Semiconductor circuit

Abstract

The invention relates to the technical field of semiconductors, and provides a semiconductor circuit which comprises a metal substrate, a metal connecting column, a glass fiber substrate and a pin, the metal connecting column is vertically arranged on the metal substrate, the glass fiber substrate is arranged at the upper end of the metal connecting column, the glass fiber substrate is fixedly connected with the metal substrate through the metal connecting column, and the pin is fixedly connected with the metal substrate through the metal connecting column. Two ends of the metal connecting column are electrically connected with the glass fiber substrate and the metal substrate respectively, the pins are electrically connected with the metal substrate and the glass fiber substrate respectively, the metal connecting column and the lead frame are arranged, the glass fiber substrate circuit and the metal substrate circuit are electrically connected through the metal column, and meanwhile the metal column can play a role in supporting the glass fiber plate. And the glass fiber substrate is supported.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a semiconductor circuit. Background Technology

[0002] Semiconductor circuits, as power drive products integrating power electronics and integrated circuit technologies, have the core advantage of highly integrating power switching devices with high-voltage drive circuits, and incorporating multiple fault detection circuits such as overvoltage, overcurrent, and overheating. Compared to traditional discrete solutions, these circuits, with their outstanding characteristics of high integration and high reliability, are particularly suitable for frequency converters and various inverter power supplies that drive motors, demonstrating significant application value in fields such as variable frequency speed control, metallurgical machinery, electric traction, servo drives, and variable frequency home appliances.

[0003] Currently, semiconductor circuits with built-in dual substrates generally use brackets to fix the dual substrates. This not only makes production difficult and the process complex, but also requires high precision in bracket placement. Otherwise, adhesive overflow can easily occur in the installation gap between the bracket and the substrate. Therefore, there is an urgent need to improve the dual substrate design. Summary of the Invention

[0004] This application aims to improve at least one technical problem in the background art.

[0005] This application provides a semiconductor circuit, which includes a metal substrate, metal connecting pillars, a fiberglass substrate, and pins; The metal connecting posts are vertically arranged on the metal substrate; A fiberglass substrate is disposed on the upper end of the metal connecting post. The fiberglass substrate is fixedly connected to the metal substrate through the metal connecting post, and the two ends of the metal connecting post are electrically connected to the fiberglass substrate and the metal substrate, respectively. The pins are electrically connected to the metal substrate and the fiberglass substrate, respectively.

[0006] The semiconductor circuit provided in this application has at least the following advantages: by providing metal connecting pillars, the glass fiber substrate circuit and the metal substrate circuit are electrically connected through the metal pillars, which on the one hand supports the glass fiber substrate to achieve fixation; on the other hand, it serves as a conductive medium to connect the circuit above the glass fiber substrate and the circuit above the metal substrate, without the need for additional support.

[0007] According to some technical solutions of this application, the metal substrate includes a metal substrate, a first circuit wiring layer and a plurality of first electronic components, wherein the first circuit wiring layer is disposed on the metal substrate and the plurality of first electronic components are disposed on the first circuit wiring layer.

[0008] According to some technical solutions of this application, the first electronic component includes a high-power component, and the high-power component is provided with a heat sink.

[0009] According to some technical solutions of this application, the metal substrate is further provided with an insulating layer and a copper foil layer, the first circuit wiring layer is formed by etching the copper foil layer, and the insulating layer is disposed between the first circuit wiring layer and the metal substrate.

[0010] According to some technical solutions of this application, the metal substrate further includes a protective layer, which covers the surface of the circuit wiring layer.

[0011] According to some technical solutions of this application, the surface of the fiberglass substrate is provided with a second circuit wiring layer and a plurality of second electronic components, and the plurality of second electronic components are disposed on the second circuit wiring layer.

[0012] According to some technical solutions of this application, it also includes multiple bonding wires, and the second circuit wiring layer and the multiple second electronic components are connected through the bonding wires.

[0013] According to some technical solutions of this application, the bonding wire is made of one of the following materials: gold, aluminum, and copper.

[0014] According to some technical solutions of this application, it also includes a package body, which covers the metal substrate, the metal connecting post, and the fiberglass substrate, and one end of the support leg extends outward from the package body.

