radio frequency front-end module is used to be connected with the signal port through the first inductor, the radio frequency front-end module comprises a substrate, a low noise amplifier and a microstrip line, the substrate is provided with the connection port, the low noise amplifier is disposed on the substrate, the low noise amplifier comprises an input port, the microstrip line is disposed on the substrate, a first end of the microstrip line is connected with the connection port, and a second end of the microstrip line is connected with the input port of the low noise amplifier; the microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms. By connecting a section of microstrip line with a characteristic impedance greater than 50 ohms in series between the input port of the low noise amplifier and the connection port of the radio frequency front-end module, the real part impedance of the connection port of the radio frequency front-end module can be increased, and the matching performance can be improved, the connection port is connected with the input port of the low noise amplifier, and then the gain of the low noise amplifier can be increased; and when the real part impedance of the connection port (B point) in the radio frequency front-end module meets the actual demand (for example, the demand for high gain), the value of the first inductor disposed outside the substrate can be flexibly adjusted, so that the low noise amplifier meets the impedance matching under different working frequency bands, and the demand for low-cost wideband impedance matching is realized.

[0010] It should be understood that the general description above and the detailed description below are only exemplary and explanatory, and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort.

[0012] Figure 1 is a schematic block diagram of a radio frequency front-end module provided by an embodiment of the present application; Figure 2 is a schematic diagram of a Smith chart in the case where no microstrip line is provided; Figure 3 is a schematic diagram of a Smith chart in the case where the characteristic impedance of the microstrip line is less than or equal to 50 ohms; Figures 4a to 4c is a schematic diagram of a Smith chart corresponding to the radio frequency front-end module in some embodiments of the present application; Figure 4d and Figure 4e is a schematic diagram of S parameters of a low-noise amplifier corresponding to microstrip lines with different characteristic impedances; Figure 5 is a schematic diagram of a low-noise amplifier in some embodiments of the present application; Figures 6a to 6c is a schematic diagram of a microstrip line in some embodiments of the present application; Figures 7a to 13 is a schematic block diagram of a radio frequency front-end module and a schematic diagram of a Smith chart in some embodiments of the present application; Figure 14 is a schematic block diagram of an electronic device provided by an embodiment of the present application; Figure 15 is a schematic block diagram of an electronic device in an embodiment of the present application.

[0013] Legend of reference signs: 10, radio frequency front-end module; 11, substrate; 111, first metal layer; 112, ground layer; 113, intermediate metal layer; 1131, hollowed-out region; 114, top metal layer; 115, bottom metal layer; 101, connection port; 12, low-noise amplifier; 102, input port; 121, amplification transistor; 122, source inductor; 13, adjustment unit; S1, microstrip line; L1, first inductor; L2, second inductor; L21, first sub-inductor; L22, second sub-inductor; L3, third inductor; L4, fourth inductor; 201, signal port. DETAILED DESCRIPTION

[0014] With reference to the drawings, the technical solutions in the embodiments of the present application will be fully described below. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without creative efforts should fall within the scope of the present application.

[0015] It should be understood that the present application can be implemented in various forms and should not be interpreted as being limited to the embodiments set forth herein. On the contrary, the embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the present application to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions can be exaggerated for clarity. The same reference numerals in different drawings represent the same elements.

[0016] In order to fully understand the present application, detailed structures and steps will be described in the following description in order to illustrate the technical solutions provided by the present application. The preferred embodiments of the present application are described in detail as follows, however, in addition to these detailed descriptions, the present application can have other implementation manners.

[0017] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following embodiments and features in the embodiments can be combined with each other without conflict.

[0018] Please refer to Figure 1 , Figure 1 is a schematic block diagram of a radio frequency front-end module 10 provided by an embodiment of the present application.

[0019] As shown in Figure 1 , the radio frequency front-end module 10 includes a substrate 11, a low-noise amplifier 12, and a microstrip line S1.

[0020] The substrate 11 of the radio frequency front-end module 10 is provided with a connection port 101, which is used to be connected with a signal port 201 through a first inductor L1.

[0021] In a specific embodiment, the signal port 201 is used to transmit a radio frequency signal. For example, the signal port 201 can transmit a radio frequency signal to the connection port 101 of the radio frequency front-end module 10 through the first inductor L1. Alternatively, the signal port 201 can be used to detect the impedance of the input port 102 of the low-noise amplifier 12 In at least one embodiment, the low noise amplifier 12 is disposed on the substrate 11, and the low noise amplifier 12 includes an input port 102. A microstrip line S1 is disposed on the substrate 11, and a first end of the microstrip line S1 is connected to the connection port 101, and a second end of the microstrip line S1 is connected to the input port 102 of the low noise amplifier 12. A radio frequency signal transmitted to the connection port 101 is transmitted to the input port 102 of the low noise amplifier 12 through the microstrip line S1, and the low noise amplifier 12 is capable of amplifying the radio frequency signal input from the input port 102.

[0022] Specifically, in the embodiments of the present application, the microstrip line S1 is a microstrip line with a characteristic impedance greater than 50 ohms.

[0023] Figures 2 to 4b A Smith chart corresponding to the impedance matching network between the signal port 201 and the input port 102 of the low noise amplifier 12 is shown. Point A is the input port 102 of the low noise amplifier 12, and the impedance of point A is the input impedance of the low noise amplifier 12; point B is the connection port 101 of the radio frequency front-end module 10, and the impedance of point B is the input impedance of the connection port 101; point E is the signal port 201, and the impedance of point E is the input impedance of the signal port 201.

[0024] As shown in Figure 2 A Smith chart when only the first inductor L1 is connected between the input port 102 and the signal port 201 of the low noise amplifier 12 without the microstrip line S1 is shown. The first inductor L1 connected in series between the input port 102 and the signal port 201 mainly changes the imaginary impedance. For example, based on different operating frequency band requirements, the inductance value of the first inductor L1 can be flexibly adjusted to meet the impedance matching requirements under different operating frequency bands, achieving wideband adjustable matching. The main difference between points A and E is the imaginary impedance; the first inductor L1 does not change the real impedance, and the real impedance of points A and E is the same. For example, if the real impedance of point A is 20 ohms, the real impedance of point E is also 20 ohms. However, under normal circumstances, based on the current packaging process level and actual design requirements, there will inevitably be a microstrip line between the input port 102 and the connection port 101, and the microstrip line is usually a microstrip line with a characteristic impedance of 50 ohms. Therefore, the real impedance of the connection port 101 of the radio frequency front-end module 10 will be low, which will result in the gain of the low noise amplifier 12 not meeting the actual requirements.

[0025] As shown in Figure 3The Smith chart shown is the case of connecting a microstrip line with a characteristic impedance of 50 ohms in series between the input port 102 of the low noise amplifier 12 and the connection port 101 of the radio frequency front-end module 10. After connecting the microstrip line with a characteristic impedance of 50 ohms in series, the real part impedance of point B and the real part impedance of point E are both greatly reduced compared with the real part impedance of point A. For example, the real part impedance of point B and the real part impedance of point E are reduced to about 10 ohms, resulting in that the real part impedance of the connection port 101 of the radio frequency front-end module 10 is low after matching through the impedance matching network between the signal port 201 and the input port 102, and further resulting in that the gain of the low noise amplifier 12 cannot meet the actual demand.

