Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber providing a processing space; a cover member covering an upper portion of the chamber; a substrate supporting unit that supports at least one substrate and is rotatable about a rotation axis so that the substrate passes through the imaging region; a gas injection unit configured to inject a process gas toward the substrate supporting unit; a region photographing unit that photographs an image of the imaging region to obtain a thermal image of the imaging region; and a calculation unit that calculates temperature data of the substrate from the thermal image.

Description

[0001] This application is a divisional application of the application for invention patent with application number 202080078329.3, application date 2020-11-02, and title “Substrate processing apparatus”. TECHNICAL FIELD

[0002] The present application relates to a substrate processing apparatus for performing a processing process such as a deposition process and an etching process on a substrate. BACKGROUND

[0003] Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display, or the like, a thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate. For this, a processing process needs to be performed on the substrate, which includes, for example, a deposition process of depositing a thin film including a specific material on the substrate, a light process of selectively exposing a part of the thin film by using a photosensitive material, an etching process of removing the selectively exposed part of the thin film to form a pattern, and the like. Such a processing process is performed on the substrate by a substrate processing apparatus.

[0004] A substrate processing apparatus of the prior art includes a substrate support unit supporting a substrate and a gas injection unit injecting a processing gas toward the substrate support unit. The substrate support unit rotates around a rotation axis. As the substrate support unit rotates around the rotation axis, the substrate supported by the substrate support unit passes through a region below the gas injection unit. In this process, a processing process is performed on the substrate by using the processing gas injected by the gas injection unit.

[0005] In such a processing process, a substrate temperature plays an important factor. In the prior art, in order to reflect the substrate temperature in the processing process, a temperature distribution of the substrate is obtained by using a thermocouple (TC) wafer before the processing process is performed.

[0006] The substrate processing apparatus of the prior art cannot obtain the temperature distribution of the substrate during the processing process, and thus performs the processing process using the predicted temperature distribution of the substrate obtained before the processing process is performed. However, since many variables occur during the processing process, there is inevitably a considerable difference between the predicted temperature distribution of the substrate and the actual temperature distribution of the substrate when the processing process is performed. Due to such a difference, the substrate processing apparatus of the prior art has difficulty in ensuring the quality uniformity of the substrate on which the processing process is completed. SUMMARY

[0007] TECHNICAL PROBLEM

[0008] The present application can be used to solve the above problems, and the present application provides a substrate processing apparatus for improving the quality uniformity of a substrate on which a processing process is completed.

[0009] Technical Solution

[0010] To achieve the above object, the present application can include the following elements.

[0011] The substrate processing apparatus according to the present application can include a chamber providing a processing space; a cover covering an upper portion of the chamber; a substrate support unit supporting at least one substrate and rotating about a rotation axis to pass the substrate through a photographing region; a gas injection unit injecting a processing gas toward the substrate support unit; a region photographing unit photographing the photographing region to obtain a thermal image of the photographing region; and a calculation unit calculating temperature data of the substrate from the thermal image.

[0012] Advantageous Effects

[0013] According to the present application, the following effects can be obtained.

[0014] The present application is implemented to calculate temperature data when performing a processing process on a substrate. Therefore, the quality uniformity of the substrate on which the processing process is completed can be improved.

[0015] The present application is implemented to calculate temperature data of a substrate by photographing a region using a region photographing unit. Therefore, the present application can improve the easiness of an alignment operation of the region photographing unit, and can shorten the time taken to perform the alignment operation of the region photographing unit. Therefore, the present application can increase the operation rate to improve the productivity of the substrate on which the processing process is completed. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 1 is a side cross-sectional view schematically showing a substrate processing apparatus according to the present application.

[0017] Figure 2 and Figure 3 FIG. 2 is a plan view schematically showing an embodiment of a gas injection unit in the substrate processing apparatus according to the present application.

[0018] Figure 4 FIG. 3 is a plan conceptual view showing an operation of obtaining a thermal image in the substrate processing apparatus according to the present application.

[0019] Figure 5 FIG. 4 is a block view schematically showing a substrate processing apparatus according to the present application.

[0020] Figure 6 FIG. 5 is a plan conceptual view showing a thermal image displayed by a first measurement line and a second measurement line in the substrate processing apparatus according to the present application.

