Preparation method of high-performance perovskite memristor

Abstract

The invention relates to the technical field of perovskite material memristors, in particular to a preparation method of a high-performance perovskite memristor, which comprises the following steps of: preparing an FA0.1 MA0. 9PbI3 solution of a polyvinylidene fluoride solution and a PMMA (Polymethyl Methacrylate) solution, selecting ITO (Indium Tin Oxide) glass with a preset size as a substrate through ultrasonic cleaning, drying and hydrophilic treatment, sequentially spin-coating PEDOT: PSS, the FA0.1 MA0. 9PbI3 containing polyvinylidene fluoride and the PMMA solution, and preparing the high-performance perovskite memristor. Finally, a mask plate is covered, a top electrode is subjected to thermal evaporation, through introduction of polyvinylidene fluoride, polar groups such as fluorine atoms exist on molecular chains of polyvinylidene fluoride, interface charge transmission is regulated and controlled, the carrier mobility is improved, and polyvinylidene fluoride can serve as an additive to improve the stability and on-off ratio performance of the perovskite memristor; the preparation process and parameters are strictly controlled, so that the consistency and repeatability of the performance are ensured; meanwhile, the research on the interaction between the polyvinylidene fluoride and the perovskite provides a new view angle for a resistance change mechanism, and is beneficial to deeply understanding and optimizing the performance of the device.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of perovskite material memristor, and in particular to a preparation method of a high-performance perovskite memristor. BACKGROUND

[0002] The perovskite memristor is a memristor device based on a perovskite material, and the core characteristic is to realize non-volatile resistance switching by regulating the resistance state of the material through an external electrical signal, so as to simulate the plasticity of a biological synapse and be applied to the fields of neuromorphic computing and memory.

[0003] Although the perovskite memristor has developed rapidly, breakthroughs have been made in performance improvement, indicators such as switching speed and switching ratio have been continuously optimized, and application fields have been continuously expanded, showing great potential in information storage, neuromorphic computing, physical encryption and the like. Meanwhile, the material and preparation technology are continuously developed, and new material systems and preparation methods are continuously emerging.

[0004] However, its development also faces many challenges, including poor material stability, easy performance degradation under extreme conditions, poor performance consistency and repeatability, large fluctuation of device performance in large-scale preparation, and insufficient research on resistance change mechanism, which affects the optimization and application of the device.

[0005] In summary, the existing perovskite memristor has the problems of poor material stability, poor performance consistency and repeatability, and insufficient research on resistance change mechanism. SUMMARY

[0006] The purpose of the present application is to provide a preparation method of a high-performance perovskite memristor, which solves the problems of poor material stability, poor performance consistency and repeatability, and insufficient research on resistance change mechanism of the existing perovskite memristor.

[0007] To achieve the above-mentioned purpose, the present application provides a preparation method of a high-performance perovskite memristor, which comprises the following steps:

[0008] Take a predetermined mass fraction of lead iodide, methylammonium iodide, formamidinium hydroiodide, dimethylformamide, dimethyl sulfoxide and polyvinylidene fluoride solution to prepare a FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution;

[0009] Take a predetermined mass fraction of polymethyl methacrylate material and a 99.8% purity chlorobenzene solvent to prepare a PMMA solution with a concentration of 10 mg / ml;

[0010] Prepare an ITO glass with a predetermined size as a substrate, and obtain a substrate sample after ultrasonic cleaning.

[0011] After the cleaned substrate sample is dried, it is placed in a plasma cleaning machine for hydrophilic treatment;

[0012] A PEDOT:PSS solution, a FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene solution and a PMMA solution are sequentially spin-coated on the surface of the substrate sample after hydrophilic treatment to obtain a substrate sample after surface spin-coating treatment;

[0013] After covering the surface of the substrate sample after surface spin-coating treatment with a mask plate of a specified size, the top electrode is plated in a thermal evaporation instrument to complete the preparation of the high-performance perovskite memristor.

