Atomic layer deposition apparatus and method

Abstract

The invention discloses atomic layer deposition equipment and method.The equipment comprises a preloading cavity, a wafer transmission cavity, a process cavity, a wafer support, a transmission mechanism, a detection mechanism and a controller, the preloading cavity, the wafer transmission cavity and the process cavity are sequentially communicated in a sealed mode, and the wafer support is provided with a wafer containing area; the transmission mechanism is used for transmitting a wafer support carrying wafers among the pre-loading chamber, the wafer transmission chamber and the process chamber, and the detection mechanism is arranged in the wafer transmission chamber and is used for detecting the number of the wafers on the wafer support in the wafer transmission process and detecting whether the wafers deviate from the wafer placement area or not. The controller is electrically connected with the transmission mechanism and the detection mechanism, the controller is used for calculating and controlling the heating power of the process chamber and the process gas introduction amount according to the number of the wafers, and the controller is further used for controlling the transmission mechanism to stop transmission when the detection mechanism detects that the wafers deviate from the wafer placement area. According to the invention, power consumption and resource waste can be reduced, and process quality and equipment safety are ensured.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to an atomic layer deposition apparatus and method. Background Technology

[0002] Atomic Layer Deposition (ALD) is a high-precision thin film fabrication technology that enables precise control of the thin film growth process on the surface of different materials with atomic-level accuracy. ALD achieves layer-by-layer deposition of thin films by alternately introducing two different precursor gases and utilizing the principle of surface saturation reaction to promote a self-limiting chemical reaction on the substrate surface.

[0003] The delivery of the wafer plays a crucial role in the entire process. If wafer misalignment or drop occurs, it will affect the process results and may even damage the equipment. Moreover, directly heating at full power and introducing gas at full capacity during the process will lead to a huge waste of power consumption and energy, and pose safety hazards. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention innovatively provides an atomic layer deposition equipment and method that can control the heating power and process gas flow rate according to the number of wafers, reducing power consumption and resource waste, and improving safety; moreover, it can detect whether the wafer is offset from the wafer placement area and respond in a timely manner to ensure process quality and equipment safety.

[0005] To achieve the aforementioned technical objectives, the first aspect of this invention discloses an atomic layer deposition apparatus, comprising a pre-loading chamber, a wafer transport chamber, a process chamber, a wafer support, a transport mechanism, a detection mechanism, and a controller. The pre-loading chamber, the wafer transfer chamber, and the process chamber are sequentially sealed and connected. The wafer holder has wafer placement areas, each area for holding one wafer. The wafer holder loads and unloads wafers in the pre-loading chamber. The transfer mechanism is used to transfer the wafer carrier, which carries the wafer, from the pre-loading chamber through the wafer transfer chamber to the process chamber, and after the process is completed, to transfer the wafer carrier from the process chamber back to the pre-loading chamber through the wafer transfer chamber. The detection mechanism is located within the wafer transport chamber and is used to detect the number of wafers on the wafer carrier and whether the wafers have shifted from the wafer placement area during wafer transport. The controller is electrically connected to the transmission mechanism and the detection mechanism respectively. The controller is used to calculate and control the heating power of the process chamber and the flow rate of process gas according to the number of wafers. The controller is also used to control the transmission mechanism to stop transmission when the detection mechanism detects that the wafer is off-center from the wafer placement area.

[0006] Furthermore, it also includes a heating mechanism and a heating lifting mechanism, wherein the heating lifting mechanism is used to control the heating mechanism to move up and down within the process chamber. The heating mechanism has a heating chamber with an opening at the bottom. The heating mechanism can cover the wafer support carrying the wafer and the end of the ventilation pipe connected to the process chamber inside the heating chamber by making a lifting movement.

[0007] Furthermore, the heating mechanism has multiple anti-collision detection sensors at the bottom periphery of the heating cavity, which are used to detect whether the wafer and wafer holder below it are within the vertical projection range of the heating cavity. The anti-collision detection sensors are electrically connected to the controller, which controls the heating mechanism to stop descending when the anti-collision detection sensors detect that the wafer or wafer holder below it exceeds the vertical projection range of the anti-collision detection sensors.

[0008] Furthermore, the collision avoidance detection sensor is an infrared sensor, an ultrasonic sensor, or a laser sensor.

[0009] Furthermore, the detection mechanism includes a quantity detection module and a position detection module. The quantity detection module includes multiple first sensors, each corresponding to a wafer placement area on the top layer of the wafer carrier. These first sensors can be infrared sensors, ultrasonic sensors, or laser sensors. The position detection module includes multiple position detection units, each corresponding to a wafer placement area on the top layer of the wafer carrier. Each position detection unit includes multiple second sensors arranged around the wafer placement area. The second sensors are infrared sensors, ultrasonic sensors, or laser sensors.

