Vertical graphite carrier plate and MOCVD (Metal Organic Chemical Vapor Deposition) equipment

Abstract

The invention discloses a vertical graphite carrier disc and MOCVD equipment, the vertical graphite carrier disc is applied to the MOCVD equipment, the vertical graphite carrier disc comprises a carrier disc body and a plurality of placing grooves formed in the carrier disc body, the placing grooves are used for containing substrates, the carrier disc body is vertically arranged in a reaction cavity of the MOCVD equipment, and the placing grooves are used for containing the substrates. When the output port outputs reaction gas, the reaction gas is unidirectionally transmitted from one part of the edge of the placing groove to the other part of the opposite edge of the placing groove, through the arrangement, the reaction gas reacts with the substrate, and the reaction gas can be uniformly distributed on the substrate at the same time. According to the device, particulate matters on the surface of the substrate can be purged, so that the particulate matters can be separated from the substrate, the yield of the substrate is improved, the structure is simple, and the reliability of the substrate during processing is guaranteed on the basis of not changing the original effect.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a vertical graphite carrier disk and MOCVD equipment. Background Technology

[0002] MOCVD equipment is widely used in many fields, including: LED manufacturing, where MOCVD is the most critical equipment in the LED chip production process, directly affecting the performance and quality of LEDs; laser diodes, used to manufacture high-performance laser devices; and power electronic devices, where MOCVD technology also plays an important role in high-power applications.

[0003] Currently, existing MOCVD equipment includes a graphite disk horizontally laid in the reaction chamber. The graphite disk has multiple placement slots, each of which can accommodate a substrate. When the substrate needs to be fully reacted, the reaction gas is introduced into the reaction chamber and acts directly on the front surface of the substrate from top to bottom in a direct blowing manner.

[0004] However, the existing horizontally arranged placement tanks cause particulate matter in the reaction chamber to act directly on the front surface of the substrate along with the gas flow, resulting in a large area of ​​particulate matter adhering to the front surface of the substrate, thereby reducing the substrate yield. Summary of the Invention

[0005] Based on this, the purpose of the present invention is to provide a vertical graphite carrier disk and MOCVD equipment to solve the technical problem in the prior art that the existing horizontally arranged placement tanks cause particulate matter in the reaction chamber to act directly on the surface of the substrate with the flow of gas, resulting in a large area of ​​particulate matter adhering to the positive surface of the substrate, thereby reducing the substrate yield.

[0006] A first aspect of the present invention is to provide a vertical graphite carrier disk, the vertical graphite carrier disk being used in an MOCVD equipment, the vertical graphite carrier disk including a carrier disk body and a plurality of placement slots disposed on the carrier disk body, the placement slots being used to accommodate a substrate; The carrier plate body is vertically arranged in the reaction chamber of the MOCVD equipment, such that a portion of the edge of the carrier plate body is positioned opposite to the output port of the reaction chamber. When the output port outputs reactive gas, the reactive gas is unidirectionally transported from one edge of the placement groove to another opposite edge. This unidirectional transport of the reactive gas during its reaction with the substrate separates surface particles from the substrate along with the flow of the reactive gas.

[0007] Furthermore, the plurality of placement slots include a first placement slot and a plurality of second placement slots; The first placement slot is located in the central region of the carrier plate body, and a plurality of second placement slots are arranged circumferentially with the first placement slot as the center.

[0008] A second aspect of the present invention is to provide an MOCVD apparatus, comprising an apparatus body having a reaction chamber and at least one vertical graphite carrier disk as described above, wherein the vertical graphite carrier disk is vertically disposed within the reaction chamber such that the output port of the reaction chamber is disposed opposite to a portion of the edge of the carrier disk plate.

[0009] Furthermore, the MOCVD equipment also includes a gas input pipe assembly and a gas output pipe assembly connected to the reaction chamber, as well as an inlet baffle assembly and an outlet baffle assembly disposed within the reaction chamber. The air intake baffle assembly is connected to the gas input pipe assembly to transmit the reaction gas output from the reaction gas input pipe to the air intake baffle assembly for mixing, and then output towards the vertical graphite carrier disk. The gas outlet baffle assembly is connected to the gas output pipe and is used to block the reaction gas in the reaction chamber and output it from the gas output pipe.

