Micro LED epitaxial graphite carrier plate manufacturing method and system

Abstract

The invention discloses a Micro LED epitaxial graphite carrier plate manufacturing method and system, and the method comprises the steps: synchronously collecting wafer data of a Micro LED wafer, and constructing a wafer coordinate system; performing weighted calculation on the PL wavelength and the COT wavelength corresponding to the same position coordinate point, outputting a three-dimensional point cloud data set, and storing the three-dimensional point cloud data set to obtain target data; reading target data, and extracting wafer coordinate data and wavelength difference data; determining a plurality of thermal field grades, and binding the thermal field grades with corresponding color identifiers to obtain a thermal field grade map; the Euclidean distance similarity of thermal field distribution in each thermal field area is calculated and grouped, and compensation strategy data is correspondingly output; performing depth compensation on the design of the graphite carrying disc, and mapping and outputting drawing data; and processing the graphite carrying disc according to the drawing data. According to the three-dimensional thermal field graph collaborative design, the corresponding three-dimensional design drawing is output through mapping, the drawing is verified to form a closed loop, real-time compensation of wafer thermal expansion can be achieved, and batch production is facilitated.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a Micro LED epitaxial graphite carrier disc manufacturing method and system. BACKGROUND

[0002] As the core of the new generation of display technology, Micro LED has extremely high requirements for epitaxial growth precision, which is specifically manifested in the small chip size, high integration density, and strict standards for wavelength uniformity, which requires the wavelength uniformity of the whole chip to be less than 2 nanometers. Therefore, there is a strong dependence on the temperature field uniformity and thermal stability in the epitaxial process, and the temperature control precision needs to reach ±1℃.

[0003] Currently, graphite carrier discs are used as key components in the epitaxial growth process in mainstream technologies, but they have obvious limitations when applied to Micro LED mass production. The existing method relies on graphite carrier discs combined with multi-zone resistance radiation heating to regulate temperature, but due to the difference in thermal expansion coefficient between graphite and sapphire substrates, the thermal response lags at high temperatures, resulting in a decrease in heat conduction efficiency. At the same time, the heating partitioning precision is insufficient, and the temperature difference between the edge and center regions is prone to being too large, making it difficult to meet the uniformity requirements.

[0004] The existing technology has the following shortcomings: first, the graphite carrier disc thermal field regulation has a lag problem, which cannot compensate for the gap changes between the substrate and the carrier disc in real time, and the power distribution of the partition temperature control system is uneven, resulting in poor overall thermal uniformity; second, the edge region is affected by air turbulence, heat loss, and mechanical structure defects, resulting in uneven distribution of reaction gas, large temperature fluctuations, and serious wavelength drift; more importantly, the current carrier disc design lacks real-time data feedback and closed-loop control between process parameters, and process adjustment relies on manual experience and offline testing. PL testing and chip full testing data cannot be used for dynamic optimization design, resulting in a long development cycle, distorted thermal field simulation, and inability to meet the needs of rapid iteration of Micro LED technology. SUMMARY

[0005] In view of the shortcomings of the prior art, the purpose of the present application is to provide a Micro LED epitaxial graphite carrier disc manufacturing method and system to solve the above-mentioned problems in the prior art.

[0006] The first aspect of the present application provides a Micro LED epitaxial graphite carrier disc manufacturing method, which comprises: synchronously collecting wafer data of the Micro LED wafer by a PL tester and a COT testing machine, and constructing a wafer coordinate system according to the wafer data; performing weighted calculation on the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system, outputting a three-dimensional point cloud data set and storing to obtain target data; reading the target data, extracting wafer coordinate data and wavelength difference data according to the target data; determining a plurality of thermal field levels according to the wafer coordinate data and binding corresponding color marks to obtain a thermal field level map according to the wavelength difference data; calculating the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field level map and grouping, and corresponding output compensation strategy data; carrying out deep compensation on the design of the graphite carrier according to the thermal field level map and the compensation strategy data, and mapping output drawing data; processing the graphite carrier according to the drawing data to obtain a Micro LED epitaxial graphite carrier.