[0014] In the step "take a predetermined mass fraction of lead iodide, methyl iodide, methyl amidine hydroiodide, dimethylformamide, dimethyl sulfoxide and polyvinylidene solution to prepare FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene solution", the specific content is:

[0015] Take a predetermined mass fraction of lead iodide, methyl iodide, methyl amidine hydroiodide, dimethylformamide and dimethyl sulfoxide in a nitrogen glove box to prepare FA 0.1 MA 0.9 PbI3 precursor solution, and stir at a speed of 800 rpm for 6 hours, then mix with a polyvinylidene solution with a concentration of 0.5 mg / ml at a ratio of 10:1 and stir for 30 minutes to prepare FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene solution.

[0016] In the step "take a predetermined mass fraction of poly(methyl methacrylate) material and 99.8% purity chlorobenzene solvent to prepare a PMMA solution with a concentration of 10 mg / ml", the specific content is:

[0017] Take a predetermined mass fraction of poly(methyl methacrylate) material and 99.8% purity chlorobenzene solvent and heat in a water bath at 70°C, and stir at a speed of 880 rpm for 2 hours during the water bath heating process to prepare a PMMA solution with a concentration of 10 mg / ml.

[0018] In the step "prepare a predetermined size of ITO glass as a substrate, and obtain a substrate sample after ultrasonic cleaning", the specific content is:

[0019] Prepare a predetermined size of ITO glass as a substrate and sequentially immerse it in ITO cleaning solution, anhydrous ethanol and deionized water for ultrasonic cleaning for 20 minutes.

[0020] The specific content of the step of "placing the dried substrate sample in the plasma cleaning machine for hydrophilic treatment" is as follows:

[0021] After drying the cleaned substrate sample, place it on the cleaning chamber tray of the plasma cleaning machine and perform hydrophilic treatment on the substrate sample for 600s.

[0022] The specific steps of the step of "sequentially spin-coating PEDOT:PSS solution, FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution and PMMA solution on the surface of the hydrophilic treated substrate sample to obtain the surface spin-coated substrate sample" include the following:

[0023] Spin-coat the filtered PEDOT:PSS solution on the surface of the hydrophilic treated substrate sample at a high speed of 6000 rpm for 30s, and anneal at a temperature of 120°C for 10 minutes;

[0024] After the surface spin-coated PEDOT:PSS solution substrate sample cools naturally, place the substrate sample in a vacuum glove box, spin-coat FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution on the surface of the sample at a speed of 5000 rpm for 35s, and anneal at a temperature of 100°C for 5 minutes;

[0025] After the surface spin-coated FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution substrate sample cools naturally, spin-coat PMMA solution at a low speed of 500 rpm for 5s, a high speed of 3000 rpm for 40s, and anneal at a temperature of 100°C for 10 minutes to complete the surface spin-coating treatment of the substrate sample.

[0026] In the step of "spin-coating FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution on the surface of the sample", 75 microliters of toluene solution is added uniformly on the surface at 30s using a pipette as an anti-solvent.

[0027] The preparation method of the high-performance perovskite memristor of the present application is as follows: preparing FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride solution and PMMA solution, and selecting a pre-set size ITO glass for ultrasonic cleaning, drying and hydrophilic treatment as a substrate, and sequentially spin-coating PEDOT:PSS, FA 0.1 MA 0.9PbI3 and PMMA solution, finally cover the mask plate and hot-plate top electrode, through the introduction of polyvinylidene fluoride, there are polar groups on the molecular chain, such as fluorine atom, the interface charge transmission is regulated and improved carrier mobility, as an additive, it can improve the stability and switching ratio performance of perovskite memristor; And strict control of the preparation process and parameters ensure the consistency and repeatability of the performance; At the same time, the interaction between polyvinylidene fluoride and perovskite provides a new perspective for the resistance change mechanism, which helps to understand and optimize the device performance. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, below will be briefly introduced the drawings needed to be used in the embodiments or prior art description, obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, without creative labor, other drawings can also be obtained according to these drawings.

[0029] Fig. 1 It is the step flow chart of the preparation method of high-performance perovskite memristor provided by the present application.

[0030] Fig. 2 It is the preparation process schematic diagram of the preparation method of high-performance perovskite memristor provided by the present application.

[0031] Fig. 3 It is the structure diagram of high-performance perovskite memristor prepared by the preparation method of high-performance perovskite memristor provided by the present application.

