A data center organosilicon immersion coolant and method of use

Abstract

The application belongs to the technical field of cooling liquid, and relates to a data center organic silicon immersion type cooling liquid and an application method. The data center organic silicon immersion type cooling liquid comprises a first organic silicon component with a structural formula of (CH3)3SiO[(R1)2SiO] n Si(CH3)3, n is 1-50, R1 is methyl, phenyl or long-chain alkyl with 1-17 carbon atoms; and a second organic silicon component with a structural formula of [(R2)3SiO 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z (SiO x, y and z are 1-50, R2 is methyl, phenyl or long-chain alkyl with 6-17 carbon atoms, and R3 is methyl, phenyl or long-chain alkyl with 6-17 carbon atoms; the weight ratio of the second organic silicon component to the first organic silicon component is not less than 10:100. The cooling liquid product has high flash point, high dielectric strength, low kinetic viscosity and low dielectric constant, and is especially suitable for application fields such as data centers which have strong demands for low dielectric loss, rapid cooling and safety.

Description

Technical Field

[0001] This invention belongs to the field of coolant technology and relates to a silicone-immersed coolant for data centers and its application method. Background Technology

[0002] Currently, the main types of coolants on the market are synthetic oil, fluorinated fluid, and silicone. Synthetic oil's kinematic viscosity increases dramatically at low temperatures and its flash point is low, which is not conducive to the long-term stable and safe operation of equipment. Fluorinated fluid has a high density, complex production process, and high raw material costs, resulting in an expensive overall price that limits its large-scale application. In addition, fluorinated fluid is a Group 3 carcinogen, posing a significant potential health hazard to workers. Compared with the former two, silicone coolants have stable kinematic viscosity, a high flash point, readily available raw materials, and are temperature-resistant and degradation-resistant, making them safe and healthy.

[0003] Immersion cooling involves completely submerging heat-generating components, such as server CPUs and batteries, in an insulating coolant for direct heat dissipation. During operation, the coolant needs to circulate within a sealed cavity. This cooling method provides more efficient and uniform heat dissipation, which not only helps extend the lifespan of equipment but is also suitable for high-density deployments and better addresses thermal runaway issues. However, with the rapid development of high-density business applications such as artificial intelligence, cloud computing, the Internet of Things, and blockchain, the computing power and complexity required by data centers are increasing rapidly. In order to meet the requirements of faster and more difficult processing, the computing industry has had to improve chip capabilities by "stacking materials." CPU power has increased from 150W to over 300W, and the power of a single GPU used for graphics processing units even exceeds 700W. Operating temperature is an important factor affecting its performance. Signal transmission and operating temperature are important factors affecting its performance. However, the dielectric constant of commonly used immersion coolants is relatively high, which can lead to severe signal attenuation during high-frequency signal transmission. When the signal frequency increases, the high dielectric constant causes the electric field to generate a large polarization effect inside the material, consuming a large amount of signal energy, thereby reducing the signal transmission distance and quality. This problem must be effectively solved as the density increases. Summary of the Invention

[0004] To address the problems existing in the prior art, the present invention provides a silicone-based immersion coolant for data centers:

[0005] The data center silicone immersion coolant includes a first silicone component with the structural formula (CH3)3SiO[(R1)2SiO]. n Si(CH3)3, where n is an integer from 1 to 50, and R1 is a non-reactive hydrocarbon group consisting of methyl, phenyl, or a long-chain alkyl group with 1 to 17 carbon atoms;

[0006] The data center silicone immersion coolant further includes a second silicone component, the second silicone component having the structural formula [(R2)3SiO2]. 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z Where x, y, and z are integers greater than 0, x+y+z are integers from 1 to 50, R2 is a non-reactive hydrocarbon group consisting of methyl, phenyl, or a long-chain alkyl group with 6 to 17 carbon atoms, and R3 is a non-reactive hydrocarbon group consisting of methyl, phenyl, or a long-chain alkyl group with 6 to 17 carbon atoms.

[0007] In the data center silicone immersion coolant, the weight ratio of the second silicone component to the first silicone component is not less than 10:100.

[0008] Furthermore, in the structural formula of the first organosilicon component, n is 5 or 6.

