Integrated bias power supply circuit

Abstract

The invention discloses an integrated bias power supply circuit, which is characterized in that a 220V voltage source is connected with a slow start and low-voltage rectification filtering unit and an AC / DC module unit, the slow start and low-voltage rectification filtering unit is connected with a half-bridge inversion unit, the half-bridge inversion unit is connected with an LC resonance and high-frequency boost unit, and the LC resonance and high-frequency boost unit is connected with a power supply. The LC resonance and high-frequency boosting unit is connected with the isolation transmission unit; the isolation transmission unit is connected with the protection unit; the protection unit is connected with the beam current regulation and control assembly unit, and the beam current regulation and control assembly unit is connected with the regulation and control assembly control unit and the beam current and voltage isolation sampling unit and performs bias voltage output to the outside; the beam current and voltage isolation sampling unit is connected with the regulation and control assembly control unit and the general control unit, the general control unit is connected with the setting and display unit, the isolation driving unit and the regulation and control assembly control unit, and the isolation driving unit is connected with the half-bridge inversion unit. The problem that the response period and the adjustment time of a bias power supply are relatively long is effectively solved, and real-time rapid follow-up and fine regulation and control of the working beam current are realized.

Description

Technical Field

[0001] This invention relates to the field of bias power supply technology, and more specifically to an integrated bias power supply circuit. Background Technology

[0002] The power supply system of a high-voltage electron beam welder consists of three power supplies: a filament power supply, a high-voltage power supply, and a bias power supply. The filament power supply outputs a current of several to tens of amperes to heat the filament and generate electrons. The high-voltage power supply outputs a negative high voltage to accelerate the electron beam. The bias power supply provides a negative bias voltage to the grid to suppress electron output and regulate the beam current. The welding principle of an electron beam welder is as follows: the filament power supply outputs current to heat the filament, causing it to emit electrons. A large number of these emitted electrons are accelerated by the high-voltage electric field generated by the high-voltage power supply and bombard the workpiece. A large amount of the electron beam's kinetic energy is converted into heat energy, melting the workpiece at the impact point to form a molten pool, thus achieving welding. During the welding process, a negative bias voltage (bias power supply) is also applied between the electron gun cathode filament and the bias cup (grid). The magnitude of the electron beam current is controlled and adjusted by adjusting the magnitude of the negative bias voltage.

[0003] Currently, the voltage regulation method for the bias power supply output of high-voltage electron beam welding machines at home and abroad is as follows: the working current in the high-voltage power supply circuit is collected, and the collected current signal is converted from current to voltage, sampled by A / D, isolated and transmitted, and converted by D / A to the bias power supply. The bias power supply adjusts its output voltage according to the magnitude of the sampled current, and then changes the current in the high-voltage circuit through the output voltage of the bias power supply. Since the bias power supply is an inverter power supply, the response and adjustment cycle is relatively long, and precise step control is difficult. As a result, the beam current stability and beam current reproducibility are poor (beam current stability is about tens of μA, and beam current reproducibility is about ±0.2%), which does not meet the requirements of precision welding for beam current stability and beam current fluctuation. Summary of the Invention

[0004] The integrated bias power supply circuit, device, and storage medium proposed in this invention can at least solve one of the technical problems in the background art.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: An integrated bias power supply circuit includes: A 220V voltage source is connected to a soft-start and low-voltage rectification and filtering unit and an AC / DC module unit. The soft-start and low-voltage rectification and filtering unit is connected to a half-bridge inverter unit. The half-bridge inverter unit is connected to an LC resonant and high-frequency boost unit. The LC resonant and high-frequency boost unit is connected to an isolation transmission unit. The isolation transmission unit is connected to a protection unit. The protection unit is connected to a beam current control component unit. The beam current control component unit is connected to the control component control unit and the beam current and voltage isolation sampling unit, and also provides bias voltage output. The beam current and voltage isolation sampling unit is connected to the control component control unit and the main control unit. The main control unit is connected to a setting and display unit, an isolation drive unit, and the control component control unit. The isolation drive unit is connected to the half-bridge inverter unit. The AD / DC module unit is connected to the DC / AC module unit, the DC / AC module unit is connected to the isolated power supply unit, and the isolated power supply unit is connected to the beam current and voltage isolation sampling unit and the control unit of the regulation component.

