Method of manufacturing semiconductor device and manufacturing system

Abstract

Embodiments of the present application provide a semiconductor device manufacturing method and a manufacturing system. The manufacturing system includes a laser emitting device, a light collecting device, and a controller. The laser emitting device is configured to form a scanning spot on a metal layer on a substrate by using a target laser beam to etch the metal layer. The light collecting device is configured to collect real-time emission light generated by backstreaming of the metal layer at the scanning spot after being ionized at a preset collection frequency, and generate real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light. The controller is coupled to the laser emitting device and the light collecting device, configured to obtain the real-time plasma spectrum data from the light collecting device, and control whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method and system for manufacturing a semiconductor device. Background Technology

[0002] Power semiconductor devices play a crucial role in modern electronic devices, widely used in power management, automotive electronics, and industrial control. With technological advancements, the performance and reliability requirements for these devices are constantly increasing, especially in high-power and high-frequency applications. To meet these requirements, the manufacturing processes for power semiconductor devices are continuously being optimized, with metal layer formation being a key step. Metal layers are typically obtained through etching processes, but insufficient etching precision often leads to pattern distortion, thereby affecting the performance of power semiconductor devices. Summary of the Invention

[0003] This application provides a method and system for manufacturing a semiconductor device, which at least partially solves the above-mentioned technical problems.

[0004] To achieve the above objectives, according to a first aspect of this application, a semiconductor device manufacturing system is provided, including a laser emitting device, a light acquisition device, and a controller. The laser emitting device is used to form a scanning spot on a metal layer on a substrate using a target laser beam to etch the metal layer. The light acquisition device is used to acquire real-time emitted light generated by the de-excitation of the metal layer at the scanning spot after plasma treatment at a preset acquisition frequency, and to generate real-time plasma spectral data of the etched metal at the scanning spot based on the real-time emitted light. The controller is coupled to the laser emitting device and the light acquisition device, and is used to acquire the real-time plasma spectral data from the light acquisition device, and to control whether the laser emitting device stops etching the metal layer at the scanning spot using the target laser beam based on the real-time plasma spectral data.

[0005] According to a second aspect of this application, a method for manufacturing a semiconductor device is provided, comprising the following steps:

[0006] The laser emitting device uses a target laser beam to form a scanning spot on a metal layer on a substrate in order to etch the metal layer;

[0007] The light acquisition device acquires the real-time emitted light generated by the de-excitation of the metal layer at the scanning spot after being plasma-ionized at a preset acquisition frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emitted light.

[0008] The controller acquires the real-time plasma spectral data from the light acquisition device, and based on the real-time plasma spectral data, controls whether the laser emitting device stops using the target laser beam to etch the metal layer at the scanning spot.

[0009] In the semiconductor device manufacturing method and system of this application embodiment, a laser emitting device uses a target laser beam to form a scanning spot on a metal layer on a substrate to etch the metal layer. High temperatures are generated when the target laser beam interacts with the metal surface at the scanning spot. These high temperatures cause the metal at the scanning spot to evaporate and ionize, forming plasma. Upon de-excitation, the plasma emits light of a specific wavelength. A light acquisition device collects the real-time emitted light generated by the de-excitation of the metal layer at the scanning spot after ionization, and generates real-time plasma spectral data of the etched metal at the scanning spot based on the real-time emitted light. A controller is coupled to the laser emitting device and the light acquisition device, and is used to acquire real-time plasma spectral data from the light acquisition device, and based on the real-time plasma spectral data, control whether the laser emitting device stops using the target laser beam to etch the metal layer at the scanning spot. Therefore, real-time plasma spectral data of the etched metal can be obtained based on the real-time emitted light collected during the etching process of the target laser beam. This allows for real-time monitoring of the type and amount of metal being etched at the current scanning spot, thereby determining the etching endpoint of the target laser beam at the scanning spot. This improves the etching accuracy of the target laser beam at the scanning spot and enhances the performance of semiconductor devices. Attached Figure Description

[0010] Figure 1 A schematic diagram illustrating the manufacturing of a semiconductor device using a semiconductor device manufacturing system provided in an exemplary embodiment of this application;

[0011] Figure 2 This is a schematic diagram of the structure of the laser emitting device provided in an exemplary embodiment of this application;

[0012] Figure 3 This is a schematic flowchart illustrating a method for manufacturing a semiconductor device provided in an exemplary embodiment of this application.

