Semiconductor relay and electrical component unit provided with same

Abstract

A semiconductor relay (1) is provided with a first input terminal (6), a second input terminal (7), a light-emitting element (2), a light-receiving drive element (5), a first output terminal (8), a second output terminal (9), a first MO SFET element (3), a second MOSFET element (4), and a connection conductor (12). A connection conductor (12) is formed on the rear surface of the light-receiving drive element (5) and connects a first source electrode of the first MOSFET element (3) and a second source electrode of the second MOSFET element. The connection conductor (12) has first to third connection conductor parts. The first connection conductor portion is disposed between the light-receiving drive element and the first source electrode, and the second connection conductor portion is disposed between the light-receiving drive element and the second source electrode.

Description

Technical Field

[0001] This disclosure relates to a semiconductor relay and an electrical component unit having the semiconductor relay. Background Technology

[0002] Previously, as a signal transmission unit, a type of semiconductor relay, also known as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) output optocoupler or optoMOSFET, was known. In such semiconductor relays, the increase in insertion loss with the increasing frequency of transmitted signals has become a problem.

[0003] To address this issue, for example, the structure shown in Patent Document 1 has been proposed. In the semiconductor relay disclosed in Patent Document 1, a light-emitting element mounted on the input terminal and a light-receiving element mounted on the output terminal are arranged opposite each other inside the housing. Both the input terminal and the output terminal are bent once in the middle, and the top portions of the input terminal and the output terminal protrude outward along the lower surface of the housing.

[0004] When the semiconductor relay is mounted on a circuit board with signal lines and ground lines formed on its upper surface, the distance between the light-receiving element and the element mounting portion carrying the input terminal of the light-receiving element, and the ground line and the ground plane formed on the lower surface of the circuit board can be increased. Furthermore, both the ground line and the ground plane are electrically connected to the ground potential. This reduces the capacitance value of parasitic capacitance generated between each mounting portion of the semiconductor relay and the ground potential, thereby reducing insertion loss.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent No. 5491894 Summary of the Invention

[0008] In recent years, there has been a demand for further miniaturization of semiconductor relays. In addition, there is a demand for further high-frequency signals transmitted via semiconductor relays, which in turn requires further improvement in the signal transmission characteristics in the high-frequency domain.

[0009] The semiconductor relay disclosed herein includes: a first input terminal; a second input terminal; a light-emitting element electrically connected to the first input terminal and the second input terminal; a light-receiving driving element having a light-receiving element for receiving light output from the light-emitting element and outputting a driving signal based on the received light; a first output terminal; a second output terminal; a first MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) element having a first drain electrode; a second MOSFET element; and a connecting conductor. The first MOSFET element has: a first gate electrode to which the driving signal is input; a first source electrode; and a first drain electrode electrically connected to the first output terminal. The second MOSFET element has: a second gate electrode to which the driving signal is input; a second source electrode; and a second drain electrode electrically connected to the second output terminal. The connecting conductor is electrically connected to the first source electrode and the second source electrode. The first MOSFET element has a first surface and a first back surface opposite to the first surface, the first surface having a first gate electrode and a first source electrode. The second MOSFET element has a second surface and a second back surface opposite to the second surface, the second surface having a second gate electrode and a second source electrode. The first surface of the first MOSFET element has: a first mounting portion having the first source electrode and mounting the light-receiving driving element; and a first non-mounted portion having the first gate electrode but not mounting the light-receiving driving element. The second surface of the second MOSFET element has: a second mounting portion having the second source electrode and mounting the light-receiving driving element; and a second non-mounted portion having the second gate electrode but not mounting the light-receiving driving element. The first MOSFET element and the second MOSFET element are located in a first direction relative to the light-receiving driving element in a manner opposite to the back surface of the light-receiving driving element. The first MOSFET element is located in a second direction perpendicular to the first direction relative to the second MOSFET element. The connecting conductor has: a first connecting conductor portion that overlaps with the first MOSFET element when viewed along the first direction; a second connecting conductor portion that overlaps with the second MOSFET element when viewed along the first direction; and a third connecting conductor portion that electrically connects the first connecting conductor portion to the second connecting conductor portion. The third connecting conductor portion does not overlap with the first MOSFET element and the second MOSFET element when viewed along the first direction. The connecting conductor is located on the back side of the light-receiving driving element.

[0010] The electrical component unit disclosed herein includes the semiconductor relay and a circuit board on which the semiconductor relay is mounted. The circuit board has: a dielectric layer; a wiring layer formed on the dielectric layer; and a ground layer formed on the dielectric layer. The wiring layer has: a first wiring connected to the first input terminal and the second input terminal; and a second wiring connected to the first output terminal and the second output terminal.

[0011] According to this disclosure, the miniaturization of semiconductor relays can be achieved. Furthermore, insertion loss can be reduced. Attached Figure Description

[0012] Figure 1 This is a perspective view of the semiconductor relay according to Embodiment 1.

[0013] Figure 2 From Figure 1 The side view obtained by observing the semiconductor relay of Embodiment 1 from direction A is shown.

[0014] Figure 3 From Figure 2 The diagram shows the first input terminal of the semiconductor relay of Embodiment 1 and the second input terminal on which the light-emitting element is mounted, viewed from direction B.

[0015] Figure 4A From Figure 2 The diagram shown is taken from direction C, showing the first output terminal and the second output terminal of the semiconductor relay of Embodiment 1, which are equipped with a light-driven element, a first MOSFET element, and a second MOSFET element.

[0016] Figure 4B It is viewed from above in the Z direction. Figure 4A The diagram shows the light-receiving drive element, the first MOSFET element, the second MOSFET element, the first output terminal, and the second output terminal.

[0017] Figure 4C yes Figure 4A Partial exploded perspective view of the light-receiving drive element, the first MOSFET element, the second MOSFET element, the first output terminal, and the second output terminal shown.

[0018] Figure 5 This is a perspective view of the light-emitting element of the semiconductor relay according to Embodiment 1.

[0019] Figure 6A This is a perspective view of the light-receiving driving element of the semiconductor relay according to Embodiment 1.

[0020] Figure 6BThis is a perspective view of another light-driven element of the semiconductor relay in Embodiment 1.

[0021] Figure 7 This is a perspective view of the first MOSFET element of the semiconductor relay according to Embodiment 1.

[0022] Figure 8 This is a perspective view of the electrical component unit of Embodiment 1.

[0023] Figure 9 This is the equivalent circuit diagram of the semiconductor relay in Implementation Method 1.

[0024] Figure 10A This is a diagram showing the signal path in the semiconductor relay of Embodiment 1.

[0025] Figure 10B This is another diagram showing the signal path in the semiconductor relay of Embodiment 1.

[0026] Figure 10C This is another diagram showing the signal path in the semiconductor relay of Embodiment 1.

[0027] Figure 11 The semiconductor relay is a comparative example. Figure 2 A fairly accurate diagram.

[0028] Figure 12 This is a comparison diagram of the signal path in the semiconductor relay of Embodiment 1 and the signal path in the semiconductor relay of the comparative example.

[0029] Figure 13 This is a schematic diagram showing the distribution of parasitic capacitance in a comparative example semiconductor relay.

[0030] Figure 14 This is a schematic diagram illustrating the effect of reducing capacitive coupling on the input and output sides of the semiconductor relay in Embodiment 1.

[0031] Figure 15 This is a schematic diagram illustrating the effect of reducing capacitive coupling between the semiconductor relay and the ground potential in Embodiment 1.

[0032] Figure 16 This is a perspective view of the semiconductor relay according to embodiment 2.

[0033] Figure 17 From Figure 16 The side view obtained by observing the semiconductor relay of Embodiment 2 from the direction shown in D.

[0034] Figure 18 From Figure 17The diagram shows the first and second input terminals of the semiconductor relay of Embodiment 2, which are equipped with light-emitting elements, viewed from direction E.

[0035] Figure 19 From Figure 17 The diagram shows the first output terminal and the second output terminal of the semiconductor relay of Embodiment 2, which are equipped with a light-receiving driving element, a first MOSFET element and a second MOSFET element, viewed from direction F.

[0036] Figure 20 This is a schematic diagram comparing the signal path on the output side of the semiconductor relay in Embodiment 1 and the signal path on the output side in Embodiment 2.

[0037] Figure 21 This diagram compares the configuration of the first input terminal, the second input terminal, and the light-emitting element of the semiconductor relay in Embodiment 1 with that in Embodiment 2.

[0038] Figure 22 The first output terminal and the second output terminal of the modified example 1, which are equipped with a light-receiving driving element, a first MOSFET element, and a second MOSFET element, are connected to... Figure 4A A fairly accurate diagram.

[0039] Figure 23 Modification 2 is a device that houses a light-receiving driving element, a first MOSFET element, and a second MOSFET element at its first output terminal and second output terminal. Figure 4B A fairly accurate diagram.

[0040] Figure 24 This is a perspective view of the semiconductor relay according to embodiment 3.

[0041] Figure 25 This is a perspective view of another semiconductor relay in Embodiment 3.

[0042] Figure 26 This is a perspective view of another semiconductor relay according to embodiment 3.

[0043] Figure 27 This is a perspective view of another semiconductor relay in Embodiment 2.

[0044] Figure 28 This is a perspective view of another semiconductor relay according to Embodiment 1.

[0045] Figure 29 This is a perspective view of another semiconductor relay according to embodiment 3.

[0046] Figure 30This is a perspective view of another semiconductor relay according to embodiment 3.

[0047] Figure 31 This is a perspective view of the semiconductor relay according to embodiment 4.

[0048] Figure 32 This is a perspective view of another semiconductor relay in embodiment 4.

[0049] Figure 33 This is a perspective view of another semiconductor relay according to embodiment 4. Detailed Implementation

[0050] The embodiments of this disclosure are described below based on the accompanying drawings. Furthermore, the following description of preferred embodiments is merely illustrative and is not intended to limit the disclosure, its applications, or its uses.

[0051] (Implementation Method 1)

[0052] [Structure of a semiconductor relay]

[0053] Figure 1 A perspective view showing the semiconductor relay of this embodiment. Figure 2 Indicates from Figure 1 The side view obtained by observing the semiconductor relay from direction A shown. Figure 3 Indicates from Figure 2 The diagram shown is obtained by observing the first and second input terminals, where the light-emitting element is mounted, from direction B. Figure 4A Indicates from Figure 2 The diagram shown is obtained by observing the first and second output terminals of a light-receiving drive element, a first MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) element, and a second MOSFET element from direction C. Figure 4B This indicates viewing from above in the Z direction. Figure 4A The diagram shows the light-receiving drive element, the first MOSFET element, the second MOSFET element, the first output terminal, and the second output terminal. Figure 4C express Figure 4A Partial exploded perspective view of the light-receiving drive element, the first MOSFET element, the second MOSFET element, the first output terminal, and the second output terminal shown.

[0054] Furthermore, for ease of explanation, while Figure 1 , Figure 2 The outlines of the housing 10 and the light-shielding resin 10a and light-transmitting resin 10b constituting the housing 10 are shown by dashed lines.

[0055] Figure 5 A 3D diagram showing the light-emitting element. Figure 6A A 3D diagram showing a light-driven element. Figure 7 A 3D view showing the first MOSFET device.

[0056] Furthermore, in the following description, the direction in which the light-emitting element 2 and the light-receiving driving element 5 are relative may be referred to as the X direction. The direction in which the first output terminal 8 and the second output terminal 9 are arranged may be referred to as the Y direction. The Y direction is also the direction in which the first input terminal 6 and the second input terminal 7 are arranged. A direction orthogonal to both the X and Y directions may be referred to as the Z direction. In the embodiments, terms such as "upper surface," "lower surface," "above," "below," and "vertical direction" indicate relative directions determined solely by the relative positional relationship of the constituent components of the semiconductor relay, such as the MOSFET element and the light-receiving driving element, rather than absolute directions such as "vertical direction."

[0057] Furthermore, in this application specification, "orthogonal" or "parallel" means that the processing tolerances, manufacturing tolerances, or assembly tolerances between the components constituting the semiconductor relay 1 are orthogonal or parallel. It does not mean that the objects being compared are orthogonal or parallel to each other in a strict sense.