[0010] Furthermore, a support is provided in the process chamber, which is located below the heating mechanism to support the wafer support.

[0011] Furthermore, the transmission mechanism includes a horizontal transmission device and a lifting device. The horizontal transmission device is used to horizontally transmit the wafer holder carrying the wafer, and the lifting device is used to lift the horizontal transmission device to lift the wafer holder carrying the wafer.

[0012] Furthermore, it also includes an alarm, which is electrically connected to the controller, and the controller is used to control the alarm to sound when the wafer is offset from the wafer placement area.

[0013] To achieve the above-mentioned technical objectives, a second aspect of this application provides an atomic layer deposition method using the atomic layer deposition equipment described in the first aspect, comprising the following steps: The transfer mechanism transports the wafer carrier, which carries the wafers, from the pre-loading chamber to the wafer transfer chamber. The detection mechanism detects the number of wafers and transmits this information to the controller. The controller calculates the heating power and ventilation volume based on the number of wafers. The detection mechanism also detects whether the wafers are off-center from the wafer placement area. If they are off-center, the controller controls the transfer mechanism to stop the transfer. If the wafers are not off-center, the transfer mechanism transports the wafer carrier to the process chamber and proceeds to the next step. Based on the calculation results of heating power and gas flow rate, process gas is introduced into the process chamber and the wafer is heated to perform atomic layer deposition process. After the process is completed, the transfer mechanism transports the wafer carrier containing the wafers from the process chamber back to the wafer transfer chamber. The detection mechanism detects the number of wafers and whether the wafers are off-center from the wafer placement area and transmits the detection results to the controller. If the number of wafers does not match the pre-process detection results or the wafers are off-center from the wafer placement area, the controller controls the transfer mechanism to stop the transfer; otherwise, the transfer mechanism transports the wafer carrier back to the pre-loading chamber and proceeds to the next step. Remove the wafer holder containing the wafer from the pre-loading chamber.

[0014] Furthermore, the wafer is heated based on the calculated heating power, specifically including: The anti-collision detection sensor detects whether the wafer and wafer holder are within the vertical projection range of the heating cavity. If so, the heating lifting mechanism controls the heating mechanism to descend, covering the wafer holder carrying the wafer and the end of the ventilation pipe inside the heating cavity for heating and processing; otherwise, the descent of the heating mechanism and heating are stopped. The beneficial effects of this invention are as follows: The atomic layer deposition equipment and method of the present invention can control the heating power and process gas flow rate according to the number of wafers, thereby reducing power consumption and resource waste and improving safety; moreover, it can detect whether the wafer is offset from the wafer placement area and respond in a timely manner to ensure process quality and equipment safety. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the atomic layer deposition apparatus according to an embodiment of the present invention.

[0016] Figure 2 This is a flowchart of the atomic layer deposition method according to an embodiment of the present invention.

[0017] In the picture, 1. Pre-loading chamber; 2. Wafer transfer chamber; 3. Process chamber; 4. Wafer support; 5. Transfer mechanism; 51. Horizontal transfer device; 52. Lifting device; 6. Detection mechanism; 7. Wafer; 8. Heating mechanism; 81. Heating chamber; 9. Heating lifting mechanism; 10. Collision detection sensor; 11. Support; 12. Ventilation pipeline; 13. Process gas system. Detailed Implementation

[0018] The atomic layer deposition apparatus and method provided by the present invention will be explained and described in detail below with reference to the accompanying drawings.

[0019] This embodiment specifically discloses an atomic layer deposition apparatus, such as... Figure 1 As shown, the device includes a pre-loading chamber 1, a wafer transfer chamber 2, a process chamber 3, a wafer support 4, a transfer mechanism 5, a detection mechanism 6, and a controller. The pre-loading chamber 1, the wafer transfer chamber 2, and the process chamber 3 are sequentially sealed and connected. The wafer support 4 has wafer placement areas, each used to place one wafer 7. Preferably, the wafer placement area is a groove. The wafer support 4 can be provided with multiple wafer placement areas arranged vertically. Each layer of wafer placement areas includes multiple wafer placement areas, which can be arranged in rows or arrays. The wafer placement areas in the upper and lower layers are arranged one-to-one, and the vertical projection edges of the wafer placement areas overlap. The wafer holder 4 loads and unloads the wafer 7 in the pre-loading chamber 1. When placing the wafer, the wafer 7 can be placed on the wafer holder 4 by a wafer pick-and-place device (such as a pick-up robot). When removing the wafer, the wafer holder 4 carrying the wafer 7 must first be transferred to the pre-loading chamber 1, and then the wafer 7 together with the wafer holder 4 is taken out from the pre-loading chamber 1.

