Electrostatic chuck heater and manufacturing method thereof

Abstract

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater main body part provided with an internal electrode and an external electrode that selectively perform any one of an RF ground function and an electrostatic chuck function according to a semiconductor process mode; and the heater supporting part is additionally arranged at the lower part of the heater main body part and is used for supporting the heater main body part.

Description

[0001] This application is a divisional application of patent application No. 2020800531803, filed on June 23, 2020, entitled "Electrostatic Chuck Heater and Manufacturing Method Thereof". Technical Field

[0002] This invention relates to an electrostatic chuck heater and its manufacturing method, and more specifically, to an electrostatic chuck heater having a bipolar structure and its manufacturing method. Background Technology

[0003] Generally, semiconductor devices or display devices are manufactured by patterning multiple thin film layers, including dielectric and metal layers, sequentially stacked on a glass substrate, flexible substrate, or semiconductor wafer substrate. These thin film layers are sequentially deposited on the substrate using chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. The CVD processes include low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), and metal-organic chemical vapor deposition (MOCVD), among others.

[0004] These CVD and PVD apparatuses are equipped with heaters for supporting glass substrates, flexible substrates, semiconductor wafer substrates, etc., and applying predetermined heat. These heaters are also used for substrate heating in processes such as etching of thin film layers formed on the substrate and firing of photoresist. The heaters used in these CVD and PVD apparatuses widely employ ceramic heaters to meet the requirements for precise temperature control, refined semiconductor device wiring, and precision heat treatment of semiconductor wafer substrates.

[0005] Figure 1 This is a diagram illustrating the configuration of a ceramic heater according to the prior art. (See diagram for example.) Figure 1 As shown, the ceramic heater 1 can be used in semiconductor manufacturing processes to support a substrate such as a wafer and heat the substrate to a process temperature, for example, the temperature required to perform a CVD or PVD process.

[0006] The ceramic heater 1 is composed of a ceramic body 10 having a circular plate shape and a ceramic support 20 attached to the lower portion of the ceramic body 10. The ceramic body 10 includes a ground electrode 11 for discharging the current charged in the ceramic heater 1 to the ground when plasma is generated, and a heating body 13 for generating heat energy for heating a substrate. The ceramic support 20 includes a ground rod 21 for connecting the ground electrode 11 to the ground, and a heating body rod 23 for connecting the heating body 13 to an external power source (not shown).

[0007] In order to stably attach the wafer, a pocket corresponding to the size of the wafer can be formed in the upper portion of the ceramic body 10. However, the ceramic heater having the pocket structure can cause a problem of reducing deposition uniformity of the wafer edge when a process gas flows toward the wafer, and a vortex of the gas flow is generated through the space 30 formed between the upper surface of the ceramic body 10 and the edge of the wafer. SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] An object of the present application is to solve the problems and other problems as described above. Another object is to provide an electrostatic chuck heater having improved reliability and a manufacturing method thereof.

[0010] Another object is to provide an electrostatic chuck heater having a bipolar structure and a manufacturing method thereof.

[0011] Another object is to provide an electrostatic chuck heater capable of selectively performing the functions of an internal electrode and an external electrode according to a semiconductor process mode and a manufacturing method thereof.

[0012] SOLUTION TO PROBLEM

[0013] In order to achieve the other object, according to one aspect of the present application, there is provided an electrostatic chuck heater including a heater body portion having an internal electrode and an external electrode selectively performing any one of an RF ground function and an electrostatic chuck function according to a semiconductor process mode, and a heater support portion attached to the lower portion of the heater body portion to support the heater body portion. The internal electrode can be embedded in the central portion of the upper portion of the heater body portion.

[0014] The external electrode can be formed on the same plane as the internal electrode. Also, the external electrode can be disposed at a predetermined distance apart from the internal electrode. Also, the external electrode can be disposed in a manner of surrounding the internal electrode.

[0015] More preferably, the heater main body part can further include an external electrode connection member disposed between the electrode layer and the heat generating body layer to electrically connect the external electrode with a rod (ROD) provided at the heater support part. Also, the external electrode connection member can be disposed at a predetermined distance apart from the lower surface of the internal electrode and the external electrode in parallel with the respective electrodes. Also, both ends of the external electrode connection member can be perpendicularly bent toward the lower surface of the external electrode.

[0016] More preferably, the internal electrode, the external electrode, and the external electrode connection member can be formed in any one of a sheet type (SHEET TYPE), a mesh type (MESH TYPE), and a paste type (PASTE TYPE). Also, the internal electrode, the external electrode, and the external electrode connection member can be formed of molybdenum (Mo) having excellent electrical conductivity.

[0017] More preferably, the electrostatic chuck heater can further include a bipolar function selection part electrically connected with the internal electrode and the external electrode embedded in the heater main body part to select the functions of the internal electrode and the external electrode. Herein, the bipolar function selection part can include an internal electrode function selection part to select the function of the internal electrode, and an external electrode function selection part to select the function of the external electrode. Also, the internal electrode function selection part can include a first capacitor C1, a first switch S1, and a first DC power supply part to supply a positive DC voltage V1, and the external electrode function selection part can include a second capacitor C2, a second switch S2, and a second DC power supply part to supply a negative DC voltage V2.

[0018] More preferably, the bipolar function selection part can select the functions of the respective electrodes so that at least one of the internal electrode and the external electrode performs a radio frequency ground function in a first semiconductor process mode. Also, the bipolar function selection part can select the functions of the respective electrodes so that both of the internal electrode and the external electrode perform an electrostatic chuck function in a second semiconductor process mode.

