Flat plate type atomic layer deposition device

Abstract

The invention relates to semiconductor production and manufacturing equipment, and provides a flat plate type atomic layer deposition device. A flow field optimization assembly comprises a flaring block and an exhaust block; the flaring block comprises a flow guide part and a flaring part, and a plurality of air inlet channels are formed in the flaring part at equal intervals; an air inlet sieve plate is arranged between the flaring part and the air inlet end of the reaction outer cavity, and a plurality of first through holes are formed in the air inlet sieve plate at equal intervals; the exhaust block comprises a first exhaust cavity and a second exhaust cavity which are communicated with each other; an exhaust sieve plate is arranged at the communicating position of the first exhaust cavity and the second exhaust cavity, and a plurality of second through holes are formed in the exhaust sieve plate. By applying the technical scheme provided by the invention, the gas-phase precursor enters the reaction inner cavity at a uniform flow rate through the flaring block and the gas inlet sieve plate, and is discharged out of the reaction inner cavity at a uniform flow rate through the exhaust sieve plate, so that the uniformity of a flow field on the upper surface of the wafer in the reaction inner cavity is effectively improved, and the yield of the wafer is improved. And therefore, the deposition uniformity of the gas-phase precursor on the upper surface of the wafer is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to semiconductor manufacturing equipment, in particular to a flat plate type atomic layer deposition device. BACKGROUND

[0002] Atomic layer deposition is a method of forming a thin film by alternately introducing gas phase precursors into a reaction inner cavity and allowing chemical adsorption reaction on the surface of a substrate.

[0003] The existing atomic layer deposition device includes a reaction outer cavity and a reaction inner cavity fixedly arranged in the reaction outer cavity, and a carrier is fixedly arranged in the reaction inner cavity. During transmission, a wafer is transmitted to the carrier by an external mechanical hand. A heater is installed on the top of the inner wall of the reaction outer cavity. An air inlet pipeline is arranged on one side of the reaction outer cavity, and the air inlet pipeline is in communication with one side of the reaction inner cavity. An air outlet pipeline is arranged on the other side of the reaction inner cavity.

[0004] During deposition reaction, the gas phase precursors enter the reaction inner cavity from the air inlet pipeline and are extracted along the air outlet pipeline. Since the uniformity of the flow field of the gas phase precursors cannot be effectively controlled at the air inlet pipeline and the air outlet pipeline, and the diffusion degree of the gas phase precursors after entering the reaction inner cavity is high, the use amount of the gas phase precursors is greatly increased, and the uniformity of the deposition on the upper surface of the wafer cannot be effectively controlled. SUMMARY

[0005] The embodiment of the present application provides a flat plate type atomic layer deposition device to improve the uniformity of the deposition of the gas phase precursors on the upper surface of the wafer.

[0006] The embodiment of the present application provides a flat plate type atomic layer deposition device, which comprises a reaction outer cavity, a reaction inner cavity arranged in the reaction outer cavity, and further comprises a flow field optimization assembly, the flow field optimization assembly comprising an expanding block and an air outlet block.

[0007] The expanding block comprises a flow guide part and an expanding part arranged in sequence along the air inlet direction, and a plurality of air inlet channels are equidistantly arranged on the expanding part. One end of the flow guide part is connected with a plasma generator, the other end is connected with the expanding part, the other end of the expanding part is connected with the air inlet end of the reaction outer cavity, and a plurality of first through holes are equidistantly arranged on the air inlet screen plate arranged between the air inlet end of the reaction outer cavity and the expanding part.

[0008] The air outlet block is connected with the air outlet end of the reaction outer cavity, and the air outlet block is provided with a first air outlet cavity and a second air outlet cavity in communication with each other. The first air outlet cavity is in communication with the air outlet end of the reaction inner cavity. An air outlet screen plate is arranged at the communication position of the first air outlet cavity and the second air outlet cavity, a plurality of second through holes are arranged on the air outlet screen plate, and an air outlet pipe is arranged on the second air outlet cavity.

[0009] In an implementation, the inner portion of the flow guide part is provided with a flow guide channel, the inner portion of the flared part is provided with a flared channel in communication with the air inlet channel, the two ends of the flared channel are inclined and outwardly flared in the air inlet direction, the plasma generator, the flow guide channel, the flared channel, the first through hole and the air inlet end of the reaction outer cavity are sequentially communicated.

[0010] In an implementation, the second exhaust cavity is in a ring layout, and the first exhaust cavity is in the ring layout of the second exhaust cavity.

[0011] The aperture of the second through hole increases in the exhaust direction, and the exhaust direction is the gas flow direction in the second exhaust cavity.

[0012] The exhaust pipe opening is arranged at a position away from the exhaust sieve plate.

[0013] In an implementation, a flow controller is arranged on the air inlet channel to adjust the air inlet flow of the air inlet channel.

[0014] In an implementation, a heating assembly is further included, and the heating assembly includes a first heating wire and a second heating wire.

[0015] The first heating wire is in a serpentine distribution above the outer portion of the reaction inner cavity, and the gap of the first heating wire decreases in the direction from the flared block to the exhaust block; the second heating wire is symmetrically arranged at the two ends of the outer portion of the reaction inner cavity.

[0016] In an implementation, a third heat shield group is arranged between the air inlet end of the reaction outer cavity and the air inlet end of the reaction inner cavity.

[0017] The third heat shield group includes a first heat shield plate and a second heat shield plate arranged in parallel, the first heat shield plate and the second heat shield plate are connected through a first elastic adjusting member, the second heat shield plate extends a first flow guide plate on both sides, the first flow guide plate penetrates the first heat shield plate, and the two ends of the first flow guide plate are in communication with the air inlet end of the reaction outer cavity and the air inlet end of the reaction inner cavity respectively.

[0018] The first elastic adjusting member includes a first adjusting bolt and a first elastic member, the first elastic member is arranged between the first heat shield plate and the second heat shield plate, and the first adjusting bolt penetrates the second heat shield plate, the first elastic member and the first heat shield plate in sequence and is threadedly connected with the inner wall of the reaction outer cavity.

[0019] The side of the second heat shield plate close to the reaction inner cavity is a mirror surface.

[0020] In an implementation, the first heat shield plate extends an arc-shaped limiting plate on the side where the second heat shield plate is located, and the arc-shaped limiting plate has a gap with the second heat shield plate.

[0021] The air inlet end of the reaction outer cavity is provided with a first notch capable of cooperating with the first flow guide plate, and when the arc-shaped limiting plate abuts against the second heat shield plate, the first flow guide plate abuts against the first notch.

[0022] In an implementation manner, a fourth heat shield group is arranged between the gas outlet end of the reaction inner cavity and the exhaust block, and the fourth heat shield group comprises a third heat shield plate and a fourth heat shield plate arranged in parallel;

[0023] The third heat shield plate and the fourth heat shield plate are connected through a second elastic adjusting piece, the fourth heat shield plate extends out a second flow guide plate along a side where the gas outlet end of the reaction inner cavity is located, the second flow guide plate penetrates through the third heat shield plate, and the two ends of the second flow guide plate are respectively communicated with the gas outlet end of the reaction inner cavity and the first exhaust cavity;

[0024] The second elastic adjusting piece comprises a second adjusting bolt and a second elastic piece, the second elastic piece is arranged between the third heat shield plate and the fourth heat shield plate, and the second adjusting bolt is threadedly connected with the inner wall of the exhaust block in sequence through the third heat shield plate, the second elastic piece and the fourth heat shield plate;

[0025] The side of the third heat shield plate close to the reaction inner cavity is a mirror surface.

[0026] In an implementation manner, the gas outlet end of the reaction inner cavity is provided with a third notch capable of cooperating with the second flow guide plate.