[0013] Explanation of reference numerals in the attached figures:

[0014] 100. Semiconductor device manufacturing systems;

[0015] 10. Laser emitting device; 101. Laser emitter; 102. Beam control assembly; 103. Beam shaping element; 104. Spatial light modulator; 105. Galvanometer module; 106. Focusing element;

[0016] 20. Light collection device;

[0017] 30. Controller;

[0018] 401, Substrate; 402, Metal layer;

[0019] 50. Vacuum adsorption stage. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0021] Figure 1 This is a schematic diagram illustrating the manufacturing of a semiconductor device using a semiconductor device manufacturing system provided in an exemplary embodiment of this application.

[0022] Please see Figure 1 The semiconductor device manufacturing system 100 provided in this application embodiment is used to pattern a metal layer 402 to create a patterned metal layer for the semiconductor device. The semiconductor device may include one or more of a power semiconductor device, a memory, and a sensor. When the semiconductor device is a power semiconductor device, the patterned metal layer may include at least one of the gate and source / drain electrodes of the power device.

[0023] Before patterning the metal layer 402 using the semiconductor device manufacturing system 100, the metal layer 402 needs to be formed on the substrate 401. The metal layer 402 can be formed by one or more of physical vapor deposition, chemical vapor deposition, electroplating, atomic layer deposition, molecular beam epitaxy, spin coating, and sintering. The metal layer 402 may include one or more metal films. In some embodiments, each metal film may include one or more of molybdenum, aluminum, copper, titanium, and tungsten. The substrate 401 may include, but is not limited to, semiconductor materials such as Si, SiC, or GaN. Exemplarily, the substrate 401 includes SiC. One or more dielectric layers may also be disposed on the substrate 401.

[0024] Furthermore, during the patterning of the metal layer 402 using the semiconductor device manufacturing system 100, the substrate 401 is placed on a vacuum adsorption stage 50, which is placed in a chamber (not shown in the figure). The pressure in the chamber can be controlled between 0.1 kPa and 100 kPa. A nozzle is provided in the chamber for injecting an inert gas into it. The inert gas protects the metal layer 402 that does not require etching. The inert gas may include at least one of nitrogen and argon. Alternatively, the inert gas can be used to blow away any material etched from the metal.

[0025] The semiconductor device manufacturing system 100 includes a laser emitting device 10, a light collecting device 20, and a controller 30. The controller 30 is coupled to the laser emitting device 10 and the light collecting device 20.

[0026] The laser emitting device 10 is used to form a scanning spot on the metal layer 402 on the substrate 401 using a target laser beam L1, thereby etching the metal layer 402. The principle of the target laser beam L1 etching the metal layer 402 is as follows: the target laser beam L1 ablates the metal layer 402 at the scanning spot, and an inert gas is used to blow away the ablation material, thus achieving the etching of the metal layer 402. During the ablation process, the interaction between the target laser beam L1 and the metal surface at the scanning spot generates high temperatures. These high temperatures cause the metal at the scanning spot to evaporate and ionize, forming plasma. Upon de-excitation, the plasma emits light of a specific wavelength.

[0027] Figure 2 This is a schematic diagram of the structure of the laser emitting device 10 provided in an exemplary embodiment of this application.

[0028] Please see Figure 2 The laser emitting device 10 includes a laser emitter 101. The laser emitter 101 emits an initial laser beam L0. The initial laser beam L0 can be a pulsed laser beam, with a pulse width on the femtosecond level (10^6 ms). -15 s) to picosecond level (10 -12 The initial laser beam L0 has an extremely short pulse duration, and the target laser beam L1, obtained by processing the initial laser beam L0, also has an extremely short pulse duration, which improves the processing accuracy of the metal layer 402. Furthermore, due to the extremely short pulse duration, the time for laser energy to deposit in the metal layer 402 is very limited, reducing heat diffusion. This means a very small heat-affected zone, reducing the risk of thermal damage and deformation of the metal layer 402 and maintaining the integrity of the area surrounding the scanning spot. Moreover, due to the extremely short pulse duration, the target laser beam L1 can remove material non-thermally, reducing the redeposition of molten material, which helps improve the quality and cleanliness of the etched surface.

