Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: a processing container that accommodates a substrate and processes the substrate; a plasma generation unit that generates plasma in the processing container; a calculation unit that calculates a cumulative amount of power output by the plasma generation unit during processing of the substrate; a storage unit that stores, as a main accumulation amount, the accumulation amount at a processing end time point when a processing result of the substrate is normal; and a control unit that controls processing of the substrate on the basis of a process in which processing conditions including the processing time of the substrate are defined, and obtains a correction time with respect to the processing time on the basis of the difference between the calculated cumulant and the main cumulant.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] As one of the manufacturing processes of a semiconductor device, there is a case where a process of supplying plasma to a substrate (hereinafter also referred to as plasma processing) is performed (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: WO2019 / 082569 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique that enables the quality of plasma treatment performed on a substrate to be stable.

[0008] Methods for solving problems

[0009] According to one aspect of this disclosure, a technology having the following configuration can be provided:

[0010] A processing container that houses a substrate and processes the substrate;

[0011] A plasma generation unit that generates plasma within the processing container;

[0012] The computing unit calculates the cumulative amount of power output by the plasma generation unit during the processing of the substrate.

[0013] The storage unit stores the accumulated amount at the normal processing end time as the main accumulated amount, which is the processing result of the substrate; and

[0014] The control unit controls the processing of the substrate based on a process that defines processing conditions including the processing time of the substrate, and calculates a correction time relative to the processing time based on the difference between the calculated cumulative amount and the main cumulative amount.

[0015] Invention Effects

[0016] According to this disclosure, the quality of plasma treatment performed on the substrate can be stabilized. Attached Figure Description

[0017] Figure 1 This is a schematic configuration diagram of a substrate processing apparatus according to one aspect of the present disclosure.

[0018] Figure 2 This is a schematic diagram of the control unit of a substrate processing apparatus according to one aspect of the present disclosure.

[0019] Figure 3 This is a functional block diagram of a substrate processing apparatus for correcting the processing time timing according to one aspect of the present disclosure.

[0020] Figure 4 This is a flowchart illustrating a substrate processing timing sequence according to one aspect of the present disclosure.

[0021] Figure 5 This is a flowchart representing the timing correction of the processing time in one aspect of this disclosure.

[0022] Figure 6 (a) is a diagram illustrating an example of a control adjustment in one aspect of this disclosure that increases processing time. Figure 6 (b) is a diagram illustrating an example of a control adjustment in one aspect of this disclosure that aims to reduce processing time. Figure 6 (c) is a diagram illustrating an example of control over the adjustment of processing time not being implemented in one aspect of this disclosure.

[0023] Figure 7 This diagram illustrates an example of screen output from an input / output unit included in a substrate processing apparatus according to one aspect of this disclosure. Detailed Implementation

[0024] <One method of this disclosure>

[0025] The following description, with reference to the accompanying drawings, illustrates one aspect of this disclosure. The drawings used in this description are schematic, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of elements in multiple drawings may not necessarily be consistent with each other.

[0026] (1) Composition of substrate processing device

[0027] First, using Figures 1-3 , Figure 7 The configuration of the substrate processing apparatus (hereinafter also referred to as the processing apparatus) 100 will be described below.

[0028] (Processing Room)

[0029] like Figure 1As shown, the processing apparatus 100 includes a processing furnace 202 for processing a wafer 200, which serves as a substrate. The processing furnace 202 includes a processing container 203 for housing the wafer 200. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211. The upper container 210 is formed of a non-metallic material such as alumina (Al2O3) or quartz (SiO2), and the lower container 211 is formed of a metallic material such as aluminum (Al).

[0030] The processing chamber 201, constructed within the processing container 203, has a space for generating plasma (plasma generation space) and a space connected to the plasma generation space for processing the wafer 200 (substrate processing space). The plasma generation space refers to the space within the processing chamber 201 that is surrounded by the resonant coil 212, described later. The substrate processing space refers to the space within the processing chamber 201 that holds the wafer 200 to be processed, and is located below the plasma generation space.

[0031] An opening 245 and a gate valve 244 that hermetically seals the opening 245 are provided on the lower side wall of the lower container 211. By opening the gate valve 244, the inlet / outlet 245a is opened, and the wafer 200 can be moved (in and out) to and from the processing chamber 201.

[0032] (Base)

[0033] On the bottom side of the processing chamber 201, a base 217 is disposed as a substrate mounting part for mounting the wafer 200. The base 217 is formed of non-metallic materials such as aluminum nitride (AlN), ceramic, or quartz, and is electrically insulated from the lower container 211.

[0034] Inside the base 217, a heater 217b is provided as a heating mechanism. The heater 217b is connected to a heater power adjustment mechanism 276. The heater 217b heats the wafer 200 placed on the base 217 to a predetermined temperature.

[0035] An impedance adjustment electrode 217c is provided inside the base 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275. The impedance variable mechanism 275 includes a coil and a variable capacitor. By adjusting the value of at least one of the inductance, resistance, and capacitance of the coil, the impedance can be varied, for example, within the range of approximately 0 Ω to the parasitic impedance value of the processing chamber 201. Through these configurations, the density of the plasma generated above the wafer 200 is homogenized, and the potential (bias voltage) of the wafer 200 placed on the base 217 can be controlled.

[0036] A lifting mechanism 268 for raising and lowering the base 217 is provided at the bottom of the processing chamber 201. A through hole 217a is provided in the base 217. A pin 266 is provided on the bottom surface of the lower container 211. At least three through holes 217a and three pins 266 are provided in opposite positions. When the base 217 is lowered by the lifting mechanism 268, the upper end of the pin 266 passes through the through hole 217a, supporting the wafer 200 from below.

