Resistance measurement correction method and system

Abstract

The application provides a resistance measurement correction method and system, comprising: obtaining geometric characteristic values of two current probe tip parts of a four-probe device; calculating a current probe correction factor based on the geometric characteristic values of the two current probe tip parts; measuring a sample resistance by using the four-probe device to obtain a resistance measurement value p0; and correcting the resistance measurement value p0 by using the current probe correction factor to obtain a corrected resistance value p. By using the resistance measurement correction method and system provided by the application, even if the probe tip is worn, the resistance measurement result can be corrected in time, so that the accuracy of the measurement result of the four-probe device can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of four-probe testing, in particular to a four-probe resistance measurement method and system. BACKGROUND

[0002] The four-probe device is a multi-purpose comprehensive measuring device using the four-probe measurement principle, and is specially used for testing the resistivity and sheet resistance (thin layer resistance) of semiconductor materials. Figure 1 As shown in FIG. 1, the current probe 1, the voltage probe 2, the voltage probe 3 and the current probe 4 of the four-probe device are arranged in a fixed position in sequence, the current is injected into the silicon wafer, and the voltage difference is detected, and the resistivity is calculated according to the following formula:

[0003]

[0004] Wherein, V is the potential difference between the probe 2 and the probe 3, I is the current value flowing through the probe 1, and S is the probe spacing.

[0005] Since the Mohs hardness of the silicon wafer is high (6.5), the probe penetration depth of the four-probe device during measurement is <0.5um, generally about 0.2um, so it can be considered that the contact between the 4PP and the silicon wafer during testing is “point contact”; with the increase of the number of times of using the probe, the tip of the probe will be worn, and the actual contact between the probe and the silicon wafer will gradually change from “point contact” to “surface contact”, resulting in the deviation of the actual current distribution, the probe spacing and the like during measurement, and if it is not corrected, the measurement error will be increased, and the actual measurement error can reach 16.9%.

[0006] The prior art is to repeatedly test the standard sample within a certain period of time, and artificially give a correction coefficient, but the correction is not timely. SUMMARY

[0007] The purpose of the present application is to provide a resistance measurement method and system to solve the problem of measurement error of the four-probe device after the tip of the probe is worn.

[0008] To solve the above technical problems, the present application provides a resistance measurement correction method for correcting the resistance measurement result of a four-probe device, the four-probe device comprising two current probes and two voltage probes, the correction method comprising:

[0009] Obtaining the geometric characteristic value of the tip of the two current probes;

[0010] Based on the geometric characteristic value of the tip of the two current probes, the current probe correction factor K is calculated using the following formula: s :

[0011]

[0012] wherein δ1, δ4 represent the effective offset of the two current probes, respectively, r eq1 , r eq4 represent the effective radius of the two current probes, respectively, and s represents the distance between the two adjacent probes; z is an integer greater than or equal to 3, and a, b are the coefficients of the two current probes, respectively;

[0013] measuring the resistance of the sample using the four-probe device to obtain a resistance measurement value ρ0; and

[0014] correcting the resistance measurement value ρ0 using the current probe correction factor K s to obtain a corrected resistance value ρ.

[0015] Optionally, in the resistance measurement correction method, the effective offset of the current probe can be obtained by the following method:

[0016] calculating the effective radius, the shape factor and the eccentricity of the two current probes based on the geometric characteristic values of the two current probes, respectively; and

[0017] calculating the effective offset of each current probe based on the eccentricity and the shape factor of the current probe.

[0018] Optionally, in the resistance measurement correction method, δ1, δ4 are obtained by a monotonically increasing function related to the shape factor and the eccentricity of the two current probes, respectively.

[0019] Optionally, in the resistance measurement correction method, the correction method further comprises:

[0020] obtaining the geometric characteristic values of the tip parts of the two voltage probes;

[0021] calculating the voltage probe correction factor K v based on the geometric characteristic values of the tip parts of the two voltage probes; and

[0022] correcting the resistance measurement value ρ0 using the voltage probe correction factor K v at the same time as correcting the resistance measurement value ρ0 using the current probe correction factor K s .

