Crystal growing device

Abstract

The invention discloses a crystal growth device, and relates to the technical field of crystal growth, the crystal growth device comprises a furnace body, a crystal growth mechanism, a thermal insulation layer and a gas conveying mechanism, the furnace body is provided with a gas inlet, the crystal growth mechanism and the thermal insulation layer are arranged in the furnace body, the thermal insulation layer defines a mounting space, the crystal growth mechanism is arranged in the mounting space, and the gas conveying mechanism is arranged in the mounting space. The gas conveying mechanism is arranged in the furnace body and provided with a first gas inlet and a first gas outlet which are communicated, the first gas inlet is communicated with the gas inlet, and the first gas outlet is communicated with the installation space so that gas can flow into the installation space through the gas conveying mechanism. According to the crystal growth device, the probability that the process gas flows through the thermal insulation layer and corrodes the thermal insulation layer can be reduced, the loss of the process gas can be reduced, the stability of the thermal insulation performance of the thermal insulation layer can be improved, the service life of the thermal insulation layer can be prolonged, and the quality of crystals produced by the crystal growth mechanism can be improved.

Description

Technical Field

[0001] This invention relates to the field of crystal growth technology, and in particular to a crystal growth apparatus. Background Technology

[0002] In related technologies, when existing crystal growth devices introduce process gas into the crystal growth mechanism, the process gas flows through the insulation layer, which corrodes the insulation layer, thus affecting its insulation performance and also causing waste of process gas. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one objective of this invention is to provide a crystal growth apparatus that can reduce the probability of process gases flowing through and corroding the insulation layer, thereby reducing process gas loss, improving the stability of the insulation performance of the insulation layer, extending the service life of the insulation layer, and improving the quality of crystals produced by the crystal growth mechanism.

[0004] According to an embodiment of the present invention, a crystal growth apparatus includes: a furnace body, a crystal growth mechanism, a heat insulation layer, and a gas delivery mechanism. The furnace body has an air inlet. The crystal growth mechanism and the heat insulation layer are both disposed within the furnace body. The heat insulation layer defines an installation space. The crystal growth mechanism is disposed within the installation space. The gas delivery mechanism is disposed within the furnace body. The gas delivery mechanism has a first gas inlet and a first gas outlet that communicate with each other. The first gas inlet communicates with the air inlet, and the first gas outlet communicates with the installation space so that gas flows into the installation space through the gas delivery mechanism.

[0005] According to the crystal growth apparatus of this application embodiment, by setting a gas delivery mechanism, the process gas can be delivered separately, which can reduce the probability of the process gas flowing through the insulation layer and corroding the insulation layer, which is beneficial to reduce the loss of process gas, improve the stability of the insulation performance of the insulation layer, extend the service life of the insulation layer, and also reduce the probability of impurities in the insulation layer mixed in the process gas, which is beneficial to improve the quality of the crystals produced by the crystal growth mechanism.

[0006] According to some embodiments of the present invention, the gas delivery mechanism passes through the insulation layer such that the first gas inlet is located outside the insulation layer and the first gas outlet is located within the installation space.

[0007] According to some embodiments of the present invention, the gas delivery mechanism includes: a first delivery section and a second delivery section, the first delivery section and the second delivery section being connected to connect the first gas inlet and the first gas outlet, the first delivery section being located outside the insulation layer and having the first gas inlet formed therein, and the second delivery section being inserted through the insulation layer and having the first gas outlet formed therein.

[0008] According to some embodiments of the present invention, the first conveying unit includes: a first body and a second body connected together, the first body defining an air inlet groove that opens to the air inlet, the air inlet groove being the first gas inlet, and the second body connecting the first gas inlet and the second conveying unit.

[0009] According to some embodiments of the present invention, the second conveying section is formed with a gas inflow channel, the gas inflow channel connecting the first conveying section and the first gas outlet.

[0010] According to some embodiments of the present invention, the second conveying part includes: a first connecting part, a through part and a second connecting part, the through part being connected between the first connecting part and the second connecting part, the through part being through the insulation layer, the first connecting part being located outside the insulation layer and being connected to the first conveying part so that the gas inflow channel is connected to the first conveying part, and the second connecting part being located inside the insulation layer and forming the first gas outlet.

[0011] According to some embodiments of the present invention, the gas inflow channel includes a first channel, a second channel and a third channel, the first connecting portion forms the first channel, the through portion forms the second channel, the second connecting portion forms the third channel, and the second channel connects the first channel and the third channel.

[0012] According to some embodiments of the present invention, the crystal growth apparatus further includes: a gas output mechanism, the furnace body having a gas outlet, the gas output mechanism being disposed inside the furnace body and located outside the insulation layer, and a second conveying section connecting the gas output mechanism and the installation space, so that gas in the installation space flows along the second conveying section and the gas output mechanism to the gas outlet.

[0013] According to some embodiments of the present invention, the second conveying section has a gas outflow channel that connects the gas output mechanism and the installation space.

[0014] According to some embodiments of the present invention, the second conveying unit has a communicating second gas inlet and a communicating second gas outlet, the second gas inlet being located within the installation space, and the second gas outlet being communicating with the gas output mechanism.

[0015] According to some embodiments of the present invention, the second conveying section is formed with a temperature measuring space to measure the temperature of the side of the crystal growth mechanism facing the second conveying section.

[0016] According to some embodiments of the present invention, the crystal growth apparatus further includes: a shielding structure disposed within the installation space, wherein at least a portion of the inner wall of the installation space is provided with the shielding structure.

[0017] According to some embodiments of the present invention, the insulation layer has a first wall portion, the first wall portion and the crystal growth mechanism are spaced apart to form a gas flow gap between the first wall portion and the crystal growth mechanism, and the first gas outlet is in communication with the gas flow gap.

[0018] According to some embodiments of the present invention, the crystal growth mechanism has a cover plate on which an air inlet is formed, the air inlet communicating with the interior of the crystal growth mechanism and the mounting space.

[0019] According to some embodiments of the present invention, the crystal growth apparatus further includes a support ring located on the side of the cover plate facing the insulation layer, the support ring being used to cover the air inlet.