[0020] The transfer mechanism 5 is used to transfer the wafer carrier 4, which carries the wafer 7, from the pre-loading chamber 1 through the wafer transfer chamber 2 to the process chamber 3, which is the wafer placement process; and after the process is completed, the wafer carrier 4 is transferred from the process chamber 3 back to the pre-loading chamber 1 through the wafer transfer chamber 2, which is the wafer removal process.

[0021] The detection mechanism 6 is set inside the wafer transfer chamber 2 and is used to detect the number of wafers 7 on the wafer support 4 and whether the wafers 7 are offset from the wafer placement area during the transfer of wafers 7.

[0022] The controller is electrically connected to both the transfer mechanism 5 and the detection mechanism 6. The controller calculates and controls the heating power and process gas flow rate of the process chamber 3 based on the number of wafers 7. The controller also controls the transfer mechanism 5 to stop transferring when the detection mechanism 6 detects that the wafer 7 has shifted from the wafer placement area. The detection mechanism 6 performs detection during both wafer pick-up and wafer placement.

[0023] This application, by setting up a detection mechanism 6, can detect the number of wafers 7 and whether the wafers 7 are offset from the wafer placement area, and respond accordingly. It can control the heating power and process gas flow rate based on the number of wafers 7, reducing power consumption and resource waste, and improving safety; moreover, it can detect whether the wafers 7 are offset from the wafer placement area and respond promptly, ensuring process quality and equipment safety. Throughout the entire wafer 7 transfer process, it detects whether wafer 7 has shifted or fallen off; if so, it immediately stops the process, allowing operators to handle the situation promptly and prevent equipment damage.

[0024] The number of wafers 7 is checked during the wafer placement process (i.e., before the process) to calculate the heating power and ventilation volume during the process; the number of wafers 7 is checked during the wafer removal process (i.e., after the process) to determine whether there is any wafer drop or serious misalignment of wafers 7. If so, the transfer is stopped to avoid damage to the equipment.

[0025] During the wafer placement process, the system detects whether wafer 7 has deviated from the wafer placement area and responds promptly. If wafer 7 deviates from the wafer placement area, the transmission is stopped to avoid collisions with the equipment or wafer dropping during subsequent transmission, thus preventing damage to the equipment. During the wafer retrieval process, the system detects whether wafer 7 has deviated from the wafer placement area. If so, the transmission is stopped to avoid damage to the equipment.

[0026] In some optional embodiments, the detection mechanism 6 includes a quantity detection module and a position detection module. The quantity detection module includes multiple first sensors, each corresponding one-to-one with a wafer placement area on the top layer of the wafer carrier 4. Preferably, all the first sensors are positioned at the same location relative to their corresponding wafer placement areas. For example, when the wafer carrier 4 moves to a certain position, all the first sensors are directly facing the center of the wafer placement area to ensure the accuracy of wafer quantity detection. The first sensors are infrared sensors, ultrasonic sensors, or laser sensors. They can detect the quantity of wafers 7 even when multiple layers of wafers 7 are placed on the wafer carrier 4. When multiple wafer placement areas are provided on the wafer carrier 4, the vertical projections of the upper and lower wafer placement areas completely overlap to ensure the accuracy of quantity detection and offset detection. Each first sensor can detect the number of wafers on all wafer placement areas directly below it and transmit the data to the controller. The controller can calculate the sum of the number of wafers detected by all the first sensors to determine the number of wafers placed on the wafer carrier 4. The position detection module includes multiple position detection units, each corresponding one-to-one with a wafer placement area on the top layer of the wafer carrier 4. Each position detection unit includes multiple second sensors arranged around the wafer placement area. The second sensors are infrared sensors, ultrasonic sensors, or laser sensors. Each position detection unit contains at least two second sensors. In practical use, the wafer placement area of ​​the wafer carrier 4 is a circular groove open at both ends. After the wafer 7 is placed in the groove, both sides of the wafer 7 will be outside the wafer placement area. A second sensor is provided on each side of the wafer 7 outside the wafer placement area. Preferably, the second sensors on both sides of the wafer 7 are symmetrically arranged. The second sensors of all position detection units are in the same position relative to their corresponding wafer placement areas. Therefore, during the wafer 7 transfer mechanism 5 transfers the wafer 7, when the wafer carrier 4 moves directly below the position detection module and all the second sensors fail to detect the wafer 7, it indicates that none of the wafers 7 have shifted. If one or more position detection units fail to detect the wafer 7, but some of the second sensors in the remaining position detection units can detect the wafer 7 while others cannot, it indicates that some wafers 7 have shifted. One position detection unit can detect whether the wafers on all layers of the wafer placement area directly below it have shifted. In practice, the probability of the wafer 7 falling off during wafer placement and removal is very small, especially during wafer placement, it almost never happens. During the wafer removal process, comparing the number of wafers detected before and after the process can also determine whether a wafer drop has occurred.