[0023] Optionally, in the resistance measurement correction method, the voltage probe correction factor K v is calculated based on the geometric characteristic values of the two voltage probes, and comprises:

[0024] calculating the effective radius, the shape factor and the eccentricity of the two voltage probes based on the geometric characteristic values of the two voltage probes, respectively.

[0025] calculating a position offset of each voltage probe based on the shape factor and the eccentricity of the voltage probe; and

[0026] calculating the voltage probe correction factor K by integrating the position offset and the equivalent radius of the two voltage probes. v .

[0027] Optionally, in the resistance measurement correction method, the voltage probe correction factor K is calculated by a preset second function v , wherein the second function satisfies:

[0028]

[0029] wherein β2 and β3 represent the position offsets of the two voltage probes, respectively, and are obtained by a monotone increasing function related to the shape factor and the eccentricity of the two voltage probes, respectively, r eq2 and r eq3 represent the equivalent radii of the two voltage probes, respectively, and s represents the distance between the two adjacent probes.

[0030] Optionally, in the resistance measurement correction method, the geometric characteristic values include area A, perimeter P, minimum moment of inertia I min and maximum moment of inertia I max .

[0031] The function for calculating the equivalent radius r eq satisfies:

[0032] The function for calculating the shape factor k satisfies:

[0033] The function for calculating the eccentricity e satisfies:

[0034] Optionally, in the resistance measurement correction method, the correction of the resistance measurement value ρ0 by K s and K v includes:

[0035] substituting the resistance measurement value ρ0 into the formula: ρ=K s × K v ×ρ0 to calculate the corrected resistance value ρ.

[0036] The application further provides a resistance measurement correction system for correcting the resistance measurement result of a four-probe device, wherein the four-probe device includes two current probes and two voltage probes, and the correction system includes:

[0037] a geometry feature recognition module configured to obtain geometry feature values of two tip positions of the current probes;

[0038] a correction factor generation module configured to calculate a current probe correction factor K s based on the geometry feature values of the two current probes; and

[0039] a resistance correction module configured to correct the resistance measurement value p0 by using the current probe correction factor K s to obtain a corrected resistance value p.

[0040] wherein the correction factor generation module calculates the current probe correction factor K

[0041]

[0042] In the formula, d1 and d4 respectively represent equivalent offset values of the two current probes, r eq1 and r eq4 respectively represent equivalent radii of the two current probes, s represents a spacing between the two adjacent probes, and z is an integer greater than or equal to 3. and a1 and a4 respectively represent coefficients of the two current probes.

[0043] Optionally, in the resistance measurement correction system, the geometry feature recognition module is further configured to obtain geometry feature values of two tip positions of the voltage probes.

[0044] The correction factor generation module is further configured to calculate a voltage probe correction factor K v based on the geometry feature values of the two voltage probes.

[0045] The resistance correction module is further configured to correct the resistance measurement value p0 by using the current probe correction factor K s at the same time, the voltage probe correction factor K v is also used to correct the resistance measurement value p0.

[0046] In summary, the resistance measurement correction method and system provided by the present application include: obtaining geometry feature values of two tip positions of current probes of a four-probe device; calculating a current probe correction factor K s based on the geometry feature values of the two tip positions of the current probes; measuring a sample resistance by using the four-probe device to obtain a resistance measurement value p0; and correcting the resistance measurement value p0 by using the current probe correction factor K sThe resistance measurement value ρ0 is corrected to obtain a corrected resistance value ρ. By using the resistance measurement correction method and system provided by the present application, even if the probe tip is worn, the resistance measurement result can be corrected in time, thereby improving the accuracy of the measurement result of the four-probe device. BRIEF DESCRIPTION OF DRAWINGS

[0047] Figure 1 A schematic diagram of the arrangement of four probes of a four-probe device.

[0048] Figure 2 A flowchart of the resistance measurement correction method provided by Embodiment One of the present application.