[0029] In some embodiments, when the initial laser beam L0 is a pulsed laser beam, the pulse emission frequency of the initial laser beam L0 is 1kHz~10MHz to provide better etching speed and etching accuracy.

[0030] In some embodiments, the power of the initial laser beam L0 may be greater than or equal to 10W.

[0031] In some embodiments, the wavelength of the initial laser beam L0 includes at least one of 193nm~355nm and 1030nm~1064nm. When the wavelength of the initial laser beam L0 includes 193nm~355nm, the initial laser beam L0 includes an ultraviolet laser beam, which ensures that the target laser beam L1 can achieve high-precision etching with high absorption rate and low thermal impact. When the wavelength of the initial laser beam L0 includes 1030nm~1064nm, the initial laser beam L0 includes a near-infrared laser beam, which has deeper penetration into the thicker metal layer 402.

[0032] The number of laser emitters 101 can be one or more. Multiple laser emitters 101 can be the same or different. Depending on the requirements of the reflectivity, material, thickness and thermal effects of the metal layer 402, one laser emitter or multiple laser emitters can be selected to work together to achieve the etching of the metal layer 402.

[0033] In some embodiments, the laser emitting device 10 may include a first laser emitter and a second laser emitter. The first laser emitter emits a first initial laser beam L0 with a wavelength of 193 nm to 355 nm, and the second laser emitter emits a second initial laser beam L0 with a wavelength of 1030 nm to 1064 nm. During the etching of the metal layer 402, the beam combining component in the laser emitting device 10 can combine the first initial laser beam L0 and the second initial laser beam L0 to combine the advantages of the two laser beams to etch the metal layer 402.

[0034] In some embodiments, please refer to Figure 2 The laser emitting device 10 also includes a beam control component 102, which is used to adjust the initial laser beam L0 to form a target laser beam L1. Thus, the target laser beam L1 is obtained by adjusting the initial laser beam L0.

[0035] In some embodiments, the beam control assembly 102 may include a spot shaping element 103 located in the path of the initial laser beam L0. The spot shaping element 103 shapes the spot of the initial laser beam L0 so that the spot shape of the target laser beam L1 is shaped into a ring. Since the ring-shaped target laser beam L1 can provide a more uniform energy distribution, it reduces over-etching in the central region of the scan spot. Furthermore, because the energy distribution of the ring-shaped target laser beam L1 is in the ring region, it improves heat accumulation in the central region of the scan spot, thereby reducing thermal damage to the substrate 401. In addition, the ring-shaped target laser beam L1 can cover a larger area in a single scan, shortening the etching time.

[0036] In some embodiments, the ring can be a circular ring or an elliptical ring.

[0037] In some embodiments, the spot shaping element 103 includes, but is not limited to, a vortex phase plate.

[0038] In some embodiments, the maximum diameter of the annular target laser beam L1 is less than or equal to 5 micrometers to improve the etching accuracy of the target laser beam L1 on the metal layer 402 and reduce the heat-affected zone.

[0039] In some embodiments, please refer to Figure 2 The beam control assembly 102 may further include a spatial light modulator 104. In the travel path of the initial laser beam L0, the spot shaping element 103 is located after the spatial light modulator 104. Before the spot shaping element 103 shapes the spot of the initial laser beam L0, the spatial light modulator 104 adjusts the initial laser beam L0 to adjust at least one of the phase and amplitude of the target laser beam L1. Because the spatial light modulator 104 can dynamically adjust the initial laser beam L0, the target laser beam L1 can meet diverse etching requirements.

[0040] In some embodiments, please refer to Figure 2 The beam control assembly 102 also includes a galvanometer module 105, which is used to adjust the initial laser beam L0 after it has been shaped by the spot shaping element 103, so as to adjust the position of the scanning spot of the target laser beam L1 on the metal layer 402. In this way, the scanning spot is precisely positioned on the part of the metal layer 402 that needs to be etched by the galvanometer module 105, thereby improving the control capability of the target laser beam L1.

[0041] In some embodiments, the galvanometer module 105 may include one or more reflecting mirrors and a galvanometer motor, the galvanometer motor being used to drive the rotation or oscillation of one or more reflecting mirrors.

[0042] In some embodiments, the beam control assembly 102 further includes a focusing element 106 for focusing the initial laser beam L0 after adjustment by the galvanometer module 105 to form a target laser beam L1. Thus, the target laser beam L1 can achieve higher precision etching and reduce the heat-affected zone, lowering the risk of thermal damage to the substrate 401.

