Substrate surface treatment device

Abstract

The purpose of the present disclosure is to provide a substrate surface treatment device that improves the utilization efficiency of a treatment liquid mist with respect to the surface of a substrate. An exhaust mechanism (31) in this substrate surface treatment device (101) is disposed below a conveyance stage (2) that moves along a conveyance path (R2), and has an exhaust port (A31) in a region that overlaps the conveyance path (R2) in plan view. The exhaust mechanism (31) performs an exhaust process for taking in the processing liquid mist gas (22) from the exhaust port (A31) and discharging the processing liquid mist gas (22) to the outside of the surface processing chamber (51). By this exhaust treatment, a mist gas flow path (22a) is formed including a region along the surface of the substrate (1) in the vicinity of the substrate surface.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate surface processing apparatus that processes a surface of a substrate using a processing liquid mist gas. BACKGROUND

[0002] A conventional substrate surface processing apparatus that processes a surface of a substrate using a processing liquid mist gas is used for manufacturing of semiconductor devices, electronic parts, and the like, and the processing liquid mist gas contains a processing liquid mist obtained by atomizing a processing liquid.

[0003] The conventional substrate surface processing apparatus processes a surface of a substrate by supplying a processing liquid mist gas to the surface of the substrate using a mist gas supply mechanism. As the conventional substrate surface processing apparatus, for example, there is a thin film manufacturing apparatus disclosed in Patent Literature 1.

[0004] PRIOR ART DOCUMENTS PATENT LITERATURE Patent Literature 1: Japanese Patent Application Laid-Open No. 2019-72700 SUMMARY

[0005] PROBLEMS TO BE SOLVED BY THE INVENTION In the conventional substrate surface processing apparatus, a processing liquid mist is generated, for example, by applying ultrasonic vibration to a processing liquid, and the particle diameter of the processing liquid mist is 15 μm or less, which is a small particle diameter compared with a spray obtained by spray processing. Therefore, even if a processing liquid mist gas containing the processing liquid mist is supplied to the surface of the substrate, many of the processing liquid mist gases do not reach the surface of the substrate due to diffusion.

[0006] The processing liquid mist contained in the processing liquid mist gas that does not reach the surface of the substrate does not contribute to the surface processing of the substrate, and thus the utilization efficiency of the processing liquid mist decreases. The utilization efficiency of the processing liquid mist is a ratio of a mist usage amount to a mist supply amount. Here, the mist supply amount is a supply amount of the processing liquid mist contained in the processing liquid mist gas supplied by the mist gas supply mechanism, and the mist usage amount is a usage amount of the processing liquid mist used for the surface processing of the substrate.

[0007] Thus, the conventional substrate surface processing apparatus has a problem that the utilization efficiency of the processing liquid mist with respect to the surface of the substrate is not good.

[0008] An object of the present disclosure is to solve the above-described problem, and to provide a substrate surface processing apparatus that achieves an improvement in the utilization efficiency of a processing liquid mist with respect to a surface of a substrate.

[0009] MEANS FOR SOLVING THE PROBLEMS The substrate surface processing apparatus according to the present disclosure is a substrate surface processing apparatus that processes a surface of a substrate having a surface and a back surface, including: a conveyance table that places the back surface of the substrate on a placement surface and conveys the substrate by moving itself; and a mist gas supply mechanism that supplies a processing liquid mist gas toward the surface of the conveyed substrate, a region in which the conveyance table moves being defined as a conveyance path, the processing liquid mist gas including a processing liquid mist obtained by misting a processing liquid, the substrate surface processing apparatus further including: an exhaust mechanism having an exhaust port in a region overlapping the conveyance path in plan view, and performing exhaust processing of exhausting the processing liquid mist gas from the exhaust port.

[0010] Effects of Invention The exhaust mechanism of the substrate surface processing apparatus according to the present disclosure has an exhaust port in a region overlapping the conveyance path in plan view, and thus, when the exhaust processing is performed, a mist gas flow path including the processing liquid mist gas along a substrate surface vicinity region on the surface of the substrate is formed.

[0011] Therefore, the processing liquid mist gas that does not reach the surface of the substrate due to diffusion or the like flows in the substrate surface vicinity region included in the mist gas flow path, as a result of which the processing liquid mist included in the processing liquid mist gas flowing in the substrate surface vicinity region is attached to the surface of the substrate again.

[0012] As a result, the substrate surface processing apparatus according to the present disclosure can increase the amount of use of the processing liquid mist to the surface of the substrate, and thus can achieve an improvement in the utilization efficiency of the processing liquid mist with respect to the surface of the substrate.

[0013] The objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is an explanatory diagram schematically showing the overall configuration of the substrate surface processing apparatus of Embodiment 1 (one).

[0015] Figure 2 is an explanatory diagram schematically showing the overall configuration of the substrate surface processing apparatus of Embodiment 1 (two).

[0016] Figure 3 is an explanatory diagram showing the planar configuration of the substrate surface processing apparatus of Embodiment 1.

[0017] Figure 4 is an explanatory diagram schematically showing the basic configuration of the substrate surface processing apparatus of Embodiment 2 (one).

[0018] Figure 5 is an explanatory diagram schematically showing the basic configuration of the substrate surface processing apparatus of Embodiment 2 (two).

[0019] Figure 6 is a plan view showing the planar configuration of the substrate surface treatment apparatus. Figure 4 Figure 5 is a plan view showing the planar configuration of the substrate surface treatment apparatus.

[0020] Figure 7 is a table showing the fog adhesion effect of the basic configuration of the substrate surface treatment apparatus of Embodiment 2.

[0021] Figure 8 is a plan view showing the planar configuration of the conveyance table in the substrate surface treatment apparatus of the modification example of Embodiment 2.

[0022] Figure 9 is a schematic view showing the planar configuration of the conveyance table. Figure 8 is a sectional view showing the sectional configuration of the conveyance table.

[0023] Figure 10 is a schematic view showing the overall configuration of the substrate surface treatment apparatus of Embodiment 3 of the present disclosure (one).

[0024] Figure 11 is a schematic view showing the overall configuration of the substrate surface treatment apparatus of Embodiment 3 of the present disclosure (two).

[0025] Figure 12 is a schematic view showing the overall configuration of the substrate surface treatment apparatus of Embodiment 4 (one).

[0026] Figure 13 is a schematic view showing the overall configuration of the substrate surface treatment apparatus of Embodiment 4 (two).

[0027] Figure 14 is a plan view showing the planar configuration of the extended air supply mechanism. Figure 12 Figure 13 is a plan view showing the planar configuration of the extended air supply mechanism.

[0028] Figure 15 is a schematic view showing the overall configuration of the substrate surface treatment apparatus for comparison (one).

