Frequency-based impedance adjustment in tuned circuits

Abstract

A substrate processing system for processing a substrate within a processing chamber includes a matching network, a first tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from an RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is different from the matching network and includes circuit components having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode of a substrate support. The controller determines a target impedance for the circuit component and, based on the target impedance, signals to the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency, thereby changing the first impedance of the circuit component to match the target impedance.

Description

This application is a divisional application of patent application No. 202080078827.8, filed on October 27, 2020, by Rum Research Corporation, entitled "Frequency-Based Impedance Adjustment in Tuning Circuits". Cross-references to related applications

[0001] This application claims priority to U.S. Provisional Application No. 62 / 935,976, filed November 15, 2019. The entire disclosure of the above-cited application is incorporated herein by reference. Technical Field

[0002] This invention relates to an electrostatic support device that utilizes electrostatic attraction, and more particularly to a tuning circuit for clamping the electrostatic support device and a radio frequency (RF) electrode. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors, within the scope described in this background section and in the various aspects of the specification that could not be identified as prior art at the time of filing, neither expressly nor impliedly acknowledges that it is prior art to this disclosure.

[0004] Substrate processing systems can be used for etching, deposition, and / or other processing of substrates such as semiconductor wafers. Exemplary processes that can be performed on a substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), ion implantation, and / or other etching, deposition, and cleaning processes. For example, during an etching process, a substrate can be placed on an electrostatic chuck (ESC) in the substrate processing system and a thin film can be etched onto the substrate. Summary of the Invention

[0005] A substrate processing system is provided for processing a substrate in a processing chamber. The substrate processing system includes a matching network, a first tuning circuit, and a controller. The matching network is configured to receive a first radio frequency (RF) signal having a first frequency from an RF generator and to match the input of the matching network to the output impedance of the RF generator. The first tuning circuit is different from the matching network and includes a first circuit component having a first impedance. The first tuning circuit is configured to receive the output of the matching network and output a second RF signal to a first electrode of a substrate support. The controller is configured to determine a target impedance for the first circuit component and, based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency, thereby changing the first impedance of the first circuit component to match the target impedance.

[0006] Among other features, the substrate processing system further includes the radio frequency generator having a central frequency, and the radio frequency generator is configured to generate the first radio frequency signal having the first frequency based on a control signal. The controller is configured to generate the control signal. The first frequency differs from the central frequency within a predetermined range.

[0007] Among other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the first tuning circuit.

[0008] Among other features, the controller is configured to adjust the first frequency to the second frequency independently of matching the input of the matching network to the output impedance of the RF generator.

[0009] Among other features, the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the RF generator.

[0010] Among other features, the matching network is configured to maintain impedance matching between the input of the matching network and the output of the RF generator when the controller adjusts the first frequency to the second frequency.

[0011] Among other features, the first tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to the first electrode. The second circuit component is connected to a second electrode in the substrate support. The controller is configured to adjust the first frequency to the second frequency to adjust the first impedance of the first circuit component and the second impedance of the second circuit component, thereby changing the power distribution from the first tuning circuit to the first electrode and the second electrode.

[0012] Among other features, the frequency of the second radio frequency signal is the same as the frequency of the first radio frequency signal.

[0013] Among other features, the controller is configured to adjust the capacitance or inductance of the first circuit component in addition to adjusting the first frequency to the second frequency when adjusting the first impedance to match the target impedance.

[0014] Among other features, the controller is configured to maintain at least one of the capacitance or inductance of the first circuit component at a fixed value when adjusting the first impedance.

[0015] Among other features, the first tuning circuit includes distributing a total amount of power received from the matching network to the first circuit component and the second circuit component. The controller is configured to adjust the first frequency to the second frequency to adjust a first portion of the total amount of power supplied to the first circuit component and a second portion of the total amount of power supplied to the second circuit component.

[0016] Among other features, the substrate processing system further includes: a source terminal; and the substrate support including the first electrode and the second electrode. The first electrode and the second electrode receive power from the matching network via the source terminal. The first tuning circuit includes at least one of: a first impedance group connected in series between the first electrode and the matching network, wherein the first impedance group receives the second radio frequency signal from the matching network via the source terminal; or a second impedance group connected between the output of the matching network and a reference terminal, wherein the second impedance group receives the second radio frequency signal from the matching network via the source terminal.

[0017] Among other features, the first tuning circuit includes a first impedance group and a second impedance group.

[0018] Among other features, the substrate processing system further includes a second tuning circuit, a third tuning circuit, and a third electrode. The first tuning circuit is connected to the first electrode to modify the output of the matching network, thereby generating the second radio frequency signal. The second tuning circuit is connected to the second electrode and configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode. The third tuning circuit is connected to the third electrode and configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode.

[0019] Among other features, the substrate support is an electrostatic chuck. The first and second electrodes are clamping electrodes and configured to receive a clamping voltage to clamp the substrate onto the substrate support. The third electrode is a bias electrode and configured to receive a bias voltage.

[0020] Among other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second and third electrodes are bias electrodes.

[0021] Among other features, there is no matching network connected between (i) the source terminal and (ii) the first electrode and the second electrode.

[0022] Among other features, the first circuit component is connected to the first and second electrodes in the substrate support and affects the power distribution to the first and second electrodes.

[0023] Among other features, a method of operating a substrate processing system is provided. The method includes: selecting a process; determining a formulation for the selected process, the formulation including system operating parameters; determining a first target impedance value for a frequency of an RF generator and the impedance of a tuning circuit based on the selected process and the system operating reference; sending a signal to the RF generator to generate a first RF signal; impedance matching the output of the RF generator through a matching network, wherein the matching network is different from the tuning circuit; tuning the signal output of the matching network through the matching network to generate a second RF signal; providing the second RF signal to a first electrode in a substrate support; and adjusting a first frequency of the first RF signal to a second frequency to adjust the impedance of the tuning circuit, thereby matching the first target impedance value.

[0024] Among other features, the method also includes adjusting the first frequency to the second frequency independently of matching the output of the matching network to the output impedance of the RF generator.

[0025] Among other features, the method also includes adjusting the first frequency to the second frequency without affecting the impedance matching between the matching network and the RF generator.

[0026] Among other features, the method further includes maintaining impedance matching between the input of the matching network and the output of the RF generator through the matching network when adjusting the first frequency to the second frequency.

[0027] Among other features, the method further includes: collecting sensor output data; determining a second target impedance value based on the sensor output data; and adjusting the first frequency to a third frequency to adjust the impedance of the tuning circuit, thereby matching the second impedance value.

[0028] Among other features, the method further includes adjusting at least one of the capacitance or inductance values ​​in the impedance to match the first target impedance value.

[0029] Among other features, the method further includes adjusting the first frequency to the second frequency to adjust the impedance to match the first impedance value, but without adjusting the capacitance value of the impedance.

[0030] Among other features, the method further includes adjusting the first frequency to the second frequency to adjust the impedance to match the first impedance value, but without adjusting the inductance value of the impedance.

[0031] In other features, the impedance is connected in parallel to the first and second electrodes in the substrate support and affects the power distribution to the first and second electrodes.

[0032] Among other features, the method further includes: placing a substrate onto the substrate support in a processing chamber; and performing a processing operation for the selected process, which includes providing power from the matching network to the first electrode and the second electrode in the substrate support. The tuning circuit includes at least one of: a first impedance group connected in series between the first electrode and the matching network, wherein the first impedance group receives the second radio frequency signal from the matching network; or a second impedance group connected between the output of the matching network and a reference terminal, wherein the second impedance group receives the second radio frequency signal from the matching network.

[0033] Among other features, the method further includes, during the processing operation, (i) adjusting the first frequency to the second frequency; and (ii) adjusting at least one of the capacitance or inductance values ​​of the first impedance group or the second impedance group.

[0034] Among other features, the method further includes adjusting the impedance value of the first tuning circuit when performing the processing operation. Among other features, the method further includes, when performing the processing operation: collecting sensor output data; determining one or more parameters based on the sensor output data; and adjusting the impedance value of the first impedance group or the second impedance group based on the one or more parameters.

[0035] Among other features, the method further includes: determining a feature or characteristic of the processing chamber; and setting the impedance value of the first impedance group or the second impedance group based on the feature or characteristic.

[0036] Among other features, the method further includes: determining a feature or characteristic of the substrate support; and setting the impedance value of the first impedance group or the second impedance group based on the feature or characteristic.

[0037] Among other features, the method further includes: adjusting the impedance of at least one of the first impedance group or the second impedance group based on changes in the characteristics to follow the corresponding trajectory.

[0038] Among other features, the method further includes calculating or determining the trajectory based on at least one of the following: the feature; the characteristic; one or more other features of the substrate, the substrate support, or the processing chamber; and one or more other characteristics of the substrate, the substrate support, or the processing chamber.

