Vapor deposition furnace

Abstract

The invention relates to the technical field of vapor deposition, in particular to a vapor deposition furnace which comprises a furnace body, a plurality of reaction chambers which are not communicated with one another are arranged in the furnace body, and each reaction chamber is internally provided with a workpiece placing position, a first air inlet and a first air outlet, the gas inlet box is arranged in the furnace body, the gas inlet box is provided with a plurality of second gas outlets, the plurality of first gas inlets are communicated with the plurality of second gas outlets in a one-to-one correspondence manner, and the plurality of reaction chambers are sequentially arranged on the periphery of the gas inlet box, so that the problem of low production efficiency of a vapor deposition process is solved.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, and more particularly to a vapor deposition furnace. Background Technology

[0002] Chemical vapor deposition (CVD) is a thin film preparation technique widely used in materials science and engineering. This technique primarily utilizes one or more gaseous compounds or elements containing thin film elements to chemically react on the surface of a workpiece to generate a thin film.

[0003] Currently, chemical vapor deposition (CVD) processes mainly utilize vapor deposition furnaces. However, existing CVD furnaces typically have only one chamber, resulting in low space utilization and low production efficiency. Summary of the Invention

[0004] In view of this, embodiments of this application provide a vapor deposition furnace to solve the problem of low production efficiency in vapor deposition processes.

[0005] In a first aspect, one embodiment of this application provides a vapor deposition furnace, comprising: a furnace body having a plurality of non-communicating reaction chambers, each reaction chamber having a workpiece placement position and a first air inlet and a first air outlet connected to the workpiece placement position; and an air inlet box disposed within the furnace body having a plurality of second air outlets, the plurality of first air inlets and the plurality of second air outlets being connected in a one-to-one correspondence, and the plurality of reaction chambers being arranged sequentially on the outer periphery of the air inlet box.

[0006] In conjunction with the first aspect, the vapor deposition furnace also includes: multiple partition plates, with the gas inlet box abutting against the side wall opposite to the furnace body, and the multiple partition plates being spaced apart on both sides of the gas inlet box along its extension direction; and multiple insulation plates, respectively disposed on the outer wall of the gas inlet box and the inner wall of the furnace body, with the outer edges of the partition plates abutting against the insulation plates on the outer wall of the gas inlet box and the inner wall of the furnace body, so as to divide the furnace body into multiple non-communicating reaction chambers.

[0007] In conjunction with the first aspect, the vapor deposition furnace also includes a baffle that is detachably installed on the inner wall of the reaction chamber.

[0008] In conjunction with the first aspect, the reaction chamber has a top wall, a bottom wall, and four side walls disposed between the top wall and the bottom wall and connected in sequence. A first air inlet and a first air outlet are disposed through two of the opposite side walls. The top wall and the other two opposite side walls are provided with baffles; and / or, the surface of the baffles is provided with a protective coating.

[0009] In conjunction with the first aspect, the vapor deposition furnace also includes: a material rack, which is removably and conveniently located in the reaction chamber, and a workpiece placement position located on the material rack.

[0010] In conjunction with the first aspect, the workpiece placement position includes a horizontal placement station for placing the workpiece horizontally, and the material rack has multiple horizontal placement stations arranged sequentially in the vertical direction; or, the workpiece placement position includes a vertical placement station for placing the workpiece vertically, and the material rack has multiple vertical placement stations arranged sequentially in the transverse direction.

[0011] In conjunction with the first aspect, the vapor deposition furnace also includes: a rotating tray, which is rotatably disposed within the reaction chamber, and a material rack that can be placed on the rotating tray.

[0012] In conjunction with the first aspect, the vapor deposition furnace also includes: a heating element disposed in the furnace body, and / or, a heating element disposed in the reaction chamber.

[0013] In conjunction with the first aspect, the vapor deposition furnace also includes: a gas outlet box, which is disposed on the side wall of the furnace body and is connected to the first gas outlet.

