Semiconductor device, circuit board, electric control box and electrical equipment

Abstract

The invention discloses a semiconductor device, a circuit board, an electric control box and electrical equipment, the semiconductor device comprises a substrate and a driving side pin frame, the substrate comprises a fan power bonding pad, a compressor power bonding pad and a PFC power bonding pad, the driving side pin frame comprises a fan driving bonding pad provided with a fan driving chip, a compressor driving bonding pad provided with a compressor driving chip and a PFC driving bonding pad provided with a PFC driving chip, and the fan driving chip is electrically connected with the control end of the fan power chip through a first wire. The compressor driving chip is electrically connected with the control end of the compressor power chip through a second wire. The PFC driving chip is electrically connected with the control end of the PFC power chip through a third wire. At least one of the first wire, the second wire and the third wire is provided with an anti-interference assembly. Therefore, by arranging the semiconductor device, high-frequency electromagnetic interference can be effectively suppressed, so that high-frequency noise is reduced, and electromagnetic compatibility is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor device, circuit board, electrical control box, and electrical equipment. Background Technology

[0002] Electromagnetic compatibility (EMC) refers to the ability of a device or system to operate within its electromagnetic environment without causing unacceptable electromagnetic interference to any other equipment in that environment. EMC includes two aspects: firstly, the electromagnetic interference generated by the device during normal operation must not exceed certain limits; secondly, the device must have a certain degree of immunity to electromagnetic interference present in its environment, i.e., electromagnetic susceptibility.

[0003] In existing technologies, the high-power switching signal source of the electronic control board of traditional air conditioners is not shielded, which leads to serious electromagnetic interference (EMI) problems and high frequency noise. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one object of the present invention is to provide a semiconductor device that can effectively suppress high-frequency electromagnetic interference, thereby improving electromagnetic compatibility.

[0005] The present invention further proposes a circuit board.

[0006] The present invention further proposes an electrical control box.

[0007] The present invention also proposes an electrical device.

[0008] According to a semiconductor device of a first aspect of the present invention, the semiconductor device has a first direction and a second direction perpendicular to each other, the semiconductor device comprising: a substrate, the substrate including fan power pads, compressor power pads, PFC power pads and rectifier bridge pads spaced apart along the first direction, wherein the fan power pads are provided with fan power chips, the compressor power pads are provided with compressor power chips, the PFC power pads are provided with PFC power chips, and the rectifier bridge pads are provided with rectifier chips, the fan power chips, the compressor power chips and the PFC power chips each having a control terminal; and a drive-side pin frame, the drive-side pin frame including fan drive pads, compressor drive pads and PFC drive pads spaced apart along the first direction, wherein the fan drive pads are located at... The compressor drive pad and the PFC drive pad are located on one side of the second direction of the fan power pad, respectively. The fan drive pad is equipped with a fan drive chip, the compressor drive pad is equipped with a compressor drive chip, and the PFC drive pad is equipped with a PFC drive chip. The control terminal of the fan drive chip and the fan power chip is electrically connected via a first wire. The control terminal of the compressor drive chip and the compressor power chip is electrically connected via a second wire. The control terminal of the PFC drive chip and the PFC power chip is electrically connected via a third wire. At least one of the first wire, the second wire, and the third wire is equipped with an anti-interference component.

[0009] Therefore, by incorporating this semiconductor device, high-frequency electromagnetic interference can be effectively suppressed, thereby reducing high-frequency noise and improving electromagnetic compatibility.

[0010] In some examples of the present invention, the anti-interference component is a ferrite bead.

[0011] In some examples of the present invention, the ferrite beads are ferrite adhesive beads, manganese zinc beads, or nickel zinc beads.

[0012] In some examples of the present invention, the wind turbine power pad includes: a first low-voltage power pad, a second low-voltage power pad, a third low-voltage power pad, and a high-voltage power pad distributed sequentially along the first direction, wherein the first low-voltage power pad, the second low-voltage power pad, the third low-voltage power pad, and the high-voltage power pad are respectively provided with the wind turbine power chip; the wind turbine drive pad includes a first wind turbine drive pad and a second wind turbine drive pad distributed at intervals along the first direction, wherein the first wind turbine drive pad is located in the second direction of the first low-voltage power pad, the second low-voltage power pad, and the third low-voltage power pad. On one side of the high-voltage power pad, the second fan drive pad is located on one side of the high-voltage power pad of the fan. The first fan drive pad and the second fan drive pad are respectively provided with fan drive chips. There are multiple first wires. The control terminals of the fan power chips of the first low-voltage power pad, the second low-voltage power pad, and the third low-voltage power pad are electrically connected to the fan drive chips through the first wires. The control terminal of the fan power chip of the high-voltage power pad is electrically connected to the fan drive chips through the first wires. At least one of the multiple first wires is provided with an anti-interference component.

[0013] In some examples of the present invention, the compressor power pad includes: a first compressor low-pressure power pad, a second compressor low-pressure power pad, a third compressor low-pressure power pad, and a compressor high-pressure power pad sequentially distributed along the first direction, wherein the first compressor low-pressure power pad, the second compressor low-pressure power pad, the third compressor low-pressure power pad, and the compressor high-pressure power pad are respectively provided with the compressor power chip; the compressor drive pad includes a first compressor drive pad and a second compressor drive pad spaced apart along the first direction, wherein the first compressor drive pad is located at the first compressor low-pressure power pad, the second compressor low-pressure power pad, and the third compressor low-pressure power pad. On one side of the two directions, the second compressor drive pad is located on the second side of the compressor high-pressure power pad. The first compressor drive pad and the second compressor drive pad are respectively provided with compressor drive chips. There are multiple second wires. The control terminals of the compressor power chips of the first compressor low-pressure power pad, the second compressor low-pressure power pad, and the third compressor low-pressure power pad are electrically connected to the compressor drive chip through the second wires. The control terminal of the compressor power chip of the compressor high-pressure power pad is electrically connected to the compressor drive chip through the second wires. At least one of the multiple second wires is provided with an anti-interference component.

[0014] In some examples of the present invention, the driver-side pin frame includes a plurality of PFC driver pins, the plurality of PFC driver pins being electrically connected to the PFC driver pads via a fourth wire, and the control terminal of the PFC power chip being electrically connected to one of the plurality of PFC driver pins via a third wire, so that the PFC driver chip and the PFC power chip are electrically connected via the third wire, the one of the plurality of PFC driver pins, and the corresponding fourth wire.