[0039] Among other features, the method further includes: determining a feature or characteristic of the substrate; and setting the impedance value of the tuning circuit based on the feature or characteristic.

[0040] Among other features, the method further includes: supplying a clamping voltage to the first electrode via the matching network to clamp the substrate onto the substrate support; supplying a bias voltage to the second electrode; and tuning the clamping voltage and the bias voltage via the tuning circuit or another tuning circuit. The substrate support is an electrostatic chuck.

[0041] Among other features, a substrate processing system is provided, comprising a matching network, a tuning circuit, and a controller. The matching network is configured to receive a first radio frequency signal having a first frequency from a radio frequency generator and to match the input of the matching network to the output impedance of the radio frequency generator. The tuning circuit is different from the matching network. The tuning circuit is configured to output a second radio frequency signal to a first electrode in a substrate support and a third radio frequency signal to a second electrode in the substrate support based on the output of the matching network. The controller is configured to adjust the power distribution between the first and second electrodes in the substrate support by signaling the radio frequency generator to adjust the first frequency of the first radio frequency signal received at the matching network to a second frequency.

[0042] Among other features, the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the tuning circuit.

[0043] Among other features, the controller is configured to adjust the first frequency to the second frequency independently of matching the input of the matching network to the output impedance of the RF generator.

[0044] Among other features, the controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the RF generator.

[0045] Among other features, the matching network is configured to maintain impedance matching between the input of the matching network and the output of the RF generator when the controller adjusts the first frequency to the second frequency.

[0046] Among other features, the tuning circuit includes a first circuit component and a second circuit component. The first circuit component is connected to the first electrode. The second circuit component is connected to the second electrode; and adjusting the first frequency to the second frequency changes the first impedance of the first circuit component and the second impedance of the second circuit component.

[0047] Among other features, the tuning circuit supplies a total amount of power to the first electrode and the second electrode. Adjusting the first frequency to the second frequency and the first impedance to the second impedance adjusts a first percentage of the total power supplied to the first electrode and a second percentage of the total power supplied to the second electrode.

[0048] Among other features, the controller is configured to adjust the capacitance or inductance value of the first circuit component when adjusting the first frequency to the second frequency.

[0049] Among other features, the controller is configured to maintain at least one of the capacitance or inductance values ​​of the first circuit component at a fixed value when the first frequency is adjusted to the second frequency.

[0050] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0051] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0052] Figure 1 This is a functional block diagram of an example of a substrate processing system according to an embodiment of the present invention, comprising a frequency controller, an ESC with electrodes, a corresponding matching network, and one or more tuning circuits.

[0053] Figure 2 This is a functional block diagram of an exemplary capacitively coupled circuit including a tuning circuit for clamping an electrode and a bias electrode, according to an embodiment of the present invention.

[0054] Figure 3 This is a functional block diagram of an example of a capacitively coupled circuit including a tuning circuit for two clamping electrodes and a bias electrode, according to an embodiment of the present invention.

[0055] Figure 4 This is a functional block diagram of an example of a capacitively coupled circuit including a tuning circuit for holding an electrode and two bias electrodes, according to an embodiment of the present invention.

[0056] Figure 5This is a functional block diagram of an example of a capacitively coupled circuit including a tuning circuit for holding an electrode and three bias electrodes, according to an embodiment of the present invention.

[0057] Figure 6 This is a functional block diagram of an example of a tuning circuit for holding an electrode and a bias electrode according to an embodiment of the present invention.

[0058] Figure 7 This is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, which is connected to a single RF power supply and includes an inductor and a capacitor connected in series for two clamping electrode and bias electrode rings.

[0059] Figure 8 This is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, which is connected to a single RF power supply and includes an inductor and a capacitor connected in parallel for two clamping electrode and bias electrode rings.

[0060] Figure 9 This is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention. The tuning circuit is connected to a dual RF power supply and includes an inductor and a capacitor connected in series for two clamping electrode and bias electrode rings, as well as an inductor and a capacitor connected in parallel.

[0061] Figure 10 This is a functional block diagram of an example of a two-tuning circuit according to an embodiment of the present invention. The two tuning circuits are connected to their respective RF power supplies and include inductors and capacitors connected in series or in parallel for two clamping electrode and bias electrode rings.

[0062] Figure 11 This is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, which includes a capacitor and an inductor connected in parallel for two clamping electrodes and a bias electrode ring.

[0063] Figure 12 An operating method of a substrate processing system according to an embodiment of the present invention is shown, comprising setting and adjusting the frequency of an RF generator and the impedance value of a tuning circuit for an electrostatic chuck electrode; and

[0064] Figure 13 This is an example of a substrate support comprising an outer ring electrode and two inner electrodes according to an embodiment of the present invention.

[0065] In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical parts. Detailed Implementation

[0066] In a capacitively coupled plasma (CCP) system, an RF voltage signal can be supplied to a nozzle and / or substrate support (such as an electrostatic chuck or platform) in the processing chamber to generate and sustain plasma during substrate processing (such as plasma provided during etching or deposition processes). For example, the substrate support may include multiple electrodes for receiving the RF voltage. The electrodes may have different sizes and shapes and may be disposed at different locations within the substrate support.

[0067] The examples described herein include: (i) a frequency controller for setting and adjusting the frequency of an RF generator; and (ii) a tuning circuit for controlling the RF voltage supplied to electrodes of a substrate support. The tuning circuit is distinct from the matching network connected between the RF generator and the tuning circuit. Due to this difference, the tuning circuit is not included in and is separate from the matching network. The frequency controller adjusts the RF generator frequency to adjust the power distribution within and throughout the substrate support. The adjustment of the RF generator frequency is independent of impedance matching and / or minimizing reflected power. The frequency controller adjusts the frequency to effectively adjust the impedance of the tuning circuit, which affects power distribution and wafer handling. The disclosed frequency adjustments can be performed without directly changing the variable capacitance and inductance values ​​of the circuit components included in the tuning circuit, or the disclosed frequency adjustments can be performed in addition to directly adjusting the capacitance and inductance values ​​of the circuit components. In one embodiment, the variation in the RF generator frequency falls within a predetermined frequency range within which impedance mismatch between the RF generator and the matching network does not occur. In another embodiment, variations in the RF generator frequency fall within the operating frequency range, which can cause one or more impedance mismatches between the RF generator and the matching network. In this latter embodiment, the matching network is configured to actively maintain impedance matching within the operating frequency range of the RF generator.

[0068] Adjusting the RF generator frequency to modify the impedance of the tuning circuit and thus change the power distribution in the substrate support differs from adjusting the RF generator frequency to achieve impedance matching. The impedance of the matching network can be changed by adjusting the RF generator frequency to match the output impedance of the RF generator. This is achieved without altering the power distribution in the substrate support and / or wafer uniformity. Conversely, RF generator frequency adjustment can modify the power distribution and on-wafer processing to provide or alter wafer uniformity.

[0069] The tuning circuit includes variable and / or fixed impedances that can be tuned for the substrate processing being performed. The RF voltage supplied to the electrodes and the corresponding current can be controlled to alter aspects of the generated plasma. During the processing, the substrate is placed on a substrate support, and one or more layers of the substrate (such as thin film layers) may be etched or deposited, for example. By customizing the RF voltages supplied to the different electrodes, the parameters of one or more layers can be spatially varied and / or tuned across the wafer depending on the electrode positions. For example, the parameters of one or more layers may include intrinsic characteristic values ​​such as uniformity, stress, refractive index, etching rate, deposition rate, thickness, and / or other measured quantities.

[0070] The disclosed RF power is provided by one or more RF power sources. In one embodiment, RF power is provided by feeding common node RF power from a single RF power source. The RF power supplied from the common node is then provided to multiple different electrodes of the substrate support via respective paths. These paths include tuning circuitry and / or impedances capable of altering the corresponding RF voltage, current level, phase, and / or frequency content. The impedances may include series or parallel connections. Other embodiments disclosed herein involve multiple power sources, multiple nodes, and various paths.

[0071] The RF voltage and current levels supplied to the substrate support can also be altered by adjusting the size, shape, and pattern of the multiple electrodes. For example, changing the radius of the electrodes can alter and / or tune the RF voltage supplied to the plasma from the ring and / or circular electrodes, the substrate processing performed using the ring and / or circular electrodes, and / or the resulting substrate characteristics.

[0072] The substrate processing system may have multiple features, characteristics, and / or parameters that provide degrees of freedom, which can be set and / or adjusted to control aspects of the resulting film layer on the substrate during substrate processing. For example, RF power levels, chamber geometry, the use of a focusing ring, nozzle orifice pattern, nozzle shape, electrode pattern, gas pressure, gas composition, etc., can be set and / or controlled to provide a substrate with a target film layer composition and profile.

