Sealing film and method for manufacturing same, and electronic component device and method for manufacturing same

Abstract

Disclosed is a method for manufacturing a sealing film for sealing an electronic component, the sealing film comprising: a support body; and a thermosetting resin layer that is provided on the support and contains a thermosetting resin composition. This method for producing a sealing film comprises: a step in which a resin varnish containing a thermosetting resin composition and an organic solvent is applied to a support body in a coating manner in which the support body is moved by a roller provided on the rear surface side of the support body; and a step in which at least a portion of the organic solvent is removed from the applied resin varnish, and a thermosetting resin layer is formed on the support. The thickness of the support body is 45 [mu] m or more. And the thickness of the thermosetting resin layer is 1-100 [mu] m.

Description

Technical Field

[0001] This invention relates to a sealing film and its manufacturing method, as well as electronic component devices and their manufacturing methods. Background Technology

[0002] Typically, electronic components (e.g., semiconductor wafers) are sealed using solid or liquid resin compositions (sealing materials) formed by molding. For example, Patent Document 1 proposes using a sealing film (film-like resin composition) to resin seal multiple electronic components mounted on a substrate.

[0003] Previous technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2004-327623 Summary of the Invention

[0006] The technical problem to be solved by the invention

[0007] In recent years, with the miniaturization and thinning of electronic devices, the miniaturization and thinning of semiconductor devices have progressed, and sealing films are also required to be thinner.

[0008] The sealing film can be manufactured, for example, by a method comprising the steps of: preparing a resin varnish by dissolving or dispersing a thermosetting resin composition in an organic solvent, and applying the resin varnish onto a support; and removing at least a portion of the organic solvent from the applied resin varnish to form a thermosetting resin layer. According to the researchers of the present invention, in such a manufacturing method, if the thermosetting resin layer is thinned (e.g., 100 μm or less), recesses that do not meet the specified thickness are sometimes locally formed on the surface of the thermosetting resin layer opposite to the support (the sealing surface facing the electronic component when sealing the electronic component). When a sealing film having such a thermosetting resin layer is used for resin sealing of an electronic component, by pressing under heating of the support when embedding the electronic component in the thermosetting resin layer, a portion of the thermosetting resin layer corresponding to the volume of the recess is pressed in, thereby sometimes creating a depression at a location corresponding to the recess on the surface of the sealed molded object after sealing (the surface opposite to the sealing surface of the thermosetting resin layer). If multiple such depressions exist on the sealing material, it is determined that the sealing material is not sealing properly. Therefore, when manufacturing a sealing film, it is required to suppress the formation of depressions on the surface of the thermosetting resin layer (sealing surface).

[0009] The main objective of this invention is to provide a method for manufacturing a sealing film for sealing electronic components, which can reduce poor sealing in the sealed molded product.

[0010] means for solving technical problems

[0011] The inventors conducted a detailed study on the causes of the recesses and discovered that in a coating method where the support is moved by a roller (sometimes called a back roller, coating roller, etc.) located on the back side of the support (the side opposite to the coating surface with the resin varnish), foreign matter present on the roller causes the gap between the coated portion and the support to locally decrease, thereby forming a recess on the surface (sealing surface) of the thermosetting resin layer. Further research by the inventors revealed that, in addition to removing foreign matter, even when foreign matter is present on the roller, if the thickness of the support is within a certain range, it is possible to mitigate the fine irregularities originating from the foreign matter, and in the sealed molded product after sealing, the depressions originating from the recesses can be reduced, thus completing the invention of the present invention.

[0012] The present invention provides a method for manufacturing the sealing film described in [1] to [4], a method for manufacturing the electronic component device described in [5], the sealing film described in [6], and the electronic component device described in [7].

[0013] [1] A method for manufacturing a sealing film, the sealing film being used to seal electronic components, the sealing film comprising: a support body; and a thermosetting resin layer disposed on the support body and containing a thermosetting resin composition, the method comprising: a step of coating a resin varnish containing the thermosetting resin composition and an organic solvent onto the support body by moving the support body through a roller disposed on the back side of the support body; and a step of removing at least a portion of the organic solvent from the coated resin varnish and forming the thermosetting resin layer on the support body, wherein the thickness of the support body is 45 μm or more, and the thickness of the thermosetting resin layer is 1 to 100 μm.

[0014] [2] According to the method for manufacturing the sealing film described in [1], wherein,

[0015] The support is a polyester film or a polyimide film.

[0016] [3] The method for manufacturing the sealing film according to [1] or [2], wherein,

[0017] The thermosetting resin composition contains epoxy resin and a curing agent.

[0018] [4] According to the method for manufacturing the sealing film described in [3], wherein,

[0019] At least one of the epoxy resin and the curing agent contains a liquid component that is liquid at 25°C, and the total content of the liquid component is 30-80% by mass, based on the total amount of the epoxy resin and the curing agent.

[0020] [5] A method for manufacturing an electronic component device, comprising:

[0021] The process of embedding an electronic component in the thermosetting resin layer of a sealing film obtained by the manufacturing method of the sealing film according to any one of [1] to [4]; and the process of curing the thermosetting resin layer to form a sealing portion of the sealing electronic component as a cured product of the thermosetting resin layer.

[0022] [6] A sealing film for sealing electronic components, the sealing film comprising: a support; and a thermosetting resin layer disposed on the support and containing a thermosetting resin composition, wherein the thickness of the support is 45 μm or more, and the thickness of the thermosetting resin layer is 1 to 100 μm.

[0023] [7] An electronic component device comprising an electronic component and a sealing portion for sealing the electronic component, wherein the sealing portion is a cured product of the thermosetting resin layer of the sealing film described in [6].