[0043] In some embodiments, the focusing element 106 may include, but is not limited to, an F-theta lens.

[0044] The light acquisition device 20 is used to acquire the real-time emitted light generated by the de-excitation of the metal layer 402 after ionization at the scanning spot according to a preset acquisition frequency, and to generate real-time plasma spectral data of the metal etched at the scanning spot based on the real-time emitted light. The real-time plasma spectral data includes the characteristic wavelength data of the currently etched metal element and the corresponding real-time intensity data. In this way, the light of a specific wavelength emitted by the metal layer 402 at the scanning spot after ionization and de-excitation by the target laser beam L1 is acquired in real time to obtain the real-time plasma spectral data of the metal etched at the scanning spot, thereby monitoring the type and residual amount of the metal etched at the scanning spot in real time.

[0045] It should be noted that different metal ions emit light with different wavelengths during deexcitation. Therefore, based on real-time plasmonic spectral data, the type of metal being etched at the scanning spot can be determined. For example, the characteristic spectral lines of aluminum (Al) include 396.15 nm (Al I line) and 309.27 nm (Al II line). The characteristic spectral lines of copper (Cu) include 521.82 nm (Cu I line) and 324.75 nm (Cu II line). The characteristic spectral lines of titanium (Ti) include 334.94 nm (Ti I line) and 336.12 nm (Ti II line).

[0046] Furthermore, as the metal at the scanning spot is gradually removed, the concentration of metal ions generated by the high temperature of the target laser beam L1 decreases, leading to a gradual decrease in real-time intensity data. Therefore, determining the etching endpoint at the scanning spot based on real-time plasma spectral data can improve the etching accuracy of the laser beam at the scanning spot and enhance the performance of semiconductor devices.

[0047] Furthermore, since the light acquisition device 20 collects the real-time emitted light generated by the de-excitation of the metal layer 402 after being plasma-ionized at the scanning spot, when the metal layer 402 includes one or more metal films, the light acquisition device 20 can collect the initial intensity data of each metal film after being plasma-ionized and de-excited by the target laser beam L1.

[0048] In some embodiments, the preset acquisition frequency can be greater than or equal to 1 kHz to quickly capture real-time emitted light and improve the accuracy of real-time plasma spectral data obtained by the light acquisition device 20.

[0049] In some embodiments, the light acquisition device 20 may include an image acquisition unit and a fiber optic spectrometer, with the fiber optic spectrometer connected to the image acquisition unit. The image acquisition unit is used to acquire real-time emitted light generated by the de-excitation of the metal layer 402 at the scanning spot after plasma treatment, in order to generate emission light data. The fiber optic spectrometer acquires the emission light data from the image acquisition unit and generates real-time plasma spectral data of the metal elements in the metal layer 402 at the scanning spot based on the emission light data.

[0050] The controller 30 is coupled to the laser emitting device 10 and the light acquisition device 20. The controller 30 acquires real-time plasma spectral data from the light acquisition device 20 and, based on this data, controls whether the laser emitting device stops etching the metal layer 402 at the scanning spot using the target laser beam L1. Thus, by acquiring real-time plasma spectral data of the etched metal based on the real-time emitted light collected during the metal etching process by the target laser beam, the type and residual amount of the currently etched metal can be monitored in real time, determining the etching endpoint of the target laser beam L1 at the scanning spot. This improves the etching accuracy of the target laser beam L1 at the scanning spot and enhances the performance of the semiconductor device.

[0051] In some embodiments, controlling whether the laser emitting device 10 stops etching the metal layer 402 at the scanning spot using the target laser beam L1 based on real-time plasma spectral data includes:

[0052] Based on real-time plasma spectral data, the characteristic wavelength data of the etched metal element and the corresponding real-time intensity data are determined.

[0053] The relative intensity coefficient is determined based on real-time intensity data and the corresponding initial intensity data.

[0054] When the relative intensity coefficient is less than or equal to the relative intensity threshold, the laser emitting device 10 is controlled to stop using the target laser beam L1 to etch the metal layer 402 at the scanning spot; and

[0055] When the relative intensity coefficient is greater than the relative intensity threshold, the laser emitting device 10 is controlled to use the target laser beam L1 to continue etching the metal layer 402 at the scanning spot.