[0027] In some optional embodiments, the atomic layer deposition apparatus of this application further includes a heating mechanism 8 and a heating lifting mechanism 9. The heating lifting mechanism 9 controls the heating mechanism 8 to move up and down within the process chamber 3. The heating mechanism 8 has a heating cavity 81 with a bottom opening. By moving up and down, the heating mechanism 8 can cover the wafer support 4 carrying the wafer 7 and the end of the ventilation pipe 12 connected to the process chamber 3 within the heating cavity 81. Before the process, the heating mechanism 8 can be positioned at the top of the process chamber 3, avoiding the transport path of the wafer 7 and the wafer support 4. During the process, the heating lifting mechanism 9 controls the heating mechanism 8 to descend, so that the heating cavity 81 covers the wafer support 4 and the end of the ventilation pipe 12, forming a relatively sealed space. Process gas is introduced into the heating cavity 81 and heated. The internal space of the heating cavity 81 is smaller than that of the process chamber 3, which can reduce heating energy consumption and reduce the amount of gas introduced, saving resources. After the process is completed, the heating lifting mechanism 9 controls the heating mechanism 8 to rise, so that the wafer support 4 can be removed from the process chamber 3. Both the heating mechanism 8 and the heating lifting mechanism 9 can be electrically connected to the controller, and the controller can control the working status of the heating mechanism 8 and the heating lifting mechanism 9.

[0028] The heating lifting mechanism 9 can be a lifting assembly consisting of a motor and a transmission device, or it can be an electric telescopic rod, a pneumatic telescopic rod, or a hydraulic telescopic rod. The fixed end of the heating lifting mechanism 9 is fixedly connected to the process chamber, and the telescopic end is connected to the heating mechanism 8 to determine the movement of the heating mechanism 8.

[0029] The end of the ventilation pipe 12 located outside the process chamber 3 can be connected to the process gas system 13 to introduce two precursor gases, or to evacuate the process chamber 3 to meet the vacuum requirements.

[0030] Optionally, a support 11 is provided inside the process chamber 3, positioned below the heating mechanism 8 to support the wafer support 4 and improve process safety. During the process, the support 11 is also enclosed within the heating chamber 81. The diameter of the support 11 is smaller than the inner diameter of the heating chamber 81, ensuring that the heating chamber 81 does not contact the support 11 during its raising and lowering process, thus preventing collisions and damage to the equipment and ensuring equipment safety.

[0031] In some optional embodiments, the heating cavity 81 of the heating mechanism 8 is provided with a plurality of anti-collision detection sensors 10 at the bottom periphery. The plurality of anti-collision detection sensors 10 can be set at a preset distance outside the cavity wall of the heating cavity 81, the preset distance can be 1~10 mm, and the plurality of anti-collision detection sensors 10 can be evenly distributed around the heating cavity 81 to detect whether the wafer 7 and wafer support 4 below it are within the vertical projection range of the heating cavity 81. The anti-collision detection sensors 10 are electrically connected to the controller, and the controller is used to control the heating mechanism 8 to stop descending when the anti-collision detection sensors 10 detect that the wafer 7 or wafer support 4 below it exceeds the vertical projection range of the anti-collision detection sensors 10. If the anti-collision detection sensor 10 detects that the wafer 7 and the wafer support 4 are within the vertical projection range of the heating cavity 81, that is, if all the anti-collision detection sensors 10 do not detect any obstacles, it means that the wafer 7 and the wafer support 4 are both within the vertical projection range of the heating cavity 81. After the heating cavity 81 descends, it will not hit the wafer 7 and the wafer support 4. If some of the anti-collision detection sensors 10 detect obstacles, it means that the wafer 7 or the wafer support 4 has shifted relative to the designated position. When the heating mechanism 8 descends, it will hit the wafer 7 or the wafer support 4, which will damage the equipment.

[0032] Furthermore, the collision avoidance detection sensor 10 is an infrared sensor, an ultrasonic sensor, or a laser sensor.

[0033] By setting up an anti-collision detection sensor 10, the position of the wafer after placement is detected before and during the descent of the heating mechanism 8. If an abnormality is found, the heating mechanism 8 can be stopped at any time during the descent to prevent damage to the wafer 7 and to prevent secondary damage to the equipment, so that the operator can handle it in time.