[0026] Figure 4a and Figure 4b The Smith chart shown is the case of connecting a microstrip line with a characteristic impedance greater than 50 ohms in series between the connection port 101 and the input port 102 of the low noise amplifier 12.

[0027] As shown in Figure 4a For example, taking the real part impedance of point A as 20 ohms (ohm) and the microstrip line S1 as a microstrip line S1 with a characteristic impedance of 75 ohms, by connecting a microstrip line S1 with a characteristic impedance of 75 ohms in series between the input port 102 of the low noise amplifier 12 and the connection port 101 of the radio frequency front-end module 10, the real part impedance of point B can be 13 ohms and the real part impedance of point E can be 13 ohms. Compared with the real part impedance of point B and the real part impedance of point E being about 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series, the microstrip line S1 with a characteristic impedance of 75 ohms can increase the real part impedance of the connection port 101 (point B) of the radio frequency front-end module 10, and further can increase the gain of the low noise amplifier 12. When the real part impedance of the connection port 101 (point B) of the radio frequency front-end module 10 meets the actual demand (for example, high gain demand), the value of the first inductor L1 arranged outside the substrate 11 can be flexibly adjusted to achieve that the low noise amplifier 12 meets the impedance matching under different working frequency bands, and the demand for low-cost wideband impedance matching is achieved.

[0028] As shown in Figure 4bAs shown, the real part impedance of point A is 20 ohms, and the microstrip line S1 is a microstrip line with a characteristic impedance of 100 ohms. By connecting a microstrip line S1 with a characteristic impedance of 100 ohms in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the radio frequency front-end module 10, the real part impedance of point B is 15 ohms, and the real part impedance of point E is 15 ohms. Compared with the real part impedance of point B and the real part impedance of point E being about 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series, the microstrip line S1 with a characteristic impedance of 100 ohms can further increase the real part impedance of the connection port 101 (point B) of the radio frequency front-end module 10, and thus can further increase the gain of the low-noise amplifier 12.

[0029] Please refer to Figure 4c The microstrip line S1 with different characteristic impedances corresponds to different rotation directions on the Smith chart. The greater the characteristic impedance of the microstrip line S1, the steeper the rotation direction of the microstrip line S1 on the Smith chart, and the smaller the decrease in the real part impedance of point B compared with the real part impedance of point A. Please refer to Figure 4c Please refer to Figure 4a or Figure 4b By setting the microstrip line S1 to have a characteristic impedance greater than 50 ohms, the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be increased, the matching performance can be improved, and thus the gain of the low-noise amplifier 12 can be increased.

[0030] Compared with Figure 3 in which a microstrip line S1 with a characteristic impedance of 50 ohms is connected in series, Figure 4a a microstrip line S1 with a characteristic impedance of 75 ohms can make the microstrip line S1 rotate more steeply on the Smith chart, and can increase the real part impedances of points B and E to 13 ohms, increase the real part impedance of the input end impedance of the input port 102, and thus can increase the gain of the low-noise amplifier 12. Compared with Figure 3 in which a microstrip line S1 with a characteristic impedance of 50 ohms is connected in series, Figure 4b a microstrip line S1 with a characteristic impedance of 100 ohms can make the microstrip line S1 rotate more steeply on the Smith chart, can increase the real part impedances of points B and E to 15 ohms, and can further increase the real part impedance of the input end impedance of the input port 102, and thus can further increase the gain of the low-noise amplifier 12 and reduce the input return loss of the low-noise amplifier 12.

[0031] In at least one embodiment, as the characteristic impedance of the microstrip line S1 increases, the real part of the impedance of the connection port 101 of the radio frequency front-end module 10 can be made greater than the real part of the impedance of the input port 102 of the low noise amplifier 12 after a microstrip line S1 with a large characteristic impedance is connected in series between the input port 102 of the low noise amplifier 12 and the connection port 101 of the radio frequency front-end module 10. For example, if the real part of the impedance of the input port 102 of the low noise amplifier 12 is 20 ohms, after a microstrip line S1 with a large characteristic impedance (e.g., a microstrip line with a characteristic impedance greater than 120 ohms) is connected in series between the input port 102 of the low noise amplifier 12 and the connection port 101 of the radio frequency front-end module 10, the impedance of the connection port 101 of the radio frequency front-end module 10 can be greater than 20 ohms. That is, the real part of the impedance of the connection port 101 of the radio frequency front-end module 10 can be greater than the real part of the impedance of the input port 102 of the low noise amplifier 12.

[0032] In the related art, if the connection line between the input port 102 of the low noise amplifier 12 and the connection port 101 of the substrate 11 is a microstrip line with a characteristic impedance of 50 ohms, at this time, the difference between the real part impedance of the input port 102 of the low noise amplifier 12 and the real part impedance of the connection port 101 of the substrate 11 is usually greater than 10 ohms, thereby causing the real part impedance of the connection port 101 of the radio frequency front end module 10 to be too low to affect the gain and return loss performance of the low noise amplifier. The embodiment connects a microstrip line with a characteristic impedance greater than 50 ohms between the input port 102 of the low noise amplifier 12 and the connection port 101 of the substrate 11, and limits the microstrip line S1 to be configured such that the difference between the real part impedance of the connection port 101 and the real part impedance of the input port 102 of the low noise amplifier 12 is less than 10 ohms. For example, if the real part impedance of the input port 102 of the low noise amplifier 12 is 20 ohms, the real part impedance of the connection port 101 is greater than or equal to 11 ohms, for example, by setting the microstrip line S1 to a microstrip line with a characteristic impedance greater than or equal to 75 ohms, the real part impedance of the connection port 101 can be greater than or equal to 13 ohms, and by setting the microstrip line S1 to a microstrip line with a characteristic impedance greater than or equal to 100 ohms, the real part impedance of the connection port 101 can be greater than or equal to 15 ohms, thereby reducing the amplitude of the decrease in the real part impedance of the connection port 101 of the substrate 11 compared to the real part impedance of the input port 102 (point A) of the low noise amplifier 12, and thereby making the real part impedance of the connection port 101 of the radio frequency front end module 10 meet the actual demand, avoiding the real part impedance of the connection port 101 of the radio frequency front end module 10 being too low to cause the gain of the low noise amplifier 12 to be too low, achieving improved matching performance, and thereby increasing the gain of the low noise amplifier 12; and when the real part impedance of the connection port 101 (point B) of the radio frequency front end module 10 meets the high gain performance, only the value of the first inductor L1 arranged outside the substrate 11 needs to be flexibly adjusted, thereby achieving impedance matching of the low noise amplifier 12 under different working frequency bands at a lower cost.

[0033] As Figure 4d and Figure 4eFig. 6 shows a comparison between the S parameters of the microstrip line S1 with a characteristic impedance of 100 ohms connected in series between the input port 102 and the connection port 101 of the substrate 11 and the microstrip line with a characteristic impedance of 50 ohms connected in series between the input port 102 and the connection port 101 of the substrate 11, where the connection port 101 is connected to the signal port 201 through the first inductor L1. It can be determined that, compared with the microstrip line with a characteristic impedance of 50 ohms, the microstrip line S1 with a characteristic impedance greater than 50 ohms (e.g., 100 ohms) connected in series between the input port 102 and the connection port 101 of the substrate 11 can at least reduce the input return loss of the low noise amplifier 12 and increase the gain of the low noise amplifier 12 within the working frequency band of the low noise amplifier 12.