[0029] Figure 16 is a schematic view showing the overall configuration of the substrate surface treatment apparatus for comparison (two). DETAILED DESCRIPTION

[0030] <Embodiment 1> Figures 1-3 is a view showing the configuration of the substrate surface treatment apparatus 101 of Embodiment 1 of the present disclosure. Figure 1 Figure 2 ​​​are explanatory diagrams each schematically showing the overall configuration of the substrate surface treatment apparatus 101, Figure 3 is an explanatory diagram showing the planar configuration of the substrate surface treatment apparatus 101. In Figures 1-3 the XYZ orthogonal coordinate system is shown.

[0031] As shown in Figure 1 , the substrate surface treatment apparatus 101 is provided with a surface treatment chamber 51, a mist gas supply mechanism, a conveyance table 2, and an exhaust mechanism 31 as main constituent elements. The mist gas supply mechanism includes an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection portion 21 as main constituent elements.

[0032] The mist gas supply mechanism, the conveyance table 2, and the exhaust mechanism 31 are provided within the surface treatment chamber 51.

[0033] As shown in Figures 1-3 , the conveyance table 2 loads the back surface of the substrate 1 having a surface and a back surface on the surface, and itself moves in a conveyance direction D2 (+X direction) by a conveyance unit described later, thereby conveying the substrate 1 along the conveyance direction D2. The region in which the conveyance table 2 moves is defined as a conveyance path R2.

[0034] The surface of this conveyance table 2 becomes a loading surface of the substrate 1. As the substrate 1, for example, a glass plate, a silicon wafer, or the like can be considered. The conveyance table 2 is rectangular in plan view on the XY plane, and has four side surfaces at both ends in the X direction and both ends in the Y direction. The substrate 1 is rectangular in plan view on the XY plane. As shown in Figure 1 , the side surfaces at both ends in the X direction of the conveyance table 2 become side surfaces S2x, S2x, and as shown in Figure 2 , the side surfaces at both ends in the Y direction of the conveyance table 2 become side surfaces S2y, S2y. The distance between the side surfaces S2y, S2y becomes a distance L2y.

[0035] The table conveyance processing of moving the conveyance table 2 along the conveyance direction D2 can be implemented using a linear conveyance mechanism, a belt conveyer, or the like existing conveyance unit.

[0036] The ultrasonic atomizer 11 generates mist of a treatment liquid by applying ultrasonic vibration to the treatment liquid housed inside, and transmits treatment liquid mist gas 22 containing the mist of the treatment liquid toward the mist ejection portion 21 via the mist supply pipe 12 using a conveyance gas G1 supplied from the outside.

[0037] The mist ejection portion 21 receives the treatment liquid mist gas 22 via the mist supply pipe 12, and ejects the treatment liquid mist gas 22 toward the conveyance path R2 below (-Z direction). In this way, since the mist ejection portion 21 is disposed above the conveyance path R2, the treatment liquid mist gas 22 ejected from the mist ejection portion 21 in the -Z direction is supplied to the surface of the substrate 1 conveyed along the conveyance path R2.

[0038] Thus, the mist gas supply mechanism including the ultrasonic atomizer 11, the mist supply pipe 12, and the mist ejection portion 21 is able to supply the treatment liquid mist gas 22 to the surface of the substrate 1 conveyed along the conveyance path R2. Also, the treatment liquid mist gas 22 contains the treatment liquid mist obtained by atomizing the treatment liquid.

[0039] In addition, in Figure 1 and Figure 2 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 is schematically shown, Figure 1 and Figure 2 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 shown is not necessarily reflective of the actual configuration.

[0040] The exhaust mechanism 31 is disposed below (-Z direction) the conveyance table 2 moving along the conveyance path R2 having a conveyance width LY, and has an exhaust port A31 facing upward. The conveyance width LY coincides with the distance L2y between the side surfaces S2y, S2y shown in Figure 2 .

[0041] As shown in Figure 3 , the exhaust mechanism 31 has the exhaust port A31 in a region overlapping the conveyance path R2 having the conveyance width LY in plan view, takes in the treatment liquid mist gas 22 from the exhaust port A31, and performs exhaust processing that exhausts the taken-in treatment liquid mist gas 22 to the outside of the surface treatment chamber 51. As shown in Figure 3 , it is preferable that the entire exhaust port A32 overlaps the conveyance path R2 in plan view.

[0042] By the exhaust processing by the exhaust mechanism 31 disposed below the conveyance path R2, as shown in Figure 2 , a treatment space gas flow F51 (flow rate V1) toward the lower side (-Z direction) can be formed within the surface treatment chamber 51. The exhaust mechanism 31 performs the exhaust processing using existing technology that drives an exhaust fan not shown, or the like.

[0043] Thus, the substrate surface treatment apparatus 101 of Embodiment 1 disposes the mist ejection portion 21 of the mist gas supply mechanism above the conveyance path R2, and disposes the exhaust mechanism 31 below the conveyance path R2.

[0044] The exhaust mechanism 31 of the substrate surface treatment apparatus 101 of Embodiment 1 has the exhaust port A31 in a region overlapping the conveyance path R2 in plan view, performs exhaust processing, takes in the treatment liquid mist gas 22 from the exhaust port A31, and exhausts to the outside of the surface treatment chamber 51.

[0045] In the substrate surface treatment apparatus 101 of Embodiment 1, even if a treatment liquid mist gas 22 containing treatment liquid mist is supplied to the surface of the substrate 1 by a mist gas supply mechanism, the treatment liquid mist gas 22 may not reach the surface of the substrate 1 due to diffusion.

[0046] On the other hand, when the exhaust mechanism 31 performs exhaust processing, a mist gas flow path 22a is formed, which includes the area near the surface of the substrate along the surface of the substrate 1 and the processing liquid mist gas 22.

[0047] like Figure 1 and Figure 2 As shown, the mist gas flow path 22a is formed from above the surface of the substrate 1 (+Z direction), above the surface of the conveyor 2 (+Z direction) and above the four sides (S2x, S2x, S2y, S2y) of the conveyor 2, and from below the back of the conveyor 2 (-Z direction) toward the exhaust port A31. The surface of the substrate 1 and the area above the surface are called the substrate surface vicinity area.

[0048] Therefore, at least a portion of the processing liquid mist gas 22 ejected from the mist ejection section 21 that did not reach the surface of the substrate 1 due to diffusion phenomena, etc., flows in the mist gas flow path 22a that includes the area near the substrate surface. As a result, the processing liquid mist contained in the processing liquid mist gas 22 flowing in the area near the substrate surface re-adheres to the surface of the substrate 1.

[0049] As a result, the substrate surface treatment apparatus 101 of Embodiment 1 can increase the amount of treatment liquid mist used on the surface of the substrate 1, thereby improving the utilization efficiency of the treatment liquid mist relative to the surface of the substrate 1.