[0010] Furthermore, the MOCVD equipment also includes multiple output ports provided in the inlet baffle assembly and multiple input ports provided in the outlet baffle assembly; Each of the output ports is arranged opposite to each of the input ports, and a plurality of vertical graphite carriers are provided in the reaction chamber. Each of the two opposite edges of each vertical graphite carrier has at least one output port and at least one input port.

[0011] Furthermore, the intake baffle assembly includes a first intake baffle having multiple first output ports and a second intake baffle having multiple second output ports; The first air intake baffle and the second air intake baffle are spaced apart in the reaction chamber, so that a reaction zone for mixing the reaction gas is formed between the first air intake baffle and the inner wall of the reaction chamber, and between the first air intake baffle and the second air intake baffle.

[0012] Furthermore, the exhaust baffle assembly includes a first exhaust baffle having multiple first inlets and a second exhaust baffle having multiple second inlets; The first and second gas outlet baffles are spaced apart within the reaction chamber, forming a blocking region between the first gas outlet baffle and the inner wall of the reaction chamber, and between the first and second gas outlet baffles, to block the output of the reaction gas.

[0013] Furthermore, the gas input pipe assembly is positioned directly opposite the center of the first air intake baffle. The plurality of first output ports are spaced apart on the first air intake baffle, and the aperture of the plurality of first output ports gradually increases from the middle of the first air intake baffle towards the edge of the first air intake baffle. Multiple second output ports are spaced apart from the second air intake baffle plate, and the apertures of the multiple second output ports are all equal.

[0014] Furthermore, the gas output pipe is positioned directly opposite the center of the first gas outlet baffle. The plurality of first input ports are spaced apart on the first air outlet baffle plate, and the aperture of the plurality of first input ports gradually increases from the middle of the first air outlet baffle plate to the edge of the first air outlet baffle plate. Multiple second inlet ports are spaced apart from the second outlet baffle plate, and the orifice diameters of the multiple second inlet ports are all equal.

[0015] Furthermore, each of the vertical graphite carriers is provided with a heating element, which is used to heat the vertical graphite carrier.

[0016] Compared with existing technologies, the advantages of using the vertical graphite carrier and MOCVD equipment shown in this invention are as follows: In the vertical graphite carrier shown in the application, the vertical graphite carrier is applied in an MOCVD equipment, and the carrier body is vertically arranged in the reaction chamber of the MOCVD equipment, such that a part of the edge of the carrier plate is opposite to the output port of the reaction chamber. When the output port outputs the reactive gas, the reactive gas is unidirectionally transported from a part of the edge of the placement tank to the other opposite edge. When the reactive gas reacts with the substrate, the unidirectional transport of the reactive gas separates the surface particles of the substrate from the substrate along with the flow of the reactive gas. Through this arrangement, the transport path of the reactive gas is not changed in this application. By vertically arranging the carrier body in the reaction chamber, the reactive gas can perform a "purge" process from the surface of the substrate. This allows the reactive gas to purge the particles on the substrate surface while reacting with the substrate, so that the particles can be separated from the substrate, thereby improving the substrate yield. This achieves a simple structure and ensures the reliability of the substrate during processing without changing the original effect. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the overall structure of an MOCVD device in one embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a graphite carrier disk in one embodiment of the present invention; Figure 3 This is a front view of MOCVD in one embodiment of the present invention; Figure 4 This is a schematic diagram of the working process of an MOCVD device in one embodiment of the present invention. Detailed Implementation

[0018] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Several embodiments of the invention are illustrated in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0019] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0021] First Embodiment Please see Figures 1-4 As shown, the vertical graphite carrier 100 is used in MOCVD equipment. The vertical graphite carrier 100 includes a carrier body 110 and a plurality of placement slots provided on the carrier body 110. The placement slots are used to accommodate substrates. The carrier plate body 110 is vertically arranged in the reaction chamber 200 of the MOCVD equipment, such that a part of the edge of the carrier plate is positioned opposite to the output port of the reaction chamber 200. When the reactive gas is output from the outlet, the reactive gas is unidirectionally transported from one edge of the placement tank to the other opposite edge. This allows the reactive gas to react with the substrate, and through the unidirectional transport of the reactive gas, the surface particles of the substrate are separated from the substrate along with the flow of the reactive gas.

