Chip packaging structure of improved crystal pad and method thereof

Abstract

The invention relates to a chip packaging structure of an improved crystal pad and a method thereof, and aims to improve the electrical connection efficiency and stability between a chip and a carrier plate. The structure mainly comprises a chip unit, at least one crystal pad is arranged on the surface of the chip unit, each crystal pad comprises a welding area and a peripheral area, and the peripheral area surrounds the welding area. One of the core innovations is that the nickel-gold layer directly covers the at least one crystal pad, the nickel-gold layer not only optimizes the electrical connection efficiency, but also provides an excellent anti-oxidation function, thereby protecting the crystal pad from being influenced by environmental factors, and prolonging the service life of the chip packaging structure. In order to realize stable electrical connection between the chip unit and the carrier plate, at least one connection technology is adopted, including but not limited to a direct routing, redistribution layer or direct tinning technology, which not only ensures good electrical connection, but also further improves the overall reliability and efficiency of the structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a chip packaging structure and method with improved die pads. Background Technology

[0002] Currently, the semiconductor packaging technology field involved in this invention has made significant progress over the past few decades. Traditional chip packaging technologies primarily focus on how to effectively connect chips to a carrier board while protecting the chips from physical damage and environmental influences. In these technologies, chips are typically connected to external circuits via pads (PADS), and the design and material selection of these PADS are crucial to the overall performance of the package.

[0003] However, as electronic devices evolve towards higher performance, smaller size, and longer lifespan, existing packaging technologies face new challenges. In particular, traditional die pad covering materials and connection methods are struggling to meet increasingly stringent technical requirements in terms of electrical connection stability, oxidation protection, and overall package reliability. For example, while ordinary metal overlays provide basic electrical connections, they are prone to oxidation when exposed to harsh environments for extended periods, leading to connection failure. Furthermore, traditional connection techniques such as soldering or wire bonding, although widely used, may be insufficient to provide the required performance and reliability in high-density packaging or high-frequency applications.

[0004] Therefore, there is an urgent need for a new chip packaging structure and manufacturing method that can provide better electrical connection performance and stability, while improving chip protection, especially in terms of oxidation resistance, to support the needs of modern high-performance electronic devices.

[0005] The following are several patents related to crystal pads:

[0006] Taiwan, China (111135356) discloses a chip packaging structure with protective layers on the die pads. At least one protective layer is disposed over a peripheral area of ​​at least one die pad to reduce the exposed area of ​​each die pad and to shield the peripheral area of ​​each die pad. The protective layers do not cover a soldering area of ​​each die pad, thus exposing the soldering area. In a crossover configuration, any solder wire crossing between any die pad and a corresponding connector pad on a carrier board will not cross over a second upper space defined by the soldering areas of other die pads. Therefore, any solder wire crossing between any die pad and its corresponding connector pad is more effectively isolated by the protective layers on the peripheral areas of other die pads, which helps increase the product's market competitiveness.

[0007] Taiwan I671534 discloses a method for testing a semiconductor die. The method includes the following steps: charging a die pad of the semiconductor die to a precharge level; stopping the charging of the die pad to detect a time period required for a voltage level of the die pad to change from the precharge level to a reference level, and generating a detection result accordingly; and determining a leakage current of the die pad based on the detection result.

[0008] A US patent (US9691686B2) discloses an embodiment of a semiconductor device with a dummy pad feature adjacent to a contact pad and a method of forming the same. The contact pad may be a contact pad in an integrated fan-out package, wherein the integrated fan-out package includes a molding compound located on the sidewall of a die, and the contact pad is located on the die and the molding compound. The contact pad is electrically connected to the die using one or more multilayer redistribution layers. The dummy pad feature is electrically insulated from the contact pad. In some embodiments, the dummy pad feature partially surrounds the contact pad and is disposed in a corner region of the molding compound, a corner region of the die, and / or an interface region between the die and the molding compound.

[0009] Based on the aforementioned prior art, although existing packaging technologies such as Taiwan Patents 111135356 and 1671534 and US Patent 9691686B2 have made progress in their respective application areas, they still exhibit significant limitations in improving the overall performance of chip packaging, particularly in the stability and protection of electrical connections. These technologies have failed to adequately address the growing demands for high efficiency and high reliability in chip packaging, especially the stringent requirements of modern high-performance electronic devices regarding packaging protection (particularly oxidation resistance) and electrical connection stability.