[0058] Furthermore, in this embodiment, the X direction is also the direction in which the light-receiving driving element 5 and the first MOSFET element 3 are arranged, as well as the direction in which the light-receiving driving element 5 and the second MOSFET element 4 are arranged. Additionally, in the Z direction, the side where the first MOSFET mounting portion 82 is disposed is referred to as "upper" or "above," and the side where the first output-side external terminal portion 81 is disposed is referred to as "lower" or "below." Furthermore, the terms "upper" and "lower" in this specification are only relative terms; for example, they do not necessarily mean "upper" and "lower" along the vertical direction.

[0059] Furthermore, in this embodiment, "surface" and "back" are defined as follows. First, in the light-emitting element 2, the surface forming the anode electrode 2c is designated as surface 2a, and the surface forming the cathode electrode 2d is designated as back surface 2b. In the light-receiving driving element 5, the surface forming the source electrode 5c and the drain electrode 5d is designated as surface 5a, and the surface opposite to surface 5a is designated as back surface 5b. In the first MOSFET element 3, the surface forming the first gate electrode 3d and the first source electrode 3e is designated as surface 3a, and the surface opposite to surface 3a is designated as back surface 3b. In the second MOSFET element 4, the surface forming the second gate electrode 4d and the second source electrode 4e is designated as surface 4a, and the surface opposite to surface 4a is designated as back surface 4b.

[0060] In addition, for each of the terminals of the first input terminal 6, the second input terminal 7, the first output terminal 8 and the second output terminal 9, the side on which the component is placed or the side connected to the wire 11 is designated as surface 6a, 7a, 8a and 9a, and the side opposite to each surface 6a, 7a, 8a and 9a is designated as back surface 6b, 7b, 8b and 9b.

[0061] like Figure 1 , Figure 2 As shown, the semiconductor relay 1 includes a light-emitting element 2, a light-receiving driving element 5, a first MOSFET element 3, and a second MOSFET element 4. Additionally, the semiconductor relay 1 includes a first input terminal 6, a second input terminal 7, a first output terminal 8, a second output terminal 9, and a housing 10.

[0062] Light-emitting element 2 is a known LED (Light Emitting Diode) element. For example... Figure 5 As shown, an anode electrode 2c is formed on the surface 2a of the light-emitting element, and a cathode electrode 2d is formed on the back side 2b of the light-emitting element. The cathode electrode 2d is connected and fixed to the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7 via a conductive adhesive material such as silver paste. In other words, the cathode electrode 2d is electrically connected to the second input terminal 7.

[0063] The light-receiving driving element 5 includes a light-receiving element 51 and a driving circuit 52 (see reference). Figure 9 The light-receiving element 51 is, for example, a known photodiode arranged in an array. Figure 6A As shown, a source electrode 5c and a drain electrode 5d are formed on the surface 5a of the light-receiving driving element 5. The drain electrode 5d is provided at two separate locations on the surface 5a. Furthermore, a light-receiving element 51 is also formed on the surface 5a of the light-receiving driving element 5, but its illustration is omitted for clarity.

[0064] In addition, such as Figure 4B , Figure 4C and Figure 6A As shown, a connecting conductor 12 is formed on the back surface 5b of the light-receiving driving element 5. The connecting conductor 12 is formed over the entire surface of the back surface 5b of the light-receiving driving element 5. The connecting conductor 12 is composed of one or more conductive films and is a layered or sheet-like conductive member. The structure and function of the connecting conductor 12 will be described later. The connecting conductor 12 itself is composed of a conductive adhesive sheet bonded to the back surface 5b of the light-receiving driving element 5. Alternatively, the connecting conductor 12 may also be composed of a conductive adhesive sheet bonded to the back surface 5b of the light-receiving driving element 5 and a conductive plate bonded to the conductive adhesive sheet.

[0065] Figure 6B This is a perspective view of another light-driven element 5 in Embodiment 1. Figure 6B The light-receiving driving element 5 shown has an insulating adhesive sheet 55 disposed on its back surface 5b. The connecting conductor 12 is disposed on the back surface 5b of the light-receiving driving element 5 by being bonded to the insulating adhesive sheet 55. The insulating adhesive sheet 55 can improve the adhesion between the light-receiving driving element 5 and the connecting conductor 12, and can improve the insulation between the light-receiving driving element 5 and the connecting conductor 12.

[0066] like Figure 4A , Figure 4C As shown, the source electrode 5c of the light-receiving driving element 5 and the first source electrode 3e of the first MOSFET element 3 are electrically connected via wire 11. One of the two drain electrodes 5d, 5d of the light-receiving driving element 5 is electrically connected to the first gate electrode 3d of the first MOSFET element 3 via wire 11. In addition, the other of the two drain electrodes 5d, 5d is electrically connected to the second gate electrode 4d of the second MOSFET element 4 via wire 11.

[0067] The first MOSFET element 3 is formed by creating a known vertical MOSFET on a semiconductor substrate. The first MOSFET element 3 is typically composed of multiple vertical MOSFETs connected in series or parallel. However, it can also be a single vertical MOSFET. For example... Figure 7 As shown, a first gate electrode 3d and a first source electrode 3e are formed on the surface 3a of the first MOSFET element 3, and a first drain electrode 3f is formed on the back surface 3b of the first MOSFET element 3. Furthermore, the first drain electrode 3f is formed over the entire back surface 3b of the first MOSFET element 3.

[0068] Furthermore, in the first MOSFET element 3, there is a case where the region where the first gate electrode 3d and the first source electrode 3e are formed is referred to as the first unit region 3c. The first unit region 3c is a MOSFET functional unit region in which one or more vertical MOSFETs are formed. In detail, the MOSFET functional unit region is a region on a semiconductor chip in which the gate, drain, and source electrodes are formed, respectively connected to the gate electrode, source electrode, and drain electrode, and the MOSFET element functions as a MOSFET.

[0069] like Figure 7 As shown, the first source electrode 3e has a first electrode body portion 3e1 and a first amplification electrode portion 3e2. As... Figure 4C As shown, inside the semiconductor relay 1, the length direction of the first electrode body portion 3e1 is the Z direction. A first amplifying electrode portion 3e2 is formed continuously with the first electrode body portion 3e1. Furthermore, when viewed along the X direction, the first electrode body portion 3e1 has a portion that overlaps with the light-receiving driving element 5 (see reference). Figure 4A , Figure 4C).

[0070] Furthermore, the second MOSFET element 4 has the same construction as the first MOSFET element 3 (see reference). Figure 7 Therefore, the configuration and shape of the second gate electrode 4d, the second source electrode 4e, and the second drain electrode 4f are the same as those of the first MOSFET element 3. That is, the second source electrode 4e also has a second electrode body portion 4e1 and a second amplifying electrode portion 4e2, whose shapes and configurations are the same as those of the first electrode body portion 3e1 and the first amplifying electrode portion 3e2, respectively. For example, when viewed along the X direction, the second electrode body portion 4e1 has a portion that overlaps with the light-receiving driving element 5 (see reference). Figure 4A , Figure 4C ).

[0071] Furthermore, on the surface 4a of the second MOSFET element 4, there exists a region where the second gate electrode 4d and the second source electrode 4e are formed, referred to as the second unit region 4c. Similar to the first unit region 3c, the second unit region 4c is a MOSFET functional unit region in which one or more vertical MOSFETs are formed.

[0072] In addition, such as Figure 4C As shown, a first connector 13 is provided on the surface of the first electrode body portion 3e1 of the first source electrode 3e. A second connector 14 is provided on the surface of the second electrode body portion 4e1 of the second source electrode 4e.

[0073] Furthermore, in the following description, the surface 3a of the first MOSFET element 3 will be referred to as the first surface 3a, and the surface 4a of the second MOSFET element 4 will be referred to as the second surface 4a.

[0074] In addition, such as Figure 4B and Figure 4C As shown, a light-receiving driving element 5 is mounted on the first surface 3a and the second surface 4a via a first connector 13 and a second connector 14, respectively. There are cases where the portion of the first surface 3a on which the light-receiving driving element 5 is mounted is referred to as the first mounting portion 3a1, the portion of the second surface 4a on which the light-receiving driving element 5 is mounted is referred to as the second mounting portion 4a1, the portion of the first surface 3a on which the light-receiving driving element 5 is not mounted is referred to as the first non-mounted portion 3a2, and the portion of the second surface 4a on which the light-receiving driving element 5 is not mounted is referred to as the second non-mounted portion 4a2.

[0075] The first mounting portion 3a1 has a first electrode body portion 3e1 with a first source electrode 3e, and the second mounting portion 4a1 has a second electrode body portion 4e1 with a second source electrode 4e. The first non-mounted portion 3a2 has a first amplification electrode portion 3e2 with a first source electrode 3e and a first gate electrode 3d, and the second mounting portion 4a1 has a second amplification electrode portion 4e2 with a second source electrode 4e and a second gate electrode 4d.

[0076] In addition, such as Figure 2 As shown, the first drain electrode 3f of the first MOSFET element 3 is fixed to the surface 8a of the first MOSFET mounting portion 82 of the first output terminal 8 by a conductive adhesive material such as silver paste. The second drain electrode 4f of the second MOSFET element 4 is fixed to the surface 9a of the second MOSFET mounting portion 92 of the second output terminal 9 by a conductive adhesive material.

[0077] The first connector 13 and the second connector 14 are each made of a conductive material, such as solder. However, the material and shape of the first connector 13 and the second connector 14 are not particularly limited thereto; for example, the first connector 13 and the second connector 14 can also be bump electrodes. In this case, multiple first connectors 13 are formed on the surface of the first electrode body portion 3e1 of the first source electrode 3e. Multiple second connectors 14 can also be formed on the surface of the second electrode body portion 4e1 of the second source electrode 4e.

[0078] The first connector 13 and the second connector 14 are electrically connected to the connecting conductor 12 formed on the back side 5b of the light-receiving driving element 5 (see reference). Figures 10A to 10C Furthermore, the first source electrode 3e of the first MOSFET element 3 and the second source electrode 4e of the second MOSFET element 4 are electrically connected via connecting conductor 12 and first connector 13, and connecting conductor 12 and second connector 14.

[0079] like Figure 4B As shown, the connecting conductor 12 has a first connecting conductor portion 12a to a third connecting conductor portion 12c. The first connecting conductor portion 12a is disposed in the connecting conductor 12 between the light-receiving driving element 5 and the first electrode body portion 3e1 of the first source electrode 3e, and is electrically connected to the first connector 13. The second connecting conductor portion 12b is disposed in the connecting conductor 12 between the light-receiving driving element 5 and the second electrode body portion 4e1 of the second source electrode 4e, and is electrically connected to the second connector 14. The third connecting conductor portion 12c is disposed in the connecting conductor 12 such that the first connecting conductor portion 12a and the second connecting conductor portion 12b are electrically connected, and overlaps with the light-receiving driving element 5 when viewed along the X direction.

[0080] In this embodiment, the connecting conductor 12, namely the first connecting conductor portion 12a to the third connecting conductor portion 12c, is a continuous sheet-like conductive material. However, it is not particularly limited to this, and the shape and thickness of each of the first connecting conductor portion 12a to the third connecting conductor portion 12c may be different.

[0081] Furthermore, the dimensions of the connecting conductor 12 are required to electrically connect the first connector 13 and the second connector 14. That is, the width of the connecting conductor 12 in the Y direction is equal to or greater than the Y-direction spacing between the first connector 13 and the second connector 14. Moreover, this spacing can be... Figure 4B The interval D1 shown can also be Figure 4B The interval D2 shown can also be Figure 4B The interval D3 is shown. Furthermore, interval D1 is the distance along the Y direction between the side of the first connector 13 and the side of the adjacent second connector 14. Interval D2 is the distance along the Y direction between the centerline of the first connector 13 and the centerline of the second connector 14. The aforementioned centerline is an imaginary line passing through the centers of the first connector 13 and the second connector 14, extending along the Z direction. Interval D3 is the distance along the Y direction between the side of the first connector 13 that is furthest from the second connector 14 along the Y direction and the side of the second connector 14 that is furthest from the first connector 13 along the Y direction.

