Rapid heat treatment system with cooling system

Abstract

The present disclosure provides a method for peak anneal rapid heat treatment, comprising: controlling, by one or more control devices, a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber; receiving, by the one or more control devices, data indicative of the temperature of the workpiece from the temperature measurement system; monitoring, by the one or more control devices, a temperature of the workpiece relative to the temperature setpoint; controlling, by the one or more control devices, the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint; and controlling, by the one or more control devices, the cooling system to initiate flow of the cooling gas through the workpiece at a rate of about 300 slm or greater based at least in part on the workpiece reaching the temperature setpoint to reduce the t50 peak width of the workpiece.

Description

[0001] This application is a divisional application of Chinese application entitled "Rapid Heat Treatment System with Cooling System", filed on August 17, 2021, with application number 202180003808.3. Technical Field

[0002] This disclosure relates generally to heat treatment systems, and more specifically to rapid heat treatment systems with cooling systems. Background Technology

[0003] As used herein, a heat treatment chamber refers to a system for heating workpieces such as semiconductor workpieces (e.g., semiconductor wafers). Such a system may include a support plate for supporting one or more workpieces and an energy source for heating the workpieces, such as a heating lamp, laser, or other heat source. During heat treatment, the workpieces may be heated under controlled conditions according to a treatment protocol.

[0004] Many heat treatment processes require heating workpieces within a certain temperature range so that various chemical and physical transformations can occur when the workpieces are manufactured into devices. For example, in rapid heat treatment processes, workpieces can be heated to temperatures of approximately 300°C to approximately 1,200°C by an array of lamps over a support plate for a duration typically less than a few minutes. Summary of the Invention

[0005] Aspects and advantages of embodiments of this disclosure will be set forth in part in the description which follows, or may be learned from the description or from practice.

[0006] One example aspect of this disclosure relates to a method for performing rapid heat treatment with peak annealing, comprising: controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber by one or more control devices; receiving data from a temperature measurement system indicating the temperature of the workpiece by one or more control devices; monitoring the temperature of the workpiece relative to a temperature setpoint by one or more control devices; controlling the heat source to stop heating the workpiece by one or more control devices at least in part based on the workpiece reaching the temperature setpoint; and controlling a cooling system to begin flowing cooling gas through the workpiece at a rate of about 300 slm or greater by one or more control devices at least in part based on the workpiece reaching the temperature setpoint, thereby reducing the t50 peak width of the workpiece.

[0007] Another exemplary aspect of this disclosure relates to a cooling system for a rapid heat treatment apparatus, the cooling system comprising: a cover plate; a distribution plate extending axially between a first surface and a second surface, the first surface and the second surface extending perpendicularly to the axial direction, the distribution plate having a plurality of holes extending axially through the distribution plate; a collar axially coupled between the cover plate and the distribution plate, the collar, the cover plate and the distribution plate together defining an internal chamber; and a gas supply unit coupled to the collar to provide cooling gas from a gas source to the internal chamber, wherein each of the plurality of holes in the distribution plate is radially distanced from the center of the distribution plate.

[0008] These and other features, aspects, and advantages of the various embodiments will be better understood by referring to the following description and the appended claims. The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the present disclosure and, together with the specification, serve to explain the relevant principles. Attached Figure Description

[0009] A detailed discussion of embodiments is set forth in the description with reference to the accompanying drawings for those skilled in the art, wherein:

[0010] Figure 1 A rapid heat treatment system according to an example embodiment of the present disclosure is described;

[0011] Figure 2 A cross-sectional view of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is depicted.

[0012] Figure 3 An exploded perspective view of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is depicted.

[0013] Figure 4 A partial perspective view of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is depicted, specifically showing the gas supply section of the cooling system;

[0014] Figure 5 A top-down view of a distribution plate of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is depicted.

[0015] Figure 6 A perspective view depicting the mechanical fasteners of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is shown.

[0016] Figure 7 A bottom perspective view of an example cooling system of a heat treatment system according to an example embodiment of the present disclosure is depicted, specifically showing mechanical fasteners attached to a cover plate of the cooling system;

[0017] Figure 8A partial perspective view of an example cooling system of a heat treatment system according to an exemplary embodiment of the present disclosure is depicted, specifically showing the flexible flange of the cover plate of the cooling system;

[0018] Figure 9 Example temperature-time curves of a heat treatment system according to an example embodiment of the present disclosure are depicted;

[0019] Figure 10 Example temperature-time curves of a heat treatment system according to an example embodiment of the present disclosure are depicted;

[0020] Figure 11 A flowchart depicts an example method according to an example embodiment of the present disclosure; and

[0021] Figure 12 A flowchart depicts another example method according to an example embodiment of the present disclosure. Specific Implementation

[0022] Reference will now be made in detail to embodiments, one or more examples of which are illustrated in the accompanying drawings. The examples are provided by way of explaining the embodiments and not by way of limiting the present disclosure. Indeed, it will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments without departing from the scope or spirit of the present disclosure. For example, features shown or described as part of one embodiment may be used with another embodiment to produce yet another embodiment. Therefore, aspects of the present disclosure are intended to cover such modifications and variations.

[0023] Example aspects of this disclosure relate to thermal processing systems for workpieces, such as semiconductor workpieces (e.g., silicon workpieces), such as rapid thermal processing (RTP) systems. Specifically, example aspects of this disclosure relate to more tightly controlled temperature profiles during thermal processing processes such as spike annealing. A spike annealing process can be a thermal treatment that heats a workpiece to a high temperature within a few seconds or less. For example, a spike annealing process can be used to activate dopants in a workpiece such as a silicon wafer.