[0022] Specifically, it should be noted that in some practical situations, the specific structure of the MOCVD equipment is conventional prior art in this field. It includes a reaction chamber 200 disposed within the equipment body, and an output port is arranged in the reaction chamber 200 for outputting reaction gas, so that the reaction gas can react with the substrate in the reaction chamber 200 to realize the processing steps of the substrate. Other components constituting the MOCVD equipment are conventional prior art in this field, so they will not be specifically described here.

[0023] However, since the existing graphite carrier disk 100 is horizontally laid in the reaction chamber 200, the reaction gas output from the outlet directly acts on the surface of the substrate, which causes the particles in the reaction chamber 200 to be directly distributed on the surface of the substrate, thereby reducing the substrate yield. It should be noted that the surface of the substrate specifically refers to the upper surface of the substrate, that is, the area of ​​the upper surface of the substrate, such as the area of ​​a circular region. Particles will be scattered in this area, which greatly affects the substrate yield.

[0024] Therefore, in this embodiment, the vertical graphite carrier 100 includes a carrier body 110 and multiple placement slots disposed on the carrier body 110. Specifically, the carrier body 110 is vertically arranged in the reaction chamber 200 of the MOCVD equipment, such that a portion of the edge of the carrier plate is opposite to the output port of the reaction chamber 200. When the output port outputs reactive gas, the reactive gas is unidirectionally transported from a portion of the edge of the placement slot to the other opposite edge. This allows the reactive gas to react with the substrate, and through the unidirectional transport of the reactive gas, the surface particles of the substrate are separated from the substrate along the flow of the reactive gas. In other words, the transport path of the reactive gas is not changed in this application. By vertically arranging the carrier body 110 in the reaction chamber 200, the reactive gas can perform a "purge" process from the surface of the substrate. This allows the reactive gas to purge the particles on the surface of the substrate while reacting with the substrate, so that the particles can be separated from the substrate, thereby improving the substrate yield and achieving a simple structure that ensures the reliability of the substrate during processing without changing the original effect.

[0025] It should be noted that, in some preferred embodiments, the multiple placement slots include a first placement slot 120 and multiple second placement slots 130. The first placement slot 120 is located in the central region of the carrier body 110, and the multiple second placement slots 130 are circumferentially spaced around the first placement slot 120. By limiting the arrangement positions of the first placement slot 120 and the multiple second placement slots 130, multiple substrates can be placed on a carrier body 110, further improving the practicality of the present invention.

[0026] In summary, the vertical graphite carrier shown in this embodiment has at least the following advantages compared with the horizontally laid graphite carrier in the prior art: In the vertical graphite carrier 100 shown in the application, the vertical graphite carrier 100 is applied in an MOCVD equipment, and the carrier body 110 is vertically arranged in the reaction chamber 200 of the MOCVD equipment, such that a part of the edge of the carrier plate is opposite to the output port of the reaction chamber 200. When the output port outputs the reaction gas, the reaction gas is unidirectionally transported from a part of the edge of the placement tank to the other opposite edge. When the reaction gas reacts with the substrate, the unidirectional transport of the reaction gas separates the surface particles of the substrate from the substrate along with the flow of the reaction gas. Through this arrangement, the transport path of the reaction gas is not changed in this application. With the carrier body 110 vertically arranged in the reaction chamber 200, the reaction gas can be "purged" from the surface of the substrate. While reacting with the substrate, the reaction gas can purge the particles on the surface of the substrate, so that the particles can be separated from the substrate, thereby improving the substrate yield. The structure is simple, and the reliability of the substrate during processing is guaranteed without changing the original effect.