[0082] Furthermore, preferably, the width of the connecting conductor 12 along the Z direction is equal to or greater than the lengths of the first connector 13 and the second connector 14 along the Z direction. However, this is not a limitation; as long as the connection resistance between the connecting conductor 12 and the first connector 13, and the connection resistance between the connecting conductor 12 and the second connector 14 are sufficiently low, the width of the connecting conductor 12 along the Z direction can also be smaller than the lengths of the first connector 13 and the second connector 14 along the Z direction.

[0083] The first input terminal 6 and the second input terminal 7 are conductive components obtained by processing a copper plate. Furthermore, other metal films, such as nickel-containing metal films, are plated onto the surface of the copper plate. The material of the metal film is not particularly limited to this.

[0084] A lead frame, formed by stamping a copper plate, is used to mount components such as the light-emitting element 2, the first MOSFET element 3, the first MOSFET element 4, and the light-receiving driving element 5. The lead frame and each component are then sealed with a light-shielding resin 10a. Furthermore, the semiconductor relay 1 is obtained by partially constructing the first input terminal 6, the second input terminal 7, the first output terminal 8, and the second output terminal 9 from the lead frame. Additionally, a light-transmitting resin 10b is filled between the light-receiving driving element 5 and the light-emitting element 2.

[0085] The first input terminal 6 has a first input-side external terminal portion 61, a wire connection portion 62, and a branch portion 63. The second input terminal 7 has a second input-side external terminal portion 71, a light-emitting element mounting portion 72, and branch portions 73a to 73c. ​​In the semiconductor relay 1, the first input terminal 6 is arranged alongside the second input terminal 7 in the Y direction, but is also separate from the second input terminal 7.

[0086] like Figure 1 , Figure 2 As shown, the first input terminal 6 and the second input terminal 7 each extend downward along the Z direction from one end located inside the housing 10, bend near the lower surface 10L of the housing 10, and extend further outward from the side of the housing 10 along the X direction. The portion of the first input terminal 6 that protrudes outward from the housing 10 is the first input-side external terminal portion 61, and the portion of the second input terminal 7 that protrudes outward from the housing 10 is the second input-side external terminal portion 71.

[0087] like Figure 3 As shown, in the first input terminal 6, one end of a wire 11 is connected to the surface of the wire connection portion 62, and the other end of the wire 11 is connected to the anode electrode 2c of the light-emitting element 2. A branch portion 63 protrudes from the wire connection portion 62 in a Y direction different from the X direction and opposite to the side of the second input terminal 7. The top end of the branch portion 63 is exposed on the side of the housing 10. The branch portion 63 is a portion of the aforementioned lead frame remaining in the first input terminal 6 when the semiconductor relay 1 is disconnected.

[0088] As described above, the light-emitting element 2 is mounted on the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7. Furthermore, similar to the branch portion 63, branches 73a and 73c are portions of the lead frame remaining on the second input terminal 7 when the semiconductor relay 1 is disconnected. The tips of branches 73a and 73c protrude in a Y direction, different from the X direction, and are exposed on the side of the housing 10. Specifically, the tips of branches 73a and 73b protrude in the direction opposite to the input terminal 6, and the tip of branch 73c protrudes in the direction opposite to the tips of branches 73a and 73b. The portions of branches 73a and 73c exposed on the side of the housing 10 can also be coated and fixed with a resin coating or the like.

[0089] The first output terminal 8 has a first output side external terminal portion 81, a first MOSFET mounting portion 82, and a branch portion 83. The second output terminal 9 has a second output side external terminal portion 91, a second MOSFET mounting portion 92, and a branch portion 93.

[0090] like Figure 2 As shown, the first output terminal 8 and the second output terminal 9 each extend downward along the Z direction from one end located inside the housing 10, bending near the lower surface of the housing 10, and the other end extends along the Y direction from the side of the housing 10, further protruding outward from the housing 10. In the first output terminal 8, the portion protruding outward from the housing 10 is the first output-side external terminal portion 81. In the second output terminal 9, the portion protruding outward from the housing 10 is the second output-side external terminal portion 91.

[0091] The first MOSFET mounting portion 82 and the second MOSFET mounting portion 92 are respectively disposed inside the housing 10. The first MOSFET element 3 is mounted on the surface 8a of the first MOSFET mounting portion 82, and the second MOSFET element 4 is mounted on the surface 9a of the second MOSFET mounting portion 92. The first output terminal 8 is arranged in the Y direction alongside the second output terminal 9, but is also separate from the second output terminal 9.

[0092] like Figure 2 As shown, the first MOSFET mounting portion 82 and the second MOSFET mounting portion 92 are spaced apart by a predetermined distance in the X direction (=W1 (refer to) Figure 14 The light-emitting element mounting portion 72 of the second input terminal 7 is opposite to the light-emitting element mounting portion 72 of the second input terminal 7. In addition, the distance W1 is the distance in the X direction between the surfaces 8a and 9a of the first MOSFET mounting portion 82 and the second MOSFET mounting portion 92 and the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7.

[0093] Furthermore, when viewed from the Z direction, the first output-side external terminal 81 is opposite to the first input-side external terminal 61 of the first input terminal 6 in the Y direction. The second output-side external terminal 91 is opposite to the second input-side external terminal 71 of the second input terminal 7 in the Y direction.

[0094] The housing 10 seals and fixes the first input terminal 6, the second input terminal 7, the first output terminal 8, and the second output terminal 9. Furthermore, it goes without saying that the light-emitting element 2 mounted on the second input terminal 7, the first MOSFET element 3 mounted on the first output terminal 8, the second MOSFET element 4 mounted on the second output terminal 9, and the light-receiving driving element 5 are sealed by the housing 10, and their respective positions are fixed. In addition, as described above, the first output-side external terminal portion 81, the second output-side external terminal portion 91, the first input-side external terminal portion 61, and the second input-side external terminal portion 71 each protrude outwards from the housing 10.

[0095] like Figure 2 As shown, the housing 10 is composed of an insulating, light-shielding resin 10a and a light-transmitting resin 10b. The light-shielding resin 10a is, for example, an epoxy resin containing a black pigment. However, it is not particularly limited to this; any material that shields light is acceptable. The light-transmitting resin 10b is disposed between the light-receiving driving element 5 and the light-emitting element 2 and is sealed by the light-shielding resin 10a. The light-transmitting resin 10b is, for example, a transparent silicone resin. However, it is not particularly limited to this; any insulating resin that is transparent at least relative to the light emitted by the light-emitting element 2 is acceptable. The light-transmitting resin 10b constitutes a light coupling portion that optically couples the light-receiving element 51 of the light-receiving driving element 5 and the light-emitting element 2.

[0096] Furthermore, the first input terminal 6 and the second input terminal 7 are electrically insulated from each other by the housing 10 relative to the first output terminal 8 and the second output terminal 9. Moreover, the light-emitting element 2 and the light-receiving driving element 5 are optically coupled. In other words, the semiconductor relay 1 is an input-output isolated type semiconductor relay that switches the output signal on and off via optical coupling while maintaining electrical isolation between the input and output signals.

[0097] [Structure of electrical component unit]

[0098] Figure 8This is a perspective view of an electrical component unit 100 according to an embodiment. The electrical component unit 100 includes at least a semiconductor relay 1 and a circuit board 40. The circuit board 40 is a so-called printed circuit board formed by forming a first wiring 41, a second wiring 42, and a third wiring 43 on the surface of a dielectric substrate 40a made of a dielectric material having a predetermined relative permittivity. Furthermore, a ground plane 45 is formed on the lower surface of the dielectric substrate 40a (see, for example, reference...). Figure 13 The ground plane 45 is formed over the entire back side of the dielectric substrate 40a. Furthermore, the first wiring 41, the second wiring 42, the third wiring 43, and the ground plane 45 are formed by copper plating or the like on the surface or back side of the dielectric substrate 40a.

[0099] The third wiring 43 and the ground plane 45 penetrate the dielectric substrate 40a via a conductive via 44 in the thickness direction, which in this case is in the Z direction (see, for example). Figure 14 It is electrically connected. In addition, the ground plane 45 is electrically connected to the ground potential of the electrical component unit 100. Furthermore, in order to reduce the transmission loss of the transmitted signal, the relative permittivity of the dielectric substrate 40a is set to be low.

[0100] The first wiring 41 is composed of a pair of parallel wirings 41a and 41b, which are spaced apart in the Y direction and have their length direction in the X direction. The first wiring 41 is an input signal line for inputting an input signal to the semiconductor relay 1. One end of each of the pair of wirings 41a and 41b constituting the first wiring 41 is connected to the first input side external terminal portion 61 of the first input terminal 6 and the second input side external terminal portion 71 of the second input terminal 7, respectively. Specifically, the first input side external terminal portion 61 and the second input side external terminal portion 71 are connected to the first wiring in such a way that their respective lower surfaces are in contact with the surfaces of the pair of wirings 41a and 41b constituting the first wiring 41. On the other hand, as Figure 8 As shown, the other end of each of the pair of wirings 41a and 41b constituting the first wiring 41 is an open end.

[0101] The second wiring 42 is composed of a pair of wirings 42a and 42b, which are spaced apart in the Y direction and whose length direction is the Y direction, respectively. The second wiring 42 is an output signal line for the output signal output from the semiconductor relay 1. One end of each of the pair of wirings 42a and 42b constituting the second wiring 42 is connected to the first output side external terminal 81 of the first output terminal 8 and the second output side external terminal 91 of the second output terminal 9. Specifically, the first output side external terminal 81 and the second output side external terminal 91 are connected to the second wiring 42 such that their respective lower surfaces are in contact with the surfaces of the pair of wirings 42a and 42b constituting the second wiring 42. The second wiring 42 is designed as a transmission line with an impedance matching of 50Ω. Alternatively, the second wiring 42 may also be a pair of wirings 42a and 42b that extend elongatedly in the X direction as the length direction.

[0102] The third wiring 43 includes two wirings 43a and 43b arranged with a gap between the ends of a pair of wirings 41a and 41b constituting the first wiring 41, and a wiring 43c arranged on the opposite side in the X direction relative to the two wirings 43a and 43b, separated by the second wiring 42. The three wirings 43a, 43b, and 43c are respectively in the Y direction of their length. As described above, the three wirings 43a, 43b, and 43c included in the third wiring 43 are also electrically connected to the ground potential via the ground plane 45. That is, the third wiring 43 is configured to be separate from the second wiring 42, which is an output signal line, and to surround the second wiring 42, thereby shielding against radiated noise and other noise incident on the second wiring 42.

[0103] In addition, Figure 8 The example shown is a circuit board 40 with only a semiconductor relay 1 mounted on it, but it goes without saying that other components may also be mounted on the circuit board 40.

[0104] [Operation of a semiconductor relay]

[0105] Figure 9 This shows the equivalent circuit diagram of a semiconductor relay. Furthermore, Figure 9 The inductor L1 shown is the parasitic inductance between the source (S) of the first MOSFET element 3 and the source (S) of the second MOSFET element 4, and is not an actual component of the semiconductor relay 1.

[0106] When an input signal is input between the first input terminal 6 and the second input terminal 7, the light-emitting element 2 outputs light of a predetermined wavelength. The light generated by the light-emitting element 2 propagates inside the light-transmitting resin 10b and is received by the light-receiving element 51.

[0107] In the light-receiving element 51, a current is generated through photoelectric conversion, and the drive circuit 52 operates based on this current. Drive signals, which are voltage signals corresponding to the amount of light emitted by the light-emitting element 2, are applied to the first gate electrode 3d of the first MOSFET element 3 and the second gate electrode 4d of the second MOSFET element 4 via the wire 11.

[0108] When the voltage of the drive signal exceeds the threshold voltage of each of the first MOSFET element 3 and the second MOSFET element 4, the source (S)-drain (D) junction of the first MOSFET element 3 and the source (S)-drain (D) junction of the second MOSFET element 4 become switched on. Furthermore, the first output terminal 8 and the second output terminal 9 become switched on via the first MOSFET element 3 and the second MOSFET element 4. Thus, a signal is transmitted between the first output terminal 8 and the second output terminal 9, and subsequently transmitted to the second wiring 42.