[0014] In conjunction with the first aspect, both the inner cavity of the furnace and the reaction chamber are rectangular parallelepiped structures.

[0015] Applying the technical solution of this invention, workpieces are placed at their designated workpiece placement positions within each reaction chamber. The required gas for the reaction is introduced into the reaction chamber through the second outlet of the inlet box and the first inlet of the reaction chamber. After the gas reacts, a solid film forms on the surface of the workpiece, and the byproducts generated are discharged through the first outlet. Compared to existing vapor deposition furnaces, the vapor deposition furnace of this invention, by providing multiple workpiece placement positions, can simultaneously perform vapor deposition on multiple workpieces, improving space utilization and production efficiency. Furthermore, by arranging the reaction chambers around the outer periphery of the inlet box, the distance between the reaction chambers and the inlet box can be reduced, further improving space utilization. Attached Figure Description

[0016] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0017] Figure 1 The diagram shown is a schematic diagram of the structure of a vapor deposition furnace provided in an embodiment of this application.

[0018] Figure 2 As shown Figure 1 A magnified view of a portion of point A in the middle.

[0019] Figure 3 The diagram shown is a structural schematic of a vapor deposition furnace provided in another embodiment of this application.

[0020] Figure 4 The diagram shown is a structural schematic of a vapor deposition furnace provided in another embodiment of this application.

[0021] Figure label:

[0022] 1. Workpiece; 10. Furnace body; 20. Reaction chamber; 21. Workpiece placement position; 211. Horizontal placement position; 212. Vertical placement position; 30. Air inlet box; 40. Divider plate; 41. Insulation board; 50. Baffle plate; 60. Material rack; 70. Rotary tray; 80. Heating element; 90. Air outlet box. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] Silicon carbide (SiC) coatings have wide applications in high-temperature, wear-resistant, corrosion-resistant, and semiconductor fields due to their excellent physical and chemical properties. Currently, the main method for preparing silicon carbide coatings is chemical vapor deposition (CVD). CVD involves placing a workpiece in a vapor deposition furnace and introducing one or more gaseous compounds or elements containing film-forming elements into the furnace. A chemical reaction occurs on the workpiece surface, causing the resulting solid film to deposit onto the workpiece surface. Byproducts generated during the reaction are then removed.

[0025] The chemical vapor deposition (CVD) process consists of three important stages: diffusion of reactant gases to the workpiece surface, adsorption of reactant gases onto the workpiece surface, and chemical reactions occurring on the workpiece surface to form solid deposits, with the resulting gaseous byproducts detaching from the workpiece surface. The most common CVD reactions include thermal decomposition, chemical synthesis, and chemical transport reactions.

[0026] Currently, silicon carbide is mainly prepared by using gases such as silane (SiH4) and methane (CH4) to generate silicon carbide thin films through chemical reactions of these gases, which are then deposited on substrate materials.

[0027] However, since current vapor deposition furnaces can generally only hold one workpiece, this results in wasted space inside the furnace and low production efficiency.

[0028] To solve the above problems, such as Figure 1 and Figure 2As shown, one embodiment of the present invention provides a vapor deposition furnace, which includes a furnace body 10 and an inlet box 30. The furnace body 10 has multiple non-communicating reaction chambers 20. Each reaction chamber 20 is provided with a workpiece placement position 21 and a first air inlet and a first air outlet communicating with the workpiece placement position 21. The inlet box 30 is disposed within the furnace body 10 and has multiple second air outlets. The multiple first air inlets and multiple second air outlets are connected in a one-to-one correspondence. The multiple reaction chambers 20 are arranged sequentially on the outer periphery of the inlet box 30.