[0037] (Gas Supply Department)

[0038] A gas supply head 236 for supplying processing gas into the processing chamber 201 is provided on the upper part of the upper container 210. The gas supply head 236 includes a cover-shaped cover 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239. The buffer chamber 237 functions as a dispersion space to disperse the processing gas introduced into the processing chamber 201.

[0039] The gas inlet 234 is connected by a gas supply pipe 232a for supplying the first processed gas, a gas supply pipe 232b for supplying the second processed gas, and a gas supply pipe 232c for supplying the inert gas. Gas supply sources 250a-250c, mass flow controllers (MFC) 252a-252c (serving as flow control devices), and valves 253a-253c (serving as on / off valves) are respectively installed in gas supply pipes 232a-232c. Valve 243a is installed in the gas supply pipe 232, which is formed by the confluence of gas supply pipes 232a-232c.

[0040] The first processing gas supply system is mainly composed of gas supply pipe 232a, MFC 252a, and valve 253a. Alternatively, the first processing gas supply source 250a can also be included in the first processing gas supply system. The second processing gas supply system is mainly composed of gas supply pipe 232b, MFC 252b, and valve 253b. Alternatively, the second processing gas supply source 250b can also be included in the second processing gas supply system. The inert gas supply system is mainly composed of gas supply pipe 232c, MFC 252c, and valve 253c. Alternatively, the inert gas supply source 250c can also be included in the inert gas supply system.

[0041] (Exhaust section)

[0042] An exhaust port 235 is provided on the side wall of the lower container 211. The exhaust port 235 is connected to the exhaust pipe 231. The exhaust pipe 231 is equipped with an APC valve 242 as a pressure regulating unit, a valve 243b as an on / off valve, and a vacuum pump 246 as an exhaust device. The exhaust section is mainly composed of the exhaust port 235, the exhaust pipe 231, the APC valve 242, and the valve 243b. The vacuum pump 246 may also be included in the exhaust section.

[0043] (Plasma generation unit)

[0044] A resonant coil 212, wound in a spiral shape, is provided on the side of the upper container 210, surrounding the processing chamber 201. The resonant coil 212 is connected to the RF sensor 272, the high-frequency power supply 273, and the matching unit 274.

[0045] A high-frequency power supply 273 supplies high-frequency power to the resonant coil 212 via an RF sensor 272. The RF sensor 272 monitors the traveling or reflected waves of the high-frequency power supplied from the high-frequency power supply 273 to the resonant coil 212. A matching converter 274 controls the power output of the high-frequency power supply 273 to the resonant coil 212. For example, based on information about the reflected waves monitored by the RF sensor 272, the matching converter 274 controls the impedance or output frequency of the high-frequency power supply 273 to minimize the magnitude of the reflected waves.

[0046] The resonant coil 212 functions as a plasma generation unit. It receives power from the high-frequency power supply 273 to generate standing waves, creating a predetermined magnetic field in the plasma generation space to generate plasma. The resonant coil 212 is configured to resonate by receiving power at a predetermined frequency, and its winding diameter, winding spacing, and number of windings are set accordingly. For example, when supplied with high-frequency power of 800 kHz to 50 MHz and 0.1 to 5 kW, the resonant coil 212 can generate a magnetic field of 0.01 to 10 Gauss in the plasma generation space. The resonant coil 212 is fixed to the base plate 248 using insulating components.

[0047] One end of the resonant coil 212 is grounded via a movable tap 213, and the other end is grounded via a fixed tap 214. A movable tap 215 is provided between the grounded ends of the resonant coil 212. The movable tap 215 functions as a power supply section that receives power from the high-frequency power supply 273. By adjusting the connection positions of the movable taps 213 and 215 with respect to the resonant coil 212, the resonant characteristics of the resonant coil 212 can be made suitable for the output conditions of the high-frequency power supply 273.

[0048] A cylindrical shielding plate 223 is disposed around the outer periphery of the resonant coil 212. The shielding plate 223 shields the electric field radiating outward from the resonant coil 212 while forming a capacitive component (C component) between itself and the resonant coil 212, which is one of the components of a resonant circuit. The shielding plate 223 is made of a conductive material such as an Al alloy.

[0049] The plasma generation unit (plasma generation section) is mainly constructed through the resonant coil 212. The high-frequency power supply 273, RF sensor 272, matching device 274, movable taps 213 and 215, and shielding plate 223 can also be included in the plasma generation unit.

[0050] (Control Department)

[0051] The control unit (control unit) 221 is configured to control APC valve 242, valve 243b, and vacuum pump 246 via signal line A; control lifting mechanism 268 via signal line B; control heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C; control gate valve 244 via signal line D; control RF sensor 272, high-frequency power supply 273, and matching unit 274 via signal line E; and control MFC 252a-252c, valves 253a-253c, and 243a via signal line F.

[0052] like Figure 2 As shown, the control unit 221 is configured as a computer including a CPU 221a, RAM 221b, storage unit 221c, and I / O port 221d. The RAM 221b, storage unit 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. The control unit 221 is connected, for example, to an input / output unit 222 configured as a touch panel. The control unit 221 can be connected to an external storage device 221t. The processing device 100 may also be configured to include one or more control units. That is, one or more control units can be used to control the execution of the processing sequence described later. Multiple control units may also be configured as a control system interconnected via a wired or wireless communication network, or the entire control system may be used to control the execution of the processing sequence described later. When the term "control unit" is used in this specification, it includes not only the case of one control unit, but also the case of multiple control units, or the case of a control system composed of multiple control units.

[0053] The storage unit 221c is composed of flash memory, HDD, SSD, etc. Within the storage unit 221c, control programs that control the operation of the processing device and process procedures that describe the sequence or conditions of the substrate processing (described later) are readablely stored. The process procedures are combined to enable the processing device 100 to execute each sequence of the substrate processing (described later) via the control unit 221 to achieve a predetermined result, thus functioning as a program. Hereinafter, process procedures and control programs may be collectively referred to as programs. Furthermore, process procedures are referred to as processes. Additionally, when using the term "program" in this specification, there may be cases where only processes are included, cases where only control programs are included, or cases where both are included. RAM 221b is configured as a storage area (working area) that temporarily holds programs or data read by the CPU 221a.