[0034] In some embodiments, when the characteristic impedance of the microstrip line S1 is large enough, the microstrip line S1 is configured such that the real part impedance of the connection port 101 is greater than the real part impedance of the input port 102 of the low noise amplifier 12. For example, the microstrip line S1 is configured such that the difference between the real part impedance of the connection port 101 and the real part impedance of the input port 102 of the low noise amplifier 12 is less than 10 ohms, and the microstrip line S1 is configured such that the real part impedance of the connection port 101 is greater than the real part impedance of the input port 102 of the low noise amplifier 12, which can increase the real part impedance of the connection port 101 of the radio frequency front end module 10, improve the matching performance, and thus increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12.

[0035] In some embodiments, the preferred application scenario of the present application is that the length of the microstrip line S1 is greater than 50 microns. In the case of a large length of the microstrip line S1, the real part impedance of point B and the real part impedance of point E are reduced more than the real part impedance of point A, which makes the real part impedance of the connection port 101 of the radio frequency front end module 10 too low. The present application can prevent the real part impedance of point B and the real part impedance of point E from being reduced too much compared with the real part impedance of point A by setting the characteristic impedance of the microstrip line S1 to be greater than 50 ohms, so as to ensure that the real part impedance of the connection port 101 of the radio frequency front end module 10 is large, and thus the gain of the low noise amplifier 12 is increased and the input return loss of the low noise amplifier 12 is reduced. It can be understood that the longer the length of the microstrip line S1, the greater the reduction of the real part impedance of point B and the real part impedance of point E compared with the real part impedance of point A, and the greater the characteristic impedance of the microstrip line S1 needs to be to ensure that the real part impedance of the connection port 101 of the radio frequency front end module 10 is not too low, and thus the high gain requirement of the low noise amplifier 12 is met.

[0036] In some embodiments, the line width of the microstrip line is less than or equal to 40 microns. Further, the line width of the microstrip line S1 is in the range of [10 microns, 30 microns]. By reducing the line width of the microstrip line S1, the characteristic impedance of the microstrip line S1 can be increased, such as to be greater than 50 ohms or even greater than 70 ohms, thereby increasing the real part of the input port impedance of the input port 102 of the low noise amplifier 12, improving the matching performance, and further increasing the gain of the low noise amplifier 12.

[0037] For example, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5. The characteristic impedance of the microstrip line S1 can be greater than 50 ohms.

[0038] Further, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3 or less than 0.2. The characteristic impedance of the microstrip line S1 can be further increased, such as to be greater than 70 ohms.

[0039] Further, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is in the range of [0.1, 0.3] or in the range of [0.2, 0.5]. The characteristic impedance of the microstrip line S1 can be further increased.

[0040] As an example, in at least one embodiment, the line width of the microstrip line S1 is less than or equal to 30 microns, the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 microns, and the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0041] For example, the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is greater than or equal to 100 microns. For example, the microstrip line S1 is disposed on the first metal layer of the substrate 11, and the distance between the first metal layer and the ground layer 112 of the substrate 11 is greater than or equal to 100 microns. Further, the distance between the first metal layer and the ground layer 112 of the substrate 11 is in the range of [100 microns, 300 microns] or in the range of [200 microns, 400 microns]. The characteristic impedance of the microstrip line S1 can be greater than 50 ohms.

[0042] For example, if the length of the microstrip line S1 is greater than 200 microns, the microstrip line S1 is a microstrip line S1 with a characteristic impedance greater than or equal to 70 ohms. In the case where the length of the microstrip line S1 is large, by increasing the characteristic impedance of the microstrip line S1, it can be prevented that the real part impedance of the point B and the real part impedance of the point E are too low compared with the real part impedance of the point A due to the microstrip line S1 being too long, so that the real part impedance of the connection port 101 of the RF front-end module 10 can be ensured to be large, and then the gain of the low noise amplifier 12 can be increased and the input return loss of the low noise amplifier 12 can be reduced.

[0043] For example, if the length of the microstrip line S1 is greater than 200 microns, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3. The characteristic impedance of the microstrip line S1 can be greater than 50 ohms. In the case where the length of the microstrip line S1 is large, by reducing the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112, the characteristic impedance of the microstrip line S1 can be increased, so that it can be prevented that the real part impedance of the point B and the real part impedance of the point E are too low compared with the real part impedance of the point A due to the microstrip line S1 being too long, so that the real part impedance of the connection port 101 of the RF front-end module 10 can be ensured to be large, and then the gain of the low noise amplifier 12 can be increased and the input return loss of the low noise amplifier 12 can be reduced.

[0044] In at least one embodiment, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 can be adjusted by adjusting the line width of the microstrip line S1 and / or adjusting the distance between the microstrip line S1 and the ground layer 112, so that the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3, and in the case where the length of the microstrip line S1 is greater than 200 microns, it can be ensured that the real part impedance of the connection port 101 (point B) of the substrate 11 and the real part impedance of the signal port (point E) are not too low.

[0045] In some embodiments, the real part impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms]. Further, the real part impedance of the connection port 101 on the substrate 11 is in the range of [20 ohms, 40 ohms], [10 ohms, 30 ohms], [30 ohms, 40 ohms]. For example, the real part impedance of the connection port 101 is 13 ohms, 15 ohms, 17 ohms, 25 ohms.

[0046] In some embodiments, as Figure 5As shown, the low noise amplifier 12 includes an amplification transistor 121 and a source inductor 122, the source of the transistor is grounded through the source inductor 122, the source inductor 122 can optimize the noise performance and impedance matching, for example, the source inductor 122 can introduce local current-voltage negative feedback, which can improve the linearity and stability of the low noise amplifier 12, for example, at the operating frequency, the source inductor 122 and the gate-source parasitic capacitance of the amplification transistor 121 can form a resonance, which can adjust the input impedance to be close to 50 ohms, and reduce the reflection loss.

[0047] In some embodiments, the amplification transistor 121 is a field effect transistor (MOS), the gate of the amplification transistor 121 is connected to the input port of the low noise amplifier chip, the source of the amplification transistor 121 is grounded through the source inductor 122, and the drain of the amplification transistor 121 is connected to the output end or the input end of the next stage amplification transistor.

[0048] Among them, the amplification transistor 121 can be one of an N-channel field effect transistor, a P-channel field effect transistor, a PNP-type transistor and an NPN-type transistor.

[0049] In some embodiments, the inductance value of the source inductor 122 is less than or equal to 1.2nH (nanohenry). Further, the inductance value of the source inductor 122 is less than or equal to 0.8nH (nanohenry). Due to the influence of the gate-source parasitic capacitance of the amplification transistor 121 in the low noise amplifier 12, the input impedance of the input port 102 of the low noise amplifier 12 is capacitive. By setting the inductance value of the source inductor 122 to be less than or equal to 1.2nH, the low noise amplifier 12 can meet the performance of high gain. For example, when the gain of the low noise amplifier 12 is greater than or equal to 16dBm (milliwatt decibel), the inductance value of the source inductor 122 is in the range of [0.4nH, 1.2nH]. Further, the inductance value of the source inductor 122 is in the range of [0.4nH, 0.8nH]. For example, the inductance value of the source inductor 122 is 0.8nH.

