Processing container, processing apparatus, and method for manufacturing semiconductor device

Abstract

Provided is a technique provided with: an inner tube having an opening for discharging a processing gas from a processing chamber, and a first buffer part in which a first supply part for supplying the processing gas to the processing chamber is disposed; an outer tube disposed on the outside of the inner tube; and a second buffer part which is located on the opposite side of the opening along the outer tube with the first buffer part interposed therebetween, is formed so as to be surrounded by the inner tube, the outer tube, and the side wall of the first buffer part, and is configured so as to have a width of a first gap formed between the outer wall of the first buffer part and the outer tube in plan view, and a width of a second gap formed between the outer wall of the first buffer part and the outer tube. The width of the second gap is narrower than the width of the second gap formed between the inner pipe and the outer pipe from the first buffer part to the opening part.

Description

Technical Field

[0001] This disclosure relates to methods for manufacturing processing containers, processing devices, and semiconductor devices. Background Technology

[0002] As a step in the manufacturing process of a semiconductor device, a substrate processing step is sometimes performed where a raw material gas or a reaction gas is supplied to a substrate to form a film on the substrate. At this time, byproducts may be deposited due to the retention caused by the gas circulation of the exhaust gas discharged from the processing chamber, thereby generating particulate matter (for example, see Japanese Patent Publication No. 2019-062053 and International Publication No. 2006-080801). Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] This disclosure provides a technique for suppressing the recirculation of exhaust gas discharged from the processing chamber.

[0005] Methods for solving problems

[0006] According to one aspect of this disclosure, a technology is provided that possesses:

[0007] The inner tube has an opening for discharging processing gas from the processing chamber and a first buffer section having a first supply section for supplying the processing gas to the processing chamber disposed inside.

[0008] An outer tube, which is disposed outside the aforementioned inner tube; and

[0009] The second buffer section is located on the opposite side of the opening along the outer tube, separated from the first buffer section, and is formed to be surrounded by the sidewalls of the inner tube, the outer tube, and the first buffer section.

[0010] The first gap formed between the outer wall of the first buffer portion and the outer tube is configured such that, when viewed from above, the width of the first gap is narrower than the width of the second gap formed between the inner tube and the outer tube from the first buffer portion to the opening.

[0011] The effects of the invention

[0012] According to this disclosure, the recirculation of exhaust gas discharged from the processing chamber can be suppressed. Attached Figure Description

[0013] Figure 1 This is a schematic configuration diagram of a processing apparatus according to one embodiment of the present disclosure.

[0014] Figure 2 This is a cross-sectional view of a substrate processing furnace used in a processing apparatus according to one embodiment of the present disclosure.

[0015] Figure 3 yes Figure 2 A magnified view of the part indicated by the middle arrow 3X.

[0016] Figure 4 This is an enlarged view of the second supply section of the modified example (and...). Figure 3 (Corresponding enlarged image).

[0017] Figure 5 This is an enlarged view of the second supply section, representing another variation (and...). Figure 3 (Corresponding enlarged image).

[0018] Figure 6 This is a block diagram showing the controller of a processing apparatus according to one embodiment of the present disclosure.

[0019] Figure 7 This is a top longitudinal sectional view of the substrate processing furnace used in a processing apparatus according to another embodiment of this disclosure.

[0020] Figure 8 This is a cross-sectional view of the substrate processing furnace used in the processing apparatus of another embodiment of the present disclosure (and...). Figure 2 (Corresponding cross-sectional view). Detailed Implementation

[0021] The following is mainly based on Figures 1 to 3 and Figure 6 This description will now cover one embodiment of the present disclosure. Furthermore, the accompanying drawings used in the following description are illustrative, and the dimensional relationships and scales of the elements in the drawings may not necessarily correspond to actual dimensions. Additionally, even among multiple drawings, the dimensional relationships and scales of the elements may not be consistent.

[0022] As an example of the processing apparatus disclosed herein, the substrate processing apparatus 10 of this embodiment includes a processing furnace 202. The processing furnace 202 has a heater 207 as a heating means. The heater 207 is cylindrical and is vertically mounted by being supported by a heater base (not shown). The heater 207 also functions as an activation mechanism that uses heat to activate the processing gas.

[0023] The reaction tube 203, which constitutes the processing container, is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC).

[0024] like Figure 2 As shown, the reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 arranged around the inner tube. The inner tube 12 and the outer tube 14 are arranged concentrically, forming a gap S between the inner tube 12 and the outer tube 14.

[0025] like Figure 1 As shown, the inner tube 12 is open at the lower end and closed at the upper end, and has a flat wall. That is, the inner tube 12 is formed into a topped cylindrical shape. Similarly, the outer tube 14 is also open at the lower end and closed at the upper end, and has a flat wall. That is, the outer tube 14 is also formed into a topped cylindrical shape.

[0026] like Figure 2 As shown, a nozzle configuration chamber 222 is provided in the gap S formed between the inner tube 12 and the outer tube 14.

[0027] Gas supply slits 235a, 235b, and 235c, which serve as inlets, are provided on the peripheral wall of the inner tube 12.

[0028] like Figure 2 As shown, an opening 236 is provided in the peripheral wall of the inner tube 12 at the position facing the inlet 235a, 235b, and 235c. In addition, a second exhaust port 237, which is smaller in opening area than the opening 236, is provided at the lower part of the opening 236 as an outlet.

[0029] like Figure 1 As shown, the interior of the inner tube 12 forms a processing chamber 201. The processing chamber 201 processes the wafer 200, which serves as a substrate.