[0029] Applying the technical solution of this invention, a workpiece 1 is placed at the workpiece placement position 21 within each reaction chamber 20. The gas required for the reaction is introduced into the reaction chamber 20 through the second gas outlet of the gas inlet box 30 and the first gas inlet of the reaction chamber 20. After the gas reacts, a solid film is formed on the surface of the workpiece 1, and the by-products generated by the reaction are discharged through the first gas outlet. Compared with existing vapor deposition furnaces, the vapor deposition furnace of this invention, by setting multiple workpiece placement positions 21, can simultaneously perform vapor deposition processes on multiple workpieces 1, improving space utilization and production efficiency.

[0030] Furthermore, by arranging the reaction chamber 20 around the outer periphery of the air inlet box 30, the distance between the reaction chamber 20 and the air inlet box 30 can be reduced, further improving space utilization. It also facilitates the arrangement of the second air outlet of the air inlet box 30 and the first air inlet of the reaction chamber 20, allowing gas to smoothly enter the reaction chamber 20 from the air inlet box 30.

[0031] It should be noted that, since the furnace body 10 of the vapor deposition furnace has multiple reaction chambers 20, the same type of workpiece 1 can be placed in each reaction chamber 20, meaning that the solid film deposited on the surface of the workpiece 1 can be of the same type. Furthermore, since the multiple reaction chambers 20 are not interconnected, different types of workpieces 1 can also be placed in each reaction chamber 20, meaning that different types of solid films can be deposited on the surface of the workpiece 1. This can be achieved by introducing different types of gases into each reaction chamber 20 and controlling each reaction chamber 20 individually.

[0032] Each reaction chamber 20 may have multiple workpiece placement positions 21, so that multiple workpieces 1 can be placed in each reaction chamber 20, and multiple workpieces 1 can be subjected to vapor deposition process at the same time to further improve production efficiency.

[0033] The inlet box 30 can serve as a temporary storage point for gas. After the gas flows into the inlet box 30, a buffer is formed within it, making the airflow velocity entering the reaction chamber 20 more uniform and gentle, thus allowing the gas to react more smoothly on the surface of the workpiece 1. In other embodiments, the inlet box 30 can also be located outside the furnace body 10. Its arrangement is determined according to the actual situation.

[0034] In some embodiments, the air inlet box 30 can be arranged in the middle of the furnace body 10, extending along the length of the furnace body 10. Some reaction chambers 20 are arranged sequentially on one side of the air inlet box 30 along its length, while the remaining reaction chambers 20 are arranged sequentially on the other side of the air inlet box 30. This allows the second air outlets of the air inlet box 30 to be respectively located on both sides, corresponding to the first air inlets of different reaction chambers 20. In this case, the interior of the furnace body 10 can be configured as a cuboid structure, allowing the structure of the furnace body 10 to match the arrangement of the reaction chambers 20 described above.

[0035] Of course, in other embodiments, multiple reaction chambers 20 can also be arranged circumferentially around the outer periphery of the air inlet box 30. In this case, the air inlet box 30 can be configured as a structure with a circular cross-sectional shape. In order to increase the space utilization rate inside the furnace body 10, the interior of the furnace body 10 can be configured as a cylindrical structure so that the structure of the furnace body 10 can match the above-mentioned arrangement of the reaction chambers 20.

[0036] The furnace door of the vapor deposition furnace is located on the side wall of the furnace body 10, and each reaction chamber 20 is provided with a separate furnace door to facilitate the loading and unloading of the workpiece 1.

[0037] Furthermore, the above-mentioned arrangement, with the air inlet box 30 located in the middle and the reaction chamber 20 located between the air inlet box 30 and the side wall of the furnace body 10, allows for convenient handling of the workpiece 1 through the side wall of the furnace body 10, saving operation time and improving production efficiency.

[0038] In some embodiments, the first air inlet of the air inlet box 30 is located at the upper part of the furnace body 10, and the gas enters the air inlet box 30 from the upper part of the furnace body 10 and flows out from the side of the air inlet box 30 into the reaction chamber 20.