[0032] Fig. 4 It is the I-V curve diagram of high-performance perovskite memristor prepared by the preparation method of high-performance perovskite memristor provided by the present application. DETAILED DESCRIPTION

[0033] The embodiments of the present application will be described in detail below, and the examples of the embodiments are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present application, and cannot be understood as a limitation of the present application.

[0034] Please refer to Figs. 1 to 4 The present application provides a preparation method of high-performance perovskite memristor, which comprises the following steps:

[0035] S1: take a predetermined amount of lead iodide, methylammonium iodide, formamidinium hydroiodide, dimethylformamide, dimethyl sulfoxide and polyvinylidene fluoride solution, prepare FA 0.1 MA0.9 PbI3 solution;

[0036] S2: A PMMA solution with a concentration of 10 mg / ml was prepared by taking a predetermined mass fraction of polymethyl methacrylate material and a chlorobenzene solvent with a purity of 99.8%;

[0037] S3: An ITO glass with a predetermined size was prepared as a substrate, and after ultrasonic cleaning, a substrate sample was obtained;

[0038] S4: After drying treatment, the cleaned substrate sample was placed in a plasma cleaning machine for hydrophilic treatment;

[0039] S5: On the surface of the substrate sample after hydrophilic treatment, PEDOT:PSS solution, FA 0.1 MA 0.9 PbI3 solution and PMMA solution were spin-coated in sequence to obtain a substrate sample after surface spin-coating treatment;

[0040] S6: After covering the surface of the substrate sample after surface spin-coating treatment with a mask plate of a specified specification, the top electrode was plated in a thermal evaporation instrument to complete the preparation of the high-performance perovskite memristor.

[0041] In this embodiment, by preparing FA 0.1 MA 0.9 PbI3 solution and PMMA solution, and selecting a predetermined size ITO glass for ultrasonic cleaning, drying and hydrophilic treatment as a substrate, PEDOT:PSS, FA 0.1 MA 0.9 PbI3 and PMMA solution were spin-coated in sequence, and finally a mask plate was covered and a top electrode was thermally evaporated. Through the introduction of polyvinylidene fluoride, there are polar groups such as fluorine atoms on the molecular chain, which regulate the interface charge transport and improve the carrier mobility. As an additive, it can improve the stability and switching ratio performance of the perovskite memristor. Strictly controlled preparation process and parameters ensure the consistency and repeatability of the performance. At the same time, the study of the interaction between polyvinylidene fluoride and perovskite provides a new perspective for the resistance change mechanism, which helps to understand and optimize the device performance.

[0042] Further, the specific content of step S1 is:

[0043] A predetermined mass fraction of lead iodide (PbI2), methylammonium iodide (CH3NH3PbI3, MAI), formamidine hydroiodide (HC(NH2)2, FAI), dimethylformamide (N,N-Dimethylformamidex, DMF) and dimethyl sulfoxide (Dimethylsulfoxide, DMSO) were prepared in a nitrogen glove box to prepare FA0.1 MA 0.9 PbI3 precursor solution, and stirred at 800 rpm for 6 hours. After filtration, the solution was mixed with a polyvinylidene fluoride solution with a concentration of 0.5 mg / ml at a ratio of 10:1 and stirred for 30 minutes to prepare a FA 0.1 MA 0.9 PbI3 solution.

[0044] Further, the specific content of step S2 is as follows:

[0045] A predetermined amount of poly(methyl methacrylate) material (molecular weight of about 120000) and chlorobenzene solvent with a purity of 99.8% were heated in a water bath at a temperature of 70°C. During the water bath heating process, the solution was stirred at a speed of 880 rpm for 2 hours to prepare a PMMA solution with a concentration of 10 mg / ml.

[0046] Further, the specific content of step S3 is as follows:

[0047] An ITO glass with a predetermined size was prepared as a substrate and was sequentially immersed in an ITO cleaning solution (Alconox precision cleaning powder, concentration of 10 mg / ml), anhydrous ethanol (concentration of 99%), and deionized water for ultrasonic cleaning (power of 100%) for 20 minutes.

[0048] Further, the specific content of step S4 is as follows:

[0049] After drying the cleaned substrate sample, it was placed on the cleaning chamber tray of the plasma cleaning machine. The substrate sample was subjected to hydrophilic treatment for 600 s according to the specified operation (air was introduced, and the gas flow rate was 2.5 ml / min).