[0006] Furthermore, the LC resonant high-frequency inverter unit of the present invention is as follows: Filter capacitor C1 is connected in parallel across resistor R1, and filter capacitor C2 is connected in parallel across resistor R2. One end of resistor R1 is connected to half-bridge IGBT switch Q1, and the other end is connected to resistor R2. The other end of resistor R2 is connected to half-bridge IGBT switch Q2, and the other end of half-bridge IGBT switch Q2 is connected to resonant capacitor C3. The other end of half-bridge IGBT switch Q1 is connected to resonant capacitor C3, and the other end of resonant capacitor C3 is connected to one end of the primary winding of high-frequency isolation transformer T1. The connection point of resistors R1 and R2 is connected to the other end of the primary winding of high-frequency isolation transformer T1.

[0007] Furthermore, the isolation transmission unit of the present invention comprises: six isolation transformers with a transformation ratio of 1:1 connected in series.

[0008] Furthermore, the high-voltage rectifier filter unit of the present invention includes: the negative terminal of high-voltage silicon stack diode D1 is connected to the negative terminal of high-voltage silicon stack diode D2, the positive terminal of high-voltage silicon stack diode D1 is connected to the negative terminal of high-voltage silicon stack diode D3 and the isolation transmission unit, the positive terminal of high-voltage silicon stack diode D3 is connected to the negative terminal of high-voltage silicon stack diode D4 is connected to the positive terminal of high-voltage silicon stack diode D2, one end of the filter capacitor C4 is connected to the negative terminals of high-voltage silicon stack diodes D1 and D2, and the other end of the filter capacitor C4 is connected to the positive terminals of high-voltage silicon stack diodes D3 and D4.

[0009] Furthermore, the protection unit of the present invention includes: Resistor R3 is connected to the negative terminal of diode D5. The positive terminal of diode D5 is connected to resistor R4. The other end of resistor R4 is connected to resistor R3 and varistor RZ1. The other end of varistor RZ1 is connected to varistor RZ2. The other end of varistor RZ2 is connected to the positive terminals of high-voltage silicon stack diodes D3 and D4 and one end of sampling resistor Rs. The other end of sampling resistor Rs is suspended on the -150kV high-voltage power supply output terminal and connected to one end of inductor L1. The other end of inductor L1 is connected to one end of filter capacitor C6 and the high-voltage electron gun bias cup. The common point of inductor L1 and filter capacitor C6 is the negative terminal V- of the integrated bias power supply output, with a voltage of -150kV. The other end of filter capacitor C6 is connected to the common terminal of resistors R3, R4, and R5, which is the positive terminal V+ of the integrated bias power supply output. V+ is connected to one end of resistors R7 and R8 respectively. The other ends of resistors R7 and R8 are connected to the two ends of the high-voltage electron gun cathode filament respectively. Capacitor C5 is connected in parallel across resistor R4.

[0010] Furthermore, the beam control component unit of the present invention includes: The collector of transistor assembly M1 is connected to the negative terminal of diode D6 and one end of resistor R9, respectively. The other end of resistor R9 is connected to the positive output terminal V+ of the bias power supply. The emitter of transistor assembly M1 is connected to the positive terminal of diode D6 and the common terminal of resistors Rs and RZ2, respectively. The base of transistor assembly M1 is connected to the positive output signal terminal of the transistor control board. The emitter of transistor assembly M1 is connected to the ground output signal terminal of the transistor control board. One end of varistor RZ3 is connected to the positive terminal of diode D6, and the other end of varistor RZ3 is connected to the positive output terminal V+ of the bias power supply.

[0011] As can be seen from the above technical solution, the integrated bias power supply of the present invention effectively solves the problems of relatively long response cycle and adjustment time of bias power supply, and further solves the problems of difficulty in precise control. It realizes real-time fast tracking and fine control of working beam current, so that the beam current stability of high voltage electron beam welding machine is better than ±0.005mA and the beam current reproducibility reaches ±0.04%. Both beam current stability and reproducibility have surpassed the international advanced level. Attached Figure Description

[0012] Figure 1 This is a block diagram of the bias power supply principle; Figure 2 This is the schematic diagram of the main circuit of the integrated bias power supply. Figure 3 This is a schematic diagram of the isolated power supply circuit of the present invention; Figure 4 The figure shows the stability test results of the application of this invention to a high-voltage electron beam welding machine. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.