[0027] In an implementation manner, a first heat shield group and a second heat shield group are arranged between the heating assembly and the reaction outer cavity and are spliced with each other;

[0028] The first heat shield group comprises a plurality of layers of first horizontal screen portions arranged horizontally, the plurality of layers of first horizontal screen portions are integrally connected through first support columns, the first horizontal screen portion located at the bottom is connected with the outer top of the reaction inner cavity, and the two ends of the plurality of layers of first horizontal screen portions extend out first side screen portions in the vertical direction;

[0029] The second heat shield group comprises a plurality of layers of second horizontal screen portions arranged horizontally, the plurality of layers of second horizontal screen portions are integrally connected through second support columns, the second horizontal screen portion located at the top is connected with the outer bottom of the reaction inner cavity, and the two ends of the plurality of layers of second horizontal screen portions extend out second side screen portions in the vertical direction;

[0030] The first side screen portion and the second side screen portion are arranged oppositely, a first connecting portion is arranged between the ends of the first side screen portion, a second connecting portion is arranged between the ends of the second side screen portion, the first connecting portion and the second connecting portion are arranged in parallel, and are arranged obliquely with respect to the adjacent outer side wall of the reaction inner cavity;

[0031] The side of the first horizontal screen portion located at the bottom close to the reaction inner cavity, the side of the first side screen portion extending out from the first horizontal screen portion located at the bottom close to the reaction inner cavity, the side of the second horizontal screen portion located at the top close to the reaction inner cavity, and the side of the second side screen portion extending out from the second horizontal screen portion located at the top close to the reaction inner cavity are mirror surfaces.

[0032] In an implementation, the flat plate type atomic layer deposition device further comprises a detachable carrier assembly, which comprises a support frame, a heat insulation block, a carrier end cover and a carrier for containing a wafer;

[0033] The support frame extends through the first exhaust cavity and reaches the inside of the reaction inner cavity, the heat insulation block is arranged between the support frame and the carrier end cover, the carrier end cover is provided with an extension shaft, and the extension shaft is in sliding connection with a sliding channel on the reaction outer cavity;

[0034] A support shaft is arranged on the side of the support frame away from the heat insulation block, a rolling bearing is mounted on the support shaft, the rolling bearing abuts against the inner bottom of the reaction inner cavity, the bottom of the support frame is provided with a sliding plate, and the exhaust block is provided with a mounting seat on the side close to the carrier end cover, the mounting seat is mounted with a universal ball in sliding connection with the heat insulation block and the sliding plate;

[0035] A plurality of notched openings in linear distribution are arranged on the support frame, and connecting ribs are arranged between the plurality of notched openings;

[0036] An inclined portion is arranged on the side of the support frame close to the first flow guide plate, the inclined portion is arranged upwardly inclined along the gas flow direction, and a guide surface is connected to the top of the inclined portion;

[0037] A limiting portion is arranged on the end of the support frame away from the inclined portion, the carrier is placed between the inclined portion and the limiting portion, a positioning pin is arranged between the inclined portion and the limiting portion of the support frame, and a positioning pin hole matched with the positioning pin is arranged on the carrier;

[0038] A sealing handle is arranged on the outside of the carrier end cover, and a sealing buckle matched with the sealing handle is arranged on the exhaust block.

[0039] In an implementation, the inner walls of the reaction outer cavity gas inlet end, the first flow guide plate, the reaction inner cavity, the second flow guide plate and the first exhaust cavity corresponding to the connection positions are flush;

[0040] The side of the exhaust screen plate close to the heat insulation block is flush with the inner wall of the first exhaust cavity;

[0041] The guide surface, the upper surface of the carrier, the upper surface of the wafer, the upper surface of the limiting portion and the upper surface of the heat insulation block are flush;

[0042] The bottom of the first flow guide plate is located on the inclined surface of the inclined portion, and the guide surface is located between the upper surface and the lower surface of the inner wall of the first flow guide plate.

[0043] In an implementation, the flat plate type atomic layer deposition device further comprises a gas pressure adjusting pipeline, which is arranged on the outer wall of the reaction outer cavity and communicates with the inside of the reaction outer cavity;

[0044] The second exhaust cavity is further provided with a third through hole communicating with the inside of the reaction outer cavity, and the third through hole is arranged close to the exhaust pipe.

[0045] In an implementation manner, the flat plate type atomic layer deposition device further comprises an integrated auxiliary assembly; the integrated auxiliary assembly comprises: a purge gas inlet pipeline and a purge gas outlet pipeline; the purge gas inlet pipeline and the purge gas outlet pipeline are arranged on opposite sides of the flared portion and are respectively communicated with the flared channel.

[0046] By arranging the flared portion at the gas inlet position, arranging multiple gas inlet channels equidistantly on the flared portion, arranging the gas inlet screen plate between the flared portion and the gas inlet end of the reaction outer cavity, and arranging the first exhaust cavity, the exhaust screen plate and the second exhaust cavity in sequence at the gas exhaust position, the gas phase precursor can be effectively diffused in the flared portion, uniformly enter the reaction inner cavity through the gas inlet screen plate, and then be uniformly exhausted from the reaction inner cavity through the first exhaust cavity, the exhaust screen plate and the second exhaust cavity in sequence, so that the uniformity of the flow field on the upper surface of the wafer in the reaction inner cavity is effectively improved, and the deposition of the gas phase precursor on the upper surface of the wafer is uniform.

[0047] By extending the first flow guide plate on both sides of the second heat insulation plate and extending the second flow guide plate on one side of the fourth heat insulation plate, the inner walls of the reaction outer cavity gas inlet end, the first flow guide plate, the reaction inner cavity, the second flow guide plate and the first exhaust cavity are flush at the corresponding connection positions, the exhaust screen plate is flush with the inner wall of the first exhaust cavity on the side close to the heat insulation block, and the guide surface, the upper surface of the carrier, the upper surface of the wafer, the upper surface of the limiting portion and the upper surface of the heat insulation block are flush. In this way, the flow field uniformity on the upper surface of the wafer in the reaction inner cavity can be further effectively controlled. By arranging the flow controller on the gas inlet channel and arranging the bottom of the first flow guide plate on the inclined surface of the inclined portion and the guide surface between the upper surface and the lower surface of the inner wall of the first flow guide plate, the gas flow in the gas inlet channel can be controlled, the flow rate of the gas phase precursor passing through the inclined portion through the guide surface is the same as the flow rate passing through the exhaust screen plate, and the flow field uniformity on the upper surface of the wafer in the reaction inner cavity is further effectively improved, the use amount of the gas phase precursor is effectively reduced, and the utilization rate of the gas phase precursor is greatly improved.

[0048] By parallelly arranging the first and second heat insulation plates between the gas inlet end of the reaction outer cavity and the gas inlet end of the reaction inner cavity, connecting the first and second heat insulation plates through the first elastic adjusting member with the reaction outer cavity, parallelly arranging the third and fourth heat insulation plates between the gas outlet end of the reaction inner cavity and the exhaust block, connecting the third and fourth heat insulation plates through the second elastic adjusting member with the exhaust block, and arranging the horizontally arranged multiple first and second horizontal screen parts, the two ends of the multiple first horizontal screen part extend out the first side screen part in the vertical direction, and the two ends of the multiple second horizontal screen part extend out the second side screen part in the vertical direction, which can effectively wrap the heating assembly and the reaction inner cavity in multiple layers, greatly reduce the heat loss of the heating assembly, effectively avoid the influence of the temperature change outside the reaction outer cavity on the heat in the area where the wafer is located, and effectively reduce the disassembly and assembly difficulty of the reaction inner cavity, facilitating the disassembly and assembly maintenance of the reaction inner cavity.