[0015] According to some technical solutions of this application, the encapsulation body is a mixed resin. Attached Figure Description

[0016] Figure 1 This is an internal structure diagram of a semiconductor circuit provided in an embodiment of this application; Figure 2 This is a package structure diagram of a semiconductor circuit provided in an embodiment of this application; Figure 3 A schematic diagram of the packaging structure of a semiconductor circuit provided in an embodiment of this application from another angle; Figure 4 A three-dimensional structural schematic diagram of a semiconductor circuit provided in an embodiment of this application; In the attached diagram: 100 - metal substrate; 110 - metal base material; 120 - insulating layer; 130 - copper foil layer; 140 - protective layer; 150 - first electronic component; 170 - heat sink; 200 - metal connecting post; 300 - glass fiber substrate; 310 - second electronic component; 320 - bonding wire; 400 - lead; 500 - package. Detailed Implementation

[0017] The following description provides specific application scenarios and requirements for this specification, intended to enable those skilled in the art to make and use the contents of this specification. Various partial modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of this specification. Therefore, this specification is not limited to the embodiments shown, but rather to the widest scope consistent with the claims.

[0018] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not restrictive. For example, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” used herein may also include the plural forms. When used in this specification, the terms “comprising,” “including,” and / or “containing” mean that the associated integers, steps, operations, elements, and / or components are present, but do not exclude the presence of one or more other features, integers, steps, operations, elements, components, and / or groups, or that other features, integers, steps, operations, elements, components, and / or groups may be added to the system / method.

[0019] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," and "bottom," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to be constructed and operated in a specific orientation.

[0020] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0021] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0022] In this specification, "X includes at least one of A, B, or C" means that X includes at least A, or X includes at least B, or X includes at least C. That is, X may include only one of A, B, and C, or any combination of A, B, and C, as well as other possible content / elements. The arbitrary combination of A, B, and C can be A, B, C, AB, AC, BC, or ABC.

[0023] In this specification, "multiple" refers to two or more.

[0024] In this specification, unless explicitly stated otherwise, the relationships between structures can be direct or indirect. For example, when describing "A is connected to B," unless it is explicitly stated that A and B are directly connected, it should be understood that A can be directly connected to B or indirectly connected to B. Similarly, when describing "A is on top of B," unless it is explicitly stated that A is directly above B (AB is adjacent and A is above B), it should be understood that A can be directly above B or indirectly above B (AB is separated by other elements, and A is above B). And so on. It should also be understood that the accompanying drawings are not to scale.

[0025] The following is combined Figures 1 to 4 Embodiments of the present invention will be described.

[0026] Existing technical solutions mostly use brackets to fix the dual substrates. However, this method not only increases production difficulty and prolongs the process, but also easily causes adhesive overflow problems due to the installation gap between the bracket and the substrate, resulting in extremely high precision requirements for the bracket. In addition, the bracket must meet the performance requirements of high temperature resistance, high voltage resistance, and passing the insulation withstand voltage test. At the same time, it must have good compatibility with the encapsulation material. For example, its thermal conductivity, electrical conductivity, and other parameters must be close to those of the encapsulation material; otherwise, delamination is very likely to occur.

[0027] Based on this, this application provides a semiconductor circuit, which includes a metal substrate 100, a metal connecting post 200, a glass fiber substrate 300, and pins 400. The metal connecting post 200 is vertically arranged on the metal substrate 100, which on the one hand supports the glass fiber substrate 300 to achieve fixation; on the other hand, it serves as a conductive medium to directly connect the circuit above the glass fiber substrate 300 with the circuit above the metal substrate 100.

[0028] A fiberglass substrate 300 is disposed on the upper end of the metal connecting post 200. The fiberglass substrate 300 is fixedly connected to the metal substrate 100 through the metal connecting post 200, and both ends of the metal connecting post 200 are electrically connected to the fiberglass substrate 300 and the metal substrate 100, respectively. Since the fiberglass board is an insulating material and isolates the heat dissipation of the high-voltage power device metal substrate 100, it can reduce heat radiation and improve product reliability. Furthermore, since the low-voltage drive control circuit uses fiberglass board wiring, the raw material cost is reduced.