[0009] Furthermore, in the structural formula of the first organosilicon component, R1 is a methyl group.

[0010] Furthermore, the kinematic viscosity of the first organosilicon component at 25°C is ≤50 cst; even further, the kinematic viscosity of the first organosilicon component at 25°C is 4 to 5 cst.

[0011] Furthermore, in the structural formula of the second organosilicon component, x / (y+z) is 1 to 2.

[0012] Furthermore, in the structural formula of the second organosilicon component, x is an integer from 10 to 15.

[0013] Furthermore, in the structural formula of the second organosilicon component, y is an integer from 4 to 6.

[0014] Furthermore, in the structural formula of the second organosilicon component, z is an integer from 1 to 2.

[0015] Furthermore, in the structural formula of the second organosilicon component, R2 is methyl and R3 is methyl.

[0016] Furthermore, the second organosilicon component has the structural formula [(R2)3SiO2]. 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z In the middle, -SiO 1 / 2 The linker is provided by hexamethyldisiloxane.

[0017] Furthermore, the second organosilicon component has the structural formula [(R2)3SiO2]. 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z In the middle, -SiO 3 / 2 The linker is provided by methyltrimethoxysilane.

[0018] Furthermore, the second organosilicon component has the structural formula [(R2)3SiO2]. 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z In the middle, -SiO 4 / 2 The linker is provided by tetraethyl orthosilicate.

[0019] Furthermore, the kinematic viscosity of the second organosilicon component at 25°C is <17 cst; even further, the kinematic viscosity of the second organosilicon component at 25°C is 15-16 cst.

[0020] Furthermore, the dielectric constant of the second organosilicon component is ≤2.2.

[0021] Furthermore, in the data center silicone immersion coolant, the first silicone component has a low kinematic viscosity, but it has a high dielectric constant, low dielectric strength, and low flash point. After adding the second silicone component, when the weight ratio of the second silicone component to the first silicone component is not less than 10:100, the dielectric constant, dielectric strength, and flash point of the product can be improved. However, when the weight ratio of the second component is too high, the kinematic viscosity and production cost will be high. Therefore, the weight ratio of the second silicone component to the first silicone component is (10-40):100.

[0022] Furthermore, the data center silicone immersion coolant is composed of a first silicone component and a second silicone component, wherein the weight percentage of the second silicone component is 9% to 29%.

[0023] Furthermore, the preparation method of the data center organosilicon immersion coolant includes: a first step, taking a first organosilicon component, and adding a second organosilicon component dropwise to the system while maintaining the temperature at 50-60°C, the stirring rate at 400-600 rpm, and the dropping rate at 0.5-1 mL / min.

[0024] Furthermore, the preparation method of the data center silicone immersion coolant also includes: a second step, after the addition is completed, continue to keep warm and stir for 1 to 3 hours, cool down and let stand until the system is clear and there is no layering, to obtain the data center silicone immersion coolant.

[0025] Furthermore, the preparation method of the first organosilicon component includes: a first step of mixing dimethylsiloxane mixed cyclic compound and hexamethyldisiloxane, adding them to a cation exchange resin, and heating to carry out a polymerization reaction.

[0026] Furthermore, in the preparation method of the first organosilicon component, the weight ratio of the dimethylsiloxane mixed cyclic compound to hexamethyldisiloxane is 100:(65-75).

[0027] Furthermore, in the preparation method of the first organosilicon component, the reaction rate may be too slow during the polymerization reaction. Therefore, the temperature of the polymerization reaction is not lower than 60°C. When the reaction temperature is controlled to reach 60°C, the activity of the cation exchange resin as a catalyst is increased and the reaction rate is accelerated. However, if the reaction temperature is too high, the catalyst will be deactivated. Therefore, the temperature of the polymerization reaction is not higher than 90°C. When the reaction temperature is controlled to reach 90°C, the catalyst can still maintain its activity.

[0028] Preferably, in the preparation method of the first organosilicon component, the temperature of the polymerization reaction during heating is 70°C.