[0024] At high temperatures, dopant atoms can diffuse rapidly into the workpiece, with most of this diffusion occurring at the peak annealing temperature required to activate the dopant. As performance demands increase and device dimensions shrink in semiconductor device manufacturing, it may be necessary to precisely control the peak annealing heating profile to subject the workpiece to the temperature conditions required to activate the dopant while limiting dopant diffusion.

[0025] According to an example aspect of this disclosure, the cooling system may be positioned close to a workpiece (e.g., semiconductor material or wafer) configured to be light-heated by light emitted from one or more heat sources (e.g., lamp heat sources, lasers, or any other suitable light source). The cooling system may be configured to supply a cooling gas flow through the workpiece to increase the cooling rate of the workpiece. In some embodiments, the cooling system may provide a cooling gas flow into the processing chamber at a rate of about 300 slm or greater to reduce the t50 peak width of the workpiece during the heat treatment process.

[0026] For example, the cooling system may include a distribution plate positioned axially adjacent to a workpiece support, wherein the distribution plate may have a surface parallel to the workpiece support and perpendicular to the axial direction (e.g., a first surface and a second surface extending perpendicular to the axial direction) and a plurality of holes extending axially through it, wherein each of the plurality of holes in the distribution plate is radially distanced from the center of the distribution plate. The cooling system may also include a cover plate positioned axially adjacent to the distribution plate and opposite to the workpiece support, and a collar axially connected between the distribution plate and the cover plate, such that the collar, distribution plate, and cover plate together define an internal chamber. A gas supply unit of the cooling device may be coupled to the collar to provide cooling gas from a gas source to the internal chamber. The cooling gas supplied to the internal chamber may flow out of the internal chamber through the plurality of holes in the distribution plate and pass through the workpiece surface.

[0027] In some aspects of this disclosure, each of the plurality of holes has the same cross-sectional area. However, in some aspects of this subject matter, the shape of the plurality of holes may vary with different radial distances. For example, in some aspects of this subject matter, the plurality of holes may gradually elongate radially as the radial distance from the center of the distribution plate decreases, while maintaining that each of the plurality of holes extends through the same azimuthal distance.

[0028] Furthermore, in some aspects of this disclosure, the gas supply section can be configured to improve the distribution of gas passing through the distribution plate and thus improve the distribution across the workpiece surface. For example, in some aspects, the gas supply section may have an inlet plate coupled to a collar and extending in an azimuth direction between a first end and a second end of the collar spaced apart by a gap distance, wherein the inlet plate may include a plurality of inlet openings spaced apart in the azimuth direction. In some aspects, the gas supply section may also include a plurality of inlet pipes, wherein each of the plurality of inlet pipes connects a corresponding one of the plurality of inlet openings to a gas source. Furthermore, in some aspects, the gas supply section may include a baffle extending along at least a portion of the gap distance and spaced radially inward from the inlet plate, the baffle having a plurality of diffusion openings. In some aspects, the plurality of diffusion openings of the baffle and the plurality of inlet openings of the inlet plate may be spaced apart in the azimuth direction, alternate in the azimuth direction, or both.

[0029] Furthermore, in some aspects of this disclosure, the cover plate can be clamped to the distribution plate to seal or hermetically seal the internal chambers of the cooling system. For example, in one aspect, the cover plate may include a plurality of flexible flanges, each of which may extend along a corresponding orientation and have an opening for receiving a corresponding mechanical fastener for engaging the cover plate, collar, and distribution plate together. During clamping, the flexible flanges may bend or displace toward the distribution plate to allow the mechanical fasteners to secure the cover plate to the distribution plate and clamp the collar between them.

[0030] Furthermore, in some aspects of this disclosure, at least the distribution plate, cover plate, collar, and gas supply section can be made of quartz. Therefore, a portion of the cooling system that can be made of quartz can be fire-polished, thereby reducing the number of particles that may contaminate the workpiece during annealing, generated by the cooling system.

[0031] In some embodiments, a controllable cooling system may be used in a heat treatment system to reduce peak width associated with a heat treatment process (e.g., a peak annealing process). Peak width can describe the time interval during which a workpiece can be at or above a reference temperature, which can be determined from the peak temperature (T0) of a temperature-time profile (e.g., a peak annealing heating profile). 峰 It is obtained by subtracting the temperature value (e.g., 50K) from the value. For example, a 50° temperature peak width (t50 peak width) is defined as the workpiece surface temperature being higher than (T... 峰 The time interval is -50°. The reduced peak width obtained by using the heat treatment according to the exemplary aspects of this disclosure can allow the heat treatment to achieve efficient annealing cycles at relatively high temperatures, while still reducing undesirable processes such as excessive dopant diffusion.

[0032] In some embodiments, the heat treatment system may include a controller to control the operation (e.g., flow rate) of a cooling system during heat treatment to reduce peak widths associated with the heat treatment process. For example, the controller may control the operation of the cooling system to cause cooling gas to flow over the workpiece at a rate of about 300 standard liters per minute (slm) or greater to reduce the t50 peak width of the workpiece, such that the t50 peak width of the heat treatment process is about 1.8 seconds or less. Furthermore, the controller may be configured to control the workpiece support to rotate the workpiece, at least while the cooling system is causing cooling gas to flow over the workpiece.

[0033] In some embodiments, the controller (e.g., a computer, microcontroller, other control device, etc.) may include one or more processors and one or more storage devices. The one or more storage devices may store computer-readable instructions that, when executed by the one or more processors, cause the one or more processors to perform operations, such as controlling the operation of a cooling system during heat treatment, or other suitable operations as described below.