[0021] Figure 7is a graph showing first candidate data of a point-based temperature of the substrate corresponding to the first measurement line, and second candidate data of a point-based temperature of the substrate corresponding to the second measurement line. DETAILED DESCRIPTION

[0022] Hereinafter, an embodiment of the substrate processing apparatus according to the present application will be described in detail with reference to the accompanying drawings.

[0023] Referring to Figure 1 The substrate processing apparatus 1 according to the present application performs a processing process on a substrate 100. The substrate 100 can be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present application can perform a processing process such as a deposition process of depositing a thin film on the substrate 100, an etching process of removing a part of the thin film deposited on the substrate 100. Hereinafter, although an embodiment in which the substrate processing apparatus 1 according to the present application performs the deposition process will be described, an embodiment in which another processing process such as the etching process is performed by the substrate processing apparatus 1 according to the present application can also be implemented for those skilled in the art.

[0024] The substrate processing apparatus 1 according to the present application can include a substrate support unit 2, a cover 3, a gas injection unit 4, a region photographing unit 5, and a calculation unit 6.

[0025] Referring to Figure 1 The substrate support unit 2 supports the substrate 100. The substrate support unit 2 can be coupled to the inside of a chamber 1a having a processing space in which the processing process is performed. The processing space can be located between the substrate support unit 2 and the aforementioned cover 3. A substrate entrance (not shown) can be coupled to the chamber 1a. By using a loading apparatus (not shown), the substrate 100 can pass through the substrate entrance and can be loaded into the chamber 1a. When the processing process has been completed, the substrate 100 can be unloaded to the outside of the chamber 1a by passing through the substrate entrance by means of an unloading apparatus (not shown). An exhaust member 1b to exhaust a gas in the processing space to the outside can be coupled to the chamber 1a.

[0026] The substrate support unit 2 can be rotated about a rotation axis 2a. When the substrate support unit 2 is rotated about the rotation axis 2a, the substrate 100 supported by the substrate support unit 2 passes through a region below the gas injection unit 4 while being rotated about the rotation axis 2a. In this process, the processing process can be performed on the substrate 100 by a processing gas injected by the gas injection unit 4. The substrate support unit 2 can support at least one substrate 100. When the substrate support unit 2 supports a plurality of substrates 100, the substrates 100 can be disposed to be spaced apart from each other with respect to the rotation axis 2a. A rotation device (not shown) to provide a rotation force can be coupled to the substrate support unit 2.

[0027] Referring to The cover 3 covers an upper portion of the chamber 1a. The cover 3 can be spaced apart above the substrate support unit 2. In Figure 2 and Figure 3 , the cover 3 is a hexagonal structure, but is not limited thereto, and can be a cylindrical structure, an elliptical structure, or a polygonal structure such as an octagonal structure. The chamber 1a can correspond to the shape of the cover 3.

[0028] Referring to The gas injection unit 4 injects a process gas toward the substrate support unit 2. The gas injection unit 4 can be coupled to the cover 3. Although not shown, the gas injection unit 4 can be coupled to the chamber 1a so that the gas injection unit 4 is disposed between the cover 3 and the substrate support unit 2.

[0029] The gas injection unit 4 can include a first gas injection module 41 that injects a first gas and a second gas injection module 42 that injects a second gas. The first gas can be a raw material gas, and the second gas can be a reaction gas. The first gas injection module 41 and the second gas injection module 42 can be spaced apart from each other with respect to the rotation axis 2a. Thus, when the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 sequentially passes through a region below the first gas injection module 41 and a region below the second gas injection module 42 while rotating about the rotation axis 2a. Thus, a process can be performed on the substrate 100 by using the first gas and the second gas. The gas injection unit 4 can include a plurality of first gas injection modules 41. The gas injection unit 4 can include a plurality of second gas injection modules 42.