[0029] Furthermore, in the preparation method of the first organosilicon component, the weight of the cation exchange resin also affects the rate of polymerization. Therefore, the weight ratio of the cation exchange resin to the dimethylsiloxane mixed ring is not less than 6:100. Preferably, the weight ratio of the cation exchange resin to the dimethylsiloxane mixed ring is 6:100. At this time, the polymerization reaction time is 3-5 hours, and the reaction time is neither too short nor too long.

[0030] Preferably, in the preparation method of the first organosilicon component, the dimethylsiloxane mixed cyclic compound has a total cyclic mass fraction ≥99.5% and contains octamethylcyclotetrasiloxane (D4) (chemical formula [(CH3)2SiO]4) with a mass fraction of not less than 93.31%.

[0031] Furthermore, the preparation method of the first organosilicon component further includes: a second step, after polymerization is completed, removing the cation exchange resin, vacuuming and heating to remove low molecular weight molecules until no low molecular weight molecules are removed.

[0032] Furthermore, in the preparation method of the first organosilicon component, in the second step, during the vacuuming and heating process for desliming, the problem of low molecular weight molecules being difficult to remove completely arises. Therefore, the temperature for vacuuming and heating for desliming is not lower than 150°C. When the temperature reaches 150°C, products with viscosity values ​​lower than the expected viscosity can be removed. However, if the temperature is too high, products with the expected viscosity will be removed, resulting in a poor yield. Therefore, the temperature for vacuuming and heating for desliming is not higher than 200°C. At this temperature, the yield of products with the expected viscosity can reach more than 50%. The expected viscosity value can be designed according to product requirements and adjusted according to the desliming temperature in this step. In this invention, the expected viscosity value is a kinematic viscosity of ≤50 cst at 25°C, preferably ≤5 cst at 25°C, and more preferably 4-5 cst at 25°C.

[0033] Preferably, in the preparation method of the first organosilicon component, in the second step, during the process of vacuuming and heating for descaling, the temperature of vacuuming and heating for descaling is 160°C.

[0034] Preferably, in the preparation method of the first organosilicon component, in the second step, the vacuum degree of the vacuuming and heating for de-vacuuming is -95 to -101 kPa.

[0035] Furthermore, in the preparation method of the first organosilicon component, the second step of removing the cation exchange resin is by filtration.

[0036] Furthermore, the preparation method of the first organosilicon component further includes: a third step, after the desaturation is completed, activated carbon adsorption and vacuum filtration are performed to obtain the first organosilicon component; in this invention, the first organosilicon component is a low-viscosity silicone oil product, preferably, the structural formula of the first organosilicon component is (CH3)3SiO[(R1)2SiO] n Si(CH3)3, n is 5 or 6, R1 is methyl.

[0037] Furthermore, the preparation method of the second organosilicon component includes: a first step of mixing hexamethyldisiloxane, water, an inorganic acid catalyst and a solvent, and then heating to 35-40°C and stirring for 10-30 minutes.

[0038] Furthermore, the solvent is an alcohol-based organic solvent, and the weight ratio of the alcohol-based organic solvent to hexamethyldisiloxane is (8-25):100.

[0039] Preferably, the alcohol organic solvent is selected from methanol and ethanol; more preferably, the alcohol organic solvent is anhydrous ethanol.

[0040] Furthermore, the weight ratio of the inorganic acid catalyst to hexamethyldisiloxane is (5-10):100.

[0041] Preferably, the inorganic acid catalyst is sulfuric acid, acidic clay, or hydrochloric acid; more preferably, the inorganic acid catalyst is hydrochloric acid with a concentration of 36%.

[0042] Furthermore, the weight ratio of water to hexamethyldisiloxane is (10-30):100.

[0043] Preferably, the water is deionized water.

[0044] Furthermore, the preparation method of the second organosilicon component of the data center organosilicon immersion coolant further includes: a second step, after stirring, heating and maintaining the temperature at 35-40°C, adding a mixture of methyltrimethoxysilane and tetraethyl orthosilicate dropwise over 1 hour, and continuing heating to carry out the reaction.

[0045] Furthermore, in the preparation method of the second organosilicon component, the weight ratio of methyltrimethoxysilane in the second step to hexamethyldisiloxane in the first step is (40-60):100.