[0034] One example aspect of this disclosure relates to a method for controlling the operation of a heat treatment system. The method may include activating a heat source to emit light to heat a workpiece for a peak annealing process. The method may include acquiring data indicating the workpiece temperature during peak annealing heating. The method may also include monitoring the temperature of the workpiece relative to a temperature setpoint. Furthermore, the method may include controlling the heat source to stop heating the workpiece, at least in part based on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system, at least in part based on the workpiece reaching the temperature setpoint, to initiate the flow of cooling gas through the workpiece at a rate of about 300 slm or greater to reduce the t50 peak width of the workpiece.

[0035] Another example aspect of this disclosure relates to a method for controlling the operation of a heat treatment system. The method may include activating a heat source to emit light to heat a workpiece for a peak annealing process. The method may include determining the expiration of a time interval following the activation of the heat source during the peak annealing process. The method may include, upon the expiration of the time interval, controlling the heat source to stop heating the workpiece and controlling a cooling system to begin allowing cooling gas to flow through the workpiece at a rate of approximately 300 slm or greater to reduce the t50 peak width of the workpiece.

[0036] For purposes of illustration and discussion, references to “workpiece,” “wafer,” or semiconductor wafer are used to discuss aspects of this disclosure. Those skilled in the art will understand using the disclosure provided herein that exemplary aspects of this disclosure can be used in conjunction with any semiconductor substrate or other suitable substrate. Furthermore, the term “about” is used in conjunction with numerical values ​​to refer to less than ten percent (10%) of the stated value.

[0037] Now refer to the attached diagram, Figure 1 A heat treatment system 100 according to an exemplary embodiment of the present disclosure is depicted. As shown, the heat treatment system 100 may include a processing chamber 105. In some embodiments, the processing chamber 105 may be defined at least partially by quartz windows 107 of the heat treatment system 100. For example, one of the quartz windows 107 may define at least partially the roof of the processing chamber 105, and another quartz window 107 may define at least partially the base plate or bottom surface of the processing chamber 105. In some embodiments, the quartz windows 107 may be doped with hydroxide OH. It should be understood that one or more surfaces defining the processing chamber 105 may be formed of any suitable material. For example, in some embodiments, one or more surfaces defining the processing chamber 105 may be formed of quartz.

[0038] As shown in the figure, the heat treatment system 100 may include a position that can be opened ( Figure 1The door 110 can be moved between an open position and a closed position (not shown) to allow selective access to the processing chamber 105. For example, the door 110 can be moved to an open position to allow the workpiece 120 to be positioned within the processing chamber 105. In some embodiments, the workpiece 120 can be supported at least partially by support pins 130, 132 of the lower quartz window 107. In this way, heat associated with emitting light to the lower quartz window 170 can be transferred to the workpiece 120 via the support pins 130, 132. In some embodiments, the workpiece 120 can be rotated within the processing chamber 105, for example, during a heat treatment process. For example, the support pins 130, 132 can be configured to rotate relative to the lower quartz window 107. Furthermore, once the workpiece 120 is positioned on the support pins 130, 132 of the lower quartz window 107, the door 110 can be moved to a closed position. In some embodiments, when the door 110 is in the closed position, the processing chamber 105 can be sealed from the external environment.

[0039] In some embodiments, one or more surfaces defining the processing chamber 105 may define a gas inlet 140. In this way, process gas supplied from a gas source can flow into the processing chamber 105 through the gas inlet 140. In some embodiments, the process gas may include an inert gas that does not react with the workpiece 120. Alternatively, the process gas may include a reactive gas that reacts with the workpiece 120 to deposit a material layer on the surface of the workpiece 120. For example, in some embodiments, the process gas may include ammonium (NH3) gas. However, it should be understood that the process gas may include any suitable reactive gas. For example, in an alternative embodiment, the reactive gas may include H2 gas.

[0040] The heat treatment system 100 may include one or more heat sources 150 disposed outside a processing chamber 105. For example, the heat sources 150 may be positioned above, below, or both above and below the processing chamber 105. The one or more heat sources 150 may be configured to emit light onto the workpiece 120 during a heat treatment process (e.g., rapid heat treatment or peak annealing). More specifically, during the heat treatment process, a heat source 150 positioned above the processing chamber 105 may be configured to emit light onto the upper surface or side of the workpiece 120, and a heat source 150 positioned below the processing chamber 105 may be configured to emit light onto the lower surface or side of the workpiece 120. The light emitted from the one or more heat sources 150 may raise the temperature of the workpiece 120. In some embodiments, the one or more heat sources 150 may raise the temperature of the workpiece 120 by more than about 500°C within a predetermined time period (e.g., less than 2 seconds).

[0041] It should be understood that one or more heat sources 150 may include any suitable type of heat source configured to emit light. For example, in some embodiments, one or more heat sources 150 may include one or more heating lamps (e.g., linear lamps). In alternative embodiments, one or more heat sources 150 may include one or more lasers configured to emit laser beams onto workpiece 120. It should also be understood that heat sources 150 positioned above processing chamber 105 may be controlled separately from or together with heat sources 150 positioned below processing chamber 105 to perform the heat treatment process.

[0042] In some embodiments, the heat treatment system 100 may include one or more reflectors 152 positioned such that light emitted from one or more heat sources 150 is directed toward or towards the processing chamber 105. More specifically, the reflector 152 may direct light emitted from one or more heat sources 150 toward or towards a corresponding quartz window 107, allowing light to pass through the corresponding quartz window 107 and enter the processing chamber 105. It should be understood that at least a portion of the light entering the processing chamber 105 through the quartz window 107 may be emitted onto the workpiece 120. In this way, as described above, light emitted from one or more heat sources 150 may raise the temperature of the workpiece 120 during heat treatment processes such as rapid heat treatment processes (e.g., peak annealing processes).