[0024] Invention Effects

[0025] According to the present invention, a method for manufacturing a sealing film for sealing electronic components is provided, which can reduce sealing defects in the sealed molded article. Furthermore, according to the present invention, a sealing film obtained by such a manufacturing method, an electronic component device using such a sealing film, and a method for manufacturing the same are provided. Attached Figure Description

[0026] Figure 1 This is a schematic cross-sectional view showing one embodiment of the sealing membrane.

[0027] Figure 2 This is a schematic cross-sectional view illustrating one embodiment of a method for manufacturing a semiconductor device. Figure 2 (a) Figure 2 (b) and Figure 2 (c) is a schematic sectional view showing each process.

[0028] Figure 3 This is a schematic cross-sectional view illustrating one embodiment of a method for manufacturing a semiconductor device. Figure 3 (a) Figure 3 (b) Figure 3 (c) Figure 3 (d) and Figure 3 (e) is a schematic sectional view showing each process. Detailed Implementation

[0029] The present invention will now be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, unless specifically stated otherwise, the constituent elements (including steps, etc.) are not essential. The same or equivalent parts are labeled with the same symbols, and repeated descriptions are omitted. Furthermore, regarding positional relationships such as up, down, left, and right, unless otherwise specified, the positional relationships shown in the accompanying drawings are used. The sizes of the constituent elements in each figure are conceptual sizes, and the relative sizes between constituent elements are not limited to the relationships shown in each figure.

[0030] The numerical values ​​and their ranges in this invention are the same and are not intended to limit the invention. In this specification, the numerical range indicated by "~" represents the range encompassed by the values ​​before and after "~" as the minimum and maximum values, respectively. Within the numerical ranges described in stages in this specification, the upper or lower limit value described as a numerical range can be replaced by the upper or lower limit value of other numerical ranges described in stages. Furthermore, within the numerical ranges described in this specification, the upper or lower limit value of the numerical range can be replaced by the values ​​shown in the embodiments. Moreover, the individually described upper and lower limits can be arbitrarily combined.

[0031] In this specification, the term "layer," when viewed from above, includes not only the structure of a shape forming the entire surface but also the structure of a shape forming a portion of it. In this specification, the term "process" is not limited to a single process; even if it cannot be clearly distinguished from other processes, it is included in this terminology as long as the desired effect of the process is achieved.

[0032] In this specification, "(meth)acrylate" refers to at least one of acrylates and their corresponding methacrylates. The same applies to other similar expressions such as "(meth)acryloyl" and "(meth)acrylic acid". Furthermore, "(poly)" refers to both the case with and without the "poly" prefix.

[0033] "A or B" may include either A or B, or both. Furthermore, regarding the materials exemplified below, unless otherwise specified, one type may be used alone, or two or more types may be used in combination. Regarding the content of each component in the composition, in the case where multiple substances corresponding to each component are present in the composition, unless otherwise specified, it refers to the total amount of those multiple substances present in the composition.

[0034] [Sealing film]

[0035] Figure 1This is a schematic cross-sectional view illustrating one embodiment of the sealing film. The sealing film 10 of this embodiment is a sealing film for sealing electronic components (or an embedding film for embedding electronic components), and it includes a support 1 and a thermosetting resin layer 2 disposed on the support 1 and containing a thermosetting resin composition. The main surface of the thermosetting resin layer 2 opposite to the support 1 is the sealing surface 2S facing the electronic component side when sealing the electronic component.

[0036] The support 1 can be a substrate film. Examples of substrate films include polyolefin films such as polyethylene (PE) and polypropylene (PP); polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate; polyvinyl chloride (PVC) films; polyimide (PI) films; polyphenylene sulfide (PPS) films; ethylene vinyl acetate (EVA) films; polytetrafluoroethylene (PTFE) films; and polycarbonate films. The substrate film can be a single-layer structure or a multi-layer structure with two or more layers. Furthermore, the substrate film can undergo a stretching process. Examples of substrate films that have undergone a stretching process include oriented polypropylene (OPP).

[0037] The support 1 (substrate film) can be a rigid film. For example, a rigid film can be a film with a tensile elastic modulus of 1.0 GPa or higher. Examples of such films include polyester films, polyimide films, and polycarbonate films. The support 1 (substrate film) can be, for example, a polyester film or a polyimide film.

[0038] Furthermore, the tensile elastic modulus of support 1 can be determined by the following test method. First, prepare a test piece by cutting support 1 into the shape of a dumbbell-shaped No. 1 test piece as specified in JIS K6251:2010. Draw two parallel standard lines 40 mm apart on the center of the test piece. Determine the tensile elastic modulus by tensile testing at 23°C using a tensile testing machine (e.g., manufactured by A&D Company, Limited, model: RTC-1210) according to the test method specified in JIS K6251:2010.

[0039] More specifically, the test piece is placed in a tensile testing machine and stretched to 100% (i.e., stretched to 80 mm between the two standard lines) at a temperature of 23°C and a tensile speed of 500 mm / min. The stress σ1 (MPa) at strain ε1 = 0.0005 (0.05%) and the stress σ2 (MPa) at strain ε2 = 0.0025 (0.25%) are determined from the stress-strain curve at this time, and the tensile modulus is calculated from the following equation (1).

[0040] Tensile elastic modulus (MPa) = (σ² - σ₁) / (ε² - ε₁) (1)

[0041] In the case where the support is a long strip-shaped resin film, test pieces are made with the length direction of the test piece aligned with the MD direction of the resin film, and test pieces with the length direction of the test piece aligned with the TD direction of the resin film. The tensile elastic modulus is the average of the tensile elastic modulus of the test piece in the MD direction and the tensile elastic modulus of the test piece in the TD direction.

[0042] The support 1 can be subjected to release treatment. A support subjected to release treatment can be obtained, for example, by applying a release agent to the surface of the support and then drying it. Examples of release agents include silicone-based (siloxane-based), fluorinated, and olefin-based release agents.