[0034] Furthermore, the transfer mechanism 5 includes a horizontal transfer device 51 and a lifting device 52. The horizontal transfer device 51 is used for horizontally transferring the wafer carrier 4 carrying the wafer 7, and the lifting device 52 is used for lifting the horizontal transfer device 51 to lift the wafer carrier 4 carrying the wafer 7. The horizontal transfer device 51 can be a motor, located on the side of the pre-loading chamber 1 away from the process chamber 3. The output shaft of the motor is connected to a support plate through a transmission device. The motor drive and the transmission device drive the support plate to extend and retract horizontally, so that it extends from the pre-loading chamber 1 and sequentially enters the wafer transfer chamber 2 and the process chamber 3, and then retracts from the process chamber 3 and sequentially enters the wafer transfer chamber 2 and the pre-loading chamber 1. The transmission device can be a lead screw drive mechanism. The support plate can extend directly under the wafer carrier 4 to support the wafer carrier 4. The lifting device 52 can be a lifting assembly consisting of a motor and a lead screw, an electric telescopic rod, a pneumatic telescopic rod, or a hydraulic telescopic rod. The lifting device 52 controls the lifting of the horizontal transmission device 51 by its own extension and retraction, and works with the horizontal transmission device 51 to realize the transmission of the wafer support 4.

[0035] In some optional embodiments, the atomic layer deposition apparatus of this application further includes an alarm, which is electrically connected to a controller. The controller is used to activate the alarm when wafer 7 deviates from the wafer placement area, alerting personnel to respond promptly. The controller can also activate the alarm when the collision detection sensor 10 detects an obstacle. The alarm can be a photoelectric alarm, which sends the alarm information to a host computer for display on a screen.

[0036] The equipment operation process is as follows: The total heat required to heat the entire heating chamber 81 is Q. The total heating energy consists of the overall temperature rise of the wafer support 4, the number and temperature rise of the wafers 7, the temperature rise of the support 11 (if the support 11 is not set, it will not be affected by this part of the temperature rise), the total amount of gas introduced and its temperature rise, as well as the temperature rise of the heating chamber 81 and the entire heat dissipation system in the process chamber 3. Among them, only the number of wafers 7 is a variable in the overall process, and the rest are constants.

[0037] The formula for calculating total calories is: Q = Q casette +n*Q wafer +Q lift +Q Cool +Q gas ; Among them, Q casette Q represents the total heat generated by the entire wafer support 4. casette = C1*M casette *Δt, C1 is the specific heat capacity of the material used in wafer support 4, which is usually a constant (depending on the actual material used); M casette The actual weight of wafer support 4 can be measured; Δt is the temperature difference between the wafer support 4 rising from room temperature to the set temperature; thus, Q is derived.casette The actual heat demand.

[0038] n represents the number of wafers 7, a value measured by the quantity detection module; Q wafer The energy consumed by a single wafer 7 can also be used to derive Q. wafer = C2*M wafer *Δt, where C2 is the specific heat capacity of the material used in wafer 7, and M wafer The actual weight of wafer 7 is given, and Δt is the same temperature as wafer support 4.

[0039] Similarly, Q can be derived. lift = C3*M lift *Δt, where C3 is the specific heat capacity of the material used in support 11, M lift For the actual weight of support 11, Δt is the same temperature as wafer support 4; if support 11 is not provided, then Q lift It is 0.

[0040] Q Cool Q represents the heat carried by the cooling water in process chamber 3. Cool =C 水 *V 水 *T 水 *Δt 水 C 水 V is the specific heat capacity of water. 水 T represents the velocity of water flow. 水 Δt represents the time it takes for water to be turned on during the heating process. 水 This indicates the change in water temperature, from which the energy consumed by the cooling water can be calculated. In actual processes, cooling water is usually used for heat dissipation in the heating chamber 81.

[0041] Q gas Q is the amount of heat required to introduce process gas into heating chamber 81. gas =C 气 *n*V 气 *T 气 *Δt; where C 气 V is the specific heat capacity of the process gas. 气 T represents the flow rate of the process gas introduced. 气 The total time for the process gas to be introduced after it is turned on is represented by Δt, which represents the temperature change of the gas. It is usually consistent with the temperature rise of the heating chamber 81, and then the energy consumed by the overall required gas can be obtained. In summary, Q = C1*M casette *Δt+n*C2*M wafer *Δt+ C3*M lift *Δt +C 水 *V 水 *T 水 *Δt水 + C 气 *n*V 气 *T 气 *Δt, throughout the entire process, only the number of wafers 7, n, is a unique variable. Therefore, by analyzing the changes in power consumption of the heating cavity 81 under different numbers of wafers 7, the energy requirements for different numbers of wafers 7 can be calculated. The controller can automatically adjust the heating power (i.e., the working state of the heating mechanism 8) based on the real-time detected number of wafers 7 to meet the energy requirements under different conditions.