[0043] In one embodiment, the heat treatment system 100 may include a temperature measurement system 178 configured to generate and transmit data indicating the temperature of the workpiece 120. The temperature measurement system 178 may include one or more temperature sensors 180. The temperature sensor 180 may include a pyrometer, a thermocouple, a thermistor, or any other suitable temperature sensor or combination of temperature sensors. Depending on the type of sensor, the temperature sensor 180 may be located within or outside the processing chamber 105. For example, if the temperature sensor 180 is a pyrometer, the pyrometer does not need to contact the workpiece 120 and can therefore be located outside the chamber 105. However, if the temperature sensor 180 is a thermocouple, the thermocouple must be in contact with the workpiece 120 and can therefore be located inside the chamber 105. Furthermore, the temperature sensor 180 may be communicatively coupled to a controller 190 via a wired connection, a wireless connection, or both, such that the data indicating the temperature of the workpiece 120 generated by the sensor 180 can be provided to the controller 190.

[0044] According to an example aspect of this disclosure, the heat treatment system 100 includes a cooling system 200, as will be described in more detail below, configured to selectively allow cooling gas from a gas source 214 to flow through the workpiece 120 during heat treatment. A controller 190 can control the operation of the heat source 150 and the cooling system 200 (e.g., the flow rate of the cooling gas flowing through the workpiece 120) during heat treatment to reduce peak widths associated with the heat treatment process. For example, the controller 190 can control the operation of the cooling system 200 such that the heat treatment process has a t50 peak width of about 1.8 seconds or less, such as about 1.5 seconds or less. Furthermore, the controller 190 can control the rotation of the workpiece 120. For example, during heat treatment, such as when operating the cooling system 200, the controller 190 can control a workpiece support (e.g., a support pin) to cause the workpiece 120 to rotate.

[0045] In some embodiments, controller 190 or control device (e.g., computer, microcontroller, other control device, etc.) may include one or more processors and one or more storage devices. The one or more storage devices may store computer-readable instructions that, when executed by the one or more processors, cause the one or more processors to perform operations such as turning heat source 150 on or off, controlling the operation of cooling system 200 during heat treatment, or other suitable operations as described below.

[0046] Turn now Figure 2-8 An example aspect of the cooling system 200 of the heat treatment system 100 is depicted. More specifically, Figure 2 A cross-sectional view of the cooling system 200 is depicted, while Figure 3 An exploded perspective view of the cooling system 200 is depicted. Additionally, Figure 4 A partial perspective view of the cooling system 200 is depicted, specifically showing the gas supply section of the cooling system 200. Furthermore, Figure 5 A top-down view of the distribution plate of the cooling system 200 is shown. Additionally, Figure 6 and Figure 7 The mechanical fasteners of the cooling system 200 are depicted. Furthermore, Figure 8 A partial perspective view of the cooling system 200 is depicted, specifically showing the flexible flange of the cover plate of the cooling system 200.

[0047] like Figure 2As shown, the cooling system 200 includes a cover plate 202, a distribution plate 204, a collar 206, and a gas supply section 208, each of which may be made of quartz. The cover plate 202 extends axially X1 between an upper surface 202A and a lower surface 202B. The cover plate 202 is continuous, such that it has no axial extension through which cooling gas can flow. Similarly, the distribution plate 204 extends axially X1 between an upper surface 204A and a lower surface 204B, wherein the lower surface 204B is axially closer to the support in the processing chamber 105 than the upper surface 204A. Figure 1 The workpiece in ) (e.g., Figure 1 Workpiece 120). At least the lower surface 204B of the distribution plate 204 extends perpendicular to the axial direction X1, such that it is generally parallel to the workpiece surface. Figure 1 ) or workpiece support components 130, 132 ( Figure 1 The supporting plane of the workpiece support 130. Unlike the cover plate 202, the distribution plate 204 has a plurality of holes 210 extending therethrough, as will be described in more detail below. In one embodiment, the holes 210 extend along the axial direction X1. However, in other embodiments, the holes 210 may alternatively extend at an angle relative to the axial direction X1. The cover plate 202 is generally axially adjacent to the distribution plate 204 and positioned relative to the workpiece support 130. Figure 1 ).

[0048] A collar 206 extends radially between an outer side 206A and an inner side 206B. The collar 206 is axially positioned between the lower surface 202B of the cover plate 202 and the upper surface 204A of the distribution plate 204, such that an internal chamber 212 is defined between the radially inner side 206B of the collar 206, the lower surface 202B of the cover plate 202, and the upper surface 204A of the distribution plate 204. A gas supply unit 208 is configured to selectively supply cooling gas from a gas source 214 to the internal chamber 212. The cooling gas supplied to the internal chamber 212 can then flow from the internal chamber 212 through the orifice 210 and through a workpiece supported below the cooling system 200.

[0049] like Figure 3The exploded view of the cooling system 200 specifically shows that the cover plate 202 can be directly connected to the distribution plate 204 via a plurality of mechanical fasteners 216, as will be described in more detail below. Furthermore, the collar 206 has a gap extending along the azimuth direction A1 between a first azimuth end 218A and a second azimuth end 218B. The first and second azimuth ends 218A, 218B are spaced apart by a gap distance D1 along the azimuth direction A1. The gas supply section 208 includes an inlet plate 220 that can be mounted or connected between the first and second azimuth ends 218A, 218B of the collar 206. When mounted, the inlet plate 220 extends along the azimuth direction A1 throughout the gap distance D1 to define at least a portion of the internal chamber 212. However, it should be understood that the inlet plate 220 may alternatively extend linearly between the first and second ends 218A, 218B of the collar. In one aspect, the inlet plate 220 includes a plurality of inlet openings 222 spaced apart along an azimuth direction A1, through which cooling gas is supplied to the inner chamber 212, as will be described in more detail below. In some embodiments, the gas supply section 208 further includes a baffle 226. The baffle 226 is radially inwardly spaced from the inlet plate 220 and extends along at least a portion of the gap distance D1. For example, in some aspects, the baffle 226 is coupled to the radially inward portion of the inlet plate 220 to define at least a portion of the inner chamber 212. In some aspects, the baffle 226 includes a plurality of diffusion openings 228 through which cooling gas supplied through the inlet openings 222 must pass before being received into the inner chamber 212, as will be described in more detail below.