[0030] The processing chamber 201 can house the wafer boat 217, which serves as a substrate holder and can hold the wafer 200 in a horizontal position with multiple segments arranged vertically. The inner tube 12 surrounds the housed wafer 200.

[0031] The lower end of the reaction tube 203 is supported by a cylindrical manifold 226. The manifold 226 can be made of a metal such as a nickel alloy or stainless steel, or a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). A flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is mounted and supported on this flange. An airtight component 220, such as an O-ring, is sandwiched between the flange and the lower end of the outer tube 14. The airtight component 220 maintains an airtight interior for the reaction tube 203.

[0032] At the lower end of the manifold 226, a sealing cap 219 is airtightly installed via an O-ring or other airtight component 220. The cap 219 airtightly blocks the lower end opening of the reaction tube 203, i.e., the opening of the manifold 226. The cap 219 is made of metals such as nickel alloy or stainless steel and is formed in a circular plate shape. The cap 219 may also be constructed by covering its outer side with a heat-resistant material such as quartz or SiC.

[0033] A crystal boat support platform 218 for supporting the crystal boat 217 is provided on the cover 219. The crystal boat support platform 218 is made of heat-resistant materials such as quartz and SiC, and functions as a heat insulation part.

[0034] The crystal boat 217 is mounted on the crystal boat support platform 218. The crystal boat 217 is made of a heat-resistant material such as quartz or SiC. The crystal boat 217 has a base plate (not shown) fixed to the crystal boat support platform 218 and a top plate disposed above the base plate. Multiple support columns are provided between the base plate and the top plate.

[0035] The crystal boat 217 holds multiple wafers 200 that are being processed within the processing chamber 201 inside the inner tube 12. The multiple wafers 200 are supported by pillars of the crystal boat 217, maintaining a horizontal orientation and center alignment while being spaced at constant intervals between them. The loading direction of the multiple wafers 200 is the same as the axis of the reaction tube 203.

[0036] A boat rotation mechanism 267 for rotating the boat is provided on the lower side of the cover 219. The rotation shaft 265 of the boat rotation mechanism 267 passes through the cover 219 and is connected to the boat support platform 218. By rotating the rotation shaft 265 of the boat rotation mechanism 267, the boat 217 is rotated via the boat support platform 218. By rotating the boat 217, the wafer 200 held by the boat 217 also rotates.

[0037] The cover 219 is raised and lowered vertically by a crystal boat lift 115, which is located outside the reaction tube 203 and serves as a lifting mechanism. The lift 115 moves the crystal boat 217 into or out of the processing chamber 201 via the cover 219.

[0038] In the manifold 226, nozzle support portions 350a to 350e are provided to support gas nozzles 340a to 340e that supply gas to the processing chamber 201 (only gas nozzles 340a and nozzle support portions 350a are shown in the figure).

[0039] In this embodiment, five nozzle support portions 350a to 350e are provided. The nozzle support portions 350a to 350c are made of materials such as nickel alloy or stainless steel (only nozzle support portion 350a is shown).

[0040] Gas supply pipes 310a to 310c, which supply gas to the processing chamber 201, are respectively connected to one end of nozzle supports 350a to 350e (only nozzle support 350a is shown). In addition, the nozzle supports connected to gas nozzles 340d and 340e are integrated by branch pipes (not shown) and connected to gas supply pipe 310d.

[0041] Gas nozzles 340a to 340d are respectively connected to the other end of nozzle supports 350a to 350e (only nozzle support 350a and gas nozzle 340a are shown in the figure). Gas nozzles 340a to 340e are made of heat-resistant materials such as quartz and SiC.

[0042] In the gas supply pipe 310a, from upstream, there are respectively a raw material gas supply source 360a for supplying raw material gas, a mass flow controller (MFC) 320a as a flow controller, and a valve 330a as an on / off valve.

[0043] In the gas supply pipe 310b, a raw material gas supply source 360b, an MFC 320b, and a valve 330b are sequentially arranged from upstream.

[0044] In the gas supply pipe 310c, an inert gas supply source 360c, an MFC 320c, and a valve 330c are sequentially arranged from upstream.

[0045] In the gas supply pipe 310d, inert gas supply source 360d, MFC 320d and valve 330d are arranged sequentially from upstream.

[0046] A gas supply pipe 310e for supplying inert gas is connected downstream of valve 330a in gas supply pipe 310a. In gas supply pipe 310e, inert gas supply source 360e, MFC 320e and valve 330e are arranged sequentially from upstream.

[0047] Downstream of valve 330b in gas supply pipe 310b, gas supply pipe 310f for supplying inert gas is connected. In gas supply pipe 310f, inert gas supply source 360f, MFC 320f and valve 330f are sequentially arranged from upstream.

[0048] In addition, the inert gas supply sources 360c to 360e, which supply inert gas, are connected to a common supply source.

[0049] Examples of processing gases supplied from gas supply pipe 310a include reactant gases. Additionally, examples of processing gases supplied from gas supply pipe 310b include gases containing silicon (Si) sources or gases containing Si-containing raw materials vaporized into a gaseous state. Examples of inert gases supplied from each gas supply pipe 310c to 310f include nitrogen gas (N2). Furthermore, it goes without saying that the raw materials are not limited to Si.

[0050] An exhaust port 230 is provided inside the outer tube 14 of the reaction tube 203. The exhaust port 230 is formed below the second exhaust port 237 and is connected to the exhaust pipe 231.