[0049] By oppositely arranging the first and second side screen parts, arranging the first connecting part between the ends of the first side screen part and the second connecting part between the ends of the second side screen part, parallelly arranging the first and second connecting parts, and arranging the first and second connecting parts at an inclined angle with the adjacent outer side wall of the reaction inner cavity, and arranging the side close to the reaction inner cavity of the second heat insulation plate as a mirror surface, the side close to the reaction inner cavity of the third heat insulation plate as a mirror surface, and the side close to the reaction inner cavity of the first horizontal screen part at the bottom, the side close to the reaction inner cavity of the first side screen part extending from the first horizontal screen part at the bottom, the side close to the reaction inner cavity of the second horizontal screen part at the top, and the side close to the reaction inner cavity of the second side screen part extending from the second horizontal screen part at the top as mirror surfaces, which not only effectively reduces the heat loss of the heating assembly between the first and second connecting parts, but also effectively reflects the heat radiation of the heating assembly through the distributed mirror surfaces, improving the heating effect on the upper surface of the wafer.

[0050] By arranging the telescopic shaft on the carrier end cover and slidingly connecting the telescopic shaft with the sliding channel on the reaction outer cavity, arranging the support shaft on the side of the support frame away from the heat insulation block, mounting the rolling bearing on the support shaft, abutting the rolling bearing with the inner bottom of the reaction inner cavity, arranging the sliding plate on the bottom of the support frame, arranging the mounting seat on the side of the exhaust block close to the carrier end cover, mounting the universal ball on the mounting seat and slidingly connecting the universal ball with the heat insulation block and the sliding plate, arranging the inclined part on the side of the support frame close to the first flow guide plate, arranging the limiting part on the end of the support frame away from the inclined part, placing the carrier between the inclined part and the limiting part, arranging the positioning pin between the inclined part and the limiting part of the support frame, and arranging the positioning pin hole on the carrier and matching with the positioning pin, which can effectively facilitate the taking and placing of the carrier and improve the convenience of disassembly and assembly maintenance of the carrier. BRIEF DESCRIPTION OF DRAWINGS

[0051] In order to more clearly illustrate the technical solutions of the present application, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, for those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

[0052] Figure 1 A schematic diagram of the overall structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure.

[0053] Figure 2 A schematic diagram of the sectional structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure One ;

[0054] Figure 3 A schematic diagram of the sectional structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Two ;

[0055] Figure 4 A schematic diagram of the sectional structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Three ;

[0056] Figure 5 A schematic diagram of the sectional structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Four ;

[0057] Figure 6 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure One ;

[0058] Figure 7 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Two ;

[0059] Figure 8 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Three ;

[0060] Figure 9 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Four ;

[0061] Figure 10 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Five ;

[0062] Figure 11 A schematic diagram of the local structure of a flat plate type atomic layer deposition device provided by the embodiments of the present application is shown in the figure. Figure Six .

[0063] In the picture:

[0064] 1-Outer reaction cavity, 2-Inner reaction cavity, 21-Mounting plate, 3-Flow field optimization component, 31-Flanged block, 311-Flow guide, 312-Flanged part, 313-Inlet channel, 314-Flow controller, 32-Exhaust block, 321-First exhaust chamber, 322-Second exhaust chamber, 323-Exhaust port, 324-Third through hole, 325-Sealing buckle, 326-Mounting block, 33-Universal ball, 4-Inlet screen plate, 41-First through hole, 5-Exhaust screen plate, 51-Second through hole, 6-First filling... 7-Second heating wire, 8-Heat insulation assembly, 81-First heat insulation screen assembly, 811-First horizontal screen section, 812-First side screen section, 813-First support column, 82-Second heat insulation screen assembly, 821-Second horizontal screen section, 822-Second side screen section, 823-Second support column, 83-Third heat insulation screen assembly, 831-First heat insulation plate, 832-Second heat insulation plate, 833-First guide plate, 834-First elastic adjustment element, 8341-First adjustment bolt, 8342-First elastic element, 835- Arc-shaped limiting plate, 84-Fourth heat insulation screen assembly, 841-Third heat insulation plate, 842-Fourth heat insulation plate, 843-Second guide plate, 844-Second elastic adjustment component, 8441-Second adjustment bolt, 8442-Second elastic component, 85-Strip connecting part, 9-Integrated auxiliary component, 91-Air pressure regulating pipe, 92-Purge intake pipe, 93-Purge exhaust pipe, 10-Detachable loading vehicle assembly, 101-Support frame, 102-Carrier, 103-Heat insulation block, 104-Carrier end cap, 105- 106-Support shaft, 107-Rolling bearing, 108-Gap, 109-Connecting rib, 1010-Inclined part, 1011-Guide surface, 1012-Limiting part, 1013-Slide plate, 1014-Sealing handle, 1015-Handle, 1016-Positioning pin, 1017-Mounting base, 1018-Supporting foot, 9-Integrated auxiliary component, 11-Second limiting block, 12-Sliding channel, 13-Linear bearing, 14-Positioning protrusion, 15-First limiting block, 100-Plasma generator. Detailed Implementation

[0065] This application provides a planar atomic layer deposition apparatus, such as Figure 1 and Figure 4 As shown, the planar atomic layer deposition apparatus includes an outer reaction chamber 1 and an inner reaction chamber 2, with the inner reaction chamber 2 disposed inside the outer reaction chamber 1.

[0066] Among them, such as Figure 1 As shown, the planar atomic layer deposition apparatus further includes: a flow field optimization component 3 for optimizing the flow field inside the reaction chamber 2, the flow field optimization component 3 including: a flared block 31 and an exhaust block 32; as shownFigure 2 As shown, the flared block 31 includes a flow guide part 311 and a flared part 312 arranged in sequence in the air inlet direction, and a plurality of air inlet channels 313 are equidistantly arranged on the flared part 312; one end of the flow guide part 311 is connected to the plasma generator 100, and the other end is connected to the flared part 312, and the other end of the flared part 312 is connected to the air inlet end of the reaction outer cavity 1, and as shown, Figure 4 As shown, the flared part 312 and the air inlet end of the reaction outer cavity 1 are provided with an air inlet screen plate 4, the air inlet screen plate 4 is fixedly connected with the flared part 312, and a plurality of first through holes 41 are equidistantly arranged on the air inlet screen plate 4.

[0067] In this way, the air inlet channels 313 are in communication with the flared part 312, a plurality of air inlet channels 313 are equidistantly arranged and symmetrically distributed on both sides of the flow guide part 311. The air inlet screen plate 4 is arranged between the flared part 312 and the air inlet end of the reaction outer cavity 1, and a plurality of first through holes 41 are equidistantly arranged on the air inlet screen plate 4, so that the gaseous precursors diffused to the flared part 312 can flow out uniformly along the plurality of first through holes 41.

[0068] The exhaust block 32 is connected to the air outlet end of the reaction outer cavity 1, as shown, Figure 5 As shown, the exhaust block 32 is provided with a first exhaust cavity 321 and a second exhaust cavity 322 which are in communication with each other, and the first exhaust cavity 321 is in communication with the air outlet end of the reaction inner cavity 2. An exhaust screen plate 5 is arranged at the communication part of the first exhaust cavity 321 and the second exhaust cavity 322, a plurality of second through holes 51 are arranged on the exhaust screen plate 5, an exhaust pipe opening 323 is arranged on the second exhaust cavity 322, and the exhaust pipe opening is connected to a vacuum pump.