[0050] Turn now Figure 4The gas supply section 208 is configured to uniformly distribute cooling gas through the distribution plate 204. For example, as described above, the inlet openings 222 of the inlet plate 220 are spaced apart along the azimuth direction A1. For example, in some embodiments, the inlet openings 222 may be uniformly spaced along the azimuth direction A1. Furthermore, in some embodiments, the inlet openings 222 may have the same cross-sectional area. Each inlet opening 222 is connected to the cooling gas source 214 via a corresponding inlet pipe 230. More specifically, each inlet pipe 230 is connected at its first end to a corresponding inlet opening in the inlet opening 222 and at its second end to an adapter 232. The adapter 232 is configured to connect the second end of the inlet pipe 230 to the gas source 214. However, it should be understood that in some embodiments, each inlet pipe 230 may be individually connected to the gas source 214 (e.g., via a corresponding adapter or connector). The inlet openings 222 and pipes 230 separate the cooling gas flow from the gas source 214, allowing gas to enter the internal chamber at multiple azimuth locations. In some embodiments, the inlet opening 222 and the pipe 230 uniformly distribute the cooling gas flow from the gas source 214. However, in some embodiments, different pairings of the inlet opening 222 and the pipe 230 can provide different proportions of cooling gas flow from the gas source 214 to the internal chamber. Although five inlet openings 222 and pipes 230 are shown, the gas supply section 208 may include any other suitable number, such as four or fewer, or, for example, six or more.

[0051] Furthermore, in some embodiments, the baffle 226 is positioned radially inside the inlet plate 220 and includes its own diffusion openings 228 as described above. In some aspects, the cross-sectional area of ​​the diffusion openings 228 is smaller and the number of diffusion openings 222 is greater than that of the inlet openings 222, such that the gas flowing through the inlet openings 222 is further separated by the diffusion openings 228. On one hand, the diffusion openings 228 may be positioned at a different orientation from the inlet openings 222. For example, Figure 4 The protrusion 222P of the inlet opening 222 indicates the corresponding azimuth position of the inlet opening 222 relative to the diffuser opening 228. The protrusion 222P of the inlet opening 222 is spaced apart from the diffuser opening 228 along the azimuth direction A1. Furthermore, the protrusion 222P of the inlet opening 222 alternates with the diffuser opening 228 along the azimuth direction A1, such that at least one diffuser opening in the diffuser opening 228 is positioned between each pair of adjacent protrusions 222P along the azimuth direction A1. By offsetting the inlet opening 222 and the diffuser opening 228 along the azimuth direction A1, more turbulence is generated between the inlet plate 220 and the baffle 226, which provides a more uniform distribution of cooling gas through the diffuser opening 228.

[0052] like Figure 4As further shown, on one hand, the inlet plate 220 and the collar 206 have locking features that connect them together to form an airtight seal. More specifically, the inlet plate 220 has a first channel 234A for receiving a first oriented end 218A of the collar 206 and a similar second channel 234B for receiving a second oriented end 218B of the collar 206. On the other hand, the inlet plate 220 also includes a first lip or protrusion 236A that can be received in a first recess 238A formed in the collar 206 near the first oriented end 218A, and a similar second lip or protrusion 236B that can be received in a second recess 238B formed in the collar 206 near the second oriented end 218B. Such locking features 234, 236, and 238 form an airtight seal, such that when the cover plate 202 is connected to the distribution plate 204 with the collar 206 and the inlet plate 220 therebetween, the cooling gas can only enter the internal chamber 212 through the inlet plate 220 and leave the internal chamber 212 through the hole 210 in the distribution plate 204.

[0053] Furthermore, in one embodiment, the baffle 226 is configured to be coupled to the inlet plate 220, as indicated above. Figure 4 As shown. For example, the inlet plate 220 includes a first channel 240A for receiving a first oriented end 242A of the baffle 226 and a similar second channel 240B for receiving a second oriented end 242B of the baffle 226. When the cover plate 202 is connected to the distribution plate 204 with a collar 206, the inlet plate 220 and the baffle 226 therebetween, such channels 240A, 240B can form an airtight seal with the baffle 226, so that cooling gas can only enter the internal chamber 212 through the diffusion opening 228 and exit the internal chamber 212 through the hole 210 in the distribution plate 204.

[0054] Turn now Figure 5 The distribution plate 204 is individually configured to uniformly distribute the cooling gas flowing through it onto the workpiece. For example, each hole 210 in the distribution plate 204 is spaced at a different radial distance from the center C1 of the distribution plate 204. For example, the first hole 210A, the radially innermost hole in the distribution plate 204, is spaced apart from the center C1 by a first distance R1, and the second hole 210B, the radially outermost hole in the distribution plate 204, is spaced apart from the center C1 by a second distance R2. In one embodiment, the holes 210 in the distribution plate 204 spiral outward from the first hole 210A to the second hole 210B with increasingly larger radial distances.

[0055] In some respects, the holes 210 in the distribution plate 204 have the same cross-sectional area. Furthermore, in one respect, the holes 210 extend across the same azimuth distance. To make the holes 210 have the same cross-sectional area and extend across the same azimuth distance, the holes 210 have different shapes. More specifically, as the radial distance from the center C1 of the distribution plate 204 decreases, the holes 210 become radially elongated. For example, as the holes 210 spiral outward away from the first hole 210A, the radial distance extended across each successive hole 210 becomes shorter and shorter until reaching the second hole 210B, which extends across the shortest radial distance. For example, the first hole 210A extends along a first radial distance L1 and the second hole 210B extends along a second radial distance L2, where the first radial distance L1 is greater than the second radial distance L2.