[0050] In addition, such as Figure 2 As shown, the mist gas flow path 22a is also formed above the side surface S2y on the ±Y direction side of the conveyor platform 2 (±Y direction), so even if the conveying unit is a belt conveyor, the processed liquid mist gas 22 can be guided to the exhaust port A31 without obstruction. This is because the mist gas flow path 22a formed above the side surface S2y of the conveyor platform 2 becomes the area outside the conveying path R2.

[0051] In addition, the mist gas flow path 22a formed on the side S2x and above S2x of the conveyor 2 can also guide the treated liquid mist gas 22 to the exhaust port A31 through the opening area of ​​the belt conveyor.

[0052] Furthermore, the mist gas supply mechanism in the substrate surface treatment apparatus 101 of Embodiment 1 includes an ultrasonic atomizer 11 that generates treatment liquid mist by applying ultrasonic vibration to the treatment liquid, thus enabling the production of treatment liquid mist gas 22 containing, for example, a small particle size of 15 μm or less.

[0053] Therefore, in accordance with the fact that the particle diameter of the treatment liquid mist is small, the proportion of the treatment liquid mist gas 22 in the mist gas flow path 22a including the vicinity of the substrate surface, which is flowing in the mist gas flow path 22a, in the treatment liquid mist gas 22 that does not reach the surface of the substrate 1 increases.

[0054] As a result, the substrate surface treatment apparatus 101 of Embodiment 1 can increase the amount of use of the treatment liquid mist to the surface of the substrate 1 by increasing the flow amount of the treatment liquid mist gas 22 flowing in the vicinity of the substrate surface, and can further improve the utilization efficiency of the treatment liquid mist with respect to the surface of the substrate 1.

[0055] The mist ejecting portion 21 of the substrate surface treatment apparatus 101 of Embodiment 1 is disposed above the conveyance path R2, and therefore the treatment liquid mist gas 22 ejected downward from the mist ejecting portion 21 is directly supplied to the surface of the substrate 1 conveyed along the conveyance path R2, whereby the treatment liquid mist can be attached to the surface of the substrate 1.

[0056] The exhaust mechanism 31 of the substrate surface treatment apparatus 101 of Embodiment 1 is disposed below the conveyance path R2, and therefore the treatment space gas flow F51 having the flow velocity V1 in the -Z direction is formed by the exhaust treatment of the exhaust mechanism 31, whereby the mist gas flow path 22a toward the exhaust port A31 from above the surface of the substrate 1 is formed. This mist gas flow path 22a necessarily includes the vicinity of the substrate surface.

[0057] Therefore, the degree of re-attachment of the treatment liquid mist included in the treatment liquid mist gas flowing in the vicinity of the substrate surface in the mist gas flow path 22a to the surface of the substrate 1 can be improved.

[0058] As a result, the substrate surface treatment apparatus 101 of Embodiment 1 can increase the amount of use of the treatment liquid mist to the surface of the substrate 1, and can further improve the utilization efficiency of the treatment liquid mist with respect to the surface of the substrate 1.

[0059] <Embodiment 2> (Basic Configuration) Figures 4-6 is an explanatory diagram showing the basic configuration of the substrate surface treatment apparatus 102 of Embodiment 2 of the present disclosure. Figure 4 and Figure 5 are explanatory diagrams respectively showing the overall configuration of the substrate surface treatment apparatus 102, Figure 6 is an explanatory diagram showing Figure 4 and Figure 5 are explanatory diagrams showing the planar configuration of the substrate surface treatment apparatus 102 shown in Figures 4-6 in which XYZ orthogonal coordinate systems are respectively shown.

[0060] Hereinafter, the basic configuration of the substrate surface treatment apparatus 102 of Embodiment 2 will be described with reference to Figures 1-3The same components as in Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted as appropriate, and the features of the substrate surface treatment apparatus 102 of Embodiment 2 are described focusing on the basic configuration thereof.

[0061] As shown in Figure 4 The substrate surface treatment apparatus 102 has a mist gas supply mechanism and a conveyance table 2B as main components. The mist gas supply mechanism includes the ultrasonic atomizer 11, the mist supply pipe 12, and the mist ejection portion 21 as main components, as in Embodiment 1. The mist gas supply mechanism and the conveyance table 2B can also be provided in the surface treatment chamber 51, as in the substrate surface treatment apparatus 101 of Embodiment 1.

[0062] As shown in Figures 4-6 The conveyance table 2B is placed on the substrate 1 on the substrate placement region 3 in the surface thereof, and itself moves along the conveyance direction D2 (+X direction) by the existing conveyance unit, thereby conveying the substrate 1 along the conveyance direction D2. The region in which the conveyance table 2B moves is defined as a conveyance path R2.

[0063] The substrate surface treatment apparatus 102 of Embodiment 2 is characterized in that the conveyance table 2B in which the exhaust mechanism 32 is built in is provided. The exhaust mechanism 32 provided in the conveyance table 2B moves integrally with the conveyance table 2B, and thus the exhaust mechanism 32 is provided in the conveyance path R2.

[0064] As shown in Figure 6 The conveyance table 2B has a rectangular shape when viewed from above in the XY plane, and has two side surfaces S2x, S2x at both ends in the X direction and two side surfaces S2y, S2y at both ends in the Y direction. The surface of the conveyance table 2B has the substrate placement region 3 for placing the substrate 1 in the central region thereof. The substrate placement region 3 has a slightly larger formation area than the substrate 1.

[0065] The substrate 1 is placed on the surface of the conveyance table 2B in the substrate placement region 3. Thus, the conveyance table 2B has the substrate placement region 3 for placing the substrate 1 in the surface thereof.

[0066] As the plurality of exhaust ports provided in the surface of the conveyance table 2B, two exhaust ports A32 are provided. As shown in Figure 6 One of the two exhaust ports A32 is provided on the +Y direction side with respect to the substrate placement region 3, and the other is provided on the -Y direction side with respect to the substrate placement region 3. Thus, the two exhaust ports A32 provided in the surface of the conveyance table 2B are placed so as not to overlap the substrate placement region 3.

[0067] The exhaust mechanism 32 performs exhaust treatment of making the processing liquid mist gas 22 taken in from the two exhaust ports A32 join inside and then exhaust to the outside. By providing the exhaust mechanism 32 inside the conveyance table 2B, the processing space gas flow F51 (flow rate V2) toward the lower side (-Z direction) can be formed by the exhaust treatment of the exhaust mechanism 32 disposed in the conveyance path R2. The exhaust mechanism 32 performs the exhaust treatment using a related art such as driving an exhaust fan not shown.