[0051] The vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245, which detects the pressure inside the processing chamber 201, and an APC (Automatic Pressure Controller) valve 244, which acts as a pressure regulator. The exhaust pipe 231, downstream of the vacuum pump 246, is connected to an exhaust gas treatment device (not shown). Thus, by controlling the output of the vacuum pump 246 and the opening of the valve 244, the pressure in the processing chamber 201 is evacuated to a predetermined pressure (vacuum level).

[0052] In addition, APC valve 244 is an on / off valve that opens / closes the valve to vent vacuum from the processing chamber 201 and stops vent vacuum from the processing chamber 201. Furthermore, by adjusting the valve opening, the conductivity and pressure of the processing chamber 201 can be further adjusted.

[0053] A temperature sensor (not shown) is installed inside the reaction tube 203 as a temperature detector. By adjusting the power supplied to the heater 207 based on the temperature information detected by this temperature sensor, the temperature of the processing chamber 201 can be made close to the desired temperature distribution.

[0054] In the aforementioned processing furnace 202, a multi-section wafer boat 217, carrying multiple wafers 200 to be processed in batches, is inserted into the processing chamber 201 via a wafer boat support platform 218. Then, the wafers 200 inserted into the processing chamber 201 are heated to a predetermined temperature by a heater 207 and subjected to a predetermined process.

[0055] Next, refer to Figure 2 , Figure 3 and Figure 6 Explain the structure of reaction tube 203.

[0056] like Figure 2 As shown, a plurality of gas supply slits 235a to 235c are formed on the inner tube 12 for supplying gas to the processing chamber 201. The gas supply slits 235a to 235c connect the nozzle configuration chamber 222 to the processing chamber 201.

[0057] In the nozzle configuration chamber 222, an annular gap S is formed between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14. The nozzle configuration chamber 222 includes a first chamber 222a, a second chamber 222b, and a third chamber 222c. Each chamber 222a to 222c is arranged along the circumferential direction of the annular gap S.

[0058] In the first chamber 222a, the front wall of the center side of the reaction tube 203 is formed by the peripheral wall of the inner tube 12, and the side wall in the circumferential direction is formed by the first partition 18a and the second partition 18b, and the outer tube 14 side is closed by the connecting wall 18e.

[0059] In the second chamber 222b, the front wall of the center side of the reaction tube 203 is formed by the peripheral wall of the inner tube 12, the side wall in the circumferential direction is formed by the second partition 18b and the third partition 18c, and the outer tube 14 side is closed by the connecting wall 18e.

[0060] Between the connecting wall 18e and the peripheral wall of the outer tube 14, a connecting passage 222e is formed, connecting the first chamber 222a and the third chamber 222c.

[0061] In the third chamber 222c, the front wall of the center side of the reaction tube 203 is formed by the peripheral wall of the inner tube 12, the side wall in the circumferential direction is formed by the third partition 18c and the fourth partition 18d, and the outer tube 14 side is closed by the connecting wall 18e.

[0062] Each partition 18a-18d and connecting wall 18e are formed from the upper end to the lower end of the inner tube 12. Thus, each chamber 222a-222c is open at its lower end and closed at its upper end by a wall that forms the top surface of the inner tube 12. That is, each chamber 222a-222c is formed with a top shape.

[0063] like Figure 2 As shown, each of the chambers 222a to 222c of the nozzle configuration chamber 222 is provided with a gas nozzle 340a to 340c extending in the vertical direction.

[0064] like Figure 2 As shown, on the peripheral wall of the inner tube 12, first buffer portions 12b are provided on both sides of the opening 236, with the inner peripheral surface 12a receding outward. These first buffer portions 12b are formed along the vertical direction. Specifically, the first buffer portion 12b has an outer wall 70 that is curved into an arc shape in the top view and a pair of side walls 72, 74.

[0065] The outer wall 70 of the first buffer section 12b is configured to be concentric with the peripheral wall constituting the outer tube 14. A pair of side walls 72 and 74 are arranged opposite each other in the circumferential direction of the outer tube 14. The side wall 72 is located on the nozzle arrangement chamber 222 side. In addition, the side wall 74 is located on the opening 236 side. A gas nozzle 340d is disposed inside one of the first buffer sections 12b. In addition, a gas nozzle 340e is disposed inside the other first buffer section 12b. In addition, the "top view" in this specification refers to a cross section in a plane that is orthogonal to the central axis of the reaction tube 203.

[0066] Each gas nozzle 340a-340c is disposed from the lower part to the upper part of the nozzle configuration chamber 222, and gas nozzles 340d and 340e are disposed from the lower part to the upper part of the first buffer section 12b. In addition, each partition 18a-18d of the nozzle configuration chamber 222 is formed from the top of the nozzle configuration chamber 222 to the upper part of the lower end of the reaction tube 203.

[0067] Gas nozzles 340a to 340e are each configured as I-shaped elongated nozzles. Gas supply holes 234a to 234e for supplying gas are respectively provided on the side surfaces of gas nozzles 340a to 340e. Gas supply holes 234a to 234e open toward the center of reaction tube 203, and gas from each gas supply hole 234a to 234e is supplied toward the center of reaction tube 203. In addition, gas nozzles 340a to 340c are an example of a third supply unit configured to supply gas to processing chamber 201.

[0068] Gas nozzles 340a and 340c inject inert gas from gas supply holes 234a and 234c. Gas nozzle 340b releases raw material gas in a second chamber 222b, which is the space between each partition 18b and 18c corresponding to the gas nozzle 340b. In particular, the gas nozzle 340b is an example of a third supply unit configured to supply gas to the processing chamber 201 via a flash flow. Furthermore, gas is supplied from each gas nozzle 340a to 340c to the inner tube 12 via an inlet provided in the front wall of each chamber 222a to 222c. The inlet provided in the inner tube 12 is preferably located between the bottom plate of the lowest wafer 200 that can be placed on the crystal boat 217 and the bottom plate of the crystal boat 217, and extends between the top plate of the uppermost wafer 200 and the top plate of the crystal boat 217, so that it is located between each wafer 200, the bottom plate and the top plate.