[0109] When no input signal is input between the first input terminal 6 and the second input terminal 7, the light emission from the light-emitting element 2 also stops. Correspondingly, no current is generated in the light-receiving element 51, and the driving circuit 52 stops.

[0110] As a result, the voltages of the drive signals applied to the first gate electrode 3d of the first MOSFET element 3 and the second gate electrode 4d of the second MOSFET element 4 decrease. When the voltage of the drive signal is lower than the aforementioned threshold voltage, the source (S)-drain (D) junction of the first MOSFET element 3 and the source (S)-drain (D) junction of the second MOSFET element 4 become disconnected. Furthermore, the first output terminal 8 and the second output terminal 9 become non-conductive. Thus, signal transmission between the first output terminal 8 and the second output terminal 9 is interrupted.

[0111] [Effects, etc.]

[0112] As described above, the semiconductor relay 1 of this embodiment is mounted on the circuit board 40.

[0113] The semiconductor relay 1 includes at least a light-emitting element 2, a first MOSFET element 3, a second MOSFET element 4, a light-receiving driving element 5, a first input terminal 6, a second input terminal 7, a first output terminal 8, a second output terminal 9, a housing 10, and a connecting conductor 12.

[0114] The light-emitting element 2 is electrically connected to the first input terminal 6 and the second input terminal 7.

[0115] The light-receiving driving element 5 has a light-receiving element 51 that receives the light output from the self-emitting element 2 and outputs a driving signal.

[0116] The first output terminal 8 has a first MOSFET mounting section 82, and the second output terminal 9 has a second MOSFET mounting section 82.

[0117] The first MOSFET element 3 has a first gate electrode 3d, a first source electrode 3e, and a first drain electrode 3f. The first source electrode 3e is electrically connected to the light-receiving driving element 5, and the first drain electrode 3f is electrically connected to the first output terminal 8.

[0118] The second MOSFET element 4 has a second gate electrode 4d, a second source electrode 4e, and a second drain electrode 4f. The second source electrode 4e is electrically connected to the light-receiving driving element 5, and the second drain electrode 4f is electrically connected to the second output terminal 9.

[0119] The connecting conductor 12 is electrically connected to the first source electrode 3e and the second source electrode 4e.

[0120] The first MOSFET element 3 has a first surface 3a and a first back surface 3b, the first back surface 3b being located on the opposite side of the first surface 3a and mounted on the first MOSFET mounting portion 82.

[0121] The first surface 3a has a first mounting portion 3a1 and a first non-mounted portion 3a2. A first source electrode 3e is formed in the first mounting portion 3a1, and a light-receiving driving element 5 is mounted thereon. A first gate electrode 3d is formed in the first non-mounted portion 3a2, but the light-receiving driving element 5 is not mounted thereon.

[0122] The second MOSFET element 4 has a second surface 4a and a second back surface 4b, the second back surface 4b being located on the opposite side of the second surface 4a and mounted on the second MOSFET mounting portion 92.

[0123] The second surface 4a has a second mounting portion 4a1 and a second non-mounted portion 4a2. A second source electrode 4e is formed in the second mounting portion 4a1, and a light-receiving driving element 5 is mounted thereon. A second gate electrode 4d is formed in the second non-mounted portion 4a2, but the light-receiving driving element 5 is not mounted thereon.

[0124] The direction in which the light-receiving driving element 5 and the first MOSFET element 3 are arranged, and the direction in which the light-receiving driving element 5 and the second MOSFET element 4 are arranged, are set as the X direction. The direction in which the first output terminal 8 and the second output terminal 9 are arranged is set as the Y direction. The direction that is orthogonal to both the X and Y directions is set as the Z direction.

[0125] The connecting conductor 12 has a first connecting conductor portion 12a, a second connecting conductor portion 12b, and a third connecting conductor portion 12c. The first connecting conductor portion 12a is disposed between the light-receiving driving element 5 and the first source electrode 3e. The second connecting conductor portion 12b is disposed between the light-receiving driving element 5 and the second source electrode 4e. The third connecting conductor portion 12c electrically connects the first connecting conductor portion 12a and the second connecting conductor portion 12b, and has a portion that overlaps with the light-receiving driving element when viewed along the X direction.

[0126] The connecting conductor 12 is a layered or sheet-like conductive component formed on the back surface 5b of the light-receiving driving element 5.

[0127] By constructing the semiconductor relay 1 in this way, the parasitic inductance component on the output side of the semiconductor relay 1 can be reduced, thereby lowering insertion loss. This will be further explained in comparison with the existing structure disclosed in Patent Document 1.

[0128] Figure 10A This is a diagram showing the signal path in a semiconductor relay. Figure 10B This is another diagram showing the signal path in a semiconductor relay. Figure 10C This is another diagram showing the signal path in a semiconductor relay.

[0129] Figure 11 The semiconductor relay is a comparative example. Figure 2 A fairly accurate diagram. Figure 12 This is a comparison diagram of the signal path in the semiconductor relay of Embodiment 1 and the signal path in the semiconductor relay of the comparative example. Figure 13 This is a schematic diagram showing the distribution of parasitic capacitance in a comparative example semiconductor relay. Furthermore, in Figures 10A to 10C and Figure 12 The diagram illustrates the transmission of a signal from the second output terminal 9 to the first output terminal 8. Additionally, there exists a situation where... Figures 11-13 And shown later Figure 14 , Figure 15 In the middle, to and Figures 1 to 8 The same parts shown are labeled with the same reference numerals, and detailed descriptions are omitted.

[0130] like Figures 10A to 10C As shown, the signal path from the second source electrode 4e of the second MOSFET element 4 to the first source electrode 3e of the first MOSFET element 3 in the signal path transmitted from the second output terminal 9 to the first output terminal 8 includes a connecting conductor 12.

[0131] As described above, the connecting conductor 12 is a layered or sheet-like conductive member formed over the entire back surface 5b of the light-receiving driving element 5. That is, the periphery of the connecting conductor 12 substantially overlaps with the periphery of the back surface 5b of the light-receiving driving element 5. Therefore, the signal is transmitted in the connecting conductor 12 in a planar extended state. Figure 10A , Figure 10B (planar path).

[0132] on the other hand, Figure 11 The conventional semiconductor relay 20 shown differs from the semiconductor relay 1 of this embodiment in the following aspects. First, a third element mounting portion 16 is provided above and separated from the first output terminal 8 and the second output terminal 9 along the Z direction. Next, a light-receiving driving element 5 is mounted on the surface 16a of the third element mounting portion 16. That is, the light-receiving driving element 5 is arranged above and separated from the first MOSFET element 3 and the second MOSFET element 4 along the Z direction.

[0133] In addition, the second source electrode 4e of the second MOSFET element 4 and the first source electrode 3e of the first MOSFET element 3 are connected by two wires 11, which form the signal path.

[0134] Here, the parasitic inductance components on the output side of the semiconductor relay 1 of this embodiment and the conventional semiconductor relay 20 are investigated. In both semiconductor relay 1 and semiconductor relay 20, the inductance component related to the signal path between the second source electrode 4e of the second MOSFET element 4 and the first source electrode 3e of the first MOSFET element 3 is equivalent to the aforementioned L1.

[0135] The inductance per unit length of the conductor 11 along the signal path is approximately proportional to the logarithm of the inverse of the conductor diameter. On the other hand, if the connecting conductor 12 is considered a flat conductor, the width of the connecting conductor 12 in the Z direction (the width of the connecting conductor 12 in the direction intersecting the signal path) can be made larger than the width of the connecting conductor 12 in the X direction (the thickness of the flat conductor). Therefore, in Figures 1-5 In the example shown, for the inductance per unit length of the connecting conductor 12 along the signal path, the influence of the width (thickness of the flat conductor) in the X direction of the connecting conductor 12 becomes smaller, with the component proportional to the logarithm of the inverse of the width in the Z direction becoming dominant. The width of the connecting conductor 12 in the Z direction is several to ten times larger than the diameter of the wire 11. Therefore, compared to the conventional semiconductor relay 20 using the wire 11, the semiconductor relay 1 of this embodiment using the connecting conductor 12 has a smaller inductance per unit length along the signal path.

[0136] In other words, compared to the existing semiconductor relay 20, the semiconductor relay 1 of this embodiment can reduce the parasitic inductance component, resulting in reduced insertion loss. Furthermore, by reducing the inductance along the signal path, the characteristic impedance mismatch of the signal path can be reduced. This improves the reflection characteristics within the signal path, thereby further reducing insertion loss.

[0137] Furthermore, according to this embodiment, by reducing the capacitive coupling with the ground potential, the influence of resonance based on the stub can be reduced. This will be further explained.

[0138] Both the existing semiconductor relay 20 and the semiconductor relay 1 of this embodiment use the wire 11 connecting the source electrode 5c of the light-driven element 5 and the first source electrode 3e of the first MOSFET element 3 as a stub in a high-frequency circuit.

[0139] If the parasitic capacitance between the source (S) of the first MOSFET element 3 and the ground potential, and the parasitic capacitance between the source (S) of the second MOSFET element 4 and the ground potential are set as C, and the inductance of the wire 11, which acts as a stub, is set as L, then the resonant frequency fc of the resonant circuit formed by the parasitic capacitance and the wire 11 satisfies the relationship shown in equation (1).

[0140] fc = (1 / 2π) × (LC) -1 / 2 …(1)

[0141] like Figure 12 As shown in the left-hand diagram, in the existing semiconductor relay 20, the second source electrode 4e of the second MOSFET element 4 and the third element mounting portion 16 are connected by a wire 11. Thus, the light-driven element 5 and the second MOSFET element 4 are electrically connected via the third element mounting portion 16. Furthermore, the wire 11 also functions as a short stub. Additionally, the parasitic capacitance value C in the existing semiconductor relay 20 is supplemented by the parasitic capacitance value between the third element mounting portion 16 and the ground potential.

[0142] In addition, such as Figure 12 As shown in the left-hand figure, in the existing semiconductor relay 20, the light-receiving driving element 5 is configured separately above the first MOSFET element 3 and the second MOSFET element 4 along the Z direction. Therefore, the length of the wire 11 connecting the source electrode 5c of the light-receiving driving element 5 and the first source electrode 3e of the first MOSFET element 3 is greater than that of the first source electrode 3e of the first MOSFET element 3. Figure 12The conductor 11 in the semiconductor relay 1 of this embodiment shown on the right is long. Therefore, the inductance value L mentioned above is also larger in the conventional semiconductor relay 20 than in the semiconductor relay 1 of this embodiment.

[0143] In other words, for the resonant frequency fc shown in equation (1), the existing semiconductor relay 20 is lower than the semiconductor relay 1 of this embodiment.

[0144] Therefore, in the existing semiconductor relay 20, the effect of resonance based on the stub is more pronounced on the low-frequency side compared to the semiconductor relay 1 of this embodiment. On the other hand, in the semiconductor relay 1 of this embodiment, the frequency characteristic of the insertion loss shifts generally towards the high-frequency side compared to the frequency characteristic in the existing semiconductor relay 20, which can suppress signal attenuation at the high-frequency side. In other words, for the semiconductor relay 1 of this embodiment, the high-frequency characteristics are improved regarding insertion loss compared to the existing semiconductor relay 20.

[0145] Furthermore, in the existing semiconductor relay 20, the light-driven element 5, the first MOSFET element 3, and the second MOSFET element 4 are in... Figure 11 , Figure 12 The configuration relationship is shown.

[0146] The result is, as Figure 13 As shown, in the existing semiconductor relay 20, parasitic capacitance is generated between the ground potential and the third element mounting portion 16 due to capacitive coupling. Furthermore, parasitic capacitance based on capacitive coupling is generated between the first output terminal 8 and the second output terminal 9 on the output side, and between the third element mounting portion 16 and the first input terminal 6 and the second input terminal 7. Due to these parasitic capacitances, the aforementioned insertion loss occurs when a signal is transmitted between the first output terminal 8 and the second output terminal 9. Moreover, the insertion loss increases more significantly as the signal becomes higher frequency.