[0015] In some examples of the present invention, the fan power chip, the compressor power chip and the PFC power chip each have an input terminal and an output terminal, the control terminal is connected between the input terminal and the output terminal and controls the on / off state of the input terminal and the output terminal, and the output terminal of at least one of the fan power chip, the compressor power chip and the PFC power chip is provided with a magnetic alloy material.

[0016] In some examples of the present invention, the magnetic alloy material is a nanocrystalline soft magnetic alloy material or an amorphous alloy material.

[0017] In some examples of the present invention, the fan power chip, the compressor power chip, and the PFC power chip each have an input terminal and an output terminal, and the control terminal is connected between the input terminal and the output terminal and controls the on / off state of the input terminal and the output terminal; the semiconductor device further includes a fan power pin, a compressor power pin, and a PFC power pin, wherein the fan power pin and the fan power chip are electrically connected via a fifth wire, the compressor power pin and the compressor power chip are electrically connected via a sixth wire, and the PFC power pin and the PFC power chip are electrically connected via a seventh wire; wherein, there are at least two fifth wires arranged in parallel; and / or there are at least two sixth wires arranged in parallel; and / or there are at least two seventh wires arranged in parallel.

[0018] In some examples of the present invention, the diameter of the fifth conductor is d1, the skin depth of the fifth conductor is δ1, and d1 and δ1 satisfy the relationship: d1≤δ1; and / or the diameter of the sixth conductor is d2, the skin depth of the sixth conductor is δ2, and d2 and δ2 satisfy the relationship: d2≤δ2; and / or the diameter of the seventh conductor is d3, the skin depth of the seventh conductor is δ3, and d3 and δ3 satisfy the relationship: d3≤δ3.

[0019] In some examples of the present invention, the fan power pad, the compressor power pad, the PFC power pad, and the rectifier bridge pad are arranged sequentially from the first side to the second side in the first direction; or the rectifier bridge pad, the PFC power pad, the fan power pad, and the compressor power pad are arranged sequentially from the first side to the second side in the first direction; or the fan power pad, the compressor power pad, the rectifier bridge pad, and the PFC power pad are arranged sequentially from the first side to the second side in the first direction.

[0020] According to a second aspect of the present invention, a circuit board includes the semiconductor device described above.

[0021] According to a third aspect of the present invention, the electrical control box includes: the circuit board described above.

[0022] An electrical device according to a fourth aspect of the present invention includes: the above-described electrical control box.

[0023] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0024] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a partial schematic diagram of a semiconductor device from a first angle according to an embodiment of the present invention; Figure 3 This is a partial schematic diagram of a semiconductor device from a second angle according to an embodiment of the present invention; Figure 4 This is a partial schematic diagram of a semiconductor device from a third angle according to an embodiment of the present invention; Figure 5 This is a partial schematic diagram of a semiconductor device from a fourth angle according to an embodiment of the present invention; Figure 6 This is a partial schematic diagram of a semiconductor device from a fifth angle according to an embodiment of the present invention; Figure 7 This is a partial schematic diagram of a semiconductor device from a sixth angle according to an embodiment of the present invention; Figure 8 This is a partial schematic diagram of a semiconductor device from a seventh angle according to an embodiment of the present invention; Figure 9 This is a partial schematic diagram of a semiconductor device from an eighth angle according to an embodiment of the present invention; Figure 10 yes Figure 9Enlarged view of section A.

[0025] Figure label: 100. Semiconductor devices; 1. Package; 2. Substrate; 201, Fan power pad; 2011, Fan power chip; 2012, First fan low-voltage power pad; 2013, Second fan low-voltage power pad; 2014, Third fan low-voltage power pad; 2015, Fan high-voltage power pad; 202, Compressor power pad; 2021, Compressor power chip; 2022, First compressor low-pressure power pad; 2023, Second compressor low-pressure power pad; 2024, Third compressor low-pressure power pad; 2025, Compressor high-pressure power pad; 203, PFC power pad; 2031, PFC power chip; 204, rectifier bridge pad; 2041, rectifier chip; 205. Fan power pin; 206. Compressor power pin; 207. PFC power pin; 3. Driver-side pin frame; 301, Fan drive pad; 3011, Fan drive chip; 3012, First fan drive pad; 3013, Second fan drive pad; 302, Compressor drive pad; 3021, Compressor drive chip; 3022, First compressor drive pad; 3023, Second compressor drive pad; 303, PFC driver pad; 3031, PFC driver chip; 304, PFC driver pin; 4. First conductor; 5. Second conductor; 6. Third conductor; 7. Fourth conductor; 8. Fifth conductor; 9. Sixth conductor; 91. Seventh conductor; 92. Anti-interference component. Detailed Implementation

[0026] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of the present invention are described in detail below.

[0027] The following is for reference. Figures 1-10 A semiconductor device 100 according to an embodiment of the present invention is described.

[0028] Combination Figures 1-10 As shown, the semiconductor device 100 of the first aspect embodiment of the present invention has a first direction and a second direction that are perpendicular to each other, the first direction being... Figure 1 The left and right directions, the second direction is... Figure 1 The up and down directions in the middle.

[0029] The semiconductor device 100 includes a substrate 2 and a drive-side pin frame 3. Both the substrate 2 and the drive-side pin frame 3 can be disposed within a package 1, which protects the stability of the substrate 2 and the drive-side pin frame 3 within the package 1 and ensures the structural reliability of the semiconductor device 100.

[0030] Specifically, the substrate 2 includes fan power pads 201, compressor power pads 202, PFC power pads 203 and rectifier bridge pads 204 spaced apart along a first direction. This allows the fan power pads 201, compressor power pads 202, PFC power pads 203 and rectifier bridge pads 204 to be relatively independently arranged on the substrate 2, thereby reducing electromagnetic interference between the fan power pads 201, compressor power pads 202, PFC power pads 203 and rectifier bridge pads 204, and improving the anti-interference capability of the semiconductor device 100.

[0031] Furthermore, the fan power pad 201 is equipped with a fan power chip 2011, the compressor power pad 202 is equipped with a compressor power chip 2021, the PFC power pad 203 is equipped with a PFC power chip 2031, and the rectifier bridge pad 204 is equipped with a rectifier chip 2041. This ensures that the fan power chip 2011, the compressor power chip 2021, the PFC power chip 2031, and the rectifier chip 2041 each operate independently.

[0032] The fan power chip 2011, compressor power chip 2021 and PFC power chip 2031 all have control terminals, which enables precise control of each power chip, thereby improving the working efficiency of the semiconductor device 100.