[0069] The opening 236 is configured to sandwich the area of ​​the wafer 200 in the processing chamber 201 between the opening 236 and the nozzle configuration chamber 222. The opening 236 is formed in the area (wafer area) from the lower end side to the upper end side of the processing chamber 201 where the wafer 200 is stored.

[0070] A second exhaust port 237 is formed on the peripheral wall below the opening 236 of the inner tube 12. The opening 236 is configured to connect the processing chamber 201 and the gap S, and the second exhaust port 237 is configured to discharge ambient gas below the processing chamber 201.

[0071] That is, opening 236 is a gas exhaust port that discharges the ambient gas in the processing chamber 201 into the gap S. The gas discharged from opening 236 passes through the gap S outside the inner tube 12 and the exhaust port 230, and is discharged from exhaust pipe 231 to the outside of reaction tube 203. In addition, the gas discharged from the second exhaust port 237 passes through the lower side of the gap S and the exhaust port 230, and is discharged from exhaust pipe 231 to the outside of reaction tube 203.

[0072] By utilizing this configuration, the gas passing through the wafer is discharged via the outside of the cylinder, thereby reducing the pressure difference between the exhaust section of the vacuum pump 246 and the wafer region, and minimizing pressure loss. Furthermore, by minimizing pressure loss, the pressure in the wafer region can be reduced, the flow rate in the wafer region can be increased, and the load effect can be mitigated.

[0073] This forms the main exhaust path 20, which draws in the ambient gas inside the inner pipe 12, such as... Figure 1 As shown, the exhaust is discharged through the opening 236, the gap S, and the exhaust port 230 provided in the outer pipe 14.

[0074] In addition, a secondary exhaust path 22 is formed to allow ambient gases, such as those inside the inner pipe 12, to be released. Figure 1 As shown, the exhaust is discharged to the outside via the second exhaust port 237, the gap S and the exhaust port 230 provided in the outer pipe 14.

[0075] like Figure 1 As shown, an opening 236 is formed in the wafer region of the inner tube 12 and connects the processing chamber 201 and the gap S. A second exhaust port 237 is formed between a position higher than the upper end of the exhaust port 230 and a position higher than the lower end of the exhaust port 230.

[0076] In addition, such as Figure 2 As shown, when viewed from above, the reaction tube 203 has a second buffer portion 80 on the side opposite to the opening 236, along the outer tube 14 and separated by the first buffer portion 12b. The second buffer portion 80 is formed to be surrounded by the inner tube 12, the outer tube 14, and the sidewall 74 of the first buffer portion 12b. Specifically, the second buffer portion 80 is formed to be surrounded by the outer peripheral surface of the inner tube 12, the inner peripheral surface of the outer tube 14, the sidewall 74 of the first buffer portion 12b, and the first partition 18a.

[0077] In the reaction tube 203, in a top view, the width W1 of the first gap 90 formed between the outer wall 70 of the first buffer portion 12b and the inner circumferential surface of the outer tube 14 is narrower than the width W2 of the second gap 92 formed between the outer circumferential surface of the inner tube 12 and the inner circumferential surface of the outer tube 14 from the first buffer portion 12b to the opening. Specifically, in the top view, in the reaction tube 203, the first buffer portion 12b is configured such that the width W1 of the first gap 90 is narrower than the width W2 of the second gap 92.

[0078] Furthermore, a first gap 90 is formed between the two sidewalls 72 and 74 of the first buffer portion 12b. In other words, the first gap 90 is formed between sidewalls 72 and 74 of the outer wall 70. As a result, the conductivity between the outer wall 70 of the first buffer portion 12b and the outer tube 16 can be minimized. Therefore, the recirculation of gas discharged from the opening 236 can be suppressed.

[0079] In the above top view, the width W1 of the first gap 90 is configured to be constant along the outer tube 14. However, this disclosure is not limited to this configuration, and the width W1 of the first gap 90 may be configured to narrow along the outer tube 14 toward the second buffer portion 80 in the above top view.

[0080] In each of the second buffer sections 80, a second supply section, i.e., a gas nozzle 340f, for supplying purified gas as an inert gas is provided inside one of the second buffer sections 80. Additionally, a second supply section, i.e., a gas nozzle 340g, for supplying purified gas as an inert gas is provided inside the other second buffer section 80. These gas nozzles 340f and 340g extend in the vertical direction.

[0081] In the gas nozzle 340f, a plurality of long gas supply holes 234f are provided at intervals along the length of the gas nozzle 340f. The gas nozzle 340f is configured to face towards Figure 2 Purified gas is supplied to the upper part of the first gap 90. That is, the direction of the purified gas injection from the gas nozzle 340f is toward the first gap 90. More specifically, the gas supply hole 234f opens toward the first gap 90.

[0082] In the gas nozzle 340g, a plurality of long gas supply holes 234g are provided at intervals along the length of the gas nozzle 340g. The gas nozzle 340g is configured to face towards Figure 2 Purified gas is supplied to the first gap 90 on the lower side of the gas nozzle 340g. That is, the injection direction of the purified gas from the gas nozzle 340g is toward the first gap 90. More specifically, the gas supply hole 234g opens toward the first gap 90. In addition, in this embodiment, the gas nozzle 340f and the gas nozzle 340g have the same flow path diameter (pipe diameter).