[0043] The thickness of the support 1 is 45 μm or more, for example, 48 μm or more or 50 μm or more. If the thickness of the support 1 is 45 μm or more, it can mitigate fine unevenness caused by foreign matter and reduce the formation of localized recesses that do not meet the specified thickness. The thickness of the support 1 can be, for example, 200 μm or less, 150 μm or less, 100 μm or less, or 80 μm or less. If the thickness of the support 1 is 200 μm or less, even when using a dryer that blows hot air from both sides of the thermosetting resin layer for drying, there is a tendency to make it difficult to hinder the removal of solvents from the resin varnish. Furthermore, with the thickness of the support 1 within such a range, the sealing film can easily be made into a roller, resulting in excellent handling and operability.

[0044] Thermosetting resin layer 2 contains a thermosetting resin composition. The thermosetting resin composition may, for example, contain epoxy resin and a curing agent. The thermosetting resin composition may further contain, for example, a curing accelerator, an inorganic filler, etc. The thermosetting resin composition is the main component constituting the thermosetting resin layer 2, and based on the total amount of the thermosetting resin layer 2, the content of the thermosetting resin composition may be 90–100% by mass, 95–100% by mass, or 98–100% by mass. The thermosetting resin layer 2 may be formed from the thermosetting resin composition.

[0045] Epoxy resins are not particularly limited and can be compounds having two or more epoxy groups (or glycidyl groups) in one molecule. Examples of epoxy resins include bisphenol A type epoxy resin; bisphenol AP type epoxy resin (1,1-bis(4-hydroxyphenyl)-1-phenylethane diglycidyl ether); bisphenol AF type epoxy resin (2,2-bis(4-hydroxyphenyl)hexafluoropropane diglycidyl ether); bisphenol B type epoxy resin (2,2-bis(4-hydroxyphenyl)butane diglycidyl ether); bisphenol BP type epoxy resin (bis(4-hydroxyphenyl)diphenylmethane diglycidyl ether); and bisphenol C type epoxy resin (2,2-bis(3-methyl) 1,1-bis(4-hydroxyphenyl)propane diglycidyl ether; bisphenol E type epoxy resin (1,1-bis(4-hydroxyphenyl)ethane diglycidyl ether); bisphenol F type epoxy resin; bisphenol G type epoxy resin (2,2-bis(4-hydroxy-3-isopropylphenyl)propane diglycidyl ether); bisphenol M type epoxy resin (1,3-bis[2-(4-hydroxyphenyl)-2-propyl]phenyl diglycidyl ether); bisphenol P type epoxy resin (1,4-bis(2-(4-hydroxyphenyl)-2-propyl)phenyl diglycidyl ether); bisphenol A type epoxy resin (1,3-bis[2-(4-hydroxyphenyl)-2-propyl]phenyl diglycidyl ether); bisphenol B type epoxy resin (1,4-bis(2-(4-hydroxyphenyl)-2-propyl)phenyl diglycidyl ether); bisphenol A type epoxy resin (1,3-bis[2-(4-hydroxyphenyl)-2-propyl]phenyl diglycidyl ether); bisphenol B type epoxy resin (1,3-bis[2-(4-hydroxyphenyl)-2-propyl] ... Phenolic PH type epoxy resin (5,5'-(1-methylethylidene)-bis)[1,1'-(bisphenol)-2-ol]propane diglycidyl ether; bisphenol TMC type epoxy resin (1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane diglycidyl ether); bisphenol Z type epoxy resin (1,1-bis(4-hydroxyphenyl)cyclohexane diglycidyl ether); hexanediol bisphenol S diglycidyl ether and other bisphenol S type epoxy resins; phenolic varnish type epoxy resins and other phenolic varnish type epoxy resins (phenolic varnish type epoxy resins). Epoxy resins include: paint-type epoxy resins, biphenyl-type epoxy resins, biphenyl aralkyl-type epoxy resins, naphthalene-type epoxy resins, epoxides of condensates of phenols and aromatic aldehydes with phenolic hydroxyl groups, dicyclopentadiene-type epoxy resins, dicyclopentadiene aralkyl-type epoxy resins, dixylenol diglycidyl ether and other dixylenol-type epoxy resins, hydrogenated bisphenol A diglycidyl ether and other hydrogenated bisphenol A-type epoxy resins and their dicarboxylic acid-modified diglycidyl ether type epoxy resins, tris(2,3-epoxypropyl) isocyanates, aliphatic epoxy resins, etc.

[0046] As an epoxy resin, commercially available products can be used. Commercially available epoxy resins include: naphthalene-type epoxy resins such as EXA4700 (a tetrafunctional naphthalene-type epoxy resin, manufactured by DIC Corporation) and NC-7000 (a polyfunctional solid epoxy resin containing a naphthalene skeleton, manufactured by Nippon Kayaku Co., Ltd.); epoxides (triphenol-type epoxy resins) such as EPPN-502H (a pyrrolidone-type epoxy resin, manufactured by Nippon Kayaku Co., Ltd.) which are condensates of phenols and aromatic aldehydes with phenolic hydroxyl groups; dicyclopentadiene aralkyl-type epoxy resins such as EPICLON HP-7200H (a polyfunctional solid epoxy resin containing a dicyclopentadiene skeleton, manufactured by DIC Corporation); biphenyl aralkyl-type epoxy resins such as NC-3000H (a polyfunctional solid epoxy resin containing a biphenyl skeleton, manufactured by Nippon Kayaku Co., Ltd.); and EPICLON N660 and EPICLON N690 (DIC Corporation). Phenolic varnish epoxy resins such as EOCN-104S (manufactured by Nippon Kayaku Co., Ltd.); tris(2,3-epoxypropyl) isocyanates such as TEPIC (manufactured by Nissan Chemical Corporation); EPICLON 860, EPICLON 900-IM, EPICLON EXA-4816 and EPICLON EXA-4822 (manufactured by DIC Corporation), ARALDITE AER280 (manufactured by Asahi Kasei Corporation), and Epototo YD-134 (manufactured by NIPPON STEELEpoxy Manufacturing Co., Ltd.).This includes bisphenol A type epoxy resins such as JER834 and JER872 (manufactured by Mitsubishi Chemical Corporation), ELA-134 (manufactured by SUMITOMO CHEMICAL COMPANY, LIMITED), Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007 and 1009 (manufactured by Mitsubishi Chemical Corporation), DER-330, 301 and 361 (manufactured by The Dow Chemical Company), and YD8125 and YDF8170; bisphenol F type epoxy resins such as JER806 (manufactured by Mitsubishi Chemical Corporation); phenolic varnish type epoxy resins such as EPICLON N-740 (manufactured by DIC Corporation); and aliphatic epoxy resins such as DENACOL DLC301 (manufactured by NagaseChemteX Corporation).