[0007] According to an aspect of the above technical solution, the wafer data of the Micro LED wafer is synchronously collected by the PL tester and the COT tester, and the wafer coordinate system is constructed according to the wafer data. The wafer data of the Micro LED wafer is synchronously collected by the PL tester and the COT tester, and the target wavelength is defined according to the wafer data. According to the wafer data and the target wavelength, a wafer coordinate system is constructed with the wafer center as the origin, the radius direction as the Y axis, and the circumferential direction as the X axis.

[0008] According to an aspect of the above technical solution, the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system are weighted and calculated, and the three-dimensional point cloud data set is output and stored to obtain the target data. According to the wafer coordinate system, the PL wavelength and the COT wavelength of the same position coordinate point in the wafer coordinate system are weighted and calculated, and the three-dimensional point cloud data set is output and stored as target data in a preset format.

[0009] According to an aspect of the above technical solution, the calculation expression for weighting and calculating the PL wavelength and the COT wavelength of the same position coordinate point in the wafer coordinate system is: λ wavelength =aλ PL +bλ COT , and λ z =λ wavelength -λ0. In the formula, λ PL is the PL wavelength, λ COT is the COT wavelength, a and b are weight coefficients, 1≥a≥0, 1≥b≥0, a+b=1, λ z is the wavelength difference, and λ0 is the target wavelength.

[0010] According to an aspect of the above technical solution, according to the wavelength difference data, a plurality of thermal field levels are determined according to the wafer coordinate data, and are bound with corresponding color marks to obtain a thermal field level map, comprising: According to the wavelength difference data, a plurality of thermal field temperature regions are defined according to the wafer coordinate data, and a plurality of corresponding thermal field levels are determined; The plurality of thermal field levels are bound with a plurality of preset color marks to obtain a thermal field level map.

[0011] According to an aspect of the above technical solution, the wavelength difference λ z The region of λ0+2nm corresponds to the first thermal field region, and is bound with the first color; The wavelength difference λ0+2nm>λ z The region of λ0+1nm corresponds to the second thermal field region, and is bound with the second color; The wavelength difference λ0-1nm>λ z The region of λ0-2nm corresponds to the third thermal field region, and is bound with the third color; The wavelength difference λ z The region of <λ0-2nm corresponds to the fourth thermal field region, and is bound with the fourth color; The wavelength difference |λ z The region of -λ0|≤1nm corresponds to the fifth thermal field region, i.e., the temperature control qualified region, and is bound with the fifth color.

[0012] According to an aspect of the above technical solution, the steps of calculating the Euclidean distance similarity of the thermal field distribution in each thermal field region in the thermal field level map and grouping, and corresponding to output compensation strategy data, comprising: The Euclidean distance similarity of the thermal field distribution in each thermal field region in the thermal field level map is calculated; Regions with Euclidean distance similarity ≥85% or Euclidean distance ≤0.3 are classified to obtain a plurality of clusters, and the compensation strategy data is output through a spectral clustering algorithm.

[0013] According to an aspect of the above technical solution, according to the thermal field level map and the compensation strategy data, the design of the graphite carrier disc is deeply compensated, and the mapping output drawing data is output, wherein the thermal field level-graphite carrier disc region contour depth compensation mapping relationship is: ΔH(mm)=k•|Δthermal field level|; Wherein, k≥0.001, in the process of mapping output drawing data, when the thermal field level is greater than the fifth thermal field level corresponding to the fifth thermal field region, it is upward convex ΔH, and when the thermal field level is less than the third thermal field level corresponding to the third thermal field region, it is downward digging |ΔH|.

[0014] According to an aspect of the above technical solution, the step of mapping output drawing data comprises: The three-dimensional structure in each contour region of the graphite carrier plate is automatically generated on the base model of the graphite carrier plate, and the structure depth is matched with the heat field level map.