[0054] I / O port 221d is connected to the aforementioned MFC252a~252c, valves 253a~253c, 243a, 243b, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching device 274, impedance variable mechanism 275, heater power adjustment mechanism 276, gate valve 244, lifting mechanism 268, etc.

[0055] CPU 221a is configured to read and execute control programs from storage unit 221c, and can also read processes from storage unit 221c according to input operation instructions from input / output unit 222. CPU 221a is configured to control, according to the read process content, the flow rate adjustment of various gases based on MFCs 252a-252c, the opening and closing of valves 253a-253c, 243a, and 243b, the opening adjustment of APC valve 242, the start and stop of vacuum pump 246, the power supply to resonant coil 212 based on RF sensor 272, high-frequency power supply 273, and matching unit 274, the impedance adjustment based on impedance variable mechanism 275, the temperature adjustment of heater 217b based on heater power adjustment mechanism 276, the opening and closing of gate valve 244, and the lifting and lowering of base 217 based on lifting mechanism 268, etc.

[0056] The control unit 221 can be configured by installing the aforementioned program, recorded and stored in the external storage device 221t, into a computer. The external storage device 221t includes, for example, a hard disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a USB memory, or a semiconductor memory such as an SSD. The storage unit 221c or the external storage device 221t constitutes a computer-readable recording medium. Hereinafter, these may be collectively referred to as recording media. When using the term "recording medium" in this specification, there may be cases where only the storage unit 221c is included, cases where only the external storage device 221t is included, or cases where both are included. Furthermore, the provision of the program to the computer may also be performed without using the external storage device 221t, but using a communication unit such as the Internet or a dedicated line.

[0057] In addition, the control unit 221 of this embodiment also includes a computing unit 221f. The computing unit 221f is configured to exchange data with the CPU 221a, RAM 221b, storage unit 221c, I / O port 221d, etc., via the internal bus 221e of the control unit 221. The computing unit 221f can also be a function implemented by predetermined hardware, or it can be a function implemented by the CPU 221a reading the control program from the storage unit 221c, thus being implemented by software. The computing unit 221f, as... Figure 2 The shown can also be configured as one of the constituent elements of the control unit 221, or it can be configured separately from the control unit 221.

[0058] like Figure 3 As shown, the calculation unit 221f is configured such that, in the implementation of the substrate processing S230 described later, the control unit 221 calculates the cumulative amount P of the power output by the plasma generation unit based on information obtained via the RF sensor 272. The cumulative amount P calculated by the calculation unit 221f includes, in the case of the cumulative amount Pt of the power of the traveling wave output by the plasma generation unit, and in the case of the cumulative amount Pr of the power of the reflected wave output by the plasma generation unit. Furthermore, the calculation unit 221f is configured to repeatedly calculate the cumulative amount P in real time or at a predetermined period during the implementation of the substrate processing S230. Additionally, the calculation unit 221f is configured to not perform the calculation of the cumulative amount P in the discharge preparation S210 and discharge ignition S220 described later, but to perform the calculation of the cumulative amount P during the implementation of the substrate processing S230.

[0059] In addition, such as Figure 3 As shown, the storage unit 221c is configured such that when the substrate processing S230 described later is performed, the cumulative amount P calculated by the calculation unit 221f when the processing result of the storage substrate is normal is read as the main cumulative amount Pm.

[0060] In addition, such as Figure 3 As shown, when the control unit 221 controls the progress of the substrate processing S230 (described later) according to a process that defines processing conditions including processing time T, it calculates the difference ΔP between the accumulated amount P calculated by the calculation unit 221f in the substrate processing S230 and the main accumulated amount Pm stored in the storage unit 221c. Furthermore, the control unit 221 is configured to calculate a correction time ΔT relative to the processing time T based on the obtained difference ΔP, and adjust the end timing of the substrate processing S230 based on the correction time ΔT. Additionally, the processing time in this specification refers to the time during which the processing continues. This also applies to the following description.

[0061] Specifically, the control unit 221 is configured to adjust the processing time T by increasing the processing time T based on a correction time ΔT when the accumulated amount P after the expected processing time T has elapsed is less than the main accumulated amount Pm. Conversely, the control unit 221 is configured to adjust the processing time T by decreasing the processing time T based on a correction time ΔT when the accumulated amount P after the expected processing time T has elapsed is greater than the main accumulated amount Pm. Furthermore, the control unit 221 is configured not to perform any adjustment to the processing time T based on the correction time ΔT when there is no difference between the accumulated amount P after the processing time T has elapsed and the main accumulated amount Pm. Moreover, the control unit 221 is configured to continue or stop the substrate processing S230 corresponding to the corrected processing time T.

[0062] In addition, such as Figure 7As shown, the input / output unit 222 is configured to display the waveform Wt of the traveling wave power output by the plasma generation unit and the waveform Wr of the reflected wave power output by the control unit 221 via the RF sensor 272, etc. Specifically, the input / output unit 222 is configured to display the waveform Wt of the traveling wave power output by at least one of the resonant coil 212, the high-frequency power supply 224, and the matching unit 274, and the waveform Wr of the reflected wave power output by these machines. Furthermore, the input / output unit 222 is also configured to display the traveling wave power value Mt and the reflected wave power value Mr monitored by the RF sensor 272.