[0010] Therefore, these limitations of existing technologies highlight the urgent need to develop a novel chip packaging structure that can effectively improve the performance and stability of electrical connections while providing comprehensive chip protection, particularly against oxidation. This invention aims to address the problems unresolved by existing technologies by introducing innovative chip packaging structures and manufacturing methods, thereby providing a more reliable and efficient chip packaging solution for high-performance electronic devices. Summary of the Invention

[0011] To address the aforementioned problems, the main objective of this invention is to provide an improved chip packaging structure with an improved die pad, aiming to overcome many limitations in the prior art, particularly regarding the stability of electrical connections, the protective effectiveness of the die pad, and the reliability of the packaging structure. This invention improves the overall performance and durability of the chip package through a series of innovative structural designs and manufacturing processes, while ensuring high efficiency and cost-effectiveness.

[0012] Therefore, the core of this invention is an improved design of the die pads on the chip unit, wherein each die pad has a soldering area and a peripheral area, and a nickel-gold layer is introduced to directly cover the die pad. This design not only enhances the electrical connection between the die pad and the carrier board, but also significantly improves the protection effect of the die pad through the excellent anti-oxidation properties of the nickel-gold layer, thereby extending the life of the package structure.

[0013] Another object of the present invention is to provide a stable electrical connection between the chip unit and the carrier board using at least one connection technology, including but not limited to direct wire bonding, redistribution layer (RDL) or direct soldering. The selection and application of these technologies, combined with the protection of the nickel-gold layer, ensures high reliability and long-term stability of the connection, especially under harsh application conditions such as high frequency, high speed or high temperature.

[0014] Furthermore, the present invention provides different packaging structure embodiments, including nickel-gold layers fully or partially covering the die pads, and selectively adding protective layers to enhance the protection of the area surrounding the die pads. These embodiments demonstrate the advantages of the present invention in providing flexible packaging solutions that can be tailored and optimized to specific application requirements.

[0015] In summary, the improved chip packaging structure of this invention, through its unique design and technological innovation, effectively overcomes the limitations of prior art, providing a more reliable, efficient, and economical packaging solution. This not only promotes the advancement of packaging technology but also provides significant performance improvements and cost advantages for a wide range of electronic device applications.

[0016] To achieve the above objectives, the main technical means used in this invention are as follows: This invention provides an improved chip packaging structure with a die pad, comprising: a chip unit having a surface, the surface having at least one die pad, each die pad having a soldering area and a peripheral area, the peripheral area surrounding the soldering area; a nickel-gold layer directly covering the at least one die pad; and a carrier board equipped with a plurality of connection pads for electrical connection with the soldering area of ​​the at least one die pad; characterized in that: at least one connection technology is used to achieve the electrical connection between the at least one die pad on the chip unit and the at least one connection pad on the carrier board, to ensure a stable electrical connection between the chip unit and the carrier board, wherein the at least one connection technology includes, but is not limited to, direct wire bonding, redistribution layer, or direct soldering.

[0017] The objectives of this invention and the technical problems it addresses can be further achieved by the following technical measures.

[0018] The crystal pad, the nickel-gold layer, and a protective layer are stacked in sequence, with the protective layer disposed on the peripheral area of ​​the crystal pad.

[0019] A protective layer is directly disposed on the peripheral area of ​​the crystal pad.

[0020] At least one of the crystal pads is made of aluminum.

[0021] At least one of the protective layers on the chip package structure further covers the peripheral area of ​​a portion of the die pad.

[0022] At least one of the protective layers on the chip package structure further covers the peripheral area of ​​all the die pads, and the protective layer fully covers the surface of the chip unit.

[0023] At least one of the protective layers on the chip package structure covers only the peripheral area of ​​one of the die pads.