[0083] Furthermore, the width W1 of the first gap 90 is configured to be smaller than the flow path diameter D of the gas nozzles 340f and 340g. Additionally, the protrusion H of the first buffer section 12b extending from the inner tube 12 is configured to be greater than the flow path diameter D of the gas nozzles 340f and 340g. Furthermore, the second buffer section 80 is configured to be able to be filled with purified gas supplied from the gas nozzles 340f and 340g.

[0084] Furthermore, the gas nozzles 340f and 340g can supply purified gas to the side wall, inner tube 12, or outer tube 16 of the first buffer section 12b, thereby creating a high pressure inside the second buffer section 80 relative to the opening 236. This improves the effect of suppressing the recirculation of gas discharged from the opening 236.

[0085] Figure 6 This is a block diagram representing the substrate processing apparatus 10. The controller 280, which serves as the control unit of the substrate processing apparatus 10, is composed of a computer. The computer includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.

[0086] RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with CPU 121a via internal bus 121e. Input / output device 122, configured as, for example, a touch panel, is connected to controller 280.

[0087] The storage device 121c is composed of, for example, flash memory, HDD (hard disk drive), etc. The storage device 121c stores in a readable manner a control program for controlling the operation of the substrate processing apparatus or a process plan that records the sequence, conditions, etc. of substrate processing, as described later.

[0088] A process plan functions as a procedure; it is a combination that enables the controller 280 to execute the sequence of substrate processing steps described later to obtain a predetermined result. Hereinafter, process plans, control procedures, etc., will be collectively referred to as procedures.

[0089] When the term "program" is used in this specification, it may refer to a single process scheme, a single control program, or both. RAM 121b is configured as a memory area (working area) for temporarily storing programs, data, etc., read by CPU 121a.

[0090] I / O port 121d is connected to the aforementioned MFC 320a~320f, valves 330a~330f, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, crystal boat rotation mechanism 267, crystal boat lift 115, etc.

[0091] CPU 121a is configured to read and execute control programs from storage device 121c, and to read process plans from storage device 121c in response to inputs such as operation commands from input / output device 122.

[0092] CPU 121a is configured to perform the following controls according to the read process plan: control the flow rate adjustment of various gases in MFCs 320a to 320f, the opening and closing of valves 330a to 330f, and the opening and closing of APC valve 244. Furthermore, CPU 121a is configured to control the pressure adjustment of APC valve 244, the start and stop of vacuum pump 246, and the temperature adjustment of heater 207 based on pressure sensor 245. Additionally, CPU 121a is configured to control the rotation and speed adjustment of crystal boat 217 via crystal boat rotation mechanism 267, and the lifting and lowering of crystal boat 217 via crystal boat elevator 115, etc.

[0093] The controller 280 is not limited to being constructed from a dedicated computer, but can be constructed from a general-purpose computer. For example, the controller 280 of this embodiment can be constructed by preparing an external storage device 123 storing the above-described program, and using the external storage device 123 to install the program onto a general-purpose computer, etc. Examples of external storage devices include, for example, a hard disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory, etc.

[0094] Furthermore, the means for providing the program to the computer are not limited to providing it via external storage device 123. For example, the program can be provided using communication means such as the Internet or a dedicated line, without via external storage device 123. Storage device 121c and external storage device 123 constitute a computer-readable recording medium. Hereinafter, these will be collectively referred to as recording medium. When the term "recording medium" is used in this specification, it may include only a single storage device 121c, only a single external storage device 123, or both.

[0095] (Example)

[0096] Next, the operation of the substrate processing apparatus in this embodiment will be described in summary according to the control sequence executed by the controller 280 during the execution of the process plan. Additionally, a wafer boat 217 carrying a predetermined number of wafers 200 is pre-inserted into the reaction tube 203, the reaction tube 203 is hermetically sealed with a cover 219, and the vacuum pump 246 and APC valve 244 are operated to expel the ambient gas inside the reaction tube 203 from the exhaust port 230, adjusting the pressure to a predetermined pressure. Furthermore, this wafer boat loading and pressure adjustment can also be included in the process plan.

[0097] For example, controller 280 opens valves 330b and 330f to supply raw material gas from gas nozzle 340b, which is an example of a second gas nozzle. At the same time, controller 280 closes valve 330a and opens valves 330c to 330f to supply N2 gas, which is an inert gas, from gas nozzles 340a, 340c to 340e to process wafer 200 (first processing sequence).

[0098] At this time, the controller 280 operates the vacuum pump 246 and the APC valve 244 to discharge the ambient gas in the reaction tube 203 from the exhaust port 230, so that the pressure obtained from the pressure sensor 245 becomes constant. As a result, the mixture of raw material gas and inert gas flows parallel above the wafer 200, then flows from the upper part to the lower part of the gap S through the opening 236 and the second exhaust port 237, and then is discharged from the exhaust pipe 231 through the exhaust port 230.

[0099] Furthermore, specifically, a portion of the mixed gas discharged from the opening 236 does not flow towards the exhaust port 230 within the gap S, but instead flows backward (diffused). According to this embodiment, by utilizing the first gap 90 formed between the first buffer section 12b and the outer tube 14, the diffusion of the mixed gas can be suppressed before the first buffer section 12b. Thus, after the mixed gas flows parallel on the wafer 200, it flows from the upper part to the lower part of the gap S through the opening 236, and is discharged from the exhaust pipe 231 via the exhaust port 230.