[0033] For example, in the 2011 fan power chip, the fan speed can be flexibly adjusted through the control terminal to adapt to different working needs (such as automatically adjusting the air volume according to temperature changes), and unnecessary energy consumption can be reduced (running at high speed only when needed), improving the system energy efficiency ratio, and reducing operating noise (such as reducing the fan speed under low load conditions), thereby improving the user experience.

[0034] The drive-side pin frame 3 includes fan drive pads 301, compressor drive pads 302 and PFC drive pads 303 spaced apart along a first direction. The fan drive pad 301 is located on one side of the fan power pad 201 in a second direction, the compressor drive pad 302 is located on one side of the compressor power pad 202 in a second direction, and the PFC drive pad 303 is located on one side of the PFC power pad 203 in a second direction. This ensures that the fan drive pad 301, compressor drive pad 302 and PFC drive pad 303 are set independently to avoid mutual interference and thus improve working stability.

[0035] Furthermore, the fan drive pad 301 is provided with a fan drive chip 3011, the compressor drive pad 302 is provided with a compressor drive chip 3021, and the PFC drive pad 303 is provided with a PFC drive chip 3031. The control terminal of the fan drive chip 3011 and the fan power chip 2011 are electrically connected through the first wire 4. This facilitates the fan drive chip 3011 to drive the fan power chip 2011 to work normally in the form of an electrical signal through the first wire 4, thereby improving the accuracy and sensitivity of the operation.

[0036] The control terminals of the compressor drive chip 3021 and the compressor power chip 2021 are electrically connected via the second wire 5, which facilitates the compressor drive chip 3021 to drive the compressor power chip 2021 to operate normally in the form of an electrical signal via the second wire 5. The control terminals of the PFC drive chip 3031 and the PFC power chip 2031 are electrically connected via the third wire 6, which facilitates the PFC drive chip 3031 to drive the PFC power chip 2031 to operate normally in the form of an electrical signal via the third wire 6.

[0037] Furthermore, the drive-side pin frame 3 is separated from the substrate 2, which reduces the thermal impact on the drive chip.

[0038] Among them, the first wire 4, the second wire 5, and the third wire 6 can all serve as conductive paths to transmit control signals and power.

[0039] Specifically, at least one of the first conductor 4, the second conductor 5, and the third conductor 6 is provided with an anti-interference component 92. With this arrangement, when current passes through the first conductor 4, the second conductor 5, and the third conductor 6, the anti-interference component 92 can suppress high-frequency noise, thereby reducing conducted interference. It can also isolate signals of different frequencies (for mixed signal systems, such as the coexistence of analog and digital circuits), thereby preventing signal crosstalk. It can also reduce electromagnetic radiation to the external environment, improve the ability to resist external electromagnetic interference, thereby improving electromagnetic compatibility. It can also absorb voltage spikes and transient interference in the power supply to a certain extent, thereby achieving the effect of smoothing voltage fluctuations. It can also absorb and attenuate the energy of electrostatic discharge, thereby protecting downstream sensitive components (such as driver chips) from damage.

[0040] Therefore, by providing the semiconductor device 100, high-frequency electromagnetic interference can be effectively suppressed, thereby reducing high-frequency noise and improving electromagnetic compatibility.

[0041] According to some optional embodiments of the present invention, the anti-interference component 92 is a ferrite bead. A ferrite bead is an electronic component made of ferrite material. The ferrite bead has a magnetic material core inside and is wrapped with a conductive layer (usually metal) on the outside. The ferrite bead is mainly used to suppress high-frequency noise and electromagnetic interference, and its function is achieved by wires passing through the bead or being wound around it.

[0042] Specifically, ferrite beads can be used to absorb and attenuate unwanted high-frequency noise (when low-frequency current passes through, ferrite beads exhibit low impedance; however, when high-frequency current passes through, due to the magnetic loss characteristics of ferrite materials, their impedance increases significantly, which attenuates the high-frequency current and dissipates it as heat, effectively absorbing high-frequency noise), thereby protecting the circuit from electromagnetic interference and ensuring signal purity.

[0043] Furthermore, ferrite beads can reduce electromagnetic radiation to the external environment, help equipment meet stringent EMC (electromagnetic compatibility) standards, help equipment resist external electromagnetic interference, improve system stability and reliability, help smooth voltage fluctuations, reduce the impact of transient interference on sensitive circuits, and absorb and attenuate the energy of electrostatic discharge, protecting downstream sensitive components from damage.

[0044] Moreover, compared to traditional LC filters, ferrite beads have a simpler and more efficient structure, occupy less space, have lower cost, and are easier to integrate into compact designs. This allows them to replace complex filters, simplify circuit layout, save space on the PCB, and thus improve the efficiency and practicality of the semiconductor device 100.

[0045] According to some optional embodiments of the present invention, the ferrite beads are ferrite adhesive beads, manganese zinc beads, or nickel zinc beads.

[0046] Ferrite adhesive beads are magnetic components formed by mixing ferrite powder with an adhesive. Due to the use of an adhesive, this type of bead can be manufactured in various complex shapes and sizes to suit specific application requirements, thus improving design flexibility. For example, ferrite adhesive beads may be formed by mixing ferrite powder with an adhesive to create beads of a specific shape, or they may be used to connect and fix ferrite components to other components (such as wires, leads, etc.).

[0047] In detail, ferrite adhesive beads can effectively suppress the oscillation waveform of the switching transistor drive signal. The principle mainly involves the following two aspects: First, the ringing in the drive circuit is caused by parasitic parameters in the drive circuit of the switching transistor (such as MOSFET / IGBT): parasitic inductance (L) comes from PCB traces, bonding wires, etc., and parasitic capacitance (C) comes from gate-source capacitance (Ciss), Miller capacitance (Cgd), etc. When the drive signal switches rapidly, L and C form a resonant circuit, generating high-frequency oscillation (ringing). Second, the high-frequency impedance characteristics of the bead are extremely low at low frequencies (such as DC or kHz levels) (approximately like a wire), hardly affecting the DC component of the drive signal and low-frequency transmission. However, at high frequencies (such as MHz levels), the impedance rises sharply (typically reaching hundreds to thousands of Ω), creating a "blocking" effect on high-frequency noise. The bead can be considered as a series connection of a resistor (R) and an inductor (L), with R dominating at high frequencies, and energy dissipated through Joule heating. The high impedance (R) of the ferrite bead at the high-frequency resonant point is equivalent to a damping resistor, increasing the damping coefficient of the resonant circuit, reducing the Q value, and thus weakening the oscillation amplitude. The ringing amplitude decreases significantly as R increases. When high-frequency noise current flows through the ferrite bead, its resistive component (R) converts electromagnetic energy into heat energy, directly reducing the resonant energy. The ferrite bead and the capacitor (such as Ciss) in the drive circuit form a low-pass filter, attenuating high-frequency components and suppressing the excitation of the ringing frequency, thereby reducing gate oscillation and improving switching stability.