[0063] Furthermore, the input / output unit 222 is configured to display the accumulated amount Pt of the traveling wave power and the accumulated amount Pr of the reflected wave power calculated by the calculation unit 221f during the implementation of the substrate processing S230 described later. Alternatively, the input / output unit 222 may also display the accumulated amount P obtained by combining the accumulated amount Pt of the traveling wave power and the accumulated amount Pr of the reflected wave power.

[0064] Furthermore, the input / output unit 222 is also configured to display the progress status (process step information) S of the substrate processing S230 described later, the cumulative amount P calculated by the calculation unit 221f during the implementation of the substrate processing S230, and the main cumulative amount Pm read from the storage unit 221c. Additionally, the cumulative amount P is obtained as described above by combining the cumulative amounts Pt and Pr. Figure 7 This is an example of how the cumulative quantity P is actually displayed by showing the cumulative quantities Pt and Pr.

[0065] Details regarding these aspects will be explained in the following substrate processing steps.

[0066] (2) Substrate processing process

[0067] Reference Figure 4 , Figure 5 , Figure 6 (a)~ Figure 6 (c) describes a method for processing a substrate using the processing apparatus 100 described above, namely, an example of processing a sequence of wafers 200, which serve as substrates, using plasma, as a step in a semiconductor device manufacturing process (manufacturing method). In the following description, the operation of each part constituting the processing apparatus 100 is controlled by the control unit 221.

[0068] (Substrate loading S110)

[0069] First, the base 217 is lowered by the lifting mechanism 268, causing the upper end of the pin 266 to protrude from the upper surface of the base 217. Then, the gate valve 244 is opened, and the wafer 200 is moved into the processing chamber 201. After the wafer 200 is moved in, the gate valve 244 is closed, sealing the processing chamber 201. Then, the base 217 is raised by the lifting mechanism 268, transferring the wafer 200 onto the base 217.

[0070] (Temperature / Pressure Adjustment S120)

[0071] The temperature of heater 217b is adjusted using heater power adjustment mechanism 276 to set the temperature of wafer 200 on substrate 217 to a predetermined processing temperature (temperature adjustment). Simultaneously, while adjusting the opening of APC valve 242, vacuum pump 246 vents the vacuum from processing chamber 201, setting the pressure within processing chamber 201 to a predetermined processing pressure (pressure adjustment). These controls continue at least until the plasma processing S140, described later, is completed.

[0072] (Processing gas supply S130)

[0073] Valves 253a and 253b are opened, allowing the processing gases (first processing gas and second processing gas) to flow into gas supply pipes 232a and 232b. The flow rate of the processing gases is adjusted via MFCs 252a and 252b, and they are supplied to the processing chamber 201 through gas supply pipe 232 and gas supply head 236. At this time, valve 243c can also be opened to supply inert gas into the processing chamber 201 through gas supply pipe 232 and gas supply head 236. The supply of processing gases continues until the plasma processing S140, described later, ends.

[0074] (Plasma processing S140)

[0075] Next, plasma treatment S140 is performed. This treatment is controlled according to a process that includes: a preparation process, which defines preparation processes including plasma discharge and ignition; a main process, which defines the treatment performed on the substrate; and a secondary process, which defines additional treatments performed on the substrate.

[0076] First, according to the preparation process, plasma ignition preparation (discharge preparation S210) based on the plasma generation unit is performed. For example, standby is performed until the pressure in the processing chamber 201 reaches a predetermined pressure and stabilizes. In addition, preparation for plasma ignition operation based on RF sensor 272, high-frequency power supply 273, and matching device 274 is performed. In addition, for example, the initial value of impedance based on impedance variable mechanism 275 is set.

[0077] Then, according to the preparation process, high-frequency power is supplied from the high-frequency power supply 273 to the resonant coil 212, initiating plasma generation based on the plasma generation unit (discharge ignition S220). This excites the plasma of the processing gas (induced plasma) in the plasma generation space within the processing chamber 201, causing the molecules of the plasma-like processing gas to dissociate and generate various free radicals, ions, and other reaction species. A predetermined time is required for the plasma generated in the plasma generation space to stabilize. During this period, impedance adjustments based on the impedance variable mechanism 275 are performed, and sometimes the power output from the plasma generation unit becomes unstable.

[0078] If the plasma generation in the plasma generation space is stable, the processing of wafer 200 (substrate processing S230) begins according to the main process. In this processing, the reactants contained in the plasma are uniformly and continuously supplied to the surface of wafer 200 and react with the surface of wafer 200, thereby processing the surface of wafer 200. By performing this processing, for example, a surface-modified film is formed on the surface of wafer 200. When the surface of the wafer 200 to be processed contains, for example, silicon (Si), a nitrogen-containing gas such as nitrogen (N2) is used as the first processing gas, and a hydrogen-containing gas such as hydrogen (H2) is used as the second processing gas, a silicon nitride film (SiN film) of a predetermined thickness is formed on the surface of wafer 200.

[0079] The following are examples of the processing conditions for substrate processing S230. This information is defined in the main process described above.

[0080] Processing temperature: 150~750℃

[0081] Processing pressure: 1–250 Pa, preferably 1–5 Pa

[0082] Processing time: 1–600 seconds, preferably 120–300 seconds

[0083] The first processing gas supply flow rate is 0.02–5 slm, preferably 0.1–1 slm.

[0084] The second processing gas supply flow rate is 0.02–5 slm, preferably 0.1–1 slm.

[0085] Supply flow rate of the first processing gas / Supply flow rate of the second processing gas: 1 / 10 to 10 / 1

[0086] Inert gas supply flow rate: 0~10slm

[0087] RF power: 1-5000W, preferably 100-3500W

[0088] RF frequency: 13.5MHz or 27MHz

[0089] In this specification, the expression of a numerical range such as "150~750℃" means that the lower and upper limits are included within the range. Therefore, for example, "150~750℃" means "above 150℃ and below 750℃". The same applies to other numerical ranges. Furthermore, processing temperature means the temperature of wafer 200 or the temperature inside processing chamber 201, and processing pressure means the pressure inside processing chamber 201. Additionally, a supply flow rate of 0 slm means that the gas is not supplied. Furthermore, RF power is the high-frequency power output by the plasma generation unit, and RF frequency is the frequency of the high-frequency power output by the plasma generation unit.