[0020] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0021] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0022] Figure 1 This is a schematic diagram of a crystal growth apparatus according to an embodiment of this application;

[0023] Figure 2 This is a schematic diagram of the first conveying section according to an embodiment of this application;

[0024] Figure 3 This is a schematic diagram of the second conveying unit according to an embodiment of this application;

[0025] Figure 4 This is a schematic diagram of a cover plate according to an embodiment of this application;

[0026] Figure 5 This is a schematic diagram of a support ring according to an embodiment of this application;

[0027] Figure 6 This is a comparison diagram of the temperature changes of the crystal growth apparatus in this application embodiment and the temperature changes of crystal growth apparatus in the prior art.

[0028] Figure label:

[0029] Crystal growth apparatus 1,

[0030] Furnace body 10, air inlet 11, air outlet 12, purge gas inlet 13,

[0031] Crystal growth mechanism 20, cover plate 21, air inlet 211, main body of mechanism 22.

[0032] Insulation layer 30, installation space 31, first wall portion 32

[0033] Gas conveying mechanism 40, first gas inlet 41, first gas outlet 42, first conveying section 43, first body 431, air inlet groove 4311, second body 432, second conveying section 44, gas inflow channel 441, first connecting section 442, through section 443, second connecting section 444, gas outflow channel 445, second gas inlet 446, second gas outlet 447, temperature measuring space 448.

[0034] Gas output mechanism 50,

[0035] Shielding structure 60,

[0036] Gas flow gap 70,

[0037] Support ring 80. Detailed Implementation

[0038] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0039] The following is for reference. Figures 1-6 A crystal growth apparatus 1 according to an embodiment of the present invention is described.

[0040] According to an embodiment of the crystal growth apparatus 1, such as Figures 1-4 As shown, the crystal growth apparatus 1 may include: a furnace body 10, a crystal growth mechanism 20, a heat insulation layer 30, and a gas delivery mechanism 40. The furnace body 10 has an air inlet 11. The crystal growth mechanism 20 and the heat insulation layer 30 are both located inside the furnace body 10. The heat insulation layer 30 defines an installation space 31. The crystal growth mechanism 20 is located inside the installation space 31. The gas delivery mechanism 40 is located inside the furnace body 10. The gas delivery mechanism 40 has a first gas inlet 41 and a first gas outlet 42 that are connected. The first gas inlet 41 is connected to the air inlet 11, and the first gas outlet 42 is connected to the installation space 31 so that gas flows into the installation space 31 through the gas delivery mechanism 40.

[0041] It should be noted that when the process gas is introduced into the crystal growth mechanism in the existing crystal growth device, the process gas flows through the insulation layer. The process gas will corrode the insulation layer, thereby affecting the insulation performance of the insulation layer. It will also cause waste of process gas. In addition, the process gas may carry some impurities in the insulation layer to participate in crystal growth, affecting the quality of the crystals produced by the crystal growth device.

[0042] Based on this, this application proposes a crystal growth apparatus 1, which can be used to produce silicon carbide single crystals, aluminum nitride single crystals, etc. This application example uses the physical vapor transport method (PVT) to produce silicon carbide single crystals. The furnace body 10 can have an air inlet 11, which can be located on the top wall of the furnace body 10 and penetrate the top wall of the furnace body 10 along its thickness direction. Process gas, such as hydrogen, can flow into the furnace body 10 through the air inlet 11. The crystal growth mechanism 20 and the insulation layer 30 can both be located within the furnace body 10. The insulation layer 30 defines an installation space 31, within which the crystal growth mechanism 20 can be located. The insulation layer 30 can be composed of insulation felt, which provides thermal insulation and stabilizes the temperature of the crystal growth mechanism 20.

[0043] The crystal growth mechanism 20 can be disposed within the mounting space 31 and can be used to produce silicon carbide crystals. As an example, the crystal growth mechanism 20 may include a cover and a main body 22. Both the cover and the main body 22 can have circular cross-sections. The cover may have internal threads, and the main body 22 may have external threads. The cover can be assembled with the main body 22. Both the cover and the main body 22 can be made of graphite. When the crystal growth mechanism 20 is used to produce silicon carbide crystals, high-purity silicon carbide powder can be placed at the bottom of the main body 22. A seed crystal can be provided at the center of the cover. The silicon carbide powder can sublimate to form silicon carbide gas, which can be transported to the lower-temperature seed crystal and crystallize on the seed crystal to grow silicon carbide crystals. When the crystal growth apparatus 1 is used to produce semi-insulating silicon carbide crystals, by mixing powdered vanadium tetrachloride into the silicon carbide powder at the bottom of the main body 22 of the apparatus and introducing hydrogen gas as a reducing gas, the nitrogen doping concentration can be adjusted, thereby effectively controlling the electrical properties of the silicon carbide crystal. Hydrogen gas can participate in the reaction during the crystal growth process as a process gas. This embodiment of the application uses the introduction of hydrogen gas into the crystal growth apparatus 1 as an example for illustration.

[0044] The furnace body 10 may also be equipped with a gas conveying mechanism 40, which can be used to convey process gases to the crystal growth mechanism 20. The gas conveying mechanism 40 may have a first gas inlet 41 and a first gas outlet 42 connected together. The first gas inlet 41 may be connected to the gas inlet 11, and the process gas can flow into the gas conveying mechanism 40 through the gas inlet 11 and the first gas outlet 42. The first gas outlet 42 may be connected to the installation space 31, so that the process gas (i.e., hydrogen) can flow into the installation space 31 through the gas conveying mechanism 40. This allows the process gas to flow into the installation space 31 without having to flow through the insulation layer 30, which helps to reduce the probability of the process gas corroding the insulation layer 30, reduces the probability of impurities in the insulation layer 30 mixed in with the process gas, improves the stability of the insulation performance of the insulation layer 30, extends the service life of the insulation layer 30, reduces the loss of process gas, and improves the quality of the crystals produced by the crystal growth mechanism 20. After the process gas flows into the installation space 31, the process gas in the installation space 31 can enter the crystal growth mechanism 20 and participate in the reaction during the crystal growth process.

[0045] As an example, both the cover and the main body 22 of the crystal growth mechanism 20 can be made of graphite. Gas located in the mounting space 31 can permeate into the interior of the crystal growth mechanism 20, allowing the process gas to participate in the reaction during crystal growth. As another example, a first air inlet can be formed on the cover of the crystal growth mechanism 20. The first air inlet can penetrate the cover along its thickness direction, allowing the process gas in the mounting space 31 to flow into the interior of the crystal growth mechanism 20 through the first air inlet, thus enabling the process gas to participate in the reaction during crystal growth.