[0019] According to another aspect of the present application, there is provided a method of manufacturing an electrostatic chuck heater, including: a step of filling a first ceramic powder into a molding mold to form a first ceramic powder layer; a step of laminating a ceramic molding body, in which an internal electrode, an external electrode spaced apart from the internal electrode by a predetermined distance on the same plane as the internal electrode, and an external electrode connecting member in contact with the external electrode are embedded, on the first ceramic powder layer; a step of filling a second ceramic powder into an upper portion of the ceramic molding body to form a second ceramic powder layer; and a step of sintering a ceramic powder layer structure including the ceramic molding body at a predetermined pressure and temperature to form a heater main body portion. The method of manufacturing an electrostatic chuck heater can further include a step of laminating a heating element on an upper portion of the second ceramic powder layer, and a step of filling a third ceramic powder into an upper portion of the heating element to form a third ceramic powder layer.

[0020] More preferably, the method of manufacturing a ceramic molding body can further include a step of forming a groove of a predetermined shape on an upper portion of a ceramic powder layer using a jig, a step of inserting a first external electrode into the groove formed on the upper portion of the ceramic powder layer and filling a ceramic powder on an upper portion of the first external electrode, and a step of compression sintering the ceramic powder layer in which the first external electrode is embedded to form a ceramic plate. In addition, the method of manufacturing a ceramic molding body can further include a step of forming an external electrode connecting member between the first external electrodes exposed on a lower portion of the ceramic plate using a screen printer.

[0021] More preferably, the method of manufacturing a ceramic molding body can further include a step of processing both surfaces of the ceramic plate to expose the first external electrode to the outside, and a step of inserting a second external electrode. The second external electrode can be disposed on an upper portion of the first external electrode to form one external electrode in combination with the first external electrode.

[0022] Effects of the Invention

[0023] According to at least one embodiment of the present application, by providing an internal electrode and an external electrode capable of selectively performing either one of an RF ground function and an electrostatic chuck function according to a semiconductor process mode, there is an advantage that temperature uniformity and deposition uniformity of a heat treatment object such as a wafer, etc. disposed on an upper portion of a heater main body portion can be improved.

[0024] In addition, according to at least one embodiment of the present application, in the process of manufacturing the heater main body, it is not necessary to insert the external electrode connecting member into the through hole of the ceramic plate, nor to bend the both ends of the external electrode connecting member in the direction parallel to the ground, thus having the advantages of improving the reliability of the electrostatic chuck heater product and the convenience of operation.

[0025] However, the effects that can be achieved by the electrostatic chuck heater and the manufacturing method thereof according to the embodiments of the present application are not limited to the above-mentioned contents, and other effects not mentioned can be clearly understood by those skilled in the art to which the present application pertains from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a diagram showing the configuration of a ceramic heater according to the prior art;

[0027] Figure 2 is a perspective view showing the external shape of an electrostatic chuck heater according to an embodiment of the present application;

[0028] Figure 3 is a sectional view showing the configuration of an electrostatic chuck heater according to an embodiment of the present application;

[0029] Figure 4 is a diagram showing the configuration of a bipolar function selection section included in the electrostatic chuck heater of Figure 3 ;

[0030] Figure 5 is a diagram showing a graph of the results of measuring the edge temperature of a ceramic heater according to the prior art and an electrostatic chuck heater according to the present embodiment;

[0031] Figure 6 is a diagram showing the results of measuring the temperature variation range of the edge of a wafer according to the internal / external electrode function and size of an electrostatic chuck heater according to the present embodiment;

[0032] Figure 7 is a sequence diagram illustrating the manufacturing method of the heater main body constituting the electrostatic chuck heater of Figure 3 ;

[0033] Figure 8 is a diagram referred to for explaining the manufacturing method of the heater main body constituting the electrostatic chuck heater of Figure 3 ;

[0034] Figure 9 is a diagram illustrating the manufacturing method of a ceramic molded body according to an embodiment of the present application;

[0035] Figures 10a to 10e is a diagram illustrating the manufacturing method of a ceramic molded body according to another embodiment of the present application;

[0036] Figure 11 is a schematic view showing another shape of an external electrode connecting member embedded in a ceramic shaped body of Figure 10e DETAILED DESCRIPTION

[0037] The embodiments disclosed in this specification are explained in detail below with reference to the drawings, and the same or like constituent elements are given the same reference characters regardless of the figure number, and repeated explanation thereof is omitted. Hereinafter, in explaining the embodiments according to the present application, in the case where it is written that each layer (film), region, pattern, or structure is formed "on" or "under" a substrate, each layer (film), region, pad, or pattern, "on" and "under" include "directly" or "indirectly with other layers" formed. In addition, the reference of the upper or lower of each layer is explained based on the figure. The thickness or size of each layer in the figure is exaggerated or omitted or simply shown for convenience and clarity of explanation. In addition, the size of each constituent element does not reflect the actual size in its entirety.

[0038] In addition, in explaining the embodiments disclosed in this specification, when it is judged that a specific explanation of the related art technology can unnecessarily confuse the gist of the embodiments disclosed in this specification, the detailed explanation thereof is omitted. In addition, the figure is used only to make it easier to understand the embodiments disclosed in this specification, and the technical idea disclosed in this specification is not limited by the figure, and it is understood that it includes all modifications, equivalents, and alternatives within the idea and technical scope of the present application.