[0047] From the viewpoint of ensuring sufficient film-forming properties even in the presence of inorganic fillers (described later), the epoxy resin content can be 1% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total amount of the thermosetting resin composition. From the viewpoint of further reducing curing shrinkage, the epoxy resin content can be 30% by mass or less, 20% by mass or less, or 15% by mass or less, based on the total amount of the thermosetting resin composition.

[0048] There are no particular limitations on the type of curing agent, as long as it is a compound that reacts with the epoxy resin to form a cross-linked structure. Examples of curing agents include phenolic resins, acid anhydrides, imidazole compounds, aliphatic amines, and alicyclic amines. For example, a phenolic resin can be used as a curing agent.

[0049] There are no particular restrictions on the type of phenolic resin as long as it has two or more phenolic hydroxyl groups; any known phenolic resin can be used. Examples of phenolic resins include varnish-type phenolic resins obtained by condensing or co-condensing phenolic compounds such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthol with aldehyde-containing compounds such as formaldehyde under an acidic catalyst; biphenyl skeleton-type phenolic resins; p-xylene-modified phenolic resins; m-xylene / p-xylene-modified phenolic resins; melamine-modified phenolic resins; terpene-modified phenolic resins; dicyclopentadiene-modified phenolic resins; cyclopentadiene-modified phenolic resins; polycyclic aromatic ring-modified phenolic resins; and toluene-modified naphthol resins.

[0050] Commercially available phenolic resins are available. Examples of commercially available phenolic resins include PHENOLITE LF2882, PHENOLITE LF2822, PHENOLITE TD-2090, PHENOLITE TD-2149, PHENOLITE VH-4150 and PHENOLITE VH4170 (manufactured by DIC Corporation); XLC-LL and XLC-4L (manufactured by Mitsui Chemicals, Inc.); SN-100, SN-300 and SN-400 (manufactured by NIPPON STEEL Chemical & Material Co., Ltd.); SKResin HE910 (manufactured by AIR WATER INC.); and DL-92 (manufactured by Meiwa Plastic Industries, Ltd.).

[0051] From the viewpoint of ensuring sufficient film formation even in the presence of inorganic fillers (described later), the content of the curing agent can be 1% or more by mass, 3% or more by mass, or 5% or more by mass, based on the total amount of the thermosetting resin composition. From the viewpoint of further reducing curing shrinkage, the content of the curing agent can be 30% or less by mass, 20% or less by mass, or 15% or less by mass, based on the total amount of the thermosetting resin composition.

[0052] At least one of the epoxy resin and the curing agent may contain a liquid component that is liquid at 25°C. That is, the epoxy resin and the curing agent may be composed of a liquid component that is liquid at 25°C and a solid component that is solid at 25°C. Here, "liquid component that is liquid at 25°C" refers to a component (compound) with a softening point below 25°C or a component (compound) with a viscosity of 400 Pa·s or less measured at 25°C. "Solid component that is solid at 25°C" refers to a component (compound) with a softening point above 25°C or a component (compound) with a viscosity of 400 Pa·s measured at 25°C.

[0053] Additionally, the softening point refers to the value determined by the ring and ball method according to JIS K7234:1986. Viscosity measured at 25°C refers to the value measured using an E-type or B-type viscometer while the component (compound) is maintained at 25°C.

[0054] Epoxy resins that are liquid at 25°C may contain, for example, a bisphenol backbone. The bisphenol backbone can be bisphenol A, bisphenol B, bisphenol C, bisphenol E, bisphenol F, bisphenol G, or bisphenol Z. Epoxy resins that are liquid at 25°C are mostly low molecular weight, which is sometimes disadvantageous from a heat resistance perspective. Therefore, epoxy resins that are liquid at 25°C contain their bisphenol backbones, thereby potentially improving heat resistance.

[0055] A curing agent that is liquid at 25°C can be a phenolic resin that is liquid at 25°C. A phenolic resin that is liquid at 25°C may, for example, contain a bisphenol backbone. Examples of phenolic resins that are liquid at 25°C include bisphenols such as bisphenol A, bisphenol F, bisphenol AD, and bisphenol S; dihydroxybiphenyls such as 4,4'-dihydroxybiphenyl; dihydroxyphenyl ethers such as bis(4-hydroxyphenyl) ether; phenolic resins in which straight-chain alkyl, branched-chain alkyl, aryl, hydroxyalkyl, allyl, or cyclic aliphatic groups are introduced into the aromatic ring of these phenolic backbones; and phenolic resins in which straight-chain alkyl, branched-chain alkyl, allyl, substituted allyl, cyclic aliphatic, or alkoxycarbonyl groups are introduced into the carbon atom located at the center of their bisphenol backbone.