[0046] In this embodiment, by setting up a gas delivery mechanism 40, the process gas can be delivered separately, which can reduce the probability of the process gas flowing through the insulation layer 30 and corroding the insulation layer 30. This is beneficial to reduce the loss of process gas, improve the stability of the insulation performance of the insulation layer 30, extend the service life of the insulation layer 30, and reduce the probability of impurities in the insulation layer 30 mixed in with the process gas, thereby improving the quality of the crystals produced by the crystal growth mechanism 20.

[0047] As an example, the furnace body 10 may also have a purge gas inlet 13, through which purge gas can flow into the interior of the furnace body 10. The purge gas can be used to purge impurities in the insulation layer 30. The purge gas can be argon, which will not corrode the insulation layer 30.

[0048] As an example, the gas delivery mechanism 40 can be made of graphite, which has strong corrosion resistance. The density of the gas delivery mechanism 40 can be ρ, satisfying the relationship: 2 g / cm³. 3 ≤ρ≤2.3g / cm3 For example, the density of the gas delivery mechanism 40 can be 2 g / cm³. 3 2.1g / cm 3 2.2g / cm 3 2.3g / cm 3 The density of the gas conveying mechanism 40 is 2 g / cm³. 3 Up to 2.3 g / cm 3 Any value within the specified range, including endpoint values, represents the density of the optional gas delivery mechanism 40 of this invention. If the density of the gas delivery mechanism 40 is less than 2 g / cm³... 3 This will affect the corrosion resistance of the gas conveying mechanism 40. When the gas conveying mechanism 40 is located inside the furnace body 10, the gas inside the gas conveying mechanism 40 will carry away some of the carbon particles on the gas conveying mechanism 40. After the gas participates in the crystal growth process, it will affect the quality of silicon carbide crystallization. If the density of the gas conveying mechanism 40 is greater than 2.3 g / cm³, it will affect the corrosion resistance of the gas conveying mechanism 40. 3 Therefore, the gas delivery mechanism 40 is made of high-purity graphite. The preparation process of high-purity graphite is complex and costly, and the mechanical strength of high-purity graphite is not high, affecting the reliability of the gas delivery mechanism 40. Therefore, the density of the gas delivery mechanism 40 is 2 g / cm³. 3 Up to 2.3 g / cm 3 This allows the gas delivery mechanism 40 to have strong corrosion resistance and high reliability.

[0049] In some embodiments of the present invention, such as Figure 1 As shown, the gas delivery mechanism 40 passes through the insulation layer 30, so that the first gas inlet 41 is located outside the insulation layer 30 and the first gas outlet 42 is located inside the installation space 31.

[0050] The two ends of the gas delivery mechanism 40 can be located inside and outside the insulation layer 30, respectively, and the gas delivery mechanism 40 can penetrate the insulation layer 30. The first gas inlet 41 can be located outside the insulation layer 30, that is, the first gas outlet 42 can be located on the side of the insulation layer 30 away from the mounting space 31. The first gas outlet 42 can be located inside the mounting space 31, that is, the gas delivery mechanism 40 can extend into the mounting space 31. The insulation layer 30 can define the mounting space 31, the crystal growth mechanism 20 is located inside the mounting space 31, and the gas delivery mechanism 40 can be used to deliver process gas to the crystal growth mechanism 20. By incorporating a gas delivery mechanism 40 that penetrates the insulation layer 30, the probability of process gas flowing through and corroding the insulation layer 30 is further reduced. This improves the stability of the insulation performance of the insulation layer 30, extends its service life, reduces process gas loss, and decreases the probability of impurities from the insulation layer 30 being mixed in with the process gas, thus improving the quality of crystals produced by the crystal growth mechanism 20. Furthermore, it enhances the structural compactness of the insulation layer 30 and the gas delivery mechanism 40, improving the space utilization within the crystal growth apparatus 1.

[0051] In some embodiments of the present invention, such as Figure 1 As shown, the gas delivery mechanism 40 may include: a first delivery section 43 and a second delivery section 44, the first delivery section 43 and the second delivery section 44 are connected to connect the first gas inlet 41 and the first gas outlet 42, the first delivery section 43 is located outside the insulation layer 30 and has the first gas inlet 41, and the second delivery section 44 passes through the insulation layer 30 and has the first gas outlet 42.

[0052] The first conveying section 43 can be located at the end of the gas conveying mechanism 40 near the gas inlet 11, and the first conveying section 43 can form a first gas inlet 41. The second conveying section 44 can pass through the insulation layer 30, and the second conveying section 44 can form a first gas outlet 42. The first conveying section 43 and the second conveying section 44 can be interconnected, thereby allowing the first gas inlet 41 and the first gas outlet 42 to be connected. Process gas can flow into the first conveying section 43 through the first gas inlet 41, and the process gas can flow through the first conveying section 43 and the second conveying section 44 and flow into the installation space 31 from the first gas outlet 42. The process gas can enter the crystal growth mechanism 20 and participate in the reaction during the crystal growth process. Before flowing into the installation space 31, the process gas always flows within the gas delivery mechanism 40. The process gas is separated from the insulation layer 30, which helps to further reduce the probability of the process gas flowing through the insulation layer 30 and corroding it, further reduce the loss of process gas, further improve the stability of the insulation performance of the insulation layer 30, further extend the service life of the insulation layer 30, further reduce the probability of impurities from the insulation layer 30 mixed in with the process gas, and further improve the quality of the crystals produced by the crystal growth mechanism 20.

[0053] In some embodiments of the present invention, such as Figure 2 As shown, the first conveying unit 43 may include: a first body 431 and a second body 432 connected together. The first body 431 defines an air inlet groove 4311 that is open to the air inlet 11. The air inlet groove 4311 is a first gas inlet 41. The second body 432 connects the first gas inlet 41 and the second conveying unit 44.

[0054] The first conveying section 43 may include a first body 431 and a second body 432 connected together. The first body 431 and the second body 432 may be integrally formed. The first body 431 may be located at the end of the first conveying section 43 away from the second conveying section 44, and the second body 432 may be connected to the second conveying section 44. The first body 431 may define an air inlet groove 4311, which may be open to the air inlet 11. The air inlet groove 4311 may be arranged opposite to the air inlet 11. When the crystal growth apparatus 1 is arranged in the vertical direction, the air inlet groove 4311 may be located below the air inlet 11. The cross-sectional area of ​​the air inlet groove 4311 can be larger than that of the air inlet 11. The sidewall of the air inlet groove 4311 can be arranged around the air inlet 11 circumferentially. When the process gas flows from the air inlet 11 to the air inlet groove 4311, the probability of the process gas escaping from the gap between the air inlet 11 and the air inlet groove 4311 can be effectively reduced, which helps to reduce the probability of the process gas flowing to the insulation layer 30 and corroding the insulation layer 30. As an example, the air inlet groove 4311 can be constructed as a funnel-shaped or U-shaped structure, etc.