[0048] Manganese-zinc magnetic beads are magnetic beads made of ferrite materials with manganese and zinc as the main components. This embodiment is usually manufactured by sintering process. They have high initial permeability (that is, they can provide strong noise suppression effect in the low frequency band) and good electromagnetic interference suppression capability.

[0049] Nickel-zinc ferrite beads are made of ferrite materials with nickel and zinc as the main components. This embodiment is usually manufactured by sintering process. It can maintain a high impedance value in the GHz high frequency band, which is very suitable for high frequency noise suppression. Moreover, nickel-zinc ferrite beads have low loss at high frequencies.

[0050] According to some optional embodiments of the present invention, in combination Figure 7 As shown, the fan power pad 201 includes a first fan low-voltage power pad 2012, a second fan low-voltage power pad 2013, a third fan low-voltage power pad 2014 and a fan high-voltage power pad 2015 distributed sequentially along a first direction. The first fan low-voltage power pad 2012, the second fan low-voltage power pad 2013, the third fan low-voltage power pad 2014 and the fan high-voltage power pad 2015 are respectively provided with fan power chips 2011.

[0051] In other words, the low-voltage power pads 2012, 2013, 2014, and 2015 of the first fan, second fan, and third fan are arranged sequentially in the first direction. This arrangement allows the low-voltage power pads 2012, 2013, 2014, and 2015 to remain relatively independent, thus clearly defining the positions of the pads with different power ratings and preventing mutual interference. It also avoids interference with the coordinated operation of the low-voltage power pads 2012, 2013, 2014, and 2015, thereby improving the efficiency of collaborative work.

[0052] Combination Figure 2 and Figure 4 As shown, the fan drive pad 301 includes a first fan drive pad 3012 and a second fan drive pad 3013 spaced apart along a first direction. The first fan drive pad 3012 is located on one side of the second direction of the first fan low-voltage power pad 2012, the second fan low-voltage power pad 2013, and the third fan low-voltage power pad 2014. The second fan drive pad 3013 is located on one side of the second direction of the fan high-voltage power pad 2015. The first fan drive pad 3012 and the second fan drive pad 3013 are respectively provided with a fan drive chip 3011.

[0053] In other words, the first fan drive pad 3012 and the second fan drive pad 3013 are arranged sequentially in the first direction. This arrangement allows the first fan drive pad 3012 and the second fan drive pad 3013 to remain relatively independent, thus clearly defining the positions of different drive pads and preventing mutual interference. It can also avoid interference with the cooperative work between the first fan drive pad 3012 and the second fan drive pad 3013, thereby improving the efficiency of collaborative work.

[0054] Furthermore, combined Figure 7 As shown, the first low-voltage power pad 2012, the second low-voltage power pad 2013, the third low-voltage power pad 2014, and the high-voltage power pad 2015 of the fan are each equipped with a fan power chip 2011, and the first fan drive pad 3012 and the second fan drive pad 3013 are each equipped with a fan drive chip 3011. This allows the first low-voltage power pad 2012, the second low-voltage power pad 2013, the third low-voltage power pad 2014, and the high-voltage power pad 2015 of the fan to be electrically connected to the fan drive chip 3011 through the fan power chip 2011, thereby ensuring that the fan power pad 201 is connected to the fan drive pad 301.

[0055] Furthermore, combining Figure 7 As shown, there are multiple first wires 4. The control terminals of the fan power chip 2011 of the first fan low-voltage power pad 2012, the second fan low-voltage power pad 2013, and the third fan low-voltage power pad 2014 are electrically connected to the fan drive chip 3011 through the first wires 4. The control terminal of the fan power chip 2011 of the fan high-voltage power pad 2015 is electrically connected to the fan drive chip 3011 through the first wires 4.

[0056] Among them, multiple first wires 4 can respectively establish an electrical connection between the control terminal of the fan power chip 2011 of the first fan low-voltage power pad 2012, the second fan low-voltage power pad 2013, and the third fan low-voltage power pad 2014 and the fan drive chip 3011. The first wires 4 can also establish an electrical connection between the control terminal of the fan power chip 2011 of the fan high-voltage power pad 2015 and the fan drive chip 3011.

[0057] Combination Figure 7 As shown, at least one of the plurality of first conductors 4 is provided with an anti-interference component 92. This arrangement can effectively suppress the high-frequency current passing through the first conductor 4, thereby effectively suppressing high-frequency noise and electromagnetic interference during the operation of the semiconductor device 100.

[0058] According to some optional embodiments of the present invention, in combination Figure 8 As shown, the compressor power pad 202 includes a first compressor low-pressure power pad 2022, a second compressor low-pressure power pad 2023, a third compressor low-pressure power pad 2024 and a compressor high-pressure power pad 2025 distributed sequentially along a first direction. The first compressor low-pressure power pad 2022, the second compressor low-pressure power pad 2023, the third compressor low-pressure power pad 2024 and the compressor high-pressure power pad 2025 are respectively provided with compressor power chips 2021.

[0059] In other words, the low-pressure power pads 2022, 2023, 2024, and 2025 of the first compressor and the second compressor are arranged sequentially in the first direction. This arrangement allows the low-pressure power pads 2022, 2023, 2024, and 2025 to remain relatively independent, thus clearly defining the positions of the different power pads and preventing mutual interference. It also avoids interference with the cooperative operation of the low-pressure power pads 2022, 2023, 2024, and 2025, thereby improving the efficiency of collaborative work.

[0060] Combination Figure 2 and Figure 5 As shown, the compressor drive pad 302 includes a first compressor drive pad 3022 and a second compressor drive pad 3023 spaced apart along a first direction. The first compressor drive pad 3022 is located on one side of the first compressor low-pressure power pad 2022, the second compressor low-pressure power pad 2023, and the third compressor low-pressure power pad 2024 in a second direction. The second compressor drive pad 3023 is located on one side of the compressor high-pressure power pad 2025 in a second direction. The first compressor drive pad 3022 and the second compressor drive pad 3023 are respectively provided with compressor drive chips 3021.