[0050] In this embodiment, attention should be paid to the brightness of the plasma glow in the cleaning chamber during the treatment process. By appropriately adjusting the gas flow meter, the surface of the sample can be well treated for hydrophilicity.

[0051] Further, the specific steps of step S5 include the following:

[0052] The filtered PEDOT:PSS solution (1.3-1.7% aqueous solution) was spin-coated on the surface of the hydrophilic-treated substrate sample at a high speed of 6000 rpm for 30 s, and was annealed (heating rate of 0.45°C / s) at a temperature of 120°C for 10 minutes;

[0053] After the substrate sample on which the PEDOT:PSS solution is spin-coated is naturally cooled, the substrate sample is placed in a vacuum glove box according to a specified operation, and the FA 0.1 MA 0.9 PbI3 solution is spin-coated on the surface of the sample at a low speed of 500 rpm for 5 s and a high speed of 3000 rpm for 40 s, and is annealed at a temperature of 100 DEG C (at a temperature rising rate of 0.45 DEG C / s) for 10 min to complete the spin-coating treatment of the surface of the substrate sample.

[0054] After the substrate sample on which the FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride is spin-coated is naturally cooled, the PMMA solution is spin-coated on the surface of the sample at a low speed of 500 rpm for 5 s and a high speed of 3000 rpm for 40 s, and is annealed at a temperature of 100 DEG C (at a temperature rising rate of 0.45 DEG C / s) for 10 min to complete the spin-coating treatment of the surface of the substrate sample.

[0055] In the present embodiment, in the step of "spin-coating the FA 0.1 MA 0.9 PbI3 solution containing polyvinylidene fluoride on the surface of the sample", 75 microliters of toluene solution is added at a constant speed on the surface by using a pipette at 30 s as a anti-solvent.

[0056] Further, the specific content of the step S6 is as follows:

[0057] After the surface of the substrate sample after the spin-coating treatment is covered with a mask plate of a specified specification, the substrate sample is placed in a thermal evaporation instrument, the vacuum degree of the instrument is 4.8E-4 Pa, the evaporation rate is about 1.9 A / S, the deposition thickness is 200 nm, and the Ag top electrode is deposited on the surface of the sample device to complete the preparation of the high-performance perovskite memristor.

[0058] In summary, the FA 0.1 MA 0.9 PbI3 is an organic-inorganic hybrid perovskite material, has unique ion migration and charge storage characteristics, and can realize the function of memristor under the action of an electric field, but its long-term stability and switching ratio performance need to be improved. The present application patent prepares a memristor structure with FA 0.1 MA 0.9 PbI3 and polyvinylidene fluoride (PVDF) as the main functional layer. PVDF is a polar polymer material, and there are polar groups such as fluorine atoms on the molecular chain, which can regulate the interface charge transmission and improve the carrier mobility, and as an additive, it can improve the stability and switching ratio performance of the perovskite memristor.

[0059] Therefore, compared with the prior art, the present application has the following beneficial effects:

[0060] The PEDOT:PSS / FA is prepared sequentially 0.1 MA 0.9 The PbI3 (containing PVDF) / PMMA film as a memory resistor active layer, and the PVDF as an additive can effectively improve the related performance of the perovskite memory resistor, which provides an effective idea for the development and application of the perovskite memory resistor, and can promote the further development and application of the perovskite memory resistor and broaden the application field of the perovskite memory resistor.

[0061] Embodiment:

[0062] The application provides a preparation method of a high-performance perovskite memory resistor.

[0063] S101: 599.30 mg of lead iodide (PbI2), 186.03 mg of methylammonium iodide (CH3NH3PbI3, MAI), 22.36 mg of formamidinium iodide (HC(NH2)2, FAI), 0.9 ml of dimethylformamide (N,N-Dimethylformamidex, DMF) and 0.1 ml of dimethyl sulfoxide (Dimethyl sulfoxide, DMSO) are taken, and FA is prepared in a nitrogen glove box 0.1 MA 0.9 PbI3 precursor solution, and the solution is stirred at a rotation speed of 800 rpm for 6 hours; after filtration, the solution is mixed with a polyvinylidene fluoride solution with a concentration of 0.5 mg / ml at a proportion of 10:1 and stirred for 30 minutes.