[0014] like Figure 1 As shown, the integrated bias power supply described in this embodiment includes: A 220V voltage source is connected to a soft-start and low-voltage rectification and filtering unit and an AC / DC module unit. The soft-start and low-voltage rectification and filtering unit is connected to a half-bridge inverter unit. The half-bridge inverter unit is connected to an LC resonant and high-frequency boost unit. The LC resonant and high-frequency boost unit is connected to an isolation transmission unit. The isolation transmission unit is connected to a protection unit. The protection unit is connected to a beam current control component unit. The beam current control component unit is connected to the control component control unit and the beam current and voltage isolation sampling unit, and also provides bias voltage output. The beam current and voltage isolation sampling unit is connected to the control component control unit and the main control unit. The main control unit is connected to a setting and display unit, an isolation drive unit, and the control component control unit. The isolation drive unit is connected to the half-bridge inverter unit. The AD / DC module unit is connected to the DC / AC module unit, the DC / AC module unit is connected to the isolated power supply unit, and the isolated power supply unit is connected to the beam current and voltage isolation sampling unit and the control unit of the regulation component.

[0015] like Figure 2 As shown, the LC resonant high-frequency inverter unit includes: filter capacitor C1, filter capacitor C2, voltage equalizing resistor R1, voltage equalizing resistor R2, half-bridge IGBT switch Q1, half-bridge IGBT switch Q2, resonant capacitor C3, and high-frequency isolation transformer T1. Filter capacitor C1 is connected in parallel across resistor R1, and filter capacitor C2 is connected in parallel across resistor R2. One end of resistor R1 is connected to half-bridge IGBT switch Q1, and the other end is connected to resistor R2. The other end of resistor R2 is connected to half-bridge IGBT switch Q2, and the other end of half-bridge IGBT switch Q2 is connected to resonant capacitor C3. The other end of half-bridge IGBT switch Q1 is connected to resonant capacitor C3, and the other end of resonant capacitor C3 is connected to one end of the primary winding of high-frequency isolation transformer T1. The connection point of resistors R1 and R2 is connected to the other end of the primary winding of high-frequency isolation transformer T1.

[0016] The LC resonant high-frequency inverter unit mainly converts +310V DC voltage into 40kHz high-frequency AC voltage.

[0017] The isolation transformer T1 is a high-frequency step-up transformer, which mainly converts 310V AC voltage to 1500V AC power. The isolation transmission unit T2 is composed of 6 isolation transformers with a 1:1 ratio connected in series, mainly to achieve 1:1 signal transmission and 200kV isolation between input and output signals.

[0018] The high-voltage rectifier and filter unit includes: high-voltage silicon diodes D1, D2, D3, and D4, and a filter capacitor C4. The negative terminal of high-voltage silicon diode D1 is connected to the negative terminal of high-voltage silicon diode D2; the positive terminal of high-voltage silicon diode D1 is connected to the negative terminal of high-voltage silicon diode D3 and the isolation transmission unit; the positive terminal of high-voltage silicon diode D3 is connected to the negative terminal of high-voltage silicon diode D4, which in turn is connected to the positive terminal of high-voltage silicon diode D2; one end of the filter capacitor C4 is connected to the negative terminals of high-voltage silicon diodes D1 and D2, and the other end is connected to the positive terminals of high-voltage silicon diodes D3 and D4. This high-voltage rectifier and filter unit converts a 1500V, 40kHz high-frequency AC voltage into a -2100V DC voltage.