[0015] The second aspect of the present application provides a Micro LED epitaxial graphite carrier plate manufacturing system applied to the method in the above technical solution, and the system comprises: A coordinate construction module is configured to synchronize acquisition of wafer data of a Micro LED wafer by a PL tester and a COT tester, and construct a wafer coordinate system according to the wafer data; A data storage module is configured to perform weighted calculation on PL wavelengths and COT wavelengths corresponding to the same position coordinate point in the wafer coordinate system, output a three-dimensional point cloud data set, and store the target data; A data extraction module is configured to read the target data, and extract wafer coordinate data and wavelength difference data according to the target data; A heat field calibration module is configured to determine a plurality of heat field levels according to the wafer coordinate data according to the wavelength difference data, and bind corresponding color identifiers to obtain a heat field level map; A strategy output module is configured to calculate the Euclidean distance similarity of heat field distribution in each heat field region in the heat field level map and perform grouping, and output compensation strategy data correspondingly; A drawing mapping module is configured to perform depth compensation on the design of the graphite carrier plate according to the heat field level map and the compensation strategy data, and output drawing data; A processing execution module is configured to process the graphite carrier plate according to the drawing data to obtain a Micro LED epitaxial graphite carrier plate.

[0016] Compared with the prior art, the Micro LED epitaxial graphite carrier plate manufacturing method and system of the present application has the following beneficial effects: The present application generates a light-emitting wavelength point cloud distribution map of each heat field region pocket in each graphite carrier plate through PL and COT big data grabbing, and then generates a three-dimensional heat field map through point cloud data, and according to the three-dimensional heat field map, the corresponding three-dimensional design drawing is mapped and output, and the drawing is verified to form a closed loop, which can realize real-time compensation of wafer thermal expansion, and is beneficial to batch production. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which: Figure 1A flowchart of a Micro LED epitaxial graphite carrier manufacturing method in an embodiment of the present application is shown in FIG. 1. Figure 2 A schematic diagram of a clustered thermal field corresponding to step S50 in an embodiment of the present application is shown in FIG. 2. Figure One Figure 3 A schematic diagram of a clustered thermal field corresponding to step S50 in an embodiment of the present application is shown in FIG. 2. Figure Two Figure 4 A schematic diagram of a clustered thermal field corresponding to step S50 in an embodiment of the present application is shown in FIG. 2. Figure Three Figure 5 A structural block diagram of a Micro LED epitaxial graphite carrier manufacturing system in an embodiment of the present application is shown in FIG. 3. DETAILED DESCRIPTION

[0018] In order to make the objectives, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings. However, the present application can be realized in many different forms, and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0019] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can be a middle element. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or there can be a middle element. The terms "vertical", "horizontal", "left", "right", and similar expressions used herein are for illustrative purposes only.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0021] Embodiment One Referring to Figure 1 The first embodiment of the present application provides a Micro LED epitaxial graphite carrier manufacturing method, which comprises steps S10-S70: Step S10, synchronously collect wafer data of a Micro LED wafer by a PL tester and a COT tester, and construct a wafer coordinate system according to the wafer data.

[0022] ​​​The wafer data of the PL (photoluminescence) wavelength and the COT (chip full test) wavelength of the wafer are synchronously collected by the PL tester and the COT tester, the sampling density of the PL wavelength data is greater than or equal to 200 points per piece, the coordinate error is less than or equal to 0.1 mm, and the COT data covers the chip points of the whole wafer.

[0023] Specifically, the wafer data of a 4-inch Micro LED wafer is synchronously collected by the PL tester and the COT tester in the embodiment, and the target wavelength, that is, the wavelength threshold, is defined according to the wafer data, and then the wafer coordinate system corresponding to the Micro LED wafer is constructed with the wafer center as the origin (0, 0), the radius direction as the Y axis (range ± 50 mm), and the circumferential direction as the X axis (range ± 50 mm).

[0024] More specifically, the coordinate range of the wafer coordinate system is X∈[X1, X2]mm, Y∈[Y1, Y2]mm, wherein -25.5mm≥X1≥-150mm, 150mm≥X2≥25.5mm, -25.5mm≥Y1≥-150mm, 150mm≥Y2≥25.5mm.

[0025] The size parameters and coordinate ranges of the wafer size are shown in Table 1.

[0026] Table 1

[0027] In step S20, the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system are weighted and calculated, and a three-dimensional point cloud data set is output and stored to obtain target data.