[0061] In other words, the first compressor drive pad 3022 and the second compressor drive pad 3023 are arranged sequentially in the first direction. This arrangement allows the first compressor drive pad 3022 and the second compressor drive pad 3023 to remain relatively independent, thus clearly defining the positions of different drive pads and preventing mutual interference. It can also avoid interference with the cooperative work between the first compressor drive pad 3022 and the second compressor drive pad 3023, thereby improving the efficiency of collaborative work.

[0062] Furthermore, combining Figure 8 As shown, there are multiple second wires 5. The control terminals of the compressor power chip 2021 of the first compressor low-pressure power pad 2022, the second compressor low-pressure power pad 2023, and the third compressor low-pressure power pad 2024 are electrically connected to the compressor drive chip 3021 through the second wires 5. The control terminal of the compressor power chip 2021 of the compressor high-pressure power pad 2025 is electrically connected to the compressor drive chip 3021 through the second wires 5.

[0063] Among them, multiple second wires 5 can respectively establish an electrical connection between the control terminal of the compressor power chip 2021 of the first compressor low-pressure power pad 2022, the second compressor low-pressure power pad 2023, and the third compressor low-pressure power pad 2024 and the compressor drive chip 3021. The second wires 5 can also establish an electrical connection between the control terminal of the compressor power chip 2021 of the compressor high-pressure power pad 2025 and the compressor drive chip 3021.

[0064] Combination Figure 8 As shown, at least one of the plurality of second conductors 5 is provided with an anti-interference component 92. This arrangement can effectively suppress the high-frequency current passing through the second conductors 5, thereby effectively suppressing high-frequency noise and electromagnetic interference during the operation of the semiconductor device 100.

[0065] According to some optional embodiments of the present invention, in combination Figure 1 and Figure 6 As shown, the driver-side pin frame 3 includes multiple PFC driver pins 304. The multiple PFC driver pins 304 are electrically connected to the PFC driver pads 303 via a fourth wire 7. The control terminal of the PFC power chip 2031 is electrically connected to one of the multiple PFC driver pins 304 via a third wire 6, so that the PFC driver chip 3031 and the PFC power chip 2031 are electrically connected via the third wire 6, one of the multiple PFC driver pins 304 and the corresponding fourth wire 7.

[0066] Among them, combined Figure 9 As shown, multiple fourth wires 7 can respectively establish an electrical connection between multiple PFC drive pins 304 and PFC drive pads 303, and the third wire 6 can establish an electrical connection between one of the multiple PFC drive pins 304 and the control terminal of the PFC power chip 2031 through the third wire 6.

[0067] According to some optional embodiments of the present invention, in combination Figure 3 , Figures 7-9 As shown, the fan power chip 2011, compressor power chip 2021 and PFC power chip 2031 all have input terminals and output terminals, and the control terminal is connected between the input terminals and the output terminals. Moreover, the control terminal controls the on / off state of the input terminals and the output terminals.

[0068] Among them, the fan power chip 2011, compressor power chip 2021 and PFC power chip 2031 can quickly and accurately control the on / off status of the current or voltage from their respective input terminals to their output terminals through their own control terminals, thereby achieving precise management of energy transmission. Moreover, this arrangement of integrating the control terminal, input terminal and output terminal on the same chip can reduce the need for external components, simplify the overall design, and facilitate fault diagnosis and maintenance, thereby reducing long-term operating costs.

[0069] Furthermore, by precisely controlling the switching timing of the power chip, energy loss during the turn-on and turn-off processes can be minimized (that is, the power channel is only turned on when needed to avoid unnecessary energy waste), thereby improving the overall system's energy efficiency ratio.

[0070] For example, the PFC power chip 2031 can be a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). A MOSFET is a voltage-controlled device that operates by regulating the current between the source and drain through the gate voltage. A typical MOSFET mainly consists of a gate, source, and drain. The gate (i.e., the control terminal) is the key electrode used to control whether the MOSFET is turned on or off. By applying an appropriate voltage to the gate, a conductive path can be formed between the source and drain. The source (i.e., the input terminal) is a terminal where current flows in or out (e.g., in an enhancement-mode MOSFET, when there is insufficient gate voltage, the current between the source and drain is blocked; while when there is sufficient gate voltage, current can flow from the source to the drain). The drain (i.e., the output terminal) is another terminal where current flows in or out; together with the source, it forms the main current path, allowing current to flow when the MOSFET is turned on. The source and drain are the input and output terminals, respectively. They are connected to the corresponding pins of the power supply, load, or other circuit components. These connection points are physically connected on the PCB through pads. The gate is the control terminal. When the voltage between the gate and the source reaches a certain threshold, the MOSFET turns on; otherwise, it turns off. This gate voltage signal is usually provided and controlled by the driver chip.

[0071] For example, the PFC power chip 2031 can be an IGBT (Insulated-Gate Bipolar Transistor), which is also a voltage-controlled device but has a stronger current-driving capability. A typical IGBT mainly includes a gate, a collector, and an emitter. The gate (i.e., the control terminal) is used to control the IGBT's conduction and cutoff. By applying a positive voltage to the gate, the IGBT can be turned on, forming a low-impedance path between the collector and the emitter. The collector (i.e., the input terminal) is the main entry point for current. When the IGBT is turned on, current flows from the collector to the emitter. The emitter (i.e., the output terminal) is the main exit point for current. It, together with the collector, forms the main current path, allowing current to flow when the IGBT is turned on.

[0072] Optionally, the PFC power chip 2031 includes a PFC power switch chip and a PFC diode. The PFC power switch chip and PFC diode are components of the PFC circuit, which adjusts the power factor of the DC power supply and outputs the adjusted DC power. The PFC power switch chip can be composed of an insulated-gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and freewheeling diode onto a single chip).

[0073] Furthermore, at least one of the output terminals of the fan power chip 2011, the compressor power chip 2021, and the PFC power chip 2031 is provided with a magnetic alloy material. The magnetic alloy material can absorb and shield high-frequency noise, reduce electromagnetic radiation, thereby reducing electromagnetic interference to electronic equipment. It can also help the power chip resist the influence of external electromagnetic fields, protect internal circuits from external interference, thereby improving the electromagnetic compatibility of the semiconductor device 100. It can also effectively reduce parasitic inductance and parasitic capacitance, especially in high-frequency applications, which helps improve signal integrity and power transmission efficiency, thus improving the electrical performance of the power module.