[0046] Preferably, in the preparation method of the second organosilicon component, the weight ratio of methyltrimethoxysilane in the second step to hexamethyldisiloxane in the first step is 40:100.

[0047] Furthermore, in the preparation method of the second organosilicon component, the weight ratio of tetraethyl orthosilicate in the second step to hexamethyldisiloxane in the first step is (15-30):100.

[0048] Preferably, in the preparation method of the second organosilicon component, the weight ratio of tetraethyl orthosilicate in the second step to hexamethyldisiloxane in the first step is 15:100.

[0049] Preferably, the tetraethyl orthosilicate is tetraethyl orthosilicate containing 28% ethyl acetate.

[0050] Furthermore, during the continued heating process, excessive condensation can lead to gelation. Therefore, the temperature for continued heating should not exceed 70°C. Preferably, the reaction temperature is controlled between 50°C and 70°C, and the reaction time is only 1 to 3 hours. This not only effectively prevents excessive condensation from causing gelation, but also takes into account the reaction rate.

[0051] Furthermore, the preparation method of the second organosilicon component of the data center organosilicon immersion coolant further includes: a third step, after the reaction is complete, separating the oil phase, washing it with water until neutral, heating to remove the solvent and low molecular weight molecules, and obtaining the second organosilicon component with the expected viscosity value.

[0052] Furthermore, in the preparation method of the second organosilicon component, the expected viscosity value is a kinematic viscosity of ≤16 cst at 25°C; preferably, the expected viscosity value is a kinematic viscosity of 15-16 cst at 25°C.

[0053] Furthermore, in the preparation method of the second organosilicon component, the target viscosity product is also removed during the process of heating to remove the solvent and low molecular weight, resulting in a low yield. Unlike the preparation method of the first organosilicon component, in the preparation of the second organosilicon component, the temperature for heating to remove the solvent and low molecular weight is not lower than 110°C and not higher than 130°C. At this temperature, not only can low molecular weight products with lower than expected viscosity be removed and products with expected viscosity be retained as much as possible, but the solvent can also be removed at the same time, reducing the process steps. Finally, the yield of the target viscosity product can reach more than 65%.

[0054] Preferably, in the preparation method of the second organosilicon component, the temperature for heating to remove the solvent and low molecular weight molecules is 110°C.

[0055] Furthermore, in the preparation method of the second organosilicon component, the heating to remove the solvent and low molecular weight is to remove the solvent and low molecular weight by heating and vacuum evaporation.

[0056] This invention also provides a method for applying a data center silicone immersion coolant, comprising: immersing the entire server rack in a sealed tank containing the data center silicone immersion coolant of this invention within a data center cooling system; the coolant directly contacts the entire surface of the server rack, absorbing the heat released by it; then, a driving circulation device circulates the coolant to achieve circulating heat absorption and dissipation; when the coolant flows through an external heat exchanger, the heat in the coolant is released into the environment through the external heat exchanger; the coolant directly contacts the heat-generating components, solving the air conduction bottleneck, avoiding thermal runaway problems, improving safety, extending service life, and realizing heat dissipation management for high-density computing facilities such as server clusters, storage devices, and network equipment.

[0057] Furthermore, in extreme high-power-density scenarios such as supercomputing centers and GPU / TPU clusters, cooling microchannels are set up for high-heat-generating chips such as GPUs and TPUs. The cooling microchannels include a directional liquid flow path. The data center organosilicon immersion coolant of the present invention is loaded into the cooling microchannels. Through the cooling microchannel structure and its directional liquid flow path, the coolant contacts the local surface of the high-heat-generating chip, absorbs the heat released by it, and circulates to achieve heat absorption and dissipation, thereby enhancing local heat dissipation.

[0058] The data center silicone immersion coolant provided by this invention achieves the following beneficial effects compared to existing technologies:

[0059] (1) It has a low dielectric constant, which has little impact on the signal speed, phase delay, energy loss, etc. For high heat-generating chips such as GPU and TPU, it can ensure the integrity of the signal, significantly improve the transmission quality and speed of the signal, overcome the bottleneck of severe signal attenuation caused by excessively high dielectric constant of coolant, and meet the stringent requirements of high frequency and high speed communication for the dielectric properties of materials.