[0024] To achieve the above-mentioned objectives of the present invention, another method of the present invention employs the following technical solution. A method for manufacturing a chip packaging structure with improved die pads, the method comprising the following steps: Step a: forming at least one die pad on the surface of a chip cell by photolithography and etching processes, each die pad having a soldering area and a peripheral area surrounding the soldering area; Step b: forming a nickel-gold layer on at least one of the die pads by electroplating or chemical vapor deposition to optimize electrical connection performance; Step c: implementing at least one connection technology to achieve electrical connection between at least one die pad on the chip cell and a plurality of connection pads on a carrier, the at least one connection technology being selected from the following combinations: direct wire bonding, redistribution layer formation, and direct solder bonding.

[0025] In the above-described technical solution of the present invention, after step a, spin coating or chemical vapor deposition is applied to form at least one protective layer on the peripheral region of at least one of the crystal pads.

[0026] Compared to conventional technologies, the present invention offers an improved chip packaging structure that significantly enhances the electrical connection performance and stability between the chip and the substrate by directly covering the die pad with a nickel-gold layer. This innovative covering method not only optimizes the quality of the electrical connection but also enhances the overall protection of the chip, particularly providing superior oxidation protection, thereby effectively extending the lifespan of the chip packaging structure. Furthermore, the advanced connection technologies employed in this invention, such as direct wire bonding, redistribution layer (RDL), or direct soldering, further improve the overall reliability and performance of the packaging structure.

[0027] The chip packaging solution of this invention provides high-performance electronic devices with enhanced market competitiveness, enabling end products to meet more stringent performance requirements and longer lifespans. Through the implementation of this invention, manufacturers can produce highly reliable electronic components that meet current and future market demands, thereby maintaining industry leadership in technological innovation and product quality. Attached Figure Description

[0028] Figure 1 This is a first top view of the preferred embodiment of the present invention, showing the chip cell and the layout of the die pads thereon;

[0029] Figure 2a This is a second top view of the preferred embodiment of the present invention, showing the structure of a nickel-gold layer directly covering the crystal pad;

[0030] Figure 2b This is a third top view of the preferred embodiment of the present invention, depicting a structure in which a nickel-gold layer fully covers the crystal pad;

[0031] Figure 2c This is the fourth top view of the preferred embodiment of the present invention, showing the crystal pad structure with a nickel-gold layer covering the welding area and a protective layer covering the surrounding area;

[0032] Figure 3 This is a first cross-sectional view of the preferred embodiment of the present invention, showing the basic cross-sectional structure of the chip unit and the die pad;

[0033] Figure 4a This is a second cross-sectional view of the preferred embodiment of the present invention, showing the nickel-gold layer and the protective layer in the chip packaging structure;

[0034] Figure 4b This is a third cross-sectional view of the preferred embodiment of the present invention, showing the nickel-gold layer and the protective layer in the chip packaging structure;

[0035] Figure 4c This is a fourth cross-sectional view of the preferred embodiment of the present invention, showing the nickel-gold layer and protective layer in the chip packaging structure;

[0036] Figure 4d This is the fifth cross-sectional view of the preferred embodiment of the present invention, showing the nickel-gold layer and the protective layer in the chip packaging structure;

[0037] Figure 5a This is the sixth top view of the preferred embodiment of the present invention, showing the complete packaging structure in which the chip unit and the carrier board are electrically connected by bonding wires;

[0038] Figure 5b This is the seventh top view of the preferred embodiment of the present invention, showing the complete chip package structure including the protective layer and the configuration of the bonding wire connections;

[0039] Figure 6a This is the eighth cross-sectional view of the preferred embodiment of the present invention, showing the position of the nickel-gold layer and the protective layer and their impact on electrical connections;

[0040] Figure 6b This is the ninth cross-sectional view of the preferred embodiment of the present invention, showing the position of the nickel-gold layer and the protective layer and their impact on electrical connections;

[0041] Figure 6c This is the tenth cross-sectional view of the preferred embodiment of the present invention, showing the position of the nickel-gold layer and the protective layer and their influence on the electrical connection;

[0042] Figure 6d This is the eleventh cross-sectional view of the preferred embodiment of the present invention, showing the positions of the nickel-gold layer and the protective layer and their influence on the electrical connection;