[0056] In addition, the distribution plate 204 has a plurality of mounting holes 250 for receiving mechanical fasteners 216. Figure 3 ) to cover plate 202 ( Figure 3 The mounting hole 250 is installed onto the distribution plate 204. The mounting hole 250 is radially spaced from the center C1 of the distribution plate 204 by a distance RM1, where the radial distance RM1 is greater than the second radial distance L2 where the outermost radial hole 210B is located. In one embodiment, the collar 206, inlet plate 220, and baffle 226 ( Figure 4 The mounting holes 250 are configured to be positioned at a radial distance between the second radial distance L2 and the radial distance RM1. In some embodiments, the mounting holes 250 are evenly spaced along the azimuth direction A1.

[0057] For reference Figure 6-8 As described, in one embodiment, each mechanical fastener 216 is configured as a bayonet pin (hereinafter referred to as "bayonet 216"). Bayonet 216 extends between a first portion 216A at its first end and a second portion 216B at its second end. Figure 6 and 7 As specifically shown, the bayonet 216 further includes a third portion 216C and an optional fourth portion 216D, wherein the third portion 216C is positioned between the first portion 216A and the fourth portion 216D, and the fourth portion 216D is positioned between the third portion 216C and the second portion 216B. Figure 6 As shown, the first part 216A has a first diameter or width DB1, the second part 216B has a second diameter or width DB2, the third part 216C has a third diameter or width DB3, and the fourth part has a fourth diameter or width DB4. The first diameter DB1 is larger than the second diameter DB2, the second diameter DB2 is larger than the third diameter DB3, and the third diameter DB3 is larger than the fourth diameter DB4.

[0058] When the bayonet 216 is in the installed or secured position, the first portion 216A of the bayonet 216 is configured to remain in the cover plate 202 at an opening or recess 260 whose diameter substantially corresponds to the first diameter DB1. Figure 8 Within the cover plate 202, the first portion 216A of the bayonet 216 is configured such that it cannot completely pass through the cover plate 202. Furthermore, the third portion 216C of the bayonet 216 is configured to at least partially extend through the cover plate 202 (e.g., in...). Figure 8 The portion passing through the recess 260 below the cover plate 202 and at least partially passing through... Figure 7 The mounting hole 250 in the distribution plate 204 shown. Furthermore, the fourth portion 216D of the bayonet 216, when present, extends at least partially through... Figure 7 The mounting holes 250 are shown in the distribution plate 204. Additionally, the second portion 216B is configured to abut or abut against the lower surface 204B of the distribution plate 204.

[0059] More specifically, the mounting hole 250 has a first profile portion 250A and a second profile portion 250B. The first profile portion 250A is generally circular and has a diameter or width W1 of a third diameter DB3, which generally corresponds to the third portion 216C of the bayonet. The second profile portion 250B is generally rectangular and intersects the first profile portion 250A, wherein the second profile portion 250B has a width W2 of a width WB1, which generally corresponds to the width of the second portion 216B of the bayonet 216, in a first direction, and a width W3 of a second diameter DB2, which generally corresponds to the width of the second portion 216B of the bayonet 216, in a second direction. The bayonet 216 is configured such that when in a first rotational position ( Figure 8 The bayonet 216 is inserted through the mounting hole 250 such that at least a portion of the second portion 216B of the bayonet 216 and the third and fourth portions 216C and 216D of the bayonet 216 are configured to pass through the first profile 250A and the remainder of the second portion 216B of the bayonet 216 passes through the second profile 250B. Once the bayonet 216 is fully inserted through the mounting hole 250, such that the second portion 216B of the bayonet 216 extends through the mounting hole 250, the bayonet 216 can be rotated from the first rotational position ( Figure 8 Rotate to the second rotation position. Figure 7 This prevents the bayonet 216 from passing through or being removed from the mounting hole 250 without first rotating it back to the first rotation position.

[0060] Specifically, such as Figure 8As shown, when the cover plate 202 is located on the collar 206 but not fastened or connected to the distribution plate 204, the bayonet 216 cannot extend through the mounting hole 250. Therefore, the cover plate 202 includes a plurality of flexible flanges 262 extending along its outer periphery. Each flange 262 extends along a corresponding oriented portion of the cover plate 202. Each flange 262 includes a corresponding opening 260 for receiving the bayonet 216. When it is desired to connect the cover plate 202 to the distribution plate 204, the bayonet 216 can be inserted into the corresponding opening 260 and an external force can be applied in the axial direction X1 to bend or fold the flange to the mounting position (indicated by dashed lines). When the bayonet 216 is rotated to a second rotation position ( Figure 7 When this is done, the corresponding bayonet 216 can then provide the force required to bend or flex the flange into the mounting position. This continuous force helps to seal the internal cavity 212. Figure 2 ), to prevent cooling gas from passing through opening 210 ( Figure 2 ) exit the chamber 212 outside.

[0061] It should be understood that mechanical fastener 216 can be configured as any other suitable mechanical fastener or combination of fasteners, including but not limited to screws, bolts, rivets and / or the like.

[0062] It should also be understood that the cooling system 200 is primarily or entirely made of quartz. For example, in one embodiment, at least the cover plate 202, distribution plate 204, collar 206, inlet plate 220, baffle 226, and inlet pipe 230 each comprise quartz. Furthermore, in some embodiments, the fastener 216 is made of quartz. The quartz components of the cooling system 200 can be fire-polished, thereby reducing the number of particles generated by the cooling system 200 during annealing that could contaminate the workpiece.