[0056] From the perspective of embedding electronic components, based on the total amount of epoxy resin and curing agent, the total content of liquid components is 30-80% by mass. Based on the total amount of epoxy resin and curing agent, the total content of liquid components can be above 35% by mass, or below 70%, 60%, 50%, or 45% by mass.

[0057] Based on the total amount of the thermosetting resin composition, the total content of epoxy resin and curing agent can be more than 5% by mass, more than 7% by mass, or more than 10% by mass, or less than 50% by mass, less than 40% by mass, or less than 30% by mass.

[0058] The equivalent ratio of the epoxy groups (or epoxypropyl groups) of the epoxy resin to the reactive functional groups of the epoxy groups (or epoxypropyl groups) of the curing agent (equivalent amount of epoxy groups (or epoxypropyl groups) of the epoxy resin / equivalent amount of reactive functional groups of the epoxy groups (or epoxypropyl groups) of the curing agent) can, for example, be 0.7 to 2.0, 0.8 to 1.8, or 0.9 to 1.7.

[0059] Regarding curing accelerators, there are no particular limitations as long as they promote the reaction between epoxy resin and curing agent. Examples of curing accelerators include amine compounds, phosphorus compounds, and imidazole compounds. Examples of amine compounds include 1,8-diazabicyclo[5.4.0]undecene-7 and 1,5-diazabicyclo[4.3.0]nonene-5. Examples of phosphorus compounds include triphenylphosphine and its addition reactants, (4-hydroxyphenyl)diphenylphosphine, bis(4-hydroxyphenyl)phenylphosphine, and tri(4-hydroxyphenyl)phosphine. Examples of imidazole compounds include 2-ethyl-4-methylimidazolium, 1-cyanoethyl-2-ethyl-4-methylimidazolium, and 2-phenyl-4,5-dihydroxymethylimidazolium. From the viewpoint of abundant inducibles and easy attainment of the desired activity temperature, imidazole compounds are suitable curing accelerators.

[0060] Based on the total amount of epoxy resin and curing agent, the content of curing accelerator can be 0.01% to 5% by mass, or more than 0.1% by mass or more than 0.3% by mass, or less than 3% by mass or less than 1.5% by mass. If the content of curing accelerator is more than 0.01% by mass based on the total amount of epoxy resin and curing agent, it is easy to obtain a sufficient curing promotion effect. If it is less than 5% by mass, it can suppress unexpected curing reactions and is less likely to produce molding defects such as cracks in the thermosetting resin layer and an increase in melt viscosity.

[0061] There are no particular limitations on the inorganic filler, and conventionally known inorganic fillers can be used. Examples of inorganic fillers include barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, alumina, aluminum hydroxide, silicon nitride, and aluminum nitride. Among these, silica is a suitable inorganic filler from the viewpoints of improving dispersibility in the resin through surface modification, easily suppressing precipitation in the resin varnish, and having a relatively small coefficient of thermal expansion, thus easily obtaining the desired cured film properties.

[0062] Inorganic fillers can be surface-treated. There are no particular limitations on the surface treatment method, but from the viewpoint of simplicity and ease of imparting the desired properties, the use of silane coupling agents is preferable. Examples of silane coupling agents include alkylsilanes, alkoxysilanes, vinylsilanes, epoxysilanes, aminosilanes, acrylic silanes, methacrylate silanes, mercaptosilanes, sulfide silanes, isocyanate silanes, sulfur-containing silanes, styryl silanes, and alkylchlorosilanes.

[0063] Specific examples of silane coupling agents include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxysilane, diisobutyldimethoxysilane, isobutyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, and cyclohexylmethyldimethoxysilane. , n-Octyltriethoxysilane, n-Dodecylmethoxysilane, Phenylacetyltrimethoxysilane, Diphenyldimethoxysilane, Triphenylsilanol, Methyltrichlorosilane, Dimethyldichlorosilane, Trimethylchlorosilane, n-Octyldimethylchlorosilane, Tetraethoxysilane, 3-Aminopropyltrimethoxysilane, 3-Aminopropyltriethoxysilane, 3-(2-Aminoethyl)aminopropyltrimethoxysilane, 3-(2-Aminoethyl)aminopropylmethyldimethoxysilane, 3-Phenylanopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, bis(3-(triethoxysilyl)propyl)disulfide, bis(3-(triethoxysilyl)propyl)tetrasulfide, vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, ethylene Allyltriisopropoxysilane, allyltrimethoxysilane, diallyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxysilane, N-(1,3-dimethylbutylene)-3-aminopropyltriethoxysilane, etc.

[0064] There are no particular limitations on the average particle size of the inorganic filler; for example, it can be 0.01–50 μm, or 0.1 μm or more, or 0.3 μm or more, or 25 μm or less, or 10 μm or less. If the average particle size of the inorganic filler is 0.01 μm or more, the inorganic filler becomes less prone to aggregation, and the dispersion of the inorganic filler in the thermosetting resin layer becomes easier. If the average particle size of the inorganic filler is 50 μm or less, it becomes less prone to precipitation in the resin varnish, and it is easier to produce a uniform thermosetting resin layer. Furthermore, the average particle size of the inorganic filler can be determined, for example, by laser diffraction.

[0065] From the viewpoint of suppressing warping caused by the difference in thermal expansion rates between the thermosetting resin layer and the electronic component, the content of inorganic filler can be 30% by mass or more, 50% by mass or more, or 70% by mass or more, based on the total amount of the thermosetting resin composition. From the viewpoint of preventing cracks in the thermosetting resin layer and suppressing defects such as inadequate sealing, the content of inorganic filler can be 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total amount of the thermosetting resin composition.