[0074] Furthermore, magnetic alloys can be directly integrated into the output of power chips, thereby reducing the need for external components, simplifying circuit design, and this integrated design can also save PCB area, reduce the number of connection points, and reduce assembly complexity.

[0075] Specifically, the magnetic alloy material is a nanocrystalline soft magnetic alloy material or an amorphous alloy material.

[0076] Nanocrystalline soft magnetic alloys are composed of nanoscale grains, typically ranging from 10 to 50 nanometers in size. This fine grain structure endows the material with excellent soft magnetic properties. Due to their unique microstructure, nanocrystalline soft magnetic alloys possess high initial permeability, low coercivity, and high saturation magnetic induction. This effectively absorbs and shields high-frequency noise, reducing electromagnetic radiation to the external environment. Simultaneously, it prevents external interference from affecting internal circuits, thereby reducing electromagnetic interference, enhancing anti-interference capabilities, and ultimately improving electromagnetic compatibility.

[0077] Furthermore, materials with high initial permeability can achieve the same magnetic flux density with a smaller driving current, reducing unnecessary energy consumption, thereby improving energy efficiency and reducing the operating cost of the semiconductor device 100.

[0078] According to some optional embodiments of the present invention, the fan power chip 2011, the compressor power chip 2021 and the PFC power chip 2031 all have an input terminal and an output terminal, and a control terminal is connected between the input terminal and the output terminal, and the control terminal controls the on / off state of the input terminal and the output terminal.

[0079] Among them, the fan power chip 2011, compressor power chip 2021, and PFC power chip 2031 can quickly and accurately control the on / off status of the current or voltage from their respective input to output terminals through their own control terminals, thereby achieving precise management of energy transmission. For example, by precisely controlling the switching timing of the power chips, the power channel can be turned on only when needed, avoiding unnecessary energy waste and thus improving the energy efficiency ratio of the power chips.

[0080] Nanocrystalline soft magnetic alloys exhibit high saturation magnetic flux density and low coercivity over a wide frequency range (10kHz to 30MHz), which can suppress current surge noise and broadband oscillations caused by high di / dt (>1000A / μs) at the output. The permeability of nanocrystalline materials (μr≈5×10⁻⁶) 4 -1×10 5 It maintains a flat frequency response within the 10kHz-30MHz range, providing wideband magnetic shielding. In the low-frequency range (10-100kHz), high saturation magnetic flux density (Bs≈1.2T) suppresses magnetic flux saturation caused by high di / dt (>1000A / μs), reducing magnetic field distortion caused by sudden current changes. In the high-frequency range (1-30MHz), low coercivity (Hc<1A / m) allows magnetic domains to respond quickly to high-frequency magnetic field changes, absorbing resonant energy. The embodiment in this case can reduce output voltage spikes by 30%-50% and electromagnetic interference radiation intensity by approximately 10dBμV / m.

[0081] According to some optional embodiments of the present invention, in combination Figures 7-9 As shown, the semiconductor device 100 also includes a fan power pin 205, a compressor power pin 206, and a PFC power pin 207. The fan power pin 205 and the fan power chip 2011 are electrically connected via a fifth wire 8, the compressor power pin 206 and the compressor power chip 2021 are electrically connected via a sixth wire 9, and the PFC power pin 207 and the PFC power chip 2031 are electrically connected via a seventh wire 91.

[0082] Specifically, in combination Figures 7-9As shown, the fifth wire 8, the sixth wire 9, and the seventh wire 91 can all serve as conductive paths for transmitting control signals and power. The fifth wire 8 can establish an electrical connection between the fan power pin 205 and the fan power chip 2011, the sixth wire 9 can establish an electrical connection between the compressor power pin 206 and the compressor power chip 2021, and the seventh wire 91 can establish an electrical connection between the PFC power pin 207 and the PFC power chip 2031.

[0083] Alternatively, there may be at least two fifth conductors 8, and at least two fifth conductors 8 may be connected in parallel. Compared to a single fifth conductor 8, multiple fifth conductors 8 connected in parallel increase the total conductive cross-sectional area, thereby reducing the total resistance. This helps reduce energy loss due to current flowing through the fifth conductors 8 and effectively reduces parasitic inductance (since inductance is directly proportional to conductor length and inversely proportional to the number of parallel conductors). Multiple fifth conductors 8 connected in parallel can also distribute a larger current load, allowing for higher operating currents without overheating or damaging the conductors. It also helps to distribute current more evenly, avoiding overload problems caused by current concentration in a single fifth conductor 8. Multiple parallel fifth conductors 8 reduce the loop area, thereby reducing magnetic field radiation caused by current flow, helping to suppress electromagnetic interference, effectively reducing electromagnetic noise interference, and ensuring signal integrity.

[0084] For example, connecting N wires in parallel can reduce the total inductance L_total≈L_single / N², and for example, connecting 2 wires can reduce the parasitic inductance from 20nH to 5nH; the path length is ≤5mm, which limits the loop area (A=L×d) and reduces the inductance (L∝A).

[0085] Alternatively, there may be at least two sixth conductors 9, and at least two sixth conductors 9 may be connected in parallel. In this case, compared to a single sixth conductor 9, multiple sixth conductors 9 connected in parallel are equivalent to increasing the total conductive cross-sectional area. This reduces the total resistance, thereby reducing energy loss due to current flowing through the sixth conductors 9. It also effectively reduces parasitic inductance and suppresses electromagnetic interference, thus reducing electromagnetic noise and improving electromagnetic compatibility.

[0086] Alternatively, there may be at least two seventh conductors 91, and at least two seventh conductors 91 may be connected in parallel. Compared to a single seventh conductor 91, multiple seventh conductors 91 connected in parallel increase the total conductive cross-sectional area, thereby reducing the total resistance. This helps reduce energy loss caused by current flowing through the seventh conductors 91 and also effectively reduces parasitic inductance (since inductance is directly proportional to conductor length and inversely proportional to the number of parallel conductors). Multiple parallel seventh conductors 91 reduce the loop area, thereby reducing magnetic field radiation caused by current flow, which helps suppress electromagnetic interference, effectively reducing electromagnetic noise interference and ensuring signal purity.

[0087] Alternatively, the diameter of the fifth conductor 8 is d1, and the skin depth of the fifth conductor 8 is δ1, where d1 and δ1 satisfy the relationship: d1≤δ1. In high-frequency applications, the skin effect of a conductor refers to the phenomenon that as the frequency increases, current tends to concentrate on the surface of the conductor, while almost no current flows through the center. This phenomenon leads to an increase in the effective resistance of the conductor, resulting in additional energy loss and heat generation.