[0029] Pins 400 are electrically connected to the metal substrate 100 and the fiberglass substrate 300 respectively. Pins 400 can be integrated into a double-layer lead frame structure, which not only fixes the relative position of the two substrates, but also serves as a metal interface for external circuit connection.

[0030] Specifically, the metal connecting post 200 is vertically fixed on the metal substrate 100, and the fiberglass substrate 300 is mounted on the top of the metal connecting post 200. The metal connecting post 200 is used to fix the metal substrate 100. The two ends of the metal connecting post 200 are electrically connected to the circuit wiring layers of the fiberglass substrate 300 and the metal substrate 100, respectively. The pins 400 are connected to the circuit wiring layers of the two substrates and extend outward as input and output interfaces.

[0031] Therefore, by optimizing the circuit layout of the circuit board, the circuit above the fiberglass board and the circuit above the metal substrate 100 are electrically connected through metal pillars. At the same time, the metal pillars support the fiberglass board. The double-layer lead frame structure fixes the upper and lower substrates, thus eliminating the need for brackets, reducing installation gaps, and avoiding the risk of glue overflow during assembly. It also eliminates the high-precision matching requirements between brackets and substrates, reducing production complexity and process costs.

[0032] In some embodiments, the metal substrate 100 includes a metal substrate 110, a first circuit wiring layer, and a plurality of first electronic components 150, wherein the first circuit wiring layer is disposed on the metal substrate 110, and the plurality of first electronic components 150 are disposed on the first circuit wiring layer.

[0033] The first circuit wiring layer is disposed on the surface of the metal substrate 110, and multiple first electronic components 150 are soldered on the wiring layer. The metal substrate 110 serves as the carrier of the high-voltage power device and utilizes its high thermal conductivity to quickly dissipate the operating heat of the device. The first circuit wiring layer forms conductive paths through copper foil etching to realize the circuit connection of the power device.

[0034] In some embodiments, the first electronic component includes a high-power component, which is provided with a heat sink 170. The heat sink 170 is mounted on the surface of the high-power component and fixed by mechanical pressing or thermally conductive adhesive, allowing the high-power component to expand its heat dissipation area through the heat sink 170, improving local heat dissipation capacity, thereby enhancing overall heat dissipation efficiency and ensuring stability under high-power conditions.

[0035] In some embodiments, the metal substrate 100 is further provided with an insulating layer 120 and a copper foil layer 130. The first circuit wiring layer is formed by etching the copper foil layer 130, and the insulating layer 120 is disposed between the first circuit wiring layer and the metal substrate 110. Specifically, the insulating layer 120 blocks the conductive path between the metal substrate 110 and the wiring layer, thereby preventing short circuits and leakage risks caused by energizing the circuit wiring layer and the metal substrate 110. The copper foil layer 130 is formed by etching the copper foil layer to create the required circuit, thus forming the circuit wiring layer and ensuring current transmission.

[0036] In some embodiments, the metal substrate 100 further includes a protective layer 140, which covers the surface of the circuit wiring layer. The protective layer 140, also known as an oil-resistant layer, can isolate air, dust, and solder, increase the withstand voltage between circuits, prevent short circuits caused by circuit oxidation or contamination, protect the circuits, and thus prevent circuit oxidation, contamination, or missoldering, extending their service life.

[0037] In some embodiments, a plurality of second electronic components 310 are disposed on the surface of the fiberglass substrate 300. The second electronic components 310 include surface mount capacitors, surface mount resistors and electronic component assemblies, which are disposed at intervals on the fiberglass substrate 300.

[0038] Specifically, surface mount components are small in size and high in precision, meeting the miniaturization requirements of low-voltage circuits; surface mount capacitors perform filtering, coupling, and bootstrapping functions in semiconductor circuits; components form the chips required for the internal functional circuits of semiconductor circuits; semi-finished components are made by mounting high-voltage power components with high heat dissipation requirements onto a small heat sink 170; the heat sink 170 uses a copper surface silver plating process to achieve better bonding between surface components and the heat sink 170, improving heat dissipation capacity; In some embodiments, a second circuit wiring layer is provided on the surface of the fiberglass substrate 300, and the chip capacitors, chip resistors, and electronic component assemblies are disposed on the second circuit wiring layer. Since the control circuit and power devices are relatively independent and not located on the same substrate, the anti-interference capability is improved. This allows the low-voltage control circuit to be fully integrated onto the fiberglass substrate, while the high-voltage power circuit is fully integrated onto the metal substrate, with the two connected and fixed via metal connecting posts and lead frames.