[0039] The present application provides an electrostatic chuck heater with improved reliability and a manufacturing method thereof. In addition, the present application proposes an electrostatic chuck heater having a bipolar structure and a manufacturing method thereof. In addition, the present application proposes an electrostatic chuck heater in which the functions of an internal electrode and an external electrode can be adaptively selected according to a semiconductor process mode and a manufacturing method thereof.

[0040] The various embodiments of the present application are explained in detail below with reference to the drawings.

[0041] Figure 2 is a perspective view showing the external shape of an electrostatic chuck heater according to an embodiment of the present application, Figure 3 is a sectional view showing the constitution of an electrostatic chuck heater according to an embodiment of the present application, Figure 4 is a schematic view showing another shape of an external electrode connecting member embedded in a ceramic shaped body of Figure 3 the electrostatic chuck heater of

[0042] Referring to Figures 2 to 4 ​According to an embodiment of the present application, the electrostatic chuck heater 100 is a semiconductor device that simultaneously provides a heat treatment function of heating a heat treatment object such as a semiconductor wafer, a glass substrate, a flexible substrate, or the like to a predetermined temperature and an electrostatic chuck function of tightly attaching the heat treatment object to an upper surface of the corresponding heater 100.

[0043] The electrostatic chuck heater 100 can include a heater body portion 110 that transmits heat while stably supporting a heat treatment object (not shown), a heater support portion 120 attached to a lower portion of the heater body portion 110, and a bipolar function selection portion 130 electrically connected to the heater body portion 110. The bipolar function selection portion 130 can be integrally formed with the electrostatic chuck heater 100 or formed separately from the electrostatic chuck heater 100.

[0044] The heater body portion 110 can be formed in a plate-shaped structure having a predetermined shape. As an example, the heater body portion 110 can be formed in a circular plate-shaped structure, but is not necessarily limited thereto.

[0045] A pocket region (or a cavity region) 111 having a structure recessed by a predetermined step difference can be formed in an upper portion of the heater body portion 110, so that a heat treatment object such as a wafer can be stably attached. An upper surface of the heater body portion 110 corresponding to the pocket region can be formed to have excellent flatness. This is to horizontally arrange the heat treatment object disposed in a chamber without tilting to one side direction.

[0046] The heater body portion 110 can be composed of a plurality of ceramic plates (not shown) formed by performing a compression sintering process with respect to the plurality of ceramic plates formed of a ceramic material having excellent thermal conductivity. The ceramic material can be any one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BN, SiO2, SiC, YAG, Mullite, AlF3, and more preferably, can be aluminum nitride (AlN). x C y

[0047] ​The heater main body 110 can include an inner electrode 112, an outer electrode 113 surrounding the inner electrode 112, an outer electrode connecting member 114 under the electrodes 112 and 113, a heating body 115 under the outer electrode connecting member 114, and first to third rod connecting members 116 to 118.

[0048] The inner electrode 112 can be disposed at the center of the upper portion of the heater main body 110, and formed in a circular plate shape. The inner electrode 112 can be disposed inside the outer electrode 113.

[0049] The inner electrode 112 can be formed in any one of a mesh type, a sheet type, and a paste type, and more preferably, can be formed in a mesh type. In addition, the inner electrode 112 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or an alloy thereof, and more preferably, can be formed of molybdenum (Mo).

[0050] The thickness of the inner electrode 112 can be 0.1㎜ to 0.5㎜, and more preferably, can be 0.2㎜. In addition, the diameter of the inner electrode 112 can be 280㎜ to 290㎜, and more preferably, can be 285㎜.

[0051] Such an inner electrode 112 can selectively perform any one of a radio frequency (RF) grounding function and an electrostatic chuck function. The RF grounding function is a function of discharging electric current charged in the heater main body 110 due to plasma inside a chamber to an external ground when a wafer deposition process is performed, and the electrostatic chuck function is a function of making a heat treatment object such as a wafer adhere to the upper portion of the heater main body 110 using an electric field.

[0052] The outer electrode 113 is disposed at the upper edge of the heater main body 110, and can be formed in a ring shape. The outer electrode 113 can be formed on the same plane as the inner electrode 112. In addition, the outer electrode 113 can be formed to surround the inner electrode 112 at a predetermined distance from the inner electrode 112.

[0053] The external electrode 113 can be formed in any one of a mesh type, a sheet type, and a paste type, and more preferably, can be formed in a mesh type. In addition, the external electrode 113 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or an alloy thereof, and more preferably, can be formed of molybdenum (Mo).

[0054] The thickness of the external electrode 113 can be 0.1㎜ to 0.5㎜, and more preferably, can be 0.2㎜. In addition, the inner diameter / outer diameter of the external electrode 113 can be 280㎜ / 320㎜ to 300㎜ / 320㎜, and more preferably, can be 290㎜ / 320㎜.

[0055] The external electrode 113 can selectively perform any one of an RF ground function and an electrostatic chuck function. Likewise, the RF ground function is a function of discharging electric current charged in the heater main body 110 due to plasma inside a chamber to an external ground when a wafer deposition process is performed, and the electrostatic chuck function is a function of making a heat treatment object such as a wafer adhere to the upper surface of the heater main body 110 using an electric field.

[0056] On the other hand, the external electrode 113 has a problem in that it is difficult to be directly connected to a second rod (ROD) 122 formed in a central portion of the heater main body 110 because it is formed on the same plane as the internal electrode 112 and is formed to be spaced apart from the internal electrode 112 by a predetermined distance. In order to solve this problem, the external electrode connection member 114 can be embedded in the heater main body 110.