[0073] The disclosed examples provide another degree of freedom for one or more layers of the tuning substrate. This degree of freedom is provided by setting and / or adjusting the impedance of the tuning circuitry (e.g., selecting, changing, and / or controlling capacitors, inductors, reactances, resistors, layout, etc.). The profile refers to the aforementioned parameters of one or more layers.

[0074] For example, the radial profile of a substrate can be altered by changing a metal or dielectric ring component near the circumferential edge of the substrate. This may involve adjusting parameters such as gas pressure, gas flow rate, gas composition, RF output power, the frequency of the RF signal supplied to the electrodes of the substrate support, and / or other parameters. Changing these parameters at a specific location to provide a target layer feature (such as a specific layer thickness or shape at the circumferential edge) can change other parameters at the same location and / or other locations and / or affect other features. Therefore, these parameters do not independently adjust certain features. As another example, the circumferential edge of the substrate can be changed by using a focusing ring outside the circumferential edge. However, using a focusing ring can affect the gas flow rate at the center of the substrate, which can affect the processing and thus the results at the center of the substrate. Other exemplary layer features include specific trench depths or widths, trench spacing, distances between conductive components, layer composition, etc.

[0075] The more parameters and degrees of freedom there are in setting and controlling the contours of one or more layers of a substrate, the more likely it is to provide specific features without negatively impacting other features. Furthermore, as the number of parameters and degrees of freedom increase, the number, composition, and layout (or patterning) of features that can be formed also increase. The examples disclosed herein increase the flexibility of substrate layer design and the selectivity of location-specific designs, and enable substrate processing systems to provide diverse sets of features.

[0076] Figure 1 A substrate processing system 100 including an ESC (or substrate support) 101 is shown. An ESC refers to a substrate support containing clamping electrodes, to which voltage is supplied to create an attractive force to clamp the substrate onto the ESC. The ESC 101 can be configured to be the same as or similar to any ESC disclosed herein. Although Figure 1 This describes a capacitively coupled plasma (CCP) system, but the embodiments disclosed herein are applicable to transformer-coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources that include substrate supports. The embodiments are applicable to PVD processes, PECVD processes, chemically enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etching processes, and / or other etching, deposition, and cleaning processes.

[0077] ESC 101 may include a top plate 102 and a bottom plate 103. Although ESC 101 is shown as having two plates, ESC 101 may contain a single plate. Plates 102 and 103 may be formed of ceramic and / or other materials. Figure 1-5 Each ESC in 7-11 is displayed as having specific characteristics but not others, but each ESC can be modified to include those disclosed herein. Figure 1-5 And any features of 7-11.

[0078] Although ESC 101 is shown mounted at the bottom of the processing chamber and not configured to rotate, ESC 101, as well as other ESCs disclosed herein, may be located at the bottom or top of the processing chamber and may be configured as a rotating chuck to rotate during substrate processing. If mounted at the top of the processing chamber, ESC 101 may have a similar construction to other ESCs disclosed herein but be flipped upside down and may include peripheral substrate support, clamping, and / or fastening hardware.

[0079] The substrate processing system 100 includes a processing chamber 104. An ESC 101 is surrounded within the processing chamber 104. The processing chamber 104 also surrounds other components, such as an upper electrode 105, and contains RF plasma. During operation, a substrate 107 is placed on and electrostatically held to the top plate 102 of the ESC 101.

[0080] By way of example only, the upper electrode 105 may include a nozzle 109 that introduces and disperses gas. The nozzle 109 may include a rod 111, one end of which is connected to the upper surface of the processing chamber 104. The nozzle 109 is generally cylindrical and extends radially outward from the opposite end of the rod 111 at a location separated from the upper surface of the processing chamber 104. The substrate-facing surface of the nozzle 109 includes a plurality of orifices through which the processing gas or purge gas flows. Alternatively, the upper electrode 105 may include a conductive plate and may otherwise guide the gas. One or both of plates 102 and 103 may be used as the lower electrode.

[0081] One or both of plates 102 and 103 may contain a temperature control element (TCE). For example, Figure 1 A top plate 102, incorporating TCE 110 and usable as a heating plate, is shown. An intermediate layer 114 is disposed between plates 102 and 103. The intermediate layer 114 can bond the top plate 102 to the bottom plate 103. For example, the intermediate layer may be formed of an adhesive material suitable for bonding the top plate 102 to the bottom plate 103. The bottom plate 103 may include one or more gas channels 115 and / or one or more coolant channels 116 for allowing back-side gas to flow to the back side of the substrate 107 and for allowing coolant to flow through the bottom plate 103.

[0082] RF generation system 120 generates an RF voltage and outputs it to an upper electrode 105 and a lower electrode (such as one or more of plates 102, 103). One of the upper electrode 105 and ESC 101 can be DC grounded, AC grounded, or floating. For example, RF generation system 120 may be controlled by system controller 121 and include one or more RF generators 122 (e.g., capacitively coupled plasma RF power generators, bias power generators, and / or other RF power generators) capable of generating RF voltage, which is fed to the upper electrode 105 and / or ESC 101 through one or more matching and distribution networks 124. System controller 121 includes a frequency controller 119 that sets and adjusts the frequency of the RF signals output from RF generators 123, 125. The frequency can be adjusted to regulate power distribution within and throughout ESC 101.

[0083] For example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide RF voltage or simply connect the nozzle 109 to a ground reference potential. The second RF generator 125 and the second RF matching network 129 can be individually or collectively referred to as power sources and provide RF / bias voltage to ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power capable of ionizing the gas and driving the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power capable of ionizing the gas and driving the plasma. One of the RF generators 123 and 125 can be a high-power RF generator, producing, for example, 6-10 kilowatts (kW) or higher power.

[0084] The second RF matching network 129 provides impedance matching so that the input impedance of the second RF matching network 129 matches the output impedance of the second RF generator 125. The second RF matching network 129 may (i) maintain fixed capacitance and inductance values ​​of its circuit components (such as capacitors and inductors) to provide impedance matching over the operating frequency range of the RF generator 125; or (ii) adjust the capacitance and / or inductance values ​​of the impedance 128 of the matching network 129 to maintain impedance matching over the operating frequency range of the RF generator 125. This is done to minimize reflected power back to the RF generator 125. The second impedance matching network 129 provides impedance matching independent of the frequency of the RF signal output from the second RF generator 125. The second RF matching network 129 includes impedances (such as capacitors and inductors) 128 and supplies power to RF electrodes, such as RF electrodes 131 and 133 in plates 102 and 103. The RF electrodes may be located in one or both of plates 102 and 103. The RF electrodes may be located near the upper surface of ESC 101 (e.g., when ESC 101 is used as a clamping electrode) and / or in other locations within ESC 101 (e.g., when ESC 101 is used for RF biasing purposes). Some of the electrodes may be used as both clamping electrodes and RF biasing electrodes.

[0085] The RF electrodes may receive power from other power sources. For example, some of the RF electrodes may receive power from power source 135 instead of the second RF matching network 129, or some of the RF electrodes may receive power from power source 135 in addition to receiving power from the second RF matching network 129. In some embodiments, power source 135 may not include a matching network and / or no matching network may be disposed between power source 135 and the RF electrodes. Some of the RF electrodes may receive power from the second RF matching network 129 and / or power source 135 to electrostatically clamp the substrate to top plate 102. Power source 135 may be controlled by system controller 121. Tuning circuitry 139 may be connected between (i) the second RF matching network 129 and corresponding electrodes among the plurality of electrodes 131, 133, 137, and (ii) power source 135 and corresponding electrodes among the plurality of electrodes 131, 133, 137. In one embodiment, tuning circuitry 139 is disposed outside processing chamber 104, separate from and downstream of the second RF matching network 129. An example of the tuning circuit 139 is shown in Figure 2-11 middle.

[0086] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. Gas sources 132 supply one or more precursors and mixtures thereof. Gas sources 132 may also supply etching gas, carrier gas, and / or purge gas. Evaporated precursors may also be used. Gas sources 132 are connected to manifold 140 via valves 134-1, 134-2, ..., 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., 136-N (collectively referred to as mass flow controllers 136). The output of manifold 140 is fed to processing chamber 104. Only, for example, is the output of manifold 140 fed to nozzle 109.

[0087] The substrate processing system 100 also includes a cooling system 141, which includes a temperature controller 142 connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown to be separate from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or more of the boards 102 and 103 may include multiple temperature control zones (e.g., four zones, each containing four temperature sensors).