[0147] On the other hand, in the semiconductor relay 1 of this embodiment, the following is omitted. Figure 11 , Figure 12 The third component mounting section 16 shown is as follows: Figure 1 and Figure 2 As shown, the light-receiving drive element 5 is mounted across the first mounting portion 3a1 of the first MOSFET element 3 and the second mounting portion 4a1 of the second MOSFET element 4. This reduces both capacitive coupling to ground potential and capacitive coupling between the input and output sides.

[0148] In addition, since the coupling capacitance between the stub region and the ground potential can be reduced, the insertion loss can be reduced.

[0149] Figure 14 This is a schematic diagram used to illustrate the effect of reducing capacitive coupling on the input and output sides. Figure 15 This is a schematic diagram used to illustrate the effect of reducing capacitive coupling with ground potential.

[0150] like Figure 14 As shown, by omitting the third element mounting portion 16, the height H1 in the Z direction of the semiconductor relay 1 in this embodiment is lower than the height H2 in the Z direction of the conventional semiconductor relay 20. In other words, a smaller semiconductor relay 1 with a lower height can be achieved.

[0151] Furthermore, consider the following scenario: In the existing semiconductor relay 20, miniaturization can be achieved by reducing the size of the first MOSFET element 3 and the second MOSFET element 4. For example, by reducing the size in the Z direction of each MOSFET element of the first MOSFET element 3 and the second MOSFET element 4, the height of the semiconductor relay 20 can be reduced.

[0152] However, reducing the size of the first MOSFET element 3 and the second MOSFET element 4 will increase their respective on-resistance. Especially in vertical MOSFETs, the drain resistance contributes significantly to the on-resistance. Reducing the area of ​​the first MOSFET element 3 and the second MOSFET element 4 results in a smaller drain area, which in turn increases the on-resistance. As a result, there is a concern about a decrease in the high-frequency characteristics of the signal transmitted by the semiconductor relay 20.

[0153] On the other hand, in the semiconductor relay 1 according to this embodiment, the light-receiving driving element 5 is mounted across the first mounting portion 3a1 of the first MOSFET element 3 and the second mounting portion 4a1 of the second MOSFET element 4. Therefore, the first MOSFET element 3 and the second MOSFET element 4 each maintain a certain size, and the height of the semiconductor relay 1 can be reduced. In particular, since the drain area of ​​each of the first MOSFET element 3 and the second MOSFET element 4 is not significantly reduced, the increase in on-resistance can be suppressed, and the degradation of the high-frequency characteristics of the signal transmitted by the semiconductor relay 1 can be suppressed.

[0154] Furthermore, by omitting the third element mounting section 16, the electrode area on the output side, which contributes to parasitic capacitance, can be significantly reduced. In other words, capacitive coupling between the input and output sides is reduced, and insertion loss is lowered. Additionally, as... Figure 14As shown, by making the distance W1 longer than the distance W2, the capacitive coupling between the input and output sides can be further reduced, thereby further reducing the insertion loss. Here, the distance W2 is the X-direction distance between the surface 8a of the first MOSFET mounting portion 82 and the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7, the X-direction distance between the surface 9a of the second MOSFET mounting portion 92 and the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7, and the X-direction distance between the surface 16a of the third element mounting portion 16 and the surface 7a of the light-emitting element mounting portion 72 of the second input terminal 7.

[0155] In addition, such as Figure 15 As shown, the parasitic capacitance generated between the third element mounting section 16 and the ground potential disappears because the insertion loss of the parasitic capacitance decreases.

[0156] The semiconductor relay 1 also has a connector that connects the connecting conductor 12 to the first source electrode 3e of the first MOSFET element 3 and connects the connecting conductor 12 to the second source electrode 4e of the second MOSFET element 4.

[0157] The connector includes a first connector 13 and a second connector 14. The first connector 13 is a conductor formed on the surface of the first source electrode 3e, and the second connector 14 is a conductor formed on the surface of the second source electrode 4e.

[0158] Thus, by providing the first connector 13 and the second connector 14, the connecting conductor 12 and the first source electrode 3e can be reliably connected, as well as the connecting conductor 12 and the second source electrode 4e can be connected.

[0159] In addition, when the light-receiving drive element 5 is installed on the first surface 3a of the first MOSFET element 3 and the second surface 4a of the second MOSFET element 4, the pressure on the first MOSFET element 3 and the second MOSFET element 4 during installation can be mitigated by making the first connector 13 and the second connector 14 as buffer materials.

[0160] There is a situation where if a predetermined pressure is applied to both the first MOSFET element 3 and the second MOSFET element 4, the characteristics of the MOSFETs contained therein will change, or in extreme cases, the first MOSFET element 3 and the second MOSFET element 4 will break.

[0161] On the other hand, according to this embodiment, by providing the first connector 13 and the second connector 14, the aforementioned adverse conditions can be avoided, and the characteristics of the first MOSFET element 3 and the second MOSFET element 4 can be stabilized. Furthermore, adverse conditions in the assembly process can be reduced, and the manufacturing yield of the semiconductor relay 1 can be improved.

[0162] Preferably, the connecting conductor 12 is formed over the entire back surface 5b of the light-receiving driving element 5.

[0163] This allows for the widest possible Z-direction width of the connecting conductor 12 in the signal path. Consequently, parasitic inductance is reduced, leading to lower insertion loss. Furthermore, by reducing the characteristic impedance mismatch in the signal path, reflection characteristics within the signal path are improved, further reducing insertion loss.

[0164] Furthermore, from the viewpoint of reducing impedance along the signal path, the width of the connecting conductor 12 in the Z direction is preferably greater than or equal to the length of the first connecting body 13 and the second connecting body 14 in the Z direction.

[0165] Furthermore, the width of the connecting conductor 12 in the Y direction only needs to be equal to or greater than the Y-direction spacing between the first connector 13 and the second connector 14. Thus, the connecting conductor 12 and the first connector 13, as well as the connecting conductor 12 and the second connector 14, can be reliably electrically connected.

[0166] The first surface 3a of the first MOSFET element 3 has a first unit region 3c formed as a functional unit of the MOSFET, and the second surface 4a of the second MOSFET element 4 has a second unit region 4c formed as a functional unit of the MOSFET.

[0167] Inside the semiconductor relay 1, the first connecting conductor portion 12a of the connecting conductor 12 is formed away from the first unit region 3c in the Z direction, in other words, it is formed away from the first MOSFET element 3 along its length. The second connecting conductor portion 12b of the connecting conductor 12 is formed away from the second unit region 4c in the Z direction, in other words, it is formed away from the second MOSFET element 4 along its length.

[0168] Therefore, the unformed regions of the first unit region 3c of the first MOSFET element 3 and the second unit region 4c of the second MOSFET element 4, that is, the non-formed regions of the functional units, are connected and fixed to the connecting conductor 12 via the first connector 13 and the second connector 14. Thus, when the light-receiving driving element 5 is mounted on the first surface 3a of the first MOSFET element 3 and the second surface 4a of the second MOSFET element 4, adverse conditions such as changes in the characteristics of the MOSFETs contained in the first unit region 3c and the second unit region 4c can be avoided.

[0169] Furthermore, in the first MOSFET element 3, the first mounting portion 3a1 and the first gate electrode 3d are arranged along the Z direction. Similarly, in the second MOSFET element 4, the second mounting portion 4a1 and the second gate electrode 4d are arranged along the Z direction.

[0170] The light-emitting element 2 and the light-receiving driving element 5 are arranged opposite each other with a predetermined interval along the X direction. The light-receiving driving element 5 is arranged between the light-emitting element 2 and the first MOSFET element 3, and between the light-emitting element 2 and the second MOSFET element 4.

[0171] By configuring the semiconductor relay 1 with the aforementioned structure, it is possible to suppress the increase in size of the semiconductor relay 1 in the Z direction, thereby achieving a reduction in height and miniaturization of the semiconductor relay 1.

[0172] The first input terminal 6 has a first input side external terminal portion 61 that is exposed to the outside from the housing 10 along the lower surface of the housing 10, and the second input terminal 7 has a second input side external terminal portion 71 that is exposed to the outside from the housing 10 along the lower surface of the housing 10.

[0173] The first output terminal 8 has a first output side external terminal portion 81 that is exposed to the outside from the housing 10 along the lower surface of the housing 10, and the second output terminal 9 has a second output side external terminal portion 91 that is exposed to the outside from the housing 10 along the lower surface of the housing 10.

[0174] Thus, a surface-mount type semiconductor relay 1 can be realized by setting the lower surface of the housing 10 as the mounting surface.

[0175] The electrical component unit 100 of this embodiment includes at least a semiconductor relay 1 and a circuit board 40. The circuit board 40 is formed by forming a first wiring 41, a second wiring (wiring layer) 42, and a third wiring (ground layer) 43 on the surface of a dielectric substrate (dielectric layer) 40a, and forming a ground plane (ground layer) 45 on the back side of the dielectric substrate (dielectric layer) 40a.

[0176] The first wiring 41 is connected to the first input terminal 6 and the second input terminal 7 of the semiconductor relay 1, respectively. The second wiring 42 is connected to the first output terminal 8 and the second output terminal 9 of the semiconductor relay 1, respectively.

[0177] Furthermore, the first wiring 41 is an input wiring for a signal input to the semiconductor relay 1, and the second wiring 42 is an output wiring (signal line) for a signal output from the semiconductor relay 1.

[0178] According to the electrical component unit 100 of this embodiment, the signal output from the semiconductor relay 1 can be passed through and cut off in a simple structure.

[0179] In addition, a third wiring 43 is formed on the upper surface of the circuit board 40 in a manner that is separate from and surrounds the second wiring 42. The third wiring 43 is electrically connected to a ground plane 45 formed on the lower surface of the circuit board 40, and the ground plane 45 is electrically connected to a ground potential.

[0180] By configuring the third wiring 43, which is connected to the ground potential, in a manner that surrounds the second wiring 42, it is possible to suppress radiated noise and other noise that may interfere with the transmission signal propagating in the second wiring 42. Furthermore, it is possible to suppress radiated noise and other noise from propagating from the second wiring 42 to other electronic components mounted on the circuit board 40. Additionally, it is possible to easily construct a signal transmission circuit for transmitting high-frequency signals that are passed through or cut off using the semiconductor relay 1.

[0181] (Implementation Method 2)

[0182] Figure 16 This is a perspective view of the semiconductor relay according to embodiment 2. Figure 17 From Figure 16 The side view obtained by observing the semiconductor relay of Embodiment 2 from the direction shown in D. Figure 18 From Figure 17 The diagram is obtained by observing the first and second input terminals, which house the light-emitting elements, from the direction E shown. Figure 19 From Figure 17 The diagram shown is obtained by observing the first output terminal and the second output terminal, which are equipped with a light-driven element, a first MOSFET element, and a second MOSFET element, from the direction F shown.

[0183] In addition, Figure 16 In the figures shown thereafter, the same reference numerals are used for the same parts as in Embodiment 1, and detailed descriptions are omitted.

[0184] The semiconductor relay 30 of this embodiment differs from the semiconductor relay 1 of Embodiment 1 in the following aspects.

[0185] like Figures 16-19 As shown, the first mounting portion 3a1 of the first MOSFET element 3 is positioned below the first gate electrode 3d along the Z direction. Similarly, the second mounting portion 4a1 of the second MOSFET element 4 is positioned below the second gate electrode 4d along the Z direction.

[0186] In contrast, such as Figures 1 to 4C As shown, in the semiconductor relay 1 of Embodiment 1, the first mounting portion 3a1 of the first MOSFET element 3 is positioned above the first gate electrode 3d along the Z direction. Similarly, the second mounting portion 4a1 of the second MOSFET element 4 is positioned above the second gate electrode 4d along the Z direction.