[0050] But in the case of not considering the Miller effect, according to the simplified formula Re = gm x LS ÷ Cgs, wherein Re represents the real part impedance of the input impedance of the low noise amplifier 12, gm represents the transconductance of the amplification transistor 121, LS represents the inductance value of the source inductor 122, and Cgs represents the capacitance value of the gate-source parasitic capacitance of the amplification transistor 121, it can be determined that the inductance value of the source inductor 122 is less than or equal to 1.2 nH, which makes the real part impedance of the input port 102 of the low noise amplifier 12 less than 50 ohms, for example, the real part impedance of the input port 102 of the low noise amplifier 12 is 20 ohms. For example, the ratio of the gate-source parasitic capacitance of the amplification transistor 121 to the inductance value of the source inductor 122 is less than 0.4, which makes the real part impedance of the input port 102 of the low noise amplifier 12 smaller, and further makes the real part impedance of the connection port 101 of the radio frequency front-end module 10 smaller. For example, the gate-source parasitic capacitance of the amplification transistor 121 is in the range of [100 pF, 300 pF], for example, the gate-source parasitic capacitance of the amplification transistor 121 is 200 pF. It also makes the real part impedance of the input port 102 of the low noise amplifier 12 smaller, and further makes the real part impedance of the connection port 101 of the radio frequency front-end module 10 smaller. The embodiment of the present application can set the characteristic impedance of the microstrip line S1 to be greater than 50 ohms, which can improve the real part impedance of the connection port 101 of the radio frequency front-end module 10, improve the matching performance, and further increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12.

[0051] In some embodiments, as Figure 6aAs shown, the substrate 11 includes a first metal layer 111, which can be a top metal layer 114 of the substrate 11, or can also be a second layer metal layer located adjacent below the top metal layer 114, and is not limited thereto. The microstrip line S1 is disposed on the first metal layer 111, and at least one intermediate metal layer 113 is further included between the first metal layer 111 and the ground layer 112 of the substrate 11, and the region where the microstrip line S1 projects onto the at least one intermediate metal layer 113 is a hollowed-out region 1131. For example, by setting the hollowed-out region 1131 in the metal layer below the microstrip line S1, the parasitic capacitance of the microstrip line S1 can be reduced, so that the characteristic impedance of the microstrip line S1 can be increased, such as being greater than 50 ohms or even greater than 70 ohms, so that the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be increased, the matching performance can be improved, and thus the gain of the low-noise amplifier 12 can be increased and the input return loss of the low-noise amplifier 12 can be reduced; and when the real part impedance of the connection port 101 (B point) in the radio frequency front-end module 10 meets the actual demand (such as high gain demand), the value of the first inductor L1 disposed outside the substrate 11 can be flexibly adjusted, so as to realize the impedance matching of the low-noise amplifier 12 under different working frequency bands, and realize the demand of low-cost wideband impedance matching.

[0052] In some embodiments, the substrate 11 includes a first metal layer 111, and the microstrip line S1 is disposed on the first metal layer 111, and the distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 microns. By increasing the distance between the microstrip line S1 and the ground layer 112, the parasitic capacitance of the microstrip line S1 can be reduced, so that the characteristic impedance of the microstrip line S1 can be increased, such as being greater than 50 ohms or even greater than 70 ohms, so that the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be increased, the matching performance can be improved, and thus the gain of the low-noise amplifier 12 can be increased and the input return loss of the low-noise amplifier 12 can be reduced.

[0053] In some embodiments, as shown in Figure 6b or Figure 6c The substrate 11 has opposite top and bottom metal layers 114 and 115, and a plurality of metal layers are further included between the top and bottom metal layers 114 and 115, and the plurality of metal layers are spaced apart along the direction in which the top metal layer 114 extends to the bottom metal layer 115. As shown in Figure 6b The microstrip line S1 is formed on the top metal layer 114 of the substrate 11, or, as shown in Figure 6cAs shown, the distance between the metal layer forming the microstrip line S1 and the top metal layer 114 of the substrate 11 is smaller than the distance between the metal layer forming the microstrip line S1 and the bottom metal layer 115 of the substrate 11. By increasing the distance between the microstrip line S1 and the bottom metal layer 115, the parasitic capacitance of the microstrip line S1 can be reduced, thereby improving the characteristic impedance of the microstrip line S1. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms or even greater than 70 ohms, thereby increasing the real impedance of the connection port 101 of the RF front-end module 10 and improving the matching performance, thereby increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the low-noise amplifier 12.

[0054] For example, the bottom metal layer 115 of the substrate 11 is the ground layer 112; by increasing the distance between the microstrip line S1 and the ground layer 112, the parasitic capacitance of the microstrip line S1 can be reduced, thereby increasing the characteristic impedance of the microstrip line S1, thereby increasing the real impedance of the connection port 101 of the RF front-end module 10, improving the matching performance, and further increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12.

[0055] In some embodiments, as Figures 7a to 7c As shown, the RF front-end module 10 further includes a second inductor L2 . The second inductor L2 and a microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12 .

[0056] like Figure 7a As shown in FIG, the first end of the microstrip line S1 is connected to the connection port 101 via the second inductor L2; or, as shown in FIG b, the second end of the microstrip line S1 is connected to the input port 102 of the low-noise amplifier 12 via the second inductor L2; or, as shown in FIG c, the second inductor L2 includes a first sub-inductor L21 and a second sub-inductor L22, the first end of the microstrip line S1 is connected to the connection port 101 via the first sub-inductor L21, and the second end of the microstrip line S1 is connected to the input port 102 of the low-noise amplifier 12 via the second sub-inductor L22. The second inductor L2 and the microstrip line S1 can be connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12.

[0057] For example, the second inductor L2 includes one or more of the following: a metal trace inductor, a surface mount device (SMD) inductor, and a bonding wire.

[0058] For example, the substrate 11 includes a metal layer, and the second inductor L2 is wound on the metal layer of the substrate 11 through a metal trace. Optionally, the metal layer forming the metal trace inductor and the metal layer forming the microstrip line S1 can be the same metal layer or different metal layers.

[0059] For example, the second end of the microstrip line S1 is connected to the input port 102 of the low noise amplifier 12 through the second inductor L2. Referring to Figure 7d By connecting the second inductor L2 and the microstrip line S1 in series between the connection port 101 and the input port 102 of the low noise amplifier 12, the real part impedance of the points B and E can reach 15 ohms. Compared with the real part impedance of the point B and the real part impedance of the point E of about 10 ohms when a microstrip line with a characteristic impedance equal to 50 ohms is connected in series and the second inductor L2 is not connected in series, the second inductor L2 can improve the real part impedance of the connection port 101 of the radio frequency front end module 10, improve the matching performance, and thus increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12.