[0066] Regarding thermosetting resin compositions, as stress relievers, they may further contain elastomers. Examples of elastomers include styrene-butadiene particles, silicone powder, silicone oil, and silicone oligomers.

[0067] The thermosetting resin composition may further contain other additives without impairing the effects of the present invention. Specific examples of additives include pigments, dyes, release agents, antioxidants, surface tension modifiers, etc.

[0068] The thickness of the thermosetting resin layer 2 is 1 to 100 μm, for example, it can be 10 μm or more, 20 μm or more, or 30 μm or more, or it can be 90 μm or less, 80 μm or less, or 70 μm or less. If the thickness of the thermosetting resin layer 2 is 1 μm or more, it is easy to obtain good embedding properties of electronic components. If the thickness of the thermosetting resin layer 2 is 100 μm or less, the effects of the present invention can be obtained at a higher level.

[0069] For the purpose of protecting the thermosetting resin layer 2, the sealing film may further have a protective layer (e.g., a protective film) covering the surface of the thermosetting resin layer 2 that is opposite to the support. By providing the protective layer, the operability of the sealing film is improved, and adverse conditions such as the resin layer adhering to the back of the support when the sealing film is rolled up can be avoided.

[0070] The protective layer is not particularly limited, but a protective layer exemplified by a substrate film serving as a support can be used. The thickness of the protective layer can be, for example, 1 to 100 μm.

[0071] [Manufacturing method of sealing film]

[0072] The method for manufacturing the sealing film according to this embodiment includes: a step of applying a resin varnish containing a thermosetting resin composition and an organic solvent onto the support by means of a coating method in which the support is moved by a roller disposed on the back side of the support (hereinafter, sometimes referred to as "step (A)"); and a step of removing at least a portion of the organic solvent from the applied resin varnish and forming a thermosetting resin layer on the support (hereinafter, sometimes referred to as "step (B)").

[0073] In step (A), a resin varnish containing a thermosetting resin composition and an organic solvent is prepared. The resin varnish can be obtained by blending the components of the thermosetting resin composition with an organic solvent.

[0074] There are no particular limitations on the organic solvent. From the viewpoint of low environmental impact and easy dissolution of epoxy resin and curing agent, it can be at least one of the group consisting of esters, ketones, and alcohols. From the viewpoint of particularly easy dissolution of epoxy resin and curing agent, it can be ketones. From the viewpoint of low volatility and easy removal at room temperature (25°C), ketones can be at least one of the group consisting of acetone, methyl ethyl ketone, and methyl isobutyl ketone.

[0075] When the total amount of each component in the thermosetting resin composition is set to 100 parts by mass, the amount of organic solvent used in preparing the resin varnish can be 5 to 50 parts by mass. If the amount of organic solvent is 5 parts by mass or more, it is easy to ensure the fluidity of the resin varnish; if it is 50 parts by mass or less, the amount of solvent that should evaporate can be reduced.

[0076] Next, the resin varnish is applied to the support by moving the support using a roller located on the back side of the support (the side opposite to the surface coated with the resin varnish). The application method can be, for example, a die-casting machine application method or a comma-type coating machine application method. The die-casting machine application method moves the support using a roller located on the back side of the support and applies the varnish to the support via a die used to uniformly distribute a pre-measured amount of resin varnish in the width direction. The comma-type coating machine application method moves the support using a roller located on the back side of the support and smooths the coating surface by using a comma roller with a pre-thickened coating layer set to a certain height to remove impurities. By employing these application methods, it is possible to suppress the formation of recesses that do not meet the specified thickness on the surface of the thermosetting resin layer opposite to the support (the sealing surface), and the effects of the present invention can be achieved to a high degree.

[0077] In step (B), at least a portion of the organic solvent is removed from the coated resin varnish. One method for removing at least a portion of the organic solvent is to heat and dry the resin varnish. Examples of methods for heating and drying the resin varnish include hot air blowing. The heating temperature for heating and drying can be, for example, 40–150°C, and the holding time at that temperature can be 1–30 minutes. The heating and drying conditions can be a combination of multiple conditions with different heating temperatures and / or holding times.

[0078] Thus, a sealing film 10 can be obtained by forming a thermosetting resin layer 2 on the support 1. Based on the total amount of the thermosetting resin layer, the content of volatile components (mainly organic solvents) in the thermosetting resin layer can be 0.01–2.0% by mass or 0.1–1.7% by mass. If the content of volatile components is within such a range, adverse conditions such as film cracking can be prevented, and good operability can be obtained. Furthermore, it can prevent adverse conditions such as porosity caused by the volatilization of volatile components during thermosetting.

[0079] [Electronic Components and Their Manufacturing Methods]

[0080] The manufacturing method of an electronic component device using the sealing film of this embodiment will be described. Hereinafter, an embodiment of the manufacturing method of a semiconductor device having a semiconductor wafer, which is a representative example of an electronic component, will be described in detail.

[0081] Figure 2 and Figure 3 This is a schematic cross-sectional view illustrating one embodiment of a semiconductor device manufacturing method. The semiconductor device manufacturing method of this embodiment includes the steps of attaching a temporary fixing material 40 to a substrate 30 and temporarily fixing a plurality of semiconductor wafers 20 onto the temporary fixing material 40. Figure 2 (a)); The process of temporarily fixing a semiconductor wafer 20, a sealing film 10 having a support 1 and a thermosetting resin layer 2 disposed on the support 1, overlapping the semiconductor wafer 20 and the sealing surface 2S of the thermosetting resin layer 2 facing each other (the direction in which the sealing surface 2S of the thermosetting resin layer 2 is in contact with the semiconductor wafer 20), and pressing them under heat in this state to embed the semiconductor wafer 20 into the thermosetting resin layer 2. Figure 2 (b)); and the process of curing the thermosetting resin layer 2 embedded in the semiconductor wafer 20. Figure 2 (c) A sealing portion 2a of a semiconductor wafer 20 is formed by curing the thermosetting resin layer 2 to seal the semiconductor wafer 20.