[0042] In addition, since the number of wafers 7 directly affects the introduction of precursor gas during the process, and considering that the precursors currently used are relatively expensive, directly introducing them without considering the reaction would be wasteful. Therefore, while meeting process requirements, a preset range switching algorithm is used to adjust the amount of precursor gas introduced and the reactants. This adjustment algorithm is primarily based on the number of wafers 7. The specific calculation formula is as follows: V gas =n*V gas1 + k*V gas2 ; Among them, V gas2 V represents the gas flow rate that is typically required to be introduced. gas1 Let V be the gas flow rate when entering one wafer 7, n represent the number of wafers 7 being detected, and k represent the temperature change coefficient, where V gas1 V gas2 k is a constant that varies according to the parameters, and the parameter values ​​are obtained based on engineering experience.

[0043] Therefore, the controller can calculate the heating power and process gas flow rate based on the number of wafers according to the above formula, so as to reduce energy consumption and save resources.

[0044] This application also discloses an atomic layer deposition method using the atomic layer deposition equipment described in the above embodiments, such as... Figure 2 As shown, it includes the following steps: S1. The transfer mechanism 5 transfers the wafer carrier 4, which carries the wafer 7, from the pre-loading chamber 1 to the wafer transfer chamber 2. The detection mechanism 6 detects the number of wafers 7 and transmits the information to the controller. The controller calculates the heating power and ventilation volume based on the number of wafers 7. The detection mechanism 6 also detects whether the wafer 7 is offset from the wafer placement area. If it is offset, the controller controls the transfer mechanism 5 to stop the transfer. If the wafer 7 is not offset from the wafer placement area, the transfer mechanism 5 transfers the wafer carrier 4 to the process chamber 3 and proceeds to the next step. The specific process of the transfer mechanism 5 transferring wafers 7 and wafer holders 4 from the pre-loading chamber 1 to the process chamber 3 is as follows: The support plate of the horizontal transfer device 51 is vertically aligned with the wafer holder 4 under the control of the lifting device 52. Then, the telescopic end of the horizontal transfer device 51 extends a certain distance, so that the support plate extends under the wafer holder 4, supporting the wafer holder 4 on the support plate. Then, the support plate of the horizontal transfer device 51 continues to extend under the control of the motor, conveying the wafer holder 4 into the wafer transfer chamber 2. The quantity detection module in the wafer transfer chamber 2 detects the number of wafers 7 on the wafer holder 4, and the position detection unit detects whether the wafers 7 on the wafer holder 4 have shifted. If a misalignment occurs, the horizontal transport device 51 stops working and is handled by the operator. If the wafer 7 on the wafer holder 4 is not misaligned, the telescopic end of the horizontal transport device 51 continues to extend, and the carrier plate transports the wafer holder 4 into the process chamber 3. When the wafer holder 4 is transported to a position above the designated location in the process chamber 3, the lifting device 52 drives the horizontal transport device 51 to descend so that the horizontal transport device 51 contacts the surface of the designated location (such as the surface of the support 11). Then the carrier plate of the horizontal transport device 51 retracts, placing the wafer holder 4 in the designated position in the process chamber 3, such as above the support 11 and below the heating chamber 81 of the heating mechanism 8.

[0045] S2. Based on the calculation results of heating power and gas flow rate, process gas is introduced into process chamber 3 and wafer 7 is heated to perform atomic layer deposition process. Heating wafer 7 according to the calculated heating power includes: The anti-collision detection sensor 10 detects whether the wafer 7 and wafer support 4 are within the vertical projection range of the heating cavity 81. If so, the heating lifting mechanism 9 controls the heating mechanism 8 to descend, covering the wafer support 4 carrying the wafer 7 and the end of the ventilation pipe 12 inside the heating cavity 81 for heating and processing. Otherwise, the descent of the heating mechanism 8 and heating are stopped. During the descent of the heating mechanism 8, the anti-collision detection sensor 10 also monitors in real time to prevent the heating mechanism 8 from hitting the wafer 7 or wafer support 4.

[0046] After the heating mechanism 8 descends, it covers the support 11, wafer holder 4, wafer 7, and the end of the venting pipe 12 within the heating chamber 81. Heating is then performed according to calculations, and a predetermined amount of process gas is introduced for the process. A controller is electrically connected to the heating mechanism 8 to control its heating power. A solenoid valve can be installed on the venting pipe 12 to control its opening and closing. The controller is electrically connected to the solenoid valve, and by controlling the valve's opening and closing, as well as its amplitude, the flow rate and total amount of process gas introduced into the heating chamber 81 can be controlled. The gas is deposited layer by layer on the wafer surface, completing the atomic layer deposition process.