[0060] For example, when the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12, the inductance value of the first inductor L1 can be less than or equal to 10 nanohenry. When the radio frequency front end module 10 further includes the second inductor L2, the real part impedance of the connection port 101 of the radio frequency front end module 10 can be improved, and the imaginary part impedance of the connection port 101 can also be reduced, so that the impedance matching can be achieved by using a first inductor L1 with a smaller inductance value. For example, when the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12, and the characteristic impedance of the microstrip line S1 is greater than 70 ohms, such as 75 ohms, the real part impedance of the input port 102 can be 17 ohms, and the imaginary part impedance of the input port 102 can be 0. In this case, the first inductor L1 can use a component with a smaller inductance value, for example, the first inductor L1 can use a resistor with 0 ohms.

[0061] Referring to Figure 8a and Figure 8b When the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12, and the characteristic impedance of the microstrip line S1 is greater than 70 ohms, the point C represents the connection port 101 or the signal port 201 when the first inductor L1 uses a resistor with 0 ohms or when no inductor is connected between the connection port 101 and the signal port 201 of the radio frequency front end module 10, but a wire or a bonding wire is directly connected. According to the Smith chart shown in Figure 8b , it can be determined that the second inductor L2 and the microstrip line S1 can improve the real part impedance of the connection port 101 of the radio frequency front end module 10, improve the matching performance, and thus increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12.

[0062] In some embodiments, asFigure 9a The radio frequency front-end module 10 further includes a third inductor L3, and the first end of the microstrip line S1 is grounded through the third inductor L3. Alternatively, as shown in FIG. 2B, the radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4. Figure 9b The radio frequency front-end module 10 further includes a third inductor L3, and the first end of the microstrip line S1 is grounded through the third inductor L3. Alternatively, as shown in FIG. 2B, the radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4. Figure 9c The radio frequency front-end module 10 further includes a third inductor L3, and the first end of the microstrip line S1 is grounded through the third inductor L3. Alternatively, as shown in FIG. 2B, the radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0063] Optionally, the third inductor L3 includes one or more of the following: a metal trace inductor, a surface mount inductor, a bonding wire. Optionally, the third inductor L3 can be wound on the metal layer of the substrate 11 through a metal trace.

[0064] Please refer to Figure 9a Referring to Figure 9d By grounding the first end of the microstrip line S1 through the third inductor L3, the real part impedance of the points B and E can reach 25 ohms; compared with the real part impedance of the point B and the real part impedance of the point E being about 10 ohms when a microstrip line with a characteristic impedance equal to 50 ohms is connected in series and no third inductor L3 is provided, the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be improved by providing the third inductor L3, the matching performance is improved, and thus the gain of the low-noise amplifier 12 can be increased and the input return loss of the low-noise amplifier 12 can be reduced.

[0065] For example, in the case where the first end of the microstrip line S1 is grounded through the third inductor L3 and / or the second end of the microstrip line S1 is grounded through the fourth inductor L4, the inductance value of the first inductor L1 can be less than or equal to 10 nanohenry. In the case where the radio frequency front-end module 10 further includes the third inductor L3 and / or the fourth inductor L4, the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be improved, and the imaginary part impedance of the connection port 101 can also be reduced, so that impedance matching can be achieved using a first inductor L1 with a smaller inductance value. At this time, the first inductor L1 can use a component with a smaller inductance value, for example, the first inductor L1 can use a resistor with a resistance of 0 ohms.

[0066] For example, as shown in FIG. 2B, the radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4. Figure 9eAs shown, the radio frequency front-end module 10 further comprises a second inductor L2, the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12; and the radio frequency front-end module 10 further comprises a third inductor L3, a first end of the second inductor L2 is grounded through the third inductor L3, and / or the radio frequency front-end module 10 further comprises a fourth inductor L4, a second end of the second inductor L2 is grounded through the fourth inductor L4. The real part impedance of the connection port 101 of the radio frequency front-end module 10 can be further improved, the matching performance is improved, and then the gain of the low noise amplifier 12 can be increased and the input return loss of the low noise amplifier 12 can be reduced; and when the real part impedance of the connection port 101 (B point) in the radio frequency front-end module 10 meets the actual demand (for example, high gain demand), the value of the first inductor L1 arranged outside the substrate 11 can be flexibly adjusted, so that the low noise amplifier 12 meets the impedance matching under different working frequency bands, and the wideband impedance matching demand with lower cost is realized.

[0067] In some embodiments, the radio frequency front-end module 10 and the signal port 201 are arranged on a support plate, for example, a circuit board in an electronic device, or can be a bare circuit board. The signal port 201 can be used to connect an antenna, for example, when the support plate is a circuit board in an electronic device, the signal port 201 connects an antenna of the electronic device; or the signal port 201 can be a test port, for example, when the support plate is a test circuit board or can be referred to as an evaluation board (EVB), a test signal can be input to the signal port 201 to test the performance of the radio frequency front-end module 10; or the signal port can also be connected to other circuits in the later stage for transmitting radio frequency signals.

[0068] In some embodiments, please refer to the foregoing embodiments Figure 10 , the connection port 101 of the radio frequency front-end module 10 is connected to an interface 202 on the support plate through a connection line, and the interface 202 is connected to the signal port 201 through the first inductor L1.

[0069] The RF front-end module 10 provided in an embodiment of the present application has a connection port 101 for connecting to a signal port 201 via a first inductor L1. The RF front-end module 10 includes a substrate 11, a low-noise amplifier 12, and a microstrip line S1. The substrate 11 is provided with the connection port 101. The low-noise amplifier 12 is disposed on the substrate 11. The low-noise amplifier 12 includes an input port 102. The microstrip line S1 is disposed on the substrate 11. A first end of the microstrip line S1 is connected to the connection port 101, and a second end of the microstrip line S1 is connected to the input port 102 of the low-noise amplifier 12. The microstrip line S1 is a microstrip line with a characteristic impedance greater than 50 ohms. By connecting a microstrip line with a characteristic impedance greater than 50 ohms in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, the matching performance can be improved, and the gain of the low-noise amplifier 12 can be increased and the input return loss of the noise amplifier 12 can be reduced.

[0070] In some embodiments, the characteristic impedance of the microstrip line S1 can be increased by reducing the line width of the microstrip line S1 and / or increasing the distance between the microstrip line S1 and the ground layer 112 of the substrate 11. For example, the characteristic impedance of the microstrip line S1 can be greater than 50 ohms, for example, greater than 70 ohms.

[0071] In some embodiments, the projected area corresponding to the microstrip line S1 on the intermediate metal layer 113 may be hollowed out to increase the characteristic impedance of the microstrip line S1 , for example, to make the characteristic impedance of the microstrip line S1 greater than 50 ohms, such as greater than 70 ohms.

[0072] By reducing the line width of the microstrip line S1, increasing the distance between the microstrip line S1 and the ground layer 112 of the substrate 11, or hollowing out the projection area corresponding to the microstrip line S1 on the intermediate metal layer 113, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms, for example, greater than 70 ohms, thereby increasing the real part of the input impedance of the low-noise amplifier 12, thereby improving the matching performance.