[0187] Figure 20 This is a schematic diagram comparing the signal path on the output side in Embodiment 1 and the signal path on the output side in Embodiment 2. Figure 21 This diagram compares the configuration relationships of the first input terminal, the second input terminal, and the light-emitting element in Embodiment 1 with those in Embodiment 2.

[0188] like Figure 20 As shown, in the semiconductor relay 30 of this embodiment, compared with the semiconductor relay 1 of embodiment 1, the signal path passing through the connecting conductor 12 provided on the back side 5b of the light-receiving driving element 5 passes near the first output terminal 8 and the second output terminal 9.

[0189] In other words, according to this embodiment, compared to the semiconductor relay 1 of Embodiment 1, the signal path can be further shortened, and the parasitic inductance component can be reduced. As a result, insertion loss can be further reduced. In addition, by reducing the inductance along the signal path, the characteristic impedance mismatch of the signal path can be reduced. Therefore, compared to the case shown in Embodiment 1, the reflection characteristics within the signal path can be improved, thereby reducing insertion loss.

[0190] Furthermore, according to this embodiment, compared to the case shown in Embodiment 1, the light-receiving driving element 5 can be positioned close to the lower surface of the housing 10, which serves as the mounting surface to the circuit board 40. Additionally, as a result, compared to the case shown in Embodiment 1, the light-emitting element mounting portion 72 can be positioned close to the lower surface of the housing 10.

[0191] Therefore, the height of the second input terminal 7, which has the light-emitting element mounting portion 72, can be reduced, and correspondingly, the height of the first input terminal 6 can also be reduced. As a result, compared with the case shown in Embodiment 1, the area of ​​the portions of the first input terminal 6 and the second input terminal 7 that are opposite to the first output terminal 8 and the second output terminal 9 can be reduced.

[0192] When the area of ​​the portions of the first input terminal 6 and the second input terminal 7 that are opposite to the first output terminal 8 and the second output terminal 9 increases, the capacitive coupling on the input side and the output side increases, thereby increasing the insertion loss.

[0193] According to this embodiment, as described above, compared to the case shown in Embodiment 1, the area of ​​the portions opposite to the first output terminal 8 and the second output terminal 9 can be reduced.

[0194] This reduces capacitive coupling between the input and output sides, thereby lowering insertion loss. Additionally, it suppresses ripple generation on the input side.

[0195] In addition, such as Figure 19 As shown, in this embodiment, the branch portions 73a to 73c provided in the second input terminal 7 are positioned above the light-emitting element 2 along the Z direction.

[0196] Therefore, the stiffness along the Z direction can be improved in the second input terminal 7.

[0197] In addition, the second input terminal 7 in this embodiment has a light-emitting element mounting part 72 for mounting the light-emitting element 2 and an exposed part that is exposed to the outside from the housing 10.

[0198] The exposed portion includes a second input-side external terminal portion 71 and branch portions 73a to 73c. ​​The second input-side external terminal portion 71 is configured to be connected to the circuit board 40, while the branch portions 73a to 73c are configured not to be connected to the circuit board 40. In addition, the branch portions 73a and 73c are positioned above the light-emitting element 2 along the Z direction.

[0199] like Figure 17 As shown, the height H7 from the lower surface 10L of the housing 10 to the upper end of the input terminal 7 is lower than the height H5 from the lower surface 10L of the housing 10 to the upper end of the light-receiving driving element 5. By making the input terminal 7 lower, the capacitive coupling between the input terminal 7 and the light-receiving driving element 5 is reduced, thereby improving high-frequency characteristics.

[0200] <Variation Example 1>

[0201] Figure 22The first output terminal and the second output terminal of the modified example 1, which are equipped with a light-receiving driving element, a first MOSFET element, and a second MOSFET element, are connected to... Figure 4A A fairly accurate diagram.

[0202] like Figure 22 As shown, in this modified example of the semiconductor relay 31, the difference from the semiconductor relay 1 of embodiment 1 is that a wire 11 is provided to connect the first source electrode 3e of the first MOSFET element 3 and the second source electrode 4e of the second MOSFET element 4.

[0203] Specifically, in the semiconductor relay 31 of this modified example, the first amplification electrode portion 3e2 of the first source electrode 3e and the second amplification electrode portion 4e2 of the second source electrode 4e are connected by a wire 11 serving as the third connector 11a. As described above, the first amplification electrode portion 3e2 of the first source electrode 3e is formed in the first non-mounted portion 3a2 of the first MOSFET element 3, and the second amplification electrode portion 4e2 of the second source electrode 4e is formed in the second non-mounted portion 4a2 of the second MOSFET element 4. The third connector 11a does not overlap with the light-receiving driving element 5 and the connecting conductor 12 when viewed along the X direction.

[0204] According to this modified example, a wire 11 connecting the first amplifying electrode 3e2 and the second amplifying electrode 4e2 is provided at a position closer to the first output terminal 81 and the second output terminal 91 than the connecting conductor 12. In other words, by providing the wire 11 at a position that shortens the signal path, the inductance along the signal path can be reduced. Therefore, compared to the case shown in Embodiment 1, insertion loss can be reduced.

[0205] <Variation Example 2>

[0206] Figure 23 Modification 2 is a device that houses a light-receiving driving element, a first MOSFET element, and a second MOSFET element at its first output terminal and second output terminal. Figure 4B A fairly accurate diagram.

[0207] The difference between the semiconductor relay 32 in this modified example and the semiconductor relay 1 in embodiment 1 is that it has a third connector 15 to connect the first source electrode 3e of the connecting conductor 12 and the first MOSFET element 3, and to connect the second source electrode 4e of the connecting conductor 12 and the second MOSFET element 4.

[0208] like Figure 23As shown, the third connector 15 is a layered or sheet-like conductor disposed on the surface of the connecting conductor 12, which, together with the connecting conductor 12, electrically connects the first connector 13 and the second connector 14. Furthermore, the width of the third connector 15 in the Y and Z directions is approximately equal to the width of the connecting conductor 12 in the Y and Z directions.

[0209] According to this modified example, the third connector 15, which serves as a conductor, is arranged side-by-side with respect to the connecting conductor 12, and the first source electrode 3e of the first MOSFET element 3 and the second source electrode 4e of the second MOSFET element 4 are electrically connected via the first connector 13 and the second connector 14. This reduces the inductance along the signal path and lowers insertion loss.

[0210] Furthermore, since the third connector 15 is layered or sheet-like, it is possible to suppress the situation where the connection distance along the X direction between the light-receiving drive element 5 and the first MOSFET element 3, and the connection distance along the X direction between the light-receiving drive element 5 and the second MOSFET element 4, becomes longer. This reduces the inductance along the signal path and lowers insertion loss.

[0211] Furthermore, in this modified example, the third connector 15 is a conductive chip mounting film, that is, a semiconductor adhesive film mixed with conductive fillers, but it is not particularly limited to this. For example, the third connector 15 may also be a metal film. If the third connector 15 is a conductive chip mounting film, then when it is connected to the first connector 13, the second connector 14, or the connecting conductor 12 respectively, there is no need to provide additional adhesive materials, etc. In addition, the third connector 15 serves as a buffer material when mounting the light-receiving driving element 5 to the first MOSFET element 3 and the second MOSFET element 4, which can reduce the impact of the pressure applied to the first MOSFET element 3 and the second MOSFET element 4 during mounting.

[0212] (Implementation Method 3)

[0213] Figure 24 This is a perspective view of the semiconductor relay according to embodiment 3. Figure 24 The semiconductor relay 33 of Embodiment 3 shown differs from the semiconductor relay 1 of Embodiment 1 in the following aspects.

[0214] First, in the first output terminal 8 and the second output terminal 9, the normal direction of the surface 8a of the first MOSFET mounting portion 82 and the surface 9a of the second MOSFET mounting portion 92 is the Z direction. Therefore, the light-receiving driving element 5 and the first MOSFET element 3 are stacked along the Z direction, and the light-receiving driving element 5 and the second MOSFET element 4 are stacked along the Z direction. In addition, the normal direction of the surface 5a of the light-receiving driving element 5, which serves as the light-receiving surface, is also the Z direction.

[0215] In the semiconductor relay 1 of Embodiment 1, the light-receiving driving element 5 and the first MOSFET element 3 are stacked along the X direction, and the light-receiving driving element 5 and the second MOSFET element 4 are stacked along the X direction. Furthermore, the normal direction of the surface 5a of the light-receiving element 5, which serves as the light-receiving surface, is also the X direction. The semiconductor relay of Embodiment 3 differs from that of Embodiment 1 in that the normal direction of the surface 5a of the light-receiving element, which serves as the light-receiving surface, is the Z direction, while the light-emitting surface of the light-emitting element is in the X direction; they are not arranged opposite each other.

[0216] Furthermore, in this case, the lower surfaces 8b and 9b of the back surfaces of the first MOSFET mounting portion 82 and the second MOSFET mounting portion 92, respectively, along the Z direction, are exposed from the back surface of the housing 10, becoming mounting surfaces with the circuit board 40. In other words, the back surface 8b of the first MOSFET mounting portion 82 is equivalent to... Figures 1 to 4C The back surface 9b of the first output-side external terminal portion 81 and the second MOSFET mounting portion 92 shown corresponds to... Figures 1 to 4C The second output side external terminal section 91 is shown.

[0217] Additionally, in the second input terminal 7, a branch 73 protrudes from the side of the light-emitting element mounting portion 72 along the Y direction. The branch 73 is positioned above the light-emitting element 2 along the Z direction.

[0218] In addition, from Figure 24 As can be seen, when viewed along the Z direction, the first electrode body 3e1 and the second electrode body 4e1 have portions that overlap with the light-receiving driving element 5.

[0219] In this embodiment, the same effects as those achieved by the structure shown in Embodiment 1 are achieved. That is, the parasitic inductance component can be reduced, resulting in lower insertion loss. Furthermore, by reducing the inductance along the signal path, the characteristic impedance mismatch of the signal path can be reduced. This improves reflection characteristics within the signal path, thereby further reducing insertion loss. Moreover, the degradation of high-frequency characteristics of the transmitted signal can be suppressed, and impedance mismatch in the signal transmission path can be reduced.

[0220] Furthermore, by shortening the wire 11 connecting the source electrode 5c of the light-receiving drive element 5 and the first source electrode 3e of the first MOSFET element 3, the length of the component that functions as a stub can be reduced. This reduces the characteristic impedance of the signal path, thereby improving the signal reflection characteristics within the signal path and further reducing insertion loss. Additionally, by reducing the inductive components of the output terminals 8 and 9, as well as the capacitive components caused by the relative positions of the input terminals 6 and 7 and the output terminals 8 and 9, insertion loss can be further reduced.

[0221] (Other implementation methods)

[0222] New embodiments can also be constructed by appropriately combining the constituent elements shown in Embodiments 1-3 and Modifications 1-3. For example, the third connector 15 shown in Modification 2 can be applied to the semiconductor relay 30 shown in Embodiment 2 and the semiconductor relay 33 shown in Embodiment 3. In addition, the first MOSFET element 3 and the second MOSFET element 4 shown in Modification 3 can be applied to the semiconductor relays 1, 30, and 33 shown in Embodiments 1-3. Examples are described below.

[0223] Figure 25 This is a perspective view of another semiconductor relay 34 in Embodiment 3. Figure 25 In the middle, to and Figure 24 In the illustrated embodiment 3, the same parts of the semiconductor relay 33 are labeled with the same reference numerals. Figure 25 In order to understand the structure of the main parts, the illustration of the light-shielding resin 10a of the housing 10 is omitted. In the semiconductor relay 34, the surface 2a of the light-emitting element 2 that emits light by setting the anode electrode 2c is opposite to the surface 5a of the light-receiving driving element 5 in the Z direction.

[0224] Figure 26 This is a perspective view of another semiconductor relay 35 according to embodiment 3. Figure 26 In the middle, to and Figure 25 The same parts of the semiconductor relay 34 shown are labeled with the same reference numerals. Figure 26 To understand the structure of the main parts, the illustration of the light-shielding resin 10a of the housing 10 is omitted. In the semiconductor relay 35, the surface 2a of the light-emitting element 2, which emits light by setting the anode electrode 2c, faces the X direction, while the surface 5a of the light-receiving drive element 5, which receives light, faces the Z direction, which is perpendicular to the X direction. Thus, the surface 2a of the light-emitting element 2 and the surface 5a of the light-receiving drive element 5 are perpendicular, and the light emitted from the surface 2a of the light-emitting element 2 is guided by the light-transmitting resin 10b and received by the surface 5a of the light-receiving drive element 5.