[0082] In the manufacturing process of semiconductor devices, lamination or compression molding can be used to press the sealing film.

[0083] There are no particular limitations on the laminator used in the lamination process. Examples of laminators include roller laminators and balloon laminators. Among these, from the viewpoint of further improving embeddability, a balloon laminator capable of vacuum pressurization can be used.

[0084] The temperature (e.g., lamination temperature) used for embedding the semiconductor wafer is adjusted such that the semiconductor wafer is embedded by the flow of the thermosetting resin layer 2. This temperature can be below the softening point of the support. The pressure used for embedding the semiconductor wafer can be appropriately adjusted according to the size and density of the semiconductor wafer (or electronic component), for example, it can be 0.05 to 1.5 MPa or 0.1 to 1.0 MPa. The pressing time is not particularly limited and can be 20 to 600 seconds, 30 to 300 seconds, or 40 to 120 seconds. After embedding the semiconductor wafer, the support 1 is peeled off from the thermosetting resin layer 2 at an appropriate time, for example, after the semiconductor wafer 20 is embedded in the thermosetting resin layer 2 and the thermosetting resin layer 2 in which the semiconductor wafer 20 is embedded has cured.

[0085] The curing of the thermosetting resin layer 2 can be carried out, for example, under atmospheric conditions or inert gas. The curing temperature is not particularly limited and can be 80–280°C, 100–240°C, or 120–200°C. If the curing temperature is above 80°C, the thermosetting resin layer cures sufficiently, effectively suppressing the occurrence of adverse conditions. If the curing temperature is below 280°C, thermal damage to other materials can be suppressed. The curing time is not particularly limited and can be 30–600 minutes, 45–300 minutes, or 60–240 minutes. If the curing time is within this range, the thermosetting resin layer cures sufficiently, easily achieving good production efficiency. Curing conditions can be a combination of multiple conditions with different temperatures and / or times.

[0086] The process of embedding the electronic component (semiconductor wafer 20) in the thermosetting resin layer 2 and the process of curing the thermosetting resin layer 2 to form the sealing portion 2a can be separate processes, or they can be processes performed simultaneously or continuously. For example, the electronic component can be embedded in the thermosetting resin layer by pressing while heating the thermosetting resin layer and the electronic component, and then the thermosetting resin layer can be cured to form a sealing portion that seals the electronic component.

[0087] In this embodiment, a semiconductor device can be obtained through the following steps: forming an insulating layer, forming a wiring pattern, mounting balls, and cutting. To perform these steps with high precision and efficiency, it is preferable that the warpage of the sealant 100 is small.

[0088] First, the temporary fixing material 40 is peeled off together with the substrate 30 to obtain a sealed molded part 100 formed by the semiconductor wafer 20 and the sealing part 2a sealing it. Figure 3 (a)). The semiconductor wafer 20 is exposed within one main surface of the sealing mold 100. An insulating layer 50 is provided on the main surface of the sealing mold on the side where the semiconductor wafer 20 is exposed. Figure 3(b) Next, wiring 54 is formed by patterning the insulating layer 50, and ball 56 is mounted on the patterned insulating layer 52. Figure 3 (c)).

[0089] Next, the sealing molding 100 is monolithized using the cutting blade 60. Figure 3 (d) and (e)). Thus, a semiconductor device 200 having a cured product, namely the sealing portion 2a, having a semiconductor wafer 20 and a thermosetting resin layer of a sealing film of this embodiment can be obtained. In the semiconductor device 200, the semiconductor wafer 20 is embedded in the sealing portion 2a.

[0090] The preferred embodiments of the sealing film and the manufacturing method of the semiconductor device and electronic component device of the present invention have been described above. However, the present invention is not necessarily limited to the above embodiments, and appropriate modifications can be made without departing from its spirit.

[0091] Example

[0092] The present invention will be specifically described below through embodiments, but the present invention is not limited to these embodiments.

[0093] (Example 1)

[0094] [Making of the sealing film]

[0095] <Preparation of Materials>

[0096] (A) Epoxy resin

[0097] Bisphenol F type epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: JER806, epoxy equivalent: 160, liquid at 25°C)

[0098] (B) Curing agent

[0099] Phenolic varnish resin (manufactured by Meiwa Plastic Industries, Ltd., product name: DL-92, hydroxyl equivalent: 103, solid at 25°C)

[0100] (C) Curing accelerator

[0101] Imidazole compounds (2-ethyl-4-methylimidazole, manufactured by SHIKOKU KASEI HOLDINGS CORPORATION, product name: 2E4MZ)

[0102] (D) Inorganic fillers

[0103] Silica (manufactured by ADMATECHS CO.,LTD., product name: SX-E2, surface treatment: phenylaminosilane treatment, average particle size: 5.8μm)

[0104] (E) Organic solvents

[0105] Methyl ethyl ketone

[0106] <Preparation of Resin Varnish>

[0107] 497.5 g of component (E) and 3500 g of component (D) were added to a 10 L container, and a dispersion was prepared by using a stirring blade to disperse component (D) in component (E). 300 g of component (A) and 460 g of component (B) were added to this dispersion and stirred. After components (A) and (B) dissolved, 2.5 g of component (C) was added and stirred for 1 hour to prepare a mixture. The mixture was filtered through a nylon #200 mesh (aperture: 75 μm) filter, and the filtrate was collected to obtain a resin varnish containing a thermosetting resin composition and an organic solvent.