[0073] In some embodiments, the real part impedance of the connection port 101 of the radio frequency front-end module 10 can be increased, the matching performance can be improved, and thus the gain of the low-noise amplifier 12 can be increased and the input return loss of the low-noise amplifier 12 can be reduced, by connecting the second inductor L2 in series between the connection port 101 and the input port 102 of the low-noise amplifier 12, and / or grounding one end of the microstrip line S1 by the third inductor L3, and / or grounding the other end of the microstrip line S1 by the fourth inductor L4. When the real part impedance of the connection port 101 (B point) in the radio frequency front-end module 10 meets the actual demand (for example, the high gain demand), the low-noise amplifier 12 can meet the impedance matching under different working frequency bands by flexibly adjusting the value of the first inductor L1 arranged outside the substrate 11, and the wide frequency impedance matching demand with lower cost can be realized.

[0074] In some embodiments, the embodiments of the present application can be applied to the radio frequency front-end module 10 with large gain of the low-noise amplifier 12 and low real part impedance of the input port 102 of the low-noise amplifier 12. The real part impedance of the connection port 101 of the radio frequency front-end module 10 can be increased, the matching performance can be improved, and thus the gain of the low-noise amplifier 12 can be increased and the input return loss of the low-noise amplifier 12 can be reduced, by one or more of the microstrip line with characteristic impedance greater than 50 ohms, the second inductor L2, the third inductor L3, and the fourth inductor L4.

[0075] Please refer to Figure 11 As shown in Figure 11 is a schematic diagram of a radio frequency front-end module 10 provided by another embodiment of the present application.

[0076] As shown in Figure 1 , the radio frequency front-end module 10 comprises: a substrate 11, the substrate 11 being provided with a connection port 101; a low-noise amplifier 12, the low-noise amplifier 12 being arranged on the substrate 11, and the low-noise amplifier 12 comprising an input port 102; a microstrip line S1, the microstrip line S1 being arranged on the substrate 11, a first end of the microstrip line S1 being connected to the connection port 101, and a second end of the microstrip line S1 being connected to the input port 102 of the low-noise amplifier 12.

[0077] The ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5.

[0078] The ratio of the line width of the microstrip line S1 and the distance between the microstrip line S1 and the ground layer 112 can be increased to increase the characteristic impedance of the microstrip line S1, for example, the characteristic impedance of the microstrip line S1 can be greater than 50 ohms, so as to increase the real part impedance of the connection port 101 of the radio frequency front end module 10, improve the matching performance, and then increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12.

[0079] Optionally, the length of the microstrip line S1 is greater than 50 microns.

[0080] Optionally, the line width of the microstrip line is less than or equal to 40 microns.

[0081] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, and at least one intermediate metal layer 113 is further included between the first metal layer 111 and the ground layer 112 of the substrate 11, and the area of the microstrip line S1 projected onto the at least one intermediate metal layer 113 is a hollow area 1131.

[0082] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, and the distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 microns.

[0083] Optionally, if the length of the microstrip line S1 is greater than 200 microns, the ratio of the line width of the microstrip line S1 and the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0084] Optionally, the low noise amplifier 12 includes an amplification transistor 121 and a source inductor 122, the source of the transistor is grounded through the source inductor 122, and the inductance value of the source inductor 122 is less than or equal to 1.2 nH (nanohenry).

[0085] Optionally, the ratio of the gate-source parasitic capacitance of the amplification transistor 121 and the inductance value of the source inductor 122 is less than 0.4.

[0086] Optionally, the real part impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms].

[0087] Optionally, the radio frequency front end module 10 further includes a second inductor L2, the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12.

[0088] Optionally, the radio frequency front end module 10 further includes a third inductor L3, the first end of the microstrip line S1 is grounded through the third inductor L3; and / or The radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0089] The specific principle and implementation of the radio frequency front-end module 10 provided by the embodiment of the present application is similar to that of the radio frequency front-end module 10 of the foregoing embodiment, and will not be described here. The parts not mentioned in the embodiment of the present application can refer to the related description of the foregoing embodiment, and will not be described here.

[0090] Please refer to Figure 12 As Figure 12 shown is a schematic diagram of a radio frequency front-end module 10 provided by another embodiment of the present application.

[0091] As Figure 12 shown, the radio frequency front-end module 10 includes: a substrate 11, the substrate 11 being provided with a connection port 101; a low-noise amplifier 12, the low-noise amplifier 12 being disposed on the substrate 11, and the low-noise amplifier 12 including an input port 102; an adjusting unit 13, the adjusting unit 13 including a microstrip line S1 and a second inductor L2 connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12; The microstrip line S1 is disposed on the substrate 11.

[0092] The radio frequency front-end module 10 of the embodiment of the present application can improve the real part impedance of the connection port 101 of the radio frequency front-end module 10, improve the matching performance, and thus increase the gain of the low-noise amplifier 12 and reduce the input return loss of the low-noise amplifier 12, by connecting the second inductor L2 and the microstrip line S1 in series between the connection port 101 and the input port 102 of the low-noise amplifier 12. In the embodiment of the present application, the characteristic impedance of the microstrip line S1 can be greater than 50 ohms, or can also be less than or equal to 50 ohms.

[0093] Optionally, if the length of the microstrip line S1 is greater than 50 microns, then the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5.

[0094] Optionally, if the length of the microstrip line S1 is greater than 200 microns, then the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0095] Optionally, the low-noise amplifier 12 includes an amplification transistor 121 and a source inductor 122, the source of the transistor being grounded through the source inductor 122, and the inductance value of the source inductor 122 being less than or equal to 1.2 nH (nanohenry).

[0096] Optionally, a ratio of a gate-source parasitic capacitance of the amplification transistor 121 to an inductance value of the source inductor 122 is less than 0.4.

[0097] Optionally, a real part impedance of the connection port 101 on the substrate 11 is in a range of [10 ohms, 40 ohms].

[0098] Optionally, a line width of the microstrip line is less than or equal to 40 microns.

[0099] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, at least one intermediate metal layer 113 is further included between the first metal layer 111 and a ground layer 112 of the substrate 11, and a region of the microstrip line S1 projected onto the at least one intermediate metal layer 113 is a hollowed-out region 1131.

[0100] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, and a distance between the first metal layer 111 and a ground layer 112 of the substrate 11 is greater than or equal to 100 microns.

[0101] Optionally, the radio frequency front-end module 10 further includes a third inductor L3, and the first end of the microstrip line S1 is grounded through the third inductor L3; and / or The radio frequency front-end module 10 further includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0102] The specific principle and implementation manner of the radio frequency front-end module 10 provided by the embodiment of the present application are similar to those of the radio frequency front-end module 10 of the foregoing embodiment, and details are not described herein again. Moreover, parts not mentioned in the embodiment of the present application can refer to the related description of the foregoing embodiment, and details are not described herein again.

[0103] Please refer to Figure 13 As shown in Figure 13 a schematic diagram of a radio frequency front-end module 10 provided by another embodiment of the present application.

[0104] As shown in Figure 13 The radio frequency front-end module 10 includes: a substrate 11, the substrate 11 being provided with a connection port 101; a low-noise amplifier 12, the low-noise amplifier 12 being arranged on the substrate 11, and the low-noise amplifier 12 including an input port 102; an adjustment unit 13, the adjustment unit 13 including a microstrip line S1 and a third inductor L3 and / or a fourth inductor L4, wherein the third inductor L3 grounds a first end of the microstrip line S1, and the fourth inductor L4 grounds a second end of the microstrip line S1; the microstrip line S1 being arranged on the substrate 11.