[0090] As the first processing gas, nitrogen-containing gases such as nitrogen (N2), ammonia (NH3), and hydrazine (H2N4) can be used. One or more of these can be used as the first processing gas.

[0091] Alternatively, hydrogen (H2) gas, deuterium (D2) gas, or other hydrogen-containing gases can be used as the second processing gas. One or more of these can be used as the second processing gas.

[0092] Furthermore, as at least one of the first and second processing gases, oxygen-containing gases such as oxygen (O2), ozone (O3), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), carbon dioxide (CO2), and carbon monoxide (CO) may be used. More than one of these may be used as the processing gas.

[0093] As inert gases, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. More than one of these can be used as an inert gas.

[0094] Although the substrate processing S230 is performed in this manner, there are issues regarding its stability as described below.

[0095] As described above, the substrate processing S230 begins after the plasma generation in the plasma generation space has stabilized. However, even after the substrate processing S230 begins, there may be temporary fluctuations in the power output of the plasma generation unit due to various reasons. Figure 7 Examples of the waveforms Wt of the traveling wave and Wr of the reflected wave output by the plasma generation unit are provided (solid line: traveling wave, dashed line: reflected wave).

[0096] like Figure 7As shown in the waveform, the power of the traveling wave output by the plasma generation unit may temporarily decrease or temporarily increase. Additionally, the power of the reflected wave output by the plasma generation unit is controlled to a minimum by the matching unit 274, but it may temporarily increase. These temporary fluctuations in the power output by the plasma generation unit can lead to an increase or decrease in the cumulative amount of power output by the plasma generation unit during each substrate processing S230, i.e., an excess or deficiency in the total amount of reactants supplied to the wafer 200 during each substrate processing S230 (an excess or deficiency in the degree of plasma processing). In this case, the degree of plasma processing on the wafer 200 may deviate from the target degree. As a result, the thickness or quality of the film formed on the surface of the wafer 200 may deviate from the target value.

[0097] However, when the expected cumulative power output from the plasma generation unit decreases (insufficient power supply for processing), the deficiency in plasma processing can be compensated by adjusting the processing time T of the substrate processing S230. Conversely, when the expected cumulative power output from the plasma generation unit increases (exceeding the power supply for processing), the excess in plasma processing can be eliminated by adjusting the processing time T of the substrate processing S230. Therefore, in this method, during the implementation of the substrate processing S230, the cumulative power output P from the plasma generation unit is accumulated, and based on this result, the processing time T of the substrate processing S230 is corrected, adjusting the end timing of the substrate processing S230.

[0098] (Correction processing for processing time T)

[0099] The following is for reference Figure 5 The specific explanation covers the correction process for the processing time T in substrate processing S230.

[0100] After the plasma generation in the plasma generation space is stable and the substrate processing begins (S230), the computing unit 221f acquires information about the power of the traveling wave and the power of the reflected wave output by the plasma generation unit via the RF sensor 272 (S310). This power information is acquired from at least one of the high-frequency power supply 273, the matching unit 274, and the resonant coil 212 via the RF sensor 272, etc.

[0101] The calculation unit 221f calculates the cumulative amount of power Pt of the traveling wave output by the plasma generation unit based on the acquired power information, and also calculates the cumulative amount of power Pr of the reflected wave output by the plasma generation unit (S320). The acquisition (S310) and accumulation (S320) of the power information based on the calculation unit 221f can be performed in real time after the start of the substrate processing S230, or it can be repeated at a predetermined period (e.g., an interval of 50 to 200 ms).

[0102] Then, the calculation unit 221f combines the obtained cumulative amounts Pt and Pr, and uses this combined value as the cumulative amount P of the power output by the plasma generation unit. The calculation unit 221f then sends the cumulative amount P obtained through the combination to the control unit 221. Furthermore, when the influence of the reflected wave's power variation on the substrate processing S230 is negligible, the cumulative amount Pr of the reflected wave's power may not be used as the calculation object, but instead the cumulative amount Pt of the traveling wave's power may be used as the cumulative amount P and sent to the control unit 221. Similarly, when the influence of the traveling wave's power variation on the substrate processing S230 is negligible, the cumulative amount Pt of the traveling wave's power may not be used as the calculation object, but instead the cumulative amount Pr of the reflected wave's power may be used as the cumulative amount P and sent to the control unit 221.

[0103] The control unit 221, which receives the accumulated amount P from the calculation unit 221f, reads the main accumulated amount Pm from the storage unit 221c (S330). The main accumulated amount Pm refers to the accumulated amount P accumulated by the calculation unit 221f at the end time of the process when the result of the substrate processing S230 is normal. That is, the main accumulated amount Pm refers to the accumulated amount of power that the plasma generation unit should output when the substrate processing S230 is performed normally, without over- or under-processing. The main accumulated amount Pm refers to the amount that is pre-stored in the storage unit 221c before the start of the substrate processing S230. When the substrate processing S230 is repeated, if the result of the previous substrate processing S230 is normal, the accumulated amount P accumulated by the calculation unit 221f at the end time of that process can be used as the main accumulated amount Pm.