[0030] The gas injection unit 4 can include a purge gas injection module 43 to inject a purge gas. The purge gas injection module 43 can inject a purge gas, and thus can divide a first region into which the first gas is injected and a second region into which the second gas is injected. Thus, the purge gas injection module 43 can prevent the first gas and the second gas from being mixed with each other between the first region and the second region. When the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 passes through a region below the purge gas injection module 43 while rotating about the rotation axis 2a. In this process, a residual gas remaining on the substrate 100 can be purged by the purge gas. As Figure 2 shown, the purge gas injection module 43 can be a dumbbell shape that passes through a region between the first gas injection module 41 and the second gas injection module 42. As Figure 3 shown, the purge gas injection module 43 can be a Y shape. Although not shown, the purge gas injection module 43 can be implemented in various other shapes based on the number of the first gas injection modules 41 and the number of the second gas injection modules 42. The gas injection unit 4 can include a plurality of purge gas injection modules 43.

[0031] Referring to The area imaging unit 5 captures the imaging area 200 to obtain a thermal image of the imaging area 200. The thermal image is an area image of the imaging area and contains temperature information. The area imaging unit 5 can be a camera that uses infrared rays (IR) to obtain the thermal image of the imaging area 200. The substrate support unit 2 can rotate around the rotation axis 2a to pass the substrate 100 through the imaging area 200. Therefore, the substrate processing apparatus 1 according to the present application can perform a processing process while obtaining the temperature distribution of the substrate 100, and thus can change the processing conditions based on the temperature distribution of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present application can improve the quality uniformity of the substrate that has completed the processing process. Moreover, the substrate processing apparatus 1 according to the present application can obtain the temperature distribution of the substrate 100 by capturing an area using the area imaging unit 5, and thus has the following advantages compared to a comparative example that obtains the temperature distribution of the substrate 100 by using a line scanner.

[0032] First, in the comparative example that obtains the temperature distribution of the substrate 100 by using a line scanner, the position of the line scanner should be precisely aligned to the position of the substrate 100. Therefore, in the comparative example, the line scanner is difficult to perform an alignment operation in an initial setting stage, and it is quite time-consuming to perform the alignment operation on the line scanner, thereby having the disadvantage of delaying the initial setting time. Such a disadvantage will adversely affect the process of re-installing the line scanner after maintenance and repair.

[0033] In this embodiment, the allowable error range of the alignment operation of the position of the area imaging unit 5 relative to the substrate 100 can be greater than that of the comparative example, by capturing an area using the area imaging unit 5 to obtain the temperature distribution of the substrate 100. This is because the area imaging unit 5 captures an area to obtain a thermal image, and the error range can be compensated by correction within the thermal image. Therefore, compared to the comparative example, the substrate processing apparatus 1 according to the present application can shorten the time to perform the alignment operation of the area imaging unit 5, and thus has the advantages of shortening the initial setting time and the re-installation time, etc. Therefore, the substrate processing apparatus 1 according to the present application can increase the operation efficiency, thereby improving the productivity of the substrate that has completed the processing process.

[0034] Second, in the comparative example that obtains the temperature distribution of the substrate 100 by using a line scanner, the temperature distribution of the substrate 100 is obtained by continuously performing point measurements to measure a line. However, because the point measurements are performed in the state that the substrate is rotating, the comparative example will have a measurement time difference between a first measurement point and a second measurement point. Therefore, the accuracy of the temperature distribution of the substrate 100 is decreased in the comparative example.

[0035] In the embodiment in which the temperature distribution of the substrate 100 is obtained by capturing an area using the area imaging unit 5, the temperature distribution of the substrate 100 can be obtained by capturing a thermal image instantaneously while the substrate is rotating. Therefore, in the thermal image obtained by the instantaneous capturing by the area imaging unit 5, there is no difference in measurement time between the measurement points. Therefore, compared to the comparative example, the embodiment can improve the accuracy of the temperature distribution of the substrate 100.

[0036] Third, in the comparative example in which the temperature distribution of the substrate 100 is obtained by using a line scanner, although the point measurement is continuously performed, different error values occur at each measurement point at each time of performing the measurement point due to the peak-to-peak period. Therefore, in the comparative example, the accuracy of the temperature distribution of the substrate 100 decreases.

[0037] In the embodiment in which the temperature distribution of the substrate 100 is obtained by capturing an area using the area imaging unit 5, since the thermal image is obtained by the instantaneous capturing, even if error values occur in the thermal image, the same error values occur in all the measurement points. Therefore, compared to the comparative example, the embodiment can improve the accuracy of the temperature distribution of the substrate 100.