[0068] The conveyance table 2B moving along the conveyance direction D2 can be realized using a linear conveyance mechanism, a belt conveyer, or the like.

[0069] Further, in Figure 4 and Figure 5 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12, Figure 4 and Figure 5 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 shown is not necessarily reflective of the actual configuration.

[0070] In the substrate surface processing apparatus 102, the mist ejection portion 21 of the mist gas supply mechanism is disposed above the conveyance path R2, and the exhaust mechanism 32 is disposed inside the conveyance table 2B, that is, inside the conveyance path R2.

[0071] In the substrate surface processing apparatus 102 of Embodiment 2, the exhaust mechanism 32 disposed inside the conveyance table 2B has two exhaust ports A32. Therefore, the exhaust mechanism 32 performs exhaust treatment, takes in the processing liquid mist gas 22 from the two exhaust ports A32, and exhausts the processing liquid mist gas 22 to the outside.

[0072] When the exhaust mechanism 32 performs the exhaust treatment, the mist gas flow path 22b of the processing liquid mist gas 22 along the substrate surface vicinity region on the surface of the substrate 1 is formed.

[0073] As shown in Figure 4 and Figure 5 , the mist gas flow path 22b is formed from above the surface of the substrate 1 (+Z direction), via above the surface of the conveyance table 2B (+Z direction), from the two exhaust ports A32 to inside the exhaust mechanism 32. The region of the surface and above the surface of the substrate 1 becomes the substrate surface vicinity region.

[0074] Therefore, the substrate surface processing apparatus 102 of Embodiment 2, like the substrate surface processing apparatus 101 of Embodiment 1, can realize an increase in the utilization efficiency of the processing liquid mist with respect to the surface of the substrate 1.

[0075] The exhaust mechanism 32 of the substrate surface treatment device 102 of Embodiment 2 is disposed in the conveyance table 2B, i.e., in the conveyance path R2, and thus forms the treatment space gas flow F51 having the flow rate V2 in the -Z direction, thereby forming the mist gas flow passage 22b toward the 2 exhaust ports A31 from above the surface of the substrate 1. This mist gas flow passage 22b necessarily includes the vicinity of the surface of the substrate.

[0076] Therefore, the substrate surface treatment device 102, which is the basic configuration of Embodiment 2, can further improve the utilization efficiency of the mist of the treatment liquid with respect to the surface of the substrate 1, like the substrate surface treatment device 101 of Embodiment 1.

[0077] Further, the exhaust mechanism 32 in the substrate surface treatment device 102 of Embodiment 2 is disposed in the conveyance table 2B, and thus the mist gas flow passage 22b can be formed by the exhaust treatment of the exhaust mechanism 32 without being affected by the movement of the conveyance table 2B.

[0078] Further, the substrate surface treatment device 102 of Embodiment 2 has the 2 exhaust ports A32 on the surface of the conveyance table 2B, which do not overlap with the substrate disposition region 3. Therefore, the substrate surface treatment device 102 can exhaust the mist gas 22 of the treatment liquid without obstruction from the 2 exhaust ports A32, and accordingly, the exhaust speed is improved, and thus the flow amount of the mist gas 22 of the treatment liquid per unit time, i.e., the mist gas flow amount, is increased.

[0079] Therefore, the substrate surface treatment device 102, which is the basic configuration of Embodiment 2, can improve the degree of reattachment of the mist of the treatment liquid included in the mist gas 22 of the treatment liquid flowing in the vicinity of the surface of the substrate in the mist gas flow passage 22b, with the high-speed exhaust of the mist gas 22 of the treatment liquid.

[0080] Further, it is considered that the exhaust speed of the exhaust treatment of the exhaust mechanism 32 has a positive correlation with the reattachment amount of the mist of the treatment liquid until the upper limit exhaust speed at which the mist of the treatment liquid is difficult to reattach to the surface of the substrate 1 is exceeded. Therefore, it is preferable to set the exhaust speed to be high within the range not exceeding the upper limit exhaust speed.

[0081] As a result, the substrate surface treatment device 102 of Embodiment 2 can further improve the utilization efficiency of the mist of the treatment liquid with respect to the surface of the substrate 1.

[0082] (Comparative Device) Figure 15 and Figure 16 is an explanatory view schematically showing the overall configuration of the comparative substrate surface treatment device 200. In Figure 15 and Figure 16 are respectively described in the XYZ orthogonal coordinate system.

[0083] Hereinafter, the same reference numerals are assigned to the same components as those of Embodiment 1 shown in FIG. 1, and the description is omitted as appropriate, and the description is made focusing on the features of the comparative substrate surface treatment apparatus 200. Figures 1-3

[0084] As shown in FIG. 2, the comparative substrate surface treatment apparatus 200 has a surface treatment chamber 53, a mist gas supply mechanism, a conveyance table 2, and an exhaust mechanism 34 as main constituent elements. The mist gas supply mechanism includes an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection portion 21 as main constituent elements, as with the basic configuration of Embodiments 1 and 2. The mist gas supply mechanism, the conveyance table 2, and the exhaust mechanism 34 are disposed in the surface treatment chamber 53. Figure 15

[0085] The exhaust mechanism 34 in the comparative substrate surface treatment apparatus 200 is disposed at the top of the surface treatment chamber 53 above the conveyance path R2 and the mist ejection portion 21. The exhaust mechanism 34 has an exhaust port A34 facing downward (-Z direction side).

[0086] The exhaust mechanism 34 performs exhaust treatment of taking out the treatment liquid mist gas 22 taken in from the exhaust port A34 to the outside of the surface treatment chamber 53. As shown in FIG. 2, by the exhaust treatment of the exhaust mechanism 34, it is possible to form a treatment space gas flow F53 toward the upward (+Z direction). The exhaust mechanism 34 performs the exhaust treatment using a related art of driving an exhaust fan not shown or the like. Figure 16

[0087] Further, in Embodiments 1 and 2, the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12, Figure 15 Figure 16 the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in FIG. 1 and FIG. 2 does not necessarily reflect the actual configuration. Figure 15 Figure 16

[0088] In the comparative substrate surface treatment apparatus 200, the mist ejection portion 21 of the mist gas supply mechanism is disposed above the conveyance path R2, and the exhaust mechanism 34 is disposed above the mist ejection portion 21.

[0089] In the comparative substrate surface treatment apparatus 200, the exhaust mechanism 34 performs exhaust treatment, takes out the treatment liquid mist gas 22 from the exhaust port A34, and forms a mist gas flow passage 22x of the treatment liquid mist gas 22 when being discharged to the outside of the surface treatment chamber 53.