[0055] The air inlet groove 4311 can be a first gas inlet 41, and a first air outlet can be formed on the bottom wall of the air inlet groove 4311. The second body 432 can be connected to the first air outlet and the first gas inlet 41 and the second conveying part 44. The process gas can flow into the second body 432 through the air inlet 11 and the air inlet groove 4311, thereby further realizing the effect of separately conveying the process gas, which is conducive to further reducing the probability of the process gas flowing to the insulation layer 30 and corroding the insulation layer 30.

[0056] It should be noted that the gas delivery mechanism 40 is located between the gas inlet 11 and the crystal growth mechanism 20. The gas delivery mechanism 40 can be used to deliver process gas from the gas inlet 11 to the crystal growth mechanism 20. When the crystal growth mechanism 20 is used to produce crystals, the crystal growth mechanism 20 may move. By setting the gas inlet 11 and the gas inlet groove 4311 to be opposite each other and not directly connected, the assembly and movement of the crystal growth mechanism 20 can be facilitated, which helps to reduce the probability of damage to the gas delivery mechanism 40 caused by the movement of the crystal growth mechanism 20, and helps to extend the service life of the gas delivery mechanism 40.

[0057] In some embodiments of the present invention, such as Figure 1 As shown, the second conveying section 44 has a gas inflow channel 441, which connects the first conveying section 43 and the first gas outlet 42.

[0058] The second conveying section 44 can form a gas inflow channel 441, in which process gas can flow. The gas inflow channel 441 can connect the first conveying section 43 and the first gas outlet 42, so that process gas can flow from the first conveying section 43 to the first gas outlet 42. The gas inflow channel 441 can guide the gas in the second conveying section 44, which is conducive to achieving the effect of directional conveying of process gas and improving the working efficiency of gas flow into the installation space 31.

[0059] In some embodiments of the present invention, such as Figure 3 As shown, the second conveying part 44 may include: a first connecting part 442, a through part 443, and a second connecting part 444. The through part 443 is connected between the first connecting part 442 and the second connecting part 444 and is inserted through the insulation layer 30. The first connecting part 442 is located outside the insulation layer 30 and is connected to the first conveying part 43 so that the gas inflow channel 441 is connected to the first conveying part 43. The second connecting part 444 is located inside the insulation layer 30 and has a first gas outlet 42.

[0060] The first connecting portion 442, the through portion 443, and the second connecting portion 444 can be connected sequentially, with the through portion 443 connecting between the first connecting portion 442 and the second connecting portion 444. The through portion 443 can pass through the insulation layer 30, with its two ends located on the outside and inside of the insulation layer 30, respectively. The first connecting portion 442 can be located on the outside of the insulation layer 30 and can be connected to the first conveying portion 43, thereby allowing the gas inflow channel 441 to communicate with the first conveying portion 43. The second connecting portion 444 can be located inside the insulation layer 30 and can form a first gas outlet 42, allowing gas in the gas inflow channel 441 to flow into the installation space 31.

[0061] By providing the first connecting part 442, the penetrating part 443, and the second connecting part 444, the process gas can flow from the outside of the insulation layer 30 to the inside of the insulation layer 30 while remaining separated from the insulation layer 30. This helps to reduce the probability of the process gas corroding the insulation layer 30 while introducing the process gas into the crystal growth mechanism 20, further reduces the loss of the process gas, improves the stability of the insulation performance of the insulation layer 30, extends the service life of the insulation layer 30, and further reduces the probability of impurities from the insulation layer 30 mixed in with the process gas, thus further improving the quality of the crystals produced by the crystal growth mechanism 20.

[0062] In some embodiments of the present invention, the gas inflow channel 441 may include a first channel, a second channel and a third channel, a first connecting portion 442 forms the first channel, a through portion 443 forms the second channel, a second connecting portion 444 forms the third channel, and the second channel connects the first channel and the third channel.

[0063] The first, second, and third channels can be arranged sequentially along the arrangement direction of the first connecting portion 442, the through portion 443, and the second connecting portion 444, and can be connected sequentially. The first connecting portion 442 can form a first channel, which connects the first conveying portion 43 and the through portion 443. The through portion 443 can form a second channel, and the second connecting portion 444 can form a third channel, which connects the first and third channels. The third channel can connect to the first gas outlet 42. The gas in the first conveying portion 43 can flow through the first, second, and third channels into the installation space 31, further guiding the gas in the second conveying portion 44, which is beneficial for achieving directional conveying of process gas and improving the efficiency of gas flow into the installation space 31.

[0064] In some embodiments of the present invention, such as Figure 1As shown, the crystal growth apparatus 1 may further include: a gas output mechanism 50, a furnace body 10 having a gas outlet 12, the gas output mechanism 50 being located inside the furnace body 10 and outside the insulation layer 30, and a second conveying section 44 connecting the gas output mechanism 50 and the installation space 31, so that the gas in the installation space 31 flows along the second conveying section 44 and the gas output mechanism 50 to the gas outlet 12.

[0065] The furnace body 10 can have a gas outlet 12, through which gas inside the furnace body 10 can be discharged. Process gases, purging gases, etc., can all be discharged through the gas outlet 12. A gas output mechanism 50 can be located inside the furnace body 10, and can be situated outside the insulation layer 30. A second conveying section 44 can connect the gas output mechanism 50 to the installation space 31. Unused process gas in the installation space 31 can flow into the gas output mechanism 50 through the second conveying section 44, meaning excess process gas in the installation space 31 can flow out through the second conveying section 44. The inlet of the gas output mechanism 50 can be connected to the second conveying section 44, and the outlet of the gas output mechanism 50 can be located near the gas outlet 12. Gas in the installation space 31 can flow along the second conveying section 44 and the gas output mechanism 50 towards the gas outlet 12, thereby achieving the effect of discharging unused process gas from the furnace body 10 of the crystal growth apparatus 1. Furthermore, by setting the gas in the installation space 31 to flow to the outlet 12 through the second conveying part 44 and the gas output mechanism 50, the second conveying part 44 is installed through the insulation layer 30 and the gas output mechanism 50 can be located outside the insulation layer 30, which can reduce the probability of unused process gas corroding the insulation layer 30, which is conducive to further improving the stability of the insulation performance of the insulation layer 30, further extending the service life of the insulation layer 30, and further reducing the waste of process gas.