[0100] In this processing sequence, inert gas is supplied to the center of wafer 200 from gas nozzles 340a, 340c to 340e. At this time, the controller 280 controls the amount of inert gas supplied from each gas nozzle 340a, 340c to 340e, adjusting it so that the inert gas concentration at the center of wafer 200 is lower than that at the outer periphery. This allows control over the amount of raw material gas supplied to the center of wafer 200, enabling the in-plane thickness distribution of the layer formed on wafer 200 using the raw material gas to change from a centrally concave distribution to a distribution closer to a flat distribution or a distribution closer to a centrally convex distribution.

[0101] On the other hand, in this processing sequence, for example, the supply amount of inert gas from each gas nozzle 340f, 340g is controlled by the controller 280, thereby filling the second buffer section 80 with inert gas and adjusting the pressure within the second buffer section 80 to be higher than the pressure on the opening side 236. This suppresses the flow of a portion of the mixed gas undergoing back diffusion within the gap S. It can then be discharged from the exhaust port 230 without being retained. Alternatively, inert gas can be supplied to the first gap 90 from each gas nozzle 340f, 340g.

[0102] When the first processing sequence is completed after a predetermined time, the controller 280 closes valve 330b to stop supplying raw material gas from gas nozzle 340b and opens valve 330f to supply inert gas from gas nozzle 340b. Furthermore, by controlling vacuum pump 246 and APC valve 244 to increase the negative pressure supplied to reaction tube 203, ambient gas is discharged from exhaust port 230 (exhaust sequence).

[0103] At this time, the supply of inert gas from each gas nozzle 340f, 340g is stopped. Simultaneously, valves 330a, 330c are opened to supply inert gas from gas nozzles 340a, 340c, while simultaneously discharging it from exhaust port 230, and purging out the gas remaining in the gap S between the inner tube 12 and the outer tube 14 from exhaust port 230 (discharge sequence).

[0104] When the processing of wafer 200 is completed by performing the first processing sequence and discharge sequence described above, the wafer boat 217 is removed from the reaction tube 203 by performing the reverse sequence of the above actions. The wafer 200 is transferred from the wafer boat 217 to a wafer pod on a transfer rack by a wafer transfer machine (not shown), the wafer pod is transferred from the transfer rack to the wafer pod stage by a wafer pod conveyor, and then removed to the outside of the housing by an external transfer device.

[0105] (Variation Example 1)

[0106] Additionally, after the first processing sequence, the controller 280 can open valves 330a and 330e to supply a reaction gas (e.g., a nitrogen-containing or oxygen-containing gas) from the gas nozzle 340a. In this case, the controller 280 can be configured to simultaneously close valve 330b and open valves 330c, 330d, and 330f to supply nitrogen gas (N2) as an inert gas from the gas nozzles 340a, 340c, 340d, and 340f to perform processing on the wafer 200 (second processing sequence).

[0107] At this time, a portion of the mixture of reactant and inert gases discharged from opening 236 flows back through gap S instead of flowing towards exhaust port 230. Similar to the first processing sequence, by utilizing the first gap 90 formed between the first buffer section 12b and the outer pipe 14, the diffusion of this mixture before the first buffer section 12b can be suppressed. Furthermore, by controlling the supply amount of inert gas from each gas nozzle 340f, 340g using controller 280, the pressure within the second buffer is adjusted to be higher than the pressure on the opening 236 side, thereby suppressing the flow of a portion of the mixture that is diffusing back through gap S.

[0108] After the predetermined time has elapsed and the second processing sequence is completed, the exhaust sequence described above is executed and the supply of inert gas from each gas nozzle 340f, 340g is stopped. Subsequently, the exhaust method described above is executed.

[0109] (Variation Example 2)

[0110] Next, in the process of supplying raw material gas to the wafer 200 in the processing chamber 201 (first processing sequence), valves 330b and 330f are first opened, allowing the raw material gas to be supplied to the storage section (not shown) via gas supply pipes 310b and 310f. The raw material is stored in the storage section and heated and vaporized by a heater (not shown). The vaporized gaseous raw material (raw material gas) is regulated by MFCs 320b and 320f and supplied to the gas supply pipes 310b and 310f. This raw material gas is supplied to the processing chamber 201 from the gas supply port 234b of the gas nozzle 340b and discharged from the exhaust port 230.

[0111] At this time, the raw material gas discharged from the opening 236 directly enters the gap S and collides with the outer tube 14. Then, a portion of the raw material gas does not flow to the exhaust port 230 within the gap S, but diffuses along the outer tube. In other words, in the flash supply of the embodiment, there is a concern that a large amount of raw material gas will diffuse within the gap S instead of flowing to the exhaust port 230.

[0112] However, even in this case, as with the first processing sequence described above, the diffusion of the raw material gas can be suppressed before the first buffer section 12b by utilizing the first gap 90 formed between the first buffer section 12b and the outer tube 14. Furthermore, by controlling the supply amount of inert gas from each gas nozzle 340f, 340g using the controller 280, the pressure within the second buffer is adjusted to be higher than the pressure on the opening 236 side, thereby suppressing the flow of a portion of the raw material gas that is diffusing backwards within the gap S. This improves the exhaust performance of the raw material gas.

[0113] According to this embodiment, one or more of the following effects can be achieved.

[0114] (a) In the top view, the width W1 of the first gap 90 formed between the outer wall 70 of the first buffer section 12b and the outer tube 142 is configured to be narrower than the width W2 of the second gap 92 formed between the inner tube 12 and the outer tube 142 from the first buffer section 12b to the opening 236. Therefore, the conductivity between the outer wall of the first buffer section 12b and the outer tube 14 can be configured to be smaller. That is, in the gap S between the inner tube 12 and the outer tube 14, the pressure on the nozzle configuration chamber 222 side can be a positive pressure relative to the exhaust port 230 side. Therefore, the recirculation of the exhaust gas discharged from the opening 236 can be suppressed. As a result, the adhesion and generation of byproducts inside the reaction tube 203 can be suppressed, and the generation of particles can be reduced.