[0088] Optionally, the diameter of each conductor is ≤ the skin depth ( mm, at 100MHz, δ≈0.066mm), for example, the skin effect is negligible with a wire diameter of 0.1mm at 100MHz; moreover, multiple strands of wire can shunt high-frequency current, which can reduce the current density and ohmic loss of a single wire.

[0089] As arranged above, the diameter of the fifth conductor 8 is designed to not exceed the skin depth of the fifth conductor 8. When high-frequency current passes through the fifth conductor 8, the current flows through the surface layer of the fifth conductor 8. If the diameter of the fifth conductor 8 exceeds the skin depth, the current can only utilize a part of the conductor, resulting in an increase in effective resistance. Therefore, controlling the diameter of the fifth conductor 8 within the skin depth can ensure that the current is evenly distributed across the entire cross-section of the fifth conductor 8, thereby reducing AC resistance, reducing power loss, and thus improving working efficiency.

[0090] Alternatively, the diameter of the sixth conductor 9 is d2, and the skin depth of the sixth conductor 9 is δ2, where d2 and δ2 satisfy the relationship: d2≤δ2.

[0091] As arranged above, the diameter of the sixth conductor 9 is designed to not exceed the skin depth of the sixth conductor 9. When a high-frequency current passes through the sixth conductor 9, the current flows through the surface layer of the sixth conductor 9. If the diameter of the sixth conductor 9 exceeds the skin depth, the current can only utilize a part of the conductor, resulting in an increase in effective resistance. Therefore, controlling the diameter of the sixth conductor 9 within the skin depth can ensure that the current is evenly distributed across the entire cross-section of the sixth conductor 9, thereby reducing AC resistance, reducing power loss, and effectively reducing the skin effect.

[0092] Alternatively, the diameter of the seventh conductor 91 is d3, and the skin depth of the seventh conductor 91 is δ3, where d3 and δ3 satisfy the relationship: d3≤δ3.

[0093] As arranged above, the diameter of the seventh conductor 91 is designed to not exceed the skin depth of the seventh conductor 91. When high-frequency current passes through the seventh conductor 91, the current flows through the surface layer of the seventh conductor 91. If the diameter of the seventh conductor 91 exceeds the skin depth, the current can only utilize a part of the conductor, resulting in an increase in effective resistance. Therefore, controlling the diameter of the seventh conductor 91 within the skin depth can ensure that the current is evenly distributed across the entire cross-section of the seventh conductor 91, thereby reducing AC resistance, reducing power loss, and thus improving working efficiency.

[0094] According to some optional embodiments of the present invention, the fan power pad 201, the compressor power pad 202, the PFC power pad 203 and the rectifier bridge pad 204 are arranged sequentially from the first side to the second side in the first direction.

[0095] The above arrangement allows for a more regular and rational arrangement of different power pads, which shortens the current path, thereby reducing parasitic inductance and resistance, avoiding voltage spikes and ringing, and improving circuit stability and efficiency. It also helps maintain the continuity and consistency of the signal path, reduces reflections and crosstalk, and ensures the quality of signal transmission. Furthermore, the power pads arranged sequentially along the first direction can distribute heat more evenly across the entire surface of the package 1, avoiding local overheating, which helps extend device life and improve reliability. It can also simplify the manufacturing process and improve the efficiency of automated production.

[0096] Alternatively, the rectifier bridge pad 204, PFC power pad 203, fan power pad 201, and compressor power pad 202 are arranged sequentially from the first side to the second side in the first direction.

[0097] The above arrangement allows for a more regular and rational arrangement of different power pads, which shortens the current path, thereby reducing parasitic inductance and resistance, avoiding voltage spikes and ringing, and improving circuit stability and efficiency. It also helps maintain the continuity and consistency of the signal path, reduces reflections and crosstalk, and ensures the quality of signal transmission. Furthermore, the power pads arranged sequentially along the first direction can distribute heat more evenly across the entire surface of the package 1, avoiding local overheating, which helps extend device life and improve reliability. It can also simplify the manufacturing process and improve the efficiency of automated production.

[0098] Among them, the power pads arranged along the first direction provide a clear position reference for the test probes, which facilitates online testing and functional testing. The clear pad layout helps to quickly locate the fault point and perform necessary repair or replacement operations, reducing maintenance difficulty and time costs.

[0099] In addition, multiple rectifier diodes form a rectifier bridge, for example, by combining four spaced rectifier diodes. The rectifier bridge composed of four rectifier diodes converts the input AC power into DC power for output.

[0100] Alternatively, the fan power pad 201, compressor power pad 202, rectifier bridge pad 204 and PFC power pad 203 are arranged sequentially from the first side to the second side in the first direction.

[0101] The above arrangement allows for a more regular and rational arrangement of different power pads, which shortens the current path, thereby reducing parasitic inductance and resistance, avoiding voltage spikes and ringing, and thus improving the stability and efficiency of the circuit. Moreover, the power pads arranged sequentially along the first direction can distribute heat more evenly across the entire surface of the package 1, avoiding local overheating, which helps to extend device life and improve reliability, and can also simplify the manufacturing process.

[0102] In summary, by using high-density packaging for multifunctional power pads, the area occupied by electromagnetic interference suppression circuits and discrete components can be effectively reduced, thereby improving space utilization and facilitating compact design.

[0103] According to a second aspect of the present invention, the circuit board includes the semiconductor device 100 of the above-described embodiments. Thus, the circuit board having the semiconductor device 100 can effectively suppress high-frequency electromagnetic interference and improve electromagnetic compatibility.

[0104] According to a third aspect of the present invention, the control box includes the circuit board of the above embodiment, and the control box having the circuit board can effectively reduce high-frequency noise.

[0105] The electrical device according to a fourth aspect embodiment of the present invention includes the electrical control box described in the above embodiment. This configuration can improve the operational stability of the electrical device and enhance its market competitiveness. The electrical device can be an outdoor unit of an air conditioner.