[0047] S3. After the process is completed, the transfer mechanism 5 transfers the wafer carrier 4 carrying the wafer 7 from the process chamber 3 back to the wafer transfer chamber 2. The detection mechanism 6 detects the number of wafers 7 and whether the wafers 7 are offset from the wafer placement area and transmits the detection results to the controller. If the number of wafers 7 does not match the detection results before the process or the wafers 7 are offset from the wafer placement area, the controller controls the transfer mechanism 5 to stop the transfer; otherwise, the transfer mechanism 5 transfers the wafer carrier 4 back to the pre-loading chamber 1 and proceeds to the next step. When the transfer mechanism 5 retrieves the wafer 7 and wafer holder 4 from the process chamber 3, the heating mechanism 8 is first raised by the heating lifting mechanism 9 to avoid affecting the transfer of the wafer holder 4. The heating mechanism 8 maintains its heating state during the raising process until it reaches the top of the process chamber 3 and then stops heating. The carrier plate of the horizontal transfer device 51 extends to below the wafer holder 4, and then the lifting device 52 lifts the horizontal transfer device 51, causing the wafer holder 4 to leave the designated position in the process chamber 3, such as the support 11. The carrier plate of the horizontal transfer device 51 retracts into the wafer transfer chamber 2. Inside the wafer transfer chamber 2, the quantity detection module detects the number of wafers and transmits the information to the controller. The controller determines whether the number of wafers is the same as the number before the process. If they are different, an alarm sounds, notifying the staff to stop transferring the wafers into the pre-loading chamber 1. Inside the wafer transfer chamber 2, the position detection module also detects whether the wafers on the wafer holder 4 have shifted. If they have shifted, an alarm sounds, notifying the staff to stop transferring the wafers into the pre-loading chamber 1. If the number of wafers 7 detected by the inspection unit 6 is the same as the number before the process and there is no deviation, the carrier plate of the horizontal transfer device 51 continues to retract until it moves into the pre-loading chamber 1. The lifting device 52 controls the carrier plate of the horizontal transfer device 51 to descend, placing the wafer support 4 and the wafers 7 into the pre-loading chamber 1.

[0048] S4. Remove the wafer support 4 carrying the wafer 7 from the pre-loading chamber 1 and remove the wafer 7 after atomic layer deposition.

[0049] This application includes risk point detection during equipment operation, which can minimize the consequences of wafer 7 misalignment. Before heating, if wafer 7 is misaligned or wafer support 4 is not in place, maintenance can be notified promptly, ensuring efficient equipment utilization and reducing operational risks. Simultaneously, the number of wafers 7 can be detected during equipment operation, allowing for the calculation of required power consumption and energy savings during normal operation. Furthermore, the detected number of wafers 7 directly affects the flow rate of the required gas, significantly reducing equipment operating costs due to the relatively high cost of precursors.

[0050] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0051] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0052] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0053] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0054] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and simple improvements made on the substantive content of the present invention should be included within the protection scope of the present invention.

Claims

1. An atomic layer deposition apparatus, characterized in that, It includes a pre-loading chamber (1), a wafer transfer chamber (2), a process chamber (3), a wafer support (4), a transfer mechanism (5), a detection mechanism (6), and a controller. The pre-loading chamber (1), the wafer transfer chamber (2), and the process chamber (3) are sequentially sealed and connected. The wafer support (4) is provided with a wafer placement area, each wafer placement area is used to place one wafer (7), and the wafer support (4) loads and unloads wafers (7) in the pre-loading chamber (1). The transmission mechanism (5) is used to transmit the wafer carrier (4) carrying the wafer (7) from the pre-loading chamber (1) through the wafer transmission chamber (2) to the process chamber (3), and after the process is completed, to transmit the wafer carrier (4) from the process chamber (3) back to the pre-loading chamber (1) through the wafer transmission chamber (2). The detection mechanism (6) is located inside the wafer transfer chamber (2) and is used to detect the number of wafers (7) on the wafer support (4) during wafer (7) transfer and whether the wafers (7) are offset from the wafer placement area. The controller is electrically connected to the transmission mechanism (5) and the detection mechanism (6) respectively. The controller is used to calculate and control the heating power and process gas flow rate of the process chamber (3) according to the number of wafers (7). The controller is also used to control the transmission mechanism (5) to stop transmission when the detection mechanism (6) detects that the wafer (7) is offset from the wafer placement area.