[0066] As an example, the gas output mechanism 50 can extend downwards along the side wall of the insulation layer 30. The outlet height of the gas output mechanism 50 can be lower than the bottom wall height of the insulation layer 30, which helps reduce the probability of gas flowing out of the gas output mechanism 50 diffusing into the insulation layer 30, and further reduces the probability of process gas corroding the insulation layer 30. The outlet height of the gas output mechanism 50 can be higher than the outlet height of the gas outlet 12, and the diameter of the outlet of the gas output mechanism 50 is smaller than the diameter of the gas outlet 12 of the furnace body 10, so that the gas can be smoothly discharged from the gas outlet 12.

[0067] In some embodiments of the present invention, such as Figure 1 As shown, the second conveying section 44 has a gas outflow channel 445, which connects the gas output mechanism 50 and the installation space 31.

[0068] The second conveying section 44 can form a gas outlet channel 445. One end of the gas outlet channel 445 can be connected to the gas output mechanism 50, and the other end can be connected to the installation space 31. Excess process gas in the installation space 31 can flow in the gas outlet channel 445. The gas outlet channel 445 can connect the gas output mechanism 50 and the installation space 31, so that the excess process gas in the installation space 31 can flow from the installation space 31 to the gas output mechanism 50, and then to the gas outlet 12 through the gas output mechanism 50. The gas outlet channel 445 can further guide the gas in the second conveying section 44, which is conducive to the directional discharge of excess process gas in the installation space 31 and improves the efficiency of excess process gas flowing to the outside of the furnace body 10. By integrating both the gas inlet channel 441 and the gas outlet channel 445 into the second conveying section 44, the space utilization rate inside the furnace body 10 is improved.

[0069] As an example, the gas outlet channel 445 may include a fourth channel, a fifth channel, and a sixth channel. The first connecting portion 442 may also form a fourth channel, the through portion 443 may also form a fifth channel, and the second connecting portion 444 may also form a sixth channel. The fifth channel connects the fourth channel and the sixth channel. The fourth channel, the fifth channel, and the sixth channel can be connected sequentially. Unused process gas in the installation space 31 can flow through the sixth channel, the fifth channel, and the fourth channel before flowing into the gas output mechanism 50. This can further guide the gas in the second conveying portion 44, which is beneficial for achieving the effect of directional discharge of excess process gas in the installation space 31 and further improving the efficiency of excess process gas flowing to the outside of the furnace body 10.

[0070] The first, second, and third channels are configured as gas inflow channels 441, and the fourth, fifth, and sixth channels are configured as gas outflow channels 445. A first baffle can be provided between the first and fourth channels, and the first and fourth channels can be spaced apart and not connected, which helps reduce the probability of gas interference within the first and fourth channels. A second baffle can be provided between the second and fifth channels, and the second and fifth channels can be spaced apart and not connected, which helps reduce the probability of gas interference within the second and sixth channels. A third baffle can be provided between the third and sixth channels, and the third and sixth channels can be spaced apart and not connected, which helps reduce the probability of gas interference within the third and sixth channels. By setting the gas inflow channels 441 and the gas outflow channels 445 to be independent and non-interfering, the gas transmission efficiency within the second conveying section 44 is further improved.

[0071] In some embodiments of the present invention, such as Figure 3 As shown, the second conveying unit 44 has a connected second gas inlet 446 and a second gas outlet 447. The second gas inlet 446 is located in the installation space 31, and the second gas outlet 447 is connected to the gas output mechanism 50.

[0072] The second conveying unit 44 may have a second gas inlet 446 and a second gas outlet 447, which are interconnected. The second gas inlet 446 may be configured as the inlet of the gas outlet channel 445, and the second gas outlet 447 may be configured as the outlet of the gas outlet channel 445. The second gas inlet 446 may be located within the installation space 31, allowing unused process gas within the installation space 31 to flow into the gas outlet channel 445 through the second gas inlet 446. The second gas outlet 447 may be connected to the gas output mechanism 50, allowing gas within the gas outlet channel 445 to flow into the gas output mechanism 50 through the second gas outlet 447, thereby further achieving the effect of discharging unused process gas from the installation space 31 into the furnace body 10.

[0073] As an example, the first connecting part 442 is located outside the insulation layer 30, the second gas outlet 447 can be provided on the first connecting part 442, the second connecting part 444 is located inside the insulation layer 30, and the second gas inlet 446 can be provided on the second gas inlet 446.

[0074] As an example, the second connecting portion 444 may be provided with multiple first gas outlets 42, which is beneficial to improving the output efficiency of the gas in the gas inflow channel 441, and also allows the gas flowing out of the gas inflow channel 441 to be evenly distributed between the second conveying portion 44 and the crystal growth mechanism 20, which is beneficial to improving the stability of the process gas flow into the crystal growth mechanism 20. In addition, the second connecting portion 444 may be provided with multiple second gas inlets 446, which is beneficial to improving the efficiency of unused process gas flowing into the gas outflow channel 445, and to improving the discharge efficiency of excess process gas in the installation space 31.

[0075] In some embodiments of the present invention, such as Figure 1 and Figure 3 As shown, the second transport section 44 has a temperature measuring space 448 to measure the temperature of the side of the crystal growth mechanism 20 facing the second transport section 44.

[0076] The second conveying section 44 can form a temperature measuring space 448, which is independent of and not connected to the gas inflow channel 441 and the gas outflow channel 445. As an example, the first connecting part 442, the through part 443 and the second connecting part 444 can all be constructed as annular structures. The first connecting part 442, the through part 443 and the second connecting part 444 can be integrally formed. The first connecting part 442, the through part 443 and the second connecting part 444 can jointly define the temperature measuring space 448. The first connecting part 442, the through part 443 and the second connecting part 444 can jointly form the sidewall of the temperature measuring space 448. The temperature measuring space 448 can penetrate the second conveying section 44 along the arrangement direction of the first connecting portion 442, the through portion 443, and the second connecting portion 444. The temperature measuring space 448 can be used to measure the temperature of the side of the crystal growth mechanism 20 facing the second conveying section 44. The process gas can flow in the gas inflow channel 441 and the gas outflow channel 445 of the second conveying section 44. The gas in the second conveying section 44 can be separated from the temperature measuring space 448, which helps to reduce the probability that the temperature of the gas in the second conveying section 44 will affect the temperature measurement result. As an example, the first gas inlet 41 and the second gas outlet 447 can both be arranged radially along the first connecting portion 442 on the side of the second conveying section 44 away from the temperature measuring space 448. The first gas inlet 41 and the second gas outlet 447 can be arranged opposite each other radially along the first connecting portion 442. The first gas outlet 42 and the second gas inlet 446 can both be separated from the temperature measuring space 448, which helps to reduce the probability that the gas in the second conveying section 44 will affect the temperature measurement result in the temperature measuring space 448.