[0038] The imaging area 200 can be formed to have a first length 210L which is smaller than the diameter of the substrate 100 with respect to the direction in which the substrate 100 rotates around the rotation axis 2a. A second length 220L of the imaging area 200 which is perpendicular to the first length 210L can be larger than the diameter of the substrate 100. Therefore, the area imaging unit 5 can obtain a thermal image including a portion of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present application can obtain a plurality of thermal images to obtain the overall temperature distribution of the substrate 100. In this embodiment, the imaging area 200 is shown to be formed in a rectangular shape, but is not limited thereto, and the imaging area 200 can be other shapes such as an elliptical shape. Figure 4

[0039] The area imaging unit 5 can be provided outside the processing space. In this case, the area imaging unit 5 can obtain a thermal image including the processing space through the measurement hole 300 located in the imaging area 200. Therefore, the area imaging unit 5 can obtain a thermal image of the substrate 100 including an area which passes below the measurement hole 300.

[0040] ​The measurement hole 300 can be formed in the gas jetting unit 4. In this case, the area imaging unit 5 can be disposed above the gas jetting unit 4 at a position corresponding to the measurement hole 300. The measurement hole 300 can be formed in the purge gas jetting module 43 in the gas jetting unit 4. The measurement hole 300 can be formed to pass through the purge gas jetting module 43. In this case, the measurement hole 300 can be spaced apart from a purge hole (not shown) in the purge gas jetting module 43 to jet the purge gas.

[0041] The measurement hole 300 can be formed in the cover member 3. In this case, the area imaging unit 5 can be disposed above the cover member 3 at a position corresponding to the measurement hole 300. The measurement hole 300 can be formed to pass through the cover member 3. In this case, the measurement hole 300 can be formed at a portion of the cover member 3 where the gas jetting unit 4 is not disposed.

[0042] The measurement hole 300 can be formed to have a size smaller than the imaging area 200. Referring to Figure 4 , the length of the measurement hole 300 in the longitudinal direction can be formed to be smaller than the diameter of the substrate 100, and the length in the width direction can be formed to be larger than the diameter of the substrate 100. In this case, when the center of the substrate 100 is disposed with respect to a circular rotation path rotating about the rotation axis 2a, the longitudinal direction can correspond to the tangential direction of the circular rotation path. The width direction is a direction perpendicular to the longitudinal direction. In this case, the measurement hole 300 is shown to be formed in a rectangular shape, but is not limited thereto, and the measurement hole 300 can also be formed in other shapes such as an elliptical shape. Figure 4

[0043] Referring to The calculation unit 6 calculates temperature data of the substrate 100 from the thermal image. In the thermal image, the temperature of each point of the substrate can be displayed in a color corresponding to the temperature. The temperature based on the color can be pre-stored in the calculation unit 6 in the form of a look-up table. By matching such stored data with the thermal image, the calculation unit 6 can calculate the temperature data of the point temperature of the substrate.

[0044] The calculation unit 6 can include a retrieving module 61 and a calculation module 62.

[0045] The retrieving module 61 retrieves a segment of candidate data to obtain the temperature data. The retrieving module 61 can retrieve first candidate data (shown in (a) of FIG. 6) corresponding to the point temperature of the substrate for the first measurement line ML1 (shown in Figure 6 ) from the thermal image, and can retrieve second candidate data (shown in (b) of FIG. 6) corresponding to the point temperature of the substrate for the second measurement line ML2 (shown in Figure 7 ) from the thermal image. Figure 6 Figure 7 ​​The first measurement line ML1 and the second measurement line ML2 can be arranged parallel to each other. In the case where the measurement hole 300 is provided, the first measurement line ML1 and the second measurement line ML2 can be arranged in parallel to the width direction of the measurement hole 300. In this case, the first measurement line ML1 and the second measurement line ML2 can be arranged apart from each other in the longitudinal direction of the measurement hole 300. In Figure 7 the graph of the first candidate data of (a) and Figure 7 In each of the graphs of the second candidate data of (b), the horizontal axis of each graph can correspond to the length of the substrate 100 passing through the photographing region 200. As described above, each of the first candidate data and the second candidate data can include the point temperature of the substrate 100.