[0043] Figure 7a This is the twelfth cross-sectional view of the preferred embodiment of the present invention, showing the chip packaging structure incorporating redistribution layer (RDL) technology;

[0044] Figure 7b This is the thirteenth cross-sectional view of the preferred embodiment of the present invention, showing a chip packaging structure incorporating solder ball technology;

[0045] Figure 8a This is the first process of the preferred embodiment of the present invention;

[0046] Figure 8b This is the second process of the preferred embodiment of the present invention. Detailed Implementation

[0047] To make the objectives, features, and effects of the present invention more apparent and understandable, preferred embodiments of the present invention are specifically listed below to clearly and completely describe the technical solutions of the embodiments of the present invention.

[0048] First, let's introduce a first embodiment of the chip packaging structure and its manufacturing method of the present invention: Please refer to... Figure 8a The flowchart mainly consists of steps a, b, and c. Figure 8a The image shows the overall manufacturing process of the first embodiment, from step a, which is the placement of the die pads, to step b, which is the formation of the nickel-gold layer, to step c, which is the realization of electrical connections. Each step is executed precisely to ensure that the package structure achieves optimal performance and reliability.

[0049] like Figure 1As shown, this embodiment begins with the preparation of the chip cell 10. At least one die pad 20 is disposed on the surface 11 of the chip cell. The die pad 20 includes a bonding area 21 and a peripheral area 22. This step is completed through a fine photolithography and etching process, providing precise positioning and structural basis for the subsequent nickel-gold layer coverage.

[0050] In most applications, the die pad 20 is designed to be flush with or slightly protrude from the chip cell surface 11, without the need for special recesses. However, for specific applications requiring high-density packaging or those with technical requirements to minimize the space between the chip and the package, a special recess design may be employed. Such a design allows the die pad 20 to better protect against mechanical stress, while allowing more chip components to be integrated into a limited space.

[0051] In some high-precision applications of this invention, the die pad 20 may further employ microgroove technology, which allows for more precise positioning and protection of bonding materials, such as gold wires or micro solder balls. This technology not only improves the overall performance of the package but also enhances the reliability of the structure under extreme operating conditions.

[0052] like Figure 2a and Figure 4a As shown, a nickel-gold layer 30 is directly formed on the bonding area 21 of the die pad using electroplating or chemical vapor deposition (CVD) technology. The main function of this layer is to provide optimized electrical connections and oxidation protection, ensuring the reliability and long lifespan of the chip during use.

[0053] Finally, as Figure 5a and Figure 6a As shown, direct wire bonding technology is used to establish an electrical connection between the chip unit and the carrier board 50. The soldering area 21 of the chip pad 20 is still exposed after being protected by the nickel-gold layer 30 to facilitate connection. This ensures both good electrical connection and the protection of the soldering area.

[0054] Specifically, the chip unit 10 is the core of the packaging structure of this invention, containing a semiconductor chip that needs to be packaged and protected. The surface 11 on the chip unit 10 provides a substrate for the subsequent installation of die pads and is a key part for realizing the function of the electronic device. Furthermore, surface 11 refers to the area on the chip unit 10 used to mount die pads 20. This surface is precision-machined to ensure suitable flatness and cleanliness to facilitate subsequent die pad installation and metal layer coverage. Die pads 20, as key interfaces for electrical connections, are directly mounted on the surface 11 of the chip unit. Die pads 20 can be made of aluminum. Each die pad includes two main parts: a soldering area 21 and a peripheral area 22. The soldering area is where electrical connections are made with external connection pads or wires. The soldering area 21 is located in the center of the die pad 20 and is a key area for realizing the electrical connection between the chip and the carrier board 50. The design and material selection of the soldering area are crucial for ensuring the stability and efficiency of electrical connections. Furthermore, the peripheral area 22 surrounds the soldering area 21, providing additional structural support and helping to protect the soldering area from physical damage. In some embodiments, the peripheral area is also used to house a protective layer to enhance the overall protection of the package structure. Finally, the nickel-gold layer 30 directly covers the soldering area 21 of the die pad, providing excellent conductivity and protection, particularly against oxidation. The introduction of this layer significantly improves the overall performance of the chip package, especially in terms of electrical connection efficiency and stability. The manufacturing method described in this embodiment can effectively improve the electrical connection efficiency and stability of the chip package structure, while significantly enhancing the protection of the chip, particularly in preventing oxidation. This improved die pad chip package structure and its manufacturing method provide a high-efficiency, high-reliability chip packaging solution for modern high-performance electronic devices.