[0027] Second Embodiment Please refer to it again. Figures 1-4 As shown, another aspect of the present invention also provides an MOCVD apparatus, including an apparatus body having a reaction chamber 200 and at least one vertical graphite carrier disk 100 of the first embodiment described above, wherein the vertical graphite carrier disk 100 is vertically disposed within the reaction chamber 200 such that the output port of the reaction chamber 200 is disposed opposite to a portion of the edge of the carrier disk plate.

[0028] It should be noted that the specific structure of the MOCVD equipment is conventional prior art in this field. It includes a reaction chamber 200 disposed within the equipment body, and an output port is arranged in the reaction chamber 200 for outputting reaction gas, so that the reaction gas can react with the substrate in the reaction chamber 200 to realize the processing steps of the substrate. Other components constituting the MOCVD equipment are conventional prior art in this field, and therefore will not be specifically described here.

[0029] To facilitate the transfer of reaction gas to the reaction chamber 200, in this embodiment, the MOCVD equipment also includes a gas input pipe assembly 300 and a gas output pipe 400 connected to the reaction chamber 200, as well as an inlet baffle assembly 500 and an outlet baffle assembly 600 disposed in the reaction chamber 200. The intake baffle assembly 500 is connected to the gas input pipe assembly 300 so that the reaction gas output from the reaction gas input pipe is transferred to the intake baffle assembly 500 for mixing and then output towards the vertical graphite carrier disk 100. The gas outlet baffle assembly 600 is connected to the gas outlet pipe 400 and is used to block the reaction gas in the reaction chamber 200 and output it from the gas outlet pipe 400.

[0030] It should be noted that when the reactant gas reacts with the substrate, the reactant gas is usually a composite reactant gas with multiple components. In this embodiment, the gas input pipe group 300 is specifically composed of a main pipe and multiple sub-pipes. The main pipe is directly connected to the reaction chamber 200, and the multiple sub-pipes are specifically used to transport gases of different components. Specifically, each sub-pipe is used to transport a gas of one component. The gases of multiple components composed of multiple sub-pipes are collected at the main pipe and input into the reaction chamber 200 through the main pipe.

[0031] However, due to uneven mixing of the various gas components during transport, an inlet baffle assembly 500 and an outlet baffle assembly 600 are arranged within the reaction chamber 200. The inlet baffle assembly 500 is connected to the gas input pipe assembly 300 to transport the reaction gas output from the reaction gas input pipe to the inlet baffle assembly 500 for mixing before being output towards the vertical graphite carrier disk 100. The outlet baffle assembly 600 is connected to the gas output pipe 400 to block the reaction gas in the reaction chamber 200 before it is output from the gas output pipe 400. In other words, the inlet baffle assembly 500 obstructs the transport of the various gas components to achieve thorough mixing, and the outlet baffle assembly 600 obstructs the output of the various gas components to ensure that the various gas components can fully react with the substrate.

[0032] Specifically, the intake baffle assembly 500 includes a first intake baffle 520 having a plurality of first outlets 510 and a second intake baffle 540 having a plurality of second outlets 530. The first air intake baffle 520 and the second air intake baffle 540 are spaced apart within the reaction chamber 200, so that reaction zones for mixing reaction gases are formed between the relative inner walls of the first air intake baffle 520 and the reaction chamber 200, and between the first air intake baffle 520 and the second air intake baffle 540. It should be noted that in this embodiment, the gas input pipe assembly 300 is positioned directly opposite the center of the first air intake baffle 520. A plurality of first output ports 510 are spaced apart on the first air intake baffle 520, and the aperture of the plurality of first output ports 510 gradually increases from the center of the first air intake baffle 520 towards the edge of the first air intake baffle 520. A plurality of second output ports 530 are spaced apart on the second air intake baffle 540, and the aperture of the plurality of second output ports 530 is equal.