[0225] Figure 27 This is a perspective view of another semiconductor relay 36 in Embodiment 2. Figure 27 In the middle, to and Figure 16 The same parts of the semiconductor relay 30 in Embodiment 2 are labeled with the same reference numerals. Figure 27 To understand the structure of the main parts, the illustration of the light-shielding resin 10a of the housing 10 is omitted. In the semiconductor relay 36, the terminal of the light-receiving drive element 5 connected to the source electrode of the second MOSFET element 4 is located at the upper end of the surface 5a and connected to the source electrode of the second MOSFET element 4 via the wire 11. According to this structure, the wire 11 connecting the source electrodes of the light-receiving drive element 5 and the MOSFET element 4 can be shortened, and the frequency of the resonance generated by the stub wire can be shifted to the higher frequency side.

[0226] Figure 28 This is a perspective view of another semiconductor relay 37 according to Embodiment 1. Figure 28 In the middle, to and Figure 1 The same parts of the semiconductor relay 1 in Embodiment 1 shown are labeled with the same reference numerals. Figure 28 In order to understand the structure of the main parts, the illustration of the light-shielding resin 10a of the housing 10 is omitted. In the semiconductor relay 37, the terminal of the light-driven element 5 connected to the source electrode of the second MOSFET element 4 is located at the lower end of the surface 5a and is connected to the source electrode of the second MOSFET element 4 connected to the wire 11.

[0227] Figure 29 This is a perspective view of another semiconductor relay 38 according to embodiment 3. Figure 29 In the middle, to and Figure 25 The same parts of the semiconductor relay 34 shown are labeled with the same reference numerals. Figure 29 In order to understand the structure of the main parts, the illustration of the light-shielding resin 10a of the housing 10 is omitted. In the semiconductor relay 38, the surface 2a of the light-emitting element 2 that emits light by setting the anode electrode 2c is opposite to the surface 5a of the light-receiving drive element 5 in the Z direction. Furthermore, the output terminals 8 and 9 and the MOSFET elements 3 and 4 have a shape that extends elongatedly in the X direction. According to this structure, the wire 11 connecting the source electrodes of the light-receiving drive element 5 and the MOSFET element 4 can be shortened, and the frequency of the resonance generated by the short wire can be shifted to the higher frequency side.

[0228] Figure 30 This is a perspective view of another semiconductor relay 39 according to embodiment 3. Figure 30 In the middle, to and Figure 26 The same parts of the semiconductor relay 35 shown are labeled with the same reference numerals. Figure 30In this diagram, the light-shielding resin 10a of the housing 10 is omitted to facilitate understanding of the main structure. In the semiconductor relay 39, the surface 2a of the light-emitting element 2, which emits light by setting the anode electrode 2c, faces the X direction, while the surface 5a of the light-receiving drive element 5, which receives light, faces the Z direction, which is perpendicular to the X direction. Thus, the surface 2a of the light-emitting element 2 and the surface 5a of the light-receiving drive element 5 are perpendicular, and the light emitted from the surface 2a of the light-emitting element 2 is guided by the light-transmitting resin 10b and received by the surface 5a of the light-receiving drive element 5. Furthermore, the output terminals 8 and 9 and the MOSFET elements 3 and 4 have elongated shapes extending along the X direction. According to this structure, in this embodiment, the same effects as those achieved by the structure shown in Embodiment 1 can be achieved. That is, the parasitic inductance component can be reduced, resulting in a reduction in insertion loss. In addition, by reducing the inductance along the signal path, the characteristic impedance mismatch of the signal path can be reduced. As a result, the reflection characteristics within the signal path can be improved, thereby reducing insertion loss. Furthermore, it can suppress the degradation of the high-frequency characteristics of the transmitted signal and reduce impedance mismatch in the signal transmission path. Additionally, it can shorten the wire 11 connecting the source electrode of the light-receiving drive element 5 and the first source electrode of the first MOSFET element 3; that is, it can shorten the length of the component that functions as a stub. This reduces the characteristic impedance of the signal path, thereby improving the signal reflection characteristics within the signal path and reducing insertion loss. Furthermore, by reducing the inductive component of the output terminals 8 and 9, and the capacitive component caused by the relative positions of the input terminals 6 and 7 and the output terminals 8 and 9, insertion loss can be further reduced. Moreover, with this structure, the wire 11 connecting the source electrodes of the light-receiving drive element 5 and the MOSFET element 4 can be shortened, shifting the resonant frequency generated by the stub towards a higher frequency.

[0229] Furthermore, in view of embodiments 1 to 3, the first electrode body 3e1 of the first MOSFET element 3 and the second electrode body 4e1 of the second MOSFET element 4 each have a portion that overlaps with the light-receiving driving element 5 when viewed along the normal direction of the surface 5a of the light-receiving driving element 5.

[0230] (Implementation Method 4)

[0231] Figure 31 This is a perspective view of the semiconductor relay 30a according to embodiment 4. Figure 31 In the middle, to and Figures 1 to 30 The same parts of the semiconductor relays in embodiments 1 to 3 shown are labeled with the same reference numerals.

[0232] The semiconductor relay 30a includes: a first input terminal 6; a second input terminal 7; a light-emitting element 2 electrically connected to the first input terminal 6 and the second input terminal 7, having a light-emitting surface 2a; a light-receiving driving element 5 having a surface 5a for receiving light emitted from the surface 2a of the light-emitting element 2, and a back surface 5b opposite to the surface 5a; a first MOSFET element 3 having a first surface 3a with a first gate electrode 3d electrically connected to the light-receiving driving element 5; a second MOSFET element 4 having a second surface 4a with a second gate electrode 4d electrically connected to the light-receiving driving element 5; a first output terminal 8 electrically connected to the first MOSFET element 3; and a second output terminal 9 electrically connected to the second MOSFET element 4. The light-receiving driving element 5 overlaps with the first MOSFET element 3 when viewed from above. The light-receiving driving element 5 overlaps with the second MOSFET element 4 when viewed from above. The normal N2a of the surface 2a of the light-emitting element 2 intersects the normal N5a of the surface 5a of the light-receiving driving element 5. The normal N2a of the surface 2a of the light-emitting element 2 and the normal N5a of the surface 5a of the light-receiving driving element 5 are not parallel, but are perpendicular in the embodiment.

[0233] No connecting conductor is provided on the back side 5b of the light-receiving driving element 5. Specifically, in the semiconductor relay 30a, the first amplification electrode 3e2 of the first source electrode 3e and the second amplification electrode 4e2 of the second source electrode 4e are connected together by a third connector 11a, which is a single wire.

[0234] The surface 5a of the light-driven element 5 is parallel to the lower surface 10L of the housing 10.

[0235] Figure 32 This is a perspective view of another semiconductor relay 30b in Embodiment 4. Figure 32 In Figure 31 In the middle, to and Figures 1 to 31 The same parts of the semiconductor relays shown are labeled with the same reference numerals.

[0236] A connecting conductor 12 is provided on the back side 5b of the light-receiving driving element 5. Specifically, in the semiconductor relay 30b, the first amplification electrode portion 3e2 of the first source electrode 3e and the second amplification electrode portion 4e2 of the second source electrode 4e are connected together by the connecting conductor 12.

[0237] The surface 2a of the light-emitting element 2 is parallel to the lower surface 10L of the housing 10.

[0238] Figure 33 This is a perspective view of another semiconductor relay 30c according to embodiment 4. Figure 33 In the middle, to and Figure 32The same parts of the semiconductor relays shown are labeled with the same reference numerals.

[0239] No connecting conductor is provided on the back side 5b of the light-receiving driving element 5. Specifically, in the semiconductor relay 30c, the first amplification electrode 3e2 of the first source electrode 3e and the second amplification electrode 4e2 of the second source electrode 4e are connected together by a third connector 11a, which is a single wire.

[0240] The surface 5a of the light-driven element 5 is parallel to the lower surface 10L of the housing 10.

[0241] According to the above structure, in the semiconductor relays 30a to 30c of Embodiment 4, capacitive coupling between the input and output sides can be reduced, and insertion loss can be reduced. Furthermore, compared to the semiconductor relays of Embodiment 2, the input terminals 6 and 7 can be shortened in the semiconductor relays 30a to 30c, further suppressing ripple on the input side.

[0242] As described above, a semiconductor relay 1 according to one aspect of this disclosure includes: a first input terminal 6; a second input terminal 7; a light-emitting element 2 electrically connected to the first input terminal 6 and the second input terminal 7; a light-receiving driving element 5 having a light-receiving element 51 that receives light output from the light-emitting element 2 and outputs a driving signal according to the received light; a first output terminal 8; a second output terminal 9; a first MOSFET element 3 having a first gate electrode 3d, a first source electrode 3e electrically connected to the light-receiving driving element, and a first drain electrode 3f electrically connected to the first output terminal 8, and inputting the driving signal to the first gate electrode 3d; a second MOSFET element 4 having a second gate electrode 4d, a second source electrode 4e electrically connected to the light-receiving driving element, and a second drain electrode 4f electrically connected to the second output terminal 9, and inputting the driving signal to the second gate electrode 4d; and a connecting conductor 12 electrically connected to the first source electrode 3e and the second source electrode 4e. The first MOSFET element 3 has a first surface 3a and a first back surface 3b opposite to the first surface 3a. The first surface 3a has the first gate electrode 3d and the first source electrode 3e. The second MOSFET element 4 has a second surface 4a and a second back surface 4b opposite to the second surface 4a. The second surface 4a has the second gate electrode 4d and the second source electrode 4e. The first surface 3a of the first MOSFET element 3 has a first mounting portion 3a1 and a first non-mounted portion 3a2. The first mounting portion 3a1 has the first source electrode 3e and the light-receiving driving element 5 mounted thereon. The first non-mounted portion 3a2 has the first gate electrode 3d and does not have the light-receiving driving element 5 mounted thereon. The second surface 4a of the second MOSFET element 4 has a second mounting portion 4a1 and a second non-mounted portion 4a2. The second mounting portion 4a1 has the second source electrode 4e and the light-receiving driving element 5 mounted thereon. The second non-mounted portion 4a2 has the second gate electrode 4d and does not have the light-receiving driving element 5 mounted thereon. The first MOSFET element 3 and the second MOSFET element 4 are located in a first direction (X direction) relative to the light-receiving driving element 5, with their back surface 5b facing the light-receiving driving element 5. The first MOSFET element 3 is located in a second direction (Y direction) perpendicular to the first direction (X direction) relative to the second MOSFET element 4.The connecting conductor 12 has: a first connecting conductor portion 12a that overlaps with the first MOSFET element 3 when viewed along the first direction (X direction); a second connecting conductor portion 12b that overlaps with the second MOSFET element 4 when viewed along the first direction (X direction); and a third connecting conductor portion 12c that electrically connects the first connecting conductor portion 12a to the second connecting conductor portion 12b, and does not overlap with the first MOSFET element 3 and the second MOSFET element 4 when viewed along the first direction (X direction). The connecting conductor 12 is disposed on the back surface 5b of the light-receiving driving element 5.

[0243] The connecting conductor 12 may also be disposed throughout the entire back surface 5b of the light-receiving driving element 5.

[0244] The light-receiving driving element 5 may also have an insulating adhesive sheet 55, which is disposed on the back surface 5b of the light-receiving driving element 5 to bond the connecting conductor 12 to the back surface 5b of the light-receiving driving element 5.

[0245] The semiconductor relay may also include: a first connector 13 disposed on the surface of the first source electrode 3e; and a second connector 14 disposed on the surface of the second source electrode 4e. In this case, the first connector 13 electrically connects the first source electrode 3e to the first connecting conductor portion 12a of the connecting conductor 12. The second connector 14 electrically connects the second source electrode 4e to the second connecting conductor portion 12b of the connecting conductor 12.