[0039] The second gas outlet is designed as a spray nozzle to allow the gas to quickly and evenly fill the reaction chamber 20.

[0040] like Figure 1 and Figure 2As shown, the vapor deposition furnace also includes multiple partition plates 40 and multiple insulation plates 41. The gas inlet box 30 abuts against the side wall opposite to the furnace body 10. The multiple partition plates 40 are arranged at intervals on both sides of the gas inlet box 30 along its extension direction. The multiple insulation plates 41 are respectively disposed on the outer wall of the gas inlet box 30 and the inner wall of the furnace body 10. The outer edges of the partition plates 40 abut against the insulation plates 41 on the outer wall of the gas inlet box 30 and the inner wall of the furnace body 10, respectively, to divide the furnace body 10 into multiple non-communicating reaction chambers 20. With the above design, the furnace body 10 is divided into multiple reaction chambers 20 by the gas inlet box 30 and the partition plates 40, making full use of the internal space of the furnace body 10 and greatly improving the space utilization rate of the furnace body 10.

[0041] Both the partition plate 40 and the insulation plate 41 are made of insulation material. Furthermore, in order to maintain the shape of the reaction chamber 20, the partition plate 40 and the insulation plate 41 should be made of materials with certain structural strength.

[0042] In existing vapor deposition furnaces, workpiece 1 is typically placed inside the furnace using a support, and the size of workpiece 1 is very small compared to the internal dimensions of the furnace. Furthermore, because different types of workpieces 1 are usually subjected to vapor deposition processes depending on the requirements of the deposition product, the resulting coating is partially deposited on workpiece 1, while the rest accumulates on the inner wall of the furnace. However, since different types of workpieces 1 deposit different types of solid films, various different coatings form on the inner wall of the furnace. As the coating gradually thickens, coating peeling occurs. If the coating falls onto the surface of workpiece 1, it will affect the yield of the final product.

[0043] like Figure 2 As shown, the vapor deposition furnace also includes a baffle 50, which is detachably installed on the inner wall of the reaction chamber 20. With this design, the inner wall of the reaction chamber 20 is shielded by the baffle 50, allowing the coating produced by the vapor deposition process to form on the baffle 50. Furthermore, by replacing the baffle 50, the potential for the coating to fall onto the workpiece 1 and affect product yield can be eliminated before the coating detaches.

[0044] The baffle 50 can be connected to the inner wall of the reaction chamber 20 using different connection methods, and this application is not limited to any particular method. In some embodiments, the baffle 50 can be fixed by bolt connection. In other embodiments, the baffle 50 can be fixed by riveting. Since the reaction chamber 20 is formed by the partition plate 40 and the insulation plate 41, the baffle 50 should be detachably connected to the inner side of the partition plate 40 and the insulation plate 41.

[0045] The frequency of removing the baffle 50 needs to be determined based on the actual situation. Specifically, if the same type of workpiece 1 is subjected to a vapor deposition process in the reaction chamber 20, the coating formed on the baffle 50 will be of the same type. The coating formation on the baffle 50 can be observed, and the timing of replacing the baffle 50 can be determined based on the specific peeling condition of the coating. If there is a significant change in the solid film deposited on the workpiece 1 between two consecutive processes in the reaction chamber 20, the baffle 50 can be replaced before the start of the subsequent vapor deposition process on the workpiece 1 to prevent peeling and detachment between different coatings, thereby ensuring product yield.

[0046] In some embodiments, the surface of the baffle 50 is provided with a protective coating. The protective coating of the baffle 50 can enhance the adhesion between the coating formed in the vapor deposition process and the baffle 50, thereby preventing the coating from peeling off.

[0047] The protective coating and the coating formed in the vapor deposition process should be of the same type to ensure that the coating generated in the vapor deposition process can be stably formed on the baffle 50. For example, when forming a silicon carbide thin film on the workpiece 1, the surface of the baffle 50 can be a silicon carbide coating.

