Dynamic gas isolation device of multi-channel gas inlet structure

Abstract

A dynamic gas isolation device of a multi-channel gas inlet structure belongs to the technical field of gas isolation and comprises a projection optical box, a connecting pipeline, a wafer chamber, a semi-Laval spray pipe and a clean gas inlet. The projection optical box is located right above the wafer chamber, and an inner cavity of the projection optical box is in sealed communication with the wafer chamber through a connecting pipeline; one end of the half-Laval spray pipe is hermetically communicated with the connecting pipeline, and the other end is used for introducing clean gas; and the plurality of clean gas inlets are arranged at the top of the wafer chamber and are positioned above the wafer in the wafer chamber. According to the invention, a multi-channel gas inlet structure combining a semi-Laval type gas inlet channel form and multiple gas inlets above the wafer is adopted, so that the flow guiding performance of clean gas and the stability of barrier formation are improved, and the diffusion of pollutants in a key area is inhibited; the position and flow distribution of the clean gas inlet can be flexibly adjusted according to different application scenes, the adaptability of the system and the utilization efficiency of the clean gas are improved, and the technical requirement for pollutant control is met.

Description

Technical Field

[0001] This invention belongs to the field of gas isolation technology, and in particular relates to a dynamic gas isolation device with a multi-channel air intake structure. Background Technology

[0002] In environments with extremely high cleanliness requirements, such as semiconductor manufacturing, precision optics, and micro-nano fabrication, especially in the field of extreme ultraviolet lithography (EUVL), the application of dynamic gas isolation technology is indispensable. The core function of this technology is to form a gas isolation layer through flowing clean gas to prevent downstream pollutants from diffusing to upstream critical components, thereby protecting the optical system and ensuring stable system operation.

[0003] Currently, existing dynamic gas lock devices typically employ a unidirectional air intake structure, where clean gas is introduced from one side of the device and enters the flow channel through a slit or nozzle. The high-speed flow of clean gas forms a gas curtain or gas wall within a specific area. Although existing dynamic gas lock devices have a certain degree of gas isolation effect, the following problems still exist: ① Uneven flow velocity distribution: Since traditional nozzle structures are mostly simple conical or straight pipe forms, they lack precise control over the flow field, which can easily lead to insufficient airflow velocity in some areas, affecting the continuity and stability of the overall barrier.

[0004] ② Simple structure and fixed direction: Clean gas is usually injected only from both sides of the gas lock device. However, the key area above the wafer, which is the source of pollutant release, often lacks a specially designed gas injection channel, which means that pollutants are not effectively blocked in the rising path and there is a risk of backflow.

[0005] ③ Low gas utilization efficiency: Traditional air intake structures make it difficult to achieve effective focusing and path control of gas flow, which can easily lead to the diffusion of clean gas outside the target area, resulting in resource waste and increased operating energy consumption.

[0006] ④ Poor adjustment capability: Traditional intake structures have a single method for controlling gas flow and pressure, and cannot flexibly adjust gas distribution according to process requirements. Summary of the Invention

[0007] To address the problems existing in the prior art, this invention provides a dynamic gas isolation device with a multi-channel air intake structure. It employs a multi-channel air intake structure combining a semi-Laval-type air intake duct with multiple air inlets above the wafer. This enhances the flowability of clean gas and the stability of barrier formation, suppressing the diffusion of contaminants in critical areas. The semi-Laval-type air intake duct accelerates and directs the delivery of clean gas, forming a dynamic gas isolation barrier. The clean gas injected from the multiple air inlets above the wafer forms a uniform and stable gas isolation layer, strengthening the clean gas's ability to block contaminants. The inlet position and flow distribution can be flexibly adjusted according to different application scenarios, improving system adaptability and clean gas utilization efficiency, and meeting the technical requirements for contaminant control in high-cleanliness scenarios such as semiconductor lithography.