[0069] Specifically, as shown in Figure 5 and Figure 6 The top of the second exhaust cavity 322 is provided with an exhaust screen plate 5, the exhaust screen plate 5 is fixedly connected with the exhaust block 32, a plurality of second through holes 51 are arranged on the exhaust screen plate 5, and the second through holes 51 are arranged at intervals. Figure 5 As shown, the second through holes 51 increase in size in the direction from the middle to the ends of the exhaust screen plate 5, so that the size of the second through holes 51 increases in the exhaust direction.

[0070] The exhaust direction is the gas flow direction within the second exhaust chamber 322. The second exhaust chamber 322 is located inside the exhaust block 32 and is annular in shape. An exhaust port 323 is provided at the bottom of the second exhaust chamber 322. Through the cooperation of the second through hole 51 and the second exhaust chamber 322, the flow rate of the vapor precursor flowing into the second exhaust chamber 322 along the second through hole 51 can be made uniform. Thus, with the cooperation of the first through hole 41, the second through hole 51, and the second exhaust chamber 322, the uniformity of the flow field on the upper surface of the wafer within the reaction cavity 2 is effectively improved, resulting in uniform deposition of the vapor precursor on the upper surface of the wafer.

[0071] The flared block 31 and the inlet sieve plate 4 provided in this embodiment allow the gaseous precursor to enter the reaction cavity 2 at a uniform flow rate. Through the exhaust sieve plate 5 of the exhaust block 32, the gaseous precursor is discharged from the reaction cavity 2 at a uniform flow rate, which effectively improves the uniformity of the flow field on the upper surface of the wafer in the reaction cavity 2, thereby making the deposition of the gaseous precursor on the upper surface of the wafer uniform.

[0072] In one implementation, the flow guide 311 has a flow guide channel inside, and the flared section 312 has a flared channel inside that communicates with the air inlet channel 313. The two ends of the flared channel are inclined outwards along the air inlet direction. The plasma generator 100, the flow guide channel, the flared channel, the first through hole 41, and the air inlet end of the reaction outer cavity 1 are sequentially connected. For example... Figure 2 As shown, the flared portion 312 is flat and its two ends are inclined outward along the direction from the guide portion 311 to the reaction outer cavity 1, so that the gas phase precursor can be evenly diffused into the flared portion 312 along the air intake channel 313.

[0073] In this way, the gas phase precursor passes through the air intake channel 313 in sequence through the flared channel, the first through hole 41 and the air intake end of the reaction outer cavity 1 to ensure uniform air intake.

[0074] In one implementation, such as Figure 5 As shown, the second exhaust chamber 322 has an annular layout, and the first exhaust chamber 321 is located within the annular layout of the second exhaust chamber 322. The diameter of the second through hole 51 increases along the exhaust direction, which is the gas flow direction within the second exhaust chamber 322. The exhaust port 323 is located away from the exhaust sieve plate 5. In this way, the discharged gaseous precursor can flow along the annular layout of the second exhaust chamber 322 and be discharged from the exhaust port 323. The annular layout of the second through hole 51 and the second exhaust chamber 322 can make the flow rate of the gaseous precursor smooth and uniform.

[0075] It should be noted that the flow direction of the gas phase precursor gas flow is sequentially through the gas inlet channel 313, the flared channel, the first through hole 41, the gas inlet end of the reaction outer cavity 1, the gas inlet end of the reaction inner cavity 2, and into the inside of the reaction inner cavity 2, and sequentially along the gas outlet end of the reaction inner cavity 2, the first exhaust cavity 321, the second through hole 51, the second exhaust cavity 322, and the exhaust pipe 323.

[0076] Wherein, the gas flow direction is different in different structures, for example, as shown in Figure 5 The dashed arrow on the upper half of the annular channel of the second exhaust cavity 322 is the gas flow direction. Specifically, the gas flows from the middle region to the two side regions. Correspondingly, the flow direction of the lower half of the annular channel of the second exhaust cavity 322 is from the two side regions to the exhaust pipe 323 at the middle region.

[0077] In an implementation manner, as shown in Figure 2 and Figure 3 A flow controller 314 is arranged on the gas inlet channel 313 to adjust the gas flow rate of the gas inlet channel 313. In this way, the flow controller 314 arranged on the gas inlet end of the gas inlet channel 313 can effectively balance the flow rate difference between the gas phase precursor flowing out of the first through hole 41 and flowing into the second through hole 51, thereby effectively improving the uniformity of the flow field on the upper surface of the wafer, so that the deposition of the gas phase precursor on the upper surface of the wafer is uniform.

[0078] In an implementation manner, the flat plate type atomic layer deposition device further comprises a heating assembly, as shown in Figure 2 , Figure 4 and Figure 6 The heating assembly comprises a first heating wire 6. As shown in Figure 7 An installation plate 21 can be arranged above the outside of the reaction inner cavity 2, and the first heating wire 6 is fixedly installed on the installation plate 21 close to one side of the reaction inner cavity 2, that is, the first heating wire 6 is distributed in a serpentine shape above the outside of the reaction inner cavity 2, and the gap of the first heating wire 6 decreases in the direction from the flared block 31 to the exhaust block 32. Thus, the heat taken away by the flow field optimization assembly 3 is effectively balanced, so that the heat distribution above the wafer is uniform.

[0079] As shown in Figure 7 The heating assembly comprises a second heating wire 7, and the second heating wire 7 is symmetrically installed at both ends of the outside of the reaction inner cavity 2. The second heating wire 7 is symmetrically distributed relative to the two ends of the reaction inner cavity 2, and in combination with the first heating wire 6, the heat distribution in the region where the wafer is located is uniform, effectively improving the uniformity and stability of the heat field in the region where the wafer is located.

[0080] In an implementation manner, as shown in Figure 7As shown, the third heat shield group 83 is arranged between the gas inlet end of the reaction outer cavity 1 and the gas inlet end of the reaction inner cavity 2, and includes a first heat shield plate 831 and a second heat shield plate 832 arranged in parallel, and the first heat shield plate 831 and the second heat shield plate 832 are connected by a first elastic adjusting member 834. The second heat shield plate 832 extends to both sides to form a first flow guide plate 833, the first flow guide plate 833 penetrates the first heat shield plate 831, and the two ends of the first flow guide plate 833 are in communication with the gas inlet end of the reaction outer cavity 1 and the gas inlet end of the reaction inner cavity 2 respectively. In actual application, the first flow guide plate 833 is integrally formed with the second heat shield plate 832.

[0081] As shown in Figure 10 , the first elastic adjusting member 834 includes a first adjusting bolt 8341 and a first elastic member 8342. The first elastic member 8342 is arranged between the first heat shield plate 831 and the second heat shield plate 832, and the first adjusting bolt 8341 penetrates the second heat shield plate 832, the first elastic member 8342 and the first heat shield plate 831 in sequence and is threadedly connected with the inner wall of the reaction outer cavity 1.

[0082] In this way, by rotating the first adjusting bolt 8341, the distance between the first heat shield plate 831 and the second heat shield plate 832 can be adjusted. The side of the second heat shield plate 832 close to the reaction inner cavity 2 is a mirror surface.

[0083] In one implementation mode, as shown in Figure 10 , the first heat shield plate 831 extends an arc-shaped limiting plate 835 along the side where the second heat shield plate 832 is located. The arc-shaped limiting plate 835 and the second heat shield plate 832 have a gap therebetween. The gas inlet end of the reaction outer cavity 1 is provided with a first slot capable of cooperating with the first flow guide plate 833, and the gas inlet end of the reaction inner cavity 2 is provided with a second slot abutting against the first flow guide plate 833. When the arc-shaped limiting plate 835 abuts against the second heat shield plate 832, the first flow guide plate 833 abuts against the first slot.