[0106] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0107] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0108] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0109] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

[0110] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0111] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, The semiconductor device has a first direction and a second direction perpendicular to each other, the semiconductor device comprising: The substrate includes fan power pads, compressor power pads, PFC power pads, and rectifier bridge pads spaced apart along the first direction. The fan power pads are provided with fan power chips, the compressor power pads are provided with compressor power chips, the PFC power pads are provided with PFC power chips, and the rectifier bridge pads are provided with rectifier chips. The fan power chip, the compressor power chip, and the PFC power chip all have control terminals. A drive-side pin frame includes fan drive pads, compressor drive pads, and PFC drive pads spaced apart along a first direction. The fan drive pads are located on one side of the fan power pads in a second direction, the compressor drive pads are located on one side of the compressor power pads in a second direction, and the PFC drive pads are located on one side of the PFC power pads in a second direction. Each fan drive pad is equipped with a fan drive chip, each compressor drive pad is equipped with a compressor drive chip, and each PFC drive pad is equipped with a PFC drive chip. The control terminals of the fan drive chip and the fan power chip are electrically connected via a first wire, the control terminals of the compressor drive chip and the compressor power chip are electrically connected via a second wire, and the control terminals of the PFC drive chip and the PFC power chip are electrically connected via a third wire. At least one of the first conductor, the second conductor, and the third conductor is provided with an anti-interference component.

2. The semiconductor device according to claim 1, characterized in that, The anti-interference component is a ferrite magnetic bead.

3. The semiconductor device according to claim 2, characterized in that, The ferrite beads are ferrite adhesive beads, manganese zinc beads, or nickel zinc beads.

4. The semiconductor device according to claim 1, characterized in that, The fan power pad includes: a first fan low-voltage power pad, a second fan low-voltage power pad, a third fan low-voltage power pad and a fan high-voltage power pad distributed sequentially along the first direction, wherein the first fan low-voltage power pad, the second fan low-voltage power pad, the third fan low-voltage power pad and the fan high-voltage power pad are respectively provided with the fan power chip. The fan drive pad includes a first fan drive pad and a second fan drive pad that are spaced apart along the first direction. The first fan drive pad is located on one side of the first low-voltage power pad, the second low-voltage power pad, and the third low-voltage power pad in the second direction. The second fan drive pad is located on one side of the high-voltage power pad in the second direction. The first fan drive pad and the second fan drive pad are respectively provided with a fan drive chip. The first wires are multiple, and the control terminals of the fan power chips of the first fan low-voltage power pad, the second fan low-voltage power pad, and the third fan low-voltage power pad are electrically connected to the fan drive chip through the first wires. The control terminal of the fan power chip of the fan high-voltage power pad is electrically connected to the fan drive chip through the first wires. At least one of the multiple first wires is provided with an anti-interference component.

5. The semiconductor device according to claim 1, characterized in that, The compressor power pad includes: a first compressor low-pressure power pad, a second compressor low-pressure power pad, a third compressor low-pressure power pad and a compressor high-pressure power pad distributed sequentially along the first direction, wherein the first compressor low-pressure power pad, the second compressor low-pressure power pad, the third compressor low-pressure power pad and the compressor high-pressure power pad are respectively provided with the compressor power chip; The compressor drive pad includes a first compressor drive pad and a second compressor drive pad that are spaced apart along the first direction. The first compressor drive pad is located on one side of the second direction of the first compressor low-pressure power pad, the second compressor low-pressure power pad, and the third compressor low-pressure power pad. The second compressor drive pad is located on one side of the second direction of the compressor high-pressure power pad. The first compressor drive pad and the second compressor drive pad are respectively provided with compressor drive chips. The second wires are multiple, and the control terminals of the compressor power chips of the first compressor low-pressure power pad, the second compressor low-pressure power pad, and the third compressor low-pressure power pad are respectively electrically connected to the compressor drive chip through the second wires. The control terminal of the compressor power chip of the compressor high-pressure power pad is electrically connected to the compressor drive chip through the second wires. At least one of the multiple second wires is provided with an anti-interference component.

6. The semiconductor device according to claim 1, characterized in that, The drive-side pin frame includes multiple PFC drive pins, each of which is electrically connected to the PFC drive pad via a fourth wire. The control terminal of the PFC power chip is electrically connected to one of the multiple PFC drive pins via a third wire, so that the PFC drive chip and the PFC power chip are electrically connected via the third wire, the one of the multiple PFC drive pins, and the corresponding fourth wire.

7. The semiconductor device according to claim 1, characterized in that, The fan power chip, the compressor power chip, and the PFC power chip each have an input terminal and an output terminal. The control terminal is connected between the input terminal and the output terminal and controls the on / off state of the input terminal and the output terminal. At least one of the fan power chip, the compressor power chip, and the PFC power chip has a magnetic alloy material at its output terminal.

8. The semiconductor device according to claim 7, characterized in that, The magnetic alloy material is a nanocrystalline soft magnetic alloy material or an amorphous alloy material.

9. The semiconductor device according to claim 1, characterized in that, The fan power chip, the compressor power chip, and the PFC power chip all have an input terminal and an output terminal. The control terminal is connected between the input terminal and the output terminal and controls the on / off state of the input terminal and the output terminal. The semiconductor device further includes a fan power pin, a compressor power pin, and a PFC power pin. The fan power pin and the fan power chip are electrically connected via a fifth wire, the compressor power pin and the compressor power chip are electrically connected via a sixth wire, and the PFC power pin and the PFC power chip are electrically connected via a seventh wire. Wherein, the fifth conductor is at least two and arranged in parallel; and / or The sixth conductor is at least two and connected in parallel; and / or The seventh conductor consists of at least two conductors connected in parallel.

10. The semiconductor device according to claim 9, characterized in that, The diameter of the fifth conductor is d1, and the skin depth of the fifth conductor is δ1. d1 and δ1 satisfy the relationship: d1≤δ1; and / or The diameter of the sixth conductor is d2, and the skin depth of the sixth conductor is δ2. d2 and δ2 satisfy the relationship: d2≤δ2; and / or The diameter of the seventh conductor is d3, and the skin depth of the seventh conductor is δ3. d3 and δ3 satisfy the relationship: d3≤δ3.

11. The semiconductor device according to claim 1, characterized in that, The fan power pad, the compressor power pad, the PFC power pad, and the rectifier bridge pad are arranged sequentially from the first side to the second side in the first direction; or The rectifier bridge pads, the PFC power pads, the fan power pads, and the compressor power pads are arranged sequentially from the first side to the second side in the first direction; or The fan power pad, the compressor power pad, the rectifier bridge pad, and the PFC power pad are arranged sequentially from the first side to the second side in the first direction.

12. A circuit board, characterized in that, include: The semiconductor device according to any one of claims 1-11.

13. An electrical control box, characterized in that, include: The circuit board according to claim 12.

14. An electrical appliance, characterized in that, include: The electrical control box as claimed in claim 13.

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