[0055] Next, a second embodiment of the chip packaging structure and its manufacturing method of the present invention will be introduced: Please refer to [reference needed]. Figure 8a The flowchart mainly consists of steps a, b, and c. Figure 8a The document demonstrates the overall manufacturing process of the second embodiment, from step a, which involves setting up the die pads, to step b, which involves the full coverage of the nickel-gold layer, and step c, which involves the realization of electrical connections. Each step is executed precisely to ensure that the package structure achieves optimal performance and reliability.

[0056] like Figure 1 As shown, the starting point of this embodiment is to prepare a chip cell 10, on which at least one die pad 20 is formed, the die pad 20 including a soldering area 21 and a peripheral area 22. This step utilizes fine photolithography and etching processes to ensure the correct formation of the die pad.

[0057] Next, as Figure 2b , Figure 4b and Figure 6bAs shown, a nickel-gold layer 30 is formed on the entire die pad 20, including the solder area 21 and the peripheral area 22, using electroplating or chemical vapor deposition (CVD) technology. This comprehensive coverage strategy aims to provide more comprehensive protection, especially against oxidation and other environmental factors, while maintaining good electrical connection performance.

[0058] Finally, based on the specific requirements of the chip packaging structure, an appropriate electrical connection technology is selected. For example... Figure 6b This illustrates the application of the direct wire bonding technology in wire bonding 60. Figure 7a This demonstrates the connection of a redistribution layer structure 70 formed using redistribution layer (RDL) technology; and Figure 7b This demonstrates a package structure using solder ball structure 80 for interconnection. These diverse interconnection technologies provide flexible solutions to meet the needs of different application scenarios, improving interconnection reliability and overall package performance.

[0059] In practice, the same as in the first embodiment will not be described again; the die pad 20 is located on the surface 11 of the chip unit 10 and is the key interface for electrical connection between the internal circuit of the chip and the external carrier board. In this embodiment, the entire surface of the die pad 20, including the soldering area 21 and the peripheral area 22, is fully covered by the nickel-gold layer 30; in addition, the nickel-gold layer 30 covers the entire die pad 20 in this embodiment, including the soldering area 21 and the peripheral area 22. This full coverage design improves the electrical connection efficiency and stability of the chip package, while providing strong anti-oxidation protection; furthermore, the carrier board 50 provides physical support for the chip unit and contains multiple connection pads 51, which are used to form electrical connections with the die pad 20 on the chip unit 10. In this embodiment, the carrier board 50 serves as a bridge connecting the chip to external circuitry. The connection pad 51, located on the carrier board 50, is a key point for the electrical connection between the carrier board 50 and the chip unit 10. The bonding wire 60 is a thin metal wire used to achieve the electrical connection between the chip unit 10 and the carrier board 50. During the packaging process, the bonding wire 60 connects the soldering area 21 on the chip to the connection pad 51 on the carrier board using soldering technology, forming a stable electrical path. The bonding wire not only provides a transmission channel for electrical signals but also plays a mechanical support role, ensuring the stability and reliability of the connection between the chip and the carrier board. The redistribution layer structure 70 is a micro-conductive path formed on the chip or package surface, used to reconfigure the electrical connection points on the chip to align with the connection pad 51 on the carrier board. This allows for more flexible packaging design, effectively solving wiring challenges in high-density packaging, improving overall packaging performance, and reducing package size. Finally, the solder ball structure 80 is a common connection component in ball grid array (BGA) packaging, composed of tiny solder balls, used to form physical and electrical connections between the chip unit 10 and the carrier board 50. Solder balls offer a high-density interconnect solution, enabling a large number of input / output connections while maintaining package miniaturization. This interconnect structure is widely used in package designs requiring high interconnect density due to its excellent electrical performance and mechanical stability.