[0090] As shown in FIG. 2 and FIG. 3, the mist gas flow passage 22x is formed from the surface of the substrate 1 toward the upward exhaust port A34. Figure 15 Figure 16

[0091] ​​​​​​​​In the substrate surface treatment device 200, most of the treatment liquid mist gas 22 that diffuses without reaching the surface of the substrate 2 is discharged by the exhaust mechanism 34. However, the treatment liquid mist gas 22 is ejected from the mist ejection section 21 toward the lower side (-Z direction), and is further affected by the gravity toward the lower side, and thus the mist gas flow path 22x includes a part of the vicinity of the substrate surface region.

[0092] As a result, the comparative substrate surface treatment device 200 can cause the treatment liquid mist included in the treatment liquid mist gas 22 that flows in a part of the vicinity of the substrate surface region to re-attach to the surface of the substrate 1. However, the re-attachment amount of the treatment liquid mist is less than that of the basic configurations of Embodiment 1 and Embodiment 2.

[0093] (Comparative Results) Figure 7 This is a diagram that shows the mist attachment effect of the substrate surface treatment device 102 of Embodiment 2 in a table form.

[0094] In the substrate surface treatment device 102 and the substrate surface treatment device 200, a plate-shaped substrate having a planar shape of 100 mm x 100 mm and a thickness of 0.3 mm was used as the substrate 1. Ion-exchanged water was used as the treatment liquid of the treatment liquid mist, and the conveyance speed of the conveyance table 2 (2B) was set to 100 mm / min. Further, the conveyance speed of the conveyance table 2 and the re-attachment amount of the treatment liquid mist have a negative correlation.

[0095] Further, the amount of the treatment liquid mist that attaches to the substrate 1, that is, the mist attachment amount, has a positive correlation between the ion-exchanged water and the treatment liquid actually used. In addition, as the treatment liquid used in actual use, an alkaline degreasing liquid (a solution including sodium hydroxide, phosphoric acid), a solution including sulfuric acid for acid cleaning treatment, a solution including iron (III) chloride for etching treatment, a solution including a metal organic compound such as TEOS for surface modification, a solution including sodium hydroxide for resist removal, and the like can be considered.

[0096] In addition, the exhaust speed of the exhaust mechanism 34 of the substrate surface treatment device 200, that is, the upper exhaust speed (L / s) was set to "9.4", and the case where the exhaust speed of the exhaust mechanism 32 built in the conveyance table 2B, that is, the table exhaust speed (L / s) was "0.3" was taken as the substrate surface treatment device 102-1, and the case where the table exhaust speed (L / s) was "0.6" was taken as the substrate surface treatment device 102-2.

[0097] The table exhaust speed of the exhaust mechanism 32 of each of the substrate surface treatment devices 102-1 and 102-2 is the exhaust speed measured at the two measurement points P32 of the two exhaust ports A32.

[0098] Under the above conditions, in a case where the mist adhesion amount (mL / μm 3 ) of the mist of the treatment liquid mist of the substrate surface treatment device 200 to the surface of the substrate 1 is set to "1", the mist adhesion amount of the substrate surface treatment device 102-1 is increased to "1.05", and the mist adhesion amount of the substrate surface treatment device 102-2 is increased to "1.15".

[0099] Thus, according to Figure 7 the substrate surface treatment device 102 of the basic configuration of Embodiment 2, the effect of improving the utilization efficiency of the mist of the treatment liquid with respect to the surface of the substrate 1 is exerted.

[0100] Further, in the surface treatment chamber 53 that treats the fine mist of the treatment liquid of 15 μm or less, the importance of discharging the mist of the treatment liquid outside the surface treatment chamber 53 is high, and thus the exhaust mechanism 34 must be provided in the comparative substrate surface treatment device 200.

[0101] (Modified Example) Figure 8 and Figure 9 is a explanatory diagram showing the configuration of the substrate surface treatment device 102B of the modified example of Embodiment 2 of the present disclosure. Figure 8 is a explanatory diagram showing the planar configuration of the conveyance table in the substrate surface treatment device 102B, Figure 9 is a explanatory diagram schematically showing Figure 8 the cross-sectional configuration of the conveyance table shown in Figure 8 and Figure 9 the XYZ orthogonal coordinate system is described in each of

[0102] Hereinafter, the same reference numerals are attached to the same configuration as the basic configuration of Embodiment 2 shown in Figures 4-6 , and the description is appropriately omitted, and the substrate surface treatment device 102B of the modified example of Embodiment 2 is described focusing on the features thereof.

[0103] The substrate surface treatment device 102B has the mist gas supply mechanism and the conveyance table 2C as the main constituent elements. That is, the substrate surface treatment device 102B is characterized in that the conveyance table 2C is provided instead of the conveyance table 2B compared to the substrate surface treatment device 102.

[0104] As shown in Figure 8 and Figure 9 , the conveyance table 2C is disposed on the substrate 1 on the substrate disposition region 3 of the surface that becomes the placement surface, and itself moves along the conveyance direction D2 (+X direction) by the existing conveyance unit, thereby conveying the substrate 1 along the conveyance direction D2. The region where the conveyance table 2C moves is defined as the conveyance path R2.

[0105] The substrate 1 is arranged on the surface of the conveyance table 2C in the substrate arrangement region 3. In this way, the conveyance table 2C has the substrate arrangement region 3 for arranging the substrate 1 on the surface.

[0106] The substrate surface processing apparatus 102B of Embodiment 2 is characterized in that the conveyance table 2C in which the exhaust mechanism 33 is built in is provided. The exhaust mechanism 33 provided in the conveyance table 2C moves integrally with the conveyance table 2C, and thus the exhaust mechanism 33 is provided in the conveyance path R2.

[0107] As shown in FIG. 2, the conveyance table 2C has a rectangular shape when viewed from above in the XY plane, and has four side surfaces (S2x, S2x, S2y, S2y) at both ends in the X direction and both ends in the Y direction. A plurality of exhaust ports A33 are provided on the surface of the conveyance table 2C in a matrix shape (lattice shape). Figure 8 Figure 8 The plurality of exhaust ports A33 arranged in a matrix shape of 8 x 8 are shown in FIG. 3. In addition, the plurality of exhaust ports A33 arranged in a matrix shape of 4 x 4 are shown in FIG. 4. Figure 8 Figure 9 The plurality of exhaust ports A33 are schematically shown, and the number and arrangement of the exhaust ports A33 are not consistent.

[0108] The surface of the conveyance table 2C has the substrate arrangement region 3 for arranging the substrate 1. The substrate arrangement region 3 overlaps a part of the plurality of exhaust ports A33. The substrate arrangement region 3 has a larger formation area than the substrate 1.