[0046] The extraction module 61 can determine the interval between the first measurement line ML1 and the second measurement line ML2 based on the separation distance between the substrate 100 and the area photographing unit 5. The separation distance between the substrate 100 and the area photographing unit 5 can correspond to the height of the area photographing unit 5 with respect to the substrate 100. For example, the extraction module 61 can determine the interval between the first measurement line ML1 and the second measurement line ML2 as the interval between the pixels of the area photographing unit 5 corresponding to the separation distance between the substrate 100 and the area photographing unit 5. Thus, the substrate processing apparatus 1 according to the present disclosure can set the first candidate data based on the first measurement line ML1 and the second candidate data based on the second measurement line ML2 to correspond to the position closest to the substrate 100. Thus, in the case where the point of the temperature abnormality measurement is located in one segment of the candidate data of the first candidate data and the second candidate data, even if the temperature of the corresponding point is corrected with reference to one segment of the other candidate data, the substrate processing apparatus 1 according to the present disclosure can ensure the temperature data sufficient to confirm the temperature distribution of the substrate 100. For example, the extraction module 61 can extract the first candidate data and the second candidate data by using the first measurement line ML1 and the second measurement line ML2 arranged apart from each other by an interval of 0.3 mm. In this case, the separation distance between the substrate 100 and the area photographing unit 5 can be 300 mm, the area photographing unit 5 can obtain a thermal image having a resolution of 640 x 480, and the interval between the pixels of the area photographing unit 5 can be 0.3 mm.

[0047] The extraction module 61 can extract the part of the thermal image other than the part corresponding to the part below the preset temperature as the substrate part SA (e.g., the part corresponding to the part above the preset temperature) as the first candidate data and the second candidate data. Figure 6As shown), first candidate data and second candidate data can be acquired using a first measurement line ML1 and a second measurement line ML2 relative to the captured substrate portion SA. A preset temperature can be preset by the operator. In the case of a measurement hole 300, the portion corresponding to the preset temperature or lower can be a gas injection unit 4 or a cover 3. The corresponding portion may have an excessively low temperature, lower than the temperature of the area of ​​the substrate 100 passing under the measurement hole 300, and therefore the extraction module 61 can acquire the substrate portion SA using the preset temperature. Therefore, the substrate processing apparatus 1 according to the present invention can acquire the position of the substrate 100 from a thermal image, and then acquire the first candidate data and the second candidate data, thereby improving the accuracy of the operation of obtaining the temperature distribution of the substrate 100. Furthermore, the substrate processing apparatus 1 according to the present invention can further increase the allowable error range of the alignment operation of the area imaging unit 5 relative to the substrate 100, thereby shortening the time required for the alignment operation of the area imaging unit 5.

[0048] The calculation module 62 can calculate temperature data of the point temperature of the substrate contained in the thermal image by using the first candidate data and the second candidate data. The first candidate data and the second candidate data are provided by the acquisition module 61 via wired communication, wireless communication or similar means.

[0049] The calculation module 62 can determine the point in a segment of the candidate data of the first candidate data and the second candidate data that exceeds a preset reference temperature ST as the temperature of a segment of other candidate data, thereby calculating temperature data. The reference temperature ST can be considered abnormally high above the noise, and therefore can be preset by the operator. For example, the calculation module 62 can... Figure 7 Temperatures exceeding the reference temperature ST in the first interval T1 of the first candidate data shown in A are excluded, and can be... Figure 7 From the second candidate data shown in B, the point temperature corresponding to the second interval T2 of the first interval is determined as the point temperature of the corresponding interval. Therefore, the substrate processing apparatus 1 according to the present invention can prevent the accuracy of temperature data from being reduced due to noise.

[0050] The calculation module 62 can determine the point in the first candidate data and the second candidate data that is equal to or less than the reference temperature ST as the average temperature of the first candidate data and the second candidate data, thereby calculating the temperature data. For example, the calculation module 62 can determine the point in the first candidate data and the second candidate data that is equal to or less than the reference temperature ST as the average temperature of the first candidate data and the second candidate data. Figure 7 The point temperatures in the first candidate data shown in A, excluding the first interval T1, and in... Figure 7 The average temperature of the points in the interval excluding the second interval T2 in the second candidate data shown in B.