[0063] Figure 9 An example temperature-time curve 300 of a heat treatment system 100 according to an example embodiment of the present disclosure is depicted. From Figure 9As can be seen, a peak annealing process occurs during the second time period 320, following the first time period 310. The heating curve 330 (solid curve) can be generated by conventional peak annealing. In conventional peak annealing, one or more heat sources (e.g., heat source 150) emit light to heat the workpiece while monitoring the workpiece temperature relative to a temperature setpoint 334. The temperature setpoint 334 is within approximately 20% of the peak temperature of the heating curve 340 of the heat treatment system 100. The heat sources can be configured to stop emitting light once the workpiece temperature reaches or exceeds the temperature setpoint 334. Conventional peak annealing can have a 50°C (e.g., 50K) peak width (t50 peak width) 332 of the heating curve 330. The heating curve 340 (dashed curve) can be generated by the heat treatment system 100 by controlling the cooling system 200 to begin flowing cooling gas through the workpiece at a rate of 300 slm or greater, at least based on the workpiece temperature reaching or exceeding the temperature setpoint 334. For example, when the temperature of workpiece 120 reaches temperature setpoint 334, the cooling system 200 can be controlled to begin flowing cooling gas through the workpiece. Alternatively, when a second temperature setpoint (not shown) expires, the cooling system 200 can be controlled to begin flowing cooling gas through the workpiece, wherein the second temperature setpoint may be between the first temperature setpoint 334 and the desired peak temperature, or may be lower than the first temperature setpoint 334. The t50 peak width 342 of the heating curve 340 of the heat treatment system 100 using the cooling system 200 is smaller than the t50 peak width 332 of the heating curve 330 of a conventional peak annealing process.

[0064] Figure 10 An example temperature-time curve 400 of a heat treatment system 100 according to an example embodiment of the present disclosure is depicted. From Figure 10As can be seen, a peak annealing process occurs during the second time period 420, following the first time period 410. The heating curve 430 (solid curve) can be generated by conventional peak annealing. In conventional peak annealing, one or more heat sources (e.g., heat source 150) emit light to heat the workpiece, continuously corresponding to a predetermined time interval 420A corresponding to the second time period 420A in which the workpiece can reach its peak temperature. On one hand, the predetermined time interval 420A is in the range of approximately 5 milliseconds to approximately 100 milliseconds. Conventional peak annealing may have a 50°C temperature (e.g., 50K) peak width (t50 peak width) 432 of the heating curve 430. The heating curve 440 (dashed curve) can be generated by the heat treatment system 100 by controlling the cooling system 200 to begin flowing cooling gas through the workpiece at a rate of 300 slm or greater, at least based on the expiration of the predetermined time interval 420A for operating the heat source. For example, when the time interval 420A expires, the cooling system 200 can be controlled to begin flowing cooling gas through the workpiece. Alternatively, when the second time interval (not shown) expires, the cooling system 200 can be controlled to begin allowing cooling gas to flow through the workpiece, wherein the second time interval can begin when the first time interval 420A expires and is in the range of approximately 5 milliseconds to approximately 100 milliseconds. The t50 peak width 442 of the heating curve 340 of the heat treatment system 100 using the cooling system 200 is smaller than the t50 peak width 432 of the heating curve 430 of the conventional peak annealing process.

[0065] Figure 11 A flowchart illustrating an example method (500) according to an exemplary embodiment of this disclosure is provided. Reference will be made by way of example. Figure 1 The method (500) is discussed in relation to the heat treatment system 100. The method (500) can be implemented in any suitable plasma treatment apparatus. Figure 11 The steps are described in a specific order for illustrative and discussion purposes. Those skilled in the art will understand using the disclosure provided herein that the individual steps of any method described herein can be omitted, extended, performed concurrently, rearranged, and / or modified in various ways without departing from the scope of this disclosure. Furthermore, multiple steps (not shown) may be performed without departing from the scope of this disclosure.

[0066] At (502), method 500 may include controlling a heat source to begin heating a workpiece supported on a workpiece support in the processing chamber. For example, controller 190 of heat treatment system 100 may control heat source 150 to begin heating (i.e., emitting light) a workpiece 120 supported on workpiece supports 130, 132 in processing chamber 105.

[0067] At (504), method 500 may further include receiving data indicating the workpiece temperature from a temperature measurement system during the peak annealing process. For example, heat treatment system 100 may include one or more temperature sensors 180 that can generate and transmit data indicating the temperature of workpiece 120.

[0068] Furthermore, at (506), method 500 may include monitoring the temperature of the workpiece relative to a temperature setpoint. For example, the controller 190 of the heat treatment system 100 may access an indicator indicating the temperature setpoint (e.g., Figure 9 The temperature setpoint (334) described in the figure. The temperature setpoint can be within about 20% of the peak temperature of the heating curve associated with the peak annealing heating curve.

[0069] Furthermore, at (508), method 500 may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece temperature reaching a temperature setpoint. For example, when the temperature of workpiece 120 reaches or exceeds the temperature setpoint, controller 190 may control heat source 150 to stop heating workpiece 120 (i.e., emitting light to it).

[0070] Additionally, at (510), the method may include controlling the cooling system, at least in part, based on the workpiece temperature reaching a temperature setpoint, to begin allowing cooling gas to flow through the workpiece at a rate of approximately 300 slm or greater. For example, when the temperature of workpiece 120 reaches or exceeds the temperature setpoint, controller 190 may control the cooling system 200 of the heat treatment system to begin allowing cooling gas to flow through workpiece 120 at a rate of approximately 300 slm or greater to reduce the t50 peak width of the workpiece.