[0057] The external electrode connection member 114 is disposed between the electrode layer and the heat generating body layer, and performs a function of electrically connecting the external electrode 113 and the second rod 122. That is, the second rod 122 located in the central portion of the heater main body 110 and the external electrode 113 located in the edge portion of the heater main body 110 can be electrically connected by the external electrode connection member 114. Accordingly, the first to third rods 121 to 123 of the internal electrode 112, the external electrode 113, and the heat generating body 115 embedded in the heater main body 110 can be located together in the middle portion of the heater support 120.

[0058] The external electrode connecting member 114 can be formed to extend in a horizontal direction between the electrode layer and the heat generating body layer of the heater main body 110. In addition, the external electrode connecting member 114 can be spaced apart from the lower surfaces of the internal electrode 112 and the external electrode 113 by a predetermined distance and arranged in parallel with the respective electrodes 112 and 113. The external electrode connecting member 114 can be formed in a long and narrow plate shape. Both ends of the external electrode connecting member 114 can be formed to be vertically bent in an upward direction. This is to make both ends of the external electrode connecting member 114 contact the lower surface of the external electrode 113.

[0059] The external electrode connecting member 114 can be formed in any one of a mesh type, a sheet type, and a paste type, and more preferably, can be formed in a sheet type. In addition, the external electrode connecting member 114 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AIN), or an alloy thereof, and more preferably, can be formed of molybdenum (Mo).

[0060] The heat generating body 115 can be arranged at a lower central portion of the heater main body 110 and formed in a shape corresponding to the shape of the heat treatment target. The heat generating body 115 can be arranged below the external electrode connecting member 114 and spaced apart from the internal and external electrodes 112 and 113 by a predetermined distance.

[0061] The heat generating body 115 can be embedded in the heater main body 110 corresponding to the position of the heat treatment target. In addition, in order to uniformly heat the heat treatment target as a whole, the heat generating body 115 can be embedded in the heater main body 110 in parallel with the heat treatment target so that not only the heating temperature can be uniformly controlled according to the position, but also the distance of heat transfer to the heat treatment target is maintained at a predetermined distance at almost all positions.

[0062] The heat generating body 115 can be formed in a plate-shaped coil shape based on a heat generating wire (resistance wire) or a flat plate shape. In addition, the heat generating body 115 can be formed in a multi-layer structure in order to precisely control the temperature.

[0063] The heat generating body 115 performs a function of heating the heat treatment target located at the upper surface of the heater main body 110 to a predetermined temperature in order to smoothly perform a deposition process and an etching process in a semiconductor manufacturing process.

[0064] The first rod connecting member 116 is disposed on a central lower surface of the inner electrode 112, and functions to electrically connect the inner electrode 112 to the first rod 121. The second rod connecting member 117 is disposed on a central lower surface of the outer electrode connecting member 114, and functions to electrically connect the outer electrode 113 to the second rod 122. The third rod connecting member 118 is disposed on a central lower surface of the heat generating body 115, and functions to electrically connect the heat generating body 115 to the third rod 123.

[0065] The heater support part 120 is attached to a lower portion of the heater main part 110, and functions to support the heater main part 110. Thus, the heater support part 120 is combined with the heater main part 110 to form the electrostatic chuck heater 100 having a T shape.

[0066] The heater support part 120 can be formed in a tube shape having an empty space inside. This is to provide the plurality of rods 121-123 connected to the inner electrode 112, the outer electrode 113, and the heat generating body 115 of the heater main part 110 through the heater support part 120.

[0067] The heater support part 120 can be formed of the same ceramic material as the heater main part 110. As one example, the heater support part 120 can be formed of any one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BN, SiO2, SiC, YAG, Mullite, AlF3, and more preferably, can be formed of aluminum nitride (AlN). x C y

[0068] The first rod 121 can be disposed inside the heater support part 120, connecting between the first rod connecting member 116 and the bipolar function selection part 130. Thus, the bipolar function selection part 130 can be electrically connected to the inner electrode 112 through the first rod 121.

[0069] The second rod 122 can be disposed inside the heater support part 120, connecting between the second rod connecting member 117 and the bipolar function selection part 130. Thus, the bipolar function selection part 130 can be electrically connected to the outer electrode 113 through the second rod 122.

[0070] ​The third rod 123 is disposed inside the heater support 120 and connects the third rod connecting member 118 to the external power supply device (not shown). Therefore, the external power supply device can be electrically connected to the heating element 115 through the third rod 123.

[0071] The first to third rods 121-123 can be formed of a metallic material with excellent electrical conductivity. As an example, the first to third rods 121-123 can be formed of copper (Cu), aluminum (Al), iron (Fe), tungsten (W), nickel (Ni), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), or alloys thereof, and more preferably, can be formed of nickel (Ni).

[0072] The bipolar function selection unit 130 can be electrically connected to the internal electrode 112 and the external electrode 113 via the first and second rods 121 and 122, and adaptively selects the function of the internal electrode 112 and the external electrode 113 according to the semiconductor process mode. That is, the bipolar function selection unit 130 can select the function of the corresponding electrode 112 and 113 according to the semiconductor process mode, so that the internal electrode 112 and the external electrode 113 perform either the RF grounding function or the electrostatic chuck function.

[0073] As an example, such as Figure 4 As shown, the bipolar function selection unit 130 may be composed of an internal electrode function selection unit 410 that selects the function of the internal electrode 112 according to the control command of the semiconductor process system (not shown) and an external electrode function selection unit 420 that selects the function of the external electrode 113.