[0048] Generally, workpiece 1 is positioned in the direction of gas flow. When gas flows over the surface of workpiece 1, a reaction occurs on the surface, and a solid film is deposited. Simultaneously, during the gas flow, airflow also flows over the sidewalls of the reaction chamber 20, which are aligned with workpiece 1 (i.e., the top wall of the reaction chamber 20 and the sidewalls of the reaction chamber 20 without the first inlet and outlet), forming a coating. Furthermore, the coatings on these surfaces are easily detached and fall onto the surface of workpiece 1.

[0049] Since the workpiece 1 is placed on the rack 60, the rack 60 is in contact with the bottom wall of the reaction chamber 20, but there is a gap between the rack 60 and the top wall and the side wall of the reaction chamber 20, so that during the flow of gas, in addition to reacting on the surface of the workpiece 1 to form a solid film, the gas will also form a coating on the top wall and the side wall of the reaction chamber 20 where the first air inlet and the first air outlet are not provided.

[0050] like Figure 2 , Figure 3 as well as Figure 4 As shown, the reaction chamber 20 has a top wall, a bottom wall, and four side walls arranged between the top and bottom walls and connected in sequence. A first air inlet and a first air outlet are located through two opposite side walls. To solve the aforementioned problem, baffles 50 can be provided on the top wall and the other two opposite side walls. With the above design, the reaction chamber 20 uses baffles 50 to shield the side walls of the reaction chamber 20 in the gas flow direction, allowing the coating to form on the baffles 50. By replacing the baffles 50, the coating can be prevented from peeling off and falling onto the surface of the workpiece 1.

[0051] The top wall of the reaction chamber 20 is formed by an insulation board 41 installed on the surface of the furnace body 10, and the side wall of the reaction chamber 20 is formed by an insulation board 41 and a partition plate 40. The first air inlet and the first air outlet pass through two oppositely arranged insulation boards 41.

[0052] like Figure 3 and Figure 4 As shown, the vapor deposition furnace also includes a material rack 60, which is removably disposed within the reaction chamber 20, and a workpiece placement position 21 is disposed on the material rack 60. Using this design, before the vapor deposition process begins, the workpiece 1 is placed on the material rack 60 outside the reaction chamber 20, and then the material rack 60 is placed at the workpiece placement position 21 inside the reaction chamber 20. Compared to arranging the workpiece 1 inside the reaction chamber 20, this saves time on workpiece arrangement and improves production efficiency.

[0053] In existing vapor deposition furnaces, the feed rack 60 is fixed inside the furnace body 10. Before the vapor deposition process begins, the workpiece 1 must be placed on the feed rack 60 for thin film deposition to be performed on the workpiece 1. Using the vapor deposition furnace of this embodiment, since the feed rack 60 can be removed from the reaction chamber 20 for workpiece 1 placement, it is unnecessary to place the workpiece 1 inside the furnace body 10, thus saving time.

[0054] like Figure 3 As shown, in some embodiments, the workpiece placement position 21 includes a horizontal placement station 211 for placing the workpiece 1 horizontally. The material rack 60 has multiple horizontal placement stations 211, which are arranged sequentially in the vertical direction. By placing the workpiece 1 on the horizontal placement station 211, the workpiece 1 can be supported more stably and will not shift.

[0055] like Figure 4 As shown, in some embodiments, the workpiece placement position 21 includes a vertical placement station 212 for vertically placing the workpiece, and the material rack 60 has multiple vertical placement stations 212 arranged sequentially in the horizontal direction. By placing the workpiece 1 on the vertical placement station 212, the largest surface of the workpiece 1 will not be directly facing the top wall of the reaction chamber 20, reducing the risk of the top wall coating peeling off and falling onto the surface of the workpiece 1.