[0071] Figure 12 A flowchart illustrating an example method (600) according to an exemplary embodiment of this disclosure is provided. Reference will be made by way of example. Figure 1 The method (600) is discussed in relation to the heat treatment system 100. The method (600) can be implemented in any suitable plasma treatment apparatus. Figure 12 The steps are described in a specific order for illustrative and discussion purposes. Those skilled in the art will understand using the disclosure provided herein that the individual steps of any method described herein can be omitted, extended, performed concurrently, rearranged, and / or modified in various ways without departing from the scope of this disclosure. Furthermore, multiple steps (not shown) may be performed without departing from the scope of this disclosure.

[0072] At (602), method 600 may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. For example, controller 190 of heat treatment system 100 may control heat source 150 to begin heating (i.e., emitting light) a workpiece 120 supported on workpiece supports 130, 132 in processing chamber 105.

[0073] Furthermore, at (604), method 600 may include determining the expiration of a time interval after the control heat source begins heating the workpiece. For example, the controller 190 of the heat treatment system 100 may determine the time interval (e.g., referring to...). Figure 10 The time interval described (420A) is, for example, the expiration of a time interval in the range of about 5 milliseconds to about 100 milliseconds.

[0074] Furthermore, at (606), method 600 may include controlling a heat source to stop heating the workpiece when the time interval expires. For example, when the time interval expires, the controller 190 of the heat treatment system 100 may control the heat source 150 to stop heating (i.e., emit light to it).

[0075] Furthermore, at (608), method 600 may include controlling the cooling system at least in part based on the expiration of a time interval to begin allowing cooling gas to flow through the workpiece at a rate of about 300 slm or greater. For example, when the time interval expires, controller 190 may control the cooling system 200 of the heat treatment system to begin allowing cooling gas to flow through the workpiece 120 at a rate of about 300 slm or greater to reduce the t50 peak width of the workpiece.

[0076] While the subject matter has been described in detail with reference to specific exemplary embodiments thereof, it should be understood that changes, variations, and equivalents of these embodiments can be readily made by those skilled in the art upon acquiring an understanding of the foregoing. Therefore, the scope of this disclosure is illustrative rather than limiting, and this disclosure does not exclude the inclusion of such modifications, variations, and / or additions to the subject matter, which will be apparent to those skilled in the art.

Claims

1. A method for performing rapid heat treatment with peak annealing, comprising: One or more control devices control a heat source to begin heating the workpiece supported on a workpiece support in the processing chamber; The one or more control devices receive data from the temperature measurement system indicating the temperature of the workpiece; The temperature of the workpiece relative to the temperature setpoint is monitored by the one or more control devices; The heat source is controlled by the one or more control devices to stop heating the workpiece, at least in part, based on the workpiece reaching the temperature setpoint. as well as The cooling system is controlled by one or more control devices to start flowing cooling gas through the workpiece at a rate of about 300 slm or greater, based at least in part on the workpiece reaching the temperature setpoint, in order to reduce the t50 peak width of the workpiece.

2. The method according to claim 1, wherein, The cooling system includes: A distribution plate is positioned axially adjacent to the workpiece support, the distribution plate having a plurality of holes extending axially through the distribution plate, each of the plurality of holes being radially distanced from the center of the distribution plate. A cover plate, axially adjacent to the distribution plate and positioned relative to the workpiece support; A collar, axially connected between the distribution plate and the cover plate, the collar, the distribution plate, and the cover plate together defining an internal chamber; and A gas supply unit, connected to the collar, provides cooling gas from a gas source to the internal chamber. The gas supply unit is controllable to change the supply rate of the cooling gas.

3. A cooling system for a rapid heat treatment apparatus, the cooling system comprising: Cover plate; A distribution plate extends axially between a first surface and a second surface, the first surface and the second surface extending perpendicularly to the axial direction, the distribution plate having a plurality of holes extending axially through the distribution plate; A collar is axially connected between the cover plate and the distribution plate, and the collar, cover plate, and distribution plate together define an internal chamber; as well as A gas supply unit, connected to the collar, provides cooling gas from a gas source to the internal chamber. Each of the plurality of holes in the distribution plate is located at a different radial distance from the center of the distribution plate.

4. The cooling system according to claim 3, wherein, Each of the plurality of holes has the same cross-sectional area.

5. The cooling system according to claim 4, wherein, The plurality of holes gradually elongate radially as the radial distance from the center of the distribution plate decreases, such that each of the plurality of holes extends along the same azimuth distance.

6. The cooling system according to claim 3, wherein, The gas supply unit includes an inlet plate connected to the collar and extending in an azimuth direction between a first end and a second end of the collar at a spaced-apart gap, the inlet plate including a plurality of inlet openings spaced apart in the azimuth direction.

7. The cooling system according to claim 6, wherein, The gas supply unit also includes a plurality of inlet pipes, each of which connects a corresponding inlet opening of the plurality of inlet openings to the gas source.

8. The cooling system according to claim 6, wherein, The gas supply section further includes a baffle that extends along at least a portion of the gap distance and is radially inwardly spaced from the inlet plate, the baffle having a plurality of diffusion openings.

9. The cooling system according to claim 8, wherein, The plurality of diffusion openings of the baffle and the plurality of inlet openings of the inlet plate are spaced apart along the azimuth direction, and The plurality of diffusion openings of the baffle and the plurality of inlet openings of the inlet plate alternate along the azimuth direction.

10. The cooling system according to claim 3, wherein, The cover plate includes a plurality of flexible flanges, each of which extends along a corresponding orientation and has an opening for receiving a corresponding mechanical fastener for connecting the cover plate and the distribution plate together.

11. The cooling system according to claim 3, wherein, The cover plate, the distribution plate, the collar, and the gas supply section are made of quartz material.

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