[0104] Next, the control unit 221 compares the accumulated amount P calculated by the calculation unit 221f during the implementation of the substrate processing S230 with the main accumulated amount Pm read from the storage unit 221c, and calculates their difference ΔP. Then, based on this difference ΔP, a correction time ΔT for correcting the processing time T of the substrate processing S230 is calculated (S340). When the accumulated amount P is less than the main accumulated amount Pm when the expected processing time T has elapsed, the correction time ΔT is set to increase the processing time T. Conversely, when the accumulated amount P is greater than the main accumulated amount Pm when the expected processing time T has elapsed, the correction time ΔT is set to decrease the processing time T. Finally, when there is no difference between the accumulated amount P and the main accumulated amount Pm when the expected processing time T has elapsed, the correction time ΔT is set to not adjust the processing time T.

[0105] Then, the control unit 221 determines whether the processing time T needs to be corrected based on the obtained correction time ΔT (S350).

[0106] If the correction is required in the correction determination S350, and the correction processing time T is determined to be correct (yes), the control unit 221 performs the correction of the processing time T as follows (S360).

[0107] For example, if the accumulated amount P after the expected processing time T has elapsed is smaller than the main accumulated amount Pm, the control unit 221 adjusts the control in the direction of increasing the processing time T based on the correction time ΔT. Various control methods can be considered for this situation; in this example, such as... Figure 6 As shown in (a), the main process is completed according to the definition (i.e., maintaining the processing time T). After that, the subprocess, whose processing conditions other than the processing time are defined in the same way as those defined in the main process, continues for only a time equivalent to the correction time ΔT. Thus, the processing time T is substantially increased (corrected processing time T = processing time T defined in the process + correction time ΔT).

[0108] Additionally, for example, when the accumulated amount P after the expected processing time T has elapsed is greater than the main accumulated amount Pm, the control unit 221 adjusts the control in the direction of reducing the processing time T based on the correction time ΔT. Various control methods can be considered in this case; in this embodiment, such as... Figure 6 As shown in (b), the main process is terminated early when the remaining processing time of the main process equals the correction time ΔT, and no sub-process is performed thereafter. Thus, the processing time T is substantially reduced (corrected processing time T = processing time T defined in the process - correction time ΔT). Furthermore, not performing the sub-process means including setting the sub-process processing time to 0, formally performing the sub-process, i.e., substantially skipping the sub-process.

[0109] When the correction requirement determination S350 indicates no correction is needed (No), that is, when there is no difference between the accumulated amount P and the main accumulated amount Pm when the expected processing time T has elapsed, the control unit 221 does not perform an adjustment to the processing time T based on the correction time ΔT. Various control methods can be considered for this situation; in this approach, such as... Figure 6 As shown in (c), the remaining processing time of the main process is completed according to the definition (i.e., the maintenance processing time T), after which no sub-process is performed. Therefore, no adjustment is made to the processing time T (the corrected processing time T = the processing time T defined in the process).

[0110] In addition, if it is determined in S350 that no correction is needed (No), the adjustment of the processing time T is set to not be implemented, and then the above-mentioned series of correction processes (S310 to S350) are implemented again.

[0111] By performing the aforementioned correction process, the control unit 221 appropriately continues or stops the substrate processing S230 in accordance with the corrected processing time T, and appropriately adjusts the end timing of the substrate processing S230. Furthermore, when stopping the substrate processing S230, the supply of high-frequency power from the high-frequency power supply 273 to the resonant coil 212 is stopped, and the generation of plasma in the plasma generation space is stopped. Also, valves 253a and 253b are closed, stopping the supply of processing gas to the processing chamber 201.

[0112] It is desirable to perform the above-described correction process a predetermined number of times (more than once, preferably multiple times) during the implementation of substrate processing S230. The correction process may also be repeated at a certain cycle during the implementation of substrate processing S230, or it may be performed multiple times at a short cycle only during the period when substrate processing S230 is about to end.

[0113] Furthermore, as described above, it is preferable that the calculation unit 221f does not perform the calculation of the accumulated amount P during the discharge preparation S210 or discharge ignition S220 implementation, but performs the calculation of the accumulated amount P during the substrate processing S230 implementation. That is, it is preferable that the calculation unit 221f does not perform the calculation of the accumulated amount P during the preparation process implementation, but performs the calculation of the accumulated amount P during the main process implementation. In the discharge ignition S220, since the power output from the plasma generation unit becomes unstable, the processing time T can be more accurately corrected by excluding the discharge preparation S210 or discharge ignition S220 from the period when power accumulation processing is expected.

[0114] (Post-purge / atmospheric pressure recovery S150)

[0115] If substrate processing S230 ends, then as follows Figure 4As shown, plasma treatment S140 ends, valve 243c is opened, and inert gas is supplied to the treatment chamber 201 via gas supply pipe 232 and gas supply head 236. This purges the treatment chamber 201, removing any residual gas or reaction byproducts (post-purge). Afterwards, the atmosphere in the treatment chamber 201 is replaced with inert gas, and the pressure inside the treatment chamber 201 returns to normal atmospheric pressure (atmospheric pressure restoration).

[0116] (Substrate removal S160)

[0117] The base 217 is lowered by the lifting mechanism 268, causing the upper end of the pin 266 to protrude from the upper surface of the base 217, thus transferring the wafer 200 onto the pin 266. Then, the gate valve 244 is opened, and the wafer 200 is moved out of the processing chamber 201. Through the above, the substrate processing step of this method is completed.

[0118] (3) The effect of this method

[0119] According to this method, one or more of the effects shown below can be achieved.

[0120] (a) In the implementation of substrate processing S230, the difference ΔP between the accumulated amount P calculated by the calculation unit 221f and the main accumulated amount Pm read from the storage unit 221c is obtained. A correction time ΔT relative to the processing time T is calculated based on the difference ΔP. The end timing of substrate processing is adjusted based on the correction time ΔT. Therefore, even if the accumulated amount of power output by the plasma generation unit increases or decreases each time substrate processing S230 is performed, the degree (processing quantity) of substrate processing using plasma can be made consistent with the target degree (processing quantity). As a result, the quality of plasma processing can be stabilized, resulting in a better yield.