2. The atomic layer deposition apparatus according to claim 1, characterized in that, It also includes a heating mechanism (8) and a heating lifting mechanism (9), wherein the heating lifting mechanism (9) is used to control the heating mechanism (8) to move up and down within the process chamber (3). The heating mechanism (8) is provided with a heating cavity (81) with a bottom opening. The heating mechanism (8) can cover the wafer support (4) carrying the wafer (7) and the end of the ventilation pipe (12) connected to the process chamber (3) in the heating cavity (81) by making a lifting movement.

3. The atomic layer deposition apparatus according to claim 2, characterized in that, The heating mechanism (8) has multiple anti-collision detection sensors (10) at the bottom periphery of the heating cavity (81) for detecting whether the wafer (7) and wafer support (4) below it are within the vertical projection range of the heating cavity (81). The anti-collision detection sensor (10) is electrically connected to the controller. The controller is used to control the heating mechanism (8) to stop descending when the anti-collision detection sensor (10) detects that the wafer (7) or wafer support (4) below it exceeds the vertical projection range of the anti-collision detection sensor (10).

4. The atomic layer deposition apparatus according to claim 3, characterized in that, The collision detection sensor (10) is an infrared sensor, an ultrasonic sensor, or a laser sensor.

5. The atomic layer deposition apparatus according to claim 1, characterized in that, The detection mechanism (6) includes a quantity detection module and a position detection module. The quantity detection module includes multiple first sensors, each corresponding to a wafer placement area on the top layer of the wafer support (4). The first sensors are infrared sensors, ultrasonic sensors, or laser sensors. The position detection module includes multiple position detection units, each corresponding to a wafer placement area on the top layer of the wafer support (4). Each position detection unit includes multiple second sensors arranged around the wafer placement area. The second sensors are infrared sensors, ultrasonic sensors, or laser sensors.

6. The atomic layer deposition apparatus according to claim 1 or 2, characterized in that, The process chamber (3) is provided with a support (11), which is located below the heating mechanism (8) and is used to support the wafer support (4).

7. The atomic layer deposition apparatus according to claim 1, characterized in that, The transmission mechanism (5) includes a horizontal transmission device (51) and a lifting device (52). The horizontal transmission device (51) is used to horizontally transmit the wafer support (4) carrying the wafer (7). The lifting device (52) is used to lift the horizontal transmission device (51) to lift the wafer support (4) carrying the wafer (7).

8. The atomic layer deposition apparatus according to claim 1, characterized in that, It also includes an alarm, which is electrically connected to the controller, which is used to control the alarm to sound when the wafer (7) is offset from the wafer placement area.

9. An atomic layer deposition method using the atomic layer deposition apparatus according to any one of claims 1-8, characterized in that, Includes the following steps: The transfer mechanism (5) transfers the wafer carrier (4) carrying the wafer (7) from the pre-loading chamber (1) to the wafer transfer chamber (2). The detection mechanism (6) detects the number of wafers (7) and transmits it to the controller. The controller calculates the heating power and ventilation volume based on the number of wafers (7). The detection mechanism (6) also detects whether the wafer (7) is offset from the wafer placement area. If it is offset from the wafer placement area, the controller controls the transfer mechanism (5) to stop the transfer. If the wafer (7) is not offset from the wafer placement area, the transfer mechanism (5) transfers the wafer carrier (4) to the process chamber (3) and proceeds to the next step. Based on the calculation results of heating power and ventilation volume, process gas is introduced into the process chamber (3) and the wafer (7) is heated to perform atomic layer deposition process; After the process is completed, the transfer mechanism (5) transfers the wafer carrier (4) carrying the wafer (7) from the process chamber (3) back to the wafer transfer chamber (2). The detection mechanism (6) detects the number of wafers (7) and whether the wafers (7) are offset from the wafer placement area and transmits the detection results to the controller. If the number of wafers (7) does not match the detection results before the process or the wafers (7) are offset from the wafer placement area, the controller controls the transfer mechanism (5) to stop the transfer; otherwise, the transfer mechanism (5) transfers the wafer carrier (4) back to the pre-loading chamber (1) and proceeds to the next step. Remove the wafer holder (4) containing the wafer (7) from the pre-loading chamber (1).

10. The atomic layer deposition method according to claim 9, characterized in that, Heating the wafer (7) based on the calculated heating power includes: The anti-collision detection sensor (10) detects whether the wafer (7) and wafer support (4) are within the vertical projection range of the heating cavity (81). If so, the heating lifting mechanism (9) controls the heating mechanism (8) to descend, covering the wafer support (4) carrying the wafer (7) and the end of the ventilation pipe (12) inside the heating cavity (81) for heating and processing; otherwise, the descent and heating of the heating mechanism (8) are stopped.

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