[0074] The internal electrode function selection unit 410 can be electrically connected to the internal electrode 112 via the first rod 121, and includes a first capacitor C1, 411, a first switch S1, 412, and a first direct current (DC) power supply V1, 413. The first capacitor 411 can be connected in parallel with the first switch 412 and the first DC power supply 413, with the first node N1 as a reference. The first switch 412 and the first DC power supply 413 can be connected in series between the first node and ground. Furthermore, the first DC power supply 413 can provide a preset positive direct current (DC) voltage.

[0075] According to the control signal of the semiconductor process system, after the first switch 412 is turned off, the internal electrode 112 of the electrostatic chuck heater 100 is connected to the first capacitor 411. In the radio frequency (RF) operating mode, the first capacitor 411 is turned short, so the internal electrode 112 is connected to the external ground and performs the RF grounding function.

[0076] On the other hand, according to the control signal of the semiconductor process system, the first switch 412 becomes the on state, and the inner electrode 112 of the electrostatic chuck heater 100 is connected to the first DC power supply 413. Therefore, the inner electrode 112 performs the electrostatic chuck function based on the positive DC voltage accessed from the first DC power supply 413.

[0077] The outer electrode function selection part 420 can be electrically connected to the outer electrode 113 through the second rod 122, and includes a second capacitor C2, 421, a second switch S2, 422, and a second DC power supply V2, 423. The second capacitor 421 can be connected in parallel to the second switch 422 and the second DC power supply 423 with the second node N2 as a reference. The second switch 422 and the second DC power supply 423 can be connected in series between the second node and the ground. Moreover, the second DC power supply 423 can provide a preset negative DC voltage.

[0078] According to the control signal of the semiconductor process system, the second switch 422 becomes the off state, and the outer electrode 113 of the electrostatic chuck heater 100 is connected to the second capacitor 421. The second capacitor 421 becomes the short state in the radio frequency (RF) operation mode, so that the outer electrode 113 is connected to the outer ground and performs the RF grounding function.

[0079] On the other hand, according to the control signal of the semiconductor process system, the second switch 422 becomes the on state, and the outer electrode 113 of the electrostatic chuck heater 100 is connected to the second DC power supply 423. Therefore, the outer electrode 113 performs the electrostatic chuck function based on the negative DC voltage accessed from the second DC power supply 423.

[0080]

Table 1

[0081]

[0082] As shown in Table 1 above, the bipolar function selection part 130 can adaptively select the function of the corresponding electrode according to the switching mode of the switch 1 and the switch 2, so that the inner electrode and the outer electrode operate in any one of the RF grounding function and the electrostatic chuck function.

[0083] For example, in the semiconductor process mode using plasma (the first semiconductor process mode), the bipolar function selection part 130 can select the function of the corresponding electrode 112, 113 so that at least one of the inner electrode 112 and the outer electrode 113 performs the RF grounding function. On the other hand, in the semiconductor process mode without using plasma (the second semiconductor process mode), the bipolar function selection part 130 can select the function of the corresponding electrode 112, 113 so as to access DC voltages with mutually different polarities to the inner electrode 112 and the outer electrode 113, and make the corresponding electrodes both perform the electrostatic chuck function.

[0084] According to the electrostatic chuck heater 100 of this embodiment, a heat-treated object, such as a wafer, is divided into portions with good deposition uniformity (e.g., the central portion of the wafer) and portions with poor deposition uniformity (e.g., the edge portion of the wafer). Electrodes with RF grounding function are formed in the portions with good deposition uniformity, and electrodes with electrostatic chuck function are formed in the portions with poor deposition uniformity. This allows the charged heat-treated object, such as a wafer, to be fixed to the upper surface of the heater body. As a result, the contact area between the heat-treated object, such as a wafer, and the heater body is increased, and the conductivity is improved, thus improving the temperature uniformity and deposition uniformity of the respective heat-treated object.

[0085] As described above, an electrostatic chuck heater according to an embodiment of the present invention has internal and external electrodes that can selectively perform either an RF grounding function or an electrostatic chuck function according to a semiconductor process mode, thereby improving the temperature uniformity and deposition uniformity of heat-processed objects such as wafers disposed on the upper surface of the heater body.

[0086] Figure 5 This is a graph showing the measurement of the edge temperature of a ceramic heater according to the prior art and an electrostatic chuck heater according to this embodiment.

[0087] like Figure 5 As shown, to test the effectiveness of the present invention, the temperature at eight locations on the edge of the heater was measured using a T / C wafer and compared. The temperature of each heater was set to approximately 550°C. According to the prior art, the grounding electrode of the ceramic heater uses a MESH TYPE (24 mesh) electrode with a diameter of 320 mm. Furthermore, according to this embodiment, the internal electrode (i.e., the grounding electrode) of the electrostatic chuck heater used a MESH TYPE (24 mesh) electrode with a diameter of 285 mm, and the external electrode (i.e., the electrostatic chuck electrode) used an annular MESH TYPE (24 mesh) electrode with an inner / outer diameter of 290 mm / 320 mm.

[0088] According to the experimental results, the temperature range of the ceramic heater according to the prior art was about 7.5°C, and the temperature range of the electrostatic chuck heater according to the present embodiment was about 2.7°C. That is, it can be confirmed that the temperature variation range of the heater edge of the electrostatic chuck heater according to the present embodiment is greatly reduced to about 36% compared to the ceramic heater according to the prior art. Therefore, the electrostatic chuck heater according to the present embodiment has a great effect of greatly improving the temperature uniformity of a heat treatment object such as a wafer, etc. compared to the ceramic heater according to the prior art, and thus has a great effect of greatly improving the deposition uniformity of the corresponding heat treatment object.