[0121] (b) The cumulative amount P includes the cumulative amount Pt of the traveling wave power output by the plasma generation unit and the cumulative amount Pr of the reflected wave power, thereby enabling accurate control as described above, stabilizing the quality of plasma processing, and improving the yield.

[0122] (c) The calculation unit 221f performs the calculation of the cumulative amount P in real time or at a predetermined cycle (e.g., 50 to 200 msec) during the implementation of the substrate processing S230, thereby accurately performing the above-mentioned control, stabilizing the quality of plasma processing, and improving the yield.

[0123] (d) If the cumulative amount P during the expected processing time T is less than the main cumulative amount Pm, adjustments are made in the direction of increasing the processing time T based on the correction time ΔT, thereby accurately performing the above-mentioned control. For example, as shown in this method, if the cumulative amount P during the main process is expected to be less than the main cumulative amount Pm, the main process is completed according to the definition, and then the sub-process continues, thereby substantially increasing the processing time T and accurately performing the above-mentioned control.

[0124] (e) When the accumulated amount P during the expected processing time T is greater than the main accumulated amount Pm, adjustments are made in the direction of reducing the processing time T based on the correction time ΔT, thereby enabling accurate control as described above. For example, as shown in this method, when the accumulated amount P during the main process is expected to be greater than the main accumulated amount Pm, the main process is terminated when the remaining processing time of the main process equals the correction time ΔT, and no sub-process is performed thereafter. This substantially reduces the processing time T, enabling accurate control as described above.

[0125] (f) When there is no difference between the accumulated amount P and the main accumulated amount Pm when the expected processing time T has elapsed, no adjustment to the processing time T based on the correction time ΔT is performed, thereby enabling accurate control as described above. For example, as shown in this method, when there is no difference between the accumulated amount P and the main accumulated amount Pm when the main process is performed according to the definition, the main process is completed according to the definition, and no sub-process is performed thereafter. Therefore, no adjustment to the processing time T is required, and accurate control as described above is performed.

[0126] (g) As shown above, the substrate processing S230 is continued or stopped in accordance with the corrected processing time T, thereby enabling accurate control as described above, stabilizing the quality of plasma processing, and improving the yield.

[0127] (h) The input / output unit 222 displays the waveform Wt of the traveling wave power output by the plasma generation unit and the waveform Wr of the reflected wave power output by the plasma generation unit, thus allowing the operator to easily confirm the normal operation of the substrate processing S230. That is, since the input / output unit 222 displays the waveform of the traveling wave power output by at least one of the resonant coil 212, the high-frequency power supply 273, and the matching unit 274, and the waveform of the reflected wave power output by that machine, the operator can easily confirm the normal operation of the substrate processing S230.

[0128] (i) The input / output unit 222 displays the accumulated amount Pt of the traveling wave output by the plasma generation unit and the accumulated amount Pr of the reflected wave output by the plasma generation unit, so that the operator can easily confirm the normal operation status of the substrate processing S230.

[0129] (j) The input / output unit 222 displays the progress status S of the substrate processing S230, the cumulative amount P calculated during the implementation of the substrate processing S230, and the main cumulative amount Pm read from the storage unit 221c, so that the operator can easily confirm the normal progress status of the substrate processing S230.

[0130] (k) The cumulative amount P is not calculated during the preparation process, but is calculated during the main process. This allows for accurate correction of the processing time T, which in turn stabilizes the quality of plasma processing and improves the yield.

[0131] <Other methods of this disclosure>

[0132] The foregoing has specifically described the methods of this disclosure. However, this disclosure is not limited to the methods described above, and various modifications may be made without departing from its essence. Examples of other methods of this disclosure are described below. Furthermore, unless otherwise stated, the processing order and processing conditions of the steps in the following other methods may be set to be the same as the processing order and processing conditions of the steps in the above processing sequence.

[0133] In the above-described method, as an example of substrate processing S230, a case was described where a nitrogen-containing gas or a hydrogen-containing gas was used as the processing gas to form a SiN film on a substrate containing Si on its surface. However, this method is not limited to this correspondence. This disclosure can also be applied to cases where oxygen-containing gas, carbon-containing gas, silicon-containing gas, or metal-containing gas is used as the processing gas to form films other than SiN films on the substrate. In such cases, the same effect as the method described above can be obtained.

[0134] The above method describes the case where plasma is used in substrate processing S230 to modify the surface of the substrate and form a film, but this method is not limited to this correspondence. For example, plasma can also be used in substrate processing S230 to deposit a film on the surface of the substrate. Alternatively, plasma can be used in substrate processing S230 to etch the surface of the substrate. In these cases, the same effect as described above can be achieved.

[0135] Preferably, the processes for each treatment are prepared individually according to the treatment content, and recorded and stored in the storage unit 221c via a telecommunication line or external storage device 123. Furthermore, when each treatment begins, the CPU 221a preferably selects an appropriate process from the multiple processes recorded and stored in the storage unit 221c, based on the treatment content. This allows for the formation of membranes of various types, compositions, qualities, and thicknesses with better reproducibility in the processing apparatus. Moreover, it reduces the operator's workload, avoids operational errors, and allows for the rapid initiation of each treatment.

[0136] The aforementioned process is not limited to the case of new manufacturing; for example, it can also be prepared by modifying an existing process already installed in the processing device. When modifying the process, the modified process can also be installed in the processing device via a telecommunication line or a recording medium that records the process. Alternatively, an existing process already installed in the processing device can be directly modified by operating the input / output unit 122 of the existing processing device.

[0137] The above-described method describes a single-wafer processing apparatus that processes one substrate at a time. However, this disclosure is not limited to the above-described method; for example, a batch processing apparatus that processes multiple substrates at a time may also be applicable. Furthermore, the above-described method describes a processing apparatus using a processing furnace with a cold wall type. However, this disclosure is not limited to the above-described method; a processing apparatus using a processing furnace with a hot wall type may also be applicable.