[0088] Temperature controller 142 controls operation, and thus controls the temperature of TCE 110, to control the temperature of plates 102, 103, and the substrate (e.g., substrate 107). Temperature controller 142 and / or system controller 121 can control the flow rate of a back-side gas (e.g., helium) to gas channel 115 for cooling the substrate by controlling the airflow from one or more gas sources 132 to gas channel 115. Temperature controller 142 can also communicate with coolant assembly 146 to control the flow of a first coolant through channel 116 (pressure and flow rate of the cooling fluid). First coolant assembly 146 can receive cooling fluid from a reservoir (not shown). For example, coolant assembly 146 may include a coolant pump and a reservoir. Temperature controller 142 operates coolant assembly 146 to allow coolant to flow through channel 116 to cool substrate 103. Temperature controller 142 can control the flow rate and temperature of the coolant. Temperature controller 142 controls the current supplied to TCE 110 and the pressure and flow rate of gas and / or coolant supplied to channels 115 and 116 based on parameters detected by sensors 143 and 144 within processing chamber 104. Sensors 143 and 144 may include resistive temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. Parameters such as temperature, gas pressure, voltage, and current level can be detected using sensors 143 and 144 and / or other sensors included in substrate processing system 100. During the etching process, substrate 107 can be heated to a predetermined temperature (e.g., 120 degrees Celsius) in the presence of high-power plasma. The flow of gas and / or coolant through channels 115 and 116 lowers the temperature of substrate 103, thereby lowering the temperature of substrate 107 (e.g., from 120°C to 80°C).

[0089] Valve 156 and pump 158 can be used to discharge reactants from processing chamber 104. System controller 121 can control components of substrate processing system 100, including controlling the level of supplied RF power, the pressure and flow rate of supplied gas, RF matching, etc. System controller 121 controls the state of valve 156 and pump 158. Robot 170 can be used to transfer substrates to and remove substrates from ESC 101. For example, robot 170 can transfer substrates between ESC 101 and loading lock 172. Robot 170 can be controlled by system controller 121. System controller 121 can control the operation of loading lock 172.

[0090] Valves, gas and / or coolant pumps, power supplies, RF generators, etc., can be referred to as actuators. Temperature control components (TCEs), gas passages, coolant passages, etc., can be referred to as temperature regulation components.

[0091] System controller 121 can directly control the impedance state of tuning circuit 139 by adjusting the variable capacitance and / or inductance values ​​of circuit components of tuning circuit 139, or indirectly through frequency controller 119. Frequency controller 119 can control and / or instruct RF generator 125 to output an RF signal with a predetermined frequency to adjust the impedance of tuning circuit 139. System controller 121 can send signals to tuning circuit 139 to directly adjust the impedance of tuning circuit 139 by adjusting the capacitance and / or inductance values ​​of capacitors and inductors of tuning circuit 139, as an alternative to or supplement to frequency adjustment. Examples of capacitors and inductors are shown in... Figure 7-11 The impedance of tuning circuit 139 can be adjusted based on feedback signals received from one or more of sensors 143, 144, 145 and / or ESC 101, processing chamber 104, second RF matching network 129, and / or power supplies 125, 135. Sensor 145 can detect voltage, current, and power levels in the second RF matching network 129. Although sensor 144 is shown in the base plate 103, one or more of the sensors may be located in the top plate 102. Sensor 144 may be located anywhere in ESC 101. Sensor 143 may be located anywhere in processing chamber 104.

[0092] System controller 121 can also control the state of impedance 128. The state of impedance 128 can be set to match the impedance encountered at the input of one or more impedance matching tuning circuits 139 at one or more outputs of the second RF matching network 129. The impedance encountered at the input of tuning circuit 139 is based on ESC 101 and the impedance of tuning circuit 139. When the impedance of tuning circuit 139 is adjusted, system controller 121 can also adjust the impedance of the second RF matching network 129 accordingly.

[0093] Although below Figure 2-11 The description shows a specific number of tuning circuits, impedances, clamping electrodes, RF electrodes, and / or other components, but may include any number of each. Furthermore, while a specific arrangement of tuning circuits, impedances, clamping electrodes, and RF electrodes is shown, and they have specific dimensions, shapes, and patterns, the components may be arranged differently and have different dimensions, shapes, and patterns.

[0094] Figure 2A capacitive coupling circuit 200 is shown, which includes a clamping tuning circuit 202, an RF tuning circuit 204, a clamping electrode 206, and an RF electrode 208. The impedance of components (such as capacitors and / or inductors) in the tuning circuits 202 and 204 may be frequency-dependent. A cross-sectional view of the nozzle (or upper electrode) 210 and ESC 212 is shown. The nozzle 210 may be connected to a reference potential or ground 214. In one embodiment, the nozzle 210 is composed of... Figure 1 The first RF matching network 127 provides RF power. Plasma 216 is provided between the nozzle 210 and the ESC 212. The substrate 218 is placed on the ESC 212.

[0095] Clamping tuning circuit 202 can be used to control the clamping voltage, current level, phase, power level, and / or frequency supplied to clamping electrode 206. RF tuning circuit 204 can be used to control the bias voltage, current level, power level, and / or frequency supplied to RF electrode 208. Tuning circuits 202 and 204 can, for example, […]. Figure 1 The second RF matching network 129 (or the first power supply), and / or Figure 1 Power supply 135 (or second power supply) receives power P 内 P 外 And it is used to adjust the pressure drop across the plasma. This may include adjusting the pressure drop across the plasma. Figure 1 The voltage difference between pairs of points above the surface of the ESC 101. Figure 6 Examples of tuning circuits 202 and 204 are shown. Figure 6 As shown, tuning circuits 202 and 204 may include one or more of the impedances. Tuning circuits 202 and 204 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 202 and 204 are shown in... Figure 7-11 The impedance can be connected in series or parallel, can be a shunt reactance, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering components (or filters), and / or other impedances. For example, the clamping electrode 206 can be circular while the RF electrode 206 can be ring-shaped.

[0096] Figure 3A capacitive coupling circuit 300 is shown, comprising a first clamping tuning circuit 302, a second clamping tuning circuit 303, an external RF tuning circuit 304, a first clamping electrode 306, a second clamping electrode 307, and an RF electrode 308. The impedance of components (such as capacitors and / or inductors) in the tuning circuits 302, 303, and 304 may be frequency-dependent. A cross-sectional view of the nozzle (or upper electrode) 310 and ESC 312 is shown. The nozzle 310 may be connected to a reference potential or ground 314. In one embodiment, the nozzle 310 is composed of... Figure 1 The first RF matching network 127 provides RF power. Plasma 316 is provided between the nozzle 310 and the ESC 312. The substrate 318 is placed on the ESC 312.

[0097] Clamping tuning circuits 302 and 303 can be used to control the clamping voltage, current level, power level, and / or frequency supplied to the clamping electrodes 306 and 307. RF tuning circuit 304 can be used to control the bias voltage, current level, power level, and / or frequency supplied to the RF electrode 308. Tuning circuits 302, 303, and 304 can, for example... Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 Power source 135 (or a second power source) and / or power P received from one or more other power sources. 夹持1 P 夹持2 With P 外 Tuning circuits 302, 303, and 304 can be used to adjust the voltage drop across the plasma. In one embodiment, P 夹持1 equals P 夹持2 . Figure 6 Examples of tuning circuits 302, 303, and 304 are shown. Figure 6 As shown, tuning circuits 302, 303, and 304 may include one or more of the impedances. Tuning circuits 302, 303, and 304 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 302, 303, and 304 are shown in... Figure 7-11 The impedance can be connected in series or parallel, can be a shunt reactance, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering components, and / or other impedances. For example, clamping electrodes 306 and 307 can be circular, while RF electrode 308 can be ring-shaped.

[0098] Figure 4A capacitive coupling circuit 400 is shown, comprising a clamping tuning circuit 402, an inner RF tuning circuit 404, an outer RF tuning circuit 405, a clamping electrode 406, an inner bias electrode 408, and an outer bias electrode 409. The impedance of components (such as capacitors and / or inductors) in the tuning circuits 402, 404, and 405 may be frequency-dependent. A cross-sectional view of a nozzle (or upper electrode) 410 and an ESC 412 is shown. The nozzle 410 may be connected to a reference potential or ground 414. In one embodiment, the nozzle 410 is composed of... Figure 1 The first RF matching network 127 provides RF power. Plasma 416 is provided between the nozzle 410 and ESC 412. Substrate 418 is placed on ESC 412.

[0099] Clamping tuning circuit 402 can be used to control the clamping voltage, current level, phase, power level, and / or frequency supplied to clamping electrode 406. RF tuning circuits 404 and 405 can be used to control the bias voltage, current level, power level, and / or frequency supplied to bias electrodes 408 and 409. Tuning circuits 402, 404, and 405 can, for example, [access parameters]. Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 Power source 135 (or a second power source), and / or receiving power P from one or more other power sources. 夹持 P 内 P 外 Tuning circuits 402, 404, and 405 can be used to adjust the voltage drop across the plasma. Figure 6 Examples of tuning circuits 402, 404, and 405 are shown. Figure 6 As shown, tuning circuits 402, 404, and 405 may include one or more of the impedances. Tuning circuits 402, 404, and 405 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 402, 404, and 405 are shown in [the diagram / illustration]. Figure 7-11 The impedance can be connected in series or parallel, can be a shunt reactance, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering components, and / or other impedances. For example, the clamping electrode 406 and the inner bias electrode 408 can be circular, while the outer bias electrode 409 can be annular.