[0089] Figure 6 FIG. 2 is a graph showing the results of measuring the temperature variation range of the wafer edge according to the functions and sizes of the inner electrode and the outer electrode of the electrostatic chuck heater according to the present embodiment.

[0090] As Figure 6 shown in the present experiment, the inner electrode was set to perform the RF ground function, and the outer electrode selectively performed the electrostatic chuck function and the RF ground function. Also, the inner electrode was experimented using the MESH TYPE (24 mesh) with a diameter of 275 mm, 280 mm, and 285 mm. The outer electrode was experimented using the MESH TYPE (24 mesh) with a ring shape, and the inner diameter / outer diameter was 280 mm / 320 mm, 285 mm / 320 mm, and 290 mm / 320 mm.

[0091] According to the experimental results, it was confirmed that the temperature variation range of the wafer edge had the smallest amplitude when the diameter of the inner electrode was 285 mm and the inner diameter / outer diameter of the outer electrode was 290 mm / 320 mm. Also, it can be confirmed that the temperature variation range of the wafer edge is small when the outer electrode performs the electrostatic chuck function compared to when the outer electrode performs the RF ground function. Therefore, it can be confirmed that the functions set in the inner and outer electrodes and the diameters of the corresponding electrodes are closely related to the wafer deposition uniformity and the temperature uniformity as the performance of the electrostatic chuck heater.

[0092] Figure 7 FIG. 1 is a sequential diagram illustrating a manufacturing method of a heater main body part of an electrostatic chuck heater according to the present embodiment, Figure 3 FIG. 2 is a graph showing the results of measuring the temperature variation range of the wafer edge according to the functions and sizes of the inner electrode and the outer electrode of the electrostatic chuck heater according to the present embodiment. Figure 8 FIG. 3 is a graph showing the results of measuring the temperature variation range of the wafer edge according to the functions and sizes of the inner electrode and the outer electrode of the electrostatic chuck heater according to the present embodiment. Figure 3 Referring to

[0093] FIG. 1 and FIG. 2, Figure 7 and Figure 8A molding die (or a receiving die) 710 corresponding to the overall shape of the heater main body portion constituting the electrostatic chuck heater 100 according to an embodiment of the present application and a pressurizing die 720 to apply pressure to ceramic powder filled in the molding die 710 can be prepared (S710).

[0094] A first ceramic powder layer 810 can be formed by filling the first ceramic powder in the molding die 710 (S720). A ceramic molded body 820 in which an internal electrode (not shown), an external electrode (not shown), and an external electrode connecting member (not shown) are embedded can be pre-processed and stacked on an upper portion of the first ceramic powder layer 810 in the molding die 710 (S730). At this time, the ceramic molded body 820 can be in a molded body shape capable of maintaining the shape by applying a predetermined pressure.

[0095] Then, a second ceramic powder layer 830 can be formed by filling the second ceramic powder in the molding die 710 on an upper portion of the ceramic molded body 820 (S740). Then, a heating element 840 having a plate shape of a spiral shape or a mesh shape can be pre-processed and stacked on an upper portion of the second ceramic powder layer 830 (S750).

[0096] Then, a third ceramic powder layer 850 can be formed by filling the third ceramic powder in the molding die 710 on an upper portion of the heating element 840 (S760). The first to third ceramic powders can include aluminum nitride (AlN) powder, and optionally, can include about 0.1% to 10% or so of aluminum oxide powder, and more preferably, can include about 1% to 5% or so of aluminum oxide powder.

[0097] After the first ceramic powder layer 810, the ceramic molded body 820, the second ceramic powder layer 830, the heating element 840, and the third ceramic powder layer 850 are sequentially stacked, heat at a high temperature is provided while a predetermined pressure is applied using the pressurizing die 720, so that the ceramic powder layers can be sintered to form the heater main body portion 800 (S770). As one example, the heater main body portion 800 can be compression-sintered at a pressure of about 0.01 tons / cm 2 to 0.3 tons / cm 2 and a temperature of about 1600°C to 1950°C or so.

[0098] Hereinafter, a manufacturing method of the ceramic molded body 820 which can selectively perform an RF grounding function and an electrostatic chuck function among the elements constituting the heater main body portion 800 as described above will be described in detail.

[0099] Figure 9 is a view illustrating a manufacturing method of a ceramic molded body according to an embodiment of the present application.

[0100] Referring to Figure 9A molding mold (not shown) corresponding to the overall shape of the ceramic molding body 900 can be prepared. After the ceramic powder is filled in the molding mold (not shown), the ceramic powder can be sintered at a predetermined temperature and pressure to form the ceramic plate 910. Also, the upper portion of the ceramic plate 910 can be processed to form a first groove in which the first rod connecting member 930 is to be embedded, a second groove in which the internal electrode 950 is to be embedded, and a third groove in which the external electrode 960 is to be embedded. In addition, the edge portion of the ceramic plate 910 can be processed to form a through-hole in which the external electrode connecting member 920 is to be embedded.

[0101] Then, the external electrode connecting member 920 can be inserted into the ceramic plate 910 in which the plurality of grooves are processed. At this time, the external electrode connecting member 920 can be bent at both ends thereof in a horizontal direction with respect to the ground so as to be parallel to the ceramic plate 910 in order to be electrically connected to the external electrode 960.

[0102] After the external electrode connecting member 920 is disposed, the first rod connecting member 930 can be inserted into the first groove formed in the upper portion of the ceramic plate 910. Also, the second rod connecting member 940 can be attached to the lower surface of the external electrode connecting member 920.