[0019] The protection unit includes: resistors R3 and R4, capacitor C5, diode D5, varistor RZ1 and RZ2, and inductor L1. Resistor R3 is connected to the negative terminal of diode D5. The positive terminal of diode D5 is connected to resistor R4. The other end of resistor R4 is connected to resistor R3 and varistor RZ1. The other end of varistor RZ1 is connected to varistor RZ2. The other end of varistor RZ2 is connected to the positive terminals of high-voltage silicon stack diodes D3 and D4 and one end of sampling resistor Rs. The other end of sampling resistor Rs is suspended on the -150kV high-voltage power supply output terminal and connected to one end of inductor L1. The other end of inductor L1 is connected to one end of filter capacitor C6 and the high-voltage electron gun bias cup. The common point of inductor L1 and filter capacitor C6 is the negative terminal V- of the integrated bias power supply output, with a voltage of -150kV. The other end of filter capacitor C6 is connected to the common terminal of resistors R3, R4, and R5, which is the positive terminal V+ of the integrated bias power supply output. V+ is connected to one end of resistors R7 and R8 respectively. The other ends of resistors R7 and R8 are connected to the two ends of the high-voltage electron gun cathode filament respectively. Capacitor C5 is connected in parallel across resistor R4.

[0020] When the load electron gun fires, the protection unit suppresses and absorbs the high-voltage pulse signal to prevent the high-voltage pulse signal from damaging the bias power supply.

[0021] The beam control unit includes: transistor assembly M1, transistor control board M2, resistor R9, diode D6, varistor RZ3, and resistor Rs.

[0022] The collector of transistor assembly M1 is connected to the negative terminal of diode D6 and one end of resistor R9, respectively. The other end of resistor R9 is connected to the positive output terminal V+ of the bias power supply. The emitter of transistor assembly M1 is connected to the positive terminal of diode D6 and the common terminal of resistors Rs and RZ2, respectively. The base of transistor assembly M1 is connected to the positive output signal terminal of the transistor control board. The emitter of transistor assembly M1 is connected to the ground output signal terminal of the transistor control board. One end of varistor RZ3 is connected to the positive terminal of diode D6, and the other end of varistor RZ3 is connected to the positive output terminal V+ of the bias power supply.

[0023] When the electron gun is working, the electron movement path is as follows: the high-voltage power supply output passes through the bias power supply current sampling resistor (working beam current sampling resistor) Rs, then through the transistor assembly M2, resistor R9, and then through resistors R7 / R8 to the electron gun cathode filament. The electrons then flow from the electron gun cathode to the anode, and finally to the positive terminal of the high-voltage power supply. The current sampled by the sampling resistor is the actual working beam current of the electron gun.

[0024] The bias power supply's operating procedure and voltage regulation method are as follows: First, the power supply output voltage is acquired through resistor R6. This voltage forms a closed-loop control circuit through the isolation transmission unit, the main control unit, and the isolation drive unit, causing the bias power supply to output a -2100V DC voltage to suppress the electron beam, at which point there is no beam current. Second, the beam current feedback circuit is formed by the beam current sampling resistor Rs and the transistor control board in the beam current circuit. The on-state voltage drop of the transistor component M1 is directly and linearly controlled according to the acquired beam current magnitude. The output voltage of the bias power supply (bias cup voltage) is adjusted by the on-state voltage drop of the transistor, thereby controlling the working beam current magnitude. Finally, the bias power supply outputs -2100V DC to stop outputting the beam current.

[0025] The bias power supply directly samples and controls the working beam current in real time throughout the beam modulation process. It changes the bias cup voltage based on the beam current magnitude, making the bias cup voltage adaptive to the beam current. Therefore, it can track and regulate the beam current in the working circuit in real time with a fast response speed. Because the entire beam current adjustment is linear, overshoot or beam overshoot will not occur.

[0026] like Figure 3 As shown, the isolated power supply circuit includes: an AC / DC module unit, a DC / AC module unit, an isolated transmission unit, a rectifier and filter unit, a DC / DC unit 1, and a DC / DC unit 2, with each module connected in sequence.