[0115] (b) Alternatively, purified gas can be supplied from gas nozzles 340f and 340g to the first gap 90 formed between the first buffer portion 12b and the outer tube 14, which can improve the effect of suppressing the backflow of the exhaust gas discharged from the opening 236 and suppress the retention of the backflowing exhaust gas. In addition, compared with the case where the first gap 90 is not formed as disclosed in this disclosure, the flow rate of purified gas can be reduced.

[0116] (c) Even if the exhaust gas discharged from the opening 236 recirculates due to a large flow rate supply (flash supply), according to this configuration, in the top view, the width W1 of the first gap 90 formed between the inner tube 12 and the outer tube 14 is configured to be narrower, and since the width W1 is constant from the outer wall 70 of the first buffer portion 12b along the outer tube 14, the conductivity between the outer wall 70 of the first buffer portion 12b and the outer tube 14 can be configured to be smaller. Therefore, the recirculation of the exhaust gas discharged from the opening 236 can be suppressed.

[0117] (Another embodiment of this disclosure)

[0118] Although the embodiments of this disclosure have been specifically described above, this disclosure is not limited to the above embodiments and various changes can be made without departing from its spirit.

[0119] For example, in the above embodiment, the gas nozzle 340f is configured to face towards Figure 3 Purified gas is supplied to the upper first gap 90, but this disclosure is not limited to this configuration. For example, the gas nozzle 340f can be configured to supply purified gas toward any one of the sidewalls 72 of the inner tube 12, the outer tube 14, and the first buffer portion 12b. Alternatively, the gas nozzle 340f can also be configured to supply purified gas in an inclined direction toward the opening 236 along the outer tube 14 from the second buffer portion 80. Figure 4In the example, gas nozzle 340f injects purified gas into the side wall 72 of the first buffer section 12b. With this configuration, purified gas can be supplied from gas nozzle 340f to the side wall 72 of the first buffer section 12b, the inner tube 12, or the outer tube 14, and the pressure inside the second buffer section 80 can be higher than that of the opening 236. This improves the effect of suppressing the recirculation of the exhaust gas exiting from the opening 236. The same effect can also be obtained with gas nozzle 340g.

[0120] Furthermore, in the above embodiment, a gas nozzle is provided in each second buffer section 80, but this disclosure is not limited to this configuration. Multiple gas nozzles can be arranged within the second buffer section 80. For example, as... Figure 5 As shown, a gas nozzle 340f for injecting purified gas into the first gap 90 and a gas nozzle 340h for injecting purified gas toward the side wall 72 of the first buffer section 12b can be disposed inside the second buffer section 80. With this configuration, purified gas can be supplied to the first gap 90 from the gas nozzle 340f, and purified gas can be supplied to the side wall 72, inner tube 12, or outer tube 14 of the first buffer section 12b from the gas nozzle 340h. This allows the pressure inside the second buffer section 80 to be set higher than the opening 236. This improves the effect of suppressing the recirculation of the exhaust gas discharged from the opening 236. Furthermore, by arranging multiple gas nozzles inside the second buffer section 80 and adjusting the injection direction of each purified gas, the same effect can be obtained.

[0121] Furthermore, a portion of the gas nozzle disposed within each second buffer section 80 can serve as a gas nozzle 96 supplying purified gas to the area between the top of the outer tube 14 and the top of the inner tube 12. When using this gas nozzle 94, for example... Figure 7 As shown, a baffle 97 extending from the upper part of the inner tube 12 to the outer tube 14 is provided, and a baffle 98 extending from the top of the inner tube 12 to the top of the outer tube 14 is provided. Furthermore, a gap is provided between the baffle 97 and the outer tube 14. A gap is also provided between the baffle 98 and the top of the outer tube 14. In this configuration, the gas nozzle 94 can supply purified gas to the exhaust gas that loops back into the area between the top of the outer tube 14 and the top of the inner tube 12, thereby improving not only the effect of suppressing the looping of exhaust gas but also the exhaust efficiency.

[0122] like Figure 8As shown, the system may include gas nozzles 340a-340e configured to supply raw material gas to the processing chamber 201 via side flow, and baffles 18a and 18d. The second buffer section 80 is formed by the inner tube 12, the outer tube 14, the sidewall 72 of the first buffer section 12b, and the baffles 18a or 18d. With this configuration, the diffusion (or inflow) of raw material gas into the second buffer section 80 caused by the recirculation from the gas nozzles 340a-340e can be suppressed.

[0123] Furthermore, for example, in the above embodiments, the processing performed as the processing apparatus is exemplified by film formation processing in a semiconductor device, but this disclosure is not limited to this. That is, in addition to film formation processing, it can also be processing to form an oxide film, a nitride film, or a film containing metal. Furthermore, the specific content of the substrate processing is not limited; this disclosure is applicable not only to film formation processing but also to other substrate processing such as annealing, oxidation, nitride, diffusion, and photolithography. Additionally, this disclosure is also applicable to other substrate processing apparatuses, such as annealing apparatuses, oxidation apparatuses, nitride apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, and plasma-based processing apparatuses. Moreover, in this disclosure, these apparatuses can be used together.