[0109] As described above, the plurality of exhaust ports A33 provided on the surface of the conveyance table 2C are arranged in a matrix shape. As shown in FIG. 5, in a state where the substrate 1 is arranged in the substrate arrangement region 3 on the surface of the conveyance table 2C, most of the exhaust ports A33 among the plurality of exhaust ports A33 do not overlap the substrate arrangement region 3. That is, a part of the plurality of exhaust ports A33 are arranged without overlapping the substrate arrangement region 3. Figure 8

[0110] The exhaust mechanism 33 performs exhaust processing of taking in the processing liquid mist gas 22 from most of the exhaust ports A33 among the plurality of exhaust ports A33 which are not blocked by the substrate 1, and discharging the processing liquid mist gas 22 to the outside after the processing liquid mist gas 22 is merged in the exhaust mechanism 33. The substrate surface processing apparatus 102B, like the substrate surface processing apparatus 102, can form the processing space gas flow F51 toward the lower side (-Z direction) by the exhaust processing of the exhaust mechanism 33 provided in the conveyance table 2C. The exhaust mechanism 33 performs the exhaust processing using a related art such as driving of an exhaust fan not shown.

[0111] The table conveyance processing of moving the conveyance table 2C in the conveyance direction D2 can be implemented using a related art conveyance unit such as a linear conveyance mechanism or a belt conveyer.

[0112] ​​​In the substrate surface treatment apparatus 102B that is a modification of Embodiment 2, the mist gas supply mechanism's mist discharge portion 21 is disposed above the conveyance path R2, and the exhaust mechanism 33 is disposed inside the conveyance table 2C, that is, inside the conveyance path R2.

[0113] In the substrate surface treatment apparatus 102B that is a modification of Embodiment 2, the exhaust mechanism 33 disposed inside the conveyance table 2C has a plurality of exhaust ports A33 disposed in a matrix. Therefore, the exhaust mechanism 33 can perform exhaust treatment, taking in the treatment liquid mist gas 22 from a majority of the plurality of exhaust ports A33, and discharging it to the outside.

[0114] When the exhaust mechanism 33 performs exhaust treatment, a mist gas flow path that contains the vicinity of the substrate surface along the substrate surface on the surface of the substrate 1 is formed. If this mist gas flow path is set as a mist gas flow path 22c, the mist gas flow path 22c becomes the same flow path as the mist gas flow path 22b of the substrate surface treatment apparatus 102 shown in Figs. 1 and 2. Figure 4 and Figure 5

[0115] Therefore, the substrate surface treatment apparatus 102B that is a modification of Embodiment 2, like the substrate surface treatment apparatus 101 of Embodiment 1 and the substrate surface treatment apparatus 102 that is a basic configuration of Embodiment 2, can achieve an increase in the utilization efficiency of the treatment liquid mist with respect to the surface of the substrate 1.

[0116] Further, since the exhaust mechanism 33 in the substrate surface treatment apparatus 102B that is a modification of Embodiment 2 is disposed inside the conveyance table 2C, the mist gas flow path can be formed by the exhaust treatment of the exhaust mechanism 33 without being affected by the movement of the conveyance table 2C.

[0117] Furthermore, the substrate surface treatment apparatus 102B that is a modification of Embodiment 2 has a majority of the plurality of exhaust ports A33 that do not overlap with the substrate arrangement region 3 on the surface of the conveyance table 2C. Therefore, the substrate surface treatment apparatus 102B can discharge the treatment liquid mist gas 22 from a majority of the exhaust ports A33 without obstruction, and accordingly increase the exhaust speed, thereby being able to increase the mist gas flow rate.

[0118] Further, there are "3" or more exhaust ports A33 that do not overlap with the substrate arrangement region 3 among the plurality of exhaust ports A33 disposed in a matrix, and therefore the exhaust mechanism 33 of the modification can increase the exhaust speed to be higher than the exhaust mechanism 32 of the basic configuration.

[0119] In addition, as described above, it is preferable to set the exhaust speed to be high within a range that does not exceed the upper limit exhaust speed.

[0120] ​Here, if the flow velocity of the gas flow F51 in the processing space formed by the exhaust processing of the exhaust mechanism 33 is set as the flow velocity V2B, it is expected that the flow velocity V2B will be higher than the flow velocity V2 of the gas flow F51 in the processing space formed by the exhaust processing of the exhaust mechanism 32.

[0121] Therefore, compared with the substrate surface treatment apparatus 102, which is a basic component, the substrate surface treatment apparatus 102B, which is a modified example of embodiment 2, can improve the utilization efficiency of the treatment liquid mist relative to the surface of the substrate 1.

[0122] Furthermore, in the substrate surface treatment apparatus 102B, by making the formation area of ​​the multiple exhaust ports A33 arranged in a matrix sufficiently larger than the formation area of ​​the substrate configuration region 3, the degree of freedom of the substrate configuration region 3 on the surface of the conveyor table 2C can be increased.

[0123] <Implementation Method 3> Figure 10 and Figure 11 This is an explanatory diagram schematically showing the overall configuration of the substrate surface treatment apparatus 103 according to Embodiment 3 of this disclosure. Figure 10 and Figure 11 The XYZ orthogonal coordinate system is recorded in the table.

[0124] The following is about... Figures 1-3 The same components as those in Embodiment 1 are shown with the same reference numerals in the accompanying drawings, and descriptions are omitted as appropriate. The description will focus on the features of the substrate surface treatment apparatus 103 in Embodiment 3.

[0125] like Figure 10 As shown, the substrate surface treatment apparatus 103 includes a surface treatment chamber 51, a mist gas supply mechanism, a conveyor table 2, an exhaust mechanism 31, and a gas supply mechanism 41 as its main components. The mist gas supply mechanism is similar to that in Embodiments 1 and 2, including an ultrasonic atomizer 11, a mist supply pipe 12, and a mist spraying section 21 as its main components. The mist gas supply mechanism, conveyor table 2, exhaust mechanism 31, and gas supply mechanism 41 are installed inside the surface treatment chamber 51.

[0126] The substrate surface treatment apparatus 103 of Embodiment 3 is characterized in that an air supply mechanism 41 is provided above the conveying path R2 of the conveyor table 2, and an exhaust mechanism 31 is provided below it. The air supply mechanism 41 has an air supply port A41 facing downwards. On the other hand, the exhaust mechanism 31 has an exhaust port A31 facing upwards.

[0127] The gas supply mechanism 41, located at the top of the surface treatment chamber 51, performs the gas supply process of supplying gas G2 from the gas supply port A41 into the surface treatment chamber 51.

[0128] The exhaust mechanism 31 is disposed below (-Z direction) the conveyance table 2 that moves along the conveyance path R2, and has an exhaust port A31 in a region overlapping the conveyance path R2 in plan view. The exhaust mechanism 31 performs an exhaust process of taking in the treatment liquid mist gas 22 from the exhaust port A31 and discharging the taken-in treatment liquid mist gas 22 to the outside of the surface treatment chamber 51.