[0049] Figure 3 A flowchart of the resistance measurement correction method provided by Embodiment Two of the present application. DETAILED DESCRIPTION

[0050] In order to make the objects, advantages and features of the present application clearer, the resistance measurement correction method and system provided by the present application will be described in detail below in combination with the drawings and specific embodiments. It should be noted that the drawings are very simplified and not drawn to scale, and are only used to facilitate and clarify the purpose of illustrating the embodiments of the present application. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, different scales are sometimes used in the drawings to show different focuses. It should also be understood that, unless specifically described or indicated, the terms "first", "second", "third" and the like in the description are only used to distinguish the components, elements, steps and the like in the description, and are not used to represent the logical relationship or sequence relationship between the components, elements, steps and the like.

[0051]

Embodiment One

[0052] The present embodiment provides a resistance measurement correction method, which is used to correct the resistance measurement result of a four-probe device. As described above, the four-probe device includes two current probes and two voltage probes, and the current probe 1, the voltage probe 2, the voltage probe 3 and the current probe 4 are arranged in sequence.

[0053] As shown in FIG. 1, the correction method provided by the present embodiment includes the following steps: Figure 2

[0054] S11, obtaining the geometric characteristic values of the tip parts of the two current probes;

[0055] S12, calculating a current probe correction factor K based on the geometric characteristic values of the tip parts of the two current probes s ;

[0056] S13, measuring the resistance of a sample by using the four-probe device to obtain a resistance measurement value ρ0; and,​

[0057] S14, correcting the resistance measurement value p0 using the current probe correction factor K s The resistance measurement value p0 is corrected to obtain a corrected resistance value p.

[0058] By using the resistance measurement correction method and system provided by the application, even if the probe tip is worn, the resistance measurement result can be corrected in time, thereby improving the accuracy of the measurement result of the four-probe device.

[0059] In step S11, the geometric characteristic value of the probe tip part is the geometric characteristic value of the contact surface when the probe contacts the target object. Specifically, the geometric characteristic value can be obtained by acquiring a topographic image of the probe tip part, and then identifying the geometric characteristic value according to the topographic image.

[0060] The geometric characteristic value specifically can include: area A, perimeter P, minimum moment of inertia I min , and maximum moment of inertia I max .

[0061] In step S12, the current probe correction factor K s can be calculated by a preset first function, and the first function satisfies the following formula:

[0062]

[0063] In the formula, δ1 and δ4 respectively represent the equivalent offset of the two current probes, r eq1 and r eq4 respectively represent the equivalent radius of the two current probes, s represents the spacing between the two adjacent probes; z is an integer greater than or equal to 3, and is the coefficient of the two current probes.

[0064] Optionally, the equivalent offset of the current probe can be obtained by the following way:

[0065] Based on the geometric characteristic values of the two current probes, the equivalent radius, shape factor and eccentricity of the two current probes are calculated respectively; based on the eccentricity and the shape factor of each current probe, the equivalent offset of each current probe is calculated.

[0066] Optionally, δ1 and δ4 are obtained by a monotonic increasing function related to the shape factor and the eccentricity of the two current probes respectively, that is, after δ1 and δ4 are calculated by a monotonic increasing function related to the shape factor and the eccentricity of the current probe respectively, the current probe correction factor K s is calculated according to the above first function.

[0067] Optionally, the monotonic increasing function related to the shape factor and the eccentricity of the current probe satisfies:

[0068] δ∝b(k-1)+ce, where b and c are constants.

[0069] Based on the characteristics of the equivalent current offset of the two current probes, δ1 and δ4 can be obtained using the same monotonically increasing function. That is, when calculating δ1 and δ4, b and c take the same value.

[0070] The equivalent radius of the current probe is determined by a function related to A, reflecting the area normalization characteristics of the contact surface. The shape factor is determined by a function related to P and A, characterizing the irregularity of the contact surface edge. The eccentricity is determined by a function related to I. min and I max The relevant function is determined to characterize the degree to which the contact surface deviates from a circle.