[0084] In one implementation mode, the fourth heat shield group 84 is arranged between the gas outlet end of the reaction inner cavity 2 and the exhaust block 32. The third heat shield group 83 and the fourth heat shield group 84 are the same in structure, and the difference lies in that they are arranged at different positions. The third heat shield group 83 is arranged between the gas inlet end of the reaction outer cavity 1 and the gas inlet end of the reaction inner cavity 2, and the fourth heat shield group 84 is arranged between the gas outlet end of the reaction inner cavity 2 and the exhaust block 32.

[0085] As shown in Figure 11As shown, the fourth heat shield group 84 includes the third heat shield plate 841 and the fourth heat shield plate 842 arranged in parallel, and the third heat shield plate 841 and the fourth heat shield plate 842 are connected by the second elastic adjusting piece 844. The fourth heat shield plate 842 extends out of the second flow guide plate 843 along the side where the gas outlet end of the reaction inner cavity 2 is located. The second flow guide plate 843 penetrates through the third heat shield plate 841, and the two ends of the second flow guide plate 843 are in communication with the gas outlet end of the reaction inner cavity 2 and the first exhaust cavity 321, respectively. In actual application, the second flow guide plate 843 is integrally formed with the fourth heat shield plate 842.

[0086] As shown in Figure 11 , the second elastic adjusting piece 844 includes the second adjusting bolt 8441 and the second elastic piece 8442. The second elastic piece 8442 is arranged between the third heat shield plate 841 and the fourth heat shield plate 842. The second adjusting bolt 8441 penetrates through the third heat shield plate 841, the second elastic piece 8442 and the fourth heat shield plate 842 in sequence and is threadedly connected with the inner wall of the exhaust block 32. The side of the third heat shield plate 841 close to the reaction inner cavity 2 is a mirror surface. It should be noted that in actual application, the first elastic piece 8342 and the second elastic piece 8442 can be arranged as compression springs.

[0087] In an implementation manner, the gas outlet end of the reaction inner cavity 2 is provided with a third slot capable of cooperating with the second flow guide plate 843.

[0088] In an implementation manner, the flat plate type atomic layer deposition device further includes a heat insulation assembly 8. The heat insulation assembly 8 includes a first heat shield group 81, a second heat shield group 82, a third heat shield group and a fourth heat shield group. As shown in Figure 7 , the heating assembly and the reaction outer cavity 1 are provided with the first heat shield group 81 and the second heat shield group 82 which are spliced with each other. The first heat shield group 81 and the second heat shield group 82 are respectively located at the top and the bottom of the reaction inner cavity 2. After the first heat shield group 81 and the second heat shield group 82 are spliced, they cooperate with the third heat shield group 83 and the fourth heat shield group 84 to form a heat insulation layer which wraps the heating assembly and the reaction inner cavity 2.

[0089] The first heat shield group 81 includes a plurality of first horizontal screen parts 811 arranged horizontally. As shown in Figure 7 , the plurality of first horizontal screen parts 811 are integrally connected by a plurality of first support columns 813. The first horizontal screen part 811 located at the bottom is fixedly connected with the outer top of the reaction inner cavity 2. The two ends of the plurality of first horizontal screen parts 811 extend out of the first side screen part 812 in the vertical direction. The two first side screen parts 812 corresponding to the two ends of the reaction inner cavity 2 are oppositely arranged.

[0090] As shown in Figure 7As shown, the second heat insulation panel group 82 includes a multi-layered second horizontal panel 821 arranged horizontally. The multi-layered second horizontal panel 821 is integrally connected by a number of second support columns 823. The topmost second horizontal panel 821 is fixedly connected to the bottom of the reaction cavity 2. The two ends of the multi-layered second horizontal panel 821 extend into second side panels 822 in the vertical direction, which are arranged opposite to each other between the two second side panels 822 at both ends of the reaction cavity 2.

[0091] Among them, such as Figure 7 As shown, the ends of the first heat insulation panel group 81 and the second heat insulation panel group 82 form strip-shaped connecting portions 85, which are inclined to the adjacent outer surface of the reaction cavity 2. More specifically, the first side panel 812 and the second side panel 822 are arranged opposite to each other, a first connecting portion is provided between the ends of the first side panel 812, and a second connecting portion is provided between the ends of the second side panel 822. The first connecting portion and the second connecting portion are arranged parallel to each other and inclined to the adjacent outer wall of the reaction cavity 2.

[0092] In this embodiment, the first side screen portion 812 and the second side screen portion 822 are correspondingly arranged, and a first gap is provided between the first connecting portion and the second connecting portion. The first gaps located at both ends of the reaction cavity 2 are symmetrically inclined. In this way, the length of the connecting gap can be increased, thereby reducing the heat dissipation efficiency at the gap, that is, improving the heat insulation performance.

[0093] It should be noted that the sides of the first horizontal screen portion 811 at the bottom closest to the reaction cavity 2, the sides of the first side screen portions 812 extending from the first horizontal screen portion 811 at the bottom to both ends closest to the reaction cavity 2, the sides of the second horizontal screen portion 821 at the top closest to the reaction cavity 2, and the sides of the second side screen portions 822 extending from the second horizontal screen portion 821 at the top to both ends closest to the reaction cavity 2 are all mirrored. This allows for the reflection of infrared thermal radiation from the heating components (first heating wire 6 and second heating wire 7), improving the heating effect on the upper surface of the wafer.

[0094] A universal ball 33 is installed at the bottom of the reaction cavity 2 near the third heat shield assembly 83. The universal ball 33 is located in the middle of the bottom of the reaction cavity 2 near the third heat shield assembly 83. A support foot 1018 is installed at the bottom of the reaction cavity 2 near the exhaust block 32. The support foot 1018 is located at both ends of the bottom of the reaction cavity 2 near the exhaust block 32. The universal ball 33 and the support foot 1018 pass through the second heat shield assembly 82 and abut against the inner bottom of the reaction outer cavity 1.

[0095] When the reaction inner cavity 2 is installed, the third heat shield group 83 is connected with the inner wall of the reaction outer cavity 1, then the fourth heat shield group 84 is connected with the exhaust block 32, then the reaction inner cavity 2 is pushed into the reaction outer cavity 1, finally the exhaust block 32 is connected with the gas outlet end of the reaction outer cavity 1, and the two sides of the reaction inner cavity 2 are respectively abutted against the second heat shield plate 832 and the third heat shield plate 841.

[0096] In an implementation manner, the flat plate type atomic layer deposition device further comprises a detachable carrier assembly 10, and the detachable carrier assembly 10 comprises a support frame 101, a heat insulation block 103, a carrier end cover 104 and a carrier 102 for containing a wafer.

[0097] As shown in Figure 3 , the support frame 101 penetrates through the first exhaust cavity 321 and extends to the inside of the reaction inner cavity 2, the heat insulation block 103 is arranged between the support frame 101 and the carrier end cover 104, the carrier end cover 104 is fixedly arranged with a handle 1015 away from the heat insulation block 103, and the carrier end cover 104 is arranged with an extension shaft 105 which is slidingly connected with the sliding channel 12 on the reaction outer cavity 1.

[0098] Specifically, as shown in Figure 3 , the sliding channel 12 is arranged with a linear bearing 13, the extension shaft 105 is slidingly connected with the linear bearing 13, the sliding channel 12 extends inwardly to form a positioning protrusion 14, the sliding channel 12 is arranged with a first limiting block 15 away from the carrier end cover 104, the first limiting block 15 is fixedly connected with the reaction outer cavity 1, the linear bearing 13 is located in the sliding channel 12 and the two ends of the linear bearing 13 are respectively abutted against the positioning protrusion 14 and the first limiting block 15, and the extension shaft 105 is slidingly connected with the linear bearing 13 through the first limiting block 15. The extension shaft 105 is fixedly connected with a second limiting block 11 which is capable of abutting against the positioning protrusion 14 away from the carrier end cover 104.