[0100] Figure 5A capacitive coupling circuit 500 is shown, comprising a clamping tuning circuit 502, a first internal RF tuning circuit 504, a second internal tuning circuit 505, an external RF tuning circuit 506, a clamping electrode 507, a first internal bias electrode 508, a second internal bias electrode 509, and an external bias electrode 510. The impedance of components (such as capacitors and / or inductors) in the tuning circuits 502, 504, 505, and 506 may be frequency-dependent. A cross-sectional view of a nozzle (or upper electrode) 511 and an ESC 512 is shown. The nozzle 511 may be connected to a reference potential or ground 514. In one embodiment, the nozzle 511 is composed of... Figure 1 The first RF matching network 127 provides RF power. Plasma 516 is provided between nozzle 511 and ESC 512. Substrate 518 is placed on ESC 512.

[0101] Clamping tuning circuit 502 can be used to control the clamping voltage, current level, power level, and / or frequency supplied to clamping electrode 507. RF tuning circuits 504, 505, and 506 can be used to control the bias voltage, current level, phase, power level, and / or frequency supplied to bias electrodes 508, 509, and 510. Tuning circuits 502, 504, 505, and 506 can, for example, [access the bias voltage, current level, phase, power level, and / or frequency supplied to the bias electrodes 508, 509, and 510]. Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 Power source 135 (or a second power source), and / or receiving power P from one or more other power sources. 夹持 P 内1 P 内2 P 外 Tuning circuits 502, 504, 505, and 506 can be used to adjust the voltage drop across the plasma. Figure 6 Examples of tuning circuits 502, 504, 505, and 506 are shown. Figure 6 As shown, tuning circuits 502, 504, 505, and 506 may include one or more of the impedances. Tuning circuits 502, 504, 505, and 506 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in tuning circuits 502, 504, 505, and 506 are shown in [the diagram / illustration]. Figure 7-11 The impedance can be connected in series or parallel, can be a shunt reactance, and / or can include capacitors, inductors, resistors, reactances, transmission lines, short-circuited or open-circuited circuits, filtering components, and / or other impedances. For example, the clamping electrode 507 and bias electrodes 508, 509 can be circular, while the external bias electrode 510 can be annular.

[0102] Figure 6A tuning circuit 600 is shown for electrode (or load) 602 (e.g., clamping electrode or bias electrode). The tuning circuit 600 can replace... Figure 2-5 The tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506. In Figure 9-10 An example of a tuning circuit 600 is shown. The tuning circuit 600 can draw power from an RF power supply 604 (e.g., Figure 1 The RF power supply 604 receives RF power from one of the power supplies 129 and 135. The RF power supply 604 may include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. The tuning circuit 600 may include a series impedance path 605 and a series impedance group 606, and a parallel impedance path 607 and a parallel impedance group 608. The impedances of impedance groups 606 and 608 may be frequency-dependent. The series impedance group 606 includes one or more impedances 609 connected in series between the RF power supply 604 and the load 602. The series impedance group 606 and one or more impedances 609 are connected between the load 602 and the source terminal 610. The source terminal 610 is connected to the RF power supply 604. The parallel impedance group 608 is connected between (i) the source terminal 610 connected between the RF power supply 604 and the series impedance group 606, and (ii) a reference terminal or ground 612. The parallel impedance group 608 may include one or more impedances 613 connected in parallel between the source terminal 610 and the reference terminal 612.

[0103] One or more of impedances 609 and 613 may be fixed impedances. Additionally or alternatively, one or more of impedances 609 and 613 may be variable impedances, which can be controlled by... Figure 1 The system controller 121 is adjusted based on, for example, the following: current processing recipe; current operating parameters; measured parameters; and / or based on one or more sensors (such as...). Figure 1 The parameters determined by the output of sensor 143; and / or the characteristics and / or properties of the processing system, ESC, and substrate.

[0104] Although in the following Figure 7-11 The diagram shows some impedances, but may include others. Impedances may include “stray” inductance from wires and / or other conductive circuit components.

[0105] Figure 7 The diagram shows a tuning circuit 700 that can be connected to a single RF power supply 702. The tuning circuit 700 includes inductors L1-L3 and capacitors C1-C3 connected in series for two clamping electrodes 706, 708 and a bias electrode ring 710. The impedances of the inductors L1-L3 and capacitors C1-C3 are frequency-dependent. The RF power supply 702 can be similar to... Figure 1The power supply 702 operates in the manner of power supplies 129 and 135 and can be connected to a reference terminal or ground 711. RF power supply 702 may include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. In one embodiment (referred to as the grounding platform configuration), RF power supply 702 is not included, and capacitors C1-C3 are connected to ground 711.

[0106] exist Figure 7 The diagram shows a cross-sectional view of multiple electrodes 706, 708, and 710. These electrodes 706, 708, and 710 can be concentrically arranged. L1 and C1 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the first inner clamping electrode 706. L2 and C2 are connected in series between (i) the RF power supply 702 and the common (or source) terminal 712 and (ii) the central terminal 714, which is connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power supply 702 and the common terminal 712 and (ii) the second inner clamping electrode 708.

[0107] Inductors L1-L3 and capacitors C1-C3 can have fixed values ​​or can be composed of the values ​​described above. Figure 1 The system controller 121 controls the variable device. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be included in the tuning circuit 700.

[0108] Figure 7 An example is provided where power is supplied to a common node (or terminal) and shunted to supply power to multiple electrodes. The impedance of each path for each electrode can be varied by the impedance in the corresponding path (or by inductors and capacitors connected in series).

[0109] Figure 8 The diagram shows that the tuning circuit 800 can be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1-L3 and shunt capacitors C1-C3 for two clamping electrodes 804, 806 and a bias electrode ring 808. The impedances of the shunt inductors L1-L3 and shunt capacitors C1-C3 are frequency-dependent. The RF power supply 802 can be similar to... Figure 1 The power supply 802 operates in the manner of power supplies 129 and 135 and can be connected to a reference terminal or ground 811. RF power supply 802 may include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. RF power supply 802 is connected to a common (or source) terminal 812, which is connected to clamping electrodes 804 and 806 and to a central terminal 814.

[0110] In one embodiment (referred to as the grounding platform configuration), the RF power supply 802 is not included, and terminal 812 is connected to ground 811. When terminal 812 is connected to ground 811, one or more series-connected impedances may be connected between (i) node 820 and ground 811, (ii) node 822 and ground 811, and / or node 824 and ground 811. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This can occur, for example, when RF power is supplied to the corresponding nozzle.

[0111] Cross-sectional views of electrodes 804, 806, and 808 are shown. Electrodes 804, 806, and 808 can be arranged concentrically. L1 and C1 are connected in parallel between node (or first terminal) 820 and ground 811. First terminal 820 is connected between common terminal 812 and first clamping electrode 804. L2 and C2 are connected in parallel between node (or second terminal) 822 and ground 811. Second terminal 822 is connected between common terminal 812 and first clamping electrode 804. L3 and C3 are connected in parallel between node (or third terminal) 824 and ground 811. Third terminal 824 is connected between common terminal 812 and second clamping electrode 806.

[0112] Inductors L1-L3 and capacitors C1-C3 can have any and / or predetermined fixed values, or they can be determined as described above. Figure 1 The system controller 121 controls the variable device. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be included in the tuning circuit 800.

[0113] Figure 8 This provides a way to supply power to a common node and shunt it to power multiple electrodes. The impedance of each path for each electrode can be varied by the shunt impedance (or shunt inductor and capacitor) connected to the corresponding path.

[0114] Figure 9 A tuning circuit 900 connected to dual RF power supplies 902, 904 is shown. The tuning circuit 900 includes inductors L1-L3 and capacitors C1-C3 connected in series for two clamping electrodes 906, 908 and a bias electrode ring 910, as well as shunt inductors L4-L6 and capacitors C4-C6. The impedance of inductors L1-L6 and capacitors C1-C6 is frequency-dependent. RF power supplies 902, 904 can operate at similar frequencies. Figure 1The power supplies 129 and 135 operate in a manner that allows them to be connected to a reference terminal or ground 911. RF power supplies 902 and 904 may include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. RF power supplies 902 and 904 are connected to a common (or source) terminal 912 and can provide power at the same or different frequencies.