[0060] A third embodiment of the chip packaging structure and its manufacturing method of the present invention: Please refer to the following: Figure 8b The flowchart mainly consists of steps a, b, b' and c. Figure 8b The document demonstrates the overall manufacturing process of the third embodiment, with step a being the placement of the die pads, step b being the covering of the nickel-gold layer, step b' being the formation of the protective layer, and step c being the realization of the electrical connections. Each step is executed precisely to ensure that the packaging structure achieves optimal performance and reliability.

[0061] like Figure 1As shown, the starting point of this embodiment is to prepare a chip cell 10, on which at least one die pad 20 is formed, the die pad 20 including a soldering area 21 and a peripheral area 22. This step utilizes fine photolithography and etching processes to ensure the correct formation of the die pad.

[0062] like Figure 2c As shown, next, a nickel-gold layer 30 is directly formed on the bonding area 21 and the surrounding area 22 of the crystal pad. This step uses electroplating or chemical vapor deposition (CVD) technology. The addition of the nickel-gold layer not only optimizes the electrical connection performance, but also provides strong anti-oxidation protection.

[0063] After the nickel-gold layer is formed, such as Figure 2c and Figure 4c As demonstrated, a protective layer 40 is formed on the nickel-gold layer 30 on the peripheral region 22 of the die pad using spin coating or chemical vapor deposition (CVD) technology. This protective layer 40 helps reduce the exposed area of ​​the die pad 20, thereby providing additional physical protection for the peripheral region of the die pad 20 and reducing the potential damage to the chip from environmental factors.

[0064] Ultimately, as Figure 5b and Figure 6c As shown, appropriate electrical connection techniques such as direct wire bonding, redistribution layer structures, or solder balls are used to achieve electrical connections between the chip unit and the carrier board 50. This step ensures that the electrical connections of the chip package structure are not only stable and reliable, but also maintain high efficiency.

[0065] Generally, the soldering area 21 is located on the die pad 20 and is a key area directly used for electrical connection with the connector pad 51 on the carrier. In this embodiment, the soldering area is covered by a nickel-gold layer 30 to improve the stability of the connection and its oxidation resistance. The peripheral area 22 surrounds the soldering area 21, providing additional physical support. In this embodiment, the peripheral area 22 is also covered by a nickel-gold layer 30, and a protective layer 40 is further formed on it to enhance the overall protection capability of the package structure. The protective layer 40 is an additional protective layer formed on top of the nickel-gold layer 30 on the peripheral area 22, designed to provide stronger physical and chemical protection, especially against environmental factors such as moisture and contaminants. The protective layer 40 is formed by spin coating or chemical vapor deposition (CVD) technology.

[0066] Finally, a fourth embodiment of the chip packaging structure and its manufacturing method of the present invention is introduced: Please refer to [reference needed]. Figure 8b The flowchart mainly consists of steps a, b, b' and c. Figure 8bThe document demonstrates the overall manufacturing process of the third embodiment. Step a is the placement of the die pads, step b is the covering of the nickel-gold layer, step b' is the formation of the protective layer, and step c is the realization of electrical connections. From the placement of the die pads to the formation of the nickel-gold layer and the protective layer, and then to the completion of electrical connections, each step is executed precisely to ensure that the performance and reliability of the packaging structure reach the optimal state.

[0067] like Figure 1 As shown, the manufacturing of the chip package begins with the preparation of the chip cell 10, on which a die pad 20 is disposed on the surface 11, including a soldering area 21 and a peripheral area 22. This step utilizes precise photolithography and etching techniques to form the die pad, providing a foundation for subsequent metal layer coverage.

[0068] like Figure 1 As shown, a die pad 20 is first formed on the surface 11 of the chip unit 10. The die pad includes a bonding area 21 and a peripheral area 22. The die pad structure is precisely formed through photolithography and etching processes to ensure the accurate execution of subsequent cover processes.

[0069] Next, as Figure 2c As demonstrated, a nickel-gold layer 30 is directly formed on the solder area 21 of the die pad using electroplating or chemical vapor deposition (CVD) technology. This step focuses on covering the solder area, aiming to optimize the electrical connection performance and protection of this area.