[0033] By limiting the apertures of multiple first output ports 510, the reaction gas input from the gas input pipe assembly 300 will directly correspond to the middle of the first intake baffle plate 520. Since the aperture of the first output port 510 in the middle is the smallest, the reaction gas will diffuse from the middle of the first intake baffle plate 520 to the surrounding area. Combined with the first output ports 510 with corresponding apertures in the diffusion path, the normal transmission of the reaction gas is ensured. That is, the disadvantage of the first intake baffle plate 520 expanding due to excessive gas pressure is avoided. At the same time, the full mixing of the gas can also be ensured.

[0034] Additionally, the exhaust baffle assembly 600 includes a first exhaust baffle 620 having multiple first inlets 610 and a second exhaust baffle 640 having multiple second inlets 630. The first exhaust baffle 620 and the second exhaust baffle 640 are spaced apart within the reaction chamber 200, such that barriers for blocking the flow of reaction gases are formed between the first exhaust baffle 620 and the inner wall of the reaction chamber 200, and between the first exhaust baffle 620 and the second exhaust baffle 640. Regarding the obstruction area, it should be noted that in this embodiment, the gas output pipe 400 is positioned directly opposite the center of the first gas outlet baffle 620. Multiple first input ports 610 are spaced apart on the first gas outlet baffle 620, and the aperture of the multiple first input ports 610 gradually increases from the center of the first gas outlet baffle 620 towards its edge. Multiple second input ports 630 are spaced apart on the second gas outlet baffle 640, and the aperture of the multiple second input ports 630 is equal.

[0035] In other words, the outlet baffle assembly 600 can impede the output of the reactive gas, further reducing the rate of reactive gas output, so as to ensure complete reaction on the substrate.

[0036] In some preferred embodiments, the MOCVD apparatus further includes a plurality of output ports disposed in the inlet baffle assembly 500 and a plurality of input ports disposed in the outlet baffle assembly 600, wherein each output port is disposed opposite to each input port, and a plurality of vertical graphite carrier disks 100 are disposed in the reaction chamber 200, wherein each vertical graphite carrier disk 100 has at least one output port and at least one input port corresponding to two opposite edges. By arranging a plurality of vertical graphite carrier disks 100, the processing efficiency of the substrate can be improved.

[0037] In addition, a heating element 700 can be provided in each vertical graphite carrier 100. The heating element 700 is used to heat the vertical graphite carrier 100. A single heating element 700 can heat a single vertical graphite carrier 100 with a single property, ensuring the uniformity of heating of each substrate.

[0038] In summary, the MOCVD equipment shown in this embodiment has at least the following advantages compared with existing MOCVD equipment: In the MOCVD equipment shown in the application, a vertical graphite carrier disk 100 is vertically arranged in the MOCVD equipment, such that a part of the edge of the carrier disk is opposite to the output port of the reaction chamber 200. When the output port outputs the reactive gas, the reactive gas is unidirectionally transported from a part of the edge of the placement tank to the other opposite edge. When the reactive gas reacts with the substrate, the unidirectional transport of the reactive gas separates the surface particles of the substrate from the substrate along with the flow of the reactive gas. Through this arrangement, the transport path of the reactive gas is not changed in this application. With the carrier disk body 110 vertically arranged in the reaction chamber 200, the reactive gas can perform a "purge" process from the surface of the substrate. This allows the reactive gas to purge the particles on the surface of the substrate while reacting with the substrate, so that the particles can be separated from the substrate, thereby improving the substrate yield. This achieves a simple structure and ensures the reliability of the substrate during processing without changing the original effect.

[0039] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0040] The above embodiments merely illustrate several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this patent should be determined by the appended claims.