[0246] The first connector 13 and the second connector 14 may also be arranged along the second direction (Y direction). In this case, the width of the connecting conductor 12 in the second direction (Y direction) is greater than the interval between the first connector 13 and the second connector 14 in the second direction (Y direction).

[0247] Alternatively, a first MOSFET functional unit (first unit region 3c) may be formed on the first MOSFET element 3. A second MOSFET functional unit may also be formed on the second MOSFET element 4. In the above cases, the first connector 13 does not overlap with the first MOSFET functional unit (first unit region 3c) when viewed along the first direction (X direction). The second connector 14 does not overlap with the second MOSFET functional unit (second unit region 4c) when viewed along the first direction (X direction).

[0248] Alternatively, the semiconductor relay may also include a third connector 11a, which is connected to the first source electrode 3e and the second source electrode 4e and does not overlap with the light-receiving driving element 5 and the connecting conductor 12 when viewed along the first direction (X direction).

[0249] The semiconductor relay may also include a housing 10 that houses the first input terminal 6, the second input terminal 7, the light-emitting element 2, the light-receiving driving element 5, the first output terminal 8, the second output terminal 9, the first MOSFET element 3, the second MOSFET element 4, and the connecting conductor 12. In this case, the first direction (X direction), the second direction (Y direction), and the vertical direction (Z direction) are perpendicular to each other. The first input terminal 6 has a first input-side external terminal portion 61 exposed to the outside of the housing 10 along the lower surface of the housing 10. The second input terminal 7 has a second input-side external terminal portion 71 exposed to the outside of the housing 10 along the lower surface of the housing 10. The first output terminal 8 has a first output-side external terminal portion 81 and a first MOSFET mounting portion 82. The first output-side external terminal portion 81 is exposed to the outside of the housing 10 along the lower surface of the housing 10, and the first MOSFET mounting portion 82 houses the first MOSFET element 3. The second output terminal 9 has a second output-side external terminal portion 91 and a second MOSFET mounting portion 92. The second output-side external terminal portion 91 is exposed to the outside of the housing 10 along the lower surface of the housing 10, and the second MOSFET mounting portion 92 houses the second MOSFET element 4. The first input-side external terminal portion 61, the second input-side external terminal portion 71, the first output-side external terminal portion 81, and the second output-side external terminal portion 91 are located below the light-receiving driving element 5.

[0250] The first mounting portion 3a1 of the first surface 3a of the first MOSFET element 3 may also be located above the first gate electrode 3d. In addition, the second mounting portion 4a1 of the second surface 4a of the second MOSFET element 4 may also be located above the second gate electrode 4d.

[0251] The first mounting portion 3a1 of the first surface 3a of the first MOSFET element 3 may also be located below the first gate electrode 3d. The second mounting portion 4a1 of the second surface 4a of the second MOSFET element 4 may also be located below the second gate electrode 4d.

[0252] The second input terminal 7 may also include a light-emitting element mounting portion 72 and a branch portion 73. The light-emitting element mounting portion 72 holds the light-emitting element 2, and the branch portion 73 is exposed to the outside from the housing 10 and is located above the external terminal portion 71 on the second input side. In this case, the branch portion 73 is exposed from the housing 10 in a direction different from the first direction (X direction).

[0253] The light-emitting element 2 and the light-receiving driving element 5 can also be positioned opposite each other with an open gap along the first direction (X direction). In this case, the light-receiving driving element 5 is disposed between the light-emitting element 2 and the first MOSFET element 3, and between the light-emitting element and the second MOSFET element.

[0254] Industrial availability

[0255] The semiconductor relay disclosed herein can be miniaturized and has reduced insertion loss, thus it is useful as a component for passing and cutting off high-frequency signals.

[0256] Explanation of reference numerals in the attached figures

[0257] 1, 20, 30-33, Semiconductor relay; 2, Light-emitting element; 3, First MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) element; 3a, First surface; 3a1, First mounting portion; 3a2, First non-mounted portion; 3b, First back surface; 3c, First cell region; 3d, First gate electrode; 3e, First source electrode; 3e1, First electrode body portion; 3e2, First amplification electrode portion; 3f, First drain electrode; 4, Second MOSFET element; 4a, Second surface; 4a1, Second mounting portion; 4a2, Second non-mounted portion; 4b, Second back surface; 4c, Second cell region; 4d, Second gate electrode. Electrode; 4e, Second source electrode; 4e1, Second electrode body; 4e2, Second amplifying electrode; 4f, Second drain electrode; 5, Light-receiving driving element; 5a, Surface; 5b, Back side; 51, Light-receiving element; 52, Driving circuit; 6, First input terminal; 61, First input side external terminal (exposed part); 62, Wire connection part; 63, Branch part (exposed part); 7, Second input terminal; 71, Second input side external terminal (exposed part); 72, Light-emitting element mounting part; 73, Branch part (exposed part) 73a-73c, Branch (exposed portion); 8, First output terminal; 81, First output side external terminal (exposed portion); 82, First MOSFET mounting portion; 83, Branch (exposed portion); 9, Second output terminal; 91, Second output side external terminal (exposed portion); 92, Second MOSFET mounting portion; 93, Branch (exposed portion); 10, Housing; 10a, Light-shielding resin; 10b, Light-transmitting resin; 11, Wire; 11a, Wire (Third connector); 12, Connecting conductor; 12a, First connecting conductor portion; 12b, Second connecting conductor portion; 12c, Third connecting conductor portion; 13, First connector; 14, Second connector; 15, Third connector; 16, Third component mounting portion; 17, Covering layer; 40, Circuit board; 40a, Dielectric board (dielectric layer); 41, First wiring (wiring layer); 42, Second wiring (wiring layer); 43, Third wiring (grounding layer); 44, Conductive via; 45, Ground plane (grounding layer); 100, Electrical component unit; 200, Nozzle.

Claims

1. A semiconductor relay, wherein, This semiconductor relay has the following features: Input terminal 1; Second input terminal; A light-emitting element, which is electrically connected to the first input terminal and the second input terminal; A light-receiving driving element has a light-receiving element that receives light output from the light-emitting element, and outputs a driving signal based on the received light; First output terminal; Second output terminal; The first MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) element has a first gate electrode, a first source electrode electrically connected to the light-receiving driving element, and a first drain electrode electrically connected to the first output terminal, and inputs the driving signal to the first gate electrode; The second MOSFET element has a second gate electrode, a second source electrode electrically connected to the light-receiving driving element, and a second drain electrode electrically connected to the second output terminal, and inputs the driving signal to the second gate electrode; as well as A connecting conductor is electrically connected to the first source electrode and the second source electrode. The first MOSFET element has a first surface and a first back surface opposite to the first surface, wherein the first surface is provided with the first gate electrode and the first source electrode. The second MOSFET element has a second surface and a second back surface opposite to the second surface, the second surface having the second gate electrode and the second source electrode disposed thereon. The first surface of the first MOSFET element has: A first mounting portion, which includes the first source electrode and mounts the light-receiving driving element; and The first non-mounted portion has the first gate electrode provided, but does not have the light-receiving driving element mounted thereon. The second surface of the second MOSFET element has: The second mounting portion includes the second source electrode and the light-receiving driving element; and The second non-mounted portion has the second gate electrode provided, but does not have the light-receiving driving element mounted thereon. The first MOSFET element and the second MOSFET element are located in the first direction relative to the light-receiving driving element in a manner that the back side of the light-receiving driving element is opposite to the light-receiving driving element. The first MOSFET element is located relative to the second MOSFET element in a second direction that is perpendicular to the first direction. The connecting conductor has: The first connecting conductor portion overlaps with the first MOSFET element when viewed along the first direction; The second connecting conductor portion overlaps with the second MOSFET element when viewed along the first direction; as well as The third connecting conductor portion electrically connects the first connecting conductor portion to the second connecting conductor portion, and does not overlap the first MOSFET element and the second MOSFET element when viewed along the first direction. The connecting conductor is located on the back side of the light-receiving driving element.

2. The semiconductor relay according to claim 1, wherein, The connecting conductor is disposed across the entire back side of the light-receiving driving element.

3. The semiconductor relay according to claim 1 or 2, wherein, The light-receiving driving element has an insulating adhesive sheet disposed on the back side of the light-receiving driving element, which adheres the connecting conductor to the back side of the light-receiving driving element.

4. The semiconductor relay according to any one of claims 1 to 3, wherein, The semiconductor relay also features: A first connector is disposed on the surface of the first source electrode; and The second connector is disposed on the surface of the second source electrode. The first connector electrically connects the first source electrode and the first connecting conductor portion of the connecting conductor. The second connector electrically connects the second source electrode and the second connecting conductor portion of the connecting conductor.

5. The semiconductor relay according to claim 4, wherein, The first connector and the second connector are arranged along the second direction. The width of the connecting conductor in the second direction is greater than or equal to the distance between the first connector and the second connector in the second direction.

6. The semiconductor relay according to claim 4, wherein, The first MOSFET element forms the first MOSFET functional unit. The second MOSFET element forms a second MOSFET functional unit. The first connector does not overlap with the first MOSFET functional unit when viewed along the first direction. The second connector does not overlap with the second MOSFET functional unit when viewed along the first direction.

7. The semiconductor relay according to any one of claims 1 to 6, wherein, The semiconductor relay also includes a third connector connected to the first source electrode and the second source electrode, which does not overlap with the light-receiving driving element and the connecting conductor when viewed along the first direction.

8. The semiconductor relay according to any one of claims 1 to 7, wherein, The semiconductor relay also includes a housing that houses the first input terminal, the second input terminal, the light-emitting element, the light-receiving driving element, the first output terminal, the second output terminal, the first MOSFET element, the second MOSFET element, and the connecting conductor. The first direction, the second direction, and the up-down direction are perpendicular to each other. The first input terminal has a first input-side external terminal portion that exposes to the outside of the housing along the lower surface of the housing. The second input terminal has a second input-side external terminal portion that is exposed to the outside of the housing along the lower surface of the housing. The first output terminal has a first output-side external terminal portion and a first MOSFET mounting portion. The first output-side external terminal portion is exposed to the outside of the housing along the lower surface of the housing, and the first MOSFET mounting portion carries the first MOSFET element. The second output terminal has a second output-side external terminal portion and a second MOSFET mounting portion. The second output-side external terminal portion is exposed to the outside of the housing along the lower surface of the housing, and the second MOSFET mounting portion carries the second MOSFET element. The first input-side external terminal, the second input-side external terminal, the first output-side external terminal, and the second output-side external terminal are located below the light-receiving driving element.

9. The semiconductor relay according to claim 8, wherein, The first mounting portion on the first surface of the first MOSFET element is located above the first gate electrode. The second mounting portion of the second surface of the second MOSFET element is located above the second gate electrode.

10. The semiconductor relay according to claim 8 or 9, wherein, The first mounting portion on the first surface of the first MOSFET element is located below the first gate electrode. The second mounting portion of the second surface of the second MOSFET element is located below the second gate electrode.

11. The semiconductor relay according to any one of claims 8 to 10, wherein, The second input terminal also has: A light-emitting element mounting portion, which holds the light-emitting element; and The branch portion, which exposes to the outside from the housing, is located above the external terminal portion of the second input side. The branch is exposed from the housing in a direction different from the first direction.

12. The semiconductor relay according to any one of claims 1 to 11, wherein, The light-emitting element and the light-receiving driving element are spaced apart from each other along the first direction. The light-receiving driving element is disposed between the light-emitting element and the first MOSFET element, and between the light-emitting element and the second MOSFET element.

13. An electrical component unit, wherein, This electrical component unit includes: The semiconductor relay according to any one of claims 1 to 12; and The circuit board, on which the semiconductor relay is mounted, The circuit board has a dielectric layer, a wiring layer formed on the dielectric layer, and a ground layer formed on the dielectric layer. The wiring layer has: Two first wirings, which are respectively connected to the first input terminal and the second input terminal; and Two second wirings are connected to the first output terminal and the second output terminal, respectively.

Images