[0028] After the wafer data is collected and the corresponding wafer coordinate system is constructed, the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system are weighted and calculated, a three-dimensional point cloud data set is output, and then the three-dimensional point cloud data set is stored to obtain target data.

[0029] Specifically, the PL wavelength λ PL of the same position coordinate point (x, y) and the COT wavelength λ COT are weighted and calculated according to the following calculation expression: λ wavelength =0.7λ PL +0.3λ COT , and λ z =λ wavelength -λ0. In the formula, λ PL is the PL wavelength, λ COT is the COT wavelength, and λ zλ0 is the target wavelength.

[0030] In this embodiment, the PL wavelength λ PL and the COT wavelength λ COT are weighted and calculated, and a three-dimensional point cloud dataset {(x, y, λz) | x, y ∈ [-50, 50], λz ∈ [-5 nm, 5 nm]} is output, which is then converted into a CSV format for storage to obtain target data.

[0031] In step S30, the target data is read, and wafer coordinate data and wavelength difference data are extracted from the target data.

[0032] After the three-dimensional point cloud dataset is converted into a CSV format for storage to obtain target data, the target data is read, and wafer coordinate data and wavelength difference data are extracted from the target data, i.e., a CSV file, and abnormal data contained in the target data is removed.

[0033] Specifically, after the target data is stored, wafer coordinate data (x, y) and wavelength difference data (λz) are extracted from the target data, i.e., a CSV file, data points with a wavelength value exceeding λ0±C nm, C≥3, are removed, time alignment is performed during data extraction, so that the time difference between the collection of the PL wavelength and the COT wavelength is ≤D ms, D≥0, and space standardization processing is performed on the column name.

[0034] In step S40, a plurality of thermal field levels are determined according to the wafer coordinate data based on the wavelength difference data, and corresponding color identifiers are bound to obtain a thermal field level diagram.

[0035] After the wavelength difference data is extracted from the target data, i.e., a CSV file, a plurality of thermal field levels corresponding to the Micro LED wafer are determined based on the wavelength difference data and the corresponding wafer coordinate data, such as a first thermal field level, a second thermal field level, etc., and then each thermal field level is bound to a corresponding color identifier, i.e., the corresponding color is assigned to the region profile of each thermal field level, to obtain a thermal field level diagram, so that different colors can be used to distinguish thermal fields.

[0036] Specifically, the region with a wavelength difference λ z >λ0+2nm corresponds to a first thermal field region and is bound to a first color; The region with a wavelength difference λ0+2nm>λ z >λ0+1nm corresponds to a second thermal field region and is bound to a second color; The region with a wavelength difference λ0-1nm>λ zThe region of <λ0-2nm> corresponds to the third thermal field region and is bound with the third color; Wavelength difference λ z The region of <λ0-2nm> corresponds to the fourth thermal field region and is bound with the fourth color; Wavelength difference |λ z The region of <λ0-1nm> corresponds to the fifth thermal field region, i.e., the temperature control qualified region, and is bound with the fifth color.

[0037] In some optional embodiments, the first color corresponding to the first thermal field region is deep red, which is used to mark the highest temperature region, and then the second color corresponding to the second thermal field region is orange red, which is used to mark the second highest temperature region, so as to determine the high temperature region; the third color corresponding to the third thermal field region is deep blue, which is used to mark the second lowest temperature region, and the fourth color corresponding to the fourth thermal field region is light blue, which is used to mark the lowest temperature region, so as to determine the low temperature region; and the fifth color corresponding to the fifth thermal field region is green, which is used to mark the temperature control qualified region.

[0038] In the present embodiment, as Figures 2-4 After the thermal field temperature regions are marked by different colors, drawing output is performed, the color is strictly bound with the grading boundary, the original boundary is expanded to ensure the completeness of the edge data, and then a PNG image of at least 300 dpi is output, i.e., the thermal field grading map is obtained.

[0039] In step S50, the Euclidean distance similarity of the thermal field distribution in each thermal field region of the thermal field grading map is calculated and grouped, and compensation strategy data is correspondingly output.