[0056] In some embodiments of this application, the type of metal being etched by the current scanning spot and the real-time intensity data of that type of metal are determined based on real-time plasma spectral data. Then, based on the real-time intensity data of the etched metal and the initial intensity data, a relative intensity coefficient is determined. The relative intensity coefficient represents the relative magnitude of the intensity of the emitted light generated by the remaining metal of that type after ionization and de-excitation, compared to the intensity of the emitted light generated by the metal of that type after ionization and de-excitation when etching begins. Finally, if the relative intensity coefficient is less than or equal to a relative intensity threshold, it can be determined that the residual amount of that type of metal is very small, and the controller 30 controls the laser emitting device 10 to stop etching at the scanning spot. If the relative intensity coefficient is greater than the relative intensity threshold, it can be determined that the residual amount of that type of metal is still relatively large, and the controller 30 controls the laser emitting device 10 to continue etching the metal layer at the scanning spot until the relative intensity coefficient is less than the relative intensity threshold. In this way, the etching process of the target laser beam L1 at the scanning spot becomes controllable, and the etching accuracy is high.

[0057] In some embodiments, the relative intensity coefficient is equal to the percentage ratio of real-time intensity data to initial intensity data. Thus, a smaller relative intensity coefficient indicates a lower intensity of emitted light generated by the de-excitation of the remaining metal of that type after ionization, and also indicates a lower residual amount of that metal of that type at the scanning spot. Conversely, a larger relative intensity coefficient indicates a higher residual amount of that metal of that type at the scanning spot.

[0058] It should be noted that when the metal layer 402 comprises multiple metal films of different materials, the etching endpoint is defined as the bottom metal film being etched by the target laser beam L1 until its relative intensity coefficient is less than or equal to the relative intensity threshold. For example, when the metal layer 402 comprises a titanium layer and an aluminum layer stacked sequentially, the etching endpoint of the target laser beam L1 is defined as the titanium layer being etched by the target laser beam L1 until its relative intensity coefficient is less than or equal to the relative intensity threshold.

[0059] In some embodiments, the relative strength threshold may be less than or equal to 10% to ensure that the relative strength coefficient is less than or equal to the relative strength threshold and that there is little or no residual metal layer.

[0060] In some embodiments, before the laser emitting device 10 forms a scanning spot on the metal layer 402 on the substrate 401 using the target laser beam L1, the controller 30 is further configured to:

[0061] Obtain the feature values ​​of the metal layer 402 on the substrate 401 and the feature values ​​of the substrate 401;

[0062] Obtain the target pattern representing the metal layer 402 after etching, and determine the target etching path of the metal layer 402 etched by the target laser beam L1 based on the target pattern;

[0063] Based on the characteristic values ​​of the metal layer 402, the characteristic values ​​of the substrate 401, and the target etching path, the parameters of the target laser beam L1 are determined.

[0064] In some embodiments of this application, the parameters of the target laser beam L1 are determined based on the feature values ​​of the substrate 401 and the metal layer 402 and the target etching path corresponding to the target pattern, thereby improving the etching efficiency and etching accuracy of the target laser beam L1 on the metal layer 402, while reducing the risk of thermal damage to the substrate 401 caused by the target laser beam L1.

[0065] The metal layer 402 includes one or more metal films. In some embodiments, the characteristic values ​​of the metal layer 402 include the material of each metal film and the thickness of each metal film.

[0066] In some embodiments, the characteristic values ​​of substrate 401 include the material of substrate 401.

[0067] In some embodiments, the target etching path is designed based on etching the target pattern in one pass using a target laser beam L1.

[0068] In some embodiments, the parameters of the target laser beam L1 include energy density, which is greater than or equal to a first preset energy density and less than a second preset energy density. The first preset energy density represents the minimum energy density at which the metal layer 402 is ablated by the laser beam, and the second preset energy density represents the minimum energy density at which the substrate 401 is damaged by the laser beam. This ensures that the target laser beam L1 can etch the metal layer 402 while reducing the risk of damage to the substrate 401 caused by the target laser beam L1.

[0069] In some embodiments, the ratio of energy density to a first preset energy density is greater than 1.2 and less than or equal to 2. This ensures that the energy density of the target laser beam L1 is sufficiently high to increase the etching rate of the metal layer 402.