Claims

1. A vertical graphite carrier disk, characterized in that, The vertical graphite carrier disk is used in MOCVD equipment. The vertical graphite carrier disk includes a carrier disk body and a plurality of placement slots provided on the carrier disk body. The placement slots are used to accommodate a substrate. The carrier plate body is vertically arranged in the reaction chamber of the MOCVD equipment, such that a portion of the edge of the carrier plate body is positioned opposite to the output port of the reaction chamber. When the output port outputs reactive gas, the reactive gas is unidirectionally transported from one edge of the placement groove to another opposite edge. This unidirectional transport of the reactive gas during its reaction with the substrate separates surface particles from the substrate along with the flow of the reactive gas.

2. The vertical graphite carrier disk according to claim 1, characterized in that, The plurality of placement slots include a first placement slot and a plurality of second placement slots; The first placement slot is located in the central region of the carrier plate body, and a plurality of second placement slots are arranged circumferentially with the first placement slot as the center.

3. An MOCVD device, characterized in that, The MOCVD equipment includes an equipment body having a reaction chamber and at least one vertical graphite carrier disk as described in any one of claims 1-2, wherein the vertical graphite carrier disk is vertically disposed in the reaction chamber such that the output port of the reaction chamber is disposed opposite to a portion of the edge of the carrier disk plate.

4. The MOCVD equipment according to claim 3, characterized in that, The MOCVD equipment also includes a gas input pipe assembly and a gas output pipe assembly connected to the reaction chamber, as well as an inlet baffle assembly and an outlet baffle assembly disposed within the reaction chamber. The air intake baffle assembly is connected to the gas input pipe assembly to transmit the reaction gas output from the reaction gas input pipe to the air intake baffle assembly for mixing, and then output towards the vertical graphite carrier disk. The gas outlet baffle assembly is connected to the gas output pipe and is used to block the reaction gas in the reaction chamber and output it from the gas output pipe.

5. The MOCVD equipment according to claim 4, characterized in that, The MOCVD equipment also includes multiple output ports provided in the inlet baffle assembly and multiple input ports provided in the outlet baffle assembly; Each of the output ports is arranged opposite to each of the input ports, and a plurality of vertical graphite carriers are provided in the reaction chamber. Each of the two opposite edges of each vertical graphite carrier has at least one output port and at least one input port.

6. The MOCVD equipment according to claim 5, characterized in that, The air intake baffle assembly includes a first air intake baffle with multiple first output ports and a second air intake baffle with multiple second output ports; The first air intake baffle and the second air intake baffle are spaced apart in the reaction chamber, so that a reaction zone for mixing the reaction gas is formed between the first air intake baffle and the inner wall of the reaction chamber, and between the first air intake baffle and the second air intake baffle.

7. The MOCVD equipment according to claim 6, characterized in that, The air outlet baffle assembly includes a first air outlet baffle with multiple first inlets and a second air outlet baffle with multiple second inlets; The first and second gas outlet baffles are spaced apart within the reaction chamber, forming a blocking region between the first gas outlet baffle and the inner wall of the reaction chamber, and between the first and second gas outlet baffles, to block the output of the reaction gas.

8. The MOCVD apparatus according to claim 7, characterized in that, The gas input pipe assembly is positioned directly opposite the center of the first air intake baffle. The plurality of first output ports are spaced apart on the first air intake baffle, and the aperture of the plurality of first output ports gradually increases from the middle of the first air intake baffle towards the edge of the first air intake baffle. Multiple second output ports are spaced apart from the second air intake baffle plate, and the apertures of the multiple second output ports are all equal.

9. The MOCVD equipment according to claim 8, characterized in that, The gas output pipe is positioned directly opposite the center of the first gas outlet baffle. The plurality of first input ports are spaced apart on the first air outlet baffle plate, and the aperture of the plurality of first input ports gradually increases from the middle of the first air outlet baffle plate to the edge of the first air outlet baffle plate. Multiple second inlet ports are spaced apart from the second outlet baffle plate, and the orifice diameters of the multiple second inlet ports are all equal.

10. The MOCVD equipment according to claim 3, characterized in that, Each of the vertical graphite carriers is provided with a heating element, which is used to heat the vertical graphite carrier.

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