[0040] In the present embodiment, the step of calculating the Euclidean distance similarity of the thermal field distribution in each thermal field region of the thermal field grading map and grouping to correspondingly output compensation strategy data comprises: The Euclidean distance similarity of the thermal field distribution in each thermal field region of the thermal field grading map is calculated. Regions with a Euclidean distance similarity ≥85% or a Euclidean distance ≤0.3 are classified to obtain multiple clusters, and compensation strategy data is correspondingly output by a spectral clustering algorithm.

[0041] Specifically, the Euclidean distance similarity or the Euclidean distance is used for classification and clustering, so as to drive grouping, including the thermal field grading map generated based on the wafer PL wavelength / COT wavelength fusion point cloud, the Euclidean distance similarity of the thermal field distribution in each thermal field region pocket is calculated, the pockets with a similarity ≥85% (or a distance ≤0.3) are classified into the same cluster, multiple compensation strategy groups are divided by a spectral clustering algorithm, and compensation strategy data is obtained.

[0042] Step S60, according to the thermal field grade map and the compensation strategy data, deep compensation is performed on the design of the graphite carrier plate, and drawing data is mapped and output.

[0043] In the embodiment, in the step of deep compensation on the design of the graphite carrier plate according to the thermal field grade map and the compensation strategy data, and mapping and outputting drawing data, the thermal field grade-graphite carrier plate region profile deep compensation mapping relationship is: ΔH(mm)=k•|Δthermal field grade|; Wherein, k≥0.001, in the process of mapping and outputting drawing data, when the thermal field grade is greater than the fifth thermal field grade corresponding to the fifth thermal field region, it is upward convex ΔH, when the thermal field grade is less than the third thermal field grade corresponding to the third thermal field region, it is downward deep digging |ΔH|.

[0044] Specifically, according to the thermal field grade map, the corresponding low-temperature zone of the groove structure is generated in the drawing data such as CAD drawing, and the compensation depth ΔH, the high-temperature zone corresponds to the convex structure |ΔH|.

[0045] In the embodiment, the step of mapping and outputting drawing data comprises: Automatic generation of three-dimensional structure in each contour region of the graphite carrier plate on the base model of the graphite carrier plate, so that the structure depth and the thermal field grade map are matched with each other.

[0046] Step S70, according to the drawing data, the graphite carrier plate is processed to obtain a Micro LED epitaxial graphite carrier plate.

[0047] After the graphite carrier plate is processed according to the mapped and output drawing data, the obtained graphite carrier plate, that is, the graphite carrier plate sample, needs to be tested, for example, three-coordinate or laser testing, and associated with the source data of PL wavelength / COT wavelength, to confirm the improvement result and then guide production.

[0048] Compared with the prior art, the Micro LED epitaxial graphite carrier plate manufacturing method shown in the embodiment has the following beneficial effects: The method shown in the embodiment synchronously collects wafer data of a Micro LED wafer by a PL tester and a COT testing machine, and constructs a wafer coordinate system according to the wafer data; the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system are weighted and calculated, three-dimensional point cloud data sets are output and stored to obtain target data; the target data is read, wafer coordinate data and wavelength difference data are extracted according to the target data; according to the wavelength difference data, a plurality of thermal field grades are determined according to the wafer coordinate data, and are bound with corresponding color marks to obtain a thermal field grade map; the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field grade map is calculated and grouped, and compensation strategy data is correspondingly output; the design of the graphite carrier disc is deeply compensated according to the thermal field grade map and the compensation strategy data, and drawing data is mapped and output; the graphite carrier disc is processed according to the drawing data, and a Micro LED epitaxial graphite carrier disc is obtained. The method shown in the embodiment generates a light-emitting wavelength point cloud distribution map of each thermal field region pocket in each graphite carrier disc through PL and COT big data grabbing, then generates a three-dimensional thermal field map through the point cloud data, cooperatively designs according to the three-dimensional thermal field map, maps and outputs the corresponding three-dimensional design drawing, and verifies the drawing to form a closed loop, which can realize real-time compensation of wafer thermal expansion and is beneficial to batch production.