[0070] In some embodiments, the metal layer may include a first metal film and a second metal film stacked together, with the second metal film located between the first metal film and the substrate. The material of the first metal film is different from that of the second metal film. The energy density of the target laser beam L1 may include a first energy density for the first metal film and a second energy density for the second metal film, wherein the first energy density and the second energy density are different. Thus, by selecting a matching energy density according to the different metal materials, the etching efficiency and etching accuracy of the metal layer can be improved.

[0071] In some embodiments, where the metal layer comprises a stacked first metal film and a second metal film, the controller 30 is further configured to, when the acquired characteristic wavelength data changes from a first characteristic wavelength data corresponding to a metal element in the first metal film to a second characteristic wavelength data corresponding to a metal element in the second metal film, control the energy density of the target laser beam L1 emitted by the laser emitting device 10 to change from a first energy density to a second energy density. Thus, by acquiring real-time plasma spectral data, the process parameters for etching the metal layer 402 by the target laser beam L1 can be adjusted in real time to improve the etching accuracy at the scanning spot.

[0072] In some embodiments, the parameters of the target laser beam L1 also include the wavelength, pulse width, and scanning speed of the target laser beam L1.

[0073] For example, when the metal layer 402 includes an aluminum layer with a thickness of 0.1 micrometer to 5 micrometers and the substrate 401 includes SiC, the wavelength of the target laser beam L1 can be 248 nm, the pulse width can be 500 fs, the energy density can be 3 J / cm, and the scanning speed can be 200 mm / s.

[0074] In some embodiments, the controller 30 may include a computer and a PLC controller, the computer being coupled to the PLC controller. The PLC controller is connected to the laser emitting device 10 and the light collecting device 20 to control the laser emitting device 10 and the light collecting device 20.

[0075] Based on the same inventive concept, embodiments of this application also provide a method for manufacturing a semiconductor device. Figure 3 This is a schematic flowchart illustrating a method for manufacturing a semiconductor device according to an exemplary embodiment of this application. Please refer to... Figure 1 and Figure 3 The method for manufacturing semiconductor devices includes steps S101 to S103.

[0076] In step S101, the laser emitting device 10 uses a target laser beam L1 to form a scanning spot on the metal layer 402 on the substrate 401 to etch the metal layer 402.

[0077] In step S102, the light acquisition device 20 acquires the real-time emitted light generated by the de-excitation of the metal layer 402 after being plasma-ionized at the scanning spot according to the preset acquisition frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emitted light.

[0078] In step S103, the controller 30 acquires real-time plasma spectral data from the light acquisition device 20, and based on the real-time plasma spectral data, controls whether the laser emitting device 10 stops using the target laser beam L1 to etch the metal layer 402 at the scanning spot.

[0079] In the semiconductor device fabrication method of this application embodiment, high temperatures are generated when the target laser beam interacts with the metal surface at the scanning spot. The high temperature causes the metal at the scanning spot to evaporate and ionize, forming plasma. This plasma emits light of a specific wavelength upon de-excitation. Furthermore, real-time plasma spectral data of the etched metal is acquired based on the collected real-time emitted light to monitor the type and residual amount of the etched metal at the current scanning spot in real time. This allows for the determination of the etching endpoint of the target laser beam L1 at the scanning spot, thereby improving the etching accuracy of the target laser beam L1 at the scanning spot and enhancing the performance of the semiconductor device.

[0080] In some embodiments, determining whether to stop etching the metal layer 402 at the scanning spot using the target laser beam L1 based on real-time plasma spectral data includes:

[0081] Based on real-time plasma spectral data, the characteristic wavelength data of the etched metal element and the corresponding real-time intensity data are determined.

[0082] The relative intensity coefficient is determined based on real-time intensity data and the corresponding initial intensity data.

[0083] When the relative intensity coefficient is less than or equal to the relative intensity threshold, the laser emitting device 10 is controlled to stop using the target laser beam L1 to etch the metal layer 402 at the scanning spot.

[0084] When the relative intensity coefficient is greater than the relative intensity threshold, the laser emitting device 10 is controlled to use the target laser beam L1 to continue etching the metal layer 402 at the scanning spot.