[0124] Furthermore, a portion of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of other embodiments can be added to the configuration of one embodiment. Additionally, a portion of the configuration of each embodiment can be added to, deleted from, or replaced with other configurations.

[0125] [Symbol Explanation]

[0126] 12: Inner tube

[0127] 14: External pipe

[0128] 12b: First Buffer Section

[0129] 80: Second Buffer Section

[0130] 90: First gap

[0131] 92: Second gap

[0132] 236: First gas exhaust port (an example of an opening)

[0133] W1: Width

[0134] W2: Width

Claims

1. A processing container, characterized in that, have: The inner tube has an opening for discharging processing gas from the processing chamber and a first buffer section having a first supply section for supplying the processing gas to the processing chamber disposed inside. An outer tube, which is disposed outside the aforementioned inner tube; and The second buffer section is located on the opposite side of the opening along the outer tube, separated from the first buffer section, and is formed to be surrounded by the sidewalls of the inner tube, the outer tube, and the first buffer section. The aforementioned processing container is configured such that, when viewed from above, the width of the first gap formed between the outer wall of the first buffer portion and the outer tube is narrower than the width of the second gap formed between the inner tube and the outer tube from the first buffer portion to the opening.

2. The processing container according to claim 1, characterized in that, The configuration is such that, when viewed from above, the width of the first gap is constant along the outer tube.

3. The processing container according to claim 2, characterized in that, The outer wall of the first buffer section and the outer tube are arranged in a concentric circle.

4. The processing container according to claim 1, characterized in that, The aforementioned first gap is formed between the two side walls of the aforementioned first buffer portion.

5. The processing container according to claim 1, characterized in that, The width of the first gap is configured such that, when viewed from above, it narrows as it moves along the outer tube toward the second buffer section.

6. The processing container according to claim 1, characterized in that, It also includes a second supply unit for supplying purified gas into the second buffer unit. The width of the first gap is configured to be smaller than the flow path diameter of the second supply section.

7. The processing container according to claim 6, characterized in that, The width between the two side walls of the first buffer section is configured to be larger than the flow path diameter of the second supply section.

8. The processing container according to claim 1, characterized in that, It also includes a second supply unit for supplying purified gas into the second buffer unit. The second supply section is configured to supply the purified gas from the second buffer section along the outer tube in a direction inclined relative to the direction toward the opening.

9. The processing container according to claim 8, characterized in that, The second buffer section is configured to be filled with the purified gas.

10. The processing container according to claim 9, characterized in that, The second supply unit is configured to supply the purified gas to any one of the sidewalls of the inner tube, the outer tube, and the first buffer unit.

11. The processing container according to claim 8, characterized in that, The second supply unit is configured to supply the purified gas toward the first gap.

12. The processing container according to claim 9, characterized in that, The aforementioned second supply section is located near the aforementioned first buffer section.

13. The processing container according to claim 8, characterized in that, Multiple of the aforementioned second supply units are configured within the aforementioned second buffer unit.

14. The processing container according to claim 13, characterized in that, The second supply section has: a first purification nozzle that supplies purified gas toward any one of the sidewalls of the inner tube, the outer tube, and the first buffer section; and a second purification nozzle that supplies purified gas toward the area between the top of the outer tube and the top of the inner tube.

15. The processing container according to claim 1, characterized in that, It also has a third supply unit, which is configured to supply the processing gas to the processing chamber via flash flow.

16. The processing container according to claim 1, characterized in that, It also includes a third supply unit, which is configured to supply the processing gas to the processing chamber via a side flow. The second buffer section is formed to be surrounded by the inner tube, the outer tube, the side wall of the first buffer section, and the third supply section.

17. The processing container according to claim 15, characterized in that, It also includes a second supply unit for supplying purified gas into the second buffer unit. The second supply section is configured to supply the purified gas toward the third gap formed between the third supply section and the inner tube.

18. A processing apparatus, characterized in that, It has a processing container. The processing container has the following features: The inner tube has an opening for discharging processing gas from the processing chamber and a first buffer section having a first supply section for supplying the processing gas to the processing chamber disposed inside. An outer tube, which is disposed outside the aforementioned inner tube; and The second buffer section is located on the opposite side of the opening along the outer tube, separated from the first buffer section, and is formed to be surrounded by the sidewalls of the inner tube, the outer tube, and the first buffer section. The aforementioned processing container is configured such that, when viewed from above, the width of the first gap formed between the outer wall of the first buffer portion and the outer tube is narrower than the width of the second gap formed between the inner tube and the outer tube from the first buffer portion to the opening.

19. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: The process of moving a substrate containing semiconductors into a processing container; and The process of supplying processing gas to the aforementioned substrate to perform a predetermined treatment. The above-mentioned processing container has: The inner tube has an opening for discharging the processing gas from the processing chamber and a first buffer section having a first supply section for supplying the processing gas to the processing chamber disposed inside. An outer tube, which is disposed outside the aforementioned inner tube; and The second buffer section is located on the opposite side of the opening along the outer tube, separated from the first buffer section, and is formed to be surrounded by the sidewalls of the inner tube, the outer tube, and the first buffer section. The aforementioned processing container is configured such that, when viewed from above, the width of the first gap formed between the outer wall of the first buffer portion and the outer tube is narrower than the width of the second gap formed between the inner tube and the outer tube from the first buffer portion to the opening.

20. The method for manufacturing a semiconductor device according to claim 19, characterized in that, In the process of performing the above-mentioned predetermined processing, raw material gas is supplied to the substrate via a storage container. The storage container is provided in the raw material gas supply pipeline that supplies the raw material gas to the processing chamber and is configured to temporarily store the raw material gas inside.

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