[0105] The radio frequency front end module 10 can improve the real part impedance of the connection port 101, improve the matching performance, and then increase the gain of the low noise amplifier 12 and reduce the input return loss of the low noise amplifier 12 by grounding the first end of the microstrip line S1 through the third inductor L3 and / or grounding the second end of the microstrip line S1 through the fourth inductor L4.

[0106] Optionally, if the length of the microstrip line S1 is greater than 50 microns, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5.

[0107] Optionally, if the length of the microstrip line S1 is greater than 200 microns, the ratio of the line width of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0108] Optionally, the low noise amplifier 12 includes an amplification transistor 121 and a source inductor 122, the source of the transistor is grounded through the source inductor 122, and the inductance value of the source inductor 122 is less than or equal to 1.2 nH (nanohenry).

[0109] Optionally, the ratio of the gate-source parasitic capacitance of the amplification transistor 121 to the inductance value of the source inductor 122 is less than 0.4.

[0110] Optionally, the real part impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms].

[0111] Optionally, when the gain of the low noise amplifier 12 is greater than or equal to 16 dBm (milliwatt decibel), the inductance value of the source inductor 122 is in the range of [0.4 nH, 1.2 nH].

[0112] Optionally, the line width of the microstrip line is less than or equal to 40 microns.

[0113] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, and at least one intermediate metal layer 113 is further included between the first metal layer 111 and the ground layer 112 of the substrate 11, and the area of the microstrip line S1 projected onto the at least one intermediate metal layer 113 is a hollow area 1131.

[0114] Optionally, the substrate 11 includes a first metal layer 111, the microstrip line S1 is arranged on the first metal layer 111, and the distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 microns.

[0115] Optionally, the radio frequency front-end module 10 further comprises a second inductor L2, the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12.

[0116] Optionally, the substrate 11 of the radio frequency front-end module 10 is provided with the connection port 101, and the connection port 101 is used to be connected with the signal port 201 through the first inductor L1. When the real part impedance of the connection port 101 (B point) in the radio frequency front-end module 10 meets the actual demand (for example, the high gain demand), the value of the first inductor L1 arranged outside the substrate 11 can be flexibly adjusted, so as to realize that the low noise amplifier 12 meets the impedance matching under different working frequency bands, and the wide frequency impedance matching demand with lower cost is realized.

[0117] The specific principle and implementation manner of the radio frequency front-end module 10 provided by the embodiment of the application are similar to those of the radio frequency front-end module 10 of the foregoing embodiment, and details are not described herein again. The parts not mentioned in the embodiment of the application can refer to the related description of the foregoing embodiment, and details are not described herein again.

[0118] Please refer to Figure 14 As shown in Figure 14 is a schematic block diagram of an electronic device provided by another embodiment of the application. The electronic device comprises the radio frequency front-end module 10 of any one of the foregoing embodiments.

[0119] In some embodiments, as shown in Figure 15 , the electronic device further comprises a support plate, the radio frequency front-end module 10 is arranged on the support plate, and the support plate is provided with the signal port 201, so that the connection port 101 of the radio frequency front-end module 10 is connected with the signal port 201.

[0120] In some embodiments, the support plate is a test circuit board or can be called an evaluation board (EVB), and a test signal can be input to the signal port 201 to test the performance of the radio frequency front-end module 10.

[0121] In some embodiments, the electronic device further comprises a first inductor L1, a first end of the first inductor L1 is connected with the signal port 201, and a second end of the first inductor L1 is connected with the connection port 101 of the radio frequency front-end module 10.

[0122] When the real part impedance of the connection port 101 (B point) in the radio frequency front-end module 10 meets the actual demand (for example, the high gain demand), the value of the first inductor L1 arranged outside the substrate 11 can be flexibly adjusted, so as to realize that the low noise amplifier 12 meets the impedance matching under different working frequency bands, and the wide frequency impedance matching demand with lower cost is realized.

[0123] The electronic device can be a mobile phone, a tablet computer, a vehicle terminal, or the like communication device, and of course, can also be other communication devices with communication functions, and the embodiments of the present application do not limit the specific types of the electronic device.

[0124] The specific principles and implementation manners of the electronic device provided by the embodiments of the present application are similar to the radio frequency front-end module of the foregoing embodiments, and will not be described herein. The parts not mentioned in the embodiments of the present application can refer to the related descriptions of the foregoing embodiments, and will not be described herein.

[0125] It should be understood that the terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit the application.

[0126] It should be understood that when an element or layer is referred to as being "on", "adjacent", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected to", or "directly coupled to" another element or layer, then there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, the first element, component, region, layer or section discussed below can be represented as the second element, component, region, layer or section without departing from the teachings of the present application.

[0127] Spatial relationship terms such as "under", "below", "lower", "underneath", "on", "upper" and the like can be used herein for the convenience of description to describe the relationship between one element or feature and other elements or features shown in the drawings. It should be understood that in addition to the orientation shown in the drawings, the spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, then the element or feature described as "under" or "below" or "under" the other element will be oriented "on" the other element or feature. Therefore, the exemplary terms "under" and "below" can include both the upper and lower orientations. The device can be additionally oriented (rotated 90 degrees or other orientations), and the spatial description used herein is interpreted accordingly.

[0128] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0129] The above description is embodied in a specific embodiment of the application, but the scope of protection of the application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the application, and these modifications or replacements should be covered by the scope of protection of the application. Therefore, the scope of protection of the application should be subject to the scope of protection of the claims.

Claims

1. A radio frequency front-end module, characterized in that: The connection port of the radio frequency front-end module is connected to the signal port through a first inductor, and the radio frequency front-end module comprises: a substrate provided with the connection port; a low-noise amplifier disposed on the substrate, the low-noise amplifier comprising an input port; a microstrip line disposed on the substrate, a first end of the microstrip line being connected to the connection port, and a second end of the microstrip line being connected to the input port of the low-noise amplifier; the microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms.

2. The radio frequency front-end module of claim 1, wherein, The length of the microstrip line is greater than 50 microns.

3. The radio frequency front-end module of claim 1, wherein, The ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

4. The radio frequency front-end module of claim 1, wherein, The line width of the microstrip line is less than or equal to 40 microns.

5. The radio frequency front end module of claim 1, wherein, The microstrip line is disposed on a first metal layer, and the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 microns.

6. The radio frequency front-end module of claim 1, wherein, If the length of the microstrip line is greater than 200 microns, the microstrip line is a microstrip line with a characteristic impedance greater than or equal to 70 ohms.

7. The radio frequency front end module of claim 1, wherein, If the length of the microstrip line is greater than 200 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

8. The radio frequency front-end module of claim 1, wherein, The real part impedance of the connection port on the substrate is in the range of [10 ohms, 40 ohms].

9. The radio frequency front-end module of claim 1, wherein, The low-noise amplifier comprises an amplification transistor and a source inductor, and the source of the amplification transistor is grounded through the source inductor. The inductance value of the source inductor is less than or equal to 1.2nH.

10. The radio frequency front end module of claim 9, wherein, When the gain of the low-noise amplifier is greater than or equal to 16dBm, the inductance value of the source inductor is in the range of [0.4nH, 1.2nH].