[0099] The support frame 101 is arranged with a support shaft 106 at both ends away from the heat insulation block 103, as shown in Figure 8 , the support shaft 106 is arranged with a rolling bearing 107 which is abutted against the inner bottom of the reaction inner cavity 2, and the bottom of the support frame 101 is arranged with a sliding plate 1013, the exhaust block 32 is arranged with a mounting seat 1017 corresponding to the sliding plate 1013 at both ends away from the carrier end cover 104, and the mounting seat 1017 is arranged with a universal ball 33 which is slidingly connected with the heat insulation block 103 and the sliding plate 1013.

[0100] As shown in Figure 8As shown, the support frame 101 is provided with multiple excavations 108 arranged in a linear distribution, and connecting ribs 109 are provided between the multiple excavations 108. The slide plate 1013 is provided at the bottom of the connecting ribs 109.

[0101] like Figure 8 and Figure 9 As shown, the support frame 101 has an inclined portion 1010 near the first guide plate 833. The inclined portion 1010 is inclined upward along the gas flow direction. A guide surface 1011 is connected to the top of the inclined portion 1010. A limiting portion 1012 is provided at the end of the support frame 101 away from the inclined portion 1010. The carrier 102 is placed between the inclined portion 1010 and the limiting portion 1012. Figure 9 As shown, a positioning pin 1016 is provided on the support frame 101 between the inclined part 1010 and the limiting part 1012, and a positioning pin hole that cooperates with the positioning pin 1016 is provided on the carrier 102; a placement groove is provided in the middle of the carrier 102, and a wafer is placed in the placement groove.

[0102] like Figure 8 As shown, sealing handles 1014 are provided at both ends of the outer side of the vehicle end cap 104, and sealing buckles 325 that cooperate with the sealing handles 1014 are provided on the exhaust block 32. Figure 2 and Figure 6 As shown, mounting blocks 326 are fixedly installed at both ends of the exhaust block 32, and sealing buckles 325 are fixedly installed on the mounting blocks 326. The sealing handle 1014 can be engaged with the sealing buckle 325.

[0103] In one implementation, the inner walls of the corresponding connection points of the outer reaction chamber 1, the first guide plate 833, the inner reaction chamber 2, the second guide plate 843, and the first exhaust chamber 321 are flush; the side of the exhaust screen plate 5 near the heat insulation block 103 is flush with the inner wall of the first exhaust chamber 321, and the guide surface 1011, the upper surface of the carrier 102, the upper surface of the wafer, and the upper surface of the limiting part 1012 are flush with the upper surface of the heat insulation block 103; the bottom of the first guide plate 833 is located on the inclined surface of the inclined part 1010, and the guide surface 1011 is located between the upper and lower surfaces of the inner wall of the first guide plate 833.

[0104] In one implementation, the planar atomic layer deposition apparatus further includes: integrated auxiliary components; such as... Figure 2 and Figure 3 As shown, the integrated auxiliary component 9 includes a pressure regulating pipe 91, which is disposed on the outer wall of the reaction outer cavity 1 and connects to the interior of the reaction outer cavity 1.

[0105] like Figure 5 and Figure 6As shown, the second exhaust cavity 322 is further provided with a third through hole 324 communicating with the inside of the reaction outer cavity 1, and the third through hole 324 is arranged close to the exhaust port 323. The third through hole 324 communicates the space between the reaction outer cavity 1 and the reaction inner cavity 2. The gas pressure adjusting pipeline 91 can always make the gas pressure between the reaction outer cavity 1 and the reaction inner cavity 2 greater than the gas pressure inside the reaction inner cavity 2, effectively avoiding the deposition of the gas-phase precursor flowing into the space between the reaction outer cavity 1 and the reaction inner cavity 2 during the deposition reaction. The third through hole 324 can effectively control the pressure difference between the gas pressure between the reaction outer cavity 1 and the reaction inner cavity 2 and the gas pressure inside the reaction inner cavity 2, avoiding the influence of the pressure difference on the gas flow of the gas-phase precursor.

[0106] In an implementation manner, the flat plate type atomic layer deposition device further comprises an integrated auxiliary assembly; as Figure 2 As shown, the integrated auxiliary assembly 9 comprises: a purge gas inlet pipeline 92 and a purge gas outlet pipeline 93; the purge gas inlet pipeline 92 and the purge gas outlet pipeline 93 are arranged on opposite sides of the flared portion 312 and respectively communicate with the flared channel.

[0107] The flat plate type atomic layer deposition device provided by the embodiment of the present application, the first heat shield group 81, the second heat shield group 82, the third heat shield group 83 and the fourth heat shield group 84 are wrapped outside the heating assembly and the reaction outer cavity 1, which not only effectively reduces the heat loss of the heating assembly and improves the stability of the thermal field, but also facilitates the disassembly and cleaning of the reaction inner cavity 2 by cooperation of the third heat shield group 83, the fourth heat shield group 84, the universal ball 33 arranged at the bottom of the reaction inner cavity 1 and the supporting leg 1018, thereby improving the disassembly efficiency of the whole device.

[0108] Wherein, the upper surface of the carrier 102 is flush with the guide surface 1011, the upper surface of the wafer, the upper surface of the limiting portion 1012 and the upper surface of the heat insulation block 103; the side of the exhaust screen plate 5 close to the heat insulation block 103 is flush with the inner wall of the first exhaust cavity 321; the inner wall of the reaction outer cavity 1, the first flow guide plate 833, the reaction inner cavity 2, the second flow guide plate 843 and the first exhaust cavity 321 are flush at the corresponding connection positions; the bottom of the first flow guide plate 833 is located on the inclined surface of the inclined portion 1010, and the guide surface 1011 is located between the upper surface and the lower surface of the inner wall of the first flow guide plate 833. In this way, the gas flow channel formed between the gas inlet end of the reaction outer cavity 1 and the exhaust block 32 can effectively control the uniformity of the flow field inside the reaction inner cavity 2 located on the upper surface of the wafer, and the flow rate of the gas-phase precursor passing through the guide surface 1011 after passing through the inclined portion 1010 can be controlled to be the same as the flow rate of the gas-phase precursor passing through the exhaust screen plate 5 by controlling the gas flow in the gas inlet channel 313 by the flow controller 314, thereby further improving the uniformity of the flow field inside the reaction inner cavity 2 located on the upper surface of the wafer, effectively reducing the amount of gas-phase precursor, and greatly improving the utilization rate and deposition efficiency of the gas-phase precursor.