[0129] By the supply process by the supply mechanism 41 and the exhaust process by the exhaust mechanism 31, two flows of air are provided, and thus a treatment space gas flow F51 (flow rate V3) toward the lower side (-Z direction) can be formed in the surface treatment chamber 51.

[0130] The flow rate V3 of the treatment space gas flow F51 in the substrate surface treatment apparatus 103 is faster than the flow rate V1 of the treatment space gas flow F51 in the substrate surface treatment apparatus 101 of Embodiment 1 by an amount corresponding to the flow of the supply gas G2 added by the supply process by the supply mechanism 41. Further, by forming the supply port A41 of the supply mechanism 41 and the exhaust port A31 of the exhaust mechanism 31 in the same manner in a region overlapping the conveyance path R2 in plan view, an increase in the speed of the flow rate V3 can be expected.

[0131] Further, in Figure 10 and Figure 11 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 is schematically shown, Figure 10 and Figure 11 , the configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 is schematically shown.

[0132] In the substrate surface treatment apparatus 103 of Embodiment 3, the supply mechanism 41 that supplies the supply gas G2 from the supply port A41 into the surface treatment chamber 51 is provided above the mist ejection portion 21, and the exhaust mechanism 31 is disposed below the conveyance path R2.

[0133] The exhaust mechanism 31 of the substrate surface treatment apparatus 103 of Embodiment 3 has the exhaust port A31 in a region overlapping the conveyance path R2 in plan view. Thus, when the exhaust mechanism 31 performs an exhaust process of taking in the treatment liquid mist gas 22 from the exhaust port A31 and discharging the taken-in treatment liquid mist gas 22 to the outside of the surface treatment chamber 51, a mist gas flow path 22d including a region near the surface of the substrate is formed.

[0134] As a result, the substrate surface treatment apparatus 103 of Embodiment 3, like the substrate surface treatment apparatus 101 of Embodiment 1, can increase the amount of use of the treatment liquid mist to the surface of the substrate 1, and thus can achieve an increase in the utilization efficiency of the treatment liquid mist to the surface of the substrate 1.

[0135] Further, the substrate surface treatment apparatus 103 of Embodiment 3 is also provided with the gas supply mechanism 41, and thus the gas supply processing by the gas supply mechanism 41 and the exhaust processing of the treatment liquid mist gas 22 by the exhaust mechanism 31 are performed in parallel. Therefore, two flows of air are formed within the surface treatment chamber 51, and accordingly the exhaust speed of the treatment liquid mist gas 22 circulating in the mist gas circulation path 22d can be increased.

[0136] Further, as described above, it is preferable to set the exhaust speed to be high within a range not exceeding the upper limit exhaust speed.

[0137] With the increase in the exhaust speed of the treatment liquid mist gas 22, the degree of reattachment of the treatment liquid mist contained in the treatment liquid mist gas 22 circulating in the vicinity of the surface of the substrate 1 in the mist gas circulation path 22d to the surface of the substrate 1 can be increased. As a result, the substrate surface treatment apparatus 103 of Embodiment 3 can achieve further improvement in the utilization efficiency of the treatment liquid mist with respect to the surface of the substrate 1.

[0138] <Embodiment 4> Figures 12-14 is an explanatory diagram indicating the basic configuration of the substrate surface treatment apparatus 104 of Embodiment 4 of the present disclosure. Figure 12 and Figure 13 are explanatory diagrams schematically indicating the overall configuration of the substrate surface treatment apparatus 104, respectively, Figure 14 is an explanatory diagram indicating Figure 12 and Figure 13 is an explanatory diagram of the planar configuration of the extended gas supply mechanism 42 in the substrate surface treatment apparatus 104 shown in Figures 12-14 has an XYZ orthogonal coordinate system described therein, respectively.

[0139] Hereinafter, the same reference numerals are attached to the same configurations as those of Embodiment 1 or Embodiment 3 shown in Figures 1-3 and Figure 10 and Figure 11 and appropriate description is omitted, and the features of the substrate surface treatment apparatus 104 of Embodiment 4 are described.

[0140] As shown in Figure 12 and Figure 13 , the substrate surface treatment apparatus 104 is provided with the surface treatment chamber 51, the mist gas supply mechanism, the conveyance table 2, the exhaust mechanism 31, and the extended gas supply mechanism 42 as main constituent elements. The mist gas supply mechanism, like Embodiments 1 to 3, includes the ultrasonic atomizer 11, the mist supply pipe 12, and the mist ejection portion 21 as main constituent elements. The mist gas supply mechanism, the conveyance table 2, the exhaust mechanism 31, and the extended gas supply mechanism 42 are disposed within the surface treatment chamber 51.

[0141] The substrate surface treatment apparatus 104 of Embodiment 4 is characterized in that the extended gas supply mechanism 42 is provided above the conveyance path R2 of the conveyance table 2, and the exhaust mechanism 31 is provided below. The extended gas supply mechanism 42 has a gas supply port A42 facing downward. On the other hand, the exhaust mechanism 31 has an exhaust port A31 facing upward.

[0142] The extended gas supply mechanism 42 provided at the top of the surface treatment chamber 51 performs a gas supply process of supplying the gas supply gas G2 from the gas supply port A42 below into the surface treatment chamber 51.

[0143] As shown in Figure 14 , the gas supply port A42 of the extended gas supply mechanism 42 overlaps the conveyance path R2 in plan view, and has a larger formation area than the area of the conveyance table 2. Also, as shown in Figure 14 , it is preferable that the gas supply port A42 include the entire conveyance path R2 in the Y direction in the drawing, and the formation width W42 in the Y direction be wider than the conveyance width LY.

[0144] Therefore, by the gas supply process of supplying the gas supply gas G2 from the gas supply port A42 of the extended gas supply mechanism 42, the gas supply gas G2 is supplied as a downflow gas to a relatively wide area inside the surface treatment chamber 51. In this specification, the "downflow gas" refers to a gas in which the flow of air in the -Z direction is intentionally increased.

[0145] The exhaust mechanism 31 is disposed below the conveyance table 2 moving along the conveyance path R2 (-Z direction), has the exhaust port A31 in an area overlapping the conveyance path R2 in plan view, and performs an exhaust process of taking in the treatment liquid mist gas 22 from the exhaust port A31 and discharging the taken-in treatment liquid mist gas 22 outside the surface treatment chamber 51.

[0146] By providing two flows of air by the gas supply process of the extended gas supply mechanism 42 and the exhaust process of the exhaust mechanism 31, it is possible to form a treatment space gas flow F51 (flow rate V4) toward the below (-Z direction) inside the surface treatment chamber 51.