[0051] As described above, the calculation module 62 can determine a point exceeding the reference temperature ST in a piece of candidate data among the first candidate data and the second candidate data as a temperature of a piece of other candidate data, and can determine a point equal to or less than the reference temperature ST in all of the first candidate data and the second candidate data as an average temperature of the temperature of the first candidate data and the temperature of the second candidate data, thereby calculating the temperature data. Thus, the substrate processing apparatus 1 according to the present application can further improve the accuracy of the temperature data. When a point exceeding the reference temperature ST occurs in all of the first candidate data and the second candidate data, the calculation module 62 can send a warning to an operator.

[0052] Referring to The calculation unit 6 can include a generation module 63 and a conversion module 64.

[0053] The generation module 63 generates an elliptical detection image representing a temperature distribution of the substrate 100 by using the plurality of temperature data. As Figure 4 As shown, the substrate 100 passes through the photographing region 200 by rotation, so the area photographing unit 5 obtains thermal images including a portion of the substrate 100, and thus the calculation unit 6 can calculate temperature data of each thermal image by using the extraction module 61 and the calculation module 62. By collecting pieces of temperature data calculated in this manner, the generation module 63 can generate an elliptical detection image. The reason why the elliptical detection image is generated even when the substrate 100 is circular is that, since the thermal images are obtained in a process in which the substrate 100 rotates around the rotation axis 2a, an outer portion of the substrate 100 disposed at a position opposite to the rotation axis 2a moves a greater distance than an inner portion of the substrate 100 disposed near the rotation axis 2a. The pieces of temperature data can be provided from the calculation module 62 to the generation module 63 via wired communication, wireless communication, or the like.

[0054] The generation module 63 can generate an elliptical detection image representing a temperature distribution corresponding to one rotation of the substrate by using a rotation rate of the substrate support unit 2 used to calculate the pieces of temperature data and photographing times of the thermal images. Thus, in a case where a process of supporting a plurality of substrates 100 on the substrate support unit 2 and rotating the substrates 100 360 degrees around the rotation axis 2a a plurality of times to calculate the pieces of temperature data, the generation module 63 can generate an elliptical detection image from pieces of temperature data corresponding to a case where the same substrate 100 is rotated the same number of times.

[0055] The conversion module 64 converts the elliptical detection image into a circular detection image corresponding to the substrate 100. Thus, the operator can confirm the temperature distribution of the substrate 100 by using the temperature distribution displayed in the circular detection image in a temperature color-based distinction. Thus, the substrate processing apparatus 1 according to the present application can provide the circular detection image corresponding to the substrate 100 to the operator, thereby improving the operation easiness of confirming the temperature distribution of the substrate 100. Although not shown, the conversion module 64 can provide the circular detection image to a display apparatus (not shown). The elliptical detection image can be provided from the generation module 63 to the conversion module 64 via wired communication, wireless communication, or the like.

[0056] The conversion module 64 can calculate the coordinates of the points of the substrate 100 by using the rotation rate of the substrate support unit 2 and the distances from the rotation axis 2a of the substrate support unit 2 to the points of the substrate 100, and then can convert the elliptical detection image into the circular detection image based on the calculated coordinates. As the rotation rate of the substrate support unit 2 increases, the substrate support unit 2 moves a greater distance, and at points farther from the rotation axis 2a, the substrate support unit 2 moves a relatively greater distance, the conversion module 64 thereby calculates the coordinates of the points of the substrate 100 by using the rotation rate of the substrate support unit 2 and the distances from the rotation axis 2a of the substrate support unit 2 to the points of the substrate 100. In this case, the coordinates of the points of the substrate 100 can correspond to absolute coordinates with respect to the actual substrate 100. When calculating the coordinates of the points of the substrate 100, the conversion module 64 can move the temperatures of the points of the substrate 100 based on the absolute coordinates to convert the elliptical detection image into the circular detection image.

[0057] Referring to The substrate processing apparatus 1 according to the present application can implement the temperature data calculated by the calculation unit 6 under the process conditions of the processing process. In this case, the substrate processing apparatus 1 according to the present application can include a temperature control unit 7.