[0109] The flat plate type atomic layer deposition device provided by the embodiment of the present application has the following complete working principle:

[0110] In operation, first, the support frame 101 is pulled outwards by the handle 1015, and the wafer is placed into the carrier 102 on the support frame 101, and then pushed into the support frame 101 until the carrier end cover 104 is covered with the exhaust block 32, and the sealing handle 1014 is buckled with the sealing buckle 325. Then, the vacuum pump is started to draw the inside of the reaction outer cavity 1 and the reaction inner cavity 2 to a vacuum state, and then inert gas is introduced into the gas pressure adjusting pipeline 91, to ensure that the gas pressure between the reaction outer cavity 1 and the reaction inner cavity 2 is greater than the gas pressure inside the reaction inner cavity 2 under the vacuum state, to avoid the flow of gas-phase precursors into the space between the reaction outer cavity 1 and the reaction inner cavity 2 during the deposition reaction, causing deposition pollution. When the inside of the reaction outer cavity 1 and the reaction inner cavity 2 is in a vacuum state, and the gas pressure between the reaction outer cavity 1 and the reaction inner cavity 2 is greater than the gas pressure inside the reaction inner cavity 2, the first heating wire 6 and the second heating wire 7 work at the same time to heat the temperature of the upper surface of the wafer to the reaction temperature, and then the gas-phase precursors are alternately introduced into the gas inlet end of the flow controller 314 in pulses until the thin film with the specified thickness is grown on the upper surface of the wafer. After the reaction is stopped, the flow controller 314, the first heating wire 6, the second heating wire 7 and the vacuum pump are closed, the inert gas continues to be introduced into the gas pressure adjusting pipeline 91 until the internal gas pressure of the reaction outer cavity 1 and the reaction inner cavity 2 is roughly the same as the external atmospheric pressure of the reaction outer cavity 1, the gas pressure adjusting pipeline 91 is closed, and then the sealing handle 1014 and the sealing buckle 325 are opened. The support frame 101 is pulled outwards by the handle 1015, and the wafer placed on the carrier 102 is taken out, and the operation is completed. It should be noted that the plasma generator 100, the purge gas inlet pipeline 92 and the purge gas outlet pipeline 93 are in a closed state during the operation.

[0111] When cleaning, the carrier 102 is first taken out on the support frame 101, and then pushed into the support frame 101 inwardly until the carrier end cover 104 is covered with the exhaust block 32, and the sealing handle 1014 is buckled with the sealing buckle 325. The vacuum pump is started to extract the inside of the reaction outer cavity 1 and the reaction inner cavity 2 to a vacuum state, then inert gas is introduced into the gas pressure adjusting pipeline 91, to ensure that the gas pressure between the reaction outer cavity 1 and the reaction inner cavity 2 under the vacuum state is greater than the gas pressure inside the reaction inner cavity 2, the plasma generator 100 is opened, and cleaning gas is introduced into the gas inlet end of the plasma generator 100 to clean the reaction inner cavity 2. After a specified time, the plasma generator 100, the vacuum pump and the gas pressure adjusting pipeline 91 are closed, then the purge gas inlet pipeline 92 and the purge gas outlet pipeline 93 are opened, and inert gas is introduced into the purge gas inlet pipeline 92, and the purge gas inlet pipeline 92 and the purge gas outlet pipeline 93 are closed after a specified time. Then the gas pressure adjusting pipeline 91 is opened to introduce inert gas until the internal gas pressure of the reaction outer cavity 1 and the reaction inner cavity 2 is roughly the same as the external atmospheric pressure of the reaction outer cavity 1, and the gas pressure adjusting pipeline 91 is closed, and the cleaning is completed. It should be noted that the first heating wire 6, the second heating wire 7 and the flow controller 314 are in the closed state during the cleaning process.

[0112] By applying the technical solutions provided in the present application, the flared portion 312 is arranged at the gas inlet position, a plurality of gas inlet channels 313 are arranged equidistantly on the flared portion 312, the gas inlet screen plate 4 is arranged between the flared portion 312 and the gas inlet end of the reaction outer cavity 1, and the first exhaust cavity 321, the exhaust screen plate 5 and the second exhaust cavity 322 are sequentially communicated at the exhaust position, which can make the gas-phase precursor effectively diffuse in the flared portion 312, then uniformly enter the reaction inner cavity 2 through the gas inlet screen plate 4, and then uniformly exhaust from the reaction inner cavity 2 through the first exhaust cavity 321, the exhaust screen plate 5 and the second exhaust cavity 322 in sequence, effectively improving the uniformity of the wafer upper surface flow field in the reaction inner cavity 2, and making the deposition of the gas-phase precursor on the wafer upper surface uniform.

[0113] The above specific embodiments further illustrate the purposes, technical solutions and beneficial effects of the present application, and it should be understood that the above is only a specific embodiment of the present application, and is not used to limit the protection scope of the present application, and any modification, equivalent replacement, improvement, etc. made on the basis of the technical solutions of the present application shall be included in the protection scope of the present application.

Claims

1. A planar atomic layer deposition apparatus, characterized in that, The application relates to a plasma reactor, which comprises an outer reaction cavity (1), an inner reaction cavity (2) arranged in the outer reaction cavity (1), and a flow field optimization assembly (3), wherein the flow field optimization assembly (3) comprises a flared block (31) and an exhaust block (32). The flared block (31) comprises a flow guide part (311) and a flared part (312) arranged in sequence along an air inlet direction, a plurality of air inlet channels (313) are equidistantly arranged on the flared part (312), one end of the flow guide part (311) is connected with a plasma generator (100), the other end of the flow guide part (311) is connected with the flared part (312), the other end of the flared part (312) is connected with an air inlet end of the outer reaction cavity (1), and an air inlet screen plate (4) is arranged between the flared part (312) and the air inlet end of the outer reaction cavity (1), a plurality of first through holes (41) are equidistantly arranged on the air inlet screen plate (4). The exhaust block (32) is connected with an air outlet end of the outer reaction cavity (1), the exhaust block (32) is provided with a first exhaust cavity (321) and a second exhaust cavity (322) in communication, the first exhaust cavity (321) is connected with an air outlet end of the inner reaction cavity (2), an exhaust screen plate (5) is arranged at the communication position of the first exhaust cavity (321) and the second exhaust cavity (322), a plurality of second through holes (51) are arranged on the exhaust screen plate (5), and an exhaust pipe opening (323) is arranged on the second exhaust cavity (322). A flow guide channel is arranged in the flow guide part (311), a flared channel in communication with the air inlet channel (313) is arranged in the flared part (312), the two ends of the flared channel are inclined and outwardly expanded along the air inlet direction, the plasma generator (100), the flow guide channel, the flared channel, the first through hole (41) and the air inlet end of the outer reaction cavity (1) are sequentially communicated.

2. The apparatus according to claim 1, wherein The second exhaust cavity (322) is arranged in a ring shape, and the first exhaust cavity (321) is arranged in the ring shape of the second exhaust cavity (322).

3. The apparatus according to claim 1, wherein The aperture of the second through hole (51) increases along an exhaust direction, and the exhaust direction is the gas flow direction in the second exhaust cavity (322). The exhaust pipe opening (323) is arranged at a position far away from the exhaust screen plate (5). A flow controller (314) is arranged on the air inlet channel (313) to adjust the air inlet flow of the air inlet channel (313).

4. A flat panel atomic layer deposition apparatus according to any one of claims 1 to 3, wherein A heating assembly is further arranged, and the heating assembly comprises a first heating wire (6) and a second heating wire (7).

5. The apparatus according to claim 1, wherein The first heating wire (6) is arranged in a serpentine shape above the outer part of the inner reaction cavity (2), and the gap of the first heating wire (6) decreases along the direction from the flared block (31) to the exhaust block (32); and the second heating wire (7) is symmetrically arranged at the two ends of the outer part of the inner reaction cavity (2). A third heat shield group (83) is arranged between the air inlet end of the outer reaction cavity (1) and the air inlet end of the inner reaction cavity (2).