[0085] In summary, in the semiconductor device manufacturing method and system of this application embodiment, the laser emitting device uses a target laser beam to form a scanning spot on a metal layer on a substrate to etch the metal layer. High temperatures are generated when the target laser beam interacts with the metal surface at the scanning spot. These high temperatures cause the metal at the scanning spot to evaporate and ionize, forming plasma. The plasma emits light of a specific wavelength upon de-excitation. A light acquisition device collects the real-time emitted light generated by the de-excitation of the metal layer at the scanning spot after ionization, and generates real-time plasma spectral data of the etched metal at the scanning spot based on the real-time emitted light. A controller is coupled to the laser emitting device and the light acquisition device, used to acquire real-time plasma spectral data from the light acquisition device, and based on the real-time plasma spectral data, control whether the laser emitting device stops using the target laser beam to etch the metal layer at the scanning spot. Therefore, real-time plasma spectral data of the etched metal can be obtained based on the real-time emitted light collected during the etching process of the target laser beam. This allows for real-time monitoring of the type and amount of metal being etched at the current scanning spot, thereby determining the etching endpoint of the target laser beam at the scanning spot. This improves the etching accuracy of the target laser beam at the scanning spot and enhances the performance of semiconductor devices.

[0086] The above description of the embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application; those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A manufacturing system of a semiconductor device, characterized by comprising: The application relates to a laser etching device and a method thereof. The laser etching device comprises: a laser emitter configured to emit an initial laser beam; a beam control assembly configured to adjust the initial laser beam to form a target laser beam.

2. The system for manufacturing a semiconductor device according to Claim 1, wherein The beam control assembly comprises a spot shaping element configured to shape a spot of the initial laser beam so that a spot shape of the target laser beam is shaped as a ring. The method comprises: emitting an initial laser beam; adjusting the initial laser beam to form a target laser beam; and controlling the target laser beam to form a scanning spot on a metal layer on a substrate.

3. The system for manufacturing a semiconductor device according to Claim 2, wherein The method further comprises:

4. The system for manufacturing a semiconductor device according to Claim 1, wherein acquiring characteristic values of the metal layer on the substrate and characteristic values of the substrate; acquiring a target pattern representing the metal layer after being etched, and determining a target etching path of the metal layer etched by the target laser beam based on the target pattern; determining parameters of the target laser beam based on the characteristic values of the metal layer, the characteristic values of the substrate, and the target etching path. The parameters of the target laser beam comprise an energy density, the energy density being greater than or equal to a first preset energy density and less than a second preset energy density; wherein the first preset energy density represents a minimum energy density at which the metal layer is ablated by a laser beam, and the second preset energy density represents a minimum energy density at which the substrate is damaged by a laser beam.

5. The system for manufacturing a semiconductor device according to Claim 4, wherein The laser emitter is configured to emit an initial laser beam.

6. The system for manufacturing a semiconductor device according to Claim 1, wherein The beam control assembly is configured to adjust the initial laser beam to form a target laser beam. The beam control assembly comprises a spot shaping element configured to shape a spot of the initial laser beam so that a spot shape of the target laser beam is shaped as a ring. ​ 7. The system for manufacturing a semiconductor device according to Claim 6, wherein ​ 8. The system for manufacturing a semiconductor device according to Claim 7, wherein The light beam control assembly comprises a spatial light modulator configured to adjust the initial laser beam to adjust at least one of a phase and an amplitude of the target laser beam before the spot shaping element shapes a spot of the initial laser beam.

9. A method of manufacturing a semiconductor device, characterized by The method comprises the following steps: The laser emitting device forms a scanning spot on the metal layer on the substrate by using the target laser beam to etch the metal layer; The light collecting device collects real-time emission light generated by the etched metal layer at the scanning spot in a plasma state according to a preset collection frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light; The controller obtains the real-time plasma spectrum data from the light collecting device, and controls whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data.

10. The method of manufacturing a semiconductor device according to Claim 9, wherein The control of whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data comprises: determining characteristic wavelength data of the etched metal element and real-time intensity data corresponding to the characteristic wavelength data based on the real-time plasma spectrum data; determining a relative intensity coefficient based on the real-time intensity data and starting intensity data corresponding to the real-time intensity data; when the relative intensity coefficient is less than or equal to a relative intensity threshold value, controlling the laser emitting device to stop etching the metal layer at the scanning spot by using the target laser beam; when the relative intensity coefficient is greater than the relative intensity threshold value, controlling the laser emitting device to continue etching the metal layer at the scanning spot by using the target laser beam.

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