[0071] in,

[0072] Calculate the equivalent radius r eq The function satisfies:

[0073] The function that calculates the shape factor k satisfies:

[0074] The function that calculates the eccentricity e satisfies:

[0075] In step S13, when measuring the sample resistance using a four-probe device, the formula for calculating the resistance measurement value is as follows:

[0076] .

[0077] Where V is the potential difference between probe 2 and probe 3; I is the current flowing through probe 1; and S is the distance between two adjacent probes.

[0078] In step S14, the measured resistance value ρ0 can be substituted into the formula: ρ=K s The corrected resistance value ρ is obtained by calculating ×ρ0.

[0079] As an example, the formula for calculating the equivalent radius is:

[0080]

[0081] As an example, the formula for calculating the shape factor is:

[0082]

[0083] As an example, the formula for calculating eccentricity is:

[0084]

[0085] As an example, the formula for calculating the equivalent offset of the current probe is:

[0086]

[0087] wherein a, b, c are constants, 0

[0088] As an example, the formula for calculating the correction factor K of the current probe is: s

[0089]

[0090] That is, the value of z is 4, when the value of z is 4, it can meet the general requirements of engineering application, in the calculation formula, the coefficient (where i is the number of high-order correction terms, n is the number of current probes) also depends on k and e of the current probe, and the calculation formula can be as follows:

[0091]

[0092] wherein the coefficient of probe 1 , the coefficient of probe 4 is the coefficient of circular contact surface a i , r i is the coefficient, , The specific values of a, r, k and e can be obtained by obtaining the geometric shape of the contact surface, and the shape is controlled by k and e of the current probe; the range of k and e is defined, the potential of each point is calculated by Laplace for each group (k, e), the potential distortion coefficient under a specific shape is extracted from the potential distribution, a data set containing k, e and the potential distortion coefficient is obtained, and the least square method is used for linear regression to obtain the corresponding value, and the calculation results are shown in Table 1.

[0093] Table 1

[0094]

[0095] Based on the formula of the above example, the resistance measurement correction method and system provided in the embodiment are exemplified as follows.

[0096] The statistical results of the equivalent radius r eq , the shape factor k and the eccentricity e obtained based on the geometric characteristic values of probe 1 and probe 4 are shown in Table 2.

[0097] Table 2 ​

[0098]

[0099] According to Table 2 and in combination with the above formula, δ1, δ4 and K are calculated respectively s .

[0100] The statistical results of V, I and S are shown in Table 3, V is the potential difference between probe 2 and probe 3, I is the current value flowing through probe 1, and S is the distance between the probes:

[0101] Table 3

[0102]

[0103] Based on Table 3 and in combination with the formula , the value of ρ is calculated.

[0104] The sample resistance is 0.0043 ohm.cm, the measured resistance is 0.00357 ohm.cm, and the resistance after correction by the method provided in the embodiment is 0.004246 ohm.cm. The calculation process verifies the influence of the contact area of the probe and the target object on the final resistance, the measured resistance is lower than the actual resistance, and the measurement error is reduced from 16.9% to 1.3%.

[0105] In addition, the embodiment of the present application also provides a resistance measurement correction system for correcting the resistance measurement result of a four-probe device, wherein the four-probe device comprises two current probes and two voltage probes, and the correction system comprises:

[0106] a geometric feature identification module, configured to acquire geometric feature values of the tip parts of the two current probes;

[0107] a correction factor generation module, configured to calculate a current probe correction factor K s based on the geometric feature values of the two current probes; and

[0108] a resistance correction module, configured to correct a resistance measurement value ρ0 by using the current probe correction factor K s to obtain a corrected resistance value ρ.

[0109] It can be understood that the geometric feature identification module, the correction factor generation module and the resistance correction module of the resistance measurement correction system provided in the embodiment are respectively used to perform the steps of the resistance measurement correction method provided in the embodiment, and therefore, the specific function descriptions of the geometric feature identification module, the correction factor generation module and the resistance correction module are referred to the descriptions of the resistance measurement correction method, which will not be described herein.