[0056] The horizontal placement station 211 and the vertical placement station 212 can be used to prepare thin films on the surfaces of different types of workpieces 1. Furthermore, by setting the horizontal placement station 211 and the vertical placement station 212 in different reaction chambers 20 of the furnace body 10, different solid films can be prepared on the surfaces of different types of workpieces 1 in a single production run.

[0057] The multiple reaction chambers 20 of the vapor deposition furnace can all be set up in horizontal positions 211, or all in vertical positions 212, or some reaction chambers 20 can be set up in horizontal positions 211 and some in vertical positions 212. The specific configuration needs to be determined based on the actual situation.

[0058] like Figure 3 and Figure 4 As shown, the vapor deposition furnace also includes a rotating tray 70, which is rotatably disposed within the reaction chamber 20. The material rack 60 is removably placed on the rotating tray 70. The rotating tray 70 can drive the material rack 60 to rotate, thereby driving the workpiece 1 on the material rack 60 to rotate, making the heating of the workpiece 1 and the deposition of solid films more uniform.

[0059] The power system of the rotating tray 70 extends from the outside of the furnace body 10 into the reaction chamber 20, and each reaction chamber 20 is equipped with a corresponding rotating tray 70. The rotating tray 70 is powered by the power system to enable it to rotate. The power system can be a motor and a transmission structure, with the motor driving the rotating tray 70 to rotate through the transmission structure.

[0060] like Figure 3 and Figure 4 As shown, the vapor deposition furnace also includes a heating element 80, which can heat the reaction chamber 20 or the furnace body 10 to create a high-temperature environment in the reaction chamber 20, thereby providing reaction conditions for the thin film deposition of the workpiece 1.

[0061] In some embodiments, the heating element 80 is disposed on the furnace body 10. By disposing the heating element 80 on the furnace body 10, all reaction chambers 20 can be heated simultaneously, making the temperature of each reaction chamber 20 uniform, so that the workpiece 1 in each reaction chamber 20 can form a good solid film.

[0062] It should be noted that when the heating element 80 is installed in the furnace body 10, since the temperature of each reaction chamber 20 is the same, only the same type of workpiece 1 can be placed in each reaction chamber 20 so that the same solid film can be deposited on the workpiece 1.

[0063] In some embodiments, the heating element 80 is disposed in the reaction chamber 20. By disposing of the heating element 80 in the reaction chamber 20, the power of the heating element 80 can be controlled separately, so that each reaction chamber 20 has a different temperature and there is no mutual influence between the reaction chambers 20, thereby enabling solid-state thin film deposition on different workpieces 1.

[0064] like Figure 1As shown, the vapor deposition furnace also includes a gas outlet box 90, which is disposed on the side wall of the furnace body 10 and is connected to the first gas outlet. By providing the gas outlet box 90, the by-products generated in the reaction can be collected and discharged outside the reaction chamber 20.

[0065] In some embodiments, a suction device is provided inside the venting box 90, which can provide suction force to draw the generated by-products into the venting box 90. The venting box 90 can be used for temporary storage of by-products, and an exhaust port is provided on the top wall of the venting box 90 to discharge the by-products for processing.

[0066] In this configuration, when multiple reaction chambers 20 are respectively located on both sides of the inlet box 30, the outlet box 90 is located on the side of the inlet box 30 away from the multiple reaction chambers 20. That is, an outlet box 90 is provided on both opposite side walls of the furnace body 10. This ensures that the byproducts generated by each reaction chamber 20 can be drawn into the corresponding outlet box 90.

[0067] In one specific embodiment, the furnace door and the gas outlet box 90 of the vapor deposition furnace are located on the same side wall of the furnace body 10.

[0068] In some embodiments, both the inner cavity of the furnace body 10 and the reaction chamber 20 are rectangular parallelepiped structures. This structure allows the shape of the inner cavity of the furnace body 10 to be adapted to the shape of the reaction chamber 20, thereby fully utilizing the space within the inner cavity of the furnace body 10, arranging a sufficient number of reaction chambers 20, and improving the space utilization rate of the inner cavity of the furnace body 10.