[0060] (2) It has low kinematic viscosity, fast flow rate, and high thermal conductivity, which improves heat dissipation efficiency. For high heat-generating chips such as GPUs and TPUs, it can combine microchannels to significantly enhance the heat dissipation capacity of local heat flux density areas and effectively reduce hot spot temperature.

[0061] (3) It has a high flash point and high thermal decomposition temperature. Combined with the sealed tank, it can immerse the device containing high heat-generating chips such as GPU and TPU in the coolant for a long time to circulate and dissipate heat, achieve overall cooling, and has high safety. At the same time, it can avoid the coolant from being contaminated by the external environment and needing to be replaced frequently, resulting in low maintenance costs.

[0062] (4) It has high dielectric strength and can withstand high electric field strength, and can adapt to the high electric field strength environment of devices with high heat generation chips such as GPU and TPU, and support their stable operation.

[0063] (5) The preparation process is simple and the production yield is high. The preparation route provided by this invention replaces the complex compound synthesis process. It optimizes the existing process and the equipment used to avoid additional production input. It can obtain coolant products with common raw materials with a small amount of input, replace expensive raw materials and avoid waste of raw materials, reduce production input costs and ultimately improve economic benefits. Detailed Implementation

[0064] Preparation of the first organosilicon component

[0065] Raw materials: 100g of mixed methylcyclosiloxane rings, 70g of hexamethyldisiloxane, and 6g of cation exchange resin;

[0066] Steps: S1. Mix hexamethyldisiloxane and methylcyclosiloxane mixed rings; S2. Add cation exchange resin, start stirring, maintain the reaction temperature at 70℃, and polymerize for 4 hours until polymerization is complete; S3. Filter the cation exchange resin, start desorption, vacuum to -100kPa, continuously raise the temperature to 160℃ until no low molecular weight molecules are released, cool down and discharge the material, add activated carbon to the material for adsorption for 3 hours, and vacuum filter.

[0067] Test: Weigh and calculate the yield of the first organosilicon component. Use an electronic scale to weigh the raw materials (mixed methylcyclosiloxane and hexamethyldisiloxane) and the product. Calculate the product yield according to the formula: product yield = product weight / raw material weight, and record it in Table 1.

[0068] Table 1. Weight of raw materials and product, and product yield of the first organosilicon component.

[0069] sample Raw material weight / g Product weight / g Product yield / % First organosilicon component 170 90 51%

[0070] Preparation of the second organosilicon component

[0071] Example 1

[0072] Ingredients: 100g hexamethyldisiloxane, 55g methyltrimethoxysilane, 20g tetraethyl orthosilicate.

[0073] Steps: S1. Mix hexamethyldisiloxane, anhydrous ethanol, hydrochloric acid, and deionized water, start stirring, and maintain the temperature at 40℃ for 30 min; S2. Maintain the temperature at 40℃, and add a mixture of methyltrimethoxysilane and tetraethyl orthosilicate dropwise to the system within 1 h to carry out the reaction. Increase the temperature and react at 60℃ for 2 h; S3. After the reaction is complete, separate the oil phase, neutralize, adsorb, filter, and remove the solvent and low molecular weight substances by vacuum evaporation at 110℃.

[0074] Test: Weigh and calculate the yield of the second organosilicon component in Example 1. Weigh the raw materials (hexamethyldisiloxane, methyltrimethoxysilane, tetraethyl orthosilicate) and the product using an electronic scale. Calculate the product yield according to the formula: product yield = product weight / raw material weight, and record the yield in Table 2.

[0075] Table 2 Weight of raw materials and products, and product yield of the second organosilicon component

[0076] sample Raw material weight / g Product weight / g Product yield / % Example 1 175 115 65%

[0077] Example 2

[0078] The only difference from Example 1 is the weight of the raw materials: 100g of hexamethyldisiloxane, 40g of methyltrimethoxysilane, and 15g of tetraethyl orthosilicate.