[0103] After the first and second rod connecting members 930 and 940 are disposed, the internal electrode 950 can be inserted into the second groove formed in the upper portion of the ceramic plate 910, and the external electrode 960 can be inserted into the third groove formed in the upper portion of the ceramic plate 910. Thus, the internal electrode 950 can be electrically connected to the first rod connecting member 930, and the external electrode 960 can be electrically connected to the second rod connecting member 940 through the external electrode connecting member 920.

[0104] The external electrode connecting member 920, the internal electrode 950, and the external electrode 960 can be formed in any one of a sheet type, a mesh type, and a paste type. In addition, the external electrode connecting member 920, the internal electrode 950, and the external electrode 960 can be formed of molybdenum (Mo) having excellent electrical conductivity. In addition, the external electrode connecting member 920 can be formed in a thin and long plate shape processed into a "T" shape, the internal electrode 950 can be formed in a circular plate shape, and the external electrode 960 can be formed in a ring shape.

[0105] However, in the ceramic molded body manufacturing method described above, the bent portion of the external electrode connecting member 920 in contact with the external electrode 960 can not be properly aligned, and this can cause a problem of poor conduction between the external electrode 960 and the external electrode connecting member 920. In addition, there is a possibility that the through hole of the ceramic plate 910 can not be completely filled with the powder, and thus problems such as poor RF grounding function, poor electrostatic chuck function, and product cracks can occur. Another ceramic molded body manufacturing method capable of solving such problems will be described below.

[0106] Figures 10a to 10e FIG. 1 is a view illustrating a ceramic molded body manufacturing method according to an embodiment of the present application.

[0107] Referring to Figure 10a A molding mold 1010 corresponding to the overall shape of the ceramic molded body 1000 can be prepared. A ceramic powder layer can be formed by filling the ceramic powder 1020 to a predetermined height in the molding mold 1010. At this time, the ceramic powder 1020 can be formed of aluminum nitride (AIN), but is not necessarily limited thereto.

[0108] Then, a jig 1030 required to form a groove of a predetermined shape on the upper portion of the ceramic powder layer 1020 can be provided. The jig 1030 can be moved toward the molding mold 1010, and a first groove 1021 can be formed on the upper portion of the ceramic powder layer 1020 filled in the molding mold 1010.

[0109] Referring to Figure 10b A first external electrode 1060a having a columnar shape can be inserted into the first groove 1021 formed on the upper portion of the ceramic powder layer 1020. After the insertion of the first external electrode 1060a is completed, the ceramic powder can be additionally filled in the molding mold 1010 so as to sufficiently cover the first external electrode 1060a. The ceramic plate 1020 can be formed by sintering the ceramic powder layer filled in the molding mold 1010 at a predetermined temperature and pressure. Then, the ceramic plate 1020 can be separated from the molding mold 1010.

[0110] Referring to Figure 10c Both surfaces of the ceramic plate 1020 can be machined so as to expose the first external electrode 1060a to the outside. Also, the upper portion of the ceramic plate 1020 can be machined to form a second groove 1022 in which the first rod connecting member 1040 can be embedded, a third groove 1023 in which the internal electrode 1050 can be embedded, and a fourth groove 1024 in which the second external electrode 1060b can be embedded.

[0111] Then, the first rod connecting member 1040 can be inserted into the second groove 1022 formed in the upper portion of the ceramic plate 1020. After the insertion of the first rod connecting member 1040 is completed, the internal electrode 1050 can be inserted into the third groove 1023 formed in the upper portion of the ceramic plate 1020. Thus, the internal electrode 1050 can be electrically connected with the first rod connecting member 1040.

[0112] After the insertion of the internal electrode 1050 is completed, the second external electrode 1060b can be inserted into the fourth groove 1024 formed in the upper portion of the ceramic plate 1020. At this time, the second external electrode 1060b can be combined with the first external electrode 1060a to form one external electrode 1060. Thus, the second external electrode 1060b can be electrically connected with the first external electrode 1060a.

[0113] Referring to Figure 10d and Figure 10e The external electrode connecting member 1030 can be attached to the lower surface of the ceramic plate 1020 using a screen printer (not shown). At this time, the external electrode connecting member 1030 can be arranged in a straight line between the first external electrode 1060a exposed on the lower surface of the ceramic plate 1020. Thus, the external electrode connecting member 1030 can be electrically connected with the first external electrode 1060a and the second external electrode 1060b.

[0114] On the other hand, in the present embodiment, the case where the external electrode connecting member 1030 attached to the lower surface of the ceramic plate 1020 forms a line is shown, but it is not necessarily limited thereto. For example, as shown in Figure 11 the external electrode connecting member 1030 attached to the lower surface of the ceramic plate 1020 can be formed in two lines or four lines. In addition thereto, the external electrode connecting member 1030 can be formed in various designs.

[0115] Then, the second rod connecting member 1070 can be attached to the center of the lower surface of the external electrode connecting member 1030. Thus, the second rod connecting member 1070 can be electrically connected with the first and second external electrodes 1060a and 1060b through the external electrode connecting member 1030.

[0116] The external electrode connecting member 1030, the internal electrode 1050, and the external electrode 1060 can be formed in any one of a sheet type, a mesh type, and a paste type. In addition, the external electrode connecting member 1030, the internal electrode 1050, and the external electrode 1060 can be formed of molybdenum (Mo) having excellent conductivity. In addition, the external electrode connecting member 1030 can be formed in a long strip shape in a straight line, the internal electrode 1050 can be formed in a circular plate shape, and the external electrode 1060 can be formed in a ring shape.