[0115] In one embodiment (referred to as the grounding platform configuration), RF power supplies 902 and 904 are not included, and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series-connected impedances may be connected between (i) node 920 and ground 911, (ii) node 922 and ground 911, and / or node 924 and ground 911. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This can occur, for example, when RF power is supplied to the corresponding nozzle.

[0116] Inductor L1 and capacitor C1 are connected in series between common terminal 912 and first clamping electrode 906, and inductor L2 and capacitor C2 are connected in series between central terminal 914 and common terminal 912. Central terminal is connected to two points on bias electrode ring 910.

[0117] Cross-sectional views of multiple electrodes 906, 908, and 910 are shown. These electrodes 906, 908, and 910 can be arranged concentrically. L4 and C4 are connected in parallel between node (or first terminal) 920 and ground 911. First terminal 920 is connected between capacitor C1 and common terminal 912. L5 and C5 are connected in parallel between node (or second terminal) 922 and ground 911. Second terminal 922 is connected between capacitor C2 and common terminal 912. L6 and C6 are connected in parallel between node (or third terminal) 924 and ground 911. Third terminal 924 is connected between capacitor C3 and common terminal 912.

[0118] Inductors L1-L6 and capacitors C1-C6 may have any and / or predetermined fixed values, or may be as described above. Figure 1 The system controller 121 controls the variable device. Although inductors L1-L6 and capacitors C1-C6 are shown, the tuning circuit 900 may include other impedances. L4-L6 and C4-C6 can be any network that may not include inductors and / or capacitors.

[0119] Figure 10Two tuning circuits 1000 and 1002 are shown, which can be connected to corresponding RF power supplies 1004 and 1006. The first tuning circuit 1000 includes inductors L1 and L3 connected in series with capacitors C1 and C3 for the two clamping electrodes 1010 and 1012, and shunt inductors L4 and L6 connected in series with capacitors C4 and C6. The impedance of inductors L1-L6 and capacitors C1-C6 is frequency-dependent. The second tuning circuit 1002 includes inductor L2 connected in series with capacitor C2 for biasing electrode ring 1014, and shunt inductor L5 connected in series with capacitor C5. RF power supplies 1004 and 1006 can be similar. Figure 1 The power supplies 129 and 135 operate in a manner that allows them to be connected to a reference terminal or ground 1016. RF power supplies 1004 and 1006 may include a matching network and / or an RF generator, such as matching network 129 and RF generator 125. RF power supply 1004 is connected to a common (or source) terminal 1018, which is connected to C1, C3, C4, C6, L4, and L6. RF power supply 1006 is connected to a central terminal 1020 via C2 and L2. RF power supplies 1004 and 1006 can provide power at the same or different frequencies.

[0120] Inductor L1 and capacitor C1 are connected in series between common terminal 1018 and first clamping electrode 1010. Inductor L2 and capacitor C2 are connected in series between central terminal 1020 and RF power supply 1006. Central terminal 1020 is connected to two points on bias electrode ring 1014.

[0121] Cross-sectional views of multiple electrodes 1010, 1012, and 1014 are shown. Electrodes 1010, 1012, and 1014 can be arranged concentrically. L4 and C4 are connected in parallel between the first terminal 1030 and ground 1016. The first terminal 1030 is connected between capacitor C1 and common terminal 1018. L5 and C5 are connected in parallel between the second terminal 1032 and ground 1016. The second terminal 1032 is connected between capacitor C2 and common terminal 1018. L6 and C6 are connected in parallel between the third terminal 1034 and ground 1016. The third terminal 1034 is connected between capacitor C3 and common terminal 1018.

[0122] Inductors L1-L6 and capacitors C1-C6 may have any and / or predetermined fixed values, or may be as described above. Figure 1 The system controller 121 controls the variable device. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be included in the tuning circuit 1000. L4-L6 and C4-C6 can be any network that may not include inductors and / or capacitors.

[0123] In one embodiment, RF power supply 1004 is not included, and terminal 1018 is connected to ground 1016. In another embodiment, RF power supply 1006 is not included, and terminal 1032 is connected to ground 1016. In yet another embodiment, neither RF power supply 1004 nor 1006 is included, and both terminals 1018 and 1032 are connected to ground 1016. When terminals 1018 and / or 1032 are connected to ground 1016, one or more series-connected impedances may be connected between (i) node 1030 and ground 1016, (ii) node 1034 and ground 1016, and / or node 1032 and ground 1016. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is supplied to a corresponding nozzle.

[0124] Figure 11 A tuning circuit 1100 is shown, comprising capacitors C1 and C2 and inductors L1 and L2 connected in parallel for two clamping electrodes 1102 and 1104 and a bias electrode ring 1106. The impedances of capacitors C1-C2 and inductors L1-L2 are frequency-dependent. Electrodes 1102, 1104, and 1106 may be concentrically arranged. Capacitors C1 and C2 are connected in series between (i) clamping electrodes 1102 and 1104 and (ii) power terminals 1110 and 1112. Inductors L1 and L2 are connected in parallel with capacitors C1 and C2 and in series between (i) clamping electrodes 1102 and 1104 and (ii) power terminals 1110 and 1112, respectively. Central terminals 1114 and 1116 are connected between capacitors C1 and C2 and between inductors L1 and L2, respectively. Central terminals 1114 and 1116 are connected to both: (i) two points on the bias electrode ring 1106, and (ii) a third (or central) power terminal 1118. Power terminals 1110 and 1112 are connected to clamping electrodes 1102 and 1104, respectively. Power terminals 1110, 1112, and 1118 may be connected to their respective power supplies, such as any power supply disclosed herein. In one embodiment, one or more of power terminals 1110, 1112, and 1118 are not connected to an RF power supply but are connected to a reference terminal or ground.

[0125] Inductors L1-L2 and capacitors C1-C2 can have any and / or predetermined fixed values, or can be composed of the values ​​described above. Figure 1 The system controller 121 controls the variable device. Although inductors L1-L2 and capacitors C1-C2 are shown, other impedances may be included in the tuning circuit 1100. Inductors L1-L2 and capacitors C1-C2 are coupling components connected between electrodes, providing power at multiple frequencies to each electrode.

[0126] Tuning circuit 1100 can be with Figure 3 , 5 And can be used with any of the circuits shown in 7-10. For example, capacitors C1 and C2 and inductors L1 and L2 can be connected similarly: Figure 3 Electrodes 306, 307 and electrode ring 308; Figure 5 Electrodes 508, 509 and electrode ring 510; Figure 7 Electrodes 706, 708 and electrode ring 710; Figure 8 Electrodes 804, 806 and electrode ring 808; Figure 9 Electrodes 906, 908 and electrode ring 910; and Figure 10 Electrodes 1010, 1012 and electrode ring 1014.

[0127] exist Figure 2-11 In the above examples, if power at multiple frequencies is provided, the path to a specific electrode may include frequency-dependent filtering components to provide power at that specific frequency to that electrode. The aforementioned impedance may also include frequency-dependent filtering components. Furthermore, power provided to different electrodes can be provided by separate (or different) power supplies operating at the same or different frequencies, so that the power supplied by the power supplies has the same or different frequencies. Figure 9-10 An example containing multiple power supplies is shown. Alternatively, one or more of the power supplies may be omitted, and the corresponding terminals (such as terminals 912, 1018, 1032) may be connected to a reference terminal or ground.

[0128] Figure 12 An example of an operation method for a substrate processing system is shown, which includes setting and adjusting the capacitance and inductance values ​​of a tuning circuit for electrodes of an electrostatic chuck. In one embodiment, when one or more frequencies are adjusted to tune the entire ESC (e.g., Figure 1 During spatial power distribution in the ESC 101, the capacitors and inductors of the tuning circuit are maintained at fixed values. Spatial power distribution refers to the distribution of power throughout the ESC. This distribution can include lateral, radial, axial, vertical, azimuth, and other directional distributions. While the following operations primarily target… Figure 1-11 The implementation scheme is described, but the operation can be easily modified for application to other embodiments of the invention. The operation is repeatable. The operation can be performed, for example, by... Figure 1 The system controller 121 and / or frequency controller execute.

[0129] The method may begin at 1200. At 1202, the process to be performed is selected. Exemplary processes are cleaning, etching, deposition, annealing, etc. At 1204, a formula including system operating parameters is determined for the selected process. Exemplary system operating parameters are: gas pressure and flow rate; temperature of the processing chamber, ESC, and substrate; center frequency of the RF signal output from the RF generator and the corresponding frequency operating range; total power of each group of one or more electrodes in each of the multiple regions of electrodes supplied; RF bias voltage; clamping voltage; electrode voltage, current level, power level, and / or frequency, etc. For example, the frequency operating range may differ from the center frequency by ±5% or more. For example, the RF generator may have a center frequency of 13.56 MHz and the frequency of the RF signal output from the RF generator during processing may be adjusted to between 12.882 MHz and 14.238 MHz. For example, the RF generator may have a center frequency of 20 MHz and the frequency of the RF signal output from the RF generator during processing may be adjusted to between 18 MHz and 22 MHz. The frequency adjustment is not for impedance matching to minimize reflected power, but rather is performed during processing, such as after plasma excitation, to adjust the power distribution in the ESC.