11. The radio frequency front end module of claim 9, wherein, The ratio of the gate-source parasitic capacitance of the amplification transistor to the inductance value of the source inductor is less than 0.

4.

12. The radio frequency front end module of claim 9, wherein, The gate-source parasitic capacitance of the amplification transistor is in the range of [100pF, 300pF].

13. The radio frequency front-end module of any one of claims 1-12, wherein, The substrate comprises a first metal layer, the microstrip line is disposed on the first metal layer, and at least one intermediate metal layer is further included between the first metal layer and the ground layer of the substrate, and the area of the microstrip line projected onto the at least one intermediate metal layer is a hollow area.

14. The radio frequency front-end module of any one of claims 1-12, wherein, The radio frequency front-end module further comprises a second inductor, and the second inductor and the microstrip line are connected in series between the connection port and the input port of the low-noise amplifier.

15. The radio frequency front end module of claim 14, wherein, The first end of the microstrip line is connected to the connection port through the second inductor, or The second end of the microstrip line is connected to the input port of the low-noise amplifier through the second inductor, or The second inductor comprises a first sub-inductor and a second sub-inductor, the first end of the microstrip line is connected to the connection port through the first sub-inductor, and the second end of the microstrip line is connected to the input port of the low-noise amplifier through the second sub-inductor.

16. The radio frequency front end module of claim 14, wherein, The second inductor comprises one or more of the following: a metal trace inductor, a surface mount inductor, a bonding wire.

17. The radio frequency front end module of claim 14, wherein, The substrate comprises a metal layer, and the second inductor is wound on the metal layer of the substrate by metal trace. The inductance value of the first inductor is less than or equal to 10 nanohenry.

18. The radio frequency front end module of claim 14, wherein, ​ 19. The radio frequency front end module of claim 14, wherein, The radio frequency front-end module further includes a third inductor, a first end of the second inductor is grounded through the third inductor, and / or, The radio frequency front-end module further includes a fourth inductor, a second end of the second inductor is grounded through the fourth inductor.

20. The radio frequency front-end module of any one of claims 1-12, wherein, The radio frequency front-end module further includes a third inductor, a first end of the microstrip line is grounded through the third inductor; and / or The radio frequency front-end module further includes a fourth inductor, a second end of the microstrip line is grounded through the fourth inductor.

21. The radio frequency front end module of claim 20, wherein, The third inductor includes one or more of the following: a metal trace inductor, a surface mount inductor, a bonding wire.

22. The radio frequency front-end module of any one of claims 1-12, wherein, The substrate has opposite top and bottom metal layers, and a plurality of metal layers are further included between the top and bottom metal layers, and the plurality of metal layers are arranged at intervals along a direction in which the top metal layer extends to the bottom metal layer; The microstrip line is formed on the top metal layer of the substrate, or, The distance between the metal layer forming the microstrip line and the top metal layer of the substrate is less than the distance between the metal layer forming the microstrip line and the bottom metal layer of the substrate.

23. The radio frequency front end module of claim 22, wherein, The bottom metal layer of the substrate is a ground layer.

24. A radio frequency front end module, comprising: The radio frequency front-end module includes: A substrate, the substrate is provided with a connection port; A low-noise amplifier, the low-noise amplifier is arranged on the substrate, and the low-noise amplifier includes an input port; A microstrip line, the microstrip line is arranged on the substrate, a first end of the microstrip line is connected with the connection port, and a second end of the microstrip line is connected with the input port of the low-noise amplifier; The ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

25. The radio frequency front end module of claim 24, wherein, The length of the microstrip line is greater than 50 microns.

26. The radio frequency front end module of claim 25, wherein, The line width of the microstrip line is less than or equal to 40 microns.

27. The radio frequency front end module of claim 25, wherein, The microstrip line is arranged on a first metal layer, and the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 microns.

28. The radio frequency front end module of claim 25, wherein, If the length of the microstrip line is greater than 200 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

29. The radio frequency front-end module of any one of claims 24-28, wherein, The low-noise amplifier includes an amplification transistor and a source inductor, and the source of the transistor is grounded through the source inductor; The inductance value of the source inductor is less than or equal to 1.2nH.

30. The radio frequency front end module of claim 29, wherein, The ratio of the gate-source parasitic capacitance of the amplification transistor to the inductance value of the source inductor is less than 0.

4.

31. The radio frequency front-end module of any one of claims 24-28, wherein, The real part impedance of the connection port on the substrate is in the range of [10 ohms, 40 ohms].

32. A radio frequency front end module, comprising: The radio frequency front-end module includes: A substrate, the substrate is provided with a connection port; A low-noise amplifier, the low-noise amplifier is arranged on the substrate, and the low-noise amplifier includes an input port; An adjustment unit, the adjustment unit includes a microstrip line and a second inductor connected in series between the connection port and the input port of the low-noise amplifier; The microstrip line is arranged on the substrate.

33. The radio frequency front end module of claim 32, wherein, If the length of the microstrip line is greater than 50 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

34. The radio frequency front end module of claim 32, wherein, If the length of the microstrip line is greater than 200 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

35. The radio frequency front-end module of any one of claims 32-34, wherein, The low noise amplifier includes an amplification transistor and a source inductor, and the source of the transistor is grounded through the source inductor. The inductance value of the source inductor is less than or equal to 1.2nH.

36. The radio frequency front end module of claim 35, wherein, The ratio of the gate-source parasitic capacitance of the amplification transistor to the inductance value of the source inductor is less than 0.

4.

37. A radio frequency front end module, comprising: The radio frequency front end module includes: A substrate provided with a connection port; A low noise amplifier disposed on the substrate, the low noise amplifier including an input port; An adjustment unit including a microstrip line and a third inductor and / or a fourth inductor, wherein the third inductor grounds the first end of the microstrip line, and the fourth inductor grounds the second end of the microstrip line; The microstrip line is disposed on the substrate.

38. The radio frequency front end module of claim 37, wherein, If the length of the microstrip line is greater than 50 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

39. The radio frequency front end module of claim 37, wherein, If the length of the microstrip line is greater than 200 microns, the ratio of the line width of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

40. The radio frequency front-end module of any one of claims 37-39, wherein, The low noise amplifier includes an amplification transistor and a source inductor, and the source of the transistor is grounded through the source inductor. The inductance value of the source inductor is less than or equal to 1.2nH.

41. The radio frequency front end module of claim 40, wherein, When the gain of the low noise amplifier is greater than or equal to 16dBm, the inductance value of the source inductor is in the range of [0.4nH, 1.2nH].

42. An electronic device, comprising: The electronic device includes the radio frequency front end module of any one of claims 1 to 41.

43. The electronic device of claim 42, wherein, The electronic device further includes a support plate, the radio frequency front end module is disposed on the support plate, and the support plate is provided with a signal port, so that the connection port of the radio frequency front end module is connected with the signal port.

44. The electronic device of claim 43, wherein, The support plate is an evaluation board.

45. The electronic device of claim 42, wherein, The electronic device further includes a first inductor, a first end of the first inductor is connected with the signal port, and a second end of the first inductor is connected with the connection port of the radio frequency front end module.

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