[0117] As described above, the ceramic molded body manufacturing method according to another embodiment of the present application does not require insertion of the external electrode connecting member into the through hole of the ceramic plate, and does not require bending of both ends of the external electrode connecting member in a direction parallel to the ground, and thus, compared with the above-described Figure 9 ceramic molded body manufacturing method, it is possible to improve product reliability and operation convenience.

[0118] On the other hand, the above has been described with respect to specific embodiments of the present application, but it is obvious that various modifications can be made within the scope of the present application. Therefore, the scope of the present application is not limited to the described embodiments, and should be determined by the following claims and the content equivalent thereto.

Claims

1. An electrostatic chuck heater comprising: a heater main portion having an inner electrode and an outer electrode selectively performing either one of a radio frequency grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support portion attached to a lower portion of the heater main portion to support the heater main portion.

2. The electrostatic chuck heater according to claim 1, wherein the outer electrode is formed on the same plane as the inner electrode.

3. The electrostatic chuck heater according to claim 1, wherein the outer electrode is disposed at a predetermined distance apart from the inner electrode.

4. The electrostatic chuck heater according to claim 1, wherein the outer electrode is disposed in a manner surrounding the inner electrode.

5. The electrostatic chuck heater according to claim 1, wherein the inner electrode is embedded in a central portion of an upper portion of the heater main portion.

6. The electrostatic chuck heater according to claim 1, wherein the heater main portion further comprises an outer electrode connecting member disposed between an electrode layer and a heat generating body layer to electrically connect the outer electrode and a rod provided in the heater support portion.

7. The electrostatic chuck heater according to claim 6, wherein the inner electrode, the outer electrode, and the outer electrode connecting member are formed in any one of a sheet type, a mesh type, and a paste type.

8. The electrostatic chuck heater according to claim 6, wherein the inner electrode, the outer electrode, and the outer electrode connecting member are formed of molybdenum having excellent electrical conductivity.

9. The electrostatic chuck heater according to claim 6, wherein the outer electrode connecting member is disposed in parallel with the corresponding electrode at a predetermined distance apart from the lower surface of the inner electrode and the outer electrode, both ends of the outer electrode connecting member are bent perpendicularly toward the lower surface of the outer electrode.

10. The electrostatic chuck heater according to claim 1, further comprising: a bipolar function selection portion electrically connected to the inner electrode and the outer electrode embedded in the heater main portion to select the functions of the inner electrode and the outer electrode.

11. The electrostatic chuck heater according to claim 10, wherein the bipolar function selection portion comprises an inner electrode function selection portion to select the function of the inner electrode and an outer electrode function selection portion to select the function of the outer electrode.

12. The electrostatic chuck heater according to claim 11, wherein the inner electrode function selection portion comprises a first capacitor, a first switch, and a first direct current power supply portion to supply a positive direct current voltage, the outer electrode function selection portion comprises a second capacitor, a second switch, and a second direct current power supply portion to supply a negative direct current voltage.

13. The electrostatic chuck heater according to claim 10, wherein ​ ​ The bipolar function selection section selects the corresponding electrode function so that at least one of the internal electrode and the external electrode performs the radio frequency ground function when the first semiconductor process mode is selected.

14. The electrostatic chuck heater of claim 10, wherein The bipolar function selection section selects the corresponding electrode function so that both of the internal electrode and the external electrode perform the electrostatic chuck function when the second semiconductor process mode is selected.

15. A method of manufacturing an electrostatic chuck heater, comprising: a step of filling a first ceramic powder into a molding mold to form a first ceramic powder layer; a step of laminating a ceramic molding body, in which an internal electrode, an external electrode spaced apart from the internal electrode by a predetermined distance on the same plane, and an external electrode connecting member contacting the external electrode are embedded, on the first ceramic powder layer; a step of filling a second ceramic powder into an upper portion of the ceramic molding body to form a second ceramic powder layer; and a step of sintering a ceramic powder layer structure including the ceramic molding body at a predetermined pressure and temperature to form a heater main body portion.

16. The electrostatic chuck heater manufacturing method of claim 15, wherein, further comprising: a step of laminating a heating element on an upper portion of the second ceramic powder layer; and a step of filling a third ceramic powder into an upper portion of the heating element to form a third ceramic powder layer.

17. The method of manufacturing an electrostatic chuck heater according to claim 15, wherein the method of manufacturing the ceramic molding body includes: a step of forming a groove of a predetermined shape on an upper portion of a ceramic powder layer using a jig; a step of inserting a first external electrode into the groove formed on the upper portion of the ceramic powder layer and filling a ceramic powder on an upper portion of the first external electrode; and a step of compression sintering the ceramic powder layer in which the first external electrode is embedded to form a ceramic plate.

18. The method of manufacturing an electrostatic chuck heater according to claim 17, wherein the method of manufacturing the ceramic molding body further includes: a step of processing both surfaces of the ceramic plate to expose the first external electrode to the outside; a step of forming a plurality of grooves on an upper surface of the ceramic plate; and a step of inserting an internal electrode and a second external electrode into the plurality of grooves.

19. The method of manufacturing an electrostatic chuck heater according to claim 18, wherein the second external electrode is disposed on an upper portion of the first external electrode to form one external electrode in combination with the first external electrode.

20. The method of manufacturing an electrostatic chuck heater according to claim 18, wherein the method of manufacturing the ceramic molding body further includes: a step of forming an external electrode connecting member between the first external electrodes exposed on a lower surface of the ceramic plate using a screen printer.

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