[0138] When using these processing devices, each process can be performed using the same processing sequence and processing conditions as described above or in the modified examples, and the same effect as described above or in the modified examples can be achieved.

[0139] The above methods or variations can be used in appropriate combinations. In this case, the processing order and processing conditions can be set to be the same as those in the above methods or variations.

[0140] Symbol Explanation

[0141] 100 substrate processing apparatus

[0142] 200 wafers (substrate)

[0143] 203 processing container

[0144] 221 Control Department

[0145] 221f Computing Department

[0146] 221c Storage Unit.

Claims

1. A substrate processing apparatus, characterized in that, have: A processing container that houses a substrate and processes the substrate; A plasma generation unit that generates plasma within the processing container; The computing unit calculates the cumulative amount of power output by the plasma generation unit during the processing of the substrate. The storage unit stores the accumulated amount at the processing end time point under normal conditions as the main accumulated amount, which is the processing result of the substrate. as well as The control unit controls the processing of the substrate based on a process that defines processing conditions including the processing time of the substrate, and calculates a correction time relative to the processing time based on the difference between the calculated cumulative amount and the main cumulative amount.

2. The substrate processing apparatus according to claim 1, characterized in that, The control unit is capable of adjusting the end timing of the substrate processing based on the calibration time.

3. The substrate processing apparatus according to claim 1, characterized in that, The cumulative amount includes the cumulative amount of electricity generated by the traveling wave output by the plasma generation unit.

4. The substrate processing apparatus according to claim 1, characterized in that, The cumulative amount includes the cumulative amount of electricity from the reflected waves output by the plasma generation unit.

5. The substrate processing apparatus according to claim 1, characterized in that, During the processing of the substrate, the calculation unit performs the calculation of the accumulated amount in real time or repeatedly at a predetermined period.

6. The substrate processing apparatus according to claim 1, characterized in that, If the accumulated amount after the expected processing time is smaller than the main accumulated amount, the control unit adjusts the processing time in the direction of increasing the processing time based on the correction time.

7. The substrate processing apparatus according to claim 1, characterized in that, If the accumulated amount after the expected processing time is greater than the main accumulated amount, the control unit adjusts the processing time in the direction of reducing the processing time based on the correction time.

8. The substrate processing apparatus according to claim 1, characterized in that, If it is expected that there is no difference between the accumulated amount after the processing time and the main accumulated amount, the control unit will not implement an adjustment of the processing time based on the correction time.

9. The substrate processing apparatus according to claim 6 or 7, characterized in that, The control unit continues or stops the processing of the substrate in accordance with the corrected processing time.

10. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes an input / output unit configured to display the waveform of the electrical power of the traveling wave output by the plasma generation unit and the waveform of the electrical power of the reflected wave output by the plasma generation unit.

11. The substrate processing apparatus according to claim 10, characterized in that, The input / output unit is configured to display the accumulated amount of power of the traveling wave and the accumulated amount of power of the reflected wave.

12. The substrate processing apparatus according to claim 10, characterized in that, The input / output unit is configured to display the processing status of the substrate, the cumulative amount (P) calculated during the processing of the substrate, and the main cumulative amount.

13. The substrate processing apparatus according to claim 1, characterized in that, The process includes: The preparation process defines the preparatory treatment, including plasma discharge and ignition. The main process defines the processing performed on the substrate; and Sub-process, which defines the additional processing performed on the substrate.

14. The substrate processing apparatus according to claim 13, characterized in that, The calculation unit is configured such that the cumulative amount is not calculated during the preparation process, but is calculated during the main process.

15. The substrate processing apparatus according to claim 13, characterized in that, The control unit is configured to anticipate that the accumulated amount during the main process is smaller than the main accumulated amount, so that the main process is completed according to the definition, and then the sub-process continues.

16. The substrate processing apparatus according to claim 13, characterized in that, The control unit is configured to terminate the execution of the main process at a time when the accumulated amount during the main process is expected to be greater than the main accumulated amount, and then not to execute the sub-process thereafter, when the remaining processing time of the main process is equal to the correction time.

17. The substrate processing apparatus according to claim 13, characterized in that, The control unit is configured such that when it is expected that there is no difference between the accumulated amount during the main process and the main accumulated amount, the main process is completed according to the definition, and the sub-process is not performed thereafter.

18. A method for manufacturing a semiconductor device, characterized in that, The manufacturing method includes the following steps: Plasma is generated within the space containing the substrate; The substrate is processed based on a process that defines processing conditions, including the processing time of the substrate. In the processing of the substrate, the cumulative amount of electricity used in generating the plasma is calculated; The accumulated amount at the processing end time when the processing result of the substrate is normal is used as the main accumulated amount; as well as The correction time relative to the processing time is determined based on the difference between the accumulated amount calculated during the processing of the substrate and the main accumulated amount.

19. The method for manufacturing a semiconductor device according to claim 18, characterized in that, The manufacturing method further includes the following step: adjusting the end timing of the substrate according to the calibration time.

20. A program, characterized in that, The computer causes the substrate processing apparatus to execute the following sequence: Plasma is generated within the space containing the substrate; The substrate is processed based on a process that defines processing conditions, including the processing time of the substrate. In the processing of the substrate, the cumulative amount of electricity used in generating the plasma is calculated; The accumulated amount at the processing end time when the processing result of the substrate is normal is used as the main accumulated amount; as well as The correction time relative to the processing time is determined based on the difference between the accumulated amount calculated during the processing of the substrate and the main accumulated amount.

21. The procedure according to claim 20, characterized in that, The procedure also includes the following sequence: adjusting the end timing of the substrate according to the calibration time.

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