[0147] By the gas supply process of the extended gas supply mechanism 42, an intentional flow toward the below of the gas supply gas G2 is added in a relatively large area including the entire surface of the substrate 1. Therefore, the flow rate V4 of the treatment space gas flow F51 in the substrate surface treatment apparatus 104 is faster than the flow rates VI and V3 of the treatment space gas flows F51 of Embodiments 1 and 3.

[0148] Furthermore, in Figure 12 and Figure 13 , the ultrasonic atomizer 11 and the mist supply pipe 12, Figure 12 and Figure 13The configuration of the ultrasonic atomizer 11 and the mist supply pipe 12 shown is not necessarily reflective of an actual configuration.

[0149] In the substrate surface treatment device 104 of Embodiment 4, the extended supply mechanism 42 that supplies a relatively large volume of supply gas G2 from the supply port A42 toward the lower side (-Z direction) is provided above the mist ejection section 21. The exhaust mechanism 31 is disposed below the transport path R2.

[0150] The exhaust mechanism 31 of the substrate surface treatment device 104 of Embodiment 4 has an exhaust port A31 in a region overlapping the transport path R2 in plan view. Therefore, the exhaust mechanism 31 performs exhaust processing, takes in the mist gas 22 of the treatment liquid from the exhaust port A31, and discharges it to the outside of the surface treatment chamber 51, forming a mist gas flow path 22e including the region near the surface of the substrate 1.

[0151] As a result, the substrate surface treatment device 104 of Embodiment 4, like the substrate surface treatment device 101 of Embodiment 1, can increase the amount of use of the mist of the treatment liquid to the surface of the substrate 1, and thus can achieve an improvement in the utilization efficiency of the mist of the treatment liquid to the surface of the substrate 1.

[0152] Further, the substrate surface treatment device 104 of Embodiment 4 further has the extended supply mechanism 42, and thus, like Embodiment 3, performs in parallel the supply processing of the supply gas G2 by the extended supply mechanism 42 and the exhaust processing of the mist gas 22 of the treatment liquid by the exhaust mechanism 31. Therefore, the substrate surface treatment device 104 of Embodiment 4, like Embodiment 3, can increase the exhaust speed of the mist gas 22 of the treatment liquid flowing in the mist gas flow path 22e.

[0153] Further, in the substrate surface treatment device 104 of Embodiment 4, the supply gas G2 generated by the supply processing of the extended supply mechanism 42 having the supply port A42 with a relatively large area is supplied as a downflow gas, and thus the flow rate V4 of the treatment space gas flow F51 toward the lower side can be intentionally increased.

[0154] Therefore, the substrate surface treatment device 104 of Embodiment 4 can make the exhaust speed of the mist gas 22 of the treatment liquid flowing in the mist gas flow path 22e higher than the exhaust speed of the mist gas 22 of the treatment liquid flowing in the mist gas flow path 22d of Embodiment 3, and accordingly, can achieve an improvement in the utilization efficiency of the mist of the treatment liquid to the surface of the substrate 1 in Embodiments 3 and above.

[0155] Further, as described above, it is preferable to set the exhaust speed to be relatively high within a range not exceeding the upper limit exhaust speed.

[0156] [Other] In the above-described embodiments, the treatment liquid mist is generated using the ultrasonic atomizer 11, but a mist other than the ultrasonic atomizer 11 can be used to generate the treatment liquid mist. By using a mist other than the ultrasonic atomizer 11, the substrate surface treatment apparatus is configured in the same configuration as Embodiments 1 to 4, and improvement in the utilization efficiency of the treatment liquid mist with respect to the surface of the substrate 1 can be achieved.

[0157] Although the present disclosure has been described in detail, the above description is illustrative in all aspects, and the present disclosure is not limited thereto. It should be understood that numerous modifications that are not exemplified can be conceived without departing from the scope of the present disclosure.

[0158] Explanation of Reference Signs 1 … substrate; 2, 2B, 2C … conveyance table; 11 … ultrasonic atomizer; 21 … mist ejection portion; 31 to 33 … exhaust mechanism; 41 … air supply mechanism; 42 … expanded air supply mechanism; 101, 102, 102B, 103, 104, 200 … substrate surface treatment apparatus; A31 to A33 … exhaust port; A41, A42 … air supply port.

Claims

1. A substrate surface processing apparatus which processes a surface of a substrate having a surface and a back surface, wherein, Comprising: a conveying table that places a back surface of the substrate on a placement surface and conveys the substrate by moving itself; and a mist gas supply mechanism that supplies a treatment liquid mist gas toward a surface of the substrate being conveyed, a region in which the conveying table moves is defined as a conveying path, the treatment liquid mist gas includes a treatment liquid mist obtained by atomizing a treatment liquid, the substrate surface treatment apparatus further comprises: an exhaust mechanism that has an exhaust port in a region overlapping the conveying path in plan view and performs exhaust processing of exhausting the treatment liquid mist gas from the exhaust port.

2. The substrate surface treatment apparatus according to claim 1, wherein the mist gas supply mechanism includes: an ultrasonic atomizer that generates the treatment liquid mist by applying ultrasonic vibration to the treatment liquid and delivers the treatment liquid mist gas including the treatment liquid mist via a mist supply pipe; and a mist ejection portion that receives the treatment liquid mist gas via the mist supply pipe and ejects the treatment liquid mist gas toward the conveying path.

3. The substrate surface treatment apparatus according to claim 2, wherein the mist ejection portion is disposed above the conveying path, the exhaust mechanism is disposed within the conveying path or below the conveying path.

4. The substrate surface treatment apparatus according to claim 2 or 3, wherein the exhaust mechanism is provided within the conveying table.

5. The substrate surface treatment apparatus according to claim 4, wherein the exhaust port includes a plurality of exhaust ports provided to the placement surface of the conveying table, the placement surface of the conveying table having a substrate disposition region for disposition of the substrate, the plurality of exhaust ports are disposed so as not to overlap the substrate disposition region.

6. The substrate surface treatment apparatus according to claim 4, wherein the exhaust port includes a plurality of exhaust ports provided to the placement surface of the conveying table, the placement surface of the conveying table having a substrate disposition region for disposition of the substrate, the plurality of exhaust ports are disposed in a matrix, a portion of the plurality of exhaust ports being disposed so as not to overlap the substrate disposition region.

7. The substrate surface treatment apparatus according to any one of claims 3 to 6, further comprising: a gas supply mechanism disposed above the mist ejection portion and performing gas supply processing of supplying a supply gas from a supply port toward a lower portion, the exhaust mechanism being disposed below the conveying path.

8. The substrate surface treatment apparatus according to claim 7, wherein the gas supply mechanism includes an extended gas supply mechanism, the supply port of the extended gas supply mechanism overlaps the conveying path in plan view and has a formation area larger than an area of the conveying table. ​

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