[0039] In some embodiments, the system further includes multiple bonding wires 320, through which the second circuit wiring layer and the multiple second electronic components 310 are connected. The bonding wires 320 connect the components to the wiring layer for signal transmission, thereby fulfilling wiring requirements. Optionally, the bonding wires 320 can be made of gold, aluminum, or copper; however, the material is not limited to these.

[0040] In some embodiments, the device further includes an encapsulation body 500, which covers the metal substrate 100, the metal connecting post 200, and the fiberglass substrate 300, with one end of the support extending outward from the encapsulation body 500. In some embodiments, the encapsulation body 500 is a hybrid resin. Optionally, the encapsulation body 500 is a hybrid resin. Specifically, it is a powdered molding compound made by mixing epoxy resin as the base resin, high-performance phenolic resin as the curing agent, adding silica powder and other fillers as fillers, and adding various additives. This compound is extruded into a mold cavity using a heat transfer molding method to embed the semiconductor chip within. It is then injected into a mold using a heat transfer molding method, covering the metal substrate 100, the metal connecting post 200, and the fiberglass substrate 300, exposing only the ends of the leads 400. After cross-linking and curing, it becomes a device with a specific external structure. Thus, the encapsulation body 500 achieves overall sealing, preventing internal components from being corroded by the environment, achieving high integration and miniaturization, and improving product reliability.

[0041] Therefore, by optimizing the circuit layout of the circuit board, the circuit above the fiberglass board and the circuit above the metal substrate 100 are electrically connected through metal pillars. At the same time, the metal pillars support the fiberglass board and fix the upper and lower substrates. This can solve the problems of high production difficulty, glue overflow in the installation gap, delamination and impact on electrical performance caused by the fixation of the double substrate bracket.

[0042] The semiconductor circuit fabrication process of this application has the following characteristics, including: Fiberglass board is used as part of the carrier; The process of arranging semiconductor circuits on a fiberglass board; A metal substrate serves as part of the carrier; The process of depositing a copper foil layer on the surface of a metal substrate; The process of forming a plating layer on the surface of a metal column of a specific shape to manufacture a metal connector; The process of forming a plating layer on the surface of a metal copper material of a specific shape to create a pin; The process of applying a fluid adhesive material to specific locations of the circuit wiring; The process of soldering chips onto the surface of a metal heat sink; The process of placing circuit components on the adhesive material; The process of curing the adhesive material; The flux and aluminum shavings remaining on the aluminum substrate are removed by cleaning methods such as spraying and ultrasonic cleaning. An electrical connection is formed between the circuit element and the circuit wiring by means of a bonding wire; The metal substrate, circuit board frame and pins are sealed and fixed by molding, so that the specific position of the circuit wiring at a specific potential is not filled by the resin. The process of testing necessary electrical and appearance parameters using testing equipment; After passing the test, the semiconductor circuit of this invention will be manufactured.

[0043] This application also provides a method for manufacturing a semiconductor circuit according to the above, specifically including the following steps: placing a metal substrate 100 and a fiberglass board into a special carrier, wherein the carrier can be a material that is resistant to high temperatures above 200°C, such as aluminum, synthetic stone, ceramic, or PPS; and mounting a semiconductor inverter circuit chip onto the component mounting positions reserved in the copper foil circuit layer of the metal substrate 100 and the fiberglass board by applying solder paste or applying silver paste, using an automatic die-attaching device such as a DA machine.

[0044] High-voltage power devices are mounted onto silver-plated copper heat sinks 170 using a solder die bonder to form semi-finished components.