[0064] S102: 10 mg / ml of a poly (methyl methacrylate) (PMMA) solution is prepared by taking PMMA material (with a molecular weight of about 120000) and chlorobenzene solvent with a purity of 99.8%, and the solution is heated in a water bath at a temperature of 70 DEG C and stirred at a rotation speed of 880 rpm for 2 hours.

[0065] S103: ITO glass with a suitable size is prepared as a substrate, and the substrate is immersed in ITO cleaning solution (prepared by using Alconox precision cleaning powder, with a concentration of 10 mg / ml), anhydrous ethanol (with a concentration of 99%) and deionized water in sequence and ultrasonically treated (at a power of 100%) for 20 minutes to obtain a substrate sample.

[0066] S104: after drying treatment of the cleaned substrate sample obtained in the step S103, the sample is placed on a tray in a cleaning chamber of a plasma cleaning machine, and the sample is subjected to hydrophilic treatment for 600 s according to a specified operation (air is introduced, and the gas flow is 2.5 ml / min); during the treatment process, attention should be paid to the brightness of the plasma glow in the cleaning chamber, and the gas flow meter is properly adjusted to ensure good hydrophilic treatment effect of the sample surface.

[0067] S105: spin the filtered PEDOT:PSS solution (1.3-1.7% aqueous solution) 100 microliters on the sample surface treated in S104 step under the parameters of high speed 6000 rpm, time 30 s, and anneal at 120°C (heating rate 0.45°C / s) for 10 minutes.

[0068] S106: after the sample treated in S105 step is naturally cooled, it is placed in a vacuum glove box according to the specified operation, and the FA prepared in S101 step is spin-coated on the sample surface under the parameters of rotation speed 5000 rpm, time 35 s. 0.1 MA 0.9 PbI3 mixed solution 60 microliters, note that 75 microliters of toluene solution is added at a constant speed on the surface at 30 s as an anti-solvent, and then annealed at 100°C (heating rate 0.45°C / s) for 5 minutes.

[0069] S107: after the sample treated in S6 step is naturally cooled, spin the PMMA solution under the parameters of low speed 500 rpm, time 5 s, high speed 3000 rpm, time 40 s, and anneal the sample at 100°C (heating rate 0.45°C / s) for 10 minutes.

[0070] S108: the sample surface treated in S107 step is correctly covered with a mask plate of a specific specification, and placed in a thermal evaporation instrument, the instrument has a vacuum degree of 4.8E-4 Pa, an evaporation rate of about 1.9 A / S, and a deposition thickness of 200 nm, and an Ag top electrode is deposited on the surface of the sample device.

[0071] The above only discloses one preferred embodiment of the present application, of course cannot limit the scope of the present application, and those skilled in the art can understand that the above-mentioned embodiment can be implemented in whole or in part, and equivalent changes made according to the claims of the present application still belong to the scope of the present application.

Claims

1. A method for preparing high-performance perovskite memristor, characterized in that, It comprises the following steps: Take the preset mass of lead iodide, methyl ammonium iodide, formamidine hydroiodide, dimethylformamide, dimethyl sulfoxide and polyvinylidene fluoride solution, and prepare FA containing polyvinylidene fluoride solution 0.1 MA 0.9 PbI3 solution; Take a predetermined mass of polymethyl methacrylate material and a purity of 99.8% chlorobenzene solvent to prepare a PMMA solution with a concentration of 10 mg / ml; Prepare an ITO glass of a predetermined size as a substrate, and after ultrasonic cleaning, obtain a substrate sample; After drying the cleaned substrate sample, place it in a plasma cleaning machine for hydrophilic treatment; The surface of the hydrophilic treated substrate sample was spin-coated with PEDOT:PSS solution, FA containing polyvinylidene fluoride solution, and PbI3 solution and PMMA solution in this order to obtain a surface spin-coated substrate sample. 0.1 MA 0.9 PbI3 solution and PMMA solution, obtaining a surface spin-coated substrate sample; After the surface of the substrate sample after the spin coating treatment is covered with a mask plate of a specified specification, place it in a thermal evaporation instrument to plate the top electrode, and complete the preparation of the high-performance perovskite memristor.