[0008] To achieve the above objectives, the present invention adopts the following technical solution: a dynamic gas isolation device with a multi-channel air intake structure, comprising a projection optical box, a connecting pipe, a wafer chamber, a semi-Laval nozzle, and a clean gas inlet; the projection optical box is located directly above the wafer chamber, and the internal cavity of the projection optical box is sealed and connected to the wafer chamber through the connecting pipe; the semi-Laval nozzle is horizontally arranged, one end of the semi-Laval nozzle is sealed and connected to the connecting pipe, and the other end of the semi-Laval nozzle is used to introduce clean gas; there are several clean gas inlets, all of which are located at the top of the wafer chamber and above the wafer inside.

[0009] The number of semi-Laval nozzles is two, and the phase angle between the two semi-Laval nozzles on the connecting pipe is 180°.

[0010] The wall of the semi-Laval nozzle faces downwards on the Laval-shaped side.

[0011] Both the semi-Laval nozzle and the clean gas inlet adopt a modular, detachable, and replaceable structure.

[0012] Several of the clean gas inlets are evenly distributed along the circumferential direction.

[0013] The distance between adjacent clean gas inlets is 5mm to 20mm.

[0014] All of the cleaning gas inlets have their nozzles angled and their nozzles face the circumference of the wafer.

[0015] Each of the clean gas inlets is independently equipped with a flow regulation mechanism.

[0016] The installation height of each of the cleaning gas inlets is adjustable, and the distance between the cleaning gas inlet and the wafer can be adjusted from 5mm to 30mm.

[0017] The cleaning gases include, but are not limited to, hydrogen, nitrogen, argon, and helium.

[0018] The beneficial effects of this invention are: The dynamic gas isolation device with a multi-channel air intake structure of the present invention adopts a multi-channel air intake structure that combines a semi-Laval-type air intake channel with multiple air intakes above the wafer. This improves the flowability of clean gas and the stability of barrier formation, and inhibits the diffusion of pollutants in critical areas. The semi-Laval-type air intake channel is used to accelerate and directionally transport clean gas and form a dynamic gas isolation barrier. The clean gas injected from the multiple air intakes above the wafer is used to form a uniform and stable gas isolation layer, which enhances the ability of clean gas to block pollutants. The position and flow distribution of the air intakes can be flexibly adjusted according to different application scenarios, improving system adaptability and clean gas utilization efficiency, and meeting the technical requirements for pollutant control in high-cleanliness scenarios such as semiconductor lithography. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of a dynamic gas isolation device with a multi-channel air intake structure according to the present invention; In the diagram, 1—projection optics box, 2—connecting pipe, 3—wafer chamber, 4—semi-Laval nozzle, 5—cleaning gas inlet, and 6—wafer. Detailed Implementation

[0020] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0021] like Figure 1 As shown, a dynamic gas isolation device with a multi-channel air intake structure includes a projection optics box 1, a connecting pipe 2, a wafer chamber 3, a semi-Laval nozzle 4, and a clean gas inlet 5. The projection optics box 1 is located directly above the wafer chamber 3, and the internal cavity of the projection optics box 1 is sealed and connected to the wafer chamber 3 through the connecting pipe 2. The semi-Laval nozzle 4 is horizontally arranged, with one end sealed and connected to the connecting pipe 2, and the other end used to introduce clean gas. There are several clean gas inlets 5, all of which are located at the top of the wafer chamber 3 and above the wafer 6 inside.

[0022] The number of semi-Laval nozzles 4 is two, and the phase angle between the two semi-Laval nozzles 4 on the connecting pipe 2 is 180°.

[0023] The Laval-shaped side wall of the semi-Laval nozzle 4 faces downwards.

[0024] Both the semi-Laval nozzle 4 and the clean gas inlet 5 adopt a modular, detachable, and replaceable structure.

[0025] Several of the clean gas inlets 5 are evenly distributed along the circumferential direction.

[0026] The distance between adjacent clean gas inlets 5 is 5mm to 20mm.