[0110] Specifically, the geometric feature recognition module may include:

[0111] A CCD imaging module is used to acquire topographic images of the tip portion of the needle containing the two current probes;

[0112] An image analysis module is used to identify the geometric feature values ​​of the two current probes based on the topographic image.

[0113]

Example 2

[0114] Unlike Embodiment 1, the correction method provided in this embodiment further includes: obtaining the geometric feature values ​​of the tips of the two voltage probes; and calculating the voltage probe correction factor K based on the geometric feature values ​​of the tips of the two voltage probes. v ; and, when using the current probe correction factor K s While correcting the resistance measurement value ρ0, the voltage probe correction factor K is also used. v The measured resistance value ρ0 is corrected.

[0115] That is, such as Figure 3 As shown, the correction method provided in this embodiment includes the following steps:

[0116] S21, Obtain the geometric feature values ​​of the tips of the two current probes and the two voltage probes;

[0117] S22, Based on the geometric feature values ​​of the two current probe tips, calculate the current probe correction factor K. s Furthermore, based on the geometric eigenvalues ​​of the two voltage probes, the voltage probe correction factor K is calculated. v ;

[0118] S23, the sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and...

[0119] S24, utilizing the current probe correction factor K s and the voltage probe correction factor K v The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

[0120] Research has shown that wear on the tip of a current probe has a much greater impact on resistance measurement results than wear on the tip of a voltage probe. Therefore, a correction factor K for the current probe is used. s Correcting the resistance measurement value ρ0 can significantly improve the accuracy of the measurement results. However, using current probe correction factors and voltage probe correction factors K... v At the same time, correcting the resistance measurement value ρ0 can further improve the accuracy of the measurement results.

[0121] In step S21, the equivalent radius, shape factor and eccentricity of the voltage probe are determined by the same function as the current probe.

[0122] In step S22, the voltage probe correction factor K is calculated based on the geometric characteristic values of the two voltage probes. v Specifically, the method can include:

[0123] The equivalent radius, shape factor and eccentricity of the two voltage probes are calculated based on the geometric characteristic values of the two voltage probes, respectively; the positional offset of each voltage probe is calculated based on the shape factor and the eccentricity of the voltage probe; and the voltage probe correction factor K is calculated by integrating the positional offset and the equivalent radius of the two voltage probes. v .

[0124] The voltage probe correction factor K can be calculated by a preset second function. v The second function satisfies:

[0125]

[0126] wherein β2 and β3 represent the positional offset of the two voltage probes, respectively, and are obtained by a monotonic increasing function related to the shape factor and the eccentricity of the two voltage probes, respectively, r eq2 and r eq3 represent the equivalent radius of the two voltage probes, respectively, and s represents the distance between the adjacent two probes.

[0127] That is, after β2 and β3 are calculated by the monotonic increasing function related to the shape factor and the eccentricity of the voltage probe, respectively, the voltage probe correction factor K is calculated according to the second function. v .

[0128] Optionally, the monotonic increasing function related to the shape factor and the eccentricity of the voltage probe satisfies:

[0129] β∝m(k-1)+ne, wherein m and n are constants.

[0130] Based on the characteristics of the positional offset of the two voltage probes, β2 and β3 are obtained by different monotonic increasing functions, that is, m and n take different values when calculating β2 and β3.

[0131] In step S24, the resistance measurement value ρ0 can be substituted into the formula: ρ=K s × K v ×ρ0 to calculate the corrected resistance value ρ.

[0132] As an example, the voltage probe correction factor K is calculated v The formula is:

[0133]

[0134] Where d, p, f, g, h, j are constants, 0 < d < 1, 0 < p < 0.5, 0 < f < 0.1, 0 < g < 0.5, 0 < h < 0.5, 0 < j < 0.1, the specific values of d, p, f, g, h, j can be obtained by the following way:

[0135] The contact surface model of different k, e is established, the size ratio is systematically changed for the same group of shape parameters (k, e), the accurate potential distribution is calculated through Laplace equation, the real Kv is solved; the curve of Kv changing with the size ratio is obtained by fixing a group of (k, e); the values of β2 and β3 are obtained when (k, v) is fixed, and a group of (k, e) (β2, β3) is obtained; the data set of (k, e) (β2, β3) is obtained by using this way subsequently; the least square method is used to fit the relationship between the distributions of β2 and β3 and k and e, and the parameters of d, p, f, g, h and j are obtained.