[0058] The temperature control unit 7 controls the temperature of the substrate 100 supported on the substrate support unit 2. The temperature control unit 7 can control the temperature of the substrate support unit 2, and thus can control the temperature of the substrate 100 by using the substrate support unit 2. In this case, the temperature control unit 7 can be installed in the substrate support unit 2. Although not shown, the temperature control unit 7 can be implemented to control the temperature of the substrate 100 by using electric power. In this case, the temperature control unit 7 can be an electric heater. Although not shown, the temperature control unit 7 can control the temperature of the substrate 100 by using a temperature control fluid. In this case, the temperature control unit 7 can include a pipe installed in the substrate support unit 2, a pump supplying the temperature control fluid to the pipe, and a control unit controlling the temperature of the temperature control fluid supplied to the pipe by the pump.

[0059] The temperature control unit 7 can control the temperature of the substrate 100 supported by the substrate support unit 2 to a preset processing temperature by using the temperature data calculated by the calculation unit 6. The preset processing temperature can vary based on the kind of the processing process, the kind of the substrate 100, and the kind of the thin film, and can be preset by an operator.

[0060] The gas injection unit 4 can stop the injection of the gas to the substrate support unit 2 until the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature by using the temperature data calculated by the calculation unit 6. When it is confirmed that the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature by using the temperature data calculated by the calculation unit 6, the gas injection unit 4 can start injecting the gas to the substrate support unit 2. Accordingly, the substrate processing apparatus 1 according to the present application can improve the quality uniformity of the substrate on which the processing process is completed.

[0061] The present application as described above is not limited to the above-mentioned embodiments and the accompanying drawings, and those skilled in the art will clearly know that various modifications, changes, and substitutions can be made without departing from the scope and spirit of the present application.

Claims

1. A computing unit for a substrate processing apparatus, the computing unit comprising: The acquisition module is configured to acquire first candidate data and second candidate data of point temperature of the substrate from the thermal image of the substrate obtained by the regional imaging unit at a certain moment, wherein the first candidate data and the second candidate data correspond to a first measurement line and a second measurement line that are parallel to each other in the thermal image, respectively. as well as The calculation module is configured to calculate temperature data of the point temperature of the substrate contained in the thermal image by using the first candidate data and the second candidate data.

2. The computing unit according to claim 1, wherein: When the point temperature of the first segment in the first candidate data exceeds the reference temperature, and the point temperature of the second segment in the second candidate data corresponding to the first segment is equal to or less than the reference temperature, the calculation module determines the point temperature of the second segment as the point temperature of the corresponding segment. as well as When the point temperature of the first segment and the point temperature of the second segment are both equal to or less than the reference temperature, the calculation module determines the average temperature of the point temperature of the first segment and the point temperature of the second segment as the point temperature of the corresponding segment.

3. The computing unit according to claim 1, wherein the capturing module determines the interval between the first measurement line and the second measurement line based on the separation distance between the substrate and the area imaging unit.

4. The computing unit according to claim 1, wherein the capturing module captures the first candidate data and the second candidate data by using the first measurement line and the second measurement line separated from each other by an interval of 0.3 mm.

5. The computing unit according to claim 1, wherein the capturing module captures a portion of the thermal image other than the portion corresponding to a preset temperature or lower, as a substrate portion, and captures the first candidate data and the second candidate data corresponding to the captured substrate portion.

6. The computing unit according to claim 1, further comprising: The generation module generates an elliptical detection image representing the temperature distribution of the substrate by using multiple temperature data. as well as The conversion module converts the elliptical detection image into a circular detection image corresponding to the substrate.

7. The computing unit according to claim 6, wherein: The generation module generates the elliptical detection image representing a temperature distribution corresponding to a rotation of the substrate by using the rotation rate of the substrate support unit used to calculate the temperature data and the imaging time of the thermal image; and The conversion module calculates the coordinates of points on the substrate by using the rotation speed of the substrate support unit and the distance of each point on the substrate from the rotation axis of the substrate support unit. Then, based on the calculated coordinates of the points, the elliptical detection image is converted into the circular detection image.

Images