[0069] In existing chemical vapor deposition (CVD) furnaces, to meet the production needs of most products, the furnace body 10 is mostly a large-capacity, large-volume cylindrical CVD furnace. Because the furnace body 10 is cylindrical and the material rack 60 is generally a cuboid structure, a large amount of internal space is wasted, resulting in high energy consumption and gas consumption during production. The cuboid furnace body 10 structure of this embodiment, adapted to the shape of the material rack 60, ensures efficient space utilization, allows for faster gas-workpiece contact, avoids gas waste in large spaces, improves raw material utilization, reduces energy consumption, and guarantees product output. Simultaneously, the reduced volume of the reaction chamber 20 decreases gas flow time and heating time, and the ability to assemble the workpiece 1 outside the furnace body 10 further improves production efficiency.

[0070] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0071] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0072] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0073] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0074] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A vapor deposition furnace, characterized in that, include: The furnace body has multiple non-communicating reaction chambers, each of which is provided with a workpiece placement position and a first air inlet and a first air outlet connected to the workpiece placement position. An air inlet box is disposed inside the furnace body. The air inlet box has multiple second air outlets. Multiple first air inlets and multiple second air outlets are connected in a one-to-one correspondence. Multiple reaction chambers are arranged sequentially around the outer periphery of the air inlet box.

2. The vapor deposition furnace according to claim 1, characterized in that, The vapor deposition furnace also includes: Multiple partition plates are provided, with the air inlet box abutting against the side wall of the furnace body, and the multiple partition plates are arranged at intervals on both sides of the air inlet box along the extension direction of the air inlet box; Multiple insulation plates are respectively disposed on the outer wall of the air inlet box and the inner wall of the furnace body. The outer edge of the partition plate abuts against the insulation plate on the outer wall of the air inlet box and the insulation plate on the inner wall of the furnace body, so as to divide the furnace body into multiple non-communicating reaction chambers.

3. The vapor deposition furnace according to claim 1, characterized in that, The vapor deposition furnace also includes: A baffle is detachably installed on the inner wall of the reaction chamber.

4. The vapor deposition furnace according to claim 3, characterized in that, The reaction chamber has a top wall, a bottom wall, and four side walls arranged between the top wall and the bottom wall and connected in sequence. The first air inlet and the first air outlet pass through two of the opposite side walls. The top wall and the other two opposite side walls are each provided with the baffle. And / or, The surface of the baffle is provided with a protective coating.

5. The vapor deposition furnace according to any one of claims 1 to 4, characterized in that, The vapor deposition furnace also includes: The material rack is set in the reaction chamber in a removable manner, and the workpiece placement position is set in the material rack.

6. The vapor deposition furnace according to claim 5, characterized in that, The workpiece placement position includes a horizontal placement station for placing the workpiece horizontally, and the material rack has multiple horizontal placement stations arranged sequentially along the vertical direction. or, The workpiece placement position includes a vertical placement station for placing the workpiece vertically, and the material rack has multiple vertical placement stations arranged sequentially in the horizontal direction.

7. The vapor deposition furnace according to claim 5, characterized in that, The vapor deposition furnace also includes: A rotating tray is rotatably disposed within the reaction chamber, and a material rack is removably placed on the rotating tray.

8. The vapor deposition furnace according to any one of claims 1 to 4, characterized in that, The vapor deposition furnace also includes: A heating element, wherein the heating element is disposed in the furnace body, and / or, wherein the heating element is disposed in the reaction chamber.

9. The vapor deposition furnace according to any one of claims 1 to 4, characterized in that, The vapor deposition furnace further includes a gas outlet box, which is disposed on the side wall of the furnace body and is connected to the first gas outlet.

10. The vapor deposition furnace according to any one of claims 1 to 4, characterized in that, The inner cavity of the furnace body and the reaction chamber are both rectangular parallelepiped structures.

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