[0027] The isolated power supply circuit uses a DC / DC isolation module to generate DC voltages of different amplitudes to power the control unit of the control component, the beam current and voltage isolation sampling unit, and to achieve floating isolation power supply for the bias power sampling control circuit through an isolation transformer. The AC / DC module unit converts AC220V AC voltage to +24V DC voltage; the DC / AC module unit converts +24V DC voltage to 24V AC voltage with a frequency of 200kHz; the isolated transmission unit consists of 6-stage isolation transformers with a 1:1 ratio connected in series, mainly to achieve 1:1 signal transmission and 200kV isolation between input and output signals; the rectifier and filter unit converts +24V AC voltage to DC voltage; DC / DC unit 1 converts DC voltage to ±15V and ±5V to power the integrated operational amplifier, microcontroller and fiber optic converter in the control unit of the control component; DC / DC unit 2 converts DC voltage to ±15V and +5V to power the voltage-frequency conversion chip fiber optic converter in the beam current and voltage isolation sampling unit.

[0028] In summary, the working principle of the integrated bias power supply is as follows: An AC220V voltage source generates approximately 310V DC voltage after passing through a soft-start and low-voltage rectification and filtering unit. This DC voltage then passes through a half-bridge inverter unit, an LC resonant circuit, and a high-frequency boost unit to generate a 1500V, 40kHz high-frequency AC voltage. This AC voltage is then isolated by an isolation transmission unit to achieve 200kV isolation between the input and output signals and a 1:1 voltage signal output. This signal passes through a high-voltage rectification and filtering unit to generate a -2100V DC voltage. This DC voltage is then output after passing through a protection unit and a beam current control component unit. The beam current and voltage isolation sampling unit samples the bias voltage output voltage and the high-voltage electron beam welding machine's working beam current in real time. The collected voltage and beam current signals enter the main control unit. The main control unit processes the sampled voltage and generates a voltage pulse signal. This signal passes through an isolation drive unit to change the pulse width and frequency of the switching devices in the half-bridge inverter unit, thereby stabilizing the bias power supply output at -2100V. When the electron beam welder is operating, the control unit of the control component adjusts the conduction voltage drop of the transistor component in the beam current control component unit in real time and rapidly according to the working beam current, thereby changing the bias voltage output voltage and enabling precise and rapid adjustment of the working beam current of the high-voltage electron beam welder. The AC220V is converted into a 24V DC voltage by the AC / DC module, and then output as a 24V AC signal with a frequency of 200kHz by the DC / AC module. This AC signal is isolated to 200kV by the isolation power supply unit and generates ±15V and ±5V DC voltages to power the control unit of the control component, the beam current and voltage isolation sampling unit.

[0029] like Figure 4As shown, the integrated bias power supply is integrated into the power system of the high-voltage electron beam welder and applied to the self-developed high-voltage electron gun. A Faraday cup is used to collect the working beam current during electron gun welding. According to ISO 14744 standard, the beam current stability is tested by running it for 30 minutes at the highest voltage and 0.1 times the maximum current (150 kV, 3.3 mA). The beam current stability test results are as follows: Figure 4 As shown in the figure, the beam current stability is better than that at 150 kV and 3.3 mA, indicating good beam current stability. Under -150 kV / 33 mA conditions, the reproducibility of the electron gun's working beam current was tested by switching the power supply on and off five times. The beam current collected by the Faraday cup was between 33.24 mA and 33.26 mA, demonstrating good beam current reproducibility.

[0030] In summary, the integrated bias power supply of this invention effectively solves the problems of relatively long bias power supply response cycle and adjustment time, and further addresses the difficulty of precise control. It achieves real-time rapid tracking and fine control of the working beam current, enabling the beam current stability of the high-voltage electron beam welder to be better than ±0.005mA and the beam current reproducibility to reach ±0.04%. Both the beam current stability and reproducibility surpass the international advanced level.

[0031] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0032] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0033] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An integrated bias power supply circuit, characterized in that, include: The 220V voltage source is connected to the soft start and low voltage rectification and filtering unit and the AC / DC module unit. The soft start and low voltage rectification and filtering unit is connected to the half-bridge inverter unit. The half-bridge inverter unit is connected to the LC resonant and high frequency boost unit. The LC resonant and high frequency boost unit is connected to the isolation transmission unit. The isolation transmission unit is connected to the protection unit. The protection unit is connected to the beam current control component unit, which is connected to the control component control unit and the beam current and voltage isolation sampling unit, and also provides bias output to the outside. The beam current and voltage isolation sampling unit is connected to the control component control unit and the main control unit, which is connected to the setting and display unit, the isolation drive unit and the control component control unit, and the isolation drive unit is connected to the half-bridge inverter unit. The AD / DC module unit is connected to the DC / AC module unit, the DC / AC module unit is connected to the isolated power supply unit, and the isolated power supply unit is connected to the beam current and voltage isolation sampling unit and the control unit of the regulation component.