[0045] Automated surface mount technology (SMT) equipment is used to mount resistors, capacitors, and other semi-finished components onto the component mounting positions. The lead frame and metal connecting post 200 are placed on the corresponding welding positions of the metal substrate 100 and the fiberglass board by a robotic arm or manually. The entire semi-finished product, including the carrier, is then passed through a reflow oven to weld all the components to the corresponding mounting positions. The welding quality of components is inspected using AOI (Automated Optical Inspection) equipment. Residual flux and aluminum shavings are removed from the circuit board through cleaning methods such as spraying and ultrasonic cleaning. Bonding wires are used to establish electrical connections between the circuit components and wiring. The circuit board is then encapsulated in a specific mold using packaging equipment. Laser marking is applied to the product, followed by post-curing stress relief in a high-temperature oven. Lead ribs and dummy leads are removed and shaped using a lead cutting and forming equipment. Finally, electrical parameter testing is performed to create a qualified product. This entire manufacturing process eliminates the need for brackets to fix the dual substrates, achieving one-time encapsulation. A multi-substrate stacking process is proposed to achieve high integration and miniaturization.

[0046] Furthermore, certain terms in this specification have been used to describe embodiments of this specification. For example, "an embodiment," "an embodiment," and / or "some embodiments" mean that a particular feature, structure, or characteristic described in connection with that embodiment may be included in at least one embodiment of this specification. Therefore, it is to be emphasized and understood that two or more references to "an embodiment" or "an embodiment" or "alternative embodiment" in various parts of this specification do not necessarily refer to the same embodiment. Moreover, specific features, structures, or characteristics may be suitably combined in one or more embodiments of this specification.

[0047] Finally, it should be understood that the embodiments disclosed herein are illustrative of the principles of the embodiments described in this specification. Other modified embodiments are also within the scope of this specification. Therefore, the embodiments disclosed in this specification are merely examples and not limitations. Those skilled in the art can implement the applications described in this specification using alternative configurations based on the embodiments in this specification. Therefore, the embodiments in this specification are not limited to the embodiments precisely described in the applications.

Claims

1. A semiconductor circuit, characterized in that: include: metal substrate(100); A metal connecting post (200) is vertically disposed on the metal substrate (100); A fiberglass substrate (300) is disposed on the upper end of the metal connecting post (200). The fiberglass substrate (300) is fixedly connected to the metal substrate (100) through the metal connecting post (200), and the two ends of the metal connecting post (200) are electrically connected to the fiberglass substrate (300) and the metal substrate (100) respectively. Pins (400) are electrically connected to the metal substrate (100) and the fiberglass substrate (300), respectively.

2. The semiconductor circuit according to claim 1, characterized in that: The metal substrate (100) includes a metal substrate (110), a first circuit wiring layer and a plurality of first electronic components (150), wherein the first circuit wiring layer is disposed on the metal substrate (110) and the plurality of first electronic components (150) are disposed on the first circuit wiring layer.

3. The semiconductor circuit according to claim 2, characterized in that: The first electronic component (150) includes a high-power component, and the high-power component is provided with a heat sink (170).

4. The semiconductor circuit according to claim 2, characterized in that: The metal substrate (100) is further provided with an insulating layer (120) and a copper foil layer (130). The first circuit wiring layer is formed by etching the copper foil layer (130). The insulating layer (120) is disposed between the first circuit wiring layer and the metal substrate (110).

5. The semiconductor circuit according to claim 4, characterized in that: The metal substrate (100) is further provided with a protective layer (140), which covers the surface of the first circuit wiring layer.

6. The semiconductor circuit according to claim 1, characterized in that: The surface of the fiberglass substrate (300) is provided with a second circuit wiring layer and a plurality of second electronic components (310), and the plurality of second electronic components (310) are disposed on the second circuit wiring layer.

7. The semiconductor circuit according to claim 6, characterized in that: It also includes multiple bonding wires (320) that connect the second circuit wiring layer and the multiple second electronic components (310) via the bonding wires (320).

8. The semiconductor circuit according to claim 7, characterized in that: The bonding wire is made of one of the following materials: gold, aluminum, or copper.

9. The semiconductor circuit according to claim 1, characterized in that: It also includes a package (500) that covers the metal substrate (100), the metal connecting post (200), and the fiberglass substrate (300), and one end of the pin extends outward from the package (500).

10. The semiconductor circuit according to claim 9, characterized in that: The encapsulation body (500) is a mixed resin.

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