[0079] Example 3

[0080] The only difference from Example 1 is the weight of the raw materials: 100g of hexamethyldisiloxane, 60g of methyltrimethoxysilane, and 30g of tetraethyl orthosilicate.

[0081] Test: Take appropriate samples from Examples 1 to 3 to test their performance and record the results in Table 3. The test items and methods are as follows: (1) Kinematic viscosity: Refer to GB / T 265-1988 standard and use the capillary method to test the kinematic viscosity at 25℃; (2) Flash point: Refer to GB / T 3536-2008 standard and use the open cup method to measure the flash point. The lower the flash point, the higher the flammability index of the sample; (3) Dielectric strength: Refer to GB / T 507-1986 standard and use an insulating oil dielectric strength tester to test the dielectric strength; (4) Dielectric constant: Refer to GB / T 1409-2006 standard and use a high and low frequency dielectric constant tester to test the dielectric constant.

[0082] Table 3 Performance test results of samples 1-3 in Examples 1-3

[0083] sample Kinematic viscosity / cSt (25℃) Dielectric constant Flash point / °C Dielectric strength / KV Example 1 16.1 2.1 210 37 Example 2 15.2 2.2 201 35 Example 3 16.6 2.1 213 36

[0084] Preparation of silicone immersion coolant for data centers

[0085] Example

[0086] Raw materials: 100g of the first organosilicon component, 2g of the second organosilicon component;

[0087] Steps: S1. Take the first organosilicon component obtained in the flask, heat it, turn on the stirrer, keep the temperature at 60°C, stir at 500 rpm, and add the second organosilicon component obtained in Example 2 dropwise to the system; S2. After the dropwise addition is completed, continue to keep the temperature and stir for 1 hour, cool down and let stand. The system is clear and there is no layering.

[0088] Example 5

[0089] The only difference from Example 4 is the weight of the raw materials: 100g of the first organosilicon component and 10g of the second organosilicon component.

[0090] Example 6

[0091] The only difference from Example 4 is the weight of the raw materials: 100g of the first organosilicon component and 15g of the second organosilicon component.

[0092] Example 7

[0093] The only difference from Example 4 is the weight of the raw materials: 100g of the first organosilicon component and 20g of the second organosilicon component.

[0094] Example 8

[0095] The only difference from Example 4 is the weight of the raw materials: 100g of the first organosilicon component and 40g of the second organosilicon component.

[0096] Comparative Example 1

[0097] The only difference from Example 4 is the weight of the raw materials: 100g of the first organosilicon component and 0g of the second organosilicon component.

[0098] Test: Take appropriate amounts of samples from Examples 4 to 8 and Comparative Example 1 to test their performance and record the results in Table 4. The test items and methods are as follows: (1) Kinematic viscosity: Refer to GB / T 265-1988 standard and use the capillary method to test the kinematic viscosity at 25℃; (2) Flash point: Refer to GB / T 3536-2008 standard and use the open cup method to test the flash point. The lower the flash point, the higher the flammability index of the sample; (3) Dielectric strength: Refer to GB / T 507-1986 standard and use an insulating oil dielectric strength tester to test the dielectric strength; (4) Dielectric constant: Refer to GB / T 1409-2006 standard and use a high and low frequency dielectric constant tester to test the dielectric constant.

[0099] Table 4 Performance test results of samples from Examples 4-8 and Comparative Example 1

[0100] sample Dielectric constant Kinematic viscosity (25℃) / cts Flash point / °C Dielectric strength / KV Example 4 2.6 5.0 150 28 Example 5 2.3 5.5 156 32 Example 6 2.3 6.1 160 32 Example 7 2.2 6.8 169 33 Example 8 2.2 7.9 178 34 Comparative Example 1 2.8 4.6 150 28