2. The preparation method of the high-performance perovskite memristor according to claim 1, wherein Step "Take the pre-set mass of lead iodide, methylammonium iodide, formamidine hydroiodide, dimethylformamide, dimethyl sulfoxide and polyvinylidene fluoride solution, prepare FA containing polyvinylidene fluoride solution" 0.1 MA 0.9 The specific content of the step "PbI3 solution" is: Take the preset mass of lead iodide, methyl ammonium iodide, formamidine hydroiodide, dimethylformamide and dimethyl sulfoxide to prepare FA in a nitrogen glove box 0.1 MA 0.9 PbI3 precursor solution, and stir at a speed of 800 rpm for 6 hours. After filtration, mix with a polyvinylidene fluoride solution with a concentration of 0.5 mg / ml at a ratio of 10:1 and stir for 30 minutes to prepare FA containing a polyvinylidene fluoride solution 0.1 MA 0.9 PbI3 solution.

3. The preparation method of the high-performance perovskite memristor according to claim 2, wherein The specific content of the step "take a predetermined mass of polymethyl methacrylate material and a purity of 99.8% chlorobenzene solvent to prepare a PMMA solution with a concentration of 10 mg / ml" is: Take a predetermined mass of polymethyl methacrylate material and a purity of 99.8% chlorobenzene solvent and heat it in a water bath at 70°C. During the water bath heating process, stir at a speed of 880 rpm for 2 hours to prepare a PMMA solution with a concentration of 10 mg / ml.

4. The preparation method of the high-performance perovskite memristor according to claim 3, wherein The specific content of the step "prepare an ITO glass of a predetermined size as a substrate, and after ultrasonic cleaning, obtain a substrate sample" is: Prepare an ITO glass of a predetermined size as a substrate and immerse it in ITO cleaning solution, anhydrous ethanol, and deionized water for ultrasonic cleaning for 20 minutes.

5. The preparation method of the high-performance perovskite memristor according to claim 4, wherein The specific content of the step "after drying the cleaned substrate sample, place it in a plasma cleaning machine for hydrophilic treatment" is: After drying the cleaned substrate sample, place it on the cleaning chamber tray of the plasma cleaning machine and perform hydrophilic treatment on the substrate sample for 600s.

6. The preparation method of the high-performance perovskite memristor according to claim 5, wherein Step "sequentially spin-coating PEDOT:PSS solution, FA solution containing polyvinylidene fluoride solution, and PbI3 solution on the surface of the substrate sample after the hydrophilic treatment, and obtaining a substrate sample after surface spin-coating treatment" 0.1 MA 0.9 PbI3 solution and PMMA solution, obtaining a substrate sample after surface spin-coating treatment" the specific steps of the step "sequentially spin-coating PEDOT:PSS solution, FA solution containing polyvinylidene fluoride solution, and PbI3 solution on the surface of the substrate sample after the hydrophilic treatment, and obtaining a substrate sample after surface spin-coating treatment" include the following: After hydrophilic treatment, spin-coat the filtered PEDOT:PSS solution on the surface of the substrate sample at a high speed of 6000 rpm for 30s, and anneal at a temperature of 120°C for 10 minutes; After the substrate sample to be spin-coated with the PEDOT:PSS solution is naturally cooled, the substrate sample is placed in a vacuum glove box, and a FA containing polyvinylidene fluoride solution is spin-coated on the surface of the sample at a rotation speed of 5000 rpm for 35 s 0.1 MA 0.9 PbI3solution and annealed at a temperature of 100 °C for 5 minutes; The surface of the substrate sample is spin-coated with a solution containing polyvinylidene fluoride 0.1 MA 0.9 After the substrate sample of the PbI3 solution is naturally cooled, the PMMA solution is spin-coated under the parameters of a low speed of 500 rpm for 5 s, a high speed of 3000 rpm for 40 s, and annealing treatment at a temperature of 100 ℃ for 10 min, and the surface spin-coating treatment of the substrate sample is completed.

7. The preparation method of the high-performance perovskite memristor according to claim 6, wherein In step "spin coating FA containing polyvinylidene fluoride solution on the surface of the sample" 0.1 MA 0.9 In step "PbI3 solution", 75 microliters of toluene solution as anti-solvent was added uniformly on the surface with a pipette at 30 s.

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