[0136] Similarly, the embodiment also provides a resistance measurement correction system, compared with the first embodiment, the geometric feature recognition module is also used to obtain the geometric feature values of the two voltage probe tip parts; the correction factor generation module is also used to calculate the voltage probe correction factor K based on the geometric feature values of the two voltage probes v ; the resistance correction module is also used to correct the resistance measurement value ρ0 by using the current probe correction factor K s , and also correct the resistance measurement value ρ0 by using the voltage probe correction factor K v .

[0137] It can be understood that the resistance measurement correction system provided by the embodiment is used to execute the steps of the resistance measurement correction method, and therefore, the specific function of the geometric feature recognition module, the correction factor generation module and the resistance correction module is described in the description of the resistance measurement correction method, which will not be described here.

[0138] In addition, in the embodiment, the geometric feature recognition module also specifically includes a CCD imaging module and an image analysis module. Different from the first embodiment, in the embodiment, the CCD imaging module is configured to acquire a topographic image of the tip of the two current probes and the two voltage probes; and the image analysis module is configured to recognize the geometric feature values of the two current probes and the two voltage probes according to the topographic image.

[0139] Based on the above formula, the resistance measurement correction method and system provided in the embodiment are exemplified as follows.

[0140] The statistical results of the equivalent radii, shape factors and eccentricities e obtained based on the geometric feature values of the probe 2 and the probe 3 are shown in Table 4 as follows:

[0141] Table 4

[0142]

[0143] According to Table 4 and the above formula, β2, β3 and K are calculated respectively as follows: v .

[0144] The statistical results of V, I and S are shown in Table 3 as follows, V is the potential difference between the probe 2 and the probe 3, I is the current value flowing through the probe 1, and S is the distance between the probes.

[0145] Based on Table 3 and Table 4 and the formula , the value of ρ is calculated.

[0146] The sample resistance is 0.0043 ohm.cm, the calculated measurement resistance is 0.00357 ohm.cm, and the resistance after correction by the method provided in the embodiment is 0.004249 ohm.cm. The calculation process verifies the influence of the contact area of the probe and the target object on the final resistance, the measurement resistance is lower than the actual resistance, and the measurement error is reduced from 16.9% to 1.2%.

[0147] In summary, the resistance measurement correction method and system provided in the embodiment includes: acquiring geometric feature values of the tip of two current probes of a four-probe device; calculating a current probe correction factor K s based on the geometric feature values of the tip of the two current probes; measuring the sample resistance by using the four-probe device to obtain a resistance measurement value ρ0; and correcting the resistance measurement value ρ0 by using the current probe correction factor K s to obtain a corrected resistance value ρ. By using the resistance measurement correction method and system provided in the embodiment, even if the probe tip is worn, the resistance measurement result can be corrected in time, so that the accuracy of the measurement result of the four-probe device can be improved.

[0148] It should also be appreciated that, although the present application has been disclosed in the context of preferred embodiments, the embodiments disclosed are not intended to limit the present application. Any modifications of the above-described embodiments made by one skilled in the art to adapt the present application for use in other aspects are considered within the scope of the present application.

Claims

1. A method of resistance measurement correction for correcting a resistance measurement result of a four-probe device including two current probes and two voltage probes, characterized by, The correction method comprises: obtaining geometric characteristic values of two current probe tip positions; Based on the geometric characteristic values of the two current probe tip parts, a current probe correction factor K is calculated using the following formula s : In the formula, δ1 and δ4 represent the equivalent offset of the two current probes, respectively eq1 , r eq4 represent the equivalent radius of the two current probes, respectively, and s represents the spacing between the two adjacent probes; z is an integer greater than or equal to 3, are the coefficients of the two current probes, respectively. measuring the sample resistance by using the four-probe device to obtain a resistance measurement value p0; and Using the current probe correction factor K s The resistance measurement p0 is corrected to obtain a corrected resistance value p.