[0130] At 1206, the characteristics and / or properties of the processing chamber, ESC, and substrate are defined. Exemplary characteristics and properties include the processing chamber geometry, the composition of the ESC, the heating and cooling characteristics of the ESC (e.g., heating and cooling rates), the dimensions of the ESC, the composition of the substrate, and the materials of the ESC and / or the substrate. This may also include: the number of electrodes in each region: the number of clamping electrodes, RF electrodes, and / or combinations of clamping electrodes and RF electrodes. Some electrodes in ESC 101 can be used for both clamping and RF biasing purposes, and therefore both clamping voltage and RF bias voltage can be provided.

[0131] At 1208, system controller 121 and / or frequency controller 119 can set system operating parameters. This may include controlling the operation of the aforementioned actuators. At 1210, the impedance value of the tuning circuit is set based on the selected process, recipe, and system operating parameters. The impedance value may also be set based on the characteristics and / or properties of the processing chamber, ESC, and / or substrate, or alternatively, the impedance value may be set based on the characteristics and / or properties of the processing chamber, ESC, and / or substrate. For example, a lookup table may be stored in and / or accessed by system controller 121's memory to associate the impedance value with the other parameters, characteristics, and / or properties mentioned above. As described above, system controller 121 may also set the impedance 128 of the second RF matching network 129.

[0132] At 1212, the substrate can be placed on the ESC. This may include providing a clamping voltage to clamp the substrate to the ESC. At 1214, processing operations are performed. Exemplary processing operations are cleaning operations, gas flow, plasma flow and excitation, etching operations, deposition operations, annealing operations, post-annealing operations, cleaning the processing chamber, etc.

[0133] Operations 1216, 1218, 1220, and 1222 can be performed while operation 1212 is being performed. At 1216, the sensor output signal is monitored, and the sensor output signal contains sensor output data from the substrate processing system. This may include data from... Figure 1 Sensors 143, 144, and 145 receive signals.

[0134] At 1218, parameters can be determined based on sensor output signals, data, and / or corresponding measurements from sensors 143, 144, 145, and / or other sensors, such as temperature, gas pressure, frequency, voltage, current level, power level, etc., of the RF signal generated by the RF generator. The frequency can be adjusted when the same amount of total power is applied to the RF and / or clamping electrodes. For example, and referring to... Figure 7 The RF power supply 702 can provide RF signals of a specific frequency to electrodes 706, 708, and 710 through L1-L3 and C1-C3.

[0135] The power distribution to electrodes 706, 708, and 710 depends on the frequency and the impedance values ​​of L1-L3 and C1-C3. The frequency of the RF signal can be adjusted to adjust the power distribution. By adjusting the frequency, the effective impedance of L1-L3 and C1-C3 changes. The inductance and capacitance values ​​of L1-L3 and C1-C3 can be fixed or adjustable to adjust the power distribution. The amount of power distributed to electrodes 706, 708, and 710 can be the same or different, depending on the frequency of the RF signal and the impedance values ​​of L1-L3 and C1-C3. In one embodiment, when the frequency and / or impedance, inductance, and / or capacitance values ​​of the RF signal supplied to the tuning circuit are changed, the total amount of power supplied to electrodes 706, 708, and 710 remains at a fixed level.

[0136] At 1220, system controller 121 and / or frequency controller 119 may determine, based on measured values ​​and / or determined parameters, whether to adjust the frequency of the RF generated signal, the impedance value of the tuning circuit, and / or the capacitance and inductance values ​​of the tuning circuit. In one embodiment, a target impedance value is determined, and then the frequency is set based on the target impedance value. The capacitance and inductance values ​​of the capacitors and inductors of the tuning circuit may be adjusted based on the target impedance value and the set frequency. These determinations may be based on selected processes, formulations, system operating parameters and / or characteristics and / or properties of the processing chamber, ESC, and / or substrate. Characteristics may change dynamically. In one embodiment, the impedance value is adjusted based on changes in characteristics to follow a predetermined trajectory. The predetermined trajectory may be, for example, a curve stored in memory. Tables may be stored in memory to correlate impedance values ​​with other values ​​and parameters. If one or more impedance values ​​are to be changed, operation 1222 is performed; otherwise, operation 1216 is performed. In one embodiment, the power supplied to one or more electrodes is modulated by changing the value of the corresponding impedance. This can alter stress, thickness, uniformity, refractive index, etch rate, deposition rate, and / or other inherent values ​​and / or profile parameters of the substrate.

[0137] At 1222, system controller 121 adjusts one or more impedance values ​​of the tuning circuit, for example, by changing the inductance, capacitance, impedance, and / or resistance of one or more capacitors or inductors of the tuning circuit. The adjustment (or adjustment amount) may be based on measured and / or determined parameters, selected processes, recipes, system operating parameters, and / or processing chambers, ESC, and / or substrate characteristics and / or properties. System controller 121 may also adjust the impedance 128 of the second RF matching network 129 as described above. After operation 1222, operation 1216 can be performed.

[0138] At 1224, system controller 121 determines whether to modify the current process or perform another process. If the current process needs to be modified or another process needs to be performed, operation 1202 can be performed. If the current process is not modified and no further processing is expected, the process can end at 1226.

[0139] The above operations are exemplary examples. Depending on the application, the operations may be performed sequentially, synchronously, simultaneously, consecutively, within overlapping time periods, or in a different order. Additionally, depending on the progress and / or order of events, any operation may be omitted or skipped.

[0140] Figure 13 An example of a substrate support 1300 is shown, which includes an outer ring electrode 1302 and two inner electrodes 1304, 1306. For example... Figure 3 , 5As shown in Figures 7-11, electrodes 1302, 1304, and 1306 are provided as examples of two inner electrodes and an outer ring electrode. The inner electrodes 1304 and 1306 may be D-shaped electrodes and radially inwardly disposed towards the outer ring electrode 1302. Gap 1308 and 1310 exist between the inner electrodes 1304 and 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linear central member 1312 extending between the inner electrodes 1304 and 1306. Gap 1314 and 1316 may exist between the inner electrodes 1304 and 1306 and the central member 1312. The central member 1312 extends between the inner electrodes 1304 and 1306 and passes through the middle region 1320 of the outer ring 1311 to evenly divide the middle region 1320. In one embodiment, power is provided to the outer ring electrode 1302 at the center of the central member 1312. Power can be supplied to portions of the inner electrodes 1304 and 1306 near the center of the central component 1312.

[0141] The above examples provide RF tuning systems for indirectly and directly adjusting the impedance of a tuning circuit to change the power distribution to the electrodes in the ESC. Frequency adjustments at the RF generator can be used to quickly and significantly alter the power distribution, thereby affecting processing results on the wafer. The RF tuning system can modulate the power of the electrodes via frequency adjustments and / or direct physical adjustments of the impedance of the tuning circuit. Using a combination of frequency adjustments and direct impedance adjustments can increase the tuning range and / or improve tuning accuracy. The tuning circuit has impedance for setting and adjusting parameters of the electrodes in the electrostatic chuck and / or other pedestals (or substrate supports). The pedestal may not be an electrostatic chuck. This provides spatial tuning of the power of the plasma delivered to the processing chamber (such as a PECVD reactor). The examples provide new control parameters for film deposition and uniformity. As an example including an outer annular electrode and an inner circular electrode, the relative density of the plasma near the outer periphery of the substrate can be changed by modulating the power supplied to the electrodes. As described above, this can be accomplished by modulating (or adjusting) the corresponding impedance. Unlike altering gas parameters or overall power, modulating the power supplied to the electrodes does not necessarily change global parameters affecting the entire substrate. This allows for modification of selected regions of the film on the substrate (such as the circumferential edge of the film). This differs from conventional techniques that involve using metal or dielectric rings to alter the plasma's external environment, which would result in gas flow changes and thus global effects, altering the film beyond its circumferential edge.

[0142] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0143] Various terms are used to describe spatial and functional relationships between components (e.g., between modules, between circuit components, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second components is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate components exist between the first and second components, but it can also be an indirect relationship, where one or more intermediate components exist between the first and second components (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0144] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing apparatus, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer tools and other transfer tools, and / or loading locks connected to or interfaced with a specific system.

[0145] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing specific processes on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silica, surfaces, circuits, and / or wafer dies.

[0146] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide processing recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the processing and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a room that communicate with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control processing on the room.