[0077] As an example, the crystal growth apparatus 1 can use an infrared thermometer to measure the temperature in the temperature measurement space 448. The infrared thermometer can be located on the side of the second transport section 44 away from the crystal growth mechanism 20. The infrared thermometer can emit infrared light into the crystal growth mechanism 20 to measure the temperature of the crystal growth mechanism 20.

[0078] As an example, the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 can be H1, satisfying the relationship: 2mm ≤ H1 ≤ 10mm. Exemplarily, the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 can be 2mm, 3.6mm, 5.2mm, 8.7mm, 10mm, etc. The distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 can be within the range of 2mm to 10mm. Any value, including the endpoint value, is an optional distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 in this invention. If the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 is less than 2mm, the distance between the second conveying section 44 and the crystal growth mechanism 20 is too small, and the heat generated by the gas flowing in the second conveying section 44 will affect the crystal growth mechanism 20. If the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 is greater than 10mm, the distance between the two sections is too large. Gas flowing out of the second conveying section 44 may then flow into the temperature measurement space 448 through the gap between the two sections, affecting the temperature measurement results. Therefore, the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20 should be between 2mm and 10mm. This reduces the impact of heat generated by the gas in the second conveying section 44 on the crystal growth mechanism 20 and also lowers the probability that the gas flowing out of the second conveying section 44 will affect the temperature measurement results.

[0079] In some embodiments of the present invention, such as Figure 1 As shown, the crystal growth apparatus 1 may further include a shielding structure 60, which is disposed within the installation space 31, and at least a portion of the inner wall of the installation space 31 is provided with the shielding structure 60.

[0080] The shielding structure 60 can be disposed within the installation space 31, or on the outside of the crystal growth mechanism 20. At least a portion of the inner wall of the installation space 31 can be provided with the shielding structure 60, which can be disposed between at least a portion of the insulation layer 30 and the crystal growth mechanism 20. The shielding structure 60 can isolate gases, further reducing the probability of process gases diffusing into the insulation layer 30, thus extending the service life of the insulation layer 30 and improving the stability of its insulation performance. Furthermore, the shielding structure 60 can also improve the stability of heat generation and dissipation of the crystal growth mechanism 20.

[0081] As an example, shielding structures 60 can be provided on the side walls, top walls, and bottom walls of the installation space 31, that is, shielding structures 60 can be provided between the insulation layer 30 and the crystal growth mechanism 20. If shielding structures 60 are only provided on the side walls and bottom walls of the installation space 31, the top height of the shielding structure 60 on the side wall of the installation space 31 can be higher than the top height of the crystal growth mechanism 20, and the height difference between the top of the shielding structure 60 on the side wall of the installation space 31 and the top of the crystal growth mechanism 20 can be H2, satisfying the relationship: 10mm≤H2≤20mm. For example, the height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 can be 10mm, 12mm, 15mm, 17.5mm, 20mm, etc. The height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 can be in the range of 10mm to 20mm. Any value, including the endpoint value, is an optional height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 in this invention.

[0082] If the height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 is less than 10 mm, the height difference may be less than the distance between the end face of the second conveying section 44 facing the crystal growth mechanism 20 and the crystal growth mechanism 20. In this case, the process gas flowing out from the second conveying section 44 may diffuse from the top of the mounting space 31 to the insulation layer 30, thereby corroding the insulation layer 30. If the height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 is greater than 20 mm, the distance between the top wall of the mounting space 31 and the top of the crystal growth mechanism 20 is too large, resulting in an excessively large space between them, which may affect the efficiency of the process gas flowing into the crystal growth mechanism 20. Therefore, the height difference between the top of the shielding structure 60 on the side wall of the mounting space 31 and the top of the crystal growth mechanism 20 is between 10mm and 20mm. This can reduce the probability that the process gas flowing out from the second conveying section 44 may diffuse from the top of the mounting space 31 to the insulation layer 30, and also improve the efficiency of the process gas flowing into the crystal growth mechanism 20.

[0083] In some embodiments of the present invention, such as Figure 1 As shown, the insulation layer 30 has a first wall portion 32, which is spaced apart from the crystal growth mechanism 20 to form a gas flow gap 70 between the first wall portion 32 and the crystal growth mechanism 20, and the first gas outlet 42 is connected to the gas flow gap 70.

[0084] The insulation layer 30 may have a first wall portion 32, which may be spaced apart from the crystal growth mechanism 20 and may be positioned opposite to the crystal growth mechanism 20. A gas flow gap 70 may be formed between the first wall portion 32 and the crystal growth mechanism 20. A first gas outlet 42 may be connected to the gas flow gap 70 and may be located within the gas flow gap 70, allowing gas from the gas delivery mechanism 40 to flow into the gas flow gap 70, and allowing process gas within the gas flow gap 70 to flow into the crystal growth mechanism 20. By setting the gas flow gap 70, a process gas buffer zone can be formed between the insulation layer 30 and the crystal growth mechanism 20, which is beneficial for the orderly entry of process gas into the crystal growth mechanism 20 and for improving the stability of process gas participation in the crystal growth process.

[0085] As an example, the first wall portion 32 can be located above the crystal growth mechanism 20, and a shielding structure 60 can be provided between the first wall portion 32 and the crystal growth mechanism 20. The shielding structure 60 provided on the first wall portion 32 can prevent the process gas in the gas flow gap 70 from diffusing to the first wall portion 32 and corroding the first wall portion 32, which is beneficial to further extend the service life of the insulation layer 30 and further improve the stability of the insulation performance of the insulation layer 30.

[0086] In some embodiments of the present invention, such as Figure 1 and Figure 4 As shown, the crystal growth mechanism 20 has a cover plate 21, on which an air inlet 211 is formed, the air inlet 211 connecting the interior of the crystal growth mechanism 20 with the installation space 31.