[0049] Embodiment two Please refer to Figure 5 A Micro LED epitaxial graphite carrier disc manufacturing system applied to the method described in the above embodiment, the system comprises: A coordinate construction module 10 is configured to synchronously collect wafer data of a Micro LED wafer by a PL tester and a COT testing machine, and construct a wafer coordinate system according to the wafer data; A data storage module 20 is configured to perform weighted calculation on the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system, output three-dimensional point cloud data sets, and store the three-dimensional point cloud data sets to obtain target data; A data extraction module 30 is configured to read the target data, and extract wafer coordinate data and wavelength difference data according to the target data; A thermal field calibration module 40 is configured to determine a plurality of thermal field grades according to the wafer coordinate data according to the wavelength difference data, and bind the thermal field grades with corresponding color marks to obtain a thermal field grade map; A strategy output module 50 is configured to calculate the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field grade map and group the thermal field distribution, and output compensation strategy data correspondingly; A drawing mapping module 60 is configured to perform deep compensation on the design of the graphite carrier disc according to the thermal field grade map and the compensation strategy data, and map and output drawing data; The processing execution module 70 is configured to process the graphite carrier wafer according to the drawing data to obtain the Micro LED epitaxial graphite carrier wafer.

[0050] Compared with the prior art, the Micro LED epitaxial graphite carrier wafer manufacturing system has the following beneficial effects: The embodiment generates the light-emitting wavelength point cloud distribution map of each hot field area pocket in each graphite carrier wafer through PL and COT big data grabbing, generates a three-dimensional thermal field map through the point cloud data and a thermal field level, cooperatively designs according to the three-dimensional thermal field map, maps and outputs the corresponding three-dimensional design drawing, verifies the closed loop of the drawing, realizes real-time compensation of wafer thermal expansion, and is beneficial to batch production.

[0051] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0052] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the present application. It should be noted that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A method for manufacturing a Micro LED epitaxial graphite carrier disc, characterized in that, The method comprises: Synchronously collecting wafer data of the Micro LED wafer by the PL tester and the COT tester, and constructing a wafer coordinate system according to the wafer data; Performing weighted calculation on the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system, outputting a three-dimensional point cloud data set and storing to obtain target data; Reading the target data, extracting wafer coordinate data and wavelength difference data according to the target data; According to the wavelength difference data, determining a plurality of thermal field levels according to the wafer coordinate data, and binding with corresponding color marks to obtain a thermal field level diagram; Calculating the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field level diagram and grouping, and corresponding output compensation strategy data; According to the thermal field level diagram and the compensation strategy data, performing deep compensation on the design of the graphite carrier disc, and mapping output drawing data; According to the drawing data, processing the graphite carrier disc to obtain a Micro LED epitaxial graphite carrier disc. 2.The method of claim 1, wherein the graphite wafer is formed by a process comprising: forming a graphite wafer having a thickness of 0.5 mm or less; and polishing the graphite wafer to a surface roughness of 0.5 μm or less. The step of synchronously collecting wafer data of the Micro LED wafer by the PL tester and the COT tester, and constructing a wafer coordinate system according to the wafer data, comprises: Synchronously collecting wafer data of the Micro LED wafer by the PL tester and the COT tester, and defining a target wavelength according to the wafer data; According to the wafer data and the target wavelength, constructing a wafer coordinate system with the wafer center as the origin, the radius direction as the Y axis, and the circumferential direction as the X axis. 3.The method of claim 1, wherein the graphite wafer is formed by a process comprising: forming a graphite wafer having a thickness of 0.5 mm or less; and polishing the graphite wafer to a surface roughness of 0.5 μm or less. The step of performing weighted calculation on the PL wavelength and the COT wavelength corresponding to the same position coordinate point in the wafer coordinate system, outputting a three-dimensional point cloud data set and storing to obtain target data, comprises: According to the wafer coordinate system, performing weighted calculation on the PL wavelength and the COT wavelength of the same position coordinate point in the wafer coordinate system, outputting a three-dimensional point cloud data set and storing as target data in a preset format. 4.The method of claim 3, wherein the method further comprises, The calculation expression for performing weighted calculation on the PL wavelength and the COT wavelength of the same position coordinate point in the wafer coordinate system is: λ wavelength = aλ PL + bλ COT , and λ z = λ wavelength - λ0; In the formula, λ PL is a PL wavelength, λ COT is a COT wavelength, a and b are weight coefficients, 1≥a≥0, 1≥b≥0, a+b=1, λ z is a wavelength difference, and λ0is a target wavelength. 5.The method of claim 4, wherein the method further comprises, The step of determining a plurality of thermal field levels according to the wafer coordinate data, and binding with corresponding color marks to obtain a thermal field level diagram, comprises: According to the wafer coordinate data, defining a plurality of thermal field temperature regions and determining a plurality of corresponding thermal field levels; Binding the plurality of thermal field levels with a plurality of preset color marks to obtain a thermal field level diagram.