2. The integrated bias power supply circuit according to claim 1, characterized in that, The LC resonant high-frequency inverter unit is as follows: Filter capacitor C1 is connected in parallel across resistor R1, and filter capacitor C2 is connected in parallel across resistor R2. One end of resistor R1 is connected to half-bridge IGBT switch Q1, and the other end is connected to resistor R2. The other end of resistor R2 is connected to half-bridge IGBT switch Q2, and the other end of half-bridge IGBT switch Q2 is connected to resonant capacitor C3. The other end of half-bridge IGBT switch Q1 is connected to resonant capacitor C3, and the other end of resonant capacitor C3 is connected to one end of the primary winding of high-frequency isolation transformer T1. The connection point of resistors R1 and R2 is connected to the other end of the primary winding of high-frequency isolation transformer T1.

3. The integrated bias power supply circuit according to claim 1, characterized in that, The isolation transmission unit consists of six isolation transformers with a 1:1 ratio connected in series.

4. The integrated bias power supply circuit according to claim 1, characterized in that, The high-voltage rectifier filter unit includes: the negative terminal of high-voltage silicon diode D1 is connected to the negative terminal of high-voltage silicon diode D2; the positive terminal of high-voltage silicon diode D1 is connected to the negative terminal of high-voltage silicon diode D3 and the isolation transmission unit; the positive terminal of high-voltage silicon diode D3 is connected to the negative terminal of high-voltage silicon diode D4 and the positive terminal of high-voltage silicon diode D2; one end of the filter capacitor C4 is connected to the negative terminals of high-voltage silicon diodes D1 and D2; and the other end of the filter capacitor C4 is connected to the positive terminals of high-voltage silicon diodes D3 and D4.

5. The integrated bias power supply circuit according to claim 1, characterized in that, The protection unit includes: Resistor R3 is connected to the negative terminal of diode D5. The positive terminal of diode D5 is connected to resistor R4. The other end of resistor R4 is connected to resistor R3 and varistor RZ1. The other end of varistor RZ1 is connected to varistor RZ2. The other end of varistor RZ2 is connected to the positive terminals of high-voltage silicon stack diodes D3 and D4 and one end of sampling resistor Rs. The other end of sampling resistor Rs is suspended on the -150kV high-voltage power supply output terminal and connected to one end of inductor L1. The other end of inductor L1 is connected to one end of filter capacitor C6 and the high-voltage electron gun bias cup. The common point of inductor L1 and filter capacitor C6 is the negative terminal V- of the integrated bias power supply output, with a voltage of -150kV. The other end of filter capacitor C6 is connected to the common terminal of resistors R3, R4, and R5, which is the positive terminal V+ of the integrated bias power supply output. V+ is connected to one end of resistors R7 and R8 respectively. The other ends of resistors R7 and R8 are connected to the two ends of the high-voltage electron gun cathode filament respectively. Capacitor C5 is connected in parallel across resistor R4.

6. The integrated bias power supply circuit according to claim 1, characterized in that, The beam control component unit includes: The collector of transistor assembly M1 is connected to the negative terminal of diode D6 and one end of resistor R9, respectively. The other end of resistor R9 is connected to the positive output terminal V+ of the bias power supply. The emitter of transistor assembly M1 is connected to the positive terminal of diode D6 and the common terminal of resistors Rs and RZ2, respectively. The base of transistor assembly M1 is connected to the positive output signal terminal of the transistor control board. The emitter of transistor assembly M1 is connected to the ground output signal terminal of the transistor control board. One end of varistor RZ3 is connected to the positive terminal of diode D6, and the other end of varistor RZ3 is connected to the positive output terminal V+ of the bias power supply.

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