[0108] <Making of Sealing Film>

[0109] As a support, a polyethylene terephthalate (PET) film (thickness: 50 μm) was prepared using release agent A (silicone-based (mid-peel)). Using a coating machine (coating head type: diecoater), the obtained resin varnish was applied to the support under the following conditions. The organic solvent was removed from the applied resin varnish under the following drying conditions to form a thermosetting resin layer with a thickness of 50 μm. Thus, the sealing film of Example 1, having a support and a thermosetting resin layer disposed on the support, was obtained.

[0110] In addition, regarding the thickness of the thermosetting resin layer, the thickness of the sealing film was measured using a digital display (manufactured by Mitutoyo Corporation, product name: ID-C125B) under the following conditions, and the result was obtained by subtracting the thickness of the support, which was also measured, from the thickness of the sealing film.

[0111] • Probe: Flat plate type

[0112] • Stent: Comparison with stent BSG-20

[0113] Coating speed and drying speed refer to the movement speed of the roller-based support during coating and drying. The drying conditions temperature and oven length represent the temperature inside the drying oven and the distance the support moves within the oven, respectively. Drying is carried out in two stages under different heating temperature conditions. These conditions are the same in other embodiments and comparative examples.

[0114] Coating speed and drying speed: 5m / min

[0115] Drying conditions (temperature / furnace length): 50℃ / 9m, 60℃ / 9m

[0116] (Example 2)

[0117] Except for changing release agent A to release agent B (silicone-based (light peel)), the sealing film of Example 2 (support thickness: 50 μm, thermosetting resin layer thickness: 50 μm) was obtained in the same manner as in Example 1.

[0118] (Comparative Example 1)

[0119] Except for changing the thickness of the support from 50 μm to 38 μm, the sealing film of Comparative Example 1 (thickness of support: 38 μm, thickness of thermosetting resin layer: 50 μm) was obtained in the same manner as in Example 1.

[0120] (Comparative Example 2)

[0121] Except for changing the thickness of the support from 50 μm to 38 μm, the sealing film of Comparative Example 2 (thickness of support: 38 μm, thickness of thermosetting resin layer: 50 μm) was obtained in the same manner as in Example 2.

[0122] (Refer to Example 1)

[0123] Except for changing the thickness of the support from 50 μm to 38 μm and the thickness of the thermosetting resin layer from 50 μm to 120 μm, the sealing film of Reference Example 1 (thickness of support: 38 μm, thickness of thermosetting resin layer: 120 μm) was obtained in the same manner as in Example 2.

[0124] [Evaluation of Sealing Membrane]

[0125] <Measurement of the number of recesses>

[0126] The phenomenon where the thickness of the thermosetting resin layer does not meet the specified requirement in certain areas during its formation is called "rejection." Regarding the thermosetting resin layer formed on the support, measurements were taken visually using transmitted light, measuring every 1m... 2 The number of recesses. The results are shown in Table 1.

[0127] [Table 1]

[0128]

[0129] Comparing Reference Example 1 with Comparative Examples 1 and 2, as shown in Reference Example 1, no recesses were observed when the thickness of the thermosetting resin layer exceeded 100 μm. In contrast, as shown in Comparative Examples 1 and 2, recesses were observed when the thickness of the thermosetting resin layer was 100 μm or less. This indicates that recesses form as the thermosetting resin layer becomes thinner. Next, comparing Examples 1 and 2 with Comparative Examples 1 and 2, it is evident that when the thickness of the thermosetting resin layer is 100 μm or less, setting the thickness of the support to 45 μm or more reduces the number of recesses. From the above, it is confirmed that the sealing film manufactured by the manufacturing method of the present invention can reduce sealing defects.

[0130] Symbol Explanation

[0131] 1-Support, 2-Thermosetting resin layer, 2a-Sealing part, 10-Sealing film, 20-Semiconductor wafer, 30-Substrate, 40-Temporary fixing material, 50-Insulating layer, 52-Patterned insulating layer, 54-Wire, 56-Ball, 60-Cut blade, 100-Sealing molding, 200-Semiconductor device.

Claims

1. A method for manufacturing a sealing film, the sealing film being used to seal electronic components, the sealing film comprising: a support; and a thermosetting resin layer disposed on the support and containing a thermosetting resin composition, the method for manufacturing the sealing film comprising: A process of applying a resin varnish containing the thermosetting resin composition and an organic solvent onto the support by means of a coating method in which the support is moved by a roller disposed on the back side of the support. and The process of removing at least a portion of the organic solvent from the applied resin varnish and forming the thermosetting resin layer on the support. The thickness of the support is 45 μm or more. The thickness of the thermosetting resin layer is 1–100 μm.

2. The method for manufacturing a sealing film according to claim 1, wherein, The support is a polyester film or a polyimide film.

3. The method for manufacturing a sealing film according to claim 1, wherein, The thermosetting resin composition contains epoxy resin and a curing agent.

4. The method for manufacturing a sealing film according to claim 3, wherein, At least one of the epoxy resin and the curing agent contains a liquid component that is liquid at 25°C. Based on the total amount of the epoxy resin and the curing agent, the total content of the liquid components is 30-80% by mass.

5. A method for manufacturing an electronic component device, comprising: The process of embedding electronic components in the thermosetting resin layer of the sealing film obtained by the manufacturing method of the sealing film according to any one of claims 1 to 4; and The process of curing the thermosetting resin layer to form a sealing part of a sealed electronic component, which is a cured product of the thermosetting resin layer.

6. A sealing film used for sealing electronic components, The sealing membrane has the following features: Support body; and A thermosetting resin layer, disposed on the support and containing a thermosetting resin composition, The thickness of the support is 45 μm or more. The thickness of the thermosetting resin layer is 1–100 μm.

7. An electronic component device comprising an electronic component and a sealing portion for sealing the electronic component. The sealing portion is the cured product of the thermosetting resin layer of the sealing film according to claim 6.

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