[0101] The performance test results above show that the data center silicone immersion coolant product of this invention has a kinematic viscosity of <8cst at 25℃, a dielectric constant of ≤2.3, a dielectric strength of ≥28KV, and a flash point of >155℃, which meets the standard parameters for immersion coolants for data centers (dielectric constant <2.5, room temperature kinematic viscosity <50cst, dielectric strength >24KV) in the "Technical Requirements and Test Methods for Cooling Liquids in Data Center Liquid Cooling Systems" (industry standard YD / T 3982-2021), and its performance is even better.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit the scope of protection of the present invention. Those skilled in the art should understand that several deductions or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A silicone-immersed coolant for data centers, characterized in that: The data center silicone immersion coolant includes a first silicone component, the first silicone component having the structural formula (CH3)3SiO[(R1)2SiO] n Si(CH3)3, n is 1 to 50, R1 is phenyl or alkyl with 1 to 17 carbon atoms; The data center silicone immersion coolant also includes a second silicone component, the second silicone component having the structural formula [(R2)3SiO2]. 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z , x+y+z is 1 to 50, R2 is methyl, phenyl or a long-chain alkyl group with 6 to 17 carbon atoms, and R3 is methyl, phenyl or a long-chain alkyl group with 6 to 17 carbon atoms; In the data center silicone immersion coolant, the weight ratio of the second silicone component to the first silicone component is (10-40):

100.

2. The data center silicone immersion coolant as described in claim 1, characterized in that: The preparation method of the first organosilicon component includes: First, mixing dimethylsiloxane mixed cyclic compound and hexamethyldisiloxane, adding cation exchange resin, and heating to not less than 60°C to carry out polymerization reaction; Second, removing cation exchange resin, vacuuming and heating to remove low molecular weight molecules until no low molecular weight molecules are removed; Third, performing activated carbon adsorption and vacuum filtration to obtain the first organosilicon component with a kinematic viscosity of 4-5 cst at 25°C.

3. The data center silicone immersion coolant as described in claim 2, characterized in that: In the preparation method of the first organosilicon component, in the second step, the temperature for vacuuming and heating to remove the low temperature is 150~200°C.

4. The data center silicone immersion coolant as described in claim 1, characterized in that: The second organosilicon component has the structural formula [(R2)3SiO] 1 / 2 ] x (R3SiO 3 / 2 ) y (SiO 4 / 2 ) z In the middle, -SiO 1 / 2 The repeating unit is provided by hexamethyldisiloxane, -SiO 3 / 2 The repeating unit is provided by methyltrimethoxysilane, -SiO 4 / 2 The linker is provided by tetraethyl orthosilicate.

5. The data center silicone immersion coolant as described in claim 4, characterized in that: The preparation method of the second organosilicon component includes: First, mixing hexamethyldisiloxane, water, inorganic acid catalyst and alcohol organic solvent, and heating to 35-40°C and stirring for 10-30 min; Second, heating and maintaining the temperature at 35-40°C, and adding a mixture of methyltrimethoxysilane and tetraethyl orthosilicate dropwise over 1 h, and continuing heating to carry out the reaction; Third, separating the oil phase, washing with water until neutral, and heating to not less than 110°C to remove solvent and low molecular weight molecules, to obtain the second organosilicon component with a kinematic viscosity of 15-16 cst at 25°C.

6. The data center silicone immersion coolant as described in claim 5, characterized in that: In the preparation method of the second organosilicon component, the weight ratio of hexamethyldisiloxane in the first step to methyltrimethoxysilane in the second step is 100:(40-60); In the preparation method of the second organosilicon component, the weight ratio of hexamethyldisiloxane in the first step to tetraethyl orthosilicate in the second step is 100:(15-30).

7. The data center silicone immersion coolant as described in claim 5, characterized in that: In the second step of the preparation method of the second organosilicon component, the temperature at which the reaction is continued to be heated is 50-70°C.

8. A method for applying silicone-immersed coolant in a data center, characterized in that: The server rack of the data center is completely immersed in a sealed tank containing the data center silicone immersion coolant as described in any one of claims 1-7, directly contacting the entire surface of the server rack to absorb the heat released by it, and in conjunction with a drive circulation device, it circulates to achieve circulating heat absorption and dissipation.

9. The application method of the data center silicone immersion coolant as described in claim 8, characterized in that: The data center organosilicon immersion coolant of any one of claims 1-7 is filled into the cooling microchannel of the high-heat chip. Through the cooling microchannel and its directional liquid flow path, it contacts the local surface of the high-heat chip, absorbs the heat released by it, and circulates to achieve heat absorption and heat dissipation.