6. The Micro LED epitaxial graphite carrier disc manufacturing method according to claim 5, wherein: Wavelength difference λ z The region of λ0+2nm corresponds to the first thermal field region and is bound to the first color. Wavelength difference λ0+2nm>λ z The region of >λ0+1nm corresponds to the second thermal field region and is bound to the second color. Wavelength difference λ0-1 nm > λ z The region of > λ0-2 nm corresponds to the third thermal field region and is bound to the third color; Wavelength difference λ z The region of <λ0-2nm> corresponds to the fourth thermal field region and is bound to the fourth color. Wavelength difference |λ z The region of -λ0|≤1 nm corresponds to the fifth thermal field region, i.e. the temperature control qualified region, and is bound to the fifth color. 7.The Micro LED epitaxial graphite carrier disk manufacturing method of claim 1, wherein, The step of calculating the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field level diagram and grouping, and corresponding output compensation strategy data, comprises: Calculating the Euclidean distance similarity of thermal field distribution in each thermal field region in the thermal field level diagram; Classifying the regions with Euclidean distance similarity ≥ 85% or Euclidean distance ≤ 0.3 to obtain a plurality of clusters, and corresponding output compensation strategy data through a spectral clustering algorithm. 8.The method of claim 1-7, wherein, According to the thermal field grade map and the compensation strategy data, the design of the graphite carrier plate is deeply compensated, and in the step of mapping output drawing data, the thermal field grade-graphite carrier plate area contour depth compensation mapping relationship is: ΔH(mm)=k•|Δthermal field grade|; Wherein, k≥0.001, in the process of mapping output drawing data, when the thermal field grade is greater than the fifth thermal field grade corresponding to the fifth thermal field area, it is convex upward ΔH, when the thermal field grade is less than the third thermal field grade corresponding to the third thermal field area, it is deep digging |ΔH|. 9.The method of claim 8, wherein the graphite wafer is formed by a process comprising: forming a graphite wafer having a thickness of 0.5 mm or less; and polishing the graphite wafer to a surface roughness of 0.5 μm or less. The step of mapping output drawing data includes: Automatically generating three-dimensional structure in each contour area of the graphite carrier plate on the base model of the graphite carrier plate, so that the structure depth matches the thermal field grade map. 10.A system for manufacturing a Micro LED epitaxial graphite carrier disc, characterized in that, The system is applied to the method of any one of claims 1-9, and the system comprises: A coordinate construction module is configured to acquire wafer data of a Micro LED wafer by synchronously collecting the wafer data with a PL tester and a COT tester, and construct a wafer coordinate system according to the wafer data; A data storage module is configured to perform weighted calculation on PL wavelength and COT wavelength corresponding to the same position coordinate point in the wafer coordinate system, output three-dimensional point cloud data set and store to obtain target data; A data extraction module is configured to read the target data, and extract wafer coordinate data and wavelength difference data according to the target data; A thermal field calibration module is configured to determine a plurality of thermal field grades according to the wafer coordinate data according to the wavelength difference data, and bind corresponding color marks to obtain a thermal field grade map; A strategy output module is configured to calculate the Euclidean distance similarity of thermal field distribution in each thermal field area in the thermal field grade map and group, and output compensation strategy data correspondingly; A drawing mapping module is configured to perform deep compensation on the design of the graphite carrier plate according to the thermal field grade map and the compensation strategy data, and map output drawing data; A processing execution module is configured to process the graphite carrier plate according to the drawing data to obtain a Micro LED epitaxial graphite carrier plate.

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