[0087] The crystal growth mechanism 20 may have a cover plate 21 (i.e., the cover body in the above embodiment). The cover plate 21 may be located on the side of the crystal growth mechanism 20 facing the second conveying part 44. An air inlet 211 (i.e., the first air inlet hole in the above embodiment) may be formed on the cover plate 21. The air inlet 211 may penetrate the cover plate 21 along the thickness direction of the cover plate 21. The air inlet 211 may connect the interior of the crystal growth mechanism 20 with the installation space 31. The gas in the gas flow gap 70 may flow into the interior of the crystal growth mechanism 20 through the air inlet 211, thereby improving the efficiency of the gas in the gas flow gap 70 flowing into the crystal growth mechanism 20 and participating in the crystal growth process, and improving the working efficiency of the crystal growth mechanism 20.

[0088] As an example, there can be multiple air inlets 211, which can be arranged sequentially along the circumference of the cover plate 21. The spacing between multiple air inlets 211 can be the same, which can improve the stability of gas flowing into the crystal growth mechanism 20 within the gas flow gap 70, and is conducive to further improving the stability of process gas participating in the crystal growth process.

[0089] In some embodiments of the present invention, such as Figure 1 and Figure 5 As shown, the crystal growth apparatus 1 may further include a support ring 80, which is located on the side of the cover plate 21 facing the insulation layer 30, and is used to cover the air inlet 211.

[0090] The support ring 80 can be constructed as a ring structure, and its cross-sectional shape can be circular. The support ring 80 can abut against and limit the shielding structure 60 provided on the side wall of the installation space 31. The support ring 80 can be located on the side of the cover plate 21 facing the insulation layer 30. The two ends of the support ring 80 along the thickness direction of the support ring 80 (i.e., the arrangement direction of the cover plate 21 and the insulation layer 30) can abut against the cover plate 21 and the first wall portion 32 respectively. The support ring 80 can separate the first wall portion 32 from the cover plate 21, thereby achieving the effect of defining a gas flow gap 70 between the insulation layer 30 and the crystal growth mechanism 20. When the shielding structure 60 is provided on the first wall portion 32, the support ring 80 can be located below the corresponding shielding structure 60. The shielding structure 60 on the first wall portion 32, the support ring 80, and the cover plate 21 can further define the gas flow gap 70.

[0091] The air inlet 211 can be arranged opposite to the support ring 80 along the arrangement direction of the cover plate 21 and the insulation layer 30. The support ring 80 can be used to cover the air inlet 211. Gas in the gas flow gap 70 can flow through the support ring 80 and then into the air inlet 211, which helps to further buffer the gas in the gas flow gap 70 and improve the stability of the process gas participating in the crystal growth process. As an example, the support ring 80 can be constructed as a porous graphite structure. The support ring 80 can play a certain filtering role for the gas in the gas flow gap 70, which helps to further improve the quality of the crystals produced by the crystal growth apparatus 1.

[0092] As an example, such as Figure 6 As shown, when producing semi-insulating silicon carbide using conventional crystal growth apparatus in the prior art and the crystal growth apparatus of the present application embodiment, the temperature decay changes of the two crystal production apparatuses are compared. The crystal growth mechanism and the material and size of the insulation layer used in the crystal growth apparatus are the same.

[0093] When producing semi-insulating silicon carbide using conventional crystal growth equipment in existing technology, the assembled crystal growth mechanism and insulation layer are placed into the crystal growth equipment. In the initial stage of crystal growth, a constant power is applied to achieve a synthesis temperature of approximately 2250℃. Hydrogen gas is introduced at a rate of 30 sccm during synthesis, and the synthesis time is 120 hours. The temperature decay of the crystal growth equipment under constant power is observed. Temperature data is recorded every 6 hours during the crystal growth process, and the temperature decay is shown in Table 1. During the 120-hour crystal growth period, the temperature decayed from 2250℃ to 2227.4℃, a decrease of 22.6℃. The data recorded in Table 1 are analyzed as a line graph. Figure 6 As shown in curve 1, the temperature decay is accelerated throughout the entire crystal growth period. As the insulation layer is continuously eroded by hydrogen and silicon carbide gases, the gaps at the joints become larger and larger, resulting in a lower temperature at that location. Under the influence of the temperature gradient, more hydrogen and silicon carbide gases accumulate in this area, accelerating the erosion of the insulation layer and causing the temperature decay to accelerate simultaneously.

[0094] Table 1: Temperature decay under constant power in conventional crystal growth apparatuses in the prior art

[0095] Time / h 0 6 12 18 24 30 36 42 48 54 60 66 72 78 84 90 96 102 108 114 120 Temperature / °C 2250 2249.9 2249.7 2249.4 2249 2248.6 2248.1 2247.5 2247 2246.3 2245.4 2244.3 2243.1 2242 2240.8 2239.3 2237.6 2235.5 2233 2230.3 2227.4

[0096] According to the crystal growth apparatus 1 of this application embodiment, the gas inlet 11 is constructed with a U-shaped structure. The diameter of the first gas inlet 41 is larger than the diameter of the gas inlet 11. The gas conveying mechanism 40 passes through the insulation layer 30. The sidewall of the second conveying section 44 forms a gas inflow channel 441 and a gas outflow channel 445, but the gas inflow channel 441 and the gas outflow channel 445 remain independent. A ring of porous gas channels is formed on the lower sidewall of the second conveying section 44. The porous gas channels are constructed as a first gas outlet 42 and a second gas inlet 446, which can realize the effect of conveying process gas to the gas flow gap 70 and conveying excess gas from the gas flow gap 70 to the gas outflow channel 445. The gas outflow channel 445 is connected to the gas output mechanism 50. The outlet of the gas output mechanism 50 is lower than the bottom of the insulation layer 30 and is close to the position of the gas outlet 12 of the furnace cavity, which is conducive to the gas being discharged from the gas outlet 12 more efficiently. The crystal growth mechanism 20 is located inside the shielding structure 60. The shielding structure 60 is provided above the cover plate 21 of the crystal growth mechanism 20, which helps to reduce the probability of process gas overflowing from the top of the cover plate 21 and diffusing into the insulation layer 30 area.