[0147] Example systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing systems that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0148] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. A substrate processing system, comprising: A matching network is configured to receive a first radio frequency (RF) signal with a first frequency from an RF generator and to impedance match the input of the matching network with the output of the RF generator, wherein the matching network is configured to operate in a frequency range in which impedance mismatch does not occur between the RF generator and the matching network. At least one tuning circuit, different from the matching network, is configured to receive the output of the matching network and output at least one radio frequency signal to at least one electrode in the substrate support; and A controller configured to send a signal to the radio frequency generator to adjust a first frequency of a first radio frequency signal within the frequency range to a second frequency, thereby changing at least one impedance of the at least one tuning circuit.

2. The substrate processing system according to claim 1, wherein: The at least one tuning circuit includes a first tuning circuit and a second tuning circuit. The first tuning circuit is connected to the first electrode in the substrate support; The second tuning circuit is connected to the second electrode in the substrate support; The at least one electrode includes the first electrode and the second electrode; and The controller is configured to send a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal in the frequency range to a second frequency, thereby changing the first impedance of the first tuning circuit and the second impedance of the second tuning circuit.

3. The substrate processing system according to claim 1, further comprising: The radio frequency generator has a center frequency and is configured to generate a first radio frequency signal having the first frequency based on a control signal, wherein: The controller is configured to generate the control signal; and The first frequency is within a predetermined range of the center frequency.

4. The substrate processing system of claim 1, wherein the matching network does not change the first frequency of the first radio frequency signal and provides the first radio frequency signal to the at least one tuning circuit.

5. The substrate processing system of claim 1, wherein the controller is configured to adjust the first frequency to the second frequency independently of impedance matching between the input of the matching network and the output of the RF generator.

6. The substrate processing system according to claim 1, wherein, The controller is configured to adjust the first frequency to the second frequency without affecting the impedance matching between the matching network and the RF generator.

7. The substrate processing system according to claim 1, wherein, The matching network is configured to maintain impedance matching between the input of the matching network and the output of the RF generator when the controller adjusts the first frequency to the second frequency.

8. The substrate processing system according to claim 1, wherein: The at least one tuning circuit includes a first circuit component and a second circuit component; The first circuit component is connected to the first electrode in the substrate support; The second circuit component is connected to the second electrode in the substrate support; The at least one electrode includes the first electrode and the second electrode; and The controller is configured to adjust the first frequency to the second frequency to adjust the impedance of the first circuit component and the impedance of the second circuit component, thereby changing the power distribution from the at least one tuning circuit to the first electrode and the second electrode.

9. The substrate processing system according to claim 1, wherein: The at least one tuning circuit is configured to output a third radio frequency signal to a first electrode in the substrate support and a fourth radio frequency signal to a second electrode in the substrate support based on the output of the matching network. as well as The controller is configured to adjust the power distribution of the first electrode and the second electrode within the substrate support by sending a signal to the radio frequency generator to adjust the first frequency to the second frequency.

10. The substrate processing system according to claim 1, wherein, The at least one tuning circuit includes at least one of a clamping tuning circuit and a radio frequency tuning circuit.

11. The substrate processing system according to claim 1, wherein, The at least one tuning circuit includes a plurality of clamping tuning circuits.

12. The substrate processing system according to claim 1, wherein, The at least one tuning circuit includes multiple radio frequency tuning circuits.

13. The substrate processing system according to claim 1, wherein, The at least one tuning circuit includes a series impedance group and a parallel impedance group.

14. The substrate processing system according to claim 13, wherein: The series impedance group includes multiple impedances connected in series between the radio frequency power supply and the at least one electrode; and The parallel impedance group includes multiple impedances connected in parallel between the ground reference and the series impedance group.

15. The substrate processing system according to claim 1, wherein: The at least one electrode includes a plurality of electrodes; and The at least one tuning circuit includes multiple series impedance groups for receiving power from an RF power source and supplying power to the multiple electrodes.

16. The substrate processing system according to claim 1, wherein: The at least one electrode includes multiple electrodes; The at least one tuning circuit includes multiple parallel impedance groups; and The plurality of parallel impedance groups include an input terminal connected to the power supply and the plurality of electrodes, and an output terminal connected to a ground reference.

17. The substrate processing system according to claim 1, wherein: The at least one electrode includes a plurality of electrodes; and The at least one tuning circuit includes Multiple parallel impedance groups, each parallel impedance group including an input terminal connected to at least one power supply and an output terminal connected to a ground reference; as well as Multiple series impedance groups receive power from at least one radio frequency power source and supply power to the multiple electrodes.

18. The substrate processing system according to claim 17, wherein: The at least one radio frequency power source includes a first power source and a second power source; and The first power source and the second power source each supply power to each of the plurality of parallel impedance groups and the plurality of series impedance groups.

19. The substrate processing system according to claim 17, wherein: The at least one radio frequency power supply includes a first power supply and a second power supply; The plurality of parallel impedance groups include a first parallel impedance group, a second parallel impedance group, and a third parallel impedance group; The plurality of series impedance groups include a first series impedance group, a second series impedance group, and a third series impedance group; The first parallel impedance group, the third parallel impedance group, the first series impedance group, and the third series impedance group receive power from the first power source; and The second parallel impedance group and the second series impedance group receive power from the second power source.

20. The substrate processing system according to claim 1, wherein: The at least one electrode includes a first electrode, a second electrode, and a third electrode; and The at least one tuning circuit includes: A first impedance, the first end of which is connected to the first electrode and the first terminal, and the second end of which is connected to the second terminal and the third electrode; The second impedance has a first end connected to the first electrode and the first terminal, and a second end connected to the second terminal and the third electrode. The third impedance has its first end connected to the second terminal and the third electrode, and its second end connected to the second electrode and the third terminal; and The fourth impedance has its first end connected to the second terminal and the third electrode, and its second end connected to the second electrode and the third terminal.

21. The substrate processing system according to claim 20, wherein, The first terminal, the second terminal, and the third terminal are each connected to their respective power sources.

22. The substrate processing system according to claim 20, wherein, One or more of the first terminal, the second terminal, and the third terminal are connected to one or more power sources, and another one or more of the first terminal, the second terminal, and the third terminal are connected to a reference terminal or ground.

23. The substrate processing system according to claim 1, wherein, The at least one electrode includes: Ring electrode; and Two semi-circular electrodes are arranged radially inward along the annular electrode.

24. The substrate processing system according to claim 1, wherein: The at least one tuning circuit includes at least one circuit component having a first impedance; and The controller is configured to determine the target impedance of the at least one circuit component and, based on the target impedance, send a signal to the radio frequency generator to adjust the first frequency of the first radio frequency signal to the second frequency, thereby changing the first impedance of the at least one circuit component to match the target impedance.

25. The substrate processing system according to claim 24, wherein, The controller is configured to adjust the capacitance or inductance of at least one circuit component in addition to adjusting the first frequency to the second frequency when changing the first impedance to match the target impedance.

26. The substrate processing system according to claim 24, wherein, The controller is configured to maintain at least one of the capacitance or inductance of the at least one circuit component at a fixed value while adjusting the first impedance.

27. The substrate processing system according to claim 24, wherein: The at least one circuit component includes a first circuit component and a second circuit component; The at least one tuning circuit distributes the total power received from the matching network to the first circuit component and the second circuit component; and The controller is configured to adjust the first frequency to the second frequency to adjust a first portion of the total power supplied to the first circuit component and a second portion of the total power supplied to the second circuit component.

28. The substrate processing system of claim 24, further comprising: Source terminal; as well as The substrate support includes a first electrode and a second electrode, wherein at least one electrode includes both the first electrode and the second electrode, and wherein the first electrode and the second electrode receive power from the matching network via the source terminal. The at least one tuning circuit includes at least one of the following: A first impedance group is connected in series between the first electrode and the matching network, wherein the first impedance group receives a second radio frequency signal from the matching network via the source terminal, wherein at least one radio frequency signal includes the second radio frequency signal; or A second impedance group is connected between the output of the matching network and the reference terminal, wherein the second impedance group receives the second radio frequency signal from the matching network via the source terminal.

29. The substrate processing system according to claim 28, wherein: The at least one tuning circuit includes a first tuning circuit, a second tuning circuit, a third tuning circuit, and a third electrode; The first tuning circuit is connected to the first electrode to modify the output of the matching network, thereby generating the second radio frequency signal; The second tuning circuit is connected to the second electrode and is configured to modify the output of the matching network to generate a third radio frequency signal provided to the second electrode, wherein the at least one radio frequency signal includes the third radio frequency signal; and The third tuning circuit is connected to the third electrode and is configured to modify the output of the matching network to generate a fourth radio frequency signal provided to the third electrode.

30. The substrate processing system according to claim 24, wherein: The at least one circuit component is connected to the first and second electrodes in the substrate support and affects the power distribution between the first and second electrodes; and The at least one electrode includes the first electrode and the second electrode.

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