[0070] Subsequently, as Figure 2c and Figure 4d As shown, step b' involves forming a protective layer 40 on the peripheral region 22 of the crystal pad. This protective layer is achieved by spin coating or chemical vapor deposition (CVD) technology, with the aim of providing additional physical and chemical protection, especially for the peripheral region of the crystal pad, to enhance its barrier against environmental factors.

[0071] Finally, as Figure 5b and Figure 6d As shown, appropriate connection technologies, such as direct wire bonding, redistribution layer structures, or solder balls, are selected to achieve electrical connections between the chip unit and the carrier board 50. In this embodiment, the nickel-gold layer 30 on the soldering area 21 provides excellent electrical connection performance and stability, while the protective layer 40 on the peripheral area 22 further enhances the overall protection of the package structure.

[0072] This invention focuses on improving chip packaging structures and their manufacturing methods, aiming to enhance the electrical connection performance and stability between the chip and the substrate. The technology involves directly covering the die pads of the chip unit with a nickel-gold layer to optimize electrical connections and provide superior oxidation protection, thereby extending package lifespan. Innovations include nickel-gold layer coverage of the die pad soldering areas, combined with advanced connection technologies such as direct wire bonding, redistribution layers (RDLs), or direct soldering. These improvements not only enhance connection reliability but also strengthen overall protection against environmental factors, meeting the stringent packaging technology requirements of modern high-performance electronic devices.

[0073] Therefore, the effectiveness of this invention differs from the general improvement of chip packaging structure using crystal pads. It is a first in the crystal pad manufacturing process and meets the requirements for an invention patent.

[0074] It should be reiterated that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A chip packaging structure with an improved die pad, comprising: A chip cell has a surface, the surface having at least one pad, each pad having a soldering region and a peripheral region, the peripheral region surrounding the soldering region; A nickel-gold layer is directly applied to at least one of the aforementioned crystal pads; A carrier board equipped with a plurality of connection pads for electrical connection with the soldering area of ​​at least one of the crystal pads; The feature is that at least one connection technology is used to achieve an electrical connection between at least one die pad on the chip unit and at least one connection pad on the carrier board, so as to ensure a stable electrical connection between the chip unit and the carrier board, wherein the at least one connection technology includes, but is not limited to, direct wire bonding, redistribution layer or direct soldering.

2. The improved die pad chip packaging structure as described in claim 1, characterized in that: The crystal pad, the nickel-gold layer, and a protective layer are stacked in sequence, with the protective layer disposed on the peripheral area of ​​the crystal pad.

3. The improved die pad chip packaging structure as described in claim 1, characterized in that: A protective layer is directly disposed on the peripheral area of ​​the crystal pad.

4. The improved die pad chip packaging structure as described in claim 1, characterized in that: At least one of the crystal pads is made of aluminum.

5. The improved die pad chip packaging structure as described in claim 1, characterized in that: At least one of the protective layers on the chip package structure further covers the peripheral area of ​​a portion of the die pad.

6. The improved die pad chip packaging structure as described in claim 1, characterized in that: At least one of the protective layers on the chip package structure further covers the peripheral area of ​​all the die pads, and the protective layer fully covers the surface of the chip unit.

7. The improved chip packaging structure with a die pad as described in claim 1, characterized in that: At least one of the protective layers on the chip package structure covers only the peripheral area of ​​one of the die pads.

8. A method for manufacturing a chip packaging structure with improved die pads, the method comprising the following steps: Step a: On the surface of a chip cell, at least one crystal pad is formed by photolithography and etching processes. Each crystal pad has a bonding area and a peripheral area surrounding the bonding area. Step b: Form a nickel-gold layer on at least one of the said crystal pads by electroplating or chemical vapor deposition to optimize electrical connection performance; Step c: Implement at least one connection technology to achieve an electrical connection between at least one of the die pads on the chip unit and a plurality of connection pads on a carrier board, wherein the at least one connection technology is selected from the following combinations: direct wire bonding, redistribution layer formation, and direct soldering connection.

9. The method for manufacturing a chip packaging structure with an improved die pad as described in claim 8, wherein after step a, spin coating or chemical vapor deposition is applied to form at least one protective layer on the peripheral region of at least one of the die pads.

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