[0097] When using the crystal growth apparatus 1 of this application embodiment to produce semi-insulating silicon carbide, the crystal growth apparatus 1 of this application embodiment can reduce the corrosion of the insulation layer 30 by the process gas. The assembled crystal growth mechanism 20 and insulation layer 30 are placed in the crystal growth apparatus 1. In the initial stage of crystal growth, a constant power is applied to raise the initial temperature to approximately 2250°C, while hydrogen gas is introduced at 30 sccm. The crystal growth time is 120 hours, and the temperature decay of the crystal growth apparatus 1 under constant power is observed. During the crystal growth process, the temperature is recorded every 6 hours, and the temperature decay is shown in Table 2. During the 120-hour crystal growth time, the temperature decayed from 2250°C to 2245.8°C, a decrease of 4.2°C. The data recorded in Table 2 are plotted as a line graph for analysis, as shown below. Figure 6 As shown in curve 2, and compared with the data in Table 1, the temperature decay is relatively slow throughout the entire crystal growth time. The process gas is separated from the insulation layer 30, which helps to reduce the probability of the process gas corroding the insulation layer 30 and improves the stability of the insulation performance of the insulation layer 30.

[0098] Table 2: Temperature decay of the crystal growth apparatus under constant power in the embodiments of this application

[0099] Time / h 0 6 12 18 24 30 36 42 48 54 60 66 72 78 84 90 96 102 108 114 120 Temperature / °C 2250 2249.8 2249.5 2249.3 2249 2248.6 2248.1 2247.7 2247.2 2246.8 2246.5 2246.3 2246.2 2246.1 2245.9 2245.9 2245.9 2245.8 2245.8 2245.7 2245.8

[0100] Other configurations and operations of the crystal growth apparatus 1 according to embodiments of the present invention are known to those skilled in the art and will not be described in detail here.

[0101] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0102] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the claims and their equivalents.

Claims

1. A crystal growth apparatus, characterized in that, include: Furnace body (10), wherein the furnace body (10) has an air inlet (11); The crystal growth mechanism (20) and the insulation layer (30) are both located inside the furnace body (10). The insulation layer (30) defines an installation space (31), and the crystal growth mechanism (20) is located inside the installation space (31). A gas conveying mechanism (40) is provided inside the furnace body (10). The gas conveying mechanism (40) has a first gas inlet (41) and a first gas outlet (42) that are connected. The first gas inlet (41) is connected to the air inlet (11), and the first gas outlet (42) is connected to the installation space (31) so that gas flows into the installation space (31) through the gas conveying mechanism (40).

2. The crystal growth apparatus according to claim 1, characterized in that, The gas delivery mechanism (40) passes through the insulation layer (30) so that the first gas inlet (41) is located outside the insulation layer (30) and the first gas outlet (42) is located inside the installation space (31).

3. The crystal growth apparatus according to claim 2, characterized in that, The gas delivery mechanism (40) includes a first delivery section (43) and a second delivery section (44), the first delivery section (43) and the second delivery section (44) being connected to connect the first gas inlet (41) and the first gas outlet (42), the first delivery section (43) being located outside the insulation layer (30) and having the first gas inlet (41), and the second delivery section (44) being inserted through the insulation layer (30) and having the first gas outlet (42).

4. The crystal growth apparatus according to claim 3, characterized in that, The first conveying unit (43) includes a first body (431) and a second body (432) connected together. The first body (431) defines an air inlet groove (4311) that opens to the air inlet (11). The air inlet groove (4311) is the first gas inlet (41). The second body (432) connects the first gas inlet (41) and the second conveying unit (44).

5. The crystal growth apparatus according to claim 3, characterized in that, The second conveying section (44) has a gas inflow channel (441) that connects the first conveying section (43) and the first gas outlet (42).

6. The crystal growth apparatus according to claim 5, characterized in that, The second conveying part (44) includes: a first connecting part (442), a through part (443), and a second connecting part (444). The through part (443) is connected between the first connecting part (442) and the second connecting part (444). The through part (443) passes through the insulation layer (30). The first connecting part (442) is located outside the insulation layer (30) and is connected to the first conveying part (43) so that the gas inflow channel (441) communicates with the first conveying part (43). The second connecting part (444) is located inside the insulation layer (30) and has the first gas outlet (42) formed therein.

7. The crystal growth apparatus according to claim 6, characterized in that, The gas inflow channel (441) includes a first channel, a second channel and a third channel. The first connecting portion (442) forms the first channel, the through portion (443) forms the second channel, and the second connecting portion (444) forms the third channel. The second channel connects the first channel and the third channel.

8. The crystal growth apparatus according to claim 3, characterized in that, The crystal growth apparatus (1) further includes a gas output mechanism (50), the furnace body (10) has a gas outlet (12), the gas output mechanism (50) is located inside the furnace body (10) and outside the insulation layer (30), and the second conveying part (44) connects the gas output mechanism (50) and the installation space (31) so that the gas in the installation space (31) flows to the gas outlet (12) along the second conveying part (44) and the gas output mechanism (50).

9. The crystal growth apparatus according to claim 8, characterized in that, The second conveying part (44) has a gas outflow channel (445) that connects the gas output mechanism (50) and the installation space (31).

10. The crystal growth apparatus according to claim 9, characterized in that, The second conveying unit (44) has a connected second gas inlet (446) and a second gas outlet (447), the second gas inlet (446) being located within the installation space (31), and the second gas outlet (447) being connected to the gas output mechanism (50).

11. The crystal growth apparatus according to any one of claims 3-10, characterized in that, The second transport section (44) has a temperature measuring space (448) to measure the temperature of the side of the crystal growth mechanism (20) facing the second transport section (44).

12. The crystal growth apparatus according to any one of claims 1-10, characterized in that, The crystal growth apparatus (1) further includes a shielding structure (60), which is disposed within the installation space (31), and at least a portion of the inner wall of the installation space (31) is provided with the shielding structure (60).

13. The crystal growth apparatus according to any one of claims 1-10, characterized in that, The insulation layer (30) has a first wall portion (32) and the crystal growth mechanism (20) are spaced apart to form a gas flow gap (70) between the first wall portion (32) and the crystal growth mechanism (20), and the first gas outlet (42) communicates with the gas flow gap (70).

14. The crystal growth apparatus according to any one of claims 1-10, characterized in that, The crystal growth mechanism (20) has a cover plate (21) on which an air inlet (211) is formed, the air inlet (211) connecting the interior of the crystal growth mechanism (20) with the mounting space (31).

15. The crystal growth apparatus according to claim 14, characterized in that, The crystal growth apparatus (1) further includes a support ring (80), which is located on the side of the cover plate (21) facing the insulation layer (30) and is used to cover the air inlet (211).

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