6. The flat panel atomic layer deposition apparatus according to claim 5, wherein ​ The third heat shield group (83) comprises a first heat insulation plate (831) and a second heat insulation plate (832) arranged in parallel, the first heat insulation plate (831) and the second heat insulation plate (832) are connected through a first elastic adjusting piece (834), the second heat insulation plate (832) extends out a first flow guide plate (833) on both sides, the first flow guide plate (833) penetrates the first heat insulation plate (831), and the two ends of the first flow guide plate (833) are in communication with the gas inlet end of the reaction outer cavity (1) and the gas inlet end of the reaction inner cavity (2) respectively; The first elastic adjusting piece (834) comprises a first adjusting bolt (8341) and a first elastic piece (8342), the first elastic piece (8342) is arranged between the first heat insulation plate (831) and the second heat insulation plate (832), and the first adjusting bolt (8341) is in threaded connection with the inner wall of the reaction outer cavity (1) in sequence by penetrating the second heat insulation plate (832), the first elastic piece (8342) and the first heat insulation plate (831). The second heat insulation plate (832) is a mirror surface close to the reaction inner cavity (2).

7. The apparatus according to claim 6, wherein The first heat insulation plate (831) extends out an arc-shaped limiting plate (835) on the side where the second heat insulation plate (832) is located, and the arc-shaped limiting plate (835) has a gap with the second heat insulation plate (832); The gas inlet end of the reaction outer cavity (1) is provided with a first notch capable of cooperating with the first flow guide plate (833), and when the arc-shaped limiting plate (835) abuts against the second heat insulation plate (832), the first flow guide plate (833) abuts against the first notch.

8. The apparatus according to claim 6, wherein The fourth heat shield group (84) is arranged between the gas outlet end of the reaction inner cavity (2) and the exhaust block (32), and the fourth heat shield group (84) comprises a third heat insulation plate (841) and a fourth heat insulation plate (842) arranged in parallel; The third heat insulation plate (841) and the fourth heat insulation plate (842) are connected through a second elastic adjusting piece (844), the fourth heat insulation plate (842) extends out a second flow guide plate (843) on the side where the gas outlet end of the reaction inner cavity (2) is located, the second flow guide plate (843) penetrates the third heat insulation plate (841), and the two ends of the second flow guide plate (843) are in communication with the gas outlet end of the reaction inner cavity (2) and the first exhaust cavity (321) respectively; The second elastic adjusting piece (844) comprises a second adjusting bolt (8441) and a second elastic piece (8442), the second elastic piece (8442) is arranged between the third heat insulation plate (841) and the fourth heat insulation plate (842), and the second adjusting bolt (8441) is in threaded connection with the inner wall of the exhaust block (32) in sequence by penetrating the third heat insulation plate (841), the second elastic piece (8442) and the fourth heat insulation plate (842); The third heat insulation plate (841) is a mirror surface close to the reaction inner cavity.

9. The apparatus according to claim 8, wherein The gas outlet end of the reaction inner cavity (2) is provided with a third notch capable of cooperating with the second flow guide plate (843).

10. The flat panel atomic layer deposition apparatus according to claim 5, wherein A first heat shield group (81) and a second heat shield group (82) are arranged between the heating assembly and the reaction outer cavity (1) and are spliced with each other; The first heat shield group (81) comprises a plurality of first horizontal screen parts (811) arranged horizontally, the plurality of first horizontal screen parts (811) are integrally connected through first support columns (813), the first horizontal screen part (811) at the bottom is connected with the outer top of the reaction inner cavity (2), and both ends of the plurality of first horizontal screen parts (811) extend out first side screen parts (812) in the vertical direction; The second heat shield group (82) comprises a plurality of second horizontal screen parts (821) arranged horizontally, the plurality of second horizontal screen parts (821) are integrally connected through second support columns (823), the second horizontal screen part (821) at the top is connected with the outer bottom of the reaction inner cavity (2), and both ends of the plurality of second horizontal screen parts (821) extend out second side screen parts (822) in the vertical direction; The first side screen part (812) and the second side screen part (822) are arranged opposite to each other, a first connecting part is arranged between the ends of the first side screen part (812), a second connecting part is arranged between the ends of the second side screen part (822), the first connecting part and the second connecting part are arranged in parallel, and are arranged obliquely with respect to the adjacent outer side wall of the reaction inner cavity (2); The side of the first horizontal screen part (811) at the bottom close to the reaction inner cavity (2), the side of the first side screen part (812) extending from both ends of the first horizontal screen part (811) at the bottom close to the reaction inner cavity (2), the side of the second horizontal screen part (821) at the top close to the reaction inner cavity (2), and the side of the second side screen part (822) extending from both ends of the second horizontal screen part (821) at the top close to the reaction inner cavity (2) are all mirror surfaces.

11. The apparatus according to claim 8, wherein Further comprising a detachable carrier assembly (10), the detachable carrier assembly (10) comprises a support frame (101), a heat insulation block (103), a carrier end cover (104), and a carrier (102) for containing wafers; The support frame (101) extends through the first exhaust cavity (321) and extends to the inside of the reaction inner cavity (2), the heat insulation block (103) is arranged between the support frame (101) and the carrier end cover (104), the carrier end cover (104) is provided with a telescopic shaft (105), and the telescopic shaft (105) is slidably connected with the sliding channel (12) on the reaction outer cavity (1). The support frame (101) is provided with a support shaft (106) on the side away from the heat insulation block (103), the support shaft (106) is installed with a rolling bearing (107), the rolling bearing (107) abuts against the inner bottom of the reaction inner cavity (2), the bottom of the support frame (101) is provided with a sliding plate (1013), the exhaust block (32) is provided with a mounting seat (1017) on the side close to the carrier end cover (104), the mounting seat (1017) is installed with a universal ball (33) which is in sliding connection with the heat insulation block (103) and the sliding plate (1013); The support frame (101) is provided with a plurality of linearly distributed notched openings (108), a plurality of the notched openings (108) are provided with connecting ribs (109), and the sliding plate (1013) is arranged at the bottom of the connecting rib (109); The support frame (101) is provided with an inclined portion (1010) on the side close to the first flow guide plate (833), the inclined portion (1010) is arranged in an upward inclination along the gas flow direction, and the top of the inclined portion (1010) is connected with a guide surface (1011); The support frame (101) is provided with a limiting portion (1012) on the end away from the inclined portion (1010), the carrier (102) is placed between the inclined portion (1010) and the limiting portion (1012), the support frame (101) is provided with a positioning pin (1016) between the inclined portion (1010) and the limiting portion (1012), and the carrier (102) is provided with a positioning pin hole matched with the positioning pin (1016); The outer side of the carrier end cover (104) is provided with a sealing handle (1014), and the exhaust block (32) is provided with a sealing buckle (325) matched with the sealing handle (1014).

12. The apparatus according to claim 11, wherein The inner walls of the gas inlet end of the reaction outer cavity (1), the first flow guide plate (833), the reaction inner cavity (2), the second flow guide plate (843) and the first exhaust cavity (321) are flush at the corresponding connection positions; The exhaust screen plate (5) is flush with the inner wall of the first exhaust cavity (321) on the side close to the heat insulation block (103); The guide surface (1011), the upper surface of the carrier (102), the upper surface of the wafer, the upper surface of the limiting portion (1012) and the upper surface of the heat insulation block (103) are flush; The bottom of the first flow guide plate (833) is located on the inclined surface of the inclined portion (1010), and the guide surface (1011) is located between the upper surface and the lower surface of the inner wall of the first flow guide plate (833).

13. The apparatus of claim 1, wherein: The gas pressure adjusting pipeline (91) is arranged on the outer wall of the reaction outer cavity (1) and communicates with the inside of the reaction outer cavity (1); The second exhaust cavity (322) is further provided with a third through hole (324) which communicates with the inside of the reaction outer cavity (1), and the third through hole (324) is arranged close to the exhaust pipe opening (323).

14. The apparatus according to claim 2, wherein The integrated auxiliary assembly (9) comprises a blowing air inlet pipe (92) and a blowing air outlet pipe (93), which are arranged on opposite sides of the flared portion (312) and communicate with the flared channel respectively.

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