2. The resistance measurement correction method of claim 1, wherein, The equivalent offset of the current probe can be obtained by: based on the geometric characteristic values of the two current probes, calculating the equivalent radius, shape factor and eccentricity of the two current probes respectively; and based on the eccentricity and the shape factor of each current probe, calculating the respective equivalent offset.

3. The resistance measurement correction method of claim 2, wherein, deltal, delta4 are obtained by a monotone increasing function related to the shape factor and the eccentricity of the two current probes respectively.

4. The resistance measurement correction method of claim 1, wherein, The correction method further comprises: obtaining geometric characteristic values of two voltage probe tip positions; Based on the geometric characteristic values of the two voltage probe tip parts, a voltage probe correction factor K is calculated v ; and, The current probe correction factor K is used to correct the resistance measurement ρ0 s The voltage probe correction factor K is used to correct the resistance measurement ρ0 v The resistance measurement ρ0 is corrected.

5. The resistance measurement correction method of claim 4, wherein, Based on the geometric characteristic values of the two voltage probes, a voltage probe correction factor K is calculated v comprising: based on the geometric characteristic values of the two voltage probes, calculating the equivalent radius, shape factor and eccentricity of the two voltage probes respectively; based on the shape factor and the eccentricity of each voltage probe, calculating the respective position offset; and The voltage probe correction factor K is calculated by combining the position offset and the equivalent radius of the two voltage probes. v .

6. The resistance measurement correction method of claim 5, wherein, The voltage probe correction factor K is calculated by a preset second function v , which satisfies: wherein β2, β3 represent the position offsets of the two voltage probes, respectively, and are obtained through a monotonic increasing function related to the shape factor and the eccentricity of the two voltage probes, respectively, r eq2 , r eq3 represent the equivalent radii of the two voltage probes, respectively, and s represents the spacing between the two adjacent probes.

7. The resistance measurement correction method of claim 2 or 5, wherein, The geometric characteristic values include area A, perimeter P, minimum moment of inertia I min and maximum moment of inertia I max ; The function of the equivalent radius r eq satisfies: the function of the shape factor k satisfies: the function of the eccentricity e satisfies: 。 8. The resistance measurement correction method of claim 4, wherein, With K s and K v correcting the resistance measurement ρ0 comprises: The resistance measurement value p0 is inserted into the formula: p = K s x K v x p0 to calculate the corrected resistance value p.

9. A resistance measurement correction system for correcting a resistance measurement of a four-probe device, the four-probe device comprising two current probes and two voltage probes, characterized in that, The correction system comprises: a geometric characteristic identification module for obtaining geometric characteristic values of two current probe tip positions; a correction factor generating module, configured to calculate a current probe correction factor K based on geometric characteristic values of the two current probes s ; and, a resistance correction module for correcting the resistance value p0 using the current probe correction factor K s the resistance value p0 is corrected to obtain a corrected resistance value p; wherein the correction factor generation module calculates the current probe correction factor by using the following formula: In the formula, δ1 and δ4 represent the equivalent offset of the two current probes, respectively eq1 , r eq4 represent the equivalent radius of the two current probes, respectively, and s represents the spacing between the two adjacent probes; z is an integer greater than or equal to 3, and a and b are coefficients of the two current probes, respectively.

10. The resistance measurement correction system of claim 9, wherein, The geometric characteristic identification module is further used for obtaining geometric characteristic values of two voltage probe tip positions; The correction factor generation module is further configured to calculate a voltage probe correction factor K based on a geometric characteristic value of the two voltage probes v ; said resistance correction module is also configured to correct the resistance measurement value p0 using the voltage probe correction factor K s said resistance correction module is also configured to correct the resistance measurement value p0 using the voltage probe correction factor K v said resistance correction module is also configured to correct the resistance measurement value p0 using the voltage probe correction factor K

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