[0027] All the nozzles of the cleaning gas inlet 5 are inclined and the nozzles are directed toward the circumference of the wafer 6.

[0028] Each of the clean gas inlets 5 is independently equipped with a flow regulation mechanism.

[0029] The installation height of each of the cleaning gas inlets 5 is adjustable, and the distance between the cleaning gas inlet 5 and the wafer 6 can be adjusted from 5mm to 30mm.

[0030] The cleaning gases include, but are not limited to, hydrogen, nitrogen, argon, and helium.

[0031] The following describes a single use of the present invention with reference to the accompanying drawings: During the photolithography process of wafer 6, the projection optical box 1, as a key component of the photolithography system, is used to carry high-precision optical projection instruments. The wafer cavity 3 provides the processing environment for wafer 6. The connecting pipe 2, as the transition area between the projection optical box 1 and the wafer cavity 3, is the main path for the upward diffusion of contaminants.

[0032] To prevent contaminants from spreading upwards to the projection optics box 1, clean gas can be introduced into the semi-Laval nozzles 4 symmetrically arranged on both sides to accelerate the injection of clean gas into the connecting pipe 2, thereby constructing a stable dynamic gas isolation barrier in the middle of the connecting pipe 2.

[0033] Simultaneously, clean gas is also introduced into the clean gas inlet 5 and injected into the wafer chamber 3 through the clean gas inlet 5, forming a uniform and stable gas isolation layer above the wafer 6. Through the dynamic gas isolation barrier in the middle of the connecting pipe 2 and the multi-level gas curtain isolation of the gas isolation layer above the wafer 6, contaminants can be effectively prevented from entering the projection optical box 1 from the wafer chamber 3 through the connecting pipe 2, thus meeting the high cleanliness requirements of the lithography system.

[0034] In addition, to better meet the cleanliness control requirements of different systems, the gas distribution, flow rate, and pressure of the clean gas inlet 5 can be flexibly adjusted by independently configuring a flow regulation mechanism. Furthermore, by replacing the semi-Laval type nozzles 4 with different lengths, sizes, and diameters, the injection parameters of the clean gas can be further adjusted flexibly according to the actual working conditions, thereby improving the system adaptability and the utilization efficiency of the clean gas, and thus meeting the technical requirements for pollution control in high-cleanliness scenarios such as semiconductor lithography.

[0035] The solutions in the embodiments are not intended to limit the scope of protection of the present invention. All equivalent implementations or modifications that do not depart from the present invention are included in the scope of protection of the present invention.

Claims

1. A dynamic gas isolation device with a multi-channel air intake structure, characterized in that: The device includes a projection optics box, connecting pipes, a wafer chamber, a semi-Laval nozzle, and a cleaning gas inlet. The projection optics box is located directly above the wafer chamber, and its internal cavity is sealed to the wafer chamber via the connecting pipe. The semi-Laval nozzle is horizontally positioned, with one end sealed to the connecting pipe and the other end used to introduce cleaning gas. Several cleaning gas inlets are located at the top of the wafer chamber and above the wafer inside.

2. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The number of semi-Laval nozzles is two, and the phase angle between the two semi-Laval nozzles on the connecting pipe is 180°.

3. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The wall of the semi-Laval nozzle faces downwards on the Laval-shaped side.

4. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: Both the semi-Laval nozzle and the clean gas inlet adopt a modular, detachable, and replaceable structure.

5. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: Several of the clean gas inlets are evenly distributed along the circumferential direction.

6. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The distance between adjacent clean gas inlets is 5mm to 20mm.

7. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: All of the cleaning gas inlets have their nozzles angled and their nozzles face the circumference of the wafer.

8. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: Each of the clean gas inlets is independently equipped with a flow regulation mechanism.

9. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The installation height of each of the cleaning gas inlets is adjustable, and the distance between the cleaning gas inlet and the wafer can be adjusted from 5mm to 30mm.

10. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The cleaning gases include, but are not limited to, hydrogen, nitrogen, argon, and helium.

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